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1972 Motorola Semiconductor Library First Edition Vol1
1972 Motorola Semiconductor Library First Edition Vol1
SEMICONDUCTOR
DATA LIBRARY
_ _ _ _ _ _ _ _ _ _ FIRST EDITION
prepared by
Technical I nformation Center
The information in this book has been carefully checked and is believed to be reliable; however, no responsibility
is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
devices any license under the patent rights of any manufacturer identified in this library.
Nous n'acceptons aucune responsabilite' en ce qui concerne les erreurs qui auraient pu s'introduire dans cette
a a
edition, en depit des soins minutieux apportes sa pnlParation et sa revision; nous esperons toutefois que les
renseignements fournis sont fiables. De plus, il est bien entendu que ces renseignements ne permettent pas a'
I'acheteur de dispositifs semiconducteurs d'utiliser ies brevets des fabricants mentionnes dans ce catalogue.
Die in diesem Such enthaltenen Angaben wurden sorgfiiltig uberpruft und sind nach unserer Meinung vallig
zuverlassig. Wir konnen jedoch fUr die Genauigkeit dieser Angaben keine Verantwortung ubernehmen. Daruber
hinaus wird dem Kaufer von Halbleiterelementen mit Angaben, die in dieser Sibliothek genannt werden, keine
unter die Patentrechte eines Herstellers fallende Lizenz erteilt.
First Edition
@MOTOROLA INC., 1972
"All Rights Reserved"
THE
SEMICONDUCTOR
DATA LIBRARY
One of the major problems facing workers in the Dimensioned Device Outlines - Dimensioneddrawings
electronics field is the identification and selection of of package outlines with JEDEC and Motorola cross
semiconductor devices. Type numbers assigned to the reference. (Includes leadform drawings on specific
semiconductors are of little value since they indicate packages.!
neither device parameters nor appl ications. Because it Applrcation Note Catalog - Selection guide listing
is difficult even to identify the many thousands of application note by application category. Also a brief
device type numbers, let alone evaluate their merits for summary of the available application note contents and
a particular applicati9n, engineers often limit their how to order application notes.
designs to a few well-known device types - despite To meet the requirements of a practical up-to-date
the fact that newer or more suitable devices may be reference, the Reference Volume of the Semiconductor
available. To help alleviate this problem, the Motorola Li brary wi Ii be completely updated and published twice
Semiconductor Data Library has been developed. a year, with supplementary publications quarterly.
The Motorola Semiconductor Data Library identi-
fies and characterizes all semiconductor devices with
1 N- - -, 2N- - -, and 3N- - . numbers registered with the VOLUME I
Electronics I ndustries Association at the time the
library was printed, as well as a broad line of devices This volume contains complete data sheets for
with special in·house type numbers. (It provides Motorola-manufactured devices with E lA-registered
complete data sheet specifications for a wide range of type numbers up to 1 N4999 and 2N4999. Data sheets
discrete semiconductors, and short·form specifications are in numerical sequence according to device type
for integrated circuits'! And in addition, to simplify number except for those data sheets that cover several
the selection of the most useful semiconductor type devices with differing type numbers. A numerical
numbers, it contains carefully prepared selector guides index in front of the book permits the user to quickly
with recommended devices for specific applications. locate the page n umber of the data sheet for any device
Properly used, it can be a valuable aid for the design characterized in the book.
engineer, the component engineer, and the purchasing Since most of the device type numbers in the
agent in narrowing the broad categories of potentially "below 5000" category have already been utilized by
usable components to those best suited for a specific existing product, it is expected that this book will
project. require little updating in the next few years. Accord-
ingly, this volume will be reprinted only as required by
the demand, and modifications will be made only when
COMPOSITION OF THE LIBRARY
reprinting is required..
The Semiconductor Data library is divided into
three volumes, organized as follows: VOLUME II
REFERENCE VOLUME This volume contains data sheets for all Motorola-
manufactured, EIA registered devices with type num-
The reference volume is a self-contained com- bers 1 N5000 and 2N5000 and up, as well as those
pendium of semiconductor devices and integrated with 3N- - . type numbers. I n addition, all active data
circuits information. This volume enables the user to sheets for devices with special Motorola type numbers
locate and select devices for most any application or (not registered with E IA) are included.
specific circuit. It also contains package and hardware Because this book contains the detailed data for
information as well as applications information. Once all the most recently developed semiconductors, it will
a preliminary selection of a potentially suitable device be updated through .the publication of supplements.
has been made, consult Volumes I or II for detailed Two supplements will be published during the life of
specifications for that particular device. this edition.
EIA Registered Device Index - Complete numerical
index of all E IA registered device types, with major
electrical specifications.
How to Use The Semiconductor Data Library
Non-Registered Device Index - Complete numerical
index of all in-house non-registered Motorola device The library is designed to serve several specific
types, with major electrical specifications. functions;
Microcircuits Components - Unencapsulated tran- 1. To permit quick identification (together with
sistors, diodes, passive devices, and integrated circuits major specifications) of EtA registered semicon-
for use in hybrid circuits. (I ncludes processing, ductor devices with units with special Motorola
packaging, and inspection criteria'! type numbers.
Master Selection Guides - Grouping of preferred 2. To permit quick selection of the most suitable
devices by major device categories for quick pre- devices for a specific circuit application.
selection of devices best suited for specific applications. 3. To permit quick selection of the devices that
I ncludes semiconductor devices and I Cs. best meet a given set of electrical specifications.
Military Device Listing - A complete list of Motorola 4. To provide complete characterization of a broad
devices that comply with Military Specifications. line of components, encompassing most semi-
Hardware and Packaging Information - Device mount- conductor categories, for a detailed comparison
ing hardware, heat sinks and special device packaging. of device types.
"
The following examples illustrate several ways of Known: a) I ntended circuit application for a par-
using this library. ticular device
Problem: Device Identification b) Approximate electrical specifications of
Known: Device Type Number a desired device.
I nformation Needed: Device function, applications, I nformation Needed: a) What devices are available
major specifications. for a specific circuit function?
Procedure: Consult the Master I ndex of the Reference b) What device types will best
Volume and locate the type number of the device in match a required set of electrical characteristics?
question in the alpha-numeric listing of the master
index. The information given in this index lists not only Procedure: Consult the Master Selection Guide sec-
the type of device it is, but also provides the major tion of the Reference Volume. This section contains
electrical specifications for the device. I n addition, it product categories, i.e., power transistors, zener diodes,
indicates whether or not the device is manufactured by etc., and by specific market segments, including com-
Motorola and, if not, whether Motorola can supply an munications, consumer and military. An index to the
electrically suitable equivalent. Complete data for individual selector guides is given at the beginning of
Motorola man ufactured devices can then be obtained, the section for quick access to the pertinent guides.
if required, from the other two volumes of your Semi- Complete data for Motorola manufactured devices can
conductor Data Library. then be obtained, if required, from the other two
Problem: Device Preselection volumes of your Semiconductor Data Library.
CATALOGUE DE SEMICONDUCTEURS
III
brides (ycompris processus, mise en boitier et criteres supplElmentaires, car il contient toutes les donnees de·
d'inspection.) taillees des dispositifs semiconducteurs les plus recents.
Deux supplements seront publies pendant la duree de
Guide vie de cette edition.
Les dispositifs les plus utilises y sont groupes par
Methode d'Utilisation du Catalogue de
categories principales. pour un choix rap ide des com·
Semiconducteurs
posants les mieux adaptes 'a certaines applications (y
compris dispositifs discrets et circuits integres.) Ce catalogue a pour but:
1. D'identifier rapidement, grace aux specifications
Liste des Dispositifs Mil itaires
principales, si Ie dispositif est homologue par E I A
Cette liste fournit tous les dispositifs Motorola homo· ou s'il s'agit d'un type special Motorola.
logues par les Specifications Militaires.
2. De selectionner rapidement Ie dispositif Ie mieux
Boitiers et Modes de Montage a
adapte un circuit.
Fournit les modes de montage, les radiateurs et les 3. De selectionner rapidement un dispositif en fonc·
boitiers speciaux. tion des specifications electriques.
4. De fournir les donnees completes de tout I'ensem·
Dimension des Boitiers ble des composants Motorola - donc la majorite
Dessin et dimension des boitiers homologues par des dispositifs semiconducteurs - afin de pouvoir
JEDEC et Motorola (y compris les dessins pour former com parer taus les types de dispositifs ..
les tiges.)
Exemples de methodes d'utilisation;
Catalogue de Notes d' Appl ications Question: Identifier Ie dispositif
Fournit une liste complete des notes d'applications Donnee: Type de dispositif
groupees par categories, egalement un resu me des notes Renseignements Requis: Fonction du dispositif, ap·
d'applications disponibles et la marc he asuivre pour plications et specifications
principal es.
les obtenir.
II est evident qu'afin de garder ce catalogue 'a jour, Methode: Consulter l'lndex du Volume de Reference
Ie Volume de Reference sera completement revise et et determiner Ie numero du dispositif en question parmi
publie deux fois par an, avec des additions supplemen. la liste numerique de I'index. Ce renseignement ainsi
taires publiees tous les trimestres. obtenu indique non seulement, Ie type de dispositif
mais egalement fournit les specifications electriques
VOLUME I principales de ce dispositif. De plus, Ie fabricant y
sera precise et Ie catalogue indiquera si Motorola peut
Ce volume est constitue par les specifications pour fournir les dispositifs equivalents. Les deux autres
les composants faits par Motorola avec les numeros volumes de ce catalogue vont maintenant fournir toutes
homologues par EIA jusqu'a 1N4999 et 2N4999. Ces les donnees sur les dispositifs faits par Motorola.
specifications sont ciassees par ordre numerique sauf
les specifications qui se rapportent a plusieurs types Question: Choix du Disposil if
de dispositifs. Un index numerique en premiere page Donnees:
permet'a I'utilisateur de determiner rapidemente Ie nu me· a) Application probable du circuit pour un dispositif
ro de la page pour chaque dispositif decrit dans ce connu.
catalogue.
b) Specifications'electriques approximatives du dispbsi·
II est probable que les dispositifs portant un numero tif en question.
en-dessous de 5000 necessiteront peu de mise jour a Renseignements Requis,:
puisque tous ces numeros sont deja utilises. En con·
a) Quels sont les dispositifs disponibles pour la fonc·
sequence, ce volume ne sera rllimprime que sur demande
tion precise de ce circuit?
et les modifications apparaitront uniquement lors de
cette nouvelle edition. b) Quel type de dispositif va rllpondre ades caracte·
ristiques electriques predlherminees?
VOLUME II Methode: Consulter Ie Guide dans Ie Volume de
Ce volume est constitue par toutes les specifications Reference qui est categorise par produits, c'est·a·dire
pour les dispositifs faits par Motorola, homologues par transistors de puissance, diodes zener, etc., et par mar-
EIA avec numeros 1N5000, 2N5000, etc. ainsi que ches, y compris communications, grand public, et mili·
ceux avec les numeros 3N···. De plus, les specifications taire. Ces differentes categories apparaissent en premiere
de dispositifs avec numeros speciaux de Motorola (non page pour faciliter la selection du Guide. Nous pouvons
homologues par EIA) y sont inciuses. maintenant obtenir toutes les donnees sur les disposi·
tifs faits par Motorola en utilisant les deux autres volu·
Ce catalogue sera mis a jour a I'aide d'editions mes du Catalogue de Semiconducteurs.
IV
DIE HALBLEITER DATENBIBLIOTHEK
Eines der Hauptprobleme fUr Fachleute in der Elek- hybriden Kreisen. (Prozess-, Einkapselung- und In-
tronik-Industrie besteht in der Bestimmunq und Selek- spektions-Kriterien sind inbegriffen.)
tion von Halbleitertypen. Die meisten Typenbezeich-
nungen geben wenig oder keine Auskunft uber Para- Hauptnachschlagewerk
meter oder Anwendungen von speziellen Halbleitern. Zusammenfassung in Gruppen der bevorzugten Haupt-
Viele tausend verschiedene Halbleitertypen sind heute elementkategorien fUr schnelle Vorselektion der Elemen-
erhiiltlich. Es ist fast unmoglich, auch nur einen te die am besten fur gegebene Anwendungen in Frage
geringen Prozentsatz aller Typen genau zu kennen. kommen. Dieses Dokument enhalt Halbleiterelemente
Somit bringen die meisten Ingenieure und Techniker und integrierte Kreise.
nur die bekanntesten und gebriiuchlichsten Halbleiter-
typen zur Anwendung, auch wenn neuere und bessere Mil itarelementen- Liste
Elemente zur Verfugung stehen.
Dies ist eine vollstandige Liste von Motorola Bausteinen
Um diesem Problem Abhilfe zu schaffen hat Motorola die Militarspezifikationen erfullen.
die meisten Halbleitertypen in eine Halbleitersammlung
zusammengefasst. Diese Halbleitersammlung umfasst Montagezubehor und Einkapselung Information
aile IN, 2N und 3N Typen, die durch die "Electronics
Bauelement-Montagezubehor, KU hlelemente u nd Spe-
Industries Association" registriert sind. Weiterhin sind
zial-E I ementeneinkapselung.
eine grosse Anzahl von Motorola In-Haus Typen in dieser
Sammlung zusammengefasst. Vollstandige Spezifika- Vermasste Elementen-Grundrisse
tionen einer grossen Anzahl von diskreten Halbleitern
und Kurzspezifikationen von integrierten Schaltkreisen Vermasste Zeichnungen von Gehiiusegrundrissen mit
sind vorhanden. JEDEC und Motorola GegenUberstellung. (Zeichnungen
der Anschlussformen von gegebenen Gehausen sind
Zusiitzl ich sind, zur Vereinfachung der Aufsuche der inbegriffen.)
meist gebrauchten Halbleitertypennummern, Nachschla-
getabellen mit Vorzugstypen fUr bestimmte Anwen- Awendu ngsbericht- Katalog
dungen in der Sammlung enthalten.
Nachschlaglisteder Anwendungsberichte welche in An-
Die Halbleitersammlung kann dem Entwicklungs und wendungskategorien zusammengefasst sind. Eine kurze
Komponent-Ingenieur sowie dem Einkiiufer von Halb- Zusammenfassung des I nhalts der verfugbaren Berichte
leitern gute Dienste leisten im Aufsuchen der best ist gegeben und ebenfalls wie sie bestellt werden konnen.
miiglichen Elemente fur eine bestimmte Anwendung.
Um den Anforderungen eines praktischen, auf den letz-
ten Stand gebrachten Nachschlagewerkes zu genugen
ZUSAMMENSETZUNG DER wird der Referenz-Band der Halbleiterbibliothek zwei-
HALBLEITERSAMMLUNG mal im Jahr vOllstiindig uberarbeitet und publiziert.
Zusiitzl iche Veriiffentl ichungen werden vierteljiihrl ich
Die Halbleitersammlung besteht aus drei Teilen, die herausgegeben.
folgendermassen zusammengefasst sind:
BAND I
REFERENZ-BAND
Dieser Band enthalt vOllstandige Datenbliltter der von
Der Referenz-Band besteht aus einer ubersichtlichen Motorola fabrizierten Elemente mit EIA registrierten
Zusammenfassung von Halbleitern und integrierten Nummern bis zu 1 N4999 und 2N4999. Die Daten-
Schaltungen. Mit Hilfe dieses Referenzbandes lassen blatter sind in numerischer Ordnung gemass der Bauele-
sich Halbleiter und integrierte Schaltungen fur spezielle mente-Typennummer eingereiht. Ausnahme sind solche
Anwendungszwecke leicht auffinden. Gehiiuse-, An- Datenbliitter welche spezielle Elemente mit wechsel nden
wendungs- und Montagezubehorinformation sind eben- Typennummern behandeln. Ein numerisches Verzeich-
so im Referenzband angegeben. Nach der Wahl eines nis am anfang des Bandes erlaubt dem Benutzer ein
Halbleiters oder einer integrierten Schaltung aus dem schnellesAuffinden der Datenblatter fur aile Elemente,
Referenzband kann Band I oder Band II fUr die speziel- die im Buch aufgefUhrt sind.
len Daten zur Hilfe gezogen werden.
Weil die meisten Elemente- Typennummern in der Kate-
gorie bis 5000 schon von bestehenden Produkten auf-
EIA Registriertes Halbleiter-Verzeichnis
gebraucht wurden, ist erwartet, dass dieser Band in
VOllstandiges numerisches Verzeichnis aller EIAregi- den niichsten Jahren wenig Ueberarbeitung verlangt.
strierter Halbleiter Typen, mit den hauptsachlichen elek- Dementsprechend wird dieses Buch nur neu gedruckt
trischen Spezifikationen. wenn die Nachfrage es verlangt und Modifikationen
werden nur bei einer Neuauflage vorgenommen.
Nicht Registriertes Halbleiter-Verzeichnis
Vollstandiges numerisches Verzeichnis aller nicht regi- BAND II
strierter I n-Haus Motorola Halbleiter Typen, mit den Dieser Band enthalt Datenblatter der von Motorola
hauptsachl ichen elektrischen Spezifikationen. hergestellten EIA registrierten Elemente mit der Typen-
nummer 1 N5000 und 2N5000 und aufwiirts und eben-
Mi kroschaltkreis- Komponenten falls solche mit den 3N- - Typennummern. Aile aktiven
Nicht eingekapselte Transistoren, Dioden, passive Ele- Datenblatter fUr Elemente mit speziellen Motorola
mente und integrierte Schaltkreise fur den Gebrauch in Typennummern (nicht EIA registriert) sind zusatzlich
v
hier einbezogen. Information, die in diesem Verzeichnis gegeben ist,
Weil dieser Band die detaillierten Dilten fur aile der bestehtnicht nur aus dem Elemententyp sondern auch
erst kUrzlich entwickelten Halbleiter enthilt, wird er die elektrischen Hauptspezifikationen sind gegeben.
durch Publ ikationen von Zusatzbuchern auf den letzten Zusatzlich ist angegeben ob das Element von Motorola
Stand gebracht. Zwei Zusatzbucher werden wiihrend hergestelltwird und, im Fall dass dies verneint wird, ob
der"Lebensdauer'~dieser Ausgabeveroffentl icht werden. Motorola ein elekti"isch vergleichbares Bauelement lie-
fern kann. Wenn benotigt, konnen die v611stiindigen
Wie wird "Die Halbleiter Datenbibliothek" gebraucht Daten der von Motorola hergestellten Halbleiter von
Die Bibl iothek ist zusammengestellt worden um mehrere den zwei anderen Banden der Halbleiter Bibliothek
spezielle Funktionen zu erfullen: erhalten werden.
1. Erlaubtschnelle Bestimmung (zusammen mit Haupt- Problem: Elementen-Vorbestimmung
spezifikationenl von·E IA registrierten Halbleitern Bekannt:
und Bausteinen mit speziellen Motorola Typennum- al Vorgesehene Schaltkreisanwendung fur ein bestimm-
mern. tes Element.
2. Erlaubt schnelle Selektion der best geeignetsten bl Ungefiihre elektrische Spezifikationen eines ge-
Elemente fUr eine bestirrimte Schaltungsanwendung. wUnschten Typs.
3. Erlaubt schnelle Selektion von Elementen welche Benotigte Information:
am besten gegebene elektrischeSpezifikationen er- al Welche Elemente sind fyr eine bestirnmte Kreis-
fUlien. fu nk tion verfU gbar?
4. Liefert vollstandige Charakterisation einer breiten bl Welche Elementtypen erfLilien am besten die erfor-
Komponentenlinie, welche die meisten Halbleiter· derl ichen elek trischen Charakteristi ken?
Kategorien einschliesst. Erlaubt einen detaillierten
Vergleich der Elementtypen.
Die nachfolgenden Beispiele veranschaul ichen mehrere Vorgang: Das Hauptnachschlagwerk des Referenz-
Wege um diese Bibliothek zu gebrauchen. ban des wird aufgeschlagen. Dieses Kapitel enthl:ilt
Produktkategorien, z. B. Leistungstransistoren, Zener-
Problem: Elementen·Bestimmung
dioden etc. eingereiht in bestimmte Marktsegmente, ein-
Bekannt: Elemente-Typennummer
schliesslich Fernmeldewesen, Verbraucherindustrie und
Benotigte Information: Elementefunktion,
Militarbereich. Ein "Index" zu den einzelnen "Auswahl-
Anwendung, Haupt-
FUhrern" ist amanfang dieses Kapitels gegeben, was
spezifikationen
zum schnellen Auffinden der zutreffenden "Fuhrer"
Vorgang: 1m Hauptverzeichnis des Referenzbandes hilft. Volistandige Daten der von Motorola hergestell-
sind die Typennummern des zu untersuchenden Ele- ten Elemente kennen, wenn benotigt, von den zwei
mentes in der alphanumerischen Liste aufgefuhrt. Die anderen Banden entnommen werden.
VI
NUMERICAL INDEX
~
1N721 1N942,A,B
1N722 1N943,A,B 1 N1317
1N723 1N944,A,B 1 N 1318
1N724 1N945,A,B 1 N 1319
1N725 1N946,A,B 1-22 1N1320
1N726 1N957 1-26 1 N1321
1N727 1N958 1N1322
1N728 1N959 1N1323
1N729 1N960 1N1324
1N730 1N961 1N1325
1N731 1N962 1N1326
1N732 1N963 1N1327
1N733 1N964 1 N 1351
1N734 1N965 1 N 1352
1N735 1N966 1 N 1353
1N736 1N967 1N1354
1N737 1N968 1N1355
1N738 1N969 1N1356
1N739 1N970 1N1357
1N740 1N971 1N135.8
1N741 1N972 1N1359
1N742 1N973 1N1360
1N743 1N974 1N1361
1N744 1N975 1N1362
1N745 1N976 1N1363
1N746,A 1N977 1N1364
1N747,A 1N978 1N1365
1N748,A 1N979 1N1366
1N749,A 1N980 1N1367
1N750,A 1N981 1N1368
1N751,A 1N982 1N1369
1N752,A 1N983 1N1370
1N753,A 1N984 1 N 1371
1N754,A 1N985 1 N 1372
1N755,A 1N986 1N 1373
1N756,A 1N987 1N1374 It
1N757,A 1-9 1N988 1-26 1N1375 1-30
vii
NUMERICAL INDEX (continued)
1-32
1-35
1 N2843
1 N2844
1 N2845
1 N2846
1 N2970
1 N2971
1 N2972
1-40
1-43
viii
NUMERICAL INDEX (continued)
i
1N2985 1N3157,A 1N3583,A,B 1-34
1N2986 1 N3189 1N3649 1-55
1N2987 1 N3190 1N3650
1N2988 1N3191 1-45 1N3659
1N2989
1N2990
1N2991
1N2992
1N2993
1N3208
1N3209
1N3210
1N3211
1 N3212
1-48
+
1-48
1N3660
1N3661
1N3662
1N3663
1N3675
t
1-55
1-57
1N2994 1N3213 1-49 1N3676
1N2995 1N3214 1N3677
1N2996 1N3282 1N3678
1N2997
1N2998
1N2999
1N3000
1N3001
1N3283
1N3284
1N3285
1N3286
1N3305
t
1-49
1-40
1N3679
1N3680
1 N3681
1N3682
1N3683
1N3002 1N3306 1N3684
1N3003 1 N3307 1N3685
1N3004 1N3308 1N3686
1N3005 1N3309 1N3687
1N3006 1N3310 1N3688
1N3007 1 N3311 1N3689
1N3008 1 N3312 1N3690
1N3009 1N3313 1N3691
1N3010 1N3314 1N3692
1 N3011 1N3315 1N3693
1N3012 1N3316 1N3694
1N3013 1N3317 1N3695
1N3014 1N3318 1N3696
1N3015 1-43 1N3319 1N3697
1N3016 1-59 1N3320 1N3698
1 N3017 1N3321 1N3699
1 N3018 1N3322 1N3700
1N3019 1N3323 1N3701
1N3020 1N3324 1N3702
1N3021 1N3325 1N3703 1-57
1N3022 1N3326 1N3785 1-58
1N3023 1N3327 1N3786
1N3024 1N3328 1N3787
1N3025 1N3329 1 N3788
1N3026 1N3330 1N3789
1N3027 1N3331 1N3790
1N3028 1N3332 1N3791
1N3029 1N3333 1N3792
1N3030 1N3334 1N3793
1N3031 1N3335 1N3794
1N3032 1N3336 1 N3795
1N3033 1N3337 1N3796
1N3034 1N3338 1 N3797
1N3035 1N3339 1 N3798
1N3036 1N3340 1 N3799
lN3037 1N3341 1N3800
1N3038 1N3342 1N3801
1N3039 1N3343 1N3802
1N3040 1N3344 1N3803
1N3041 1N3345 1N3804
1N3042 1N3346 1N3805
1N3043 1N3347 lN3806
1N3044 1N3348 1 N3807
1N3045 1N3349 1N3808
1N3046 1N3350 1-40 1N3809
1N3047 1N3491 1-51 1 N3810
1N3048 1N3492 1 N3811
1N3049 1N3493 1N3812
1N3050
1N3051 1-59
1N3494
1N3495 +
1-51
1N3813
1 N3814
1N3154,A 1-45 1N3580,A,B 1-34 1N3815
1N3155,A 1-45 1N3581,A,B 1-34 1N3816 1-58
ix
NUMERICAL INDEX (continued)
DEVICE
lN3817
1 N3818
1 N3819
lN3820
,
PAGE
1-58
1-58
DEVICE
lN4078,A
lN4079,A
lN4080,A
lN4081,A
PAGE
1-5
DEVICE
lN4569
lN4570
lN4571
lN4572
PAGE
1-101
lN3821,A
lN3822,A
lN3823,A
lN3824,A
lN3825,A
1-59 lN4082,A
lN4083,A
lN4084,A
lN4085,A
lN4099
1
1-5
1-94
lN4573
lN4574
lN4575
lN4576
lN4577
lN3826,A 1 N4100 lN4578
lN3827,A 1 N4101 lN4579
lN3828,A lN4102 lN4580
lN3829,A lN4103 lN4581
lN3830,A 1-59 lN4104 lN4582
lN3879 1-65 lN4105 lN4583
~
lN3880 1 N4106 lN4584 1-101
lN3881 lN4107 lN4719 1-103
lN3882 lN4108 lN4720
lN3883 1-65 lN4109 lN4721
lN3889 1-71 lN4110 lN4722
~ 1
lN3890 1 N4111 lN4723
lN3891 lN4112 lN4724
lN3892 lN4113 lN4725 1-103
lN3893 1-71 lN4114 lN4728 1-105
lN3899 1-77 lN4115 lN4729
~
lN3900 1 N4116 lN4730
lN3901 lN4117 lN4731
lN3902 lN4118 lN4732
lN3903 1-77 lN4119 lN4733
lN3909 1-83 lN4120 lN4734
~
lN3910 lN4121 lN4735
1 N3911 lN4122 lN4736
lN3912 lN4123 lN4737
lN3913 1-83 lN4124 lN4738
lN3993 1-89 lN4125 lN4739
lN3994 lN4126 lN4740
lN3995 lN4127 1 N4741
lN3996 lN4128 lN4742
lN3997 lN4743
1
lN4129
lN3998 lN4130 lN4744
lN3999 1 N4131 lN4745
lN4000 1-89 lN4132 lN4746
lN4001 1-90 lN4133 lN4747
lN4002 lN4134 lN4748
lN4003
lN4004
lN4005
lN4006
lN4007
lN4057,A
!
1-90
1-5
lN4135
lN4370,A
lN4371,A
lN4372,A
lN4387
lN4388
1-94
1-9
1-9
1-9
1-98
1-99
lN4749
lN4750
lN4751
lN4752
lN4753
lN4754
lN4058,A lN4549 1-40 lN4755
lN4059,A lN4550 lN4756
lN4060,A lN4551 lN4757
lN4061,A lN4552 lN4758
lN4062,A lN4553 lN4759
lN4063,A lN4554 lN4760
lN4064,A lN4555 1 N4761
lN4065,A lN4556 lN4762
lN4066,A lN4557 lN4763
lN4067,A lN4558 lN4764 1-105
lN4068,A lN4559 lN4765 1-101
lN4069,A lN4560 lN4766
lN4070,A lN4561 lN4767
, I
lN4071,A lN4562 lN4768
lN4072,A lN4563 lN4769
lN4073,A lN4564 1-40 lN4770
lN4074,A lN4565 1-101 lN4771
lN4075,A lN4566 lN4772
lN4076,A lN4567 lN4773
lN4077,A 1-5 lN4568 1-101 lN4774 1-101
x
NUMERICAL INDEX (continued)
j
1N4778 2N351A 2-20 2N721 2-83
lN4779 2N375 2-22 2N722 2-85
1N4780 2N376A 2-25 2N726 2-87
1N4781 2N378 2-25 2N727 2-87
1N4782 2N379 2-25 2N731 2-89
1N4783 2N380 2-25 2N735 2-90
1N4784 1-101 2N381 2-27 2N736 2-90
1N4896,A 1-110 2N282 2-27 2N739 2-90
1N4897,A 2N383 2-27 2N740 2-90
1N4898,A 2N398,A 2-29 2N741,A 2-92
1 N4899,A 2N404 2-31 2N743 2-94
1N4900,A 2N404A 2-31 2N744 2-96
1N4901,A 2N441 2-33 2N753 2-69
1N4902,A 2N442 2-33 2N827 2-98
1N4903,A 2N443 2-33 2N828 2-100
1N4904,A 2N456A 2-36 2N828A 2-102
1N4905,A 2N457A 2-36 2N829 2-102
~
1N4934
lN4935 2N669 2-6 2N972
1N4936
lN4937
1N4997
1N4998
1-111
1-103
1-103
2N681
2N682
2N683
2N684
2-58 2N973
2N974
2N975
2N978
1
2-137
2-140
lN4999 1-103 2N685 2N985 2-142
2N109
2N173
2N174
2N176
2N178
2-11
2-3
2-3
2-6
2-8
2N686
2N687
2N688
2N689
2N696
1
2-58
2-61
2N995
2N996
2N998
2N1008,A,B
2N 1 011
2-143
2-144
2-146
2-148
2-149
2N242
2N277
2N278
2-10
2-11
2-11
2N697
2N699
2N700,A
2-61
2-62
2-64
2N 1 021
2N1022
2N1038
,
2-150
2-150
2-153
,
2N297A 2-14 2N702 2-66 2N1039
2N307,A 2-10 2N703 2-66 2N1040
2N319 2-16 2N705 2-67 2N 1041 2-153
2N320 2-16 2N706,A,B 2-69 2Nl042 2-155
2N321 2-16 2N707,A 2-71 2N1043
2N322 2-17 2N708 2-73 2N1044
2N323 2-17 2N711,A,B 2-74 2N1045 2-155
xi
NUMERICAL INDEX (continued)
~
2N2142,A
2Nl163,A 2N1597 2N2143,A
~
2Nl164,A 2N1598 2N2144,A
2Nl165,A 2N1599 2-205 2N2145,A
2Nl166,A 2N1613 2-77 2N2146,A 2-243
2Nl167,A 2-169 2Nl.651 2-207 2N2152 2-247
2N 1175 2-173 2N1652 2-207
~
2N2153
2N 1185 2N1653 2-207 2N2154
2Nl186
2N 1187
2N 1188
~
2-173
2N1692
2N1693
2N1705
2-202
2"202
2-209
2N2156
2N2157
2N2158 2-247
2N 1189
2Nl190
2N 1191
2Nl192 ,
2-176
2-176
2-178
2N1706
2N1707
2N 1708
2N1711
2-209
2-209
2-211
2-77
2N2171
2N2192,A,B
2N2193,A,B
2N2194,A,B
2-27
2-251
+
2Nl193
2N 1194
2N 1195
2N1204,A
2N1358,A
2N1359
2N1360
2-178
2-164
2-180
2-3
2-22
2Nl724
2N1725
2N1742
2N 1751
2N1842
2N1842A
2N1843
2-213
2-213
2-41
2-216
2-218
2-221
2-218
2N2195,A,B
2N2212
2N2218,A
2N2219,A
2N2221,A
2N2222,A
,
2-251
2-253
2-255
2-255
2N2223,A 2-236
2N1362
2N1363
2N1364
2N1365
2N1408
2N1412,A
2N1413
t
2-22
2-185
2-186
2-189
2N1843A
2N1844
2N1844A
2N1845
2N1845A
2N1846
2N1846A
2-221
2-218
2-221
2-218
2-221
2-218
2-221
2N2224
2N2242
2N2256
2N2257
2N2258
2N2259
2N2273
,
2-262
2-264
2-266
2-266
2-269
2N1414 2-189 2N1847 2-218 2N2285 2-207
2N1415 2-189 2N1847A 2-221 2N2286 2-207
2N1420 2-77 2N1848 2-218 2N2287 2-207
2N1494,A 2-180 2N1848A 2-221 2N2288 2-273
2N1495 2-180 2N1849 2-218 2N2289 2-273
2N1496 2-180 2N1849A 2-221 2N2290 2-273
2N1529,A 2-191 2N1850 2-218 2N2291 2-275
2N1530,A 2N1850A 2-221 2N2292 2-275
2N 1531,A 2N1893 2-224 2N2293 2-275
2N1532,A 2N1924 2-226 2N2303 2-85
2N1533 2N1925 2-226 2N2322 2-277
,
2N1534,A 2N1926 2-226 2N2323
2N1535,A
2N1536,A
2N1537,A r
2N1959
2N1970
2N1980
2-228
2-230
2N2324
2N2325
2N2326
~
2-277
2N1538 2-191 2N1981 2N2330 2-279
2N 1539,A 2-195 2N1982 2-230 2N2331 2-279
2N1540,A 2N1983 2-231 2N2357 2-282
2N1541,A 2N1984 2-231 2N2358 2-282
2N1542,A 2N1990 2-233 2N2359 2-282
2N1543 2N1991 2-161 2N2368 2-284
2N1544,A 2N2042 2-234 2N2369 2-286
2N1545,A 2N2043 2-234 2N2369A 2-290
2N1546,A 2N2060,A 2-236 2N2381 2-292
2N1547,A 2N2075,A 2-239 2N2382 2-292
2N1548 2-195 2N2076,A 2N2405 2-224
2N1549,A 2-198 2N2077,A 2N2410 2-296
~
2N1550,A 2N2078,A 2N2415 2-298
2N1551,A
2N1552,A
2N1553,A
2N1554,A 2-198
2N2079,A
2N2080,A
2N2081,A
2N2082,A
1
2-239
2N2416
2N2453,A
2N2476
2N2477
2-298
2-300
2-302
2-302
xii
NUMERICAL INDEX (continued)
,
2N2481 2-304 2N3896 2-360 2N3120 2-427
2N2490 2-308 2N3897 2-360 2N3121 2-427
2N2491 2N2903.A 2-362 2N3127 2-429
2N2492
2N2493
+
2-308
2N2904.A
2N2905,A
2-364 2N3133
2N3134
2-433
2N2501
2N2526
2-309
2-312
2N2906,A
2N2907.A
+
2-364
2N3135
2N3136 2-433
2N2527 2-312 2N2912 2-370 2N3137 2-435
2N2528 2-312 2N2913 2-372 2N3209 2-437
2N2537 2-315 2N2914 2N3210 2-439
2N2538 2N2915 2N3211 4-441
2N2539 2N2916 2N3227 2-286
1
2N2540 2N2917 2N3232 2-443
2N2552
2N2553
2N2554
2N2555
2N2556
1
2-153
2N2918
2N2919
2N2920
2N2927
2-372
2-328
2-374
2N3235
2N3244
2N3245
2N3248
2-443
2-445
2-445
2-449
l
2N2929 2N3249 2-449
2N2557 2N2944 2-376 2N3250,A 2-453
2N2558 2N2945 2-376 2N3251,A 2-453
2N2559 2-153 2N2946 2-376 2N3252 2-459
2N2560 2-155 2N2947 2-377 2N3253 2-459
2N2561 2N2948 2-377 2N3279 2-464
2N2562 2N2949 2-380 2N3280 2-464
2N2563 2N2950 2-380 2N3281 2-464
1
2N2564 2N2951 2-382 2N3282 2-464
2N2565 2N2952 2-382 2N3283 2-466
~
2N2566 2N2955 2-385 2N3284
2N2567 2-155 2N2956 2-385 2N3285
2N2573 2-317 2N2957 2-385 2N3286 2-466
2N2574 2N2958 2-391 2N3287 2-469
2N2575 2N2959 2-391 2N3288
t
2N2576
2N2577
2N2578
2N2579
l
2-317
2N2972
2N2973
2N2974
2N2975
2-372 2N3289
2N3290
2N3291
2N3292
2-469
2-471
!
2N3295 2-473
,
2N2641 2N2979 2-372 2N3296 2-476
2N2642 2N3009 2-393 2N3297 2-479
2N2643 2N3010 2-395 2N3298 2-482
2N2644 2-322 2N3011 2-397 2N3299 2-484
2N2646 2-324 2N3012 2-399 2N3300
2N2647 2-324 2N3013 2-393 2N3301
2N2652,A 2-326 2N3014 2-393 2N3302 2-484
2N2696 2-328 2N3015 2-401 2N3303 2-486
2N2710 2-330 2N3019 2-403 2N3304 2-488
2N2720 2-332 2N3020 .2-403 2N3307 2-490
2N2721 2-332 2N3021 2-405 2N3308 2-490
2N2722 2-334 2N3022 2N3311 2-492
~ ~
2N2723 2-336 2N3023 2N3312
2N2724 2-336 2N3024 2N3313
2N2725 2-336 2N3025 2N3314
2N2728 2-338 2N3026 2-405 2N3315
2N2785 2-340 2N3043 2-410 2N3316 2-492
2N2800 2-342 2N3044 2N3323 2-495
2N2801
2N2832
2N2833
2N2834
2N2837
2N2838
2-342
2-344
2-344
2-344
2-242
2-242
2N3045
2N3046
2N3047
2N3048
2N3053
2N3054A
!
2-410
2-412
2-413
2N3324
2N3325
2N3330
2N3375
2N3425
2N3427
2-495
2-495
2-498
2-500
2-504
2-506
2N2845 2-350 2N3055 2-417 2N3428 2-506
2N2846 2-350 2N3072 2-421 2N3439 2-509
2N2847 2-350 2N3074 2-421 2N3440 2-509
2N2848 2-350 2N3081 2-423 2N3444 2-459
2N2857 2-352 2N3114 2-425 2N3445 2-513
2N2894 2-358 2N3115 2-391 2N3446 2-513
xiii
NUMERICAL INDEX (continued)
!
2N3994A 2-695
2N3489 2N3792 2-614 2N4012 2-697
2N3490 2N3796 2-619 2N4015 2-699
2N3491 2N3797 2-619 2N4016 2-699
2N3492 2-520 2N3798,A 2-623 2N4048 2-701
~
2N3494 2-523 2N3799,A 2-623 2N4049
,
2N3495 2-523 2N3800 2-627 2N4050
2N3496 2-523 2N3801 2N4051
2N3497 2-523 2N3802 2N4052
2N3498 2-524 2N3803 2N4053 2-701
2N3499 2N3804 2N4066 2-705
2N3500 2N3804A 2N4067 2-705
2N3501 2-524 2N3805 2N4072 2-707
2N3506 2-531 2N3805A 2N4073 2-707
2N3507 2-531 2N3806 2N4091 2-709
2N3508 2-533 2N3807 2N4092 2-709
2N3509 2-533 2N3808 2N4093 2-709
2N3510 2-536 2N3809 2N4123 2-711
2N3511 2-536 2N3810 2N4124 2-711
2N3544 2-539 2N3810A 2N4125 2-715
2N3546 2-541 2N3811 2N4126 2-715
2N3553 2-500 211!3811A 2N4130 2-719
2N3611 2-545 2N3812 2N4151 2-721
,
2N3612 2N3813 2N4152
2N3613
2N3614 +
2-545
2N3814
2N3815
2N4153
2N4154
2N3615 2-548 2N3816 2N4155
2N3616 2N3816A 2N4156
2N3617 2N3817 2N4157
2N3618 2-548 2N3817A 2-627 2N4158
2N3632 2-500 2N3818 2-631 2N4159
2N3634 2-552 2N3821 2-634 2N4160
2N3635 2N3822 2-634 2N4161
2N3636
2N3637 +
2-552
2N3823
2N3824
2-636
2-634
2N4162
2N4163
,
2N3647 2-536 2N3838 2-638 2N4164
2N3648 2-536 2N3839 2-352 2N4165
2N3712 2-558 2N3866,A 2-640 2N4166
2N3713 2-560 2N3870 2-645 2N4167
2N3714 2N3871 2N4168
2N3715
+ 2N3872 2N4169
,
2N3716 2-560 2N3873 2-645 2N4170
2N3719 2-564 2N3883 2-647 2N4171
2N3720 2-564 2N3896 2-645 2N4172
,
2N3726 2-568 2N3897 2N4173
2N3727 2-568 2N3898 2N4174
2N3733 2-570 2N3899 2-645 2N4175
2N3734 2-572 2N3902 2-651 2N4176
2N3735 2N3903 2-655 2N4177
2N3736 2N3904 2-655 2N4178
2N3737 2-572 2N3905 2-660 2N4179
,
2N3738 2-578 2N3906 2-660 2N4180
2N3739 2-578 2N3909,A 2-665 2N4181
2N3740,A 2-582 2N3924 2-667 2N4182
2N3741,A 2-582 2N3925 2N4183
2N3742 2-587 2N3926 2N4184
2N3743 2-591 2N3927 2-667 2N4185
2N3762 2-595 2N3946 2-673 2N4186
2N3763 2N3947 2-673 2N4187
2N3764
2N3765
+
2-595
2N3948
2N3950
2-679
2-683
2N4188
2N4189
2N3766 2-601 2N3959 2-687 2N4190
2N3767 2-601 2N3960 2-687 2N4191 2-721
xiv
NUMERICAL INDEX (continued)
,
2N4231 2-743 2N4404 2-802 2N4925 2-868
2N4232 2-743 2N4405 2.802 2N4926 2-869
2N4233 2-743 2N4406 2-808 2N4927 2-869
2N4234 2-746 2N4407 2.808 2N4928 2-871
2N4235 2-746 2N4409 2-812 2N4929
2N4236 2-746 2N4410 2-812 2N4930
2N4237 2-751 2N4416 2-814 2N4931 2-871
2N4238
2N4239
2N4260
2N4261
2N4264
2N4265
2N4276
2-751
2-751
2-755
2-755
2-759
2-759
2-764
2N4427
2N4428
2N4441
2N4442
2N4443
2N4444
2N4851
,
2.816
2-818
2.820
2-820
2.824
2N4937
2N4938
2N4939
2N4940
2N4941
2N4942
2N4948
2.873
~
2-873
2-875
2N4277 2N4852 2-824 2N4949 2-875
2N4278 2N4853 2.824 2N4957 2-877
2N4279 2N4854 2-828 2N4958 2-877
2N4280
2N4281
1 2N4855
2N4856,A
2.828
2-830
2N4959
2N4974
2-877
2-885
~
2N4282 2N4857,A 2N4975 2.885
2N4283 2-764 2N4858,A 2N4993 2-887
2N4342 2-768 2N4859,A
2N4351 2-770 2N4860,A
2N4352 2-774 2N4861,A 2.830
2N4360 2-778 2N4870 2.832
2N4361 2-780 2N4871 2-832
2N4362 2-780 2N4877 2-836
xv
xvi
1N••• JEDEC REGISTERED
DEVICE SPECIFICATIONS
1-1
1-2
lN248B Ie thru lN250B, C
lN1191 thru lN1198
lN1195A thru lNl198A
1N3213,.1 N3214
MAXIMUM RATINGS
1-3
1N248B,C thru 1N250B,C (continued)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
2
I
o
1
0.4 0.8 1.2 1.6 2.0
Te. MAXIMUM CASE TEMPERATURE (OC) V,. INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1-4
lN429
Temperature compensated zener reference diodes de-
1 N1530 series signed for reference sources utilizing an oxide-passivated
junction for long-term voltage stability, high uniformity
and reliable operation.
N1735 series
1
lN4057 series
CASE 41
CASE 57
*The devices are designed for operation at the specified IZT. Operation above or below
this current is not recommended, since the temperature coefficient is no longer valid.
See Note 2 and Figure 4.
MECHANICAL CHARACTERISTICS
Discrete glass package devices encapsulated in a
Case: transfer molded plastic package
Polarity: Indicated by diode symbol except 1N429, 1N1530, 1N1530A where cathode
indicated by polarity dot of contrasting color
Weight: Varies according to device
0.5 grams (min)
12 grams (max)
Finish: All external surfaces corrosion resistant and leads readily solderable.
1-5
1N429/1 N1530/1 N1735/ 1N4057 (continued)
Zener
Voltage±5% Temperature ",vz@ IZT ",Vz
ZZT PO·
Coefficient (+25 to +1 DOOC) (-55 to + 250 C)
Vz @ IZT Ohms %/OC TA = 250 C
Volts Volts
TYPE CASE Volts mA (Note 3) (Note 2) (Note 2) (Note 2) W
1- 6
1N429/ 1 N 1530/1 N 1735/1 N4057 (continued)
TABLE 2 - ELECTRICAL CHARACTERISTICS (IZT = 7.5 rnA, TA = 250 C unless otherwise noted)
TH}=I.
Ii
i
Dl!9
0.200
DIA
I II
I,Q~
, 'i
I 0370
~~D'A
1.062
'KG A , C D
~
MAX MAX 0.002 MIN
41-' 1.00 0.500 0.032 1.25
'</~~HR[E ')' LEADS ~~ DIA
41·2
41-3
0.500
1.030
0.375
0.378
0.032
0.032
1.25
1.25
~---j r---
41 ·4 1.220 0.641 0.032 1.75 1 ~- ~~g
1,.25
1(Q!5 41-5 0.655 0.641 0. 032
Q0055 41·6
41-7
0.520
1.000
4'-8 0.520
41-9 0.780
41 10 1,155
0.275
0.375
0.260
0.260
0.323
002Ir 25
0.032 1.25
0.030 1.00
0.030. 1.00
0.030 1.00
frqb
",8~~
02TI LNOTCONNECTED
1-7
1N42911 N153011 N173511 N4057 (continued)
Temperature compensated reference diodes are made possible by changes in zener current. These variations can be minimized by driv-
taking' advantage of the differing thermal characteristics of forward ing the device from a constant current source.
and reverse biased silicon PN junctions. A forward biased junction NOTE 2 - Voltage Variation (a Vz) and Temperature Coefficient
has a negative temperature cqefficient of approximately 2.0 milli-
volts/DC. Reverse biased junctions above 5.0 volts have a positive All reference diodes are characteri~ed by the "box" method.
temperature coefficient and therefore it is possible by judicious sel- This method provides for a guaranteed maximum voltage variation
ection of combinations of forward and reverse biased junctions to (6, V Z in mY) over a specified temperature range _at the specified
IZT verifie,d by tests at several points within the range. (Maximum
obtain a device which shows a very low temperature coefficient due
voltage v~riations over the specified temper,ature ranges are given in
to cancellati'on. Because of the differing impedance versus tempera- Tables 1 and 2.) The design engineer now has a number (without
ture characteristics of the junctions involved, optimum temperature any calculations) telling him the stability of the voltage over the
stability is obtained by operating in the zener current range at which temperature range of interest thus giving him the maximum flexibil-
the temperature coefficient is a minimum (Figure 4) ity as well as economy in selecting the temperature stability re-
Further information, including a method of effective impedance quired. The referenced military specifications use this approach to
cancellation in a bridge circuit for ,ultra-stable reference supplies, is characterize these devices.
contained in the Zener Diode Handbook. The handbook, containing Since reference diodes have a non-linear voltage-temperature re-
valuable theory, design, and application information, i.s available lationship (illustrated in exploded view, Figure 4) the temperature
from your distributor. coefficients in %/oC are tabulated primarily for reference purposes
and are guaranteed only at the end points of the temperature range.
NOTE 1 - Voltage-Current Characteristics
Figure 4 shows the voltage-current characteristics of a typical NOTE 3 - Zener I mpedance Derivation
temperature compensated unit at thre~ different temperatures. The
The dynamic zener impedance, ZZT, is derived from the 60 Hz
exploded view illustrates the cross-over area (optimum temperature ac voltage which results when an ac current with an rms value equal
stability point). the non-linearity of the temperature-voltage relation- to 10% of the dc zener current. IZT. is superimposed on IZT. A
ship. and the maximum voltage variation (~Vz) for the three temp- cathode-ray tube curve trace test on a sample basis is used to en-
eratures shown. sure, that each zener characteristic has a sharp and stable knee re-
Because of device impedance, the reference voltage will vary with gion.
...Z
w
a:
~VZ(max) @ IZT-
a:
:::l
()
a:
w
z
W
N
N
1-8
1N702 thru 1N745 (ZENER DIODES)
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
D C Power Dissipation: 400 Milliwatts at 50°C Ambient (Derate 3.2 mW;oC
Above 50°C Ambient)
TOLERANCE DESIGNATIONS
The type numbers shown have tolerance designations as follows:
IN4370 series: ±10%, suffix A for ±5% units.
IN746 series: ±10%, suffix A for ±5% units.
IN749 4.3 20 22 8, 2 30
IN750 4.7 20 19 7, 2 30
IN7,1 '.1 20 17 70 I 20
IN7,2 ,.6 20 II 6, I 20
IN7,3
IN7>4
6.2
6.8
20
20 ,
7 60
5>
0.1
0.1
20
20
POLARITY: Cathode End. Indicated by Color Band, Will Be Positive When Operate
Operated I n The Zener Region.
1-9
1N746 thru 1N759 (continued)
To design·ate units With zener vo"itages ·other than voitage . (Vz) and· test voltage for leakage current will
those listed, the Motorola type number should be conform to the characteristics of the next higher
modified as shown below. Unless otherwise specified, voltage type shown in the ta~le.
the electrical characteristics other than the nominal
T T T T T
Power Rating Motorola l
Nominal Voltage
Alloy Zener Diode Tolerance (±%)
1-10
.4M.64FRlO/lN8l6
.4Ml.36FRS
.4Ml.36FR2
.4M2.04FRS
.4M2.04FR2
MZ2360
MZ236l
MZ2362 CONSTANT-VOLTAGE REFERENCE DIODES FOR
LOW-VOLTAGE APPLICATIONS
MAXIMUM RATINGS
.4M1.36FR5
.4M1.36FR2
.4M2.04FR5
.4M2.04FA2
MZ2361
MZ2362
MECHANICAL CHARACTERISTICS
1-11
.4M.64FR10/l N816,.4Ml.36FR5, .4Ml.36FR2, .4M2.04FR5,
.4M2.04FR2, MZ2360, MZ2361, MZ2362 (continued)
8
.....,I II-- 0J.IIIl
MZ2360 OIA
.4M.64FR 1011 N816 0.107
.4Ml.36FR5 - f--- ~.~~ OIA
o4Ml.36FR2
.4M2.04FR5
.4M2.04FR2
MZ2361
MZ2362
0030
1 10 [034
CASE 51 CASE 59
00·7 0041
POLARITY MARK
ICATHOOEI
100 MIN ,
110
MIN
All JEDEC dimensions and notes apply All JEDEC dimenSions and notes apply
1-12
.4M.64FR10/1N816, .4M1.36FR5, .4M1.36FR2, .4M2.04FR5,
.4M2.04FR2, MZ2360, MZ2361, MZ2362(continued)
10 100
7.0 70
5.0 50
;;( TJ 1250C / TJ-25OC- ;;(
E
0
I I , E 125OC.7 F---- TF 250C i
§ I
... TJ
~
~
2.0
I 1 I ~
~
0
/ I'I .'
I / '/
is I I Max
"
Min =>
C>
~
1.0
~ 1
0
<t 0.7 7.0
~
0
0.5 ~
o
5.0
/ Min it- r----f Max - )---
~
I / J
:f
0.2 2.0 .-
I L / L
0.1 / / 1.0 / /11' /
o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.6 0.7 0.8 0,9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
100 100
70 0
50 50
;;( TJ-125 0C I Tr 250C- TJ - 125°C / TJ 25 0C -
II
...E a
~
~
/
0
/11
G 10 / Min ,~ I Max
a I Min 1/ I Max
~ 7.0
~ 5.0
/ 0
I
~ / I
:f
2.0
/ 1/ ,- I .'/
1.0 L ~ I 1.0 / IiI
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 .24 2.6 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, FORWARO VOLTAGE (VOLTS) VF. FORWARO VOLTAGE (VOLTS)
~ 7.0 ~ 7.0
~ 5.0 /
~ 5.0
f I
~ f
:f
2.0 2. 0
/ I / Ii /
1.0 / / V 1. 0 V /
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
1-13
.4M.64FR10/1N816, .4M1.36FRS, .4M1.36FR2, .4M2.04FRS,
.4M2.04FR2, MZ2360, MZ2361, MZ2362 (continued)
-
w
'"=>>-
~ -2.0 /' . / f.-
ai>-
u:
~
-3.0 -3. 0
o 1.0 2.0 3.0 4.0 5.0 6.0 7.0 B.O 9.0 10 10 20 30 40 50 60 70 BO 90 100
IF, FORWARD CURRENT (rnA) IF, FORWARD CURRENT (mAl
~ G
:;; 3;
-
.s .s
>- 0 >- -2.0
--
15 15
;:; b---:
~
~
w
~
w I-- r--
8 -2. 0 8 -4.0
---
w w
'"=> '" ./'"
g~ -4.0
. / V-
i':
~_ -6.0 /
>-
ai>-
u: u:
~ ,£'
-6. 0 -B. 0
10 20 30 40 50 60 70 BO 90 100 10 20 30 40 50 60 70 BO 90 100
IF, FORWARD CURRENT (mAl IF. FORWARD CURRENT (mAl
1-14
lN821, A, lN823, A(SILICON)
lN825, A, lN827, A
lN829, A
CASE 51
MAXIMUM RATINGS (00·7)
FINISH: All external surfaces are corrosion resistant and leads are readily sold-
erable and weldable.
POLARITY: Cathode indicated by polarity band.
1-15
lN821,A /lN823,A /lN825,A /lN827,A /lN829,A(continu,ed)
.~+
----+-i
+---+---------1"--1
.
H-+_--1t'"--_-+__'"'-_+_' N~~!,±. ---j-.-----1
-------'-------.-.j
fYc~__""+~--""""F_---+-1N829,AL-----i----~
-75~---
-looL_ _L_--,i,....-_-L==±==±::::=::::J
-55 100
TA, AMBIENT TEMPERATURE (OC)
10
I--
.
TI - - - - 10
9.0 - I
---1------
I
9.0
i i
'"'
.5 8.0
---+~~~t==-- '"'
E
r-
8.0
~ 7,5 i5
'"'"co
7.5
'"~ 7.0
u
7.0
'"zw '"
w
z
w 6.0 w 6.0
N N
!9 !9
5.0 5.0
4.0
25 50 -75
·.Vz, MAXIMUM VOLTAGE CHANGE (mV) Vz, MAXIMUM VOLTAGE CHANGE (mV)
(Referenced to IZT" 7.5 rnA) (Referenced to lZT " 7.5 rnA)
1-16
1N821,A / 1N823,A / 1N825,A / 1N827,A / 1N829,A (continued)
~ :~
0
:z: 0r----_ -,-----.
~ 200
_.. _...
~ 10 O~ --
~ ~ 00
~ 40 25 0 C -
--
~ '"w .~
i:i'N i 20
i:i'i 0 :-;;-1 00oC
~ ~;o
I I
10 N 10 !
---
~ 8.0 ~ 8. 0 - .
'"x 6.0
4.0 r---'
'"
~
6. 0
4. 0 _ _ -:-55 0 C
''"N"
N
2.0
1.0
-- '"
f1 2. 0
1. 0
--
I
~ :::-
1.0 2.0 4.0 6.0 8.0 10 20 40 60 80100 1.0 2.0 4.0 6.0 8.0 10 20 40 60 80100
IZ. ZENER CURRENT ImAI IZ. ZENER CURRENT ImAI
6
./
/
/ I
4
/ - I
--
2
. . .,v
/'
0 ~
10 20 30 40 50 100 200 400 1000
fC. CENTER FREQUENCY IkHzl
1-17
lN93S, A, B(SILICON)
thru
lN939, A, B
Temperature-compensated zener reference diodes util-
izing an oxide-passivated junction for long-term voltage
stability. RamRod construction provides a rugged, glass-
enclosed, hermetically sealed structure.
MAXIMUM RATINGS
CASE 51
Junction Temperature: -55 to +175 0 C (00-7)
MECHANICAL CHARACTERISTICS
1-18
1N935, A, B thru 1N939, A, B (continued)
lN935
50~----~----~--~----~-----~----~
lN936 lN937
lN938
lN939
lN939
lN938
I lN935
-20 ~------\---
I
-75-!:-0----::2!:-5---::5!:-0---:!7::-5--~--~-----'
o 50 75
TA. AMBIENT TEMPERATU RE (OC)
100 l/ 0
I
I
I
lL
/
/ --
V
0
lN936A I ..,... lN937A
I / ./
~ 20
I / ./
~ V
- -
}
lN937A 0 // V 1N938A
'I/, ~ lN939A
~ =.1.- lN938A
~~ -:::::-
lN939A t::I
f-- UA
1N937A
I
I
o ~
-10
:--..;:- r--
\'\.
\\.
...... t--..
-
-............
--
~ ....... lN939A
........ lN938A
--
\ \. "-
~
---.j
-100
'" lN936A
-2 0
-3 0
\
\
\
'\.
\ " lN937A
'\ -4 0 \ \ , \ lN936A
--I----r--
1-19
1N935, A, B thru 1N939, A, B (continued)
-f--_.
'>
.§.
150
100
40
30
20
'ri-I
I /
I
I
/'
,/
./" --
r---- ;937B 1-
.- -
I
---- -.....
w
I 1 ./
~
~ _ 50
1/ ,..,- i
_._- 1 N938B . -
'-'5'
w~
",,?
10
/././
~
--.... 1N939B
~.;
'"0
o B 0
~
> 0
3~ ........ 1 N939B
~
2£ -10 "-
x --50 \'\. --......... I
'"N
2
-20 \ '\ ~ lN938B
>~
-100
\ 1'\ i
-30 \ ""'" ""
'\
\- ---~ --~-~
.-
------
lN937S-
-150
-40 f------\ --
9.0 t-----t---
-550C +1500 C
c;:; 600
~ 400
!? - - - - .-
_. - -
--
fA"t' :f--.
--
+75 0 C ~ 200
z ~ sotcl
::::- 11
-.., 8.0 -----~----+....,.- '" 100
.§.
----~-_i.--- ~ ~~
,...
~ 7.0
cr: -j-- ~ 40 - -
= -t
i-+= -
~-
'"'-'=> I ~ 20 - -
I-
~ 6.0 2 10 . --
-55°C
~ ..- 25°C
~-
z => 8. 0
~ 6. 0 =
r- r- -
W
N
~ 4.0
!iJ 5.01----I-~7'7LllooL-- 2 ----
N
N
2. 0 - · i--
4.0 L -_ _ _ '--I<-<-..L-~'__ _ _- ' -_ _ __ L_ _ __ "
1. 0
-150 -100 -50 50 100 0.1 1.0 10 100
WZ. MAXIMUM VOLTAGE CHANGE ImV) IZ, ZENER CURRENT ImA)
(Referenced to IZT::: 7.5 mAl
1-20
1N935, A, B thru 1N939, A, B (continued)
2
IZT = 7.5 rnA
f---BAN OWl OTH = 500 Hz
:/
-j
V
/
..
r--: t- r-
- !--
1"-
0
j
4.0
/
V
o~
10 20 30 40 50 100 200 400 10 00
fe, CENTER FREUUENCY (kHz)
NOTE 1:
Types 1N935B, 1N937B, and 1N939B are available ta MIL-S·19500/ Curves showing the variation of zener impedance with zener current
156. for each series are given in Figure 5. A cathode-ray tube curve-trace
test on a sample basis is used to ensure that each zener characteristic
NOTE 2:
has a sharp and stable knee region.
Voltage Variation (nVz) and Temperature Coefficient.
NOTE 4:
All reference diodes are characterized by the "box method". This
These graphs can be used to determine the maximum voltage change
guarantees a maximum voltage variation (.~VZ) over the specified
of any device in the series over any specific temperature range. For
temperature range, at the specified test current (lZT). verified by
example, a temperature change from +25 to +50 0 C will cause a volt·
tests at indicated temperature points within the range. This method
age change no greater than +22 mV or -22 mV for 1 N935, as illus·
of indicating voltage stability is now used for JEDEC registration as
well as for military qualification. The former method of indicating trated by the dashed lines in Figure 1. The boundaries given are
maximum values. For greater resolution, expanded views of the
voltage stability - by means of temperature coefficient - accurately
shaded areas in Figures 1a, 2a, and 3a are shown in Figures 1b, 2b,
reflects the voltage deviation at the temperature extremes, but is not
and 3b respectively.
necessarily accu~ate within the temperature range because reference
diodes have a nonlinear temperature relationship. The temperature NOTE 5:
coefficient, therefore, is given only as a reference. The maximum voltage change, 6VZ, in Figure 4 is due entirely to the
NOTE 3: impedance of the device. If both temperature and IZT are varied,
Zener I mpedance Derivation then the total voltage change may be obtained by adding b..VZ in Fig-
ure 4 to the b.. Vz in Figure 1, 2, or 3 for the device under considera-
The dynamic zener impedance, ZZT, is derived from the 60-Hz ac
tion. If the device is to be operated at some stable current other
voltage drop which results when an ae current with an rms value
than the specified test current, a new set of characteristics may be
equal to 10% of the dc zener current, IZT, is superimposed on IZT.
plotted by superimposing the data in Figure 4 on Figure 1,2, or 3.
1-21
N941 I A, B(SILICON)
1
thru
lN945, A, B
Temperature-compensated zener reference diodes util-
izing an oxide-passivated junction for long-term voltage
stability. RamRod construction provides a rugged, glass-
enclosed, hermetically sealed structure.
MAXIMUM RATINGS
Junction Temperature: -55 to +175 0 C CASE 51
(00-7)
Storage Temperature: -65 to +175 0 C
DC Power Dissipation: 500 mW @ T A = 25°C
MECHANICAL CHARACTERISTICS
CASE: Hermetically sealed, all-glass
DIMENSIONS: See outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily sold-
erable and weldable.
POLARITY: Cathode indicated by polarity band.
WEIGHT: 0.2 Gram (approx)
MOUNTING POSITION: Any
ELECTRICAL CHARACTERISTICS (TA = 2S'C unless otherwise noted)
Maximum
Voltage Ambient Maximum
Change Test Temperature
Coefficient Impedance
JEDEC AV Z (Volts) Temperature
Type No. °c "'orc ZZT (Ohms)
(Note 1) (Note 2) ±loC (Note 2) (Note 3)
1-22
1N941, A, B thru 1N945, A, B (continued)
~±~--+~-
lN941/ /lN941
10 I -----+--- /
751-----+- I lN943 i
15
i/-I --7L..
I /
-------+-
. ---t---
./
I .
10
1/ lN944
5.0
1/ / .....-
/ / ....- --.....
~ lN945
-10 \ '\.
-......... I
-751-----f---r--,~---+---+--+-I
-1 5
\
\
\
'\.
'\
'" '\ '\.
lN943
I
-1 0 \ \ I
\ \.
lN941 lN941
-100~0---=----=----:!75::-----'----'----' -1 5
o 15 50 75
TA. AMBIENT TEMPERATURE IOC)
;; 100 / 5
I / '/
I / V
.s
w
'"~_ 50 / V/ V-- lNy1A
-- -
1//
1/ / /
1N944A
~ I-:::::::
}
~~ V lN943A
II//....;
--
............
w~
,-,'
",3
~ -g 0
1N945A
,
1 N944A
0
~ ............--...... lN945A
lN94h.-~4A ~ ............
I
~ b-.. -:::::::
D~ ............ 1N945A
>E
>;."
~~-50
x
lN943A
N9~1A
\'\.
\ \ '"""- '" ""- --
~ ~
lN944A
'">; 1
\ \ '\.
~ -100 -1 5 \ \ '\.
\ \
"",- \ \ \ 1N943A
-150 \ \
'\ lN941A
-5 0
lN941A \
\
\
\
lN941A
-100
-55 50 100 -55 50 100
TA. AMBIENT TEMPERATURE IOC)
1-23
1N941 , A, B thru 1N945, A, B (continued)
200 ~ 1N9tB
0 I
lN~41B I
I
/ '" - - "-
150 /' I I
/lN942B
t 1
/
/
lN943B
0 / ..,. ..--
IN942B 5
1/ / ,... ......
,""'""'"
I / ",
o~
~ -== r:'91~ IN914~B
-1:.""",. lN944B .1.1
-..:..::::: ~IN9:;;;;r ) a
,~
,,-:.
~ -~
..... ,
'\. -
'\
....
lN944B
1N945B
0
----
~
.............
~
1N943B
\"\.
\ '\.
\ \.
\ \.
"""" ~
."
.........
\.
lN944B
lN945B
FIGURE 4 - ZENER CURRENT versus MAXIMUM FIGURE 5 - MAXIMUM ZENER IMPEDANCE versus
VOLTAGE CHANGE (At specified temperatures) ZENER CURRENT
(See Note 5) (See Note 3)
MORE THAN 95% OF THE UNITS ARE IN THE RANGI::S INDICATED BY THE CURVES MORE THAN 95% OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES
lO.------,-------r------.-----~7I~--, lOa a
9.0 f------+-------+------+_---H,/¥'I------_j
.;' 150°C
~ ~
;: 8.0f------+-------+----- ,,...--1----4 0
~ 7.5 ----~~
'"G 7.0 f--------+------+---..,,....+------+-------I
'"w -55°C ~
~
N 6.0f------+------"J~~----+_-----l------_j a
!9
5.0~~~~~~~-=::~~~-+~~~ - 25 0 cL
1. a
50 lOa a 1.0 10 lOa
AVZ, MAXIMUM VOLTAGE CHANGE IZ, ZENER CURRENT (rnA)
(Referenced to IZT = 7.5 rnA)
1-24
1N941, A, B thru 1N945, A, B (continued)
0
r-- r-
-
0
0
IZT" 7.5 mA
BANDWIDTH" 500 Hz
..... r-.
