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HVDA551-Q1, HVDA553-Q1
SLLSEC4B – JUNE 2013 – REVISED AUGUST 2016
1 Features
• Qualified for Automotive Applications – RXD Wake-Up Request Lockout on CAN Bus
• AEC-Q100 Qualified With the Following Results: Stuck Dominant Fault (HVDA551)
– Device Temperature Grade 1: –40°C to – Digital Inputs Compatible With 5-V
+125°C Ambient Operating Temperature Microprocessors (HVDA553)
– Device HBM ESD Classification Level: – Thermal Shutdown Protection
– Level 3B for Pins 6 and 7 – Power-Up and Power-Down Glitch-Free Bus
– Level 3A for All Other Pins I/O
– Device CDM ESD Classification Level C6 – High Bus Input Impedance When Unpowered
(No Bus Load)
• Meets or Exceeds the Requirements of
ISO 11898-2 and ISO 11898-5
2 Applications
• GIFT/ICT Compliant
• SAE J2284 High-Speed CAN for Automotive
• Data Rate Up to 1 Mbps Applications
• ESD Protection Up to ±12 kV (Human-Body • SAE J1939 Standard Data Bus Interface
Model) on Bus Pins
• GMW3122 Dual-Wire CAN Physical Layers
• I/O Voltage Level Adapting
• ISO 11783 Standard Data Bus Interface
– HVDA551: Adaptable I/O Voltage Range (VIO)
• NMEA 2000 Standard Data Bus Interface
From 3 V to 5.33 V
• SPLIT Voltage Source 3 Description
– HVDA553: Common-Mode Bus Stabilization The HVDA55x-Q1 device is designed and qualified
• Operating Modes: for use in automotive applications and meets or
– Normal Mode exceeds the specifications of the ISO 11898 High
Speed CAN (Controller Area Network) Physical Layer
– Low-Power Standby Mode With RXD Wake-Up standard (transceiver).
Request
• High Electromagnetic Compliance (EMC) Device Information(1)
• Supports CAN Flexible Data-Rate (FD) PART NUMBER PACKAGE BODY SIZE (NOM)
• Protection HVDA551-Q1
SOIC (8) 4.90 mm × 3.91 mm
HVDA553-Q1
– Undervoltage Protection on VIO and VCC
(1) For all available packages, see the orderable addendum at
– Bus-Fault Protection of –27 V to 40 V the end of the data sheet.
– TXD Dominant State Time-Out
HVDA551 Block Diagram HVDA553 Block Diagram
VIO VCC SPLIT VCC
5 3 5 3
VCC / 2
VCC VCC
7 7
1 CANH 1 CANH
DOMINANT DOMINANT DRIVER
TXD DRIVER TXD
TIME-OUT TIME-OUT
6 6
CANL CANL
VIO VCC
8 8
STB MODE SELECT STB MODE SELECT
UNDER UNDER
VOLTAGE VOLTAGE
4 4
MUX
MUX
2 2
GND GND
Copyright © 2016, Texas Instruments Incorporated Copyright © 2016, Texas Instruments Incorporated
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
HVDA551-Q1, HVDA553-Q1
SLLSEC4B – JUNE 2013 – REVISED AUGUST 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 8.4 Device Functional Modes........................................ 19
2 Applications ........................................................... 1 9 Application and Implementation ........................ 22
3 Description ............................................................. 1 9.1 Application Information............................................ 22
4 Revision History..................................................... 2 9.2 Typical Applications ................................................ 22
5 Pin Configuration and Functions ......................... 3 10 Power Supply Recommendations ..................... 25
6 Specifications......................................................... 4 11 Layout................................................................... 25
6.1 Absolute Maximum Ratings ...................................... 4 11.1 Layout Guidelines ................................................. 25
6.2 ESD Ratings.............................................................. 4 11.2 Layout Example .................................................... 26
6.3 Recommended Operating Conditions....................... 5 12 Device and Documentation Support ................. 27
6.4 Thermal Information .................................................. 5 12.1 Documentation Support ........................................ 27
6.5 Electrical Characteristics........................................... 5 12.2 Related Links ........................................................ 27
6.6 Switching Characteristics .......................................... 8 12.3 Receiving Notification of Documentation Updates 27
6.7 Typical Characteristic................................................ 9 12.4 Community Resource............................................ 27
7 Parameter Measurement Information ................ 10 12.5 Trademarks ........................................................... 27
