Solar Energy 225 (2021) 91–96

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Solar Energy
journal homepage: www.elsevier.com/locate/solener

Analytical study of electrical performance of SiGe-based n+-p-p+ solar cells

with BaSi2 BSF structure
Khuram Ali *, Zohaib Ali
Nano-optoelectronics Research Laboratory, Department of Physics, University of Agriculture Faisalabad, 38040 Faisalabad, Pakistan

A R T I C L E I N F O A B S T R A C T

Keywords: This manuscript reports on an analytical study required to determine and enhance the effect of the high–low
SiGe junction based back surface field (BSF) of thin n-CdS/p-SiGe/p + -BaSi2 heterojunction solar cell. A 0.3 µm thick
Back surface field BSF layer made of extensively available and low-cost barium silicide (BaSi2) is introduced into the basic SiGe
BaSi2
solar cell for the first time. SCAPS-1D simulator is employed to analyze different parameters such as open circuit
Photovoltaic
SCAPS-1D
voltage (Voc), short-circuit current density (Jsc), fill factor (FF), quantum efficiency (QE) and conversion effi­
Solar cell ciency (η) of the device. The SiGe absorber layer thickness is varied from 2 to 50 µm to analyze the device
performance, however optimum results are observed between 10 and 15 µm. The BSF BaSi2 layer thickness
changing from 0.1 to 0.8 µm to check the viability of device for optimal efficiency. The present structure an­
ticipates an efficiency of 17.05% for BSF layer thickness of 0.8 µm. In addition, the use of SiGe earth abundant
material instead of CIGS having rare earth metals indium and gallium, reduces the overall fabrication cost of the
solar cell.

1. Introduction
Solar cells are needed for highly efficient and low-cost conversion of
sunlight into electrical energy. Presently, world is even now looking for
latest types of solar cells in addition to the first-generation silicon wafer
based and second generation thin-film solar cells. Crystalline silicon (c-
Si) based solar cells are used in the largest quantity of all type of solar
cells (Fahrenbruch and Bube, 2012; Masuko et al., 2014). Although,
classical Si-based solar cells are considered expensive, because of their
high processing temperature and increasing consumption of material.
Numerous highly efficient thin film-based semiconductor hetero struc­
tures have been reported in literature (Marouf et al., 2018; Chang et al.,
2011). Especially, the alloy of silicon–germanium (SiGe) was known as
promising material for photovoltaic (PV) applications, due to its high
absorption coefficient and compatibility as compared to the standard
fabrication process of Si. Hence, SiGe can be considered as an efficient
absorber layer. To fabricate an efficient silicon solar cell, many re­
searchers have been anticipating several semiconductor structures.
However, with the development of back surface field (BSF) structure the
characteristics of device have been observed considerably improved
than with conventional solar cells. It creates a pushing force which
bound the minority carriers at space-charge region due to heavily doped
back surface of solar cell, therefore, passivation the back surface reduces
the back recombination of device. As a result, the solar cell character­
istics are improved which lead to a better efficiency of solar cell (Yan
et al., 2017). On the back surface of an ordinary n+ p solar cell the for­
mation of a p+ layer resulted the BSF structure. From previous studies it
is documented that efficiency of the silicon solar cell is enhanced
directly by increasing Voc (Godlewski et al., 1990). In fact, semi­
conducting Barium Silicide (BaSi2) as BSF layer structure can be an
optimistic solution. Barium (Ba) is a soft alkaline earth metal in its
elemental form with atomic number 56 and having silvery-gray colour.
The orthorhombic BaSi2 is the most promising and suitable material for
PV applications due to its wide range of energy band gap (1.1–1.35 eV)
as well as its high stability at room temperature (van Doorene, 2017).
BaSi2 is measured as perfect absorber material for solar cells. The pur­
pose of cadmium sulfide (CdS) is to permit the energetic (short wave­
length) incoming photons to pass to the absorber with least absorption
loss. The energy band gap of CdS (2.4 eV) (Gaewdang et al., 2012)
promotes this purpose. There is no direct relation between Voc and
charge collection efficiency of BSF cell. In p-type base layer Voc of
n+ − p − p+ solar cell at high doping levels has minor dependence on the
impurity concentration. In addition, the heavy doping effects such as
Auger recombination, degeneracy and bandgap narrowing restrict the

* Corresponding author.
E-mail address: khuram_uaf@yahoo.com (K. Ali).

https://doi.org/10.1016/j.solener.2021.07.027
Received 16 February 2021; Received in revised form 7 July 2021; Accepted 9 July 2021
Available online 16 July 2021
0038-092X/© 2021 International Solar Energy Society. Published by Elsevier Ltd. All rights reserved.
K. Ali and Z. Ali Solar Energy 225 (2021) 91–96

