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Electrically tunable all-optical diode in a one-dimensional photonic crystal

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Article  in  Applied Optics · May 2017

DOI: 10.1364/AO.56.004146

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Electrically tunable all optical diode in one-dimensional
photonic crystal structure
Kazem Jamshidi-Ghaleh* and Fatemeh Moslemi
Department of Physics, Azarbaijan Shahid Madani University, Tabriz, Iran
* Corresponding author email address: k-jamshidi@azaruniv.ac.ir
Received XX Month XXXX; revised XX Month, XXXX; accepted XX Month XXXX; posted XX Month XXXX (Doc. ID XXXXX); published XX Month XXXX

All optical diode (AOD) tunability with externally applied voltage in a one dimensional photonic crystal (1DPC) structure of
arrangement (BA)5/AgLiNbO3Ag/(AB)5 (AABB)5 is was investigated. It is an asymmetric hybrid Fabry-Perot resonator which is
composed of distributed Bragg reflector (DBR) segments (AB5) containing the linear (B layers) and nonlinear (A layers) optical
materials. The LiNbO3 (LNO) sandwiched with two pairs of the Ag layers is used employed as a defect. The electro-optical (EO)
effect and optical nonlinear response (Kerr effect) of LNO is considered. Linear transmittance (LT) spectrum, nonlinear
transmission (NT) curves and field distribution, for left to right (L-R) and right to left (R-L) incidents, at different applied
voltages are, graphically, illustrated. Results are shown that, with increaseing in the applied voltage, L-R and R-L NT curves
are deflecting, amplifying and compressing in comparison toof zero applied voltage. At negative voltages, because ofdue to
accumulationng of the EO and Kerr effects, variations are more sensitive. Electro-optical effect in LNO causes to tunability of
LT spectrum and Kerr effect in nonlinear layers dynamically tunes the optical bistability (OB) threshold. The results of this
study can be useful in designing the externally tunable basic elements for optoelectronic devices.
OCIS cods: 230.1150 All-optical devices; 160.5298 Photonic crystals; 230.2090 Electro-optical devices; 310.4165 Multilayer design
http://dx.doi.org/

