8.1 _ Introduction : The Field-Effect Transistor (FET © — Although there are many differences between these devices. between them. ° gate acts as a controlling terminal. ¢ The BJT is discussed in chapter + Controlled output current Ic Controlling input current (a) BUT is a current controlled device These applications are very much similar to those of a bipol +) is a three terminal device used for a variety of application, jar junction transistor (BJT) there are many” similaniss The three terminals of an FET are named as drain (D), source (S) and gate (G), out of which Controlled ‘output current Ip FET Controlling input voltage Ves (b) FET is a voltage controlled device wl The similarities and differences between these devices are as follows: Voltage controlled or current controlled ? FET is a vewge controlled device. The voltage applied between gate and source ( Ves) controls the drain current Ip. ThereforOE the wansistor On the contrary js current ¢ i ‘ y isa 7 i : ould Y vane te bn ea nirolled device because the output current Ie is 2 Se current I, ‘The mine field effect is derived from the fa + Jeet field set by an external vote” 6 Hat th curen Now in FET is conroted by an Unipotar or bipolar FET is a unipolar device, that mean charge particles, holes or electrons, ‘Transiony and electrons both contribute to the Now of euneas Just as there are npn and pnp transi : * transistors. slors, there are n-channel and p-channel field effect One of the most important characteristics of Cee cue Hes of the FET is its very high input impedance to several mevaolis, Hey feral megaolmns, which is much higher than the input i NS the current flow ing through it is only duc t0 one type of other hand is a bipolar device us holes «FETs are more temperature stable Se As compared to the BJT and it requires less space than that are preferred in integrated circuits 8.1.1 Advantages of JFET over BUT : The FET enjoys several advanta them are as follows (1) It is a unipolar device so its operation depends on the flow of m: 2) Itis relatively immune to radiation. G) FET lus a very high input resi (a) FET is less noisy. (5) It does not exhibit any offsct voltage at zero drain current hence it can be used as an | excellent signal chopper. (6) FET has a better thermal stability 8.1.2 Disadvantage of JFET : ‘The main disadvantage of the JFET is that it has a relatively small gai compared with that of a conventional transistor. ~ 8.1.3 Classification of Field Effect Transistors : The field effect transistors are classified as follows © Junction field effect transistors FET) © Metal oxide semiconductor field effect transistors (MOSFET). The junction field effect transistors are further classified into two types as n-channel JFET and p-channel JFET and the MOSFETs are further classified into depletion and enhancement type MOSFETs. Wes over the conventional bipolar junction transistor. Some of wajority carriers only nce (typically few megaohms) clas Field Effect Transistors (FETs) Junction FET (JFET) MOSFETs MESFET channel JFET p-channel JFET Depletion MOSFET Enhancement MOS!8.10 MOSFET : another type of field 1, As explained in the classification of field effect transistors, MOSFE effect transistor. The MOSFET has become one of the most important devices used in design and construction of integrated circuits for digital computers. MOSFET is the short form.of Metal Oxide Semiconductor Field Effect Transistor, MOSFETs are different from the JFETs in construction and they are of three types = Depletion type MOSFET (2 Enhancement type MOSFET and © Power MOSFET. 8.11 Depletion - Type MOSFET : pe of MOSFET icc. the depletion type device. Let us now discuss the first 8.11:1 Basic Construction : © Construction of the depletion type MOSFET is A p-type of semiconductor material (silicon) is used as a substrate. Usually: the substrate is as shown in Fig. 8.11.1, internally connected to the source terminal. But sometimes it is taken out as a separate terminal termed “SS” © The drain and source terminals are connected to the ntype regions through the mel contacts as shown in Fig. 8.11.1. © These n-type regions are linked with each other by a n-channel as shown in Fig. 8.11.1 . ‘The gate terminal is insulated from the n-channel by a thin silicon dioxide layer ( S10, ) Note : Thus there is no direct contact between the gate terminal and the n-type channel of the MOSFET. This is a major difference between JFET and MOSFETDrain (0) n-type doped regions n-channel Pp substrate ss (Substrate) Bl Metal contacts Source (8): Fig, 8.11.1 : Construction of n-channel depletion type MOSFE1 Effect of the insulating SiO, layer : Due to the presence of the SiO; layer between gate terminal and impedance of MOSFET is very high. This is a desirable feature of a MOSE impedance, the gate current I = 0 for the de operating conditions. Why the name MOSFET ? “Metal” for the metallic contacts used for connecting the drain, source and gate terminals to the respective regions. “Oxide” for the SiO, ic. silicon “dioxide insulating layer and “semiconductor” for the basic semiconductor structure used for the device construction. Combining all these terms we get the name MOSFET for the device. 