lunita_eca Semicenduator Rlnyues Energy bond: *y - Ey > Hiphest Len ef : a c. En 1 Set) ve -- vO Righes Energy bev Zoho dn VB IN wf 4 ZEN, CE | ~E. Lowesd Energy Level ye cE Tn Conduachion™ Ban d Ener ay Bond — Whe vonge of Enexgic® posersed bby electrons MM a GUA 14 Known Oo Energy band % Elecron inomy ov d of ony odo Wave avenge. of ener gies wether ten a Single Energy , ws iQ Known of energy hend- Nolence Bond (VB) Romae of energies posersed byuy Nolence Band LVB) "= Roma e ot energies posersed by Nalence Elecdrorg ig Known of VB Ronge —> 0 to Ev Conduchon Bond (C8) — Rong od Energies posensed by Conduction bond | free &) r& Kn oun a Cmduchion loon. Rawat 3) E, dow Claasificotion of Medertal’ depending on the Energy bend. 2) condugh oS 2) Semiconduchos 2) TnswWotows D Condacdors nceoeyd ¥ Fo 2 odo ee OC ave ogs Present ey Yaa Conduactes do Conantuley, | Current - B % In meals free 2S Cmlerdadion ig wndegendenr of Lenp. oe 2) Serv Conductors Forbidden Emergy gar - Seponation 6/9 CB AVS yecee in dhe energy Leyel VA Known 0s Sowbydden Energy gap. ter Ev PFwere 6 y 780 ot ev =ENV an Sovbiaden Energy gap | | ve \ Ge Ss: Eqo(ok) OFS ev yew _ E. \ Eaaook ole \-Lev “8% Femp. for SC > Ey ~Ilev 3) Tn substors Ls Enexq4 bap 7 SEN 4 Be VG vg Full CS ig Om rey Sgr Diamond, grees Cond ahvity + Cond ules > Semricondudeoss> Ink ubodo rs. Ey= E,-Ey Semiconductor S: Reastvity 16° de lo! Bey by SC > 155d 10° Rm Ler Conductors > ose 10° am fo Insulators Prop ewtics of Semianductor + Li) They nave 4 valence Hlecoons. UD They have Ve. emp. of Coedficient 0 £ Resistance, NTC TT Rw Moye +ve demp. of Coelficient of ConductanceHONG VU Temp. or LUemMUeM 8+ ConoMeemice Pie TS Cad. T Civ) Pooperties of SC con bevared by adding impunites Lo sc (IN) Corevend in SC Conmitts eb movement of Dedrong 2 hole . GV why Slim 6 widely used dhon Germaniiing ? “Types of Semiconductor ‘Semi-Conductors Intrinsic Baines ‘Or stors| pul P-Type Natype Indwinsic Semicondudos - Si 2 be iS ye Si x4 Nelence e¢ FF +etwonden Mb OK every Valence & ik inperfed covalent bonding a * VE Filed CB Empty % Intinse Sc of ok id a perked In SuledosAx Y= 300% Ak T= Book No: of Covalent bond broken = Elecoon Hole pote generd fe : ; in the b bond: omer ge. on hohe = HEX | * The process uhese Covolent bonds ave broken Cecoting ES Bhole& in cahhed generation of FHP odhexwite | lomidation- No. ot free ©S = No of holes | nop a ASK * O° Cost ers, ada hates | i ok Intrinsic SC | + Soom cs r 1 Nolue of current - | * to m ines | the Sc Conductivity which 18 Know of “Doping”: 4 su ek DeDoping’ Me Process of oddding impurities do dhe iwhsinsic SC te incwende gre mo: of