COMPUTERSCI

ENCE&TECHNOLOGY
B. 1StYear
Tech- /1stSem
Exami
nati
on 
MarksofCl
ass Tot
al
Cour
se Marks
Cour
seTitl
e work Marks
Code Theor
y Pract
ical
HUM101C ENGLI SHLANGUAGESKI
LLS  25 75 0 100
MATH101C MATHEMATI CS-
I 25 75 0 100
PHY109C SEMI CONDUCTORPHYSI
CS 
25 75 0 100
EE101C BASI
C ELECTRI
CAL  25 75 0
ENGI
NEERING  
  
  
  
  
  
  
  
  100

ME101C ENGI
NEERI
NGGRAPHI
CS&DESI
GN  25 0 75 100

HUM103C ENGLISHLANGUAGE LAB  25 0 75 100

PHY119C SEMICONDUCTORPHYSICSLAB 
25 0 75 100
EE181C BASI
C ELECTRI
CAL ENGI
NEERI
NG 
LAB 25 0 75 100

MC101C INDUCTI ONPROGRAM 25 75 00 100

               Total                Gr.
-A 375 300 900
 
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
  
   
  
  
  
  
  
  
  
   
  
  
  
  
  
  
  225

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
1]
 HUM 101C(
ENGLI
SHLANGUAGESKI
LLS)
B. 1StYear
Tech- /1stSem
I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s

UNI
TI:BASI
CWRI
TINGSKI
LLS
(
a)Subj
ectVer
bAgr
eement
(
b)NounPr
onounAgr
eement
(
c)Gov
ernanceofNounsThr
oughPr
eposi
ti
ons
(
d)Basi
cVer
bPat
ter
ns(
V,SV,
SVO,
SVOO,
SVC,
SVOC,
SVOA)
UNI
TII
:VOCABULARYBUI
LDI
NG
(
a)Onewor
dsubst
it
uton*
i (Li
stat
tached)
(
b)Phr
asal bs*(
Ver Listat
tached)
(
b)Commonl
yusedI
dioms*(
Listat
tached)
(
d)Wor
ds/
Phr
ases/
Idi
omsf
rom t
het
ext
spr
escr
ibedi
nUni
tIV-
-thei
rmeani
ngand
usei
nsent
ences.
UNI
TII
I:CREATI
NGGRAMMATI
CALCOHESI
ON
(
a)Ref
err
ingTi
mei
nLanguage(
Tenses)
(
b)UseofCondi
ti
onal
Sent
ences
(
c)UseofAct
iveandPassi
veVoi
ce
(
d)Sy
nthesi
sofSent
encesusi
ngCoor
dinat
ingandSubor
dinat
ingConj
unct
ions
UNI
TIV:READI
NGANDWRI
TINGPRACTI
CES
(
a)Li
ter
aryText
s:
i
.“TheSecr
etofWor
k”bySwami
Viv
ekananda
i
i
.“Publ
i
cTr
anspor
tinLondonandDel
hi”byNi
radC.Chaudhur
i
i
i
i.“
AnOut
li
neofI
ntel
l
ect
ual
Rubbi
sh”byBer
trandRussel
l
i
v.“
Mot
herTer
esa”byKhushwantSi
ngh
(
b)Wr
it
ingof
fi
cial
Let
ter
s-I
ssuesConcer
ningSt
udent
s’academi
candsoci
all
i
fe
(
c)EssayWr
it
ing
(
d)Par
agr
aphWr
it
ing

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
2]
REFERENCES:
-
Bhat
nagar
,Ni
ti
nandMamt
aBhat .Communi
nagar cat
iveEngl
i
shf
orEngi
neer
sand
Pr
ofessi
onal
s.Pear
sonEducat
ion,
2013.
(Thesof
tcopyoft
hebooki
sav
ail
abl
eint
he
uni
ver
sit
yli
brar
y)
2.Bhat
nagar Ed.TheSpect
,k.Manmohan. rum ofLi
fe:AnAnt
hol
ogyofModer
n
Pr
ose.Del
hi:
Macmi
l
lanI
ndi
aLt
d.,
2006.
3.Si
nha,
R. Cur
P. rentEngl
i
shGr
ammarandUsage.OUP,
2017.
4.Ri
zvi
,M.Ashr
af.Ef
fect
iveTechni
calCommuni
cat
ion.McGr
awHi
l
lEducat
ion(
Indi
a)
Pv
t.Lt
d.,
2014.
5.East John.Oxf
wood, ordGui
det
oEngl
i
shGr
ammar
.OUP,
2010.
6.Kumar
,Sanj a.Communi
ayandPushpLat cat
ionSki
l
ls.OUP,
2011.
7. Raman, Meenakshi and Sangeet
a Shar Communi
ma. cat
ion Ski
l
ls.
New
Del
hi:
OUP,
2011.
ht
tp:
//y
ousi
gma.
com/
rel
i
gionandphi
l
osophy
/swami
vi
vekananda/
thescecr
etof
wor
k.pdf