8.11.2 Operation of Depletion MOSFET : ov: It shows that the gate, source and substrate terminals are connected © Refer to Fig. 8.11.2 together to the ground point. Thus Vex = 0 volt, A positive voltage Viyp is applied ype channel, the input P. Due to high input (Operation with Vg, between drain and source 1 Substrate is connected to the source terminal plied voltrs OT Due « ane positive Voltage applied to the drain terminal, free electrons from the che, Ae(ed to the drain and the drain current starts flowing as shown in Fig. 8.112"! Opens + this current is labelled a Iss. As . as of depletion MOSFET with negative Ves # ire Fig. 8.113, Due to negative voltage applied between gate and cathode (crm gate will tend to repel the free electrons towards the p-iype substrate and attracy holes from the subinte. “ SHRI thy n-channel Recombination process i p metal substrate + Holes attracted Metal contact to negative f+ ~ potential at gate] SiO, layer Fig. 8.11.3 : Effect of negative gate to source voltage on drain current These electrons and holes will recombine inside the channel as shown in Fig. 8.11.3. This will reduce the number of free electrons available for conduction. Therefore the drain current will decrease with increase in negative value of Vgc. Thus as ° — Veg increases, ly decreases for a constant value of Vir. Iy(mA) ¢ 10.9}--- Depletion mode << | |= > Enhancement mode Ves (Volts) ; L 6 F ee : Vp Vp 0.3 Vp 2 Fig. 8.11.4 : Transfer characteristics of an n-channel depietion MOSFET© Depending on the magnitude of 4 electrons and holes will occur. Eee tive bins Veg a level of recombinsition betweet n-channel available for conduction Yi Mauss the number of free electrons in the ¢ The higher the negative bins. th current. This is as shown in the trate aarti een “ ‘ 7 ransfer characteristics of Fig, Git) Effect of positive gate to source voltage : aan If the gate voltage is la mx c f draw additional clectrons Fs positive with respect to source then the positive Vox “il S (feo carrier) f 7 ca 3 (fice carriers) from the p-type substrate due to reverse Teakee © These accelera aes rated electrons will knotch out more electrons due to collision ; hus the drain current will increase as we increase the positive voltage Vas: This mse 1" rain current will be very rapid. We must therefore be aware ‘of the maximum draw current rating and should not exceed ly above that © Thus the level of free electrons has been “enhanced” due to the application of postin’ gate voltage. Therefore the region of operation corresponding 10 the posite Ba one Je called ag “enfuncement™ region of opemtion and the region between! cutol avd saturation is referred to as depletion region, This is as shown in Fig. 8.114 «The transfer characteristics shows that Ip has a nontinear retation with Vos. 1 eam be expressed mathematically as, [Vol 1, = Ipss 1-35 (sl) . S| pd 11.3 Drain Characteristics of n-channel Depletion MOSFET = trchannel depletion MOSFET. Note that this Fig. 8.11.5 shows the drain characteristics of a FET except for the positive part of Vg haracteristic is same as that of a JI Ip(ma) Ves = tl iV 108 Enhancement mode Vos =0V Deptetion mode Vos (Volts) Fig. 8.11.5 Drain characteristics of an n-channel depletion type MOSFET ig. 8.11.5: see . Drain (D) ‘Drain (D) Gate (@) Gate () Source (s) © se (8) (a) Symbol of nee ~ Y -¢ nel depletion ¢ MOSFET pietion type (b) Symbol of p-channel depletion type MOSFET Fig. 811.8 ; symbols, Drain (0) Drain (0) Gate (Gg) ‘Source (S) (d) p channel ‘uit symbols for depletion MOSFETs 8.14.6 Effects of Silicon Dioxide Layer : - Due to Z the SiO, ‘ayer, the gate is insulated from the substrate. This isolated gate structure has the following two important effects 1) Increased input resistance. 2) _ Increased input capacitance. Increased input resista-ice : Due to the insulating properties of silicon dioxide layer, the gate current is reduced to a very small value than that of a JFET. Hence the input resistance R,,, of a MOSFET is yery large Increased input capacitance : The gate and chennel will act as conducting e plates and the SiO, layer acts as a dielectric t of a MOS-inpt capacitance as shown in “PT Fig, 8.11.9 Source ® The input capacitance of MOSFET is higher than that of a JFET. Fig, 8.11.9 + Input resistance and capacitance of a DMOSFET as normally ON MOSFET. Why ? 