PD - 97171

IRF7836PbF
HEXFET® Power MOSFET
Applications
VDSS RDS(on) max Qg
l Synchronous MOSFET for Notebook
Processor Power 30V 5.7m:@VGS = 10V 18nC
l Synchronous Rectifier MOSFET for
isolated DC-DC Converters in
Networking Systems A
A
1 8
S D
2 7
S D
Benefits 3 6
S D
l Very Low RDS(on) at 4.5V VGS
4 5
G D
l Low Gate Charge
l Fully Characterized Avalanche Voltage SO-8
Top View
and Current
l 100% Tested for RG
l Lead-Free

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 20
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 17
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 13 A
IDM Pulsed Drain Current c 130
PD @TA = 25°C Power Dissipation f 2.5 W
PD @TA = 70°C Power Dissipation f 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range

Thermal Resistance
Parameter Typ. Max. Units
RθJL g
Junction-to-Drain Lead ––– 20 °C/W
RθJA Junction-to-Ambient fg ––– 50

Notes  through … are on page 9

www.irf.com 1
01/05/06
IRF7836PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 4.5 5.7 mΩ VGS = 10V, ID = 17A e
––– 5.7 7.1 VGS = 4.5V, ID = 13A e
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V VDS = VGS, ID = 50µA
∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C
IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
gfs Forward Transconductance 70 ––– ––– S VDS = 15V, ID = 13A
Qg Total Gate Charge ––– 18 27
Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.1 ––– VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge ––– 1.5 ––– nC VGS = 4.5V
Qgd Gate-to-Drain Charge ––– 5.8 ––– ID = 13A
Qgodr Gate Charge Overdrive ––– 6.6 ––– See Fig. 17 & 18
Qsw Switch Charge (Qgs2 + Qgd) ––– 7.3 –––
Qoss Output Charge ––– 11 ––– nC VDS = 16V, VGS = 0V
Rg Gate Resistance ––– 1.0 1.7 Ω
td(on) Turn-On Delay Time ––– 8.9 ––– VDD = 15V, VGS = 4.5V
tr Rise Time ––– 11 ––– ID = 13A
td(off) Turn-Off Delay Time ––– 12 ––– ns Clamped Inductive Load
tf Fall Time ––– 4.2 ––– See Fig. 15
Ciss Input Capacitance ––– 2400 ––– VGS = 0V
Coss Output Capacitance ––– 500 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 230 ––– ƒ = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d ––– 130 mJ
IAR Avalanche Current c ––– 13 A

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 3.1 A MOSFET symbol D

(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 130 A integral reverse G

(Body Diode)c p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 13A, VGS = 0V e
trr Reverse Recovery Time ––– 15 23 ns TJ = 25°C, IF = 13A, VDD = 15V
Qrr Reverse Recovery Charge ––– 17 26 nC di/dt = 500A/µs e
See Fig. 16
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

2 www.irf.com
 IRF7836PbF
1000 1000
VGS VGS
TOP 10V TOP 10V
5.0V 5.0V
4.5V 4.5V
100

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

3.5V 3.5V
3.0V 100 3.0V
2.7V 2.7V
2.5V 2.5V
BOTTOM 2.3V BOTTOM 2.3V
10

10

1
2.3V
1
0.1
2.3V ≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
0.01 0.1
0.1 1 10 100 1000 0.1 1 10 100 1000
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
ID = 17A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current (A)

100
1.5
(Normalized)

10 T J = 25°C

T J = 150°C
1.0
1

VDS = 15V
≤60µs PULSE WIDTH
0.1 0.5
1 2 3 4 5 -60 -40 -20 0 20 40 60 80 100 120 140 160

VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
www.irf.com 3
 IRF7836PbF
100000 5.0
VGS = 0V, f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
ID= 13A
Crss = C gd VDS= 24V

VGS, Gate-to-Source Voltage (V)

Coss = Cds + Cgd 4.0
VDS= 15V
VDS= 6.0V
C, Capacitance (pF)

10000
3.0

Ciss
2.0
1000
Coss
1.0
Crss

100 0.0
1 10 100 0 2 4 6 8 10 12 14 16 18 20 22
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)

