Chapter 2-1 Semiconductor Devices: DJM20042 Electronic Systems

DJM20042
ELECTRONIC SYSTEMS
CHAPTER 2-1
SEMICONDUCTOR DEVICES
(DIODE, TRANSISTOR,SCR, DIAC & TRIAC)
JKM/PUO/PCTAN2021
Student Learning Outcomes
Upon completion this unit, you should be able to:
 Explain basic principle of

1) Diodes
P-N Junction Diode
Real vs. Ideal
Types of Diodes, symbol & Applications
I-V characteristic curve for diode
regular diode and zener diode
2) Transistors BJT
3) Silicon-Controlled Rectifier (SCR)
4) DIAC
5) TRIAC
6) Field Effect Transistor (FET)
7) Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
8) Uni-junction transistor (UJT)
 Differences between BJT and FET
JKM/PUO/PCTAN2021 2
What is a Diode?
• A diode is a two terminal electronic component which conducts
current more easily in one direction than in the opposite direction.
• The most common usage of a diode is an electronic valve which

allows current to flow in one direction but not the opposite
direction.
JKM/PUO/PCTAN2021 3
How to test a diode ?
JKM/PUO/PCTAN2021 4
A bit of history
• In 1873 Fredrick Guthrie discovered thermionic diodes
(vacuum tube diodes) . Heating the cathode in forward
bias permitted electrons to be transmitted into the
vacuum, but in reverse bias the electrons were not easily
release from the unheated anode.
• In 1874 Karl Braun discovered the first solid state diode

(crystal diode). It consists of using Galena crystals as the
semiconducting material
• Diodes were known as rectifiers until 1919, when a

physicist by the name of William Eccles coined the term
diode, which from its Greek roots means “through-path.”
• In 1939 Russell Ohl discovered the first P-N junction at

Bell Labs.
• Today, the majority of diodes are made of P-N junctions

semiconductor silicon.
JKM/PUO/PCTAN2021 5
P-N Junction Diode
• A P-N junction diode consists of a P-type semiconductor (silicon)
joined with an N-type semiconductor.
• P-type – A semiconductor doped with impurities to create positive
charge carriers (holes).
• N-type – A semiconductor doped with impurities to create negative
charged carriers.
• A depletion region is created when negative charge carriers from
the N-type region diffuse into the P-type region, and vice versa.
JKM/PUO/PCTAN2021 6
P-N Junction Diode
• The behavior of a diode depends upon the polarity of the supply
voltage.
• Under forward bias the depletion region is reduced in size and less
energy is required for the charged majority carriers to cross the
depletion region.
• This decrease in energy requirement results in more charged

majority carriers to cross the depletion region which induces a
current.
JKM/PUO/PCTAN2021 7
P-N Junction Diode
• Under reverse bias the depletion region is greatly increased in size
and requires significantly more energy from the majority carriers in
order to cross.
• Most majority carriers won’t be able to cross the depletion region and
thus are unable to induce a current.
JKM/PUO/PCTAN2021 8
Real vs. Ideal model
I
• Ideal diode
– no resistance to current in forward bias and conduction
infinite resistance in reverse bias. (Similar region
to a switch) V
non-conduction
• Real diode region
- In reality there is resistance to current flow in Ideal Curve
forward bias. It requires a certain voltage to
be reached before the depletion region is
eliminated and full current flow is permitted.
- Likewise, in reverse bias there is a small
reverse (leakage) current induced by the
flow of minority carriers. At a certain
voltage (break down voltage) the reverse
current will increase significantly. This is
called the Avalanche current.
JKM/PUO/PCTAN2021 9
The current-versus-voltage characteristics
of a typical P-N junction diode
JKM/PUO/PCTAN2021 10
Light Emitting Diodes (LEDs)
• Light emitting diode(LED) is a solid state device that that emits light
when a current flows from anode to cathode across the PN junction
of the PN junction of the device.
• basically a specialized type of PN junction diode that emits either
visible light, infrared or laser light at different wavelengths, made
from a thin layer of heavily doped semiconductor material.
• The Light Emitting Diodes I-V Characteristics of LED is non-linear
as shown in Figure below, so the LED turns on at a lower voltage
and will rapidly draw much higher current as the voltage increases.
Light Emitting Diode colours
WAVELENGTH COLOUR VF @ 20MA MATERIAL