12.6 Electrostatic Discharge Caution ............................ 27
8 Detailed Description ............................................ 15
12.7 Glossary ................................................................ 27
8.1 Overview ................................................................. 15
8.2 Functional Block Diagrams ..................................... 15 13 Mechanical, Packaging, and Orderable
8.3 Feature Description................................................. 16
Information ........................................................... 27
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation
section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and
Mechanical, Packaging, and Orderable Information section ................................................................................................. 1
• Removed Ordering Information table, see POA at the end of the data sheet........................................................................ 1
HVDA551 D Package
8-Pin SOIC HVDA553 D Package
Top View 8-Pin SOIC
Top View
TXD 1 8 STB
TXD 1 8 STB
GND 2 7 CANH
GND 2 7 CANH
VCC 3 6 CANL
VCC 3 6 CANL
RXD 4 5 VIO
RXD 4 5 SPLIT
Not to scale
Not to scale
Pin Functions
PIN
TYPE (1) DESCRIPTION
NO. NAME
1 TXD I CAN transmit data input (low for dominant bus state, high for recessive bus state)
2 GND G Ground connection
3 VCC P Transceiver 5-V supply voltage
4 RXD O CAN receive data output (low in dominant bus state, high in recessive bus state)
VIO (HVDA551) P/O Transceiver logic level (IO) supply voltage
5 SPLIT
P/O Common-mode stabilization output
(HVDA553)
6 CANL I/O Low level CAN bus line
7 CANH I/O High level CAN bus line
8 STB I Standby mode select pin (active high)
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1) (2)
MIN MAX UNIT
VCC Supply voltage –0.3 6 V
VIO I/O supply voltage –0.3 6 V
Voltage at bus terminals (CANH, CANL) –27 40 V
IO Receiver output current (RXD) 20 mA
HVDA55x –0.3 6 and VI ≤ VIO + 0.3
VI Voltage input (TXD, STB, S) V
HVDA553 –0.3 6
TJ Operating virtual-junction temperature –40 150 °C
Tstg Storage temperature 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values, except differential I/O bus voltages, are with respect to the ground terminal.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
(1) All typical values are at 25°C and supply voltages of VCC = 5 V and VIO = 3.3 V.
(2) The VCC supply is not required during standby mode so in the application ICC in standby mode may be zero. If the VCC supply remains,
then ICC is per specification with VCC.
(3) See IIO Quiescent Current in Standby / Silent Mode.
Copyright © 2013–2016, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: HVDA551-Q1 HVDA553-Q1
HVDA551-Q1, HVDA553-Q1
SLLSEC4B – JUNE 2013 – REVISED AUGUST 2016 www.ti.com
(1) All typical values are at 25°C and supply voltages of VCC = 5 V and VIO = 3.3 V.
(2) The TXD dominant time out (t(DOM)) disables the driver of the transceiver once the TXD has been dominant longer than t(DOM), which
releases the bus lines to recessive, preventing a local failure from locking the bus dominant. The driver may only transmit dominant
again after TXD has been returned HIGH (recessive). While this protects the bus from local faults, locking the bus dominant, it limits the
minimum data rate possible. The CAN protocol allows a maximum of eleven successive dominant bits (on TXD) for the worst case,
where five successive dominant bits are followed immediately by an error frame. This, along with the t(DOM) minimum, limits the
minimum bit rate. The minimum bit rate may be calculated by: Minimum Bit Rate = 11 / t(DOM) = 11 bits / 300 µs = 37 kbps
3.00E+00
2.50E+00
2.00E+00
Vod
1.50E+00
1.00E+00
5.00E-01
0.00E+00
4.4 4.6 4.8 5.0 5.2 5.4 5.6
VCC C002
A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 125 kHz, 50% duty cycle,
tr ≤ 6 ns, tf ≤ 6 ns, ZO = 50 Ω.
B. CL includes instrumentation and fixture capacitance within ±20%.
C. For HVDA553 device versions, VIO = VCC.
A. The input pulse is supplied by a generator having the following characteristics: PRR ≤ 125 kHz, 50% duty cycle,
tr ≤ 6 ns, tf ≤ 6 ns, ZO = 50 Ω.
B. CL includes instrumentation and fixture capacitance within ±20%.
C. For HVDA553 device versions VIO = VCC.
A. All VI input pulses are from 0 V to VIO and supplied by a generator having the following characteristics: tr or tf ≤ 6 ns.
