IRF614S, SiHF614S

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
VDS (V) 250 Definition
RDS(on) () VGS = 10 V 2.0 • Surface Mount
• Available in Tape and Reel
Qg (Max.) (nC) 8.2
• Dynamic dV/dt Rating
Qgs (nC) 1.8 • Repetitive Avalanche Rated
Qgd (nC) 4.5 • Fast Switching
Configuration Single • Ease of Paralleling
• Simple Drive Requirements
D • Compliant to RoHS Directive 2002/95/EC
D2PAK (TO-263) DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die sizes up to HEX-4. It
G D provides the highest power capability and the lowest
S S possible on-resistance in any existing surface mount
package. The D2PAK (TO-263) is suitable for high current
N-Channel MOSFET
applications because of its low internal connection
resistance and can dissipate up to 2.0 W in a typical surface
mount application.
ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF614S-GE3 - SiHF614STRR-GE3a
IRF614SPbF IRF614STRLPbFa IRF614STRRPbFa
Lead (Pb)-free
SiHF614S-E3 SiHF614STL-E3a SiHF614STR-E3a
Note
a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 250
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 2.7
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 1.7 A
Pulsed Drain Currenta IDM 8.0
Linear Derating Factor 0.29
W/°C
Linear Derating Factor (PCB Mount)e 0.025
Single Pulse Avalanche Energyb EAS 61 mJ
Avalanche Currenta IAR 2.7 A
Repetitive Avalanche Energya EAR 3.6 mJ
Maximum Power Dissipation TC = 25 °C 36
PD W
Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.1
Peak Diode Recovery dV/dtc dV/dt 4.8 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 13 mH, Rg = 25 , IAS = 2.7 A (see fig. 12).
c. ISD  2.7 A, dI/dt  65 A/μs, VDD  VDS, TJ  150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91026 www.vishay.com
S11-1063-Rev. C, 30-May-11 1
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IRF614S, SiHF614S
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Maximum Junction-to-Ambient
RthJA - 40 °C/W
(PCB Mount)a
Maximum Junction-to-Case (Drain) RthJC - 3.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 250 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.39 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 250 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 200 V, VGS = 0 V, TJ = 125 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 1.6 Ab - - 2.0 
Forward Transconductance gfs VDS = 50 V, ID = 1.6 Ab 0.90 - - S
Dynamic
Input Capacitance Ciss - 140 -
VGS = 0 V,
Output Capacitance Coss VDS = 25 V, - 42 - pF
f = 1.0 MHz, see fig. 5
Reverse Transfer Capacitance Crss - 9.6 -
Total Gate Charge Qg - - 8.2
ID = 2.7 A, VDS = 200 V,
Gate-Source Charge Qgs VGS = 10 V - - 1.8 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 4.5
Turn-On Delay Time td(on) - 7.0 -
Rise Time tr - 7.6 -
VDD = 125 V, ID = 2.7 A, ns
Turn-Off Delay Time td(off) Rg = 24 , RD = 45 , see fig. 10b - 16 -
Fall Time tf - 7.0 -

Internal Drain Inductance LD Between lead, D

- 4.5 -
6 mm (0.25") from
nH
package and center of G

Internal Source Inductance LS - 7.5 -

die contact S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D

- - 2.7
showing the
G A
integral reverse
Pulsed Diode Forward Currenta ISM p - n junction diode
S
- - 8.0

Body Diode Voltage VSD TJ = 25 °C, IS = 2.7 A, VGS = 0 Vb - - 2.0 V

Body Diode Reverse Recovery Time trr - 190 390 ns
TJ = 25 °C, IF = 2.7 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 0.64 1.3 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91026

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 IRF614S, SiHF614S
Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

VGS
Top 15 V
10 V
8.0 V

ID, Drain Current (A)

100
ID, Drain Current (A)

7.0 V 150 °C
100 6.0 V
5.5 V
5.0 V 25 °C
Bottom 4.5 V
10-1
10-1
4.5 V

10-2
20 µs Pulse Width 20 µs Pulse Width
TC = 25 °C VDS = 50 V
10-2
10-1 100 101 4 5 6 7 8 9 10

