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Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
Publication Number 21526 Revision D Amendment 7 Issue Date November 16, 2009
Da ta Shee t (Retire d Pro duct)
Am29F200B
2 Megabit (256 K x 8-Bit/128 K x 16-Bit)
CMOS 5.0 Volt-only, Boot Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ 5.0 V for read and write operations ■ Top or bottom boot block configurations available
— Minimizes system level power requirements ■ Embedded Algorithms
■ Manufactured on 0.32 µm process technology — Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
— Compatible with 0.5 µm Am29F200A device
combination of designated sectors
■ High performance — Embedded Program algorithm automatically
— Access times as fast as 45 ns writes and verifies data at specified addresses
■ Low power consumption ■ Minimum 1,000,000 write/erase cycles guaranteed
— 20 mA typical active read current (byte mode) ■ 20-year data retention at 125° C
— 28 mA typical active read current for — Reliable operation for the life of the system
(word mode) ■ Package options
— 30 mA typical program/erase current — 44-pin SO
— 1 µA typical standby current — 48-pin TSOP
■ Sector erase architecture — Known Good Die (KGD)
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and (see publication number 21257)
three 64 Kbyte sectors (byte mode) ■ Compatible with JEDEC standards
— One 8 Kword, two 4 Kword, one 16 Kword, and — Pinout and software compatible with
three 32 Kword sectors (word mode) single-power-supply flash
— Supports full chip erase — Superior inadvertent write protection
— Sector Protection features:
■ Data# Polling and Toggle Bit
A hardware method of locking a sector to
— Detects program or erase cycle completion
prevent any program or erase operations within
that sector ■ Ready/Busy# output (RY/BY#)
Sectors can be locked via programming equipment — Hardware method for detection of program or
erase cycle completion
Temporary Sector Unprotect feature allows code
changes in previously locked sectors ■ Erase Suspend/Erase Resume
— Supports reading data from a sector not
being erased
■ Hardware RESET# pin
— Resets internal state machine to the reading
array data
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data Publication# 21526 Rev: D Amendment: 7
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. Issue Date: November 16, 2009
D A T A S H E E T
GENERAL DESCRIPTION
The Am29F200B is a 2 Mbit, 5.0 Volt-only Flash Device erasure occurs by executing the erase
memory organized as 262,144 bytes or 131,072 words. command sequence. This initiates the Embedded
The 8 bits of data appear on DQ0–DQ7; the 16 bits on Erase algorithm—an internal algorithm that automati-
DQ0–DQ15. The Am29F200B is offered in 44-pin SO cally preprograms the array (if it is not already
and 48-pin TSOP packages. The device is also avail- programmed) before executing the erase operation.
able in Known Good Die (KGD) form. For more During erase, the device automatically times the erase
information, refer to publication number 21257. This pulse widths and verifies proper cell margin.
device is designed to be programmed in-system with
The host system can detect whether a program or
the standard system 5.0 volt VCC supply. A 12.0 volt
erase operation is complete by observing the RY/BY#
VPP is not required for program or erase operations.
pin, or by reading the DQ7 (Data# Polling) and
The device can also be reprogrammed in standard
DQ6/DQ2 (toggle) status bits. After a program or
EPROM programmers.
erase cycle has been completed, the device is ready to
This device is manufactured using AMD’s 0.32 µm read array data or accept another command.
process technology, and offers all the features and ben-
The sector erase architecture allows memory sectors
efits of the Am29F200A, which was manufactured
to be erased and reprogrammed without affecting the
using 0.5 µm process technology.
data contents of other sectors. The device is fully
The standard device offers access times of 45, 50, 55 erased when shipped from the factory.
and 70 ns, allowing operation of high-speed micropro-
Hardware data protection measures include a low
cessors without wait states. To eliminate bus
VCC detector that automatically inhibits write opera-
contention the device has separate chip enable (CE#),
tions during power transitions. The hardware sector
write enable (WE#) and output enable (OE#) controls.
protection feature disables both program and erase
The device requires only a single 5.0 volt power operations in any combination of the sectors of memory.
supply for both read and write functions. Internally This can be achieved via programming equipment.
generated and regulated voltages are provided for the
The Erase Suspend feature enables the user to put
program and erase operations.
erase on hold for any period of time to read data from,
The device is entirely command set compatible with the or program data to, any sector that is not selected for
JEDEC single-power-supply Flash standard. Com- erasure. True background erase can thus be achieved.
mands are written to the command register using
The hardware RESET# pin terminates any operation
standard microprocessor write timings. Register con-
in progress and resets the internal state machine to
tents serve as input to an internal state-machine that
reading array data. The RESET# pin may be tied to the
controls the erase and programming circuitry. Write
system reset circuitry. A system reset would thus also
cycles also internally latch addresses and data needed
reset the device, enabling the system microprocessor
for the programming and erase operations. Reading
to read the boot-up firmware from the Flash memory.
data out of the device is similar to reading from other
Flash or EPROM devices. The system can place the device into the standby
mode. Power consumption is greatly reduced in this mode.
