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BSO220N03MD Rev1.1
BSO220N03MD Rev1.1
Thermal characteristics
Thermal resistance,
R thJS - - 50 K/W
junction - soldering point
minimal footprint,
- - 150
steady state
Static characteristics
V DS=30 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 10 µA
T j=25 °C
V DS=30 V, V GS=0 V,
- 10 100
T j=125 °C
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air. One transistor active.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Rev.1.1 page 2 2009-11-19
BSO220N03MD G
Dynamic characteristics
Q sw V GS=0 to 4.5 V
Switching charge - 1.7 -
V DD=15 V, I D=7.7 A,
Gate charge total Qg - 7.8 10 nC
V GS=0 to 10 V
V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 3.3 4.4
V GS=0 to 4.5 V
Reverse Diode
V GS=0 V, I F=7.7 A,
Diode forward voltage V SD - 0.88 1.1 V
T j=25 °C
V R=15 V, I F=I S,
Reverse recovery charge Q rr - - 10 nC
di F/dt =400 A/µs
4)
See figure 16 for gate charge parameter definition
2.5 8
2
6
1.5 4.5 V
P tot [W]
I D [A]
4 10 V
2
0.5
0 0
0 40 80 120 160 0 40 80 120 160
T A [°C] T A [°C]
102 102
limited by on-state 1 µs
resistance
0.5
10 µs
100 µs 0.2
101
0.1
1 ms 101
0.05
Z thJA [K/W]
0.02
I D [A]
100 10 ms
0.01
10-2 10-1
-1 0 1 2
10 10 10 10 10-6 10-5 10-4 10-3 10-2 10-1 100 101 102
V DS [V] t p [s]
60 60
10 V 5V
4.5 V
50 50
2.8 V
3V
3.2 V
40 40
3.5 V
R DS(on) [mΩ]
4V
I D [A]
30 30
4V
4.5 V
5V
20 20
3.5 V
10 V
3.2 V
10 10
3V
2.8 V
0 0
0 1 2 3 0 5 10 15 20 25 30
V DS [V] I D [A]
60 35
30
50
25
40
20
g fs [S]
I D [A]
30
15
20
10
10
5
150 °C
25 °C
0 0
0 1 2 3 4 5 0 5 10 15 20 25 30
V GS [V] I D [A]
40 2.5
35
2
30
25 98 %
R DS(on) [mΩ]
1.5
V GS(th) [V]
20
typ
1
15
10
0.5
0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [°C] T j [°C]
103 102
Ciss
Coss
25 °C
150 °C, 98%
102 101
150 °C
C [pF]
I F [A]
25 °C, 98%
Crss
1
10 100
100 10-1
0 10 20 30 0 0.5 1 1.5 2
V DS [V] V SD [V]
10 12
15 V
10
6V 24 V
25 °C
100 °C
125 °C
V GS [V]
I AV [A]
1 6
0.1 0
1 10 100 1000 0 2 4 6 8 10
t AV [µs] Q gate [nC]
34
V GS
32 Qg
30
V BR(DSS) [V]
28
26
V g s(th)
24
22 Q g(th) Q sw Q g ate
Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [°C]
Package Outline
PG-DSO-8: Outline
Footprint
Dimensions in mm
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
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