^£.mL-(2onau.ctoi ^Products,, One.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

PN2222

General Purpose Transistor

, TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO
Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
'c Collector Current 600 mA
PC Collector Power Dissipation 625 mW
Tj Junction Temperature 150 °C
TSTG Storage Temperature -55-150 °C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol Parameter Test Condition Win. Max. Units
BVCB0 Collector-Base Breakdown Voltage lc=10uA, IE=0 60 V
BVcEO Collector Emitter Breakdown Voltage lc=10mA, IB=0 30 V
BVEBO Emitter-Base Breakdown Voltage !E=10nA, lc=0 5 V
'CBO Collector Cut-off Current VCB=50V, IE=0 0.01 uA
'EBO Emitter Cut-off Current VEB=3V, lc=0 10 nA
HFE DC Current Gain VCE=10V, lc=0.1mA 35
VCE=10V, *lc=150mA 100 300
VCE (sat) * Collector-Emitter Saturation Voltage lc=500mA, !B=50mA 1 V
VBE (sat) * Base-Emitter Saturation Voltage lc=500mA, !B=50mA 2 V
•r Current Gain Bandwidth Product VCE=20V, lc=20mA,f=100MHz 300 MHz
C0b Output Capacitance VCB=10V, IE=0, f=1MHz 8 pF
• Pulse Test: Pulse Width<300ns, Duty Cycle<2%

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to.be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
 TO-92

4.58

0.46 ±0.10

1.27TYP 1.27TYP n „,, +0.10

°-38-0.05
[1.27 ±0.20] [1.27 ±0.20]

3.60 ±0.20