--- - r-_
-- r-
-
0
0
10 20 30 40 50 100 200 400 1000
fe, CENTER FREQUENCY (kHzl
NOTE 1:
Curves showing the variation of zener impedance with zener current
Types lN941B. lN943B. and lN944B are available to MIL-S-195001 for each series are given in Figure 5. A cathode-ray tube curve-trace
157. test on a sample basis is used to ensure that each zener characteristic
NOTE 2: has a sharp and stable knee region.
Voltage Variation (6VZ) and Temperature Coefficient. NOTE 4:
All reference diodes are characterized by the "box method". This These graphs can be used to determine the maximum voltage change
guarantees a maximum voltage variation (~VZ) over the specified of any device in the series over any specific temperature range. For
temperature range, at the specified test current (IZTL verified by example, a temperature change from +25 to +500 C will cause a volt-
tests at indicated temperature points within the range. This method age change no greater than +29 mV or -28 mV for lN941. as illus-
of indicating voltage stability is now used for JEDEC registration as trated by the dashed lines in Figure 1. The boundaries given are
well as for military qual ification. The former method of indicating maximum values. For greater resolution, expanded views of the
voltage stability - by means of temperature coefficient - accurately shaded areas in Figures la, 2a, and 3a are shown in Figures lb, 2b,
reflects the voltage deviation at the temperature extremes, but is not and 3b respectively.
necessarily accurate with in the temperature range because reference
NOTE 5:
diodes have a nonlinear temperature relationship. The temperature
coefficient, therefore, is given only as a reference. The maximum voltage change, 6. VZ, in Figure 4 is due entirely to the
impedance of the device. If both temperature and IZT are varied,
NOTE 3:
then the total voltage change may be obtained by adding'" Vz in Fig-
Zener Impedance Derivation ure 4 to the /j, Vz in Figure 1, 2, or 3 for the device under considera-
The dynamic zener impedance, ZZT, is derived from the 60-Hz ae tion. If the device is to be operated at some stable current other
voltage drop which results when an ac current with an rms value than the specified test current, a new set of characteristics may be
equal to 10% of the dc zener current, IZT, is superimposed on IZT' plotted by superimposing the data in Figure 4 on Figure 1,2, or 3.
1-25
lN9S7 thru lN992
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C
D C Power Dissipation: 400 Milliwatts at 50°C Ambient (Derate 3.2 mW;oC
Above 50°C Ambient)
TOLERANCE DESIGNATIONS
With no suffix, tolerance is ±20%, for ±10% units, add suffix A, for ±5% units,
add suffix B.
1-26
1 N957 thru 1N992 (continued)
To designate units with zener voltages other than voltage (V z) and test voltage for leakage current will
those listed, the Motorola type number should be conform to the characteristics of the next higher
modified as shown below. Unless otherwise specified, voltage type shown in the table.
the electrical characteristics other than the nominal
.4 M 115 Z 3
T
Power Rating Motorola
T
l T
Zener Diode
T
Tolerance (±%)
Nominal Voltage
1N 1183thru 1N 1190 (SILICON)
MAXIMUM RATINGS
1-28
1Nl183 thru 1N1190 (continued)
ELECTRICAL CHARACTERISTICS
1.0 rnA
Max DC Reverse Current
~
(Rated VIt ' TC = 25°)
~
800
600
40
\DC 400 ....!!: .....-
~
r-r} iL .",
c:: 35 ~ 200
:::;:
5.
I-
z 30
""
""
""
=>
J'
1\ \
I</> AND 3</>'
r\ \
I-
Z
~
""<.>
=>
100
80
/ r
c.> 0 60
0 25 r: ""~ 40 I
""
~
...""
0 20 i""
\ .\ ""0
.....
eI)
I
I
:::> 20
""
""
""> 15
"" 1'\ \\ 0
""
z TJ = 150 0 Cj /TJ = 25°C
""
"";;-
~
~
10 f-rJ
6~
, \\ ~
z 10
""I- 86
eI)
!:
5 i1
"' ~ ~ - 4
2 I
0 ",,",J
o 120 140 160 180
'\ 1
o
I J
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Te. MAXIMUM CASE TEMPERATURE (OC) V.. INSTANTANEOUS FORWARO VOL TAGE (VOLTS)
lNl191thru lNl198
1N1195A thru 1N1198A
1-29
lN1313 thru lN1327
MAXIMUM RATINGS
CA5E56~
Recommended for applications requiring an exact re-
placement only. For new designs and for industry pre-
ferred replacement devices, see IN2970 series.
(00·4)
1-30
1 N1507 thru 1N1517
Recommended for applications requiring an exact re-
placement only. For new designs and for industry pre-
ferred replacement devices, see 1. O-watt, IN4728
series.
CASE 52
(00-13)
CASE 52
(00-13)
IN 1530, A
For Specifications, See IN429 Data.
CASE 56
(00-4)
CASES6~
Recommended for applications requiring an exact
replacement only. For new designs and for industry
preferred replacement devices, see IN3993 series.
(00-4)
1-31
HIGH VOLTAGE SILICON RECTIFIERS MOLDED ASSEMBLIES
100°C 100pA
ELECTRICAL CHARACTERISTICS
Avg. Rectified Max. DC
Fwd. Fwd. Case Lead
Current.., mA Max.RMS Voltage Dimensions Dimensions
VRM
Rectifier Input @ 100mA
Types (rep) @25°C @100'C Voltage @ 25°C L Dia. L Dia.
CASE 52
(00-13)
1-32
1N 1803 thru 1N 1836 (ZENER DIODES)
CASE 56
(00-4)
~
lN2032 thru lN2040(ZENER DIODES)
CASE 56
(00-4/
1-33
N2163 thru 1N2171 (SILICON)
1
MAXIMUM RATINGS
Junction Temperature: -56 to +200oC .
Storage Temperature: -66 to +2000 c
l:~~. 0.21 Q.350
.~~-- I
DC Power Dissipation: 750 mW @ T A = 25°C
MECHANICAL CHARACTERISTICS
CASE: Hermetically sealed. welded metal glass
DIMENSIONS: Sao Outline drawing.
FINISH: All external surfaces are corrosion resistant and leads are readily solderable
and weldable.
POLARITY: Cathode to case
-j
WEIGHT: 1.5 Grams (approx)
MOUNTING POSITION: Any
CASE 52
(00-13)
1-34
lN2163 thru lN2171, lN2163A thru lN2171A,
lN3580, A, B thru lN3583, A, B (continued)
ELECTRICAL CHARACTERISTICS
Max
Voltage Variation (6.V Z ) and Temperature Coefficient.
Voltage Test Temperature Max Dynamic
Coefficient All reference diodes are characterized by the "box method". This
Change Temperature$' Impedance
Type INote 1) INote 1) (Note 21 guarantees a maximum voltage variation (6.V Z ) over the specified
°c %IOC
Number 6V Z IVolts) ZZT (Ohms) temperature range, at the specified test current (lZT)' verified by
tests at indicated temperature points within the range. Vz is
lN2163.A 0.033 0, +25, +70 0.005
measured and recorded at each temperature specified. The 6V Z
1N2164.A 0.086 -55, D, +25, 0.005
between the highest and lowest values must not exceed the
+75, +125 15
maximum 6V Z given.
lN2165.A 0.115 -55, D, +25, 0.005
+75, +125, +185 This method of indicating voltage stability is now used for JEDEC
lN2166.A 0.007 0, +25, +70 0.001 registration as well as for military qualification. The former method
lN2167.A 0.017 -55,0, +25, 0.001 of indicating voltage stability - by means of temperature co~
+75, +125 15 efficient - accurately reflects the voltage deviation at the tem~
lN2168.A 0.023 -55,0, +25, 0.001 perature extremes, but is not necessarily accurate within the
+75, +125, +185
temperature range because reference diodes have a nonlinear
lN2169.A 0.004 D, +25, +70 0.a005
temperature relationship. The temperature coefficient, therefore,
lN2170.A 0.009 -55,0, +25, 0.0005 is given only as a reference.
+75, +125 15
ELECTRICAL CHARACTERISTICS
Max
Voltage Test Temperature Max Dynamic NOTE 2:
Change Temperatures Coefficient Impedance
Type (Note 1) (Note 1) INote 21 The dynamic zener impedance, ZZT' is derived from the 60~Hz ac
Number 6V Z (Volts) °c %loC ZZT (Ohms) voltage drop which results when an ac current with an rms value
equal to 10% of the dc zener current, IZT' is superimposed on Izr
lN3580 0.088 0.01 A cathode~ray tube curve~trace test on a sample basis is used to en~
1N3581 0.044 0.005
0, +25, +75 25 sure that the zener has a sharp and stable knee region.
lN3582 0.018 0.002
lN3583 0.009 0.001
1-35
lN2620, A, B(SILICON)
thru
lN2624, A, B
Temperature-compensated zener reference diodes util-
izing an oxide-passivated junction for long-term voltage
stability. Construction consists of welded hermetically
sealed metal and glass case.
MAXIMUM RATINGS
CASE 52
Junction Temperature: -55 to+1750C (00-13)
Storage Temperature: -65 to +175 0C
DC Power Dissipation: 750 mW @ T A = 250C
MECHAN ICAL CHARACTE R ISTICS
CASE: Hermetically sealed, welded metal and glass
DIMENSIONS: See outline drawing.
FI N ISH: All external surfaces are corrosion resistant and leads are readily sold·
erable and weldable.
POLARITY: Cathode to case
WEIGHT: 1.5 Grams (approx)
MOUNTING POSITION: Any
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
Maximum Maximum
Ambient Dynamic
Voltage Temperature
Test
Change Impedance
Tem~rature Coefficient
AV Z (Volts) °c ZZT (Ohms)
JEDEC %rC
Type No. (Note 1) ±loC (Note 1) (Note 2)
1-36
1N2620, A, B thru 1N2624, A, B (continued)
:>
.5
~ 25F-==i"-----::*"''----+-----+------+---+-H
:z
~C3
..,g,
wo
",-
~~
o~
0
>..!!
..
"'~
::>-
x
:li -25
N
~
-50 f-----+------f-".---+-----+------+-----H
-75l--.J:---J:--+=~~:=j=~
o 25 50 75
TA. AMBIENT TEMPERATURE (DC)
100
/ I
0 / I lN2622A
:> / / ~
.5 0 / / ./
w
'"z 50 /1 ,/
// lN2623A
~G
//.-- .-
"'0
0
lN2624A
~~
« 0
0 ~
1--
-'~ 0
:----... :--....;:: r-.....
.
o~
>~
::>";;
~
-1 0 \"\. ....... ............ lN2624A
"''''
x- \'\
« -50
'"N -20 \ "\. f'....
...........
" lN2623A
-100
-30
\
\ \.
\ \.
" lN2622A
lN2620A
-40
-50 lN262DA
\ \.
, '\ lN2621A
1\
-150
-55 50 100 -55 50 100
TA. AMBIENT TEMPERATURE (DC)
1-37
1 N2620, A, B thru 1 N2624, A, B (continued)
a 1N2620B I /
a I / lN2621B
I II lN2622B
a I /'"
-
I / ./ I
a I I ./ -----Ji
1/ / --.... lN2623B
// V i I
--
a
I//"'_ ~
--..:::::
-...... ....... 1N2624B
a Ii"""""
-.:.... I ............. ,lN2624BL-
-1 a \"\. ............ ~
~-"'-.
"",l'\. __
......... ! .." "
\ '\ ~ 1N2623B
O~~
-2
~ ~-
'\
-1501-----t---j---t-"..--+---+--H
-3
-4 a
a \
\
\
\
"" lN2622B
lN2621B
_200L_ _J __-1,-__l-__:i===1:::NS26:=2:::0B=:::::.J -5 a lN2620B \
-55 50 100 150 -55 50 100 150
TA, AMBIENT TEMPERATURE (DC)
MORE THAN 95% OF THE UNITS ARE IN THE RANGES INOICATED BY THE CURVES
200
"',.S'" I I
11 100
~
;;j'
.5
>--
~
'"
10
___i I_~T_
w
~
«
~
~ 4
80
60
a
"~
="- "" i"-..
............ ""-
-
......... I
'"
G -:::::: ~ ......1100 0 C
I '"w -55 0 C,/'
t:: "- I
~ 9.0
~
N
~
~
,.
N
::>
'"~
20
""
I
I ,~ ~25;C
I
1a
"" '"
B.O
a -
~ ~: aa ......... ............
1---............
r-..r-..
7.0 5.
-75 1.0 2.0 4.0 6.0 8.0 10 20
AVZ, MAXIMUM VOLTAGE CHANGE (mV) IZ, ZENER CURRENT {mAl
(Referenced to IZT = 10 mAl
1-38
1N2620, A, B thru 1N2624, A, B (continued)
~
>
.3
B-
0
IZT= lJ rnA
Bandwidth = 500 Hz
/
./' - - - r--
--- i
ro-
/
--
w
'"0z 6 1---
'"
=>
I r--
'"x.
2 -
I r- I-r--
B. 0
'"
4. o /
0/
10 20 30 40 50 100 200 400 1000
fe, CENTER FREaUENCY 1kHz)
NOTE 1: for each series are given in Figure 5. A cathode-ray tube curve--trace
Voltage Variation (" VZ) and Temperature Coefficient. test on a sample basis is used to ensure that each zener characteristic
has a sharp and stable knee region.
All reference diodes are characterized by the "box method". This
guarantees a maximum voltage variation (6VZ) over the specified NOTE 3:
temperature range, at the specified test current (1 ZT), verified by These graphs can be used to determine the maximum voltage change
tests at indicated temperature points with in the range. Th is method of any device in the series over any specific temperature range. For
of indicating voltage stability is now used for JEDEC registration as example, a temperature change from +25 to +500 C will cause a volt-
well as for military qualification. The former method of indicating age change no greater than +23 mV or -23 mV for 1N2620, as
voltage stability - by means of temperature coefficient - accurately illustrated by the dashed lines in Figure 1. The boundaries given are
reflects the voltage deviation at the temperature extremes. but is not maximum values. For greater resolution, expanded views of the
necessarily accurate within the temperature range because reference shaded areas in Figures 1a. 2a. and 3a are shown in Figures 1b. 2b.
diodes have a nonlinear temperature relationship. The temperature and 3b respectively.
coefficient, therefore. is given only as a reference.
NOTE 4:
The maximum voltage change, 6VZ, in Figure 4 is due entirely to the
NOTE 2:
impedance of the device. If both temperature and IZT are varied,
Zener I mpedance Derivation then the total voltage change may be obtained by edding "VZ in Fig-
The dynamic zener im pedance, ZZT, is derived from the 6CH-1z ac ure 4 to the 6VZ in Figure 1,2, or 3 for the device underconsidera-
voltage drop which results when an ac current with an rms value tion. If the device is to be operated at some stable current other
equal to 10% of the dc zener current, IZT, is superimposed on IZT. than the specified test current, a new set of characteristics may be
Curves showing the variation of zener impedance with zener current plotted by superimposing the data in Figure 4 on Figure 1,2, or 3.
1-39
lN2804 thru lN2846 (ZENER DIODES)
CAS~
6.8V thru 200V (Case 54)
CIRCUIT CONNECTIONS
STANDARD POLARITY
(ANOOE TO CASE I
REVERSE POLARITY
(CATHOOE TO CASE I
(":'~~~FOF~)(O~NCATS;PEA~~ )
51~olts
(A) NOMINAL ZENER VOLTAGES BETW.EEN THE
VOLTAGES SHOWN AND TIGHTER VOLTAGE
TOLERANCES: n!ice JM JS ZetJ5lB oiall
To desi.gnate units with zener voltages other than Description (each device>. Diodes Tolerance
those assigned JEDEC numbers and/or tight voltage
tolerances (±.3%. ±'2%. ±.l %). the Motorola· type
Motorola Stud
Tolerance
(Ii%\
number should be used. per device (±5%) Code·
.Code: (omit for ±20% ~nits) (A-Not used)
50 M 90 S Z 3
B - Two devices in series
Drce Molola NoJinaI
Description
T Ze~r
Torance
Voltage I Stud Diode (±%)
C - Three devices in series
D - Four devices in series
Example: 50M51SZ5Bl
Example: 50M90ZS3 (e) ZENER CLIPPERS: (Standard Tolerance ±I 0% and
±5%).
(B) MATCHED SETS: (Standard Tolerancesare±5.0%. Special clipper diodes with opposing Zener
±2.0%. ±1.0%). junctions buUt into the device are available by using
1
Zener diodes can be obtained in sets consisting the following. nomenclature:
of two or more matched devices. The method for
specifying such matched sets is similar to the one
described in (A) for specifying units with a special 10
voltage and/or tolerance except that two extra DeJ JM No!taIJS ler JZ
sufrtxes are added to the code number described. Description Voltage Diodes
These units are marked with code letters to Motorola Stud Clipper
identify the matched sets and, in addition, each unit Tolerance for each of
in a set is marked with the same serial number. the two Zener voltages
which is different for each set being ordered. (not a matching require-
Example: 50M20SZZ10 ment)
1-40
1N2804 thru 1N2846 (continued)
ELECTRICAL CHARACTERISTICS
(re =30'C unless otherwise specified) VF = 1.5 V max @ 10 A on all types.
Nominal
Test
Max Zener Impedance Max DC Zener amlSE • Typical
Zener
Zener Voltage Current LEAlME CUIIENt
SO Wan Current Voltage
SO Wan @I 7S'C Case Temp Temp. CoeH.
(Vz) V~ts (lZT)
CASE 54 CASE 58 mA =
ZZT @IZT ZZK @ IZK SmA (lZM)mA I. MAX V. I VR2 %/'C
ohms ohms (~A)
IN4557 IN4549 3.9 3200 0.16 400 11900 150 0.5 0.5 -.025
IN4558 IN4550 4.3 2900 0.16 500 10650 150 0.5 0.5 -.025
IN4559 IN4551 4.7 2650 0.12 600 9700 100 1.0 1.0 .010
IN4560 IN4552 5.1 2450 0.12 650 8900 20 1.0 1.0 .015
IN4561 IN4553 5.6 2250 0.12 900 6100 20 1.0 1.0 .030
IN4562 IN4554 6.2 2000 0.14 1000 7300 20 2.0 2.0 .040
IN2804 IN3305 6.8 1850 0.2 70 6600 150 4.5 4.3 .040
IN4563 IN4555 6:8 1850 0.16 200 6650 10 2.0 2.0 .045
IN2805 IN3306 7.5 1700 0.3 70 5900 75 5.0 4.7 .045
IN4564 IN4556 7.5 1650 0.24 100 6050 10 3.0 3.0 .053
IN2806 IN3307 8.2 1500 0.4 70 5200 50 5.4 5.2 .048
IN2807 IN3308 9.1 1370 0.5 70 4800 25 6.1 5.7 .051
-
IN2832
IN3333
IN3334
52
56
240
220
5.5
6
100
110
790
740
5
5
39.5
42.6
37.4
40.3
.090
.090
IN2833 IN3335 62 200 7 120 660 5 47.1 44.6 .090
IN2834 IN3336 68 180 8 140 600 5 51.7 49.0 .090
IN2835 IN3337 75 170 9 150 540 5 56.0 54.0 .090
IN2836 IN3338 82 ISO 11 160 490 5 62.2 59.0 .090
-
IN2643
IN3345
IN3346
140
150
90
65
60
75
325
400
290
270
5
5
106.4
114.0
100.6
108.0
.095
.095
IN2644 IN3347 160 80 80 450 250 5 121.6 115.2 .095
-
IN2645
IN3348
IN3349
175
180
70
68
85
90
500
525
230
220
5
5
133.0
136.8
126.0
129.6
.095
.095
IN2846 IN3350 200 65 100 600 200 5 152.0 144.0 .100
SPECIAL SELECTIONS AVAI LABLE INCLUDE: (See Selector Guide for details)
1-41
1N2804 thru 1N2846 (continued)
1 ./
,
10
~ :: II In
~
~
!Ii
5
3.0
1.0
...,.V -
~ 0.3
6 V IS THE TYPICAL VOLTAGE CHANGE OBSERVED OVER THE TEMPERATURE RANGE
~
. 1/
FROM +25 TO + 125'C. 6 V IS POSITIVE ABOVE 5 VOLTS, NEGATIVE BELOW 4.3
0.\ VOLTS. BETWEEN 4.3 ANO 5.0V, 6 V VARIES APPROXIMATELY +O.OBV.
0.03
1.0 2.0 5.0 10 20 50 100 200 500 1000
FIGURE 2-
POWER·TEMPERATURE DERATING CURVE FIGURE 3 - LEAKAGE CURRENT
50 100
TYPICALLY, BO% OF THE DEVICES FALL WITHIN THE INDICATED RANGE.
I " (\) Below 5.BV
50
Vi lilll
SEE SPEC FORV,
'"
1=
10
~ 121 Above 5.BV
z 40 ~ V, O.8V (VZINOMINAL) VjTOLUANCfl)
~
ill
Q 30 ~
'\
! 1.0 "- ./
~
111
i 20
I\.
121
~ ~
0.1
.? 10 "'r-...
o
o 25 50 75 100 125 150
"\ 175
0.01
10 100
I
1000
f"".,.
,.
Vi 10
§
111
~
'!
1.0 r-.
30V
IV
ffi
~
.:t 0.1 I'. II
TEST FREQUENCY 50 Hz :S.lV
AClrmsl CURRENT . 10% of I,
0.01 1 11111111 1 1 I I II III II
I 10 100 1000 10,000
II, ZENER CURRENT ImAI
1-42
lN2970 thru lN3015 (ZENER DIODES)
Diffused-junction zener diodes for both military and
CASES~
high-reliability industrial applications. Available with
anode-to-case and cathode-to-case connections (stand-
ard and reverse polarity), i. e., 1N2970 and 1N2970R.
Supplied with mounting hardware.
(00-4)
The type numbers shown have a standard tolerance of ±20% on the nominal
zener voltage. Add suffix "A" for ±10% units or "B" for ±5% units. (2% and 1%
tolerance also available.)
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C.
D C Power Dissipation: 10 Watts. (Derate 83.3 mW;oC above 55°C).
ELECTRICAL CHARACTERISTICS
(TC ~ 25 0 C unless otherwise noted) VF = 1.5 V max @ IF = 2 amp on all types.
Nominal Test Max Zener Impedance Mar DC Zener Mar. Reverse Current •
Type No. Zener Voltage Current Current
V, (@ Izr Izr Zzr @ Izr Z" @ I" IlK I'M mA I.Mu V" V"
Volts mA Ohms Ohms mA (I'A)
IN2970 6.8 370 1.2 500 1.0 1,320 150 5.2 4.9
IN2971 7.5 335 1.3 250 1.0 1,180 75 5.7 5.4
IN2972 8.2 305 1.5 250 1.0 1,040 50 6.2 5.9
IN2973 9.1 275 2.0 250 1.0 960 25 6.9 6.6
IN2974 10 250 3 250 1.0 860 10 7.6 7.2
"VR1 - Test Voltage for 5% Tolerance Device. VR2 - Test Voltage for 10% Tolerance
Device. No Leakage Specified as 20% Tolerance Device.
.Code:
51~OltS
Description (each device) Diodes
Motorola
erJ
Tolerance
per device (±5%)
z±
5 B Orall
Tolerance
of set
(±1 %)
Code"
(omit for ±20% units) (A'Not used)
1
T T
Device Motorola Nominal
T T
Zener Tolerance
T B - Two devices in series
C - Three devices in series
Description Voltage Diode (±%) D - Four devices in series
Example: 10M5l5Bl
Example: 10M90Z3
(C) ZENER CLIPPERS: (Standard Tolerance ±IO% and
±S%).
(B) MATCHED SETS: (Standard Tolerances are ±5 .0%. Special clipper diodes with opposing Zener
±2.0%. ±1.0%). junctions built into the device are available by using
Zener diodes can be obtained in sets consisting the following nomenclature:
of two or more matched devices. The method for
~f'
1
Z Z
T
specifying such matched sets is similar to the one 10
d~,J
described in (A) for specifying units with a special JM
voltage and/or tolerance except that two extra Device Nominal
suffixes are added to the code number described. Description Voltage
These units are marked with code letters to Motorola Clipper
identify the matched sets and, in addition, each unit Tolerance for each of
in a set is marked with the same serial number. the two Zener voltages
which is different for each set being ordered. (not a matching require-
Example: 10M20ZZlO ment)
1-43
1N2970 thru 1N3015 (continued)
ELECTRICAL CHARACTERISTICS
(TC ~ 25 0 C unless otherwise noted) VF = 1.5 V max @ IF = 2 amp on all types.
Nominal Test Max Zener Impedance Max DC Zener Max. Reverse Current •
Type No. Zener Voltage Current Current
V, (@ In hT Zn @ In ZlK @ I" IlK 1,... mA I, Max V" V"
Volts mA Ohms Ohms mA (/LA)
1N2992 39 65 11 300 1.0 210 5 29.7 28.1
1N2993 43 60 12 400 1.0 195 5 32.7 31.0
1N2995 47 55 14 400 1.0 175 5 35.8 33.8
1N2996 50 50 15 500 1.0 165 5 38.0 36.0
1N2997 51 50 15 500 1.0 163 5 38.8 36.7
*V R1. - Test Voltage for 5% Tolerance Device. VR2 - Test Voltage for 10% Tolerance
DeVlce. No Leakage Speclfled as 20% Tolerance Device.
1-44
1N3154, A(SILICON)
thru
lN3157, A
MAXIMUM RATINGS
Junction Temperature: -55 to +175 0 C
Storage Temperature: -65 to +175 0 C
DC Power Dissipation: 500 mW @ T A = 25°C
MECHANICAL CHARACTERISTICS
CASE: Hermetically sealed, all-glass
DIMENSIONS: See outline drawing.
FIN ISH: All external surfaces are corrosion resistant and leads are readily sold-
erable and weldable.
~
40 I ---_. --
100
30
--/- - .--- ... _--- .. _... _-
:; / lN3156
S
w 20 L / ~
'"z 50 / / / - - C--'
~ 01.1 L .....-:. lN3157
.'"
w
~ O~
1 / / ...... f-
0
> -r--
I~""""'"
'"=> ~ ........
r--.. --I"'---.
.'x" -50
-1
O-"'~
\ '\
::---"
.:-........
~ lN3157
'>N" -2 0
-'"\ ~
<
-100
-30
\
'\
"-
-
" 1N3156
-4 0 \ ----"-
-5 0
1------
t'\.~;m54- ~1N3155
-55 50 100
TA, AMBIENT TEMPERATU RE (DC)
-- }
30
lN3155A
1.. V
j / /'
/ ....-- 20 ._- j------- .
II /'
--
1/ ~ lN3157A
k -::::::
lN3156A 0
----
:
lN31fA
/~
~
~ ~ ......... •
lN3157A
0
-1 0
~
L-.. .............. c::--." -,_.-
1N3156A
0 ..... \"- b", .~
~
lN3157A
~ i -2 0 \ \ ..........
-10 0 "'- lN3155A_ \ '\.
\ '\. '"
-15 0
"" ~.
""-
-3 0
-40 - -
\ '\.
\
i"-
-- -~
"" lN3156A
- - ._-
lN31 54A
1
-5 0 \lN3154A \ lN3155A
-20 0
-55 50 100 150, -55 50 100 150
TA, AMBIENT TEMPERATU RE (DC)
1-46
lN3154, A thru lN3157, A (continued)
12 MORE THAN 95% OF THE UNI~ ARE IN THE ~NGES INDICATED BY THE CURVES ~iJO MORE THAN 95°" OF THE UNITS ARE IN THE RANGES INDICATED BY THE CURVES
-55°C :~= -
+251oC +100oC
Ui
~ 50 !S --s; - r-- -
11 e
~ +150 0 C
w
u --:--.... c--... r---- -- .-
5 IZT
z
« ~ -....., r"-.!f- 100°C
~- .- ..- - ._- - ,-
~
~
~
10 ~
;;; -55°C > F:: t::t:::
['
25°C
~
=>
u
~ 9.0 ~
10
-- --t:-- = =: ==
~ ~ 5.0 _.
N
B 8.0 '"x
«
t----- r------
1--
'"N
N
7·~7·':-5-~"-"':'::1..-L----;:!o-----:'----2::':5:------::-!50 1.0
1.0 5.0 10 20 30 40
,VZ, MAXIMUM VOLTAGE CHANGE (mV) IZ, ZENER CURRENT (rnA)
(Referenced to IZT ~ 10 rnA)
0
z 2. 0 V -
'"
=>
'"x
/
« V
1.u
'"
/ 1
10
-----1 20 30 40 50 100 200 400 1000
fe, CENTER fREQUENCY (kHz)
NOTE 1: Curves showing the variation of zener impedance with zener current
Types lN3154 thru lN3157 are available to MIL-S-19500/158 for each series are given in Figure 4. A cathode-ray tube curve-trace
test on a sample basis is used to ensure that each zener characteristic
has a sharp and stable knee region.
NOTE 2:
NOTE 4:
Voltage Variation (.~ VZ) and Temperature Coefficient.
All reference diodes are characterized by the "box method", This
These graphs can be used to determine the maximum voltage change
guarantees a maximum voltage variation (1':. VZ) over the specified of any device in the series over any specific temperature range. For
temperature range, at the specified test current (lZT), verified by example, a temperature change from 0 to +500 C will cause a volt-
tests at indicated temperature points within the range. This method age change no greater than +42 mV or -42 mV for lN3154, as
of indicating voltage stability is now used for JEDEC registration as illustrated by the dashed lines in Figure 1. The boundaries given are
well as for military qualification. The former method of indicating maximum values. For greater resolution,. expanded views of the
voltage stability - by means of temperature coefficient - accurately shaded areas in Figures 1a and 2a are shown in Figures 1b and 2b
respectivel y.
reflects the voltage deviation at the temperature extremes, but is not
necessarily accurate within the temperature range because reference NOTE 5:
diodes have a nonlinear temperature relationship. The temperature The maximum voltage change, 6. VZ, in Figure 3 is due entirely to
coefficient, therefore, is given only as a reference. the impedance of the device. If both temperature and IZT are varied,
NOTE 3: then the total voltage change may be obtained by adding 6. Vz in
Figure 3 to the 6.VZ in Figure 1 or 2 for the device Ulider considera-
Zener Impedance Derivation.o
tion. If the device is to be operated at some stable current other
The dynamic zener impedance, ZZT. is derived from the 60-Hz ac than the specified test current, a new set of characteristics may be
voltage drop which results when an ae current with an rms value plotted by superimposing the data in Figure 3 on Figure 1 or 2.
equal to 10% of the dc zener current. IZT, is superimposed on 'ZT.
1-47
lN3189 thru lN3191
Obsolete, discontinued types, replace with devices from the IN4001 series.
MAXIMUM RATINGS
1-48
lN3213,lN3214
For Specifications, See IN248B Data.
MAXI MUM RATI NGS (At 60 cps Sinusoidal Input, Resistive or Inductive Load)
Peak Surge Current IFM(surge) 2.5 2.5 2.5 2.5 2.5 Amp
(1/2-cycle, 60 Hz)
Peak Repetitive Forward IFM(rep) 0.50 0.50 0.50 0.50 0.50 Amp
Current
ELECTRICAL CHARACTERISTICS
1-49
1 N32 82 thru 1N3286 (continued)
TYPICAL FORWARD CHARACTERISTICS MAXIMUM ALLOWABLE DC OUTPUT
(FOR ALL TYPES) (SINGLE.PHASE RESISTIVE OR INDUCTIVE LOADi
100 100
~
90
S
:I
:3
80
70
_50°
1-...... ..ill
~
~
:3
80
"\. ~
j! 60 25°C 60
i
ia ...
S \
~
50
100°C 1- ::>
u
m 40 Ii! 40
I... 39 I... \
~ 20
20
10
j \
o
V./ / o
\
o 0.5 1.0 1.5 2.0 2.5 3.0 3.5 o 25 50 75 100 125 150 175 200
Y•• FORWARD VOLTAGE DROP (VOLTS) T•• AMBIENT TEMPERATURE (OC)
1-50
lN3491 thru lN3495 (SILICON)
(MR322 thru MR328)
MR330, MR331
MAXIMUM RATINGS
~<'O ..,~ ~ .... .... .., .....<'0 ..,co<'0 0..,.., c;;..,
0-<'0 0-<'0 0-<'0 0-<'0 0-<'0 ..,
<'0..,
r2t
Rating (non-repetitive, for t
greater than 1 ma and less 12t 375 A(rms)2sec
than B.3 mB)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case 9JC 1.2 °C/Watt
MECHANICAL CHARACTERISTICS
CASE: Welded, hermetically sealed construction.
FINISH: All external surfaces corrosion-resistant and the terminal lead is readily
solderable.
POLARITY: CATHODE TO CASE (reverse polarity units are available upon request and
are designated by an "R" suffix i.e. MR327R or IN3491R).
MOUNTING POSITIONS: Any.
1-51
1N3491 thru 1N3495 (continued)
ELECTRICAL CHARACTERISTICS
FIGURE 1- MAXIMUM FORWARD VOLTAGE DROP FIGURE 2- MAXIMUM FORWARD POWER DISSIPATION
-
600 70
II
400 / /
200 ,. """'" 60
_+1+
60° CONDUCTION
16 PHASE STAR)
/ V /
100
r;::r ) I 7 / / /
60 120° CONDUCTION V /
~ - 13 PHASE, HALf WAVE OR
ffi
40 t-- - TJ IWC
r--...
/
I
- fULL WAVE, OR
6 PHASE WITH Ii ..../ / V
~ 20 INTERPHASE)
/ /; /
I
i3
10
n. . TJ -25°C / / / /
- . DC: CONTINUOUS
_
~ 4.0
6.0
/ 1/ /
I 2.0
I
I
'iJ /
;: I'~ ......... 180° CONDUCTION
11 PHASE, HALf WAVE - -
~V
.If 1.0 OR fULL WAVE)
0.6
0.4
10 ~ "/
0.2
I~V
0.1 ~
o 0.4 0.8 1.2 1.6 2.0 2.4 10 20 30 40 50 60
V,. MAXIMUM fORWARD VOLTAGE DROP IVOLTS) I'IAYI' AvERAGE fORWARD CURRENf lAMP)
1-52
1N3491 thru 1N3495 (continued)
--
IHALF WAVE OR FULL WAV8 .........
~ 180" CONDUCTION
i'-.
~
ffi
~
25 I---
I---
20 I - -
3 PHASE
IHALF WAVE OR FULL WAVEI
""
./ """'- ...........
..............
"' '-
25
20
............ .......
-- -
81 I-- 120' CONDUCTION
1== ............ ........... "'- I'...
~ 15 15
fi! 6 PHASE STAR V '-..... ...........
I-- ..........
t:
~
10 r--
r--
60' CONDUCTION
t-.. "' '-
...................
r---... ~
10
I-- r--...
J I--
'--
100 110 120 130 140 150 160 170
" '\. 180
o
f-- ...-
ffi~ 1.4
--
L4
~8
e:~
~:;
i=~
~~ 0.8
t:;'-
1.2
1.0
0.6
f.---
I-
~
-- 06 1.2
1.0
0.8
0.6
cH 0.4 0.4
0.2 0.2
o 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (msl
--
I I I I
'"~ 300
SURGE APPLIED AT RATED
300
LOAD CONDITIONS
Ii 200
t-
r----. --r--- r-- t-- V'MI",I APPLIED AFTER SURGE
NON·REPETITIVE IMAX 500 SURGES DURING DEVICE lIFETIMEI 200
z
0;
r-- t-. r-- t - ~ ,/
REPETITIVE (UNLIMITED NUMBER OF SURGES, TJ < 175'C BEFORE SURGE APPLIED)
1-1-
~ r--- r-- ~ f-- r- I-t-
~
-;;
100 l -
t-- C\ C\ C\ i--- 100
•, l-
70 I-
i-I CYCLE-I
70
1
50 50
1.0 2.0 5.0 10 20 50 100 200 500 1000
CYCLES AT 60 Hz
1-53
1N3491 thru 1N3495 (continued)
.- .. , ;
-I"- ~
20
..........
.......... ~
",
70 ......
~
~ 50 TJ -17S'C
~
\ . TJ -2S'C
\
].
!
~ 7.0
10 " i'.. t'- i""-r--
>..
TJ -2S'C
g \
Iii
l!l ..
I o
~ 5.0 (,'"SA
3A'
...... " ...................
\ ~
~
'"
-rvv-·
CURRENT INPUT WAVEFORM
\ 1\
i:1 3.0
IA .......
r-.. r....
......... ...... r....r-.
=¥~l([
30 oJ
2.0 r-..
\
-rulJ
--- \ 1\
""'r-.
20 I I I I I I I 1.0
1.0 2.0 3.0 S.O 7.0 10 20 30 SO 70 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 S.O 7.0 10
REPETITION RECOVERY (kHz) ).11, RATIO OF REVERSE TO FORWARD CURRENT
JI
.
10 0.1
1.0 2.0 3.0 S.O 7.0 10 20 30 SO 70 100 1.0 2.0 3.0 S.O 7.0 10
V•• REVERSE VOLTAGE !VOlTS) i, FORWARD PULSE CURRENT lAMPS)
'''::'54
1 N3580I A, Bthru 1N3583I A, B
For Specifications, See 1N2163 Data.
1N3649.1 N3650
Obsolete, discontinued types, replace with devices from the MRl120 series.
ELECTRICAL CHARACTERISTICS
Symbol
IN_ IN_ 1113&&1 11136&2 lN3&&3
Characteristic lN3&59R IN_R IN3&61R lN3&62R 1113. Unit
Maximum Forward Voltage VF 1.2 1.2 1.2 1.2 1.2 Volts
at 25 Amp DC Forward Current
Maximum Full Cycle Average
Forward Voltage Drop @ Rated VF(AV) 0.7 0.'1 0.7 0.7 0.7 Volts
PlV and Current
Maximum Full Cycle Average
Reverse Current @ Rated PlV and 5.0 3.0 rnA
Current (as half-wave rectifier, ~(AV) 4.5 4.0 3.5
resistive load, 150°C)
1-55
1 N3659 thru 1N3663 (continued)
40 30
35
r--...
1500 C
250 C
....... -5SO.C
'" 1
\
\
, \
o
o 0.2 0.4
V.V J
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
o
o
..
50 100 150
\ 200
V,. fORWARD VOLTAGE (VOLTS) T", CASE TEMPERATURE (OC)
1N3659-1N3663 rectifiers are designed for press-fitted mounting in a heat sink. Recommended
procedures for this type of mounting are as follows:
These procedures will allow proper entry of the rectifier knurled surface, provide good rectifier- heat
sink surface contact, and assure reliable rectifier operation. If the break is made too deep, thereby reduc-
ing contact area for heat transfer, reliability of operation will be impaired.
These devices can be mounted in a thin chassis by inserting the rectifier through an additional heat sink
plate which is mounted. in intimate contact with the upper side of the chassis. This provides additional con-
tact area for the rectifier knurled edge, as well as additional.heat sink capacity.
TYPICAL THERMAL
RESISTANCE, CASE
TO SINK, fJ~s = O.2·C/W
RIVET
ADDITIONAL
HEAT SINK PLATE
INTIMATE COMPLETE
CONTACT AREA KNURL CONTACT
AREA
THIN CHASSIS
THIN·CHASSIS MOUNTING
1-56
1N3675 thru 1N3703 (SILICON)
1-57
1N3785 thru 1N3820
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C.
D C Power Dissipation: 1. 5 Watts at 25°C Ambient. (Derate 10 mW;oC).
The type numbers shown have a standard tolerance of ±20% on the zener volt-
age. Standard tolerances of ±10% and ±5% on individual units are also available
and are indicated by suffixing" A" for ±10% and "B" for ±5% units to the standard
type number.
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise noted)
VF = 1.5 V max @ 300 mA
Max Zener Impedance Typical
Reverse leakage Current" Zener
Nominal Test Voltage
Zener Voltage @ I" Current Max DC Zener Temp. Coef!.
Type No. (V,) Volts (I,,) 1"@I" 1"@I" IZlI Current I, Max %I'C
mA ohms ohms mA (1,.) mA (ILA) V" V"
IN3785 6.8 55 2.7 700 1.0 195 150 5.2 4.9 .040
IN3786 7.5 50 3.0 700 0.5 175 75 5.7 5.4 .045
1N3787 8.2 46 3.5 700 0.5 155 50 6.2 5.9 .048
1N3788 9.1 41 4.0 700 0.5 140 25 6.9 6.6 .051
1N3789 10 37 5 700 0.25 125 10 7.6 7.2 .055
1N3790 11 34 6 700 0.25 115 5 8.4 8.0 .060
1N3791 12 31 7 700 0.25 105 5 9.1 8.6 .065
1N3792 13 29 8 700 0.25 98 5 9.9 9.4 .065
1N3793 15 25 10 700 0.25 85 5 11. 4 10.8 .070
1N3794 16 23 11 700 0.25 80 5 12.2 11. 5 .070
IN3795 18 21 13 750 0.25 70 5 13.7 13.0 .075
1N3796 20 19 15 750 0.25 62 5 15.2 14.4 .075
1N3797 22 17 16 750 0.25 56 5 16.7 15.8 .080
IN3798 24 16 17 750 0.25 51 5 18.2 17.3 .080
1N3799 27 14 20 750 0.25 46 5 20.6 19.4 .085
IN3800 30 12 25 1,000 0.25 41 5 22.8 21. 6 .085
1N3801 33 11 30 1,000 0.25 38 5 25.1 23.8 .085
1N3802 36 10 35 1,000 0.25 35 5 27.4 25.9 .085
IN3803 39 10 40 1,000 0.25 31 5 29.7 28. 1 .090
1N3804 43 9.0 45 1,500 0.25 28 5 32.7 31. 0 .090
1N3805 47 8.0 55 1,500 0.25 ~ 5 35.8 33.8 .090
IN3806 51 7.4 65 2,000 0.25 24 5 38.8 36.6 .090
1N3807 56 6.7 75 2,000 0.25 22 5 42.6 40.3 .090
1N3808 62 6.0 85 2,000 0.25 20 5 47.1 44.6 .090
IN3809 68 5.5 95 2,000 0.25 18 5 51. 7 49.0 .090
1N3810 75 5.0 110 2,000 0.25 16 5 56.0 54.0 .090
1N3811 82 4.5 130 3,000 0.25 14 5 62.0 59.0 .090
1N3812 91 4.1 150 3,000 0.25 13 5 69.2 65.5 .090
IN3813 100 3.7 200 3,000 0.25 12.0 5 76.0 72.0 .090
1N3814 110 3.4 300 4 000 0.25 11. 0 5 83.6 79.2 .095
1N3815 120 3.1 350 4,500 0.25 10.5 5 91. 2 86.4 .095
1N3816 130 2.9 400 5,000 0.25 9.0 5 98.8 93.6 .095
IN3817 150 2.5 700 6,000 0.25 8.0 5 114.0 108.0 .095
1N3818 160 2.3 750 6,500 0.25 8.0 5 121. 8 115.0 .095
IN3819 180 2.1 800 7,000 0.25 7.0 5 137.0 130.0 .095
IN3820 200 1.9 1,000 8,000 0.25 6.0 5 152.0 144.0 .100
*VR1 - Test Voltage for 5% Tolerance Device. VR2 - Test Voltage for 10% Tolerance
Device. No Leakage Specified as 20% Tolerance Device.
1-58
1 N3821 thru 1N3830 (SILICON)
SERIES
(lM3.3AZ10 thru lM7.5AZ10)
*MAXIMUM RATINGS
Rating Symbol Value Unit
MECHANICAL CHARACTERISTICS
~O.215MAXOIA
CASE: Welded. hermetically sealed metal and glass.
DIMENSIONS: See outline drawing.
FINISH: All external surfaces are corrosion-resistant and leads are readily solderable
and weldable.
POLARITY: Cathode connected to the case. When operated in zener mode, cathode will
be positive with respect to anode.
WEIGHT: 1.4 Grams (approx)
MOUNTING POSITION: Any
1-59
1N3821 thru 1N3830, 1N3016thru 1N3051 (continued)
lN3821
lN3822
3.3
3.6
76
69
10
10
400
400
1.0
1.0
·,00
·tOO
·'.0
'1.0 ...
1.0
1.0
276
252
lN3823 3.9 64 9.0
9.0
400
400
1.0
1.0
,.0 ·'.0
*1.0
1.0
1.0
238
213
lN3824 4.3 .8 '10
lN3B25 4.7 '3 8.0 500 1.0 '10 "1.0 1.0 194
1N3B26 5.1 49 7.0 550 1.0 '10 ·1.0 1.0 178
lN3827 5.6 45 5.0 600 1.0 '10 ·2.0 2.0 162
1N3828 6.2 41 2.0 700 1.0 '10 ·3.0 3.0 146
lN3829 6.S' 37 1.5 500 1.0 '10 ·3.0 3.0 133
tN3B30 7.5 34 1.5 250 1.0 '10 ·3.0 3.0 121
I
NOTE 2 - SPECIALS AVAILABLE INCLUDE: with the same serial number. which is different for each
set ordered.
(A) NOMINAL ZENER VOLTAGES BETWEEN THE VOLT-
T;;;r;;;;
AGES SHOWN AND TIGHTER VOLTAGE TOLER- 1 M51 A 5 B
ANCES: To designate units with zener voltages other than
those assigned JEDEC numbers and/or tight v,oltage toler-
ances (±3%. ±2%. ± 1%1. the Motorola type number should
D Te
Desc~~~ion
lNJ;21
(each device)
thru Tolerance
T
Ove:':1
Tolerance
lN3830 per device of set (±1%)
be used. Motorola only ±5% (omit for
1 M 5.1 A Z 3
Device
Description
J T
Motorola
T
Nominal 1N3821
Voltage
T
thru
T
Zener
Diode
T
Tolerance
(±%)
±20% units)
Code
A - Not used
1N3830 EXAMPLE lM51Z5Bl B - Two devices in series
only C - Three devices in series
EXAMPLE 1M5_1AZ3 o- Four devices in series
1-60
1N3821 thru 1N3830, 1N3016thru 1N3051 (continued)
APPLICATION NOTE
(C) ZENER CLiPPE RS: (Standard Tolerance±10% and ±5%).
Since the actual voltage available from a given zener diode is
Special clipper diodes with opposing Zener junctions built temperature dependent, it is necessary to determine junction tem-
into the device are available by using the following nomen- perature under any set of operating conditions in order to calculate
clature: its value. The following procedure is recommended:
T
1
Device
Description
Motorola
T
Nominal
Voltage
T
lN3821
thru
lN3830
only
Zener
Diodes
T cJperT
1-61
lN3821 thru lN3830, lN3016thru lN3051 (continued)
3.0
./
4.0 5.0 6.0 7.0 8.0 9.0 10 II 12
N
;; 10
a
/1W ~ W W 100 IW I~ IW IW B
Vz, ZENER VOL TAGE @ IZT (VOLTS) Vz, ZENER VOLTAGE@IZT(VOLTS)
~ O. 5
---
to
~ 0.3
./
'"uN 0.2 \ /
? \ ~
o. I
2.0 3.0 5.0 10 20 30 50 lOa 200
TA=125 0 C_
I'\.
TA - 25 0 C
0.1
3.0 5.0 10 30 50 lOa ISO 200
NOMINAL Vz (VOLTS)
1-62
1N3821 thru 1N3830, 1N3016thru 1N3051 (continued)
= D .O.~
.....
"..,..
- - 0=0.2
= =
- 0-0.1
0=0.05
-DUTY CYCLE. 0 = I1/t2
SINGLE PULSE LlTJL OJLIt)PPK
r-SLIL
PPK : ~:
- - 0 0.02 REPETITIVE PULSESLlTJL -OJL(t. D)PPK ~tl :
~t2~
1.0 -tT
0= om --
StGi E rUi SE
NOTE: Below 0.1 Second, Thermal
Response Curve is Applicable
to any Lead Length (Ll.
II II
I I
II II I
0.003 0.005 0.01 0.03 0.05 0.1 0.3 0.5 1.0 3.0 5.0 10 30 50 100 200
t. TIME (SECONDS)
~
z
~
~ 130 /
,/
-'
«
:E
ffi 120 /"
"'-
:;5 PRIMARY PATH OF I
CONDUCTION IS THROUGH
/'
~e.. THE CATHODE LEAD ./
-' 110
6 V
>:-
z
'"t; 100 V
z
;:; /'
~ 90 /'
1/8 1/4 3/8 112 5/8 3/4 118 1.0
L. LEAD LENGTH TO HEAT SINK (INCH)
3000
OIFFUSEO JUNCTION
DEVICE
g2000
~ .L
::!i
~
::; 1000
SUUAR E WAVE PU LSE:
PULSE WIDTH = 0.01 ms
DUTY CYCLE = 0%
-
~ ~ lL = 50°C ±20C@3/8"
~ 800
600
.......... I I
"ALLOly JUNICTIOIN riEJldE
400 -I T -I Tff
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
1-63
lN3821 thru lN3830, lN3016 thru lN3051 (continued)
1.0
0.7 MUL TlPL Y NORMALIZEIl POWER FACTOR TIMES FIGURE~;.t
0.5 SURGE POWER POINTFOR VOLTAGE IN OUESTION, TO OBTAIN
~D=O SURGE CAPABILITY AT OIFFERENTPULSE WIDTHS AND DUTY
0.3 ....... CYCLES. THE 1.0 X REFERENCE POINT IS 0.01 m,ATO% OUTY
t'" 0.2
r-.. CYCLE.
r-
:l:
ffi O. 1 r--........
~ 0.07
~ 0.05 r--
~ 0.03 ~ ......
r-- r-.
ffi
N
::J
'"
~ 0.01
o
Z
0.02
0.007
0.005
I--
0.05
0.1
t---
- r- r---
--
0.003 0.2
0.002
0.001
0.01 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 30 50 70 100 300 500 700 1000
5000
TJ 25°C -
...
w
~
'-'
z
2000
1000
500
- VZ=3.9V
8.2 V
'"
-
I-
;:;
<l': 200
~ 27 V
;3
100 I--.
U 56V ~
50 91V=
20
200 V
10
0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
VR, REVERSE VOLTAGE (VOLTS)
1-64
lN3879 thru lN3883
MR1366
~. ot,
~O.437
*MAXIMUM RATINGS
Rating Symbol 1N3879 1N3880 1N3881 1N3882 1N3883 MR1366 O.424-..._ _ _ _ G
.,
Peak Repetitive Reverse VOltage Volts MAX
Working Peak Reverse Voltage 50 100 200 300 400 600
DC Blocking Vol~age
Non·Repetitive Peak Reverse Voltage VRSM 75 150 250 350 450 650
RMS Reverse Voltage VRIRMS) 35 70 140 210 280 420 Volts
Average Rectified Forward Current '0 Amps
(Single phasa, resistive load, 6.0
TC - 1000 C)
Non·Repetitive Peak Surge Current Amps
(surge applied at rated load _----150
continuous) (one cycle)
Operating Junction Temperature Range ~65 to +150 'c
Storage Temperature Range -65 to +175
THERMAL CHARACTERISTICS·
Symbol
Thermal Reslstancl1, Junction to Case ROJC 3.0
Motorola guarantees the listed value, although parts having higher values of thermal HlSISlance will meet the current rating.
Thermal resistance is not required by the JEDEC registration.
-Dimension isa diameter
-ELECTRICAL CHARACTERISTICS
All JEDEC dimenSions and notes apply
Characteristie Symbol Typ M•• Unil
Instantaneous Forward Voltage 'F Volts
(IF - 19 Amp, TJ - 1S00C) 1.5
Volts
CASE 568
Forward Voltage VF
1.0 1.2 DO·4
(IF - 6.0Amp, TC - 25 0 C)
Reverse Current (rated dc voltage) TC - 25 C
TC-1000C
'R 10
0.5
15
1.0
.A
mA
1 -65
1N3879 thru 1N3883, MR1366 (continued)
200 100
0
I"'- I III I I I I
Prior to surge, the rectitier
I I
I I
1"',.....
10 0 vV 0
is operated such that TJ '" 150 oC;
VRRM may be applied between
each cycle of surge --i-
TJ - 25'C 0
0 L
0 ~ I
50 V
~'150'C- t-
L.
III '-, )'-.,.!
L v 0
f'~
0 V-
Of-- f\ 1\ 1\ r-
I L Of-- f--- ··--L-l CYCLE
II 0
0
V 0 I I IIII
I L3.0 5.0J 1111
f o
1.0 2.0 7.0 10
NUMBER OF CYCLES AT 60 H,
20 30 50 70 100
0 I NOTE 1
I
0
0
J=[Jl _t ll _
PPk Pllk
DUTY CYCLE, 0 ~ lpit)
PEAK POWER,Ppk,is peak Of. '"
eqUivalent square power pulse
.~ I I f---'1-----1 TiME
1. 0
I To determme ma~imum junction temperatur~ of the diode in
the following procedure is recommended
J given Situation,
0.3 where TJC is the increase in function temperatllre above the case temperature
It may be determined by
[;,. TJC = Ppk . ROJC [0 + (1 - 0) . r(1j + tpl + dtp) dq)]
O. 2 where
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 r(t) " normalized value of tranSient thermal resistance at time, t, from Figure
3, i.e
'F, INSTANTANEOUS FORWARD VOLTAGE IVOLT~I
r (11 + tpl " nOrmijllled value of transient thermal resistance at time 11 t tp
1. 0
3
2
-
1
,....V
5
V
3
(SEE NOTE 1)
0.0 2
0.0 1 I111I1
0.001 0.002 0.005 O.oJ 0.02 0.05 0.1 0.2 0,5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t,TIME (m,)
1-66
1N3879 thru 1N3883, MR1366 (continued)
~ ~ 4.01--+--tf--r-xr--t---+--t---t------1
2.0 - 5.0 ----I[L~ '/
0
~~
> ~ 3.0f--+-+y.,.y.+--t--+--+---f----j 0 /~ ~
""'.0
:; 2.0 0
h W
E
2.0 3.0 4.0 5.0 6.0
IFIAV), AVERAGE FORWARD CURRENT lAMP)
7.0 8.0
:/W 1.0 2.0 3.0 4.0 5.0 6.0
IFIAV), AVERAGE FORWARD CURRENT lAMP)
7.0 8.0
0: 8. 0 - 8.0 0 -
0:
'"
:0.
~ 7.0
- )-- ---- ----
f---- '"
:0. 7.0 r-
/ RESISTIVE LOAO
~
~
oo
'-'
o
'"
«
6. 0 -
-
5. 0 -
-
i-- ---- --
~
"'
----+----"-
/ CAPACITIVE LOAD
~L~o.
......... ~IIAV)
-- 0:
'"
oo
~
'"
6.0
5.0
f-
~
)--
"'"
~~
..........""" ~'
~
o
4. 0 -
-
3.0 - ,
_.- ---_.
.- - ._-
-----
-_.-. ~
~~
10
20
«
~
o
~
4.0
3.0 -
- /-CAPACITIVE
LOA OS
IIPK) _ ~ ~" "
~
~> ~~
w
'";i
IIAV) - 2.0;5.0
------- ~~
«
:; 1.0
«
2.0 --
- i - ~~
w
>
«
2.0 --j ) - - _ ,10 -----
:;: 1.0 -
-------
~O--------- ---- ---- ~~
" "
u: «
o I-.J ~ o' -
o 80 90 100 110 120 130 140 150 o 80 90 100 110 120 130 140 150
TC, CASE TEMPERATURE 1°C) TC, CASE TEMPERATURE 1°C)
10 1
-
- = VR - 100 V
./
V
V
1
/'
10-2 V
100 200 300 400 500 600 700 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR, REVERSE VOLTAGE IVOLTS) TJ, JUNCTION TEMPERATURE 10C)
1-67
lN3879 thru lN3883, MR1366 (continued)
~ 5.01
w
~
>-
10
7. o I
f----------
3.of---------- "ff+-
I-tfr Vfr
f----
TJ 25°C
II'
10 0
0
- -. f-...
TJ ~ 25°C
~
...........
2. 0 r-.....
>
§ 1.0
V-Vir 1.1 V
r"'--t--.
~
0
~ o. 7
~ o. 5 0
5: o. 3 i
i: o.
2~
.-V
o. 1 I0
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100
'F. FORWARD CURRENT lAMP) .. VR. REVERSE VOLTAGE IVOLTS)
r. 0 2. 0
3
~ o. 5
IFM
40 A
~ 20 A
~
w
1. 0
IFM' 20 ~ 1
I'\.""- ~ 40 A
5~ o.2 ....- ' / 17 [/1.- ~
13
O.5
V
~~
o
w
./ 1/
o
t;; o. I
~
~ o. 2 ./ V V v
V
~ o
0 t> "'- I...-V~
r
~ 0.0
o
5
.~
~ ~ i--'
<::::: -,
'\
I
5.UA
10 A
~
~
_
o. 1
0.0 5 5.0A
lOA
:~ v.- 10 ~ 1.0 A
0.0 0.0 2 ~ ~i--'
LO 2.0 5.0 10 20 50 100 10 2.0 5.0 10 20 50 100
di/dt (AMP/J.ls) di/dt.IAMP/"s)
3. 1. 0
IF~ ~ 20lA 3w 1. 0
IFM~4JA 1/],..
w -
40 A
g~ o.5 Ix g~ o. 5
1/ 1/ ....-
~ /' V v[,... ~ /' .-< v j..
~ o. 2 v ~ o. 2
~ o. 1 ~k i--'
o
w
~
w .1
~ fY P<
i)OA-
> >
lOA 10 A
§.
c: 0.0 5 5.0:A---t ~_ 0.0 5
1.0 A
CJ
'" ~v
:'0 A
....-/. -'
0.0 2 Jae / "l 0.0 2 ~~
1·0 2.0 5.0 10 20 50 100 10 2.0 5.0 10 20 50 100
dildt.IAMP/ps) di/dt IAMP/"s)
1~68
lN3879 thru lN3883, MR1366 (continued)
LI
RI "50 Ohms di/dt ADJUST
T1
RZ" Z50 Ohms
01 "IN4723
DZ" IN4001
03" IN4933 IZO v 3 : ) c ,ll, 03 CI
SCRI "MCR729-10 60 Hz 'IPK) ADJUST om
CI"O_5to50~F
CZ • 4000 ~F 1:1
L1 " 1.0 - Z7 ~H
OZ
T1 = Variac Adjusts I(PK) and di/dt
TZ" 1:1
T3 = 1:1 (to trigger circuit) 01
CURRENT
VIEWING
RESISTOR
NOTE 2
1-69
1N3879 thru 1N3883, MR1366 (continued)
NOTE 3
A/
~
CASE TEMPERATURE
REFERENCE POINT
~
NYLON BUSHING
MICA W.ASHERS
560 195 .002
~ .276 , ' 9 0 ,
,286 .195
.041.
.051
--x-x-
.570 .200 .003
o FLATWASHER
~
o m
Steel, Electro-deposited zinc plate
.490
x
.215
m
.030
x .050
LOCK WASHER
~ $teel, Electro-deposited zinc
~ plate,lnternal tooth
.370 x .~ x .020
.381 .204 .025
NUT
~ 1018 Steel, Electro-deposited zinc
~ plate,10-32NF-2-8
Torque: 15 in-Ibs
1-70
1 N3889 thru 1N3893
MR1376
'MAXIMUM RATINGS
Rating Symbol lN3889 lN3B90 lN3891 lN3892 lN3893 MR1376 Unit
Peak Repetitive Reverse Voltage VRRM Volts
Working Peak Reverse Voltage VRWM 50 100 200 300 400 600
DC Blocking Voltage VR
Non-Repetitive Peak Reverse VRSM 75 150 250 350 450 650 Volts
Voltage
RMS Reverse Voltage 35 70 140 210 280 420 Volts
Average Rectified Forward Amps
Current (Single phase, resistive 12
load, T C =' 100°C)
Non-Repetitive Peak Surge Amp
Current (Surge applied at 200
rated load conditions) (one cycle)
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
'ELECTRICAL CHARACTERISTICS
Characleristic Symbol Min TyO M.. Unil "DimenSion isa diameter
I nstantaneous Forward Voltage vF Volts All JEOEC dimensions and notes apply
(IF =' 38 Amp, TJ = 1500 C) 1.2 1.5
Forward Voltage VF Volts CASE 568
(IF"" 12 Amp, TC = 25°C) 1.0 1.4
00·4
Reverse Current (rated dc voltage) TC-250C 'R 10 15 "A
TC = 100°C 0.5 1.0 mA
1-71
lN3889 thru lN3893, MR1376 (continued)
--
200
.....- .....- i'
VRRM may be applied between
each cycle of surge.
0
100
TJ' 250;"- V .....- 0
70
50 ./
TJ'1500 C 0
" J'.",
li:
:;;
1/. 0-
1\ 1\ r'L
s.... 30
LV 0- 1-..---1..1 CYCLE
u
~
.,::::> 20 I
0
0 II I
J 1.0 2.0 3.0 5.0 10 20 30 50 100
~
~
~ 10 # NUMBER OF CYCLES AT 60 Hz
'"
::::>
~ 7.0
NOTE 1
FLIT
z
~ 5.0
I PPk Ppk
DUTY CYCLE, IJ '" Ip/t]
I
~ tp_ . PE.AKPDWER,Ppk,ispeakofan
~
.~ 3.0
I I------tl~
TIME
eqUlvalenl square power pulSt!:
~ 0.5
.... ::;
~:i 0.3
"''''
2 0 0.2
~~
.... w
w.,
-
~~ 0.1
t::~
t5 ~ 0.05 V
-;jet
'i::'~ 0.03
~ 0.02
....
• 0.0 1
0.001 0.002 0.005 0.D1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10.000
t,TIME (m,)
1-72
lN3889 thru lN3893, MR1376 (continued)
20 20
I(AV)
17 V . / RESISTIVE-_ r- 2
10
1 1--
2.0-5.0 __
/
r--I. l/ ...... V'de
1.10
5.0
I~ V ./ './ INOUCTIVE
LOAD - r- lI- ~ /. V
rx /'1/V- / ./ ~
/ / %: V / ./ ~ V
~~ ./~ ~
~V ~ ~P"
o ~ 'flIP o , ~
o 2.0 4.0 6.0 8.0 10 12 14 o 2.0 4.0 6.0 8.0 10 12 14
IF(AV). AVERAGE FORWARO CURRENT (AMP) IFIAV). AVERAGE FORWARD CURRENT lAMP)
F
F
I- ......... .........
..........
f"...>'
.........
I(PK)
-IIAV)
~_i-"""" 10
-50
F-
I--
I--
~
'"'
~
~
10
8. O-
-
-
.....,
r CAPACITIVE LOAD?:.- ~,
:> ~
I"\,
~
"
'-
I- I-
IIPK) = 2.0.5.0-
/ " ~, "\.
~ 6.0 F r-....-......:::..
__ 20 ~ 6.0 -
I--
.'" -- ...... ~"\.
I- f-IIAV) ,/"
w .......... ~
~
w
-j
'" f- 10
r--.... ~, ..........~
ffi 4.0 f-
I'--...~ .
~ 4. 0--1
'",,
> 20/ lo."
> f- -
'":;; 2.0 I-
~ :;; 2.0 --, 1
~ I- ""'"1"'- "
u:: -j
"'
o:--' 0:-,
o 80 90 100 110 120 130 140 150 80 90 100 110 120 130 140 150
TC. CASE TEMPERATURE 1°C) TC. CASE TEMPERATURE 10C)
I
~
N
:::;
== VR=100V
V
::i 100
'"o
!'O
I-
Z
~ 10- 1
/
w
'"
'"
::>
'w"'
~ f=~ '"'"~ V
10:- 2
'" 10 1 w
0:
t=F<; !E
,nO I I 10- 31 I I I
100 200 300 400 500 600 70 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR. REVERSE VOLTAGE (VOLTS) TJ.JUNCTION TEMPERATURE (OC)
1-73
1N3889 thru 1N3893, MR1376 (continued)
~ 5. 01
w
~
7.o
0
I
I---
3.0 1 - - -
v~
!--tfr lIfr
TJ - 25 0 C
V ~
100
50
- ~
r-....
........ .....
.TJ = 25 0 C
~ 2.0 w
>
o
~ 1.0 ' " Vfr
V 1.1 V
<.>
~ -I'--
a: C3 30
o
a:
O.7 ;,:
~ O. 5 ;3
rJ 20
~ 0.3
..... I--"'"
---
~
,.. 0.2
O. 1 10
1.0 2.0 5.0 10 20 50 100 1.0 2.0 10 20 50 100
'F. FORWARD CURRENT (AMP) VR. REVERSE VOLTAGE. (VOLTS)
.3
w 0.5
IfM
40 A
=20 A
3.
w
1.0 IfJ = 10 1
~ I 'v-" V ~ 40 A
«
13
~ o. 1
,/ V V .. ~ 0.5
~ ~ V"
./ /'
o ~ /" V ,/ ~
t;) 0. 1 ~
c>
0.2
~
",.-
~
a: '"w "'- ...... ~
~ 0.05 ~ O. 1
L'" lOA > lOA"
~ ~IP'~
~ "-
'\ 5.0 A,
§
a:: O.Q5 5.0 A
g 0:0
:~V '"
1.0 A-'
d ~~ 1.0 A
0.0
1.0
I 0.01
1.0
~ ~....-
1.0 5.0 20 50 100
2.0 5.0 10 10 50 100 10
dild! IAMP/",) dr/dt.IAMP/",)
2. 0 1. 0
.3 1. 0
IfL 101~ ;'
.3 1. 0
IFM=JA V'"
w w
~ 40 A
'"a:
5 o.5 ~ O. 5
o ", ./ ,/
w '"a:w
a:
/ .0- "/'....- .7 ,,(V
~ 0.2
~ <'
,
~
~ O. 1
1-74
lN3889 thru lN3893, MR1376 (continued)
TA = Z5 ~I~ DC FO R RECTIFIER
Rz
In MINIMIZE ALL LEAD LENGTHS
lOW
30 Vdc NON-INDUCTIVE C, 1.0 Adc FROM CONSTANT VOLTAGE SUPPLY
CONSTANT VOLTAGE LO.F RIPPLE = 3 mVrms MAX
SUPPL Yo-:+_ _.....--.:.:..:.._ ___<~-----.3~00::...:..V....-__<O- Zout = II> n MAX, OC to Z kHz
RI
L1
di/dt ADJUST
RI = 50 Ohms T1
RZ = Z50 Ohms
01 = IN4723
02 = IN4001
03 = IN4933 Izo?tJvc TIZ 03 CI
IIPK) ADJUST
SCRI = MCR729-1O SO Hz I OUT.