MATH101CMATHEMATI
CS-
I
B. 1StYear
Tech- /1stSem

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
3]
 I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s
UNI
T-I
Mat
ri
cesaddi
ti
onandscal
armul
ti
pli
cat
ion,mat
ri
xmul
ti
pli
cat
ion;Li
nearsy
stemsof
equat
ions,l
i
nearI
ndependence,r
ank ofa mat
ri
x,det
ermi
nant
s,Cr
amer
's Rul
e,
i
nver
seofamat
ri
x,Gaussel
i
minat
ionandGauss-
Jor
danel
i
minat
ion.
UNI
T-I
I
Ei
genv
alues,Ei
genv
ect
ors,Cay
leyHami
l
tanTheor
em sy
mmet
ri
c,skew-
symmet
ri
c,
andor
thogonalMat
ri
ces,Ei
genspace.Di
agonal
i
zat
ion;I
nnerpr
oductspaces,Gr
am-
Schmi
dtor
thogonal
i
zat
ion.
UNI
T-I
II
Tay
lor
'sandMacl
aur
int
heor
emswi
thr
emai
nder
s;Maxi
maandmi
nmaoff
unct
ionof
si
ngl
eindependentv
ari
abl
e.Cur
vat
ure&Asy
mpt
otes(
Car
tesi
anandpol
arf
orm)
,
Ev
olut
esand i
nvol
utes;Ev
aluat
ion ofdef
ini
te and i
mpr
operi
ntegr
als;Bet
a and
Gammaf
unct
ionsandt
hei
rpr
oper
ti
es;Appl
i
cat
ionsofdef
ini
tei
ntegr
alst
oev
aluat
e
sur
facear
easandv
olumesofr
evol
uti
ons.
UNI
T-I
V
Vect
orspace,l
i
neardependenceandi
ndependenceofv
ect
ors,basi
s,di
mensi
on;
Li
neart
ransf
ormat
ions(
maps)
,rangeandker
nelofal
i
nearmap,r
ankandnul
l
ity
,
I
nver
seofal
i
neart
ransf
ormat
ion,r
ank-
nul
l
ityt
heor
em,composi
ti
onofl
i
nearMaps,
Mat
ri
xassoci
atedwi
thal
i
nearmap.

TEXTBOOKS:
1.Er
winKr
eyszi
g,Adv
ancedEngi
neer
ingMat
hemat
ics,9t
hEdi
ti
on,JohnWi
l
ey&
Sons,
2006.
2.N.
P.Bal
iandMani
shGoy
al,
AtextbookofEngi
neer
ingMat
hemat
ics,
Laxmi
Publ
i
cat
ions,
Repr
int
,2008.
3.B.
S.Gr
ewal
,Hi
gherEngi
neer
ingMat
hemat
ics,KhannaPubl
i
sher
s,36t
hEdi
ti
on,
2010.

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
4]
REFERENCEBOOKS:
1.G.
B.Thomas and R.
L.Fi
nney
,Cal
cul
us and Anal
yti
c Geomet
ry,9t
h Edi
ti
on,
Pear
son
Educat
ion.
2.D.Pool
e,Li
nearAl
gebr
a:AModer
nInt
aiduct
ion,
2ndEdi
ti
on,
Brooks/
Col
e,2005.
3.Veer
araj
anT.
,Engi
neer
ingMat
hemat
icsf
orf
ir
sty
ear
,Tat
aMcGr
aw-
Hil
l
,NewDel
hi,
2008.
4.RamanaB.
V.,Hi
gherEngi
neer
ingMat
hemat
ics,Tat
aMcGr
awHi
l
lNewDel
hi,11t
h
Repr
int
,2010.
5.V.Kr
ishnamur
thy
,V.
P.Mai
nraandJ.
L.Ar
ora,
Ani
ntr
oduct
iont
oLi
nearAl
gebr
a,
Af
fi
li
atedEast
-Westpr
ess,
Repr
int2005.

PHY109C(
SEMI
CONDUCTORPHYSI
CS)
B. 1StYear
Tech- /1stSem
Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
5]
 I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s

UNI
T–I
(ELECTRONI
CMATERI
ALS)
Fr
eeel
ect
ront
heor
y,Densi
tyofst
atesandener
gybanddi
agr
ams,Kr
oni
g-Penny
model
(to
i
ntr
oduceor
igi
nofbandgap)
,Ener
gybandsi
nsol
i
ds,
E-kdi
agr
am,
Dir
ectandi
ndi
rect
bandgaps,Ty
pesofel
ect
roni
cmat
eri
als:met
als,semi
conduct
ors,andi
nsul
ator
s,
Densi
tyofst
ates,
Occupat
ionpr
obabi
l
ity
,Fer
mil
evel
,Ef
fect
ivemass,
Phonons.
UNI
T–I
I(
SEMI
CONDUCTORS)
I
ntr
insi
c and ext
ri
nsi
c semi
conduct
ors,Dependence ofFer
mil
evelon car
ri
er-
concent
rat
ionandt
emper
atur
e(equi
l
ibr
ium car
ri
erst
ati
sti
cs)
,Car
ri
ergener
ati
onand
r
ecombi
nat
ion, Car
ri
er t
ranspor
t: di
ff
usi
on and dr
if
t, p-
n j
unct
ion, Met
al-
semi
conduct
orj
unct
ion(
Ohmi
candschot
tky
),Semi
conduct
ormat
eri
alsofi
nter
est
f
oropt
oel
ect
roni
cdev
ices.
UNI
T–I
II(
LIGHT-
SEMI
CONDUCTORI
NTERACTI
ON)
Opt
icalt
ransi
ti
onsi
nbul
ksemi
conduct
ors:absor
pti
on,spont
aneousemi
ssi
on,and
st
imul
ated emi
ssi
on;Joi
ntdensi
ty ofst
ates,Densi
ty ofst
ates f
orphot
ons,
Tr
ansi
ti
onr
ates(
Fer
mi'
sgol
denr
ule)
,Opt
icall
ossandgai
n;Phot
ovol
tai
cef
fect
,
Exci
ton,
Drudemodel
.
UNI
T–I
V(MEASUREMENTS&ENGI
NEEREDSEMI
CONDUCTORMATERI
ALS)
Four
-poi
ntpr
obeandv
anderPauwmeasur
ement
sforcar
ri
erdensi
ty,
resi
sti
vi
ty,
and
hal
lmobi
l
ity
;Hot
-poi
ntpr
obemeasur
ement
,capaci
tance-
vol
tagemeasur
ement
s,
par
amet
erext
ract
ion f
rom di
odeI
-V char
act
eri
sti
cs,DLTS,band gap byUV-
Vis
spect
roscopy
,absor
pti
on/
transmi
ssi
on.Densi
ty of st
ates i
n 2D,1d and 0D
(
qual
i
tat
ivel
y).Pr
act
icalexampl
esofl
ow-
dimensi
onalsy
stemssuchasquant
um
wel
l
s,wi
res,and dot
s:desi
gn,f
abr
icat
ion,and char
act
eri
zat
ion t
echni
ques.
Het
eroj
unct
ionsandassoci
atedband-
diagr
ams.