even acousto-optical (EMTA) effects. Therefore, PC structures

1. Introduction
In recent years, possibility of engineering and controlling the
optical properties of the materials has provided shown their
ability of their more useful applications in optoelectronic devices.
A change in optical properties of a material will causes to
differdifferences in the responses of the electromagnetic waves
and can be seen in the optical transmission or reflection spectra.
Photonic crystal (PC) structures, introduced by Yablonovitch [1]
and John [2], are artificial structures which are consisting of
periodically arrangement of materials with different optical or
physical properties in one, two or three dimensions. Among
them, the 1DPC structure has been more attention, since given
that its production is feasible at any wavelength scale as well as
and the analytical and the numerical calculations are simple. The
most significant characteristics characterize of a PC structure is
the photonic band gap (PBG) [3], regions of the frequencies that
where the electromagnetic waves cannot propagate trough
through the structure. It is demonstrated shown that, the
properties of the PBG is depend on optical (refractive index) and
physical (thickness) parameters of the materials are used, angle
of light incident, state of polarization and structural
arrangement. Depending onof PC`s optical responses on
properties of materials, it provides possibility of external
tunability by employing using the electro, magneto, thermo or
1
are good candidate for designing of tunable all optical devices.
In During the last few years, most researches have
concentrated onin the design of basic elements necessary for all-
optical integrated circuit based on 1DPC structures. Among
them,; optical filters [4, 5], optical switching [6], all optical diodes
[7], and beam shapers [8, 9] can be mentioned. For
exampleinstance, if we insert a layer with different physical or
optical properties (which is called defect layer) than the other
layers of the PC structure, within the PBG will be appear some
narrow localized modes that are called defect modes. Theose
modes can be used employed as the band-pass optical filter [10,
11]. Appearance of defect mode is governed by the Bragg
condition and its peak frequency depends on optical path length.
Then, a change in physical or optical parameters of defect layer,
causes ato shift in the defect mode peak frequency. Therefore, if
we could to control the effective parameters by an external factor
such aslike electric or magnetic fields, temperature and etc., we
have can obtained the ability of tuning the defect mode. Such a PC
structure can be used as a tunable optical filter. Fortunately,
there are interesting optical materials (for example:such as
plasma media, liquid crystals, and EO materials and …) that
theirwith optical and physical properties that can be tuned by
applying one of the EMTA optical effects, externally. In general,
by using an external factor, it is possible to change the optical
path length or Bragg condition without distorting the PC
configuration which requires a lot of cost and time for
construction.
On the other hand, the optical properties of the materials is
depend on localized field intensity which is referred to as optical
nonlinearity. The nonlinear responses of the medium may be
yield to intensity dependency of the refractive index (Kerr effect)
and can induce some nonlinear phenomena such as optical
bistability (OB) [12]. In this case, the output intensity from the
medium is a strong nonlinear function of the incident intensity. It
might even displays a hysterics loop, which is used to manipulate
the photon's transportation. It is also is a promising way to
realize optical switching, a key component of integrated optics.
In our recent publication, we have investigated the electrical
tunability of the OB in 1DPC structure containing the nonlinear
nanocomposite defect layer [6]. In additionMoreover, it has wide
potential applications such aslike optical transistors, memory
elements, logical gates and all optical switches that can be used
to control the light by light [13, 14].
A nonlinear PC structure, with spatially asymmetric
configuration and anisotropic field intensity distribution inside
the layers for left and right side incidents, will be act as a device
that is called AOD [15]. For this structure, the incident
electromagnetic wave with a given frequency is permitted to pass
only from one side of the structure but not from the other side
not. Due to one-way transmission property, the AOD can be had
an important role in optical signal processing. For this, in recent
years, the methods forto constructing an AOD and possibility of
its tunability have been an attractive subject for researchers.
Various structures have been proposed to design an AOD based
on PC structures [16-21]. Among them, Zhukovsky proposed a
1DPC structure that, with perfect linear transmission, displays an
asymmetric electric field distribution and shows the AOD
performance with high efficiency [22]. This structure is
composed of two distinct parts with arrangement of S1S2, in
which, S1= (BA)n(AB)m is a Fabry-Perot interferometer composed
of DBR segments and S2= (AABB)k is a PC structure with doubled
period. The effect of the periodicity numbers n, m and k on optical
diode performance from this structure at normal incidents has
been studied [23]. Also, the effects of the incident angle and the
polarization state on AOD behaviour have been investigated [24].
It is noteworthy to mention that the DBR arrangement (AB)n with
linear-index materials is not an AOD. It can transmit a specified
frequency and block some other ones from both sides, but, AOD
transmits from only from one side and not from the other side. In
other words, AOD acts only at single frequency but DBR at multi-
frequencies.
In this study, for tuning the AOD behavior under externally
applied voltage, we have introduced the LNO layer sandwiched
with two pairs of Ag thin layers as a defect in Zhukovsky’s
structure with arrangement of (BA)5/AgLiNbO3Ag/(AB)5(AABB)
5. The external voltage washas applied via the Ag layers. With this
configuration, the optical properties of LNO would be depend not
only on intensity of the incident electric field, but also on
externally applied DC electric field. Hence, the EO and the Kerr
effects will provide the possibility of tuning the linear and
nonlinear transmittance spectra, respectively, in the proposed PC
structure. The results are shown that, the AOD efficiency can be
manipulated by applying the external voltage. The paper is
organized as follows: The proposed PC structure has introduced
in Section 2. The transfer matrix method, the optical and physical
parameters of the materials have also explained in this section.
To illustrate the tunability of the AOD efficiency with external
2
voltage, the numerical results have graphically presented in
Section 3. Finally, the results of the paper have summarized in
Section 4.
2. Model and Theory
Figure 1, shows the schematic of the proposed 1DPC structure
for electrically tuning of the AOD behaviour. The structure iwas
composed of asymmetric arrangement of (BA)5/AgLiNbO3Ag
/(AB)5(AABB)5. The materials and their parameters for A and B
layers were chosen as in Ref [16], where a "ramped index"
structure similar to DBR is studied. Amorphous polydiacetylene
9-BCMU was used for the A layers and TiO2 for the B layers. Their
linear refractive indexes are n0A=1.6 and n0B=2.7, respectively,
and the Kerr nonlinear coefficients are n2A=2×10-10 cm2/W and
n2B=2×10-14 cm2/W. It is seen that, the nonlinear coefficient of
TiO2 is four orders of magnitude smaller than that of
polydiacetylene 9-BCMU, then it is negligible. It should be noted
that, the refractive index of a nonlinear medium depends on
electric field intensity and is given by n  n 0  n 2 I , where n0 is the
linear refractive index, n 2 the second-order nonlinear refraction
that relates to third order nonlinear susceptibility χ(3) and I
stands forindicates intensity of the total electric field in medium
[25]. The optical thickness of A and B layers was restricted by the
quarter wavelength condition i.e. n A d A  n Bd B  0 / 4 , in which, λ0
is the central design wavelength and is taken to be λ0= 550 nm in
numerical calculations.
x (BA)5Ag LiNbO3 Ag (AB)5(AABB)5
BA
LNO
Ag
V Z
Fig.1. Schematic of proposed 1DPC structure for designing the
tunable AOD. Arrows show directions of incident wave.
Proposed structure is the asymmetric Fabry-Prote with
arrangement of (BA)5/AgLiNbO3Ag/(AB)5(AABB)5 in which is
composed of layers B and A, and LNO with two thin Ag layers are
used as the defect. The external electric field is applied to LNO
along the z direction. The arrows show the L-R and R-L light
incident directions. LNO is an anisotropic crystal that itswith
optical properties that depend on direction of wave propagation
and can be tuned with applied external voltage [26]. For example,
if the applied field is along the optical axes of the crystal (in
direction of z-axes as shown in Fig. 1), the voltage dependent
extra-ordinary refractive index is given as follows:
n e (V)  n eo  0.5 n eo 3r33 V / d , (1)
where, n eo  2. 2 is the extra-ordinary refractive index in the
absence of the external voltage, r33  30.9 pm / V stands forindicates
EO factor, V is the applied voltage and d=110 nm is thickness of
LNO. The nonlinear susceptibility of LNO is measured to be
 (3)  9.1  107 esu [27]. Here, we should mention two important
pointes. First, it should be noted that, the maximum applied
voltage can be restricted by the threshold voltage for material
damage which is called dielectric breakdown threshold. The
breakdown voltage of LNO is reported as 1×107 V/cm (1 V/nm)
at room temperature [28, 29]. Therefore, in our configuration, 2
about 110 V can be applied to the structure without damage. The t ( )  . (4)
(m 22  m11 )  (m 21  m12 )
second pointe is that, the EO Kerr-coefficient of LNO is very small
(it has been measured, experimentally, to be less than 2.3×10-21 Hence, the transmittance spectrum of whole structure T ( ) , is
V2m-2 [30]). To give an estimation for example, at external given by T( )  | t ( ) |2 .
applied voltage of 50 V, the change in refractive index resulting
from the optical nonlinear-Kerr effect would be about 0.0022 and
is negligible in comparison toof linear EO effect (Pockels effect) 3. Results and discussion
change which would be 0.0820. ToFor applying the external Figure 2, shows the linear transmission spectrum versus
voltage, Ag layers with thickness of 9 nm were used since given normalized frequency for different applied external voltages in
that the skin depth for visible light is in the range of 12-20 nm the range of -80 V to 80 V. Each applied voltage is specified by a
[31]. The thicker films will block light transmission, but, color. It is clearly seen that, a tunable defect mode is appeared
incorporation of dielectric layer in between Ag layers favors inside the PBG region (0.8-1.2). Due to voltage dependency of
resonant tunneling. This opens up transmission windows that LNO refractive index, the defect mode electrically shifts towards
allow for a high transmission to be achieved in regions where the blue (red) for positive (negative) biases in comparison with
metals are typically opaque [31, 32]. Note that, thin layer of Ag the zero voltage bias as well as its transmittance increases.
with different thicknesses (3-17 nm) where, experimentally,
deposited by magnetron sputtering at room temperature [33,
34]. The optical resistivity for 9 nm thick Ag layer is measured to
be about 10-4 Ω-cm. The critical thickness of Ag to form a
continuous layer is found to be 8 nm using electrical and optical
analysis [35]. The refractive index of Ag in the ranges of 500 nm-
900 nm wavelengths is about 0.13 [36].

