Microelectronic Circuits (II)

Lecture 6
Frequency Response

大同大學電機系
黃淑絹 副教授
schuang@ttu.edu.tw

Dept. EE, TTU

 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers

Shu-Chuan Huang
6-2
 Phasor Representation
 Sinusoids

v1 (t )  Vm sin t

t

1
frequency: f  (number of cycles per second)
T
(Hz)
period: T (sec)
v2 (t )  Vm sin (t   ) T  2
2
 (rad/sec)
T

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6-3
 Phasor Representation (cont.)
 Phasors

A phasor is a complex number that represents the amplitude and phase

of a sinusoid.

z  x  jy Retangular form
 r (cos   j sin  )
 re j Exponential form
  r  Polar form

x  r cos  and y  r sin 

y
r  x2  y 2 and   tan 1
x

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6-4
 Phasor Representation (cont.)
 Passive Circuit Elements in Phasor Domain
e jx  cos x  j sin x
v(t )  Vm cos(t   )  Re[Vm e j (t  ) ]  Re[(Vm e j )e jt ]
V  Vm e j =Vm 

 Resistor

i(t )  I m cos(t   )  I  I m

v(t )  i (t )  R  RI m cos(t   )
V  RI m   RI

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 Phasor Representation (cont.)
 Inductor

i (t )  I m cos(t   )  I  I m 
di (t )
v(t )  L  - LI m sin(t   )   LI m cos(t    90 )
dt
V   LI m   90   LI m e j ( 90 )  j LI m  =j LI

V=j LI
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6-6
 Phasor Representation (cont.)
 Capacitor

v(t )  Vm cos(t   )  V  Vm 
dv(t )
i (t )  C  -CVm sin(t   )  CVm cos(t    90 )
dt
I  CVm   90  CVm e j ( 90 )  jCVm   jCV

I=jCV
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6-7
 Phasor Representation (cont.)
 Impedance and Admittance

The impedance Z of a circuit is the ratio of the phasor voltage V to the

phasor current I, measure in ohms ().

The admittance Y is the reciprocal of the impedance, measure in siemens

(S).

Element Impedance Admittance

R R 1/R
L jL 1/ jL
C 1/ jC jC

Shu-Chuan Huang
6-8
 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Reading assignment: Appendix E
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers

Shu-Chuan Huang
6-9
 Measuring Magnitude and Phase Response
 Frequency Response

vi (t )  V1 cos t vo  V2 cos(t   )

 Magnitude Response

V2
versus 
V1
 Phase Response

 versus 

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6-10
 Single-Time-Constant (STC) Networks
 Low-Pass Network

 High-Pass Network

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6-11
 RC Circuit in Sinusoidal Steady State
 Differential Equation
iC
R
dvC
RC  vC  V1 cos t t0 and vC (0)  0 vS
+
C
+
vC
dt - 
 vC (t )  vh  v p
homogenouse solution: According to KVL, vR  vC =vS .
vh  K1e  (1/ RC ) t (transient term, vh |t   0) For the capacitor, iC  C
dvC
.
dt
particular solution:
For the resistor, vR =R  iC .
v p  V2 cos(t   ) dvC
RC  vC  vS
 - RCV2 sin(t   )  V2 cos(t   )  V1 cos t dt

 V2 ( RC ) 2  1 cos(t     )  V1 cos t , where   tan 1 ( RC )

V2 1
  and    tan 1 ( RC )
V1 ( RC ) 2  1
Time constant: RC

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6-12
 Frequency Response of Low-Pass Network
 Phasor Analysis
IC
According to voltage divider rule, the transfer function is
R
1
+ +
V jC 1
Vi 1/jC Vo T ( j )  o    T ( j ) 
-  Vi R  1 1  j RC
jC
where
1
T ( j ) 
1  ( RC ) 2
   tan 1 ( RC )

vi (t )  V1 cos(t )  Vi  V10
1 V1
Vo  V1   vo (t )  cos(t   )
1  ( RC ) 2
1  ( RC ) 2

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 Frequency Response of LP Network (cont.)

