Supertex inc.

DN2535
N-Channel Depletion-Mode
Vertical DMOS FETs
Features General Description
►► High input impedance The Supertex DN2535 is a low threshold depletion mode
►► Low input capacitance (normally-on) transistor utilizing an advanced vertical
►► Fast switching speeds DMOS structure and Supertex’s well-proven silicon-gate
►► Low on-resistance manufacturing process. This combination produces a device
►► Free from secondary breakdown with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
►► Low input and output leakage
coefficient inherent in MOS devices. Characteristic of all
Applications MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
►► Normally-on switches
►► Solid state relays
Supertex’s vertical DMOS FETs are ideally suited to a
►► Converters
wide range of switching and amplifying applications where
►► Linear amplifiers high breakdown voltage, high input impedance, low input
►► Constant current sources capacitance, and fast switching speeds are desired.
►► Power supply circuits
►► Telecom

Ordering Information Product Summary

Part Number Package Option Packing RDS(ON) IDSS
BVDSX/BVDGX
DN2535N3-G TO-92 1000/Bag (max) (min)

DN2535N3-G P002 350V 25Ω 150mA

DN2535N3-G P003
DN2535N3-G P005 TO-92 2000/Reel
Pin Configuration
DRAIN
DN2535N3-G P013
DN2535N3-G P014
DN2535N5-G TO-220 50/Tube
DRAIN
-G denotes a lead (Pb)-free / RoHS compliant package. SOURCE
Contact factory for Wafer / Die availablity. SOURCE
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. GATE

Absolute Maximum Ratings GATE DRAIN

Parameter Value 3-Lead TO-92 3-Lead TO-220

Drain-to-source voltage BVDSX Product Marking

Drain-to-gate voltage BVDGX SiDN YY = Year Sealed
Gate-to-source voltage ±20V 2 5 3 5 WW = Week Sealed
YYWW = “Green” Packaging
Operating and storage
-55OC to +150OC Package may or may not include the following marks: Si or
temperature
Absolute Maximum Ratings are those values beyond which damage to the device 3-Lead TO-92
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All L = Lot Number
voltages are referenced to device ground. YY = Year Sealed
DN2535N5
LLLLLLLLL WW = Week Sealed
Typical Thermal Resistance YYWW
= “Green” Packaging

Package θja Package may or may not include the following marks: Si or

TO-92 132 C/W O 3-Lead TO-220

TO-220 29 C/WO

Doc.# DSFP-DN2535
B062813
Supertex inc.
www.supertex.com
 DN2535
Thermal Characteristics
ID ID Power Dissipation
Package IDR† IDRM
(continuous)† (pulsed) @TC = 25OC
TO-92 120mA 500mA 1.0W 120mA 500mA
TO-220 500mA 500mA 15W 500mA 500mA
Notes:
† ID (continuous) is limited by max rated Tj.

Electrical Characteristics (T A
= 25OC unless otherwise specified)

Sym Parameter Min Typ Max Units Conditions

BVDSX Drain-to-source breakdown voltage 350 - - V VGS = -5.0V, ID = 100µA
VGS(OFF) Gate-to-source off voltage -1.5 - -3.5 V VDS = 25V, ID = 10µA
ΔVGS(OFF) Change in VGS(OFF) with temperature - - -4.5 mV/ C O
VDS = 25V, ID = 10µA
IGSS Gate body leakage current - - 100 nA VGS = ±20V, VDS = 0V
- - 10 µA VDS = Max rating, VGS = -10V
ID(OFF) Drain-to-source leakage current VDS = 0.8 Max Rating,
- - 1.0 mA
VGS = -10V, TA = 125OC
IDSS Saturated drain-to-source current 150 - - mA VGS = 0V, VDS = 25V
RDS(ON) Static drain-to-source on-state resistance - 17 25 Ω VGS = 0V, ID = 120mA
ΔRDS(ON) Change in RDS(ON) with temperature - - 1.1 %/ C O
VGS = 0V, ID = 120mA
GFS Forward transconductance - 325 - mmho VDS = 10V, ID = 100mA
CISS Input capacitance - 200 300 VGS = -10V,
COSS Common source output capacitance - 12 30 pF VDS = 25V,
CRSS Reverse transfer capacitance - 1.0 5.0 f = 1.0MHz
td(ON) Turn-on delay time - - 10
tr Rise time - - 15 VDD = 25V,
ns ID = 150mA,
td(OFF) Turn-off delay time - - 15 RGEN = 25Ω,
tf Fall time - - 20
VSD Diode forward voltage drop - - 1.8 V VGS = -10V, ISD = 120mA
trr Reverse recovery time - 800 - ns VGS = -10V, ISD = 1.0A
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.

Switching Waveforms and Test Circuit

0V 90% VDD
INPUT Pulse RL
10% Generator
-10V OUTPUT
t(ON) t(OFF)
RGEN
td(ON) tr td(OFF) tf

VDD INPUT D.U.T.

