• ,.

, •<J • JLJ"1 V,c

J

g prin cipal planes in a cubic crys tal

4 Sketch the follo \\·in
(b) (010) (c ) (001 )
(a, ( 100)

Ans. z• z z
I
I y y
1)
av _
/
2a
a
X ( 100) (010) X (001 )

<a) (b ) (c)

1h e planes (I JO ), ( lO I) , and (0 I O in a cu bi c lattice.

.S Sketeb
Ans. z z
3a

I I I
t )--J~ ~ 3CJ Y y Ja r
I i,..; _:.,,
)~ .,,

(1 j 0)
 the planes ( 11 1) and (212) in a cubic crysta.1
sboW
z.6
A11s. z 3a z
3a

3a Y

3a
X ( Ill) X (212)

_ Give the Miller indices for the plane shown in Fig. 2.P?. l.
27

le
---
I
--..;:-----------
/ .-------.,,/' 2b
I _,,,
I .,,,.,,,
/
/, _ / /
1/
3a

Fig. 2.P7.l Crystal lattice plane

Ans. (236)

2.8 Calculate the Miller indices for a plane that cuts the intercepts a = l2 , b = 2,

and c = ½along the x, y, and z axes, respectively.

[Hint: Common denominator = 2]
Ans. (416)
2·9 A single-crystal material has a body-centered cubic structure with lattice
constant a = 5.5 A. Calculate the volume density of atoms in a unit cell.

[Hint: Each unit cell has 8 x ~ (corner atom) + l (body centre atom)
== 2 atoms]
Ans. l .2 x 1022 atoms/cm3
-
2,10 Cn l 1ate f T rystal ·
c1 cu the surface density of atoms on the (110) plane o a st icon c
[Hint: (110 ) plane has 4 x J_ + 1 x l + 2 = 4 atoms/cell. Swface density
4 ~ 2
== 4
~ with a = 5.43 Al 1

' . 9 t.;9 x 1o'4atoms/cm-

/ an .... . . .
 electrons in silicon
JJ [)ek~nuine the densily -of.. states effec~ive mass ~1f
ss oJ electrons. · Assun"'r-
. _ 0.98.111 \,~·md ,,,r == l). l 9m0, where m0 1s the resr nrn
m1-

S<>l11/ion
From e~r~s~inn (3J2) we get
J)l /2
(m · ,
!r' ~= 6tm1m,
This give~
111* = 62.n (1,~,,~2 )t/J (3.3. 1)
n
in
Substituting the given values in Eqn (3.3. l) 1-esults
,,,*n = 6213 [0.98(0. 19)21113 m0 = 1.lmo
3
is dop ed wit h 10 1
() P ato ms /cm • Calculate the equilibrium hol
3.4 A Si waf er
concentration p0 at 300 K. How is10Er loc ated relative to Ei? Sketch the resuJtia:
- 3 Cl
ban d diagram . Tak e n; = 1.5 x I 0 cm

Solution
s to
For Nd>> n;, we can assume 110 =Nd.This lead
20
111 2.25 XI 0 104 cm-3
Po= - =- - -- =2.25 x
''o l 016
From Eqn (3.42), we can write
110 = ll ;etE F-E ,)tkT
This gives

EF - E; = kT In 'lo (3.4.1)
11;

Putting the given values in Eqn (3.4.1). we get

EF - E; = 0.0259 In( l.5xl01010 J= 0 ·347 ey

16

The resulting band diagram would be

EF

''(
1 0.347 eV
__ _ j__ __ __ _ _ E,

EI
 Qetennine the conductivity effective mass of electro 10. S.
3·5 ·ven in solved example 3 3 ns 1. Use them, and
m, values gi · ·

Solution
expression (3.69), the conductivity effective mass mnc
* is given by
Fro n1
_L = +
m:c 3 m1 m1
l(_l 1.) (3.5.1)

putting the given values in Eqn (3.5. l) results in

_L = l(
1 + 2 )
n~c 3 0.98171o O. l 9m0

This yields
_l_ = 0.26m0
mnc
*

14 3
3.6 A particular sample of germanium has a donor density Nd= I 0 atoms/cm .
Assuming all donor atoms to be ionized, calculate the resistivity of the sample.

Solution
For n >> p , the conductivity, CJ", is given by
CJ'= neµ 11

This implies
p = l = _l_ (3 .6.1)
a neµ,,
From Table 3.1 , µ 11 = 3900 cm2N s for Ge at 300 T. Thus resistivity p, using
(3.6.l), is
p= l = 16.03 Q cm
19
10 14 X 1.6 X }0- X 3900
16 3
3.7 A sample of Si is doped with As to a level of 5 x 10 atoms/cm . Calculate
the resistivity of the sample. Oetennine the Hall coefficient and the Hall voltage
5
if the thickness of the sample is 200 µm ,Ix= 2 mA, and B2 = 5 kG = 5 x 10- Wb/
cm2 . Assume µ ,, = 800 cnl/Vs.

Solution
l I (3.7. I)
. . .
Res1st1v1ty p = -a == qµ,,no
Putti ng the given values in Eqn (3.7.1) results in
_ I = 0. I 56 Q cm
16
p - 1.6 X !0- 19 :X 800 X 5 X ]0
Hall coefficient, RH, for an n-type semiconductor is given by
RH= _J_
en (3.7.2)
Putting the given value in Eqn (3.7.2) yields
1 = -125 cm 3/c.
RH= _J_ - -
en - 1.6x1 0-19 x5xl 016
The Hall voltage VH using Eqn (3.82) is given by

VH -- lxBz R
d H (3.7.3)

~here dis the sample thickness. Putting appropriate values in Eqn (3. 7.3) results
lil

3 5
VH = (2 X 10- )(5 X 10- )(-125 )
(2 X 10-2 )
= -62.5 X 10-5 V