GROUP 8

BIPOLAR JUNCTION TRANSISTOR

Garcesa, Yannah Lorraine F.

Seno, Aubrey C.
Tabiliran, Mark Jason R.
Tejada, Jomarie C.
Tubeo, Lance Nathan B.
Tumampil, Jasper S.
Ungad, Merham John H.

TOPICS TO BE COVERED:
 Constructions
 Types
 Operations
 Configurations
➔ Common Base Configuration
➔ Common Emitter Configuration
➔ Common Collector Configuration
 DC Biasing and Fixed Bias

 CONSTRUCTIONS (Tumampil)
BJT (Bipolar Junction Transistors)
- The bipolar junction transistor (BJT) was
named because its operation involves
conduction by two carriers: electrons and
holes in the same crystal. The first bipolar
transistor was invented at Bell Labs by
William Shockley, Walter Brattain, and
John Bardeen so late in 1947 that it was
not published until 1948.
- A Bipolar Junction Transistors or BJT is
used a 3 terminal semiconductor device
that is used for amplification and switching purpose.
- It is a current controlled device.

CONSTRUCTION OF BJT
BJT is Classified as:

PNP Transistor
A PNP transistor is a bipolar junction transistor constructed by
sandwiching an N-type semiconductor between two P-type
semiconductors.
NPN Transistors
An NPN transistor is the most commonly used bipolar
junction transistor, and is constructed by sandwiching a P-
type semiconductor between two N-type semiconductors.

JUNCTION

SYMBOL OF PNP AND NPN

DIODE ANALOGY

 TYPES (Tejada)

Types of Bipolar Junction Transistor

There are two types of bipolar junction transistors:
 PNP bipolar junction transistor
 NPN bipolar junction transistor

In PNP BJT, the n-type semiconductor is sandwiched

between the two p-type semiconductors. The two p-type
semiconductors act as emitter and collector respectively while the n-type semiconductor acts as a
base. This is shown in the figure below.
A PNP transistor receives positive voltage at the emitter
terminal. The positive voltage to the emitter allows
current to flow from the emitter to the collector, given
that there is negative current to the base (current flowing
out of the base to ground).

In NPN BJT, p-type semiconductor is sandwiched

between the two n-type semiconductors. The two n-
type semiconductors act as emitter and collector
respectively while the p-type semiconductor acts as a
base. This is shown in the figure below.
An NPN transistor receives positive voltage at the
collector terminal. This positive voltage to the collector
allows current to flow across from the collector to emitter,
given that there is a sufficient base current to turn the
transistor on.

 OPERATION (Tabiliran)
There are three operating regions of a bipolar junction transistor.

1) Active Region

- The Forward-active region occurs

when the transistor is in its active state
which allows the transistor to amplify the
voltage variations present on the base.

- The Reverse-active region occurs

when the transistor is in its active state but the maximum current gain in the
reverse active mode is much smaller than the forward active mode.

2) Saturation Region
 - The saturation region allows the transistor to conduct current from the emitter
to the collector.

3) Cut-off Region

- The Cutoff region is when the transistor is inactive due to minimal current
being passed through the transistor, which makes the transistor appear as an open
circuit.

CONFIGURATIONS

 COMMON BASE (Seno)

COMMON BASE CONFIGURATION

- In Common Base Configuration, the base terminal serves as a common terminal for both
input and output in a common base configuration.

APPLICATION

CURRENT GAIN
For a common base amplifier configuration, current gain, Ai is given as iOUT/iIN which itself is
determined by the formula IC/IE. The current gain for a CB configuration is called Alpha, (α).
Thus, the CB amplifier attenuates the current, with typical values of alpha ranging from between
0.980 to 0.995

CURRENT GAIN IN COMMON BASE CONFIGURATION

VOLTAGE GAIN

The voltage gain for the common base amplifier is the ratio of VOUT/VIN, that is the collector
voltage VC to the emitter voltage VE. In other words, VOUT = VC and VIN = VE.
Then we can say for a common base amplifier configuration that:

As IC/IE is alpha, we can present the amplifiers voltage gain as:

 COMMON EMITTER (Tubeo)

Common Emitter Configuration
Common Emitter of the BJT

is one of three basic single-stage bipolar-junction-transistor (BJT)

amplifier topologies, typically used as a voltage amplifier. It offers high
current gain (typically 200), medium input resistance and a high output
resistance.

Characteristics of the Common Emitter

Input Characteristics - The variation of emitter current (IB) with Base-Emitter voltage (VBE),
keeping Collector Emitter voltage(VCE) constant.
Output Characteristics - The variation of collector current (IC) with Collector-Emitter
voltage(VCE), keeping the base current(IB) constant.

Current Transfer Characteristics - The variation of collector current (IC) with the base current
(IB).

● A common emitter amplifier has a medium voltage gain.

● The common emitter amplifier has a high – power gain.
● The input and output have a 180-degree phase relationship.

The input and output resistors in the common emitter amplifier are medium.
Example Computation in Common Emitter Configuration

This how to get the Voltage Gain and Current Gain of

Common Emitter Configuration

Input Current = IB          Output Current = IC

Input Voltage = VBE     Output Voltage = VCE

VBE = 20 mV           VCE = 400 mV

IB = 2 mA                  IC = 15 mA
Av =   VCE/VBE = 400 mV/20 mV = 20 mV

This is how to get the Ic or Output Current:

RL = 1.2 k ohms   VRE = 1 V
VCC = 12 V

This is how to get IE or Emitter Current:

IC = 4.58 mA, IB = 45.8 µA

This is how to get B or BETA:

 COMMON COLLECTOR (Ungad)

Common Collector Amplifier

Common Collector Amplifiers produce an

output voltage across its emitter load which is
in-phase with the input signal.

