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Features: Description:
• Single or Dual Resistor Network Options The MCP45XX and MCP46XX devices offer a wide
• Potentiometer or Rheostat Configuration Options range of product offerings using an I2C interface. This
• Resistor Network Resolution family of devices support 7-bit and 8-bit resistor
- 7-bit: 128 Resistors (129 Steps) networks, volatile memory configurations, and
- 8-bit: 256 Resistors (257 Steps) Potentiometer and Rheostat pinouts.
• RAB Resistances Options of:
- 5 k Package Types (top view)
- 10 k
MCP45X1 MCP45X2
- 50 k
Single Potentiometer Single Rheostat
- 100 k
• Zero-Scale to Full-Scale Wiper Operation HVC / A0 1 8 VDD HVC / A0 1 8 VDD
• Low Wiper Resistance: 75 (typical) SCL 2 7 P0B SCL 2 7 A1
• Low Tempco: SDA 3 6 P0W SDA 3 6 P0B
VSS 4 5 P0A VSS 4 5 P0W
- Absolute (Rheostat): 50 ppm typical
(0°C to 70°C) MSOP MSOP
- Ratiometric (Potentiometer): 15 ppm typical
• I2C Serial Interface HVC / A0 1 8 VDD HVC / A0 1 8 VDD
- 100 kHz, 400 kHz and 3.4 MHz Support SCL 2 EP 7 P0B SCL 2 EP 7 A1
• Serial Protocol Allows: SDA 3 9 6 P0W SDA 3 9 6 P0B
- High-Speed Read/Write to Wiper VSS 4 5 P0A VSS 4 5 P0W
- Increment/Decrement of Wiper
DFN 3x3 (MF) * DFN 3x3 (MF) *
• Resistor Network Terminal Disconnect Feature
via the Terminal Control (TCON) Register MCP46X1 Dual Potentiometers
HVC/A0
• Brown-Out Reset Protection (1.5V typical)
• Serial Interface Inactive Current (2.5 uA typical)
VDD
A1
A2
• High-Voltage Tolerant Digital Inputs: up to 12.5V
• Wide Operating Voltage: HVC/A0 1 14 VDD 16 15 14 13
SCL 2 13 A1 SCL 1 12 NC
- 2.7V to 5.5V - Device Characteristics Specified
SDA 3 12 A2 SDA 2 EP 11 NC
- 1.8V to 5.5V - Device Operation 11 17
VSS 4 NC VSS 3 10 P0B
• Wide Bandwidth (-3dB) Operation: P1B 5 10 P0B VSS 4 9 P0W
- 2 MHz (typical) for 5.0 k Device P1W 6 9 P0W 5 6 7 8
• Extended Temperature Range (-40°C to +125°C) P1A 7 8 P0A
P1W
P1B
P0A
P1A
TSSOP
QFN-16 4x4 (ML) *
MCP46X2 Dual Rheostat
Device Features
POR Wiper
WiperLock
# of Steps
# of POTs
Resistance (typical)
Memory
VDD
Setting
Control
Type
Wiper
Device Operating
Configuration Wiper -
RAB Options (k)
RW () Range (2)
MCP4531 1 Potentiometer(1) I2 C RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4532 1 Rheostat I2 C RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4541 1 Potentiometer(1) I2 C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4542 1 Rheostat I2 C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4551 1 Potentiometer(1) I2 C RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4552 1 Rheostat I2 C RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4561 1 Potentiometer(1) I2 C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4562 1 Rheostat I2 C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4631 2 Potentiometer(1) I2 C RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
2C
MCP4632 2 Rheostat I RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 129 1.8V to 5.5V
MCP4641 2 Potentiometer(1) I2 C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
MCP4642 2 Rheostat I2 C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 129 2.7V to 5.5V
(1)
MCP4651 2 Potentiometer I2 C RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
MCP4652 2 Rheostat I2 C RAM No Mid-Scale 5.0, 10.0, 50.0, 100.0 75 257 1.8V to 5.5V
(1) 2
MCP4661 2 Potentiometer I C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
MCP4662 2 Rheostat I2 C EE Yes NV Wiper 5.0, 10.0, 50.0, 100.0 75 257 2.7V to 5.5V
Note 1: Floating either terminal (A or B) allows the device to be used as a Rheostat (variable resistor).
2: Analog characteristics only tested from 2.7V to 5.5V unless otherwise noted.
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at those or any other conditions above those indicated in
the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended peri-
ods may affect device reliability.
SCL
91 93
90 92
SDA
START STOP
Condition Condition
FIGURE 1-1: I2C Bus Start/Stop Bits Timing Waveforms.
