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Engineering Holey Defects on 2D Graphitic Carbon Nitride


Nanosheets by Solvolysis in Organic Solvents
Thanh Truong Dang, Thi Kim Anh Nguyen, K. C. Bhamu, Tahereh Mahvelati-Shamsabadi,
Vo Kim Hieu Van, Eun Woo Shin, Koo-Hyun Chung, Seung Hyun Hur, Won Mook Choi,
Sung Gu Kang,* and Jin Suk Chung*
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sı Supporting Information

ABSTRACT: In this work, we present the in situ exfoliation of


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graphitic carbon nitride (g-C3N4), engineering holey defects on 2D


g-C3N4 layers, and formation of self-assembled graphene via
solvothermal treatment of g-C3N4-bulk in various organic solvents.
Methyl alcohol, isopropyl alcohol, tetrahydrofuran, and dimethylfor-
mamide were chosen for exfoliating and modifying g-C3N4 sheets
based on their compatibility with g-C3N4 in Hansen parameters.
Uniform holey defects on 2D g-C3N4 nanosheets were successfully
engineered using tetrahydrofuran solvent in a facile solvothermal process. The introduction of N vacancies in heptazine units and the
formation of the holey structure of tetrahydrofuran-modified g-C3N4 sample (C3N4-THF) led to high photocatalytic performance
due to enhanced mass transfer, shortening of the charge diffusion lengths, and increased charge separation during the photocatalysis
process. Furthermore, full exfoliation of the engineered nanostructure of holey defect C3N4-THF into a monolayer in reaction media
led to maximizing accessible reducing and oxidizing active sites. As a result, the C3N4-THF sample achieved photocatalytic activity
with a H2 evolution rate at stationary point as high as 31256.9 μmol h−1 g−1 under 1 Sun illumination of a solar simulator.
KEYWORDS: monolayer graphitic carbon nitride, nanostructure design, holey structure, self-assembled graphene, solvolysis of g-C3N4,
hydrogen evolution, simulated sunlight

1. INTRODUCTION electrical conductivity, and lack of visible light absorption


Solar energy is the most sustainable energy replacement for above 460 nm.14 Therefore, numerous modifications of bare g-
fossil fuels as it is a plentiful, widely distributed, and a C3N4, including synthesis approaches, nanostructure design,
continuously renewable source of energy. Hydrogen evolution electronic structure, and bandgap modulation,10,15 have been
brought by high-energy UV light has been well studied for over employed to optimize photocatalyst performance.
a century since the first observation with TiO2 as a The accessible surface-active sites, morphologies, and lateral
photocatalyst.1 However, only approximately 5% of solar sizes of semiconductor materials greatly influence the photo-
ultraviolet radiation penetrates the atmosphere to reach the activity of photocatalysts. Theoretically, graphene-like g-C3N4
Earth’s surface.2 Hence, extensive recent research in semi- as a two-dimensional (2D) material is a promising candidate
conductor materials promoted by visible light has led to for various applications in photosynthesis due to its large
development in the use of photocatalysts for hydrogen specific surface area, which provides more reactive sites and
evolution.3 Among these materials, the polymeric semi- shorter carrier diffusion lengths to prevent electron recombi-
conductor, g-C3N4, as a novel noble metal-free photocatalyst nation. However, bulk g-C3N4 has strong hydrogen bonding
with a bandgap of 2.8 eV,4 a delocalized π system, and diverse and van der Waals stacking between interlayers, which lead to
synthetic modularity has emerged as a promising visible light- low dispersibility of g-C3N4 in reaction media.13,16 The
responsive photocatalyst due to its facile synthesis, appealing accessibility of active surfaces in the reaction medium and
optical bandgap and semiconducting properties, high chemical the dispersibility of g-C3N4 in water are therefore crucial
and thermal stability, as well as a variety of textures and
structures.5 Furthermore, g-C3N4 can be easily fabricated via
thermal polymerization of abundant precursors such as urea,6 Received: July 20, 2022
thiourea,7 melamine,8 cyanamide,9 and dicyandiamide.10,11 Revised: October 14, 2022
Unfortunately, bulk g-C3N4 synthesized by this method suffers
several obstacles and shortcomings such as low surface area,
resulting in low dispersion of accessible active sites in
water,12,13 high recombination rate of charge carriers, poor

© XXXX American Chemical Society https://doi.org/10.1021/acscatal.2c03523


13763 ACS Catal. 2022, 12, 13763−13780
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Scheme 1. Schematic of Solvothermally Modified g-C3N4 Preparation

parameters. An exfoliation process could be used to achieve a facile solvothermal method with different organic solvents.
monolayer structure of g-C3N4, which maximizes the basal Tetrahydrofuran was found to be the most appropriate solvent
active sites of 2D g-C3N4 material for photocatalysis of H2 for engineering holey defects on g-C3N4 layers, resulting in a
evolution. However, the planar structure of g-C3N4 sheets has uniformly holey defect single-layer structure of C3N4-THF. All
some drawbacks for photocatalysis toward the H2 evolution the resultant g-C3N4 samples performed high hydrogen
reaction such as long charge diffusion to active sites, low mass generation, in particular, the tetrahydrofuran-modified g-
transfer, and deficiency of reducing and oxidizing active sites C3N4 sample, which had an optimized hydrogen evolution
on basal planes. From the perspective of nanostructure rate as high as ca. 31256.9 μmol h−1 g−1. The superior
properties, holey defect g-C3N4 nanosheets with multiple in- photocatalytic activity of solvothermally modified g-C3N4 was
plane holes can significantly increase the efficiency of mass demonstrated by enhanced H2 evolution rates under simulated
transport across holey defects during photocatalysis and may sunlight using platinum nanoparticles decorated by hydrogen
also enhance the charge separation efficiency by decreasing the reduction as a co-catalyst, triethanolamine as a sacrificial agent,
charge diffusion length. Additionally, these holey defects not and eosin Y as a photosensitizer.
only greatly increase the number of accessible active sites but
also effectively act to prevent agglomeration by reducing the 2. RESULTS AND DISCUSSION
interaction sites between g-C3N4 layers. Although there are 2.1. Synthetic Strategy to Design Holey Defects on g-
many advantages from achieving holey defects with g-C3N4, C3N4 Nanosheets. The detailed synthetic procedure of the
synthesis of this structure of a g-C3N4 nanosheet using resultant g-C3N4 by solvothermal treatment in various organic
ammonia-based toxic reagents poses a challenge.17 solvents is illustrated in Scheme 1. MA, IPA, THF, and DMF
Herein, we report an integrated process of exfoliation, solvents with dispersive parameters of 15.1, 15.8, 16.8, and
morphology transformation, and g-C3N4/self-assembled gra- 17.4 MPa1/2, respectively, were chosen in comparison with g-
phene formation via solvothermal treatment of g-C3N4 in C3N4-dispersive Hansen parameters of 17.8 MPa1/2 (Table
various organic solvents. Methyl alcohol, isopropyl alcohol, S1). As shown in Scheme 1, during the solvothermal process,
tetrahydrofuran, and N,N-dimethylformamide were used as solvent molecules may act as a wedge in the interlayer spacing
organic solvents for observable high-pressure solvothermal of g-C3N4 inducing exfoliation. At the same time, the
treatment at 200 °C, which modified the morphology and unbalanced compressive forces on two adjacent layers would
graphitic structure and disrupted hydrogen and van der Waals cause shear-induced peeling. Furthermore, under the harsh
bonding. It was interesting to observe that self-assembled condition of solvothermal treatment, the selected solvents
graphene was created during the solvothermal treatment of g- could attack the g-C3N4 structure to form holey defects on the
C3N4, which may have resulted from etching of g-C3N4 to form planar nanosheets. As a result, while the highly polar solvent
fragment unit byproducts, followed by reforming into the (MA) fragmented the skeleton of g-C3N4 layers, the aprotic
graphitic structure of graphene. The modification of bulk g- solvent DMF had no etching effect on the layers and
C3N4 by a moderately polar solvent plays an important role in maintained the lateral size. The moderately polar IPA created
graphitic structure reforming and assists in the exfoliation of g- the structure of a centered sheet with holey defects at the edges
C3N4 in attempting to achieve the holey structure of of g-C3N4. Interestingly, THF produced uniform holey defects
monolayer g-C3N4 in reaction media. The holey defects on on the planar sheets without fracturing the skeleton of the g-
2D g-C3N4 nanosheets were successfully engineered using a C3N4 layers.
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Figure 1. (a) XRD spectra of C3N4-bulk, C3N4-MA, C3N4-IPA, C3N4-DMF, and C3N4-THF. (b) Inset shows the XRD spectra of C3N4-MA, C3N4-
IPA, C3N4-DMF, and C3N4-THF.