Pulse repetition rate (PRR) = 125 kHz, 50% duty cycle.
A. All VI input pulses are from 0 V to VIO and supplied by a generator having the following characteristics: tr and
tf ≤ 6 ns, pulse repetition rate (PRR) = 250 kHz, 50% duty cycle.
8 Detailed Description
8.1 Overview
The device meets or exceeds the specifications of the ISO 11898 High-Speed CAN (Controller Area Network)
Physical Layer standard (transceiver). This device provides CAN transceiver functions: differential transmit
capability to the bus and differential receive capability at data rates up to 1 megabit per second (Mbps). The
device includes many protection features providing device and CAN network robustness.
VIO VCC
5 3
VCC
7
1 CANH
DOMINANT
TXD DRIVER
TIME-OUT
6
CANL
VIO
8
STB MODE SELECT
UNDER
VOLTAGE
4
MUX
WAKE UP LOGIC /
MONITOR
GND
Copyright © 2016, Texas Instruments Incorporated
SPLIT VCC
5 3
VCC / 2
VCC
7
1 CANH
DOMINANT DRIVER
TXD
TIME-OUT
6
CANL
VCC
8
STB MODE SELECT
UNDER
VOLTAGE
MUX
RXD LOGIC OUTPUT
WAKE UP LOGIC /
MONITOR
GND
Copyright © 2016, Texas Instruments Incorporated
NOTE
The maximum dominant TXD time allowed by the TXD dominant-state time-out limits the
minimum possible data rate of the devices.
The CAN protocol allows a maximum of eleven successive dominant bits (on TXD) for the worst case, where five
successive dominant bits are followed immediately by an error frame. This, along with the t(DOM) minimum, limits
the minimum bit rate. The minimum bit rate may be calculated by Equation 1:
Minimum Bit Rate = 11 / t(DOM) (1)
NOTE
Once an undervoltage condition is cleared and VCC and VIO have returned to valid levels,
the device typically requires 300 µs to transition to normal operation.
NOTE
The short-circuit current of the bus depends on the ratio of recessive to dominant bits and
their respective short-circuit currents.
(1) Mirrors bus state: LOW if CAN bus is dominant, HIGH if CAN bus is recessive.
(2) See Figure 18 and Figure 19 for operation of the low-power wake-up receiver and bus monitor for RXD wake-up request behavior and
Table 5 for the wake-up receiver threshold levels.
CANH
Vdiff
Vdiff
CANL
CANH
VCC/2 A
RXD
B
CANL
A: Normal Mode
B: Low Power Standby Mode
8.4.3.1 RXD Wake-Up Request Lockout for Bus-Stuck Dominant Fault (HVDA551)
If the bus has a fault condition where it is stuck dominant while the HVDA551 is placed into standby mode
through the STB pin, the device locks out the RXD wake-up request until the fault has been removed to prevent
false wake-up signals in the system.
Bus VDiff
RXD
Figure 18. HVDA551 RXD Wake-Up Request With No Bus Fault Condition
Bus VDiff
tBUS tBUS tBUS tBUS
tClear <tBUS
<tClear
RXD
Figure 19. HVDA551 RXD Wake-Up Request Lockout During Bus Dominant Fault Condition
(1) H = high level, L = low level, X = irrelevant, Y = common-mode bias to GND, Z = common-mode bias
to VCC / 2. See Figure 16 and Figure 17 for common-mode bias information.
(2) HVDA551 and HVDA553 have internal pullup to VIO on the STB pin. If the STB pin is open, the pin is
pulled high and the device is in standby mode.
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
VIN
VOUT
3.3 V
Voltage V10
Regulator
(e.g. TPSxxxx) STB CANH
VCORE 5
V10 Port x 8 7
VCORE
MCU HVDA551
(e.g. TMS 470) RXD CAN Transceiver
RXD 4
VIN EN Port y TXD CANL
TXD 1 6
5V 3 2
Voltage
Regulator VCC GND
(e.g. TPSxxxx)
VOUT
Figure 20. Typical Application Using the HVDA551 With 3.3-V I/O Voltage Level in Low-Power Mode
Node n
Node 1 Node 2 Node 3 (with termination)
MCU or DSP
MCU or DSP MCU or DSP MCU or DSP
CAN
CAN CAN CAN Controller
Controller Controller Controller
SN65HVD257 CAN
SN65HVD251 CAN SN65HVD1050 CAN SN65HVD233 CAN Transceiver
Transceiver Transceiver Transceiver
RTERM
RTERM
CANH CANH
RTERM/2
CAN CAN
RTERM
Transceiver Transceiver
CSPLIT
RTERM/2
CANL CANL
The family of transceivers have variants for both 5-V-only applications, and applications where level shifting is
needed for a 3.3-V micrcontroller.