To investigating the effect of external voltage on AOD

behaviour, the LT spectrum, the NT curves and the field
distribution inside of the structure should be plotted. For this, the
well-known linear and nonlinear transfer matrix methods were
employed to calculate the transmittance spectra [37, 38].
According of this method, the tangential components of the
electric and magnetic fields at first and second surfaces of j th FIG. 2. Linear transmission spectrum of proposed PC structure at
nine different applied external voltages. By increasing the
layer with refractive index of n j and thickness of d j , are related applied voltage at positive (negative) biases, the defect mode
by the following 2×2 matrix: shifts to the higher (lower) frequencies.

 i  To better underestand the above statements, in Fig. 3, we have

cos ( k jd j ) sin ( k jd j )  plotted the behavior of the defect mode peak wavelengtht versus
M j   nj

, (2)
the applied external voltage. The red shift (shift to the higher
 in j sin( k jd j ) cos (k jd j ) 
wavelengths) for negative biases and the blue shift (shift to the
loewr wavelengths) for positive biases are clearly seen. For
where k j  n j  / c , j stands for A, B, LNO and Ag layers, c is the applied voltages from -80 V to 80 V, the defect mode peak
speed of light in vacuum and ω the frequency of the incident wavelength displaces from 536 nm to 519 nm (17 nm)
wave. It should be mentioned that the transfer matrixes of LNO wavelengths. Therefore , with this configuration, the proposed
and other nonlinear layers must be calculated, separately. There structure acts as a optical filter with 17 nm tunability.
areis two way to obtain the transfer matrix of a nonlinear slab.
We can directly use the nonlinear transfer matrix that has was
formulated by Gupta et al. [38]. In the second way, we can divide
the nonlinear layer to some sublayers, so that its refractive index
can be independent of intensity and then, the linear transfer
matrix can be employed. By considering the transfer matrix of
each layer, the transfer matrix of the whole PC structure is
obtained by multiplying the transfer matrices of the constituted
layers as,
M  (M B M A )5 M Ag M LiNbO 3 M Ag (M A M B )5 (M A M A M B M B )5
, (3)
m m12 
  11 
 m 21 m 22 
Fig. 3. Behavior of defect mode peak wavelenght with applied
here, mij are the complex elements of the transfer matrix of the external voltage. The defect mode shifts to blue for positive and
total structure. With simple calculations, the transmittance to red for negative biases.
coefficient from the structure can be obtained by the following
relation: To study the AOD efficiency behavior with voltage, the
nonlinear responses of LNO and A layers should be considered.
In this case, the LNO refractive index will be depend not only on

