Professional Documents
Culture Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
BCR20KM-12L
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
REJ03G0467-0200
Rev.2.00
Nov.09.2004
Features
• IT (RMS) : 20 A • Viso : 2000 V
• VDRM : 600 V • Insulated Type
• IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5 • Planar Passivation Type
Outline
TO-220FN
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Voltage class
Parameter Symbol Unit
12
Repetitive peak off-state voltageNote1 VDRM 600 V
Non-repetitive peak off-state voltageNote1 VDSM 720 V
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0/3.0 mA Tj = 125°C/150°C, VDRM applied
On-state voltage VTM — — 1.5 V Tc = 25°C, ITM = 30 A,
Instantaneous measurement
Gate trigger voltageNote2 Ι VFGTΙ — — 1.5 V Tj = 25°C, VD = 6 V, RL = 6 Ω,
ΙΙ VRGTΙ — — 1.5 V RG = 330 Ω
ΙΙΙ VRGTΙΙΙ — — 1.5 V
Gate trigger currentNote2 Ι IFGTΙ — — 30Note5 mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
ΙΙ IRGTΙ — — 30Note5 mA RG = 330 Ω
ΙΙΙ IRGTΙΙΙ — — 30Note5 mA
Gate non-trigger voltage VGD 0.2/0.1 — — V Tj = 125°C/150°C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 2.0 °C/W Junction to caseNote3
Critical-rate of rise of off-state (dv/dt)c 10/1 — — V/µs Tj = 125°C/150°C
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Performance Curves
102 160
7 Tj = 150°C
5
3 120
2
101 80
7
5
3 Tj = 25°C 40
2
100 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 100 2 3 5 7 101 2 3 5 7 102
101
Gate Trigger Current (Tj = t°C)
Gate Voltage (V)
7 3
5 2
PG(AV) =
3 VGT = 1.5V
2 0.5W
IGM = 102 IFGT I
100 2A 7
7
5 5
IFGT I, IRGT I, IRGT III
3
3 IRGT I
2
2 IRGT III
10–1
7 VGD = 0.1V
5 101
101 2 3 5 7102 2 3 5 7 103 2 3 5 7 104 –60 –40 –20 0 20 40 60 80 100 120 140 160
103 2.4
7 Typical Example 2.2
5 2.0
Gate Trigger Voltage (Tj = 25°C)
4
1.8
Gate Trigger Voltage (Tj = t°C)
3
2 1.6
1.4
102 1.2
7 1.0
5 0.8
4
3 0.6
2 0.4
0.2
101 0.0
–60 –40 –20 0 20 40 60 80 100 120 140 160 10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
60
10 40
360° Conduction
20 Resistive,
inductive loads
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
60 Curves apply 60
regardless of
40 conduction angle 40
Resistive,
20 inductive loads 20
Natural convection
0 0
0 5 10 15 20 25 30 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
5 103
3 Typical Example Typical Example
7
Repetitive Peak Off-State Current (Tj = 25°C)
2
Repetitive Peak Off-State Current (Tj = t°C)
5
105 4
7
Holding Current (Tj = 25°C)
5 3
Holding Current (Tj = t°C)
3 2
2
104
7 102
5
7
3
2 5
4
103
7 3
5
2
3
2
102 101
–60 –40 –20 0 20 40 60 80 100 120 140 160 –60 –40 –20 0 20 40 60 80 100 120 140 160
× 100 (%)
103 160
7 Typical Example
5 140
Distribution
3
T2+, G–
Latching Current (mA)
× 100 (%)
Rate of Rise of Off-State Voltage (Tj=125°C) Rate of Rise of Off-State Voltage (Tj=150°C)
160 160
Typical Example Typical Example
140 Tj = 125°C 140 Tj = 150°C
Breakover Voltage (dv/dt = 1V/µs)
120 120
80 80
III Quadrant
60 60
40 I Quadrant 40
I Quadrant
20 20
0 0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs) Rate of Rise of Off-State Voltage (V/µs)
7 (dv/dt)c VD
7 (dv/dt)c
Tj = 125°C Tj = 150°C
Commutating Voltage (V/µs)
VD
5 Main Current 5 Main Current
IT (di/dt)c IT = 4A IT (di/dt)c IT = 4A
3 τ τ = 500µs 3 τ τ = 500µs
Time Time
2 VD = 200V 2 VD = 200V
f = 3Hz f = 3Hz
101 101
I Quadrant
7 7
Minimum III Quadrant
5 Characteristics 5
Value III Quadrant
3 3
Minimum
2 2 Characteristics
Value
I Quadrant
100 100
7 7
3 5 7 101 2 3 5 7 102 3 5 7 101 2 3 5 7 102
3 IRGT I
Gate Trigger Current (DC)
Gate Trigger Current (tw)
102
7
5
3
2
101 0
10 2 3 5 7 101 2 3 5 7 102
Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac
6Ω 6Ω Load
C1
A A R1
6V 6V C0 R0
V 330Ω V 330Ω
C1 = 0.1 to 0.47µF C0 = 0.1µF
Test Procedure I Test Procedure II R1 = 47 to 100Ω R0 = 100Ω
6Ω
A
6V
V 330Ω
Package Dimensions
TO-220FN
EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material
2.0 Cu alloy
6.5 ± 0.3
3 ± 0.3
15 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25 2.54 ± 0.25
4.5 ± 0.2
Dimension in Millimeters
Symbol
Min Typ Max
2.6 ± 0.2
A
A1
A2
b
D
E
e
Note 1) The dimensional figures indicate representative values unless x
otherwise the tolerance is specified. y
y1
ZD
ZE
Order Code
Standard order
Lead form Standard packing Quantity Standard order code
code example
Straight type Plastic Magazine (Tube) 50 Type name +B BCR20KM-12LB
Lead form Plastic Magazine (Tube) 50 Type name +B – Lead forming code BCR20KM-12LB-A8
Note : Please confirm the specification about the shipping in detail.