100
ISD, Reverse Drain Current (A)

100
100µsec
T J = 150°C
10
T J = 25°C 1msec
10

1 10msec

1
0.1 T A = 25°C
Tj = 150°C
VGS = 0V
Single Pulse
0.1 0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
4 www.irf.com
 IRF7836PbF
18 2.5

16

VGS(th) , Gate Threshold Voltage (V)

14
2.0
ID, Drain Current (A)

12

10 ID = 50µA
1.5
8

6
1.0
4

0 0.5
25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150
T A , Ambient Temperature (°C) T J , Temperature ( °C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature

100

D = 0.50
10 0.20
0.10
Thermal Response ( Z thJA )

0.05
1 0.02 R1
R1
R2
R2
R3
R3 Ri (°C/W) τi (sec)
0.01 τJ τA
τJ τA 5.745666 0.00553
τ1 τ2 τ3
0.1 τ1 τ2 τ3 27.28631 1.1417
Ci= τi/Ri
Ci= τi/Ri
16.97549 46.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Ta
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 1000

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com 5
IRF7836PbF
16 500
RDS(on), Drain-to -Source On Resistance (m Ω)

ID = 17A ID

EAS , Single Pulse Avalanche Energy (mJ)

14 TOP 1.0A
400 1.3A
12 BOTTOM 13A

10
300
T J = 125°C
8

6 200

4
T J = 25°C 100
2

0 0
0 2 4 6 8 10 12 14 16 18 25 50 75 100 125 150

VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (°C)

Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy
vs. Drain Current

LD
VDS
15V

VDD
L DRIVER
VDS

D.U.T
RG D.U.T + VGS
V
- DD
IAS A Pulse Width < 1µs
VGS
20V Duty Factor < 0.1%
tp 0.01Ω

Fig 14a. Unclamped Inductive Test Circuit Fig 15a. Switching Time Test Circuit
V(BR)DSS VDS
tp 90%

10%
VGS

td(on) tf td(off) tr
I AS
Fig 14b. Unclamped Inductive Waveforms Fig 15b. Switching Time Waveforms
6 www.irf.com
 IRF7836PbF
Driver Gate Drive
P.W.
D.U.T P.W.
Period D=
Period
+

ƒ VGS=10V *
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
‚ Recovery Body Diode Forward
-
„ + Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
 dv/dt
VDD

RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• ISD controlled by Duty Factor "D" - Inductor Curent
• D.U.T. - Device Under Test

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

Current Regulator Id
Same Type as D.U.T. Vds

Vgs
50KΩ

12V .2µF
.3µF

+
V
D.U.T. - DS
Vgs(th)
VGS

3mA

IG ID Qgs1 Qgs2 Qgd Qgodr

Current Sampling Resistors

Fig 17. Gate Charge Test Circuit Fig 18. Gate Charge Waveform

www.irf.com 7
IRF7836PbF
SO-8 Package Outline (Dimensions are shown in millimeters (inches)
,1&+(6 0,//,0(7(56
',0
' % 0,1 0$; 0,1 0$;
$  $    
$    
E    
    F    
 + '    
( >@ $ (    
   
H %$6,& %$6,&
H  %$6,& %$6,&
+    
.    
; H
/    
\ ƒ ƒ ƒ ƒ

H .[ƒ
$
& \

>@
;E $ ;/ ;F

>@ & $ % 

)22735,17
127(6
',0(16,21,1* 72/(5$1&,1*3(5$60(<0 ;>@
&21752//,1*',0(16,210,//,0(7(5
',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@
287/,1(&21)250672-('(&287/,1(06$$
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
>@
',0(16,21'2(6127,1&/8'(02/'3527586,216
02/'3527586,21612772(;&(('>@
',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72
$68%675$7(
;>@ ;>@

SO-8 Part Marking

(;$03/(7+,6,6$1,5)026)(7
'$7(&2'(<::
3 '(6,*1$7(6/($')5((
352'8&7237,21$/
< /$67',*,72)7+(<($5
;;;; :: :((.
,17(51$7,21$/ ) $ $66(0%/<6,7(&2'(
5(&7,),(5 /27&2'(
/2*2
3$57180%(5

8 www.irf.com
 IRF7836PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 1.4mH, RG = 25Ω, IAS = 13A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
… Rθ is measured at TJ approximately 90°C.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.01/06
www.irf.com 9