SAINT LOUIS UNIVERSITY

School of Engineering and Architecture

Department of Mechanical Engineering

ME 2251L- #04

INTRODUCTION TO SEMICONDUCTOR DIODES

Submitted by: Submitted to:

BLAH, KHALID S. Engr. Florence Leslie Campolet

SEA-ECE Faculty

Date of Submission: February 10, 2021

IV. DATA AND RESULTS

1. a. CR1: 1N4001

For 1N4001 Diode, the maximum current carrying capacity is 1A it withstand peaks up to 30A. Hence, we
can use this in circuits that are designed for less than 1A. The reverse current is 5uA, which is negligible. It
can withstand reverse voltage peak up to 50V. The cathode terminal can be identified by using a grey bar.

CR2: 1N4002

For 1N4002 Diode, the maximum current carrying capacity is 1A it withstand peaks up to 30A. Hence, we
can use this in circuits that are designed for less than 1A. The reverse current is 5uA, which is negligible. It
can withstand reverse voltage peak up to 100V. The cathode terminal can be identified by using a grey
bar.
 CR3: 1N4001G

The 1N4001G is an axial-leaded standard Recovery Rectifier with an epoxy molded case, all external
surfaces corrosion-resistant and terminal lead is readily solderable finish. The diffused junction rectifier is
suitable for general purpose and low power applications.

CR4: 1N4002G

The 1N4002G is an axial-leaded standard Recovery Rectifier with an epoxy-molded case, all external
surfaces corrosion-resistant and terminal lead is readily solder able finish. The diffused junction rectifier is
suitable for general purpose and lowpower applications.

1. d. Record the polarity of the ohmmeter leads and the voltage indicated by the voltmeter.

Common lead = Negative

Ohm’s lead = Positive

Voltage measurement = 9.12 Vdc

2. Provide MultiSim screenshots of CR1 to CR4, summarize results for b. and c.

2. b. Measure the forward resistance of each silicon diode.

CR1 forward resistance = 92.45 kΩ x (1000 Ω/1 kΩ) = 92450 Ω

CR2 forward resistance = 92.45 kΩ x (1000 Ω/1 kΩ) = 92450 Ω

CR3 forward resistance = 2.831 MΩ x 1000000 = 2831000 Ω

CR4 forward resistance = 2.831 MΩ x 1000000 = 2831000 Ω

CR1 forward resistance = 92450 Ω

CR2 forward resistance = 92450 Ω

CR3 forward resistance = 2831000 Ω

CR4 forward resistance = 2831000 Ω

c. Reverse the doped connections so the anode is connected to common lead, and the cathode to the
Ohm’s lead. The diode is now in a reverse bias condition. Use the highest resistance range of the ohmmeter
to measure the reverse resistance of each silicon diode.

CR1 reverse resistance = 92.45 kΩ x (1000 Ω/1 kΩ) = 92450 Ω

CR2 reverse resistance = 92.45 kΩ x (1000 Ω/1 kΩ) = 92450 Ω

CR3 reverse resistance = 2.831 MΩ x 1000000 = 2831000 Ω

CR4 reverse resistance = 2.831 MΩ x 1000000 = 2831000 Ω

CR1 reverse resistance = 92450 Ω

CR2 reverse resistance = 92450 Ω

CR3 reverse resistance = 2831000 Ω

CR4 reverse resistance = 2831000 Ω

 3. Provide MultiSIm screenshots for If and Ef. Arrange and label.

3. b. Gradually increase the source voltage Es until the ammeter indicates 0.1mAdc of the forward diode
current I f for each of the I f listed on Table 1.

Table 1

If Ef If Ef

1 0.10 mA 0.12454 V 8 0.80 mA 0.22765 V

2 0.20 mA 0.15783 V 9 0.90 mA 0.23367 V

3 0.30 mA 0.17795 V 10 1.0 mA 0.23909 V

4 0.40 mA 0.19247 V 11 2.0 mA 0.27479 V

5 0.50 mA 0.20372 V 12 3.0 mA 0.29562 V

6 0.60 mA 0.21296 V 13 4.0 mA 0.31039 V

7 0.70 mA 0.22083 V 14 5.0 mA 0.322 V

3. d. Adjust the source voltage to 40 Vdc and measure the diode reverse (leakage) current I R.

I R indicated = _______________uAdc
Multism Screenshots for If and Ef

1.

2.

3.
4.

5.

6.
7.

8.

9.
10.

11.

12.
13.

14.
4. Plot the graph and interpret the data.

4. a.

4. b. Examine the plotted curve and note that the diode forward voltage drop E, increases with
forward current flow I, until a point is reached where E, remains relatively constant while
continues to increase. At this point, the diode is said to be completely forward biased. At
approximately what voltage is the diode completely forward biased?