RANGE (NM)
< 400 Ultraviolet 3.1 - 4.4 Aluminium nitride (AlN)
Aluminium gallium nitride (AlGaN)
Aluminium gallium indium nitride (AlGaInN)
400 - 450 Violet 2.8 - 4.0 Indium gallium nitride (InGaN)

450 - 500 Blue 2.5 - 3.7 Indium gallium nitride (InGaN)
Silicon carbide (SiC)
500 - 570 Green 1.9 - 4.0 Gallium phosphide (GaP)
Aluminium gallium indium phosphide (AlGaInP)
Aluminium gallium phosphide (AlGaP)
570 - 590 Yellow 2.1 - 2.2 Gallium arsenide phosphide (GaAsP)

Gallium phosphide (GaP)
590 - 610 Orange / amber 2.0 - 2.1 Gallium arsenide phosphide (GaAsP)
Aluminium gallium indium phosphide (AlGaUInP)
610 - 760 Red 1.6 - 2.0 Aluminium gallium arsenide (AlGaAs)

Gallium arsenide phosphide (GaAsP)
> 760 Infrared < 1.9 Gallium arsenide (GaAs)

Aluminium gallium arsenide (AlGaAs)
• Advantages of LEDs
 Energy efficient source of light for small areas and short
distances
 Small in size
 Durable and resistance to shock and vibration
 Very fast on-time
 Good color resolution
 Can integrate into a control system
 Can be powered from a portable battery
• Disadvantages of LEDs
 May be unreliable for outdoor applications with great
temperature variations
 Employ large heat sinks to protect semiconductors from heat
damage
Flyback Diode
• Schottky diodes are often used as Flyback diodes
due to their quick recovery and low forward
voltage drop.
• A Flyback diode is a diode used to eliminate the

sudden voltage spike that occurs across an
indicutive load when voltage is abruptly reduced
or removed.
• Lenz’s law - if the current through an inductance

changes, this inductance induces a voltage so
the current will go on flowing as long as there is
energy in the magnetic field.
• Flyback diodes are important in mechatronics

applications where one may want to vary the
voltage of an inductive load to control its
operation.
Schottky Diode
• Unlike P-N junction diodes, Schottky diodes are based on a
metal and semiconductor junction.
• An advantage of Schottky diodes over P-N junction diodes

is that Schottky diodes have no recovery time when
switching from conducting to non-conducting state and vice
versa.
• The main disadvantage of Schottky diodes are that they

operate in low voltage compare to P-N junction diodes (up
to 50V).
N-
• Another significant difference is that the “on-voltage” for a Metal
Type
Schottky diode is around .3V while it is .7V for a P-N
junction diode.
Comparison between regular diode and zener diode
Parameters Diode Zener Diode
Zener diode is semiconductor device which

Diode is a semiconductor device which can conduct in forward as well as reversed
Definition
conducts only in forward biased. biased. If the voltage exceeds the breakdown
voltage known as ‘zener voltage’.
Operation in Reverse
Diode It gets damaged in reverse biased. It can operate without getting damaged.
Biased
Diode Zener Diode

Circuit Symbol
Diode In normal diodes doping intensity is Zener diode doping intensity is high to achieve
Doping Intensity
low. sharp breakdown.
1) voltage rectifiers – convert AC to DC.,
2) clippers and clampers – to protect the

circuits by putting limitations on the
voltage. Zener diode is mostly used in voltage
Application
regulator.
3) Voltage multipliers- Non-linear mixing of
two voltages
Other Types of Diodes
• Photodiode – Exploits the fact that all
semiconductors are subject to charged carrier
generation when they are exposed to light.
Photodiodes are often used to sense light
such as in an Opto-isolator.
• Zener Diode – Allows current in forward bias
like a regular diode, but also in reverse bias if
the voltage is larger than designed voltage,
called the Breakdown voltage.
• Varactor diode - one kind of semiconductor
microwave solid-state device and the
applications of this diode mainly involve in
where variable capacitance is preferred which
can be accomplished by controlling voltage
Other Types of Diodes
OTHER TYPES OF DIODES
What is a Transistor ?
• Bipolar Junction Transistors
• NPN Transistor Most Common Configuration
• Base, Collector, and Emitter

o Base is a very thin region with less
dopants
o Base collector junction reversed biased
o Base emitter junction forward biased
Fluid flow analogy:

o If fluid flows into the base, a much
larger fluid can flow from the collector to
the emitter
o If a signal to be amplified is applied as a
current to the base, a valve between the
collector and emitter opens and closes
in response to signal fluctuations
• PNP Transistor essentially the same except
for directionality
What is a transistor ?
• A transistor is a 3 terminal electronic device made of

