KST5550

KST5550

High Voltage Transistor

3

1 SOT-23
1. Base 2. Emitter 3. Collector

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 160 V
VCEO Collector-Emitter Voltage 140 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 600 mA
PC Collector Power Dissipation 350 mW
TSTG Storage Temperature 150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=10µA, IE=0 160 V
BVCEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0 140 V
BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 6 V
ICBO Collector Cut-off Current VCB=100V, IE=0 100 nA
IEBO Emitter Cut-off Current VEB=4V, IC=0 50 nA
hFE DC Current Gain VCE=5V, IC=1.0mA 60
VCE=5V, IC=10mA 60 250
VCE=5V, IC=50mA 20
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.15 V
IC=50mA, IB=5mA 0.25 V
VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=1mA 1.0 V
IC=50mA, IB=5mA 1.2 V
fT Current Gain Bandwidth Product IC=10mA, VCE=10V 100 300 MHz
f=100MHz
Cob Output Capacitance VCB=10V, IE=0, f=1.0MHz 6.0 pF

Marking

1F

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KST5550
Typical Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

1000 10

VCE = 5V IC = 10 IB
hFE, DC CURRENT GAIN

100 1 V BE(sat)

10 0.1
VCE (sat)

1 0.01
1 10 100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000 100
VCE = 5V
f = 1MHz
IE = 0
IC[mA], COLLECTOR CURRENT

Cob[pF], CAPACITANCE

100 10

10
1

1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1
1 10 100

VBE[V], BASE-EMITTER VOLTAGE VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance

fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT

1000

VCE = 10V

100

10

1
1 10 100 1000

IC[mA], COLLECTOR CURRENT

Figure 5. Current Gain Bandwidth Product

©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002

 KST5550
Package Dimensions

SOT-23

0.20 MIN
0.45~0.60
0.40 ±0.03

±0.10

±0.10
1.30

2.40
0.03~0.10

0.38 REF

0.40 ±0.03 +0.05

0.12 –0.023

0.96~1.14
2.90 ±0.10
0.97REF

0.95 ±0.03 0.95 ±0.03

1.90 ±0.03 0.508REF

Dimensions in Millimeters

©2001 Fairchild Semiconductor Corporation Rev. A2, November 2002

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.

ACEx™ FACT™ ImpliedDisconnect™ PACMAN™ SPM™

ActiveArray™ FACT Quiet series™ ISOPLANAR™ POP™ Stealth™
Bottomless™ FAST® LittleFET™ Power247™ SuperSOT™-3
CoolFET™ FASTr™ MicroFET™ PowerTrench® SuperSOT™-6
CROSSVOLT™ FRFET™ MicroPak™ QFET™ SuperSOT™-8
DOME™ GlobalOptoisolator™ MICROWIRE™ QS™ SyncFET™
EcoSPARK™ GTO™ MSX™ QT Optoelectronics™ TinyLogic™
E2CMOS™ HiSeC™ MSXPro™ Quiet Series™ TruTranslation™
EnSigna™ I2C™ OCX™ RapidConfigure™ UHC™
Across the board. Around the world.™ OCXPro™ RapidConnect™ UltraFET®
The Power Franchise™ OPTOLOGIC® SILENT SWITCHER® VCX™
Programmable Active Droop™ OPTOPLANAR™ SMART START™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2002 Fairchild Semiconductor Corporation Rev. I1

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