7 Vescort ys OV. It turns off only when Vs 5 , We lave to apply external | the D-MOSFET is ON. Depletion MOSFET is called An n-channel D-MOSFET is ON for Vg; MOSFE''s are called as normally ON devices ff, Without the application of any external Vgg pplied. Hence the D- egative Veg to tum it 08.11.4 p-channel Depletion - Type MOSFET : The construction of a p-channel depletion type MOS neclannel MOSFET shown in Fig. 8.11.1. ‘The constr depletion type MOSFET are as shown in Fig 8.11.6 and F T is exactly opposite 10 that of the on and clamacieristics Of & p-clenngy ys. 8.11,7a) andl (b) Tespectively Drain (0) SiO, r ° Pp _— p-type channel Gate (6) in ss * 1? 1 substrate Vas Bi Metal contacts Source (S) -. Fig. 8.11.6 : Construction of p-channel depletion type MOSFET * Note that all the voltage polaritics and current directions are reversed as compared 1g n-channel MOSFET as shown in Fig. 8.11.7(@. © AS Veg also is reversed, the transfer characicristics as shown in Fig. 8.11.7(b) is the mirror image of the transfer characteristics of the n-type depletion MOSFET. Ip (ma) Tp (ma) ip (mA) Ves=-1¥ . ss Enhancement, r ; Veg = OV. mode, waNblogs =p Depletion (a) Drain characteristics Fig. 8.11.7 : Characteristics of p-channel depletion type MOSFET 8.11.5 Symbols of n and p-type Depletion MOSFETs : in © The symbols of both nand p-channel depletion type MOSFETs are as shown Figs, 8.11.8(a) and (b). Note that the substrate is connected internally to the source terminal8.12 Enhancement MOSFET : also be classified in an ‘The other type of MOSFET called enhancement MOSFET can n-channel or p-channel EMOSFET. 8.12.1. n-Channel EMOSFET : “Tig 8 g. 8. ‘The basic constuction of an rechannel enkancement type MOSFET is as shown in Figs 81.) rate is sometimes connected (0 A slab of p-type semiconductor is used as substrate. The subs the source otherwise it is brougbt out as the fourth termi Brain (0) layer > a SiOplaver_\ __—ntype doped region . ne] Channel is absent ss Gate (@) (substrate) [Bi Metallic contacts n-type doped region Source (8) Fig, 8.12.1 : Construction of n-channel enhancement MOSFET a | The drain and source terminals are connected to the n-type doped regions through the metallic contacts. © But most important point to be noted is that the “channel” is absent here. ‘The insulating SiO, layer is still present which isolates gate terminal from the substrate. Thus the construction is very similar to that of the depletion type MOSFET, except for the absence of the channel. 8.12.2 Operation of n-channel Enhancement MOSFET : ‘The operation can be explained with two different operating conditions : © Operation with Vos =O and * Operation when Vgg is positive. () Operation with Vgg = 0 volt : If Vgg = 0 and a positive voltage is applied between its drain and source, then due t0 the absence of the n-type channel, a zero drain current will result. This is totally different from what Operation when Ves is positive : Refer to Fig, 8.12.2, where both Vgg and Vig are positive. The positive potential at the gate terminal will repel the holes present in the p-tyPe ° substrate us shown in Fig, 8.12.2Of & depletion region near the SiO, insulating layer. But the gate terminal and clectrons in the p-type substrate will be attracted towards the lace of S10, as shown in Fig, 8.122 {— Electrons attracted by positive gate (induced n-channel) | — Region depleted of p-type carters (holes) Holes repelled by positive gate Fig. 8.12.2 : Formation of induced channel in n-channel enhancement MOSFET * AS we increase the positive Vgs. the mimber of electrons gathering near the SiO, layer will increase. * The electron concentration near SiO, layer increases to such an extent that it ereates an induced n-channel which connects the n-type doped regions. * The drain current then starts flowing through this induced channel, The value of Vos at Which this conduction begins is called as the “threshold voltage” and is indicated by Vy Lad Vos (TH) Effect of increase in the drain to source voltage : * Refer to Fig. 8.12.3. The positive gate to source voltage Veg is kept constant and the drain to source voltage Vyg is increased gradually +— Pinch off (beginning) |— Depletion region =) Vos Fig. 8.12.3 : Effect of change in Vpg at fixed Vgg on the channel width ee8.12.3. Characteristics of n-channel Enhancement Ty! 110 the drain, go inuluved chante g positive with res terminal becomes less and less postive Nt At ne attracted towards ave (er ig. 8.12.3 + Due to this, the less number of electrons becomes mirow as shown in Eventually, the channel width will be reduced (0 2D n willbe established, which is same as | int of pinch off and the