CI =0_5to 50~F
CZ ~ 4000 ~F 1:1
OZ
L1 = 1.0 - Z1 ~H
TI = Variac Adjusts IIPK) and di/dt
TZ =1:1
T3 = 1:1 (to trigger circuit) 01
CURRENT
VIEWING
RESISTOR
NOTE 2
1-75
lN3889 thru lN3893, MR1376 (continued)
NOTE 3
A
V CASE TEMPERATURE
REFERENCE POINT
~
NYLON BUSHING
M. leA W.ASHERS
560 195 ,002
~ .~ .286
x .190 x
.195
.041.
.051
.570 x .200 x .003
o FLAT WASHER
~
o
Steel, Electro-deposIted zinc plate
.490
~ x
.215
m
.030
x .050
LOCK WASHER
~ Steel, Electro-deposited zinc
~ plate,lnternal tooth
.370 x .~ x ,020
.381 .204 025
NUT
~ 1018 Steel, Electro-deposited zinc
~ plate,10-32NF·2-B
.362 Nom. across flats
.375
TORQUE: 15IN·LBS
1-76
N3899 thru 1N3903
1
MR1386
FAST RECOVERY
POWER RECTIFIERS
STUD MOUNTED 50-600 VOLTS
FAST RECOVERY POWER RECTIFIERS 20 AMPERES
.. designed for special applications such as dc power supplies, inverters,
converters, ultrasonic systems, choppers, low RF interference, sonar power
supplies and free wheeling diodes. A complete line of fast recovery rectifiers
having typical recovery time of 100 nanoseconds providing high efficiency
at frequencies to 250 kHz.
"MAXIMUM RATINGS
Rating Symbol lN3899 lN3900 lN3901 lN39D2 lN3903 MR1386 Unit
Peak Repetitive Reverse Voltage VRRM Volts
Working Peak Reverse Voltage VRWM 50 100 200 300 400 600
DC Blocking Voltage VR
Non-Repetitive Peak Reverse VRSM 75 150 250 350 450 650 Volts
Voltage
RMS Reverse Voltage VR(RMS 35· 70 140 210 280 420 Volts
Average Rectified Forward 10 Amp
Current (Single phase, resistive 20
load, TC = 100°C)
Non-Repetitive Peak Surge IFSM Amps
Current (surge applied at 250
rated load conditions) (one cycle)
Operating Junction Temperature TJ -65 to +150 0.115
Range if200l
Storage Temperature Range
"THERMAL CHARACTERISTICS
Tstg . -65 to +175
U
Characteristic o.o.. j f
MIN
Thermal Resistance, Junction to Case
""
Reversa Current (ratlld de voltage) T C '" 2SoC 'R 10 25 DO..
TC = 100"C 0 .• 1.0 mA
1-77
1N3899 thru 1N3903, MR1386 (continued)
500 100
I ".,... ............ I I II I I I I I
-
90 Prior to surge, the rectifier I I
300
I ,,/"
w-aD i"t-- is operated such thatTJ '" 150 oC;
VRRM may be applied between
V
...- ~~ 70
'-"
" tHJ.
each cycle of surge
L ./ ~-'~ 60
u,.';:::'
lll" I"-.. I.....!"-
100 / ~5110C ... '-"
o
z"'
w=>
u'"
",w
UJ 50
Or- J\ 1\ A I'"
70 ~c3 or--- 1--..-1-1 CYCLE
'/ 1:;
ii: V 0
~ 50
... 1/ 0 11111
ffi A o 11111
~ 0
II 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
G NUMSER OF CYCLES AT 60 Hz
~ 20
"
~ NOTE 1
f!
I
'"~
z
~
z
10
7.0
RJL tp__
PPk
I
Ppk
TIME
DUTY CYCLE, 0 '" tp/tl
PE~K POWER, Ppk, is peak of an
equivalent ~quare power pulse.
"
t; 5.0
~
1-'1-----<
To determine maximum junction temll-erature of the diode in a given sit':lation,
.~ the following procedure is recommended
3.0 The temperature of the case should be measured using a thermocouple placed
on the case at the temperature'reference point (see Note 3l. The thermal mass
connected to the case is normally large enough so that it will not significantly
2.0 respond to heat surges generated in the diode as a result of pulsed operation once
steady-state condilionsareachieved. Usiog the measured valu!lof TC, the junction
temperature may be det~rmined.by:
TJ"'TC+ 6TJC
1.0 where 6 TJC is the increase in junction temperature above the case temperature.
It may be determined by·
0.7 6:TJC=Ppk ·ROJC1 0 +{1-.01·r(tl+ 1pl+r(tpl-r(qll
where
0.5 rltl = normalized value of transienl thermal resistance al time, I, from Figure
o 0.4 O.S 1.2 1.6 2.0 2.4 2.S 3.2 3.6 4.0 3, i.e.:
r (t1 + tp) '" normalized value of transient thermal resistance at lime tl + tp
--
~ ~0.05
""13 .......
~ 0::0.03
-E: 0.02
0.0 1
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t, TIME 1m,)
1-78
1N3899 thru 1N3903, MR1386 (continued)
~5 20
I(AV)
10
V
/ / / /" 10
./ 1/
a:;I:
c-
... z
I
5.0
V / /' 5.0':)
F-. V ./
....
UJ Q
"';:
ffi!!::
16
w L / ~V V V ~ :/'"
>!:l
12
/ ~~ V V ...... ~ V de
-
~i5
..
;; B.O
"E ~ ~~
~ ~ ~ K'
~-
4.0
o~
~ o -~4.0
.........-:: I(AV)- 2.0
T I
o 4.0 B.O 12 16 20 o 8.0 12 16 20
IF(AV). AVERAGE FORWARD CURRENT (AMP) IF(AV). AVERAGE FORWARD CURRENT (AMP)
ii: 20 -1 20 r-
'"'
~
I- ....
--i !""'- RESISTI~OE:~OUCTIVE _
I h
H
""- ' \ . de
"\
ffi 16 - ffi 16 f-'
"-
a:
a:
:::>
'"
~ 12
=
-
51
10-
·r
"
""
""'-
a:
a:
:::>
..
'"
:il 12 H
f-
2.0+ 5;--"
I
"'-""
..........
'\.
'\.
'-~ \.
~
~
w 8.0
'"ffi
=
-
-j
r-
-
I(PK)=20
-i(AV)
-
-CAPACITIVE LOADS
J.
.............
.........
""
""-""'" ~
-.........: r-...~
~
~
w
'"w~
8.0 f -
f-
'-
I(AV)
lO
I(PK) = ~O
I
CAPACITIVE LOADS
'-:": ~.
-&
",
~~
I
::: 4.0
0
.....,
-
,.....,
o BO 90 100 110 120
~~
~
130 140
, 150
~
I
4.0 H
o' -
o
H
I==t= VR - 100 V
"I V 1
~
a:
:::>
1 ./ I
'"
w
'"w
a:
>
w
a:
2 V 1
IE
10- 31 1 1 1
20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR. REVERSE VOLTAGE (VOLTS) TJ. JUNCTION TEMPERATURE (DC)
1-79
1N3899 thru 1N3903, MR1386 (continued)
L1
Rl = 50 Ohms di/dt ADJUST
T1
R2 = 250 Ohms
120V~C
01 = 1N4723
02 = 1N4001
03 = 1N4933 ,T2, 03 Cl
60 Hz I(PKI ADJUST om:
SCRl = MCR729·10
Cl =O.5t050pF
C2" 4000 pF 1:1
L1=1.0-27pH 02
T1 = Variac Adjusts I(PK) and di/dt
T2 = 1:1
T3 = 1:1 (to trigger circuit) 01
CURRENT
VIEWING
RESISTOR
NOTE 2
ent. Typical and maximu"m recovery time of all Motorola fast IRM(REC)+----'IL
recovery power rectifiers are rated under a fixed set of conditions
using IF = 1.0 A, VR = 30 V. In order to cOver all circuit
conditions. curves are given for typical recovered stored charge From stored charge curves versus di/dt, recovery time hrr )
versus commutation di/dt for various levels of forward current and peak reverse recovery current (I RM(RECII can be 'cLosely
and for junction temperatures of 25°C, 75°C, 10o"C, and approximated using the following formulas:
15o"C.
To use these curves, it is necessary to know the forward 0 ~ 1/2
current level just before commutation, the circuit commutation trr = 1.41 x [ _R_
dildt
di/dt. and the operating junction temperature. The reverse re-
covery test current waveform for all Motorola fast recovery
rectifiers is shown. IRM(RECI = 1.41. x [ OR x dildt] 112
1-80
1N3899 thru 1N3903, MR1386 (continued)
3
UoI 0.5
IFM = 20 A
40 A .3 1.0
I
IFM -201
~ './ \ ~ 40A
'"i3 /' ./
./ ./~
'"i3 0.5
~ o. 2
~ ;:;::
/" //
'"o ./ C?: 7
t;; O. 1
*~
0
i;; 0.2
0 t> /'
~
~ ~ ......
~~
"'\ 5.0 A
lOA
i
0.1
0.05
'-....
5.0 A
lOA
g 0.02
0.0 1~
V l.0j "'
CJ
0.02 ~~
~
......
1.0 A
3. 1. 0
IF~ = 20lA Y
.3 1. 0
IFM=4JA I/l-'
w w
~ 40 A '"
~ O. 5 '"~ O. 5
u
V ./ /' /
:i:!
t;'"
o
w
ffi
O. 2
O. 1 ~k
/ J/: .//
I.--~
*
~ O. 2
O. 1
.~
/
~ P<
~ ../
~OA:-
I.-
>
*w
>
lOA 10 A
8 §cr::
~ 0.05 /. 5.0 A
0.05
LOA
/.....:
CJ
"' 0.0 2 ~ t::::-""
~~
I\A "'
CJ
0.0 2 ~ ~
1.0 2.0 5.0 10 20 50 100 1.0 2.0 5.0 10 20 50 100
di/dt. (AMP/~s) di/dt (AMP/~s)
1-81
1N3899 thru 1N3903, MR1386 (continued)
-- x
,
MICA WASHERS
,997 ,255 ,004
x-
~. ~",,"m",,",
REFERENCE POINT
..
1.003 .265 .006
~">'.ON
(ST;;~ x~;: x~;~
BUSHIN'G
o
@f
a
FLATWASHER
Steel. Electro-deposited
Zinc plate
.727 )( .276 )( .055
,749 ,296 .071
.160
Mrl-j ~
SOLOER TERMINAL
t::t Copper, electro-tinned
(AMP #341241
.437 I HOLE OIA .
1-82
N3909 thru 1N3913
1
MR1396
FAST RECOVERY
POWER RECTIFIERS
STUD MOUNTED 50-600 VOLTS
FAST RECOVERY POWER RECTIFIERS 30 AMPERES
... designed for special applications such as dc power supplies, inverters,
converters, ultrasonic systems, choppers, low RF interference, sonar power
supplies and free wheeling diodes. A complete line of fast recovery rectifiers
'having typical recovery time of 100 nanoseconds providing high efficiency
at frequencies to 250 kHz.
The Designers Data sheets permit the design of most circuits entirely from the
information presented. Limit curves - representing boundaries on device character-
istics - are given to facilitate "worst case" design.
'MAXIMUM RATINGS
Rating Symbol lN3909 lN3910 lN3911 lN3912 lN3913 MR1'" Unit
Peak Repetitive Reverse Voltage VRAM Volts
Working Peak Reverse Voltage VRWM 50 100 200 300 400 600
DC Blocking Voltage VA
Non-Repetitive Peak Reverse VRSM 75 150 250 350 450 650 Volts
Voltage
AMS Reverse Voltage VAtRMs) 35 70 140 210 280 420 Volts
Average Rectified Forward '0 Amps
Current (Single phase, 30
resistive Joad, Tc = 1000CI
Non-Repetitive Peak Surge IFSM Amp
Current (surge applied at rate 300
load conditions)
QperatingJunction Temperature TJ -65 to +150 °e
Range
Storage Temperatur.e Range T sts -65 to +175 °e
O.060J- ffig"
THERMAL CHARACTERISTICS MIN 1/4-28 UNF.2A
Charaeteristic
Tlrminal2
Thermal Resistance, Junction to Case
'ELECTRICAL CHARACTERISTICS
"Dim'rllioni5adiametar.
Characteristk: Symbol Min Typ Ma. Unit
AIIJEOECdimansionsimdnOl.sapplv
Instantaneous Forward Voltage 'F 1.2 1.6 Volts
OF = 93 Amp, TJ;: lSOOC)
CASE 257
Forward VOltage VF 1.1 1.' Volts 00..
(IF = 30 Amp, TC '" 25 0 C)
Reverse Current (rated de voltage) TC = 25 C 'A 10 25 "A
Te = l00Pe 0.5 1.0 mA
1-83
lN3909 thru lN3913, MR1396 (continued)
0
III
O~
o~
0
!\
~ICYCLE
!\ (\
1'1"'-
-
t-
0
0 11111
~ I o lW1
:5<.> 0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
NUMBER OF CYCLES AT 60 Hz
~ /I
« 0
~
~ NOTE 1
'"::>
:il
2
«
....z
«
~
~
0
7. 0
5.0
FLlL Ip_
1---,,-----1
Pk
.
Ppk
.
TIME
DUTY CYCLE, 0 = tp/q
PEAK POWER, Ppk. is peak of an
equivalent square power pulse.
.~
Todeterminemaximum junction temperature of the diode in a given situation,
the following procedure is recommended:
3. 0
The temperature of the case should be measured using athermocoupl eplaced
on the case at the temperature reference point (see Note 3), The thermal mass
2.0 connected to the case is normally large enough so that 'it will not significantly
respond to heatwl1lesgenerated in thediodeasa result Qf pulsed operationonce
steady-state conditions are achieved. Using the measured value of TC. the junction
temperature may be determined by:
TJ=TC'L"ITJC
1. 0
where·\TJC is the increase in junction temperature above the case temperatur e.
It may be determined by:
o.7 /), TJC =Ppk 'ROJC {O+ (l-DI . rtq +tp)+r(tp) -r(q}j
where
O. 5 dtl" normalized value of transient thermal resi$lance at time, t, from Figure
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 3. i.e.: .
r (t] +tpl '" normalized value of transient thermal resistance at time t,+tp.
VF,INSTANTANEOUS FORWARO VOLTAGE (VOLTS)
1.0
-'
«
:;;
ffi- 0.5
i= ~ .-
---
0.3
~~
Vi ~ 0.2
(SEE NOTE 1)
~~
.... LU 0.1
........ 1--
W<.>
-
>2
§ ~ 0.05
"-'"
"-w
UJ a:: 0.03
-E 0.02 t...---
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 10,000
t, TtME (m,1
1-84
1N3909 thru 2N3913, MR1396 (continued)
/ / V/ / V V/ ~
// ~V V/ V ~ --
/. V~ V /. V~ V
~ f:Y' RESISTIVE INDUCTIVE LOAD
.i-0::V
~
",
o ~
o 4.0 8.0 12 16 20 24 28 32 4.0 B.O 12 16 20 24 28 32
IFIAV), AVERAGE FORWARD CURRENT lAMP) IFIAV), AVERAGE FORWARD CURRENT lAMP)
0:
32 0: 32 r-
"
:s :s" F; " ' - de
~ "'-
I-
~ 24 a:~ 24
r
""" ~
'"
CAPACITIVE
'"
G =>
~
'-'
o h f-t-LOAOS-"
~ ~,
'" IIPK) ~ 2.0.5.0
<t:
~ 16
<t:
~ 16 r---" t-+IIAV) r--'- r"
~
5: ~
0
w w f--
I 10 I --
'" '"~ I ! 20 .~
g 8.0 ~ 8.0 f- f- -
r-- ---t-- - _ .. _-
~
~
'"
<t: <t:
:> :> H - -f---
<t:
<t:
u:: u:: !
o 0- I
o 80 90 100 110 120 130 140 150
10 I
FTJ 150°C
./'
~ 10 3 0
I-
tii
'"
=== 100°C
i
'"
=>
10
2 75°C I L'
~
r:i:. 10 I
== = 50°C
2 V
== '::: 25°C
10 0 I 10- 3
o 100 200 300 400 500 600 700 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
VR, REVERSE VOLTAGE IVOLTS) TJ, JUNCTION TEMPERATURE 1°C)
1- 85
lN3909 thru lN3913, MR1396 (continued)
1
w
~
10
7.0
5.0
3.0
=
===
-
-
u~
~tfr vtr
TJ ~ 25 0 C
,/
10 0
0
-- r-...
TJ~250C
E 2. 0 ...........
r-...
>
~ 1.0
VVir 1.1 V
-r--.
0
~ 0.7
~
~
'"
0.5
0.3
0.2
o. 1
1.0-- -2.0
.-
5.0 10 20
IF, FORWARO CURRENT (AMPI
50 100
0
10
1.0 2.0 5.0 10 20
VR, REVERSE VOLTAGE (VOLTSI
50 100
3
UJ 0.5
IFM
40 A
20 A
::t 1.0 'FMI~201
~ I'v-" V '"'" 40 A
'"
G / .....-V V ... g 0.5
~ 0.2 .....-
~ ~ V-
o ./
o
t; o. I '"~ 0.2
/' V- / ' I--'
~ ~ "> ...... 1--'
8 o /'
w
'"
~ 0.05 ......- 10 A '"w I
to A
~ ~r::::: '\ i'. §
~ iP ~
g 0.02
0.0 1~ V--
'"
1.0 I 5.0 A cc
d '"
0.05
002
0
~ ::::::
..., 1.0 A
50A-tT
3. 1. 0
IF~ ~ 20lA ]. 1,0
IFM ~ 4J A l.-/
w w
40 A --
'"
'"
'"
G
5 g'"'" 0.5
,/ V / /
~ V k-" ~
~ o. 2
L 0 ~ 0.2
/' ~ ./
~ <: V . . . ~ YP<
I-'
8 ~ 1')0 A
'"w> 1 O. I
;:;
~ 0.0 5
10 A .
§ 10 A
oC
./. 5.0 A -i cc
oC
0.0 5
1.0 A
/~ ~
d ~ ;..-'
..., 1\0 A .1 d
1-86
1N3909 thru 1N3913. MR1396 (continued)
L1
di/dt ADJUST
R1 = 50 Ohms T1
R2' 250 Ohms
120~VC
01 = 1N4723
02·1 N4001
03 = 1N4933 IT21 03 C1
60 Hz I (PKI ADJUST om:
SCR1 • MCR729·10
C1 =0.5 to 50l'F
C2 ~ 4000 ~F 1,1
02
L1 • 1.0 - 27 I'H
T1 = Variac Adjusts I(PK) and di/dr
T2 = 1,1
T3 = 1:1 (to triyger circuit) 01
CURRENT
VIEWING
RESISTOR
NOTE 2
1-87
1N3909 thru 1N3913, MR1396 (continued)
MICA WASHERS
.997
--X--x
1.003
.255
.265
.004
.006
~ CASE TEMPERATURE
REFERENCE POINT
~@/o
o NYLON BUSHING
~ x .264 x .060
.372 .274 .070
o
FLAT WASHER
~ Steel, Electro-deposited
~ Zinc plate
.727 .276 .055
-x - x -
.749 .296 .071
~
SOLDER TERMINAL
.160
~ Copper, electro-tinned
MAX.
(AMP #341241
HOLE OIA.
LOCK WASHER .265 ± .005
~ Steel. spring, Electro-deposited
~ Zinc plate, Internal tooth
.460
- x .250
_ x.017
_
.480 .270 .027
NUT
TORQUE: 25IN-LBS
1-88
1 N3993 thru 1N4000 (ZENER DIODES)
MAXIMUM RATINGS
Junction and Storage Temperature: -65°C to +175°C.
D C Power Dissipation: 10 Watts. (Derate 83.3 mW;oC above 55°C).
The type numbers shown in the table have a standard tolerance on the nominal
zener voltage of ±10%. A standard tolerance of ±5% on individual units is also
available and is indicated by suffixing "A" to the standard type number.
ELECTRICAL CHARACTERISTICS
(TB = 30°C ± 3, Vf = l.5 max @ IF = 2 amp for all units)
Nominal Reverse
Zener Voltage Test Max Zener Impedance Max DC Zener leakage Current
V,@I" Current Current
Type No. Volts I" Z"@I,, Z.. @I.. = 1.0 mA I," mA I. V.
mA Ohms Ohms )J.A Volts
IN3993 3.9 640 2.0 400 2380 100 O. 5
IN3994 4.3 580 1.5 400 2130 100 0.5
IN3995 4.7 530 1.2 500 1940 50 1.0
IN3996 5.1 490 1.1 550 1780 10 1.0
SPECI AL SELECTIONS AVAI LABLE I NCLUOE: (See Selector Guide for details)
Motorola
*Code:
5,~olts
J,A z± 5
Alloy
erJ
Description (each device) Diodes
Tolerance
per device (±5%)
1B orall
Tolerance
of set
(± 1%)
Code*
(omit for ±20% units) (A-Not used)
B - Two devices in series
DLce Molola NoJinal
Description Voltage Alloy Diode
T
zler ToJance
(±%)
C - Three devices in'series
D - Four devices in series
Example: lOM5.IAZ5BI
Example: IOMS.OAZ3 (C) ZENER CLIPPERS: (Standard Tolerance ±10% and
±S%).
(B) MATCHED SETS: (Standard Tolerances are ±S.O%, Special clipper diodes with opposing Zener
±2.0%, ±l.O%). junctions built into the device are available by using
Zener diodes can be obtained in sets consisting the following nomenclature:
of two or more matched devices. Tke method for 10
specifying such matched sets is similar to the one
1
described in (A) for specifying units with a special
voltage and/or tolerance except that two extra TJM
Device T J AZener
Nominal fJZ
suffixes are added to the code number described. Description Voltage Diodes
These units are marked with code letters to Motorola Alloy Qipper
identify the matched sets and, in addition, each unit Tolerance for each of
in a set is marked with the same serial number, the two Zener voltages
which is different for each set being ordered. (not a matching require-
Example: IOM4.7 AZZIO ment)
1-89
N400 1thru 1N4007
1
MAXIMUM RATINGS
Rating Symbol
-
0
0
"I:t
0
0
8
('oj
"I:t
M
0
~
"I:t
0
0
"I:t
I.t'I
0
0
"I:t
0
"I:t
......
0
0
"I:t Unit
Working Peak Reverse Voltage VRM(wkg) 50 100 200 400 600 800 1000 Volts
DC Blocking Voltage VR
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions Symbol Max Unit
Maximum Instantaneous Forward Voltage Drop VF Volts
(iF = 1. 0 Amp, T J = 25°C) Figure 1 1.1
MECHANICAL CHARACTERISTICS
CASE: Void free, Transfer Molded
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 350°C, %" from
case for 10 seconds at 5 Ibs. tension
FINISH: All external surfaces are corrosion-resistant. leads are readily solderable
POLARITY: Cathode indicated by color band
WEIGHT: 0.40 Grams (approximately)
~ O. 7 5. a
~ o. 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
~ o. 3 NUMBER OF CYCLES AT 60 Hz
i
'"
o. 2
FIGURE 3-FORWARO VOLTAGE TEMPERATURE COEFFICIENT
~ o. 1 4. 5
~ 0.0 7 4. 0
..!f. 0.0 5 3. 5
3. 0
0.03
P 2. 5
0.02
~ 2. 0
1/
ffi 1. 5
0.0 1 U 1. a
YPICAL RANGE
0.00 7 ~ o. 5
0.005 8 0
-0. 5
0.00 3 -1. a I-'
0.002 -1 .5
-2 .0
0.00 1 -2. 5
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 0.001 0.0050.01 0.05 0.1 0.5 1.0 5.0 10 50
Vf, INSTANTANEOUS FORWARD VOLTAGE IVOLTI iF, INSTANTANEOUS FORWARD CURRENT lAMP)
~
I---
r--
~ ::::- L 112"
0
a
- .....
~
L 1132"
1~
a
~
-- b--'"
3.0 5.0 7.0 10 20 30 50 70 100 200 300 SOD 700 1000 2000 3000 5000 7000 10k 20k 30 k
PW, PULSE WIDTH 1m,)
FOR IIJl(tl VALUES AT PULSE W)DTHS LESS THAN 3.0 ms, THE ABOVE CURVE
CAN BE EXTRAPOLATED DOWN TO 10 ItS AT A CONTINUING SLOPE OF 1/2
1-91
1N4001 thru 1N4007 (continued)
~
=>
'-' 4.0 "k
r---. r--...... L~ 3)8" ...... "'- ~ 2. 0"""'-
-r-- ~~3/~
r-::::: ~ 0
N ~
SO 80 100 120 140 ISO 180 200 20 40 SO 80 100 120 140 ISO 180 200
-
.............
~ ::--...... 'rL~I"
VnlnU~)Ilm
1b--L-l-f-L-dr
:::::: :::- ......... JI-TERMINAL STRIP -l ~
~ t-...... P.C. BOARD
rr-: ::::-"-
,
......... MOUNTING METHOD 1 MOUNTING METHOD 2
-l~ 1!32':':;
I ~ MOUNTING LEAD LENGTH. LIIN.I
......... I
IL~ 1"
I, ~ 20 x 11 ..,1
~~ METHOD 1/32
- I
3/8
75 I
1
85
fiJA
°C/W
55 I 72 I 85 °CIW
0 "Using Mounting Method 1 or 2 with L = I"' the curve marked" in Figure
20 40 SO 80 100 120 140 ISO 180 200
6 can be used for 60 Hz half·wave resistive/inductive load (Rating vs.
Ambient Temperature). The abscissa of Figure 6 then indicates TA in ·C.
Te. LEAD TEMPERATURE lOCI
NOTE 2
80
FIGURE 8- STEADY·STATE THERMAL RESISTANCE nP"
-.J-t,~
nP"L DUTY CYCLE. 0 ~ t,lt l
PEAK POWER, P,b i. peak 01 a.
~tl----l TIME
equivalent square power pulse.
70
To determine maximum junction temperature of the diode in a
given situation. the following procedure is recommended:
SO
0 / .;::::.- The temperature of the lead should be measured using a thermocouple placed
on the lead as close as possible to the tie point. The thermal mass connected to
i-"'" the tie point is normally large enough so that it will not signilicantly respond to
0
MAXIMUM
/. -:/ heat surges generated in the diode as a result of pulsed operation once steady.
/ -:;:; ~PICAL state conditions are achieved. Using the measured value of Tl. the junction
temperature may be determined by,
0
0.....-:: /
/. :;::; V TJ = Tl + .6TJl'.
where 6. TJl is the increase in junction temperature above the lead temperature.
It may be determined by,
O/'"
6 TJl ~ P" [ RJll~1 • 0 + II - 01· RJlltl + tpl + RJLlt,1 - fiJlI1II]
0
I" where HJl(t)
8J L(t l +t p )
= value of transient thermal resistance at time 1 i.e.:
= value of OJl{tl at time tl +tp
L. LEAD LENGTH IINCHESI
BJlltp) = value of 8Jllt) at end of pulse width tp
8J l[t 11 = value of 6Jlltl at time tl
1-92
1N4001 thru 1N4007 (continued)
--s
2. 0 20
TJ ~ 25°C
10
O. 7t--
r---
~
r---
4}1
tfrJh
L-I II
3-
'";:::
10
7.0
0 i'.,
0
t-teJ
/ ~
~50C
~
5 5.0 TI
1/ ~ oJ1 < I, v~ 1b A~~
V f':';, ~ 10V >
~
'-....
O. 3 > 3.0
i-" ......
J..--' ~
0.2
~ ~-20V - 2.0
...... '"
o1 10
0.1 0.2 0.3 0.5 0.7 10 2.0 3.0 5.0 7.0 lO 0.1 0.2 03 0.5 0.7 10 20 3.0 5.0 7.0 10
03
-
I I Lilli
CURRENT INPUT WAVEFORM
f':::: ~
"'<:I ;:,o..~
I'- we
.,'"
:'\
lE
;'0
~
10
7.0
--
5.0
0.2 -
-
J\I'v- r-..
~
<.S
3.0
O. 1
J1J1---- ~
2.0
10
10 2.0 3.0 50 7.0 10 20 30 50 70 100 200 0.1 0.2 03 0.50.7 10 2030 507.010 20 30 50 70 100
REPETITION FREQUENCY IkHzl VR, REVERSE VOLTAGE IVOLTI
1-93
1N4099 thru 1N4135 (SILICON)
(MZ4614 thru MZ4627) *
MAXIMUM RATINGS
Rating Value Unit
t
POLARITY: Cathode indicated by polarity band.
*
WEIGHT: 0.2 gram lapprox)
MOUNTING POSITION: Any
LOOMIN
L
250
~
5 200
~
'"
Z
0
;::: CATHODE/
<t 150
I"-.. BAND
"-
iii
<J)
Ci 100
""- ~
a: ..........
w
~
s:0
Q.
50
cOl
'"
Q.
o CASE 51
(00·7)
o 25 50 75 100 125 150 175
TAl AMBI ENT TEMPERATU RE: (oC)
'Identical to 1 N4614 registration, except registration has a minimum package diameter of 0.115 inches.
1-94
1N4099 thru 1N4135, MZ4614 thru MZ4627 (continued)
ELECTRICAL CHARACTERISTICS
IT A = 25°C unless otherwise noted) I ZT = 250 p.A and VF = 1.0 V max @ IF = 200 mA on all Types
Type
Number
Zener Voltage
Vz
(Note 11
Impadanae
ZZT
(Note 21
R..._
Current .,
(Note 41
Test
Voltage
NO
(Fig 11
(micro-volts per
Max Zener Current
IZM
(Note 31
IR VR
(Note 11 (Voltsl (Ohms! (pAl (Volts) Square Root Cyclel (mAl
MZ4614 1.8 1200 7.5 1.0 1.0 120
MZ4615 2.0 1250 5.0 1.0 1.0 110
MZ4616 2.2 1300 4.0 1.0 1.0 100
MZ4617 2.4 1~00 2.0 1.0 1.0 95
MZ4618 2.7 1500 1.0 1.0 1.0 90
MZ4619 3.0 1600 0.8 1.0 1.0 85
MZ4620 3.3 1660 7.5 1.5 1.0 80
MZ4621 3.6 1700 7.5 2.0 1.0 75
MZ4622 3.9 1660 5.0 2.0 1.0 70
MZ4623 4.3 1600 4.0 2.0 1.0 65
MZ4624 4.7 1560 10 3.0 1.0 60
MZ4625 5.1 1500 10 3.0 2.0 55
MZ4626 5.6 1400 10 4.0 4.0 50
MZ4627 6.2 1200 10 5.0 5.0 45
lN4099 6.8 200 10 5.2 40 35
lN4100 7.5 200 10 5.7 40 31.8
lN4101 8.2 200 1.0 6.3 40 29.0
lN4102 8.7 200 1.0 6.7 40 27.4
lN4103 9.1 200 1.0 7.0 40 26.2
lN4104 10 200 1.0 7.6 40 24.8
lN4105 11 200 0.05 8.5 40 21.6
lN4106 12 200 0.05 9.2 40 20.4
lN4107 13 200 0.05 9.9 40 19.0
lN4108 14 200 0.05 10.7 40 17.5
lN4109 15 100 0.05 11.4 40 16.3
lN4110 16 100 0.05 12.2 40 15.4
lN4111 17 100 0.05 13.0 40 14.5
lN4112 18 100 0.05 13.7 40 13.2
lN4113. 19 160 0.05 14.5 40 12.5
lN4114 20 160 0.01 15.2 40 11.9
lN4115 22 160 0.01 16.8 40 10.8
lN4116 24 150 0.01 18.3 40 9.9
lN4117 25 160 0.01 19.0 40 9.5
lN4118 27 160 0.01 20.5 40 8.8
lN4119 28 200 0.01 21.3 40 8.5
lN4120 30 200 0.01 22.8 40 7.9
lN4121 33 200 0.01 25.1 40 7.2
lN4122 36 200 0.01 27.4 40 6.6
lN4123 39 200 0.01 29.7 40 6.1
lN4124 43 250 0.01 32.7 40 5.5
lN4125 47 260 0.01 35.8 40 5.1
lN4126 51 300 0.01 38.8 40 4.6
lN4127 56 300 0.01 42.6 40 4.2
lN4128 60 400 0.01 45.6 40 4.0
lN4129 62 500 0.01 47.1 40 3.8
lN4130 68 700 0.01 51.7 40 3.5
lN4131 75 700 0.01 57.0 40 3.1
lN4132 82 800 0.01 62.4 40 2.9
lN4133 87 1000 0.01 66.2 40 2.7
lN4134 91 1200 0.01 69.2 40 2.6
lN4135 100 1500 0.01 76.0 40 2.3
1-95
1N4099 thru 1N4135, MZ4614thru MZ4627 (continued)
AMPLIFIER
+ FILTER
fo - 2 kHz TRUE
V... rms
D.C. POWER TEST ZENER V, fl - 1 kHz
VOLT
SUPPLY f2 = 3 kHz
METER
BW= 2 kHz
. Y•
NOISE DENSITY (VOLTS PER SQUARE ROOT CYCLE) = OY-E;-AL-L-GA-I-N-yaw-::B=W
g
'-'
>-
'-'
>-
0
0
...'" 30
'"<
::> r-....
CI
--
u;
15 10
...
Q
r--.
0'" I"'"
z:
Q
z:
o
o 75 100 125 150 175 200 225 250 275 300
I, ZENER CURRENT (!tA)
1-96
1N4099 thru 1N4135, MZ4614 thru MZ4627 (continued)
70
1"-1- 27 V
SOV
;
~ 20
0
- r-- TJ 150°C/ 100 o'Cr r-25°C ~ 55°C/
~
u
0
0
0
IC;V -- - "-
~
~
~
Ia
5. 0
2. 0 / 1/
L
I0 1 I. 0 /
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VR, REVERSE VOLTAGE IVOlTS) V" FORWARD VOLTAGE (VOLTS)
1-97
1N4387 (SILICON)
(MV1804)
MAXIMUM RATINGS
Junction Capacitance * CT pF
(V R = 6.0 Vdc, f =1.0MHz) - 25 35
Figure of Merit Q
.
-
(V R = 10 Vdc, f = 50 MHz) 150 200
FUNCTIONAL TESTS
Power Output TripLer Circuit P 15 18 . Walts
out
Pin = 30W, fin = 150 MHz,
Efficiency f out = 450 MHz 1) 50 60 - %
POWER OUTPUT versus OUTPUT FREQUENCY SERIES RESISTANCE AND FIGURE OF MERIT
FOR HARMONIC TRIPLING versus REVERSE VOLTAGE
30 1400 1.4
I I"..
120 0 1.2 i
:.:
... 1000 1.0 e
"
P,. - 30 WATTS
~
I ....... , ffi Ql-' z
...... ~ 800 0.8 ~
-- P,.
I
20 WATTS
'.
o
.
~
;;:
600 " f~50MHz
0.6 ~
fil
" ii:
p," = 10 WAnS
I
~
d 400
20o I
" l- Rs
0.4 ~
0.2
,
I 0 o
100 200 400 600 800 20 40 60 80 100 120 140 160 180 200
f~,. OUTPUT FREQUENCY (MHz) V•• REVERSE VOLTAGE (VOLTS)
1 N4388 (SILICON)
(MV1806)
MAXIMUM RATINGS
Diode Capacitance CT * pF
(V R = 6.0 Vde, f =l.OMHz) - 10 20
(V R =90Vde, f=l.OMHz) - 5.0 10
Figure of Merit Q -
(V R = 10 Vdc, f = 50 MHz) 200 300 -
(V R = 90 Vdc, f = 50 MHz) 1000 - -
FUNCTIONAL TESTS
Power Output Doubler Circuit P
out
11.0 12.0 - Watts
(Figure 1)
Pin = 20 W, fin = 500 MHz,
Efficiency f out = 1000 MHz 1) 55 60 - %
1-99
1N4388 (continued)
i!; 200
tl
V'
- "8soc - ~
i 10
r-- 1-1-
~
~
d
100 /
'" ; P,,~ lOW
50 r""--
'l ¥,.~sw
20
p,. 3W
10 o
1.0 2.0 s.O 10 20 50 100 100 200 300 400 500 700 10001200
VR, REVERSE VOLTAGE (VOLTS) I, OUTPUT FREQUENCY (MHz)
O
r-
- r-!'" ~ 20W
r-I- ........
t- I-t--
s
0
......
N:ri
r--r-....r-..,
P" lOW
..........
~
S I I
P,,-SW
s
p:,_~WI - 1--
-- ........
Pi, 3W Pill 3W
0 0
100 200 300 400 SOO 700 1000 1200 100 200 300 400 500 700 1000 1200
I, OUTPUT FREQUENCY (MHz) I, OUTPUT FREQUENCY (MHz)
I
lift 50 ohms.
P,,20W I MEGOHM
I 'I
, ,
,
L ____ _ I
0.5·12pF I,L ,I
_..J __________ J
1-100
1N4549 thru 1N4556
lN4557 thru lN4564
For Specifications, See lN2804 Data
1N4565-1 N4584
1N4775- 1N4784
lN4765-1N4774
Low level temperature-compensated zener reference
diodes-highly reliable reference sources utilizing an
oxide-passivated junction for long-term voltage stability.
RamRod construction provides a rugged, glass-enclosed,
hermetically sealed structure.
CASE 51
(00-7)
MAXIMUM RATINGS
MECHANICAL CHARACTERISTICS
1-101
1N4565·1 N4584/1 N4775·1 N4784/ 1N4765·1 N4774 (continued)
Vz
·C %I"C
(Note II
=8.5 Volts ±5% (lZT =0.5 mAl
Max
(Note 21
NOTE 1: NOTE 2:
Voltage Variation c",vZl and Temperature Coefficient. The dynamiC zener impedance. ZZT. is derived from the 6O-Hz ac
All reference diodes are characterized by the "box method". This voltage drop which results when an ac current with an rms value
guarantees a maximum voltage variation (.0. VZ) over the specified equal to 10% of the dc zener current. IZT. is superimposed on IZT.
temperature range. at the specified test current (I ZT). verified by A cathode--ray tube curve--trace test on a sample basis is used to en-
tests at indicated temperature points within the range. This method sure that the zener has a sharp and stable knee region.
of indicating voltage stability is now used for JE DE C registration as
well as for military qualification. The former method of indicating
voltage stability - by means of temperature coefficient - accurately
reflects the voltage deviation at the temperature extremes, but is not
necessarily accurate within the temperature range because reference
diodes have a nonlinear tel1"perature relationship. The temperature
coefficient, therefore. is given only as a reference.
1-102
lN4719 thru lN4725 (SILICON)
lN4997 thru 1N5003
MR1030 thru MR1036, MR1038, MR1040
CASE 60 CASE 70
IN4719 THRU IN4725 IN4997 thru IN5003
MRI030A THRU MRI040A MRI030B THRU MRI040B
RMS Reverse Voltage Vr 35 '10 140 210 280 350 420 560 '100 Volts
1-103
1N4719 thru 1N4725 (Continued)
--
~ 400 fa 2. a
~o:
::l ""
Q. 5 300
z
~ 1. 0
~ O. 8
I liT, = 25"C
~ !z r-- l"- t- ~ o. 6
~'"_ u'"'~ 200
r--- r---
4
'"'"' '"'>
Q.
~
..
;: lOa 0< 2 1
.J
j~
,'" <
01
8 10 20 40 80< lao
I
0< a 0<2 OA
I 0<6 0<8 LO 1.2 1.4 L6 1.8 2<0
~ 150·IC TO 1~5·C
5<0
RES'ISTl~E OR 'INDJCTIVE LOAD)
T,
J ~V (60 CPS.
6t/ V 4<0
I-
I-
1'\
~ V/ V ;;;: '\ DC
""5>- t-
J~ I</> V ~
'" 3<0 1'\
~ Voc
13 'I'-
.
Q
'"
I</>
r\
1'\
~ V/ V ~
;:
'"
~ I'-I'-
'"..'"'
2<0
~ ~V .
0:
~
6ot> t-.....,
" "~ '\ ~
~~ 1 1.0 ~
""'"
.....
~
~~
~ r- "~ ~
I~
I\.
0
o 4 60 80 100 120 140 160 180
I" •• ,. AVERAGE FORWARD CURRENT (AMP) TAo AMBIENT TEMPERATURE ('C)
1-104
lN4728 thru lN4764 (SILICON)
lMll0ZS10 thru lM200ZS10
MAXIMUM RATINGS
Rating Symbol Value Unit
*DC Power Dissipation @TA = 50°C Po 1.0 Watt
Derate above 50°C 6.67 mWloC
DC Power Dissipation @TL = 75°C Po 3.0 Watts
Lead Length = 3/8"
berate above 75°C 24 mWloC
·Operating and Storage Junction TJ, Tstg -65 to +200 °c
Temperature Range
MECHANICAL CHARACTERISTICS
CASE: Void-free, transfer-molded, thermosetting plastic
FI N I SH: All external surfaces are corrosion resistant and leads are readily solderable
o
I I 0.100 DIA
and weldable --l f-- 0.107
POLARITY: Cathode indicated by polarity band. When operated in zener mode,cathode
will be positive with respect to anode
MOUNTING POSITION: Any
WE IG HT: 0.4 gram lapprox)
,1" --::l:
~
:t
~ 4.0
~
FIGURE 1 - POWER-TEMPERATURE DERATING CURVE
5.0
~
~
........
I\.
\
I\.
L = LEAOI LENGTH_
TO HEAT SINK
L ==t'".
POLARITY MARK
'"
;t
~ 3.0
i'... L=l/S" ' \
(CATHODEI I
'\
'"
C
'"3! r--..",,- L- 3/S"
f'.... \
1.10
,.'"
::>
2.0
--.. r--... .......... I\.
_l
-
............ r-... .......... \
x L = 1.0"
«
'"~
1.0
I ............
-... ""- I\. To convert Inches to millimeters multiply by 25.4
~ AIiJEDECdimeoslOlisand notesaplily
20 40 60 SO 100 120 140 160 ISO 200
TL, LEAO TEMPERATURE IOC) CASE 59
D0-41
1-105
1N4728 thru 1N4764 (continued)
1M110ZS10 thru 1M200ZS10
ELECTRICAL CHARACTERISTICS (TA = 250 C unless otherwise noted) 'VF = 1.5 V max, IF = 200 mA for all type.
·Nominal ·Max Zen.r Impedance ·L.... age 'Surge
ZenerYoitage 'Test (Nota 41 Current Current
JEDEC Motorola YZOIZT Current OTA-2&OC
Type No.' TypaNo. Volts .·jZT ZZTO·IZT ZZKOIZK .IZK .IR.. VR, ir-.I!I~
(Note 11 (Note 21 (Nota 2& 31 .inA Ohms Ohriii' IlIA pAMaxOV'l'ts '(~51
lN4728 lM3.3ZS10 3.3 ,76 " '10 400 1.0 1 oil 1.0' 'lS0 ,'.
+ 1M
J'
90 Z S 3 ; M 5 Z S 5B 1
Device
Description --.J
Motoro";
T1
Nominal
'T
Surmetic
Tolerance
(±%) ,
T
D~
Description Motorola
'Code:
T
-r-
51 Volts
(each device)
Zener
.
:J T
Surmetic
LOvIrallTolerance
of set
1±1%)
Voltage B - Two devices in series Diodes
Zener C - Three devices in series Tolerance' , Code'
" ·(A·Not used)
Diode D - Four devices in _ies per device (±5%)
(omit for ±20% units)
Example: lM90ZS3 Example: lM51ZS5Bl
1-106
lN4728 thru lN4764 (continued)
lMll0ZS10 thru lM200ZS10
Special clipper diodes with opposing Zener junctions built Since the actual voltage ayailable from. given zener diode is
into the device are available bV using the following nomen- temperature dependent, it is necessary to determine junction tem-
clature: perature under any ••t of operating conditions in order to calculate
, M 20 Z Z S 10
its. value. The following procedure is recommend'ed:
T T T
TT
Lead Temp.erature. TL' should be determined from:
Surmetic
Device
Description
T
Motorola
Nominal
Voltage
Zener
Diode
Clipper
NOTE 4 - ZENER IMPEDANCE (ZZI DERIVATION ~T JL is the increase in junction temperature above the lead
temperature and may l;J,e found from Figure 2 for 8 train of
The zenar impedance is derived from the 60 cvcle ac voltage.
power pulses (L = 3/8 inch) or from Figure 3 for dc power.
which results when an ac current having an rms value equal to '0%
of the de zener current (lZTor IZKI is superimposed on IZT or IZK.
NOTE 5 - SURGE CURRENT lirl NON·REPETITIVE For worst-case design. using expected limits of I Z. limits of Po
and the extremel of T J(~T J) may be estimated. Changes in voltage.
The rating listed in the electrical characteristics table is maxi-
VZ, can then be found from:
mum peak. non-repetitive, reverse surge current of 1/2 square wave
or equivalent sine wave pulse of 1/120 second duration super-
imposed on the test current.IZT. per JEDEC registration. however.
actual device capability is as described in Figures 4 and 5.
8VZ, the zener voltage temperature coefficient, is found from
Figures 6 and 7.
1-107
lN4728 thru lN4764 (continued)
lMll0ZS10 thru lM200ZS10
--
"'<.>
-' ~ 7.0 - 0 . 2
~~ 5.0
~~
>->:-
ffi
tilt=:
Zu
~ ~ 1.0
>-~
3.0
~ 2.0 -0.05
,I"
~0.02
0.1
~ ~ P"
- ~ ~
DUTY CYCLE. 0 1]/'2 - ~JL.JL
SING LE PU LSE "TJ L = OJLltlPPK
REPETITIVE PULSES "TJL = OJ Lit. D)PPK PPK ~I] '-- i
0.7 ~o NOTE: BelowO.1 Second, Thermal >-'2-'
AespQnse Curve is Applicable
0.5 F"-D 0
) '10 a~y ILe~dl ~'t9'h Ill.
0.3
0:0001
---
0.0002 0.0005 0.001 0.002 0.005 0.01 0.02
~
w
80 1000
800
DIFFUSED JUNCTION
OEVICE
<.> 70
Z 700
'"
to 60
/ ~
600
If
~ V >- 500
~ 50
//
,,/'
'"
~ 400
'"
ffi'" 40
'"5:w SQUARE WAVE PULSE
~ 300 PULSE WIDTH =0.01 ms
tL~
:I:
>-
0
30
//'" w
~
DUTY CYCLE =0%
TL =27 0 C±20 C@3/8"
~
~TL
V iil
6 /'" 200
>:-
20
/
I I
\
Z
0
~
Z
:;
10
PRIMARY PATH OF
CONDUCTION IS TH ROUGH
I THE CYHOO E ~EAO
100
ALLOY JIUNCTiON rTf
Z.O 3.0 5.0 7.0 10 20 30 50 70 100 zoo
~ 1/8 114 3/8 1/2 5/8 3/4 7/8
L, LEAD LENGTH TO HEAT SINK (INCH) VZ. ZENER VOLTAGE IVOL TS)
----
all
01 r-
"-
w
~ 0.1 o.lz
~ 0.07
-
o
~ 0.05
j 0.03
-I-
~ 0.02
0.01
0.01 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 30 50 70 100 300 500 7001000
1-108
1N4728 thru 1N4764 (continued)
1M 11 OZSl 0 thru 1M200ZS1 0
4.0
,/ ----
'"...<'" .......... ~
<3
V
~ ./ ./ I
~ 50
0
2.0
./ ./ RANGE
23 40
V ./
'-'
w
a;
~
~ 30 /1/
:::> V V :::>
j / ./ j 20
1/
as -2.0
V
v-'" 1t:e- 11L
f-
;3 -4.0 ~
N
10
II,
<:t:> 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 11 12 a 20 40 60 80 100 120 140 160 180 200
VZ, ZENER VOLTAGE@ IZT (Va LTSI Vz, ZENER va LTAGE@ IZT (VOLTS)
0.3 f.1 V
> ~VZ
a;
./ TYPICAL
~ 0.2 t.Vz
YPICAL ./ RANG t2
RANGE
w I I
1\
V IZ - 0.1 to 0.5 of IZM
~ o. I
IZ 0.1 to
~ O.OS 0.5 of IZM
N 0.0 6
>
<l
./
0.0 4 1
2.0 3.0 5.0 10 20 30 50 70 100 200
~ w 100
G~ 50
r=
il:f-
en en 20
~'-' TA"125 0 C
-; t; 10
~ ~ 5.0
i<ta;~ 2.0
;:;; ~ 1.0 .....
'"~;;t'-' a.5
TA 25 0 C r---
~ ~ 0.2 r---
~ t 0.1
~w
[5 ~ 0.05
>w
~ ~ 0.0 2
IE ~ 0.0 1
3.0 5.0 7.0 10 20 50 100 200 300
NOMINAL Vz (VOLTS)
1-109
lN4765thru lN4774
lN4775thru lN4784
For Specifications; See IN4565 Data~
LOW NOISE
.lN4896,A TEMPERATURE~COMPENSATED
ZENER REFERENCE DIODES
thru
IN4915,A Highly reliable reference sources utilizing an oxide-passivated junc-
tion for' long-term voltage stability. RamR od construction: provides
a rugged, glass-enclosed, hermetically sealed structure.
12.8 V.:I:.5.0%
IN4932,A •
and 7.5mA
Maximum Voltage Change Specified over Test Temperature Range
19.2 V .:1:.5.0% • Temperature Compensation Guaranteed over Two Standard Oper-
atirig Temperature R~ges:
+25 to +WOoC
-55 to +1000C
MAXIMUM RATINGS
Junction and Storage Temperature: -650 C to +1750 C
DC Power Dissipation: 400 Milliwatts at 5O"c Ambient
(Derate 3.2 mW/oC Above-SOoC)
.- - - - - t &; DIA
'~:~~ DIA
MECHANICAL CHARACTERISTICS
CASE: Hermeticallv sealed, aUillass
DIMENSIONS: See outline drawing.
FINISH: All external surfaces are corrosion resistant and leeds are·readilv
solderable and weldable.· '..
POLARITY: Cathode indicated bV polarity band.
WEIGHT: 0.2 Gram (approx)
MOUNTING POSITION: Anv
CASE 51
00-7
1,-:-110
1N4896, A thru 1N4915A, 1 N4916, thru 1 N4932, A (continued)
Dynamic Dynamic
-
Temp. Coeff. Imped. Temp. Coeff. Im.peeI.
o.VZ forR.,. Ohms o.VZ for Ref. Dh...
T... Volts %I"C Type Vol.. %I"C MIX
Number IN.tell IN_II IN_ZI Number IN.tell IN.tell IN_ZI
.V
IZT = 0.6 rnA *NO ". O.B- .v
IZT:II 0.5 rnA *NO = 1 . 0 -
JHz .JHz
1 N4896 0.096 0.01
lN4896A 0.198 0.01 lN4916 0.144 0.01
1 N4897 0.048 0.005 lN4916A 0.29S 0.01
1 N4897A 0.099 0.005 lN4917 0.072 0.005
1 N4898 0.019 0.002 400 lN4917A 0.149 0.006 600
lN4898A 0.040 0.002 lN4918 0.029 0.002
, N4899 0.010 0.001 lN4918A 0.060 0.002
lN4899A 0.020 0.001
.V • .V
'ZT = 1.0 mA *ND" O.4.JHz IZT= 1.0mA NO"'O.5-
.JHz
1 N4900 0.096 0.01 lN4919 0.144 0.01
lN4900A 0.198 0.01 lN4919A 0.298 0.01
lN4901 0.048 0.005 lN4920 0.072 0.005
1 N4901 A 0.099 0.005 lN4920A 0.149 0.005 300
lN4902 0.019 0.002 200 lN4921 0.029 0.002
lN4902A 0.040 0.002 1 N4921 A 0.060 0.002
VZ= 12.8 V 1N49D3 0.010 0.001
Vz = 19.2 V
lN4903A 0.020 0.001
.V .V
TEMPERATURE IZT'" 2.0 rnA ·NO .. 0.25 JHz IZT - 2.0 rnA *NO - 0.26 -
RANGE:
TEMPERATURE
RANGE: .JHz
lN4904 0.096 0.01 lN4922 0.144 0.01
STANDARD lN4904A 0.198 0.01 STANDARD lN4922A 0.298 0.01
DEVICES 1 N4905 0.048 0.006 DEVICES 1 N4923 0.072 0,006
1 N4905A 0.099 0.005 1 N4923A 0.149 0.005 150
+26, +75. +1000c +25, +75, +1000c 1N4924 0.029 0.002
lN4906 0.019 0.002 100
lN4906A 0.040 0.002 lN4924A 0.060 0.002
tN4907 0.010 0.001
··A"SUFFIX 1 N4907A 0.020 0.001 "A"SUFFIX
-65,0+ 26. .V .V
+75,+1000c IZT = 4.0 mA -NO = o.22Fz
-66.0. +25.
+75,+1000c IZT" 4.0 rnA *ND "" 0.22 JHz
, N490S 0.096 0.01 lN49215 0.144 0.01
lN49Q8A 0.198 0.01 lN4925A 0.298 0.01
lN4909 0.048 0.005 lN4926 0.072 0.005
lN4909A 0.099 0.006 lN4926A 0.149 0.005
lN491Q 0.019 0.002 50 lN4921 0.029 0.002 76
tN4910A 0.040 0.002 lN4927A 0.060 0.002
1N4911 0.010 0.001 1N4928 0.014 0.001
1N4911A 0.020 0.001 lN4928A 0.030 0.001
.V • .V
IZT = 7.5 mA *ND = 0.20- IZT' 7.5 mA ND' 0.20 .JHz
JHz
1N4912 0.096 0.01 1N4929 0.144 0.01
1N4912A 0.198 0.01 1N4929A 0.298 0.01
lN4913 0.048 0.005 lN4930 0.072 0.005
1N4913A 0.099 0.006 1N4930A 0.149 0.0015 36
1N4914 0.019 0.002 25 1N4931 0.029 0.002
1N4914A 0.040 0.002 1N4931A 0.060 0.002
1N4915 0.010 0.001 1 N4932 0.014 0.001
1N4915~ 0.020 0.001 , N4932.A 0.030 0.001
LL
the highest and lowest values must not exceed the max 6 Vz given. Zener Volt
Supply BW = 1.4 kHz
This method of indicating voltage stability is now used for JEDEC Meter
registration as well as for military qualification. The former method
of Indicating voltage stability - by means of temperature coefficient-
accurately reflects the voltage deviation at the temperature ex-
tremes. but is not necessarily accurate within the temperature range Noise Density V out
because reference diodes have a nonlinear temperature relationship. (Volts per Square Root Bandwidth) =- - - - - -
The temperature coefficient, therefore. is given only as a reference. Overall Gain BW
Where BW "" Filter Bandwidth (Hz)
V out Output Noise (Volts RMS)
NOTE 2: Zener Impedance Derivation
The dynamic zener impedance. ZZT' is derived from the 60-Hz ac The input voltage and load resistance ere high so that the zener diode
voltage drop which results when an ac current with an rms value is driven from a constant current source. The amplifier is low noise
equal to 10% of the dc zener current, IZT. is superimposed on IZT' so that the amplifier noise is negligible compared to that of the test
A cathode-ray tube curve-trace test on a sample basis is used to en- TC zener. The filter bandpass is known so that the noise density
sure that the zener has a sharp ~md stable knee region. can be calculated from the formula shown_
1·110A
lN4933thru lN4937·
MR2271
FAST RECOVERY
POWER RECTIFIERS
. SUBMINIATURE SIZE, AXIAL LEAD MOUNTED
FAST RECOVERY POWER RECTIFIERS 50-600 VOLTS
1 AMPERE
8
I I 0.100
--I I-- 0Tii7 0lA
The Designers Data Sheet permits .the design of most circuits entirely from the
information presented. Limit curves - representing dey-ice characteristics boundaries-
are given to facilitate "worst case" design.
r-
1.10
0030
0.034
*MAXIMUM RATINGS
POLARITY MARK
Ratin'll Symbol 1N4933 1N4934 1N4935 MR2271 1N4936 1N4937 Unit (CATHODE)
Peak AepetltiveRaverse Voltage VRRM Volts
Working Peek Reverse Voltage VRWM 50 100 200 300 400 606
DC Blocking Voltage VR
Non-Repetitive Peak Reverse Voltage
1.10
75 150 250 350 450 650 Votts
_'I"
VRSM
RMS Reverse Voltage .VR{RMS) 35 70 140 210 280 420 Volts
Average Rectified Forward Current '0 1.0 Amp
(Single phese, resistive toad,
TA=7sOC)
Non-Repetitive Peak Surge C.urrent IFSM 30 Am ..
(surge applied at rated load
conditions)
AJI JEDECdlmensions and notes apply
Operating Junction Temperature Range TJ -6510 +150 °c
Storage Temperature Range T stg -e5to +175 °c CASE 59
"THERMAL CHARACTERISTICS 00·41
Chillracteriflic
Tl'Iermal Aesistance,Junctionto Ambient
(TVPical Printed Circuit
Board Mounting)
"ELECTRICAL CHARACTERISTICS
Characteristic Symbol MI" Ty. Mox Unit
·Instantaneous Forward Voltage V, 1.0 1.2 Volts
(iF = 3.14 Amp, TJ = 1SOOC)
Forward Voltage V, 1.0 1.1 Volts
OF = 1.0 Amp. T A" 2SoCI MECHANICAL CHARACTERISTICS
-Raverse Current (rated de voltaga) TAB 2So C 'R 1.0 5.0 .A
TA-1000C
CASE: Void Free, Transfer Molded
50 100
FINISH: External leads are gold
'REVERSE RECOVERY CHARACTERISTICS
plated, leads are readily
Chlractaristic Symbol Min Ty. Mox Unit
Aevana Recovery Time
solderable
OF;' 1.0 Amp to
VR = 30 Vdcl {Figure 211
'u 100 200
POLARITY: Cathode indicated by
(IFM'" 15 AmI?, di/dt .. 10 A/~sI{Figurll"22) 150 300 Polarity band.
Rever. Recoverv Current IRM(REC) 1.0 2D Amp
.!IF "'.9Ampto VR ~30Vdcl {Figure 211
WEIGHT: 0.4 Gram (Approximately)
1-111
lN4933 thru lN4937, MR2271 (continued)
~~ 30 t--
A A
1----1., CYCLE
A ..... " r-r--r--
I
~
_ 2
§' 5.0 0
5 I I0 I I1III
~ I o I IIIII
~ 3.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I 1.0
...
:::>
I NUMBER OF CYCLES AT 60 Hz
~ 2.0
i~ II J
'"ffi
fl FIGURE 3 - FORWARD VOLTAGE
1.0
TEMPERATURE COEFFICIENT
z 4. 5
~ O. 7
z 4.0
< I 11
In O.5 3. 5
:!: I 3.0
o.3 I f; 2.5
~ 2.0 II
o.2 I ~ 1.5 TYPICAL RANGE
~ 1.0 L
ld.
~ O.5 L:t
0
8..0· 5 ~
o. I
-1.0
~ I--'
0.07 -1.5
-2.0
0.05 I -2 .5
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
1If. INSTANTANEOUS FORWARD VOLTAGE IVOLTS) iF. INSTANTANEOUS FORWARD CURRENT (AMP)
1-112
1N4933 thru 1N4937, MR2271 (continued)
ii1
2.0 -~ ........ ..........
........
r-...
BOTH LEADS TO HEAT_
~~:H~~~ LENGTHS -
.
'"
=>
c
~
~~ ["-..
1.5~r-31B"
SINK WITH LENGTHS
AS SHOWN
........
--
'" 1.
6-3/;::-"
-'1- ....... r--... r......1 I"'--.... ......... r-...
~
~
2-L~
-- r...... "
r--... """- ~
r..... ....... r--.........
'"r'--- r--.
:zw 1. 5/B·;-.......
~ r--... t-.... ~ 1.0
'" ........... r--... "- '"
............. r...... ~ i'.........
ffi o.8 ffi
>
'"S 0.4
t--.. ~~
r-........: ~
>
'"
s 0, 5 =-'...... ~ ~
~
~~
~ ~
0
50 60 70 BO 90
TL, LEAD TEMPERATURE (DC)
100 110 120 130 140 '"""" 150
0
50 60 70 BO 90 100. 110 120
TL, LEAD TEMPERATURE (DC)
130
"
140 150
FIGURE 8 - 1/8" LEAD LENGTH. VARIOUS LOADS FIGURE 9 - 1/8" LEAD LENGTHS. VARIOUS LOADS
,.a: 2,B
I(PK) =7T (~ESISTlh/INDIUCTlvk)
,.
a: 2,B
.......... ,
S
!;;
2.4 ......... ........
......... ..........
I(AV) $
iii 2,4
...... ......... 2,.010
...... ~O
" "de
w
. .......... ,~
.
'"~ L""--. IO""i-..... t-....
'" ""-
-- --
~ 2.0 2.o ~
........ K r-... .....
"''" .....,,,,,,,-.....
=>
c I--I(PK) =20 ......
c ............ t'-.. ::-....
a:
~
1.6 10
.......... i'" 1.
61--1(AV) ............. ~ "-
'"
:z 1.2
~ .......... ~
~ 1.2 ............... ~
........... ....... -...;: --..::: ......
........
w
",. ..... ...... ~ ~
ffi O.B
~~
B
~
~"-
>
~ ~
,
<[
- 0,4 4
~ ~
} 0
50 60 70 BO 90 100 110 120
TL, LEAD TEMPERATURE (DC)
130 140
" 150
0
50 60 70 BO 90 100 110 120
TL, LEAO TEMPERATURE(DC)
130 140 150
FIGURE 10 - PRINTED CIRCUIT BOARD MOUNTING. FIGURE 11 - PRINTED CIRCUIT BOARD MOUNTING.
VARIOUS LOADS VARIOUS LOADS
1.4 , 1.4
........ I
1.2 r--... 1,2 ........
I""-....t-....
c
'"~
r......
...... t--.. <:
RESISTIVE·INOUCTIVE c
'" r-...... -.........: r-... "I---de
"""
LOAO
1.0 ~ 1.0
:5 a: ......... ....... ...... BJA =850 /W- I - - ~s: ,. !"-.. --.....;: ...... K BJA = 650C/W- I - -
~~ 0.8
....... ............... ...
~S 0.8
.......... ~
-. r- ......... ~ ..........
-,...,r......
1--...
..........
~~ r-......
~!E ....... ~
~~ ~.6 CAPACITIVE LOAD
~
:::-... r-. ><-
wW
~~ 0.6
CAPACITIVE LOAO
I(PK) = 2,0 10 5,0' ~ ~
"-
~B I(PK) = 5.0"- ~~
S ..
~
IIAV)- 10' , . / ~ ~......
~ 0.4 I(AV) 10 ....... ~ 0,4 20
~~
~
20 , --.;: ~ ~
0,2 , ...... 0, 2
~
,
o
50 60 70 80 90 100 110 120
TA, AMBIENT TEMPERATURE (DC)
130 140
.........
150
o
50 60 70 BO 90 100 110 120
TA, AMBIENT TEMPERATURE (DC)
130 140
"
150
1-113
1N4933 thru 1N4937, MR2271 (continued)
~0.03 /
V V "
'"~ 0.02 /'
10
V ......... V
to-
0.0 1 o
0.05 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 100 200400 10002000 5000 o 1/8 114 3/8 1/2 5/8 3/4 7/8
I. TIME 1m,) LEAD LENGTH (INCHES)
NOTE 1 NOTE 2
FUL tp_
PPk
1----..----1
Ppk
TIME
DUTV CYCLE, 0 =tp/ll
PEAK POWER, Ppk, is peak of an
equivalent square power pulse.
Data shown for thermal resistance junction-to-ambient (BJA) for the
mountings shown is to be used as typical guideline values tor preliminary
engineerillg or in case the tie point temperature cannot be measured.
TYPICAL VALUES FOR (JJA IN STILL AIR
LEAD LENGTH, L (IN}
To determine maximum junction temperature of the diode in a given situation,
1114 1,/2 I 314
MOUNTING
the following procedure is recommended METHOD 1/8 ROJA
I 65 72 82 92 c/w
The temperature of the case should be measured using a thermocouple placed
on the case at the temperature reference point (see Note 31. The thermal mass
2 7. 81 9t 101 °C!W
3 .0 °C!W
connected to the case is normaliV large enough so that it wilt not significantly
respond to heat surges generated in the diode asa result of pulsed operation once MOUNTING METHOD 1 MOUNTING METHOD 3
steady-state conditions are achieved. Using the measured value of TC, the junction
temperature may be determined by:
TJ=TC+""TJC
r'=-J t--'=i
w~
P. C. Board wilh
1-1/2" x 1·112" copper surface
where"" TJC is the increase in junction temperature above the case temperature.
It may be determined by: MOUNTING METHOD 2 ~LJ=3/8" rT
~:. II~
tlTJC"'Ppk 'ROJC 10+(1- 0)' r(tt +Ip)+r(tp) - r(ttlJ
where
rhl =normalized value of transient thermal resistance at time, t, from Figure
3, i.e.:
r (tl + tpl '" normalized value of transient thermal resistance at lime t 1';' Ip Vector pin mounting Board Ground -:
Plane
1-114
1N4933 thru 1N4931, MR2211 (continued)
j
,.;::
w 0.3 -V~r<1.L
_ TJ<250C
~
w
20
~
~ TJ < 25°C
ffi o.2 / g t"-.. ............
o> /' ~
c:§ 10
1ll z
0:
Q
0:
V ~ 7. 0
........