Device programming occurs by executing the program
command sequence. This initiates the Embedded AMD’s Flash technology combines years of Flash
Program algorithm—an internal algorithm that auto- memory manufacturing experience to produce the
matically times the program pulse widths and verifies highest levels of quality, reliability and cost effective-
proper cell margin. ness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 DQ2: Toggle Bit II ................................................................... 18
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Reading Toggle Bits DQ6/DQ2 ............................................... 18
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5 DQ5: Exceeded Timing Limits ................................................ 19
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DQ3: Sector Erase Timer ....................................................... 19
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 5. Toggle Bit Algorithm........................................................ 19
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7 Table 6. Write Operation Status ..................................................... 20
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8 Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 21
Table 1. Am29F200B Device Bus Operations ..................................8 Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 21
Word/Byte Configuration .......................................................... 8 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 22
Requirements for Reading Array Data ..................................... 8 TTL/NMOS Compatible .......................................................... 22
Writing Commands/Command Sequences .............................. 8 CMOS Compatible .................................................................. 23
Program and Erase Operation Status ...................................... 9 Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Standby Mode .......................................................................... 9 Figure 8. Test Setup....................................................................... 24
RESET#: Hardware Reset Pin ................................................. 9 Table 7. Test Specifications ........................................................... 24
Output Disable Mode ................................................................ 9 Key to Switching Waveforms. . . . . . . . . . . . . . . . 24
Table 2. Am29F200T Top Boot Block Sector Address Table .........10 AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25
Table 3. Am29F200B Bottom Boot Block Sector Address Table ....10 Read Operations .................................................................... 25
Autoselect Mode ..................................................................... 10 Figure 9. Read Operations Timings ............................................... 25
Table 4. Am29F200B Autoselect Codes (High Voltage Method) ....11 Hardware Reset (RESET#) .................................................... 26
Sector Protection/Unprotection ............................................... 11 Figure 10. RESET# Timings .......................................................... 26
Temporary Sector Unprotect .................................................. 11 Word/Byte Configuration (BYTE#) ...................................... 27
Figure 1. Temporary Sector Unprotect Operation........................... 11 Figure 11. BYTE# Timings for Read Operations............................ 27
Hardware Data Protection ...................................................... 11 Figure 12. BYTE# Timings for Write Operations............................ 27
Low VCC Write Inhibit ......................................................................12 Erase/Program Operations ..................................................... 28
Write Pulse “Glitch” Protection ........................................................12 Figure 13. Program Operation Timings.......................................... 29
Logical Inhibit ..................................................................................12 Figure 14. Chip/Sector Erase Operation Timings .......................... 30
Power-Up Write Inhibit ....................................................................12 Figure 15. Data# Polling Timings (During Embedded Algorithms). 31
Command Definitions . . . . . . . . . . . . . . . . . . . . . 12 Figure 16. Toggle Bit Timings (During Embedded Algorithms)...... 31
Reading Array Data ................................................................ 12 Figure 17. DQ2 vs. DQ6................................................................. 32
Reset Command ..................................................................... 12 Temporary Sector Unprotect .................................................. 32
Figure 18. Temporary Sector Unprotect Timing Diagram .............. 32
Autoselect Command Sequence ............................................ 12
Word/Byte Program Command Sequence ............................. 13 Alternate CE# Controlled Erase/Program Operations ............ 33
Figure 19. Alternate CE# Controlled Write Operation Timings ...... 34
Figure 2. Program Operation .......................................................... 13
Erase and Programming Performance . . . . . . . . 35
Chip Erase Command Sequence ........................................... 13
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 35
Sector Erase Command Sequence ........................................ 14
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 35
Erase Suspend/Erase Resume Commands ........................... 14
Figure 3. Erase Operation............................................................... 15 Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Command Definitions ............................................................. 16 Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 36
Table 5. Am29F200B Command Definitions ...................................16 SO 044—44-Pin Small Outline Package ................................ 36
DQ7: Data# Polling ................................................................. 17 TS 048—48-Pin Standard Thin Small Outline Package ......... 37
Figure 4. Data# Polling Algorithm ................................................... 17 Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 38
RY/BY#: Ready/Busy# ........................................................... 18
DQ6: Toggle Bit I .................................................................... 18
BLOCK DIAGRAM
DQ0–DQ15
RY/BY#
RY/BY#
VCC Buffer
VSS Erase Voltage Input/Output
Generator Buffers
State
WE#
Control
BYTE#
RESET# Command
Register PGM Voltage
Generator
Chip Enable Data
STB
CE# Output Enable Latch
OE# Logic
Y-Decoder Y-Gating
STB
Address Latch
A-1
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for
more information.