Vo 1 1
T ( j )   , where 0  (3dB frequency).
Vi 1  j ( / 0 ) RC

1
Magnitude response: | T ( j ) |
1  ( / 0 ) 2
| T ( j 0) | 1
| T ( j0 ) | 1/ 2
| T ( j ) | 0
1 Phase response:  ( j )   tan 1 ( / 0 )
in dB: 20 log | T ( j ) | 20 log
1  ( / 0 ) 2  ( j 0)  0
20 log | T ( j 0) | 0 dB  ( j0 )  45
20 log | T ( j0 ) | 3 dB  ( j)  90

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6-14
 Frequency Response of LP Network (cont.)
 Magnitude Response | T ( j ) |
1
1  ( / 0 )2

 Phase Response  ( j )   tan 1 ( / 0 )

tan 1 (0.1)  5.71

tan 1 (10)  84.29

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 Frequency Response of LP Network (cont.)
 Example

R=1k, C=0.01 F
1 1
-3dB  =100krad/sec and f-3dB  =15.9kHz
RC 2 RC

0 0

X: 1.589e+004
-10
-10 Y: -3.002

-20
-20
-30
Magnitude (dB)

-30

Phase (deg)
X: 1.592e+004
-40 Y: -45.01
-40
-50
-50
-60

-60
-70

-70 -80

-80 0 2 4 6 8
-90
0 2 4 6 8
10 10 10 10 10 10 10 10 10 10
Frequency (Hz) Frequency (Hz)

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6-16
 Frequency Response of High-Pass Network
 Phasor Analysis
IC 1/jC According to voltage divider rule, the transfer function is
Vo R j RC
+ + T ( j )     T ( j ) 
Vi R Vo Vi R  1 1  j RC
-  jC
where
 RC
T ( j ) 
1  ( RC ) 2
  90  tan 1 ( RC )

vi (t )  V1 cos(t )  Vi  V10
 RC V1 ( RC )
Vo  V1   vo (t )  cos(t   )
1  ( RC ) 2
1  ( RC ) 2

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6-17
 Frequency Response of LP Network (cont.)

Vo j ( / 0 ) 1
T ( j )   , where 0  (3dB frequency).
Vi 1  j ( / 0 ) RC

 / 0
Magnitude response: | T ( j ) |
1  ( / 0 ) 2
| T ( j 0) | 0
| T ( j0 ) | 1/ 2
| T ( j ) | 1
1 Phase response:  ( j )  90  tan 1 ( / 0 )
in dB: 20 log | T ( j ) | 20 log
1  (0 /  ) 2  ( j 0)  90
20 log | T ( j0 ) | 3 dB  ( j0 )  45
20 log | T ( j) | 0 dB  ( j )  0

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6-18
 Frequency Response of HP Network (cont.)
 Magnitude Response | T ( j ) |
1
1  (0 /  ) 2

 Phase Response  ( j )  90  tan 1 ( / 0 )

Shu-Chuan Huang
6-19
 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Reading assignment: Appendix F
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers

Shu-Chuan Huang
6-20
 Transfer Functions
 s-Domain Analysis
Element Impedance Admittance
R R 1/R
L sL 1/ sL
C 1/ sC sC
am s m  am-1s m-1   a0
T ( s) 
s n  bn-1s n-1   b0
n: order of the network (n  m) For physical frequencies,
( s  z1 )( s  z2 ) ( s  zm ) T ( j )  T ( s ) s  j
T ( s )  am
( s  p1 )( s  p2 ) ( s  pn )
zeros: z1 , z2 , , zm
poles: p1 , p2 , , pn
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 Example
 Find the poles and zeros and sketch the Bode plots for
magnitude and phase for the following transfer function.
10 s
T (s) 
(1  s /10 2 )(1  s /105 )

10 j
T ( j ) 
(1  j /102 )(1  j /105 )
Magnitude:
10
| T ( j ) |
1  ( /10 2 ) 2 1  ( /105 ) 2
20 log | T ( j ) | 20  20 log   20 log 1  ( /10 2 ) 2  20 log 1  ( /105 ) 2
Phase:
 
  90  tan 1  tan 1
102 105
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 Example (cont.)
 Bode Plot of the Typical Magnitude Term

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 Example (cont.)
 Bode Plot of the Typical Phase Term

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 Example (cont.)
 Magnitude response

20log | T ( j ) | 20  20log   20log 1  ( /102 ) 2  20log 1  ( /105 ) 2

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 Example (cont.)
 Phase response
 
  90  tan 1  tan 1
102 105

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 Amplifier Transfer Function
 Capacitively Coupled Common-Source Amplifier

