MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MAC212
Series
Triacs MAC212A
Silicon Bidirectional Thyristors Series
. . . designed primarily for full-wave ac control applications, such as light dimmers,
motor controls, heating controls and power supplies; or wherever full-wave silicon
gate controlled solid-state devices are needed. Triac type thyristors switch from a TRIACs
blocking to a conducting state for either polarity of applied anode voltage with positive 12 AMPERES RMS
or negative gate triggering. 200 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity
and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat MT1
Dissipation and Durability
• Gate Triggering Guaranteed in Three Modes (MAC212 Series) or Four Modes MT2 G
(MAC212A Series)

CASE 221A-04
(TO-220AB)
STYLE 4

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit
Repetitive Peak Off-State Voltage(1) (TJ = –40 to +125°C, VDRM Volts
1/2 Sine Wave 50 to 60 Hz, Gate Open)
MAC212-4, MAC212A4 200
MAC212-6, MAC212A6 400
MAC212-8, MAC212A8 600
MAC212-10, MAC212A10 800
On-State Current RMS (TC = +85°C) IT(RMS) 12 Amp
Full Cycle Sine Wave 50 to 60 Hz
Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = +85°C) ITSM 100 Amp
preceded and followed by Rated Current
Circuit Fusing Considerations (t = 8.3 ms) I2t 40 A2s
Peak Gate Power (TC = +85°C, Pulse Width = 10 µs) PGM 20 Watts
Average Gate Power (TC = +85°C, t = 8.3 ms) PG(AV) 0.35 Watt
Peak Gate Current (TC = +85°C, Pulse Width = 10 µs) IGM 2 Amp
Operating Junction Temperature Range TJ –40 to +125 °C
Storage Temperature Range Tstg –40 to +150 °C
1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

Motorola Thyristor Device Data 3–83

  
  

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 2.1 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
Peak Blocking Current (Either Direction) IDRM
(VD = Rated VDRM, Gate Open) TJ = 25°C — — 10 µA
TJ = +125°C — — 2 mA
Peak On-State Voltage (Either Direction) VTM — 1.3 1.75 Volts
ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
Gate Trigger Current (Continuous dc) IGT mA
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 12 50
MT2(+), G(–) — 12 50
MT2(–), G(–) — 20 50
MT2(–), G(+) “A” SUFFIX ONLY — 35 75
Gate Trigger Voltage (Continuous dc) VGT Volts
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 0.9 2
MT2(+), G(–) — 0.9 2
MT2(–), G(–) — 1.1 2
MT2(–), G(+) “A” SUFFIX ONLY — 1.4 2.5
(Main Terminal Voltage = Rated VDRM, RL = 10 kΩ, TJ = +125°C)
MT2(+), G(+); MT2(–), G(–); MT2(+), G(–) 0.2 — —
MT2(–), G(+) “A” SUFFIX ONLY 0.2 — —
Holding Current (Either Direction) IH — 6 50 mA
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = 500 mA)
Turn-On Time tgt — 1.5 — µs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5 — V/µs
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = +85°C)
Critical Rate of Rise of Off-State Voltage dv/dt — 100 — V/µs
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open,
TC = +85°C)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( ° C)

FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION

PD(AV), AVERAGE POWER DISSIPATION (WATT)

125 28

24
115 α
20 α dc
105 α = 30° α = 180°
16 α = CONDUCTION ANGLE
90°
60° 12 60°
95 α 90° 30°
α 180° 8.0
85 dc
α = CONDUCTION ANGLE 4.0

75 0
0 2.0 4.0 6.0 8.0 10 12 14 0 2.0 4.0 6.0 8.0 10 12 14
IT(RMS), RMS ON-STATE CURRENT (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

3–84 Motorola Thyristor Device Data

  
  

FIGURE 3 — MAXIMUM ON-STATE CHARACTERISTICS FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT
100 100

ITSM , PEAK SURGE CURRENT (AMP)

50
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 80

20
60
10
40 CYCLE
5.0

TJ = 25°C TC = 70°C
20
2.0 f = 60 Hz
TJ = 125°C
Surge is preceded and followed by rated current
1.0 0
1.0 2.0 3.0 5.0 7.0 10
0.5 NUMBER OF CYCLES

0.2

0.1 FIGURE 5 — TYPICAL GATE TRIGGER VOLTAGE

0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4

VGT , GATE TRIGGER VOLTAGE (NORMALIZED)

2.0
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

1.6 OFF-STATE VOLTAGE = 12 Vdc

ALL MODES

1.2

0.8

0.4

0
–60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C)

FIGURE 6 — TYPICAL GATE TRIGGER CURRENT FIGURE 7 — TYPICAL HOLDING CURRENT

I GT, GATE TRIGGER CURRENT (NORMALIZED)

2.0 2.8
IH , HOLDING CURRENT (NORMALIZED)

2.4
OFF-STATE VOLTAGE = 12 Vdc
1.6 OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0 ALL MODES

1.2 1.6

1.2
0.8
0.8
0.4
0.4

0 0
–60 –40 –20 0 20 40 60 80 –60 –40 –20 0 20 40 60 80
TC, CASE TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

Motorola Thyristor Device Data 3–85

  
  

FIGURE 8 – THERMAL RESPONSE
r(t), TRANSIENT THERMAL RESISTANCE 1.0

0.5

0.2
(NORMALIZED)

ZθJC(t) = r(t) • RθJC

0.1

0.05

0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

3–86 Motorola Thyristor Device Data