Fig. 1. The schematic of proposed BSF solar cell.

demonstrated in Fig. 1a. The device structure consists of antireflection

Table 1
coating (ARC) layer of ZnO:Al, CdS(n), SiGe(p) and BaSi2(p+) as BSF
Values of different Parameter used for the simulation.
layer with back molybdenum (Mo) contact. SCAPS consists of three
Parameters (unit) ZnO CdS SiGe BaSi2 significant equations of semiconductors: Poisson’s equation, and the
Layer thickness w (nm) 50 50 10,000 300 continuity equations for free holes and free electrons. Nearly the entire
Eg (eV) 3.3 2.42 1.02 1.3 limitations can be graded in SCAPS such as electron affinity, bandgap,
χ (eV) 4.6 4.4 4.02 3.3 mobility, doping, thermal speed, and effective density of states, etc.
εr 9 10 13.6 11.17 Illumination spectrum AM 1.5G including AM0, AM1.5D are also
Nc (cm− 3 ) 2.2 × 2.2 × 2.2 × 1018 2.6 × available. Band alignment helps to determine the value of current
1018 1018 1019 passing through the heterojunction (Ahmmed et al., 2020). Fig. 1b
19
Nv (cm − 3 1.8 × 1.8 × 1.8 × 10 2 × 1019
illustrated the energy band diagram of the suggested BSF cell. Based on
)
1019 1019
Thermal velocity (electron 1 × 107 1 × 107 1 × 107 1 × 107 the data obtained from the SCAPS simulation for energy band gap
cm/s) Fig. 1b illustrating the layer thickness and bandgap of each material.
Thermal velocity (hole cm/s) 1 × 107 1 × 107 1 × 107 1 × 107 One can easily recognize the band bending between the SiGe and BaSi2
μn (cm2 /V⋅s) 100 100 1500 820
junction caused by the different doping concentrations used in this
μp (cm2 /V⋅s) 25 25 450 100
analysis. The parameters of different layers used for the simulations
Donor or Acceptor ND: 1019 ND: 1019 NA: 1 × NA: 5 × presented in the Table 1.
concentration (cm− 3 ) 1018 1018
Acceptor or Donor defect NAG: NAG: NDG: 1014 NDG: 1015
3. Computational formalism
density (cm− 3 ) 1015 1015

It is well established that the BSF structure reduces dark current so as

maximum efficiency of the solar cell (Salhi et al., 2010). A highly doped enhances Voc and short circuit current density (Jsc ). The efficiency of
region exists at the rear of the low doped base in the back surface solar solar cell is directly related to Jsc and Voc. There is an inverse relation
cell thus resulted a low high (LH) junction. The movement of minority between Voc and Jo .
charge carriers from low to high region of the junction is stopped by the kT
[
Jsc
]
low–high junction. At the junction edge this property is described by Voc = ln 1 + (1)
q Jo
leakage velocity which is known as effective recombination velocity Seff
at low injections anticipated by (Gunn, 1958). Seff has relation with the The conventional solar cell model contains the impact of Auger
doping levels of low and high regions as well as on different parameters recombination with bandgap narrowing at surfaces although the effect
like diffusion length and diffusivity of high region. Practically the sur­ of electric field due to doping concentration gradient is not considered
face recombination velocity at the rear contact is greater than Seff . (Hovel, 1980). The continuity equation for minority carries is
( ) [ ]
Although effective recombination velocitySeff deeply impact the Voc and 1 dJp (pn − pn0 )
− = 0 (for holes in n − region) (2)
efficiency of device (Seeger, 2013).In this work, we use CdS to act as the q dx τn
n-type buffer layer with p-type SiGe absorber and P+ BaSi2 BSF layer for
( ) [( )]
solar cell. We present new conditions for optimized design of ZnO:Al/ 1 dJn np − np0
− = 0(for electrons in p − region) (3)
CdS/SiGe/BaSi2 solar cell based on simulation and analytical investi­ q dx τn
gation of BSF layer. For simulations the Solar cell Capacitive Simulator
(Burgelman et al., 2016) has been used to analyze the effect of width and The current transport is assumed to be dominated over diffusion
other parameters on the current densities, Voc and efficiency of the solar process of minority carrier in solar cell. Current density for holes and
cell. electrons can be written as
( )
dnp
2. Device model and simulation Jn = qDn (4)
dx

The structure and schematics of the device under investigation is

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K. Ali and Z. Ali Solar Energy 225 (2021) 91–96

Fig. 2. Device performance as a function of SiGe absorber layer thickness.