Table 1. Elemental Compositions and Calculated C/N and O/N Atomic Ratios of the Samples Analyzed by Elemental Analysis
(C, H, N, O, and S Analyzer)
elemental analysis
sample C (wt %) N (wt %) O (wt %) H (wt %) C/N O/N C/O
C3N4-bulk 35.3127 54.9294 3.4549 1.6458 0.6429 0.0629 10.2212
C3N4-MA 33.6948 50.8426 5.9529 2.0101 0.6627 0.1171 5.6603
C3N4-IPA 33.9791 51.8360 4.5531 1.8634 0.6555 0.0878 7.4628
C3N4-DMF 33.5533 50.8351 4.7169 1.8590 0.6600 0.0928 7.1134
C3N4-THF 33.8500 51.4490 4.8540 1.8876 0.6579 0.0943 6.9736

2.2. Crystal Structure and Chemical Composition of characterize the g-C3N4 chemical structures (Figure S1). All
Solvothermally Modified g-C3N4. The crystallographic the samples had similar FT-IR spectra with three essential
nature and purity of the obtained samples were analyzed by band ranges. The typical peaks at 810 and 900−1700 cm−1
XRD (Figure 1a). The XRD patterns of all samples displayed were assigned to the vibration mode of tris-s-triazine units and
two clear peaks at 13.1 and 27.7°, which were assigned to the the characteristic stretching mode of C−N heterocycles as well
(100) and (002) crystal planes of g-C3N4 (JCPDS 87-1526), as C−C aromatic rings, respectively.20 Broadened bands at
corresponding to in-plane structural packing repeated 3000−3500 cm−1 were attributed to N−H and the stretching
heptazine motifs and interlayer stacking of conjugated aromatic mode of epoxide and hydroxyl groups.21 In comparison with
systems, respectively.18 Thus, the general structure of g-C3N4 C3N4-bulk, solvothermally treated g-C3N4 samples showed
had been maintained after solvothermal treatment. An stronger and more stretching peaks between 3000 and 3500
additional broad feature around 57.5° refined crystallized in cm−1, which can be attributed to fewer N−H groups after
the hexagonal space group with AB stacking of the triazine- solvothermal treatment.22
based g-C3N4 layers.19 The decreased intensity of the two main The detailed elemental composition of the resultant samples
peaks of carbon nitride from the bulk to the solvothermally was determined by elemental analysis (Table 1). All of the
treated samples demonstrated successful exfoliation of the samples possessed a higher percent by mass of oxygen and
stacked layers in the graphitic structure after solvothermal hydrogen elements than the starting C3N4-bulk material, which
treatment. obviously suggests that more oxygen groups were formed into
Furthermore, the peaks at ca. 39.8, 46.3, 67.5, and 81.4 the g-C3N4 layers. The percentages of carbon and nitrogen in
belong to the face-centered cubic (fcc) structure of the Pt C3N4-bulk samples simultaneously decreased after reactions,
metal crystalline lattice, which was ascribed to the (111), along with equivalent C/N atomic ratios (around 0.65) of all
(200), (220), and (311) crystalline planes, respectively. As samples. It is widely accepted that the C/O and O/N atomic
shown in the inset figure (Figure 1b), C3N4-THF and C3N4- ratios represent the relative oxidation level of graphitic
IPA displayed two clear crystalline planes (111) and (200) of structure materials.23,24 The as-prepared C3N4-bulk sample
the metal Pt lattice, while the C3N4-MA sample showed weaker has a C/O atomic ratio of 10.22. Compared to C3N4-bulk, the
signals for those planes, and no obvious peaks were observed C/O atomic ratio of C3N4-IPA, C3N4-DMF, C3N4-THF, and
for the C3N4-DMF sample. The intensity of the Pt peaks may C3N4-MA decreased to 7.46, 7.11, 6.97, and 5.66, respectively,
be related to different Pt-oxidation states, which is further due to the oxidation of g-C3N4 with the introduction of more
discussed in the X-ray photoelectron spectroscopy (XPS) data. oxygen-containing functional groups. In contrast, the O/N
To further investigate the structure of the resultant samples, atomic ratio of modified g-C3N4 samples increased consistently
Fourier transform infrared spectroscopy (FT-IR) was used to with the trend of the C/O ratio. The polar aprotic solvents
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(DMF and THF) and the moderately polar protic solvent some structural information. The first column shows the ratio
(IPA) showed mild oxygen functionalization, while the highly of Nsp2 (nitrogen atoms in heptazine units) to the sum of
polar protic solvent (CH3OH) possessed strong etching and Nprimary (−NHx) and Ntertiary (−N<) atoms at the surface of
higher functionalizing oxygen content on the g-C3N4 surface different samples. Comparing this ratio for all samples showed
structures.25 that C3N4-DMF has the highest portion of Nsp2 compared to
The surface chemical states of the as-prepared samples were the other materials, while C3N4-THF showed the lowest value.
investigated by XPS analysis. The XPS survey spectra of C3N4- The value of this parameter demonstrates maintenance of the
bulk and resultant samples (Figure S2) confirmed the existence g-C3N4 layer using DMF solvent, which was confirmed in
of carbon, nitrogen, oxygen, and platinum. The C 1s and N 1s atomic force microscopy (AFM) images. On the other hand,
core-level spectra deconvoluted into Gaussian shapes are this parameter indicates the loss of some heptazine units in the
shown in Figure 2. In the C 1s XPS spectra (Figure 2a), the g-C3N4 structure by breakage of Ntertiary in the case of using
MA, IPA, and THF solvents. The Nsp2/Csp2 parameter
demonstrated the same pattern as Nsp2/N(p + t) (column 2,
Table S2). This ratio depicted the reduction of Nsp2 compared
with Csp2 in heptazine units that can be a sign of nitrogen
vacancy in the g-C3N4 framework. This result indicates that the
solvents can interact with the g-C3N4 layer via different
positions, Ntertiary (−N<) or Nsp2 bonds in the heptazine rings.
As a result, two different kinds of defects can be introduced to
the structure: heptazine unit vacancy and nitrogen deficiency.
These two parameters showed production of a holey structure
using IPA and THF. The difference between C3N4-IPA and
C3N4-THF is the formation of more uniform holes in the
sheets of C3N4-THF, and holes appearing at the edge of C3N4-
IPA with a planar structure at the centered layers. The highest
values in the C3N4-DMF and C3N4-MA samples signify no
holey structures for those samples. The difference between
C3N4-MA and C3N4-DMF is related to the formation of small
sheets using MA, resulting in more −NH2 groups in C3N4-MA.
This result may be due to the strong etching effect of MA
solvent on the g-C3N4 structure that fractures the skeleton of
the graphitic structure into smaller fragments as discussed in
Section 2.3.
* *
Furthermore, there are two parameters of and
C total Ntotal
calculated from C 1s and N 1s XPS spectra (Table S2), which
are related to the redistribution of π−π* electrons on carbon
and nitrogen atoms in the graphitic structure. The decrease of
*
ratio in C3N4-IPA and C3N4-THF in comparison with
C total
C3N4-DMF and C3N4-MA demonstrates the loss of carbon
atoms via introduction of holey defects in the graphitic layer
*
Figure 2. XPS spectra of C3N4-bulk, C3N4-MA, C3N4-IPA, C3N4- structure. The higher value of for C3N4-THF compared
C total
DMF, and C3N4-THF. (a) C 1s spectra and (b) N 1s spectra.
to C3N4-IPA depicted better minus charge localization on
carbon atoms after holey defect formation. In other words, IPA
main carbon peaks at ca. 284.6.0 and 288.0 eV were attributed molecules damage the p-conjugated structure more than THF,
to graphitic structure (C�C or C−C) bonds and sp2- which resulted in the lowest catalytic performance for the H2