NC 1 44 RESET#
RY/BY# 2 43 WE#
NC 3 42 A8
A7 4 41 A9
A6 5 40 A10
A5 6 39 A11
A4 7 38 A12
A3 8 37 A13
A2 9 36 A14
A1 10 35 A15
A0 11 34 A16
CE# 12 SO 33 BYTE#
VSS 13 32 VSS
OE# 14 31 DQ15/A-1
DQ0 15 30 DQ7
DQ8 16 29 DQ14
DQ1 17 28 DQ6
DQ9 18 27 DQ13
DQ2 19 26 DQ5
DQ10 20 25 DQ12
DQ3 21 24 DQ4
DQ11 22 23 VCC
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21257 for
more information.
A15 1 48 A16
A14 2 47 BYTE#
A13 3 46 VSS
A12 4 45 DQ15/A-1
A11 5 44 DQ7
A10 6 43 DQ14
A9 7 42 DQ6
A8 8 41 DQ13
NC 9 40 DQ5
NC 10 39 DQ12
WE# 11 38 DQ4
RESET# 12 37 VCC
NC 13 Standard TSOP 36 DQ11
NC 14 35 DQ3
RY/BY# 15 34 DQ10
NC 16 33 DQ2
NC 17 32 DQ9
A7 18 31 DQ1
A6 19 30 DQ8
A5 20 29 DQ0
A4 21 28 OE#
A3 22 27 VSS
A2 23 26 CE#
A1 24 25 A0
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed
by a combination of the following:
Am29F200B T -45 E F
TEMPERATURE RANGE
I = Industrial (–40° C to +85° C)
F = Industrial (–40° C to +85° C) with Pb-free package
E = Extended (–55° C to +125° C)
K = Extended (–55° C to +125° C) with Pb-free package
PACKAGE TYPE
E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
S = 44-Pin Small Outline Package (SO 044)
This device is also available in Known Good Die (KGD) form. See publication number
21257 for more information.
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F200B
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS Flash Memory
5.0 Volt-only Program and Erase
Valid Combinations
Valid Combinations VCC Voltage
Valid Combinations list configurations planned to be sup-
AM29F200BT-45, EI, SI ported in volume for this device. Consult the local AMD sales
AM29F200BB-45 EF, SF office to confirm availability of specific valid combinations and
5.0 V ± 5%
to check on newly released combinations.
AM29F200BT-50,
AM29F200BB-50
AM29F200BT-55, EI, EE, EF, EK
AM29F200BB-55 SI, SE, SF, SK
5.0 V ± 10%
AM29F200BT-70,
AM29F200BB-70
BYTE# BYTE#
Operation CE# OE# WE# RESET# A0–A16 DQ0–DQ7 = VIH = VIL
Read L L H H AIN DOUT DOUT High-Z
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Note: See the sections Sector Group Protection and Temporary Sector Unprotect for more information.
An erase operation can erase one sector, multiple sec- If the device is deselected during erasure or program-
tors, or the entire device. The Sector Address Tables ming, the device draws active current until the
indicate the address space that each sector occupies. operation is completed.
A “sector address” consists of the address bits required
In the DC Characteristics tables, ICC3 represents the
to uniquely select a sector. See the “Command Defini-
standby current specification.
tions” section for details on erasing a sector or the
entire chip, or suspending/resuming the erase
RESET#: Hardware Reset Pin
operation.
The RESET# pin provides a hardware method of reset-
After the system writes the autoselect command ting the device to reading array data. When the system
sequence, the device enters the autoselect mode. The drives the RESET# pin low for at least a period of tRP,
system can then read autoselect codes from the the device immediately terminates any operation in
internal register (which is separate from the memory progress, tristates all data output pins, and ignores all
array) on DQ7–DQ0. Standard read cycle timings apply read/write attempts for the duration of the RESET#
in this mode. Refer to the “Autoselect Mode” and pulse. The device also resets the internal state
“Autoselect Command Sequence” sections for more machine to reading array data. The operation that was
information. interrupted should be reinitiated once the device is
ICC2 in the DC Characteristics table represents the ready to accept another command sequence, to
active current specification for the write mode. The “AC ensure data integrity.
Characteristics” section contains timing specification Current is reduced for the duration of the RESET#
tables and timing diagrams for write operations. pulse. When RESET# is held at VIL, the device enters
the TTL standby mode; if RESET# is held at VSS ±
Program and Erase Operation Status 0.5 V, the device enters the CMOS standby mode.
During an erase or program operation, the system may
The RESET# pin may be tied to the system reset cir-
check the status of the operation by reading the status
cuitry. A system reset would thus also reset the Flash
bits on DQ7–DQ0. Standard read cycle timings and ICC
memory, enabling the system to read the boot-up firm-
read specifications apply. Refer to “Write Operation
ware from the Flash memory.