RHVC (kOhms)
500
IHVC (µA)
150 200
IDD (µA)
IHVC
400 0
400 kHz, 5.5V 100 -200
300 3.4 MHz, 4.5V
100 kHz, 5.5V
1.7 MHz, 4.5V -400
200
50 -600
100
100 kHz, 2.7V 400 kHz, 2.7V RHVC -800
0 0 -1000
-40 0 40 80 120 2 3 4 5 6 7 8 9 10
Temperature (°C) VHVC (V)
FIGURE 2-1: Device Current (IDD) vs. I2C FIGURE 2-4: HVC Pull-up/Pull-down
Frequency (fSCL) and Ambient Temperature Resistance (RHVC) and Current (IHVC) vs. HVC
(VDD = 2.7V and 5.5V). Input Voltage (VHVC) (VDD = 5.5V).
12
3
HVC VPP Threshold (V)
10
2.5 5.5V Entry
2.7V Entry
Istandby (µA)
8
5.5V
2
6 5.5V Exit
1.5
4
2.7V Exit
1 2
2.7V
0.5 0
-40 0 40 80 120 -40 -20 0 20 40 60 80 100 120
Temperature (°C) Ambient Temperature (°C)
FIGURE 2-2: Device Current (ISHDN) and FIGURE 2-5: HVC High Input Entry/Exit
VDD (HVC = VDD) vs. Ambient Temperature. Threshold vs. Ambient Temperature and VDD.
420
400
380
IWRITE (µA)
360
5.5V
340
320
300
-40 0 40 80 120
Temperature (°C)
Wiper Resistance (R W )
100
-40C DNL 25C DNL 85C DNL 125C DNL 0.2 100
-40C DNL 25C DNL 85C DNL 125C DNL
0.75
DNL INL INL
0.1
Error (LSb)
Error (LSb)
80 80 0.25
(ohms)
(ohms)
0
60 60 -0.25
-0.1
DNL
40 -40°C 25°C RW -0.2 40 -40°C -0.75
85°C 85°C 25°C RW
125°C 125°C
20 -0.3 20 -1.25
0 32 64 96 128 160 192 224 256 0 32 64 96 128 160 192 224 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-6: 5 k Pot Mode – RW (), FIGURE 2-9: 5 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V). Ambient Temperature (VDD = 5.5V).
Wiper Resistance (R W )
-40C INL 25C INL 85C INL 125C INL -40C DNL 25C DNL 85C DNL 125C DNL
Wiper Resistance (R W)
260 -40C DNL 25C DNL 85C DNL 125C DNL 0.2
INL 220 INL
220 DNL 4
Error (LSb)
0.1
Error (LSb)
(ohms)
(ohms)
180 180
0
140 140 2
RW
RW -0.1
100 100
125°C 0
60 85°C -0.2 60 -40°C
25°C 25°C DNL
-40°C 125°C 85°C
20 -0.3 20 -2
0 32 64 96 128 160 192 224 256 0 32 64 96 128 160 192 224 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-7: 5 k Pot Mode – RW (), FIGURE 2-10: 5 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V). Ambient Temperature (VDD = 3.0V).
-40C INL 25C INL 85C INL 125C INL 0.4 -40C DNL 25C DNL 85C DNL 125C DNL
Wiper Resistance (RW)
0.2
(ohms)
(ohms)
1500 1500
0.1 58
1000 0 1000 38
-0.1
500 DNL 500 18
-0.2 RW DNL
RW
0 -0.3 0 -2
0 64 128 192 256 0 64 128 192 256
Wiper Setting (decimal) Wiper Setting (decimal)
5300 6000
Nominal Resistance (RAB)
5250 5000
RWB (Ohms)
2.7V 4000
5200
(Ohms)
3000
5150
5.5V 2000
-40°C
5100 1.8V 25°C
1000 85°C
125°C
5050 0
-40 0 40 80 120 0 32 64 96 128 160 192 224 256
Ambient Temperature (°C) Wiper Setting (decimal)
FIGURE 2-12: 5 k – Nominal Resistance FIGURE 2-13: 5 k – RWB () vs. Wiper
() vs. Ambient Temperature and VDD. Setting and Ambient Temperature.
Wiper Resistance (R W )
-40C DNL 25C DNL 85C DNL 125C DNL 0.2 -40C DNL 25C DNL 85C DNL 125C DNL
100 100
0.5
DNL INL 0.1 INL
Error (LSb)
Error (LSb)
80 80
(ohms)
(ohms)
0 0
60 60
-0.1
DNL -0.5
40 25°C -40°C -0.2 40 85°C 25°C -40°C RW
RW 125°C
125°C 85°C
20 -0.3 20 -1
0 25 50 75 100 125 150 175 200 225 250 0 32 64 96 128 160 192 224 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-19: 10 k Pot Mode – RW (), FIGURE 2-22: 10 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V). Ambient Temperature (VDD = 5.5V).
