Working of Varactor Diode

While the reverse bias is applied to P-N junction, the width of depletion layer starts to increases.

Increasing magnitude of reverse voltage slowly enhances the width depletion layer increases

more. Hence, the depletion region develops Transition capacitance which is inversely

proportional to width of the depletion layer. Hence if we need the high magnitude of capacitance

the width needs to be small. If we need lower capacitance the width needs to be large for which

the reverse voltage applied must be high. In this way width can be controlled with applied

reverse voltage.

Working of Photo Diode

While the light is incident on the PN junction, covalent bonds are ionized. It results in generating

hole and electron pairs. Photocurrents are developed because of generation of electron-hole pairs.

Electron hole pairs are developed while photons of energy more than 1.1eV strike the diode.

When the photon is incident on the depletion region of diode, it strikes the atom with high

energy. It results in release of electron from atom structure. While the electron release, free

electrons and hole pair are produced. The depletion energy contains built-in electric field.

Because of electric field, electron-hole pairs start moving away from the junction. Hence, holes

move to anode and electrons move to the cathode for producing photocurrent.