saturation ah or depletion type hat an a IPE" conditi MOSFI That means any further increase in Vs conditions 3 saturation level of Ij unless breakdown c wered, The main difference in the construction of JFET at Cr the semiconductor structure using SiO, layer in E a JFET wherea the JFET. Another difference is that the channel is always present 18 to be induced in case of an enhancement MOSFET. pe MOSFET : a ul nhancement MOSFI ‘The dmin characteristics and transfer characteristics of a n-channel er as shown in Figs, 8.12.4(b) and (a) respectively. Note that the drain current is zero for Vas $ Vr c 8 h The transfer characteristics shown in Fig. 8.124(a) is very much wins zero till Veg = V- earlier. It is now totally in the positive Vos region and remains 2er0 {HIT Yas © TT Ip(mA) Ip(ma) aracteristics (b) Drain cl (a) Transfer characteristics ics of a n-channel enhancement MOSFET Fig, 8.12.4 : Characte The relation between drain current and V;,. is given by the following equation, 2 K( Vos oof Veg will ‘W0t affect thy Constructional differences between JFET and MOSFET = and MOSFET is that the gate iS Wt from, : Such isolation is Not provided in the channel needs different from those obtained 8.12.)8.12.6 Symbols of Enhancement MOSFET : Note that the substrate is imtermally connected to the sou device, Sh, ngement MOSFETS are as shown in Fig The circuit symbols of p and n-channel enha ree terminal making i€ a three tery May 1D D S 'S. (a) For n-channel MOSFET (b) For ee MOSHEr Fig. 8.12.7 : Circuit symbols of enhancement type * EC 0 G. Ss 'S (©) n-channel (d) phannel Fig. 8.12.7 : Simplified symbols for enhancement MOSFETs Summary of MOSFET Operation : 8.12. For a n-channel enhancement mode MOSFET, a Positive gate to source voltage, greater thay the threshold voltage V.. should be applied to make it conduct. For a p-channel device all the voltage polarities and current directions are reverseq a compared to the NMOS device. 7 Peculiarities of an Enhancement Type MOSFET : It is a voltage controlled device. Gate is isolated from the main structure with the help of a SiO, (silicon dioxide) layer whic is an insulator. Input capacitance is high due to metal-oxide-semiconductor structure, Very low input current so very high input resistance. Channel is not present permanently, but it is induced at the time of operation. Drain current is controlled by controlling Vgg in the positive direction, It is a unipolar device, Can operate at very high frequencies (few M.), Applications of EMQSFET : EMOSFET can be used as a linear amplifier, As an inverter, _- As an active load (in integrator circuits), > s~ — Field Effect [ransis*"" CMOS inverter. In the digital circuits, 8.12.8 Peculiarities of Depletion-MOSFET : ‘The channel is always present The gate is isolated from the remaining device structure by a silicon dioxide (SiO,) layer. It can work in depletion mode (with ‘Vos negative) or enhancement mode (Vgg positive) Input capacitance is high due to the metal-oxide-semiconductor structure, Very low input current so very high input resistance, Biasing arrangement is exactly same as that of a JFET Can operate at very high frequency. 8.12.9 Applications of D-MOSFET : D-MOSFET can be used as an amplifier. It can be used as a switch, 8.12.10 Advantages of MOSFET over JFET : MOSFETs have g higher input resistance than JFET. The gate current of a MOSFET is almost zero. So the loading on the source is considerably reduced. MOSFETs consume very small power. So battery operated devices like calculators, watches etc, prefer MOSFETs. a MOSFETs can operate with positive as well as negative gate to source voltages. MOSFETs can be switched on and off at very high frequencies. So they can be used at higher frequencies.16.3 Comparison of DMOSFET and EMOSFET : ‘The comparison of depletion type MOSFET and enhancement type MOSFET is given in able 8.16.3. Table 8.16.3 Sr. No. DMOSFET EMOSFET 1. _ | Symbols of depletion MOSFET : Symbols of enkancement MOSFET D D D D S S © ~@ s 7 s s n-channel p-channel n-channel p-channel 2 ‘An insulating oxide layer ( SiO, ) is The insulating oxide layer is present present between gate and channel between gate and substrate. 3. [mor p type channel is present. Channel is not present. At the time of operation, an induced channel gets created. 4. | For an n-channel DMOSFET, the Vg can | For an n-channel EMOSFET, Veg will be ‘be negative for depletion mode and only positive. positive for enhancement mode. | 3, | For an n-channel DMOSFET, Ip decreases | For an n-channel EMOSFET, Ip incre as Vos becomes more and more negative. | as Ves becomes more and more posite. | %. | For an n-channel DMOSFET, Ip = 0 for | For an n-channel EMOSFET, Ip = 0 for | Vos! 2 Vp. Vos < Vr.