Status” for more information, and to each AC Charac-
teristics section in the appropriate data sheet for timing If RESET# is asserted during a program or erase oper-
diagrams. ation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
Standby Mode time of tREADY (during Embedded Algorithms). The
When the system is not reading or writing to the device, system can thus monitor RY/BY# to determine whether
it can place the device in the standby mode. In this the reset operation is complete. If RESET# is asserted
mode, current consumption is greatly reduced, and the when a program or erase operation is not executing
outputs are placed in the high impedance state, inde- (RY/BY# pin is “1”), the reset operation is completed
pendent of the OE# input. within a time of tREADY (not during Embedded Algo-
rithms). The system can read data t RH after the
The device enters the CMOS standby mode when CE# RESET# pin returns to VIH.
and RESET# pins are both held at VCC ± 0.5 V. (Note
that this is a more restricted voltage range than VIH.) Refer to the AC Characteristics tables for RESET#
The device enters the TTL standby mode when CE# parameters and timing diagram.
and RESET# pins are both held at VIH. The device
requires standard access time (tCE) for read access Output Disable Mode
when the device is in either of these standby modes, When the OE# input is at VIH, output from the device is
before it is ready to read data. disabled. The output pins are placed in the high imped-
ance state.
The device also enters the standby mode when the
RESET# pin is driven low. Refer to the next section,
“RESET#: Hardware Reset Pin”.
Note for Tables 2 and 3: Address range is A16:A-1 in byte mode and A16:A0 in word mode. See the “Word/Byte Configuration”
sectionfor more information.
Autoselect Mode
The autoselect mode provides manufacturer and address must appear on the appropriate highest order
device identification, and sector protection verification, address bits. Refer to the corresponding Sector
through identifier codes output on DQ7–DQ0. This Address Tables. The Command Definitions table
mode is primarily intended for programming equipment shows the remaining address bits that are don’t care.
to automatically match a device to be programmed with When all necessary bits have been set as required, the
its corresponding programming algorithm. However, programming equipment may then read the corre-
the autoselect codes can also be accessed in-system sponding identifier code on DQ7–DQ0.
through the command register.
To access the autoselect codes in-system, the host
When using programming equipment, the autoselect system can issue the autoselect command via the
mode requires VID (11.5 V to 12.5 V) on address pin command register, as shown in the Command Defini-
A9. Address pins A6, A1, and A0 must be as shown in tions table. This method does not require VID. See
Autoselect Codes (High Voltage Method) table. In addi- “Autoselect Command Sequence” for details on using
tion, when verifying sector protection, the sector the autoselect mode.
01h
X
(protected)
Sector Protection Verification L L H SA X VID X L X H L
00h
X
(unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Protection/Unprotection
The hardware sector protection feature disables both START
program and erase operations in any sector. The hard-
ware sector unprotection feature re-enables both
program and erase operations in previously protected RESET# = VID
sectors. (Note 1)
Sector protection/unprotection must be implemented
using programming equipment. The procedure Perform Erase or
requires a high voltage (VID) on address pin A9 and the Program Operations
control pins. Details on this method are provided in a
supplement, publication number 20551. Contact an
AMD representative to obtain a copy of the appropriate RESET# = VIH
document.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting Temporary Sector
Unprotect
sectors at its factory prior to shipping the device Completed (Note 2)
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected
or unprotected. See “Autoselect Mode” for details. Notes:
1. All protected sectors unprotected.
Temporary Sector Unprotect 2. All previously protected sectors are protected once
This feature allows temporary unprotection of previ- again.
ously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the Figure 1. Temporary Sector Unprotect Operation
RESET# pin to VID. During this mode, formerly pro-
tected sectors can be programmed or erased by
selecting the sector addresses. Once VID is removed Hardware Data Protection
from the RESET# pin, all the previously protected
sectors are protected again. Figure 1 shows the algo- The command sequence requirement of unlock cycles
rithm, and the Temporary Sector Unprotect diagram for programming or erasing provides data protection
(Figure 18) shows the timing waveforms, for this against inadvertent writes (refer to the Command Defi-
feature. nitions table). In addition, the following hardware data
protection measures prevent accidental erasure or pro-
COMMAND DEFINITIONS
Writing specific address and data commands or ters, and Read Operation Timings diagram shows the
sequences into the command register initiates device timing diagram.
operations. The Command Definitions table defines the
valid register command sequences. Writing incorrect Reset Command
address and data values or writing them in the Writing the reset command to the device resets the
improper sequence resets the device to reading array device to reading array data. Address bits are don’t
data. care for this command.
All addresses are latched on the falling edge of WE# or The reset command may be written between the
CE#, whichever happens later. All data is latched on sequence cycles in an erase command sequence
the rising edge of WE# or CE#, whichever happens before erasing begins. This resets the device to reading
first. Refer to the appropriate timing diagrams in the array data. Once erasure begins, however, the device
“AC Characteristics” section. ignores reset commands until the operation is
complete.
Reading Array Data
The reset command may be written between the
The device is automatically set to reading array data
sequence cycles in a program command sequence
after device power-up. No commands are required to
before programming begins. This resets the device to
retrieve data. The device is also ready to read array
reading array data (also applies to programming in
data after completing an Embedded Program or
Erase Suspend mode). Once programming begins,
Embedded Erase algorithm.
however, the device ignores reset commands until the
After the device accepts an Erase Suspend command, operation is complete.
the device enters the Erase Suspend mode. The
The reset command may be written between the
system can read array data using the standard read
sequence cycles in an autoselect command sequence.
timings, except that if it reads at an address within
Once in the autoselect mode, the reset command must
erase-suspended sectors, the device outputs status
be written to return to reading array data (also applies
data. After completing a programming operation in the
to autoselect during Erase Suspend).