hybridized carbon atoms bonded with three N (N2−C� evolution reaction. Moreover, the highest value of
*
for
N−), respectively.26−28 The core-level spectra of N 1s were Ntotal
used to reveal the distribution of nitrogen-containing groups in C3N4-THF also confirmed the presence of holey defects
the samples. The lowest energy contribution (ca. 398.2 eV) of through the loss of nitrogen atoms.
the N 1s spectrum is attributed to nitrogen bonded with two High-resolution O 1s XPS spectra were used to confirm the
carbon atoms in a graphitic sp2 network (Figure 2b), whereas existence of oxygen doping and oxygen group functionalization
the peak at ca. 399.9 eV corresponds to the overlap of signals mirroring FT-IR and EA results. The deconvolution of O 1s
from bridging nitrogen atoms such as tertiary N (−N<) and XPS exhibited three additional peaks located at 530.0, 531.7,
amino groups (−NHx), revealing the presence of tris-triazine and 532.3 eV in the C3N4-bulk. In addition, solvothermally
rings in the g-C3N4 framework. In addition, a weak signal treated g-C3N4 samples showed three bands at ca. 530.0, ca.
positioned around 293 eV in C 1s and 403.8 eV in N 1s spectra 531.7, and ca. 532.8 eV (Figure S3), which were assigned to
can be assigned to the π electron delocalization in g-C3N4 the C�O (O1), N−C−O (O2), and O−H (O3) groups on
heterocycles. the surface of g-C 3 N 4 . 27−29 The unavoidable oxygen
In Table S2, detailed parameters calculated from the N 1s functionalization resulted in peaks O1 and O3 during the
and C 1s XPS peaks are described, in which we can obtain thermal polymerization synthesis in air atmosphere.28 In the
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solvothermally treated g-C3N4 samples, the ratio of O2/Ototal C3N4-MA, and C3N4-THF are 0.03, 0.13, 0.16, and 0.34,
increased compared to the bulk, which indicates oxygen respectively. These results indicate that the presence of O−H
doping to the g-C3N4 structure via solvothermal reactions, groups on g-C3N4 may be responsible for converting Pt0 to
while the proportion of O3/Ototal exhibited a clear reduction Pt2+ in C3N4-MA, C3N4-DMF, and C3N4-THF. However, a
from the bulk to solvothermally treated g-C3N4 samples (Table very small value of O−H groups in C3N4-IPA resulted in the
S2). These results are consistent with the FT-IR data in which formation of only the Pt0 state. It is notable that C3N4-THF
the intensity of the O−H stretching band (3000−3500 cm−1) had the highest number of O−H groups (highest O3/Ototal)
decreased after solvothermal treatment. Indeed, from the EA but contained a lower amount of Pt2+ in comparison with
results (Table 1), the oxygen content in solvothermally treated C3N4-MA and C3N4-DMF. This result suggests that only O−H
samples increased gradually from C3N4-bulk (3.5 wt %) to groups in planar sites can promote the conversion of Pt0 to
C3N4-IPA (4.6 wt %), C3N4-DMF (4.7 wt %), C3N4-THF (4.9 Pt2+. Since C3N4-THF has a uniform holey structure, most of
wt %), and C3N4-MA (6.0 wt %). The O 1s XPS spectra, FT- its O−H groups are located at edge sites, and there are fewer
IR, and EA results together indicate that the O−H groups had available O−H groups at planar sites compared to C3N4-MA
been reduced, and oxygen doping had been introduced into and C3N4-DMF. PtO and metallic Pt nanoparticles can both
the g-C3N4 structure during the solvothermal process. act as co-catalyst sites for H2 evolution on the host
The designed amount of 3 wt % platinum nanoparticles was photocatalyst surface. The role of Pt-oxidation states in the
successfully loaded onto the catalyst surface by hydrogen H2 production reaction and the mechanism for Pt2+ formation
reduction of H2PtCl6 in aqueous solution, which was studied in from O-groups on g-C3N4 is still being studied. The actual
our previous work.23 The deconvolution of high-resolution Pt amount of Pt loaded on the catalyst was determined by ICP-
4f XPS spectra (Figure 3) revealed the oxidation states of Pt OES analysis. The amounts of 1.86, 2.29, 2.35, and 2.28 wt %
Pt nanoparticles were loaded on C3N4-MA, C3N4-IPA, C3N4-
DMF, and C3N4-THF, respectively (Table S3).
A lower amount of Pt decorated on the catalyst surface of
C3N4-MA could be explained by the small lateral sizes of C3N4-
MA that reduced the decorating yield of Pt during hydrogen
reduction in water. The Pt particle sizes and distribution are
shown in Figure 3b. These Pt nanoparticle grain sizes were
typically 2.2 nm, and the size of these particles was mostly in
the range of 1 to 3 nm (Figure S10a,b). The g-C3N4 sheets
acted as a capping agent, and the interaction of Pt cation with
the functional groups of g-C3N4 may prevent agglomeration of
Pt clusters during hydrogen reduction in aqueous solution.
This new method of loading Pt content onto g-C3N4 catalyst
achieved small sizes and good distribution of Pt nanoparticles
on the surface of g-C3N4 sheets in comparison with
photodecomposition and chemical reduction methods.23,31
2.3. Morphology of Solvothermally Modified g-C3N4.
The morphology transformation of g-C3N4 by solvothermal
treatment in the aforementioned organic solvents was
determined by AFM, field emission scanning electron
microscopy (FE-SEM), high-resolution transmission electron
microscopy (HR-TEM), and CS-STEM. The AFM images of
the monolayer of g-C3N4 samples showed that the morphology
had been reformed (Figure 4), and the layer structure had
been modified to form holey g-C3N4 structures (C3N4-IPA and
C3N4-THF) or sheet structures (C3N4-MA and C3N4-DMF).
In particular, the C3N4-DMF sample indicated DMF as the
most appropriate solvent for exfoliation of C3N4-bulk, which
Figure 3. (a) Deconvolution of the XPS Pt 4f spectra of C3N4-MA, formed a monolayer after the reaction and maintained the
C3N4-IPA, C3N4-DMF, and C3N4-THF. (b) HR-TEM image of lateral size of the g-C3N4 sheet (Figures 4d and S4d). The
C3N4-THF and corresponding, (c) Fourier transform (FFT) image,
(d) high-resolution inverse FFT image (IFFT), and (e) lattice fringe
extent of exfoliation during the solvothermal process could be
pattern image, which shows a d-spacing of 0.19 nm (the (200) planes explained by the Hansen parameters of g-C3N4 and organic
of Pt). solvents, representing dispersive, polar, and hydrogen bonding
of the materials (Table S1). O’Neill et al. suggested that the
dispersive Hansen parameter, δD, is the most sensitive factor
nanoparticles, including Pt0 and Pt2+ in PtO. Zero-valent state for graphitic material dispersion ability in solvents, which is
Pt(111) peaks located at ca. 71.4 and 74.9 eV are ascribed to ascribed to the required energy to disperse material in a
the binding energies of Pt 4f7/2 and Pt 4f5/2, respectively. solvent.32 The order of δD in Table S1 could be arranged as
Likewise, the Pt2+ state showed two bands at ca. 72.4 and 75.8 δD(MA) < δD(IPA) < δD(THF) < δD(DMF) < δD(g-C3N4), in
eV.30 Interestingly, C3N4-IPA contained only the Pt0 oxidation which solvent nearer to g-C3N4 shows better peeling of g-
state, C3N4-MA and C3N4-DMF achieved only the Pt2+ state, C3N4-bulk into monolayer. The dispersibility of g-C3N4 in
and C3N4-THF included both Pt0 and Pt2+ states. As shown in organic solvents is related to the physisorption of solvent
Table S2, the O3/Ototal values of C3N4-IPA, C3N4-DMF, adsorbates on the g-C3N4 sheet. The adsorption behavior of
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Figure 4. AFM, HR-TEM, and FE-SEM images of (a,f,k) C3N4-bulk, (b,g,l) C3N4-MA, (c,h,m) C3N4-IPA, (d,i,n) C3N4-DMF, and (e,j,o) C3N4-
THF.