~ O. 1
~
0:
~ a 5.0
~ 0.07
0.05
L"
V
3.0
"
0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 5.0 10 20 50 100
IF. FORWARO CURRENT (AMP) VR. REVERSE VOLTAGE (VOLTS)
.3 1.0
IF~ < 20lA
w
~
5 o.5
V
~ ~V V
~ 0.2
v
.~ O. I ~ k' V
> 10 A .
8
~ 0.05 5.0A
<i. I,q V )
o
0.02 I..e: r::;:. v I\A
1-115
lN4933 thru lN4937, MR2271 (continued)
RECOVERY TIME
.,
In
CONSTANT
VOLTAGE SUPPLY
using IF '"' 1.0 A, VA '" 30 V. In order to cover all circuit
conditions, curves are given for typical recovered stored charge
versus commutation di/dt for various levels of forward current
RIPPLE" 3 mVrms MAX and for junction temperatures of 2So C, 7So C, 1000C, and
lOW
30 Vdc NON.INDUCTIVE C, lSo"C.
CONSTANT VOLTAGE 1.0,uF
To use these curves, it is necessary to know the forward
SUPPLVo-:-+_ _~--,---,-_-+-____-+30::0:..:V-+_--o
current level just before commutation, the circuit commutation
Zout'" !Y2nMAX, di/dt, and the operating junction temperature. The reverse re-
MINIMIZE ALL LEAD LENGTHS
DC t02 kHz covery test current waveform for all Motorola fast recovery
A - TEKTRONIX 545A, K PLUG IN
PRE·AMP, P6000 PROBE OR EQUIVALENT
R2 - TEN·' W, 10 n.
1% CARBON CORE rectifiers is shown.
IN PARALLEL
Rl - ADJUSTED FOR 1.4 nBETWEEN
POINT 2 OF RELAY AND RECTIfiER TA" 25 ~lgoC FOR RECTIFIER
INOUCTANCE "" 38 ~H
J:JII
From stored charge curves versus di/dt, recovery time It rr '
difdt ADJUST
T1 and peak reverse recovery current IIRMIAEC)) can be closely
T2 approximated using the following formulas:
120VAC 03 Q J1/2
60 Hz 'IPK) ADJUST OUT. 1" = 1.41 )( [ di/:t
1:1
RI" 50 Ohms
C' +
., IAMIAEC) '" 1.41 x [QA x dUdt] 1/2
R2 =2500hms
01'" lN4723 01
02" lN4001
03·IN093_
SCRI" MeR129·IO CURRENT
C'''O.5to50"F Tl" Vanac Adjusts I(PKI anddlldl VIEWING
C2 "<4000.uF T2 = 1:1 RESISTOR
1I '" 1.0 - 27 IIH T3= 1;1\10 trigger circuit)
FIGURE 23 - TYPICAL
REVERSE LEAKAGE FIGURE 24 - NORMALIZED REVERSE CURRENT
TJ=150DC
I
r-- - rVR =400 V
./
TJ,100DC
1
TJ = 75DC V
1
I
TJ = 25 DC
V
1 10-2
100 200 300 400 500 600 700 ~ ~ ~ W W M W ~ 100 lW I~ 1~ ~ lW1W
VR, REVERSE VOLTAGE (VOLTS)
TJ,JUNCTION TEMPERATURE (DC)
1-116
2-1
2N ... JEDEC REGISTERED
DEVICE SPECIFICATIONS
2-2
2N 173 (GERMANIUM)
2N 174
(GERMANIUM)
2Nl100
2N1358,A
MAXIMUM RATINGS
2-3
2N174, 2Nll00, 2N1358 (continued)
ELECTRICAL CHARACTERISTICS
Chlracteristic Symbol Minimum Typical Maximum Unit
Collector-Base Cutoff Current ICBO j!.A
2N174 - 100 -
(VCB '" 2 yolts) 2NllOO
2N1358
-
-
100
100
-
200
Collector-Base Cutoff Current ICBO mA
(VEB = 1.5 Yolts, VCB = 80 yolts) 2N174 - 2.0 8.0
100 2NllOO - 2.0 8.0
80 2N1358 - 2.0 8.0
Emitter-Base Cutoff Current lEBO mA
(VEB = 60 yolts) 2N174 - 1.0 8.0
80 2NllOO - 1.0 8.0
60 2N1358 - 1.0 B.O
Collector-Base Cutoff Current I CBO mA
(V CB '" 80 Yolts, 71 0c) 2N174 -- - 15
100 2NllOO - 15
60 2N1358 - 4.0 6.0
Emitter-Base Cutoff Current lEBO mA
(VE~ = 30 Yolts, 71°C) 2N1358 - 4.0 6.0
Collector-Emitter Voltage BV CES* Vdc
(IC = 300 mA, VEB = 0) 2N174 70 -- -
2NllOO
2N1358
80
70 -
--
Collector-Emitter Voltage BVCEO* Vdc
--
(Ic = 1.0 amp, IB = 0)
1.0 amp, IB = 0
2N174
2NllOO
55
65
-
-
300 mA, IB = 0 2N1358 40 - -
Floating Potential V EBF yolt
(IE = 0, VCB = 80 yolts) 2N174 -- - 1.0
lOO
80
2NllOO
2N1358 - -
0.15
1.0
1.0
Current Gain hFE -
(Ic = 1. 2 amp, VCB = 2 yolts) 2N1358 40 55 80
(IC = 5 amp, VCB= 2 yolts) 2N174 25 - 50
2NllOO 25 - 50
2N135B 25 35 -
(Ic = 12 amp, VCB = 2 yolts) 2N174 -- 20 -
2NllOO 20 -
Base-Emitter Voltage VBE Vdc
(Ic = 1. 2 amp, VCB = 2 yolts) 2N1358 - 0.35 0.5
(IC = 5 amp, VCB = 2 yolts) 2N174
2NllOO
-- 0.65
0.65
0.9
0.9
2N1358 - 0.65 0.9
Saturation Voltage VCE(sat) Vdc
(Ic = 12 amp, IB = 2 amp) 2N174
2NllOO
-- 0.3
0.3
0.9
0.7
2N1358 - 0.3 0.7
Common-Emitter
Cutoff Frequency fae kHz
(Ie = 5 amp, VCE = 6 yolts) 2N174
2NllOO
- 10 -
Common-Base
Cutoff Frequency fab kHz
(lE.= 1 amp, VCB = 12 yolts) 2N1358 100 - -
Rise Time ("on" Ie = 12 Adc, tr j!.s
IB = 2 Adc, VCE = 12 yolts) - 15 -
Fall Time ("off" IC = 0, tf j!.s
VEB = -6 Yolts, REB = 10 ohms) - 15 -
* In order to aYoid excessive heating of the collector junction, perform test by the sweep method.
2-4
2N174, 2Nll00, 2N1358 (continued)
'0
,/
V -". i--"
..,,'" .0 J
(j,
II · ~K
~ r-
" IO'C
I 1. 'l
'"
2S·C
80'~""
~
•
/I
~
_~O'C
i.. 4
I i
.I / j
//1/
'/
11 /~
rIJ ,/ ./
00 0.45 0.6 '.0
0.15 0.3 0.75 0.2 0.4 0.' 0 .•
Ville. lASE VOLTAGE (VOLTS)
170.W~r I
hl
"\
POWI!R OISSIPATlON AT I\.
251tAIl TEMjRAyRE
""
I}I
,,
""'
r-
I
~
~
B
O. S
2
1
l70·WATT /
POWER1lISSIPATION AT
2SoC CASE TEMrERAjURE
'"/ /t--.
"""
de/"
--
'"t\. \ \
-\....
0.5 c 0.4 ,
T~
0.4
0.3
O.l lOO'V. 8 mA
TO IOV. SmA (2NIIOO ONLY)
0.2 -rrrll~~\m~EO O. 2 WITH BACK 81AS APPLIED
tR!LSE f~ ON~Yl ~ r- .\
(iULSE tURVjS ONYI't--
-\
O.I 0 O. I
o 10 20 lO 40 50 60 70 80 90 100
COUECTOtI-EMITTER VOLTAGE (VOLT$) COLLECTOR.£MITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate le- (Duty cycle of the excursions make no significant
Vell: limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-5
2N176 (GERMANIUM)
2N669
CASE 11
(TO-3)
MAXIMUM RATINGS
\ \ ~
\1\ r 5m,
OR LESS
2N176
2N669
=
-
The Safe Operating Area Curves indicate
Ie - VCE limits below which the device will
not go into secondary breakdown. Collector
load lines for specific circuits must fall
do within the applicable Safe Area to avoid
0.5 causing a collector·emitter short. (Case
D4
temperature and duty cycle of the excur-
OJ sions make no significant change in these
safe areas.) To insure operation below the
02 maximum TJ, the power-temperature de-
rating curve must be observed for both
steady state and pulse power conditions.
0.1
o 10 20 30 40 50
COLLECTOR-EMITTER VOLTAGE (VOLTS)
2-6
2N176, 2N669 (continued)
Power Gain dB
OpE
Pout = 2 Watts, VCE = 12 V, Ie = 0.5 Amp,
f = 1 kHz, RS = 10 Ohms, RL = 26.6 Ohms 2N176 34 - 37
2N669 38 - -
Total Harmonic Distortion %
(under same conditions. of power gain) - - 5.0
0... I
/
V .. ,
v: =2 ~lS /
_ 0.11
'\
I· .... /
'\
i U,
0.12
j
/
/
I'\.
! •.•
~ 0.01
0. .: ./
/ "
0.04 /
.... '\
••
•• k'"
~ u u u ~ u
' ... lMIHIIltTEI VOLT_ _IS)
u U U H •o 20 .. eo eo
'\
.00
2-7
2N 178 (GERMANIUM)
2N554
2N555
CASE 11
(TO-3)
~ PNP germanium power transistor for non-critical
power amplifier and power switching applications re-
quiring economical components.
MAXIMUM RATINGS
Rating Symbol 2N:178 2N554 2N555 Unit
Collector-Emitter Voltage VCER 30 16 30 Vdc
50
1\.
1\
POWER-TEMPERATURE DERATING CURVE
""'
"-
1'\
o :0 IU I
,
r\
10o
TC. CASE TEMPERATURE (OC)
I
I
2
•
'I'"
2N555
,..
......
I•
2
,2
•
D.
•0 20 30 . 50
,. •0 20 3D
COLUCTONMlml VOLTAGE (VOLTS)
..
COlLECTO_1TTElI VOlTACE (VOlT$)
The Safe Operating Area Curves indicate le- (Duty cycle of the excursions make no significant
VelD limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TI, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-8
2N 178, 2N554, 2N555 (continued)
ELECTRICAL CHARACTERISTICS ;(TC = 250 C unless otherwise noted)
Characteristic I Symbol IMin I Typ IMax I Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CER Vdc
(IC =330 mAdc, RBE = 100) 2N178 30 - -
2N554
2N555
16
30
-- -
-
Collector-Base Cutoff Current ICBO mA
(V CB =2.0 Vdc, IE = 0) 2N178 - 0.05 -
(VVB =30 Vdc, IE = 0) 2N178 - - 3.0
(V CB = 15 Vdc, ~ = 0) 2N554 - - 10.0
(V CB = 30 Vdc, IE = 0) 2N555 - - 20.0
(V CB = 30 Vdc, ~ = 0, TC = 90°C) 2N178 - - 20.0
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = O. 5 Adc, VCE = 2.0 Vdc) 2N178 15 - 45
2N554 - 50 -
2N555 - 50
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 3.0 Adc, IB = 300 mAdc) - 0.6 -
SMALL-SIGNAL CHARACTERISTICS
Common-Emitter Cutoff Frequency f kHz
oe
(IC =O. 5 Adc, VCE = 12 Vdc, f = 1. 0 kHz ref) 2N178 5.0 - -
2N554 - 6.0 -
2N555 - 6.0 -
Small-Signal Current Gain
(IC =O. 5 Ad':, VCE = 2.0 Vdc, f = 1. 0 kHz ref) 2N178
hfe
- 30 -
-
2N554
2N555 -- 55
55
-
-
Input Impedance h. Ohms
Ie
(IC =O. 5 Adc, VCE = 2.0 Vdc, f = 1. okHz) 2N178 8.0 25 -
2N554 - 25 -
2N555 - 25 -
FUNCTIONAL TESTS
Power Gain GpE dB
(V CE = 12 Vdc, IC = O. 5 Adc, Pout = 2.0 2N178 28 - 33
Watts, f = 1. 0 kHz, RS= 10 Ohms,
2N554 20 35 -
2N555 25 35 -
RL = 26. 6 Ohms)
-
100-
I.... 120
, ~
!
::> 100
20 ~
1.0
f 80
/
.
~
·12 n<'l
.... ,/ !: 60
j: 8
,/
./
40
4
~
2 ~"
0 20
0 o ~
0 10 20 30 40 o 0.2 0040.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VeE. COLlfCTOR·EMIITER VOLTAGE (VOLTS) V. B• INPUT DRIVE VOLTAGE (VOLTS)
2-9
2N242 (GERMANIUM)
2N307, A
CASE1~
(TO_3lI1~
PNP germanium power transistors for general pur-
pose power amplifier and switching applications_
MAXIMUM RATINGS
Rating Symbol 2N242 2N307. 307A Unit
Collector - Base Voltage VCB 45 35 Volts
2-10
2N277 (GERMANIUM)
2N278
2N173
2N1099
~
CASE 5
(TO-36)
i lIIl ~ PNP germanium power transistors for general pur-
pose power amplifier and switching applications. Pow-
er and temperature ratings exceed EIA registration.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
..
50
•,
0
0 ,~
'm, 500,. 250,..s , .. 'm, 500 115 250 I ,,. , '00...
'"''
, .. ,... 500"., 'so ...
\ I\.: ~ ~ ~ ~ ~ :::: ~ ~ V~O:rE'ss
r"
lOoJ.lS 1001"
\ ~100".
'"'"'" t>--.:
~
OR LESS OR LESS OR""
, I" l'- l~ 1\ i' "~ ~ ~~ ~
I
,
4
,
1
,
170·WATT
"
/ J',.
POW£R DISSIPATION AT
250, CASE TE,MPWTj
~
,
170.W... JI
POWER DISSIPATION AT
"T CA'j TEMr'RAy" i)
"\
~
, 170·WATT
POWER DISSIPATION AT
25"C CASE TEMPERATURE
d.
>-
~="'&rSSIPATlON AT
25"C CASE TEMPERATURE
t-...
~I\
1\'
JJ o. d. "
a.
a.: 1---1 1 1 "
t--- TO SOY 8 IlIA TOaDY, 8 IlIA TO SOW,B IlIA
WiTH BACK BIAS APP%I~ "-~
I - - J--. IPUj
HCI ~\ t-- yITH BACK ElIAS APPLIED tURVES jLYl
I-~\
2 wnH 81M APPLIED
1 (FORPULSECORVESOf'Ilj'_ FOIl 'IULS' fU""I' allLt -
a. I-
0 10 20 30 40 so 60 70 0 10 20 30 40 50 60 10 80 90 1000 10 20 30 40 '00 10 20 30 40 50
COWCTOUMITTER VOlTAGE MIlTS) COlLECTOR.£MIT1'ER VOLTAGE (VOlT$) coutcTOR.£MITT£R VOLTAGE (VOLTS) COWCTOft-EMITTtR VOLTAGE (VOlTS)
The Safe Operating Area Curves indicate Ie - (Duty cycle of the excursions make no significant
V CE limits below which the device will not go. into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-11
2N277, 2N278, 2N173, 2Nl099 (continued)
* To avoid excessive heating of the collector junction, perform these tests with the sweep method.
2-12
2N277, 2N278, 2N173, 2Nl099 (continued)
""c..
:E
S
....z
.... JI
'1
IX
'"
::>
u
....
0.3
BO°C .... /, J
~ I 'I
25°C .....
~ I
The maximum continuous CD
0.2
~V
..: WC -....,
power is related to maxi-
mum junction temperature ~
by the thermal resistance
factor.
0.1
~V
/: ~ V
This curve has a value of
150 Watts at case tempera-
tures of 25°C and is 0 Watts
at 110°C with a linear rela-
tion -between the two tem-
peratures such that:
0
o 0.2
- t...:::: ~ io""
0.4 0.6 O.B 1.0
VRE' BASE -EM ITTER VOLTAGE (VOLTS)
allowable Pn = 11 0° - Tc
0.5
/ r ~2SoC
4 4
0
u
..2
II 0
u
~
2 //I 2
V / V-- _40°C
,ru '/ V
VV/
~
o "
0 o
o 0.1 0.2 0.3 0.4 0.5 0.2 0.4 0.6 0.8 1.0
I•• BASE CURRENT (AMPERES) VBE• BASE·EMITTER VOLTAGE (VOL TS)
2-13
2N297 A (GERMANIUM)
CdE~
PNP germanium power transistor for military and
industrial power switching and amplifier applications.
Operating temperature range and- collector dissipation
(TO-3) rating exceeds military specifications.
MAXIMUM RATINGS
Amp
Emitter Current ~ 5.0
100
"
"'"
"~'" I'"
"
o
o 20 40 60 80
T C' Case Temperature (oC)
"" 100 110
2-14
2N297 A (continued)
ELECTRICAL CHARACTERISTICS (TC = 250 C unless otherwise notedj
Chancterlstic Symbol Minimum Maximum Ualt
DC Current Transfer Ratio hFE 40 100 -
VeE '" 2V
Ie= 0.5 Adc
DC Current Transfer Ratio h
FE
. .20 - -
VeE = .2 V
Ie= 2.0 Ade
Small-Signal Current Transfer Ratio fue 5.0 - kHz
Cutoff Frequency
VeE = 14 Vde
Ie = 0.5 Amp
Emitter-Base Cutoff Current lEBO - 3.0 mAde
VEB = 40 Vde
IC = 0
Collector"Base Cutoff Current leBO - 200 /LAde
VCB = 2 Vde
IE = 0
Collector-Base Cutoff Current leBO - 3.0 mAde
VeB = 60 Vde
IE = 0
Base Current IB 5.0 12.5 mAde
VeE '" 2 Vdc
Ie= 0.5 Adc
-'
Base Current IB - 100 mAde
VCE = 2 Vde
Ie= 2Ade
Emitter-Base Voltage VEB - 1.5 Vde
VCE '" 2 Vdc
IC = 2 Adc
Floating Potential Vfl 0.18 Vdc
VCB = 60 Vde
(Voltmeter input resistance
= 10 Megohm min)
Collector-Emitter Saturation Voltage VCE(SAT) 1.0 Vde
Ie= 2 Adc
IB = 200 mAdc
Collector-Emitter Voltage BVCEO 40 - Vde
Ie= 300 mAde
IB = 0
Collector-Emitter Voltage BVCES 50 - Vde
IC = 300 mAdc
VEB = 0
High-Temperature Operation
TC = +71°C min
Collector Cutoff Current leBO - 6.0 mAde
VCB = 30 Vde
IE = 0
2N307 (GERMANIUM)
2N307 A For Specifications, See 2N242 Data.
2-15
2N319 thru 2N321 (Germanium)
MAXIMUM RATINGS
2-16
2N322 thru 2N324 (GERMANIUM)
2N508
CASE 31(1)
(TO-S)
Base connected to case
MAXIMUM RATINGS
Frequency Cutoff
VCB ; -5 Vdc, ~; 1 mAdc fa-b
2N322 1.0 - MHz
2N323 1.5 -
2N324 2.0 -
2N508 2.5 -
2-17
2N331 (Germanium)
MAXIMUM RATINGS
2-18
2N331 (continued)
200 ,
JAN ~N331
~ ~
180
f?!
I- 160
'\ \ (he = 0.25°C/mW(max)
~
::;
::! 140 I" \
i!.
~ 120
(hA = 0.375°C/mW(max)
r\. \
'\ \.. \
~ 100
~
CI 80
'\ \
\
~
A.
,;
60
40
20
" ",\
'\ ~
o0 10 20 30 40 50 60
TA • AMBIENT TEMPERATURE (OC)
70 80
"
90. 100
2-19
2N350A (GERMANIUM)
2N351A
2N376A
CASE1~
power switching applications and for power amplifiers
requiring up to 4 watts of output power at relatively
~
(TO-3)I low distortion.
MAXIMUM RATINGS
~'~r\.
\,
250C CASf TEMPERATURE
I 2 3 4 !I
0.1
0 10 20 30 40 ~
o
0 W ~ ~ 90
\ ~
COLLECTOR CURRENT (AMPERES) COU£CTOR'[MlmR VOLTAGE (VOLTS) MOUNTING BASE TEMPERATURE (OC)
The Safe Operating Area Curves indicate Ic- (Duty crcle of the excursions make no significant
V CD limits below which the device will not go into change In these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum T;r, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-20
2N350A, 2N351 A, 2N376A (continued)
2-21
2N350A, 2N351 A, 2N376A (continued)
4.5 II
I 1I 110
/
2N!7'A~
'- / / I
2N!50 A}
2N!!!1 A ~ /
/ J '/ ~ 120
2N!7' A
'-..j
2N!5IA
'- / // ~ /
I '// '-2N!50A
ii3 10
I
Vh' ! V
fA v /
,
1.0 40
.5
~~ VCE = 2 VOLTS
/ VCE' 2 VOLTS
o ~ o ....... /
o .2 .4 .6 .1 1.0 1.2 1.4 1.11 1.1 o .2 .4 .• .1 1.0 1.2 1.4 1.6 1.8
VIE' BASE TO EM IlTER VOLTAGE (VOLTS) VIE' BASE TO EMITTER VOLTAGE (YOLTS)
2N375 (GERMANIUM)
2N618
2N1359
2N1360
2N1362 thru 2N1365
CASE~
(TO-3)
PNP germanium power transistors for general pur-
pose switching and amplifier applications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
2-22
2N375, 2N618, 2N1359, 2N1360, 2N1362 thru·2N1365 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25 0 C unless otherwise noted)
(V CS =75V, IE = 0)
(VCS" 100 V, IE" 0)
2N1362, 2N1363 --
--
--
--
3.0
20.0
------
(VCS = 50 V, IC = 0) 2N1359, 2N1360 -- 1.25
(VCS = 100 V, IC = 0) 2N1362, 2N1363 -- 1.25
(VCS = 120 V, IC " 0) 2N1364, 2N1365 -- 1. 25
2-23
2N375 (continued)
POWER-TEMPERATURE DERATING CURVE
120 The maximum continuous power is
~
;;
related to maximum junction tempera-
! 110
.....
I'..... ture, by the thermal resistance fac-
tor. For d. c. or frequencies below
~
100
.~
.~
80
" 25 cps the transistor must be operated
within the constant Pn = Vc x Ic
is
.
. '"
60
BASE-EMITTER VOLTAGE versus COLLECTOR CURRENT CURRENT GAIN versus COLLECTOR CURRENT
140 r--...,..--,......-..,.---,---,......-...,..-......,
0:;
1.5
Ve~ = 2 vi
~ 120 t---f~-+.--+--+---+--+--i
/2NI3~0
0
...
~
z \
'"~ ~ 100 1----+-~.t_--1 2N618 --I---+---i
0
>
... ~ 2N1363
...'" III I"' 2N1365
~~
~
:i
~ 0.75
(I)
80
60 1---~~-~--+---:~~-+--4--~
'''"'
"";.,
CD
,:
2NI359~~ .......................
40 -·2N375 Y ............
2N1362
2N1364
I --~
! -- __
20
o 0~--~--~--~----~--~----~~
o 0.5 1 1.5 2 2.5 3.5 0.5 1 1.5 2 2.5 3.5
Ie, COLLECTOR CURRENT (AMP) Ie, COLLECTOR CURRENT (AMP)
2N1362,2N1363 SAFE OPERATING AREAS 2N375, 2N618
20 20
M~X PEA~ ~AxlpEA~ I
Im~ !
~~s
I I
Ie 5ms Ims I
I
5ms 5bo
./ \
e
1\ II .A'~I
10 10
250~s 250~s
, ,
, ,
I'\. ...-- OR LESS
'\. \.\ OR LESS- "'\. ~
"- \ \
'\. "- \\ 5
4 \ \. \l\ 4
I\, \..
0::
::I! \ \ "- \. ~\ 0::
I'>.. 1\ \ \\
,coy
3 ::I! 3
'->
$
\
\ I~ ~
$ ........ ......... '\
t-
....
Z
2 I, "'"
..... ...a:
t-
Z
2 Ie MAX CONT. /
V\ t.....
'"'"::>u
'"0
I-
...
....
U 90.wL ~
............
N t"
'"::::>
'-'
a:
0
.........
t-
U
9LJT V ~~ '" ~ i"'-
...
0
POWER DISSIPATION
25°C CASE TEMPERATURE ... 0
POWER DISSIPATION
25°C CASE TEMPERATURE
......
u '-'
0.5 / ....... 0.5 "- .........
0.4 de / I"'-.. 0.4 J{
0.3
"r-.., I "'\
0.3
I
0.2 TO 75V, 3 mA
0.2
~ ~
T090V,3mA - WITH BACK BIAS APPlI=i=
WITH BACK BIAS APP~~ (PULSE CURVES ONLY)
(PULSE CURVES ONLY)
0.1 L J 1 0.1 I I III
o 10 20 30 40 50 60 70 80 o 5 10 15 20 25 30 35 40 45 50 55 60 65
COLLECTOR·EMITTER VOLTAGE (VOLTS) COLLECTOR·EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate I c - (Duty cycle of the excursions make no significant
V CE limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-24
2N3 76 A(GERMANIUM)
For Spe~ifications, See 2N350A Data.
CASEll~.·
.. PNP germanium power transistors for general pur-
(10-3)1 ~ pose power amplifier and sWitching applications.
MAXIMUM RATINGS
Emitter-Base Voltage
-
VEB - - - 10 25 Vdc
2-25
2N378, thru 2N380 2N459. 2N459 A (con.tinued)
ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC CHARACTERISTICS
Common-Emitter Cutoff Frequency f kHz
(Ie
(IC = 1.0Adc, VCE = 2.0 Vdc) 2N378-2N380,2N459 5.0 -
(IC =2.0Adc, VCE =2.0Vdc) 2N459A 5.0 -
2-26
2N381 thru 2N383 (GERMANIUM)
2N2171
CASE31m\
(TO-S)
PNP germanium transistors for small-signal audio
amplifiers, Class B push-pull output stages and medium-
speed switching circuits.
Base connected to case
MAXIMUM RATINGS
Collector Dissipation PD
TA = 25°C 225 mW
derate 3.0 mW;oC
TC = 25°C 500 mW
derate 6.7 mW;oC
2-27
2N381 thru 2N383, 2N2171 (continued)
Output Capacitance
(Ie = 1 mA, VCB = -6V)
Cob --- 20 - -- pF
Noise Figure NF dB
(Ie = 1 mA, VCE = -6V, Rg = 1 kc, f = 1 kHz)
2N381 - -- 6.0 -- -
2N382 -- - 5.5 -- --
--
2N383 -- - 5.0
2N2171 - -- 3.5 - --
Cutoff Frequency fab MHz
(IC = 1 mA, VeB = -6V)
2N381 --- 3.0 - --
2N382
2N383
------ 4.0
5.0
-- -- --
2N2171 - -- 7.5 ---
2-28
2N398 r 2N398 A(GERMANIUM)
MAXIMUM RATINGS
2-29
2N398 (continued)
POWER - TEMPERATURE DERATING CURVE DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
Vt'F. =O.35V
200 70
ISO
60
160
~::l
150
'"'-
140
" i
0 50
~
z:
0
120
~
r'\
2N3*
~
:ri
~
40
\
~
i:i
Q
100
SO ~
....
i'"
u
30 I"r--... ......
~ ~ "'- ........
U
Q
~ 60 "" 20
~
40
...... ~39S r'\. ~
r-- r-- r-
20
i'- f'\. 10
o
t'.. r-... ~ o
o W M W U ~ ~ ro w ~ ~ o 20 40 60 SO 100 120 140 160 ISO 200
TA, AMBIENT TEMPERATURE (OC) I,., COLLECTOR CURRENT (MILLIAMPERES)
LARGE SIGNAL CURRENT GAIN (H FE ) versus TEMPERATURE OUTPUT CURRENT versus BASE·DRIVE VOLTAGE
(Normalized to 2SOC Value; VeE =O.3SV) (VCE=-IV)
200 260
ISO / 24 0 II
V 22 0
/
160
V ~ 200
1
140 = L
1/1 Ic= mA ~
:3
ISO
II
-
160
120
~ )
-- / 140
5~ /
100
~ L Ic- 50~A 120
80
./ u
100 /
- -----
D::
V § I
::j 80
60
'"
u
60 L
40
40 /
L
--
20 20
o o
V
-60 -40 -20 +20 +40 +60 +SO +100 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 O.S
TEMPERATURE (OC) V.,,, BASE·EMITTERVOLTAGE (VOLTS)
2-30
2N404 (GERMANIUM)
2N404A
PNP GERMANIUM
SWITCHING
PNP GERMANIUM SWITCHING TRANSISTORS TRANSISTORS
r;:D'35~
*MAXIMUM RATINGS
nii*
Rati"g Symbol 2N404 2N404A Unit
Collector-Emitter Voltage 24 35 Vde
Collector-Base Voltage
VCES
VCB 25 40 Vde l
Emitter-Base Voltage VEB 12 25 Vde
Collector Currant - Continuous IC 150 mAde
g:m~LO.029
Emitter Current IE 100 mAde
-II'-~
i: ~.".. ~,/
Pin 1. Emitter
Total Device Dissipation @TA ~ 25°C Po 150 mW
Darate above 250 C 2.0 mW/oC A
/\&m D•D2B
45 0 T.P.
Total Device Dissipation @TC • 25°C Po 300 mW --L
Derate above 250 C 4.0 mW/oC
Operating and Storage Junction TJ,Tstg -65 to +100 DC
Tamporatura Range
·Indlcates JEDEC Registered Data.
A1IJEDECTQ·5dimensionsandnotesapply.
CASE 31 (1)
TO-5
Collector Connected to Case
2-31
2N404, 2N404A (continued)
*ELECTRICAL CHARACTERISTICS ITA = 2SOC unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-B_ Breakdown Voltage BVCBO Vdc
(lc = 20 "Ado, IE - 01 2N404 25 - -
2N404A 40 - -
Emittar-B_ Breakdown Voltage BVEBO Vdc
!IE - 20 "Ado, IC = 01 2N404 12 - -
2N404A 25 - -
Punch-Through VoltageOl Vpt Vdc
(VEBfI-1.O Vdcl 2N404 24 - -
2N404A 36 - -
Eminer·Basa Floating Potential VEBII Vdc
(VCB = 35 Vdc, IE = 01 2N404A - - 1.0
Collector CUtoff Current leao ,.Ade
(VCB - 12 Vde, IE = 01 _. O.B 5.0
(VCB = 12 Vdc, IE =0, TA =aOOcl - 20 90
Emittar Cutoff Current lEBO - 0.5 2.5 "Ade
(VEB = 2.5 Vdc, IC =01
ON CHARACTERISTICS
DC Current Gain hFE -
(lC = 12 mAde, VCE =0.15 Vdel 30 80 -
!lC = 24 mAdc, VCE =0.20 Vdel 24 90 -
Collector-Emitter Saturation Voltage VCE( ..tI Vde
(lC= 12 mAde, IB - 0.4 mAdel - 0.09 0.15
(lc = 24 mAde, IB ='1.0 mAde I - 0.09 0.20
Base-Emitter Voltage VSE Vde
!lC - 12 mAde, IB - 0.4 mAdel - 0.27 0.35
!lc = 24 mAde, IB = 1.0 mAdel - 0.30 0.40
SMALL-5IGNAL CHARACTERISTICS
Alpha Cutoff Frequency Ihfb 4.0 25 - MHz
!IE = 1.0 mAde, VCB = 6.0 Vdel
Output Capacitance Cob pF
(Vca
(Vca
= 6.0 Vde, IE = 0, I = 1.0 MHzl
=6.0Vde, IE = 1.0mAde,l= 2.0 MHzl
2N404
2N404A
-- 8.0
8.0
20
20
I nput Impedance hie - 3.6 - kohms
(lC = 1.0 mAde, VCE = 6.0 Vde, f = 1.0 kHz!
Voltage Feedbaek Ratio hre - 8,0 - X 10-4
!lC -1.0 mAde, VCE = 6.0 Vde, I = 1.0 kHzl
Small-Signal Current Gain hie - 135 - -
!lC = 1.0 mAde, VCE - 6.0 Vde, I = 1.0 kHzl
Output Admittance hoe - 50 - "mhos
!lc = 1.0 mAde" VCE = 6.0 Vde, I = 1.0 kHzl
SWITCHING CHARACTERISTICS
Oeley Time (Figure 11 ... - 0.07 - ...,..
Rise Time (Figure 11 tr - 0.12 -
Storage Time (Figure 11 is - 0.20 -
Fall Time (Figure 11 tf - 0.10 -
~
,..
Stored aase Charge (Figure 21 Om - 300 1400 --"C
-Indicates JEOEC Registered Data.
(1)V pt Is determined by measuring the emitter-base floating potentia' VEBtl' using a voltmeter with 11 megohms minimum input
Impedance. The collector-base voltage, VeB. is increased until VEBfl'" -1.0 Vdc; this value of VeB '" (V pt + 1).
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT FIGURE 2 - STOREO BASE CHARGE TEST CIRCUIT
INPUT
vout[[l
NOTES: 1. Input pulse supplied by generator with following c, Rise and fall time: 20 ns Max b, Input capacitenee -15 pF Ma.
characteristics: 2. Waveforms monitored on scope with following e. Ri.. time - 15 ns Ma.
a, Output impedance: 50 Ohms characteristics: 3. All rssistors ±.1.0% tolerance.
b. Repetition rate: 1.0 kHz a, Input resistance - 10 Megohms Min
2-32
2N441 (GERMANIUM)
2N442 PNP germanium power transistors for power switch-
2N443 ing and amplifier applications. Power and temperature
ratings exceed EIA registration.
CASE 5
(10-36) ~ .
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case 8JC 1.0 °C/W
(EIA Registered)
Thermal Resistance, Junction to Case 8JC 0.5 °C/W
'"'"
a:
w
s:o 40
....
a.. E I A registered r---,.....
20
o
a..
o , ....~
o 20 40 60 80 100
TC, CASE TEMPERATURE (OC)
2-33
2N441 thru 2N443 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 5.0 Ade, VCE = 2. 0 Vde) 20 - 40
(Ie = 12 Ade, VCE = 2.0 Vdc) - 20 -
Collector-Emitter Saturation Voltage Vde
(IC = 12 Ade, IB = 2.0 Ade) 2N441
2N442
VCE(sat)
-
-
0.3
0.3
--
2N443 - 0.3 1.0
Base-Emitter Voltage VBE Vde
(IC = 5.0 Ade, VCE = 2.0 Vdc) 2N441 - 0.65 -
2N442
2N443
-
-
0.65
0.65
-
0.9
DYNAMIC CHARACTERISTICS
Common-Emitter Cutoff Frequency
(IC =5.0 Ade, VCE = 6.0 Vde)
SWITCHING CHARACTERISTICS
Rise Time tr I1B
(VCE = 12 Vde, IC = 12 Ade, IB = 2.0 Ade) - 15 -
Fall Time tf I1B
(IC = 0, VBE = 6.0 Vde, RBE = 10 ohms) - 15 -
• Pulse Test: Pulse Width" 300 ,,"s, Duty Cycle" 2.0%.
2-34
2N441 thru 2N443 (continued)
-
500rA TJ'25'C
I-
Z
~
400mA ,
-
TJ' 25'C
.0
...... 400 mA ::!IE: 9.0
i" 300 m~
300mA a
IE:
2'J&mA
0
/ 200 mA ~
IU 6.0
V
...J
100 '1'A-:--
...J
8 V l,mA - -
-
/' 9
./jmA
1_ 3.0
.150 mA
3. 0
..- VSE = 0
'IS=~~•
VSEI. 0 -
.l
IS=~
'1'-...,
o
I
0 o 10 20 30 40 50
o 10 20 30 40
VCE. COLLECTOR VOLTAGE (VOLTSI
VCE. COLLECTOR VOLTAGE (VOLTS)
bo~A
I I
0.5
I
~
'"
-'
I
500mA
, TJ' 25'C 0:
! 0.4 I
I
~ 400mA
IU
1/ I 1
Tj- 8O'C,
.I II
1 11
::E 9.0 . / 3OOm~
I-
z
:::l IU 2!i"C,
U
200 mA ::E 0.3
IE:
~ 6.0 ..- . /
:::l
u -4O·c .......
II
IU
...J
...J
lOOmA
IU
~ 0.2
I
/ r
8 -" ../ -50mA ~ /
9
3.0
0.1
V/
'":::..-'"~ /
'VSE'· 0
IS~~,I
./
o ~
o o 0.4 0.6 0.8 1.0
o 10 20 30 40 50 60 0.2
VCE. COLLECTOR VOLTAGE (VOLTS) veE. eASE VOLTAGE (VQLTS)
10 l/ /:V 10.0 I.
0: ..I: ~ '" 0: Tj-SQ'C-"",
VL
/.VI
:;
~ A~ r--.... .... Tj =8O'C « 25'C,
~
I- 8.0
z
IU
IE: A ~ "i'.... 2S'C IU
IE:
8.0
-4O'C "'>i ry V
IE: -4Q'C
"
IE:
:::l
u 6.0
:::l
U 6.0 / "/
IE:
1/ IE:
::u / /11
~ J IU
/ / ,/
~ 4.0 ~ 4.0
9
IJ/ 9
V / /
1/1 V /11' V
2.
0,1. 2. 0
_,V L V
V
,
0 0
o 0.15 0.3 0.45 0.6 0.75 o 0.2 0.4 0.6 0.8 1.0
Ie. 8ASE CURRENT (AMP) veE. BASE VOLTAGE (VOLTS)
2-35
2N456A (GERMANIUM)
2N457A
2N458A
7 AMPERE
PNP GERMANIUM POWER TRANSISTORS POWER TRANSISTORS
PNP GERMANIUM
"MAXIMUM RATINGS
Rating Symbol 2N456A 2N457A 2N458A Unit
Collector-Emitter Voltage VeEO 20 30 40 Volts
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Ves
VES
Ie
IS
-- 40
--.,...-
60
20
7.0
3.0
---
80 Volts
Volts
Adc
Adc
Total Device Dissipation@Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
PD
TJ,T stg
- 85
1.0
_ _6 5 t o + l l 0 _
- Watts
w/oe
°e
I~~
z
0
~ 4.0
'; I ::
v.i(i) 3.0
5S
"'s:
2.6
2.0
~-
1.0
~
0 25 50 75 100 110 125
T, TEMPERATURE (OCI
CASE 11
TO·3
2-36
2N456A, 2N457A, 2N458A (continued)
OFF CHARACTERISTICS
Collector~Emitter Breakdown Voltage BVCEO Vde
(lC = 200 mAde, IB = 01 2N456A 20 -
2N457A 30 -
2N458A 40 -
Collector-Base Cutoff Current ICBO mAde
(VCB= 20 Vde, IE = 01 2N456A - 0.5
(VCB = 30 Vde, IE = 01 2N457A - 0.5
(VCB = 40 Vde, IE = 0) 2N458A - 0.5
(VCB = 40 Vde, IE = 01 2N456A - 2.0
(VCB = 60 Vde, IE = 0) 2N457A - 2.0
(VCB = 80 Vde, IE = 01 2N458A - 2.0
(VCB = 40 Vde, IE = 0, TC = +71 o CI 2N456A - 10
(VCB = 60 Vde,IE = 0, TC = +71 o CI 2N457A - 10
(VCB = 80 Vde, IE = 0, TC = +71 o CI 2N458A 10
Emitter-Base Cutoff Current lEBO 2.0 mAde
(VEB = 20Vde, IC = 01
ON CHARACTERISTICS
DC Current Gain hFE -
(lC = 1.0 Ade, VCE = 1.5 Vdel 40 -
(IC = 3.0 Ade, VCE = 1.5 Vdel 35 -
(lC = 5.0 Ade, VCE = 1.5 Vdel 30 90
(lc = 7.0 Ade, VCE = 1.5 Vdel 22 --
Collector-Emitter Saturation Voltage VCE(satl - 0.5 Vde
(lC = 5.0 Ade, IB = 500 mAdel
Base-Emitter Voltage VBE - 1.5 Vde
(lC = 5.0 Ade, VCE = 1.5 Vdel
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product IT 200 - kHz
(lC = 1.0 Ade, VCE = 2.0 Vdel
I nput Impedance hie - 28 Ohms
(lC = 5,0 Ade, VCE = 1.5 Vdel
2N459I A(GERMANIUM)
For Specifications, See 2N378 Data.
2-37
2N460, 2N461 (GERMANIUM)
MAXIMUM RATINGS
Collector Dissipation PD
at 25° C Case Temperature 500 mW
Derate above 25° C 6.7 mW/oC
at 25° C Ambient Temperature 225 mW
Derate above 25° C 3.0 mW/oC
2-38
2N464 thru 2N467 (GERMANIUM)
MAXIMUM RATINGS
DC Collector Current IC mA
500
Collector Dissipation,.Ambient PD mW
200
2-39
2N464 thru 2N467 (continued)
ELECTRICAL CHARACTERISTICS (continued)
o '\ o
o 10 20 30 40 50 60 10 80 90 100 -60 -40 -20 o 20 40 60 80
Input Current versus Emitter·Drive Voltage Small Signal Current Gain versus Collector Current
(common emitter 1 ....)
2.0
1.8
I III I 200
III rl V
1.6
1.4
2N464 IV ) a
c. 160 "\ Vea = 1 VOLT
2N465
1-1 III I z
~
1\.2N467
~
1.2
1/ r/ V ~
z
.... 12Q "- ~
1.0
I VI
j '"'"::><.>
.8
.6
/ VJ fjC:::
) VI r--
2N466
2N461
.....
...z:;.;;<
.....
.....
80
I--- ,,2N466
1"- ~
"",,2N465
" -'" I"""-- t--
--
.4
~v
i 40 10-
--.....
.2
V I-- r 2j464
.... ~ ~V
o o
o .05 .10 .15 .20 .25 .30 .35 .40 .45 o 10 20 30 40 50 60 10 80 90 100
2-40
499 Germanium PNP high frequency transistors designed
2N for driver applications, small-signal amplification, wide
(2N499JANAVAILABLE) band video amplifiers, and VHF/UHF oscillators.
2N499A
(2N499A JANAVAILABLE)
2N502
CASE 149 2N499. 2N499A
2N502A <TO-l) 2N499JAN. 2N499A JAN
(2NS02AJANAVAILABLE)
2N502B
(2NS02BJAN AVAILABLE)
2N1742
CASE 31 2N502.A.B.
(TO-S) 2N~2A.B. JAN
2N1742
MAXIMUM RATINGS
2N499
2N499 JAN 2N502A,B
Rating Symbol 2N499A 2N502 2N502A.JAN 2N1742 Unit
2N499AJAN 2NS02B JAN
2-41
2N499, A/2N499JAN, A/2N502, A, B/2N502JAN, A, B/2N1742 (continued)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(lC = 2.0 mAde, VCE = 10 Vde, f = 20 MHz) 2N499, A, 2N499, A JAN 120 -
(IC = 2.0 mAde, VCE = 10 Vde, f = 100 MHz) JAN2N502A, B 150 600
2N508 (GERMANIUM)
2-42
2N508A (GERMANIUM)
MAXIMUM RATINGS
2-43
2N508A (continued)
ON CHARACTERISTICS
'DC Current Gain hFE -
(IC = 20 mAdc, VCE = 1. 0 Vdc) 100 200
SMAll-SIGNAL CHARACTERISTICS
'Cutoff Frequency tab MHz
(IE = 1. 0 mAdc, VCB = 5.0 Vdc, f = 1. 0 kHz) 2.5 -
'Output Capacitance Cob pF
(V CB = 5.0 Vdc, IE = 1. 0 mAdc, f = 1. 0 MHz) - 35
Noise Figure NF dB
(IC = 1. 0 mAdc, V CB = 5.0 Vdc, RS = 500 ohms, - 5.0
f=1.0kHz, Ilf = 1. 0 Hz)
'Iodicates JEDEC Registered Data.
2-44
2NS24 thru 2NS27 (GERMANIUM)
CASE 31(1}
(TO-S)
MAXIMUM RATINGS
2-45
2N524 THRU 2N527 (continued)
2-46
2N524 thru 2N527 (continued)
f =1 kHz,BW = 1 Hz
Small-Signal Short-Circuit h fe
Forward-Current Transfer Ratio
'YCE =5 Vdc, IE = 1 mAde, f = 1 kHz) 2N524
2N525
18
30
41
64
-
2N526 44 88
2N527 60 120
0.0001
,. ..".
Et~~
'"~
;
0
II ===+=+==+=1
I'" I I I
1000
TIME (HOURS)
l==::::+:=:+:::+A
2000 1000
TIME (HOURS)
2000
COMMON EMITTER INPUT VOLTAGE versus COLLECTOR CURRENT D-C BASE CURRENT GAl Nversus COWClOR CURRENT
0.7 ...--r--r---,..---.,.-...,....--,....--r--r"'--r----. 140
5!
I
Yc.=-l Y
.!
i 120 r-- T. = 25°C
'"
Ii;\!
-- -~
100
...... /'
z 80
II!
'"
::0
U ~
;' I'--- 2N526(A)
g /' 2N525(A)-
8 40
::: /2N524(A)-
,: j /'
0.1 1--+-+---11---+--+---1--+--+--+---1 20
o O~-2~0--~~~~6~0--8~0--~10~0~12~0~1~~~I~~~-18~0~2~00 o
o ~ ~ ~ 80 ~ rn ~ ~ ~ ~
2-47
·2N554 (GERMANIUM)
2N555 For Specifications, See 2N178 Data.
MAXIMUM RATINGS
• Level 3 reliability data shown for information only. Qualification tests will be initiated upon established
customer requirements.
2-48
JAN 2N559.1, .2, -3 (Continued)
RELIABILITY RATINGSt
Est. Max
QUALITY LEVELS (LTPD) RELIABILITY LEVELS Failure
Maximum failure rate (x) during first Rate in
1000 hours with 90% confidence. Conserva-
Relia- tively
Operation Life Storage Life Designed
bility
Level PD = 150 mW Equipment
Indi- Group A Group B IE=50 mA TA = 100°C TA=150°C %/1000
cafor Subgroups Subgroups TA = 25°C Hrs
Major Minor Major Minor Major Minor Major Minor Major Minor
Defect Defect Defect Defect Defect Defect Defect Defect Defect Defect
(1) 3.0 5.0 10 20 10 20 10 20 20 - 0.1
(3)* 1.0 2.0 3.0 7.0 2.0 5.0 0.2 0.5 1.0 3.0 0.001
t This table relates the statistical sampling requirements in the specification to the reliability levels for the
transistor.
* Level 3 reliability data shown for information only. Qualification tests will be initiated upon established
customer requirements.
TABL.E I - GROUP A INSPECTION
LTPD for Limit
MIL·STD·7S0 Respective Reliability Lev.1
Examination or Test Symbol Unit
Method Total CD Maior Requirement Lim~ Defetl (Iassilitation
(1) (2) (3) (1) (2) (3) Min Max Minor Major
SUIGIOUP 1
V18ual and Mechanical Examination 2071 10 7
• 7 5 3 - - - - - -
SUBGROUP 2 5 3 2 3 1.5 1.0
.
III
Fall Time
(Vee.' -3.5 Vdc. II . -I mAde,
3251
Condition A
.. - 100 > 100 to 120 >120
n.
<D Total is defined as the sum of the major and minor defectives.
2-49
JAN 2N559·1, ·2,·3 (Continued)
SUBGROUP 2 3 1.5 1
End.Point Tests:
Emitter-Base Cutoff Current 3061 lEBO /lAde
(VEB" -1 Vdc) Condition D 10 >10 to 20 >20
SUBGROUP 3 20 15 7 10
Tension 2036
Condition A
Solderability 2026
SUBGROUP 4 20 15 7 10
Shock 2016
(Non-operating; 5 blows: 1500 Gin
Orientations Xl' Y I • Y2' and Zl
(total = 20 blows)
Constant Acceleration 2006
(20.000 G, Orientations Xl' YI' Y2 ,
and Zl)
Vibration Fatigue 2046
(No bias applied)
Vibration, Variable Frequency 2056
(1 cycle each in Orientations Xl. YI.
and Zl)
End-Point Tests: Same as Subgroup 2
SUBGROUP 5 20 15 7 10
SUBGROUP 6 '0 - - 10 - -
High-Temperature LiCe (Non-operating) 1031
(Tstg = 100:~ 0c 2N559 (t.)ONLY
End-Point Tests: Same as Subgroup 2
SUBGROUP 7 - 20 3 - 7
SUBGROUP. 20 15 5 10
NOTES: CD Total 18 defmed as the sum of the major and mmor defectives.
® Rejects from prior electrical-test samples from the same lot may be used {or this test.
2-50
JAN 2N559.1, .2,·3 (Continued)
DC Current Gain
(Ie = -10 mAde, VCE = -0.5 Vdc,
3076 hFE
10 - 8 to<10 <, -
TA = _55°C)
SUBGROUP 3 20 15 7 10 5 3
SUBGROUP 4 - 20 10 0 5
Base-Emitter Saturation Voltage 3066 VBE(sat) 0,31 0.47 0.25 to <0.31 <0.25 Vdc
{IC '" -10 mAde, ~ '" -0.4 mAde} Condition A and and
>0.47 to 0,55 >0.55
CeE '" 150 pF', GCE .. 2 :g.5 pF, 10 < 10 and >45
3'
CBE =: 2 !O,5 pF) >35to45
2N618 (GERMANIUM)
2-51
2N650A, 2N650 (GERMANIUM)
2N651 A, 2N651
2N652A, 2N652
'MAXIMUM RATINGS
Rating Svmbol Value Unit
Coliector·Emitter Voltage (RBE = 10 k ohms) VCER 30 Vdc
CollectorwBase Voltage Vce 46 Vdc
Emitter-Base Voltage VEe 30 Vdc
Collector Current - Continuous (1) IC 500 mAde
~:l;iDlA~
1/16" ±. 1/32" from case.
(1) Limited bV power dissipation.
~DlA 0.240
~.~~=tI
'THERMAL CHARACTERISTICS
Characteristic Svmbol Max Unit
Thermal Resistance, Junction to Case 6JC 0.250 DC/mW
Thermal Resistance. Junction to Ambient 8JA 0.375 DC/mW 0.019
1.5
Hi~
*Indicates JEOEC Registered Data.
"
'\. 'JC = 0.25DC/mW
."-
"\..
C
~
80
'JA = 0.375 DC/mW"'-
"- Pin 1. Emitter
~
"""
Z.8s.
60 .......... 3.Collector
~ 40 ........ ~
20
o
20 30 40 50 60
TA,AMB1ENTTEMPERATURE (DC)
70 80 90
'"100
CASE 31 (1)
TO-5
2-52
2N650A,2N650/2N651 A,2N651 /2N652A,2N652 (continued)
*ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
I Characteristic I Symbol Min Max Unit
OFF CHARACTERISTICS
Floating Potential (11 VEBF - 1.0 Vde
(VCB = 45 Vde, IE = 0, voltmeter input resistance ~ 10 megohms)
Collector Cutoff Current ICER - 600 /lAde
(VCE = 30 Vde, RBE = 10 k ohms)
Collector Cutoff Current ICBO /.tAde
(VCB = 30 Vde, IE = 0) - 10
(VCB = 45 Vde, IE = O) - 50
(VCB = 10 Vde, IE = 0, TA = +71 o C) - 100
Emitter Cutoff Current lEBO - 10 /lAde
(VEB = 30 Vde, IC = O)
ON CHARACTERISTICS
DC Current Gain hFE -
(lC = 10 mAde, VCE = 1.0 Vde) 2N650 30 -
2N650A 33 -
2N651, A 45 -
2N652, A 80 -
Collector-Emitter Saturation Voltage VCE(sat} Vde
(I C = 50 mAde, I B = 2.5 mAde) 2N650,A - 0.250
(lC = 50 mAde, IB = 1.67 mAde) 2N651 , A - 0.250
(I C = 50 mAde, I B = 1.25 mAde) 2N652,A - 0.250
(lC = 100 mAde, IB = 5.0 mAde) 2N650,A - 0.500
(lC = 100 mAde, IB = 3.33 mAde) 2N651, A - 0.500
(lC = 100 mAde, IB = 2.5 mAde) 2N652,A - 0.500
Base-Emitter Voltage VBE Vde
(IC = 10 mAde, VCE = 1.0 Vde) 2N650,A - 0.270
2N651 , A - 0.260
2N652, A - 0.250
SMALL-SIGNAL CHARACTERISTICS
Common-Base Cutoff Frequency f ab MHz
(IE = 1.0 mAde, VCB = 6.0 Vde) 2N650,A 0.75 -
2N651 , A 1.0 -
2N652, A 1.25 -
putput Capacitance (1.) Cob -
25 pF
(VCB = 6.0 Vde, IE = 0, f = 1.0 MHz)
Input Impedance hib 27 37 Ohms
(IE = 1.0 mAde, VCB = 6.0 Vde, f = 1.0 kHz)
Small-Signal Current Gain hfe -
(IE = 1.0 mAde, VCE = 6.0 Vde, f = 1.0 kHz) 2N650, A 30 70
2N651, A 50 120
2N652, A 100 225
Output Admittance (1) hob 0.15 1.0 IJmhos
(IE = 1.0 mAde, VCB = 6.0 Vde, f = 1.0 kHz)
Noise Figure NF - 15 dB
(IE = 0.5 mAde, VCE = 4.5 Vde, RS = 1.0 k ohms,
f = 1.0 kHz, C. f = 1.0 Hz)
(1) Applies only to 2N650A, 2N651A, and 2N652A Devices
* Indicates JEDEC Registered Data.
~:::;
II 1.2 f- TJ: 25'C
~J: 25'~
<! II
~ 1.0 1.0
0
z
on
S
0
VrE1'I ni i lV: \0 v -
ttl
'"<i' 0.7 ~
O.S ......,... ./
<.0 w VBElsatl@ICIIB: 10
<.0 ./.
~
~
~
=>
0.5
" '\ '"
S
0
>
0.6
0.4
V
u
u
0
0.3
1\ 0.2 """
VCEI7tl@IC/IB 10 ./
~ p
0.2 0 IIII
0.5 1.0 2.0 5.0 10 20 50 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
2-53
2N653 thru 2N655 (GERMANIUM)
CASE31(1\
(10-5) PNP germanium transistor, ·for high-gain amplifier
All leads isolated
and switching service in the audio frequency range.
MAXIMUM RATINGS
2-54
2N653 thru 2N655 (continued)
,.,. V V \
VeE" 6 VOLTS :I
'"...
~
~
100
80
r: IE = I MA ~ 120
~
:100
'-
'\ 1\
II.
0 60
;;;
8JA ·0.375"CfI•• C.... ) ~ \
...z ~ 80
~
VeE" I VOLT-
1\
"
40 io'
IE" 50 MA-= ...
'"a:u :!
o
60
ALL TYPES ]\\
'"
A.
20
ALL TYPES .... 40
'\
20 ~
o
-80 -60 -40 -20 0 20
JUNCTIOH TEMPERATURE ac
40 80 80 100
o
o ~ w ~
1
~ ~
AMBIENT OR CASE TEMPERATURE 'C
~ ro ~ ~
" ~
.......
250 180
.
IE
.2N61 ""-I
\;l5; 160
VCO' I VOLT
:I 200
c
I f"-..- 2N653 . 140
L/1
:::;
~ veE' I VOLT ...
-..
~
:I
150
~
z
120
.......
~
=
. 100
....
...
z
JV / .I Z .......... r 2N655
- '"
IE
~ 80
IE
.........
'" ~ '-
100 IE
u
k r--2N654
~~ ~/
:>
IE
....0
u 60
.... 1"-....
U
Q
-.
...u....
...
50
V./
4 O~
l"'-I - 1- 1-_
-
~
0
u 0
2N653- V
o o ..1
o """'"0.2 0.4 0.6 0.8 o 20 40 60 80 100 120 140 160 180 200
BASE TO EMITTER VOLTAGE (VIII VOLTS COLLECTOR CURRENT Ci.) MILLIAMPERES
2-55
2N656 (SILICON)
2N657
*MAXIMUM RATINGS
Rating Symbol 2N656 2N657 Unit
Collector-Emitter Voltage VCEO 60 100 Vde
Collector-Base Voltage VCB 60 100 Vde
Emitter-Base Voltage VEB 8.0 Vde
Total Device Dissipation @ T A - 2SoC PD 1.0 Watt
Derate above 2SoC 5.7 mW/oC
Total Device Dissipation @ Teo:: 25°C PD 4.0 Watts
Derate above 25°C 22.B mW/oC
Operating and Storage Junction TJ,Tstg -65 to +200 °c
Temperature Range
*ElECTR ICAl CHARACTER ISTICS (TA = 25°C unless otherwise noted 1 0335 OIA
0.370 -+---1
Ii
::"wj1=1
QlQ.~ DIA ~ 0.240
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCEO Vde H.·.
lie = 250~Ade, IB = 01
~ILJ
(lC = 100~Ade, IE = 01 2N656 60 -
2N657 100 -
Emitter-Base Breakdown Voltage BVEBO B.O - Vde
liE = 250~Ade, IC = 01
Collector Cutoff Current ICBO - 10 ~Ade
(VCB = 30 Vde, IE = 01
ON CHARACTERISTICS
DC Current Gain(1) hFE 30 90 -
(lC = 200 mAde, VCE = 10 Vdel
Collector-Emitter Saturation Voltage(1) VCE(satl - 4.0 Vde
lic = 200 mAde, IB = 40 mAdel
SMALL·SIGNAL CHARACTERISTICS
Input Impedance(1)
liB = 8.0 mAde, VCE = 10 Vdel
2-56
2N665 (GERMANIUM)
CASE~
(TO-3)
PNP germanium power transistor for driver and
power output amplifier and power switching applica-
tions in military and industrial equipment.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
2-57
2N665 (continued)
hFE.versus TEMPERATURE
200
180
/ le -2A Yco - 2Y /
u
..,
0
160 / ./
-
N
le- 0•5A ...... ./
!C 140 /
......
II!
120 ./ ~
0
';/I. 100
80
-60 -40 -20 o 20 40 60 80 100
Te. CASE TEMPERATURE (OC)
2N669 (GERMANIUM)
2-57A
2N681 thru 2N689 (SILICON)
CME2~
Industrial-type, silicon controlled rectifiers in a stud package
with current handling capability to 25 amperes at junction
temperatures to 1250 C. MCR equivalents available in TO-48
package - i.e. - 2N681 available in T0-48 package as MCR681.
\
2-58
2N681 thru 2N689 (continued)
- --
2N687 300 -
2N688 400
2N689 500 - -
Peak Forward or Rever/3e Blocking Current IORM mA
(T J ; 125°C) 2N681 - 2N684
2N685
IRRM -- -- 10.0
10.0
--- ---
2N686 10.0
2N687 10.0
2N688 8.0
2N689 - - 6.0
Holding Current IH mA
(Anode Voltage = 7 Vdc, Gate Open) - 20 -
Forward On Voltage VTM Volt$
(IT = 20 Adc) - 1.1 1.5
2-59
2N681 thru 2N689 (continued)
,MAXIMUM ALLOWABlE
FORWARD GATE CURRENT GATE TRIGGER CHARACTERISTICS FDRWARD CONDUCTING CHARACTERISTICS
2.0 IGM-2AMP ".
~JOO
3 VOLTS MINIMU
1.0
GATE VOLTAGE
REQUIRED TO ~ 50
z'
.~ .~
TRIGGER
,~
~U!!ITS '" 20
·7
0.5 ::. TYPICAL~ 'I ,,'/ _MAXIMUM
Q;
21
-
.... :i
....=z~
f .. +
AS A TRIGGER CIRCUIT DESIGN CRITERIA
ALL UI'tITS WILl TRIGGER AT ANY VOLTAGE
AND CURRENT WITHIN THIS AREA
~ 10
~
~ 0.2
is
~ 0.1
<.>
i>-I! e
f!!~!:
z!ci!=
~ iii
~II
I- 40 mA MINIMUM
GATE CURRENT REQUIRED
TO TRIGGER ALL UNITS
(l25'C - 2S mAl
o
~ 2.0
::.
Sl 1.0
5.0
I I /
TJ
TJ
12S'C-
2S'C"-
~.05 ~t.
(-6S'C - 80 mAl
z
..2
z
TYPICAL
--------- ;:: 0.5
~~ 0.2
TRIGGER POI,NT MAXIMUM ALLOWABLE FORWARD
GATE VOLTAGE 10 VOLTS
J::. 0.1 II II
o 3 4 5 6 7 8 9 10 O.n , 0.5 1.0 1.5 2.0 2.5,
VGT. GATE VOLTAGE (VOLTS) VT.INSTANTANEOUS FORWARO ON VO LTAGE (VOLTS)
0.25 (TJ = 2S'C - AN,OOE @ 7 VOLTS)
2-60
2N696 (SILICON)
2N697
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCER 40 Vdc
Collector-Base Voltage VCB 60 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Total Device Dissipation @ T A = 25°C PD 0.6 watt
Derate above 25°C 13.3 mWrC
Total Device Dissipation @ TC = 25°C PD 2.0 Watts
Derate above 25°C 13.3 mWrC
Operating and Storage Junction T J' Tstg -65 to +200 °c
Temperature Range
ELECTRICAL CHARACTERISTICS (TA = 25 0 C unless otherwise noted.)
ON CHARACTERISTICS
DC Current Gain.
hFE• -
(IC = 150 mAdc, VCE = 10 Vdc) 2N696 20 60
2N697 40 120
Collector-Emitter Saturation Voltage· VCE(sat)
. Vdc
(IC = 150 mAdc, ~ = 15 mAdc) - 1.5
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product fT MHz
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz)' 2N696 40 -
2N697 50 -
Output Capacitance Cob pF
(V CB = 10 Vdc, ~ =.0) - 35
2-61
2N699 (SILICON)
CASE 79
(TO·39)
Collector connected to casit
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case eJC 75 °C/W
2-62
2N699 (continued)
ON CHARACTERISTICS
DC Current Gain* hFE * -
(IC = 150 mAdc, V CE = l(i"Vdc) 40 120
2-63
2N700,A (GERMANIUM)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Base Voltage VCB 25 Vdc
V
~
- I, @
r- ~.
-6
Ve• Vde
-
C
"'" "
~ 600
~
:;
!!! 20
:.l
co
h••
Vel = -6Ydc
I, =2 mAde
"'" "- z
400 II Veo @ I, =2 mAde
~
10
NOISE FIGURE
I
"-> I''\. i... 200
/
I'
~
"
::>
<>
o
2 10 20 50 100 200 500 1000 " °o 2.0 4.0 6.0 8.0 10 12 14 16
t. FREQUENCY (mHz, I,. EM ITTER CURRENT (mAde)
Ye•• COlLECTOR - BASE VOLTAGE (VOLTS)
2-64
2N700,A (continued)
Collector Cutoff leBO VCB = 6 Vde, IE = 0 All Types - 0.4 2.0 /lAde
Current
VCB =.6 Vde, IE = 0,T A =85 0 C 2N700 - 60 150
2N700A - - 50
Small Signal hfe IE = 2 mAde, VCE = 6 Vde, f = 1 kHz All Types 4.0 10 - -
Forward Current
Transfer Ratio IE = 5 mAde, VCE = 6 Vde, f = 1 kHz 2N700A - - 50 -
IE = 2 mAde, VCE = 6 Vde, f = 200 MHz 2N700 2.5 7 - -
2N700A 5.0 - - -
Input Impedance hib IE = 2 mAde, VCB = 6 Vde, f = 1 kHz All Types - 17 30 Ohms
Base Resistance
I
rb IE = 2 mAde, VCB = 6 Vde, f = 300 MHz All Types - 55 100 Ohms
(neutralized) 2N700A 22 - -
Noise Figure NF All Types - 6.0 10 dB
(neutralized) 2N700A 26 - - dB
2-65
2N702 (SILICON)
2N703
ON CHARACTERISTICS
DC Current Oain'
(IC = 10 mAdc, VCE =5.0 Vdc) 2N702
hFE
. 20 - 60
-
2N703 40 · 100
.-
(IC =10 qlAde, VCE =5.0 Vdc, TA =-55'C) 2N702 12 ·
Collector·Emitter Saturation Voltage'
(IC = 10 mAde, IB =1. 0 mAde)
2N703
V CE(sat)
. 20
.
·
- 0.5
Vde
;2-66
2N705 (GERMANIUM)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Base Voltage VCB 15 Vdc
-
/'
---
I---'
~~ 0.1 5
55·C
O. 4
O. 2 --I-- V
----/
8
~ 'ell, = 10
..,V
O. I
QI O~ 05 I~ 2~ 5 10 20 50 100 ->~ o.1
-75 -50 -25 +25 +SO +75 +100
Ie. COUECTOR CURRENT (mAdel
T•• AMBIENT TEMPERATURE (·CI
2-67
2N705 (continued)
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Input Capacitance
(VBE = 2 Vde)
Cib - 3.5 - pF
Storage Time
(1Jl = 1.0 mAde, 1J2 = .25 mAde)
t
s - 65 100 ns
Fall Time
(IBI = 1. 0 mAde, 1J2 = . 25 mAde)
tf - 70 100 ns
-----
100
~oo
~
z Ie =25 mAde
§ i
-
80 400
:g
z
""~ ....
g 300
v-
--
TA = 25"C
~
/
Q
£'0
;::
111 =41 11 - f:z:
~ R.=IOOn ~ 200
I
~.: I -10 mAde
i VeE= 1 Vdc
40 R,-IK!!_
i TA =25°C
0
- z
~
.i
100
0
10 l~ 20 o 10 20 30 40 50
Ie/I,,, CIRCUIT CURRENT RATIO Ie. COllECTOR CURRENT (mAdel
2-68
2N706 ,A, B (SILICON)
(2N706JAN AVAILABLE)
2N753
\
speed switching applications.