Wiper Resistance (R W )
-40C INL 25C INL 85C INL 125C INL -40C DNL 25C DNL 85C DNL 125C DNL
Wiper Resistance (R W)
260 -40C DNL 25C DNL 85C DNL 125C DNL 0.2 3
INL
220 INL
220
DNL 2
Error (LSb)
0.1
Error (LSb)
(ohms)
(ohms)
180 180
0 1
140 140
-0.1 0
100 RW 100
DNL RW
60 -40°C -0.2 60 -40°C -1
25°C
125°C 85°C 125°C 85°C 25°C
20 -0.3 20 -2
0 32 64 96 128 160 192 224 256 0 25 50 75 100 125 150 175 200 225 250
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-20: 10 k Pot Mode – RW (), FIGURE 2-23: 10 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V). Ambient Temperature (VDD = 3.0V).
0.4
3000 3000 INL 68
(RW)(ohms)
Error (LSb)
Error (LSb)
INL 0.3
(ohms)
2500 2500 58
0.2
2000 2000 48
DNL 0.1
38
1500 0 1500
28
1000 -0.1 1000
18
500 RW -0.2 500 RW DNL 8
0 -0.3 0 -2
0 64 128 192 256 0 64 128 192 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-21: 10 k Pot Mode – RW (), FIGURE 2-24: 10 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 1.8V). Ambient Temperature (VDD = 1.8V).
10300 12000
Nominal Resistance (R AB)
10250
10000
10200
10150 8000
RWB (Ohms)
(Ohms)
10100
2.7V 6000
10050
10000 4000 -40°C
5.5V
9950 25°C
1.8V 2000 85°C
9900
125°C
9850 0
-40 0 40 80 120 0 32 64 96 128 160 192 224 256
Ambient Temperature (°C) Wiper Setting (decimal)
FIGURE 2-25: 10 k – Nominal Resistance FIGURE 2-26: 10 k – RWB () vs. Wiper
() vs. Ambient Temperature and VDD. Setting and Ambient Temperature.
Wiper Resistance (R W )
-40C DNL 25C DNL 85C DNL 125C DNL 0.2 -40C DNL 25C DNL 85C DNL 125C DNL 0.2
100 100
INL
INL
DNL 0.1 DNL 0.1
Error (LSb)
Error (LSb)
80 80
(ohms)
(ohms)
0 0
60 60
-0.1 -0.1
40 -40°C 40 -40°C RW
25°C RW -0.2 85°C 25°C -0.2
125°C
125°C 85°C
20 -0.3 20 -0.3
0 32 64 96 128 160 192 224 256 0 32 64 96 128 160 192 224 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-32: 50 k Pot Mode – RW (), FIGURE 2-35: 50 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V). Ambient Temperature (VDD = 5.5V).
Wiper Resistance (R W)
-40C INL 25C INL 85C INL 125C INL 260 -40C DNL 25C DNL 85C DNL 125C DNL 0.75
Wiper Resistance (R W)
260 -40C DNL 25C DNL 85C DNL 125C DNL 0.2 INL
0.5
220 INL 220
DNL DNL
Error (LSb)
0.1
Error (LSb)
(ohms)
0.25
(ohms)
180 180
0 0
140 140
-0.25
-0.1 RW
100 RW 100
-0.5
-0.2 -40°C
60 -40°C 60 -0.75
125°C 85°C 25°C 125°C 85°C 25°C
20 -0.3 20 -1
0 32 64 96 128 160 192 224 256 0 32 64 96 128 160 192 224 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-33: 50 k Pot Mode – RW (), FIGURE 2-36: 50 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V). Ambient Temperature (VDD = 3.0V).
15000 78.5
15000 0.5 14000
-40C Rw 25C Rw 85C Rw 125C Rw
14000 -40C Rw 25C Rw 85C Rw 125C Rw -40C INL 25C INL 85C INL 125C INL 73.5
0.4 13000 68.5
Wiper Resistance (Rw)
-40C INL 25C INL 85C INL 125C INL -40C DNL 25C DNL 85C DNL 125C DNL
13000
Wiper Resistance (RW)
10000 48.5
9000
(ohms)
9000 0.1
(ohms)
8000 43.5
8000 0 38.5
7000 7000
6000 33.5
6000 -0.1 28.5
5000 5000 23.5
4000 -0.2 4000 18.5
3000 INL -0.3 3000 13.5
2000 -0.4 2000 DNL 8.5
1000 RW 1000 3.5
0 -0.5 0 -1.5
0 64 128 192 256 0 25 50 75 100 125 150 175 200 225 250
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-34: 50 k Pot Mode – RW (), FIGURE 2-37: 50 k Rheo Mode – RW (),
INL (LSb), DNL (LSb) vs. Wiper Setting and INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 1.8V). Ambient Temperature (VDD = 1.8V).
52500 60000
AB)
52000 50000
Nominal Resistance (R
51500 1.8V
40000
RWB (Ohms)
(Ohms)
51000
30000
50500
20000 -40°C
50000 2.7V 25°C
49500 10000 85°C
5.5V 125°C
49000 0
-40 0 40 80 120 0 32 64 96 128 160 192 224 256
Ambient Temperature (°C) Wiper Setting (decimal)
FIGURE 2-38: 50 k – Nominal Resistance FIGURE 2-39: 50 k – RWB () vs. Wiper
() vs. Ambient Temperature and VDD. Setting and Ambient Temperature.
