Si4401BDY

Vishay Siliconix

P-Channel 40-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) • Halogen-free According to IEC 61249-2-21
Definition
0.014 at VGS = - 10 V - 10.5
- 40 40 • TrenchFET® Power MOSFET
0.021 at VGS = - 4.5 V - 8.7
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC

SO-8

S 1 8 D S
S 2 7 D

S 3 6 D
G
G 4 5 D

Top View

Ordering Information: Si4401BDY-T1-E3 (Lead (Pb)-free) D

Si4401BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 40
V
Gate-Source Voltage VGS ± 20
TA = 25 °C - 10.5 - 8.7
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C - 8.3 - 5.9
Pulsed Drain Current IDM - 50 A
Continuous Source Current (Diode Conduction)a IS - 2.6 - 1.36
Avalanche Current IAS 30
L = 1 mH
Single Pulse Avalanche Energy EAS 45 mJ
TA = 25 °C 2.9 1.5
Maximum Power Dissipationa PD W
TA = 70 °C 1.85 0.95
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 36 43
Maximum Junction-to-Ambienta RthJA
Steady State 70 84 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 73140 www.vishay.com

S09-0866-Rev. D, 18-May-09 1
Si4401BDY
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 40 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 40 V, VGS = 0 V, TJ = 70 °C - 10
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 30 A
VGS = - 10 V, ID = - 10.5 A 0.011 0.014
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 8.7 A 0.0165 0.021
Forward Transconductancea gfs VDS = - 15 V, ID = - 10.5 A 26 S
a VSD IS = - 2.7 A, VGS = 0 V - 0.74 - 1.1 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 40 55
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 10.5 A 10 nC
Gate-Drain Charge Qgd 14
Gate Resistance Rg 1.4 2.8 4.2 Ω
Turn-On Delay Time td(on) 16 25
Rise Time tr VDD = - 15 V, RL = 15 Ω 15 25
Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 97 150 ns
Fall Time tf 47 75
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, dI/dt = 100 A/µs 35 55
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50 50

VGS = 10 V thru 4 V
40 40
I D - Drain Current (A)
I D - Drain Current (A)

30 30

20 20

TC = 125 °C
10 10
3V 25 °C
- 55 °C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 73140

2 S09-0866-Rev. D, 18-May-09
 Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.030 4500

4000
0.025
3500 Ciss
RDS(on) - On-Resistance (Ω)

C - Capacitance (pF)
0.020 3000
VGS = 4.5 V
2500
0.015
VGS = 10 V 2000

0.010 1500
Coss
1000 Crss
0.005
500

0.000 0
0 10 20 30 40 50 0 5 10 15 20 25 30 35 40

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

6 1.8
VDS = 15 V VGS = 10 V
ID = 10.5 A ID = 10.5 A
5 1.6
VGS - Gate-to-Source Voltage (V)

R DS(on) - On-Resistance

4 1.4
(Normalized)

3 1.2

2 1.0

1 0.8

0 0.6
0 5 10 15 20 25 30 35 40 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

50 0.05

0.04
R DS(on) - On-Resistance
IS - Source Current (A)

TJ = 150 °C
10 0.03 ID = 10.5 A

0.02
TJ = 25 °C

0.01

1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 73140 www.vishay.com

S09-0866-Rev. D, 18-May-09 3
Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8 30

0.6 25
VGS(th) Variance (V)

0.4 ID = 250 µA 20

Power (W)
0.2 15

0.0 10

- 0.2 5

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 10 - 2 10 - 1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power, Junction-to-Ambient

100

Limited by RDS(on)*

10
ID - Drain Current (A)

1 ms

10 ms
1

100 ms

1s
0.1
TC = 25 °C 10 s
Single Pulse
DC

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Safe Operating Area

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05
t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com Document Number: 73140

4 S09-0866-Rev. D, 18-May-09
 Si4401BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73140.

Document Number: 73140 www.vishay.com

S09-0866-Rev. D, 18-May-09 5
 Package Information
Vishay Siliconix

SOIC (NARROW): 8-LEAD

JEDEC Part Number: MS-012

8 7 6 5

E H

1 2 3 4

D h x 45
C
0.25 mm (Gage Plane)
A
All Leads

q 0.101 mm
e B A1 L
0.004"

MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498

Document Number: 71192 www.vishay.com

11-Sep-06 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SO-8

0.172
(4.369)
0.028
(0.711)
(6.248)

(3.861)
0.246

0.152
(1.194)
0.047

0.022 0.050
(0.559) (1.270)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index
Return to Index
APPLICATION NOTE

www.vishay.com Document Number: 72606

22 Revision: 21-Jan-08
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Revision: 01-Jan-2022 1 Document Number: 91000