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Description
The 40 Amp bi-directional solid state switch series is
designed for AC switching and phase control applications
such as motor speed, temperature modulation controls,
lighting controls, and static switching relays.
Alternistor type components only operate in quadrants I, II,
& III and are used in circuits requiring high dv/dt capability.
Standard type devices operate in quadrants I,II,III & IV.
Symbol Value Unit Excellent for AC switching and phase control applications
such as heating, lighting, and motor speed controls.
IT(RMS) 40 A
Typical applications are AC solid-state switches, industrial
VDRM / VRRM 400 to 1000 V
power tools, exercise equipment, white goods and
IGT (Q1) 35 to 100 mA commercial appliances.
Alternistor Triacs (no snubber required) are used in
applications with extremely inductive loads requiring
Schematic Symbol highest commutation performance.
MT1
Qxx40x7
IT(RMS) RMS on-state current (full sine wave) TC = 75 °C 40 A
Qxx40xH6
di/dt Critical rate-of-rise of on-state current f = 120 Hz; TJ =125 °C 150 A/μs
IGTM Peak gate current tp=20μs TJ = 125 °C 4 A
PG(AV) Average gate power dissipation TJ = 125°C 0.5 W
Tstg Storage temperature range -40 to 150 °C
TJ Operating junction temperature range -40 to 125 °C
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Alternistor Triac (3 Quadrants)
Value
Symbol Test Conditions Quadrant Unit
Qxx40xH6 Qxx40K5 Qxx40x7
IGT VD = 12V RL = 60 Ω I – II – III MAX. 80 50 100 mA
VGT VD = 12V RL = 60 Ω I – II – III MAX. 1.3 1.3 2.0 V
VGD VD = VDRM RL = 3.3 kΩ TJ = 125°C I – II – III MIN. 0.2 V
IH IT = 400mA MAX. 80 75 100 mA
400V 600 500 700
600V 500 475 625
dv/dt VD = VDRM Gate Open TJ = 125°C MIN. V/μs
800V 475 400 575
1000V 1000 800 1200
(dv/dt)c (di/dt)c = 21.6 A/ms TJ = 125°C MIN. 30 20 50 V/µs
tgt IG = 2 x IGT PW = 15µs IT = 56.6A(pk) TYP. 5 µs
Electrical Characteristics (TJ = 25°C, unless otherwise specified) — Standard Triac (4 Quadrants)
Value
Symbol Test Conditions Quadrant Qxx40x3 Unit
Qxx40x4
I – II – III MAX. 35 50
IGT VD = 12 V; RL = 60 Ω mA
IV MAX. 70 100
VGT VD = 12 V; RL = 60 Ω ALL MAX. 1.3 1.3 V
VGD VD = VDRM; RL = 3.3 kΩ ; TJ = 125 °C ALL MIN. 0.2 0.2 V
IH IT = 400mA (initial) MAX. 80 80 mA
400V 400 400
dv/dt VD = VDRM; Gate Open; TJ = 125 °C 600V MIN. 400 400 V/μs
800V 400 400
(dv/dt)c (di/dt)c = 4.3 A/ms; TJ = 125 °C MIN. 10 10 V/μs
tgt IG = 2 x IGT; PW = 15µs; IT = 35.4 A TYP. 5 5 μs
dv/dt VD=VDRM,Gate Open, TJ=100˚C 1000V - - 300 V/µs
Static Characteristics
Thermal Resistances
Qxx40KH6
Qxx40K5/7
0.97
Qxx40K4/J4
RƟ(J-C) Junction to case (AC) Qxx40K3 °C/W
Qxx40JH6
0.95
Qxx40J7
Note: xx = voltage
Figure 2: N
ormalized DC Gate Trigger Current for
Figure 1: Definition of Quadrants
All Quadrants vs. Junction Temperature
MT1 MT1
2.0
REF REF
I GT - QII QI
QIII QIV
+ IGT
MT2 MT2
1.0
(-) I GT (+) I GT
GATE GATE
0.0
MT1 MT1 110 +125
-
-40 -15 10 35 60 85
4.0 2.0
Ratio of VGT / VGT (TJ = 25°C)
1.5
Ratio of IIH / IIH (TJ = 25°C)
3.0
1.0
2.0
0.5
1.0
0.0
0.0 -40- 15 10 35 60 85 110 +125
+ 125
-40 -15 10 35 60 85 110 Junction Temperature - °C