Wiper Resistance (R W )
-40C DNL 25C DNL 85C DNL 125C DNL -40C DNL 25C DNL 85C DNL 125C DNL 0.2
100 100 INL
0.1
INL
0.1
Error (LSb)
Error (LSb)
DNL DNL
80 80
(ohms)
(ohms)
0 0
60 60
-0.1
-0.1
40 25°C -40°C
40 -40°C RW -0.2
RW
125°C 85°C 25°C
125°C 85°C
20 -0.2 20 -0.3
0 32 64 96 128 160 192 224 256 0 32 64 96 128 160 192 224 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-45: 100 k Pot Mode – RW (), FIGURE 2-48: 100 k Rheo Mode – RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 5.5V). Ambient Temperature (VDD = 5.5V).
Error (LSb)
Error (LSb)
0.05
(ohms)
(ohms)
180 180
0 0
140 140
-0.05 -0.2
RW
100 RW 100
-0.1
60 -40°C 60 -40°C -0.4
-0.15
125°C 85°C 25°C 125°C 85°C 25°C
20 -0.2 20 -0.6
0 32 64 96 128 160 192 224 256 0 32 64 96 128 160 192 224 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-46: 100 k Pot Mode – RW (), FIGURE 2-49: 100 k Rheo Mode – RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 3.0V). Ambient Temperature (VDD = 3.0V).
25000 -40C DNL 25C DNL 85C DNL 125C DNL 0.25 49
RW 44
DNL 0.15 20000
20000 39
Error (LSb)
Error (LSb)
(ohms)
(ohms)
0.05 INL 34
15000 15000 29
-0.05 24
10000 10000 19
-0.15
14
5000 INL -0.25 5000 9
RW DNL 4
0 -0.35 0 -1
0 64 128 192 256 0 64 128 192 256
Wiper Setting (decimal) Wiper Setting (decimal)
FIGURE 2-47: 100 k Pot Mode – RW (), FIGURE 2-50: 100 k Rheo Mode – RW
INL (LSb), DNL (LSb) vs. Wiper Setting and (), INL (LSb), DNL (LSb) vs. Wiper Setting and
Ambient Temperature (VDD = 1.8V). Ambient Temperature (VDD = 1.8V).
103500 120000
AB)
103000
100000
102500
Nominal Resistance (R
102000
Rwb (Ohms)
80000
101500
(Ohms)
1.8V
101000 60000
100500
100000 40000 -40°C
2.7V
25°C
99500 20000 85°C
99000 5.5V 125°C
98500 0
-40 0 40 80 120 0 32 64 96 128 160 192 224 256
Ambient Temperature (°C) Wiper Setting (decimal)
FIGURE 2-51: 100 k – Nominal FIGURE 2-52: 100 k – RWB () vs. Wiper
Resistance () vs. Ambient Temperature and Setting and Ambient Temperature.
VDD .
0.12
0.1
0.09 0.1
0.08
0.07 0.08 5.5V
0.06 5.5V
%
0.06
%
0.05
0.04
0.03 3.0V 0.04
0.02
0.02 3.0V
0.01
0 0
-40 0 40 80 120 -40 0 40 80 120
Temperature (°C) Temperature (°C)
0.04 0.05
0.03 0.04
0.02 0.03
5.5V 5.5V
0.01 0.02
%
0
%
0.01
-0.01 0 3.0V
3.0V
-0.02 -0.01
-0.03 -0.02
-0.04 -0.03
-40 0 40 80 120 -40 10 60 110
Temperature (°C) Temperature (°C)
4 230
210 2.7V
3.5
5.5V 190
3 170
VOL (mV)
VIH (V)
150
2.5
130 5.5V
2 2.7V
110
90
1.5
70
1 50
-40 0 40 80 120 -40 0 40 80 120
Temperature (°C) Temperature (°C)
FIGURE 2-61: VIH (SDA, SCL) vs. VDD and FIGURE 2-63: VOL (SDA) vs. VDD and
Temperature. Temperature (IOL = 3 mA).
5.5V
VIL (V)
1.5
2.7V
1
-40 0 40 80 120
Temperature (°C)
1.2
+5V
1
5.5V A
VIN
0.8 W + VOUT
VDD (V)
0.6 2.7V B -
0.4 Offset
GND
0.2
2.5V DC
0
-40 0 40 80 120
Temperature (°C)
FIGURE 2-64: POR/BOR Trip point vs. VDD FIGURE 2-65: -3 db Gain vs. Frequency
and Temperature. Test.