Bandwidth: f H - f L
Midband gain: AM

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 Amplifier Transfer Function (cont.)
 Gain function

A  s   AM FL  s  FH  s 
 A  s   AM , for LL  
HH

 AL  s   AM FL  s  , for high-frequency band

 AH  s   AM FH  s  , for low-frequency band

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 Amplifier Transfer Function (cont.)
 Direct-Coupled (dc) Amplifier

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 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 Reading assignment: Section 9.1
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers

Shu-Chuan Huang
6-30
 Determine Lower 3-dB Frequency
 Dominant –Pole Approximation

FL  s  
 s  Z 1  s  Z 2  s  
ZnL

 s  P1  s  P 2  s  
PnL

If P1  P 2 , Pn ,L

the pole at s  P1 is the dominant pole.

s
 FL  s  
s  P1
 L  P1

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Determine Lower 3-dB Frequency (cont.)
 Non-dominant –Pole Approximation

For simpliciy , FL  s  
 s  Z 1  s  Z 2 
 s  P1  s  P 2 
 FL  j  
2   2
  z21  2   z22 
 2
 P21  w2  P2 2 
1
By definition, at   L , FL 
2

2
1 L   z1 L   z 2 
2 2 2 2


2 L2  P21 L2  P2 2 

1  1/ L2  z21   z22   1/ L4  z21 z22 

1  1/ L2 P21  P2 2   1/ L4 P21P2 2 

 L  P21  P2 2  2 z21  2 z22

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 Example
The low-frequency response of an amplifier is characterized by the
following transfer function. Determine its 3-dB frequency, approximately.

s  s  10 
FL  s  
 s  100  s  25

P1 =100 rad/sec, P 2 =25 rad/sec,

Z1 =0 rad/sec, Z2 =10 rad/sec

Use dominant-pole approximation.

 L  P1 =100 rad/sec

A better estimate :
L  1002  252  2 102  102 rad/s

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 Short-Circuit Time Constants
 Approximate determination of L

FL  s  
 s  Z 1  s  Z 2  s    s
ZnL
nL
 d1s nL 1 
 s  P1  s  P 2  s   s
PnL
nL
 e1s nL 1 
 e1  P1  P 2   PnL
 As shown in Gray and Searle (1969), the exact value of e1 can be
obtained by analyzing the amplifier low-frequency circuit,
considering the various capacitors one at a time (Ci) while replacing
all other capacitors with short circuit, and also reduce the input signal
to zero, and determine the resistance Ris seen by Ci.
nL
1
e1  
i 1 Ci Ris
 If P1 is dominant,
1
L  P1  
i Ci Ris

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 Low-Frequency Response of CS Amplifier
 Determine Vo/Vsig.

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Low-Frequency Response of CS Amplifier (cont.)
 Determine Vg/Vsig.

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Low-Frequency Response of CS Amplifier (cont.)
 Determine Id/Vg.

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Low-Frequency Response of CS Amplifier (cont.)
 Determine Vo/Id.

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Low-Frequency Response of CS Amplifier (cont.)
 Determine the 3-dB Frequency fL.

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 Low-Frequency Response of CS Amplifier
 Determine L using Short-Circuit Time Constants
1. Set the input signal Vsig =0.
2. Consider the capacitors one at a time. That is, while considering capacitor Ci,
set all the other capacitors to infinite values (i.e., replace them with short
circuits—hence the name of the method).
3. For each capacitor Ci, find the total resistance Ri. seen by Ci. This can be
determined either by inspection or by replacing Ci with a voltage source Vx,
and finding the current Ix drawn from Vx; Ri ≡ Vx / Ix.
4. Calculate the 3-dB frequency fL, using 1 n 1
(9.13) f L 
2
C R
i 1 i i

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6-40
 Exercise 9.1
A CS amplifier has Cc1=Cc2=Cs=1F, RG=10M, RD=RL=RS=10k, Rsig=100k,
and gm=2mA/V. Find AM, fp1, fp2, fp3, fz and fL.

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 Example 9.1
We wish to select appropriate values for the coupling capacitors Cc1 and Cc2 and
the bypass capacitor Cs for a CS amplifier for which RG=4.7M, RD=RL=15k,
Rsig=100k, and gm=1mA/V. It is required to have fL at 100Hz and that the nearest
break frequency be at least a decade lower.

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 Low-Frequency Response of CE Amplifier

Figure 9.9 (a) A discrete-circuit common-emitter amplifier. (b) Equivalent circuit of the amplifier in (a).

