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00000005981LF-000
2N2222A
EOS Power SEMICONDUCTOR AG
DIOTEC

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Arrow
Arrow Electronics,
Electronics, Inc
Verical Division
9201 East Dry Creek Road
P.O. Box 740970
Centennial,
Los Angeles, CO 80112
CA 90074-0970

This coversheet was created by Verical, a division of Arrow Electronics, Inc. (“Verical”). The attached document was created by the part supplier,
not Verical, and is provided strictly 'as is.' Verical, its subsidiaries, affiliates, employees, and agents make no representations or warranties
regarding the attached document and disclaim any liability for the consequences of relying on the information therein. All referenced brands,
product names, service names, and trademarks are the property of their respective owners.
2N2222A

2N2222A IC = 600 mA VCEO = 40 V

General Purpose NPN Transistors
Universal-NPN-Transistoren
Version 2017-05-30
Typical Applications
Signal processing,
TO-92 (10D3)
Switching, Amplification
Commercial grade 1)
Features
General Purpose
C BE Compliant to RoHS, REACH,
Conflict Minerals 1)
16
hFE ~ 200 Ptot = 625 mW
Tjmax = 150°C
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Besonderheiten
RoHS
Universell anwendbar
Konform zu RoHS, REACH,
Pb Konfliktmineralien 1

WE

V
EL
EE
9

Mechanical Data 1) Mechanische Daten 1)

18

Taped in ammo pack Gegurtet in Ammo-Pack

4000
(Raster 2.54) (Raster 2.54)
2 x 2.54
Weight approx. 0.18 g Gewicht ca.
Case material UL 94V-0 Gehäusematerial
Dimensions - Maße [mm]
Solder & assembly conditions 260°C/10s Löt- und Einbaubedingungen
MSL N/A

Recommended complementary PNP transistors

2N2907A
Empfohlene komplementäre PNP-Transistoren

Maximum ratings 2) Grenzwerte 2)

Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open VCEO 75 V
Collector-Base-voltage - Kollektor-Basis-Spannung E open VCBO 40 V
Emitter-Base-voltage - Emitter-Basis-Spannung C open VEBO 6V
Power dissipation – Verlustleistung Ptot 625 mW 3)
Collector current – Kollektorstrom (dc) IC 600 mA
Base current – Basisstrom IB 800 mA

Junction temperature – Sperrschichttemperatur Tj -55...+150°C

Storage temperature – Lagerungstemperatur TS -65…+150°C

Characteristics Kennwerte
Tj = 25°C Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
VCB = 60 V ICB0 – – 10 nA
Collector saturation voltage – Kollektor-Sättigungsspannung
IC = 150 mA, IB = 15 mA 1) VCEsat – – 0.3 V
IC = 500 mA, IB = 50 mA 1) VCEsat – – 1V

1 Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2 TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
3 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

© Diotec Semiconductor AG http://www.diotec.com/ 1

 2N2222A

Characteristics Kennwerte
Tj = 25°C Min. Typ. Max.
DC current gain – Kollektor-Basis-Stromverhältnis
IC = 0.1 mA, VCE = 10 V 35 – –
IC = 1 mA, VCE = 10 V 50 – –
IC = 10 mA, VCE = 10 V hFE 75 – –
IC = 150 mA, VCE = 10 V 1) 100 – 300
IC = 500 mA, VCE = 10 V 1) 40 – –
Gain-Bandwidth Product – Transitfrequenz
IC = 20 mA, VCE = 20 V, f = 100 MHz fT 250 MHz – –
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz CCB0 – – 8 pF
Emitter-Base Capaciance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC =ic = 0, f = 1 MHz CEB0 – – 30 pF
Thermal resistance junction to ambient
RthA < 200 K/W 2)
Wärmewiderstand Sperrschicht – Umgebung

120
[%]

100

80

60

40

20
Ptot
0
0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)

Disclaimer: See data book page 2 or website

Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet

1 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden

2 http://www.diotec.com/ © Diotec Semiconductor AG