floating
VA
A VW
W
IW
RBW = VW/IW
B
VB RW = (VW-VA)/IW
The device’s RAM retention voltage (VRAM) is lower 00h Volatile Wiper 0 RAM
than the POR/BOR voltage trip point (VPOR/VBOR). The 01h Volatile Wiper 1 RAM
maximum VPOR/VBOR voltage is less than 1.8V. 02h Reserved —
When VPOR/VBOR < VDD < 2.7V, the electrical perfor- 03h Reserved —
mance may not meet the data sheet specifications. In 04h Volatile TCON register RAM
this region, the device is capable of incrementing, dec-
05h Reserved RAM
rementing, reading and writing to its volatile memory if
the proper serial command is executed. 06h - 0Fh Reserved —
Legend:
R = Readable bit W = Writable bit U = Unimplemented bit, read as ‘0’
-n = Value at POR ‘1’ = Bit is set ‘0’ = Bit is cleared x = Bit is unknown
W
R AB
R S = -------------- 7-bit Device
1 1 128
(1) (01h) (01h)
RS RW
0 0
(1) (00h) (00h)
RW
Analog Mux
B
Note 1: The wiper resistance is dependent on
several factors including, wiper code,
device VDD, Terminal voltages (on A, B,
and W), and temperature.
Also for the same conditions, each tap
selection resistance has a small variation.
This RW variation has greater effects on
some specifications (such as INL) for the
smaller resistance devices (5.0 k)
compared to larger resistance devices
(100.0 k).
Wiper Setting
Default POR
Resistance
A
Resistor Network
B
FIGURE 5-2: Resistor Network Shutdown
Configuration.
SCL
Data Bit
FIGURE 6-3: Data Bit.
SDA
SCL
S 1st Bit 2nd Bit 3rd Bit 4th Bit 5th Bit 6th Bit 7th Bit 8th Bit A/A P
SDA
SCL
F/S-mode HS-mode
P
F/S-mode
Second Byte
S 0 0 0 0 0 0 0 0 A X X X X X X X 0 A P
Reserved 7-bit Commands (By I2C Specification - Philips # 9398 393 40011, Ver. 2.1 January 2000)
‘0000 011’b - Reset and write programmable part of slave address by hardware.
‘0000 010’b - Write programmable part of slave address by hardware.
‘0000 000’b - NOT Allowed
S 0 0 0 0 0 0 0 0 A X X X X X X d 0 A d d d d d d d d A P
General Call Address “7-bit Command” “0” for General Call Command
MCP45XX/MCP46XX 7-bit Commands
‘1000 00d’b - Write Next Byte (Third Byte) to Volatile Wiper 0 Register.
‘1001 00d’b - Write Next Byte (Third Byte) to Volatile Wiper 1 Register.
‘1100 00d’b - Write Next Byte (Third Byte) to TCON Register.
S 0 0 0 0 0 0 0 0 A X X X X X X X 1 A X X X X X X X X A P
Each command has two operational states. These D9 and D8 are the most significant bits for the digital
operational states are referred to as: potentiometer’s wiper setting. The 8-bit devices utilize
D8 as their MSb while the 7-bit devices utilize D7 (from
• Normal Serial Commands the data byte) as it’s MSb.
• High-Voltage Serial Commands
Note: High Voltage commands are supported COMMAND BYTE
for compatibility with nonvolatile devices
in the family. A A A A A C C D D A
D D D D 1 0 9 8
TABLE 7-1: I2C COMMANDS 3 2 1 0
Command Operates on
MCP4XXX MSbits (Data)
# of Bit Volatile/
Memory Address
Operation Mode Clocks (1) Nonvolatile
Memory Command Operation bits
00 = Write Data
Write Data Single 29 Both 01 = Increment
Continuous 18n + 11 Volatile Only 10 = Decrement
Read Data Single 29 Both 11 = Read Data
Random 48 Both FIGURE 7-1: Command Byte Format.
Continuous 18n + 11 Both
Increment Single 20 Volatile Only
Continuous 9n + 11 Volatile Only
Decrement Single 20 Volatile Only
Continuous 9n + 11 Volatile Only
Note 1: “n” indicates the number of times the
command operation is to be repeated.
Normal serial commands are those where the HVC pin
is driven to VIH or VIL. With High-Voltage Serial Com-
mands, the HVC pin is driven to VIHH. In each mode,
there are four possible commands.
Table 7-2 shows the supported commands for each
memory location.
Table 7-3 shows an overview of all the device com-
mands and their interaction with other device features.
AD AD AD AD
S 0 1 0 1 A2 A1 A0 0 A 3 2 1 0 0 0 x D8 A D7 D6 D5 D4 D3 D2 D1 D0 A P
AD AD AD AD
S 0 1 0 1 A2 A1 A0 0 A 3 2 1 0 0 0 x D8 A D7 D6 D5 D4 D3 D2 D1 D0 A
AD AD AD AD
3 2 1 0 0 0 x D8 A D7 D6 D5 D4 D3 D2 D1 D0 A
AD AD AD AD
3 2 1 0 0 0 x D8 A D7 D6 D5 D4 D3 D2 D1 D0 A P
Note: Only functions when writing the volatile wiper registers (AD3:AD0 = 00h, 01h, and 04h)
or the TCON register.