REFERENCES:

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
6]
1.J.Si
ngh,Semi
conduct
orOpt
oel
ect
roni
cs:Phy
sicsandTechnol
ogy
,McGr
aw-
Hil
l
I
nc.(
1995)
.
2.B.E.A.Sal
ehandM.C.Tei
ch,
Fundament
alsofPhot
oni
cs,
JohnWi
l
ey&Sons,
Inc.
,
(
2007)
.
3.S.M.Sze,
Semi
conduct
orDev
ices:
Phy
sicsandTechnol
ogy
,Wi
l
ey(
2008)
.
4.A.Yar
ivandP.Yeh,Phot
oni
cs:Opt
icalEl
ect
roni
csi
nModer
nCommuni
cat
ions,
Oxf
ord
Uni
ver
sit
yPr
ess,
NewYor
k(2007)
.
5.P.Bhat
tachar
ya,Semi
conduct
orOpt
oel
ect
roni
cDev
ices,Pr
ent
iceHal
lofI
ndi
a
(
1997)
.
6.Onl
i
necour
se:
“Semi
conduct
orOpt
oel
ect
roni
cs”byM RShenoyonNPTEL
7.Onl
i
necour
se:"
Opt
oel
ect
roni
cMat
eri
alsandDev
ices"byMoni
caKat
iyarand
DeepakGupt
aonNPTEL.

EE101C(
BASI
CELECTRI
CALENGI
NEERI
NG)
B. 1StYear
Tech- /1stSem
I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s

UNI
T-1(
D.C.CI
RCUI
TS&THEOREMS)
Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
7]
Basi
csofel
ect
ri
cci
rcui
tel
ement
s,Ki
rchhof
f’
slaws& i
tsappl
i
cat
ionsi
ncl
udi
ng
t
hosebasedondependentsour
ces,
NodalandLoopmet
hodsofAnal
ysi
s,St
ar-
Del
ta
anddel
ta-
start
ransf
ormat
ions.Net
wor
kTheor
ems:Thev
eni
n’
stheor
em,Nor
ton’
s
t
heor
em,
Super
posi
ti
ont
heor
em,
Maxi
mum Powert
ransf
ert
heor
em.
UNI
T-2(
SINGLEA.
C.CI
RCUI
TS)
Si
nusoi
dal
signal
,i
nst
ant
aneous&peakv
alues,
aver
ageandRMSv
alues,
for
mfact
or,
peakf
act
or.ConceptofPhasor
s:Rect
angul
ar&Pol
ar,Tr
igonomet
ri
c&Exponent
ial
f
orms.Behav
iourofR,
L,Ccomponent
sinacci
rcui
ts.Ti
medomai
nanal
ysi
soff
ir
st-
or
derRLandRC ci
rcui
ts.Ser
iesandpar
all
elci
rcui
ts:Act
iveandr
eact
ivepower
,
powerf
act
or,Resonancei
nser
iesandpar
all
elci
rcui
ts.Q-
fact
or,cutof
ffr
equenci
es
andbandwi
dth.Thr
eePhaseCi
rcui
ts:
Phaseandl
i
nev
olt
agesandcur
rent
s,bal
anced
st
aranddel
taci
rcui
ts.
UNI
T-3(
ELECTRI
CALMACHI
NES)
Const
ruct
ion,wor
kingpr
inci
ple,t
ype,&equat
ionofSi
ngl
ephaseTr
ansf
ormer
,Ideal
Tr
ansf
ormer
,Phasordi
agr
amsofSi
ngl
e-phaseTr
ansf
ormeratnol
oadandonl
oad,
Equi
val
entci
rcui
t,l
osses,ef
fi
ciency
.Thr
eephaseTr
ansf
ormerconnect
ions.si
ngl
e
phase
Aut
otr
ansf
ormer
.Rot
ati
ngMachi
nes:
Const
ruct
ion,
oper
ati
ngpr
inci
pleofd.
c.mot
ors
andi
tst
orquespeedchar
act
eri
sti
cs.Const
ruct
ionandwor
kingpr
inci
ple&t
ypeof
si
ngl
ephaseI
nduct
ionmot
or& Thr
ee-
phaseI
nduct
ionmot
or,conceptofsl
i
p&
t
orque-
speedchar
act
eri
sti
cs,
const
ruct
ionandwor
kingofsy
nchr
onousgener
ator
s.
UNI
T-4(
ELECTRI
CALANDELECTRONI
CSCOMPONENTS)
Component
sofLT Swi
tchgear
:Swi
tchFuseUni
t(SFU)
,MCB(Mi
niat
ureCi
rcui
t
Br
eaker
),ELCB(
Ear
th Leakage Ci
rcui
tBr
eaker
),MCCB(Moul
ded Case Ci
rcui
t
Br
eaker
),Ty
pes ofWi
res and Cabl
es,Ear
thi
ng.Ty
pes ofBat
ter
ies,I
mpor
tant
Char
act
eri
sti
cs ofBat
ter
ies.El
ement
ary cal
cul
ati
ons f
orener
gy consumpt
ion.
I
ntr
oduct
iont
opowerf
act
ori
mpr
ovementandbat
ter
ybackup.
TEXTBOOKS:
1.Del
Tor
o,“
Pri
nci
plesofEl
ect
ri
cal
Engi
neer
ing”
,2ndEdi
ti
on,
Pear
sonEducat
ion.
2.D.
P.Kot
har
i&I
.J.Nagar
ath,
“Basi
cEl
ect
ri
cal
Engg”
,TMH,
NewDel
hi,
3rdedi
ti
on.
3.B.L.Ther
aja&A.K.Theraj
a,“El
ectr
icalTechnol
ogy”,
(Vol
-I
,Vol
-I
I)
,S.
Chand.
GatewayInst
it
uteofEngineer
ing&Technol ogy,
GatewayCampus,Sector
-11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
8]
4.Edwar
d Hughes,“
Elect
ri
cal& El
ect
roni
cs Technol
ogy
”,10t
h Edi
ti
on,
Pear
son
Educat
ion.
REFERENCEBOOKS:
1.T.
K.Nagsar
kar&M.
SSukhi
j
a,“
Basi
cEl
ect
ri
cal
Engi
neer
ing”
,OXFORDUni
.
Pr
ess.
2004.
2.L.S.Bobr
ow,
“Fundament
alsofEl
ect
ri
cal
Engi
neer
ing”
,Oxf
ordUni
ver
sit
yPr
ess.
3.D.
C.Kul
shr
esht
ha,
“Basi
cEl
ect
ri
cal
Engi
neer
ing”
,McGr
awHi
l
l.
4.Hay
t&Kemmer
ly,
“Engi
neer
ingCi
rcui
tAnal
ysi
s”,
McGr
awHi
l
l.
5.“
Schaum'
sOut
li
neofEl
ect
ri
cCi
rcui
ts”
,McGr
awHi
l
l.
6.A.
K.Sawhney
.A Cour
se i
n El
ect
roni
c Measur
ement
s and I
nst
rument
ati
on”
,
DhanpatRai
&Co.
7.S.
K.Sahdev
,“Basi
cEl
ect
ri
cal
Engi
neer
ing”Pear
sonEducat
ion.