free 2S ov do incense BNE no. of holed, 1s Known o& doping - Types ot Sxctoinsic $C 1) N-type. 2) P-type \) N= type SC- ¥% Pemtavalent Em purity Auclercy s) 13 odded +e pure, SC) tdi hn oun o& N-type Semicondludey Car A wSenic, Ardimon 4 ) Phosphorous “ate. ° sticon(si: >O--@-:-@: four valence ©- @ 7 > = 2 tlecvors © Adding phosphorsto ut siicon soa 74 6 Sem $6 Seriene 6: Ore: sear OS Ol Phosphorus: (B) 9 a free electron. a gy Hd] Ht 6 -@: @\: @: *— [Freesieaon] % Donor impuwtes Mecoerd donates |e to Ge or Si Crysted ce Ee 4 Ep ~ Ponor tnergytevel eyo vB ¥ Donos Energy lend 14 Crested just below dre CB. # Donor enerwgy Level indicates she energy Level of pentailatent Axor indo the pure SCEc-Ep ®&% o.csev for Ge — o06ev fer si. ¥ No. of dopont oon’ = No. of Free electrons \ a> P Np v Cenc of Cond of es Woded e N-+g7e 3 Uedwns are majon ty Carrieys ~~ Holes ore minow ty aw — Ps looams 3 loo e Ene > € \ bode ¥ Non; N; > TadsiaSic Conc. uv Gone of Eg Donor level iomi dahinn teders do se moving Pxor donor inergy Level undo C8. P-type SCr X doivent imawity > 3 Velence €s * habiiuey , Indium , Boren sesh, 0 5@:@:@: Se a , seat’ 7 @TOs@: — .. — | =O. :@:@; * No. of Nodes = No. of dopants % AtCepdor Impurities > Ready Jo acceptce Ee Soler bree, yoo seve D & © ACCepdor Energy devel ° ve e p> * Hole are maj on ty ConreienS Blears ma noity. yy SEMICONDUCTOR DIODE P-m Tundion + Too bic Proce are reBponki ble. for movement of eS 2 holes (> Daif+ Gorved + x influence of Eatemally applied & fetd Gi) Difusion: Wowing of P-N itmcton - (a) Unbio£ed Diode we : Ne OOD Ae immo Je-T04 Sree & ‘Tonos Ton oO oo % No gntemoh Yotloge = Grisiosed fon jan cdoi Dede aie eu) electron flow due to electric field (Minority carrier current) Perce é Face Holes eleven riba! Deptedion Region’ of Space chorge Region NZ Depteted of 22 Change ConeH Depledion region width > Lum = 1x195 Bariey Potential = Jumction Potential Boren poterthind See rcs field (Minority carrier current) MM Barner potenh al © Cod in Voltog e * Junction podenbad ~ Fer Si > Barrier podenbal = 0 6V Ges 4 o =9-2V Factors deciding Ye. bosriex potential C1) Semicndudes mederial used (si or be ) Gi) Deaksinsic ConchJol Si ov he before dop ny . cpg o> Penetwates more on dhe, Gi) Leved of doping on Pam SAL fe chy 1A ight ly . oped CV) Temp erature DS Grinved dec: with Aemp. vy . ro® Vy by LBV Tesmind& of b-n junchoy prod Codnode pesbe sae Anod & Codhod eSprbo8 Biosing of Rn Junction % Process ot applying Ettewnal dc wltage Jv the Comicon duh an Aiode- ree ee a % Too dypes of biasing * pe ger . se ) Fowwad Biading * pr + ae'0 ) Fowwe: i ing \ow wl =P yee an Side wey R Opetodion