P-N Junction

1.what is P-N junction?

P-N junction is a semiconductor device in which a P type
semiconductor is joined with N type semiconductor
3 What is depletion layer?
It is a thin region around the junction which is free from holes and
electrons
4 What is ideal junction diode?
Ideal junction diode is that which conduct only in forward bias
5 why it is so that current is flowing so easily in forward bias
where as not so easily in reverse bias?
In forward bias depletion region is thin so resistance is low hence
current flow due to majority carriers. where as in reverse bias
depletion region is thick so resistance is so high hence no current
flow due to majority carriers. current only flow due to minority
carrier
6 Is P-N junction an ohmic device?
No it is non ohmic devices; current is not vary linearly with
potential.
7 Which elements are used as intrinsic semiconductor?
Si and Ge are used as semiconductor. It is because it has four
electrons in its valance shell and form covalent bond
8 Carbon also has four electrons in valance shell then why it is
not used as semiconductor?
. In case of germanium and silicon they have d orbits in the outer
shell and they have greater mobility.
9 Name the various types of P-N junction diodes .
photo diode, light emitting diode, tunnel diode, Zener diode,
varactor diode etc
10:What is value of the potential barrier of a silicon and
germanium?

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0.7 V for Si and 0.3 V for Ge.
11.What is charge on P type or N type semiconductor?
it is neutral.
12 What is donor impurity?
The pentavalent impurity atoms like Sb, As
13. What is acceptor impurity?
The trivalent impurity like B, Al
14. What is doping?
Addition of impurity to pure semiconductor to increase its
conductivity.
15.How does conductivity of semiconductor varies with
temperature?
The conductivity of the semiconductor increases with temperature.
16 Diode is a two-terminal electronic component that conducts
electric current in only one direction.

17 Symbol of PN junction diode

(i) Forward Bias:

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• When the positive terminal of a battery is connected to P-
type semiconductor and negative terminal to N-type is
known as forward bias of PN junction.

• The applied forward potential establishes an electric field

opposite to the potential barrier. Therefore the potential
barrier is reduced at the junction. As the potential barrier
is very small (0.3V for Ge and 0.7V for Si),a small forward
voltage is sufficient to completely eliminate the barrier
potential, thus the junction resistance becomes zero.

• When the applied potential is more than the internal

barrier potential then the depletion region completely
disappear, thus the junction resistance becomes zero.

• Once the potential barrier is eliminated by a forward

voltage, junction establishes the low resistance path for
the entire circuit, thus a current flows in the circuit, it is
called as forward current.

(ii)Reverse Bias:

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 Ø For reverse bias, the negative terminal is connected to P-type
semiconductor and positive terminal to N type
semiconductor.

Ø When reverse bias voltage is applied to the junction, all the

majority carriers of ‘P’ region are attracted towards the
negative terminal of the battery and the majority carriers of
the N region attracted towards the positive terminal of the
battery, hence the depletion region increases.

Ø The applied reverse voltage establishes an electric field which

acts in the same direction of the potential barrier. Therefore,
the resultant field at the junction is strengthened and the
barrier width is increased. This increased potential barrier
prevents the flow of charge carriers across the junction,
results in a high resistance path.

Ø This process cannot continue indefinitely because after

certain extent the junction break down occurs. As a result a
small amount of current flows through it due to minority
carriers. This current is known as “reverse saturation
current”.
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V-I characteristics of PN junction diode

Forward characterisrics:

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• As the forward voltage increased for V < Vo, the forward
current is almost zero because the potential barrier prevents
the holes from P region and electrons from N region to flow
across the depletion region .
• For V > Vo, the potential barrier at the junction completely
disappears and hence, the holes cross the junction from P to
N type and electrons cross the junction to opposite direction,
resulting large current flow in external circuit.
• Cut in voltage or threshold voltage is that forward bias
voltage below which the current is very small.
At this voltage the potential barrier is overcome and the
current increase s rapidly.
• Cut in voltage is 0.3V for germanium and 0.7 for silicon.

Reverse characteristics
• Theoretically no current flow in the external circuit. But in
practice a very small amount of current of the order of few
microamperes flows under reverse bias.
• the minority carriers electrons in the P region and holes in
the N region, wander over to the junction and flow towards
their majority carrier side giving rise a small reverse current.
This current is known as reverse saturation curre