ME101C(
ENGI
NEERI
NGGRAPHI
CSANDDESI
GN)
B. 1StYear
Tech- /1stSem
I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s

1.
INTRODUCTI
ONTOENGI
NEERI
NGDRAWI
NG
Pr
inci
plesofEngi
neer
ingGr
aphi
csandt
hei
rsi
gni
fi
cance,
usageofDr
awi
ngi
nst
rument
s,
l
ett
eri
ng,Coni
csect
ionsi
ncl
udi
ngt
heRect
angul
arHy
per
bol
a(Gener
almet
hodonl
y);

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
9]
Cy
cloi
d,Epi
cycl
oid,Hy
pocy
cloi
d and I
nvol
ute;Scal
es– Pl
ain,Di
agonaland Ver
nier
Scal
es.
2.ORTHOGRAPHI
CPROJECTI
ONS
Pr
inci
plesofOr
thogr
aphi
cPr
oject
ions-
Conv
ent
ions-Pr
oject
ionsofPoi
ntsandl
i
nes
i
ncl
i
nedt
obot
hpl
anes;
Proj
ect
ionsofpl
anesi
ncl
i
nedPl
anes–Auxi
l
iar
yPl
anes.
3.PROJECTI
ONSOFREGULARSOLI
DS
t
hosei
ncl
i
nedt
obot
hthePl
anes-Auxi
l
iar
yVi
ews;
Drawsi
mpl
eannot
ati
on,
dimensi
oni
ng
andscal
e.Fl
oorpl
anst
hati
ncl
ude:wi
ndows,
door
s,andf
ixt
uressuchasWC,
bat
h,si
nk,
shower
,et
c.
4.SECTI
ONSANDSECTI
ONALVI
EWSOFRI
GHTANGULARSOLI
DS
Pr
ism,Cy
li
nder
,Py
rami
d,Cone– Auxi
l
iar
yVi
ews;Dev
elopmentofsur
facesofRi
ght
Regul
arSol
i
ds-Pr
ism,Py
rami
d,Cy
li
nderandCone;Dr
aw t
hesect
ionalor
thogr
aphi
c
v
iewsofgeomet
ri
calsol
i
ds,obj
ect
sfr
om i
ndust
ryanddwel
l
ings(
foundat
iont
osl
ab
onl
y).
5.I
SOMETRI
CPROJECTI
ONSCOVERI
NG
Pr
inci
plesofI
somet
ri
cpr
oject
ion – I
somet
ri
cScal
e,I
somet
ri
cVi
ews,Conv
ent
ions;
I
somet
ri
cVi
ewsofl
i
nes,Pl
anes,Si
mpl
eandcompoundSol
i
ds;Conv
ersi
onofI
somet
ri
c
Vi
ewst
oOr
thogr
aphi
cVi
ewsandVi
ce-
ver
sa,
Conv
ent
ions.
6.
OVERVI
EW OFCOMPUTERGRAPHI
CS
Li
sti
ng t
he comput
er t
echnol
ogi
es t
hati
mpacton gr
aphi
calcommuni
cat
ion,
Demonst
rat
ingknowl
edgeoft
het
heor
yofCADsof
twar
e[suchas:
TheMenuSy
stem,
Tool
bar
s(St
andar
d,Obj
ectPr
oper
ti
es,Dr
aw,Modi
fyandDi
mensi
on)
,Dr
awi
ngAr
ea
(
Backgr
ound,Cr
osshai
rs,Coor
dinat
eSy
stem)
,Di
alogboxesandwi
ndows,Shor
tcut
menus (
But
ton Bar
s),The Command Li
ne (
wher
e appl
i
cabl
e),The St
atus Bar
,
Di
ff
erentmet
hodsofzoom asusedi
nCAD,Sel
ectander
aseobj
ect
s,I
somet
ri
c
Vi
ewsofl
i
nes,
Planes,
Simpl
eandcompoundSol
i
ds.
7.CUSTOMI
SATI
ON&CADDRAWI
NG
Consi
sti
ngofsetupoft
hedr
awi
ngpageandt
hepr
int
er,i
ncl
udi
ngscal
eset
ti
ngs,
Set
ti
ng upofuni
tsand dr
awi
ngl
i
mit
s;I
SO and ANSIst
andar
dsf
orcoor
dinat
e
di
mensi
oni
ngandt
oler
anci
ng;Or
thogr
aphi
cconst
rai
nts,Snapt
oobj
ect
smanual
l
y
and aut
omat
ical
l
y;Pr
oduci
ng dr
awi
ngs byusi
ng v
ari
ous coor
dinat
einputent
ry
Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
10]
met
hodst
odr
awst
rai
ghtl
i
nes,
Appl
yi
ngv
ari
ousway
sofdr
awi
ngci
rcl
es.
8.ANNOTATI
ONS,
LAYERI
NG&OTHERFUNCTI
ONS
Appl
yi
ngdi
mensi
onst
oobj
ect
s,appl
yi
ngannot
ati
onst
odr
awi
ngs;Set
ti
ngupand
useofLay
ers,l
ayer
stocr
eat
edr
awi
ngs,Cr
eat
e,edi
tandusecust
omi
zedl
ayer
s;
Changi
ngl
i
nel
engt
hst
hroughmodi
fyi
ngexi
sti
ngl
i
nes(
ext
end/
lengt
hen)
;Pr
int
ing
document
stopaperusi
ngt
hepr
intcommand;or
thogr
aphi
cpr
oject
iont
echni
ques;
Dr
awi
ngsect
ionalv
iewsofcomposi
ter
ightr
egul
argeomet
ri
csol
i
dsandpr
ojectt
he
t
rueshapeoft
hesect
ionedsur
face;Dr
awi
ngannot
ati
on,Comput
er-
aideddesi
gn
(
CAD)sof
twar
emodel
i
ngofpar
tsandassembl
i
es.
Par
amet
ri
candnon-
par
amet
ri
c
sol
i
d, sur
face, and wi
ref
rame model
s. Par
t edi
ti
ng and t
wo di
mensi
onal
document
ati
on of model
s. Pl
anar pr
oject
ion t
heor
y,i
ncl
udi
ng sket
chi
ng of
per
spect
ive,i
somet
ri
c,mul
ti
vi
ew,auxi
l
iar
y,andsect
ionv
iews.Spat
ialv
isual
i
zat
ion
exer
cises.Di
mensi
oni
nggui
del
i
nes,t
oler
anci
ngt
echni
ques;di
mensi
oni
ngandscal
e
mul
tiv
iewsofdwel
l
ing.
9.DEMONSTRATI
ONOFASI
MPLETEAM DESI
GNPROJECT
I
til
l
ust
rat
es Geomet
ry and t
opol
ogy ofengi
neer
ed component
s:cr
eat
ion of
engi
neer
ing
model
sandt
hei
rpr
esent
ati
oni
nst
andar
d2Dbl
uepr
intf
orm andas3Dwi
re-
fr
ame
and shaded sol
i
ds;meshed t
opol
ogi
es f
orengi
neer
ing anal
ysi
s and t
ool
-pat
h
gener
ati
onf
orcomponentmanuf
act
ure;geomet
ri
cdi
mensi
oni
ngandt
oler
anci
ng;
Useofsol
i
d-model
i
ngsof
twar
eforcr
eat
ingassoci
ati
vemodel
satt
hecomponent
andassembl
ylev
els;f
loorpl
anst
hati
ncl
ude:wi
ndows,door
s,andf
ixt
uressuchas
WC,bat
h,si
nk,shower
,et
c.Appl
yi
ngcol
ourcodi
ngaccor
dingt
obui
l
dingdr
awi
ng
pr
act
ice;Dr
awi
ngsect
ionalel
evat
ionshowi
ngf
oundat
iont
ocei
l
ing;I
ntr
oduct
iont
o
Bui
l
dingI
nfor
mat
ionModel
l
ing(
BIM)
.
TEXTBOOKS
S.
No. Tit
le Author(
s) Publ
isher
1 Engineer
ingDr
awi
ng BhattN.D.
,Panchal Char
otar
V.M.&IngleP.R.
Publ
i
shin
g House

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
11]
2 Engi
neeri
ngDrawingand Shah,
M.B.&Rana Pearson
ComputerGr
aphics B.C. Educati
on

REFERENCEBOOKS
S.
No. Tit
le Aut
hor(s) Publ
isher
1 Engineer
ingGr
aphi
cs AgrawalB.&Agr
awal TMH
C.M.
Publ
i
cati
on
2 CADSof
twar
eTheor
yandUserManuals