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase If DQ5 goes high during a program or erase operation,
Suspend/Erase Resume Commands” for more infor- writing the reset command returns the device to
mation on this mode. reading array data (also applies dur ing Erase
Suspend).
The system must issue the reset command to re-
enable the device for reading array data if DQ5 goes
Autoselect Command Sequence
high, or while in the autoselect mode. See the “Reset
Command” section, next. The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
See also “Requirements for Reading Array Data” in the and determine whether or not a sector is protected.
“Device Bus Operations” section for more information. The Command Definitions table shows the address
The Read Operations table provides the read parame- and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
The system can determine the status of the erase oper- should be reinitiated once the device has returned to
ation by using DQ7, DQ6, DQ2, or RY/BY#. See “Write reading array data, to ensure data integrity.
Operation Status” for information on these status bits.
When the Embedded Erase algorithm is complete, the
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
device returns to reading array data and addresses are
no longer latched. The system can determine the
no longer latched.
status of the erase operation by using DQ7, DQ6, DQ2,
Figure 3 illustrates the algorithm for the erase opera- or RY/BY#. Refer to “Write Operation Status” for infor-
tion. See the Erase/Program Operations tables in “AC mation on these status bits.
Characteristics” for parameters, and to the Chip/Sector
Figure 3 illustrates the algorithm for the erase opera-
Erase Operation Timings for timing waveforms.
tion. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Sector Erase Command Sequence
the Sector Erase Operations Timing diagram for timing
Sector erase is a six bus cycle operation. The sector waveforms.
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two Erase Suspend/Erase Resume Commands
additional unlock write cycles are then followed by the
The Erase Suspend command allows the system to
address of the sector to be erased, and the sector
interrupt a sector erase operation and then read data
erase command. The Command Definitions table
from, or program data to, any sector not selected for
shows the address and data requirements for the
erasure. This command is valid only during the sector
sector erase command sequence.
erase operation, including the 50 µs time-out period
The device does not require the system to preprogram during the sector erase command sequence. The
the memory prior to erase. The Embedded Erase algo- Erase Suspend command is ignored if written during
rithm automatically programs and verifies the sector for the chip erase operation or Embedded Program algo-
an all zero data pattern prior to electrical erase. The rithm. Writing the Erase Suspend command during the
system is not required to provide any controls or Sector Erase time-out immediately terminates the
timings during these operations. time-out period and suspends the erase operation.
Addresses are “don’t-cares” when writing the Erase
After the command sequence is written, a sector erase
Suspend command.
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase com- When the Erase Suspend command is written during a
mands may be written. Loading the sector erase buffer sector erase operation, the device requires a maximum
may be done in any sequence, and the number of of 20 µs to suspend the erase operation. However,
sectors may be from one sector to all sectors. The time when the Erase Suspend command is written during
between these additional cycles must be less than 50 the sector erase time-out, the device immediately ter-
µs, otherwise the last address and command might not minates the time-out period and suspends the erase
be accepted, and erasure may begin. It is recom- operation.
mended that processor interrupts be disabled during
After the erase operation has been suspended, the
this time to ensure all commands are accepted. The
system can read array data from or program data to
interrupts can be re-enabled after the last Sector Erase
any sector not selected for erasure. (The device “erase
command is written. If the time between additional
suspends” all sectors selected for erasure.) Normal
sector erase commands can be assumed to be less
read and write timings and command definitions apply.
than 50 µs, the system need not monitor DQ3. Any
Reading at any address within erase-suspended
command other than Sector Erase or Erase
sectors produces status data on DQ7–DQ0. The
Suspend during the time-out period resets the
system can use DQ7, or DQ6 and DQ2 together, to
device to reading array data. The system must
determine if a sector is actively erasing or is erase-sus-
rewrite the command sequence and any additional
pended. See “Write Operation Status” for information
sector addresses and commands.
on these status bits.
The system can monitor DQ3 to determine if the sector
After an erase-suspended program operation is com-
erase timer has timed out. (See the “DQ3: Sector Erase
plete, the system can once again read array data within
Timer” section.) The time-out begins from the rising
non-suspended sectors. The system can determine
edge of the final WE# pulse in the command sequence.
the status of the program operation using the DQ7 or
Once the sector erase operation has begun, only the DQ6 status bits, just as in the standard program oper-
Erase Suspend command is valid. All other commands ation. See “Wr ite Operation Status” for more
are ignored. Note that a hardware reset during the information.
sector erase operation immediately terminates the
The system may also write the autoselect command
operation. The Sector Erase command sequence
sequence when the device is in the Erase Suspend
Yes
Erasure Completed
Notes:
1. See the appropriate Command Definitions table for erase
command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Command Definitions
Table 5. Am29F200B Command Definitions
Bus Cycles (Notes 2–5)
Cycles
Command
Sequence First Second Third Fourth Fifth Sixth
(Note 1) Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
Read (Note 6) 1 RA RD
Reset (Note 7) 1 XXX F0
Word 555 2AA 555
Manufacturer ID 4 AA 55 90 X00 01
Byte AAA 555 AAA
Autoselect (Note 8)
Legend:
X = Don’t care PD = Data to be programmed at location PA. Data latches on the
RA = Address of the memory location to be read. rising edge of WE# or CE# pulse, whichever happens first.
