FET g MUSFET 0 ot FET: . ~ The bipolay -hencicler (837) wort oy lw Keven op oege hed cleckme curd hole. soit is called or bipolar, ine predey bi! aiiee ef stin ds fey “Yuro" Aucder devite o@ demsithy called tye thos dy pe 94 decice is umipoler beeanre rk operstrm deperr onty ome type a Chevys, ithe free tleckmt or holes, tn other winds , om FET hen majevhy carrion bud val mrinutihy Comrie. Aetad ¢Heet tensrster FET) tevred meet op tre applicakey uyr is PET" nut Somme Sree’ Th Legh Tp imecderce Gpilrcedsan FETT ‘prefered be cure % Funthermere the FET To dhe preferred deuce fer most Sutelong appl coder”, wluy ) Becarte llere are tee no majniy chege cama ian om FET, M4 crest PH CO Seth of farter'’since no shoved cherya han to fre vemoved from te jucctrn oma? ret is a dhe deri nal Sascarducty device . Th operahm controled Fle veltege - where a BIT a i based Mr & - if elp va depron ™ wled in He cunt edrolled device Dip ciqnal. Tw ly pes 4, FETs ore ov otheb le quekon held edlect density (JFET) 2) meta) oxide Seri carductey, FET (mocre tT) Further there Clo fed an > nk channel eeT — eet Enhmcemet type MOCF ET moseet ——] > bepledsm type MosFET Scanned with CamScannerSefructure ond Symabo| Dvein lo) Ip nechannel Gate, ] aT! + peplelen rep ostolg)V45 Source () 4) n-channel structive ») Symooly Do a D 4 4 3 $ b) P-channel. ay n-channel > Gote- By veing dittusion declique . both Sido oy Mt type bay ave heavily deped to eveate PM jwreton, These doping vegan ove called oo Gate (a). Drain — This the fed point te majority conien trregh whrih they leave the Semtenducter bar. Endoy Source TH te the “Set pring for majority carriers throu lech They wt into the Semiemducter bar. Scanned with CamScannerMosFET (mele) oxide FET). Moshe T FET have o few disvatugea lire bigh dyain reishuree, medasate lip juapr deuce ond slower operehon . To owscome tere dit Advoduge . Jhe mosFET which is an advatced FET invited > have of meeeen > which has bgh Tp Pmpedace > ” . n Higy suiteling Speed > veknadm 2 Medal ofide silicon etd cM ect drensister commauty kyo an mosFET are alettemic device used to Swileh ae anelity curved i7 civask rs thyee Jominal This a witege coudrtled device ae dence ig, Meat, cre 4g Source —> Typo mos FeT's a _—— Jedon TYPE ) deple a) Peehanne! ne ehanne! >» Enhencernerd “40% a) Pechannel b) n-channel > Symeb | D D ) Depleko dy pe- pepe a 4 a (oe Ss s 4) n-channel 5) P-channet- Scanned with CamScannerD Eohoncemey type »- D ae AS o— 9) n~ chamnet 5) Pechanvel . Depletion type mosrer —____. Comm) aonstrucken = y So, = Channel — N baste emshuctm ey the n-channel on) depletim type mosFeT ig proaded ia 43. PF Patype Slabs nantetal is famed Suleshede, hema Silrem bare anc is vetrred on the Susostrady, OTS the fomdatey opm whey dre deice is tenstucted, $ DP In some Caer substade rt internally (source) tormected to He Source tovminel Wowerey mony discrete device provide om addi Kea) terminal (atetled ar $5} rebuting in a dour deminal device. > the Source ond dram domivelt ove connected dinrayh mefrbic cadact fo 9- dopecd regions Lured by n-channel ao shown iM to. De gale Bs connected Ao og metal condacl Surface bud vematny jatuleked fom tre mchamet by a vou diy Silieey dioxide (Soy) layer D> Slog Sete 1S a type ef intnleter aeforred an® dielefire fred Sehr UP apposing elechse held witty Ale dielecme wlan cxprsed ty om Cthemrelly applred fete! Scanned with CamScannerreper 4 SiO, lager @ Ho tnee ts ho divect elechien! conneckog blw the gate tewmat ond Ihe Clan el % MOSFET. ited laste ap cio 2 F Pruds bagh IT] p iwape