CASE 22
(TO-IS)
Collector connected to case
MAXIMUM RATINGS
·Refers to col/ector breakdowII voltage ill the high current region when R,,. = JOn
2-69
2N706,A,B,2N753 (continued)
SWITCHING TIME TEST CIRCUIT STORAGE TIME TEST CIRCUIT MEASUREMENT CIRCUIT
Type RSampling Resistor
20U
Pulse Volts Pulse Volts
Internal Resistance Internal Resistance
+7V n 20~
UK +5VFl:50~ l50n
~rv~- -I: o-J,JII\r-A,JVv-+--l OV - - - - - ()-"VV'v-'I(VI.';---!.
_4V
2-70
2N707, A(SILICON)
MAXIMUM RATINGS
3:1
50 n Air 50 fl
180 pF 2N707 (Note 1)
Input 2N707A 0.001 /IF
Core Output
4-30
pF -
RFC 0.17
1.8 Ll L2
J.LH
/lH
2)
.01 J.LF
+VCC (Note 4)
Note 1 Heat sink is required.
Note 2 Adjust for Class C operation.
Ll 5 turns #14 wire wound on Note 3 Very High conductance silicon
1/2" diameter. diode.
L2 2 turns #14 wire wound on L1 · Note 4 Adjust VCC for proper VCE
2-71
2N707,A (continued)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IE = 15 mAdc, VCE = 10 Vdc) 70 350 -
Maximum Frequency of Oscillation f
max - 600 - MHz
FUNCTIONAL TEST
Power Output (Figure 1) Pout mW
(VCE = 20 Vdc, Pin = 50 mW) All Types 200 300 -
(VCE = 40 Vdc, Pin = 175 mW) 2N707A 400 - -
100-MHz Oscillator Efficiency '1
%
(VCE = 28 Vdc, IC = 40 mAdc) - 38 -
111 Pulse Test: Pulse Width S300 ps, Duty Cycle S2.0%.
2-72
2N708 (SILICON)
2N708 NPN silicon annular transistor for high-speed switch-
JAN, JTX AVAI LABLE ing applications.
if) "MAXIMUM RATINGS
~ Rating
Collector-Emitter Voltage
Symbol
VCEO
Value
15
Unit
Vdc
l\ Collector-Base Voltage
Emitter-Base Voltage
Total Device Dissipation @ T A - 25 u C
Vce
VEB
PD
40
5.0
360
Vdc
Vdc
mW
Derate above 2SoC 2.0 mW/oC
CASE 22 Total Device Dissipation @ T C - 2SoC PD 1.2 Watts
(TO-IS) TC = 100°C 680 mW
Derate above 2SoC 6.9 mW/oC
Collector Derate above 1000 C 6.9 mW/oC
connected to case Operating and Storage Junction Temperature Range TJ, T stg -65 to +200 °c
ON CHARACTERISTICS
• DC Current Gain hFE -
(IC = 0.5 mAde, VCE = 1. 0 Vde) 15 - -
(IC = 10 mAde, VCE = 1. 0 Vde) (Note 1) 30 - 120
(IC = 10 mAde, VCE = 1. 0 Vde, T A = -55"C) (Note 1) 15 - -
'Colleetor-Emitter Saturation Voltage Vde
VCE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) - 0.2 0.4
(IC = 7.0 mAde, IB = 0.7 mAde, T A = -55"C to +125"C) - - 0.4
DYNAMIC CHARACTERISTICS
ttCurrent-Gain-Bandwidth Product fT MHz
(IC = 10 mAde, VCE = 10 Vdc, f = 100 MHz) 300 450 -
Output Capacitance Cob pF
(VCB = 10 Vdc, IE = 0, 100 kHz ~ f ~ 1. 0 MHz) - 3.0 6.0
• Storage Time t ns
s
(IC = IBI = IB2 = 10 mAde) - 15 25
2-73
2N711 I A, B(GERMANIUM)
MAXIMUM RATINGS
2-74
2N711 ,A,B (continued)
Figure 2:
{ 2N711A
2N711B
-
-
-- 110
100
2N711 - 90 ISO
2-75
2N711,A,B (continued)
SWITCHING CIRCUITS
FIGURE 1 FIGURE 2
-3.5Ydc
_,,,.
~
r:k"ACKMD
'UuUIN. INPUT
o
+1.25V
ax-"KT1IOII~"1
OREQUIVALEIft'
ov-=J- -F-
_SAyU ••
RISUID fALL TIME < I nl
::S::~~~'UIYALElU
I-""
i 0.2
Ht~ ~
It.-
~
IClt:=- i-"'I""
I""'"
--
!:
_~ +85"C
<Ii 2.0 !150~---r--~-~~+_--_;
I"" _S +25°C
~ ~-
!i!
;:::
1.0
~100~----+-~~+-----;-~--~
,
Co)
~ 0.8 io""'"
~ t;
~ 0.6 , ~
.:
V
i
- fII' ./ 50~--~--~---+_~~-;
0.4
~ ... "'" ,,/
,,~ ~SSOC
O~ ____~__~~__~~__~
0.2
o 5 10 15
O. 1
, ~" Icll., •CIRCUIT CURRENT RATIO
2-76
2N 718
(SILICON)
2N1420
2N1420 2N71S
TO-5 TO-IS
2-77
2N 718, 2N 1420 (continued)
2-78
2N718A(SILICON)
2N718AJAN, JTX AVAI LABLE
2N956
2N1613
2N1613 JAN AVAILABLE
CASE 22 CASE 31
(TO-IS) (TO-S)
2N718A 2N1613
2N956 2N1711
Collector connected to case
MAXIMUM RATINGS
2N718A 2N1613
Rating Symbol 2N956 2N1711 Unit
Collector-Emitter Voltage VCER 50 Vdc
2-79
2N718A, 2N956, 2N1613, 2N1711 (continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCER Vde
(IC " 100 mAde, pulsed; RBE ~ 10 ohms) 50 - -
C olleetor- Base Breakdown Voltage BVCBO Vde
(IC " 100 /lAde, IE" 0) 75 - -
Emitter-Base Breakdown Voltage BV EBO Vde
(IE" 100 /lAde, IC " 0) 7.0 - -
Collector Cutoff Current iJ,Ade
ICBO
(V CB " 60 Vde, IE" 0) - 0.001 0.01
(V CB " 60 Vde, IE "0, T A " 1500C) - - 10
ON CHARACTERISTICS
DC Current Gain hFE -
(IC " 0.01 mAde, VCE " 10 Vde) 2N956, 2N1711 20 - -
(IC " 0.1 mAde, VCE " 10 Vde) 2N718A, 2N1613 20 - -
2N956, 2Nl711 35 - -
(IC " 10 mAde, VCE " 10 Vde) 2N718A, 2N1613 35 - -
2N956, 2N1711 75 - -
(IC " 10 mAde, VCE " 10 Vde, T A " -55'C) 2N718A, 2N1613 20 - -
2N956, 2N1711 35 - -
(IC " 150 mAde, VCE " 10 Vde)* 2N71SA, 2N1613 40 - 120
2N956, 2N1711 100 - 300
(IC " 500 mAdc, VCE " 10 Vde)* 2N71SA, 2N1613 20 - -
2N956, 2N1711 40 - -
Collector-Emitter Saiuration Voltage' (11 VCE(sat) Vde
(IC " 150 mAde, IB" 15 mAde) - 0.24 1.5
SMAll-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC "50 mAde, VCE " 10 Vde, f" 20 MHz) 2N71SA, 2N1613 60
70
300 -
2N956, 2N1711 300
Output Capacitance Cob pF
(VCB " 10 Vde, IE" 0, f" 100 kHz) - 4.0 25
Input Capacitance C ib pF
(V BE "0.5 Vde. IC "0, f " 100 kHz) - 20 SO
Noise Figure NF dB
(IC " 300 iJ,Ade, VCE " 10 Vde. f" 1.0 kHz) 2N718A. 2N1613 - - 12
2N956, 2N1711 - - 8.0
(I) Pulse Test: Pulse Width ~ 300 iJS, Duty Cycle ~ 2.0%.
2-80
2N720A (SILICON)
CASE 22
(TO·18)
Collector connected to case
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal ReSistance, Junction to Case °JC 97 °C/W
2-81
2N720A (continued)
ON CHARACTERISTICS
DC Current Gain hFE
.
(IC = O. I mAde, VCE = 10 Vde) 20 -
(IC = 10 mAde, V CE = 10 Vdc)* 35 -
(IC = 10 mAdc, VCE = 10 Vdc, T A = _55°C) 20 -
(IC = 150 mAdc, V CE = 10 Vdc)* 40 120
SMALL·SIGNAL CHARACTERISTICS
Current~Gairi-Bandwidth Product IT MHz
(IC = 50 mAdc, V CE = 10 Vde, I = 20 MHz) 50 -
Output Capacitance Cob pF
(VCB = 10 Vde, IE = 0, 1= 100 kHz) - 15
Input Capacitance C 1b pF
(V BE = 0.5 Vde, IC = 0, I = 100 kHz) - 85
(11 Pulse Test: Pulse Width ~ 300 JlS, Duty Cycle ~ 2.0%.
2-82
2N 121 (SILICON)
CASE 22
(TO.18)
Collector connected to case
MAXIMUM RAilNGS
2-83
2N721 (continued)
ON CHARACTERISTICS
DC Current GaIn. hFE •
(IC = 150 mAde, VCE = 10 Vde) 20 45 -
(IC = 5. 0 mAde, ,VCE = 10 Vde) 15 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 150 mAde, Ia = 15 mAde) - 1.5
PNPSILICON
SWITCHING
TRANSISTORS
J
CASE 22
PNP SILICON ANNULAR TRANSISTORS (TO-IS)
2N722
MAXIMUM RATINGS
11 :,[0 hr
0.195 01.
om
~
W11
0.210
O.016 DIA nn
--t.500
MIN
0.019 U u-1.
0.100
BAS(
- -
L..JfU'-"'-COLLECTOR
2-85
2N722, 2N1132, 2N1132A, 2N2303(continued)
--
(IC .. 100 mAde; IB " 0) 2N722, 2N1l32, 2N2303 3~
2N1l32A 40
Collector-Emitter B1'eakdown Voltage (11 BVCER Vde
(IC .. 100 mAde, RBE S 10 Ohms) 50 -
Collector-Base Breakdo\Vn Voltage BVCBO Vde
(XC" 100 ItAd~, IE .. 0) 2N722, 2N1l32, 2N230S 50 -
2N1l32A 60 -
Emitter-Base Breakdown Voltage BV EBO Vde
(IE " 100 It~e, IC .. 0) 2N722, 2NU32, 2N2303 5.0 -
(IE .. 1. 0 mAde, Ic " 0) 2N1132A 5.0 -
Collector Cutoff Current I CBO ItAdc
(VCB " 30 Vde, IE" 0) 2N722, 2NU32, 2N2303 · 1.0
(V CB ,,30 Vde, IE" 0, T A" lS0·C) 2N722, 2NU32, 2N2303 - 100
(VCB .. 50 Vde, IE .. 0) 2N1l32A
· 0.5
(V CB .. 50 VdC, IE" 0, T A" 150·C) 2N1l32A - 50
ON CHARACTERISTICS
J)C Current GaIn
(IC .. 5.0 mAde, V CE .. 10 Vde) 2N722, 2N1l32, 2N1l32A
hFE
25 -- -
2N2303 75
(Ic " 160 mAde, VCE .. 10 Vde) 2N722 , 2N1132, 2N1l32A 30 90
2N2S0S 75 200
Collector-Emitter Saturatioll Voltage Vde
(IC .. 150 mAde, IB .. 15 mAde)
VCE(sat)
- 1.5
SMALL·SIGNAL CHARACTERISTICS
Current-GaIn-Bandwidth Product MHz
(IC .. 50 mAde, VCE .. 10 Vde, f .. 20 MHZ)
fT
60 .
Output CapaCitance pF
COb
(V CD " 10 Vde, IE "0, f .. 100 kIU) 2N722, 2N1l32, 2N2303 - 45
(VCD = 10 Vdc, ~ .. 0, r .. 1.0 MHz) 2N1132A - 30
Input Capacitance C ib pF
(V BE .. O. 5 Vile, IC .. 0, f .. 100 kHz) - 80
(11 Pul" Test: Pulee Width '" 300 its, Duty Cycle ~ 2.0%.
2--:86
2N726 (SILICON)
2N727
PNPSILICON
PNP SILICON ANNULAR TRANSISTORS AMPLIFIER
TRANSISTORS
!
• Low Output Capacitance -
Cob = 5.0 pI' (Max) @ VCB = 5.0 Vdc
·MAXIMUM RATINGS
Rating Symbol Valua Unit
Coliector·Emitter Voltage VCEO 20 Vde
Coliector·Sase Voltage VCS 25 Vde
I t:mitter·Sase Voltage VES !l.U Vde
Collector CUrrent Continuous Ie 50 mAde
Total Device Dissipation@TA = 25u C Po 300 mW
Derate above 25°C 2.0 mW/oe
Total Device Dissipation@Te=250C Po 1.0 Watt
Derate !!bove 25°C 6.67 mW/oC
Operating and Storage Junction TJ.Tstg -65 to +200 °e
Temperature Range
2-87
2N726, 2N727 (continued)
2-88
2N731 (SILICON)
MAXIMUM RATINGS
ON CHARACTERISTICS
DC Current Gain t1I hFE -
(IC =150 mAde, VCE =10 Vdc) 40 120
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 50 mAde, VCE =10 Vde, f =20 MHz) 25 -
Output Capacitance Cob pF
(V CB =10 Vdc, ~ =0, f =1. 0 MHz) - 35
2-89
2N735 (SILICON)
2N736
2N739
2N740
CASE 22
(TO·18)
Collector connected to case
MAXIMUM RATINGS
2N735 2N73g
Rating Symbol 2N736 2N740 Unit
Collector-E':mitter Voltage V CEO 60 80 Vdc
2-90
2N735, 2N736, 2N739, 2N740 (Continued)
ON CHARACTERISTICS
DC Cur rent Gain hFE -
(IC = 5.0 mAde, VCE = 5.0 Vde) 2N735, 2N739 30 100
2N736, 2N740 60 200
Collector-Emitter Saturation Voltage Vde
VCE(sat)
(IC = 10 mAde, IB = 2.0 mAde) - 1.0
SMALL·SIGNAL CHARACTERISTICS
OUtput Capacitance Cob pF
(VCB = 5.0 Vde, IE = 0, f = 1.0 MHz) - 10
(I) Pulse Test: Pulse Width ~ 300 ~s, Duty Cycle ~ 2.0%.
2-91
2N7 41, A (GERMANIUM)
CASE 22
(TO-IS)
MAXIMUM RATINGS
POWER OUTPUT versus FREQUENCY, POWER GAIN AND COMMON EMITTER CURRENT GAIN
CLASS C AMPLIFIER versus FREQUENCY
500 28
II,
LIMITED DUTY CYCLE
II
400
300
---- - -- . .
NOTE: DC power input
is 800 to 1000 Milliwatts
~
24
20 "'I"" ~OWER
~
AIN
I
~ 16
,
,, ~ 1 ~
200 - HIGH ReliABILITY MAX z .12 Vel = -6Vde
i'-..\
;j
8.0
I, - 5 mAde ~
100
! '\:
~ 4.0
o
10 20 30 40 50 60 80 100 200 300 o
I~
I Z.o 4.0 6.0 10 20 40 60 100 200 400 1000
FREQUENCY (MH'i
FREQUENCY ( MH'i
2-92
2N741,A (continued)
ELECTRICAL CHARACTER ISTICS (TA = 250 C unless otherwise noted)
Characteristic
ON CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO Vdc
~ = 100 "Adc, IE =0) 2N741 15 - -
2N741A 20 - -
Emitter-Base Breakdown Voltage BVEBO Vde
OE =100 ,.Adc, IC =0) 1.0 - -
Collector Cutoff Current ICES "Ade
(VCE = 15 Vdc, VBE = 0) 2N741 - - 100
(VCE =20 Vde, VBE = 0) 2N741A - - 100
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IE =5 mAde, VCB = 6 Vde, f = 100 MHz) 2N741
2N741A
-
300
360
360 --
Output Capacitance Cob pF
(VCB =6 Vde, IE = 0, f = 100 kHz) - 6.0 10
Collector Capacitance Ce pF
(VCB =6 Vde, IE = 0, f =100 kHz) - 3.0 -
Small-Signal Current Gain hfe -
(IC = 5 mAde, VCE =6 Vdc, f = 1 kHz) 20 - -
Output Admittance hob "mhos
(IE =5 mAde, VCB " 6 Vdc, f =1 kHz) - 45 -
Input Impedance hib Ohms
(IE =5 mAde, VCB =6 Vde, f =1 kHz) - 8.0 15
2-93
2N743 (SILICON)
CASE 22
(TO-IS)
Collector connected to case
MAXIMUM RATINGS
Rating Symbol Value Unit
.:i-
10 V
ONi
VI
91
TURN-OFF: so
~
-q ~
0.1
tL F
RS
TO SCOPE
tr~1.0ns O. 1 ~F SOO
0.1
TO SCOPE
~F t r '1.0ns
Z. = 50
Vin=-10~
tr ~ 1. 0 ns In
~ 1.0~: rs
500
Duty Cycle. 2.0% 6
tr
Pulse Width :;:: 300 ns IIV
Duty Cycle <t" 2. 0%
IRcurr CONDrrlONS
(VOLTS)
t to!! (OHMS)
on
Condition VI I VSIl V2 J VSS VCC RI R2 R3 R4 RS
1 IS I -3.0 . -151 +12 3.0 3.3 k SO 220 -
2 20 -4. S ·20 +15.3* 6.0 330 56 - 1.0k
• VSS is pulsed for 1. 5 s at less than 10% Duty Cycle to maintain T C < 30· C.
2-94
2N743 (continued)
ON CHARACTERISTICS
DC Current Gain hFE
(IC = 1. 0 mAde, VCE = O. 25 Vde) 10 -
(IC = 10 mAde, VCE = 0.35 Vdc) 20 60
(IC = 10 mAde, VCE = 0.35 Vde, T A = _55' C) 10 -
(IC = 100 mAde, VCE = 1. 0 Vde) 10 -
Collector-Emitter Saturation Voltage Vde
VCE(Sat)
(IC = 10 mAde, Is =1..0 mAde, TA =170' C) - 0.35
(IC =100 mAde, Is =10 mAde, T A = 170·C) - 1.0
(Ic = 10 mAde, IS = 1. 0 mAde, T A = _55' C) - 1.1
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product iT MHz
(IC = 10 mAde, VCE =10 Vde, f = 100 MHz) 282 -
Output Capacitance Cob pF
(V CS = 5.0 Vde, IE = 0, f = 1.0 MHz) - 5.0
Storage Time ts ns
(Ic " 10 mAde, IBI "IS2 = 10 mAde, VCC = 10 Vde,
Figure 2) - 14
2-95
2N744 (SILICON)
MAXIMUM RATINGS
Rating Symbol Value Unit
"Refers to the 'voltage at which the'magnitude of hFE a:pproaches one when the
emitter-base diode is open-circuited.
400 10 Vde
(Adjust for R3
IC = 10 mAde) (HFR)
IC = +10 mAde
IBI = +10 mAde
IB2= _to mAde
2N744 (continued)
~l ~1
CONDITION IC VCC Rl = R2 R3 R4 R5 VBB VIN VBB VIN
rnA VBJ<lgffl Vdc Q Q Q Q V V V V
2N753 (SILICON)
CASE 22
(TO.18)
MAXIMUM RATINGS
Ie. = -IOmAdc
I" = -l.3ri\Adc
Vee'" -3V I .. '" -3.lmAdc
GtNERAtOR t .., '" 50!l
INPUT PULSE t, ::: I, "" 1 ns
215 !l
INPUT PULSE WIMH '" 100 ns swITCH IN. TIME TEST CIRCUIT
(50% OUTY CYCLE) SCOPE
1.2K!l Z,N"'" 1 Mego
e lN ~ 20·p:r
t, "" 1 ns
2-98
2N827 (continued)
2-99
2N828 (GERMANIUM)
MAXIMUM RATINGS
+,m '--1----r-
~5.4V
INTERNAL RESISTANCE
2000 UK
NOTE,
1•• ==_lmA
I., == +0.25mA
_3Ydc (APPROX)
(ADJUST FOR Ie == _IOmA)
I" == -IOmA
USE TEKTRON IX TYPE R PLUG·IN
:F--
PULSE VOLTS 9800 2011
INTERNAL RESISTANCE
500 3500 -IOVdc (APPROX)
NOTE, (ADJUST FOR Ie :::: 10mA)
I... == _0.10mA
-4.4Y 1..,= +IOmA
INPUT WAVEFORM Ie :::: -IOmA
2-100
2N828 (continued)
Sill
HFR
INPUT WAVEFORM
_3.0Vdc
OBSERVE
+1.05V
rTrt!
SCOPE TRIGGER INPUT HERE O.Ql)lF
O~
125rJ
,..m..."". T ~ 1: :
,j.
3K
HFR O.OOI"F
HFR
-7.5Vdc -3.0Vdc
Cha racteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Volt~ BVCEO Vde
(Ie = 1 mAde, = 0) Ia - 10 -
Collector-Emitter Breakdown Voltage BVCES Vde
(IC = 100 /LAde, VBE = 0) 15 25 -
Collector-Base Breakdown Voltage BV CBO Vde
(IC = 100/LAde, IE = 0) 15 25 -
Emitter-Base Breakdown Voltage BV EBO Vde
(~ = 100 /LAde, IC = 0) 2.5 - -
Collector Cutoff Current /LAde
leBO
(V CB = 6 Vde, ~ = 0) - 0.4 3.0
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAde, VCE = 0.3 Vde)
hFE
25 40 -
-
Colleetor- Emitter Saturation Voltage (VCE(sat) Vde
(IC = 10 mAde, IB = 1 mAde) - 0.12 0.2
(IC = 50 mAde, Ia = 5 mAde) - 0.18 0.25
2-101
2N828 (continued)
ELECTRICAL CHARACTERISTICS (continued)
2N828A (GERMANIUM)
2N829
C~l~\
Collector connected to case
PNP germanium epitaxial mesa transistors for high-
speed switching applications
MAXIMUM RATINGS
2-102
2N 8 28A, 2N 8 29 (continued)
2-103
2N828A, 2N829(continued)
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol Min Typ Max Unit
Input Capacitance Cib
-- 2.2 3. 5 pF
IC = 10mAdc
-5.4 VDC
200 4. SK Ie = -10mAdc
IB1 = -lmAdc
IB2 • +0. 25mAdc
0- u-
+1. 9 Vde
-S.2 Vde
100 900
C>-'V\I\,.-JVIII...-{
Ie = -l50mAde
IB1 = -7. 5mAde
IB2 = +1. 9mAdc
VBE(O) = +1. 9Vdc
VBE (0) = +1. 25Vdc
SCOPE INPUT IMPEDANCE. 1Megohm SCOPE INPUT IMPEDANCE = 1Megohm
SCOPE INPUT CAPACITANCE = 20'pF SCOPE INPUT CAPACITANCE = 20 pF
GENERATOR OUTPUT IMPEDANCE = 50 ohms GENERATOR OUTPUT IMPEDANCE = 50 ohms
INPUT PULSE tr • t f = 2ns INPUT PULSE tr = t f = 2ns
VBB' Ie = -150mAde
100 A IC' -10mAdc VBB' 100 A IS = -7.5mAde
U IB = -lmAdc
u
-5.4 Vdc
AT POINT A 100
j
-
-
HgRELAY
~
10%- __
r I
~
-90%
20mV
MAX
-S Vdc
AT POINT A 100
f~ '=
HgRELAY
10%--
~
-90%
r
_L
20mV
MAX
2N835
NPN silicon epitaxial transistors for high- speed
switching applications.
CASE 22 \
(TO·18)
Collector connected to case
MAXIMUM RATINGS
+10Vde
'50
'Oo . ...
'_.
50 ...
·+l1Y
t. n ,Y.. =+18Vdc V,.=-19Vdr:
.'---r=:t
NOTE. ALL SWlreHINa TIMES MWUR£l) WITH LI/IIATfION MOOU 420 SWlreHINC TIME TEST SET OR EQUIVALENT.
2N834, 2N835 (continued)
ON CHARACTERISTICS
DC Current Gain 111 hFE -
(Ie = 10 mAdc, VCE = 1 Vdc) 2N834
2N835
25
20.
--
Collector-Emitter Saturation Voltage (V CE(sat) Vdc
(IC = 10 mAdc, IB = 1 mAdc) 2N834 - 0.25
111
2N835 - 0.30
(IC = 50 mAdc, IB = 5 mAdc) 2N834 - 0.4
III
2N835 - -
Base-Emitter Saturation Voltage VBE(sat) Vdc
(IC = 10 mAdc, IB = 1 mAdc) - 0.9
DYNAMIC CHARACTERISTICS
Current~Gain - Bandwidth Product fT' MHz
(IC = 10 mAde,VCE = 20 Vde, f = 100 MHz) 2N834 350 -
(IC = 10 mAde, VCE = 15 Vde, f = 100 MHz) 2N835 300 -
High-Frequency Current Gain
Ihfel -
(IC = 10 mAde, VCE = 20 Vde, f = 100 MHz) 2N834 3.5
111
Pulse Test: Pulse Width S 12 ms, Duty Cycle S 2%
2.-106
2N838 (GERMANIUM)
"
CASE 22
(TO·18)
MAXIMUM RATINGS
FIGURE 1 - SWITCHING TIME TEST CIRCUIT FIGURE 2 - AREA OF PERMISSIBLE LOAD LOCI
Ie. = -IDmAdc
= -3V
1'1 = -3.3mAdc
=
GENERATOR Z... 50!! Vee
I" = +3.3mAdc
-=
INPUT PULSE t, = t. 1 ns 80
INPUT PULSE WIDTH = 100 ns 275 !! ~
(5q% DUTY CYCLE) .s
~
SCOPE
liN:=:: 1 Megn ~
'"
~
'-'
CIN :::;; 20 pF
'"
~
t.::::: 1 ns
is
'-'
VlEI01 = +4Vdc ~
2-107
2N838 (continued)
2-108
2N840 (SILICON)
2N841
CASE 22
(TO·18)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
2-109
2N840, 2N841 (Continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(Ie = 10 mAdc, VeE = 5.0 Vdc) 2N840 30 100
2N841 60 400
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(IC" 10 mAdc, IB = 2.2 mAdc) - 2.0
SMALL·SIGNALCHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 20 MHz) 2N840 1.5 -
2N841 2.0 -
Output Capacitance Cob pF
(VCB = 5.0 Vdc, IE = 0, f = 1. 0 MHz) - 15
2-110
2N869 (SILICON)
2N995
CASE 22
(TO· IS)
MAXIMUM RATINGS
2-111
2N869, 2N995 (continued)
2N869
hFE
20 --- 120
---
(IC = 1.0 mAdc, VCE = 1.0 Vdc) 2N995 25 --- ---
(Ie = 20 mAdc, VCE = 1.0 Vdc)
(Ic = 50 mAdc, VCE = 1.0 Vdc)
2N995
2N995
35
25
--- 140
--- ---
Open-Circuit Output Capacitance Cob pF
(VCB = 10 V, IE = 0) 2N869 --- 3.0 9
2N995 -. - 3.0 10
Small-Signal Forward-Current
Transfer Ratio bee ---
( IC = 10 mA, VCE = 15 V, f = 100 MHz) 2N869
(Ic = 10 mA, VCE = 10 V, f = 100 MHz) 2N995
1.0
l.0
3.0
3.0
---
---
(1) Pulse Note: Pulse Width = 300 II s, Duty Cycle = 1%
2-112
2N869A(SILICON)
2N869A JAN/JANTX Available
MM869B
PNP SILICON
PNP SILICON ANNULAR TRANSISTORS SWITCHING
TRANSISTORS
*MAXIMUM RATINGS
Rating Symbol 2N869A MM869B Unit
Collector-Emitter Voltage VCEO 18 30 Vde
Collector-Base Voltage VCB 25 30 Vde
Emitter-Base Voltage VEB 5.0 Vde
Collector Current IC 200 mAde
Total Device Dissipation @ T A = 25°C Po 360 mW
Derate above 25°C 2.1 mW/oC
Total Device Dissipation @ T C = 25°C Po 1.2 Watt.
0.Z09
Derate above 25°C 6.86 mW/oC
1 1f.iliir
L
OIA
&m OlAl
Operating and Storage Junction TJ, Tstg -65 to +200 °c
Temperature Range
l 1$°
ij
·2N869A JEOEC Registered Data.
-2.0 V ~OIA
Pulse Source
Ir< 1.0ns 100
f'W > 200 ns Pin 1. Emitter
Zin = 50 n. t----oVOUI
2. Base 0.100
3.Coilector
0.1 "F
TO SAMPLING SCOPE
Zin'" 100 kn.
VinT 2.0 k tr< 1.0ns 0.028
II:ImI
100
CASE 22 (11
(TO·1SI
2-113
2N~69A,MM869B (continued)
rOFF::'':: :':
CtiARACTERISTICS
Symbol Min Typ Max Unit
--
(Ie ~10 "Ade. Ie .. 01 2N869A 25 -
MMB69B 30
, Smitt~r-Il_ Brea~down Voltage BVEBO 5.0 - - Vde
II"" 10uAdQ.IC" Q)
q\lll~~tor Cutoff Current ICES - .010 "Adc
IVCE" 1p Vd., VBe .. 0)
CQlle~tor Clltott Cu rrent ICBO 25 "Ad.
(Vea "1~ Vde. IE .. D. TA" 150( 0)
lIall!l Cutr,"! IB .010 "Ad.
(Vee" 1Ii Vd., VBE "01
ON CHARACTIlRISTICS
PC'Ollrrim! Gain(11 hFE 111 -
(Ie" 10 mAd~. VeE" 0.3 Vdcl
(10" 10 mAde, VOE .. 5.0 Vdel
30
40 -
- -
120
(I C = 30 mAde. V Cf;: .. 0.5 Vdcl 40 - 120
110" 30 mAde. VOE .. 0,5 We, TA "-550 CI 17 - -
IIc = 100 mAde, VCE " 1.0 Vdel 25 - -
. Colleclor-em ~er Saturation VOltage VeE (sat! Vdc
(10" 10 mAde, 16 .. 1.0 mAde) - - 0.15
(I C .. 30 rnAdQ, I B .. 3,e;! mAde) - - 0.2
(Ie" 100 mAde, 18" lQ mAde) - - 0.5
, Sase·Emi!t,. Saturation Voltage VBE(satl Vde
(lc" 10 mAde, Ie" 1.0 mAde) 0.78 - 0.98
(lc" 30 mAde, la" 3.0 mAdel 0.85 - 1.2
(lc .. 100 mAd~, IS .. 10 mAdc) - - 1.7
IlMALL,sIGNAL CHARACTIlRISTICS
Current.Galn-eandwldth Proquei(21 fy 400 - - MH~
lie ~ 10 mAde. VCE ~ 15 Vde, t ~ 100 MHz)
output C;IIP,clte"ee Cob - 6.0 pF
(Vca .. 5.0 VdG. IE ~ 0, f ~ 140 kHz)
InpL!t"CapliCitance Gib - - 6.0 pF
(Vefi ~ 0.5 Vd~, Ie ~ o. f .. 140 kH~1
"WmlI-lING CHARACTERISTICS
Turn;OnTlme ns
He ~ 30 mAde; IBl .. 1.5 mAde) Both Type. ton - - 50
IIC" 30 mAdc, le1 .. 3.0 mAde) MM829B - 10 - ns
Turn-Off Time ns
(lC" 30 mAde,lBl "le2" 1.5 mAde) Both Types toff - - 80
lie::" 31/ mAde.IB1" IB;I"3.0 mAde) MM829B - 60 - ns
2-114
2N910 (SILICON)
2N911
CASE 22
(TO-18)
Collector connected to cIse
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
2-115
2N910, 2N911 (Continued)
ELECTRICAL CHARACTERISTICS (T. =2S'C unless otherwise noted)
Characteristic Symbol Min Max Uriit ~j
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage' , Vde
BVCEO(sus)
(IC = 30 mAde, IB = 0) 60 -
Collector-Emitter Sustaining Voltage'
, Vde
BVCER(sus)
(IC = 100 mAde, RBE ~ 10 ohms) 80 -
Collector-Base Breakdown Voltage BVCBO Vde
(IC = 100 pAde, ~ = 0) 100 -
Emitter-Base Breakdown Voltage BV EBO , Vde
(~ = 100 pAde, IC = 0), 7.0 -
Collector Cutoff Current ICBO
(VCB = 75 Vde, IE = 0) - 25 nAde
(VCB = 75 Vde, IE = 0, ,T A = 150"C) - 15 pAde
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = O. I mAde, VCE = 10 Vde) 2N9IO 35 -
2N911 20 -
(IC = 10 mAde, VCE = 10 Vde) 2N910* 75 -
2N9U* 35 -
(IC = 10 mAde, VCE = 10 Vde, TA = -55"C) 2N910* 30 -
2N911* 15 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 10 mAde, IB = 1. 0 mAde) - 0.4
(IC = 50 mAde, IB = 5.0 mAde) - 1.2
SMALL·SIGNAL CHARACTERISTICS
Current-Gain-Bandwldth Product fT MHz
(IC = 50 mAde, VCE = 10 Vde, f = 20 MHz) 2N910 60 -
2N911 50 -
Output Capacitance Cob pF
(VCB = 10 Vde, IE = 0, f = 100 kHz) - 15
Input Capacitance C ib pF
(V BE = 0.5 Vde, IC = 0, f = 100 kHz) - 85
Noise Figure NF dB
(IC = O. 3 mAde, VCB = 10 Vde, RG = 510 ohms, 2N9IO - 12
f = 1. 0 kHz, B. W. = 200 Hz)
2N911 - 15
2-116
2N914 (SILICON)
2N914 JAN. JTX Available
CASE 22
(TO·1S)
Collector connected
to case
NPN silicon annular transistor for high-speed switch-
ing applications.
MAXIMUM RATINGS
CHARGE STORAGE TIME CONSTANT TEST CIRCUIT t... and loft TEST CIRCUIT
+5V
OV - , r +5V
-9V U
INPUT PULSE 240 INPUT PULSE 23
Rise Time:=::: 1 ns Rise Time :-:::: 1 ns
500 Source Impedance 500 Source Impedance
O.l/Lr 215 O.ll'f 200
T- T
OUTPUTTO OUTPUT TO
SAMPLING OSCILLOSCOPE SAMPLING OSCILLOSCOPE
Rise Time ~ 1 ns Rise Time ~ 1 ns
100 500 Input Impedance 200 50n ,Input Impedance
PW ~200ns p W ~ 200 ns
=
+7V -4V
2-117
2N914 (continued)
OFF CHARACTERISTICS
*Collector-Emitter Sustaining Voltage (Note 1) BVCEO(sus) Vdc
(IC = 30 mAdc, IB = 0) 15 -
*Collector-Emitter Sustaining Voltage (Note 1) BVCER(sus) Vdc
(IC = 30 mAdc, RBE $ 10 ohms) 20 -
*Collector-Base Breakdown Voltage BV CBO Vdc
(Ic;: 1. 0 /lAdc, IE '" 0) 40 -
*Emitter-Base Breakdown Voltage BV EBO Vdc
(IE;: lO/lAde, IC = 0) 5.0 -
*Collector Cutoff Current I CEX /lAde
(V CE = 20 Vdc, VEB(off) '" 0.25 Vde, l'A ;: 125°C) - 10
"Collector Cutoff Current I CBO /lAde
(V CB = 20 Vde, IE = 0) - 0.025
(V CB = 20 Vde, IE '" 0, T A = 150°C) - 15
ON CHARACTERISTICS
DC current Gain (Note 1)
hFE -
*(IC = 10 mAde, VCE = 1. 0 Vde) 30 120
(IC = 10 mAde, VCE = 1. 0 Vde, T A = -55°C) 12 -
*(I c = 500 mAde, VCE = 5.0 Vde) 10 -
Collector-Emitter Saturation Voltage (Note 1) Vde
VCE(sat)
*(I c '" 200 mAde, IB = 20 mAde) - 0.70
(IC '" 10mAdc,IB = 1. 0 thru 20 mAde, T A = -55 to +125 0 C) - 0.25
"'Base-Emitter Saturation Voltage Vde
(I C ;: 10 mAde, IB = 1. 0 mAde) VBE(sat)
0.70 0.80
DYNAMIC CHARACTERISTICS
2-118
2N915 (SILICON)
MAXIMUM RATINGS
2-119
2N915 (continued)
2-120
2N916 (SILICON)
2N916 JAN Available
CASE22
(TO·1S) ~
Collector NPN silicon annular transistor for high-frequency
connected to case amplifier, oscillator and switching applications.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Base Voltage VCB 45 Vdc
Collector-Emitter Voltage VCEO 25 Vdc
Emitter-Base Voltage VEB 5 Vdc
Total Device Dissipation PD
@ 25"C Case Temperature 1.2 W
Derating Factor Above 25·C 6.9 mW/"C
Total Device Dissipation PD
@ 25"C Ambient Temperature . 36 W
Derating Factor Above 25·C 2.06 mW/"C
Junction Temperature, Operating TJ +200 ·C
2-121
2N918 (SILICON)
2N918JAN,JTXAVAILABLE
NPN SILICON
NPN SILICON ANNULAR TRANSISTORS AMPLIFIER
TRANSISTORS
· .. designed for lise in VHF and UHF amplifier, mixer and o:;cillator
applications.
•
Low Output Capacitance -
Cob = 1.7 pF (Max) @ VCB = 10 Vdc
0.1
!'Wo
*MAXIMUM RATINGS
Rating Svmbol Value Unit 0.016 D1A
1.'N 0.500
~
Collector-Emitter Voltage VCEO 15 Vdo o:m
Colleetor-Sase Voltage VCB 30 Vde
Emitter·Base Voltage VES 3.0 Vde
CQllector Current - Continuous IC 50 mAde 0.100
FIGURE 1 - NEUTRALIZED 200 MHz POWER AMPLIFIER GAIN FIGUR E 2 - 500 MHz OSCILLATOR TEST CIRCUIT
TEST CIRCUIT
FROM SOil
'f.( LI 'CI
L2'/
.L
']:J "
\I
'[1: ¥8i
:1~
1000.F
~ 1
0,01 ,.F
TO SOn
0.01 "F3DETECTOR -
I L2
LEAO 41C
FLOATING
500 MHz
RFC
1000
, j
2-122
2N918 (continued)
ON CHARACTERISTICS
DC Current Gain hFE 20 - -
(lC ~ 3.0 mAde, VCE ~ 1.0 Vde)
COllector-Emitter Saturation Voltage VCE(sat) - 0.4 Vde
(lC~ 10 mAde, IB~ 1.0 mAde)
Bas~Emitter Saturation Voltage VBElsat) - 1.0 Vde
(lC ~ 10 mAde, IB ~ 1.0 mAde)
DYNAMIC CHARACTERISTICS
Current·Gain - Bandwidth Product I I)
(lC ~ 4.0 mAde, VCE ~ 10 Vde, f ~ 100 MHz)
. for 600 - MHz
FUNCTIONAL TEST
Amplifier Power Gain (Figure I) G pe 15 - dB
(VCB ~ 12 Vde, IC ~ 6.0 mAde, f ~ 200 MHz)
Power Output (F igure 2) Pout 30 - mW
(VCB ~ 15 Vde, Ie ~ 8.0 mAde, f ~ 500 MHz)
Collector Efficienev (Figure 2) ~ 25 - %
(VeB ~ 15 Vde, Ie ~ 8.0 mAde, f ~ 500 MHz)
2-123
2N929, A (SILICON)
2N930, A
2N929JAN AVAILABLE
2N930JAN AVAILABLE
CASE 22
(TO·18)
Collector connected to C8se
MAXIMUM RATINGS
2N929 2N929A
Rating Symbol 2N930 2N930A Unit
Collector-Emitter Voltage VCEO 45 60 Vdc
2-124
2N929, A, 2N930, A (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 1. 0 pAde, VCE = 5.0 Vdc) 2N929A 25 -
2N930A 60 -
(IC = 10 pAde, VCE = 5.0 Vde) 2N929, 2N929A 40 120
2N930, 2N930A 100 300
(IC = 10 pAde, VCE = 5.0 Vde, T A = -55'C) 2N929 10 -
2N929A 15 -
2N930 20 -
2N930A 30 -
(IC = 500 pAdc, VCE = 5.0 Vde) 2N929, 2N929A
2N930, 2N930A
60
150
--
(IC = 10 mAde, VCE = 5.0 Vde) 111 2N929, 2N929A - 350
2N930, 2N930A - 600
Collector-Emitter Saturation Voltage Ill· Vdc
VCE(sat)
(IC = 10 mAde, IB = 0.5 mAde) 2N929, '2N930 - 1.0
2N929A, 2N930A - 0.5
Base-Emitter Saturation Voltage (11 Vdc
VBE(sat)
(IC = 10 mAde, IB = 0.5 mAde) 2N929, 2N930 0.6 1.0
2N929A, 2N930A
SMAll·SIGNAl CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 500 pAdc, VCE = 5.0 Vde, f = 30 MHz)
2N929, 2N930 30 -
2N929A, 2N930A 45 -
Output Capacitance Cob pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) 2N929, 2N930 . 8.0
2N929A, 2N930A - 6.0
Input Impedance hib ohms
(IE = 1.0 mAde, VCB = 5. 0 Vdc, f = 1.0 kHz) 25 32
Noise Figure NF dB
(IC = 10 pAde, VCE = 5.0 Vde, 2N929, 2N929A - 4.0
RS = 10 k ohms, f = 10 Hz to 15.7 kHz) 2N930, 2N930A - 3.0
2-125
2N956 For Specifications, See 2N718A Data.
2N960 (GERMANIUM)
2N961
2N962
2N962JAN AVAILABLE
2N964
2N964JAN AVAILA.BLE
2N965
2N966
CASE 22
(TO·18)
Collector connected to case
MAXIMUM RATINGS
--
500
~ 2.0 " , I I
III r-!.CI
ffi ::= 1 Vdc
--
1.5 +85"C
~ 1.2
~
¥ V .......... t"-
5 0.8
1.0 +25°C
~V r--. ......
~
u
0.6
,.-
,.-
TA = -55°C
/" "' ~
Vel = 0.5.Vdc
~ 0.4
~ V VeE = 1 Vdc T" = 25°C
~ 0.3 I I I
'"~ 0.2
. / '"
.J·D.IS '"
1 5 10 20 50 100 10 20 50 100
Ie. COLLECTOR CURRENT (mAde)
Ie. COllECTOR CURRENT (mAde)
2-126
2N960 SERIES (continued)
COLLECTOR·EMITTER SATURATION VOLTAGE
STORAGE TIME versus CIRCUIT RATIO versus AMBIENT TEMPERATURE
~
~
40 ~ 0,4
2N964, 2N965, 2N966
----
til ~2N960, 2N961, 2N962
~
----
S!
Ie: 1,=10 -, ,,"" ~
~
-- - :,.:::. ::-
0,3
- -1;: ~ ~oomAde
100 mAde
50 mAde ~
i;;:
ffi
50 mAde ....t:,;:.
T~
Ie -IOmAde
0.2
:: -~ ~mAde
r--II' :::::4112
R, = 1000
R,= I KO
i
~
o
~
O. I - - -- 0
"""'- .::::",
-1-
I
-
8 Ie 12mAt - r--
o 10 20 ! 0
5 15
,} -75 -50 -25 0 +25 -:-50 +75 +100
Ie II,,, CIRCUIT CURRENT RATIO
TAO AMBIENT TEMPERATURE 1°C)
2-127
2N960 SERIES (continued)
ELECTRICAL CHARACTERISTICS (continued)
2N963 (GERMANIUM)
2N967
CASE22~
PNP germanium epitaxial mesa transistors for high-
speed switching applications.
(TO-1S)
Collector
connected to case
MAXIMUM RATINGS
2-128
2N963, 2N967 (continued)
2-129
2N963, 2N967 (continued)
~ 0.7
T. = 25°C 0.8
~ 0.6
~
::>
~
~ 0.4
0.5
" !'-o.. 50 mAde
..... ..........
1
0.61--==I""-"=~I--+=-+--+--I
0.4 I-.......!:::::::--F:::::.+--...LJ
~ 0.3 m de
r-
I--+=,.,r=-
~ 0.2 " 0.2
~ 0.1
0.1
Ie 2 mAde-
COLLECTOR LATCH·UP VOLTAGE TEST CIRCUIT 10·mA (Ie) SWITCHING TIME TEST CIRCUIT
TYPf RSAMPLING
TEKTRONIX 541 RESiSTOR
OR EQU IYALENT 280 0 20 [I -3.1 Ydc
+0.3 Ydc o
SOOn INPUT SIGNAL
<>--'IN'> +1.25 Ydc NOTE,
4.BK Ic =-10mAdc
°li
1... =-1 mAde
-2.5Vdc In = +0.25 mAde
200 {I
Y" (0) = +1.25 Ydc
PULSE VOLTS USE TEKTROIlIX TYl'E "R"
Vee = -lOVdc -5.4 Yde INTERNAL RESISTANCE PLUG·IN
•TEKTRONIX TYPE 581 SCOPE
OR EQUIYALENT
BASE AND COLLECTOR CUTOFF CURRENT TEST CIRCUIT 10·mA (Ie) TOTAL CONTROL CHARGE TEST CIRCUIT
-3.1 Ydc
'V" 10011 A' 300 {I
NOTE,
Ie = -10 mAde
U I. = -1 mAde
-O.lBVde
+0.3Vde
-5.4 Ydc
It pOint A
.,..
nJCt 1
10 ns
MAX
I -
..
T
20 ...
MAX
+V --
-
I I I I .... .! 1. .1
ffi 1.5 '-'
-!t:. ~II
~ 1.2 - .~.
.\ 85"C.....
I I L
I
5
~ 400
Vde
-
+?5°C
!Z 0.8 '"....o
~ lOO =
~ 0.6
./ DoC V Vel 0.5 Vdc "
~
V ." 1 ~Z 200
~ 0.4
~ 0.3
.L' ....... =<
'"....
..
:::;
~ 0.2
. / ..-r:: = -5rC
Vc~
I
== 1 Vdc ~
~
100
" ~ 25°C
o
Z 0.15
..... I III I I I .£ 0
i 1 10 20 50 2 10 20 50
Ie. COllECTOR CURRENT (mAde) Ie, COllECTOR CURRENT (mAde)
2-130
2N964 (GERMANIUM)
For Specifications, See 2N960 Data.
2N964A (GERMANIUM)
CASE 22
(TO-18)
Collector Connected to Case
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
FIGURE 1 FIGURE 2
280[1 20" -3.1Vdc 480 2H 5.2 Vdc
..--""""'~"""",'Ir--<>
INPUT SIGNAL TYPE R SAMPLING INPUT SIGNAL TYPE R SAMPLING
+ 1.25 Vdc RESISTOR + 1 25 Vdr. RESISTOR
4.8K NOTL 900 n NOTE·
Ie::::: -10 mAde I, = -100 mAde
200 !l 1'1 = -1 mAde 100 H 1,1:::: ·--5 mAde
PULSE VOLTS III= +0.25 mAde PULSE VOLTS 1'1 -= + 1.25 mAde
-5.4 Vdc VOl = + 1.25 Vdc 5.7Vdc VOl :-:: + 1.25 Vdc
INTERNAL RESISTANCE INTERNAL RESISTANCE
USE TEKTRONIX TYPE "R" USE TEKTRONIX TYPE .oR"
PLUG-IN PLUG-IN
TEKTRONIX TYPE 581 SCOPE TEKTRONIX TYPE 581 SCOPE
OR EQUIVALENT OR EQUIVALENT
IO-mA (Ie! SWITCHING TIME TEST CIRCUIT IOO-mA (Iel SWITCHING TIME TEST CIRCUIT
2-131
2N964A (continued)
ELECTRICAL CHARACTERISTICS (T A ~ 25°C unless otherwise noted)
ON CHARACTERISTICS
DC Current Gain 8 hFE
(IC =10 mAde, VCE =0.3 Vde) 40 80 -
CIc
=10 mAde, VCE =0.3 Vde, TJ = _55°C) 20 45 -
(IC = 50 mAde, VCE = 1 Vde) 48 105 -
(IC = 100 mAde, VCE = 1 Vde) 40 95 -
<Ie =100 mAdc, VCE = 1 Vde, T J =850 C) 35 85 -
Collector Saturation Voltage 5 VCE(sat) Vde
(IC = 10 mAde, IB = 1 mAde) - 0.1 0.18
(IC =50 mAde, IB =5 mAde) - 0.16 0.28
(IC = 100 mAde, IB = 10 mAde) - 0.22 0.4
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IE = 20 mAde, VCB = 1 Vdc, f = 100 MHz) 300 460 -
High-Frequency Current Gain hfe -
(IC = 20 mAde, VCE = 1 Vdc,f = 100 MHz) 3.0 4.6 -
Output CapaCitance 11 Cob pF
(VCB = 1 Vde, IE =0, f = 1 MHz) - 2.7 5.0
(VCB = 10 Vde, IE = 0, f = 1 MHz) - 2.2 4.0
2-132
2N964A (continued)
1
80 \
\
°tf
- 2.5 Vdc
.220 0
OR EQUIVALENT
t,< 2.0 ns
LATCH-FREE
LOAD LINE AREA
\ Vee = -11.5 Vdc
20 \ 1\
tor, but may produce the re duction in output voltage noted above
and cause high power dissipation.
\ AREA OF \
LATCH-FREE OPERATION
WHEN It OF OUTPUT 1\
N41
10
Va, COLLECTOR-EMITIER VOLTAGE (VOLTS)
\
r\
15 20
~5·C
Va = 6V
,
...,"" ~
200 T,
ilOO
....z:
70
f
"- ')
::!
..,::>'"
50 - Vr ,
T,
w 55·;,.....--
'"
~
THRESHOLD -' /'
VOLTAGE
I .----1 /'
r
!::i 20 BASE LEAKAGE CURRENT TEST CIRCUIT
~
:& 10
~ T'=~5.C./~
:::>
:&
7 B••• L•• kag" Current_ In •. is defined as base leakage
~
:& current with both junctions reverse biased. Ie is
.,j always less than 1m. for Von> V'r' (V OH is off condi-
./
tion base bias, VT is base voltage at threshold of
2
,/ conduction.)
-0.5 o 05 1~ 15 2.0
Vo" BASE-EMInER REVERSE BIAS (VOLTS)
NOTE, Limit Curves are based on periodic engineering evaluation. Production Tests are made at points
indicated in the Electrical CharacteriStics Table.
2-133
2N964A (continued)
TJ 25°C ~.I
.~ VeE =0 0.15 + 2.2 Ie
0.7 @ le ll , 2.5
in \ I\,
!:;
0
\
~
.... 0.5 \
'" \
~> \ \ Ie - 100 mAde '-
'"
....
0
~ '\..
~0 0.3 " ~ ......
t:
::0 ~ 50 mA
~
--
:::>
::0
;::;:
c(
::0 \ i'-..
e
> 0.2
r-.... I-- 20mA
IOmA
0.15
0.2 0.3 0.5 1.0
IIII 10 20 30 50
-
o lei I, =0 10
....~
TJ 25!C
g 0.5 ~
-Ie/l, =0 10 .... VeEI.tl
'"~ is 9,e ( 55 to 25°C)
;:;
~ 0.6
it
~ V..... ....
o
i :;: -0.5
:1: ~ '":::>
~ 0.4 ~
Q,.
-1.0
::0
:::>
::0 i!i 9"
;::;: .... -1.5
c( VIElt.f)
::0
.; 0.2 -2.0
10 20 50 100 o 20 40 60 80 100
Ie. COLLECTOR CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
-- -
60
.... -
- --
--
z 50 ~VeE 1 Volt
- ....
:;;:
'".... 40
- --~
--- --- -- - '- -- -- -t-..,
---
is \\
- ... -' --
.~-
.-
'"
-
--- - ... ...
a:
:::>
<>
::0
:::>
::0
30
~
---\\\'-
-- \\\
TJ =0 85°C
Z 20
i
-~-
1--
... - \\'::: TJ
TJ
=0
=0
25°C
DoC
"'-
~
---
=0
1---
10
2 10 20 50 100
Ie. COLLECTOR CURRENT (mAde)
NOTE, Limit Curves are based on periodic engineering evaluation. Production Tests are made at points
indicated in the Electrical Characteristics Table.
2-134
2N964A (continued)
<>
\.
~
~
...
:Ii
...;::
!(l
1.2
1.1
" I,
:""-. 1'-0..
r-,... ' ...
" 1\
~ L-~
'"
r£
1.0
1.5 2 10
- 20
o
2
.... -.!o-1-14-
10 20
Ie, COLLECTOR CURRENT (mAde)
50 100
9c- FALL TIME FACTOR ACTIVE REGION TIME CONSTANT TEST CIRCUIT
~
1.0
I,..oo~ ....
.... 6000
~ / INPUT SIGNAL
PULSE GENERATOR
5.6K
i!!l 0.6
Ii
~ - I) ;A=TRI=TFE 500
..
'"
0
~
~
<.>
1.2
1.0
~ 1/
...
:Ii
0.8
V
...
;:: 0.6
(!J 1/
:! 0.4
0
Ii;
.,; 0.2
V
.0
0.1 0.2 0.5 1.0 10 20
1"11,,, CIRCUIT DRIVE RATIO
NOTE, Limit Curves are based on periodic engineering evaluation. Production Tests are made at points
indicated in the Electrical Characteristics Table.
2-135
2N964A (continued)
~
:.s...
lell, =10 ~ tU ..J..1~01H.Re"y JfC
i_+
I, = -1 mAde
O% , --90%
_t
~ ":' -=
-5.4 Vdc
.." TJ = 100''l at point A r1, -- J
~
:z: 200
-41! .. 20mv
10 ns MAX
'"'
-' MAX
0
....
'"z:
0
'"'~ 100
§ Y(,=25'C
lOb
lOa
10
--J TYPICAL
_LIMIT
g
...z:j
'"';:>
(3
~
~
;3
z:
0
;:: ~ C••
'"'z 4
~
....~
:E
:::>
--~
:E
~
:E ',C,.
--- --- --- --- C••
....
~
o
10
REVERSE BlAS (VOLTS)
NOTE, Limit Curves are based on periodiC engineering evaluation. Production Tests are made at points
indicated in the Electrical Characteristics Table.
2-136
2N965 (GERMANIUM)
2N966
For Specifications, See 2N960 Data.
2N967 (GERMANIUM)
For Specifications, See 2N963 Data.
CASE 22
(TO·1S)
\
Collector connected to case
PNP germanium mesa transistors for high-speed
switching applications.
MAXIMUM RATINGS
2-137
2N968 thru 2N975 (continued)
-
:&:
2.0 OS
.... ~
+ ?~ ~ 300
1.0
0.8
0.6
./
./
+25°C_
l.----" _ 550 C
-- ./
~
:&:
6 200
if
/
0.4
0.2
-!.---- ~
~
"
z
<Ii
z: 100
VcE =lVdc
T" = 25°C
O. 1
) ......-- V ~
0.1 0.2 0.5 1.0 ' 2.0 10 20 50 100
o
o 10 20 30 40 50
Ie. COLLECTOR CURRENT (mAde)
Ie, COLI ECTOR CURRENT (mAde)
COLLECTOR SATURATION VOLTAGE versus AMBIENT TEMPERATURE STORAGE TIME versus CIRCUIT CURRENT RATIO
g
"w
""
~
§! 0.25
o. 3
?
Ic=1 2 ~ ~
§
~
100
80 r----- Ie = 25 mAde
z
";::
)/ z
"'"
;;.
w TA = 25°C
~ o. 2
,,- V mAd,7""'~ '";::
1
60
Ie = 10 ~
~ I•• 4182
~
V ~ R, = 100 f!
B V ~ r-- I ~ 10 mAde R, lKn_
g
<.>
0.15
V - 40
-
~ - .. ~
--
I---llc/l,t lOl- 20
~ O. l 5 10 15 20
75-50 -25 0 +25 +50 + 75 + 100
T" AMBIENT TEMPERATURE (OC) lei I,,, CIRCUIT CURRENT RATIO
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO Vdc
(IC = 100 ",Adc, IE = 0) 2N968,2N972 15 25 -
2N969, 2N970, 2N973 , 2N974 12 20 -
2N971,2N975 7.0 15 -
Emitter-Base Breakdown Voltage BVEBO Vdc
(IE = 100 ",Adc,. IC = 0) 2N968, 2N972 2.5 - -
2N969,2N973 2.0 - -
2N970,2N974 1.25 - -
2N971 , 2N975 1.25 - -
Collector Cutoff Current ICES ",Adc
(VCE = 15 Vdc, VBE = 0) 2N968,2N972 - - 100
(VCE = 12 Vdc, VBE = 0) 2N969, 2N970, 2N973, 2N974 - - 100
(VCE = 7 Vdc, VBE = 0) 2N971,2N975 - - 100
2..,...138
2N968 thru 2N975 (continued)
Characteristic
ON CHARACTERISTICS
DC Current Gain
hFE
CIc = 10 mAde, VCE = O. 5 Vde) 2N968, 2N969, 2N970, 2N971 17 35 -
2N972, 2N973, 2N974, 2N975 40 75 -
CIc = 25 mAde, VCE = O. 7 Vde) 2N968, 2N969, 2N970, 2N971 20 40 -
Collector-Emitter Saturation Voltage
2N972, 2N973, 2N974, 2N975 40 85 -
VCE(sat) Vdc
CIc = 10 mAde, IB = 1 mAde) - 0.19 0.25
(Ic .. 25 mAde, IB = 1. 5 mAde) - 0.25 0.5
---
2N968,2N969 70 150
2N972,2N973 75 175
2N970, 2N971, 2N974, 2N975 100 275
2-139
2N978 (SILICON)
PNPSILICON
AMPLIFIER
TRANSISTOR
PNP SILICON ANNULAR TRANSISTOR
*MAXIMUM RATINGS
Rating Svmbol Value Unit
l~r
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltate
VCEO
VCB
VEB
20
30
5_0
Vde
Vde
Vde
~::: I
DIAl OIA l
I w,o
-T
Collector Current IC 600 mAde
Total Device Dissipation@TA = 25°C PD 0.33 Watt
Derate above 25°C 2.64 mW/oC
Total Device Dissipation @T C ~ 25°C PD 1.25 Watts
j
0.500
10 mW/oC
~OIA
Derate above 25°C
Operating and Storage Junction TJ,T stg -65 to + 200 °c
Temperature Range
Pin 1. Emitter
2. Base 1
3. Collector
2-140
2N978 (continued)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( 1) VCEO(sus) 20 - Vde
(lC = 100 mAde, IB =0)
Collector-Base Breakdown Vololage BVCBO 30 - Vde
(lC = 1.0 mAde, IE = 0)
Collector Cutoff Current ICBO "Ade
(VCB = 10 Vde, IE = 0 - 5.0
(VCB = 10 Vde, IE = 0, TA = 150o C) - 200
Emitter Cutoff Current lEBO - 200 "Ade
(VEB = 1.0 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain(l) hFE -
(lC = 30 mAde, VCE = 10 Vde) 15 -
(~C = 150 mAde, VCE = 10 Vde) 15 60
Collector-Emitter Saturation Voltage VCE(seti - 1.5 Vde
(lC = 150 mAde, IB = 15 mAde)
.Base-E mitter Saturation Voltage VBE(seti - 1.5 Vdc
(lC = 150 mAde, IB = 15 mAde)
SMALL-SIGNAL CHARACTERISTICS
Output Capecitance Cob - 45 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small-Signal Current Gain hfe 2.0 - -
(lC = 50 mAde, VCE = 10 Vde, f = 20 MHz)
2-141
2N985 (GERMANIUM)
CAU22
(TO-lS)
MAXIMUM RATINGS
Device Dissipation
@ TC = 25°C PD 300 mW
Derate above 25°C 4.0 mW/oC
Device Dissipation
@ TA = 25°C PD 150 mW
Derate above 25°C 2.0 mW/oC
Vcc= -lO.3V
~--------~---------oVoo,
INPUT PULSE
I
I
t. "'" 1 ns I
t,::=: 1 ns ~
PW~200ns
2-142
2N985 (continued)
Turn-on Time ns
(IC = 10 mAde, IBI = 5 mAde, VBE(O) = 1.25 Vde)
ton - 35
Turn-off Time ns
(Ie = 10 mAde, IB1 = 5 mAde, IB2 = 1.25 rnA)
toft - 80
2N 995 (SILICON)
For Specifications, See 2N869 Data,
2-143
2N996 (SILICON)
/!
*MAXIMUM RATINGS
Rating Svmbol Value Unit
Collector-Emitter Voltage VCEO 12 Vdc
Collector-Base Voltage VCB 15 Vdc
Emitter-Base Voltage VEB 4.0 Vdc
Collector Current IC 200 mAde
0.028
0.04ll
2-144
2N996 (continued)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage I 1) VCEOlsus) 12 - Vdc
IIc = 10 mAde, IB = 0)
Coliector~Base Breakdown Voltage BVCBO 15 - Vde
IIc = 10 "Ade, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 4.0 - Vde
liE = 10 "Ade, IC = 0)
Collector Cutoff Current ICBO
IVCB = 10 Vde, IE = 0) - 0.005 "Ade
IVCB = 10 Vde, IE = 0, TA = 150°C) - 15 "Ade
Emitter Cutoff Current lEBO - 10 "Ade
IVBE = 4.0 Vde, I C = 0)
ON CHARACTERISTICS
DC Current Gain hFE 35 - -
IIC = 20 mAde, VCE = 1.0 Vde)
Collector-Emitter Saturation Voltage VCElsatl - 0.3 Vde
IIc = 60 mAde, IB = 2.0 mAde)
Base-Emitter Saturation Voltage VBElsat) - 0.95 Vde
(lc = 20 mAde, IB = 2.0 mAde I
OYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Produet(21 fT 100 - MHz
(lC = 10 mAde, VCE = 10 Vde, f = 100 MHzl
Output Capacitance Cob - 10 pF
(VCB = 10 Vde, IE = 0, f = 100 kHz to 1.0 MHzl
2-145
2N998 (SILICON)
B,
CASE 20(8)
(TO·72)
MAXIMUM RATINGS
2-146
2N998 (continued)
ON CHARACTERISTICS
DC Current Gain ~ " hFE -
(Ie = 1 mAde, YCE = 5 Yde) 600 -
(Ie = 10 mAde, YCE = 5 Yde) 1,600 8,000
(IC = 100 mAde, YCE = 5 Yde) 2,000 -
(Ie = 10 mAde, YCE = 5 Vde, measured 25 -
across each transistor within the device)
DYNAMIC CHARACTERISTICS
Output Capacitance Cob pF
(YCB = 10 Yde, IE = 0, r = 140 kHz) - 30
Input Capacitance C lb pF
(Y BE = 0.5 Yde, Ie = 0, r = 140 kHz) - 50
2-147
2N1008, A, B (GERMANIUM)
2Nl008B JAN AVAILABLE
CASE31(~
PNP germanium transistor for audio driver and med-
ium speed switching applications.
,1)_~
(TO-5)
All ,leads isolated
MAXIMUM RATINGS
:
~~g: ~~ ~~~! T A = S50C) ~:~~~: --- 5.0 10
--- --- 500
(VCB= 25 Vdc) 2N100SA --- 5.0 10
(VCB = 25 Vdc, TA = S50C)2N100SA --- --- 500
(VCB = 45 Vdc) 2N100SB --- 7.0 15
(VCB = 45 Vdc, ~A = S50C) 2N100SB --- --- 750
2-148
2N 1011 (GERMANIUM)
~
PNP germanium power transistor for general
purpose power amplifier and switching applications in
military and industrial equipment. Operating temper-
CASE 11 ature range and power dissipation exceed military
(TO-3) specifications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
100
90
,,~
., 80
""'-
::::
g
:c6 60
POWER· TEMPERATURE
DERATING CURVE
i
rIl
is
..
~
~
40 '" ~,
"-,,~
~Q 20
10
o
o 20 40 60 80
"" 100
2-149
2Nl011 (continued)
IC = 3 Adc
IB = 200 mAdc
Collector-Emitter Voltage BVCEO 40 - Vdc
IC = 300 mAdc
IB = 0
Collector'-Emitter Voltage BVCES 80 - Vdc
Ie= 300 mAdc
VEB = 0
High- Temperature Operation
TC = +90'C min
Collector Cutoff Current I CBO - 20 mAde
VCB = 30 Vdc
IE = 0
2-150
2N1021 (GERMANIUM)
2Nl022
---
3 60
-- ~
_IA
2.6
-----=-
2 40
20 ~
o o
o 25 50 75
~
- ~
100 110 125
TEMPERATURE (Oe)
2-151
2Nl021, 2Nl022 (continued)
DC CurreQt Gain
(IC = 1 Ade, VCE = 1.5 Vdc)
hFE
40 -
-
(Ie = 3 Adc, VCE = 1.5 Vdc) 35 -
(Ie = 5 Adc, VCE = 1.5 Vdc) 30 90
(IC .. 7 Ade, VCE = 1.5 Vdc) 22 -
Input Impedance hte ohms
(Ie = 1.0 Ade, \TCE = 1.5 Vdc) - 28
2-152
2N1038 thru 2N 1041 (GERMANIUM)
2N2552 thru 2N2559
PNP GERMANIUM
PNP GERMANIUM MEDIUM POWER TRANSISTORS POWER TRANSISTORS
40-100 VOLTS
20 WATTS
· .. designed for relay drivers, pulse amplifiers, audio amplifiers and
high-current switching applications.
:~I:D·E
0.310 DIA iUMI
*MAXIMUM RATINGS [J4O D.39O
Rating
Vdc
o.011 0
0.028
,,-nfi-+ l
1.5
--~
BAS[O.0101
~ ~~j
VeB
Emitter-Ba.. Voltage VEB ---- 20
- Vdc
Collector Current - Continuous Ie ---- 3.0
----- Adc
---
"Base Current - Continuous IB 1.0 Adc 2N1038-2N1041 CASE 180
"" [-~1.500MIN
-Indicates JEDEC Registered Data.