RD = Data read from location RA during read operation. SA = Address of the sector to be verified (in autoselect mode) or
erased. Address bits A16–A12 uniquely select any sector.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
Notes:
1. See Table 1 for description of bus operations. 8. The fourth cycle of the autoselect command sequence is a
2. All values are in hexadecimal. read cycle.
3. Except when reading array or autoselect data, all bus cycles 9. The data is 00h for an unprotected sector and 01h for a
are write operations. protected sector. See “Autoselect Command Sequence” for
more information.
4. Data bits DQ15–DQ8 are don’t cares for unlock and
command cycles. 10. The system may read and program in non-erasing sectors, or
enter the autoselect mode, when in the Erase Suspend
5. Address bits A16–A11 are don’t cares for unlock and mode. The Erase Suspend command is valid only during a
command cycles, unless SA or PA required. sector erase operation.
6. No unlock or command cycles required when reading array 11. The Erase Resume command is valid only during the Erase
data. Suspend mode.
7. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5 goes
high (while the device is providing status data).
RY/BY#: Ready/Busy# The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 5 for the toggle bit
The RY/BY# is a dedicated, open-drain output pin that
algorithm, and to the Toggle Bit Timings figure in the
indicates whether an Embedded Algorithm is in
“AC Characteristics” section for the timing diagram.
progress or complete. The RY/BY# status is valid after
The DQ2 vs. DQ6 figure shows the differences
the rising edge of the final WE# pulse in the command
between DQ2 and DQ6 in graphical form. See also the
sequence. Since RY/BY# is an open-drain output,
subsection on “DQ2: Toggle Bit II”.
several RY/BY# pins can be tied together in parallel
with a pull-up resistor to VCC.
DQ2: Toggle Bit II
If the output is low (Busy), the device is actively erasing The “Toggle Bit II” on DQ2, when used with DQ6, indi-
or programming. (This includes programming in the cates whether a particular sector is actively erasing
Erase Suspend mode.) If the output is high (Ready), (that is, the Embedded Erase algorithm is in progress),
the device is ready to read array data (including during or whether that sector is erase-suspended. Toggle Bit
the Erase Suspend mode), or is in the standby mode. II is valid after the rising edge of the final WE# pulse in
Table 6 shows the outputs for RY/BY#. The timing dia- the command sequence.
grams for read, reset, program, and erase shows the DQ2 toggles when the system reads at addresses
relationship of RY/BY# to other signals. within those sectors that have been selected for era-
sure. (The system may use either OE# or CE# to
DQ6: Toggle Bit I control the read cycles.) But DQ2 cannot distinguish
Toggle Bit I on DQ6 indicates whether an Embedded whether the sector is actively erasing or is erase-sus-
Program or Erase algorithm is in progress or complete, pended. DQ6, by comparison, indicates whether the
or whether the device has entered the Erase Suspend device is actively erasing, or is in Erase Suspend, but
mode. Toggle Bit I may be read at any address, and is cannot distinguish which sectors are selected for era-
valid after the rising edge of the final WE# pulse in the sure. Thus, both status bits are required for sector and
command sequence (prior to the program or erase mode information. Refer to Table 6 to compare outputs
operation), and during the sector erase time-out. for DQ2 and DQ6.
During an Embedded Program or Erase algorithm Figure 5 shows the toggle bit algorithm in flowchart
operation, successive read cycles to any address form, and the section “DQ2: Toggle Bit II” explains the
cause DQ6 to toggle. (The system may use either OE# algorithm. See also the “DQ6: Toggle Bit I” subsection.
or CE# to control the read cycles.) When the operation Refer to the Toggle Bit Timings figure for the toggle bit
is complete, DQ6 stops toggling. timing diagram. The DQ2 vs. DQ6 figure shows the dif-
ferences between DQ2 and DQ6 in graphical form.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles
Reading Toggle Bits DQ6/DQ2
for approximately 100 μs, then returns to reading array
data. If not all selected sectors are protected, the Refer to Figure 5 for the following discussion. When-
Embedded Erase algorithm erases the unprotected ever the system initially begins reading toggle bit
sectors, and ignores the selected sectors that are status, it must read DQ7–DQ0 at least twice in a row to
protected. determine whether a toggle bit is toggling. Typically, a
system would note and store the value of the toggle bit
The system can use DQ6 and DQ2 together to deter- after the first read. After the second read, the system
mine whether a sector is actively erasing or is erase- would compare the new value of the toggle bit with the
suspended. When the device is actively erasing (that is, first. If the toggle bit is not toggling, the device has com-
the Embedded Erase algorithm is in progress), DQ6 pleted the program or erase operation. The system can
toggles. When the device enters the Erase Suspend read array data on DQ7–DQ0 on the following read
mode, DQ6 stops toggling. However, the system must cycle.