dace oR fie device. > ThE in enledng, leper blo te ate G Clonmnet hen reselicd 34 Wolter name dy he dwite: inculated gots FET o LGFET Operedtion 5. Sub stele Vug ne fe woot AAG 2S pol an : Elettrnus repelled 8 bp ore poleddnt aby = Pi oO zy 9 44 ‘the gele source Veltone (is) Pe Gels fo pero VUIs boy ne diveet 3 ln comme tom age fervival tv fhe alter, ond a "4 “ps 7s applreed acm drain-to - source Perrine. polewtas of tre drain by fe ie thet, “aateretin tr tre a eurcent 1S esdeblise df dorourt | > The vest Pree elects of the dee clawmel . cu yp gource. fr Vig 20v Ploumy dam drow to curcrt Sheds n-eloumel > New Scanned with CamScanner> £0 Oo Veg har been Set ota ae w ‘ a) ie Ada, Sul e7 ig Vag2 av, anh’ 8 D> Tre -ve v4 of gate terme 3 t 4 vel will oppose a presune @lechors dyward the p~ Ke P-type Sumttrte. and cHaaets holes from. de C~tupe ; Substrate, a Shom QO. Depending @ open Wee magrhade of the megakre bia eslablithe J by Mis) a debet Level af reconbiiedsey Gio elechaes § boler well octar Ataf ill reduce the number Of) thee electrons 7h nechoned avoslable fer conductor - tte rake of reconabiredson ~> more negacbine Ahe bien, tre be ham tre dram ty Source. ole, reduce te curcod tlow > Paghey the me volhagg lower the electra in ebourel (ir, of dower hetome namo) due to tes dram cured wll relives > & apply are volleys ot gate Sp dram curred wal veduce Te O/p turret Lo cm) 10-4 Depledsm medS— Magi Mype0¥ Yager Scanned with CamScanner= chame! En heucemed 4 pe mosFer @ enn neaee nedep Cs truck, Sey etal —e" Cnstueten Is Same ey meal lic eee the ne - ian | nechanel deplekey yo 9 Substrabs nie deped ss Exee, aan pt be chennel 1 Alo channel 7 presed 14 Cnharcenred Ayre MOSFET. rye 440 opesekey ». > EL Vus iS seh ad f Mus eV and a veltuge applied Se Mme drain gad Source a dhe device Af fy, ne absence yan n-channel wil! recubt in no cunt bho cain fo Source, Hf wher Vas=e¥, Vogis tHe YG Tlss is Gecane the VgssoV due fo thas dheiy iL ne odtyack re force dree to adjvact ¥ electron» from pe subeterde new the Gate blo heaus deped dram #9 Source due fy His no Chowmsel Ticcceaded Bo cham to Sourte SO Lpro > in befor below tq both Vos ord Vug ave Set af some -tve Volle thon OV, ie og 2 Mp7 OV thee potekal wt yopett 19 green ic uohere Gate and dross ave te pes! sourle > Te + podenkal oF tue gate will pressure Phe holes in p- subs babe along the edge fixe S109, Layer fo leave dre avea ond eer deeper egies Ly P -Subsbat=, No Space The weet 16 depledon regan ner te Sion layer Te emery oy holes canned with CamScannerin the Pe sulscbrade Cnc are clege-corritas) WIM bbe uHerveutcd > Ele ef fo tre tre gate and accomlate in tle reg5y ner ke fhe Surtace — |V % the $102 lager, ‘ 4) prevent > The Sid, lay and ih inialedey proper quabdes wt due -re carrie fary beivg absey! —D ths use Vig increcrse its Mude, dhe coneeteadson op Cleetrnn ce inertayy unkil induced M—Aype wegiey eon Suppirt tre How oy curnrect fo saan § souree Cie, channel yer Sion surde > level og Me whe yetnlh ty drain Current ts called “Atreshold vltage' and the’ Vy! is the syonool Gren, Since chumel ts Honexrishedt with Vqc=oV and “erhorced ” by the applicaben oy a +8 gated - Source voltege | 6 catled om enhoucemet ype MosFeT Electone allavacted +o awe gate Cinduced n-chowrel) dis fype MosPEeT S Holes yepelled by tre gate. Scanned with CamScannerMOSFET Choracterskee TT «ay qui « @ gm (ON MOSFET if Seem ty Ext: bifg Three open eon cotalt epi : eustoff ogre 1S a regren dheve will be no Cured dlew dhwugh i. Lin dict region, MOSFET behaves Live oy ep