Programmable ercese Unijunction Transistors Silicon Programmable Unijunction Transistors designed to enable the engineer to “program” unijunction characteristics such 28 Rap. 1. Iv, and Ip by merely selecting two resistor values. Application includes ‘thytistor-trigger, oscillator, pulse and timing circuits. These devices may also he aoa Used in special thyristor applications due to the availability of an anode gate. Sup- —_ ____—— plied in an inexpensive TO-82 plastic package for high-volume requirements, this package is readily adaptable for use in eutomatic insertion equipment. Programmable — Rap, n,ly and ip. aoe Sa © Low On-State Voltage — 1.5 Volts Maximum @ If = 60 mA Low Gate to Anode Leakage Current — 10 na Maximum ‘* High Peak Output Voltage — 11 Volts Typical ‘© Low Offset Voltage — 0.35 Volt Typical (Rg = 10k ohms} CASE 29-04 (7022548) STYLE 16 MAXIMUM RATINGS (Tj = 25°C unless otherwise noted Rating ‘Symbol Van Unit “Power Dissipation Pe "300 maw Derate Above 25°C ein « wre “DC Forward Anode Current, i 150 mA Deroto Above 25°C 267 marc SOC Gate Current ie 250 mA, Repetitive Peak Forward Currant aM amps "00 ns Pulse Wiath, 1% Duty Cyc 1 220 8 Puloe Width, 1% Duty Cycle 2 ‘Non Repatve Peok Forward Current em 5 ‘anes 10 us Puise With “Gate to Cathode Forward Volige Voxr 0 Vor “Gate to Cathode Reverse Voltage Voxe s Vers “Gate to Anode Raverse Vokage Vaan Vos ‘Anode to Cathode Votege, Note 1 Vax. 240 Votts Operating Junction Temperature Range % |S +100] "Storage Tempereture Range Tas. Son, Nowe 1 Anode postin, ga ~ 109 ohms ‘Rode Sogn, Rom = open AAT EE MOTOROLA THYRISTOR DEVICE DATA 3272N6027 © 2N6028 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless thorwise noted) Cheracterite Fig. No. | Symbot__| Min | Te | Max | Unie Peak Curent zat rs ry Wg = 10 de, Rg = 1 Mn) 2ne027 fore |ieeavel iad 26028 — | os | ors Wg = 10 de, Rg = 10 k ohms) 2N6027 = | ve |S 2N5028 = [om] “Orie Vorage 7 Vr Vore Ws ~ 10 Vde, Rg = 10) 200027 02 | o7 | 16 2N0028 02 | os | a6 Wg © 10 Vee, Rg = 10 k ohms) (Goth Ty 02 | 035 | o6 Valley Curent 1a5 ¥ vA (Ws = 10 Vde, Ri = 1 MN) 2No027 - | 2 | 2n6028 = | we | as Wg = 10 Vée, Ry = 10 ohms) e027 mo | wo | = 2No028 2 | wo | = (Wg = 10 Vee, Rg = 200 ohms) 26027 ws | — | = | ma 2Ne028 oe “Gate to Anode Leakage Current = 'eao ‘wade (Wg = 40 Vee, Ta = 25°C. Cathode Open) -| 1]. (Wg = 40 Vee, Ta = 75°C, Cathode Open) = ‘Gato to Cathode Leakage Gurrent = Texs =| = | & | sas (Wg = 40 Ve, Anode to Cathode Shorted) “Forward Vattage ty = 0 mA Peat) 18 YF eo Peak Output Voltage 37 Yo 6s fo | — | vor [Ng = 20 Vée, Cg = 02 nF) Pulse Voltage Rise Time 3 7 =| | o | Wp = 20de, Co 0.2 uF "Inceater JEDEC Reptered et, FIGURE 1 — ELECTRICAL CHARACTERIZATION, FIGURE 2 — PEAK CURRENT (ip) TEST CIRCUIT FIGURE 3 V, ANE TEST cincuIT were T T[Eansara MOTOROLA THYRISTOR DEVICE DATA 3282N6027 © 2N6028 ‘TYPICAL VALLEY CURRENT BEHAVIOR FIGURE 4 EFFECT OF SUPPLY VOLTAGE FIGURE 5 ~ EFFECT OF TEMPERATURE 0 7 =——: fg = win VALLEY CURRENT VALLEY CURRENT a aes ae 82 -— z Reg = AI+ RZ Are RD Ri K Cireuit Symbol Typical Application 3.292N6027 ¢ 2N6028 TYPICAL PEAK CURRENT BEHAVIOR 2N6027 FIGURE 9 ~ EFFECT OF SUPPLY VOLTAGE AND Rg FIGURE 10 ~ EFFECT OF TEMPERATURE AND Rg a4 za ee rcune = os] Zig] 2N6028 Zz FIGURE 11 ~ EFFECT OF SUPPLY VOLTAGE ANO RG FIGURE 12 EFFECT OF TEMPERATURE AND Rg 2 on] 3 oof iene ARO AY A MOTOROLA THYRISTOR DEVICE DATA 3-30