10% 10%
OUTPUT
0V 90% 90%

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 DN2535
Typical Performance Curves
Output Characteristics Saturation Characteristics
0.5 250
VGS = 1.0V
0.5V VGS = 1.0V
0.4 200 0.5V
0V

0V

ID (milliamps)
ID (amperes)

0.3 150

-0.5V
0.2 100

0.1 -0.5V 50

-1.0V
-1.0V
0 0
0 80 160 240 320 400 0 1 2 3 4 5
VDS (volts) VDS (volts)

Transconductance vs. Drain Current Power Dissipation vs. Case Temperature

0.5 20
VDS = 10V TA = 25OC

TA = -55OC
0.4 TO-220

0.3 25OC
GFS (seimens)

PD (watts)

10
125OC
0.2

0.1

TO-92

0 0
0 50 100 150 200 250 0 25 50 75 100 125 150
ID (amperes) TC (OC)

Maximum Rated Safe Operating Area Thermal Response Characteristics

1.0 1.0
TO-92/TO-220 (pulsed)
TA = 25OC TO-220 (DC)
Thermal Resistance (normalized)

0.8

0.1 TO-92 (DC)

ID (amperes)

0.6

0.4 TO-220
0.01 TC = 25OC
PD = 15W

0.2 TO-92
TC = 25OC
PD = 1.0W
TC = 25OC
0.001 0
1.0 10 100 1000 0.001 0.01 0.1 1.0 10
VDS (volts) tp (seconds)

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 DN2535
Typical Performance Curves (cont.)
BVDSS Variation with Temperature On-Resistance vs. Drain Current
1.10 100
VGS = -5.0V VGS = 0V

1.05 80
BVDSS (normalized)

RDSS(ON) (ohms)
1.00 60

0.95 40

0.90 20

0.85 0
-50 0 50 100 150 0 80 160 240 320 400

Tj (OC) ID (amperes)

Transfer Characteristics V(th) and RDS Variation with Temperature

2.5
0.40
VDS = 10V TA = -55OC

0.32 2.0
25OC VGS(th) (normalized) RDS(ON) @ ID = 120mA

1.5
ID (amperes)

0.24
125OC

VGS(OFF) @10µA
0.16 1.0

0.08 0.5

0 0
-3 -2 -1 0 1 2 -50 0 50 100 150
VGS (volts) Tj (OC)

Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics

200
f = 1MHz
CISS 15
VGS = -10V

150
10
C (picofarads)

VGS (volts)

100 5
VDS = 20V

200pF
0 VDS = 40V
50

COSS -5
CRSS 170pF
0
0 10 20 30 40 0 0.4 0.8 1.2 1.6 2.0
VDS (volts) QG (nanocoulombs)

Doc.# DSFP-DN2535
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Supertex inc.
4 www.supertex.com
 DN2535
3-Lead TO-92 Package Outline (N3)
D

A
Seating
Plane 1 2 3

b c
e1
e

Front View Side View

E
E1
1 3

Bottom View

Symbol A b c D E E1 e e1 L
MIN .170 .014† .014† .175 .125 .080 .095 .045 .500
Dimensions
NOM - - - - - - - - -
(inches)
MAX .210 .022† .022† .205 .165 .105 .105 .055 .610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.

Doc.# DSFP-DN2535
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 DN2535
3-Lead TO-220 Package Outline (N5)
A
Seating
E Plane
A E
E2 A1
ΦP
Q
H1 H1

4 D1
D
Chamfer
Optional Thermal
D1 Pad

1 2 3 E1

View L
B

A2

e c A
Front View Side View View A - A

1 2 3
L1

b2 b
View B

Symbol A A1 A2 b b2 c D D1 D2 E E1 E2 e H1 L L1 Q ΦP
MIN .140 .020 .080 .015 .045 .012 †
.560 .326 †
.474 †
.380 .270 0.20* .230 .500 .200* .100 .139
Dimen-
.100
sion NOM - - - .027 .057 - - - - - - - - - - - -
BSC
(inches)
MAX .190 .055 .120 †
.040 .070 .024 .650 .361 †
.507 .420 .350 .030 .270 .580 .250 .135 .161
JEDEC Registration TO-220, Variation AB, Issue K, April 2002.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc. #: DSPD-3TO220N5, Version C041009.

(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)

©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Supertex inc.
1235 Bordeaux Drive, Sunnyvale, CA 94089
Doc.# DSFP-DN2535 Tel: 408-222-8888
B062813 6 www.supertex.com
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Microchip:
DN2535N3-P002-G DN2535N3-P014-G DN2535N3-P013-G DN2535N3-G DN2535N3-P003-G DN2535N3
DN2535N3-P014 DN2535N3-P013 DN2535N3-P003 DN2535N3-P002 DN2535N5 DN2535N5-G DN2535N3-G
P003 DN2535N3-G P005 DN2535N3-G P013 DN2535N3-G P002 DN2535N3-G P014 DN2535N3-G-P013
DN2535N3-G-P003