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Design of Analog CMOS Integrated Circuits: (1st Edition)
Design of Analog CMOS Integrated Circuits: (1st Edition)
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(1st Edition)
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Chapter 12, Problem 6P Bookmark Show all steps: OFF
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Step 1 of 7
(a)
My Textbook Solutions
Refer to Figure 12.8 (b) in the textbook.
Consider the expression for the gate oxide capacitance per unit area.
…… (1)
Here,
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is the permittivity of the oxide, which is and is the gate oxide thickness.
1st Edition 14th Edition 3rd Ed
Substitute for in equation (1). View all solutions
…… (2)
Comment
Step 2 of 7
…… (3)
Here,
Consider the source drain side diffusion in the MOSFET, so that the channel length of the device
(L) is equal to .
…… (4)
Here, is the channel length and is the source/drain side diffusion length.
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7/1/22, 5:36 PM Solved: Chapter 12 Problem 6P Solution | Design Of Analog CMOS Integrated Circuits 1st Edition | Chegg.com
Comment
Step 3 of 7
…… (5)
Here,
is the input voltage, is the width-length ratio, is the threshold voltage, is the
oxide capacitance, t is the time, is the mobility of electrons, which has standard value as
Comment
Step 4 of 7
…… (6)
Here,
Comment
Step 5 of 7
(b)
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7/1/22, 5:36 PM Solved: Chapter 12 Problem 6P Solution | Design Of Analog CMOS Integrated Circuits 1st Edition | Chegg.com
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Step 6 of 7
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7/1/22, 5:36 PM Solved: Chapter 12 Problem 6P Solution | Design Of Analog CMOS Integrated Circuits 1st Edition | Chegg.com
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