Junction Temperature - °C
45 130
Average On-State Power Dissipation
40 120
30
[PD (AV)] - Watts
100
(TC) - ºC
25
90
20
80
15
70
10
5 60
0 50
0 4 8 12 16 20 24 28 32 36 40 0 5 10 15 20 25 30 35 40 45 50
RMS On-State Current [IT(RMS)] - AMPS RMS On-State Current [IT(RMS)] - AMPS
90
80
Positive or Negative Instantaneous
TC = 25ºC
On-State Current (iT) - AMPS
70
60
50
40
30
20
10
0
0.6 0.8 1.0 1.2 1.4 1.6
Positive or Negative Instantaneous On-State Voltage (vT) - Volts
Load: Resistive
RMS On-State [IT(RMS)]: Max Rated Value at
Specific Case Temperature
Notes:
100
1) G
ate control may be lost during and
(ITSM ) – Amps
1
1 10 100 1000
Soldering Parameters
Temperature
TL
- Time (min to max) (ts) 60 – 180 secs tL
TS(max)
Average ramp up rate (Liquidus Temp) (TL) to
5°C/second max Ramp-do
Ramp-down
peak Preheat
Design Considerations
C Inches Millimeters
B D Dimension
U DIA. Min Max Min Max
A 0.810 0.835 20.57 21.21
Tc
B 0.610 0.630 15.49 16.00
Measurement
Point C 0.178 0.188 4.52 4.78
A
F D 0.055 0.070 1.40 1.78
E Z
E 0.487 0.497 12.37 12.62
F 0.635 0.655 16.13 16.64
MT1 G 0.022 0.029 0.56 0.74
W X
H 0.075 0.095 1.91 2.41
J
Gate J 0.575 0.625 14.61 15.88
N
R K 0.256 0.264 6.50 6.71
T S L 0.220 0.228 5.58 5.79
P G
M
Y MT2
H M 0.080 0.088 2.03 2.24
K L N 0.169 0.177 4.29 4.49
V Note: Maximum torque to
be applied to mounting tab P 0.034 0.042 0.86 1.07
is 8 in-lbs. (0.904 Nm).
R 0.113 0.121 2.87 3.07
S 0.086 0.096 2.18 2.44
T 0.156 0.166 3.96 4.22
U 0.161 0.165 4.10 4.20
V 0.603 0.618 15.31 15.70
W 0.000 0.005 0.00 0.13
X 0.003 0.012 0.07 0.30
Y 0.028 0.032 0.71 0.81
Z 0.085 0.095 2.17 2.42
Inches Millimeters
TC Measurement Point
Dimension
C Min Max Min Max
B
U (diameter) D
A 0.810 0.835 20.57 21.21
B 0.610 0.630 15.49 16.00
A C 0.178 0.188 4.52 4.78
F
E D 0.055 0.070 1.40 1.78
W
E 0.487 0.497 12.37 12.62
Gate F 0.635 0.655 16.13 16.64
J
P G 0.022 0.029 0.56 0.74
MT1 H 0.075 0.095 1.91 2.41
MT2 M H
Q
J 0.575 0.625 14.61 15.88
G
R K 0.211 0.219 5.36 5.56
N
L 0.422 0.437 10.72 11.10
Note: Maximum torque M 0.058 0.068 1.47 1.73
K
to be applied to mounting
tab is 8 in-lbs. (0.904 Nm). N 0.045 0.055 1.14 1.40
L
P 0.095 0.115 2.41 2.92
Q 0.008 0.016 0.20 0.41
R 0.008 0.016 0.20 0.41
U 0.161 0.165 4.10 4.20
W 0.085 0.095 2.17 2.42
Product Selector
Packing Options
Q 60 40 K 7
TO-218 AC - (K Package)
DEVICE TYPE SENSITIVITY & TYPE TO-218 X - (J Package)
Q : Triac or Alternistor Standard Triac:
3: 35mA (QI,QII,QIII)
70mA(QIV)
VOLTAGE 4: 50mA(QI,QII,QIII)
40 : 400V 100mA(QIV) Q6040K7
60 : 600V Alternistor Triac:
80 : 800V H6: 80mA (QI, QII, QIII)
7 : 100mA (QI, II, III)
K0 : 1000V 5: 50mA (QI, QII, QIII) ®
YMLXX
PACKAGE TYPE
K : TO-218AC Isolated
CURRENT J : TO-218X Isolated
40 : 40A
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designed for, and may not be used in, all applications. Read complete Disclaimer Notice at http://www.littelfuse.com/disclaimer-electronics.
© 2020 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: GD. 12/17/20
Mouser Electronics
Authorized Distributor
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