Seu Side 6 ok ghee pogential dian ~~ - Side Noe Sorsier os junction potential pivesion > Anode $0 Cothe de s\¢ % Forwond Currenk Te Due do Majouty Covviers. = Reverse. Biosing of DiodeTe Revere Gevren- + Pb vegion is ok lower podenki st Han 1 - vegion. sé Reverbe Currrevd ov Reverse Scbuvadton Current (2. ) Operation Nj oo how NS Deore Wi indwead BO ey we 40 widened depiction Wish ue OG» -° —s Depletion Kegioo wy) incrrembe, Is 3 RenexSe Cobtwration Current due, to MU nomty Chorge Carrier <. Ig> few re a feo WA y Bema dae fe Y ¥ TI, i& Rependent on demp- BooK 2 Ay Vemorng comtamt iwregpective of Fy wevene Vodtag oF Yok —S If Te doubles tov every 10” Cw Sein temp:Vit Chayactewistics of P- sun chon diode I, [ ¥ od r laxeead Com) Porwod Ercan on eo] Chavadlex tic > Wy Gud an veoge) N (ve) -1, Reverse. Sotucrakion cucerent) 3, (WA done) @ When V=o0, 2 Unbiased = Proce of diffusion takes Place Net Diffusion Cusret = o- @ when Vee = L4ve) pu When Ve Vs 1 > Ge 2>%9Vz D> Thermal Voteoge =23 Nz = 13BX1lo xT ‘ 6X 16! 10%) | for fey Ny = 0-2V \W6 ve St, Ny = o-FN Diode Current Equation Approwimotion > When diode ra unbraged Cease 1: Ny = '<¢ Bao Ye Ip = To [ ewr _ +] =af(e-] =2L1-1] ap= 0 Coge2: When Diode ig FB fe \Q= 4¥Ve y > Ip=n [ eT vo em 5> 4 Nb) er ° So CokeS> When ddode (4 RB ie Vo = -Ve Np Ipe= tele -14 Ry) cga L duc de Ne Vo teae, | Ip = to frl= -3,Exp! (a) Determine she ermal Voltege af 20°C, (b) Find Me diode Curvvert if Tylords) = HOA, MeL Vp = 0 5V So) (a) = TK) = 204833 = o0%Bv = \\G00 \ 1600 Ne = 25.25 mv (eo) zr “> = a fer -1] = Yox lo 4p Rasa J Ip = @:4ILMA Eup! Given a hede Curves of BMA 2B Y=) » Frad 2 (Padme Appuied Voge ra 0 SV 2 T=28%. Sed! Ip = BA Va) Ig =7 Ny = OSV T=258° Ny = 2CK) — 254293 = 25.68 mv (600 Née0 T= 7(e7™) Me > BS an -3 IVM6 @xi0 = tele —-1] - Ts = 2-Boorzxio x lo \o l= ae balTs = 2 Coork\o x1e \o = 2B0o2P A Exp: Given a dicde Gorrnt of mA , Vy =2LEmV 7) R Te =iMA- Find the apptred Vottege Vp ? Sous = 3sf oa) exe = val en Vo -2 € ew ays exis = €xt6 lo 2 6 é evr = EXlO4+] XSxO Todking MNoduwdh log on besh Side we = Ba (Ox) -3 Np = 1x 26X10 x Wn(EX 104) Vo ay Ene! Zo of S50K = Sm Mp = O-6V Ent Tp ak 350k br Si Mode Ses Ip = Zo [e** Tay] =r 6 = syio Ce or] Vy =o = BS2 = Bolan (V6 \\g00 -4 oO: a. rf Adeamve? 29=A a ty = 5x10 L Erxseexi? _ |] “LDEAL DIODE x FE >mA RB HA + nf % Diode con ad o& a mechanical Soitch + - = + 7h ys Yr a) Ub) %¥ FB BD ots oo Grodt Growt — ag => 4 nm open ciwewik = Diode Equinctent Crowd \\ Piecewise Juneor ~ ] ot Xt a, f eT 6a yg, \- \ ~ T 1 |r _ ’ 1 ‘~~ = ~~" oF v Ted diode. 