( )
dpn Choudhury, 1984). Bandgap narrowing is effective np product and can
Jp = qDp (5)
dx be defined as an empirical variation to the density of states and occu­
pation statistics (Roulston et al., 1982). Consequently, the values
The model is consisted of the use of recombination velocity which is
modified for Fermi statistics can be used in Boltzmann equation which is
the measurement of minority carrier losses at different device regions. ( )
This is directly related to the saturation current of junction as well as the ΔVG+ − ΔVG− 2
np = n2ie = exp ni (8)
characteristics of dark voltage-current which controls the performance VT
of device (Wolf, 1980). The general expression for J0 which is algebraic
sum of Job and Joe . The model of device we consider here is for ho­ where ΔVG− and ΔVG+ are the effective bandgap narrowing in the low and
mogenous doping Joe and Job represents the emitter and base role the high sides respectively. Therefore
saturation current (Yan et al., 2017). [( )3/4 ]− 2/3 ( )
⎡ ( ) ( )⎤ 1020 EG
ΔVG = 0.231 +1 n2i = Nc Nv exp −
Sn cosh WLnB + DLnn sinh WLnB N VT
2
qn Dn ⎢ ⎥
Job = i ⋅ ⎢ ( ) ( )⎥ (6a)
NA Ln ⎣Dn ⎦ ⎡ ( ) ⎤
Ln
cosh WLnB + Sn sinh WLnB Sn Ln+ Wp+
( )⎢ Dn + + tanh L+ ⎥
NA D+ ΔV +
− ΔV −
G ⎢
( )⎥
n

( ) ( )⎤ Seff = + +n exp G
⎢ ⎥ (9)
⎡ NA L n VT ⎣ + W + ⎦
Sp cosh +
Dp WE
sinh WB 1 + SDn L+n tanh L+p
n n
qn2i Dp ⎢ Lp Lp Ln ⎥
Joe = ⋅ ⎢ ( ) ( )⎥ (6b)
ND Lp ⎣Dp ⎦
The parameter D+
is diffusivityL+
n , Wp represents diffusion length
+
Lp
cosh WLpE + Sp sinh WLpE n
and thickness of P region respectively. N+
+
A is the effective doping con­
NA , ND are the impurity concentrations of base and emitter region, centration of the P region. The diffusivity D was found from the data as
+

WE , WB are the emitter and base widths outside the junction edges, presented by (Brotherton, 2013).
respectively. here Dn , Dp are the diffusivity in the p-base region and n- Do
emitter region, respectively. Surface recombination velocity at rear of p- D= ( )0.6 + Ao (10)
base region is Sn and at front of emitter region is Sp . Low-high junction or 1+ N
1017
back-surface field can minimize the recombination at the back surface
(Godlewski et al., 1990) but in case of front surface the growth of an where for p-type Do = Dno = 35, Ao = 1.8 as well as for n-type Do =
oxide layer can reduce the recombination (Fossum and Burgess, 1978). Dpo = 12.5, Ao = 1. By using the data (Beck and Conradt, 1973) for
The physical mechanism causes the working of BSF cell is through
Auger recombination τA and lifetime function τK one can obtain the
introduction of Seff (effective surface recombination velocity). Now we
expression for diffusion length.
consider n-p-p BSF structure. The structure and dimensions of the device √̅̅̅̅̅̅
considered is shown below. L = Dτ (11)
At the low region of low–high junction, interface recombination of
( )−
minority carriers becomes effective recombination velocity. Further 1 1
1
τ= +
discussion leads to the expression which exhibits the transformation of τA τK
surface recombination velocity (Sn ) to the effective recombination ve­
locity. where τK = 1+ τo N 1
and τA =
, for p-type KA = 1.2 while for n-
(KA .10− 21 )N2
7×1015
⎡ ( ) ⎤
Sn L+ Wp+ type KA = 2.8. The value of τo is between 200 and 400μ s is more
+ tanh suitable.
n
n+ +⎢ D+ L+⎥
p Dn ⎢
( )⎥
n n
Seff = +
⎢ ⎥ (7)
np Ln ⎣ + W + ⎦
1 + SDn L+n tanh L+p
n n 4. Results and discussion

However, the total Jo essentially include the component Joe for n

The SiGe based BSF solar cell with CdS buffer layer and BaSi2 BSF
base. To introduce the effect of bandgap narrowing and degeneracy,
layer under 1.5 standard conditions were simulated. We change the
some useful modifications was made in Eq. (8) by (Rohatgi and Rai-
absorber and BSF layers thickness and accepter densities to analyze the