Note 1: Case Temperatur. shall be measured 0.100 ± 0.010 inches above the
seating plane. IIII =+ ai~
0.022
•• Motorola guarantees this data In addition to the JEOEC
Registered Data shown. 0.485
om
{j 1l2.2lIUNF.2A
iillil
1. Emitter
2. Base
SEATING PLANE- 3. Collector
2N2556-2N2559 CASE 184
Collector Connected to Case
(All Tvpes)
2-153
2Nl038 thru 2Nl041/2N2552 thru 2N2559 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC " 50 n\Ade, VCE = O. 5 Vde) 33 200
(Ie = 1. 0 Ade, VCE = 0.5 Vdc) 20 60
SMALL·SIGNAL CHARACTERISTICS
Small-Signal Current Gain hie -
(I C = 500 mAde, V CE = 1. 5 Vde, I " 1. 0 kHz) 18 72
2-154
2Nl 042 thru 2Nl 045 (GERMANIUM)
2N2560 thru 2N2567
PNP GERMANIUM
PNP GERMANIUM MEDIUM POWER TRANSISTORS POWER TRANSISTORS
40-100 VOLTS
20 WATTS
:molA~
illi
0.310 DIA Q.lliI
*MAXIMUM RATINGS [340 0.390
~ ~ ~j
VeB
Emitter·Ba.. Voltage
Collector Current - Continuous
VEB
IC
-- 20
3.5
-- Vdc
Adc
------ -
Base Current - Continuous IB 1.0 Adc 2N2564 - 2N2567 CASE 180
r~.!~~
2. Base
:< /j,
'"''"~'" .it ~~~O/'.Ill!
3. Collector
Total Device Dissipation @TC =25°C Po ----20 Watts
W/oC
~~
-J """
Derate above 25°C (Note 1) -0.267----
IIIII1
~
""j "'"
**Operating and Storage Junction TJ,Tstg - -65 to +100 - - - °c O.3!5
1f.~65
L-:Je--
0012
I ~~o M~8 ~.421 'i-...."'<..PIO
il"U1y
Temperature Range SEAT!NG
PLANE
~~~
THERMAL CHARACTERISTICS 2N2560 - 2N2563 CASE 183
Characteristic
Thermal Resistance. Junction to Case
2-155
2N1042 thru 2N1045/2N2560 thru 2N2567 (continued)
*ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
I Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage VCEO(sus) Vde
(lC = 100 mAde, IB = 0) 2Nl042,2N2560,2N2564 30 -
2N 1043,2N2561,2N2565 40 -
2N 1044,2N2562,2N2566 50 -
2N 1045,2N2563,2N2567 60 -
Collector Cutoff Current ICEO mAde
(VCE = 15 Vde, IB = 0) 2N 1042,2N2560,2N2564 - 25
(VCE = 20 Vde, IB = 0) 2Nl043,2N2561,2N2565 - 20
(VCE = 25 Vde, IB = 0) 2Nl044,2N2562,2N2566 - 20
(VCE = 30 Vde, IB = 0) 2Nl045,2N2563,2N2567 - 20
'Collector-Emitter Cutoff Current ICEX mAde
(VCE = 40 Vde, VBE(off) = 0.2 Vde) 2Nl042,2N2560,2N2564 - 0.65
(VCE = 60 Vde, VBE(off) = 0.2 Vde) 2Nl043,2N2561,2N2565 - 0.65
(VCE = 80 Vde, VBE(off) = 0.2 Vde) 2N 1044,2N2562,2N2566 - 0.65
(VCE = 100 Vde, V8E(off) = 0.2 Vde) 2Nl045,2N2563,2N2567 - 0.65
(V CE = 20 Vde, V BE (off) = 0.2 Vde, T C = 85°C) 2Nl042,2N2560,2N2564 - 5.0
(VCE = 30 Vde, VBE(off) =0.2 Vde, TC = 85°C) 2N 1043,2N 2561,2N2565 - 5.0
(VCE = 40 Vde, VBE(off) =0.2 Vde, TC = 85°C) 2N 1044,2N2562,2N2566 - 5.0
(VCE = 50 Vde, VBE(off) = 0.2 Vde, TC = 85°C) 2N 1045.2N2563,2N2567 - 5.0
Collector Cutoff Current ' le80 !lAde
(VCB = 20 Vde, IE = 0) 2N 1042,2N2560,2N2564 - 125
(VCB = 30 Vde, IE = 0) 2N 1043,2N2561,.2N2565 - 125
(VCB = 40 Vde, IE = 0) 2Nl044,2N2562,2N2566 - 125
(VC8 = 50 Vde, IE = 0) 2Nl045,2N2563,2N2567 - 125
**(VCB = 40 Vde, IE = 0) 2N 1042,2N2560,2N2564 - 750
**(VCB = 60 Vde, IE = 0) 2N 1043,2N2561,2N2565 - 750
**(VCB = 80 Vde, IE = 0) 2Nl044,2N2562,2N2566 - 750
**(VCB = 100 Vde, IE = 0) 2N 1045,2N2563,2N2567 - 750
Emitter Cutoff Current IE80 - 650 !lAde
(VBE = 20 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain hFE -
(lC = 50 mAde, VCE = 0.5 Vdcl 50 -
(lC = 1.0Ade, VCE = 1.0 Vde) - 150
(lC = 3.0 Ade, VeE = 1.0 Vde) 20 60
Collector-Emitter Saturation Voltage VCE(,at) Vde
(lC= 1.0Ade,IB = 100 mAde) - 0.25
(lC = 3.0 Ade, IB = 300 mAde) - 0.75
Base-Emitter Input Voltage VBE - 1.5 Vde
(lC = 3.0 Ade, VCE = 1.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain hfe 25 100 -
(lC = 500 mAde, VCE = 1.5 Vde, f = 1.0 kHz)
Small-Signal Current Gain Ihfel 2.0 - -
(Ie = 500 mAde, VCE = 1.5 Vde, f = 125 kHz)
2-156
2N 1073 A, B(GERMANIUM) I
CASE4-~
(TO_41)1J4~
PNP germanium power transistors for high-voltage
power switching applications.
MAXIMUM RATINGS
iloo
-
~ 60
80 - k:- 85 WAITS MAX
........... The maximum eonlinuous power is relaled 10
maximum junction temperature by the thermal
~
"'
resislanee factor. This curve has a value of 85
40 watts at a case temperature of 25'C and is 0
20 ~
iJ'i
....... ~OOC walts at 110'C with a linear relalion between
o 0 the Iwo temperatures such that:
ffi 0 25 50 75 100 125 110' - Te
~ Allowable p. = -1-.0- Watts
... Te. CASE TEMPERATURE (OC)
~
SAFE OPERATING AREAS - PULSE CONDITIONS
2Nl073 2Nl073A 2N1073B
10
500", :: 500",
S.O
V\I
- "'" 5m,
250~,
, 'V
25~", ,=
,.:;.c:-
3.0
\ IN \ 1m,
~ \ \.\ '\ Sm,
i"- " ~ ~ I-- "" 50",
~
•.,
0.3
'\
I'.,
is
'"'
~
'"
~
g
0.1
O~ .,..l
1\
OC-
"'r--.. '"t"". r-....
OC-
;;i
~
.os
.03
.01
o 10 20 30 40 10 20 30 40 SO 60 70 80 0 10 20 30 40 50 60 70 80 90 100 110 120
Ve•• COLLECTOR-EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate lc - (Duty cycle of the excursions make no significant
VCE limits below which the.device will not go into change 1D these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum Tl, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-157
2Nl073, A, B (continued)
ELECTRICAL CHARACTERISTICS (TA = 25'C unless otherwise noted)
Storage Time t
s
- 1.2 - /1s
*To avoid excessive heating of collector junction, perform this test with a sweep method.
COLLECTOR CURRENT versus BASE CURRENT COLLECTOR CURRENT versus DRIVE VOLTAGE
10
r---- J
- 55 ° C
+25°C
+IOOOC
/
/V
f
/; ~ Vel =- 2 V
2-158
2Nl073, A, B (continued)
DC CURRENT GAIN versus COLLECTOR CURRENT COLLECTOR CURRENT versus DRIVE VOLTAGE
50 25
40 \ ' \
\ \~ ~ Vel =::: -2 V Ve• = MAX. RATING
/ I
~~~
~ - _55°C_
+ 100°C)
/
7 /
~
./
10
- +25 O C
+IOOoC
/ /
+2~ -5}!
o
2 ' 10 12 +0.3 +0.2 +0.1 -0.1 -0.2 - 0.3
Ie. COLLECTOR CURRENT (AMP) V". BASE·EMITTER VOLTAGE (VOLTS)
MERCURY 4[1
SWITCH 0 -20!l
~
" '.: + -
I--------.-J
PULSE CONDITIONS; Ie
12 v
....._ _ _ _ _ _+-1111---_ _ _ _ _ _--J
2N 10 99 (GERMANIUM)
For Specifications, See 2N277 Data.
2N 1100 (GERMANIUM)
For SpeCifications, See 2N174 Data.
2-159
2N 1120 (GERMANIUM)
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
100
90
~
'"
80
"
POWER·TEMPERATURE
DERATING CURVE
~
.§
-:;j
.So
'"
60 """ ~
is'" ~
"
0
...
Q)
p.,
40
",
p.,A 20
"- "-
10
o
o 20 40 60
o
T C' Case Temperature ( C)
80
""" 100
2-160
2N 1120 (continued)
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 2.0 Vdc)
hFE
- 100
-
(IC = 10.0 Adc, VCE = 2.0 Vdc) 20 50
2-161
2N 1131 (SILl.CON)
2N1131JAN AVAILABLE
2Nl131A
2N1991
PNPSILICON
AMPLIFIER
AND
SWITCHING
PNP SILICON ANNULAR TRANSISTORS TRANSISTORS
· .. designed for medium-speed switching and amplifier applications
where low DC current gain is essential.
rr:=j
2N1131
2N1131A
• Low DC Current Gain -
hFE = 45 (Max) @ IC = 150 mAdc - 2N1131,A j
O"09m1~~~EATING
II
• Turn-On Time - ton = 45 ns (Max) - 2N 1131A
• Turn-Off Time - toff = 35 ns (Max) - 2N1131A
+=
0500 PLANE
L M!.!iDlA
0,019
Pin 1 Emili.,
*MAXIMUM RATINGS
CASE 79 (1)
Rating Symbol 2N1131 2N1131A 2N1991 Unit
Cpllector·Emitter Voltage VeEO 35 40 20 Vde
Collector·Emitter Voltage VeER 50 50 - Vde
Collector·Ba•• Voltage VeB 50 60 30 Vde Tccanvel1incheslomitlimetersmulliplybyZ5.4.
AIIJEOEC TO·39 dimensions and notl?S apply.
Emitter·Base Voltage VEB 5.0 5.0 5.0 Vde
Collector Current - Continuous Ie 600 600 600 mAde
rFr-m-I~
Total Device Dissipation@TA==2SoC Po 0.6 0.6 0.6 Watt
2N1991 °·JJ5~
Derate above 250 e 4.0 4.0 4.8 mW/oC
Total Device Dissipation@Te= 250 e
"""
Operating Junction Temperature Range
Storage Temperature Range
TJ
T.tg
175
-65 to +200
175 150
-65 to
°c
°c
LIT 1f IT
o.ols--lLo.029
+150 iilil9 ·11· ._'y
THERMAL CHARACTERISTICS
Wel!lht '" 1.15 gram
',,,",,,","_"m;ll'm._,,,,,,,,b,25A.
Alt JEDECTO·5dimension$3nd notes apply.
~ 0&Sll //
450T.P.O.O
Characteristic Symbol 2N1131,A 2N1991 Unit
CASE 31 (1) --.L
Thermal Resistance, Junction to Case 8Je 75 62.5 °elW TO·S
°e/w Pin 1. Emiller
Thermal Resistance, Junction to Ambient 8JA 250 208 2. BaSB
1 Collector
*Indicates JEOeC Registered Data.
MODEL
--u- " fl.')
ATTENUATOR
Zo = 170 Ohm.
VCC = -15 Volt.
VBB = 1.5 Volts
Vp = -7.5 Volts
Pulse Width = 150 n.
2-162
2N1131, 2N1131A, 2N1991 (continued)
*ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage( 1) VCEO(sus) Vdc
IIc = 100 mAde, IB = 0) 2N1131 35 -
2N1131A 40 -
2N1991 20 -
Collector-Emitter Sustaining Voltage(l) VCER(sus) 50 - Vde
IIc = 100 mAde, RBE';; 10 ohms) 2N1131,2N1131A
Collector-Base Breakdown Voltage BVCBO Vdc
IIc = 100 /lAde, IE = 0) 2N1131A 60 -
IIc = 1.0 mAde, IE = 0) 2N1991 30 -
Emitter-Base Breakdown Voltage BVEBO 5_0 - Vde
liE = 1_0 mAde, IC = 0) 2Nl131A
Collector Cutoff Current ICBO /lAde
(VCB = 30 Vde, IE = 0) 2N1131 - 1.0
(VCB = 30 Vde, IE = 0, T A = +1500 C) 2Nl131 - 100
(VCB = 50 Vdc, IE = 0) 2Nl131 - 100
(VCB = 45 Vde, IE = 0) 2N1131A - 0.5
(VCB = 45 Vde, IE = 0, TA = +150o C) 2Nl131A - 50
(VCB = 10 Vde, IE = 0) 2N1991 - 5.0
(VCB = 10 Vde, IE = 0, TA = +150o C) 2N1991 - 200
Emitter Cutoff Current lEBO /lAdc
(VSE = 2.0 Vde, IC = 0) 2Nl131 - 100
(VSE = 5.0 Vde, IC = 0) 2N1131A - 100
(VBE = 1.0 Vde, IC = 0) 2N1991 - 200
ON CHARACTERISTICS
DC Current Gain hFE -
IIc = 5.0 mAdc, VCE = 10 Vdc) 2Nl131,2Nl131A 15 -
IIc = 30 mAde, VCE = 10 Vde) 2N1991 15 -
IIc = 150 mAde, VCE = 10 Vde) 2Nl131,2Nl131A 20 45
2N1991 15 60
Collector-Emitter Saturation Voltage VCE(sat) - 1.5 Vde
IIc = 150 mAde, IS = 15 mAdc)
Base-Emitter Saturation Voltage VBElsa!) Vdc
IIc = 150 mAde, IB = 15 mAdc) 2N1131,2Nl131A - 1.3
2N1991 - 1.5
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Sandwidth Produetl2) IT MHz
IIc = 50 mAde, VCE = 10 Vde, 1= 20 MHz) 2Nl131,2N1131A 50 -
2N1991 40 -
Output Capacitance Cob pF
(VCS = 10 Vde, IE = 0, I = 140 kHz) 2N1131,2N1991 - 45
(VCS = 10 Vde, IE = 0, I = 1.0 MHz) 2Nl131A - 30
I nput Capacitance Cib pF
(VES = 0.5 Vde, Ie= 0, I = 140 kHz) 2N1131 - 80
IVEe = 0.5 Vde, IC = 0, I = 1.0 MHz) 2N1131A - 80
I nput Impedance hib ohms
(lC = 1.0 mAdc, VCE = 5 .. 0 Vdc, I
= 1.0 kHz) 2Nl131,2N1131A 25 35
(lC = 5.0 mAde, VCE = 10 Vdc, I = 1.0 kHz) 2N1131,2N1131A - 10
Voltage Feedback Ratio hrb X 10"4
(lC = 1.0 mAde, VCE = 5.0 Vde, f= 1.0 kHz) 2Nl131,2N1131A - 8.0
IIc = 5.0 mAde, VCE = 10 Vde, I = 1.0 kHz) 2Nl131,2Nl131A - 8.0
Small-Signal Current Gain hfe -
(lC = 1.0 mAde, VCE = 5.0 Vde, I= 1.0 kHz) 2Nl131,2Nl131A 15 50
IIC = 5.0 mAde, VCE = 10 Vdc, I = 1.0 kHz) 2N1131,2N1131A 20 -
Output Admittance hob IJ.mhos
(lC = 1.0 mAde, VCE = 5.0 Vde, I = 1.0 kHz) 2N1131,2N1131A - 1.0
(lC = 5.0 mAde, VCE = 10 Vdc, I = 1.0 kHz) 2N1131,2N1131A - 5.0
2-163
2N 1132 ,A (SILICON)
For Specifications, See 2N722 Data
2N 1141
thru 2N (GERMANIUM)1143
2Nl142 JAN AVAILABLE
2N1195
2N1195 JAN AVAILABLE
CASE 31
(TO-5)
MAXIMUM RATINGS
2-164
2Nl141-2Nl143, 2Nl195 (continued)
Cha racteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO Vdc
(IC = 100 /lAde, IE = 0) 2N1141 35 45 -
2N1142 30 45 -
2N1143 25 45 -
2N1195 30 45 -
Emitter-Base Breakdown Voltage BVEBO Vdc
(IE ; 100 fJ.Adc , IC = 0) 2N1141 1.0 1.3 -
2N1142 0.7 1.3 -
2N1143 0.5 1.3 -
2N1195 1.0 1.3 -
Collector Cutoff Current I CBO fJ.Adc
(VCB = 15 Vdc, IE = 0) - 0.5 5.0
(VCB = 20 Vdc, IE = 0) - 0.5 5.0
Emitter Cutoff Current lEBO fJ.Adc
(VBE = 0.5 Vdc, IC = 0) - 0.2 -
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 10 mAde, VCE = 10 Vde) 2N1141, 2N1142, 2N1l43 10 25 -
(IC = 10 mAde, VCE = 10 Vde) 2N1195 - 25 -
Collector-Emitter Saturation Voltage Vde
VCE(sat)
(IC = 50 mAde, IB = 10 mAde) 2N1141, 2N1l42, 2N1143 - 0.185 2.0
(IC = 50 mAde, IB = 10 mAde) 2N1195 - 0.185 -
2-165
2Nl141.2N1143, 2N1195 (continued)
Cha racteristic
SMALLoSlGNAL CHARACTERISTICS
Common-Base Cutoff Frequency
nc ~b MHz
= 10 mAdc, VCE = 10 Vdc) All Types - 1000 -
Collector Transition Capacitance CTC pF
(VCB = 10 Vdc, IE =0, f = 1 MHz) 2N1141 - 1.1 1.5
-- -
2N1141, 2N1142, 2N1143 10
2N1195 10 20
Input Impedance hib Ohms
(IC = 10 mAdc, VCB = 10 Vdc, f = 1 kHz)
2N1141, 2N1142, 2N1143
2N1195
-
-
3.6
3.6
-
10
Voltage Feedback Ratio
(Ic = 10 mAdc, VCB = 10 Vdc, f = 1 kHz)
hrb -
2N1141,2N1142,2N1143 - 0.0013 -
2N1195 - 0.0013 0.003
Collector-Base Time Constant r' C ps
(IE = 3 mAdc, VCB = 10 Vdc, f =30 MHz) b c
All Types - 23 -
Extrinsic Base Resistance r' Ohms
(IC = 10 mAdc, VCE = 10 Vdc, f =250 MHz) b
--
2N1141 65 70
2N1142 80 -
2N1143 - 110 -
2N1195 - 65 80
Collector Series Resistance r' Ohms
c
(IE = 10 mAdc, VCB = 10 Vdc) All Types - 2.0 -
Noise Figure NF dB
(IE = 0.8 mAde, VCE = 5 Vdc, RS = 300 ohms, f =4. 5 MHz) ,
-- -
2N1141,2N1195 ' 3.0
--
2N1142 3.5
2N1143 - 4.0
(IE = 1 mAdc, VCE = 10 Vdc, RS = 75 ohms, f = 100 MHz)
2N1141
2N1142,2N1195
-- 4.0
4.5 --
2N1143 - 5.0 -
(IE = 1 mAdc, VCE = 10 Vdc, RS = 50 ohms, f =200 MHz)
2N1141
2N1142,2N1195
-- 5.5
6.0
-
--
2N1143 - 6.5
Oscillator Efficiency %
71
(VCE = 20 Vdc, IC = 10 mAdc, f =400 MHz)
-- -
2N1141 20
2N1142 18 -
2N1143
2N1195
-- 12
18
-
-
2-166
2Nl141-2Nl143, 2Nl195 (continued)
750 r----~-..,-_r--,
1 III I
-
~9
50 TA=25°C -
45 - , 0.9
-40
!!Z: 35 i Y
W
0.8
0.7
g§30
V 0.6/
-300 mW ,_ -
B 25
@i
~ 20
V ...... -,0.5
.~
, ..],,0:4
8 15 ~
150 ,.g1O Vo.i) ..
.....t"'"u·V I t -0-
·1~O.lmA .....i. .O'j,.
o
25 50 75 100 o 10 15 20 25 30 40 50
TA,AMBIENT TEMPERATURE I"C) V,. COLLECTOR·EMlmR VOLTAGE (Vdc)
20 -v~. 15Vdc
100 1-~f--+--+--h..-m'T""i
"U
10 /
~ 5.0
/
i
=>
'-'
2.0
1.0
,I
0.5
~
'-' 0.2 /
§"" 0.1
;j 0.05
0
'-' /
jO.02
/
0.01
O~~~LL~ ....~~~ 0.005
0.40 0.45 0.50 0.55 0.60 0.65 0.70 -75 -50 -25 25 50 75 100
v•• BASE·EMITTER VOLTAGE (vile) T" JUNCTION TEMPERATURE rC)
20
100 t-::+-~:-:-t--t--+--.Jfr-+---l TA ~'25"C
f = 100 kHz
C,.
2Ot---t---t-:HC--t--t-+-+--..1 C.
O~~~~~~~~~-J
o 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 I
0.1 0.2 0.5 1.0 2 5 10 20 50
V_" COLLECTOR SATURATION VOLTAGE (Vile) REVERSE BIAS VOLTAGE (VOLTS)
2~167
2Nl141·2Nl143, 2Nl195 (continued)
26
V
POWER GAIN vs. v.. -
1.= 10 mAde
26
/
- POWER GAIN vs. I.
V.. =-IOVde
r--
- --
iii' iii'
6~
3!
,;; 24 1\
"
iil
c;:
i:iI I-
f---
NOISE FIGURE vs. V..
1.= 10mAdc
4 ~
az i22 NOI IE FIGURE vs. I.
V.. =-IOVdc
I 70 MC NEUTRAliZED & MATCHED 20
T. = 25'C 70 MC N~UTRALIZiD & MATCHED
I I I I o o
T.=25 C I
o o
o
o 4 6 8 W ~ M ~ 6 8 W· 12 14 16
V... COLLECTOR BASE VOLTAGE (Vdc) I•• EMITTER CURRENT (mAde)
---" "
YeISllS FREQUENCY
r-....
...... r-,
......
V
r-.......Pg
V,,_-IOVdc
le=-IOmAde
T.=25'C
10 20 50
II
100 200 500 1000
o
FREQUENCY (I MHz)
13
j '" ~ !§
~
I
1.0
/
V
~ f V,,= -2Vde /
,
In
oil 11
j r\ ..1 0.9
g V
i3i
.J 9 I . ).
f= lOOMB,- I - - - 0.8 /
T.=~5'C
7 0.7
o 10 12 14 16 -75 -50 -25 .25 50 75 100
Ie. COLLECTOR CURRENT (mAde) T•• AMBIENT TEMPERATURE ('C)
2-168
2N 1162 thru 2N 1167
(GERMANIUM)
2N1162A thru 2Nl167A
2N1162,A 2N1163, A
2N1164, A 2N1165, A
2N1166, A 2N1167, A
MAXIMUM RATINGS
2-169
2N 1162 thru 2N 1167 (continued)
..
(V CB = 30 V, IE = 0, TC = 90°C) 2N1164A-7A' 10
2-170
2Nl162 thru 2Nl167 (continued)
"
The active region safe operating Sms'"
area curves indicate Ic·VeE limits 10
to be observed in order to avoid
secondary breakdown. (Secondary
breakdown is independent of tem-
~ S,O Ims
perature and duty cycle.) These "" 3,0 "-....... \
curves do not define operation in
the avalanche region. To insure
operation below the maximum
I 2,0
dc f".. r-...
"\.y
'\
junction temperature, power de-
rating must be observed for both
~
::j
1.0
30 30
2S01-'~_ 20 2S0l-'S -
20
~ORLESS
s~r ~ ~"< ~ ~
~~
..... OR LESS
10
\ 10
Sms
~ S.O
, i
Ims Ims
S,O
"" "- /' ..., \ ~
SO~I-'S
~B 3,0
2,0
500 p.S ~\
I 3,0
2,0 I"'" """' ~~\
A ~
"'"
dC,../"
~ 1.0
~
dC
1.0
~ S
8 O,S
.!l 0,4 ~ 0.5
04
.......... _\.
-
Q.3 '\
0.3
\
-
TO 80 V, 20 rnA TO 90 V, 20 mA
0,2 0,2 WITH BACK BIAS APPLIED
~~~s~~~~i~O:~\IED-
40
~70 0.1 0 10 20
IPULSE CURVES O~LYI
30 40 SO 60 70
r-r-
~ 90
80
10 20 30 so 60
VeE, COLLECTOR·EMITTER VOLTAGE IVOLTSi VeE, COLLECTOR·EMITTER VOLTAGE !VOLTSI
200
TJ ~ lOO'C /V /
/ I II /
/ / V / TJ ~ -SS'C
TJ~ 100'C / / TJ ~ -sS'C
TJ 2S'C
if / / 0
'"/
1.1
0 I
II / TJ ~ 2S'C
/ / /
I.0 / 0
II
J 1/
I
S
0,S II
I I I
0,3 II I 0,4 2 II
o 0,2 0.6 0,8 1.0 0,2 0,4 0.6 0,8 1.0
VIE, BASE·EMITTER VOLTAGE lVOLTSI V.., BASE·EMITTER VOLTAGE lVOLTSI
2-171
2N 1162 thru 2N 1167 (continued)
TJUt 25
v:V
~
----
I--"
....... .. 0.8
I~V V
100
TJ 25'C
0.6
... /
~ ~V .....
V
- r- TJ--55'C V
~
/
- 0.4
~
/
, ~t-- V
30 ~ / I, - 0.2 AMP
1\ If V V ~-
~/
20
It
Y
10
0.3 0.5 1.0 2.0 3.0 5.0 10 20
\
1.0
Ie, COLLECTOR CURRENT lAMP) VOE, COLLECTOR.fM1TTER VOLTAGE (VOLTS)
2-172
2N1175
FOR SPECIFICATIONS, SEE 2N1413-2N1415 DATA.
CASE 31 (1)
(TO-5)
MAXIMUM RATINGS
2-173
2N 1185 thru 2N 1188 (continued)
Noise Figure NF dB
(VCE = 4.5 V, IE = 0.5 rnA, - 5.0 15
Rg = 1 K, f = 1 kHz, <1f = 1 Hz)
2-174
2N 1185 thru 2N 1188 (continued)
"""-,
u _ 180 9JC = 0.25°C/mW(max)
°
'"
N
200 VeE = 1 VOLT 3~ ~
160
!;;:
/ IE = 50 MA
~
V ~ 140 I""""'"
~ 100 ~
,
.c
80 - 12
I'\..
...~
15
60
40
:
ilic;
10
oI---
801---
9J. = 0.3750C/mW(max)-J ......
<> I- VeE = 6 VOLTS ......... I'\..
"" "" 60
~
20
1,=1 MA
~ 40 1'0..' ~
I oI .;
... 20 "
o
-80 -60 -40 --20 20 40 60
TJ • JUNCTION TEMPERATURE (OC)
80 100 120
0
0 10 20 30 40
TEMPERATURE (OC)
50 60 70 80 90 '"
100
OUTPUT CURRENT versus BASE DRIVE VOLTAGE DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
180
o 160 "-
~
~ 140 l'.. VeE = 1 VOLT
""~ 120
2N1l88 ,-!N1l85
z
~ 100
...... 1'-0.,
~
1' ....
--r-r--
-....-
....
- -,..-. ""'" - r- -
!i: 80
~ 2N1l87
g; 60
<.> ...
g
j
40
20
o
2N1l86
'- '- -. == 1-. ~-
2-175
2Nl189 2Nl190(GERMANIUM)
MAXIMUM RATINGS
·Limited by pawerdissipation.
Noise Figure NF dB
~
200
;: 180
.... I"\, 8,c = 0.25°C!mW(max)
.......
...~
.
200
100
/
Vc"
IE
= 1 VOLT
= 50 MA ,...,.V :::
~
z
0
160
140
........ ",
......
I"\.
.=
~
80 120
" """
~
...
0
z
60
~
c;
100 80. = 0.375°C!mW(max)..J
40 80 ........
ti - Vo" = 6 VOLTS '"~
'"
It I" =1 MA 60
I"...
20 0 40
"- ~
a
-80 -60 -AO -20
I Ia 20 40 60 80 100 120
0..
" 20
10 20 30 40 50 60 70 80 90 '"100
T,. JUNCTION TEMPERATURE (OC) TEMPERATURE (0C)
OUTPUT CURRENT versus BASE DRIVE VOLTAGE DC CURRENT TRANSFER RATIO versus COLLECTOR CURRENT
~ 250 140
0
VeE; 1 V
~ ~ 120
..
::i
200
2L90j '/2~1189
.
'"
100
.....
' ..... VeE = 1V
~
...
~
150
*... "
z:
..:
80 ~
...........
r.......
----
'"
::>
II ~
is
..........
........... ~O
---
<.) 100 60
_2N1189
'"'"::>
~/
'"
~ <.) 40
~
o
50
<.)
0
~ Y'
<.) 0 20
it
~
o o
o 0.2 0.4 0.6 0.8 o 20 40 60 80 100 120 140 160 180 200
2-177
2N 1191 thru 2N 1194 (GERMANIUM)
MAXIMUM RATINGS
Noise Figure NF
(V CE = 4.5 V, IE = 0.5 rnA, - 10 - dB
2-178
2Nl191 thru 2Nl194 (continued)
ELECTRICAL CHARACTERISTICS (continued)
Characteristic Symbol Min Typ Mu Unit
Small Signal Current Gain hfe
(VCE = 6 V, IE = 1.0 rnA, 2N1l91 30 40 70 -
2N1l92 50 75 125
f = 1 kHz) 2N1l93 100 160 250
2N1l94 190 280 500
160
\
. 140
~, Veo = 1 VOLT
S r,
~
~
~
120
100
"'~1193 -, <2N1194
--
80
I'-.
........ ...
~
"co
" 60
-I-
-..-
l/N1192
-
..........
- .......... "
~
.- .- -- - --- "--
j ........ 1'- ..... ....
40
2N1191/ ro-
20
o
0.2 0.4 0.6 0.8 o 20 40 60 80 100 120 140 160 180 200
V." BASE -EMInER VOLTAGE (VOLTS) Ie, COLLECTOR CURRENT (M ILLIAMPERES)
SMALL SIGNAL CURRENT GAIN
versus TEMPERATURE POWER-TEMPERATURE DERATING CURVE
(For All Types) (For All Types)
600 220
400
200
Y
200
~
180
160
" '\ \
(he;;:;: O.25°C/mW (max)
=
~
VrF: 1 VOLT
I E =50MA
V I'\. [\
°"
~
/ /
.~
~
140
--
N
~ 100
"... z
120 8110 =0. 75°C/mW (rna,) ~ \
~
~
80
~ 100 1\
~ 60 i5
80
'\ \
~ '" V" _ 6 VOLTS
= ~
40 IF, 1 MA
~
60 I'\. \
1\.\
,
Q
0..
20 40
20
'\~
o o
-80 -60 -40 -20 20 40 60 80 100 120 o w ~ ~ ~ ~ ~ ro ~ ~ ~
T" JUNCTION TEMPERATURE (OC) TEMPERATURE (OC)
2-179
2N 1204, A(GERMANIUM)
2N1494,A
2N1495 PNP germanium epitaxial mesa transistors for high-
2N 1496 speed, high-current switching in line and core driver
applications.
2N2096
2N2097
CA5E~
2N2099
2N2100
(TO.5~1 ~ CASE 25
2N1204.A 2N1494.A
2N1495 Collector 2N1496
2N2099 connected
2N2096
2N2100 2N2097
to case
MAXIMUM RATINGS
2-180
2N 1204,A SERIES (continued)
--
2N20S7, 2N2l0D - 20
2N1204, 2N12a4A. 2N1494. 2N1494A, 2N2a96, 2N2a99 - 35
2-181
2N1204,A SERIES (continued)
FIIIURE 1- 1YPICAL RISE AND FALL nME BEHAVIOR FIGURE 2- STORAGE nME VARlAnoIIS
30
Vee- IOV 1,,-1..
TJ - 2SOC
fJ.-IO " 1c~lIo« I..
j 20
1\ '" ......... ~
~
I 1\ t.andt,
V/
/ 10 20
I". BASE ClRIRENT!mAde)
50
\
I\.
"- ....... V
~
" !
I ..."..,
...".. ~
~
10
10 20 30 50 70 100 200 300 500
ioJ I ..............
.,..,... ......
......... i"""
10
Ie. COLLECTOR CURRENT (rnA) 1,,1 ... CIRCUIT ORIVE RATIO
FIGURE 3- TOTAL CONTROL CHARGE FIGURE 4 - CARRIER STORAGE TIME CONSTANT TEST CIRCUIT
3000 VOUT
I I + Vu
!
TO SCOPE
I - tJ=12So~
- lell,=IO " I, = I, = 20 mA
/
/ 1.5 K
IN277 135
l.I
10
,. , /
,/
I'
I -
O'S"F
JL
--I I-- 10,.s
40
FIGURE 5 - RISE TIME TEST CIRCUIT FIGURE &- STORAGE AND FALL TIME TEST CIRCUIT
HI RELAY Ha RElAY V."
500
TEKTRONIX TYPE 517 250
-n
CRO OR EQUIVALENT
250
50 50
10V -SV -IOV
2-182
2N 1204,A SERIES (continued)
TJ =: 25°C
I- ,:
-=10
I I
I
i1! 0.8 I- '.
g TJ = 25°C
.,J
...
<> r'-.
~ 0.6
~ ...... ~ 1/
g \ \ Ie = 500mA
/
III 0.4
:::l
8 \ I'.. le-~oom~l+ /
J 0.2
o "- -
"-
Ie 10mA
I I II
Ie
-II
SOmAl
I~ = I~OmA
I I
0.3
P"" ~""'
0.1 0.3 0.5 0.7 1.0 3.0 5.0 7.0 10 30 50 10 30 50 70 100 300 500
I•• BASE CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
/
Va =,-20V
K ~
1
10 ~.
I-
z
:Il +55O C
co:
=> 7.0 - V ,
TJ ...........
... 5.0
<>
.............. ~
T --
'THiiESHOLO 1
,
.... Lub,1 Current. I" is defined as
~
""'~ ....
f- VOLTAGE base leakage eurrenl wilh bolh junelions
~ reverse biased. Ie is .'ways less Ihan I.. C••
~ 3.0 for V01>V,. (VOl is off condition base
c
CD
TJ +25°C
~r---......
1.0 J L 2
-0.25 0 0.5 1.0 1.5 2.0 0.4 0.5 0.7 1.0 3.0 5.0 7.0 10 20
Vo•• BASE-EMITTER REVERSE BIAS (VOLTS) REVERSE BIAS (VOLTS)
2-183
2N 1358, A(GERMANIUM}
2N 1359 (GERMANIUM)
2N1360
2N 1362 thru 2N 1365
2-184
2N 1408 (GERMANIUM)
MAXIMUM RATINGS
2-185
2N 1412 (GERMANIUM)
2N1412A
~
" -)
PNP germanium power transistors for high-voltage
power amplifier and switching applications in military
CASE 5 II ,. I
and industrial equipment.
(TO-36)
MAXIMUM RATINGS
10
'\ \. ~~~~ _I~O~'[ V
OR LESS- - !.
120
~ 100
\ ~ ""~ ~ :iii 80
"- 7" ~
. "-
/ '""'- ..... flt: , iii
Ia
60
"- ~
"
40
~
HO·WATT /
... 20
"
I POWER DISSIPATION AT
5 25'C CASE TEMrERAiURE
d~/
i\ 0
o 20 40 60 80 100
I
T~ 1001v. 8 mA
(2NlIOO ONLy)
Te. CASE TEMPERATURE (OC)
The maximum continuous This curve bas a value of
(iWITH BACK BIAS APPtli--
ULSE tURVr ONjY) ~. :.,:rjJ~c~f~~t~~n:~;::ri; lJr~~1~~.~ =i~e.r~~~;
by the thermal resistance at 100·C with a linear rela-
O. I factor. tion between the two tern·
o 10 20 30 40 50 60 70 80 90 100 peratures such that:
COLLECTOR·EMITTERYOLTAGE (VOLTS) allowable PD = WO° - To
0.5
The Safe Operating Area Curves indicate l e - (Duty cycle of the excursions make no significant
V CE limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2-186
2N 1412 (continued)
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Minimum Maximum . Unit
Emitter Cutoff Current lEBO - 200 /lAde
VEB " -2.0 Vdc
IC = 0
Emitter Cutoff Current lEBO - 10 mAdc
VEB = -60 Vdc
IC = 0
Collector Cutoff Current ICBO - 200 /lAdc
VCB = -2.0 Vdc
IE = 0
Collector Cutoff Current ICBO - 10 mAdc
VCB = -lOO'Vdc
IE = 0
Emitter-Base Voltage VEB 0.5 Vdc
VCE = -2.0 Vdc
IC = -1.2 Adc
Emitter-Base Voltage VEB 0.9 Vdc
VCE = -2.0 Vdc
Ie = -5.0 Adc
Floating Potential Vfl 1.0 Vdc
VCB = -100 Vdc
IE = 0
(Voltmeter input resistance
= 10 Megohm min)
Collector-Emitter Saturation Voltage VCE(SAT) 0.7 Vdc
IC = -12 Adc
IB = -2.0 Ade
Forward Current Transfer Ratio * hFE 10 - -
'Test by sweep method with a short duty cycle (about 1 %) to avoid excessive heating.
2-187
2N1412 (continued)
0.6 12
/ / ~
V
0.5 10 I / /'"
I _400C"")
'/ L"- OOC
JI ~ // /'
...ffi
Ci)
0.4 ~ S
C>.
I J :;;
5 Jj 0- - 25°C
::E
5
rl .......z ~
.......
z 0.3 IIJ ""g; 6
""
...""
=> SooC IIJ <.>
"" I'
~::l
<.>
en
« I V rt ~
CD
~
0.2 25°
r 1O
~~
o
<.>
4
1/
/ A1
.,
0.1 2
4°iC-
~~
0.2
1""""" i"""~
0.4
"
0.6 O.S 1.0
o
o
III
12 15
~
900
800
J
_700
J ~
10
I~
12
~
rsbo
I - ~_550
500
iil
..."" S SooC
j VI ~ ~_45Q
~OO
"j If
--
C>.
::E 350
5
.... 25°C ~
3 0
is
""=>"" 6
'/ ~-
250
<.>
""u0
....
ILVJ ~
2rO
1501
...::::l 4 / 1/V
1'--' 40 oC - ,/
.ioo
/ / /
0
u 50
~ -'
/ / / 3 I. _ 10 m!, I. _ 0
VES
\
=0
2
~, V
,/
, - ~~tb~
o .J U~
o 0.2 0.4 0.6 O.S 1.0 00 10 20 30 40 50 60 70 SO 90 100
2-188
2N 1413 thru 2N 1415 (GERMANIUM)
2Nl175
MAXIMUM RATINGS
Collector-Emitter Voltage
IC; 0.6 mAde, RBE = 10 K
BVCER 25 - Vdc
2-189
2N1413 thru 2N1415, 2Nl175 (continued)
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted)
2N1420
For Specifications, See 2N718 Data,
2-190
2N 1529 thru 2N 1538
(GERMANIUM)
2N 1529A thru 2N 1532A, 2N 1534A thru 2N 1537A
MAXIMUM RATINGS
10 Amp
Collector Current Ie
(Peak)
2-191
2N 1529 thru 2N 1538 (continued)
=
ELECTRICAL CHARACTERISTICS (Tc 2S'Cunless otherwise specified.>
Characteristics apply to corresponding "A" type numbers also.
---
(IC " 500 mA, V EB " 0) 2N1529, 2N1534 30
2N1530. 2N1535 45
2N1531, 2N1536 60
2N1532.2N1537 75 -
2N1533. 2N1538 90 -
Collector-Emitter Leakage Current ICEX rnA
(V BE " -lY, VCE @ rated BV CBO ) - 20
Transcondu.ctance mhos
gFE
(V CE = 2V, Ie "3A) 2N1529 - 2N1533 1.2 -
2N1534 - 2N1538 1.5 -
2-192
2N 1529 thru 2N 1538 (continued)
!~IFJ--+---+-
110~===F~;:~==~====~==~~ ture, by the thermal resistance fac-
l-i~~sg!J
-
tor. For dc or frequencies below
25Hz the transistor must be operated
within the constant Pn = Vc x Ic
hyperbolic curve. This curve has a
value of 106 Watts at case tempera-
~ 0 20 40 60 80 lao 110 tures of 25°C and is 0 Watts at 110°C
Te. CASE TEMPERATURE (OC)
with a linear relation between the two
temperatures such that
P n allowable = 110° - Tc
0,8
COLLECTOR CURRENT versus BASE CURRENT COLLECTOR CURRENT versus EMITTER BASE VOLTAGE
VeE = 2V
/ v
/ V
2N1534 - 2N1538
J /
#
I'
2N1529 - 2N1533
..
Zo = SOil lSG
-----1 r--- ~GI = 2V
20V
I
I
LJ
PULSE GENERATOR
I
I 125
;\
'" '"
TYPICAL SWITCHING CHARACTERISTICS
..........
I'-.. t---. 2N1534 - 2N1538
2N1521-33
2N153W8
3
3
Ie V
3
R
65
100
t..+t.
(AMP) IVOLTS) (ohms). II'S}
3 10
8
t.
i/tS)
3
t,
("S)
5
25
'""r- r- r--
2Nl529 -lN1533
-r--r----
o0 1.0 2.0 3.0 4.0 5.0
Ie. COLLECTOR C~RRENT lAMP}
2-193
2N 1529 thru 2N 1538 (continued)
The Safe Operating Area Curves indicate I c - (Duty cycle of the excursions make no significant
V CE limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
=t~m'
1 m,
H
r- r- -Sms
l - I-- -1m, I"<- H.
5m,
1m,
1\
-c~ 500 "' l - I-- -500", 1500 ",
"t--
~~ ~ I--
\ \
\
f-- I- \r"' ~ 100 pS
>---
\
t\ 11 \
~250 /lS
I\. \
\
~
~
z
\ \ \\ 1\ i\\
\ ['\ \~
~
~
~
u
~
~
OC\ DC\ DC
r"\ \1
~ 0.7
,,,-
!
.fj
0.5
0.4
\
r-....
0.3
['\ "'-
0.1
~
TO 45V,3mA T060V,3mA TO 75 V, 3 rnA
0.1
o
WITH APPLIED
BACK BIAS
(FOR PULSE CURVES ONLY)
5 10 15 10 15 30 350 5 10 15 10
WITH APPLIED
BACK BIAS
(fOR PULSE CURVES ONLY)
15 30 35 40
\
45 50 0 5 10 15 10 25 30 35 40
WITH APPLIED
BACK BIAS
(fOR PULSE CURVES ONLY)
45 50 55 60
\65
V", COLlECTOR.£MITIER VOLTAGE (VOLTS)
2N1532,2N1537* 2N1533,2N1538
10
5ms .....
) 500 "'
1m,
5m,
1m, ~ " I\, 1\
~2501's
500 I~S
\ --::::; 250 1'5
1\ 1\ ~\\ r-.... [\ \ l\ \
\ .~~ ~~
t(:
['\
"
~
'\ "'-
!
~
'\
DS"-
r"-
\
~
}
i' ~~
~~
~
8
;;;i
0.7 ......
...... ", " ......
~ 0.5 ........
.fj 0.4
0.3
0.1
" '" I' .....
~ ~
TO 90 V, 3 rnA TO 110 V, 3 rnA
WITH APPLIED WITH APPLIED
BACK BIAS BACK BIAS
(fOR PULSE CURVES ONLY) (FOR PULSE CURVES ONLY)
0.1
o 10 10 30 40 50 60 70 800 10 10 30 40 50 60 70 80 90 100
V", COllECTOR·EMITIER VOLTAGE (VOLTS)
2-194
2N 1539 thru 2N 1548
(GERMANIUM)
2N1539A thru 2N1542A, 2N1544A thru 2N1547A
PNP germanium power transistors for switching and
amplifier applications in high-reliability equipment.
THERMAL CHARACTERISTICS
2-195
2N 1539 thru 2N 1548 (continued)
ON CHARACTERISTICS
DC Current Gain hFEl -
(IC ; 3.0 Adc, V CE ; 2.0 Vdc) 2N1539-2N1543 50 100
2N1544-2Nl548 75 150
DYNAMIC CHARACTERISTICS
Common-Emitter Cutoff Frequency
(IC ; 3.0 Adc, VCE ; 2.0 Vdc)
2-196
2N 1539 thru 2N 1548 (continued)
SWITCHINO TIM. M.ASURINO UNIT
TRANSISTOR
11,1_ Can~ltlo.l" SWII::r~:·:I".1
Zo • ~on
I.n.
Ie V 1,,+1. I,
~)
R
~.------! r------ (Amp) (Volts) (ohml) ~) ~)
165 5 3 5
20Vl... .J 2N153,",3 3 3
2N1544-48 3 3 250 5 3 8
PULSE GENERATOR
"Input Pulse Repetition Rate = 2 kHz,
Pulse Width = 50 P.s
COLLECTOR CURRENT versus EMITTER BASE VOLTAGE COLLECTOR CURRENT versus BASE CURRENT
I I
I
I
VCI = - 2 V V",=-2 V
I
/ c:
~ 4
2NI544·2NI548
--, V V 7
Vl/. Vr--..
.... If
~ V il!
..,'"
::::I
J ~ V
:!S
....
2NI544-2N1548
I ~..,
2NI539·2NI543
~
V
J. V .2
0.1
~
0.2
~ A.. ,
0.3 0.4
2N1539 .2N1542
0.5 0.6
o
II
o 10 20 30 40 50 60 70 80 90
1\
'"
temperature and duty cycle of the excur-
sions make no significant change in these 1
safe areas.) To insure operation below the ~~~~~Sir~~~:TURE
maximum TJ. the power-temperature de-
rating curve must be observed for both
0.'
D.• "
steady state and pulse power conditions. 03
.. D.'
0.1
.0
- f-
10
TO 45V.3 mA
WITH BACK BIASAPP~If--
(PULSjCURVES1DNlYI
15 20
COlLECTOR.fMlnER VOLTAGE (VOL TSI
2S
,_
r
30 35
0
"~,,,.J.,
II.
\". 1 I~' 50011'1 lOO~
ORlfSS
+t"'~EJ ,,,. Im~ ~,; ".~"'! ,Im\ 1~5
51" ,J.,;~" ::r 1m,1 1 1
v1"'''i
250 ...s
:o~~
250- 250"
OR LESS OR lESS
•• "
if ,
~ \ I:' ~~\
I~ ,1..1 /VI"r\.
2
1
\ "i}T'~
9O-WAn
r-- 1\ ~ "T"y~
9(J..WAn
'TrvKr-..r-..~
9O-WATT
PQWEROISSIPA11~ POWER DISSIPATION POWERDISSIPATlnN POWER DISSIPATION
~ 25"CCASETEMPIRATURE 25"C CASE TEMPERATURE 25°C CASE TEMPERAtURf 2s o CCASETEMPERATURt:
8
.... d•
d•
• I"
02 1--+-+---1- TJ
WIT1iBACKBIASAPp~I~-rr
6OV,lrlA
i
I-+-H+-+ TO'TI",5!.:..
w 3}.',,, APPL'EO
......... l'~ --1\ 1--I--+-j-T090V.3mA
.1
1,!,'TiONT r-~\ (PU1"'i"j"i"i I'~\
wnH.BACKBIASAPP,~~
(PUiSECUjVESjlYJ I
o 5 10 l!i 20 25 3D 354045 500 5101520 n 30354045 so 55 60 650 10 20 30 40 50 60 10 SOo 1020 :JO 40 50 60 70 10 90 100
COLlECTOlI-[MlnER VOLTAGE (VOLTS) COUECTOR.£MmER YOLUGE (VOlTS) COllECTOR-EMmER VOlTAGE {VOlTS] COWCTOff.lMmER VOLTAGE {VOlTS)
2-197
2N 1539 thru 2N 1548 (continued)
BASE CURRENT versus EMITTER BASE VOLTAGE DC CURRENT GAIN versus COLLECTOR CURRENT
10 0 240
I I I I
0 YCE =- 2 Y Ye .=- 2Y
200
o. I I
. .. I I
! 70
2N1539-2N1543 \ - z 160
.....
IE
III
:::>
60
I 17II
~
5 .......
, / 2N1544-2Nl548
...
!
50
II
II 120
...
:::> -...r- ~
~ 40 2N1544-2N1548 .........
0 1'-..... ~ I 80 '-
~
20 / / 40 ~
2N1539-2N1543 I/
//
10
o
o 0.1 0.2
./". " ,
0.3 0.4 0.5 0.6
o
o
rI I 4
V'" EMITIER-BASE VOLTAGE (VOLTS) Ie. COLLECTOR CURRENT (AMP)
2-198
2N 1549 thru 2N 1560 (continued)
2-199
2N 1549 thru 2N 1560 (continued)
COLLECTOR CURRENT versus BASE CURRENT COLLECTOR CURRENT versus EMInER-BASE VOLTAGE
1· 14
12
J
Willi
~I
2N1557·2N1560
."...., ..-
12
2N1553-2N1556 ...
I- ~
'/
V
~
,. 10 /
V
I I
2N1553·2N1556 V
,.~ 10 I /
~
....
is i
If
Y V-
...
~
l!l
2N1557-2N15S0 /
/ /
1Ii V"
'"'"::><.>
'"e 6
2N1549-2N1552,
'"
::>
<.>
e'" 6
V/ J
'IV V
I
~ ,= -2V ~ vc,= -2V
0
<.>
~
4 /
Vc
0
<.>
,g 4
/ 1/ 2N1549-2N1552
J V It'
o o
JII ~~
o 0.2 0.4 0.6 O.B 1.0 o 0.2 0.4 O.S O.B 1.0
CURRENT GAIN versus COLLECTOR CURRENT BASE CURRENT versus EMInER-BASE VOLTAGE
140 1.0 r--..,--,-..,--,-..,--,--r--r-'-,----,
120
.... vc ,= - 2V
O.B t--t--+--t--+--t--+--t--+-I-+---l
K.,NI557.2NI5S0
100
z:
I'k ,.~
;;:
co
.... BO N ~ O.S t--+-+--+-+--+-+--+--t+--+----i
z
to- ~
r--... r-.. ~
~ ~53r?5SI
::>
::>
"' ..... r--- <.>
....
--
<.> 60
1 I"N... ~ 0.4 t--t--+--t--+--t--t-:-t-++-;---l
I I I I I l""'- I'-
40 - ' ...... ;:::: 2N1549-2N1552
'"
-
0.21--+---+
20 .......
r-
o
o 4 10 12 14 IS 0.2 0.4 O.S 0.8 1.0
2-200
2N 1549 thru 2N 1560 (continued)
The Safe Operating Area Curves indicate Ic- (Duty cycle of the excursions make no significant
V CEl limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2N1549, 2N1553, 2N1557 2N1550, 2N1554, 2N1558 2N1551, 2N1555, 2N1559 2N1552, 2N1556, 2N1560
, ... ,m,
/lcMAXPEAM 5ms 'm. 1 Ie MAX PEAK ShlS 'm. /500,111 IcMA)(PEAK 'm. 500,lls1 /leMAKPEAK/Sms 50°111
5 IcMAXCONT.
}'o. ~
'ciAXCjNT "-./ I>- "-
I"\. .......
/ I" 1\ I-\' IcMAXCONT.
t"-- l\
"""'CO'),7
\.
\
,
9O·WATT
POWER DISSIPATION
25°CCASETEMPEIlATUAE ~~ ,.U //1" i'- f'\
POWER DISSIPATION
tL11
POWERDISSIPAT10N
i'-i'- ~ ~JTT ~
POWER DISSIPATION
,........
t'"'
25°C CASE TEMPERATUAE 25°C CASE TEMPERATURE 25°CCASETEMP[RATURf
d,
• d,
d,
'.4
3 "
2 r - t-- T045V.3mA l ,,-
- T~"V.3.J -r- T075V,3mA
I-WITHBACKBI"APP\'~ ~~T~:AlK~ASAPPlItD
WJTHBACKBIASAPPL~ WITHBACKBIASAP~~~
rsYui . . ~I' -
" 10
IPULSjCURViLYl
15 20 25
COWCTOR.£MmEIt VOLTAGE MILTS}
30 350 5 10 Hi
tiUlS'I'Uj'"\"
20 25 30 .
3
COUECTOR.fMITTER VOLTAGE (VOl.TSl
"
f\.
45 50'
iPU'i"l'j 'l~
51015202530354045505560650
COLLECTOR.fMITTERVOLTAGEIVOlTS)
10 20 30 .. . . 50
COllECTOR.fMmER VOlTAGE MILTS}
70
~
hyperbolic curve. This curve has a ~ 40
"-..
value of 106 watts at case tempera-
100 110
i'.....
=1100 - Tc
0.8
TRANSISTOR
O.. lces C••dlll ••• •
. SWII::r~:~lm.s
Ie V R t..+1 I,
Zo = 50n In (Amp) (V.lts) (ohms) (,.s) (ps) ~;s)
2N1549 ·52 10 10 10 5 2 10
<RIO •• ·5. lu 10 30 10 5 25
2ovL... J
PULSE GENERATOR
. 2"1557 -60 10 10
Input Pulse Repetotton Rate _ 2 kHz,
Pulse Width = 50 "s
50 10 5 25
2-201
2N 1561 (GERMANIUM)
2N1562
2N1692
2N1693
CASE 23 CASE 24
(TO·l07) (TO·l02)
2N1561 2N1692
2N1562 2N1693
Collector connected to case;
stud isolated from case
MAXIMUM RATINGS
r:::: ~
12NI561 -
Po = 550mW J2NI692
= ··-15VOC
g 10
VCE
T" = 25°C
~z 8 \\ 2NI561
~
2NI562 --"""\
2NI693
l\ 2NI692
~ 6
~ I~
4
2 ~
0
50 70 100 150 200
"\ 300 400
O~~~~~~~~~~
o 10 15 20 25
fREQUENCY (MH,) Veo • COLLECTOR·BASE VOLTAGE (VOLTS)
2-202
2N 1561, 2N 1562, 2N 1692, 2N 1693 (continued)
Cha racteristic
OFF CHARACTERISTICS
DYNAMIC CHARACTERISTICS
2-203
2N 1561, 2N 1562, 2N 1692, 2N 1693 (continued)
POWER OUT, COLLECTOR CURRENT AND COLLECTOR EFFICIENCY versus CoLLECToR·EMITTER VOLTAGE
2NlS61/2N1692 2NlS6212N1693
1.0 100 1.0 100
~ 0.8 ~
u
oS
80
I
E....
in 0.8
~
Iso
....
II
... .... - - -1- -- 1--- ~
.
-
z 3:: is En
~ ,..... ;:: 0.6 ~
0.6
~ 60 gj60
r ;;;::
~;:.--
."., :::>
~
:::> :::>
0 :::>
<.>
V
0
'"
<J
Ie
;;;
'"
.
~ 0.4 '"
0
.... 40
V 4
..
~ 0.4
0
'"~ 40
~
~
0
~ ~
.: 0.2
5<.> / P" = 12SmW_ 0
S 20 PI' = 12SmW_
20
f= 1601 MHz 0.2
V ,= 160MHz
..f>
10
T.= 25°C
15
L......t 10
I 15
T. = 25°C
'"
40 ...... -.::,..; k
5
0 <.>
, .... ....
0
V
'"~
!C
.: 0.2
0.4 '"0
....
~
5<J
20
'./
... V("
2
~
0
.,
<J
.
0
'\ 0.4
0.2
~
<.>
20
E '.' __
1.0 u
10 0
80
I--
-wI~.1 100 1.0 "
100
80 100
~
t-- t-. P, in
i f-I i'--'
!~ 0.8 .... ~ ~ e
oS
60 80 >-
i 0.8 .... 60 r- 80 ~
~:::> -- -- ~ -- ~ i' ~
I--Pr.-
"
<J <J
50 is 50 I-.. is
c:;
'"~
.
0.6 <J
'"0
....
40
"',
60
~ '"~
..
0.6 ~ 40
~
-- -~ ~
~.
\
60 <3
~
'"0
t '"~
0 <J
0
0.4 0 40 0.4 0 40
~ v, .• = -15Vdc ~ = -15Vdc
I-
.: I' ~
V"F.
~ ~
0.2
<J
.2 tP"T. == 125mW
25°C
20 0
<J
.
0.2 <J
Pox = 125mW
T. = 25°C
20 0
..
<J
a' 40
I
60 80 lOa 160 200 300 400
a o I
40
I
60 80 100 160 200 300 400
FREQUENCY (MHz) FREQUENCY (MHz)
2-204
2N 1595 thru 2N 1599 (SILICON)
31(~
Industrial-type, low-current silicon controlled recti-
fiers in a three-lead package ideal for printed-circuit
applications. Current handling capability of 1. 6 am-
peres at junction temperatures to 125°C.
CASE
(T0-5) 'J \ \
MAXIMUM RATINGS (T J = 125°C unless otherwise noted)
-----
50 MAXIMUM ALLOWABLE GATE POWER ",
3.0 VOLTS PGM" 100 mW 5.0
::t
.§
f-
~
20
lO
5.0
~~~tl~~~~gE ~
"'·"~~'"t-
ffi '- AS A TRIGGER CIRCUIT DESIGN CRITERIA
~
'"'"=>
u
2.0
1.0
~ TYPICAL /~
-, ~'MAXIMUM
'"f-
0.2
~;:i:
z<t:
=> ~
(TJ = 12S'"C - 5 mA)
(TJ:;:::; -65°C - 15 mAl
•
~
=>
~
0.1
if NOTE: VOLTAGE DROP MEASURED
'I:z INCH FROM BOTTOM OF CASE
0.1 z
'"'".::
0
Z MAXIMUM ALLOWABLE FORWARD O.O~
!!? .02
.05
TYPICAL TRIGGER POINT
GATE VOLTAGE 10 VOLTS '"
f-
z T, 125O C -
'"
In 0.02
I
j TJ =25°C -
.001
'"
1::' 0.01 1
3 4 5 6 7 10 o 1.0 2.0 3.0 4.0 5.0
VGT. GATE VOLTAGE (VOLTS) VT.INSTANTANEOUS FORWARD ON VOLTAGE (VOLTS)
(T, = 25°C. ANODE @ 12 VOLTS)
2-205
2N1595 thru 2N 1599 (continued)
*VORM for all types can be applied on a continuous de basis without incurring damage.
CURRENT DERATING
CASE TEMPERATURE AMBIENT TEMPERATURE
G
...
~110~--~~~~~---+--~----~--~--~
'"
:::>
~...
...~ 90t--1--
5 80
,.E
DC
2N 1613 (SILICON)
For SpeCifications, See 2N718A Data.
2-206
2N 1651 thru 2N 1653 (Germanium)
2N2285 thru 2N2287 (Germanium)
MAXIMUM RATINGS
2N1651 2N1652 2N1653
Rating Symbol 2N2285 2N2286 2N2287 Unit
Collector-Emitter Voltage VCEO 30 60 80 Vdc,
--
VCS
Emitter-Sase Voltage VES 1.5
- Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case IiJC 0.8 °C/W
IB(off) --+-
O.25mH
'R3 ""-::>,--JIoIII'v--<l...rY'Y'Y'---,
R1 = 1.0 Ohm, 20 Watts R5' IC Adi"st@VCE=VZ .0----.-''---'''''''+-1.
RZ =1.5 Ohms, 2.0 Watts
A3 = 0.1 Ohm, 1.0% 81: Adjust for IB(on)= ¥& IB(on)
R4 'S 0.04 Ohm 82 = 1.5 Vdc, Adjust for I B(off) "" 0.2 Adc
B3 = 12 Vdc 50W
2-207
2N1651 thru 2N1653/2N2285 thru 2N2287 (continued)
ELECTRICAL CHARACTERISTICS (Tc =2S"C unless otherwise noted)
I Characteristic Symbol Min Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CEO Vdc
(IC = 100 mAdc, IB = 0) 2N1651, 2N2285 30 -
2N1652, 2N2286 60 -
2N1653, 2N2287 80 -
Collector-Emitter Sustaimng Voltage (See Figure 1) Vdc
VCE(sus)
(IC = 25 Adc) 2N1651, 2N2285 40 -
2N1652, 2N2286 45 -
2N1653, 2N2287 50 -
Collector Cutoff Current ICB01 /lAdc
(V CB =2.0Vdc, IE =0) - 200
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 10 A4c, V CE = 2.0 Vdc) 35 140
(IC = 25 Adc, VCE = 1. 5 Vdc) 20 -
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 25 Adc, IB = 2.5 Adc) - 0.30
SMALL·SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(IC = 0.5 Adc, V CE = 6.0 Vdc, f = 30 kHz)
SWITCHING CHARACTERISTICS
Rise Time tr - 12 /ls
1.1
SCOPE D-_---'VV'Ir---,
PULSE
GENERATDRO-_ _ _ _ _ _~_ _ _ _ _ _ _~_~~_ _ _~---_ _J
2-208
2N 1692, 2N 1693
For Specifications, See 2N1561 Data.
CASE 31(1)
(TO-S)
MAXIMUM RATINGS
2-209
2N1705 thru 2N1707 (continued)
(V CB = -25 Vdc)
2N1706
2N1707
--- ---
--- ---
10
15
(V EB = -10 Vdc)
2N1706
2N1707
--- ---
--- ---
20
10
DC Current Gain
(I C = 10 mAde, VCE = -5 V) 2NI707
hFE
40 90 150
---
(IC = 20 mAde, VCE = -I V) 2N1706 60 --- 120
\
CASE 26
(TO-.oI6)
NPN silicon transistor designed for very high-
speed, low-power saturated switching applications for
computers in military and industrial service.
Collector electrically
connected to case
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 12 Vdc
5000
V"o-_J,iIN-....- - H
r::>.,----p--o Your
---
rz-
FIGURE 1 - TURN·ON AND TURN·OFF TIME TEST CIRCUIT
V"
-10%
~1O%
V"
l_l __
I
(NOTE 2) 270
t~ I INPUT WAVE FORMS I I...
5000 V"= +20V I I V,,=-20V
V,,= -3.3 V I I V.. = +17V
!S}
--t
I
I
Vou,
I
I
I
90%-
I
I'
I 90%- NOTE 3 - - 1""-.t
I-tM-l t-t...-t
OUTPUT WAVE FORMS
50
NOTE 1, With cerlain types of power supplies, it may be necessary 10 connect
25 ~F decoupling capacitors across Ihe power·supply terminals for Vee and VD.
+
NOTE 2, Input voltage (V,,) obtained from a pulse generator having an output impedance
Vn(NOTE 1) Vee = 3 V(NOTE I) of 50 ohms. V" rise lime ~ 1.0 ns, pulse duralion "" 300 ns, and duty factor
~2.0%.
NOTE 3, Input and output waveforms, shown above, monitored by means of an oscilloscope
having a rise time ~ 0.5 ns, input capacilance of probe ~ 2.5 pF wilh shunt
resistance ~ 3000 ohms.
2-211
2N1708 (continued)
ELECTRICAL .CHARACTERISTICS (T. = 2S'C "'e.. otherwisenot.d)
ON CHARACTERISTICS
DC Current Gain'" hFE -
(IC = 10 mAde, VCE = 1. 0 Vde) 20 -
Collector-Emitter Saturation Voltage VCE(s.t) Vde
(IC = 10 mAde, IB = 1. 0 wAde) - 0.22
(IC = 50 mAde, IB = 5.0 mAde) - 0.35
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product IT MHz
(IC = 10 mAde, VCE = 10 Vde, 1= 100 MHz) 200 -
Output Capacitance Cob pF
(V CB = 10 Vde, IE = 0, I = 140 kHz) - 6.0
V~,
PULSE
GENERATOR
4\ 0}_10%
(NOTE 21 VOLTAGE
V'" 91 . : "---IOV
(NOTE 2) (V,"I
500
'-__-'I~===__--"'"..... TIME
I (NPUT WAVE FORM
I
~
OUTPUT
VOLTAGE
IV...I
I-t,..,
'---......"O"'UT"'PU"'T"'W"'A"'VE--:F"'OR"'"M,--- TIME
NOTE 1: Input voltage (V,n) obtaiMd from pulse generator
V.. ~ II V(NOTE 11 Veo = 10 V(NOTE 11 having an output impedance of 50 ohms. V,n rise
time < 1 ns, pulse duration ~ 300 ns, and duty
factor ~ 2.0%.
2N1711
For Specifications, See 2N718A Data.
2-212
2N 1724 (SILICON)
2N1725
CASE 9
(TO-61)
MAXIMUM RATINGS
2-213
2N1724, 2N1725 (continued)
2-214
2N 1724, 2N 1725 (continued)
120
Ul
...............
i 100
~
.S" 80
~
.S'
'"
~ i'-.
is'"
60
...<l> --........ ~
~ 40
0 -...........
~
P-
o 20 -.....
~200
P-
o
o 25 50 75 100 125 150 175
o
T C' Case Temperature ( C)
1 ms 0.5 ms
10 250
5.0 /1S
0. t=nc or 1ess
8 .7' '\.
.$ 5 ms ....... ~ 'l\ / FIGURE 2 - 2N1724, 2N1725
...., 1.0
"......
<l>
0.5
::l In using these curves the average power derating
U curve (Fig. 1) must be observed to ensure oper-
... 'I ation below the maximum junction temperature •
.8 0.1
~" 0.05
'0
u
0.01
o 30 60 90
Collector-Emitter Voltage (Volts)
----
100
~
;- 2N1725 - r---. I".....