Read bit
STOP bit
Fixed Variable
Address Address Read Data bits
S 0 1 0 1 A2 A1 A0 1 A 0 0 0 0 0 0 0 D8 A1 D7 D6 D5 D4 D3 D2 D1 D0 A2 P
Note 1: Master Device is responsible for A/A signal. If an A signal occurs, the MCP45XX/46XX will
abort this transfer and release the bus.
2: The Master Device will Not Acknowledge, and the MCP45XX/46XX will release the bus so the
Master Device can generate a Stop or Repeated Start condition.
3: The MCP45XX/46XX retains the last “Device Memory Address” that it has received. This is
the MCP45XX/46XX does not “corrupt” the “Device Memory Address” after Repeated Start or
Stop conditions.
4: The Device Memory Address pointer defaults to 00h on POR and BOR conditions.
AD AD AD AD
S 0 1 0 1 A2 A1 A0 0 A 3 2 1 0 1 1 x X A Sr
0 1 0 1 A2 A1 A0 1 A 0 0 0 0 0 0 0 D8 A1 D7 D6 D5 D4 D3 D2 D1 D0 A2 P
Note 1: Master Device is responsible for A / A signal. If a A signal occurs, the MCP45XX/46XX will
abort this transfer and release the bus.
2: The Master Device will Not Acknowledge, and the MCP45XX/46XX will release the bus so the
Master Device can generate a Stop or Repeated Start condition.
3: The MCP45XX/46XX retains the last “Device Memory Address” that it has received. This is
the MCP45XX/46XX does not “corrupt” the “Device Memory Address” after Repeated Start or
Stop conditions.
Read bit
Fixed Variable
Address Address Read Data bits
S 0 1 0 1 A2 A1 A0 1 A 0 0 0 0 0 0 0 D8 A1 D7 D6 D5 D4 D3 D2 D1 D0 A1
0 0 0 0 0 0 0 D8 A1 D7 D6 D5 D4 D3 D2 D1 D0 A1
STOP bit
0 0 0 0 0 0 0 D8 A1 D7 D6 D5 D4 D3 D2 D1 D0 A2 P
Note 1: Master Device is responsible for A / A signal. If a A signal occurs, the MCP45XX/46XX will
abort this transfer and release the bus.
2: The Master Device will Not Acknowledge, and the MCP45XX/46XX will release the bus so the
Master Device can generate a Stop or Repeated Start condition.
AD AD AD AD AD AD AD AD (2)
S 0 1 0 1 A2 A1 A0 0 A 3 2 1 0 0 1 x X A 4 3 2 1 0 1 x X A P
AD AD AD AD AD AD AD AD (2)
S 0 1 0 1 A2 A1 A0 0 A 3 2 1 0 1 0 X X A 4 3 2 1 1 0 X X A P
Note1: Decrement Command (DECR) only functions when accessing the volatile wiper
registers (AD3:AD0 = 0h and 1h).
2: This command sequence does not need to terminate (using the Stop bit) and can
change to any other desired command sequence (INCR, Read, or Write).
8.1 Techniques to force the HVC pin For the serial commands, configure the GP2 pin as an
input (high impedance). The output state of the GP0 pin
to VIHH
will determine the voltage on the HVC pin (VIL or VIH).
The circuit in Figure 8-1 shows a method using the For high-voltage serial commands, force the GP0
TC1240A doubling charge pump. When the SHDN pin output pin to output a high level (VOH), and configure
is HIGH, the TC1240A is off, and the level on the HVC the GP2 pin to output the internal clock. This will form
pin is controlled by the PIC® microcontrollers (MCUs) a charge pump and increase the voltage on the HVC
IO2 pin. pin (when the system voltage is approximately 5V).
When the SHDN pin is low, the TC1240A is on and the
VOUT voltage is 2 * VDD. The resistor R1 allows the
HVC pin to go higher than the voltage such that the PIC PIC10F206 R1
MCU’s IO2 pin “clamps” at approximately VDD. GP0
MCP4XXX
TC1240A
PIC MCU VIN C+ GP2 HVC
C1
SHDN C- C1 C2
IO1 VOUT
Normal Operation
TI2CDLY = Time from one I2C command completed to completing the next I2C command.
FIGURE 8-6: Example Comparison of “Normal Operation” vs. “General Call Operation” Wiper
Updates.
MCP45X1
P0A EQUATION 8-3: dB CALCULATIONS
(RESISTANCE) - CASE 2
P0W Terminal B through RB2GND to Ground
RBW + R B2GND
P0B L = 20 log 10 --------------------------------------
R AB
FIGURE 8-7: Signal Attenuation Block Table 8-1 shows the codes that can be used for 8-bit
Diagram - Ground Referenced. digital potentiometers to implement the log attenuation.