MA, IPA, THF, and DMF on a s-heptazine sheet was further Figure S4b presents a single layer of the C3N4-MA sample,
confirmed by density functional theory (DFT) calculations similar to C3N4-DMF but in smaller lateral layer size, which
using Quantum Espresso with the Perdew−Burke−Ernzerhof results from the strong etching effect of MA solvent on the g-
(PBE) of generalized gradient approximation (GGA). We C3N4 structure, fragmenting the skeleton of the graphitic
noticed that the adsorption strength of DMF was found to be structure into smaller layers. Likewise, the etching phenomen-
higher than that of the other adsorbates (Table S11), which is on was also found for C3N4-IPA and C3N4-THF at different
consistent with the Hansen parameters, resulting in excellent g- ways. While C3N4-IPA interestingly formed a grid structure at
the edge and maintained a sheet structure in the center of the
C3N4 exfoliation by DMF. Of note, IPA has a higher
layer (Figures 4c and S4c), C3N4-THF retained a large lateral
physisorption energy on s-heptazine sheet (ΔE = −0.53 eV)
size and was uniformly etched by THF solvent to achieve a
than THF solvent (ΔE = −0.44 eV), which is opposite the holey g-C3N4 structure with a similar layer size to the initial
dispersive Hansen parameter properties. This result may precursor (Figure 4e). This result indicated that the etching
contribute to the Hansen parameters for choosing the effectiveness is in the order MA >THF > IPA, while the
appropriate solvent for g-C3N4 exfoliation in Table S1. As a polarity strength of solvents is in the order MA > IPA > THF
result, the organic solvent to use for g-C3N4 exfoliation in (Tables S1,S12). The etching level of IPA is still stronger than
order of increasing efficiency could be reorganized as MA < THF, as evidenced by damage to C3N4-IPA’s structure at the
THF < IPA < DMF. edge of the sheet (Figure S4h). The steric effects of IPA on 2D
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Figure 5. (a) AFM topography images of THF-modified g-C3N4 sample, (b) AFM inset image at 10 × 10 μm scale, corresponding to (e) hole size
distribution in AFM image (b), (c) original CS-STEM image of C3N4-THF layer, and (d) image with color added to highlight the typical holes.

g-C3N4 material and highly different of δD(IPA) to δD(g-C3N4) (Figure S4c,m) and the sheet structures of C3N4-DMF (Figure
are the most likely explanation for this result, in which the IPA S4i,n) and C3N4-MA (Figure S4g,l). As a comparison, C3N4-
molecule could not access the center of g-C3N4 stacked layers THF has an appropriate structure, which maintains the lateral
and perform the etching reaction (Table S1 and Figure S35).33 size of C3N4-bulk with a moderate holey structure that keeps
AFM images of the resultant samples and their height the skeletal g-C3N4 2D layer intact (Figure S4e,o). This
profiles are displayed in Figure S4, which was used to morphological structure would lead to the highest level of
determine the thickness of the monolayer g-C3N4 samples, accessible active sites among the samples. HR-TEM confirmed
typically around 3.8 nm (including Pt nanoparticles). We also the morphologies of the structural layers (Figure 4f−j). In
examined the AFM images of THF-modified g-C3N4 to particular, C3N4-THF achieved a good distribution of single-
investigate the thickness of such a monolayer and the hole layer or few-layer form (Figure 4j), compared to the other
distribution of the layer without Pt nanoparticles loaded, which samples. These results confirmed the successful exfoliation of
are shown in Figures 5 S5−S7, and S9 in the Supporting the bulk multilayer g-C3N4 structure into a monolayer of
Information. Through a random position measurement and modified g-C3N4 by solvothermal treatment. As a result, a
different as-prepared samples, THF-modified g-C3N4 was liquid-crystalline dispersion of g-C3N4 in water leads to
observed to have uniform holey defects. In addition, the maximize the catalyst surface accessible active sites, which
thickness of the monolayer C3N4-THF sample without Pt directly affects the catalyst performance in H2 evolution.
nanoparticles was in the range of 0.94−1.85 nm (Figure S9), FE-SEM was used to investigate the surface morphologies of
which is consistent with the above result with Pt nanoparticles dried samples (Figure 4k−o). As shown in Figure 4k, C3N4-
loaded (thickness of the monolayer plus nanoparticle size). bulk exhibited a lamellar structure with a smooth surface,
The hole size distribution is shown in Figure 5, which was in which suggested multilayer stacking during the thermal
the range of 57.7−833 nm and most of the holes had a polymerization process. This graphite-like structure has a low
diameter of ca. 130 nm. The hole density was calculated at 2.23 accessible surface-active site due to its small specific surface
holes/μm2. The CS-STEM image of C3N4-THF layer further area and hydrophobic property, preventing light adsorption
confirmed the holey structure at high spatial resolution (Figure and being unfavorable for absorption of water during the
5c,d). reaction. Further, C3N4-MA displayed a planar surface with
Moreover, the AFM height profiles also confirmed the formation of smaller sized fragments (Figure 4ll), while C3N4-
centered sheet structure with a grid edge shape of C3N4-IPA DMF contained few layers structure and a clear paper-like
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Scheme 2. Proposed SN1 Reaction Pathway of THF Interacting with g-C3N4 at (a) C1 and (b) C2 in the Heptazine Rings

pattern was observed at the edges of the layers due to self- or C2-Ns bonds, resulting in heptazine unit vacancy and
assembly stacking of C3N4-DMF layers during the drying nitrogen deficiency in heptazine units in the structure of C3N4-
process (Figure 4n). Interestingly, C3N4-IPA had a sphere-like THF.
morphology with diameters ranging from hundreds of Based on the experimental results of the AFM nanostruc-
nanometers to a few micrometers (Figure 4m). This formation tures and XPS electronic structures of the samples and DFT
could be explained by the monolayer observed by AFM with a calculations, a possible mechanism of THF solvolysis of g-
centered sheet conjunction and a grid shape at the edge of C3N4 to achieve the holey structure of C3N4-THF is illustrated
layers (Figure 4c), forming a spherical structure to minimize in Scheme 2.
the surface energy. As a result, C3N4-IPA possessed a larger According to charge density DFT calculations, charge
specific surface area, which is 4.65 times greater than C3N4- accumulates on N atoms as N accepts charge (e−) from C
bulk in the SBET results (Table S4). The C3N4-THF sample in the pristine s-heptazine sheet. As a result, charge depletion
showed large sheets of morphology interspersed with holey appears on C atoms (+) (Figure S32). In this SN1 solvolysis
structure in the layers (Figure 4o), and the hybrid structures of reaction, the THF molecule acts as a nucleophile for
layer sheets could lead to extra highly accessible surface-active nucleophilic substitution of C1 or C2 in the s-heptazine
sites, leading to the highest photocatalytic performance in the sheet. Consequently, the C1-Ns bond and the C2-Ns bond are
forthcoming H2 evolution study. broken, causing a heptazine unit vacancy in the C3N4-THF
2.4. Mechanism of Solvolysis of g-C3N4 to Form Holey structure and a nitrogen deficiency in the heptazine unit,
Defect Structure. Results of the DFT study on the charge respectively (Scheme 2). For MA and IPA, only the C1-Ns
density differences for all adsorbates are shown in Figure bond is broken, resulting in skeleton fragmentation in C3N4-
S31a−d. This analysis showed an interaction between the O MA and heptazine unit vacancies in the C3N4-IPA edges,
atom of the adsorbate (Oa) and the C atom of the sheet (Cs). respectively. These processes follow the proposed SN1 reaction
It is to be noted that, in the sheet without any adsorbates, the pathway illustrated in Scheme S1.
charge was distributed only at the N atom (Ns) due to higher 2.5. Optical Bandgap and Charge Carrier Separation
electronegativity of nitrogen than carbon (Figure S32), while and Transfer. As shown in Figure 6a, the UV−vis spectra
after adsorption of DMF, charge density was found on both Cs present the absorption regions of all prepared samples. The
and Ns. This result demonstrates interactions between the Oa observed strong absorption around 320 nm lies in the range
in DMF with both Cs and Ns in aromatic ring (Figure S31d). characteristic for the π−π* electronic transition in aromatic
For MA and IPA adsorbates, this charge distribution was 1,3,5-triazine compounds. An additional absorption, very broad
observed solely on the Cs (Figure S31a,b), suggesting the and weak, was observed in the visible region around 380−390
interaction between Oa and Cs. Particularly, after adsorption of nm, which presumably belongs to n−π* transitions involving
THF, charge densities were found on C1 and C2 of the s- lone pairs of nitrogen atoms in the polymer. Compared with
heptazine sheet (Figure S31c), which suggests that the O atom C3N4-bulk, C3N4-DMF and C3N4-MA displayed a blue shift of
of THF could attack both C1 and C2 atoms to break the C1-Ns the absorption edge, suggesting an increase in bandgap, while
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Figure 6. (a) UV−vis absorption spectra and (b−f) corresponding Tauc plots of energy (eV) and (αhν)2 for all prepared samples.