91026_01 VDS, Drain-to-Source Voltage (V) 91026_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics

RDS(on), Drain-to-Source On Resistance

3.0
VGS ID = 2.7 A
Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)

100 7.0 V
6.0 V 2.0
(Normalized)

5.5 V
5.0 V 4.5 V
Bottom 4.5 V 1.5

10-1 1.0

0.5
20 µs Pulse Width
TC = 150 °C
10-2 0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160

91026_02 VDS, Drain-to-Source Voltage (V) 91026_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 150 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91026 www.vishay.com

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IRF614S, SiHF614S
Vishay Siliconix

300 101
VGS = 0 V, f = 1 MHz

ISD, Reverse Drain Current (A)

Ciss = Cgs + Cgd, Cds Shorted
250 Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)

200
Ciss
150 150 °C

100 25 °C
100
Coss

50 Crss
VGS = 0 V
0
100 101 0.5 0.7 0.9 1.1 1.3 1.5

91026_05 VDS, Drain-to-Source Voltage (V) 91026_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 102
ID = 2.7 A
VGS, Gate-to-Source Voltage (V)

5
Operation in this area limited
16 VDS = 200 V by RDS(on)
2
ID, Drain Current (A)

VDS = 125 V 10
12 VDS = 50 V 5

100 µs
2
8
1 1 ms
5
4
TC = 25 °C 10 ms
For test circuit 2 TJ = 150 °C
see figure 13 Single Pulse
0 0.1
2 5 2 5 2 5
0 2 4 6 8 1 10 102 103

91026_06 QG, Total Gate Charge (nC) 91026_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91026

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 IRF614S, SiHF614S
Vishay Siliconix

RD
VDS

VGS
D.U.T.
3.0 Rg
+
- VDD
2.5
10 V
ID, Drain Current (A)

Pulse width ≤ 1 µs
2.0
Duty factor ≤ 0.1 %

1.5
Fig. 10a - Switching Time Test Circuit

1.0

0.5 VDS
90 %

0.0
25 50 75 100 125 150

91026_09 TC, Case Temperature (°C)

10 %
VGS
td(on) tr td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

0 − 0.5
1
0.2
0.1 PDM
0.05
0.02
0.1 Single Pulse t1
0.01
(Thermal Response) t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91026_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91026 www.vishay.com

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IRF614S, SiHF614S
Vishay Siliconix

L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
Rg D.U.T +
V DD
- VDS
I AS
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

140
ID
EAS, Single Pulse Energy (mJ)

120 Top 1.2 A

1.7 A
Bottom 2.7 A
100

80

60

40

20
VDD = 50 V
0
25 50 75 100 125 150

91026_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ

10 V 12 V 0.2 µF
0.3 µF

QGS QGD +
VDS
D.U.T. -

VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91026

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 IRF614S, SiHF614S
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91026.

Document Number: 91026 www.vishay.com

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 Package Information
Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

A
(Datum A)
3 4 A A B
E c2
H
4 L1 4 Gauge
plane
0° to 8° B
D 5 Detail A Seating plane
H
C C L A1
1 L3 L4
2 3
Detail “A”
L2
Rotated 90° CW
B B
scale 8:1

A
2 x b2
2xb c
E
0.010 M A M B
± 0.004 M B
2xe
Base
5 metal D1
Plating 4
b1, b3

(c) c1 5

(b, b2)
Lead tip Section B - B and C - C E1 4
Scale: none View A - A

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com

Revision: 15-Sep-08 1
 AN826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead

0.420
(10.668)

(9.017)
0.355
(16.129)
0.635

0.145
(3.683)

0.135
(3.429)

0.200 0.050
(5.080) (1.257)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index

Document Number: 73397 www.vishay.com

11-Apr-05 1
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Revision: 12-Mar-12 1 Document Number: 91000