2) Simptivie) equvvalect fh odt 13) deol Diode ay — = st Sewer Diode Conf guvodiong Eup: Fox the Sewies diode Conbgrrration ) detesrrine Vp , Va & Sd Sol! DD Forward Biased Vy = 0-4N B—oF- Tpx22xw=0 BN Ip = 3:3 — = 6.00332 = 9.32mi Davie <3 3 Ng = DRE BB2K "22x10 \Na= 4-3NDiokt SFE 2AM 22 Lier — oF ax xT= 0 T= 22-0-% = 6.26mA (aww 3 Vo = Txvevid aw = 6-2eywey 2X fo —_ \No= 4-52N nn Emp: Dperer mine =yM Nr % Vo. Sod! Diode > ON Grete Anoduna KVL yAppaying KYL r= O+x5-O-+ Tt LotmA Mo= ot $ i= XA Na = 2 x a EX22x16 Vo “Man FS = 9 \o —Iyy4xo%—-04 — TxX2.2xP° 45 = 0 is) (4 F422) x 107 i T v lov wv =e say ~ “ry oO we Og -3 3 2OF KI XWHEXKIO HPEBV 204 X ex 22D = 4.55v No = N2-S5=4-55-S=-0-45V Exp? For dhe Sevieg Siode conhguvation detesmine Ve, Vo 2 Tp OSV aD 4 Mo Veet 2K Sal! Diode > OFF Stabe Ip=ofh Vez OVE oS— NyCod: D, DON Store by > OFF Stoke Ny = In=o N, = ON + D o fer a 26 -Vy~ —= {fy 5-6k Yo / ~ a= aN |e. 20V Poralle? Con dguration Emap" No, 3, 1 So, 2 to, = 6-32K i Cn Sali D1 > ON State Dr > ON Sree Ne = ov 0-23% + \o— 1,x0-33xlo —o-F =O lov = ry oav gq7- YO oO) Ty 7 - Ty = AB =2818mA VF o-33K 10% X= Ip,t+ To, Roth diode’ are Similar > Ty=Ip,= Tn 4, = IptIn QIp=T, Ty = WormA, vy ey ene non 3, = IptiIn QIp=T, Ip = Worm Tp, = Te, = 14-0GmA Exp Ne i = ¥. ya AgSame decd an * > dioded I, & Tp, 7 Sou! Di> oFF Ste Dy > ON geete Mp) av Ip, = of i 4 tp ; ; res = 5 Ty XIXW0 SXRD gy (A) “TY ere do, = 1 Sumer Exp! “yen No =? Ov No Mw D\ Sod! Di ON Sere Dar OFF Site \ov — Dy %o ovSos! D, DON Stete Dr ON Gate _ ov ZK ON Apply KVL im loop! are 2o-6-F-0-F HTXS-Cx1p = 0 I, = 3-32mA Sr apt 3 \—_——. OF = TK BAI ‘ Sy I, Sot ,= 6.2109 W-] oy 33K 33x16 TL = M+ TyRECTIFIERS Noe T = Vm Sinus Nov 1 AC O45 Time period = T De T= 2A of War ws T ¥ Converts AC into Pubvosing BC e 4 bidivectional Vo Lege or Guvrent into Unidivestad Nak doge OY Crrentk Block Diogram of powes Cuppahy - Gep do . hel Sresbwer Recties -—>) Filter 7 Heels PF ip SHL are x 7 $v J -s Fie pan ip TT Rectifi ews _ Hal Wave Revtfier PY Wore weitierVv +N -ve Centre tapped a@ndge Ap ~~ aia RNo sot During +Vve half Cyehe (o $oT/) Bon stebe _ 2 I= Vo + + R Y \ Revo= MN De Ni ly a2 re - Me =M N. [Ve = Vi = Versiauadl OFF<——h — . Peps Ni R Vo =O + k in 2 Noo réeser = a NF Ve Sat of CT (l No =(Ni = VmSinuod e TT 2d _ Sarat a) =e)= [se | > SE)- (e-2) | - (EE ee) = [Pz _ = New = Walz 2 In News Na] | tees = Sg = Spe = Ripple Factor Cs) DC* ppies ¥ RPC <= ~ 29. %& % ShHowd be o& lod of} pommbre He Te indicted how Close Mneve chi fied ouput 6 dothe pare rdek dc Vo tkge ~ (Reap = fF ws Peo Tnveste Vottoge (PIV) 2a phFeok neste Vowtoge (YLV) Goad” nena Fe Maw: Vottoge of pode New ia RB before breakdown “Pe rVN= Ww Nm —Vo —Vo =0 Vp = UV PINZ\m] ~ D, Gr Bratton Dr> —_v>t— ~eqion\ —pr— PIV=2V PIN= bv Fd Wave Rectifier ) Centre tapped Wowk % Deny WE halt Gve (o Se 5.)