3
voltage, but also on intensity of the incident field. In other words,
in addition of electrically shifting due to applied external voltage,
Fig. 4. Shows the linear transmittance (LT) spectrum and
nonlinear transmission (NL) curves from L-R and R-L around the
defect mode frequency inside the band gap on 0.43 MW/cm2
incident intensity in the absent of applied voltage.
increasesing the incident field intensity causes to increase the
optical path length in nonlinear layers. Therefore, the defect
mode shifts towards the lower frequencies (red shift). In Fig.4,
the LT and NT spectra from L-R and R-L incidence at zero voltage
4
are plotted. The intensity of the incident light is considered to be
0.43 MW/cm2. It can be is seen that, for both incident directions,
the NT curves are deflected to the smaller frequencies with
respect to the LT defect mode frequency. Also, the NT from R-L
direction is more deviated than the L-R direction, so that, two
curves are separated from each other. This impliesmeans that,
the proposed structure shows good AOD performance from right
side incidents.
To investigate the effect of the applied external voltage on AOD
efficiency (NTL-R-NTR-L)/(NTL-R+NTR-L) behavior, the NT spectra
from R-L and L-R at different voltages, for both negative and
positive biases, are investigated. Figure 5, illustrates shows the
behavior of the NT spectra from L-R and R-L incidents around the
LT frequency at eight different positive and negative applied
voltages of 20V (a), -20V (b), 40V (c), -40V (d), 60V (e), -60V (f),
80V (g) and -80V (h). It is seen that, at both positive and negative
biases, with increaseing the applied voltage, the L-R and R-L NT
curves have deflected (nonlinearity in transmission) and
compressed with respect to LT. It is apparent evident that, the
changes are more sensitive for negative biases than the positive
onesbiases. In addition, both L-R and R-L NT curves have
amplified with increaseing in the applied voltage in which the R-
L transmittance has received to perfect transmittance at applied
voltage of -80 V.
Fig. 5. Shows the behaviour of the L-R and R-L nonlinear transmission curves for positive and negative biases at applied voltages of 20
(a), -20 (b), 40 (c), -40 (d), 60 (e), -60 (f), 80 (g) and -80 (h) in comparison of LT. The incident intensity set to be 0.43 MW/cm2.
It is demonstrated shown that, the AOD performance can be 20 (a), -20 (b), 40 (c), -40 (d), 60 (e), -60 (f), 80 (g) and -80 (h) for
obtained from the spatially asymmetric structures containing the L-R and R-L incidents have been plotted. The incident intensity is
nonlinear materials [17]. In this case, the electric field intensity set to be 0.43 MW/cm2. It is seen that, for left and right side
distribution along the layers would be anisotropic for left and incidents, the electric field is anisotropically localized at all
right side incident waves. This causes to change in the effective applied voltages. The field localization increases with increaseing
refractive index of the structure with incident direction. In Fig. 6, in the applied voltage for both negative and positive biases but it
we have plotted the normalized fieled intensity distribution is greater for negative voltages. It should be mention that, the
inside the structure at different positive and negative voltages of maximum localized field intensity inside the structure would be

5
about 5.5 MW/cm2 (12.8 times of the incident intensity, see Fig.
6(h)) which is very lowver than the polydiacetylene 9-BCUM
damage threshold is measured to be1 GW/cm2 [39].

(a) (b)

(c) (d)

(e) (f)

(g) (h)

Fig. 6. Behaviour of localized electric field distribution inside the proposed structure, from L-R and R-L incidents, for different applied
voltages of 20 (a), -20 (b), 40 (c), -40 (d), 60 (e), -60 (f), 80 (g) and -80 (h). The intensity of the incident field is set to be 0.43 MW/cm2.
Regarding the Bragg condition, the EO and Kerr effects, the negative biases, both, the dynamical shift due to nonlinearity of
physical interpretation of the observed behaviors is simple. At the refractive index and the electrical shift because ofdue to EO
6
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