the two other samples, C3N4-IPA and C3N4-THF, showed a bandgap, but the presence of holey defects decreases the
red shift of the absorption edge. The optical bandgap is bandgap.13 However, the band transitions results demonstrate
attributed to transitions between the weakly localized π−π* that the light-harvesting capability originating from bandgap
states that come from sp2 hybridization of C and N in the g- absorptions of the prepared samples is not sufficient for the
C3N4 framework. The second band transition in the framework visible range of light and has a marginal effect.
occurs due to n−π* at higher wavelengths than the original Interestingly, it is clear that a strong absorption tail (Urbach
bandgap. The values for these two band transitions were tail) is present in the absorption spectra of C3N4-IPA and
determined from the Tauc plot spectra, which were derived C3N4-THF, which gives a significantly lower energy gap of
from UV−vis spectra (Figure 6b−f).34,35 ∼2.48 and 2.52 eV, respectively. In these two cases, the tail
After solvothermal treatment, the original bandgap value absorption (evidenced by UV−vis) can contribute significantly
(π−π* transition) of the C3N4-bulk changed from 3.15 to 3.30, to the absorption of photons with energies lower than the
3.40, 3.10, and 3.15 eV for C3N4-DMF, C3N4-MA, C3N4-IPA, optical gaps, a phenomenon known as enhanced sub-bandgap
and C3N4-THF, respectively. The second transition between absorption. The presence of this tail in the UV−vis spectrum
the bandgap (n−π*) changed from 2.7 in C3N4-bulk to 2.85, may reflect the existence of disorders/defects, which leads to
2.85, 2.65, and 2.75 for C3N4-DMF, C3N4-MA, C3N4-IPA, and formation of localized states extended in the bandgap (known
C3N4-THF, respectively. The increase of optical gaps from the as mid-gap states). This slightly decreased bandgap after
bulk sample to C3N4-DMF, C3N4-MA, is related to layer introduction of holey defects was further confirmed by DFT
exfoliation and the quantum confinement effect (QCE). As we calculations on the densities of states (DOS) for the pristine
previously discussed, these two solvents do not affect holey and holey structures of g-C3N4 (Figure S33). For pristine g-
defects by removing heptazine units. Therefore, the optical C3N4, the conduction band (CB) minimum and valence band
bandgaps widen due to layer exfoliation compared to the bulk. (VB) maximum are all composed of C 2p and N 2p. In the
However, for C3N4-IPA and C3N4-THF, the story is different. holey structure of g-C3N4, the CB minimum and VB maximum
Here, there are two opposing parameters that can alter the are also composed of C 2p and N 2p. From the total DOS, the
optical absorption property. Thus, there is a seesaw relation- ΔEg value (Eg pristine − Eg holey) is approximately 0.04 eV, which
ship between these two parameters; the QCE increases the is in good agreement with the experimental bandgap
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Figure 7. (a) PL emission spectra, (b) EIS Nyquist plots, and (c) TRPL spectra.

calculations. Moreover, the original optical gaps were increased to charge separation and reduced charge recombi-
calculated via UV-DRS graphs, and the data are reported in nation. On the other hand, the low charge recombination
Table S4. The data from UV-DRS are lower than that of UV− observed in C3N4-THF also confirms that mid-gap states
vis because when the powder form of the samples is analyzed, induced by the uniform holey structure do not act as a
due to more stacked layers, a lower bandgap value will be recombination center trapping electron−hole pairs. Instead,
obtained compared to the dispersion of a single layer of sample these mid-gap states serve as separation centers to capture
in solvent due to the QCE, as discussed above. photogenerated electrons and inhibit charge recombination.
It is widely accepted that effective photogenerated electron− This finding is very important because it confirms that
hole pair separation is responsible for enhancing the subsequent holey defects formation does not impair the
photocatalytic activity of a semiconductor material.36 PL, electronic structure of the aromatic system or create abundant
EIS, and TRPL were carried out to explore the intrinsic trap-site defects in C3N4-THF, which can seriously impede
properties of photogenerated charge carrier separation on the charge separation and transfer. In fact, the combinative
surface of as-prepared g-C3N4 samples, as shown in Figure 7. synthesis method successfully merges the above merits created
The photoluminescence (PL) spectra of synthesized C3N4- by exfoliation and uniform holey defect engineering in C3N4-
bulk and solvothermal g-C3N4 were analyzed by PL with an THF, thus exerting a synergistic effect to impeding the charge
excitation wavelength of 340 nm.13Figure 7a shows steady- recombination.
state PL spectra of bulk and solvothermally treated samples at The charge transport process occurring in the samples
340 nm excitation. Compared with C3N4-bulk, solvothermally directly reflects their capacity to shuttle and convey charge
treated samples showed much lower PL peak intensities, carriers to the targeted reactive sites. Thus, EIS measurements
suggesting suppressed photogenerated charge recombination were carried out to obtain deeper insights into the charge
due to an increased charge diffusion rate in the as-prepared transport behavior of the as-prepared catalysts. EIS measure-
aromatic system. C3N4-DMF and C3N4-MA showed lower PL ments investigate the charge-transfer resistance at the catalyst
peak intensities than C3N4-bulk, implying that their ultrathin electrode catalyst/electrolyte interface. A smaller radius of the
thickness of exfoliated nanosheets facilitates the efficient EIS Nyquist plot reflects a smaller resistance for charge carrier
separation and transfer of charge carriers compared to the transfer at the catalyst/electrolyte interface. Among all the
stacked structure. Additionally, the enlarged bandgap due to solvothermally treated samples, C3N4-THF showed the
QCE also promotes the separation of charge carriers. smallest radius of EIS Nyquist plot, demonstrating lower
Meanwhile, the recombination rate decreases more in C3N4- charge-transfer resistance from the catalyst surface to reactant
MA compared to C3N4-DMF because of the formation of molecules (Figure 7b). The charge-transfer facilitation at the
smaller lateral sizes, which reduce the charge diffusion length interface indicates that the uniform holey defects sites at the
compared to bigger layers. C3N4-IPA also exhibited a surface of C3N4-THF do not act as recombination centers even
quenched PL intensity compared to C3N4-bulk and C3N4- as they act as transition energy states for charge carriers to
DMF as a result of formation of thin nanosheets and also holey easily catch reactant molecules. The trend for facilitated charge
defects formation, which together reduced the charge carrier transfer at the interface for the samples confirms that
recombination in the structure. solvothermal treatment of the C3N4-bulk modified the surface
Among all of the samples, the smallest PL peak intensity was properties, which is beneficial for photocatalytic activity
found for C3N4-THF, suggesting that it had the lowest charge enhancement.37
recombination rate, due to the formation of monolayer The recombination lifetime of charge carriers is determined
nanosheets with uniform holey defects. The monolayer by four different types of recombination mechanisms,
including band-to-band, trap-assisted in bulk, Auger, and
structure of the nanosheets will facilitate the charge diffusion
surface recombination. To evaluate radiative/non-radiative
length in the π-conjugated system. The formation of uniform
recombination of photogenerated charge carriers, time-
holey defects and nitrogen deficiencies in the as-prepared
resolved fluorescence decay spectra were obtained under 430
nanosheets provides extra dangling bonds that carry the
nm laser excitation. The value of specific fluorescence lifetime
remaining lone electron pairs or vacant orbitals from the
was fitted following a sum of exponential decay model as
broken bonds. These extra dangling bonds are delocalized to
shown in the following equation38
the aromatic system, thus increasing the charge density and
charge diffusion. Furthermore, the presence of uniform holes in ij yz i yz i yz
F( ) = A1expjjj zz + A 2 expjjj zz + A3expjjj zz
the g-C3N4 sheets facilitate mass transfer in the system and as a j zz jj zz jj zz
result decrease the charge diffusion length, where both of them k 1{ k 2{ k 3{

