International TeR Rectifier PD - 912570 IRLML2402 HEXFET® Power MOSFET ‘+ Generation V Technology © Ultra Low On-Resistance > ‘© N-Channel MOSFET Voss = 20V © SOT-23 Footprint k © Low Profile (<1.1mm) ltt ‘© Available in Tape and Reel Rosen) = 0.250 © Fast Switching s oa) Description Frith Generation HEXFETs from Intematonal Rectfler Uutize advanced processing techniques fo achieve ‘extremely low on-resistance per siicon area. This benef ‘combined wih the fast switching speed and ruagedzed P ence design that HEAFET Power MOSFETS are wall known for provides he designer wih an exiemely ficient , and relabi device for usein a wide vay of appeatone. ee A customized leatame has been incorporated into the . standard SOT-23 package to produce a HEXFET Power Micros MOSFET with the industry smalst footprint This package, dubbed the Micto3, Ie ideal for applications where pntedcrcutboard pace'sata premium Thelow Prefie (<1. tm) ofthe Mire3 alowsit tof easly into Extremal in apeleaton enaronments such as portale tlectoniés and PCMCIA cards ‘Absolute Maximum Ratings Parameter Max Units Tp@ T= 2S — | Connaaws Ban Curent. Vas @ 450 i bes Cornovs ran Curr. Vas @ 45¥ Leg a ow es Drain Curent 0 Ta Po@T wer Diss Bio = ‘near Deaing Factor 43 mare ‘Gatedo-souce vatage zt v Fesk Dede Recovery avo, 50 Vi Tunston and Soaps Teperaars Range Be cs Thermal Resistance Te. Max Units Fa = 0 "cluIRLML2402 International TR Recifier Electrical Characteristics @ T, = 25°C (unless otherwise specified) Parameter ‘in. Typ. a [ Us] Conditions Visgsas | OranioSource Srentdown Vatows —| 20 [—[—| V | Vers 07 b= 0A ‘ees eatcown Vala Tong. Coeticent_| — [oun] — | Wro| Retrncote 25°. asa cnfawnce [—l—le] [Verrtev n= 0mne Vaan | Gate Thesis Vetage ore} — os Fone Taneconutaree [=.= a ee , GaSe Saree Farad Usage =a ls | Gatete source Revere Lestage | —[—| 100 i Teil Gato Caroe =Szefs0 Gig | Geto Sauer CHE [ear [oae| ne | vows vey ‘Qiao Dran (er) Charge = har ‘age | Twr-On aly Tine =est— i ise Tne Se an | Torso Oaiy Tine =e t Fal Tine SSB, |_| R= 110.540 Fg 100 Caz Wt Capacione =o] =] —]Ves= or ‘Ge | OutatCapactanea Pst T=] oF | vos= 18 Can Reverse Tare CapRSRRES Seta] | Petite seria 5 Source-Drain Ratings and Characteristics Parameter in| Typ. [ Unt ‘ondtions ie ontmapos Saree Cure WOSFET sma! (Body Die) TlH] |g | sonra me Toe used Sauce Cue Tahara | * | meatal revrce (Body bese! | junction oe. Vag | Did Fowara Vataoe SPS e 7 ws 00k OTE te Reverse Recovery Te [os [38 ae sae = 0mm ct eves RECA CREE Pie ae [ae | ata one (© Repti rating: use with ited by ‘rar nncton temperate (Sex fg 11) 2 igo #0998, et = SON, Veo 2 Vanoss Tete 1 Pulse wah 0045; ty cytes 2% © ‘Siete mantedon FRA ¢ SaneInternational IRLML2402 Tar Rectifier Package Outline ern 9729770288) Ste Ses ae Sie] uae as T° . tert tert as stent fae = PT ess) meme 3 HL STEARIC Se FL (Gi beansone conor mete woLD FLASH Part Marking Information Micros ($07.23 70.2360)International Tape & Reel Information mero (807-270-2384) Dinareone at shown miimetrs (hehe) sy tte nF | : Neg ee) reeoomecron | Lge ote sa 1 i . Internationa’ ToR Rectifier IR WORLD HEADQUARTERS: 233 Kansas St, El Segundo, Callomia 90245, USA Tel (310) 252-7105, ‘TAC Fax: (310) 252-7903 Vis us a wwit.com for ales cantactnfrmation: 0103