80 ............
.~ " r"
""a 60 'too..
------
<l>
...'" r--..
U
~
::l
Ii<
..:::
40
20
2N1724
- -- r--
i'"
0
0.1 0.2 0.3 0.4 0.5 0.8 1.0 2.0 3.0 4.0 5.0 8.0 10
I C ' Collector Current (Amp)
2N1742
For SpeCifications, See 2N499 Data.
2-215
2N 1751 (GERMANIUM)
PNP Germanium power transistor designed for high-
current switching applications requiring low saturation
voltages, short switching times and good sustaining
voltage capability.
Collector Connected to Case
• Alloy-Diffused Epitaxial Construction
CASE 3A
(T0-3 modified) • Low Saturation Voltages -
VCE(sat) = 0.3 Vdc (Max) @ IC = 20 Adc
VBE(sat) = 0.7 Vdc (Max) @ IC = 20 Adc
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 60 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal ReSistance, Junction to Case 9JC 0.8 °C/W
* Indicates JEDEC Registered Data.
18(off)_ 0.25 mH
-
*Ra
Rl = 1.0 Ohm, 20 Watts R5: Ie Adjust@ VeE = Vz
R2 = 10, Ohms, 2.0 Watts Ie
Ra = 0.1 Ohm,1.0% 81: Adjust for IB(on) = 10 18(on)
R4 s 0.04 Ohm B2 = 2.0 Vdc, Adjust for IB(oft) = 0.2 Adc
8a=12Vdc 50W
***vz
*Not required if current probe is used to read 18
"PRF'>'SO Hz
"'Zener selected to establish Sustaining Voltage.
NOTE: Series impedance and inductance must be kept to a minimum.
Adjust input pulse width for Ie = 25 A condition.
2-216
2N1751 (continued)
ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCEO Vdc
(IC = 100 mAdc, IB = 0) 60 -
Collector-Emitter Sustaining Voltage (See Figure 1) Vdc
VCE(sus)
(IC = 25 Adc) 45 -
"Floating Potential VEBF Vdc
(VCB = SO Vdc, ~ = 0) - 1.0
mAdc
• Emitter Cutoff Current ~BO
(VEB = 2.5 Vdc, IC = 0) - 50
ON CHARACTERISTICS
* DC Current Gain hFE -
(IC = 20 Adc, VCE = 1. 5 Vdc) 30 90
SMALL-SIGNAl. CHARACTERISTICS
• Common-Base Cutoff Frequency fab MHz
(Ic = 0.5 Adc, VCB = 10 Vdc) 1.5 -
"Small-Signal Current Gain hfe -
(IC = O. 5 Adc, VCE = 6.0 Vdc, f = 30 kHz) 20 -
SWITCHING CHARACTERISTICS
Rise Time
(Ic = 25 Adc, ~(on) = 2. 5 Adc,
t
r - 12 /.IS
Storage Ti me
~(off) = 2. 5 Adc)
t
s - 10 /.IS
Fall Time
(See Figure 2)
tf - S.O /.IS
1.1
SCOPE O-.......--JV'\I'Ir-----.
IB(on)
= 2.0 V
TUT
",28 V
Adj
IC = 25 A
CASE~
Industrial-type, silicon controlled rectifiers in a stud package
with current handling capability to 16 amperes at junction
temperatures to lOOOC. MCR equivalents available in TO-48
\ package - i.e. - 2N1842 available in T048 package as MCR1842.
*VRSM(rep) for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage.
2-218
2N 1842 thru 2N 1850 (continued)
2-219
2N1842 thru 2N1850 (continued)
MAXIMUM ALLOWABLE
FORWARD GATE CURRENT
IGM =2AMP FORWARD CONDUCTING CHARACTERISTICS
2.0 ....... --""'-T-. Ii:
:IE 100
I 5
2.0 VOLTS >- 50 f--TYPiCAl
1.0 GATE VOLTAGE
REQUIRED TO 1il 7 //
Ii: 0.5 TRIGGER ALL UNITS ~ 20 // MAXIMUM
:IE I
AS A TRIGGER CIRCUIT DESIGN CRITERIA a 1/
5
>- ~ ~ I ALL UNITS WILL TRIGGER AT ANY VOLTAGE ~
10
I AND CURRENT WITHIN THIS AREA
1il
a:
0.2 ~~: I
< .5.0
~
a:
a 0.1
i:A.-
=~;;
_c_
I
L. _ _ _ L 80_ mATOGATE CURRENT REQUIRED
TRIGGER ALL UNIT~ _
~
2.0 -- - -TJ lOO'C
w z,..:z: '"
:::>
!I I T, 25'C
>- ::Ie!:: (IOO'C - 50 mAl :il
< (-40'C - 150 mAl 1.0
to .05
,.:
i i:
-(T, = -40 TO +tOO'C) =
V. 3.5 VOLTS
z
< NOTE, VOLTAGE OROP MEASURED ==
!E z>- 0.5 I INCH FROM BOTTOM OF CASE -
TYPICAL PEAK FORWARD < , I
.02 GATE VOLTAGE 10 VOLTS !;;
TRIGGER AREA ;!;
0.2
: II
!I 1:' 0.1
.0001 i i 1
3 4 5 6 1 8 10 0,5 1.0 1.5 2.0 2.5 3.0
VGT. GATE VOLTAGE IVOLTS) VT, INSTANTANEOUS FORWARD ON VOLTAGE IVOLTS)
0.3
=
(T, 25'C - ANODE @ 1 VOLTS)
J
to
< I
FINS 1/16-'THICK COPPER
20 ~ WITH EMISSIVITY 90%=
> STUD MOUNTED DIRECTLY
<
DC, ItDJMt'L~8,U~.~~~,~: OR TO COPPER FIN
$'
5
MINIMUM SPACING 3/4"=
0 1:" 0
0 4 6 10
12 14 16 0 20 40 60 80 100
IT(AV), AVERAGE FORWARD CURRENT lAMP) TA• AMBIENT TEMPERATURE (OC)
2-220
2N 1842A thru 2N 1850A.(sILiCON)
Industrial-type, silicon controlled rectifiers in a stud
package with current handling capability to 16 amperes
at junction temperatures to 125°e.
*VRSM(rep) for all types can be applied on a continuous dc basis without incurring damage.
Ratings apply for zero or negative gate voltage.
2-221
2N1842 A thru 2N1850A (continued)
2-222
2N 1842A thru 2N 1850A (continued)
MAXIMUM ALLOWABLE
FORWARO GATE CURRENT
IGM = 2 AMP
FORWARD CONDUCTING CHARACTERISTICS
2.0-rr--......,.--..... !Ii 100
~ 50
1.0
~ I //
is: '"'" 20
'"~ 0.5 a TYPICAL 1'(/ ~/ MAXIMUM
I AS A TRIGGER CIRCUIT DESIGN CRITERIA ~ 10
>-
15 0.2 I ALL UNITS WILL TRIGGER AT ANY VOLTAGE
31 5.0
I ANO CURRENT WITHIN THIS AREA
'" I :''"i:
a'" 0.1 L L 80 mA GATE CURRENT
REQUIREO Tq TRIGGER ALL UNITS '" 2.0 I / NOTINCH,VOLTAGE DROP MEASURED
FROM BOTTOM OF CASE
w
~ - - - - (~'tS~CC'::-I~~) ---
:::>
53 1.0 II
to .05 z
VGT = 3.5 VOLTS
t-' ~ 0.5
!E TYPICAL TRIGGER POINT z
PEAK FORWARD «
.02
.0001
!I
GATE VOLTAGE 10 VOLTS
1.5
=2.0
TJ
TJ
= 12SoC
= 2S'C
2.5
VT.INSTANTANEOUS FORWARD ON VOLTAGE (VOLTS)
0.25 (TJ = 25°C. ANODE @ 7 VOLTS)
o 4 10 12 14 16 20 40 60 80 100 120
IT(AV). AVERAGE FORWARD CURRENT (AMP) T•• AMBIENT TEMPERATURE (OC)
2-223
2N 1893 (SILICON)
2N240S
MAXIMUM RATINGS
Rating Symbol 2N1893 2N240S Unit
Collector-Emitter Voltage VCEO 80 90 Vde
Collector-Emitter Voltage 100 140 Vde
VCER
Collector-Base Voltage VCS 120 Vde
Emitter-Base Voltage VES 7.0 Vde
CASE 31
(TO-5) Collector Current IC 0.5 1.0 Ade
Total Device Dissipation @ TA = 25"C PD 0.8 1.0 Watt
Collector connected
Derate above 25"C 4.57 5.71 mW/'C
to case
Total Device Dissipation @ TC - 25"C PD 3.0 5.0 Watts
Derate above 25"C 17.2 28.6 mW/'C
Operating and Storage Junction Temperature Range T J' T stg -65 to +200 'c
THERMAL CHARACTERISTICS
Characteristic Symbol 2N1893 2N240S Unit
Thermal Resistance. Junction to Case eJC 58.3 35 'C/W
2-224
2N1893, 2N240S (continued)
SMAll-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 50 mAde, VCE = 10 Vde; f = 20 MHz) 2N1893 50 -
Output Capacitance Cob pF
(VCB = 10 Vde, IE = 0, 100 kHz ~ f ~ 1.0 MHz) - 15
Input CllIPacitanee C ib pF
(V BE = 0.5 Vde, IC = 0, 100 kHz ~ f ~ 1. 0 MHz) 2N1893 - 85
(11 Pulse Test: Pulse Width ~ 300 IJS, Duty Cycle ~ 2.0%.
2-225
2N 1924 thru 2N 1926 (GERMANIUM)
CASE 31(1)
(TO-5)
MAXIMUM RATINGS
2-226
2N 1924 thru 2N 1926 (continued)
2N1926 1.5 -
Small-Signal Short-Circuit Forward-Transfer Current Ratio hfe
VCE = -5 Vdc, IE = 1 mAdc, f = 1 kHz
2N1924
2N1925
30
44
64
88
-
2N1926 60 120
2-227
2N1959 (SILICON)
MAXIMUM RATINGS
2-228
2N 1959 (continued)
ON CHARACTERISTICS
DC Current Gain
(IC = 150 mAde, VCE = 10 Vdc)
hFE
40 120
-
Collector-Emitter Saturation Voltage VCE(sat) Vdc
(Ie = 150 mAde, lB = 15 mAde) - 0.45
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product tT MHz
(Ic = 25 mAde, VCB = 10 Vdc, t = 100 MHz) 100 -
Output CapaCitance Cob pF
(VCB = 10 Vdc, IE = 0, t = 1 MHz) - 18
_lp.s_
IkQ 40Q
+15
INPUT
t, ,,;; 4 ns 0 - - 1 - - - - - - 4 - -
lpi IkQ /":v--o() SCOPE
-IS
INPUT
51Q t, t,
OUTPUT 10%
2-229
2N 1970 (GERMANIUM)
2N 1980 thru 2N 1982
~
PNP germanium power transistors for general pur-
pose amplifier and switching applications.
CASE 5
(T0-36)
i ~I J
MAXIMUM RATINGS
Rating Symbol 2N1970 2N1980 2N1981 2N1982 Unit
Collector- Base Voltage vCB 100 50 70 90 Volts
Collector-Emitter Voltage VCEO 50 30 40 50 Volts
Emitter- Base Voltage VEB 40 20 20 20 Volts
Collector Current IC IS Amp
Power Dissipation at TC = 25 0 C PD 170 Watts
Junction Temperature Range TJ -65 to +110 °c
ELECTRICAL CHARACTERISTICS (TA = 2SOC unless otherwise noted)
CASE 31
(TO·5)
Collector connected to cas.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
2-231
2N1983, 2N1984 (continued)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 5.0·mAde, IB = 0.5 mAde) - 0.25
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwldth Product iT MHz
(IC = 50 mAde, VCE • 10 Vdc, f = 20 MHz) 40 -
Output Capacitance Cob pF
(VCB = 10 Vde, IE = 0) - 45
2-232
2N 1990 (SILICON)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector - Base Voltage VCS 100 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case 8JC 62.5 °C/W
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 30 mAdc, VCE = 10 Vdc) 20 -
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 2.0 mAde, IB = 0.2 mAdc) - 0.5
2N 1991 (SILICON)
For SpeCifications, See 2N1l31 Data.
2-233
2N2042 , 2N2043 (GERMANIUM)
2-234
2N2042,2N2043(continued)
(VCB = 6 V, I
E
= 0) - 25
--
0 120 @) ./
'\.
-
100
~ 100 ......II! -:/ I
a..
i:i =0.375°C/mW MAX .....
")... '\ 80 L- le- 5OmA
80 6", 0 .-'
Ci
.... 60 '-" '#- 60
~ 40 .....'-
-.....;\.
40
,f 20 20
00 10 20 30 40
TEMPERATURE (OC)
50 60 70 80
'"
90 100
o
-60 -40 -20 o +20 +40
TA • AMBIENT TEMPERATURE (OC)
+60 +80 +100
DC CURRENT GAIN versus COLLECTOR CURRENT COLLECTOR CURRENT versus BASE·DRIVE VOLTAGE
70 200
0; 180
/ 1/
60
Va = 1 Vd.
II!
:I! 160 I-- Vel = 1 Vd.
I,
1/ /
z 50
\ Te = 25°C
~140
Te = 25°C
2N2043/)
V
"/
:;;:
,
""
co !. 120
I 40
......... !O:
~ 100
1//
::>
<> 30
~ ::>
:;: 80
/ '/ 2N2042
- I
<> ...........
0
2-235
2N2060, A (SILICON)
2N2060 JAN,JTXAVAILABLE
2N2223,A
2N2480,A NPN silicon annular Star dual transistors for differ-
ential amplifiers and other applications requIrmg a
matched pair with a high degree of parameter uniform-
ity.
MAXIMUM RATINGS(eachside)
2N2060
2N2060A
Rating Svmbol 2N2223
2N2480 2N2480A Unit
Case 654-04 2N2223A
TO-78 Collector-Emitter Voltage VCEO 60 40 40 Vde
2-236
2N2060, A, 2N2223, A, 2N2480, A (continued)
Noise Figure NF dB
(IC = 0.3 mAdc, VCE = 10 Vdc, RS " 510 ohms,
f " 1. 0 kHz, BW = 1. 0 Hz) 2N2480, 2N2480A - 8.0
(IC = 0.3 mAdc, VCE = 10 Vdc, RS = 510 ohms,
f = 1. 0 kHz, BW = 200 Hz) 2N2060, 2N2060A - 8.0
(IC = 0.3 mAde, VCE = 10 Vdc, RS = 1. 0 k ohm.
f = 1. 0 kHz, BW = 15.7 kHzt) - 8.0
tAmphher: 3.0 dB pomts at 25 Hz and 10 kHz with a roll-off of 6.0 dB per octave.
2-237
2N2060, A, 2N2223, A, 2N2480, A (continued)
2-238
2N2075 thru 2N2082 (GERMANIUM)
2N2075A thru 2N2082A
THERMAL CHARACTERISTICS
175
~
~ 150
~!II..
z0
~
iii
125 "" ~
POWER-TEMPERATURE DERATING CURVE
The maximum average power is related to maxi-
'"
mum junction temperature by the thermal resistance
c factor.
100
~ This curve has a value of 170 Walls at case tem-
"" "
peratures of 25°C and is 0 Walls at 110°C with a
~
...
~
ID 75
linear relation between the two temperatures such
that:
IIOO_Tc
~ allowable P. = 0.5
~
...c
co
50
iii!
~
c 25 "-
~
,t
0
o 10 20 30 40 50 60 70 80 90 100 110
Te. CASE TEMPERATURE (OC)
2-239
2N2075 thru 2N2082 (continued)
(V BE = VBE(max) , IC = 0, T C =+71"C) - 15
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 1. 2 Ade, VCE = 2.0 Vdc) 2N2075 thru 2N2078 25 100
2N2079 thru 2N2082 40 160
(IC = 5.0 Adc, VCE = 2.0 Vdc) 2N2075 thru 2N2078 20 40
2N2079 thru 2N2082 35 70
(IC =5.0 Adc, VCE = 2.0 Vdc, TC = -55°C) 2N2075 thru 2N2078 15 -
2N2079 thru 2N2082 25 -
(IC = 12 Adc, VCE = 2.0 Vdc) 2N2075 thru 2N2078 8 -
2N2079 thru 2N2082 12 -
Collector-Emitter Saturation Voltage Vdc
V CE(sat)
(IC= 13 Adc, IB = 2. 0 Adc) 2N2075 & 76, 2N2079 & 80 - 0.7
2N2077 & 78, 2N2081 & 82 - 0.9
Base-Emitter On Voltage VBE(on) Vdc
(IC = 5. a Adc, VCE = 12 V:dc) - 0.9
DYNAMIC CHARACTERISTICS
Common-Emitter Cutoff Frequency
(IC =5.0Adc, VCE =6.0Vdc)
f
Ole
5. a I- kHz
t Typ jJ.s
Rise Time r
(V CE = 12 Vdc, IC(on) = 12 Adc, I B .= 2. a Adc) 2N2075 thru 2N2078 9.0
2N2079 thru 2N2082 6.0
Fall Time tf jJ.s
(V BE = 6. a Vdc, IC(off) = 0, RBE = 10 ohms) 2N2075 thru 2N2078 12
2N2079 thru 2N2082 13
*To avoid excessive heating of collector junction, perform this test with a sweep method.
2-240
2N2075 thru 2N2082 (continued)
SAFE OPERATING AREAS
60 60
50
2N2075, ~N20r9 50 2N2076 2N2080
1
-
40 40
30 I I I
Sm. 500,.. 250~s
30
1m. 5ms Ims 500~s 250~s
~ ~ ;:
20 ....... '20
~
'\ l\. ~ ~....... r 160~s I ~ r\.
........:: 100~s
OR LESS
10 - ORLESS- f--
O. 5
l70·WATT /
POWER DISSIPATION AT
25°C CASE TEMrERAiURE
" 7' ......
/ .........
" ~
-
d~/
""
f\...
1\
\ l70.WATTI /
7
POWER DISSIPATION AT
25 CASj TEMrERArE
V
"' '\
de
i\.
I)'
rl"'
,-
\.
0.5
0.4 0.4
T~
I
O. 3 1001v. 8 mA 0.3
(2NllOO ONLY) TO 80V. 8 mA
O. 2 WITH BACK BIAS APPLIED 0.2 -- ~~r1J~A~~~~~§ ~~~nEO
(iULSE tURT ONT"i-
-\ tOR P1ULSE fURVjS ONLt) -
-~\
O. 1 0 10 20 30 40 50 60 70 80 90 100 0.1
o 10 20 30 40 50 60 70 80 90 100
COLLECTOR·EMITTER VOLTAGE (VOLTS) COLLECTOR.£MITTER VOLTAGE (VOLTS)
60 60
50 2N2077,2N2081 50 2N2078. 2N2082
40 40
30
I 30 I
5ms Ims 500~s 2S0p.5 5msec Ims 500"s 250"s
20 0
'\ ~~ \ ~~ ~lOO~s
''""
100~s
OR LESS OHESS
10 10
i'-. ~ ~...
i
~
is
:i
I-
13
3
" ~
L "-
...... -, ~ 5
3
2
I'" ~ ~
l70·WATT ,-
POWER DISSIPATION AT
/
" \\\
\~
"\
\.'
I
25°C CASE TEMPERATURE
170·WATT
r- POWER DISSIPATION AT \. 1
0.5
25°1 .ASE TrPERATiR:e/
~ O. 5
de \
0.4 O.4
0.3 ~IT060v.18mA I O. 3
0.2 r-- ~~mA~~~41~~~mIED O. 2
0.1
o 10
IIFOR PU~SE CUR~ES ONL~)_
20 30 40 50
-\ 60 70
1
O. 0 10 20 30 40 50
COLLECTOR·EMITTER VOLTAGE (VOLTS) COLLECTOR·EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate Ic- (Duty cycle of the excursions make no significant
V CE limits below which the device will not go into change In these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
2N2075-2N2078
CURRENT TRANSFER CHARACTERISTICS TRANSCONDUCTANCE CHARACTERISTICS
12 r---,----r--~----~--,---~--_, 12
10 .....--4----1-- 10 Ve•
I= J -2V //
8 8
/ /I'
~~
+8~oC
.........
6 6 +2~OC"
41----ifII''--4----I----t--i--t----l 4
-400C~
rJ
2
/. ~v
~~
/
a
0.1 0.2 D.3 0.4 0.5 0.6 0.7 a 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I•• BASE CURRENT (AMPERES) V... BASE EMITTER VOLTAGE (VOLTS)
2-241
2N2075 thru 2N2082 (continued)
2N2019-2N2082
CURRENT TRANSFER CHARACTERISTICS TRANSCONDUCTANCE CHARACTERISTICS
OL-~~~~~~~ __L-~~~__-J
0.6 o 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
I., BASE CURRENT (AMPERES) v", BASE·EMmER VOLTAGE (VOLTS)
2N2096 (GERMANIUM)
2N2097
For Specifications, See 2N12 04 Data,
2N2099
2N2100
2-242
2N2137 thru 2N2146 (GERMANIUM)
2N2137A thru 2N2146A
MAXIMUM RATINGS
Apply also to standard, non-A series
2-243
2N2137 thru 2N2146 (continued)
ELECTRICAL CHARACTERISTICS
*Characteristics apply also to corresponding, non-A type numbers.
ON CHARACTERISTICS
DC Current Gain h FEl . -
(IC = O. 5 Adc, VCE = 2.0 Vdc)t 2N2137A-2N2141A* 30 45 60
2N2142A-2N2146A* 50 70 100
(I C = 2.0 Adc, VCE = 2.0 Vde) 2N2137A-2N2141A* hFE 15 22 -
2N2142A-2N2146A* 25 33 -
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 2. 0 Adc, IB = 200 mAde) - 0.12 0.5
DYNAMIC CHARACTERISTICS
Common Emitter Cutoff Frequency
(IC = 2.0 Ade, VCE = 6.0 Vdc)
2-244
2N2137 thru 2N2146 (continued)
I \ 1\.~ ~ J
500tS
0
"-
10 20 30 10 20 30 40 50
VeE, COLLECTOR-EMITTER VOLTAGE IVOLTSI
\ \ t\\~ 1'\f\\
"1
~~ v
2
\, 5ms~ ~ i--
5001'5
1
250 1'$-
5ms-
f\\,~
5001'5
i
~~~ts~-
J ~ (\
5ms
5001'5
I
2501'S I--
~ ~ "~
OR LESS
OR LESS
1ms- 1\ 1ms-
1\ 1ms l-
~~
dC~ ~
\
dc~1 ~~ '\
!\
1
dC----r---"
f\-. 1\ i 1\ ......... ~l I l' "
~
I'--- t--- ~
O
10 20 30 40 50 60 70 0 10
I
20 30 40
j"--.. t -
50 60
~
70 80 0 10 20 30
I
40 50 60 70 80 90 100
VeE, COLLECTOR-EMITTER VOLTAGE IVOLTS)
2-245
2N2137 thru 2N2146 (continued)
i 1.0
TJ-IOO·C/
J ~
0
/
-
is
~
l5 O. S
/ I
TJ 2S· C
i
~
20
10
TJ
I--TJ - 2S· C /
100· /
"/ IY V
/ / TJ S·C
50
TJ -IOO·C/
/
1/
/
/
/
/
/
TJ - -SS·C ~
is
1. O_TJ
-TJ
25·
SS·C
-
~ o. 5 " ::-...
~ 5.0 T 25· C j 0: 3 ""'....
O.2
2.0 / / I
/ I I O. I
0.2 0.4 0.6 0.8 1.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0
V... BASE-EMITTER VOLTAGE IVOLTS) Ie. COLLECTOR CURRENT lAMP)
I
.9
40
I, -'20'mA
~
~
8
.9
30
20
1,-IOmA
2-246
2N2137 thru 2N2146 (continued)
1.0
80
\
~
o '" 70
S
\
2: 0.8
w
'"~ '"w 60
, r'\. 2N2142A·2N2146A -
"'
~
'">
e:i 0.6
,.-
z
~
.... 50
/
~ r-.... /
~
"
~
V
i
~~ 0.4
V
./ ~
<.>
'"
~
40
30
/
~
...............
--
r--..
"-- -
0.2
/ 20
L 2N2137A· 2N2141A
f 10
o o
o o
Ie. COLLECTOR CURRENT (AMPS) Ie. COLLECTOR CURRENT (AMP)
THERMAL CHARACTERISTICS
2-247
2N2152 thru 2N2154 2N2156 thru 2N2158 (continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage * BVCEO* Vdc
(IC ~ 1. 0 Adc, IB ~ 0) 2N2152,2N2156
2N2153,2N2157
30
45
-- -
-
2N2154,2N2158 60 - -
Collector-Emitter Breakdown Voltage * BV CES * Vdc
(Ic~ 300mAdc, VBE~ 0) 2N2152,2N2156 45 - -
2N2153,2N2157 60 - -
2N2154,2N2158 75 - -
Floating Potential VEBF Vdc
(V CB ~ 45 Vdc, IE ~ 0) 2N2152,2N2156 - - 1.0
(V BE ~ 40 Vdc, IC ~ 0) - 0.2 4. 0
ON CHARACTERISTICS
DC Current Gain hFE -
(IC ~ 5.0 Adc, VCB ~ 2 Vde) 2N2152,2N2153,2N2154 50 75 100
2N2156, 2N2157, 2N2158 80 105 160
(IC ~ 15 Adc, VCB ~ 2 Vdc) 2N2152, 2N2153, 2N2154 25 47 -
2N2156, 2N2157, 2N2158 40 63 -
(IC ~ 25 Ade, VCB ~ 2 Vde) 15 38 -
Collector-Emitter Saturation Voltage VCE{sat) Vdc
(IC ~ 5.0 Adc, IB ~ 500 mAdc) - 0.06 0.1
*To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
2-248
2N2152 thru 2N2154, 2N2156 thru 2N2158 (continued)
SAFE OPERATING AREAS
The Safe Operating Area Curves indicate Ic- (Duty cycle of the excursions make no significant
V CE limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum TJ, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse power conditions.
........."
30 30
~' \\ ~
20
" \ \
\~ "~ ~
5ms
20
"'" 5ms
I
10
I'.... I-- 1m;
10 ~ " ~
" ~
1ms
le(MAX~
i'- ~ ~ ~ ~
5~01'S - 5001'5
~
Ie (MAX.) '"
:3
:f
:::;;
5
...
4
5
3
2N2152
_2N2156
I I / .... ,"' .\
........ ..,\\
-2501's
-+-
t'-.. 501'5 _
~
~
~ 4
~ 3
2N2153
5 i--2N2157
l'..
/ ~ ""
......... '-\'
-2501'S
'"""'l\L
~~Ol's
I
~~
"
15 OR LESS 170.JIATT I
1\\
170-WATT
§'" 2
,
g§ .2 POWER DIS.SIPATION AT t- POWER DISSIPATION AT
~
~
:::> 25°C CASE TEMPERATURE <.)
25°C CASE TEMPERATURE
<.) OR LESS
o'"
'"o de/ E de/
~
1
~
::j
~
o<.)
o
",
<.) 0,5 0,5
0.4 0,4
0,3 0,3
0,2 0,2
0,1 0,1
o 10 20 30 40 50 o 10 20 30 40 50 60 70
\~I\..
5ms
Ims
I __ !~ 75
'\
:3 10 '\
~ ~ r--
e5
"-
:::;;
~
15
'"'"i3
5
4
3
" ~ .....
/
de
7'
I\,"
..... ~,~\
;:xr-,."i ~ -J
500'1'5
250 l's
I
_
re 50
25
r\.
'\
"-
2
'\
~
"\ , 5°it s o
'"
I'!
~
o<.)
I- 170·WATT Y
POWER DISSIPATION AT
~
OR LESS o w w ~ ~ ~ w ro
Te, CASE TEMPERATURE lOCI
~ ~ ~ ill
allowable Pn = 1100 - Tc
O. 5
2....:249
2N2152 thru 2N2154, 2N2156 thru 2N2158 (continued)
0 30
I
Ve ,-2V Ve,-2V
5
. . . .J. . /. 5
0
2N2156-2N2~
~V- 0
/
/~VV
V
5
0 !
V
r V
2N2152 -2N2154
5
0
IAllTY~y
V
5 h 5
/
/
f
o
o u ~ M U ~ MUM
I,. BASE CURRENT (AMPS)
M
0
-V0.2 0.4 0.6 0.8
VIE. BASE-EMITIER VOLTAGE !VOLTS)
LO L2
OJ
Ve,-2V Ve ,-2V If
0
16 1\
/
\ 0.6
7
0\ 0.5
\ , i O.4
7
~N2156 - 2N2158 ~
i3 (ALL TYPESlj
0'" ~ O. 3
~ I~ r-.. ............ /
2N21~ r-- r--- r-- O.2
40
2N2152 -
O. I
V
0 10 15
Ie. COLLECTOR CURRENT lAMP)
20 25 30
0
0.2 -V 0.4 0.6 0.8
VIE. BASE-EMITTER VOLTAGEIVOLTSI
LO L2
2-250
2N2192,A,B thru 2N2195,A,B
(s.ILlCON)
CASE 31
(TO-S)
Collector connected to case
MAXIMUM RATINGS
2N2192
2N2192A
2N2192B 2N2193 2N2195
Symbol 2N2194
Rating 2N2193A 2N2195A Unit
2N2194A 2N2193B 2N2195B
2N2194B
Collector-Base Voltage VCB 60 80 45 Vdc
FIGURE 1
2N2193, A, B}
Vin = 15 V, Vb = 15 V 2N2192, A, B - Vin = 7.5 V, Vb = 7.5 V
2N2194,A,B
-IV~----------~~--------~
1 pF
Scope Input:
=
R 10 Megohms
tr = 20 ns C = 11.5 pF
t, = 20 ns
Rgon = 50 n 330 pF
7V J
2-251
2N2192,A,B thru 2N2195,A,B (continued)
---
(V CB = 30 Vde, IE = 0, T A = 150·C) 2N2192, A, B 15
2N2194, A, B 25
2N2195,A, B 50
(V CB = 60 Vde, IE • 0) 2N2193, A, B - 0.010
(V CB = 60 Vde, IE = 0, T A • 150·C) 2N2193, A, B - 25
Emitter Cutoff Current lEBO /lAde
--
(VES = 3 Vde, IC = 0) 2N2192, A, B, 2N2194, A, B 0 •.050
2N2195,· A, B 0.100
(VEB = 5 Vde, IC = 0) 2N2193, A, B - 0.050
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC - 150 mAde, IB = 15 mAde) 2N2192 thru 2N2195
2N2192A thru 2N2195A
-- 0.35
0.25
2N2192B thru 2N2195B - 0.18
Base-Emitter Saturation Voltage
(Ic = 150 mAde, IB - 15 mAde)
VBE(sat) -- 1.3
Vde
2-252
2N2212 (GERMANIUM)
MAXIMUM RATINGS
Rating Symbol Value Unit
~
"Collector-Emitter Voltage VCER 120 Vdc
O~~
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
R
.Thermal Resistance, Junction to Case 6 JC 0.83 ·c/W
"Indicates JEDEC Registered Data_ ,...
I550MM-
==1 ~ ...
FIGURE 1 - SUSTAINING VOLTAGE TEST CIRCUIT
...
~rtiC.1 ~~
1 .. ffi ~.... ! ......
I
0.05 .. ~ lN1181 - I-~
C~mon
ill! I--Hli-
.... 1.0 .... '"\ 1-Hl/-'1--1I011IR
~.~t:><:~ $
1.0@
Horizontal 100W
~'-.!> >-0
'-20Hz
IC A4/i~1. 10 mH ~1180V~ ~~! ~ ~ I~ ....
,I' i"-VCEllUIl 0-150
Duty Cycle = 0.5% 10
U
----f- Push to Tast Ad/ust IB= re Collector Connected to Cue
CASE 4-04
.r. 5.0.1
7
3.0 ITO-41,
2-253
2N2212 (continued)
ON CHARACTERISTICS
*DC Current Gain
(Ic = 0.6 Ade, VCE = 1. 0 Vdc)
hFE
50 200
-
(Ic = 1.2 Ade, VCE = 1.0 Vde) 60 200
(Ic = 5.0 Ade, VCE = 2.0 Vde) 50 120
Collector-Emitter Saturation Voltage Vde
VCE(sat)
(IC = 5.0 Ade, IS = 0.5 Adc) - 0.5
*Sase-Emitter On Voltage Vde
VSE(on)
(IC = 5.0 Adc, VCE = 2.0 Vdc) - 1.0
SMALL-SIGNAL CHARACTERISTICS
*Small-Signal Current Gain
(IC = 0.5 Ade, VCE = 6.0 Vdc, f = 30 kHz)
SWITCHING CHARACTERISTICS
Rise Time
(IC = 5.0 Ade, lSI = 0.5 Ade, IS2 = 0.5 Ade)
tr - 7.0 /Ls
Storage Time
(See Figure 2)
ts - 10 /Ls
Adjust for
Ie = 5.0 A
+13.5 V
100,.. - -.....I---I~
27
PRF = 60 Hz
2-254
2N2218I A, 2N2219I A 2N2221 I A{sILiCON)
2N2222,A, 2N5581 , 2N5582
SELECTION 3UIDE
Characteristic
rr
BVeEO hFE
Device le= 10mAdc Ie = 150mAdc Ie = 500 mAdc l D.2"
rna
ji
Type Volts MinIMax Min Package o.17B DlA1 DlA
2N2218
2N2219
30
40/120
100/300
20
30
TO-5 m. I ~om Weight ~ 1.1Sgr.m
2N2221 40/120 20
30 TO-18
2N2222 100/300 30
/!
2N5581 40/120 25 o.soo
40 TO-46
2N5582 100/300 40 O.!!.!§ MIN CASE 22(1)
~
O.019 D1A
2N2218A 40/120 25 TO·1B
40 TO-5
2N2219A 1001300 40 1111. EmlulIl
2 ,~
2N2221,A
2N2221A 25 2N2222.A
40/120 3.Coliector
40 TO-18
2N2222A 100/300 40
0.100
'. Lr"
*MAXIMUM RATINGS
2N2218 2N2218A
2N2219 2N2219A 2N5581
Rating Symbol Unit
2N2221 2N2221A 2N5582
2N2222 2N2222A
Coliector·Emitter Voltage VeEO 30 40 40 Vde
I
Coliector·Base Voltage Vea 60 75 75 Vde
-I ' DDB'
~
Total Device Dissipation @TA =25°C Po 0.8 0.5 0.5 Watt 2N55B1
2N55B2
Derate above 2SoC 5.33 3.33 3.33 mwfle
Total Device Dissipation @TC= 2SoC Po 3.0 1.8 2.0 Watts
Derate above 250 e 20 12 11.43 mwfle
Operating and Storage Junction TJ,Tstg - - 6 5 to + 2 0 0 - °e
Temperature Range
2-255
2N2218,A, 2N2219,A, 2N2221 ,A, 2N2222,A, 2N5581 ,2N5582 (continued)
OFF CHARACTERISTICS
Collector~Emitter Breakdown Voltage BVCEO Vde
(lC = 10 mAde, IB = 0) Non-A Suffix 30 -
A-Suffix,2N5581,2N5582 40 -
Collector-Base Breakdown Voltage BVCBO Vde
(lC = 10 "Ade, IE = 0) Non-A Suffix 60 -
A-Suffix, 2N5581,2N5582 75 -
Emitter-Base Breakdown Voltage BVEBO Vde
(IE = 10 "Ade, IC = 0) Non-A Suffix 5.0 -
A-Suffix,2N5581,2N5582 6_0 -
Collector Cutoff Current ICEX nAde
(VCE =60 Vde, VEB(off) = 3.0 Vde) A-Suffix, 2N5581 ,2N5582 - 10
Collector Cutoff Current ICBO "Ade
(VCB = 50 Vde, IE = 0) Non-A Suffix - 0.01
(VCB = 60 Vde, IE = 0) A-Suffix,2N5581,2N5582 - 0.Q1
(VCB = 50 Vde, IE = 0, T A = 150o C) Non-A Suffix - 10
(VCB =60Vde,IE =0, TA = 150o C) A-Suffix, 2N5581 ,2N5582 - 10
Emitter Cutoff Current lEBO nAde
(VEB = 3.0 Vde, IC = 0) A-Suffix, 2N5581 ,2N5582 - 10
Base Cutoff Cu rrent IBL nAde
(VCE = 60 Vde, VEB(off) = 3.0 Vde) A-Suffix - 20
ON CHARACTERISTICS
DC Current Gain hFE -
(lC = 0.1 mAde, VCE = 10 Vde) 2N2218,A,2N 2221 ,A,2N5581 (1) 20 -
2N2219,A,2N2222,A,2N5582( 1) 35 -
(lC = 1.0 mAde, VCE = 10 Vde) 2N2218,A,2N2221,A,2N5581 25 -
2N2219.A,2N 2222,A,2N5582 50 -
(lC = 10 mAde, VCE = 10 Vde) 2N2218,A,2N2221,A,2N5581 (1) 35 -
2N2219,A,2N2222,A,2N5582(1 ) 75 -
(lC = 10 mAde, VCE = 10 Vde, TA = -550 C) 2N2218A,2N2221A,2N5581 15 -
2N2219A,2N 2222A,2N5582 35 -
(lC = 150 mAde, VCE = 10 Vde)(l) 2N2218,A,2N2221,A,2N5581 40 120
2N2219,A,2N2222,A,2N5582 100 300
(lC= 150 mAde, VCE = 1.0Vde)(1) 2N 2218A,2N 2221 A,2N 5581 20 -
2N2219A,2N2222A,2N5582 50 -
(lC = 500 mAde, VCE = 10 Vde)(l) 2N2218,2N2221 20 -
2N2219,2N2222 30 -
2N2218A,2N2221A,2N5581 25 -
2N2219A,2N2222A,2N5582 40 -
Collector-Emitter Saturation Voltage(l) VCE(sat) Vde
(lC = 150 mAde, IB = 15 mAde) Non-A Suffix - 0.4
A-Suffix, 2N5581,2N5582 - 0.3
(I C = 500 mAde, I B = 50 mAde) Non-A Suffix - 1.6
A-Suffix, 2N5581 ,2N5582 - 1.0
Base-Emitter Saturation Voltage( 1) VBE(sat) Vde
(lC = 150 mAde, IB = 15 mAde) Non-A Suffix 0.6 2.0
A-Suffix, 2N5581 ,2N5582 0.6 1.2
(lC = 500 mAde, IB = 50 mAde) Non-A Suffix - 2.6
A-5uffix, 2N5581 ,2N5582 - 2.0
2-256
2N2218,A, 2N2219,A, 2N2221,A, 2N2222,A, 2N5581, 2N5582 (continued)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth P,oduet(2) IT MHz
(lC: 20 mAde, VCE : 20 Vde, I : 100 MHz) All Types, E .eept 250 -
2N2219A,2N2222A,2N5582 300 -
Output Capaeitanee(3) Cob - 8_0 pF
(VCB: 10 Vde, IE = 0, I : 100 kHz)
Input Capaeitanee(3) Cib pF
(VEB = 0.5 Vde, IC =0, I = 100 kHz) Non-A Sufti. - 30
A-Sum.,2N5581,2N5582 - 25
I nput Impedance hie k ohms
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0kHz) 2N2218A,2N2221 A,2N5581 1.0 3.5
2N2219A,2N2222A,2N5582 2.0 8.0
(lC: 10 mAde, VCE = 10 Vde, I: 1.0 kHz) 2N2218A,2N2221A,2N5581 0.2 1.0
2N2219A,2N2222A,2N5582 0.25 1.25
Voltage Feedback Ratio h,e X 10-4
IIC: 1.0 mAde, VCE = 10 Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 - 5.0
2N2219A,2N2222A,2N5582 - 8.0
(IC: 10 mAde, VCE : 10 Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 - 2.5
2N2219A,2N2222A,2N5582 - 4.0
Small-Signal Current Gain hIe -
IIC: 1.0 mAde, VCE: 10Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 30 150
2N 2219A, 2N 2222A,2N 5582 50 300
IIC: 10mAde, VCE: 10Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 50 300
2N 2219A,2N 2222A,2N5582 75 375
Output Admittance hoe jJ.mhos
(lC: 1.0 mAde, VCE : 10 Vde, I : 1.0 kHz) 2N2218A,2N2221A,2N5581 3.0 15
2N2219A,2N2222A,2N5582 5.0 35
IIc:10mAde,VCE:10Vde, I : 1.0kHz) 2N2218A,2N2221 A,2N5581 10 100
2N2219A,2N2222A,2N5582 25 200
Collector-Base Time Constant 'b'Ce po
II E : 20 mAde, VCB: 20 Vde, I : 31.8 MHz) A-Sullix,2N5581,2N5582 - 150
Noise Figure NF d8
(lC: 100 !lAde, VCE : 10 Vde,
RS: 1.0kohm, I : 1.0 kHz) 2N2219A,2N2222A - 4.0
2-257
2N2218,A,2N2219,A, 2N2221,A,2N2222,A,2N5581,2N5582 (continued)
4.0
z 3.0 I J
CE ~ 1.0 v'_
;;:
- 1- - 1- -
--
- - -VCE=lOV_
-
-
OJ TJ=175 0C
~
f- 2.0 ,....- I I
~
r-
'" 250~
~
13
'-'
1.0
"':'i- - r l- I-- r- - r---~ - "-
'"
5l
N 0.7
:::;
«
~ 0.5 1 - -
-55 0C
- ......
i'...-- ,
0
z
~ 0.3 "" ~
'\~
."C
This graph shows the effect of base current on collector current. /30
~ 0.8 \\ TJ ~ 25°C (current gain at the edge of saturation) is the current gain of the
transistor at 1 volt. and /3. (forced gain) is the ratio of 1,/1 .. in a circuit.
~ \\
---
EXAMPLE: For type 2N2219. estimate a base current (I.) to insure
~§;
ffi
t::
0.6 \ 1""-
"-
- Ie ~ 300 rnA
saturation at a temperature of 25'C and a collector current of
150 rnA.
Observe that at I, = 150 mA an overdrive factor of at least 2.5
is required to drive the transistor well into the saturation region. From
~ o. 4 150 rnA
Figure 1. it is seen that h" @ 1 volt is approximately 0.62 of h" @ 10
volts. Using the guaranteed minimum gain of 100 @ 150 mA and
O:l \
--
10 V. /30 = 62 and substituting values in the overdrive equation.
~
.; O. 2 "- 50 rnA
we find:
2-258
2N2218,A, 2N2219,A, 2N2221,A, 2N2222,A, 2N5581, 2N5582 (continued)
NOISE FIGURE
VCE = 10 V, TA = 2SoC
FIGURE 5 - FREQUENCY EFFECTS FIGURE 6 - SOURCE RESISTANCE EFFECTS
6.0
5.0 r\.
"I'.
10
B.O
,, f~1.0 kHz
Ic ~ LOrnA
1
IOOpA J111
11111
J ;~~I
iii iii
:g 4.0
Ic~lOpA
:g /
6.0
~
~
""
:::>
co
1"'" Rs ~ 4.3 kll
0::
/ I
0:: 3.0
~
~
~
~
~ \ I) V
i..: II C5 4.0
z:
..: r--. ........
z: 2.0 z:
........ Ic= 100m
I'I'-r-. Rs ~ 1.0 Il
1.0
2.0
""
o
0.1 0.2 0.5 1.0 2.0 5.0 10 20
II 50 100
o
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f. FREQUENCY (kHzl R,. SOURCE RESISTANCE (k OHMSI
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 2SoC
This group of graphs illustrates the relationship between hfe and other "h" parameters
for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were
selected and the same units were used to develop the correspondingly numbered curves
on each graph,
FIGURE 7 -INPUT IMPEDANCE FIGURE 8 - VOLTAGE FEEDBACK RATIO
20 ........ 0
........ r-.,. .. 30 '\.
~ 7.0
i5
10
~ 20 "
"\
~
~ 5.0
~
~
0'
i
3.0 1
:!! 2.0
........ .......
~ 5. 0 ....
~ 2...... 1
I' ~.
"" 1"\
"
-
~ 1.0 3.0
~
0.7
O. 5
.J 2. 0
2 " r-....
O.3
0.1 0.2 0.5 1.0 2.0 5.0
"
10
r--
20
I.0
0.1 0.2 0.5 1.0
........
i"--
2.0 5.0 10 20
Ic. COLLECTOR CURRENT ImAdel Ic. COLLECTOR CURRENT ImAdel
200 - 100 J
~ ,...., ..... ~
I ~
-- ~
~ ...
I- i
~
~ 50 'f
~ ~ g
a
100
2
~ 1~
,
1 70 ~ 20
50
V
1/
../ is
.J 10 - ./ V
./
2
30 5. 0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20
Ic. COLLECTOR CURRENT (mAdel Ic. COLLECTOR CURRENT ImAdel
2-259
2N2218,A, 2N2219,A, 2N2221 ,A, 2N2222,A, 2N5581, 2N5582 (continued)
5000 ~ =
10Ot\.
"\
I\v
1,@5V
'" \. I,
TJ ~ 25°C
Ie/I, ~ 10
2000
I- -
TJ 25°C
'ell,-IO
f-- - Vee = 5V(UNLESS NOTED)
I" I-'
I'\. Vee lOV ~
UNlESS NOTED ./
1000 QT, TOTALCONTRO~~
I' t..@V"loff " g CHARGE
,,2:y 1'\ ~ 500
HIGH GAIN TYPES
~
~' \ L?W GAIN TYPES
200 i---'
~
0 Vee 30V
I'
,
'.I '-'
r-- t..@V"loffl ~0
0
~ 1/ 100
,/ ~QA.ACTIVE REGIO~t:: ALL TYPES
.....
~ ~ o CHARGE
10
3.0 5.0 10 20 30 50
'r...... 100 200 300
20
3.0
I I II II
5.0 7.0 10 20 30
I
50 70 100 200 300
Ie, COLLECTOR CURRENT ImA) Ie. COLLECTOR CURRENT (mA)
,-
t.
__"'t'
-
200 200
..... .......... 'ell" -10 ~
~
.....
>:
'"
... r--. .......
j
~
~
100
~
lell" = 10
.
~
>=
100 ~
lell" 20
t...
.~
::l 70 70
.....
.
:'t
!iil 50 "-
........... "<
le/l" = 20· ~ ~
Q
z:
~
50 .......
........... .....
I
t;; 30
'ell" ~ 10 .......... 4 ~
t;;
lell" = 10 .......... 4 ':::::
..:: ......... ..:: 30 K I'""
..... j
j
20 I ............ 20
LOW GAIN TYPES ........... :""'- >- 4 H GAIN TYPES
----,- TJ ~ 25°C TJ 725°IC
10 I I I 10
10 20 30 50 70 100 200 300 10 20 30 50 70 100 200 300
Ie, COLLECTOR CURRENT (mA) Ie, COlLECTOR CURRENT (mA)
FIGURE 14 - D£LAY AND RISE TIME FIGURE 15 - STORAGE TIME AND FALL
EQUIVALENT TEST CI RCUIT TIME EQUIVALENT TEST CIRCUIT
GENERATOR RISE TIME" 2.0 ns DUTY CYCLE' 2.(1)\ +JOV
l ~r~ ~O:.::.
PH" 200 n. +30 V
DUTY CYCLE = 2.(1)\
200
+16.2 V
.n'"
1.0 k
C>-">NV-...-t---f
lN916
0.5 V OSCI LLOSCOPE SCOPE
Rin> 100 k ohms -13.8 V Rin> 100 k ohms
Cin" 12pF -J.OV Cin" 12pF
RISE TIME" 5.0 ns .. 5001'.--1 RISE TIME" 5.0 ns
2-260
2N2218,A, 2N221 9,A, 2N2221 ,A, 2N2222,A, 2N5581, 2N5582 (continued)
., ~ t-- 20
..... r- ~ ~
f"-. r-- ..... 1"- I' ..... 1"-
..... "'" ~
~
Cob r-- . . .
!E 10
~
rb'Cc f--
§ 7.0 C"-
V 5.0 r--.... ,
V
10 3.0
0.1 0.2 0.5 1.0 2.0 3.0 5.0 10 20 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20
Ie, COLLECTOR CURRENT (mAde) REVERSE VOLTAGE (VOLTS)
2.0
'\. ION- This graph shows the maximum IC-VCE limits of the device
1.0
!12 o. 1
O.5
TO·5
100~~
both from the standpoint of thermal dissipation lat 25 0 C case
temperature), and secondary breakdown. For case temperatures
other than 250 C, the thermal dissipation curve must be modified
1.0 ms
~ in accordance with the derating factor in the Maximum Ratings
II: O.3 r=Tr S table.
I-TO-46
~ 0.2 To avoid possible device failure, the collector load line must
~""::>..
'"' ~
II:
o HTJ=115 0 C fall below the limits indicated by the applicable curve. Thus, for
~ o. 1 I I
Second Breakdown
Pulse Duly Cycl • .;; 10%
li:~ de certain operating conditions the device is thermally limited, and
for others it is limited by secondary breakdown.
8 0.0 1 For pulse applications, the maximum IC-V CE product indicated
- - - - - Bonding Wire limited
~ 0.05 by the dc thermal limits can be exceeded. Pulse thermal limits
- - - - Thermal Umitations@Tc 25°C
0.03 Applicable For Rated SVCEO may be calculated by using the transient thermal resistance curve
of Figure 19.
0.02
2.0 3.0 5.0 1.0 10 20 30 40
1
TO-46
TO·5
PACKAGE ........
~ ....-: :;::::~
~ - .... i-"
9JC(I) = r(t)9JC
5
....... ~
2~ TO·18
0.0 1
10--4
II 10-3 10-1
I, TIME (s)
2-261
2N2224 (SILICON)
CASE 31
(TO·S)
Collector connected to case
MAXIMUM RATINGS
FIGURE 1
470
-""""111--...,..-...,..--1
+12 Ydc 0-......
~1o%---[-
10k
I s.o Ydc
I t
I
I
~W%---F
I
I
I
OY,--_ I
-I 1-1"
L-s.oy -S.OVdc
2-262
2N2224 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 0.1 mAdc, V CE = 10 Vde) 20 -
(IC = 1. 0 mAde, VCE = 10 Vdc) 25 -
(IC = 10 mAde, VCE = 10 Vde) 35 115
(IC = 100 mAde, V CE = 1. 0 Vde) 40 120
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 20 mAde, VCE = 20 Vde, f = 100 MHz) 250 -
(IC = 80 mAde, VCE = '10 Vde, f = 100 MHz) 160 -
Output Capacitance Cob pF
(V CB = 10 Vde, IE = 0) - 8.0
2-263
2N2242 (SILICON)
CASE 22
(TO·1S)
MAXIMUM RATINGS
-IOU 62
1.0k
PULSE WIDTH 96 ns
PRR 120 Hz
2-264
2N2242 (continued)
ON CHARACTERISTICS
DC Current G.in' (1/ hFE -
(IC = 10 mAde, VCE = I. 0 Vdc) 40 120
(IC = 10 mAdc, V CE = I. 0 Vde, TA = _55°C) 20 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 100 mAdc, IB = 10 mAde) - 0.7
(IC = 10 mAde, IB = I. 0 mAde, TA = -55 to +125°C) - 0.3
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 20 mAde, VCE = lq Vdc, f = 100 MHz) 250 -
Output Capacitance Cob pF
(V CB = 10 Vdc, IE = 0, f = I. 0 MHz) - 6.0
2-265
2N2256, 2N2257 (SILICON)
2N2258 {GERMANIUM}
2N2259 (GERMANIUM)
CASE 22
(TO-18)
MAXIMUM RATINGS
2N2256 X X
2N2257 X X
2N2258 X X
2N2259 X X
2-266
2N2256 thru 2N2259 (continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CES Vdc
(IC = 100 /LAde, VBE = 0) 7.0 15 -
Collector-Base Breakdown Voltage BV CBO Vdc
(Ie = 100 /LAde, ~ = 0) 7.0 15 -
Emitter-Base Breakdown Voltage BV EBO Vdc
(~= 100 /LAde, IC = 0) 1.0 - -
Collector Cutoff Current ICBO /LAde
(VCB = 6 Vdc, ~ = 0) - 3.0 10
(V CB = 6 Vdc, ~ = 0, TA = 650 C) - 30 100
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 10 mAde, VCE = 1 Vdc) 2N2256,2N2258 17 30 -
2N2257, 2N2259 40 50 -
(IC = 25 mAde, VCE = 1 Vdc) 2N2256,2N2258 20 35 -
2N2257, 2N2259 40 55 -
Base-Emitter On Voltage VBE(on) Vdc
(Ie = 10 mAde, VCE = 1 Vdc) 2N2256,2N2257 - 0.70 0.8
2N2258, 2N2259 - 0.35 0.5
(IC = 25 mAde, VCE = 1 Vdc) 2N2256,2N2257 - 0.8 0.9
2N2258,2N2259 - 0.45 0.6
Conduction Threshold Base-Emitter Voltage* VT Vdc
(IC = 200 /LAde, VCE = 1 Vdc) 2N2256,2N2257 0.5 - -
2N2258, 2N2259 0.1 - -
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IC = 10 mAde, VCE = 1 Vdc,f = 100 MHz) 2N2258,2N2259 250 320 -
(IC = 10 mAde, VCE = 15Vdc,f = 100MHz) 2N2256,2N2257 250 320 -
Output Capacitance Cob pF
(V CB =5 Vdc, ~ = 0, f = 4 MHz) 2N2256,2N2257 -- 4.0 5.0
Base Resistance
(~ = 5 mAde, VCB = 2 Vdc,
2N2258,2N2259
f = 300 MHz)
.
rb
4.0 8.0
Ohms
2N2256,2N2257 - 50 100
2N2258,2N2259 - 75 125
*Base-to-emitter forward bias voltage at which transistor will be at the threshold of conduction; i. e. that
base-to-emitter voltage at which the collector current is less than or equal to the specified amount
under a given collector-to-emitter voltage condition.
2-267
2N2256 thru 2N2259 (continued)
FIGURE 1 - NPN SWITCHING TIME TEST CIRCUIT FIGURE 2 - PNP SWITCHING TIME TEST CIRCUIT
+3V -3V
1,,1,< I NS t" t, < I NSEC
R, "'_ SOn 1" 5#1 R, '" son
OSCILLOSCOPE OSCILLOSCOPE
< +2V n
OV;u-
-2V
lOOn
GROUNO
, 5.2 K (1, 0.7 NS)
OV.....J L.. : 5.2 K (I, <
0.7 NS)
PLANES
son SOil
GROUND
PLANE
3-150n ,,SOn 3·1501l
RESISTORS -IV RESISTORS
sOn IN A "Y" SOil
IN A "Y"
CONFIGURATION
I K I 0.05#1 CONFIGURATION
I K
-22V
I 0.05#1 I 0.05#1
+22 V
500r---~----~-----'---'--------'----'
TYPICAl CURV[
~ 400r
~
, -===+=-.:.::lIM::::ITc;:C::::.URY,~~I--.-
, ____ +--.._
,---------j-----j
-------------
~
'-'
'"~ 300 ."..'"
~ 250 I-"----+----c~-='""'t-.-J·-t- -------- - - j - - - - - j
12001-/-~'F__V -~I--
~ 150 1--- ------~
~
- - - - LIMIT CURVE .£
10~5----~---1~0------~--2~0--~-3~0--~40--~50- 100L---~----~----~--~--------~--~
5 10 15 20 35 50
Ie, COLLECTOR CURRENT (mA) Ie, COllECTOR CURRENT (mA)
2-268
2N 2273 (GERMANIUM)
2N2273 JAN
MIL-STD-7S0 Limits
Examination or Test Method Symbol Min Max Unit LTPD
SUBGROUP 1
Visual and Mechanical Examination 2071 - - - - 5
SUBGROUP 2
Collector-Base Cutoff Current 3036 I CBO MAdc
(V CB = 12 Vdc, IE = 0) Condition D - 10
Collector- Base Breakdown Voltage 3001 BV CBO Vdc
(IC = 100/.LAdc, IE = 0) Condition D 25 -
Emitter-Base Breakdown Voltage 3026 BV EBO Vdc
(IE = 100 MAdc, IC = 0) Condition D 1.0 -
>- 5
Forward Current Transfer Ratio· 3076 hFE • 75
-
(IC = 1 mAdc, VCE = 10 Vdc) 20
2-269
2N2273 (continued)
MIL-STD-7S0 Umits
Examination or Test Method Symbol Min Max Unit LTPD
SUBGROUP 3
Output Capacitance 3236 Cob pF
(VCB = 10 Vdc, IE = 0, f =1 MHz ) - 3.5
MIL-STO-7S0 Limits
Examination or Test Method Symbol Min Max Unit LTPD
SUBGROUP I
Physical Dimensions 2066 -- - - - 10
SUBGROUP 2
Solderability 2026 - - - -
Temperature Cycling 1051 - - - -
(Thigh = 100~~oC; 10 cycles) Condition B
). 10
Thermal Shock 1056 - - - -
(Glass Strain) Condition A
Mol sture Resistance 1021 - - - -
End POints: (Subgroups 2, 3, 5, 6, 7)
Collector -Base Cutoff Current 3036 ICBO /JAde
(VCB = 12 Vdc, IE = 0) Condition n - 20
2-270
2N2273 (continued)
MIL-STD-7S0 Limits
Examination or Test Method Symbol Min Max Unit LTPD
~
SUBGROUP 3
Shock 2016
Nonoperating
- - - -
(500 G, 1 msec, 5 blows each orientation:
Y1' Y2, Xl and Zl)
Vibration, Variable Frequency
(10 G)
2056 - - - - ~ 10
Constant Accelerating
(10,000 G)
2006 - - - -
End POints: same as Subgroup 2
SUBGROUP 4
Lead Fatigue (Note 1) 2036 -- -- - - 10
Condition E
SUBGROUP 5
High Temperature Operation (Note 2)
- - -
(T A = 70~goC)
SUBGROUP 6
High Temperature Life 1031 - - - - A = 10
(T = 100+5 oC) (Nonoperating)
A -0
End Points: same as Subgroup 2
SUBGROUP 7
Steady State Operation Life 1026 - - - - A= 10
(VCB = 10 Vdc, Pc = 60 mW, TA = 55~goC)
Note 1. Rejects from prior electrical tests from the same lot may be used for this test.
Note 2. Test measurement shall be made after thermal equilibrium has been reached at
the temperature specified.
120
INPUT 1.5- 47 0.47 J.'H T"
1.5-30 "PRIMARY ~ 5~ TURNS, %" LONG
SECONDARY ~ 1~ TURNS
NO. 22 WIRE, 0.0. ~ W
51 5000
2-271
2N2273 (continued)
5 300
Ve.~ -6Vde
r-- t-~ le~-lmAde ,......V /"
0
L~~ooc VV ,,/
5 r\. 0 /"
\ V-V V/ V
\ V-
0
1\ ./
/ TA~25/
/
\
/ I/' ,......
VI-"
5 V-
V TA~/ V-
0
0/
!\. V
./
\
5
V' NORMALIZED AT Ie ~ -I mAde
Ve• ~ -IOVde-
\ j I
0 )0 /
1.0 2.0 5.0 10 20 50 100 200 500 1000 -1.0 -2.0 -3.0 -5.0 -10 -20
f. FREQUENCY ( MH,) Ie. COLLECTOR CURRENT (mAl
CONTOURS OF CURRENT GAIN - BANDWIDTH PRODUCT fr AND n,'C c versus COLLECTOR CURRENT
-20 600 6
\ I
~ !\. \
"IiII
5
\
\\
\
\
\ IT ~ 450 MHz V
"
"t-, Po
I
0
"- 'b'C;
t'--,.
V- --;:
.........
- r-......
.......
I"-
-
0 0
\.. ./ V
II j
1\ / / if
5 0 3
350 MHZ~OO MHz ", V
---
'\ / /' ./
/" 1
VI' ~ 6 Vde
V ~
300jH\ "-
0 2000 20
-2.0 -4.0 -6.0 -8.0 -10 -12 -2.0 -4.0 -6.0 -8.0 -10 -12
Ie. COLLECTOR CURRENT (mAdel Ie. COLLECTOR CURRENT (mAdel
2-272
2N2288,2N2289 (GERMANIUM)
2N2290
40·120 VOLTS
• Alloy·D iffused Epitax ial Construction
70 WATTS
• Low Saturation Voltages-
VCE!sat) ~ 0.5 Vdc (Max) @ IC ~ 5.0 Adc
VBE!sat) ~ 1.0 Vdc (Max) @ IC ~ 5.0 Adc
MAXIMUM RATINGS
TJ,T stg
-0.833
-
70
-
-65 to + 1 1 0 -
Watts
W/oC
°c
1
~
Temperature Range
O ' 0 L050
~ATE ~~
THERMAL CHARACTERISTICS
MAX
Characteristic Max
Thermal Resistance, Junction to Case 1.2 CODE
1550 MAX
083
*Indicates JEDEC Registered Data.
Vertical
0.05
Common
-
1.0
Horizontal
IS
f = 20 Hz
Duty Cycle = 0.5% 10
2-273
2N2288, 2N2289, 2N2290 (continued)
ere = 25"C unless otherwise noted)
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS
*DC Current Gain hFE -
(IC = 2.0 Adc, VCE = 5.0 Vdc) 20 -
(IC = 5.0 Adc, VCE = 2.0 Vdc) 20 60
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 5.0 Adc, IB = 0.5 Adc) - 0.5
* Base-Emitter Saturation Voltage VBE(sat) Vdc
(IC = 5.0 Adc, IB = 0.5 Adc) - 1.0
SMALL·SIGNAL CHARACTERISTICS
'Small-Signal Current Gain
(IC = 0.5 Adc, VCE = 14 Vdc, f = 1. 0 kHz) hfe
25 100
-
(IC = 0.5 Adc, VCE = 6.0 Vdc, f = 30 kHz) 15 -
SWITCHING CHARACTERISTICS
Rise Time t - 5.0 !LS
r
IC = 5. 0 Adc, IB1 = IB2 = 1. 0 Ade)
Storage Time t
s - 7.0 !LS
(See Figure 2)
Fall Time tf - 8.0 !LS
Adjust for
Ie = 5.0 A
Vee = -22 V
+10 V
' - - - - PRF = 60 Hz
. I nput Pulse t r • tf ~ 1 0 ns
2-274
212291, 212292 (GERMANIUM)
212293
10 AMPERE
PNP GERMANIUM POWER SWITCHING
TRANSISTORS
PNP ADE GERMANIUM
POWER TRANSISTORS
· .. designed for fast switching applications requiring low saturation
voltage and excellent collector·emitter sustaining voltage capability. 40·120 VOLTS
70 WATTS
MAXIMUM RATINGS
Rating Svmbol 2N2291 2N2292 2N2293 Unit
*Collector-Emitter Voltage VCEO 30 50 70 Vdc
.Collector-Base Voltage VCS 40 80 120 Vdc
·Emitter-Base Voltage
Ie
-- 1.5
10
-
-
Vd.
Ad.
-Base CUrrent - Continuous IS - 3.0
- Adc
T~ra:~::v,:;;~ong
-Operating and Storage Junction
TC=25"C PD
--=- 70
0.83
-
- Watts
W/"C
TJ.Tstg - -65 to + 1 1 0 - ·C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Max
Thermal Resistance, Junction to Case 1.2
1.171
rnf
-
1.0
IB
1=20Hz
U
Duty Cycle = O.!i'lIi 10
~--+----IJIII-------=-~
Collector Connected to Ceee
2-275
2N2291 thru 2N2293 (continued)
ON CHARACTERISTICS
*DC Current Gain
(IC = 2.0 Adc, VCE = 5.0 Vdc)
hFE
40 -
-
(Ic = 5.0 Adc, VCE = 2.0 Vdc) 50 120
SMALL·SIGNAL CHARACTERISTICS
*Small-Signal Current Gain hfe -
(IC = 0.5 Adc, VCE = 14 Vdc, f = 1. 0 kHz) 50 200
(IC = 0.5 Adc, VCE = 6.0 Vdc, f = 30 kHz) 15 -
SWITCHING CHARACTERISTICS
Rise Time I
r - 7.0 I's
(IC = 5.0 Adc, IB1 = IB2 = 0.5 Adc)
storage Time t
s
- 10 I's
(See Figure 2)
Fall Time If - 8.0 I'S
'IndIcates JEDEC RegIstered Data.
"Motorola guarantees this data in addition to the JEDEC Registered Data Shown.
VC C =-25V
r-"I/X/\r-~
PRF=6QHz
-14 V
Input Pulse MR830
t r. tf ::;;10 ns
2-276
2N2303 (SILICON)
CASE 31(2)
(TO-5)
2-277
2N2322 thru 2N2326 (continued)
ELECTRICAL CHARACTERISTICS (T. = 25'C unl.., otI1erwi.. noted. R.. = 1000 ohm,)
Notes: 1. VRSM and VORM can be applied for aU types on a continuous de ward or reverse blocking capability such that the voltage applied exceeds
basis without incurring damage. the rated blocking voltage.
2. R6K current is not included in measurement.
Thyristor devices shall not have a positive bias applied to the gate concur·
Thyristor devices shall not be tested with a constant current source for for· rently wtth a negative potential applied to the anode.