93
K. Ali and Z. Ali Solar Energy 225 (2021) 91–96

Table 2 higher values of SiGe thickness. The reason of this behavior is mainly
Device performance as function of SiGe absorber layer thickness. attributed to improved incident light absorption due to the increase in
Thickness SiGe (μm) Voc (V) Jsc (mA/cm2) FF (%) η (%) absorption layer thickness (Sawicka-Chudy et al., 2019). The absorber
layer can absorb large number of incident photons as the layer thickness
2.0 0.6341 28.1212 81.6726 14.5643
increases which leads to the rise in photo generated current. One can
5.0 0.6156 30.1919 81.3711 15.1247
10.0 0.5995 32.0183 81.1442 15.5749 notice from the figure that Jsc and η almost saturates for further increase
20.0 0.5776 33.8807 81.5698 15.9629 in the SiGe layer thickness. The probability of Shockley-Read-Hall (SRH)
50.0 0.5554 36.0957 81.2033 16.2798 recombination was increased due to increase in SiGe layer thickness
which is responsible for the saturation of η and Jsc. However, the thicker
absorber layer will increase the fabrication cost of the solar cell due to
cell performance while the other parameters remain unchanged. Based
increase in material cost which is also a disadvantage of wider absorber
on our proposed structure Jsc can be achieved up to 33.8 mA/cm2
layer (Sawicka-Chudy et al., 2019). Therefore, we set the layer thickness
leading to 15.96% efficiency.
to optimized value of 10 µm for this work. 10 µm SiGe layer thickness
allows to give the η of about 15.57% and Voc of 0.599 V.
4.1. Effect of doping and thickness of absorber (SiGe) layer Fig. 3. illustrates variation pattern of η and Jsc of ZnO/CdS/SiGe/
BaSi2 solar cell for different NA (acceptor concentrations) of p-SiGe
The effect of variation in SiGe absorber layer thickness on the cell absorber layer. Lower values (less than 1014) and higher values (more
performance is illustrated in Fig. 2 and Table 2. The ZnO, CdS and BSF than 1019) of NA have a notable effect on the electronic properties of
layers thickness were kept as constant of 0.05 µm, 0.05 µm and 0.3 µm, SiGe. For NA = 1010/cm3–1014/cm3, the η was achieved constantly of
respectively. Excess charge carriers are produced due to the absorption about 13.4% and increased to 17.5% when NA reaches to 1018/cm3. Rise
of incident photons in the absorber layer which is the most significant in doping concentration leads to an increase in the generation of carrier
component of solar cell. We investigate the influence of SiGe layer concentration which increases the efficiency (Kuddus et al., 2021).
thickness on the proposed thin film heterostructure solar cell parameters However. Jsc remains at 32.0 A/cm3 and shows a minor decrease from
by changing the width of SiGe layer from 2 to 50 µm. The device pa­ 32.0 A/cm3 at NA = 1017/cm3 to 31.8 A/cm3 at concentration of NA =
rameters (Voc, Jsc, FF, η) were simulated and depicted in Fig. 2(a) and 1018/cm3. At the end, both η and Jsc rapidly decrease when NA exceeded
(b). Results revealed that the η and Jsc increase rapidly with the increase from 1019/cm3. In the light of simulation results the recommended
in SiGe layer thickness up to ~15 µm and show very less variation for

Fig. 3. Device performance as a function of acceptor density of SiGe layer.

Fig. 4. Device performance as the function of BaSi2 BSF layer thickness.

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K. Ali and Z. Ali Solar Energy 225 (2021) 91–96

Table 3 SiGe interface which act as potential barrier for flow of electrons to back
Device performance as function of BaSi2 BSF layer thickness. surface. The reflection of electrons leads to the decrease in the dark
Thickness BaSi2 (μm) Voc (V) Jsc (mA/cm2) FF (%) η (%) current as well as an increase in the short circuit current. The 0.8 µm
width of BSF layers allows the Jsc of ~34.89 A/cm3 with the conversion
0.1 0.5973 30.5218 81.3336 14.8287
efficiency of about 17.0%.
0.2 0.5995 32.0183 81.1442 15.5749
0.4 0.6014 33.7016 81.1024 16.4373 Fig. 5 illustrates variation pattern of η and Jsc of ZnO/CdS/SiGe/
0.6 0.6023 34.4890 81.0941 16.8458 BaSi2 solar cell for different NA (acceptor concentrations) of BSF layer.
0.8 0.6029 34.8903 81.0837 17.0557 For NA = 1010/cm3 to 1012/cm3, the η increased promptly from 1.5% to
15.0%, moreover, for higher values of NA efficiency nearly saturates at
~15%. Similar evolution pattern can be seen in case of Jsc which in­
doping concentration of p-SiGe layer should be more than that of 1014
crease initially then remains at ~32.0 A/cm3 and shows a minor
which is its defect density and smaller than 1019 which is the Nv
decrease from 32.0 A/cm3 at NA = 1016/cm3 to 31.89 A/cm3 at con­
(effective density of states ~1019/cm3).
centration of NA = 1019/cm3.