The table shows the wiper codes for -3 dB, -2 dB and
Equation 8-1 shows the equation to calculate voltage -1 dB attenuation steps. This table also shows the
dB gain ratios for the digital potentiometer, while calculated attenuation based on the wiper code’s linear
Equation 8-2 shows the equation to calculate step. Calculated attenuation values less than the
resistance dB gain ratios. These two equations assume desired attenuation are shown with red text. At lower
that the B terminal is connected to ground. wiper code values, the attenuation may skip a step; if
If terminal B is not directly resistively connected to this occurs the next attenuation value is colored
ground, then this terminal B to ground resistance magenta to highlight that a skip occurred. For example,
(RB2GND) must be included into the calculation. in the -3 dB column the -48 dB value is highlighted
Equation 8-3 shows this equation. since the -45 dB step could not be implemented (there
are no wiper codes between 2 and 1).
0.1 µF
VDD
0.1 µF
PIC® Microcontroller
MCP453X/455X/
A
463X/465X
SCL
W
B SDA
VSS VSS
Note: In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
XXXXXXXX 4631502E
YYWW 1028
NNN 256
XXXXX 4631
XXXXXX 502
XXXXXX E/ML^^e3
YYWWNNN 028256
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
UN
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
UN
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
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7000
6000
5000
Resistance ()
4000
3000
2000 -40C
+25C
1000 +85C
+125C
0
0 32 64 96 128 160 192 224 256
Wiper Code
140 B
VB RW = (VW-VA)/IW
120
100
80
FIGURE B-5: RBW and RW Measurement.
60
40 Figure B-6 shows a block diagram of the resistor
20 network where the RAB resistor is a series of 256 RS
0 64 128 192 256
resistors. These resistors are polysilicon devices. Each
Wiper Code
wiper switch is an analog switch made up of an NMOS
and PMOS transistor. A more detailed figure of the
FIGURE B-3: Wiper Resistance (RW) vs.
wiper switch is shown in Figure B-7. The wiper
Wiper Code and Temperature resistance is influenced by the voltage on the wiper
(VDD = 5.5V, IW = 900 UA; VDD = 3.0V, switches’ nodes (VG, VW and VWCn). Temperature also
IW = 480 µA). influences the characteristics of the wiper switch, as
shown in Figure B-4.
The NMOS transistor and PMOS transistor have
-40C @ 1.8V
2020 different characteristics. These characteristics, as well
+25C @ 1.8V
+85C @ 1.8V as the wiper switch node voltages, determine the RW
resistance at each wiper code. The variation of each
Resistance ()
Nn-1
DVG 1.2
RS RW (1)
1.0
Nn-2 NMOS
VB 1.4
B 1.2
Note 1: The wiper resistance is dependent on
Wiper Voltage (V)
1.0
several factors including, wiper code,
0.8
device VDD, Terminal voltages (on A, B
and W), and temperature. 0.6
-40C
0.4
FIGURE B-6: Resistor Network Block +25C
Diagram. 0.2 +85C
+125C
0.0
The characteristics of the wiper are determined by the
0 32 64 96 128 160 192 224 256
characteristics of the wiper switch at each of the Wiper Code
resistor networks tap points. Figure B-7 shows an
example of a wiper switch. As the device operational FIGURE B-9: Wiper Voltage (VW) vs.
voltage becomes lower, the characteristics of the wiper Wiper Code (VDD = 1.8V, IW = 190 µA).
switch change due to a lower voltage on the VG signal.
Figure B-7 shows an implementation of a wiper switch.
When the transistor is turned off, the switch resistance
is in the Giga s. When the transistor is turned on, the
switch resistance is dependent on the VG, VW and
VWCn voltages. This resistance is referred to as RW.
RW (1)
VG (VDD/VSS)
“gate”
NMOS
NWC Wiper
VWCn PMOS VW
“gate”
Note 1: Wiper Resistance (RW) depends on the
voltages at the wiper switch nodes
(VG, VW and VWCn).
FIGURE B-7: Wiper Switch.
()
3.00E+09 NMOS
devices (RW = RNMOS || RPMOS). Below the threshold PMOS Theshold 60
voltage for the NMOS and PMOS devices, the 2.00E+09 Theshold
40
resistance becomes very large (Giga s). In the 1.00E+09 20
transistor’s active region, the resistance is much lower.
For these graphs, the resistances are on different 0.00E+00 0
0.0 0.6 1.2 1.8 2.4 3.0
scales. Figure B-13 and Figure B-14 only plot the VIN Voltage
NMOS and PMOS device resistance for their active
region and the resulting wiper resistance. For these FIGURE B-12: NMOS and PMOS
graphs, all resistances are on the same scale. Transistor Resistance (RNMOS, RPMOS) and
Wiper Resistance (RW) VS. VIN
RW (VDD = 1.8V).
VG (VDD/VSS)
“gate” 300
NMOS 250
VIN VOUT
PMOS
200
Resistance () RNMOS RPMOS
“gate”
150
50
3.00E+10 2500
RW RNMOS 0
NMOS and PMOS Resistance
RPMOS
2.00E+10
1500 FIGURE B-13: NMOS and PMOS
1.50E+10 Transistor Resistance (RNMOS, RPMOS) and
()
1000
1.00E+10
Wiper Resistance (RW) VS. VIN
PMOS NMOS (VDD = 3.0V).
