APM4435K ANPEC a) P-Channel Enhancement Mode MOSFET Features Description + -30vI-8A Rogoy 1Omattyp.) @ Vac=-10V Rosiom=24mQttyp.) @ Vag=-4.5V + Super High Dense Cell Design + Reliable and Rugged + Lead Free Available (RoHS Compliant) S32 Applications (we + Power Management in Notebook Computer, 1 Portable Equipment and Battory Powered Systems 8385 6528 P-Channel MOSFET Ordering and Marking Information apm4435 OO Package Code kK: S0P-8 Lead Free Code Operating Junction Temp. Range fandling Code © :-55 to 150 C Temp. Range Handling Code Package Code TR: Tape & Real Lead Free Code L: Lead Free Device Blank : Original Device 5 APNAA5 API4435 K Beas: 20000% - Date Code Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-tree soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPCIJEDEC J STD-020C for MSL classificar tion at lead-free peak reflow temperature, ANPEC reserves the right to make changes to Improve rellablty or manufacturabllty without netice, and advise customers to obtaln the latest version of relevant information to venty before placing orders, Copyright » ANPEC Electronics Corp, 1 wiewanpec.com.bw Rev. B.2 - Jun., 2006APM4435K ANPEC, Absolute Maximum Rai GS (7, = 25°C unless otherwise noted) Symbol Parameter Rating Unit Voss __ [Drain-Source Voltage -30 v Vess__|Gate-Source Voltage 225 lot [Continuous Drain Current 8 A lout [Pulsed Drain Current -30 Ig" [Diode Continuous Forward Current 3 A T,__ [Maximum Junction Temperature 150 “c Tsrs__|Storage Temperature Range 55 to 150 Pot |Maximum Power Dissipation —— - w [r.= 100°C. 08 Rix’ [Thermal Resistance-Junction to Ambient 625 “cw Note: *Surface Mounted on tin’ pad area, t < 10soc Electrical Characteristics (1, = 25°C unless otherwise noted) symbol Parameter Test Condition Armee Unit Min. | Typ. | Max. [Static Characteristics BVoss_[Drain-Source Breakdown Voltage [Vas=0V, Ios=-250-A 30 Vv LZero Gate Voltage Drain Current |Y2*-24¥- Vase +) on T.=25°C| “30 [Gate Threshold Voltage Vas bog 250:A a [as[ 2 [Vv [Gate Leakage Current 25V, Vos=0V. 100 [na [Vase 10V, os=-8A 16 | 20 Drain-Source On-state Resistance, = eta] Diode Forward Voltage lso=-3A, Vos=0V_ oa [13] Vv [Dynamic Characteristics ° Re_ [Gate Resistance Ves=0V, Vos=0V,F=1MHz 10 a Cx _ [input Capacitance 3200 Coss [Output Capacitance 560 oF Caz _ [Reverse Transfer Capacitance 250 tucw _|Tum-on Delay Time 16 | 30 [Turn-on Rise Time we], [Turn-off Delay Time 75_| 136 [Turn-off Fall Time a | a7 Copyright ¥ ANPEC Electronics Corp. Rev. B.2 - Jur, 2006 vwiwwranpec.com. twAPM4435K ANPEC, Electrical Characte' S (Cont.) (7, = 25°C unless otherwise noted) symbol Parameter Test Condition APMAASSK | Unit min. | Typ. | Max. IGate Charge Characteristics” Q, [Total Gate Charge 48 [60 Qss_[Gato-Source Charge 10 ne Qui [Gate-Drain Charge 9 Notes: a : Pulse test; pulse width<3007s, duty eycla<2%. : Guaranteed by design, not subject to production testing. Copyright ¥ ANPEC Electronics Corp. Rev. B.2 - Jur, 2006 vwiwwranpec.com. twAPM4435K Typical Characteristics Power Dissipation Power (W) ‘0 20 40 6 80 100 120 +40 100 T)- Junction Temperature (°C) Safe Operation Area “100 Vos - Drain - Source Voltage (V) -lo= Drain Current (A) s & ized Transient Nor anpEC Q) Drain Current 02 40 a0 80 100 120 140 too T= Junction Temperature (°C) ‘Thermal Transient Impedance 7 20 ‘Square Wave Pulse Duration (sec) Copyright ¥ ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 iver anpec.com.twAPM4435K Typical Characteristics (Cont.) Output Characteristics Vgge-4, 6, 6.