4.2. Effect of doping and thickness of BSF (BaSi2) layer

At the rear side of the solar cell, a large doping concentration can
stop the minority carriers’ recombination at metallic back contact. For
this purpose, a BSF layer is introduces with greater doping concentration
than that of absorber layer. In this work, a thin BaSi2 layer is combined
with SiGe to act as BSF layer. The effect of variation in BaSi2 BSF layer
thickness on the cell performance is illustrated in Fig. 4 and Table 3. The
CdS and SiGe thickness is 0.05 μm and 10 μm respectively while BaSi2
layer thickness varies from 0.1 μm to 0.8 μm. One can notice that as the
BaSi2 thickness increase the Jsc increases monotonically. An electric field
is generated due to the formation of p-n junction at the p+ BaSi2 and p
4.3. Effect of operating temperature
The stability of solar cell is directly related to the operating tem­
perature, as it is previously reported in literature that Voc depends on
operating temperature. In Fig. 6 the temperature varies from 300 to 600
K to check the performance of defected ZnO/CdS/SiGe/BaSi2 BSF solar
cell. As shown in Fig. 6 the Voc decreases with the increase in operating
temperature. It is due to decrease in material bandgap with increase of
operating temperature which also results the increase in leakage cur­
rent. The Jsc is not changed significantly, however, Voc decrease
continuously from 0.60 to 0.05 V. The FF and η also show the similar

Fig. 5. Device performance as the function of acceptor density of BaSi2 BSF layer.

Fig. 6. Cell performance (Voc, Jsc, FF and η) as function of operating temperature.

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K. Ali and Z. Ali
Fig. 7. Current density as function of voltage (J-V) and Quantum efficiency as the function of wavelength of proposed BSF structure solar cell.
pattern of decrement from 84 to 33% and 15.9% to 1.02% respectively.
Fig. 7 Illustrates the J-V analysis and quantum efficiency (QE) of
proposed BSF solar cell structures. For all thickness values of BSF layer
the maximum QE is achieved at ~400 to 650 nm. It also explains that the
present solar cell structure exhibits short wavelength response that is
improved than those of the conventional solar cells. This enhancement
in low wavelength is ascribed to a major reason, which relates to the
presence of the Ge concentration which enhances the absorption in the
SiGe layer (Zouari and Ben Arab, 2011). Subsequently, the minority
carriers’ density in absorber layer region increases as compared to the
hole’s density generated in the buffer layer.
5. Conclusion
The motive of this study is to report a novel design based on an
analytical model required to determine and enhance the effect of the
high–low junction base back surface field (BSF) of thin n-CdS/p-SiGe/
p+-BaSi2 heterojunction solar cell. Therefore, a 0.3 µm thick BSF layer
made of extensively available and low-cost barium silicide (BaSi2) is
introduced into the basic SiGe solar cell for the first time. SCAPS-1D is
used to analyze different parameters such as the Jsc, Voc, fill factor,
conversion, and quantum efficiencies of the devices. The SiGe absorber
layers thickness is varied from 2 to 50 µm to analyze the device per­
formance, however optimum results are observed between 10 and 15
µm. The BSF BaSi2 layer thickness changing from 0.1 to 0.8 µm to check
the viability of device for optimal efficiency. The present structure an­
ticipates an efficiency of 17.05% for BSF layer thickness 0.8 µm. In
addition, the use of SiGe earth abundant material instead of CIGS having
rare earth metals indium and gallium, reduces the overall material cost.
In future we will investigate the influence of graded bandgap of absorber
layer of proposed structure on the performance of device.
Declaration of Competing Interest
The authors declare that they have no known competing financial
interests or personal relationships that could have appeared to influence
the work reported in this paper.
Acknowledgement
This work was supported by the Higher Education Commission
(HEC) of Pakistan [Grant No: 8615/Punjab/NRPU/R&D/HEC/2017] to
Dr. Khuram Ali. The authors would like to acknowledge Dr. Marc Bur­
gelman, University of Gent, Belgium for providing the SCAPS simulator.
96
Solar Energy 225 (2021) 91–96
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