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SEMICONDUCTOR TECHNICAL DATA by T2800/D

Triacs T2800
Bidirectional Triode Thyristors SERIES
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies.
• Blocking Voltage to 600 Volts TRIACs
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and 8 AMPERES RMS
Stability 200 thru 600 VOLTS
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• T2800 — Four Quadrant Gating

MT2 MT1
G

CASE 221A-04
(TO-220AB)
STYLE 4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit
Peak Repetitive Off-State Voltage(1) VDRM Volts
(TJ = –40 to +100°C, Gate Open)
T2800 B 200
D 400
M 600
RMS On-State Current (TC = +80°C) IT(RMS) 8 Amps
(Conduction Angle = 360°)
Peak Non-repetitive Surge Current ITSM 100 Amps
(One Full Cycle, 60 Hz, TJ = +80°C)
Circuit Fusing I2t 40 A2s
(t = 8.3 ms)
Peak Gate Power (Pulse Width = 1 µs) PGM 16 Watts
Average Gate Power PG(AV) 0.35 Watt
Peak Gate Trigger Current (Pulse Width = 1 µs) IGTM 4 Amps
Operating Junction Temperature Range TJ –40 to +100 °C
Storage Temperature Range Tstg –40 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.2 °C/W
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

REV 1

Motorola Thyristor Device Data 1

 Motorola, Inc. 1995
  
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current IDRM
(VD = Rated VDRM, Gate Open) TC = 25°C — — 10 µA
TC = 100°C — — 2 mA
Peak On-State Voltage (Either Direction)* VTM — 1.7 2 Volts
(IT = 30 A Peak)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 12 Ohms)
MT2(+), G(+) T2800 — 10 25
MT2(+), G(–) T2800 — 20 60
MT2(–), G(–) T2800 — 15 25
MT2(–), G(+) T2800 — 30 60

Gate Trigger Voltage (Continuous dc) (All Polarities) VGT Volts

(VD = 12 Vdc, RL = 100 Ohms) — 1.25 2.5
(RL = 125 Ohms, VD = VDRM, TC = 100°C) 0.2 — —
Holding Current (Either Direction) IH mA
(VD = 12 Vdc, Gate Open) T2800 — 15 30

Gate Controlled Turn-On Time tgt — 1.6 — µs

(VD = Rated VDRM, IT = 10 A, IGT = 80 mA, Rise Time = 0.1 µs)
Critical Rate-of-Rise of Commutation Voltage dv/dt(c) — 10 — V/µs
(VD = Rated VDRM, IT(RMS) = 8 A, Commutating di/dt = 4.1 A/ms,
Gate Unenergized, TC = 80°C)
Critical Rate-of-Rise of Off-State Voltage dv/dt V/µs
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = 100°C)
T2800 B 100 — —
D — — —
M 60 — —
*Pulse Test: Pulse Width p 300 µs, Duty Cycle p 2%.

FIGURE 1 – CURRENT DERATING FIGURE 2 – POWER DISSIPATION

TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (°C)

P(AV) , AVERAGE POWER DISSIPATION (WATTS)

100 12

10
95 FULL CYCLE
FULL CYCLE SINUSOIDAL MAXIMUM
8
SINUSOIDAL WAVEFORM
WAVEFORM TYPICAL
90 6

4
85
2

80 0
0 2 4 6 8 0 2 4 6 8 10 12
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

2 Motorola Thyristor Device Data

  
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
SEATING Y14.5M, 1982.
–T– PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
B F C ALLOWED.
T
S INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
4 B 0.380 0.405 9.66 10.28
Q A STYLE 4: C 0.160 0.190 4.07 4.82
PIN 1. MAIN TERMINAL 1 D 0.025 0.035 0.64 0.88
1 2 3 U 2. MAIN TERMINAL 2 F 0.142 0.147 3.61 3.73
3. GATE G 0.095 0.105 2.42 2.66
H 4. MAIN TERMINAL 2 H 0.110 0.155 2.80 3.93
K J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
Z
L 0.045 0.055 1.15 1.39
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
L R R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
V J T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
G V 0.045 ––– 1.15 –––
D Z ––– 0.080 ––– 2.04
N

CASE 221A-04
(TO–220AB)

Motorola Thyristor Device Data 3

  

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4 Motorola Thyristor Device Data

*T2800/D*
◊ T2800/D
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