semiconductor material.
• Transistors have many uses, including amplification,
switching, voltage regulation, and the modulation of
signals
• Types of transistors
o Bipolar Junction Transistors
o Field Effect Transistors
o Power Transistors
BJT Transistors
• BJT (Bipolar Junction Transistor)
 NPN - Base is energized to allow current flow
 PNP - Base is connected to a lower potential to allow
current flow
• 3 parameters of interest
 Current gain (β)
 Voltage drop from base to emitter when VBE=VFB
 Minimum voltage drop across the collector and emitter
when transistor is saturated
NPN BJT Transistors
• High potential at collector
• Low potential at emitter
• Allows current flow when
the base is given a high
potential
PNP BJT Transistors
• High potential at emitter

• Low potential at collector
• Allows current flow when
base is connected to a low
potential
BJT Modes
• Cut-off Region: VBE < VFB, iB=0
o Transistor acts like an off
switch
• Active Region: VBE=VFB, iB≠0,

iC=βiB
o Transistor acts like a current
amplifier
• Saturation Region: VBE=VFB,

iB>iC,max/ β
o In this mode the transistor acts
like an on switch
• Power across BJT

What are Thyristors?
 Class of semiconductor components that can only go in

1 direction.
 Wide range of devices, SCR (silicon controlled rectifier),
SCS (silicon controlled switch), Diacs, Triacs, and
Shockley diodes
 Used in high power switching applications
i.e. hundreds of amps / thousands of watts
How do Thyristors work?
 PNPN (4-layer) device:
 PNP and NPN transistor back-to-back.
 With forward voltage, small gate current pulse turns on device.

 once on, each transistor supplies gate current for the other, so no
need for gate input
 only way to turn it off is to stop current (i.e. bring voltage to zero)
Silicon-Controlled Rectifier (SCR)
The SCR is the most important special semiconductor device. This

device is popular for its Forward-Conducting and Reverse-blocking
characteristics.
The silicon-controlled rectifier or semiconductor controlled rectifier

is a two-state device used for efficient power control.
SCR can be used in high-power devices. For example, in the central

processing unit of the computer, the SCR is used in switch mode power
supply (SMPS).
Constructional Features
The SCR is a four-layer structure, either p–n–p–n or n–p–n–p, that

effectively blocks current through two terminals until it is turned ON by a
small-signal at a third terminal.
The SCR has two states: a high-current low-impedance ON state and

a low-current high-impedance OFF state.
The basic transistor action in a four-layer p–n–p–n structure is analysed

first with only two terminals,and then the third control input is introduced.
Physical Operation and Characteristics:
• The physical operation of the SCR can be explained clearly with
reference to the current–voltage characteristics.
• The forward-bias condition and reverse-bias condition illustrate the
conducting state and the reverse blocking state respectively.
Based on these two states a typical I –V characteristic of the SCR
is shown in Fig. 8-2.
SCR in Forward Bias:
• There are two different states in which we can examine the SCR in
the forward-biased condition:
(i) The high- impedance or forward-blocking state
(ii) The low-impedance or forward-conducting state
At a critical peak forward voltage Vp, the SCR switches from the
blocking state to the conducting state, as shown in Fig. 8-2.
• A positive voltage places junction j1 and j3 under forward-bias, and
the centre junction j2 under reverse-bias.
• The for ward voltage in the blocking state appears across the reverse-
biased junc tion j2 as the applied voltage V is increased. The voltage
from the anode A to cathode C, as shown in Fig. 8-1, is very small
after switching to the forward-conducting state, and all three junctions
are forward-biased. The junction j2 switches from reverse-bias to
forward-bias..
SCR in Reverse Bias:
I–V Characteristics of the SCR:
• Forward-Blocking State:
• When the device is biased in the forward-blocking state, as shown in Fig. 8-
4(a), the applied voltage appears primarily across the reverse-biased
junction j2. Al though the junctions j1 and j3 are forward-biased, the current
is small.
• Forward-Conducting State of the SCR:
As the value of (α1 + α2 ) approaches unity through one of the mechanisms
,many holes injected at j1 survive to be swept across j2 into p2.
 This process helps feed the recombination in p2 and support the injection
of holes into n2. In a similar manner, the transistor action of electrons
injected at j3 and collected at j2 supplies electrons for n1.
 The current through the device can be much larger.
Reverse-Blocking State of the SCR:
• The SCR in reverse-biased condition allows almost negligible current to flow
through it. This is shown in Fig. 8-4(c).
• In the reverse-blocking state of the SCR, a small saturation current flows
from anode to cathode. Holes will flow from the gate into p2, the base of the
n–p–n transistor, due to positive gate current.
• The required gate current for turn-on is only a few milli-amperes, therefore,
the SCR can be turned on by a very small amount of power in the gate.
• As shown in Fig. 8-5, if the gate