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use However, if after the initial two read cycles, the system
DQ7 (see the subsection on “DQ7: Data# Polling”). determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
If a program address falls within a protected sector, high (see the section on DQ5). If it is, the system
DQ6 toggles for approximately 2 μs after the program should then determine again whether the toggle bit is
command sequence is written, then returns to reading toggling, since the toggle bit may have stopped tog-
array data. gling just as DQ5 went high. If the toggle bit is no longer
DQ6 also toggles during the erase-suspend-program toggling, the device has successfully completed the
mode, and stops toggling once the Embedded program or erase operation. If it is still toggling, the
Program algorithm is complete. device did not complete the operation successfully, and
the system must write the reset command to return to of DQ3 prior to and following each subsequent sector
reading array data. erase command. If DQ3 is high on the second status
check, the last command might not have been
The remaining scenario is that the system initially
accepted. Table 6 shows the outputs for DQ3.
determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles,
determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start START
at the beginning of the algorithm when it returns to
determine the status of the operation (top of Figure 5).
Read DQ7–DQ0
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure Read DQ7–DQ0 (Note 1)
condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously pro- Toggle Bit No
grammed to “0.” Only an erase operation can change = Toggle?
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has Yes
exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the No
DQ5 = 1?
reset command to return the device to reading array
data.
Yes
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
Read DQ7–DQ0 (Notes
system may read DQ3 to determine whether or not an 1, 2)
Twice
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If addi-
tional sectors are selected for erasure, the entire time-
out also applies after each additional sector erase com- Toggle Bit No
mand. When the time-out is complete, DQ3 switches = Toggle?
from “0” to “1.” The system may ignore DQ3 if the
system can guarantee that the time between additional
sector erase commands will always be less than 50 μs. Yes
See also the “Sector Erase Command Sequence” Program/Erase
section. Operation Not Program/Erase
Complete, Write Operation Complete
After the sector erase command sequence is written, Reset Command
the system should read the status on DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure the device has Notes:
accepted the command sequence, and then read DQ3. 1. Read toggle bit twice to determine whether or not it is
If DQ3 is “1”, the internally controlled erase cycle has toggling. See text.
begun; all further commands (other than Erase Sus- 2. Recheck toggle bit because it may stop toggling as DQ5
pend) are ignored until the erase operation is complete. changes to “1”. See text.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been Figure 5. Toggle Bit Algorithm
accepted, the system software should check the status
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During
voltage transitions, input or I/O pins may overshoot VSS to
–2.0 V for periods of up to 20 ns. See Figure 6. Maximum
20 ns
DC voltage on input or I/O pins is VCC +0.5 V. During
voltage transitions, input or I/O pins may overshoot to VCC VCC
+2.0 V for periods up to 20 ns. See Figure 7. +2.0 V
2. Minimum DC input voltage on pins A9, OE#, and RESET# VCC
is –0.5 V. During voltage transitions, A9, OE#, and +0.5 V
RESET# may overshoot VSS to –2.0 V for periods of up to 2.0 V
20 ns. See Figure 6. Maximum DC input voltage on pin A9
is +12.5 V which may overshoot to +13.5 V for periods up 20 ns 20 ns
to 20 ns.
Figure 7. Maximum Positive
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater
Overshoot Waveform
than one second.
Note: Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only; functional operation of the device at
these or any other conditions above those indicated in the op-
erational sections of this data sheet is not implied. Exposure
of the device to absolute maximum rating conditions for ex-
tended periods may affect device reliability.
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . –40°C to +85°C
Extended (E) Devices
Ambient Temperature (TA) . . . . . . . . –55°C to +125°C
VCC Supply Voltages
VCC for ± 5% devices . . . . . . . . . . .+4.75 V to +5.25 V
VCC for± 10% devices . . . . . . . . . . . .+4.5 V to +5.5 V
Note: Operating ranges define those limits between which
the functionality of the device is guaranteed.
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol Parameter Description Test Conditions Min Max Unit
ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ±1.0 µA
A9, OE# , RESET# Input Load VCC = VCC Max,
ILIT 50 µA
Current A9, OE# , RESET# = 12.5 V
ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ±1.0 µA
Byte 40
ICC1 VCC Active Read Current (Notes 1, 2) CE# = VIL, OE# = VIH mA
Word 50
VOH Output High Voltage IOH = –2.5 mA, VCC = VCC Min 2.4 V
Notes:
1. The ICC current is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Program or Erase Algorithm is in progress.
4. Not 100% tested.
DC CHARACTERISTICS (Continued)
CMOS Compatible
Parameter
Symbol Parameter Description Test Conditions Min Typ Max Unit
ILI Input Load Current VIN = VSS to VCC, VCC = VCC Max ±1.0 µA
A9, OE# , RESET# Input VCC = VCC Max;
ILIT 50 µA
Load Current A9, OE# , RESET# = 12.5 V
ILO Output Leakage Current VOUT = VSS to VCC, VCC = VCC Max ±1.0 µA
VOL Output Low Voltage IOL = 5.8 mA, VCC = VCC Min 0.45 V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Program or Erase Algorithm is in progress.
