Shahjalal University of Science and Technology

Course: EEE 459 (Compound Semiconductor and

Heterojunction Devices)
ASSIGNMENT: 1
 Submission deadline: 08/03/2020
 The CR has to mail me all the assignment in a zip folder named
EEE459_assignment1 within 11.59 pm at
ishfaktahmid@gmail.com
 Subject of mail: EEE459_assignment1
 All of you have to name your file as:
EEE459_Assignment_1_studentID
 And file should be in a pdf format of your scanned copy of
handwritten one.
 First page of your assignment should contain the problem
statement. ( You may use softcopy for the first page, handwritten
is not required)
For a GaAs - AlxGa1-xAs heterojunction determine the following:
1) Energy Band Diagram
i. Before contact
ii. After contact
2) Xn, Xp and W ( Assume necessary values mentioning the name of dopant
you have used)
3) Proof of built in potential barrier Vbi
4) Proof of Electric field equation with plot.
5) Proof of potential difference with plot
6) Proof of depletion region
7) Proof of capacitance with approximate plot of (1/C2) vs VR.
*Note: Here small letter denotes semiconductor type of GaAs and Capital letter
denotes semiconductor type of AlxGa1-xAs
* use band gap of GaAs = 1.43 eV
Design specification is given here in tabular format:
Student Id GaAs AlxGa1-xAs x ∆EC Marks(20)
type type
2016338001 n P 0.25 2/3 ∆Eg
2016338002 n P+ 0.25 2/3 ∆Eg
2016338003 n N+ 0.25 2/3 ∆Eg
2016338004 n+ P 0.25 2/3 ∆Eg
2016338006 n+ N 0.25 2/3 ∆Eg
2016338007 n+ P+ 0.25 2/3 ∆Eg
2016338010 p N 0.25 2/3 ∆Eg
2016338011 p N+ 0.25 2/3 ∆Eg
2016338012 p P+ 0.25 2/3 ∆Eg
2016338015 p+ N 0.25 2/3 ∆Eg
2016338016 p+ P 0.25 2/3 ∆Eg
2016338017 p+ N+ 0.25 2/3 ∆Eg
2016338018 n P 0.30 2/3 ∆Eg
2016338019 n P+ 0.30 2/3 ∆Eg
2016338020 n N+ 0.30 2/3 ∆Eg
2016338021 n+ P 0.30 2/3 ∆Eg
2016338023 n+ N 0.30 2/3 ∆Eg
2016338024 n+ P+ 0.30 2/3 ∆Eg
2016338025 p N 0.30 2/3 ∆Eg
2016338027 p N+ 0.30 2/3 ∆Eg
2016338028 p P+ 0.30 2/3 ∆Eg
2016338030 p+ N 0.30 2/3 ∆Eg
2016338031 p+ P 0.30 2/3 ∆Eg
2016338032 p+ N+ 0.30 2/3 ∆Eg
2016338033 n P 0.25 1/2 ∆Eg
2016338035 n P+ 0.25 1/2 ∆Eg
2016338036 n N+ 0.25 1/2 ∆Eg
2016338037 n+ P 0.25 1/2 ∆Eg
2016338038 n+ N 0.25 1/2 ∆Eg
2016338039 n+ P+ 0.25 1/2 ∆Eg
2016338040 p N 0.25 1/2 ∆Eg
2016338042 p N+ 0.25 1/2 ∆Eg
2016338043 p P+ 0.25 1/2 ∆Eg
2016338044 p+ N 0.25 1/2 ∆Eg
2016338045 p+ P 0.25 1/2 ∆Eg
Student Id GaAs AlxGa1-xAs X ∆EC
type type
2016338046 p+ N+ 0.25 1/2 ∆Eg
2016338048 n P 0.30 1/2 ∆Eg
2016338049 n P+ 0.30 1/2 ∆Eg
2016338050 n N+ 0.30 1/2 ∆Eg
2016338051 n+ P 0.30 1/2 ∆Eg
2016338052 n+ N 0.30 1/2 ∆Eg
2016338053 n+ P+ 0.30 1/2 ∆Eg
2016338053 p N 0.30 1/2 ∆Eg
2016338054 p N+ 0.30 1/2 ∆Eg
2016338055 p P+ 0.30 1/2 ∆Eg
2016338057 p+ N 0.30 1/2 ∆Eg
2016338058 p+ P 0.30 1/2 ∆Eg
2015338008 p+ N+ 0.30 1/2 ∆Eg
2015338032 n P 0.35 1/2 ∆Eg
2015338033 n P+ 0.35 1/2 ∆Eg
2015338011 n N+ 0.35 1/2 ∆Eg
2015338028 n+ P 0.35 1/2 ∆Eg
2015338006 n+ N 0.35 1/2 ∆Eg
2014338040 n+ P+ 0.35 1/2 ∆Eg
2014338006 p N 0.35 1/2 ∆Eg
2014338039 p N+ 0.35 1/2 ∆Eg
2013338014 p P+ 0.35 1/2 ∆Eg
2011338029 p+ N 0.35 1/2 ∆Eg
p+ P 0.35 1/2 ∆Eg
p+ N+ 0.35 1/2 ∆Eg