The Common Collector Amplifier is another

type of bipolar junction transistor (BJT)
configuration where the input signal is applied
to the base terminal and the output signal taken
from the emitter terminal. This type of
configuration is called Common Collector, (CC)
because the collector terminal is effectively
“grounded” or “earthed” through the power supply.
The common collector or grounded collector configuration is generally used where a high
impedance input source needs to be connected to a low impedance output load requiring a
high current gain. Consider the common collector amplifier circuit below.

Common Collector Amplifier using an NPN Transistor

 Resistors R1 and R2 form a simple voltage divider network used to bias the NPN
transistor into conduction. Since this voltage divider lightly loads the transistor, the base
voltage VB can be easily calculated by using the simple voltage divider.

Voltage Divider Network

Voltage Divider circuits are used to produce different voltage levels from a common
voltage source, but the current is the same for all components in a series circuit.

Sample Question:

 A common collector amplifier is

constructed using an NPN bipolar
transistor and a voltage divider biasing
network. If R1 = 5k6Ω, R2 = 6k8Ω and
the supply voltage is 12 volts. Calculate
the values of: VB, VC and VE, the
emitter current IE, the internal emitter
resistance r’e and the amplifiers voltage
gain AV when a load resistance of 4k7Ω
is used. Also draw the final circuit and
corresponding characteristics curve with
load line.

 DC BIASING AND FIXED BIAS (Garcesa)

 DC BIASING

Is the process of setting a transistors DC operating

voltage or current conditions to the correct level so that
any AC input signal can be amplified correctly by the
transistor.

Fixed Bias (Base Resistor Bias)

 The simplest transistor dc bias configuration.

 A type of bias where base current is maintained

constant for a given Vcc by using a fixed
resistor. so the operating point must remain
fixed. using these two resistors and fixed
current, initial operating point has to be found.

 Solve the circuit using KVL.

1st step: Locate capacitors and
replace them with an open
circuit.

2nd step: Locate 2 main loops

which are:
BE Loop CE Loop
DC Analysis

 Applying KVL to the input loop:

 From the above equation, deriving for IB, we get,

 The selection of a Rb sets the level of base current for the operating point.
 Applying KVL for the output loop:
VCC = IcRc + Vce
 Thus, 

 In circuits where emitter is grounded,

Vce = Ve
Vbe = Vb

Problem: 

*Given - Ib,
Ic, Vce and Vcc =
12v, Rb = 240 kΩ,
Rc =      2.2 kΩ and β
= 75.
*Determine the following operating point.

*Equation for the input loop is:

Ib = [Vcc - Vbe] / Rb where Vbe = 0.7V
*Thus substituting the other given values in the
equation, we get
Ib = 47.08µA
Ic = βIb = 3.53mA
Vce = Vcc - IcRc = 4.23V

 When the transistor is biased such that Ib

is very high so as to make Ic very high
such that IcRc drop is almost Vcc and Vce
is almost 0, the transistor is in the active
region.
Icq = (Icsat/2)
REFERENCE:
BIPOLAR JUNCTION TRANSISTOR (BJT)
● Construction (Tumampil)
https://www.allaboutcircuits.com/textbook/semiconductors/chpt-2/bipolar-junction-transistors/
#:~:text=The%20bipolar%20junction%20transistor%20
https://www.youtube.com/watch?v=TJcQ5MovoR4&t=149
https://www.youtube.com/watch?v=O2IMbgUEpkI
● Types (Tejada)
Bipolar Junction Transistor: Definition, Construction, Types, Function, Application, and
FAQs (byjus.com)
Difference Between an NPN and a PNP Transistor (learningaboutelectronics.com)
● Operation (Tabiliran)
https://www.circuitbread.com/tutorials/different-regions-of-bjt-operation
https://byjus.com/physics/bipolar-junction-transistor/
https://eng.libretexts.org/Bookshelves/Materials_Science/
Supplemental_Modules_(Materials_Science)/Materials_and_Devices/
Bipolar_Junction_Transistor

CONFIGURATION
● Common Base (Seno)
https://semesters.in/characteristics-of-bipolar-junction-transistors-notes-for-electronics-
engineering-1st-year/
https://www.physics-and-radio-electronics.com/electronic-devices-and-circuits/transistors/
bipolarjunctiontransistor/commonbaseconfiguration.html#:~:text=The%20input%20signal%20is
%20applied,named%20as%20common%20base%20configuration

● Common Emitter (Tubeo)

https://byjus.com/physics/characteristics-of-a-transistor/
https://www.youtube.com/watch?v=KynKHr2cXgk

● Common Collector (Ungad)

https://www.electronics-tutorials.ws/amplifier/common-collector-amplifier.html

● DC BIASING AND FIXED BIAS (Garcesa)

https://semesters.in/bipolar-junction-transistor-fixed-base-biasing-electronics-engineering-notes-
1st-year/#:~:text=Fixed%20Base%20Biasing%20a%20Transistor%3A&text=In%20this
%20condition%2C%20a%20single,adjusted%20to%20the%20desired%20value