—_ Durning tve ld t Cyae (o eZ) Dion Dy 20FF No = Ni = Ne Sinud Nee T= No = VaSi = Im Sino wR R No = Vi = —Nm Snud Ta Vo = -Venbnwl = — Im Gawd & wR No = CNG = Vow Sawt Ost 27/2 -Ni = Ne Sino = 14 36T DC ov Averoge Nude (Vac 0+ Vu)dC o¥ AverogeNulue (Vac o*Vav) Veo = ("ved T ° at [ova + (iovie ] ee 7 — + {5 \ren Sin wad SE 6 Vesinat bt] Tv ° de = 12 7 _» Sinu & Se ~Sinat dt | =¥’L Qs +18 we = Qa 4 Vesa = oo ¢ Vo at T lo TW ok Toy? = Jz f, wae a Cw ot = ji (rae = | 4 C8 sihasot Nosy = { Ve C \=coS2udt cbt Tr D 2 Vics = Vo veRipple Factor (x) w= News JE = (@ey- Nie ) Gay") S = 8-482 PIVC Peok Trveke Nodtog e) oy Vp 3 Vota ge atws _ = oo gtiaase yg a Vin tN ~My = 0 & Vip = 2m PING 2m ah Prv=sv 3VE -- Boidge Rech fierDuning Ave holf Gete lo to Ta) '- DS oF F Dr > ON Dy> OFF Dz oN No = Ni = Nan Smeg = Veo = VanSinwd = Im Snot g RB D, > oN D> OFF Pur oN D2 20FFNo =| SoSee oft 2tl2 — Vn Sinwe m Yen Smt O< HET Im Snat hs ber vy Ven _ oO No N Za DC oF anew Volue Nac = 2No =0-626V oye ce a oO. ny Rog Value Noms = Mea — Vz Riggle Facts S =0-4RD PINv PLV= éV ai \ r BRIDHE BYES uy | Tv v - Wwe © Contre Tapped Bridge, No of diodes a2 Zz 4 Vac Noda DV JA 2Nn) Ar Vesens Neo | No AZ Veg NE Tipple Lagos 2 O48 O48 Rav Nm ZING 2m Exe! oP +n KE Lor rel Vv R 2K Vv PR, % 7" Yo _aal- -\I - | (0 MKewch Vo Cb > NacSd! Duving AVE half Cycle = — + 4 D> oFF s hte pe Neo = OV ° - During Veht Care oo + D> oN Ste aw ® C Ye Vo Bppdying KVL Fo —% —-Vo =0 No = -20oV (a) sKekth Vo —Ve WR GV okehVO CH) Vac CS) Vang iv) PVSY During, We Wulf Cache T= N - bo Ree — LK) WAX42%) 4X03 Te= ° * at oe FSTyrza it G 3 Te = as ma Mo = \Smh No = JoX2K = \sxre- Y2X0° Nia No Be During Ve Wit Gye. zt D) Don Dr 9 OFF T= = Go = v a Go to Ree Qari D TUnwWK LD Gs)No-Vo =9 Np = Vo = Bov PIVZ 30 Eng’) &kach Vo bY Mac c) PLV Ses; Dusing ave half Gxde D\SoN Dr Soff De ofF DON—Vo —Np = 0 Np = —-No Ny = — (N80) Np =loov Vex(P2Y) PIN Z[Iloov Rrseak down Mechanism D Avdlonche Breakdown 2) ener SreasdonNN Avalandke Breakdown Mechaniom +. . rey? * om . Sewn ps | x Mine wire Change Conmier$ goin momentuny & tune © wn eegs: x Due do edesric CoML sion xe ig ~welemted- Relegteh —§ S-h_stl “cole with odhew bonds Comabodine smmuttyplicabion of Onarg e Carei ews Reevse Current increase. x KK OF Impact Tonigako 2) Zenex Breskhown ¥ Heo ily dopeh Pn juncdon % Depletion region i& Narrow. MM wWe= lun = leh= IW ~ \ev \gpem In | xX © Gi i 5} GAL be wup tured | 2 xwie j Rerrewe Wore Neveme | Zener Diode i AtPSse Sdode Kn od s Vo deve % Higddy Aivde ¥ Blows operated under RS * When FB, ik wi work of Nowmal Mose. ¥ — Symbel: I Equivdent crt of Zener Dice () When ZD 1% FBeo LL SS |} oFV ~ \ \ Practed Zp Ide 2D Gi) when ZD tA RB eS I Ne otf fF / | V Man. power ALSssipation across Denes Hode Eeeg! a) For She Zener diode networ of fig. , detesmine NU, Na, t2 2 Po by) Reped pord (ar iF RL ig chorged to 3KIE + Meo = Row RAR = Ade _y I6 Lae ZL x10 Nog = &-43V Vz =)ov Noo SNate NL= Vee = B:93V r Va = M-V> = 6-833 | Vez 4-29N IT,=0f Pr = V2tr= OW b> QaCore ' My Ya, Ta Bea Coicud Vex ee 4h 2 ae —J4t7 Nec = 8 —y\6= VN = ~ vw Ni = \eN Noe Na Zenes Ain \ on’ eheke VL = Vze lev Nae Ny -No Ng cb -le = 6V “ae S2- te-1, tT > Yh s 4,7 3 & ee —, 2 Za = 6mA — 3.33 mA a ea ae = a. P No Tz = Wo x2 yo = 26-FawW Fined Nj) Nowiabte a.esmine dhe e 7 ca n etermine the Man- WCored oe , wan A a oe = B20 ° Xyn= 320 Woe Na = [4 Row Re Rime Rinig = Nek - oY = 2500 Move - Se —le Tyme = Vz ~ to — Homa Rim, 250 Tez Lam + Doan Zim = tea-tw <3 Zima = Mg — 32a = Yigve _ 32x18 = Sono. -ax6" Ixy 03 Line = BmA Rae = Ne = 10 ~ = 1-25KR Zim BOS Fined R, , Vavioble Vj we Mi mute be Sotbiciently large $e tui dhe Zener diode oN. elonA QR stezism eaT.= s facd Ru Tas T2+ tL Lena = Tom tb IL Nieman = Vaan ¥V2 = Lema + V2 Eup’ Determne one od Vi gOS coi Sh mori cteria he Zerex diode i ‘ON Stele. Sed! NE R+Rv Ny @ 5 amin = (RERDN2 = 220 F12KW y20 RE ae Vinwn = 23-699 Te=Tr+IL Tpam= Lem + ty -3 % Tame = Sextet No — fox y 2s 7 - Taxi? Lemon = t6IMA imam Vaan *V2 = Lema REEVE 3 Vinan = F6-6FX10¥220 + 20 Vien on = 36387-VCLIPPERS * C\ip + deo remove © Cappers are networ shed Employ clio deb oo ‘Chip’ Away OQ portion of on input Signal si thou diStorhing BNE Semeining park of applied voave form, % C\yppew —> Sewies > Diode isin Sew'es with load Pavol) S 4% 9 4 Paolld 4 Semer Chippers Ai o——}| ve aN + av Ni Rv +o = =N-|== ° . Negadive cli ppews vin /\ ty Biased Sewies Cy Mepe: - GW) Determine open Civcnik vo dtoge across diode N Nor eeGi) Derermine dreongition Volrege 2 wrongs of Vi for diode do be on’ oy ofF Ronge of Vi Vi-N GO Ni gv ViNvo NIGN Treongition \lo Mog e. sN Ve -V =-VYo=0 Vo = Ni -V Diede No OFF (vp 20 6 ON(Yyy0) i-V“ “UL Vo aw) - 7 ‘ Sketch Vp % Sod W) To clcwlote 0 C Vo Ltoge - Nv de = + ahh 1 MI45 -Vp = + . Va =i = v ? e452 Hl (sFe) “N45 =] bonJu Uw) Rong eof Vi Diele \ VixS0 9-5 on (vy>0) = Mi 45 Ni 45 No =0 Vo =vitS \ svSterdh No -5 4 Yo_ Sp G) OC Nol- acre diode o—|\\—> ° + 1, Vp = Ni +5 vi R Vo —_—— Ranged Vi Drode No Ni <-5 OFF ° 7-5 oN MAS vy 20N 6 -sv' Aw 2S Gkedch Vo? Sods UG) Determine OC Vo Stag «_ = x. =~ Not Wi-S+V—o = 0 o—\\|1—e ° + : R - | rw TL vw ra cu SH) - Vp = -(Nix3)Vp = -(Mi+3) Sol Rowge of Vy D Vo = -vVi-340 Vi? -3 OFFI WJ =O “Mi-B 78 NUS -3 oN Via Voorn ti Hon Vo Hoye = —3V v = Vi ae aes STH 2 Resume prachca dole . 