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Solutions _ Assignment – 1
2. (b)10-6 m to 10-3 m,
4. (e) silicon.
7. (a) With positive resist, the exposed regions are dissolved during develop.
(d) With negative resist, the exposed regions are hardened during develop.
8. (d) The spin speed of the wafer after deposition of resist and the viscosity of the resist
9. (b) Decrease exponentially
Resist thickness is given by t = kp2/w½, where
k is spinner constant, typically 80-100.
p is resist solids content in percent.
w is spinner rotational speed in rpm/1000.
11. (b) the ratio of horizontal rate to the vertical etch rate
3 t
R g
2 2
14. a) Anisotropic