current is 0 mA, the critical voltage
is higher, i.e., the SCR requires
more voltage to switch to the
conducting state.
• But as the value of gate current
increases, the critical voltage
becomes lower, and the SCR
switches to the conducting state at
a lower voltage.
• At the higher gate current IG2, the
SCR switches faster than at the
lower gate current IG1,
because IG2 > IG1.
Simple Applications:
• The SCR is the most important member of the thyristor family. The SCR is
a capable power device as it can handle thousands of amperes and
volts.
• Generally the SCR is used in many applications such as in high power
electronics, switches, power-control and conversion mode.
• It is also used as surge protector.
• Static Switch: The SCR is used as a switch for power-switching in various
control circuits.
• Power Control: Since the SCR can be turned on externally, it can be
used to regulate the amount of power delivered to a load.
• Surge Protection: In an SCR circuit, when the voltage rises beyond the
threshold value, the SCR is turned on to dissipate the charge or voltage
quickly.
• Power Conversion: The SCR is also used for high-power conversion and
regulation. This includes conversion of power source from ac to ac, ac
to dc and dc to ac.
Semiconductor-controlled switch (SCS):
• Few SCRs have two gate leads, G2

attached to p2 and G1
attached to n1, as shown in Fig. 8-6. This
configuration is called the semiconductor-
controlled switch (SCS).
• The SCS, biased in the forward-blocking

state, can be switched to the conducting
state by a negative pulse at the anode
gate n1 or by a positive current pulse
applied to the cathode gate at p2.
DIODE AC SWITCH (DIAC):
• The DIAC is a combination of two diodes. Diodes being
unidirectional devices, conduct current only in one direction.
• If bidirectional (ac) operation is desired, two Shockley diodes may
be joined in parallel facing different directions to form the DIAC.
• The DIAC, a combination of two Shockley Diodes.
Constructional Features:
• The construction of DIAC looks like a transistor but there are
major differences.
• They are as follows:
(i) All the three layers, p–n–p or n–p–n, are equally doped in the
DIAC, whereas in the BJT there is a gradation of doping. The
emitter is highly doped, the collector is lightly doped, and the
base is moderately doped.
• (ii) The DIAC is a two-terminal diode as opposed to the BJT,
which is a three-terminal device.
Physical Operation and Characteristics:
• The main characteristics are of the DIAC are as follows:
(i) Break over voltage
(ii) Voltage symmetry
(iii) Break-back voltage
(iv) Break over current
(v) Lower power dissipation
• Although most DIACs have symmetric switching voltages,

asymmetric DIACs are also available. Typical DIACs have a power
dissipations ranging from 1/2 to 1 watt.
I-V characteristics of the DIAC:
what are TRIACS?
 A TRIAC (TRIode for Alternating Current) is a 3-
terminal AC semiconductor switch.
• The term TRIAC is derived by combining the first
three letters of the word “TRIODE” and the word
“AC”.
• a bidirectional thyristor with three terminals. It is
widely used for the control of power in ac circuits.
 Composed of 2 thyristors facing opposite
directions such that it can conduct current in
either direction.
 MT1 and MT2 are current carrying terminals while
the Gate terminal is used for triggering by
applying a small voltage signal.
 Once triggered, it continues to conduct current
until the current falls below a threshold value.
Triac Operation
•5 layer device
•Region between MT1 and MT2 are parallel switches (PNPN and NPNP)
•Allows for positive or negative gate triggering
Triac Characteristic Curve
Triac Characteristic Curve
o 1st quadrant - MT2 is (+) with respect to MT1
o VDRM is the break-over voltage of the Triac and the
highest voltage that can be blocked
o IRDM is the leakage current of the Triac when VDRM is
applied to MT1 and MT2
o IRDM is several orders of magnitude smaller than the
“on” rating
TRIODE AC SWITCH (TRIAC):
Triacs
 Pros:
 Better than a transistor as it has much better current surge
rating – it can handle more current as it simply turns on
more
 Inexpensive compared to relays
 Cons:
 Can't manually control turn-off with the gate; must turn off
by stopping current through the device via the terminals.
 Specs to buy one:
 Gate signal requirements
 Voltage drop
 Steady-state/holding current (continuously handle)
 Peak current (maximum amount to handle surge)
Triac Applications
High Power TRIACS
• Switching for AC circuits, allowing the control of very large power
flows with milliampere-scale control currents
• Can eliminate mechanical wear in a relay
Low Power TRIACS