HUM 103C(
ENGLI
SHLANGUAGELAB)
B. 1StYear
Tech- /1stSem
I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s
COURSECONTENTS
(
i)Li
steni
ngcompr
ehensi
on
(
ii
)Recogni
ti
onofphonemesi
nInt
ernat
ional
Phonet
icAl
phabet

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
12]
(
ii
i)Sel
fint
roduct
ionandi
ntr
oduct
ionofanot
herper
son
(
iv)Conv
ersat
ionanddi
aloguesi
ncommonev
ery
daysi
tuat
ions
(
iv)Communi
cat
ionatwor
kpl
ace(
Standar
dphr
asesandsent
encesi
nvar
ious
si
tuat
ions)
(
vi)Tel
ephoni
ccommuni
cat
ion
(
vii
)Speechesf
orspeci
aloccasi
ons(
Wel
comespeeches,
Int
roduct
ionspeeches,
Fel
i
cit
ati
onspeechesandFar
ewel
lspeeches)
(
vii
i
)TagQuest
ions
(
ix)For
mal
Present
ati
onsonl
i
ter
aryt
ext
spr
escr
ibedi
ntheor
ypaper
RECOMMENDEDREADI
NGS:
1.Bhat
nagar
,Ni
ti
nandMamt
aBhat .Communi
nagar cat
iveEngl
i
shf
orEngi
neer
sand
Pr
ofessi
onal
s.Pear
sonEducat
ion,
2013.
2.Swan,
Mi .Pr
chael act
icalEngl
i
shUsage.OUP,
1995.
3.Gangal
, K.Pr
J. act
icalCour
sei
nSpokenEngl
i
sh.NewDel
hi:
PHILear
ning,
2015.
4.Konar
,Ni
ra.Communi
cat
ionSki
l
lsf
orPr
ofessi
onal
s.NewDel
hi:PHILear
ningPv
t.
Lt
d.,
2009.
5.Bansal
,R.
K.andJ.
B.Har
rson.SpokenEngl
i i
sh.Or
ientLongman,
1983.
6.Shar
ma,Sangeet
aandBi
nodMi a.Communi
shr cat
ionSki
l
lsf
orEngi
neer
sand
Sci
ent
ist
s.Del
hi:
PHILear
ningPv
t.Lt
d.,
2015.

PHY119C(
SEMI
CONDUCTORPHYSI
CSLAB)
B. 1StYear
Tech- /1stSem
I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s

LI
STOFEXPERI
MENTS:

1.Tost
udyt
hef
orwar
dandr
ever
sechar
act
eri
sti
csofP-
Njunct
iondi
ode.
2.Tost
udyt
hechar
act
eri
sti
csoft
ransi
stori
ncommonbaseconf
igur
ati
on.

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
13]
3.Tost
udyt
hechar
act
eri
sti
csoft
ransi
stori
ncommonemi
tt
erconf
igur
ati
on.
4.Tost
udyt
hechar
act
eri
sti
csofJunct
ionf
iel
def
fect(
JFET)t
ransi
stor
.
5.Tost
udyt
hechar
act
eri
sti
csofMet
aloxi
desemi
conduct
orf
iel
def
fect(
MOSFET)
t
ransi
stor
.
6.Tost
udyt
hechar
act
eri
sti
csofSol
arcel
landf
indoutt
hef
il
lfact
or.
7.Todesi
gnandst
udyAct
iveandPassi
vef
il
ter
s.
8.Tost
udyt
her
ever
sechar
act
eri
sti
csofZenerdi
odeandv
olt
ager
egul
ati
onusi
ng
ZenerDi
ode.
9.Todet
ermi
nePl
anksconst
antusi
ngphot
ocel
l
.
10.Tomeasur
ee/
m ofel
ect
ronusi
nghel
i
cal
met
hod.
11.Tof
indcapaci
tanceofcondenserusi
ngf
leshi
ngandquenchi
ngexper
iment
.
12.Tof
indt
emper
atur
eco-
eff
ici
entofpl
ati
num usi
ngCal
l
enderGr
if
fi
thbr
idge.
13.Tof
indoutl
owr
esi
stancebyCar
ryFost
erbr
idge.
14.Tof
indr
esi
stanceofgal
vanomet
erbypostof
fi
cebox.
15.Tocompar
ethecapaci
tanceoft
wocapaci
tor
susi
ngDe‘
Saut
yBr
idge.

EE105C(
BASI
CELECTRI
CALENGI
NEERI
NGLAB)
B. 1StYear
Tech- /1stSem
I
nternal
Marks-25
ExternalMar
ks-75
Durati
onofExam–3hour
s

LI
STOFEXPERI
MENTS:

1.Tost
udyf
requencyr
esponseofaser
iesR-
L-Cci
rcui
tanddet
ermi
ner
esonant
f
requency&Q-
fact
orsf
orv
ari
ousVal
uesofR,
L,C.

