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On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
2SC2570A
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges.
FEATURES
• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz
• Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz
ORDERING INFORMATION
2SC2570A-T 2.5 kpcs/box (Box type) • Supplying paper tape with in a box
Collector Current IC 70 mA
Note
Total Power Dissipation Ptot 600 mW
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10207EJ01V0DS (1st edition) The mark • shows major revised points.
(Previous No. P10404EJ3V0DS00)
Date Published April 2003 CP(K) NEC Compound Semiconductor Devices 1980, 2003
Printed in Japan
2SC2570A
DC Characteristics
RF Characteristics
hFE CLASSIFICATION
Rank E
Marking E
Free Air
1
600
Cib
400
0.5
200
0.3
0 25 50 75 100 125 150 0.4 0.5 1 2 3 5 10 20 30
Collector to Base Voltage VCB (V)
Ambient Temperature TA (˚C) Emitter to Base Voltage VEB (V)
100
DC Current Gain hFE
10
50
5
20
1
0.5 10
0.5 0.6 0.7 0.8 0.9 0.5 1 5 10 50
0.5
0.2
0.1
0.5 1 5 7 10 50 70
10 10
5 5
VCE = 10 V VCE = 10 V
IC = 5 mA IC = 20 mA
0 0
0.05 0.1 0.2 0.5 1 2 0.05 0.1 0.2 0.5 1 2
f = 1 GHz 6
Noise Figure NF (dB)
5
10
4
3
5
2
0 0
0.5 0.7 1 5 7 10 50 70 0.5 0.7 1 5 7 10 50 70
IC = 5 mA
ZO = 50 Ω
ZO = 50 Ω
IC = 20 mA
VCE = 10 V
VCE = 10 V
WAVELENG WAVELENG
0.49 0 0.01 THS T
0.49 0 0.01 THS T
0.02 OWAR 0.02 OWAR
0.48 0.01 D 0 0.49 D 0.48 0.01 D 0 0.49 D
7 0.48 0.0 GEN
3 7 0.48 0.0 GEN
3
0.4 0.02WARD LOA
TO REFLECTION COEFFICIENT
ER
A 0.4 0.02WARD LOA
TO REFLECTION COEFFICIENT
ER
A
. IN DEGR 0.4
7 . IN DEGR 0.4
7
46 0 .03GTHS ANGLE OF EES 0.0 TOR
4 6 0 .03GTHS ANGLE OF EES 0.0 TOR
0. 4
ELEN 60
1 0.4 4 0. 4
ELEN 60
1 0.4 4
0.0WAV − 0 6 0.0WAV − 0 6
5 0.0 5 0.0
0.1
0.1
0.1
0.1
0.4 5 50 15 0.4 5 0.4 5 50 15 0.4 5
0 5 0 5
0.2
0.2
−1 −1
0.2
0.2
0.0 0. 0.0 0.
44 0.1 0. 06 44 0.1 0. 06
0. 06 POS 14 0. 06 POS 14
0.3
0.3
40 44 40 44
0.3
0.3
0. EN T ITIV 0 0. E NT ITIV 0
−1 PO N ER −1 PON ER
OM E AC OM EAC
EC T EC T
4
4
0.
0.
07
07
0.
0.
0.
0.
07
07
0.
0.
4
4
NC NC
TA TA
0
+ ANCE + ANCE
0. 43
0. 43
0. 43
0. 43
3
3
0.2 JX C 0.2 JX C
13
13
EAC −JX O EAC −JX O
0
0
−1
−1
Zo MP Zo MP
E R Zo O E R Zo O
8
TIV TIV
NE
NE
8
8
0.4
0.4
GA
GA
0.5 0.5
0.4
0.4
N
0.5 0.5
NT
T
0.0 2
0.0 2
0.0 2
0.0 2
NE
NE
0.3 0.3
02
20
12
12
0
1
1
0
0
−1
−1
0
9
9
0.0
0.6 0.6
9
.09
0.4
0.4
0.4
0.6 0.6
1
.41
0.0
0.0
0.4 0.4
0
0.7 0.5 0.7 0.7 0.5 0.7
110
110
0.40
0.40
0.10
0.10
−11
−11
0.10
0.10
0.40
0.40
S11e
0.6 0.6
0.8 0.8 0.8 0.8
0.8
0.7 0.7
0.39
0.39
0.11
0.11
0.11
0.11
RESISTANCE
0.39
0.39
100
100
−100
−100
1.0
Zo
R
Zo
0.8
0.9 0.9
0.6
1.0
0.12
0.12
0.4
0.38
0.38
0.38
0.38
0.12
0.12
COMPONENT
0.2
90
90
−90
−90
0.2
0.2
0.2
0.2
0.2
0.2
1.5 GHz
0.4
0.4
0.4
0.4
1.2 1.2
0.4
0.4
0.4
0.4
0.13
0.37
0.13
0.37
0.37
0.13
0.37
0.13
0.6
0.6
0.6
0.6
0.6
0.6
0.6
0.6
1.5 GHz
8
8
0.
0.
1.2 1.4 1.2 1.2 1.4 1.2
8
8
0.
0.
0.8
0.8
0.8
0.8
80
1. 0 1. 0
−80
−80
0 1.6 1. 0 1.6 1.
1.0
1.0
1.0
1.0
0.36
0.36
0.14
0.14
0.14
0.14
0.36
0.36
0.2
1.8 1.8
S22e
S22e
1.0
0.35
0.35
0.15
0.15
70
70
−70
−70
0.15
0.15
0.35
0.35
1.6 1.6
1.6 6 1.6
6
0.4
4
4
0.3
0.3
3.0 3.0
0.4
0.1
0.1
4
4
0.1
0.1
1.8 1.8
0
0
1.8 1.8
0.3
0.3
6
6
60
60
−6
−6
0.2
2.0 2.0
2.0 4.0 2.0 4.0
3
3
3
3
0.1
0.1
0.1
0.1
0.3 7
0.3 7
0.3 7
0.3 7
5.0 5.0
0
0
50
50
−5
−5
0.2
0.
0.
32
32
0.
0.
32
32
0. 18
0. 18
0
0
0. 18
0. 18
3.
3.
3.
3.
0
0
19
0 10 40 0.
19
0 10 40 0.
−4 0. 31 −4 0. 31
4.0
4.0
4.0
4.0
0. 31 19 0. 31 19
0. 0.
20 20
5.0
5.0
5.0
5.0
0 0 30
0.3 0 0 30
0.3
50 50
0.2 0 −3 0.2 0 0.2 0 −3 0.2 0
0 0
10
10
10
10
20
0.3
20
0.3
20
20
50
50
1 0.2 1 0.2
50
50
0.2 9 −20 20 0.2 9 −20 20
0.2 9 0.2 9
0.2 2 10 0.2 1 0.2 2 10 0.2 1
0.2 −10 0 8 0.2 −10 0 8
8 0.2 8 0.2
0.2 0.23 0.27 2 0.2 0.23 0.27 2
0.24 0.25 0.26 0.23 0.24 0.25 0.26 0.23
0.27 0.24 0.27 0.24
0.26 0.25 0.26 0.25
5
2SC2570A
2SC2570A
PACKAGE DIMENSIONS
5.5 MAX.
0.5
12.7 MIN.
2.54
1.27
1.77 MAX.
4.2 MAX.
1 2 3
PIN CONNECTIONS
1. Base EIAJ : SC-43B
2. Emitter JEDEC : TO-92
3. Collector IEC : PA33
• The information in this document is current as of April, 2003. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
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(Note)
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.
and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
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M8E 00. 4 - 0110