- To draw the I-V characteristic curve of a p-n junction in forward bias and Teverse ‘TUS Ap-n junction (semi-conductor) diode, a 3 volt battery, a 50 volt battery, a high resi tat, one 0-3 volt voltmeter, one 0-50 volt voltmeter, one 0-100 mA ammeter, one }\sA ammeter, one way key, connecting wires and pieces of sand paper. _ Forward bias characteristics. When the p -section of the diode is connected to positive ofa battery and n-section is connected to negative terminal of the battery then junction to be forward biased. With increase in bias voltage, the forward current increases slowly > beginning and then rapidly. At about 0.7 V for Si diode (0.2 V for Ge), the current increases y. The value of forward bias voltage, at which the forward current increases rapidly, is in voltage or threshold voltage. e bias characteristics. When the p-section of the diode is connected to negative gh voltage battery and n-section of the diode is connected to positive terminal of then junction is said to be reverse biased. bias voltage increases, initially there is a very small reverse current flow, constant with bias. But when reverse bias voltage increases to suffici current suddenly increases to a large value. This voltage at which diode occurs (suddenly large current flow) is called zener breakdown e. The breakdown voltage may starts from one volt to several hundred dopant density and the depletion layer.ODES AND TRANSISTORS 185 spniconove TOR DI oie. The readings are as a sample, For reverse-bias Range of voltmeter count of voltmeter Le Zero error of voltmeter Range of micro-ammeter Least count of micro-ammeter = Zero error of micro-ammeter a ‘Table for reverse-bias voltage and reverse current 1 ri : i 5.0 ; : 10 A i 9.0 ‘ e 11.0 i i 13.0 a 15.0 : : 17.0 . 4 19.0 a Ea 21.0 a a 5 23.0 ee % 25.0 on Note. The readings are given as a sample. ‘ULATIONS For forward-bias ; Plot a graph between forward-bias voltage V; (column 2) and forward nt Tp lumn 3) taking V, along X-axis and I, along Y-axis. eeCOMPREHENSIVE PRACTICAL PHYSICS ‘This graph is called forward-bias characteristic curve a junction diode. Be FORWARD-BIAS CHARACTERISTIC CURVE OF A JUNCTION DIODE I a Scale : , 1 ‘ya X-axis : 1.0m = 0.2 Vof Ve hs Y-axis : 1 om=5 mA of Ir Sap ; Characteristic curve of a junction diode (forward-bias). 4 as i change from point A to B oh 2.0.= 0.4 V, A Ip = 30-20 = 10 mA for forward-bias, uate! wail heigverscik os = '{oucTOR DIODES AND TRANSISTORS sis graph is called reverse-bias characteristic curve of a junetion diode. REVERSE-BIAS CHARACTERISTIC CURVE OF A JUNCTION DIODE Scale: X-axis : 1 om = 5.0 V of Va Y-axis : 1.0m = 5 WA of Ip +— Reverse-bias voltage, (Vp) in V kK 2 2 18 1075 |0 3 <— unt u (p auouno geiq-asionoys (23, 18) a 3 8 ( 25, 25) ese Fig. Characteristic curve of a junction diode (reverse-bias). from graph, for change from point A to B AV, =7.0-5.0=2V, Alp=2-1=1pA Hence junction resistance for reverse-bias, AV, _ 2V Total ke a aoa RESULT Junction resistance for forward-bias = 40 ohms Junction resistance for reverse-bias = 2 x 10° ohms. PRECAUTIONS 1, All connections should be neat, clean and tight. 2, Key should be used in circuit and opened when the circuit is not being used. 3, Forward-bias voltage beyond breakdown should not be applied. 4, Reverse-bias voltage beyond breakdown should not be applied. SOURCES OF ERROR ‘The junction diode supplied may be faulty. re a nada an MRE MOORE cacNRNNR Ser gorammmcoatat