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
14]
2.Tost
udyf
requencyr
esponseofapar
all
elR-
L-Cci
rcui
tanddet
ermi
ner
esonant
f
requency&Q-
Fact
orsf
orv
ari
ousv
aluesofR,
L,C.
3.Toper
for
m Openci
rcui
t&Shor
tci
rcui
tTest
sonsi
ngl
ephaseTr
ansf
ormer
.
4.Topl
ott
orque-speedchar
act
eri
sti
cofsepar
atel
yexci
tedDCmot
or.
5.Demonst
rat
ionofaDC-
DCconv
ert
orandDCt
oACConv
ert
orandal
sodr
awPWM
wav
efor
m.
6.Speedcont
rol
ofi
nduct
ionmot
orusi
ngDC-
ACconv
ert
or.
7.Demonst
rat
ionofComponent
sofLTswi
tchgearl
i
keMCB,
MCCB,
SFU,
ELCBand
ear
thi
ng.
8.Toobt
aint
orque-
sli
pchar
act
eri
sti
csoft
hreephasei
nduct
ionmot
or.
9.Toper
for
mvol
tagecont
rol
ofsy
nchr
onousgener
atort
hroughf
iel
dexci
tat
ion.
10.Tost
udyt
ransi
entandst
eadyst
atet
imer
esponseofRLCser
iesci
rcui
ts.

MC101C(
INDUCTI
ONPROGRAM)
B. 1StYear
Tech- /1stSem
I
nter
nal
Marks-25
Exter
nalMarks-75
Dur
ati
onofExam–1. 5hour
s
Cour
seCur
ri
cul
um:
1. Eachstudenthastopartici
pateint hemandat oryAudit(Non-
credit
)Course
I
NDUCTI ONPROGRAM of21day s.
2. Outofthese21days,i
nit
ial07workingday sdurati
onshallbededicat
edsol
ely
totheI
nducti
onProgr
am beforethestartofregul
arteachi
ngoffi
rstsemest
er.

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
15]
3. Ther emai ningt woweeks( 14wor kingday s)wi llbespr eadov ert her estoff irst
semest erbyal l
ot ting6per iodsperweek( pr efer abl y2per i
odseachonTues. ,
Wed.&Thur s. ),howev er ,t heseper iodsshal lnecessar i
lybei nt hesamesl ot s
foral lengi neer ingdi scipl ines/br anchessot hati facommonact ivityi st obe
planned, thesamemaybeef fected/act ual izedatt heUni v./I nstitut elev el.
4. I nduct i
onPr ogr am compr isesof :
a)Phy si cal Act iv i
ties,
b)Cr eat i
v eAr t s,
c)Ment or ingAndUni ver sal HumanVal ues( UHVs) ,
d)Li ter ar yAct ivities,
e)Pr of iciencyModul es,
f) Lect ur esAndWor kshopsbyEmi nentPeopl e,
g)Vi si tst ol ocal Ar eas,
h)Fami liarizat ionWi thRespect iveDept ./Br anch&I nstitute,
i
) Co- Cur ricul arAct i
vitiesi nUni v./Col lege.
5. Each st udentwi l
lmai nt ain a Di ar yt oj otdown sal ientpoi nts & scr i
bbl e
associ at edpoi nt sl estt hesemaywi ther&waneawayf rom memor y ,because
eachst udenthast ocl earanObj ectiveTy peTestatt heendoft hi
sAudi tCour se.
6. Al so, st udent smaykeepr ecor dingt hei rf eedback/r ating, onascal eof1t o10,
ofeachspeaker /sessi on/act i
v i
tyi nt hei rdi ar y,t or eproducet hesamei n
feedbacksessi on.TheMent orsofr esp.gr oups&Act ivityI n-char gesshal lf r
om
timet ot imesi gnont hesedi ari
est omoni torpr ogr ess&at tendance.
7. I tisexpect edt hatst udent s,whi lecomi ngont ospor tsar enas,wi l
lcomei n
properspor tsat ti
re( spor tsshoes,et c.).Theymayal socar ry,inabag/car r y
-
bag, thei rf or mal dr essf orsubsequentsessi ons.
8. EachUni ver salHumanVal ues( U.H. V.)Di scussi onGr oupshal lconsi stof20
Student s+2Seni orSt udentGui des+1Facul tyMent or.
9. Venue & Schedul e:Forcost -ef fect i
veness,t he Venue f ort he Lect ures,
Prof iciencyModul es,& commonact ivit
ies,et c.maybekeptasConv ention