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Low-Frequency Response of CE Amplifier (cont.)
 Applying the Method of Short-Circuit Time
Constants
(9.14) RC1   RB r   Rsig
(9.15)  C1  CC1 RC1
 RB Rsig 
(9.16) RCE  RE  re  
   1 
(9.17)  CE  CE RCE

(9.18) RC 2  RC  RL
(9.19)  C 2  CC 2 RC 2
L 1  1 1 1 
(9.20) f L    + + 
2 2  CC1 RC1 CE RCE CC 2 RC 2 
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 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 Reading assignment: Section 9.2
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers

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6-45
 MOS High-Frequency Model
 Gate Capacitive Effect
 The gate electrode (polysilicon) forms a parallel-plate
capacitor with the channel, with the oxide layer serving
as the capacitor dielectric.

C1  WL COX

 Overlap capacitance
Typically, LOV=0.05 to 0.1L.

C3  C4  COV  WLOV COX

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MOS High-Frequency Model (cont.)
 Triode region

Cgs  12 WLCOX  COV

Cgd  12 WLCOX  COV

 Saturation region

Cgs  23 WLCOX  COV

Cgd  COV

 Cut-off region

C gs  C gd  COV
C gb  WLCOX

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 MOS High-Frequency Model (cont.)
 Junction Capacitance
Csb 0
Csb 
1  VVSB0
(Csb 0 : Csb at zero body source bias
VSB : magnitude of the reverse-bias voltage
V0 : junction built-in voltage (0.6 to 0.8V))
Cdb 0
Cdb 
1  VVDB0
(Cdb 0 : Cdb at zero body source bias
VDB : magnitude of the reverse-bias voltage)

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6-48
 MOSFET Unity-Gain Frequency (fT)
 Short-Circuit Current Gain
I o  g mVgs - jCgdVgs
 g mVgs
Ii
Vgs 
j (Cgs  Cgd )
Io gm

Ii j (Cgs  Cgd )
 Unity-Gain Frequency
Io gm gm gm
  1 T  (rad/sec) and fT  (Hz)
Ii jT (Cgs  Cgd ) (Cgs  Cgd ) 2 (Cgs  Cgd )

2 1.5 nVOV
For C gs  C gd and C gs  WLCOX , fT  .
3 2 L 2

Shu-Chuan Huang
6-49
 BJT Internal Capacitances
 Base-Charging or Diffusion Capacitance Cde
 Minority-carrier charge stored in the base region in the
active mode
W2
Qn  iC   F iC
2 Dn
 Forward base-transit time: the average time a charge carrier
spends in crossing the base.
W2
F 
2 Dn
 Small-signal diffusion capacitance

dQn di I
Cde    F C   F gm   F C
dvBE dvBE VT

Shu-Chuan Huang
6-50
 BJT Internal Capacitances (cont.)
 Base-Emitter Junction (Depletion) Capacitance Cje
C je 0
C je 
(1  VVEB0 e ) m
C je 0 : C je at zero body source bias
V0e : EBJ built-in voltage (typically, 0.9V)
m: grading coefficient of the EBJ ((typically, 0.5)

 EBJ is forward biased in the active mode, and the above

equation does not prove an accurate prediction. One
typically used an approximate value, i.e.

C je  2C je 0

Shu-Chuan Huang
6-51
 BJT Internal Capacitances (cont.)
 Overall Emitter-Base Capacitance C
C  Cde  C je

 Collector-Base Junction (Depletion) Capacitance C

C 0
C 
(1  VVCB
0C
) m

C 0 : C at zero body source bias

V0C : CBJ built-in voltage (typically, 0.75V)
m: grading coefficient of the EBJ ((typically, 0.2-0.5)

C  C

Shu-Chuan Huang
6-52
 BJT High-Frequency Model

 rx (typically, a few tens of ohms) models the resistance of

the silicon material of the base region between the base
terminal B and a fictitious internal base terminal B’.
rx  r

Shu-Chuan Huang
6-53
 BJT Cutoff Frequency
 CE Short-Circuit Current Gain hfe

I c  ( g m - jC )V  g mV 0

h fe 
Ib 1  j (C  C )r
V 
1/ r  j (C  C ) 0 : low-frequency value of 
Ic gm g m r
h fe   
I b 1/ r  j (C  C ) 1  j (C  C ) r

