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Ordering number : ENA0188 2SB817C / 2SD1047C

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PNP Epitaxial Planar Silicon Transistor

2SB817C / 2SD1047C NPN Triple Diffused Planar Silicon Transistor

140V / 12A, AF 80W Output Applications

Features
• Large current capacitance.
• Wide ASO and high durability against breakdown.
• Adoption of MBIT process.

Specifications ( ) : 2SB817C
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)160 V
Collector-to-Emitter Voltage VCEO (--)140 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC (--)12 A
Collector Current (Pulse) ICP (--)20 A
2.5 W
Collector Dissipation PC
Tc=25°C 120 W
Junction Temperature Tj 150 °C
DataSheet4U.com °C ee
DataSh
Storage Temperature Tstg --55 to +150

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)160V, IE=0A (--)0.1 mA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 mA
hFE1 VCE=(--)5V, IC=(--)1A 100 200
DC Current Gain
hFE2 VCE=(--)5V, IC=(--)5A 35
Gain-Bandwidth Product fT VCE=(--)5V, IC=(--)1A (10)15 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (280)140 pF
Base-to-Emitterr Voltage VBE VCE=(--)5V, IC=(--)5A 1.5 V
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)5A, IB=(--)0.5A (--0.3)0.2 (--)2.0 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)5mA, IE=0A (--)160 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)50mA, RBE=∞ (--)140 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)5mA, IC=0A (--)6 V
Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

DataSheet4U.com SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

13106DA MS IM TB-00001810 No. A0188-1/4

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2SB817C / 2SD1047C
Continued from preceding page.
Ratings
Parameter Symbol Conditions Unit
min typ max
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Turn-On Time ton See specified Test Circuit. (0.45)0.56 µs
Storage Time tstg See specified Test Circuit. (1.75)3.3 µs
Fall Time tf See specified Test Circuit. (0.25)0.4 µs

Package Dimensions Switching Time Test Circuit

unit : mm
7503-003
IB1
PW=20µs
15.6 4.8 OUTPUT
D.C.≤1% IB2
14.0 3.2 2.0
3.5
2.6

INPUT VR RB
RL=
10Ω
20.0
1.2

50Ω + +
15.0
1.3

100µF 470µF

1.6 VBE= --2V VCC=50V

2.0
20.0

1.0 0.6
IC=10IB1= --10IB2=5A
For PNP, the polarity is reversed.
1 2 3
0.6
1 : Base
2 : Collector
1.4

3 : Emitter

5.45 5.45 SANYO : TO-3PB

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et4U.co DataSheet4U.com ee
IC -- VCE IC -- VCE DataSh
--16 20
2SB817C 2SD1047C
18 500mA
--14
400mA
--500mA 16
Collector Current, IC -- A

Collector Current, IC -- A

--12
--400mA 300mA
14
--10 --300mA 12 200mA

--8 --200mA 10

8 100mA
--6 --100mA
6
--4
--40mA 4
40mA
--2 --20mA 20mA
2
IB=0mA IB=0mA
0 0
0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 0 1 2 3 4 5 6 7 8 9 10
Collector-to-Emitter Voltage, VCE -- V IT03410 Collector-to-Emitter Voltage, VCE -- V IT03411
IC -- VBE IC -- VBE
--8 8
2SB817C 2SD1047C
--7 VCE= --5V 7 VCE=5V
Collector Current, IC -- A

Collector Current, IC -- A

--6 6

--5 5
25° C

20°C

--4 4
0°
C
12

°C

25°C
1
=

--40°C
Ta=
Ta

--40

--3 3

--2 2

--1 1

0 0
0 --0.5 --1.0 --1.5 0 0.2 0.4 0.6 0.8 1.0 1.2
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Base-to-Emitter Voltage, VBE -- V IT03412 Base-to-Emitter Voltage, VBE -- V IT03413

No. A0188-2/4

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2SB817C / 2SD1047C
hFE -- IC hFE -- IC
3 3
2SB817C 2SD1047C
Ta=120°C VCE= --5V VCE=5V
2
www.DataSheet4U.com 2 Ta=120°C
25°C
25°C
DC Current Gain, hFE

DC Current Gain, hFE

100 --40°C 100

7 7
--40°C
5 5

3 3

2 2

10 10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
Collector Current, IC -- A IT03414 Collector Current, IC -- A IT03415
VCE(sat) -- IC VCE(sat) -- IC
2 1.0
2SB817C 2SD1047C
7
IC / IB=10 IC / IB=10
Saturation Voltage, VCE(sat) -- V

Saturation Voltage, VCE(sat) -- V

--1.0 5
7
5 3

3 2
Collector-to-Emitter

2 Collector-to-Emitter
0.1
--0.1 7
0°
C
7 °C 5 12
5 = 120 C Ta
=
Ta 0°
--4 3
3 --40°C
25°
C 2
2
25°C
--0.01 0.01
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10
m
et4U.co Collector Current, IC -- A DataSheet4U.com
IT03416 Collector Current, IC -- A IT03417
ee
ASO PC -- Ta DataSh
5 3.0
3 ICP=20A 2SB817C / 2SD1047C 2SB817C / 2SD1047C
2
1m 2.5
Collector Dissipation, PC -- W

10
IC=12A 10 10m s
7 0
Collector Current, IC -- A

5 PC ms s
=1
3 20W 2.0
2
No
DC

1.0 he
7 1.5 at
op

5 sin
era

k
tio

3
n

2 1.0
0.1
7
5
Tc=25°C 0.5
3
2 Single pulse
0.01 (For PNP, minus sign is omitted.) 0
1.0 2 3 5 7 10 2 3 5 7 100 2 3 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT10415 Ambient Temperature, Ta -- °C IT03419
PC -- Tc
140
2SB817C / 2SD1047C
120
Collector Dissipation, PC -- W

100

80

60

40

20

0
0 20 40 60 80 100 120 140 160
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Case Temperature, Tc -- °C IT10416

No. A0188-3/4

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2SB817C / 2SD1047C

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et4U.co DataSheet4U.com

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of January, 2006. Specifications and information herein are subject
DataSheet4U.com to change without notice.

PS No. A0188-4/4

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