Cent r e/Audi tor i
um oft heUni v.
/r esp.I nst i
tut e.Thev enuef ordept .
-speci fic
act i
v i
t i
es maybe deci ded byChai rpersons ofr esp.Dept s.of fering t hese
modul es.
10. Wake- upcal lf orhost ellersshal lbef rom 6: 30a. m. -7:00a. m.andt heyshal l
per for m Phy sicalAct ivitiesf rom 7: 00a. m.t o8: 00a. m.i nt hemor ningandal so
for1houri nt heev eni ngoneachwor kingday .I ftheschedul eofPhy sical
Act i
v itiesf orhost eler scannotbef ollowedwi thr igorbyal lday -
schol ar s,t hena
separ at eschedul ef ort hesamemaybesui tabl ywor kedoutbyt heUni v./r esp.
Institut e.
11. Ev aluat i
onScheme:
a)TheI nt er nalAssessment/Sessi onal/Cl ass- wor kMar ksshal lbeawar ded
for25 mar ksbyt hement or( f
oreach gr oup ofabout20 st udent sof
respect i
v ebr anch/di sci pl i
ne)basedoncandi dat e’sr egul ari
ty ,at tendance,
diar ywor k,assi gnment s&ent husi ast icpar ticipat ioni nv ariousact ivi
t i
esof
theI nduct i
onPr ogr am.Thesemar ksshal lbecol lected( from eachoft he
ment or sofagr oupofabout20st udent sofr esp.br anch)byt heseni or-most
ment or( orbyt heCl assI n-char geof1st Yearoft heconcer nedbr anch/
disci pline,asdeci dedbyUni v./concer nedI nst i
tute)whomayupl oadt he
Gat ewayI nst ituteofEngi neer i
ng&Technol ogy , Gat ewayCampus, Sect or -
11,
Soni pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
16]
 Sessional /I nternal Assessment/Cl ass- wor kMar ksont heUni v .por tal.
b)Ther ewi l
lbeanend- semest erexami nat i
onof75mar ksbasedonsel ect ed
chapt ersoft heTextBooks/Ref erences,andt heB. Tech.Or dinanceoft he
Univ.,andont helifeandachi ev ement sofSt ate&Nat i
onal Her oes.
c)Anyst udentf aili
ngi nt heSessi onal/Cl ass-wor k/I nternalAssessmentand
/ori nt heend- semest erexami nat ionofI nduct i
onPr ogram shal lhav et o
reappearandpassasperpr ov isionsoft heB. Tech.Or dinance.
12. Anyst udentf aili
ngoft heI nduct ionPr ogr am shal lhav et oPr epar ingf ort he
Conductoft hePr ogram:
a)Uni v./ Each I nstitute may appoi nta Facul tyi n-char ge cal l
ed Chi ef
Coor dinat or,Induct ionPr ogr am, whoshal lpr epar etheSchedul eof1stWeek
&shal lber esponsi ble,alongwi t
hhi st eam ( whi chshal lnecessar i
lyinclude
Facult yMent orsdef inedi nt hispar agr aph,besi desot hermember s),f orits
execut ion. Fur ther,eachDept .mayappoi ntoneFacul tyMent orf oreach
groupof20f i
rsty earst udent sofeachbr anch.Theseni or-mostamongst
suchFacul tyMent or sofaDept ./br anch( ort heCl assI n-char geof1sty ear
ofr espect i
v ebr anch)shal l,inassoci ationwi t
hot herment or(s) ,ifany ,of
respect ivebr anchshal lprepar e,wi thint heov erallmandat eoft heI nduct ion
Progr am,t heSchedul ef ort her estoft heSemest er&shal lber esponsi ble
foritsexecut ion&al sof orI nter nalAssessment /Class- wor kMar ksawar d
and upl oad.The Chi ef Coor di nator may hol d meet i
ngs of ment ors
periodical l
y .
b)Tr aining pr ogr am( s)f orChi efCoor dinator& f aculty ment ors may be
conduct edbyUni v./r esp.Inst i
tut eonhow t oment orst udent sbasedon
universal humanv alues, &impar ti
nghol i
sticeducat i
on&l argerv isionofl ife.