500
5.00E+09
Theshold Theshold
0.00E+00 0 5000
0.0 0.3 0.6 0.9 1.2 1.5 1.8
VIN Voltage 4500
4000
FIGURE B-11: NMOS and PMOS 3500
Resistance ()
R1
VOUT
R2
A VA
W
VW
B
VB
Device: MCP4531: Single Nonvolatile 7-bit Potentiometer a) MCP4532-502E/XX: 5 k 8LD Device
MCP4531T: Single Nonvolatile 7-bit Potentiometer b) MCP4532-103E/XX: 10 k, 8-LD Device
(Tape and Reel) c) MCP4532-503E/XX: 50 k, 8LD Device
MCP4532: Single Nonvolatile 7-bit Rheostat d) MCP4532-104E/XX: 100 k, 8LD Device
MCP4532T: Single Nonvolatile 7-bit Rheostat e) MCP4532T-104E/XX: T/R, 100 k, 8LD Device
(Tape and Reel)
MCP4551: Single Nonvolatile 8-bit Potentiometer a) MCP4551-502E/XX: 5 k 8LD Device
MCP4551T: Single Nonvolatile 8-bit Potentiometer b) MCP4551-103E/XX: 10 k, 8-LD Device
(Tape and Reel) c) MCP4551-503E/XX: 50 k, 8LD Device
MCP4552: Single Nonvolatile 8-bit Rheostat d) MCP4551-104E/XX: 100 k, 8LD Device
MCP4552T: Single Nonvolatile 8-bit Rheostat e) MCP4551T-104E/XX: T/R, 100 k, 8LD Device
(Tape and Reel)
MCP4631: Dual Nonvolatile 7-bit Potentiometer a) MCP4552-502E/XX: 5 k 8LD Device
MCP4631T: Dual Nonvolatile 7-bit Potentiometer b) MCP4552-103E/XX: 10 k, 8-LD Device
(Tape and Reel) c) MCP4552-503E/XX: 50 k, 8LD Device
MCP4632: Dual Nonvolatile 7-bit Rheostat d) MCP4552-104E/XX: 100 k, 8LD Device
MCP4632T: Dual Nonvolatile 7-bit Rheostat e) MCP4552T-104E/XX: T/R, 100 k, 8LD Device
(Tape and Reel)
MCP4651: Dual Nonvolatile 8-bit Potentiometer a) MCP4631-502E/XX: 5 k 8LD Device
MCP4651T: Dual Nonvolatile 8-bit Potentiometer b) MCP4631-103E/XX: 10 k, 8-LD Device
(Tape and Reel) c) MCP4631-503E/XX: 50 k, 8LD Device
MCP4652: Dual Nonvolatile8-bit Rheostat d) MCP4631-104E/XX: 100 k, 8LD Device
MCP4652T: Dual Nonvolatile 8-bit Rheostat e) MCP4631T-104E/XX: T/R, 100 k, 8LD Device
(Tape and Reel)
a) MCP4632-502E/XX: 5 k 8LD Device
b) MCP4632-103E/XX: 10 k, 8-LD Device
Resistance Version: 502 = 5 k c) MCP4632-503E/XX: 50 k, 8LD Device
103 = 10 k d) MCP4632-104E/XX: 100 k, 8LD Device
503 = 50 k e) MCP4632T-104E/XX: T/R, 100 k, 8LD Device
104 = 100 k
a) MCP4651-502E/XX: 5 k 8LD Device
b) MCP4651-103E/XX: 10 k, 8-LD Device
Temperature Range: E = -40°C to +125°C c) MCP4651-503E/XX: 50 k, 8LD Device
d) MCP4651-104E/XX: 100 k, 8LD Device
e) MCP4651T-104E/XX: T/R, 100 k, 8LD Device
Package: MF = Plastic Dual Flat No-lead (3x3 DFN), 8/10-lead
ML = Plastic Quad Flat No-lead (QFN), 16-lead a) MCP4652-502E/XX: 5 k 8LD Device
MS = Plastic Micro Small Outline (MSOP), 8-lead b) MCP4652-103E/XX: 10 k, 8-LD Device
ST = Plastic Thin Shrink Small Outline (TSSOP), 14-lead c) MCP4652-503E/XX: 50 k, 8LD Device
UN = Plastic Micro Small Outline (MSOP), 10-lead d) MCP4652-104E/XX: 100 k, 8LD Device
e) MCP4652T-104E/XX: T/R, 100 k, 8LD Device
XX = MF for 8/10-lead 3x3 DFN
= ML for 16-lead QFN
= MS for 8-lead MSOP
= ST for 14-lead TSSOP
= UN for 10-lead MSOP
• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
• Microchip is willing to work with the customer who is concerned about the integrity of their code.
• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
QUALITY MANAGEMENT SYSTEM Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
CERTIFIED BY DNV Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
== ISO/TS 16949 ==
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.