VBATTERY
VSUP VCC
VCC
5-V Voltage
Regulator CANH
(e.g. TPSxxxx) VCC 3
STB 7
Port x 8
HVDA553
Generic 5 V SPLIT
CAN 5
MCU
RXD Transceiver
RXD 4
TXD CANL
TXD 1 2 6
GND
Figure 23. Typical Application Using the HVDA553 With SPLIT Termination Diagram
Figure 25. TXD, CANH, CANL, and RXD Waveforms Figure 26. TXD, CANH, CANL, and RXD Waveforms
1 Mbps 500 Kbps
11 Layout
NOTE
High-frequency currents follows the path of least impedance and not the path of least
resistance.
• Use at least two vias for supply (VCC) and ground connections of bypass capacitors and protection devices to
minimize trace and via inductance.
• Bypass and bulk capacitors must be placed as close as possible to the supply terminals of transceiver,
examples are C1 and C2 on the VCC supply and C6 and C7 on the VIO supply.
• Bus termination: this layout example shows split termination. This is where the termination is split into two
resistors, R6 and R7, with the center or split tap of the termination connected to ground through capacitor C3.
Split termination provides common-mode filtering for the bus. When bus termination is placed on the board
instead of directly on the bus, take additional care to ensure the terminating node is not removed from the bus
thus also removing the termination.
• To limit current of digital lines, serial resistors may be used. Examples are R2, R3, and R4. These are not
required.
• Terminal 1: R1 is shown optionally for the TXD input of the device. If an open-drain host processor is used,
this is mandatory to ensure the bit timing into the device is met.
• Terminal 5: For devices with a VIO input, bypass capacitors must be placed as close to the pin as possible
(example C6 and C7). In devices without a VIO input, this pin is not internally connected and can be left
floating or tied to any existing net (for example, a split pin connection).
• Terminal 8 is shown assuming the mode terminal, STB, will be used. If the device is only used in normal
mode, R4 is not needed and R5 could be used for the pulldown resistor to GND.
R4
VCC or VIO R1 GND
R5
TXD R2 1 8
GND
C4
GND 2 7 R6
U1
D1
J1
C1 U1 C3
VCC C2 3 6 R7
C5
GND
RXD R3 4 5 VIO
C7
C6
GND
12.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
HVDA551QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 H551Q
HVDA553QDRQ1 ACTIVE SOIC D 8 2500 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 H553Q
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Oct-2020
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Oct-2020
Pack Materials-Page 2
PACKAGE OUTLINE
D0008A SCALE 2.800
SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
SEATING PLANE
.228-.244 TYP
[5.80-6.19]
.004 [0.1] C
A PIN 1 ID AREA
6X .050
[1.27]
8
1
.189-.197 2X
[4.81-5.00] .150
NOTE 3 [3.81]
4X (0 -15 )
4
5
8X .012-.020
B .150-.157 [0.31-0.51]
.069 MAX
[3.81-3.98] .010 [0.25] C A B [1.75]
NOTE 4
.005-.010 TYP
[0.13-0.25]
4X (0 -15 )
SEE DETAIL A
.010
[0.25]
.004-.010
0 -8 [0.11-0.25]
.016-.050
[0.41-1.27] DETAIL A
(.041) TYPICAL
[1.04]
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
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EXAMPLE BOARD LAYOUT
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55]
SYMM SEE
DETAILS
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
[0.05]
5
4
6X (.050 )
[1.27]
(.213)
[5.4]
EXPOSED
METAL EXPOSED
METAL
.0028 MAX .0028 MIN
[0.07] [0.07]
ALL AROUND ALL AROUND
4214825/C 02/2019
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
D0008A SOIC - 1.75 mm max height
SMALL OUTLINE INTEGRATED CIRCUIT
8X (.061 )
[1.55] SYMM
1
8
8X (.024)
[0.6] SYMM
(R.002 ) TYP
5 [0.05]
4
6X (.050 )
[1.27]
(.213)
[5.4]
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
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