Shu-Chuan Huang
6-54
 BJT Cutoff Frequency (cont.)
 Bode plot for |hfe|

unity-gain bandwidth:
0
h fe  1
1  jT (C  C )r

0
 1
jT (C  C )r

0 gm
T  
1 (C  C )r C  C
3-dB frequency:  
(C  C )r and fT 
gm
2 (C  C )
Note that T  0 . 2nVT
For C  C and C  Cde , fT  .
2 WB2
Shu-Chuan Huang
6-55
 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Reading assignment: Section 9.4
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers

Shu-Chuan Huang
6-56
 Determine Higher 3-dB Frequency
 Dominant –Pole Approximation

FH  s  
1  s / Z 1 1  s / Z 2  1  s /  
ZnH

1  s / P1 1  s / P 2  1  s /  
PnH

If P1 P 2 , Pn , H

the pole at s  P1 is the dominant pole.

1
 FH  s  
1  s / P1
 H  P1

 Non-dominant –Pole Approximation

1 1 2 2
H  1/    
P21 P2 2 Z21 Z2 2
Shu-Chuan Huang
6-57
 Example 9.7
Example: The high-frequency response of an amplifier is characterized by
the following transfer function. Determine its 3-dB frequency,
approximately.
1  s /105
FH  s  
1  s /104 1  s / 4 104 
P1 =104 rad/sec, P 2 =4 104 rad/sec,
Z1 =  105 rad/sec, Z2 = rad/sec

Use dominant-pole approximation.

H  P1 =104 rad/sec

A better estimate,
1 1 2
H  1/    9800 rad/s
10 8
16 10 10
8 10

Shu-Chuan Huang
6-58
 Open-Circuit Time Constants
 Approximate determination of H

FH  s  
1  s / Z 1 1  s / Z 2  1  s /    1  a s  a s
ZnH 1 2
2
  anH s nH
1  s / P1 1  s / P 2  1  s /   1  b s  b s
PnH 1 2
2
  bnH s nH
1 1 1
 b1     .
P1 P 2 Pn H
 As shown in Gray and Searle (1969), the exact value of b1 can be
obtained by analyzing the amplifier high-frequency circuit,
considering the various capacitors one at a time (Ci) while replacing
all other capacitors with open circuit, and also reduce the input signal
to zero, and determine the resistance Rio seen by Ci. n
b1   Ci Rio
H

i 1
 If P1 is dominant,
1  
b1   H  1/  Ci Rio 
P1  i 

Shu-Chuan Huang
6-59
 Example
The following figure shows the high-frequency equivalent circuit of a
common-source FET amplifier. The amplifier is fed with a signal
generator having a resistance Rsig. Resistance Rin is due to the biasing
network. Resistance RL’ is the parallel equivalent of the load resistance
RL, the drain resistance RD, and FET output resistance ro. Capacitance Cgs
and Cgd are the FET internal capacitance. For Rsig=100 k, Rin=420 k,
Cgs=Cgd=1 pF, gm=4 mA/V, and RL’=3.33 k, find the midband voltage
gain, AM=Vo/Vi, and the upper 3-dB frequency, fH.

Shu-Chuan Huang
6-60
 Example (cont.)
1. Determine the midband gain.
Assume all the capacitors are open circuits.

Shu-Chuan Huang
6-61
 Example (cont.)
2. Determine the upper 3-dB frequency.
 Cgs

 Cgd

Shu-Chuan Huang
6-62
 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 Reading assignment: Section 9.3.3
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers

Shu-Chuan Huang
6-63
 Miller’s Theorem
 Miller Equivalent Circuit

1 1 1
Y , Y1  , Y2  Z1 
Z
Z Z1 Z2 Y1  (1  K )Y (1  K )
I1  (V1  V2 )Y  V1 (1  K )Y  V1Y1 1 Z
Y2  (1  )Y Z2 
1 K 1
I 2  (V2  V1 )Y  V2 (1  )Y  V2Y2 (1  )
K K

Shu-Chuan Huang
6-64
 Example 9.5
The following figure shows an ideal voltage amplifier having a gain of -100
V/V with an impedance Z connected between its output and input
terminals. Find the Miller equivalent circuit when Z is (a) a 1-M
resistance, and (b) a 1-pF capacitance. In each case, use the equivalent
circuit to determine Vo/Vsig.