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where F(τ) is the obtained dynamic attenuation curve, Ai (i =


1, 2, 3) represents the amplitude of the attenuation channel,
and τi is the corresponding lifetime. Three exponentials were
applied to fit the decay model. The average fluorescence
lifetime (τav) is calculated as follows
A1 1 + A 2 2 + A3 3
av =
A1 + A 2 + A3

A well-fitted triexponential decay function with three


excited-state lifetimes and their respective percentages were
used to determine the decay (Figure 7c and Table S5). The
prolonged lifetime of fastest recombination (τ1 and τ2 the
radiative recombination) in C3N4-THF assisted with the
majority of the charge carriers parallel to the steady-state PL
results confirmed that the relaxation of excited electrons
through radiative recombination was strongly suppressed in
the C3N4-THF sample. This phenomenon was observed for
other solvothermally treated samples with the same trend of
steady-state PL results. Indeed, for the surface recombination
(τ3, non-radiative recombination), the results show that the
C3N4-MA sample has the longest lifetime, followed by C3N4-
THF, but the weight ratio of τ3 for C3N4-THF is higher than
that for C3N4-MA. The two other samples exhibit a lower
lifetime for surface recombination. These results demonstrated
that surface defects on C3N4-THF and C3N4-MA can trap the
charge carriers and decrease the probability of radiative
recombination compared to C3N4-IPA and C3N4-DMF. The
average lifetime of charge carriers is shown in the inset of
Figure 7c. Therefore, combined with the above steady-state PL
spectroscopy and EIS data, we surmise that C3N4-THF
possesses the strongest capability to not only separate
photogenerated electron−hole pairs but also transfer them to
reactant molecules adsorbed on surface-active sites, implying
its outstanding competence as a high-performance photo-
catalysis toward H2 evolution.
2.6. Graphene Formation via Solvothermal Treat-
ment of g-C3N4. The new phenomenon of graphene
formation via solvothermal treatment of g-C3N4 was detected Figure 8. Raman spectra and LSCM images of C3N4-THF at different
in this study. The graphene content in the resultant samples sites on the surfaces of the sample: (a,d) at the black spot and (b,e) at
was investigated by an Olympus laser scanning confocal the black blur spot. (c,f) Raman spectra and LSCM images of C3N4-
microscope (LSCM), Raman spectroscopy, thermogravimetric bulk. XRD spectra of (h) C3N4-THF and (g) C3N4-THF residue
analysis (TGA), and high-resolution powder X-ray diffraction (self-assembled graphene/Pt) after annealing the C3N4-THF sample
(HRPXRD). The white color of C3N4-bulk was transformed at 700 °C for 2 h in an Ar atmosphere.
into a light tan color (C3N4-MA, C3N4-IPA, and C3N4-DMF)
or brown color (C3N4-THF) after solvothermal treatment. obtained after annealing for 2 h at 700 °C, while the g-C3N4
Furthermore, LSCM was used to determine the origin of the content in C3N4-THF sample was fully decomposed (Figures
solvothermally modified g-C3N4 samples’ color change from 8h,g and 9). The XRD spectrum of self-assembled graphene/Pt
white color of C3N4-bulk (Figure 8f) to brown color of C3N4- exhibited broad peaks at 24.6 (d-spacing 3.62 Å) and 43.1,
THF. Figure 8d,e reveals the black spot and black blur spot of which are attributed to the d002 and d100 of chemically
graphene nanoparticles that appeared in C3N4-THF samples, converted graphene.23 However, the peaks at ca. 39.8, 46.4,
which caused the brown color of this sample after the reaction. and 67.6 belong to the (111), (200), and (220) crystalline
The Raman spectra of C3N4-THF at the black and black blur planes of the Pt (Figure 8g), respectively.
spots are shown in Figure 8a,b, which confirmed the typical TGA was used to demonstrate the thermal stability and
graphitic structure of graphene with two prominent peaks at graphene content in the as-prepared catalysts. The TGA
1345 and 1599 cm−1, ascribed to the D and G bands of thermograms in Figure 9 show the weight lost by temperature
graphene, respectively.23 In contrast, the C3N4-bulk sample did function for C3N4-bulk, C3N4-MA, C3N4-IPA, C3N4-DMF, and
not show any graphene peaks (Figure 8c). We further C3N4-THF under an argon atmosphere at a ramp rate of 10 °C
investigated the existence and crystalline structure of graphene min−1. The first mass loss below 175 °C is ascribed to the loss
by XRD analysis. The XRD spectra of C3N4-THF and C3N4- of surface hydroxyl groups or water molecules adsorbed at the
THF residue after annealing the C3N4-THF sample at 700 °C surface of the catalysts. The second mass loss, which occurs
in the Ar atmosphere are shown in Figure 8h,g, respectively. above 400 °C, is related to decomposition of the C−N
Self-assembled graphene/Pt as a C3N4-THF residue was framework in g-C3N4. As clearly exhibited in Figure 9, a variety
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Figure 9. TGA thermograms and high-resolution inset of C3N4-bulk, C3N4-MA, C3N4-IPA, C3N4-DMF, and C3N4-THF.

Figure 10. (a) Dependence of the H2 evolution rate on photocatalyst concentration for C3N4-bulk, C3N4-IPA, C3N4-DMF, C3N4-MA, and C3N4-
THF. (b) Averaged H2 evolution rate at the stationary points of the corresponding photocatalyst. (c) Amount of H2 produced vs reaction time of
C3N4-bulk, C3N4-IPA, C3N4-DMF, C3N4-MA, and C3N4-THF at the stationary points.