-7,-8,-9, 10, oo 2 4 6 68 © -Vos- Drain - Source Voltage (V) Transfer Characteristics < 3 6 Ves - Gate - Source Voltage (V) Rosow)- On - Resistance (ma) Normalized Threshold Voltage Drain-Source On Resistance 15 202590 -lo- Drain Current (A) Gate Threshold Voltage = 25008 50 250 25 50 78 100 125 150 T- Junction Temperature (°C) Copyright ¥ ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 iver anpec.com.twAPM4435K anpEC Q) Typical Characteristics (Cont.) Drain-Source On Resistance wo es B10 8 125 é E10 Bors 5 Sos os Ti- Junction Temperature (°C) Capacitance 5000 Frequency=1MHz ‘sto gaa | § veo 5 2500 3 coco 8 ss00 é cas ow -Ves - Drain - Source Voltage (V) = Source Current (A) = § $ 3 g 2 ‘Source-Drain Diode Forward 30 10 on bo 03. 06 08 42. 45 0 - Source - Drain Voltage (V) Gate Charge 05 10 18 20 25 90 35 40 45 50 (Qo- Gate Charge (nC) Copyright ¥ ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 iver anpec.com.twAPM4435K Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) 0.015X45° cof C i et e2 D 5 qf AL A gt CHP {3 ]0.004max. Lu 0 meters inches im Min. Max. Min. Max. A 1.35 1.75 0.053 0.069 At 0.10 0.25 0.004 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 a 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 ef 0.33 0.54 0.013 0.020 e2 7a78SC 0.50856 ot & a Copyright ¥ ANPEC Electronics Corp. 7 vwiwwranpec.com. tw Rev. B.2 - Jur, 2006APM4435K anpec QX) Physical Specifications [Terminal Material [Solder-Plated Copper (Solder Material - 90/10 or 63/37 SnPb), 100%Sn lLoad Solderability _|Meets EIA Specification RSI86-91, ANSV/J-STD-002 Category 3. Reflow Cond ON (IR/Convection or VPR Reflow) . a Gritical Zone ToT, 1, 2 = & é 2 as > Preheat / 8 le 125°C Peak Time Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly asegeyemeur rate 3°Cisecond max. 3°Cisecond max. Preheat 7 7 *Ferpeate in enn) tooo sero = Temperature Max (Tsmax) 60-120 second 60-180 second = Time (min to max) (Is) 120 seconds 180 seconds [Time maintained above: 7 _ Temperature (7) 60180 seconds 60-180 seconds -Time (t) [Peak/Classificatioon Temperature (Tp) ‘Soe table 1 See table 2 [Zime within °C of actual 10-30 seconds 20-40 seconds Peak Temperature (to) IRamp-down Rate @-Cisecond max 6:Cisecond max. [Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package Measured on the body surface. Copyright ¥ ANPEC Electronics Corp. 8 wwar.anpec.com.tw Rev. B.2 - Jun., 2006APM4435K ANPEC, Classification Reflow Profiles(Cont.) Table 1._SnPb Entectic Process - Package Peak Reflow Temperatures Package Thickness Volume mm Volume mn <350 2350 <2.5 mm 240 +0/-5°C 225 +0/-5°C 22.5 mm 225 +0/ 225 +0/-5°C Table 2. Pb-free Process ~ Package Classification Reflow Temperatures Package Thickness Volume mm’ Volume mm’ Volume mn <350 >2000 rail f 3-0-0 5 4, 4 Ao \o1 —-y ko Copyright ¥ ANPEC Electronics Corp. Rev. B.2 - Jun., 2006 iver anpec.com.twAPM4435K Carrier Tape & Reel Dimensions(Cont.) ‘Application [_A z c Z TT TZ Ww F E Bot | 215) WIS | 20H |W4+02) a202 | 12+03| Ge0a |i Teroa 015 204 sop. F D Di Po] Fi Bo) % i B5z01 | 1.5520.1 |1S5+O28) 40407 | 20201 5204 | 21-01 [Os0013 (mm) Cover Tape Dimensions ‘Application Carrier Width ‘Cover Tape Width Devices Per Reel | ‘SOP-8 2 93. 2500 J Customer Service Anpec Electronics Corp. Head Office No.6, Dusing 1st Road, SBIP, Hsin.Chu, Taiwan, RO.C. Tel: 886-3-5642000 Fax: 886-3-5642050 Taipei Branch TF, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R.O.C. Tel: 886-2-80191368 Fax: 886-2-89191369 Copyright ¥ ANPEC Electronics Corp. 10 Rev. B.2 - Jur, 2006 vwiwwranpec.com. tw