4. Not 100% tested.
5. ICC3 for extended temperature is 20 µA max (>+85° C).
TEST CONDITIONS
Table 7. Test Specifications
5.0
-45, -50, All
Test Condition -55 others Unit
2.7 kΩ
Device Output Load 1 TTL gate
Under
Test Output Load Capacitance, CL
30 100 pF
(including jig capacitance)
CL 6.2 kΩ
Input Rise and Fall Times 5 20 ns
Steady
Changing from H to L
Changing from L to H
AC CHARACTERISTICS
Read Operations
Parameter Speed Options
JEDEC Std Description Test Setup -45 -50 -55 -70 Unit
CE# = VIL
tAVQV tACC Address to Output Delay Max 45 50 55 70 ns
OE# = VIL
tELQV tCE Chip Enable to Output Delay OE# = VIL Max 45 50 55 70 ns
Notes:
1. Not 100% tested.
2. See Figure 8 and Table 7 for test specifications
tRC
tDF
tOE
OE#
tOEH
WE# tCE
tOH
HIGH Z HIGH Z
Outputs Output Valid
RESET#
RY/BY#
0V
Figure 9. Read Operations Timings
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter Speed Options
CE#
OE#
BYTE#
tELFL
BYTE# DQ0–DQ14 Data Output Data Output
Switching (DQ0–DQ14) (DQ0–DQ7)
from word
to byte
mode DQ15/A-1 DQ15 Address
Output Input
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte DQ0–DQ14 Data Output Data Output
to word (DQ0–DQ7) (DQ0–DQ14)
mode
DQ15/A-1 Address DQ15
Input Output
tFHQV
CE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note:
Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 12. BYTE# Timings for Write Operations
AC CHARACTERISTICS
Erase/Program Operations
Parameter Speed Options
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
AC CHARACTERISTICS
Program Command Sequence (last two cycles) Read Status Data (last two cycles)
tWC tAS
Addresses 555h PA PA PA
tAH
CE#
tCH
OE#
tWP tWHWH1
WE#
tWPH
tCS
tDS
tDH
tBUSY tRB
RY/BY#
tVCS
VCC
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 13. Program Operation Timings
AC CHARACTERISTICS
Erase Command Sequence (last two cycles) Read Status Data
tWC tAS
Addresses 2AAh SA VA VA
555h for chip erase
tAH
CE#
OE# tCH
tWP
WE#
tWPH tWHWH2
tCS
tDS
tDH
In
Data 55h 30h Progress Complete
tBUSY tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (”see “Write Operation Status”).
2. Illustration shows device in word mode.
AC CHARACTERISTICS
tRC
Addresses VA VA VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ7 Complement Complement True Valid Data
High Z
DQ0–DQ6 Status Data Status Data True Valid Data
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 15. Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses VA VA VA VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH tDF
WE#
tOH
High Z
DQ6/DQ2 Valid Status Valid Status Valid Status Valid Data
(first read) (second read) (stops toggling)
tBUSY
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read
cycle, and array data read cycle
AC CHARACTERISTICS
Enter
Embedded Erase Enter Erase Erase
Erasing Suspend Suspend Program Resume
WE# Erase Erase Suspend Erase Erase Suspend Erase Erase
Read Suspend Read Complete
Program
DQ6
DQ2
Note: The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-sus-
pended sector.
Figure 17. DQ2 vs. DQ6
tVIDR VID Rise and Fall Time (See Note) Min 500 ns
12 V
RESET#
0 or 5 V 0 or 5 V
tVIDR tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter Speed Options
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
AC CHARACTERISTICS
Addresses PA
tWC tAS
tAH
tWH
WE#
tGHEL
OE#
tCP tWHWH1 or 2
CE#
tWS tCPH
tBUSY
tDS
tDH
DQ7# DOUT
Data
tRH A0 for program PD for program
55 for erase 30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence, with the device in word mode.
Notes:
1. Typical program and erase times assume the following conditions: 25×C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V (VCC = 4.75 V for ±5% devices), 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Parameter Description Min Max
Input Voltage with respect to VSS on all I/O pins –1.0 V VCC + 1.0 V
Note: Includes all pins except VCC. Test conditions: VCC = 5.0 V, one pin at a time.
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25° C, f = 1.0 MHz.
DATA RETENTION
Parameter Test Conditions Min Unit
150° C 10 Years
Minimum Pattern Data Retention Time
125° C 20 Years
PHYSICAL DIMENSIONS
SO 044—44-Pin Small Outline Package
PHYSICAL DIMENSIONS
TS 048—48-Pin Standard Thin Small Outline Package
REVISION SUMMARY
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.