of rates for the second mass loss were observed for different g- C3N4 framework. The C3N4-bulk has the highest Tons and the
C3N4 samples. Two factors can be discussed, the onset lowest mass loss rate, which are associated with the stacked
temperature (Tons) and the mass loss rate. The first parameter graphitic structure. The changes of these two parameters for
of Tons shows the temperature that decomposition of the C−N solvothermally treated samples are related to the structural
framework begins, and the second parameter (mass loss rate, changes compared to the bulk material. Exfoliation of the
Figure S16) depicts the decomposition rate of the structure. layers decreased the onset temperature and increased the mass
Both parameters are related to the thermal stability of the g- loss rate of C3N4-DMF. Changes of these parameters were
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more pronounced after fragmentation of the exfoliated layers the literature are listed in Table S10. The 2D holey structured
that occurred in C3N4-MA. Moreover, introduction of holey C3N4-THF achieved high performance of H2 evolution among
defects in C3N4-IPA and C3N4-THF led to the greatest all recently reported g−C3N4-based photocatalysts.
changes, where the lowest Tons and highest mass loss rates were We proceeded to study the main factors that contributed to
obtained for C3N4-THF. photocatalytic performance based on the above results,
The remaining weights of C3N4-DMF, C3N4-MA, C3N4-IPA, including oxygen doping, self-assembled graphene formation,
and C3N4-THF at 550 °C were 74.87, 38.71, 18.79, and 3.93 platinum co-catalyst oxidation states, nanostructure of the
wt %, respectively. The high-resolution TGA thermograms resultant catalysts, electronic band structure, and holey defects
showed the remaining residue of the resultant samples at 700 creation. Oxygen doping promotes the photocatalytic perform-
°C (inset of Figure 9). The approximate graphene content in ance of g-C3N4.27−29 The results in Table S2 (O2/Ototal) show
the catalysts was calculated after subtracting the Pt percent by that after solvothermal treatment of the C3N4-bulk, the oxygen
ICP-OES, as displayed in Table S6. The total amount of Pt and content of the samples in the form of doping increased, which
graphene in C3N4-THF was 3.81 wt %, higher than that of the demonstrated that oxygen doping improved the photoactivity
other samples, which contributed to better photocatalytic in solvothermally treated samples compared to the bulk
performance. Graphene, an exceptional electrical conductivity sample. Comparing the values of (O2/Ototal) for solvother-
2D material, could promote charge collection and separation at mally treated samples does not give us a particular trend that
the interface surface of the photocatalyst due to its role as a can explain the different photocatalytic activity among them. A
photoelectron mediator and acceptor.39 The graphene content second parameter that can improve the photocatalytic activity
in C3N4-DMF, C3N4-IPA, C3N4-MA, and C3N4-THF was of C3N4-bulk after solvothermal treatment is graphene
determined at 0.68, 0.94, 1.26, and 1.53 wt %, respectively formation, which occurred in all the four different organic
(Table S6). C3N4-IPA contains more graphene than C3N4- solvents at different weight percent values. Graphene formation
DMF, but its photocatalytic H2 evolution is lower (Figure contributed to local active sites as a photoelectron mediator
10b). Accordingly, although graphene improved the photo- and acceptor, which boost electron charge carrier separation
catalyst performance incrementally, it was not the main factor and transport, preventing electron recombination in all
enhancing C3N4-THF’s photoactivity significantly. The role of solvothermally treated samples.39 A co-catalyst (Pt) would be
self-assembled graphene by solvothermal g-C3N4 in photo- a leading factor whenever the catalyst had identical properties,
catalytic performance is still being investigated, where all of the but different structures of g-C3N4 were deposited with Pt
other factors affecting the catalyst performance are fixed. species. Another parameter that should be considered is
2.7. Photocatalytic Performance and Mechanism. The accessible active surface area. The exfoliation process of bulk g-
photocatalytic activity toward hydrogen evolution measure- C3N4 via solvothermal treatment to achieve the 2D monolayer
ment was optimized to assess the photocatalytic performance g-C3N4 in reaction media was the key to maximize accessible
of the solvothermally modified g-C3N4 materials. The surface-active sites of the resultant catalysts. Based on the
evaluation system and assessment method were considered theoretical surface area of fully exposed 2D material sheets, the
for more accurate and transparent photocatalyst performance, g-C3N4 monolayer dispersed in water could fabricate a liquid-
which enables the comparison of different photocatalytic crystalline g-C3N4 dispersion that reaches the maximum
hydrogen evolution systems.40 The detailed method is shown surface area in reaction media value. All of the reasons
in the Supporting Information (Section S3), which includes mentioned above together contribute to boosting the activity
the specified reaction conditions, photocatalyst concentration of solvothermally treated g-C3N4 compared to the bulk
at the stationary point, optimized H2 production rate, apparent material.
quantum yield (AQY) calculation, turnover frequency H2 The questions then are what is the main reason for the
evolution (TOF) calculation, and equipment calibration. photoactivity differences among the solvothermally treated
Under 1 Sun illumination of a solar simulator, the average samples and how does solvothermal treatment in different
H2 evolution rates at the stationary point of C3N4-bulk, C3N4- organic solvents alter the photoactivity so significantly?
IPA, C3N4-DMF, C3N4-MA, and C3N4-THF were as high as at Based on the basic rules for photocatalysis, the efficiency of a
2242.8, 10999.1, 12531.1, 16595.6, and 31256.9 μmol h−1 g−1, photocatalyst is determined by the synergistic effects of three
respectively (Figure 10). The stationary points of C3N4-THF basic steps of photocatalysis, (i) light absorption, (ii) charge
and C3N4-DMF samples were obtained at 0.1 mg mL−1. These separation, and (iii) surface transfer of photogenerated charge
samples had a similar lateral size, where C3N4-THF and C3N4- carriers. Here, we attempt to clarify the different photo-
DMF maintained the layer’s size after the solvothermal activities of the samples based on these three basic rules.
reaction (Figures 4 and S4). However, the highly etched The photocatalytic activity of C3N 4-THF toward H2
C3N4-IPA and the smallest lateral size C3N4-MA sample evolution achieved the highest value among the samples
achieved the stationary point at a lower concentration of 0.05 (Figure 10). In the case of C3N4-THF, the introduction of a
and 0.025 mg mL−1, respectively. The C3N4-bulk sample, uniform holey structure and nitrogen-deficient framework not
which had the largest lateral size and highest agglomeration, only extends the visible light absorption range but also
obtained the stationary point at 0.2 mg mL−1. Notably, the suppresses radiative electron−hole recombination as demon-
photocatalyst performance at the stationary points had an strated by PL results, whose origin is the increased low-energy
inverse relation with the lateral size of nanosheets. photon excitations and band-to-tail charge-transfer processes
Remarkably, the holey defect C3N4-THF sample performed induced by the increased mid-gap states close to the band
a superior H2 evolution rate, which is 13.9, 2.8, 2.5, and 1.9 edges. These factors favor the proceeding of photocatalysis
times higher than those of C3N4-bulk, C3N4-IPA, C3N4-DMF, reactions. In addition to these electronic structure-induced
and C3N4-MA samples, respectively. For comparison, the favorable features, the presence of uniform holey defects
superior H2 evolution performance of solvothermally modified combined with nitrogen deficiency assisted with the existence
g-C3N4 catalysts and recent various g−C3N4-based materials in of dangling bonds in the layer structure play an important role
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Figure 11. Schematic illustration of the photocatalytic mechanism for C3N4-THF under simulated sunlight irradiation.