3v Exp! : a= —_ Vy = -(y4 +3) Rerge of Ny D Vo-\i-3 4b-4 Ni > -3-4 OFF (Vpd0°F) ° —y-2 20% Ni <-3-4 ON (709 VY, 43-9 Trorgitron Nal tye =-3-3V \ when D Son 3N — eee - 4 o—) as \ 4 Ni 43 +0-4- No =0 \ _ No = M439 Fe iy : W) @) Aili KH alee vi (3) w) Pocea ey OM peer S ars:R a iE ts -, — g ee I Vo yO uv -- - No = -N Ve ot ofr ON + “ Ny SL No o\ ar r _ eyo N + ° N i v; bu = Vo s-—____ | - Sod (Wy Dekeremine OC Vahl. across diode R = + xy y Ni 4+ Vy—-Y = 0 No. Vy = 4-¥j vi ay wk Veui) Rong cot Ni D No 4-Vi co V>4 OFE(Mbe) > YD NOY ON(Npve) uv‘ ee - mak 2B VY = ~ % Stam Vo Assume procdicel diode S& GY OC Vad acwss diode 4 w= —s + No. Ny = 4o-v; o Paid ' uy —— _ ui) Ronge of Vi D Vp MU-\ <0-F NV? 3.3 6 FERN p44) Ny UN VO* NA C23 ONWp oF) 3 3N D of F &q oe? eg Se =I. (¥ i ‘yj LL » As Soh = re ——— ae & Ne toa -U= 0 ee F Niegees aS ° YT vi x hy, i w ° _————— viSketch Vo Gad! Ul) Detewmine OC Vobsege acwors diode & —~— Vi -Np- 5S =0 Y ND _ age Vy =vi-5 \ ry, ae KT ui) Ronge of Vi D No Vi-S <0 VMS oFF Ni Ni -5 99 N95 oN 5 Dd oN RE e oF 4 + we ae ~ Mi N= =y,%o NN. ~~ _ - i Vy ova SB C1) Determine OC Wed: acvoss diodes Vi Ve\-v Ny y= Ni-NM Vi 4a, 4Va = 0 Np, = - Wy 4v2) 2 i Ronge of Vj D, D Vo Viv 2 v zl Vy gg WEN OFFns) OF F(Moo) Mi VAL <0 MINS z . Vigvy Ni<-Vo OFF on “Vr -V\ Nae oO NA < -NiY Viv >D Veo on OFF Ny Vi >Na Vi rV aDio FF, D OFF > 6 FF , DL OFF NV AY, Ni=5 NESS Vio >-Va MEd Vio>-3 —36vi <5 Ni -Ve ~0 vi (~ +, j- b No = Ni - wi = a Vj=5 Vviis Ni=Y vy 73 YN, <-3 OK Ni <-3 g 2 = 4 No = Na vo hs \ Vo = ‘ 7~ — + = » Lu D, oN , D, OFF Vie) N\=5 Mixa5 Vi>Na Ny =2 ViI-B Ow Vi>s & LE ' ae = 3 ve = “Do ! vey mm Nan mae Va,>Ne, CLAMPERS aN ZA — > pe volte = ov ae fas = ob (var =ov wae Tr ry LAmPER rae > Dec volse = 10V lov i ~vt } 4 So re ‘Es | [A damper isanetwork constructed of a diode, a resistor, and a capacitor that shifts a ‘waveform to a different dc level without changing the appearance of the applied signal. J x tt - ‘Step 1: Start the analysis by examining the response of the portion of the input signal ‘that will forward bias the diode. Stk ‘Step 2: During the period that the diode isn the “on” state, assume that the capacitor me Ve=N yetwork Ne Step 3: Assume that during the period when the diode is in the “off state the capacitor holds on to its established voltage level NV de A -V -\Vi=Vo =0 Y om thew No = -2V ~ {| -Step 4: Throughout the analysis, maintain a continual awareness ofthe location and defined polarity for Vo to ensure that the proper levels are obtained. Step5: Checkthatthe total swing of the output matches that of the input > Toteh Sorig = +V- (-y)=2v | => dcievel=d vi Ww t De deve = -vV d.