Shu-Chuan Huang
6-65
 Example 9.5 (cont.)
a) Z is a 1-M resistance.

Shu-Chuan Huang
6-66
 Example 9.5 (cont.)
b) Z is a 1-pF capacitance.

The multiplication of a feedback capacitance by (1 - K)

is referred to as Miller multiplication or Miller effect.
Shu-Chuan Huang
6-67
 Example
Use Miller’s theorem to determine the upper 3-dB frequency, fH,
for example given in p. 6-58.

Shu-Chuan Huang
6-68
 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 Reading assignment: Section 9.5
 High-Frequency Response of Source and Emitter Followers

Shu-Chuan Huang
6-69
 High-Frequency Response of CG Amplifier

Figure 9.26 (a) The common-gate amplifier with the transistor internal capacitances shown. A load
capacitance CL is also included. (b) Equivalent circuit of the CG amplifier with the MOSFET replaced with
its T model.

Shu-Chuan Huang
6-70
High-Frequency Response of CG Amplifier (cont.)

 Neglecting ro.
 Determining resistance Rgs 1
(9.94) f P1 
 1 
seen by Cgs 2 Cgs  Rsig 
 g m 

1
(9.95) f P 2 
2 (C gd  CL ) RL
 1 
(9.96)  gs  Cgs  Rsig   1/ 2 f P 2
 Determining resistance Rgd  g m 

seen by (CL +Cgd) (9.97)  gd  (Cgd  CL ) RL  1/ 2 f P1

 1 
(9.98)  H  Cgs  Rsig   (C gd  CL ) RL
 g m 

1  1 1 
(9.99) f H  1   
2 H  f P1 f P 2 
Shu-Chuan Huang
6-71
High-Frequency Response of CG Amplifier (cont.)
 Including ro.
 Determining resistance Rgs seen by Cgs

(9.100) Rgs  Rsig Rin

r0  RL r0  RL
(9.101) Rin  
1  g m ro g m ro
(9.102) Rgd  RL Ro
(9.103) Ro  ro  Rsig  g m ro Rsig
(9.104)  H   gs   gd
1
(9.105) f H 
2 H
Shu-Chuan Huang
6-72
High-Frequency Response of CG Amplifier (cont.)
 Including ro.
 Determining resistance Rgd seen by (CL +Cgd)

(9.100) Rgs  Rsig Rin

r0  RL r0  RL
(9.101) Rin 
1  g m ro g m ro
(9.102) Rgd  RL Ro
(9.103) Ro  ro  Rsig  g m ro Rsig
(9.104)  H   gs   gd
1
(9.105) f H 
2 H
Shu-Chuan Huang
6-73
 High-Frequency Response of MOS Cascode
Amplifier

Figure 9.28 The cascode circuit with the various transistor capacitances indicated.

Shu-Chuan Huang
6-74
High-Frequency Response of MOS Cascode Amplifier
(cont.)

 Determining the 3-dB frequency fH by the open-

circuit time-constants method:
1. Capacitance Cgs1 sees a resistance Rsig.
2. Capacitance Cgd1 is the gate-to-drain capacitance of the
CS amplifier Q1; thus it sees a resistance Rgd1 which can
be obtained by adapting the formula in Eq. (9.85),
(9.106) Rgd 1  (1  g m1Rd 1 ) Rsig  Rd 1
where Rd!, the total resistance at D1, is given by the
parallel equivalent of the resistance looking into the drain
of Q1 (ro1) and the resistance looking into the source of
Q2 (Rin2), thus
ro 2  RL
(9.107) Rd 1  ro1 Rin 2  ro1
g m 2 ro 2
Shu-Chuan Huang
6-75
High-Frequency Response of MOS Cascode Amplifier
(cont.)

3. Capacitance (Cdbl + Cgs2) sees a resistance Rd1.

4. Capacitance (CL + Cgd2) sees a resistance (RL||Ro) where
Ro, the output resistance of the cascode amplifier, is given
by
Ro  ro 2  ro1  ( g m 2 ro 2 )ro1

With the resistances determined, the effective time constant

rH can be computed as
(9.108)  H  Cgs1 Rsig  Cgd 1 (1  g m1Rd 1 ) Rsig  Rd 1 
 (Cdb1  Cgs 2 ) Rd 1  (CL  Cgd 2 )( RL Ro )
and the 3-dB frequency fH as
1
fH 
2 H
Shu-Chuan Huang
6-76
High-Frequency Response of MOS Cascode Amplifier
(cont.)