TextBooks/Ref
erences:
1. Dr.J.S.Sai ni,“APi thyGui def orI nductionPr ogr am” ,InternalReport,DCRUST,
Mur t
hal ,Sonipat( Haryana) ,2019.
2. RajeevSangal ,Gaut am Bi swas,Ti mot hyGonsal ves,PushpakBhat tachar ya,
“MotivatingUGSt udent sTowar dsSt udies”,IITDi rector’
sSecr etari
at,IIT,Del hi
,
2016.
3. “AGui det oInduct i
onPr ogr am” ,ModelCur ricul um f orUnder graduateDegr ee
Coursesi nEngineer i
ng&Technol ogy, vol.
-1,Jan.2018.
4. “A Det ail
edGui deonSt udentI nduct i
onPr ogr am’ ,AICTE,VasantKunj ,New
Delhi,
Jul y30, 2018.
5. R.R.Gaur ,R.Sangal ,G.P.Bagar ia,“AFoundat ionCour sei nHumanVal ues&
Professional Ethics”,Pub.: Excel Books.
6. Chapter s1,2,3&17ofJosephMur phy,“ ThePowerofYourSub- Consci ous
Mind”,Samai r
a Book Publ ishers,Ghazi abad,U. P.I ndia( also avai l
able at
www. ichooset oheal.com) .
7. Dr.SpencerJohnson, “WhoMov edMyCheese” , Ver mill
i
onPr ess.
8. Dr.BirenderHooda,“ Gener alWar m UpExer ciseSt ructureAndCar diov ascular
Fit
nessThr eshol dofTr aini ng&Tar getZonesf orAer obicExer ci
se” ,Internal
Report, DCRUST, Mur thal,2018.
9. Dr.J.S.Sai ni,“Readi ng t heMi nd and Joggi ng t he Br ai
n( A Compi lati
on) ”
,

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
17]
 I
nternalReport
,DCRUniv
.ofSci
.&Tech.,
2019.
10. Dr.J.S.Sai
ni,
“Heal
thSy
stem”,I
nter
nal
Report
,DCRUni
v.ofSci
.&Tech.
,2019.

NOTES:
1. Fort hesemest erexami nation,75Object
iveTypeQuest ionsar etobesetby
theexami ner,tobeanswer edin1.5hoursbyt heexami nees.Eachquest i
on
shallcar r
y1mar k;ther
eshal lbenonegati
vemar ki
ng.Thequest i
onsshallbe
setbasedont hecl ause11( b).
2. Thest udentswi llbeallowedt ousenon-
programmabl escientifi
ccalcul
ator.
Howev er,pr ogrammabl e calcul
ator
s,mobile phones orot herelectr
ical
/
electronicitems, andshari
ng/ex- changeofcal cul
ator
sar eprohibi
tedinthe
exami nation.

Gat
ewayI
nst
it
uteofEngi
neer
ing&Technol
ogy
,Gat
ewayCampus,
Sect
or-
11,
Soni
pat
(
Affi
l
iat
edt
oHar
yanaSt
ateGov
t.Uni
ver
sit
y,DCRUSTMur
thal,
Accr
edi
ted‘
A’Gr
adeby
NAAC)
[
18]