-35 3 D > OFF Stote eodi-d4 3 D > OFF Shote as o—ie lo 425 —Vp = 0 + y Vo = 35 lo (Yeh aR vo -\ {| - sv — > Song = le —(-2a) =30 ov t-- Eng! vy \o 4 fs > y Stuth “Mo. Pro Sume_ Prredrcoh drode. Sk dite DD oN Sree -20 4+VNC +6-4-5=0 0 Cy sl — Np = &43N ~ Tee es ~- Ne= 24,3NV wy we ety | Ve 2 -oe4 5 . = Wan kaosy OD DOFF gete ae \o +Q4.3 —Vo = 0 Ne = B32 V Ni guna = le -(-28) <0 2 Seng = leo (2) = aS -20 HAN \ oot \ > Suig — 243-93 | = Rov 1 \ gateNez sv Neo = §N 3-4, D>A0FF —\o -S5 Ny =9 No = -\SV Nv 1 -\6N a Yo lo CY == Se = Tt 7 + AA grey, ) = fo C= (o-(-\9) =20 ss -\o T e = 5-(-\5)=20aya! D>orF —\e-\6~-VYy =D Noo = - ASV 4 e a AL ~ SV#ll 4 vt ~ Rowkigg'= (1) Ducting te hf cyte D\> oN Do > of F Nm No, =o Nie, = Vy UO Dusting We halt Cache D> oFF Do > oN Nw Nm Ve = 0 Nea = —2Ny Ne = Ye, = 7 (- 2Nw9) = Wy Full wove Voltege Doubles —TWA Wave Voltage Doubles —Ni —Vey = No = Vey Vo — Ve; Ne =o Vo Non Vm 2 Ne = LV \lodtoge Triples &_Vo 2 Quadrupley Woxking » GY Ducing fast tye HO D> oN Pa DOFF Dz ON Dy > oF F Vp, =0 Vo, =No Nay Ne e \No . e Von #Vp,~2 Neon Neo 4 Dr B3 Py Gr cy Noy —Vag =o NQ=No Lil) Duviey fret Ve HO - D2 OF& DionUi) Dusing Her Ve HC DS OFF DSN D3 > OFF Dy ON Vey —— & \ + uz cy No -No 4Ve, = 0 N= two Ne = BN UN) Daring Gemond $NE HC p, DS oFF 2,2 OFF Dz Deon Dy DoF 1” Nn Vn Vig Wm = 0 = WwW. Nog > (iv Doing, Second Ve + Dp, oFF Dd >OFF Da doFF Dy oN Ws Ce 4 _ PSSSTPy t= Neg = 2 Ving Noy Nig = 2¥m +Vey + 2m = 0 Ney = IN Tripler (Yq) Quadrupler (4) SPECIAL PURPOSE DIODE VARACTOR DIODE vesecroK pI % Nocicap dole * v= ons @- BQ) % tuning diode oF Vobtoge Nariable Capacrence (VVC) X_Sysnbed? oe Printaple of opetedion va ee eee:Oe? ‘eelo@s-' ve HH Atways opercted under RS % RAN Waren > plated of Cap- Depletion wegon > ALIS of dete Paice x Cy > Toren Siding Capacitance Cy = ER . wa Wa + width of depletion vrexion - W << WRar bios vo < Cy & —_\ 3D Re. bred VoLiege Vat wt Cry Onos. curve of VO 2 Cr (pF NaaL —ya— 2 eg |e RIM ¥& Re = Geomedbric wea teronte of disse: Ry = Reverse vesictence (mad x Cy > Nemdbe - %* Ls Effedde ctadadenc Cont) Tumel Diode * “Negative Registence * Esaki drode Ye Makevich Used = We oy GakS ox SY Conterenchio? % Limiler re Pn jonchon diode % Reanily doped Be jun chon e Pan” drode Prinuigie of Oper abioo Wy ¥ Ween edhing phenomenon:fb Sra A dts ¥ EsoM Wereate, x % Tummebing OCCuvs aDrnott ot the Speed of Light % “Fost sesirching” > Vighes Fregnend . 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