Ef = _________.22675________ Vdc
V. OBSERVATIONS

The diode is a device formed from a junction of n-type and p-type semiconductor material. The
lead connected to the p-type material is called the anode and the lead connected to the n-type
material is the cathode. In general, the cathode of a diode is marked by a solid line on the diode.
The primary function of the diode is rectification. When it is forward biased the higher potential is
connected to the anode lead, it will pass current. When it is reversed biased (the higher potential
is connected to the cathode lead, current flow is blocked.

VI. DISCUSSION OF THEORY

Semiconductor Diode

A p n junction is known as a Semiconductor Diode. The p n junction is used for the purpose of
rectification as it conducts only in one direction. It is also known as crystal diode as it is made of a
crystal-like Silicon or Germanium. The symbol of the semiconductor diode is shown below.

It has two terminals. It conducts only when it is forward biased. This means when the terminal
connected with the arrowhead is at a higher potential than the terminal connected to the bar as
shown in the above figure. When the semiconductor diode is reversed biased, practically it does
not conduct any current through it.

Volt-Ampere Characteristics of a Semiconductor Diode

The volt-ampere or V- I characteristics of a semiconductor diode is a curve between the voltage

across the junction and the circuit current.
The circuit arrangement is shown below.

The resistor R is connected in series with the PN junction which limits the diode forward current from
exceeding the prescribed limit value. The characteristics are studied under three heads i.e. zero
external voltage, forward biasing, and reverse biasing. They are described below in detail.

Zero External Voltage

When no external voltage is applied that is the circuit is open at key K, no current flows through
the circuit. It is indicated by point 0 on the graph shown below:
Forward Biasing

When key K is closed and the double throw switch is thrown to position 1 as shown in the above
circuit diagram A. The PN junction is forward biased as a p-type semiconductor is connected to
the positive terminal and n-type to the negative terminal of the supply. Now, when the supply
voltage is increased by changing the variable resistor Rh. The circuit current increases very slowly
and the curve is non-linear shown in the above characteristic figure B as OA.

The slow rise in the current in this region is because the externally applied voltage is used to
overcome the potential barrier of 0.3 V for Ge and 0.7 for Si of the PN junction. However, once the
potential barrier is eliminated and the external supply voltage is increased further. The PN junction
behaves like an ordinary conductor and the circuit current rises very sharply represented by the
region AB. At this instant, the current is limited by the series resistance R and a small value of the
junction forward resistance Rf. The curve is almost linear. If the current rises more than the rated
value of the diode, the diode may be damaged.

Knee Voltage

The forward voltage (0.3 V for Ge and 0.7 V for Si diodes) at which the current through the diode
or p n junction starts rising abruptly is known as Knee Voltage.

Reverse Biasing

When the double pole double throw (DPDT) switch is thrown to position 2 as shown in figure A. The
p n junction is reverse biased as a p-type semiconductor is connected to the negative terminal
and n-type to the positive terminal of the supply. Under this condition, the potential barrier at the
junction is increased. Therefore, the junction resistance Rr becomes very high and practically no
current flows through the circuit.

However, in actual practice a very small current of the order of microampere flow in the circuit.
This current is known as Reverse Current and is due to minority carriers available at room
temperature. The reverse current increases slightly with the increase in reverse bias supply voltage.
If the reverse voltage is increased continuously, a stage reaches when the kinetic energy of
electrons (minority carriers) becomes so high that they knock out electrons from the
semiconductor bonds. At point C, the breakdown of the junction occurs and the resistance of the
barrier region Rr falls suddenly. Consequently, the reverse current rises tremendously to a large
value. This may destroy the junction permanently. The reverse voltage at which the p n junction
breaks is known as Breakdown Voltage.
VII. CONCLUSIONS

From the analysis of both forward bias and reverse bias, we can arrive at one fact that a pn
junction diode conducts current only in one direction example is during forward bias. During
forward bias, the diode conducts current with increase in voltage. During reverse bias, the diode
does not conduct with increase in voltage break down usually results in damage of diode.

VIII. References

ADMIN. (2020). 1N4002 Diode Pinout, Equivalent, Datasheet, Specs and Other Details.
Components Info. Retrieve from: https://www.componentsinfo.com/1n4002-diode-
pinout-equivalent-datasheet/

electronicproject. (2014). Diode 1N4001G Polarity and Pinout. Electro Project BD. Retrieve from
https://electroprojectbd.com/diode-1n4001g-polarity-and-pinout/

Jojo. (2013). PN Junction Diode Characteristics – Explained in Detail with Graphs. Basic Electronics.
Retrieve from: https://www.circuitstoday.com/pn-junction-diode-characteristics#:~

Mukherjee, D. (2008). Observation of the characteristic of a diode. 1-5. Retrieve from

https://www.cmi.ac.in/~debangshu/lab1/diode.pdf

Tomes. (2017). Semiconductor Diode. Circiut Globee. Retrieve from

https://circuitglobe.com/semiconductor-diode.html