Suite, ond IS dhs ysed whey try are mequred 40 dumeton oy elechmic Sutter. vm ubeh dhe motCET Will be OFF an Ohmic Eger eqren:- dhe wort ‘Log inten ohmic on Uyery regime 3S a Texte whore in wlth a inevemne in the valne op Yes: wohey MOSFET are made +o operate dirs veytm drag ton be ured 0 oplibrs Saduvocen vege i inspite T'S have theiv Los trated inceeds due value in diss reat, dhe mosh oom inereme In Yos oad ects ence Vos ea thea ae gene dois candifirn, tye device will act live sa elesed Sete “Homage wins a tateated value Tos Hows. fs sult, tas operating im ie chosen whenver MOSFET S are a vesult, vequered do prtrm Suitehry 0 perakas moseET Lows ie ge . sf nch- of Delehannel Enhoncemedd «tyre MO z \ hen Fe Set Locem®) Vass yn vols cake ot em. wl pal prein ehevadloathe Fb ahah don cecal Tronstoy, chera.dishe Scanned with CamScannerFig © shows the hontter choracterithes oy n-chowme/ Enheutemat— type MOSFET From tis Mik Cet food the current dirough the device will be zero urd tre Vas Mr Ctmneshold woldoye). Tue ts be case arder dics Stade y tee device will no ebames wich will be comectug the drath end tre Source fernalt Wrecalt in no curved How ¢ show by Ag). aude FES condttie, even om inaeare in Voc O18 indicedkd by tne comerpending elp ehevacleiske Ps yest fea stole repress weting bev the coool TG MOSFET “operat ineveaae with on ede rmined even the Next, once Msp, tre curred dave te duice “ inereene in Los infally ard they saturate) do value by the Ves (Sarbereckm veysen of operaksen) increas, sahuvato curved Hloving finorgh the device 6 Tes is evidet by ke @ where Bosca is F ao Vase 7 Vasa. ctosca TS qreney then oss oad so bert. further Fry (B) also shows doe locus pinch-off vo eae from w~erh Vp is Seem fo increme wity ie ar Mis bo merase. dum Lossa vasg 7 Vasa « $0 07 Inaeae Yh Vas MOSFET 00 a Switch :- pea v Vpp 4 +Vop cole Rp rede p 6 Laue sb pave RG 6 vt 7 Yn oY s Ri Me ov = 5 ich lop @ most Switeh O mostet vsed Su Scanned with CamScanneroo . © # She ee wea Stuagls cet Ulich ser aim n-cbourel wnhoucont SPer ; con ie 4 swith, Here de drain temsval (0) 4 the tne mosFeT vs ‘onncete as the soppy voltage ey yin dream vreritente Rp wkile Ks Soares ean 1S grouded. Purttey han ian bape vo [toge Vin apple d ob Ib ermminal CG) bile Budpet Vo 1s brain frm He drei Now, when Vin > ov MoS PET 7S unbieved, an a veéult tye mosFET will be OFF and operates in is ontop rege whocin it ojfas ot qn jurpederee paby fo the flow % currant, whuh males dre Los almost eqevalet to revo vol lege avian Rp 20V ad ofp why Vo2Vbp - Naw—rten Vag7Y YS POT poh Vase Vy om Ave detes star} fo cadact ond 1] the vp the device, then dhe mocret Sits frm tre above diseumty dependry vohenttor tte Und ft carding The MOCFET wil) Vays prided renter ton pinch off ve Urge fo operate in Tis Sadeeachim ph is evdet thed tree Ip 19 alters 4 [wo Ngn 4 2 fp pavided iS lew oon Oe greet #) dee Ny reopecbvely , TH) inde to fob 07 Sul M can conclude Prod MosFET con be teher Scanned with CamScanner) MosPeT Rakugs sdeady stole operabyy Lt tr am : couplctly on eh sefe indo arent soi). Toe fallbaieg Loe Vpgs t— TES 18 the drain —souree byemn dew wltoge gyceediva, tes » IK ove ve unwally specshed srt ove uavelly Seca wil) destroy dine deuier duce bo avalanche brent down Af tor body drain pom jwactsrg Tost This is the maximum carrent that should not be exceeded even under pulsed current operating condition in order to avoid permanent damage to the bonding wires. 