SEMIKRON Vas |eams (maximum values for continuous operation) Vem 700A lav (sin. 180; Teaso = 100 °C) 420A 400 v & ¥ a 200 SKN 320/02 SKR 320/02 - 400 SKN 320/04 SKR 320/04 - 800 SKN 320/08 SKR 320/08 - 1200 SKN 320/12 SKR 320112 - 1400 SKN 320/14 SKR 320/14 1600 SKN 320/16 SKR 320116 - 1800 - - SKN 400/18 2400 - - SKN 400/26 2700 - - SKN 400/27 3000 - . SKN 400/30 ‘Symbol] Conditions ‘SKN 320 ‘SKN 400 ‘SKR 320 leay | sin, 180; Tease = 87°C - 450A 420A 400A 320A = esau [T= 25°C; 10ms 9.0004 90008 Timex, 10.ms 8000A 7.500 A it Ty= 25°C; 83... 400 000 AZs 400 000 A?s Tima 18,3... 300 000 A?s_| 280.000 A’s Or typ. 300 wc typ. 400 nC In 3ma 3mA 100 mA 60 mA Ve ° (l=. ); max. 1,35 V (1000 A) | 1,45 v (1200 A) Vino | Tw max, osv 09Vv Ts ma 0,45 ma 0,5 ma Pine 0,16 CW 0.11 °C Ranch 0,015 “CW 0,01 °C Tw = 40... + 180°C | 40... + 160°C Tog - 55... + 180°C | —55.... + 160°C M | Stunits/US units 60 Nev/530 Ib. in. a 59,81 mis® w approx. 5009 RC [PR=2W 1 pF +200 Ro _|Pa=20W 25 KO Case E16 EW © by SEMIKRON MM 813bb71 0006323 934 Rectifier Diodes SKN 320 SKR 320 SKN 400 Ol Features ‘+ Reverse voltages up to 3000 V * Hermetic metal cases with glass insulators; SKN 400 ceramic insulator with extra, long creepage distances. + Threaded studs ISO M24 x 1,5, + SKN: anode to stud SKR: cathode to stud Typical Applications * SKNV/SKR 320: all-purpose high power rectifier diodes + SKN 400: high voltage rectifier diode, especially for traction applications ‘= Cooling via heatsinks + Non-controllable and hait-controllable rectifiers, free-wheeling diodes Be-25<8 Rincos 01 3s SCIW Toots 10 pe oe SKN 320 SKR 3201.20 300 en Mo 200 00 100 70 Saw ec 0 iy 100° 200-900. 400:«A 0 Tame 80 700 0 °C 200 Fig. 1a Power dissipation vs. forward current and case tamperature 730) w neo 898 % bl nfo 7 9% 00 s 100 00 110 120 oo 180 Mo tow Se O° iy 100 200-900 400 AO Tor 60 00 180% 200° Fig. 1b Power dissipation vs. forward current and case temperature 800 NTT LUT 4 ‘ ATT SKN S007 200, te, 400 1 iste tata oo en c't20 1] 200) 900 00.80 200] 200] r 4 ae ‘SKN 320 100] SKR 3z0 Nha "ay | a 90 Teas 80 0 180 ‘200 °0 Teas 60 100 wo °C 200 Fig. 3 Rated forward current vs. case temperature Be-26 MM 4136671 0006324 510 mw Fig. 3b Rated forward current vs. case temperature ‘© by SEMIKRONSEMIKRON 2 088 TMT 3 S| SKN 400 rl Zab oss) on Zahic ° 208 008 Thi Zune Serr wR wT oe tat {or 0 wT wes tot Fig. 5 Transient thermal impedance vs. time Fig. 5b Transient thermal impedance vs. time (OTT EW TT 1 ee SKN 3207-7, | 000} SK BZO 800 yj + 100-fr60 26 t [bast 00 / eo} 400 1 100] Ty 2 OPE 26 2C- 435 200 / if * i Ei “oy Os + wv Oe Oe + wv Fig. 6 a Forward characteristics Fig. 6 b Forward characteristics tow) "es TTT rT e Nesta) jr25°C [Ty max, ” SEN332]1 5000 | soo SKN400 | e000 | 7500 “ " raf Xt 1 oven on ae + os Vane, aa I ‘et ‘of ‘oF Fig.7 Surge overioad current vs. time MB 6136671 0006325 757 El ———33-5 ms 0? © by SEMIKRONSKN 320 SKR 320 Case E 16 JEG: A228 DIN 41 888: 107 B max.24, ‘SKN 400 Case E17 IEC: A22B DIN 41 888: 10762 mox24 SKN 450 ‘SKN 501 Case E 18 DIN 41 814: 151 A2 JEDEC: DO-200 AA SKN 870 Case E19 DIN 41 814: 15362 JEDEC: DO-200 AB Dimansions in mm Be-28 (0895 MB 4136671 O00b32b £93 ‘© by SEMIKRON