IRF540S, SiHF540S

Vishay Siliconix

Power MOSFET

FEATURES
PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21
VDS (V) 100 Definition
RDS(on) () VGS = 10 V 0.077 • Surface Mount
Qg (Max.) (nC) 72 • Available in Tape and Reel
Qgs (nC) 11 • Dynamic dV/dt Rating
Qgd (nC) 32
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
Configuration Single
• Fast Switching
• Ease of Paralleling
D
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
G cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
G D
S on-resistance in any existing surface mount package. The
S D2PAK (TO-263) is suitable for high current applications
N-Channel MOSFET because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.

ORDERING INFORMATION
Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF540S-GE3 SiHF540STRL-GE3a SiHF540STRR-GE3a
IRF540SPbF IRF540STRLPbFa IRF540STRRPbFa
Lead (Pb)-free
SiHF540S-E3 SiHF540STL-E3a SiHF540STR-E3a
Note
a. See device orientation.

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 100
V
Gate-Source Voltage VGS ± 20
TC = 25 °C 28
Continuous Drain Current VGS at 10 V ID
TC = 100 °C 20 A
Pulsed Drain Currenta IDM 110
Linear Derating Factor 1.0
W/°C
Linear Derating Factor (PCB Mount)e 0.025
Single Pulse Avalanche Energyb EAS 230 mJ
Avalanche Currenta IAR 28 A
Repetitive Avalanche Energya EAR 15 mJ
Maximum Power Dissipation TC = 25 °C 150
PD W
Maximum Power Dissipation (PCB Mount)e TA = 25 °C 3.7
Peak Diode Recovery dV/dtc dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 440 μH, Rg = 25 , IAS = 28 A (see fig. 12).
c. ISD  28 A, dI/dt  170 A/μs, VDD  VDS, TJ  175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91022 www.vishay.com
S11-1046-Rev. D, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRF540S, SiHF540S
Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient RthJA - 62
Maximum Junction-to-Ambient
RthJA - 40 °C/W
(PCB Mount)a
Maximum Junction-to-Case (Drain) RthJC - 1.0
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage VDS VGS = 0, ID = 250 μA 100 - - V
VDS Temperature Coefficient VDS/TJ Reference to 25 °C, ID = 1 mA - 0.13 - V/°C
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V
Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA
VDS = 100 V, VGS = 0 V - - 25
Zero Gate Voltage Drain Current IDSS μA
VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250
Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 17 Ab - - 0.077 
Forward Transconductance gfs VDS = 50 V, ID = 17 Ab 8.7 - - S
Dynamic
Input Capacitance Ciss VGS = 0 V, - 1700 -
Output Capacitance Coss VDS = 25 V, - 560 - pF
Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 120 -
Total Gate Charge Qg - - 72
ID = 17 A, VDS = 80 V,
Gate-Source Charge Qgs VGS = 10 V - - 11 nC
see fig. 6 and 13b
Gate-Drain Charge Qgd - - 32
Turn-On Delay Time td(on) - 11 -
Rise Time tr - 44 -
VDD = 50 V, ID = 17 A, ns
Turn-Off Delay Time td(off) Rg = 9.1 , RD = 2.9 , see fig. 10b - 53 -
Fall Time tf - 43 -

Internal Drain Inductance LD Between lead, D

- 4.5 -
6 mm (0.25") from
package and center of nH
G

Internal Source Inductance LS die contact - 7.5 -

S

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current IS MOSFET symbol D

- - 28
showing the
integral reverse G
A
Pulsed Diode Forward Currenta ISM p - n junction diode S - - 110

Body Diode Voltage VSD TJ = 25 °C, IS = 28 A, VGS = 0 Vb - - 2.5 V

Body Diode Reverse Recovery Time trr - 180 360 ns
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb
Body Diode Reverse Recovery Charge Qrr - 1.3 2.8 μC
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.

www.vishay.com Document Number: 91022

2 S11-1046-Rev. D, 30-May-11
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 IRF540S, SiHF540S
Vishay Siliconix

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

VGS 102
102 Top 15 V
10 V 25 °C
8.0 V
ID, Drain Current (A)

7.0 V

ID, Drain Current (A)

6.0 V 175 °C
5.5 V
5.0 V
Bottom 4.5 V
101
4.5 V
101

20 µs Pulse Width 20 µs Pulse Width

TC = 25 °C VDS = 50 V
10-1 100 101 4 5 6 7 8 9 10
91022_01 VDS, Drain-to-Source Voltage (V) 91022_03 VGS, Gate-to-Source Voltage (V)

Fig. 1 - Typical Output Characteristics, TC = 25 °C RDS(on), Drain-to-Source On Resistance Fig. 3 - Typical Transfer Characteristics

3.0
102 VGS ID = 17 A
Top 15 V VGS = 10 V
10 V 2.5
8.0 V
ID, Drain Current (A)

7.0 V
2.0
(Normalized)

6.0 V
5.5 V
5.0 V 1.5
101 Bottom 4.5 V 4.5 V

1.0

0.5
20 µs Pulse Width
TC = 175 °C
0.0
10-1 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160180