3) Continuous and Pulsed power dissipation limits: They indicate the maxi allowable value of the Vos, ip product for the pulse durations shown against each limit Exceeding these limits will cause the junction temperature to rise beyond the acceptable simi All safe operating area Limits are specified at a given case temperature. In addition, several important parameters regarding the dynamic performance of the device are also specified. These are 4) Gate threshold voltage (Vos (th)): The MOSFET remains in the cut off region when vas in below this voltage. Vos (th) decreases with junction temperature. 3) Drain Source on state resistance (ros (ON)): This is the slope of the in = vos characteristics in the ohmic region. Its value decreases with increasing vas and increases with junction temperature. Fos (ON) determines the ON state power loss in the device. €) Forward Transconductance (gu) It isthe ratio of ip and (Vas ~ vos(th). Ina MOSFET switching circuit it determines the clamping voltage level of the gate — source voltage and thus influences dyps/dt during turn on and turn off. 3) Gate-Source breakdown voltage: Exceeding this limit will destroy the gate structure of the MOSFET due to dielectric break down of the gate oxide layer. It should be noted that this limit may by exceeded even by static charge deposition. Therefore, special precaution should be taken while handing MOSFETs. §) Input, output and reverse transfer capacitances (Ces, Cos & Coo): Value of these 4) capacitances ate specified at a given drain-source and gate-source voltage. They are useful for designing the gate drive circuit ofa MOSFET. In addition to the main MOSFET, specifications pertaining to the “body diode” are also provided. Specifications given are Reverse break down voltage: This is same as Voss J) Continuous ON state current (Is): This isthe RMS value of the continuous current that can flow through the diode. 1) Pulsed ON state current (Igy): This is the maximum allowable RMS value of the ON vy 13) Reverse recovery time (1 ‘state current through the diode given asa function of the pulse duration. Forward voltage drop (vr): Given as an instantaneous function of the diode forward current. y and Reverse recovery current (Ir,): These are specified as Tonelions of the diode forward current just before reverse recovery and its decreasing slope (dir/dt). Ritsian OLDER, Rago Scanned with CamScannerAp pis cakes MOSFET To 4 ® a MosFET is used for sudtbing ard comp tity olectanic signals in tne electemic devisen eh is used 0s ay inverter tater) Hopp car bee vsed in digital cet (far enrabackiy t+ mosFeT car be used asa Ligh Preqnees corpltleer ; inductor Th car lee Used ar pursite lant 2-9, resister, capaciter Gind : + #19 car bee ysed im bmahley DE Mody drive. 44 is vised Im Suite mode pomer soprhg * I+ corn be used m electronic De velog Adentnge> -& mosFEeT have high *], jurpe dence. 4 Mos FET “are Comvenind in Sustclary applicators Be The mosreT have om jveportedt pre penty Ard Nog pean see) ana rensir, capacitr, anplihir ord m Switth, Tess mate te devian ay electric cu Simple. Ciretal oxi de si kicen ) HF mosreT Hares (em Space ay clips, mah is why mos feat domminala in comput applrcedson + Toy tansuae low power . Scanned with CamScannerComparision bw BIT 4 mosreT _— iS eee gee ae BT Tyee pre & LPN Nechowrel w Pochawvel peice | cunt cadvolled Deut ce vo lage cadkolled Device. vol ona By condeolling baer cunt By codnllmy gate vo HOG covdvolled Tempe Negatve tepr condo] Positive dempr co -e evt - Cons oct ae Hea juspe duces Sui tlay ee Urq. bequeg than power applicatren preferrcel Low curred het Scanned with CamScanner