• Light bulb dimmers (done by applying power later in the AC cycle aka
PWM of AC wave)
• Motor speed controls for electric fans and other AC motors, and
heaters
• Modern computerized control circuits in household appliances
Triac Applications
Some of the popular applications of

the TRIAC are as follows:
(i) In speed control of single-

phase ac series or universal motors.
(ii) In food mixers and portable
drills.
(iii) In lamp dimming and heating
control.
(iv) In zero-voltage switched ac
relay.
Real World Triacs
• Come in various
shapes and sizes
• Essentially all the
same operationally
• Different mounting
schemes
Advantages of the TRIAC:
• The TRIAC has the following advantages:
(i) They can be triggered with positive- or negative-polarity voltage.

(ii) They need a single heat sink of slightly larger size.
(iii) They need a single fuse for protection, which simplifies their
construction.
(iv) In some dc applications, the SCR has to be connected with a
parallel diode for protection against reverse voltage, whereas a
TRIAC may work without a diode, as safe breakdown in either
direction is possible.
Disadvantages of the TRIAC:
• The TRIAC has the following disadvantages:
(i) TRIACs have low dv/dt ratings compared to SCRs.
(ii) Since TRIACs can be triggered in either direction, the trigger circuits
with TRIACs needs careful consideration.
(iii) Reliability of TRIACs is less than that of SCRs.

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DJM20042

(DIODE, TRANSISTOR,SCR, DIAC & TRIAC)

 Explain basic principle of

 Differences between BJT and FET

• The most common usage of a diode is an electronic valve which

• In 1874 Karl Braun discovered the first solid state diode

• Diodes were known as rectifiers until 1919, when a

• In 1939 Russell Ohl discovered the first P-N junction at

• Today, the majority of diodes are made of P-N junctions

• This decrease in energy requirement results in more charged

WAVELENGTH COLOUR VF @ 20MA MATERIAL

400 - 450 Violet 2.8 - 4.0 Indium gallium nitride (InGaN)

570 - 590 Yellow 2.1 - 2.2 Gallium arsenide phosphide (GaAsP)

610 - 760 Red 1.6 - 2.0 Aluminium gallium arsenide (AlGaAs)

> 760 Infrared < 1.9 Gallium arsenide (GaAs)

• A Flyback diode is a diode used to eliminate the

• Lenz’s law - if the current through an inductance

• Flyback diodes are important in mechatronics

• An advantage of Schottky diodes over P-N junction diodes

• The main disadvantage of Schottky diodes are that they

Parameters Diode Zener Diode

Zener diode is semiconductor device which

Diode Zener Diode

1) voltage rectifiers – convert AC to DC.,

2) clippers and clampers – to protect the

• Base, Collector, and Emitter

Fluid flow analogy:

• A transistor is a 3 terminal electronic device made of

• High potential at emitter

• Active Region: VBE=VFB, iB≠0,

• Saturation Region: VBE=VFB,

• Power across BJT

 Class of semiconductor components that can only go in

 With forward voltage, small gate current pulse turns on device.

The SCR is the most important special semiconductor device. This

The silicon-controlled rectifier or semiconductor controlled rectifier

SCR can be used in high-power devices. For example, in the central

The SCR is a four-layer structure, either p–n–p–n or n–p–n–p, that

The SCR has two states: a high-current low-impedance ON state and

The basic transistor action in a four-layer p–n–p–n structure is analysed

• As shown in Fig. 8-5, if the gate

• Few SCRs have two gate leads, G2

• The SCS, biased in the forward-blocking

• Although most DIACs have symmetric switching voltages,

Low Power TRIACS

Some of the popular applications of

(i) In speed control of single-

• The TRIAC has the following advantages:

(i) They can be triggered with positive- or negative-polarity voltage.

• The TRIAC has the following disadvantages:

(i) TRIACs have low dv/dt ratings compared to SCRs.

(iii) Reliability of TRIACs is less than that of SCRs.

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