91022_02 VDS, Drain-to-Source Voltage (V) 91022_04 TJ, Junction Temperature (°C)

Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91022 www.vishay.com

S11-1046-Rev. D, 30-May-11 3
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IRF540S, SiHF540S
Vishay Siliconix

3000
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted 150 °C

ISD, Reverse Drain Current (A)

2400 Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)

101 25 °C
Ciss
1800

1200
Coss 100

600
Crss
VGS = 0 V
0 10-1
100 101 0.4 0.8 1.2 1.6

91022_05 VDS, Drain-to-Source Voltage (V) 91022_07 VSD, Source-to-Drain Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 103
ID = 17 A Operation in this area limited
VGS, Gate-to-Source Voltage (V)

5 by RDS(on)
VDS = 80 V
16 2
VDS = 50 V
ID, Drain Current (A)

102 10 µs
VDS = 20 V
12 5
100 µs
2
8 1 ms
10

4 5 10 ms
TC = 25 °C
For test circuit 2 TJ = 175 °C
see figure 13 Single Pulse
0 1
2 5 2 5 2 5 2 5 2 5
0 10 20 30 40 50 60 70 0.1 1 10 102 103 104

91022_06 QG, Total Gate Charge (nC) 91022_08 VDS, Drain-to-Source Voltage (V)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area

www.vishay.com Document Number: 91022

4 S11-1046-Rev. D, 30-May-11
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 IRF540S, SiHF540S
Vishay Siliconix

RD
VDS
30 VGS
D.U.T.
Rg
25 +
- VDD
ID, Drain Current (A)

20 10 V
Pulse width ≤ 1 µs
15 Duty factor ≤ 0.1 %

10 Fig. 10a - Switching Time Test Circuit

5
VDS
0 90 %
25 50 75 100 125 150 175

91022_09 TC, Case Temperature (°C)

10 %
Fig. 9 - Maximum Drain Current vs. Case Temperature VGS
td(on) tr td(off) tf

Fig. 10b - Switching Time Waveforms

10
Thermal Response (ZthJC)

1
D = 0.5
PDM
0.2
0.1 0.1 t1
0.05 t2
0.02 Single Pulse Notes:
0.01 (Thermal Response) 1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5 10-4 10-3 10-2 0.1 1 10

91022_11 t1, Rectangular Pulse Duration (s)

Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

Document Number: 91022 www.vishay.com

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IRF540S, SiHF540S
Vishay Siliconix

L
VDS VDS
Vary tp to obtain
tp
required IAS
VDD
Rg D.U.T +
V DD
- VDS
I AS
10 V
tp 0.01 Ω
IAS

Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms

600
ID
Top
EAS, Single Pulse Energy (mJ)

11 A
500 20 A
Bottom 28 A
400

300

200

100

VDD = 25 V
0
25 50 75 100 125 150 175

91022_12c Starting TJ, Junction Temperature (°C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

Current regulator
Same type as D.U.T.

QG 50 kΩ
10 V 12 V 0.2 µF
0.3 µF
QGS QGD +
VDS
D.U.T. -
VG
VGS

3 mA

Charge
IG ID
Current sampling resistors

Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit

www.vishay.com Document Number: 91022

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 IRF540S, SiHF540S
Vishay Siliconix

Peak Diode Recovery dV/dt Test Circuit

+ Circuit layout considerations

D.U.T.
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
-

- +
-

Rg • dV/dt controlled by Rg +
• Driver same type as D.U.T. VDD
-
• ISD controlled by duty factor “D”
• D.U.T. - device under test

Driver gate drive

Period P.W.
D=
P.W. Period

VGS = 10 Va

D.U.T. lSD waveform

Reverse
recovery Body diode forward
current current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
VDD

Re-applied
voltage
Body diode forward drop
Inductor current

Ripple ≤ 5 % ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91022.

Document Number: 91022 www.vishay.com

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 Package Information
Vishay Siliconix

TO-263AB (HIGH VOLTAGE)

A
(Datum A)
3 4 A A B
E c2
H
4 L1 4 Gauge
plane
0° to 8° B
D 5 Detail A Seating plane
H
C C L A1
1 L3 L4
2 3
Detail “A”
L2
Rotated 90° CW
B B
scale 8:1

A
2 x b2
2xb c
E
0.010 M A M B
± 0.004 M B
2xe
Base
5 metal D1
Plating 4
b1, b3

(c) c1 5

(b, b2)
Lead tip Section B - B and C - C E1 4
Scale: none View A - A

MILLIMETERS INCHES MILLIMETERS INCHES

DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 -
A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 -
b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066
c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208
ECN: S-82110-Rev. A, 15-Sep-08
DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimensions are shown in millimeters (inches).
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
outmost extremes of the plastic body at datum A.
4. Thermal PAD contour optional within dimension E, L1, D1 and E1.
5. Dimension b1 and c1 apply to base metal only.
6. Datum A and B to be determined at datum plane H.
7. Outline conforms to JEDEC outline to TO-263AB.

Document Number: 91364 www.vishay.com

Revision: 15-Sep-08 1
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Revision: 01-Jan-2019 1 Document Number: 91000

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