in geometrically shortening the diffusion lengths of both the like structure also exists in C3N4-IPA. This kind of grid
photoexcited electrons from the interior to edges of the layers formation can damage the π-conjugated structure, resulting in
and reactants from the surface to the interior of a particle along decreased photoactivity. The original UV−vis spectra (Figure
with the interlayer galleries. This structure also favors the S15a) of the samples in solution form show the intensity of
photocatalysis reaction by lowering the bulk recombination absorption in the π−π* and n−π* transition area for the
probability of electrons and holes and also promoting mass (band−band transition) for C3N4-IPA is the lowest. Following
transport. However, in the case of C3N4-MA, just a decrease in this data, the π−π*/Ctotal ratio calculated from the XPS C 1s
charge carrier recombination participates in increasing photo- core-level spectra (Table S2) gave the lowest value for C3N4-
activity. Compared to C3N4-THF, here light absorption did IPA. Both results confirm that IPA disrupts the π-conjugated
not show any enhancement and no mid-gap states produced. structure in some parts of the nanosheet, which sharply
Although the formation of small nanosheets will increase edge reduces the photocatalytic activity.
sites for the reduction process and decrease charge diffusion PtO and metallic Pt nanoparticles play critical roles as active
length for electrons to catch the reactants, the formation of sites for H2 evolution on the host photocatalyst surface. In a
small nanosheets compared to the larger ones in C3N4-DMF previous study, we demonstrated that Pt2+ sites (in PtO) on g-
increases the charge transport rate along with the layer, as C3N4 improved the hydrogen evolution rate by their favorable
clearly shown in PL spectra, with the lower recombination water adsorption along with hydrogen intermediate desorption
obtained in C3N4-MA. A strange phenomenon occurred for and prevented the irreversible hydrogen evolution.41 C3N4-IPA
C3N4-IPA which has a lower bandgap, lower recombination showed higher than C3N4-DMF in optical properties, specific
rate than C3N4-DMF, and also has hole defects in the surface area, and charge transfer. However, its photocatalytic
structure. However, C3N4-IPA had the worst photocatalytic H2 evolution rate is lower than C3N4-DMF (Figure 10b)
activity among all solvothermally treated samples. Although because the C3N4-DMF sample formed a higher proportion of
holey defects appear on the nanosheets, in some parts, a grid- Pt2+ sites, and C3N4-IPA achieved only metallic Pt sites (Pt0)
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(Figure 3a). The C3N4-THF sample, which had the highest H2 performs a strong etching effect that fragments the skeleton
evolution rate, obtained both Pt0 and Pt2+ oxidation states, of the g-C3N4 layer into smaller size, while IPA produces an
suggesting that a composite of Pt and PtO could play a key role etching effect at the edges of g-C3N4 sheets but preserves the
in photocatalytic H2 evolution enhancement. The average centered planar structure, resulting in an interesting sphere-like
number of H2 evolution occurred on Pt-based sites per hour structure. DMF was found to be an excellent solvent for g-
(TOF) of C3N4-THF is 3.62, 3.07, and 2.49 times higher than C3N4 exfoliation without creating a holey structured material.
C3N4-IPA, C3N4-DMF, and C3N4-MA, respectively (Table The newly observed phenomenon of self-assembled graphene
S9). This result confirmed the effectiveness of H2 evolution on
creation via solvothermal treatment of g-C3N4-bulk was
Pt0/Pt2+ sites of C3N4-THF in compared to C3N4-IPA (only
introduced, which contributed to photocatalytic performance
Pt0), C3N4-DMF (only Pt2+), and C3N4-MA (only Pt2+). C3N4-
THF was further treated with hydrogen and air to obtain due to the photoelectron mediator and acceptor role for
purely metallic Pt site (Pt0) and Pt2+ sites, respectively, graphene in the resultant samples. Through DFT calculations
described in Section S3.6, Supporting Information. As a result, and experimental results, the mechanism of creating holey
the average H2 evolution rates at the stationary point of C3N4- structures and N vacancies was proposed. Beside Hansen
THF, oxygenated C3N4-THF, and hydrogenated C3N4-THF parameters, DFT adsorption energy calculation of used organic
were 31256.93, 27272.99, and 23410.06 μmol h−1 g−1, solvents on g-C3N4 sheets provided different behaviors of
respectively (Figure S28). The photocatalytic H2 evolution of solvents for the solvolysis reaction of g-C3N4. The high
oxygenated C3N4-THF and hydrogenated C3N4-THF were production yield of g-C3N4 from DCDA and good stability of
reduced by 12.7 and 25.1% compared to C3N4-THF, solvothermal modification of g-C3N4 made this method highly
respectively. The results of this experiment were consistent promising for mass production of sustainable photocatalyst for
with the previous report.41 They provided information for green hydrogen production.
further research, such as optimizing the ratio of Pt/PtO co-
catalyst on photocatalysts for enhanced H2 evolution.
4. EXPERIMENTAL SECTION
The high H2 evolution performance of the as-prepared g-
C3N4 photocatalysts also exhibits good stability. The storage of 4.1. Materials and Characterization. A detailed
the photocatalysts in the air for over 11 months has shown no description of the employed instrumentation, holey defect g-
detectable change in their structure and optical properties. C3N4 synthesis, decoration of platinum nanoparticle proce-
Furthermore, the photocatalytic activity of C3N4-THF can be dure, and the photocatalytic H2 evolution measurement
well retained even after keeping the sample in the solution for method used in the present study can be found in the
340 days, as shown in Figure S29. Supporting Information. Full characterization of the as-
The mechanism of the photocatalytic activity process for H2 prepared catalysts and the electrochemical measurement
evolution is illustrated in Figure 11. Under simulated sunlight procedure also appear in the Supporting Information.
irradiation, the solvothermally modified g-C3N4 samples
4.2. General Procedure for the Synthesis of Holey
(Figure 11c−e) and EY (Figure 11a,b) absorb photons that
Defect g-C3N4 through the Solvothermal Method.
supply energy higher or equal to the intrinsic bandgap of them.
Next, the electrons are excited and transfer from the VB to the Typically, 1 g of the as-prepared g-C3N4 sample was added
CB and release positive holes in the VB. At the same time, after into a 100 mL vial, containing 70 mL of either methyl alcohol
adsorbing photons, EY reacts with TEOA to form EY−, which (MA), isopropyl alcohol (IPA), tetrahydrofuran (THF), or
transfers electrons to the CB of g-C3N4.42 Subsequently, N,N-dimethylformamide (DMF), followed by sonication for 6
electrons move to the Pt co-catalyst particles (Figure 11b,d), h (JeioTech UC-10, 200 W). The ultrasonic bath temperature
or graphene layers on the surface of solvothermal g-C3N4 was kept around 25 °C by cooling water. The mixed
(Figure 11a,e), or g-C3N4 surface-active sites (Figure 11c), suspension was transferred into a high-pressure microreactor
where H+/H2O is reduced to form H2 molecules. Meanwhile, (stirred reactor, HR-8200, Hanwoul Engineering, Korea), and
generated holes in the VB can be oxidized and consumed by the solvothermal reaction was performed at 200 °C for 6 h.
TEOA. The pressure of the reaction medium was observed during the
process, which gave working pressures of 42, 25, 20, and 2 bar
3. CONCLUSIONS corresponding to the reacted organic solvents MA, IPA, THF,
Engineering holey defects on 2D g-C3N4 nanosheets were and DMF, respectively. After the reactor had naturally cooled
successfully accomplished by a facile solvothermal method in to ambient temperature, deionized water was exchanged for
organic solvents. THF facilitates formation of a uniform holey the solvents in this study. The solid-to-liquid ratio of the
structure of g-C3N4 but maintains the lateral size along with N obtained suspension was calculated, and then, the sample was
vacancies in the heptazine units. The introduction of a uniform diluted with deionized water to prepare a 0.2 mg mL−1
holey structure for C3N4-THF creates mid-gap states that suspension in the triple-neck round-bottom flask (Duran,
reduces the recombination centers for trapping charge carriers,
Germany).
shortens the charge diffusion length, enhances the mass
4.3. Computational Methods. The Supporting Informa-
transfer, and increases the charge separation. Pt-oxidation
states hold an important role if water adsorption and hydrogen tion contains detailed information on the DFT that was
intermediate desorption. It is found that the mixture of Pt/Pt2+ employed in this study. The adsorption behavior of solvents on
sites performs higher photocatalytic hydrogen evolution. As a s-heptazine sheet, geometry optimization and structural
result, holey defect C3N4-THF achieved superior photo- relaxation, HOMO−LUMO, density of state, van-der-Waals
catalytic H2 evolution at the stationary point, which was (vdW) interactions of the adsorbed molecule with s-heptazine,
13.9, 2.8, 2.5, and 1.9 times higher than that of C3N4-bulk, and the charge density of the samples were performed using
C3N4-IPA, C3N4-DMF, and C3N4-MA, respectively. MA Quantum Espresso and VESTA software.
13777 https://doi.org/10.1021/acscatal.2c03523
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*
ASSOCIATED CONTENT
sı Supporting Information
Won Mook Choi − School of Chemical Engineering,
University of Ulsan, Ulsan 44610, Republic of Korea;
orcid.org/0000-0002-1452-9488
The Supporting Information is available free of charge at
https://pubs.acs.org/doi/10.1021/acscatal.2c03523. Complete contact information is available at:
https://pubs.acs.org/10.1021/acscatal.2c03523
Materials and characterization information; general
procedure for the synthesis of solvothermally treated g- Author Contributions
C 3N 4 photocatalyst; new method for decorating The manuscript was written through contributions of all
platinum nanoparticles on g-C3N4 by hydrogen reduc- authors. K.C. Bhamu performed the DFT calculation. All
tion in aqueous solution; photocatalytic H2 evolution authors have given approval to the final version of the
measurement method; electrochemical measurement; manuscript.
photocatalytic H2 evolution performance optimization;
Notes
Hansen parameters for the solvents and g-C3N4, FT-IR
The authors declare no competing financial interest.
survey spectra, XPS survey spectra, calculation of
delocalized π−π electron system on C 1s and N 1s
XPS data, deconvolution of O 1s XPS spectra, AFM
images of samples with their height profiles, ICP-OES
■ ACKNOWLEDGMENTS
This research was supported by the National Research
data, HR-TEM images C3N4-THF and particle size Foundation of Korea (NRF) grant funded by the Korea
distribution, FE-SEM images, HR-TEM images and the government (MSIT) (no. 2020R1A4A4079954). This result
corresponding STEM elemental mappings (C, O, N, and was supported by the Regional Innovation Strategy (RIS)
Pt), N2 adsorption−desorption isotherms, textural and through the National Research Foundation of Korea (NRF)
bandgap data, UV-DRS of powder samples and funded by the Ministry of Education (MOE) (2021RIS-003).
corresponding Tauc plots, radiative fluorescence life-
times and their corresponding percentages of photo-
excited charge carriers, approximate calculation of
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