 Design Insight and Trade-Offs

(9.109)  H  Rsig C gs1  C gd 1 (1  g m1 Rd 1 )   Rd 1 (C gd 1  Cdb1  C gs 2 )

 ( RL Ro )(CL  C gd 2 )
(9.110)  H  (CL  C gd 2 )( RL Ro )
1
(9.111) f H 
2 (CL  C gd 2 )( RL Ro )
1 gm
(9.112) f1 
2 CL  Cgd 2

Shu-Chuan Huang
6-77
Comparison

Figure 9.29 Effect of cascoding on gain and

bandwidth in the case Rsig = 0. Cascoding can
increase the dc gain by the factor A0 while
keeping the unity-gain frequency constant. Note
that to achieve the high gain, the load resistance
must be increased by the factor A0.

Shu-Chuan Huang
6-78
 Contents
 Phasor Representation
 Frequency Responses of First-Order RC Networks
 Transfer Function and Bode Plot
 Low-Frequency Response of CS and CE Amplifiers
 High-Frequency Small-Signal Models
 High-Frequency Response of CS and CE Amplifiers
 Miller’s Theorem
 High-Frequency Response of CG and Cascode Amplifiers
 High-Frequency Response of Source and Emitter Followers
 Reading assignment: Section 9.6

Shu-Chuan Huang
6-79
High-Frequency Response of Bipolar Cascode Amplifier

Figure 9.30 Determining the frequency response of the BJT cascode amplifier. Note that in
addition to the BJT capacitances Cπ and Cμ, the capacitance between the collector and the
substrate Ccs for each transistor are included.

Shu-Chuan Huang
6-80
 The Source-Follower Case

Figure 9.31 (a) A directly coupled source follower without the bias detail; (b) high-frequency
equivalent circuit of the source follower

Shu-Chuan Huang
6-81
 Source-Follower Case (cont.)
 Obtaining the Transfer Function V0(s)/Vsig(s)

1
(9.113) RL  RL ro
g mb

(9.114) Vsig  I i Rsig  Vs  Vo

(9.115) Vsig  1  s(Cgs  Cgd ) Rsig  Vgs  1  sCgd Rsig  Vo
Shu-Chuan Huang
6-82
 Source-Follower Case (cont.)

(9.117)
Vo
( s )  AM
1 Z  s

Vsig 1  b1s  bs s 2
RL g m RL
where (9.118) AM  
RL  g1
g m RL  1
m

(9.119) Z  g m / Cgs
 Cgs   Cgs  CL 
(9.120) b1   Cgd   Rsig    RL
 g m RL  1   g m RL  1 
(Cgs  Cgd )CL  C gs C gd
(9.121) b2  Rsig RL
g m RL  1
Shu-Chuan Huang
6-83
 Source-Follower Case (cont.)

gm
(9.122) T 
C gs  C gd
 s  s 
(9.123) 1  b1s  b2 s  1 
2
1  
  P1   P2 

  1
(9.124) f H f P1
2 b1
1 1 2
(9.125) f H  1 2
 2  2
f P1 f P 2 f P1

Shu-Chuan Huang
6-84
 Source-Follower Case (cont.)

2
1 s s
(9.126) 1  b1s  b2 s 2  1   2
Q 0 0
1 g m RL  1
(9.127) 0  
b2 Rsig RL  C gs  C gd  CL  C gs Cgd 

b2 g m RL  1  Cgs  Cgd  CL  Cgs Cgd  Rsig RL

(9.128) Q  
b1 Cgs  Cgd ( g m RL  1)  Rsig  (C gs  CL ) RL

Shu-Chuan Huang
6-85
 Source-Follower Case (cont.)

Figure 9.32 (a) A pair of complex-conjugate poles with the definition of ωo and Q indicated.
(b) Magnitude response of a source (or emitter) follower for different values of the parameter
Q. Note that the response is normalized relative to AM.

Shu-Chuan Huang
6-86
 The Emitter-Follower Case

Figure 9.33 (a) Emitter follower. (b) High-frequency equivalent circuit.

Shu-Chuan Huang
6-87
 Emitter-Follower Case (cont.)

Figure 9.33 (c) Simplified equivalent circuit. (d) Transfer function.

Shu-Chuan Huang
6-88