1 120
~ 110t--~~~~"..t::---t--+---t''t---'1-----i
~120f.:lllli"'-+---
Ii:!
j!!100
~
3Ioo~-+~~~~~~~~a==F~ ~ ~~---+--~~~~~---+--~~~~~~~
!!
j 90 ~60~---+----~~~~--~~--+---~----~
~~40~--~----~~~~~~---P~--~--~
~ 80~--~--~--~--+-~~--+-~~--~ c
i ~
i 70t---t--+-..,.--f--r----/--+--+--"M ~20r----+----t-~~~'~~~~~--~d~C--;
~ ~ i ~'
~~0--~0~.2--~0~.4--~0~.6--~0~.8~-1~.0~~1.2~~1.~4--~1.·6 ~ °0~--~0~.l----~0.2~--~0~.3~~Ot.4~~~0.~5--~0~.6----10.7
IT(AV).AVERAGE FORWARO CURRENT (AMP) IT(AV),AVERAGE FORWARD CURRENT (AMP)
2-278
2N2330 (SILICON)
2N2331
MAXIMUM RATINGS
2N2330 1N2331
Rating Symbol (TO-S) (TO-18) Unit
Collector-Emitter Voltage VCEO 20 20 Vdc
2-279
2N2330, 2N2331 (continued)
(V BC = 2Vdc, VCE = 0, TA = 85 0 C) - 10
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 10 mAdc, VCE = 1 Vdc) 50 -
Offset Voltage mVdc
V(off)
(IB = 200 MAdc, IE = 0) - 0.75
Inverse SatUration Voltage mVdc
VEC(sat)
(IB = 200 MAdc, IE = 50 MAdc) - 3.0
DYNAMIC CHARACTERISTICS
2-280
2N2330, 2N2331 (continued)
z: 1.4
= 500 ~A
~r\.
I, <> T. = 8Soc'I
I, = 200~y V / i
~ 1.2
/ / I~
~
/ ....
V '"
ffi
I,
V
= 100 ~~/ / 1.0
~
>
!:
~V / ,./" 3" 0.8
;:;
,;
o 0.6
20 40 60 100 200 400 600 1000 20 40 60 100 200 400 600 1000
I.. EM IHER CURRENT ("AI I,. BASE ON·DRIVE CURRENT (,.A)
1.4 0.8
I,II, = 0.25
/
-- ~ 0.6
\ 1,=0
T. = 25°C ~ 17
I
T. = 85°C ~ ~
--
1--- '//
....
~
~ 0.4
t;;
tt<>
1'.. "'" ---
~ ....
r- T. = 2SoC
....
--~
-
J 0.2 "- T. = 8SoC
0.6
20 40 60 100 200 400 600 1000 20 40 60 100 200 400 600 1000
I,. BASE ON·DRIVE CURRENT ("AI I,. BASE OFF'()RIVE CURREN' !,.A)
30
- - --
20
r-- t--.
~UIT CjPjCITANiE
J-.-
- 20r-~~~~1-----t---~-----r--~
T. '" 2SoC
...... r-....
--
1
O.S 1.0 I.S 2.0 2.S 3.0 0.1 0.2 0.4 0.6 1.0 4 6 10 20 30
VEC • EMIHER-tOlLECTOR VOLTAGE (mVdcl REVERSE BIAS (VOLTSI
2-281
2N2357 thru 2N2359 (Germanium)
CASE 161
(TO-41)
Collector Connected to Case
MAXIMUM RATINGS
Emitter-Base Voltage
IC
-- 2.5
50
---- Vdc
Adc
-
Derate above 25° C 2.0
Operating and Storage Junction
Temperature Range
T J' Tstg -65 to +110
- °c
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction 8JC 0.5 °C/W
to Case
*
• R3 r/:><---"''VIr--<l......rVY'y"\
Rl '" 1.0 Ohm, 20 Watts R5 IC Adjun @VCE = Vz ,o---.._-'VVv+-l
R2'" 10 Ohms, 2.0 Watts
R3 = 0.1 Ohm, 1.0% 81: Adjust for '8(on) '"
R4 '$ 0.04 Ohm 82'" 2.0 Vdc, Adjust for 'B(off) '" 0.2 Adc
83= 12 Vdc 50W
2-282
2N2357 thru 2N2359 (continued)
ELECTRICAL CHARACTERISTICS (Te = 25"C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CEO Vde
(IC = 100 mAde, IB = 0) 2N2357 30 - -
2N2358 60 - -
2N2359 80 - -
Collector-Emitter Sustaining Voltage (See Figure 1) Vdc
V CE(sus)
(IC = 50 Adc) 2N2357 35 - -
2N2358 40 - -
2N2359 45 - -
Collector -Emitter Cutoff Current ICES mAde
(V CE = 60 Vdc, V BE = 0 2N2357 - - 50
(V CE = 100 Vde, V BE = 0) 2N2358 - - 50
(V CE = 120 Vde, V BE = 0) 2N2359 - - 50
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 20 Adc, VCE = 1. 5 Vdc) 30 - 90
(IC = 50 Adc, VCE = 1. 5 Vdc) 15 - -
SMALL-SIGNAL CHARACTERISTICS
Small-Signal Current Gain
(IC = O. 5 Adc, V CE = 6.0 Vdc, I = 30 kHz)
SWITCHING CHARACTERISTICS
Rise Time I
r
- 12 - liS
(V CC = -28 Vdc,
Storage Time IC = 50 Ade, I - 5.0 - lis
s
IBI = 5.0 Adc, IB2 = 3.0 Adc)
Fall Time (See Figure 3) If - 6.0 - liS
-
20
VCC=28V +15~-1L
10
7.0
t--r-
ISl = ICI10
IS2 = lSI
/' -255:lJ
50iLS I- "I- . .
1-
lOOiLS
.3 Is INPUT PULSE
w 5.0
r- Ir, If';; 10 ns
;x;,
"
>= Vtr
PRF=60Hz
. . . .If1--'
3.0
2.0 - -- ,-
5.0
SCOPE
1.0 MR830
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
I C, COL LECTO R CU RRENT (AMP}
2-283
2N2368 (SILICON)
CASE 22
(TO-IS)
Collador connected to C8sa
MAXIMUM RATINGS
PW'~300 ns .
llV~ + 10V
DUTY CYCLE < 2% ~-
po
2-284
2N2368 (continued)
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Current-Gain- Bar.dwidth Product fT MHz
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) 400 -
Output Capacitance Cob pF
(VCB = 5.0 Vdc, IE = 0, f = 140 kHz) - 4.0
Storage Time (Figure 1) ts ns
(Ic = IBI = 10 mAdc, IB2 = -10 mAdc) - 10
Turn-On Time (Figure 2) ton ns
(IC = 10 mAde, IBI .. 3.0 mAdc, IB2 = -1.5 mAdc) - 12
Turn-Off Time (Figure 2) tofi ns
(IC = 10 mAdc, IBI = 3.0 mAdc, IB2 = -1.5 mAdc) - 15
.
2N2369 (SILICON)
2N3227
-9'1~~---'"
v---:j-t:-:ns
3.3 K
n
• DUTY CYCLE = 2% DUTY CYCLE = 2%
FIGURE 2 - t... CIRCUIT":' 100 mA FIGURE 4 - to" CIRCUIT - 100 mA
+IO.8V +U.4;U_ .
-2V ~ l<
PULSE WIDTH (I,)
Ins
= 300 ns
_1_
,T'
_Jc.,< 12pl
-8.6;~ns
PULSE WIDTH (I,) BETWEEN 10 AND 500~s
-" .....,..., .
_ ":Cs < 12 pI
DUTY CYCLE = 2% OUTY CYCLE = 2%
·Total shunt capacitance of test jig and connecton.
2-286
2N2369, 2N3227 (continued)
ELECTRICAL CHARACTERISTICS
2-287
2N2369, 2N3227 (continued)
100
""'-
- ......
-LIMIT I
- -TYPICAL
'\.
'\.
\. ~. = 10
Vee = 10 V
-
TJ = 25°C-
50 '\. VOl =2V
4
........
r-.... ......... \
\ \
\ "
.;: - h
.-~
COb.
1--
--
i"-.. . .
1-,..1
Cob
II
),
t,(Vee =3V)
\
f\
~
.'" "~r!:-
~ Vee = 10V
......
~
......
t:,...-
"- t-...
'\.
f\.
""
./ t,
,...V ~
1 2
0.1 0,2 0,5 1.0 2.0 5.0 10 1 10 20 50 100
REVERSE BIAS (VOLIS) Ie, COllECTOR CURRENT (mAl
100
/' >\ ~ [/ / V
I
...~
~
'"<.> 50 -
.~ ,...
.,/
/'
L
I
V
C.... COPT
~.
TlME--....
Q..... Vee 10 V
V
,/'
/C., Vee =3 V FIGURE 10 - STORAGE TIME EQUIVALENT TEST CIRCUIT
20
+: -!Jt~
-~ f-
10V ..."""'_......
980
10 -4V
1 10 20 50 100 < 1 ns 500
Ie, COLLECTOR CURRENT (rnA) PULSE WIDTH (tl) = 300 ns
DUTY CYCLE = 2%
• Total shunt capacitance of test jig and connectors.
2-288
2N2369, 2N3227 (continued)
\
i\ \ T, = 2SOC
Ie = 3mA le= 10mA 1\ le=30mA I\,e = so mA Ie = 100 mA
\ \ \
\ ~ \ 1\['..
.... 1'- _ _
1\ \. " "- ........ -... ,...
- -
0.2
...... '" - ~ i'.. r--.....
----
0.02 O.OS 0.1 0.2 O.S 1.0 10 20
I~ BASE CURRENT (mAl
z
~
....
z:
lIi
100
....- ,.......
,...... ....
..-
"""
--- ::::-
~
,.....
T, = 12SoC
T,
T, = 2SoC
7SoC
--- ~
i""'oo..
~
I
trl
I I
7S0~
'"
::>
to
....- ,..... ~ I I I ~ T, 2;OC and
--
'-' -.....:::::: .......
I""'-
......
20 V
I 10 20 so
.......
t--..
100
Ie. COLLECTOR CURRENT (mAl
~
0
1.4
O.S ~
-..;
1 I
Bvc for VeEl...,
I
(25°C TO 121SOCI
f T
-
...c:. ~
co
~
0
:>
1.0 MAXi"y
r:::::T.1
"" g
E-0.5
APPROXIMATE DEViATION
FROM NOMINAl
5SoC TO +25°C 25°C TO 125°C
(,SSOC,TO +TCI
z: 0.8
0 MIN VIEII.fl 0:;
...
t.e +0.15 mV/ot
....OA my/ot
+Q.15mV/OC
(~5S0CITO + J50Cl
tt -1.0 +0.3 mV/OC
~
::> 0.6
~
I I
'-'
~ -1.5 (2S 0C TO 12soCl
'" ~
>
1 0.4 -2.0
~ tJv. torV.,...1
MAX VeE"lfl .... 1--'
0.2
I 10 20 so 100
-2.5
o w ~ ~
I I ~ ~ ~ ro ~ ~ ~
2-289
2N2369A (SILICON)
2N2369A JAN, JTX AVAILABLE
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage V CEO 15 Vdc
FIGURE 1 - ton CIRCUIT -10 rnA FIGURE 2 - toll CIRCUIT -10 rnA
+ 10. 6V n t
3.0V
: +10'75:~-_~
3~OV __ I
2-290
2N2369A (continued)
ELECTRICAL CHARACTERISTICS (T ... = 2S·C un!es5 otherwise noted)
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain*
(IC = 10 mAde, VCE = 1. 0 Vde)
- hFE
. - 120
-
(IC = 10 mAde, V CE = 0,35 Vde) 40 -
(IC = 10 mAde, VCE = 0.35 Vde, TA = _55°C) 20 -
([C = 30 mAde, V CE = 0.4 Vde) 30 -
([C = 100 mAde, VCE = 1. 0 Vde)
Collector-Emitter Saturation Voltage*
(IC = 10 mAde, IB = 1. 0 mAde)
- VCE(sat)
. 20
-
-
0.20
Vde
- VBE(sat)
. -
0,70
0,50
0.85
Vde
DYNAMIC CHARACTERISTICS
Current-G<lin-Bandwidth Product IT MHz
(IC = 10 mAde, VCE = 10 Vde, [ = 100 MHz) 500
Output Capacitance pF
Cob
(V CB = 5,0 Vde, IE = 0, I = 140 kHz) 4.0
Turn-On Time t ns
on
(V CC = 3,0 V, V BE(off) = 1. 5 V, IC = 10 mAde,
IBI = 3.0 mAde, IB2 = 1. 5 mAde) 12
Turn-Off Time ns
toff
(V CC = 3.0 V, [C = 10 mAde, IBI = 3,0 mAde,
IB2 = I. 5 mAde) 18
Stora~e Tin1C' t ns
(IC = 10 mAde, 1m = IB2 = 10 mAde) s
13
2-291
2N2381 (GERMANIUM)
2N2382
PNP germanium epitaxial mesa transistors for high-
speed, high-current switching applications.
CASE 31
(TO-5)
MAXIMUM RATINGS
4 ., 3000
,.
TJ J 25°C g'"
TJ = 25°C
/
~I=IO /'
::>
~
o
~ 1000
I,
./
~ '"~
:i
700
.........
"-""" - ....- ~ ".,.. ~
e1~
<.)
~
g
500
300
/' "'"
....
J ~
100
30 50 70 100 300 500 1.0 3.0 5.0 7.0 10.0 30.0 50.0
Ie. COLLECTOR CURRENT (mAde) I,. BASE CURRENT (mAde)
2-292
2N2381, 2N2382 (Continued)
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
2-293
2N2381, 2N2382 (Continued)
2.5 5
...
:,; 111=111 ...
:,;
...;::
-
4
'"..
le/llo«I ..
...;:: ~
~~
~
~
2.0
~ r--.. '"
~
3
V
,
gj
::;
!o 1.5
I' ~ !1l
.
~
:,;
~
...... --
~
z: 0
z:
.;
~
1.0 o
5 10 20 50 I 2 10
I", BASE CURRENT (mAde) 1,,11.. CIRCUIT DRIVE RATIO
TO SAMPLING SCOPE
Rise Time = t· =. TAffJR = 10 to 90% Rise Time (fig. 5) Scope t,"; 0.7 ns
Fall Time = t, = TAf1CF = 10 to 90% Fall Time (fig. 6) Scope R' N ; " 100 KO
/30 = hFf at Edle of Saturation Scope ~ 3 pf
Ik = Ie in Saturation / In (Base "OFF" Current)
CIN
gj \ Q
~
7
::;
f\ ::; ~
io 1.3 i 0.6
I
'\.
.
~
~
~
./
ii:
"" 1.01.5 5 10
- 20
..: 0 ~~
.02 .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
lIo/fl' flollle
HP 72IA
~ LATCH-UP TEST
TECHTRONIX 541
:::> LOAD LINE
OR EQUIVALENT
~200~----+-----~~~~~--~~----r---~ PULSE GENERATOR
~
HP212A . ._A....::..._....JW.....--1I--I
8100~----+-----~-----f~--~~----r---~
.2
-sLr
O~ __~__~~__~__~~__~__~
o 10 15 20 30
Va, COLLECTOR-I;MITTER VOLTAGE (VOLTS)
2-294
2N2381, 2N2382 (Continued)
~ 1.0 _ 0.8
c
...
~
~ - I I I
TJ = 2SoC ~=10
i
z:
c
0.8 ~ 0.7
i
_I.
TJ = 25°C iJ
5 0.6
:::>
\
I'....... ....... i§ 0.6
5 1/
~
~
,- \ )
III Ie = SOOmA
0.4 ~ 0.5
!:
:E
..
....
'"
c
\ ~
le-Joo~~+ ~
/
f;3 0.2 l:! 0.4
'-
Ie = 100mA
g SOmAl i I III ~io'"
<> Ie 10mA
ril, 1
i 0 I I II .] 0.3
J 0.1 0.3 0.5 0.7 1.0 3.0 S.O 7.0 10 30 50 10 30 50 70 100 300 SOD
I•• SASE CURRENT (mAdc) Ie. COLLECTOR CURRENT (mAdcI
+2.0 2.0
LI volT
~
-
+,=10 Veo TJ= +8S!C
z:
~ +1.0 ~ I-" 1"""'-0 ....
--
Va,,,,, :,.....- ~
i ~ r' - ..! H~C TO ~25OC) ~
1.0
TJ +2SOC
roo..
§i ~ 0.7
,.
--
!--'
--- ---- - 1 V
u <>
(~250C T~ +~
g 0.5 TJ = -5SOC
I
l:! -1.0
...
f--:S ~ !!! ~
~ """Va,...,
~
0.3
~-5S0C TO +2JOC) ./"
~ -2.0 J
-3.0 0.1
50 100 200 300 400 SOO 10 30 50 70 100 300 SOO
Ie. COLLECTOR CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
FIGURE 12 - LEAKAGE CHARACTERISTICS FIGURE 13 - JUNCTION CAPACITANCE
COMMON EMITTER versus REVERSE VOLTAGE
30 15
V TJ +8SoC
/
Vco -,-20V
~I.
TJ +S5OC
I--V, "-
-...........;
rntRESHOLD I - - BI.I LIIIII.I Current. I" Is defined IS
baSI leakage current with both junctions
~
t-VOLTAGEt r--- reverse biased. Ie is always IISS th.n I"
for VIIJofil > Y,. (Vliloflt is off condition
~ r--. C••
2-295
2N2405
For Specifications, See 2N1893 Data.
2N2410 (SILICON)
MAXIMUM RATINGS
2-296
2N2410 (continued)
ON CHARACTERISTICS
DC Current Gain 11)
(Ic = 10 mAde, VCE = 10 Vde) 30 120
(Ie = 150 mAde, VCE = I Vde) 15
(Ie = 150 mAde, VCE = 10 Vde) 30 120
(Ie = 500 mAde, VCE = 10 Vde) 25 100
DYNAMIC CHARACTERISTICS
Current-Gain- Bandwidth Product fT MHz
(IC = 50 mAde, VeE = 10 Vde, f = 100 MHz) 200 -
Output Capacitance Cob pF
(V CB = 10 Vde, IE = 0, f = 1 MHz) - 11
Fall Time tr ns
I (Ie = 150 mAde, Figure 1) - 30
S ------T
INPUT
+4.75 V
INPUT
,----=0-.... ------ +6.50V
.~ RfO%-~
- - -3.50V
-2.75 V 10%--
OUTPUT
--
90%-- -
tOil - t.
-
--
I..
--- ----90%
-~
OUTPUT
t••
+6.5V
OSCILLOSCOPE OSCILLOSCOPE
2500 t. ~ 4ns 1000 t.. ~4ns
AMPLIFIER
GERMANIUM ULTRA-HIGH-FREQUENCY TRANSISTORS
TRANSISTORS
... for very low-noise, high-gain amplifiers, oscillators, mix-
GERMANIUM PNP
ers, and frequency multipliers.
EPITAXIAL MESA
DIFFUSED BASE
• High Maximum Frequency of Oscillation
f~ = 2000 MHz typ
MAXIMUM RATINGS'
Rating Symbol Value Unit
Collector-Emitter Voltage V CEO 10 Vdc
* The maximum rating is that value above which device operation may be impaired TO-12 PACKAGE
from the viewpoint of life or performance.
CASE 20
2-298
2N2415, 2N2416 (continued)
"Ade
Emitter Cutoff Current
(V BE = 0.3 Vde, IC = 0)
~BO - - 100
ON CHARACTERISTICS
DC Current Gain
(IC = 2.0 mAde, VCE = 6.0 Vde) 2N2415
2N2416
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product IT MHz
(IC = 2.0 mAde, VCE = 6.0 Vde, 1= 200 MHz) 2N2415 500 - -
2N2416 400 - -
Output Capacitance Cob pF
(VCB =6.0Vde, IE=O, 1=1.0MHz) - 0.9 2.0
FUNCTIONAL TESTS
Maximum Available Gain#
(VCB = 6.0 Vde, IE =2.0 mAde, 1= 500 MHz) 2N2415
2N2416
(1) Pulse Test: Pulse Width ~ 300 ps, Duty Cycle:: 2.0%.
** Direct Collector-Emitter header capacitance balanced out to give true device capability.
MAG calculated from f max as determineri from actual amplifier circuits.
-- -
50
12
OJ
~
z 40 r-.... 10
;;: lil
'"~., :s
....
:3 30 '"
8.0 co
:::>
..:
--
~
c< ....
_MAG '"z
,.
d
c<
.....
6.0 0
..:
20 z
1/ 4.0
NF
.....
10
2.0
.......:
.......:
.......: o
10 50 100 500 1000 2000
f, FREQUENCY (MHzi
2-299
2N2453 (SILICON)
2N2453A
Case 654-04
Pin Connections, Bottom View
TO-78
All Leads Electrically Isolated from Case
2-300
2N2453, 2N2453A (continued)
Noise Figure NF dB
(IC = 10 /lAde, V CE = 5.0 Vde, ~ = 10 k ohms, I = 1. 0 kHz) - 7.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio**
(IC = 100 /lAde, VCE = 5.0 Vde) 2N2453A
hFE/hFE2**
0.90 1.0
-
(IC = 1. 0 mAde, V CE = 5.0 Vde) 0.90 1.0
(IC = 1. 0 mAde, VCE = 5.0 Vde, TA = _55°C to +125°C) 0.85 1.0
2-301
2N2476 (SILICON)
2N2477
CASE 31
(TO-5)
400 V of<
o PW >150 ns
out -..I2ns
D.C. < 210
: (max)
I
Vin 10000 I
6.4Vl:£j-----l-
I V
Z=500
500 l 90/0-: out
I-t~
on
2-302
2N2476, 2N2477 (continued)
ELECTRICAL CHARACTERISTICS (f. ~ 2S'C "nlos. oth.",;•• noted)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (11 BV CEO Vde
(IC = 50 mAde, IB = 0) 20 -
Collector-Base Breakdown Voltage BV cBO val:
(Ic = 10 uAde, IE = 0) 60 -
Emitter-Base Breakdown Voltage BVEBO Vde
(~ ~ 100 uAdc, IC = 0) 5.0 -
Collector Cutoff Current ICBO "Adc
(V CB = 30 Vdc, IE = 0) - 0.2
(V CB = 30 Vdc, IE = 0, T A = 150°C) - 200
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 150 mAde, V CE = O. 4 Vde) 2N2476 20 -
2N2477 40 -
Collector-Emitter Saturation Voltage Vde
VCE(sat)
(IC = 150 mAde. IB = 7.5 mAde) 2N2476 - 0.4
(IC = 150 mAde. IB = 3.75 mAde) 2N2477 - 0.4
(IC = 500 mAde, IB = .50 mAde) 2N2476 - 0.75
2N2477 - 0.65
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product IT MHz
(IC ~ 50 mAde, V CE = 10 Vde, I = 100 MHz) 250 -
Output Capacitance Cob pF
(V CB = 10 Vde, ~ = 0, 1= 140 kHz) - 10
111 Pulse Test: pulse width ~ 400 IlS. duty cycle ~ 3%.
FIGURE 2 - TURN·OFF TIME TEST CIRCUIT
VCC=6.4V PW >150 ns
D.C. < 2/.
17.7V
*
1000
n
2-303
2N2480,A
2N2481 (SILICON)
2N2481 JAN,JTXAVAILABLE
"
CASE 22
(TO-IS)
MAXIMUM RATINGS
2-304
2N2481 (Continued)
Input Capacitance C ib pF
(V EB = 0.5 V, f = 1 MHz) --- 7.0
Storage Time ts ns
(Ie = 10 rnA, IB1 = 10 rnA, IB2 = 10 rnA) --- 20
2-305
2N2481 (Continued)
8
le'= 10 mAe le~20mAde le~50mAde , Ie ~ 100 mAde
6
\ \
\ \
4 \ \ \, .........
r-..... i-,...
- -
......... "-..
"- 1'-"-
i"- r--_ r---
O. 2
0.2 0.3 O.S 0.7 1.0 2.0 3.0 S.O 7.0 10 20
I" BASE CURRENT (mAl
-----
70
-r---r--------
- r-- -- Ve,~ I Vde
--
TJ 12S'C
50
---
~
~ TJ 7S'C -I"---
z ~
,- TJ 2S'C r-..
~ 30 ~
is
~
i
iii:
iii
1
20 ---""'"'r-
~
V
~
L.---:"
~
-----
----
ITJ
TJ - -S5'C
l5'C
I
- r-- -
-r--- r-
r- ....... ......
r-. ['-......
r-.r-.
r-.r-.
~~
r--....
.........
~
0 ~
r-.r-.
r-......
........
I'-....
r.....
7.0 ......
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (mAl
4 Ii ...
./
/
5~
8v.forV8EI ..t,
-2 .0
.2 MAXVCEI ••tl
0 I I -2. 5
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 o ~ ~ ~ ~ ~ rn ~ ~ ~ ~
2:-306
2N2481 (Continued)
50
f-
t.@vcc -3 vdc
'!:'of ~ "-
10
I
........ ......... .... t. 20 ~
i~
~ 1= 1= t.@V •• 2Vdc ~~
5.0 0
i;"'"
2.0 II LJ h@V"IO 10 r,..:..;:: ~ 5.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.n 10 20 30 50 70 100 200
Ie. COlLECTOR CURRENT {mAl Ie. COllECTOR CURRENT !mAl
o, ~ .... " ~
,~ ..... r- PF=2O
]~ I~ r--
I- - - 1-
0
""""" I'
I.....
-
PF=IO
0- PF 20 'Il1o,
20
--
~ ~
7.0 I\. ~ ~
..... 0
5.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
5.0
1.0 2.0 30 5.0 7.0 10 20 30
"""'--50 70 100 200
7.0
r- -- .... -~
II --TYPICAL 700 ~PFIO
500
r
r
Tr 2S"C
TJ=I25"C
L
-
~
;;::
'"
~
='
5.0
t- I- '- -I..l
~
r-If.
~.... ~
fI'o ~
........ i""'-:-.,
~200
~
300
r-
::;~i"""
~
'7
~d Yce= 10Vdc ;I
I c".-J;
'
1''''''.
100
70
3.0 50
30
f-- r- r Vi-liOn 0... ,
Vcc=3Ydc
2.0 20
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
2-307
2N2490 thru 2N2493 (GERMANIUM)
MAXIMUM RATINGS
Rating Symbol 212490 212491 212492 212493 Unit
Collector-Base Voltage VCB 70 60 80 100 Volts
C6llector"Emltter Voltage VCES 60 50 70 85 Volts
Emitter-Base Voltage VEB 40 30 60 80 Volts
Collector Current IC 15 Amp
Power Dissipation at TC = 25v C PD 170 watts
Junction Temperatu't"e Range TJ -65 to +110 °c
ELECTRICAL CHARACTERISTICS (Tc = 2S·C unless otherwise noted)
Characteristic Symbol MI. MI! Unit
Collector - Base Culoff Current ICBO mAdc
(VCB = -2 Vdc) - 0.2
2-308
2N2501 (SILICON)
NPN silicon annular transistor for high- speed switch-
ing applications.
CASE 22
(TO·18)
MAXIMUM RATINGS
250 2.4
Vel - I volt
2.2
~ 2.0
I II
200 z
~ lllJ
/. ~
~ 1.8 T,
--
P, = 10
u ~
& ISO
1.6
§ 1.4
I-"" T, =+100 f"".
~ T'=IO~V ...g 1.2
./ io"" ~
...~ ~
~'=250C f-
~ T,= +25
c5 100 ~ 1.0
~ 0.8
./ ...... l II
'"
"""
iii
...
0
~
...~
50
l# :::E
~
z
j
0.6
0.4
i,....o-~
.....
T~
III
I I 55 0 .C
- ~~ I..-
I II -1
0.2
.$ I-" o
0.1 I 10 100
0.2 I 10 Ie. COllECTOR CURRENT ImAde)
I.. BASE CURRENT (mAde)
2-309
2N2501 (Continued)
...:=""
;j
...
0
0.3
" r.- 'i+
Ic= SOmA
j Ie = lOrnA
0.2
0.1
---
0.01 0.1 10 100
I.. BASE CURRENT (mAde)
2-310
2N2501 (Continued)
BASE·EMITTER VOLTAGE
versus COLLECTOR CURRENT TEMPERATURE COEFFICIENTS
2.0 1.0
Ill~/I, =
I
10
I
~ 0.5
-l t
in
~ 1.6
~
> 9w:I2J to 100°C) ~~
... T, = 25°C
lell, = 10
g
isc:;
'"~ 1.2
0 -VICE 1"'1
0 Bvcl 55 12iW!
> it
...'" .... ~ ""-0.5
I
1~:tI~IIIIIIIIII~11111 im
1= 1IIIll
:iii
.....,.l\!
0.8
-'"
CD
J 0.4
0
10 100 0.2 1 10 50 100
Ie. COLLECTOR CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
COMMON EMITTER DC
ACTIVE REGION TIME CONSTANT L.EAKAGE CHARACTERISTICS
Vee - +20 V
10.0
7.0
~~~ = 115VI I 5.0
T, =1 1500C
g 6.0
... I
...
!ii 1.0
j T, 100oC_ -
~ 5.0 '"
i:l 0.5
•ri VOLT~E
z
o
~
~ 4.0 .-- V,. THRESHOLD
::;;
;:::
is 3.0 \ ~
~ 0.05
0.1
~ Vee=3V
I \ I
~ 2.0 ~0.01 T, 2Lc
ti ~
~ 1.0
ir--.. 0.005
o
+0.5
! 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
0.1 1.0 10 100 200
Ie. COLLECTOR CURRENT (mAde) VOl. BASE-EMITTER REVERSE BIAS (VOLTS)
2.0
;:. ~ ... i""""
.'
1\ ~I'
.
J 1.1
~ \ /
i 1.6
\ II
0
~ \ ~
!... \ .J
~ \.4
'\
...:E ~
~
.~ ./
.!il
iii
1.2
......... i'-o.. I-'"
r-
1.0 o ~~
\ 10 20 .02 .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
/Jo/fJc
2-311
2N2526 (GERMANIUM) PNIP germanium power transistors for high-voltage
2N2527 power switching applications.
0
Sm. 1m. 500 .. ~ .. 0
0
5.1. 1~' sdo,..' 12S0~' I
20
0
5 ... 1m. 500 .. 1 ~
~ .... 1=1=
50p.s __: : E E
100..
ORLes;'= FF
5
4
3
....... , .'\
OR lESS ~ 4
5
3 , I'
t-t- 5
4
3 M. I..:l.
OR lESS
2
\ r--... I'\. ,\.'l\
! 2 I" r-. ~~1 2 I\.' L"- ~II..\
r-.,:::: .........
t:"h ~ ~
T
~ ~ r-. i\ ,,~
1 I\.
I 1 1
,
.5 ~ o. 5 .5
",
.4f-- ~d' .4
.3 ~ g.4
.3 .3
L ~
.2
.1
8S-WAn
POWER DISSIPATION AT
25°C CASE TEMPERATURE
"-
"-
u 0.2
.1
IS-WATT
POWER DISSIPATION AT
250 & CASE TEMPERATURt.
i' " 2
.1
15-WATI
E~!ll~2~rfr~~~rJRE
'~
de
.OS .OS de .os
.04 .04 .D4
.0 3 .03 .03
.02 .02 .0 2
\
.01 1 .0 1
o ~ ~ ~ ~ ~ H ro 10 ~ .0 0 10 20 30 ~ SO H ro 80 ~ 100 110120130 o ao ~ 10 10 100 120 l~ 1H lID
COLLtCTOll.£MlmR VOlTAGE MIlTS) COliECTOll.£MmER VOlTAGE ('101 TSI COLlECTOR-EMInER VOLT_ tyOLTS)
The Safe Operating Area Curves indicate I c - (Duty cycle of the excursions make no significant
VCE limits below which the device will not go into change in these safe areas.) To insure operation
secondary breakdown. Collector load lines for spe- below the maximum Tl, the power-temperature
cific circuits must fall within the applicable Safe derating curve must be observed for both steady
Area to avoid causing a collector-emitter short. state and pulse P9wer conditions.
2-312
2N2526 thru 2N2528 (continued)
ELECTRICAL CHARACTERISTICS (T c = 25"C unless otherwise noted)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 3.0 Adc, VCE = 2.0 Vdc) 20 - 50
DYNAMIC CHARACTERISTICS
Small-Signal Current Gain hfe -
(IC = O. 5 Adc, VCE = 12 Vdc, f = 30 kHz) 10 15 -
Rise Time t
r
- 5. 5 - IlS
Storage Time t
s
- 1.2 - IlS
*To avoid excessive heating of collector junction, perform this test with a sweep method.
TYPlCAL INPUT CHARACTERISTICS
COLLECTOR CURRENT ,ersus BASE CURIIENT ALL TYPES COLLECTOR CURRENT ,ersus DRIVE VOLTAGE
IOr---~---r---r---'----'---'---, IOr-----r----r----rr--,-,-~_,r_--·
i 8
re 4 1-----t-----I7''I--t----+----I----;
~.2 2 ~---+-_++.I----+----+---___1f----1
100 200 300 400 soo 600 700 o 0.5 1.0 1.5
I" BASE CURRENT (mAl V", BASE·EMITTER VOLTAGE (VOLTSI
2-313
2N2526 thru 2N2528 (continued)
40 1---1t-+.......---t-----I----i-------I----J
MERCURY
SWITCH 0.5 /IF'
40
10
+25°C
-r-._-L+IOOOC
10 I---,.----t-----I---i-------I-.:..::.:.~
50
4V 10
+ Ie, COLLECTOR CURRENT (AMPERES)
2-314
2N2537 thru 2N2540 (SILICON)
"
CASE 22
(TO-18)
2N2539
2N2540
CASE 31
(TO-5)
2N2537
2N2538
switching.
MAXIMUM RATINGS
2N2S37 2N2539
Rating Symbol 2N2S38 2N2540 Unit
(TO·S) (TO·18)
Collector-Base Voltage V'CB 60 60 Vdc
TOTAL CONTROL CHARGE TEST CIRCUIT ACTIVE REGION TIME CONSTANT TEST CIRCUIT
+8.3V +15.2 Vdc +8.3V +15.2 Vdc - - - GRouND PLANES
JL
PULSE AT "A"
100
TO OSCILLOSCOPE
RISE TIME ,of 5 ns
Z;"= 10Mn
JL INPUT
100 I
Ilk
+-......""'-......- -...
SIGNAL
, YOUT
TO OSCILLOSCOPE
RISE TIME ,of 5 ns
100 INPUT TRANSITION. Z;" = 10Mn
INPUT'
TIME ,of 2 ns _
IMPEDANCE = san
_.--'lli'-+-{
1510
, 50
OUTPUT
100 50 I
~l'
D% 50mVma,
'ADJUST INPUT FOR a TO +8.3V R=~o In( ~o )
PULSE AT POINT "A"
TRANSITION TIME ,of 2 ns
90% rr: ~
10 ns max
F=.!};:,
~c
In(l+~)
IJc
T .. = I•• t,
~o ::::: hFE at Edle of Saturation
Output Waveform I" /Jc = Ie in Saturation / 111 (Base "OFF" Currlnt)
/JF = Ie In Saturation / 1'1 (BaSI "ON" Current)
2-315
2N2537 thru 2N2540 (continued)
Storage Time TS ns
(Ie = IBI = IS2 : 20 mAde, VCC = 5V) 20
Aetive Region Time Constant TA 2.0 ns
Turn-on Time ns
ton
(lSI = IS2 = 15 mAde, Ie = 150 mAde, 40
VCC = 7 Vde, RL = 40 n)
Turn-off Time toff ns
(ISI = IB2 = 15 mAde, Ie = 150 mAde, 40
VCC = 7 Vde, RL = 40 $1)
2-316
2N2552 thru 2N2559
For Specifications, See 2N1038 Data.
CASE 61 CASE 54
(TO-41) (TO-3 Modified)
For units with pins (TO-3 Modified) specify devices MCR649AP-l(2N2573) thru MCR649AP-.](2N2579).
2-317
2N2573 thru 2N2579 (continued)
Holding Current IH mA
(Anode Voltage = 7 Vdc, Gate Open) - 20 -
Turn-On Time (td + t r ) tgt /LS
(IGF 50 mA, IT = lOA) - 1.0 -
Turn-Off Time tq /LS
(IT = 10 A, IR = 10 A, dvldt = 20 VI/Ls, T J = l25 0 C) - 30 -
(VDRM = rated voltage)
2-318
MAXIMUM ALLOWABLE
2N2573 thru 2N2579 (continued) FORWARD GATE
~~~R:~~MP GATE TRIGGER CHARACTERISTICS
2.0
3.SVOLTS~
MINIMUM
1.0 GATE VOLTAGE
MAXIMUM ALLOWABLE NON-RECURRENT REQUIRED TO TRIGGE I
SURGE CURRENT >~UNITS
~cCu I
0::- !«:J ~ I
!
0::- 300
~
=-
~5 AMJ R~S
+
J '"
:':
....
ffi
ffi '" -
g~ +
~Z 0
I
I
AS A TRIGGER CIRCUIT DESIGN CRITERIA
ALL UNITS WILL TRIGGER AT ANY VOLTAGE
AND CURRENT WITHIN THIS AREA
i
_ 250
To 6S TO 12S"C
'"
'"
13
0.2
;!~ ~
~~ ~f< il
I
~
::>
<.)
w
<0 I 40 mA MINIMUM
GATECURRENT REQUIRED
~ ............ .... 0.1
!S ~ ..." I TO TRIGGER ALL UNITS
~~ ........ r- '""'t;; ~\J I (12S"C-2smA)
200 I (-65°C - 80 mAl
L __________ _
~ r-......
.OS
"'
~ TYPICAL
"'~ 150
....... TRIGGER
POINT
~
:z::
.02
~ 100
1 4 10 20 40 60 3 4 S 6 7 10
CYCLES AT 60 Hz 0.3 VGT. GATE VOLTAGE (VOLTS)
(T, =
2SoC -ANODE @ 6 VOLTS)
120
50 / /'
115 ./ /
0° I 180° "-
r 110 I---~~~~-~ONDUCTI~?-
:E
:$
.... 20 -TYPICAL " ;?
MAXIMUM-
~ ANGLE
::>10S ~--~~~~~~~--t---~---~
~
~
::>
<.)
10
\! P
~ 100 ~
5.0
~ ~
~ 95 ~
'"
::>
2.0
II I - - - T, 125°C_=
~ 90 :il
z II 1/ --T,=2SoC
;." i
85 z 1.0
~
80 ;'!;
0.5
.f
75
70 0.2
I 'I
I
6S 0.1 I :I
o 10 15 20 2S 0.0 0.5 1.0 1.5 2.0 2.5
IT(AV). AVERAGE FORWARD CURRENT (AMP) VT.INSTANTANEOUS FORWARD ON VOLTAGE (VOLTS)
22
ON THE MS·10 HEAT SINK
USING DC4* AND FREE
CONVECTION COOLING
I--
r--
/ 5
~
20
"
ASSUM ING MAX IMUM FORWARD
DROP AND 8,c l.S"C/W,
=
=
= r--
""
8cs 0.2"C/W AND 80. 3.0"C/W
z 18
0
/ CURVE DEFINES TEMP. RISE
OF JUNCTION ABOVE CASE E 16
I
FOR SINGLE LOAO PULSE OF
DURATION t.
PEAK ALLOWABLE DISSIPATION
IN RECTIFIER FOR TIME t
~
0
'"
~
~
14
12 """- I"-
V EQUALS 12S"C (MAX. To) 10
"
MINUS MEASURED CASE TEMP., .f
DIVIDED BY THE TRANSIENT
THERMAL RESISTANCE.
\..
u
.. D.2
/ I p _ TJ(mu)-T c _
r- *DC4 IS DOW CORNING NO.4
SILICONE LUBRICANT
~
.,/ "'- ~
p. . k - (jJC
~ I I I
0.0
.001 .002 .OOS .01 .02 .OS 0.1 0.2 O.S 1.0 10 20 30 40 SO 60 70 80 90 100 110 120 130
t, TIME (s) TAo AMBIENT TEMPERATURE (OC)
2-319
2N2635 (GERMANIUM)
CASE 22
(TO·18)
SCOPE
I,,,;; 3.5ns
R,• i!o 100Kn
INPUT WAVEFORM:
I, = I,";; Ins
PW i!o 0.5,..5
+1.25Vlj
0- - - C,,.;; 6 pF
(includes C,.)
C,.";; 3 pF
2-320
2N2635 (Continued)
2-321
2N2639 thru 2N2644 (SILICON)
One Both
Side Sides
Total Device Dissipation @ TA = 25°C PD 300 600 mW
Derate above 25°C 1. 72 3.43 mWjOC
2-322
2N2639 thru 2N2644 (continued)
ON CHARACTERISTICS
DC Current Gain ( 11 hFE -
(IC = 10 ;tAde, VCE = 5 Vde) 2N2639, 2N2640, 2N2641 50 300
2N2642, 2N2643, 2N2644 100 300
SMAll·SIGNAl CHARACTERISTICS
Current-Gain - Bandwidth Product IT MHz
(lC = I mAde, VCE = 5 Vdc, I =20 MHz) 35 -
Output Capacitance Cob pF
(V CB - 5 Vde, IE - 0, I =I MHz) - 8,0
Noise Figure NF dB
(IC = 10 ;tAde, VCB Vde, =5
RS = 10k ohms, Bandwidth = 10 Hz to 15 kHz) - 4.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio ••
(IC - 10 ;tAde, VCE = 5 Vde) 2N2639, 2N2642
hFEI/hFE2**
0.9 1.0
-
2N2640, 2N2643 0.8 1.0
2-323
2N2646 (SILICON)
2N2647
CASE 22A
(TO-18 Modified)
(Lead 3 connected to case)
* Derate 3.0 mW/oC increase in ambient temperature. The total power dissipation
(available power to Emitter and Base-Two) must be limited by the external
circuitry.
** Capacitor discharge - 10 JJ.F or less, 30 volts or less.
2-324
2N2646, 2N2647 (continued)
--
(Note 3, Figure 3) 2N2648 3.0 5.0
2N2647 6.0 7.0
NOTES
1. Intrinsic standoff ratio, 2. Use pulse techniques: PW = 300 p.s duty cycle ";;2% to avoid
'I.is defined by equation: internal heating due to interbase modulation which may result in
erroneous readings.
'I=~)
Vln ,
Where Vp = Peak Point Emilter Voltage 3. Base·One Peak Pulse Voltage is measured in circuit of Figure 3.
V828 , = Interbase Voltage This specification is used to ensure minimum pulse amplitude for
VIE8,I = Emilter to Base·One Junction Diode Drop applications in SCR firing circuits and other types of pulse circuits.
(=0.5 V @ lO pAl
FIGURE 1- UNIJUNCTION TRANSISTOR SYMBOL FIGURE 2- STATIC EMITTER CHARACTERISTIC FIGURE 3- YOII TEST CIRCUIT
AND NOMENCLATURE CURVES (Typical Relaxation Oscillator)
(Exauara'eeI to Show Details)
- I"
CUTOfF
REGION
v,
NEGATIVE
RESISTANCE" SATURATION
REGION
I
I ~PEAK POINT I
i
REGION
R, R"
V,
+ 20V
-
IOkll 100 {l
I, I
I
: EMITTER TO
BASE·l
: CHARACTERISTIC
1
v,
VEI!!.atl
Vv
+----
t -----
-J--- , •
, VALLEY POINT \
-tJl---
YOI '
I
I
I
I
t
I I
j I
- -t~~-------7lv----~~ ~
lEO
2-325
2N2652 (SILICON)
2N2652A
2-326
2N2652, 2N2652A (continued)
SMALL·SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 50 mAdc, VCE =10 Vdc, f =20 MHz) 60 -
Output Capacitance pF'
Cob
(V CB =10 Vdc, IE =0, f =1. 0 MHz) - 15
Input Capacitance C ib pF
(V BE = 0, O. 5 Vde, IC = 0, f = 1. 0 MHz) - 85
Noise Figure NF dB
(IC =O. 3 mAdc, V CE =10 Vdc, ~ =510 ohms, B. W. = 1.0 Hz,
f =1. 0 kHz) 8.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio** hFE/hFE2" -
(IC = 100 /lAde, V CE = 5.0 Vdc) 2N2652 0.85 1.0
2N2652A 0.9 1.0
(IC = 1. 0 mAdc, V CE =5.0 Vdc) 2N2652 0.85 1.0
2N2652A Q.9 1.0
Base Voltage Differential IVBE1-VBE21 mVdc
(IC = 100 /lAdc, VCE =5.0 Vdc) - 3.0
(IC = 1. 0 mAde, VCE =5.0 Vdc) - 3.0
t1l Pulse Test: Pulse WIdth ~ 300 /lS, Duty Cycle ~ 2.0%.
** The lowest of the two hFE readings is taken as hFEl f~r the purpose of measurement.
2-327
2N2696 (SILICON)
2N2927
MAXIMUM RATINGS
Rating Symbol 2N2696 2N2927 Unit
2N2696
I 2N2927
Collector-Emitter Voltage VeEO 25 Vde
Collector-Sase Voltage VeB 25 Vde
Emitter-Base Voltage VEB 4.0 Vde
2N2696 2N2927
Collector Current -'Continuous Ie 500 mAde
T- ~
Total Device Dissipation@TA = 25°C Po 0.36 0.8 Watts
l"'" r
0.335 DIA
0.370
nJ
i -1". " . -hli
h
Derate above 25°C 2.06 4_56 mW/oe 0.305 DIA 0.240
1llI"1 ~
0.335 • I 0.260
Total Device Dissipation @Te= 25°C Po 1.2 3.0 Watts
Derate above 25°C 6.85 17.1 mW/oe
Operating and Storage Junction TJ,Tstg -65 to +200 °e
Temperature Range
0.019
H~j
MIN
VBB +4.0 V
0.100
330
TO OSCI LLOSCOPE
T
D.OZ8
INPUTl>100 kOHMS [041
0:LJ 1.0f-_...._-A,J14V0Ir-_t-i
tr<1.0 ns
2-328
2N2696, 2N2927 (continued)
ON CH..,.R,ACTERISTICS
,.
DC Curient Gain hFE -
(lC ='50 mAde, VCE = 1.0 Vdc) 30 130
(lC = 50 mAde, VCE = 1.0 Vdc, TA = -550 C) 12 -
(lC = 300 mAde, VCE = 2.0 Vde)(I) 20 -
Collector-Emitter Saturation Voltage VCE(sa!) Vdc
(lC = 50 mAdc,lB = 2.5 mAde) - 0.25
(lC = 300 mAde,lB = 30 mAde) - 1.0
Base-Emitter Saturation Voltage VBE(sat) Vde
(lC = 50 mAde, I B = 2.5 mAde) - 1.1
(lC = 300 mAde, IB = 30 mAde) - 2.0
Base-Emitter On Voltage VBE(on) - 1.0 Vdc
(lC = 50 mAde, VCE = 1.0 Vde) 2N2927
SMALL-SIGNAL CHARACTERISTICS
Output Capacitance Cob - 20 pF
(VCB = 10 Vde, IE = 0, f = 140 kHz)
Input Impedance hie - 1500 ohms
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Voltage Feedback Ratio hre - 26 X 10-4
(lC = 10 mAde, VCE = 10 Vdc, f = 1.0 kHz)
Small-Signal Current Gain hfe -
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz) 25 180
(lC = 50 mAde, VCE = 3.0 Vde, f = 100 MHz) 1.0 -
Output Admittance hoe - 1200 "mhos
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
(VCC = 10 Vdc,l C ",,300 mAde, IB1""3O mAde)
Turn-On Time
(See Figure 1)
ton - 75 ns
2-329
2N2710 (SILICON)
CASE 22
(TO·18)
MAXIMUM RATINGS
980
+6.0VlJ 500
OSCILLOSCOPE
INPUT~
~
10Mn
1.5pF
tr = t, ~ 0.4ns
-4.0 V
I" I, ~ 0.5 ns
Zi' ~ 50 ohms
2-330
2N2710 (continued)
ON CHARACTERISTICS
DC Corrent Gain hFE -
(IC = 10 mAde, VCE = 1. 0 Vde) 40 -
(IC = 50 mAde, VCE = 1. 0 Vde) 40 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 10 mAde, IB = 1. 0 mAde) - 0.25
(IC = 50 mAde, IB = 5.0 mAde) - 0.4
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 10 mAde, VCE = 20 Vde, f = 100 MHz) 500 -
Output CapaCitance Cob pF
(V CB = 10 Vde, ~ = 0, f = 4.0 MHz) - 4.0
-2.0 V
+n7 0V
.
2.0 k
270
OSCILLOSCOPE
INPUT~
t,~ t,~
IOMn
2.6 pF
0.4"s
tr• t, ~ 0.5 ns
Z;,~ 50 ohms
2-331
2N2720 (SILICON)
2N2721
~@~
Case 654-04
TO-78
MAXIM UM RATI NGS (each side) (TA = 25°C unless otherwise noted)
2-332
2N2720, 2N2721 (continued)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage' (1) BV CEO Vdc
(IC = 10 mAde, IB = 0) 60 -
Collector Cutoff Current ICEO nAdc
(V CE =5.0Vdc, IB =0) - 10
nAde
Emitter Cutoff Current
~BO
(V EB = 5.0 Vde, IC = 0) - 10
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 100 IlAdc, VCE = 5.0 Vde) 30 120
(IC = 1. 0 mAde, VCE = 5.0 Vdc) 35 -
(IC = 10 mAdc, VCE = 5.0 Vdc) 42 -
Collector-Emitter Saturation Voltage Vde
V CE(sat)
(IC = 10 mAde, IB = 1. 0 mAde) - 1.0
SMALL·SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 10 mAde, VCE = 10 Vdc, f = 20 MHz) 80 -
Output Capacitance Cob pF
(V CB = 5.0 Vde, ~ = 0, f = 1. 0 MHz) - 6.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio** hFE/hFE2** -
(IC = 100 IlAde, VCE = 5.0 Vde) 2N2720 0.9 1.0
2N2721 0.8 1.0
Base Voltage Differential
(IC = 100 IlAdc, VCE = 5.0 Vdc) 2N2720
Iv BE1- V BE21
- 5.0
mVde
2N2721 - 10
Base Voltage Differential Gradient l>(V BE1- V BE2) mV
(IC = 100 IlAde, VCE = 5. 0 Vde, T A = -55 to +25' C) 2N2720 - 0.8
2N2721 - 1.6
(IC = 100 IlAde, V CE = 5.0 Vde, TA = +25 to +125'C) 2N2720 - 1.0
2N2721 - 2.0
2-333
2N2722 (SILICON)
Case 654·04
~PN
TO·78
NPN'<;[J
PINS 4 AND 8 OMITTED
Pin Connections Bottom View
All leads Electrically Isolated from Case
2-334
2N2722 (continued)
ELECTRICAL CHARACTERISTICS (each side) (TA = 25'0 unl.ss oth• .wi,. noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage III BV CEO Vde
(IC = 10 mAde, IB = 0) 45 -
Collector-Base Breakdown Voltage BV CBO Vde
(IC = 10 /LAde, IE = 0) 45 -
Collector Cutoff Current ICEO nAde
(V CE =5.0Vde, IB =0) - 2.0
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 1. 0 /LAde, VCE = 5.0 Vde) 50 250
(IC = 10 /LAde, VCE = 5.0 Vde) 100 -
(IC = O. 1 mAde, VCE = 5.0 Vde) 125 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 10 mAde, IB = 0.5 mAde) - 1.0
Noise Figure NF dB
(IC = 10 /LAde, VCE = 5.0 Vdc, RG = 10 k ohms,
f = 10 Hz to 15.7 kHz) - 4.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio** hFEl/hFE2** -
(IC = 1. 0 /LAde, VCE = 5.0 Vde) 0.9 1.0
111 Pulse Test: PUlse Width = 300 I-'S, Duty Cycle" 2.0% .
•* The lower of the two hFE readings is taken as hFEI for the purpose of measurement.
2-335
2N2723 thru 2N2725 (SILICON)
CASE 20(8)
(TO-72) Two NPN silicon annular transistors connected as a
darlington amplifier, and designed for applications re-
quiring very high gain.
EZ c
2-336
2N2723 thru 2N2725 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 10 mAde, VCE2 = 5.0 Vde, IB2 = 0) 2N2723 2000 10,000
2N2724 7000 50,000
(IC = 100 IlAde, VCE2 = 5.0 Vde, IB2 = 0) 2N2725 2000 10,000
SMALL-SIGNAL CHARACTERISTICS
Current-Gain- Bandwidth Product (Each Unit) IT MHz
(IC = 10 mAde, VCEI or V CE2 = 10 Vde, 1= 20 MHz) 100 -
Output Capacitance Cob1 pF
(V CBl = 10 Vde, IE2 = 0, I = 140 kHz) 2N2723, 2N2724 - 10
2-337
2N2728 (GERMANIUM)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Base Voltage V CB 15 Vdc
Thermal Resistance
(Junction to Case) IlJC 0.5 °C/W
2-338
2N2728 (continued)
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Collector Cutoff Current ICEX mAdc
VCE =15V, VBE = 1 V - - 10
VCE =10V, VBE = 1 V, TC = l00·C - - 35
• To avoid excessive heating of the COllector junction, perform these tests with an oscilloscope.
MERCURY SWITCH
0·500
.08750
9.90 1.75V
+ SWITCHING TIME TEST CIRCUIT
+
-----tll...----'----~
6V
2-339
2N2785 (SILICON)
CASE 20(8)
(TO·72)
Two NPN silicon annular transistors connected as a
darlington amplifier, and designed for applications re-
quiring very high gain.
2-340
2N2785 (continued)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (1) BV CE20 Vde
(IC = 20 mAde, IBI = 0) 40 -
Collector-Base Breakdown Voltage BV CBlO Vde
(IC = 100 /lAde, IE2 = 0) 60 -
Emitter-Base Breakdown Voltage BVE2BI0 Vde
(IE2 = 100 /lAde, IC = 0) 15 -
Collector Cutoff Current I CEO nAde
(V CE =20Vde, IB =0) - 500
ON CHARACTERISTICS
DC Current Gain« 1) hFE -
(IC = 1. 0 mAde, V CE2 = 4,0 Vde) 600 -
(IC = 10 mAde, VCE2 = 5,0 Vde) 1200 -
(IC = 100 mAde, V CE2 = 5,0 Vde) 2000 20,000
II) Pulse Test: Pulse Width ~ 300 /lS, Duty Cycle ~ 2,0%,
2-341
2N2800 (SILICON)
2N2801
2N2837
2N2838
CASE 22
(TO-18)
" 2N2837
2N2838
2N2800
2N2801
Collector connected to case
MAXIMUM RATINGS
DELAY AND RISE TIME TEST CIRCUIT STORAGE AND FALL TIME TEST CIRCUIT
+nr-
64 RISE TIME,,;; 2 ns lK 64
10 = SOn
PRf = 150 PPS
RISE TIME,,;; 2 ns 500 500
TO OSC I LLOSCOPE TO OSCillOSCOPE
-:U-
RISE TIME ""'5ns
50
l,.= 10 M!J -¥,fI,,-........
Z," =10 MQ
__ f- 12~
2-342
2N2800, 2N2801, 2N2837, 2N2838 (Continued)
2-343
2N2832 (GERMANIUM) PNP germanium transistors for switching and
amplifier applications.
2N2833
2N2834 CASE 11A CASE 4-04
(TO-3 modified) (TO-41)
MAXIMUM RATINGS
Rating Symbol 2N2832 2N2833 2N2834 Unit
Collector-Emitter Voltage VCEO 50 75 100 Vdc
......
"""" ..........
~
I"-.....
THESE TRANSISTORS ARE ALSO SUBJECT TO SAFE AREA CURVES AS
INDICATED BY FIGURES 2. 3. 4. BOTII LIMITS ARE APPLICABLE
AND MUST BE OBSERVED
.............
r--.....
25 50 75 100 110 125
Te. CASE TEMPERATURE (OC)
SAFE OPERATING AREAS
FIGURE 2 - 2N2832 FIGURE 3 - 2N2833 FIGURE 4 - 2N2834
20
10
1\ 'Th ..,50"s I "" \c ~.so"s
\ ..... :\ .,1-- 50 ,",
SOo"s
~
::E
S
1.0
H ~5ms
\\
j
~OC
,,\ L,\ -~
\
5ms
\. .... ~
SOo"s - ,
1\
~
jms ~"
'lit\
500"s --
...z
0-
'":::><>'"
, DC
,"
I'\. ..... OC
'"~
~<> 0.1
,I"'
" .. I'. " ~
I\,'
~ .........
~
'1~
.2
.01
,'\.
,
~
~
\ ,
~
of temperature and duty cycle, these curves can be used as lonl a"the averaie power derating curve (Filure 1) is,al,so taken into consideration to insure operation
below the maximum junction temperature. '
2-344
2N2832 thru 2N2834 (Continued)
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 1. 0 Adc, V CE = 2.0 Vdc) 50 75 -
(IC = 10 Adc, VCE = 2.0 Vdc) 25 - 100
DYNAMIC CHARACTERISTICS
Small Signal Current Gain h fe -
(IC = 1. 0 Adc, VCE = 10 Vdc, f = 5.0 MHz) 2.0 3.5 -
Rise Time t
r
- 2.0 4.0 jJ.s
2-345
2N2832 thru 2N2834 (Continued)
0.8
i
~ 0.7
Te=-!'·C
./ ~~
V
~ ~
g le= 20A
~r-
~
I
~
Ie = lOA
--" -c;
0.6
lell, = 20
~~- .. 1--- ~
f--
~ 0.5
;
ID 0.4 f--Ie = lA -
Ie 3A
-- " lei I, = 10
1
,]
0.3
.01 0.1 1.0 5.0
I,. BASE CURRENT (AMP)
i I
Cv
0.8
Te=2SoC ~
...
~ 0.7
z:
~ 0.6
~
lell, = 20-1\
':'=P'~
I....
II
~/
~/
-
~
~ 0.5
~
~ 0.4
Ic =3A
1.. 1- .. ~. --_-..
_~~
Ie = lOA
.... -- ,..- ~ ~~
.... 1"1
r- lell, = 10
J 0.3
Ie 1A I
.01 0.1 1.0 5.0
I,. BASE CURRENT (AMP)
0.9
~
~ 0.8
Te =10"C
I I I I
Ie = 20A -
n l......:": I-'
~
g 0.7
lell, = 20
"\ / A. !7
}/~-;/
I
~
0.6
I'
I'
L~ lei I, = 10
~ 0.5
-...., ~' fo':f::;::t'
i 0.4
Ie = lOA
;""'"
~ ~ i'
,..
-~ ~
le=3A
j
.} 0.3 I I 1 r\ ~
0.25
I I
.01 0.1 1.0 5.0
I,. BASE CURRENT (AMP)
2-346.
2N2832 thru 2N2834 (Continued)
g 0.5
I~A \
I
g
w
Ie = IA le=3A te = 'Ie J 20A' \
~ 0.4
\
o
>
z
o
~ 0.3 1\ \
::>
~
\ \ f\ 1\ 1> ........
-
le/l, = 20 - I
'" ,/
~ 0.2
i\
~
e
~ 0.1
o
'- ............ "'
-= r--= --t.
.....
iii 0.5
:;
o
~
w
~ 0.4
le= IA
, I
Ie = 3A Ie = lOA ,,
le=20A:
'" I
i\
\ ~
~
I
z
o
~ 0.3
\ /
\
~
~
:i
~
e
0.2
\ "-
~ i'.....
\.
I' r--. .....
I'-r--
Ie/I, = 20 '1-" ............
~/
,I
,,'" r- I-
/ le/l,=IO ~,/
~ 0.1
o
'" Te 25'C
I
-= f=. r---
-
.01 0.1 1.0
I,. BASE CURRENT (AMP)
~ 0.7
g \ ~ 20~
! '\.. Ie = IA le= 3A
\
Ie = lOA !lle = ISA Ie
.~
0.6
1\
>
~
0.5 \\ ,,\
1\
~ 0.4 "-1"- 1\ r i'...
~
f5 0.3 f', \ \ I' I
!::
~
~ 0.2
.....
..............
'", le/l., = 20-
"""\
~~
/r---I'-
>-- r-
~ 0.1
......... ..... b-..:: ... 1--'11
Te -100'C - le /l , = 10
2-347
2N2832 thru 2N2834 (continued)
./~
"/ ~ 0.4 / /
8 I
II
.2 0.2
0.1
~V.. ~2V
10
1 IZ7
o
/ /
//
5 10 15 20
.01 .02 .04 .06 0.1 0.2 0.4 0.6 1.0 2.0
I•• BASE CURRENT (AMP) I.. BASE CURRENT (rnA)
f=+looOC
/ I
! 40
I
I
I I
/
/
/ I I
::::> +100 oC / I /
+25OC/ /_400C Va =2V <> 20
I
I I
I
_
.2 8
10
.-/ +25°C
/
V 1400C
0.2 6
0.1 I I 4
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.2 0.1 o 0.1 0.2 0.3
VII. BASE.£MITTER VOLTAGE (VOLTS) V•• BASE.£MITTER VOLTAGE (VOLTS)
~
I,..- 100·C
1\"
'\.'1
~ 6
4
2
I
20
10
."
.........
I I I
o 0.2 0.4 0.6 0.8 0.1 1~ 10
VII. BASE EMITTER VOLTAGE (VOLTS) Ie. COLLECTOR CURRENT (AMP)
2-348
2N2832 thru 2N2834 (continued)
FIG 11 - RISE and FALL TIME vs COLLECTOR CURRENT FIG 12 - STORAGE TIME YS COLLECTOR CURRENT
I III
I.. = lu = D.lle
klIS~ ~IIME/
V
J
...~
4
r---- - -~ -- I" = I ..
....
= 0.1 Ie
::E
...;::
co
ali
'\
"', ....
0
~/ '".:
~
VI'
-"":::: r.:.. V"
/ - r---- mi lME
0- 20V
R, AOJUST R" R.. Rio for I" = In = O.lle
0- 2V
PULSE CONDITIONS; Ie = 5 AMP. I" = 0.5 AMP
Va - B VOLTS
~
... 1500
~
,... ,.......
'""
u
z
.............. <
t=
/' u
< 1000 ........
~ i""-
'\. ...
u
800
'"
<
"I
'"
....
0 600
t'-....
\ ..........
\ ~
u ["'-.......
400
J ......
o 300
0.1 0.2 0.4 0.6 0.8 1 1.0 4 8 10 20 40
Ie. COLLECTOR CURRENT (Ade) Ve•• REVERSE VOLTAGE (Vde)
2N2837, 2N2838
2-349
2N2845 thru 2N2848 (SILlC()N)
MAXIMUM RATINGS
2-350
2N2845 thru 2N2848 (continued)
ON CHARACTERISTICS III
DC Current Gain
(IC " 150 mAde, VCE " 10 Vde) 2N2845, 2N2846
hFE
30 120
-
2N2847, 2N2848 40 140
(ic " 500 mAde, VCE " 10 Vde) 2N2845, 2N2846
2N2847, 2N2848
20
30
--
(IC" 500 mAde, V CE = 1 Vde) All Types 10 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(ic " 150 mAde, 18 " 15 mAde) All Types - 0.4
(Ie " 500 mAde, 18 " 50 mAde) 2N2845, 2N2846 - 1.0
2N2847, 2N2848 - 0.75
FIGURE 1- TURN·ON TIME TEST CIRCUIT FIGURE 2- TURN·OFF TIME TEST CIRCUIT
Vee
200ns R,
2-351
2N2857 (SILICON)
NPN SILICON
NPN SILICON RF SMALL-SIGNAL TRANSISTOR RF SMALL-SIGNAL
TRANSISTOR
I
• Low Collector·Base Time Constant -
rb'Cc = 15 ps (Max) @ IE = 2.0 mAde
• Characterized with Scattering Parameters
• Ideal for Micro-Power Applications·
0.209
0.230
DlA
r
~o
1_1'
*MAXIMUM RATINGS 0.500
MIN
Rating Svmbol Value ~:~~: OIA
~
Unit
~
0.048
CASE 20110)
TO-72 PACKAGE
2-35.2
2N2857 (continued)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage** BVCEO 15 - - Vde
(lc = 3.0 mAde, IB = 0)
Collector-Base Breakdown Voltage BVCBO 30 - - Vde
(I C = 1.0 !lAde, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 2.5 - - Vde
(IE = 10 !lAde, IC = 0)
Collector Cutoff Current ICBO - - 0.01 !lAde
(VCB = 15 Vde, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(lC = 3.0 mAde, VCE = 1.0 Vde)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product CD fT 1000 - 1900 MHz
(lC = 5.0 mAde, VCE = 6.0 Vde, f = 100 MHz)
Collector-Base Capacitance Ceb - 0.7 1.0 pF
(VCB = 10 Vde, IE = 0, f = 0.1 to 1.0 MHz)
Small-Signal Current Gain hfe 50 - 220 -
(lC = 2.0 mAde, VeE = 6.0 Vde, f = 1.0 kHz)
Collector-Base Time Constant rb'C e 4.0 - 15 ps
(IE = 2.0 mAde, VCB = 6.0 Vde, f = 31.9 MHz)
Noise Figure (Figure 1) NF dB
(IE = 0.1 mAde, VCE = 1.0 Vde, RS = 50 ohms, f = 450 MHz) ~ - 5.8 -
(lC = 1.5 mAde, VCE = 6.0 Vde, RS = 50ohms, f = 450 MHz) - 3.7 4.5
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain (Figure 1) G pe dB
(IE = 0.1 mAde, VCE = 1.0 Vde, f = 450 MHz) ~ - 11 -
2-353
2N2857 (continued)
CepacitalJC8wluesin pF
C4
0.3-5.0
VOUI
Rs=50n
HVEE
L1 - 3tums'16 AWG wire. 318" 0.0. 1-1/4" long.
VEE =-7.5Vdc
Capacitance valulISin pF
Ll, l2-Silver-platedbrassrod. 1-1f2"'ongand 1f4" die. Install (e) Apply VEE. and with signal generator adjusted for 5 mV
at least 1/2" from nearest vertical chassis surface. Dutput from amplifitr, tune Cl,C3,end C4 for
l3 - 1/2 turn #16 AWG wire, located 1/4" from and maximum output.
paraileltoL2. (OJ Interchange connections to signal generator and
;0 External intarleadshield to isolate cotl&ttor lead from
_
RFvoltmeter.
emitter and base leads. (E) With sufficiant signal appliad to output terminals of
Neutralization Procedure: amplifier, adjust C2for minimum indicationat input.
(AI Connect 450-MHz signal generator (with RS = 50 ohms) IF) Repeat steps IA), IBI,and ICI to detarmine if retuning
to input terminals of amplifier. is necessary.
(8) Connect 50-ohm RF voltm,teracrossoutputterminals
of amplifier.
FIGURE 3 - NOISE FIGURE versus FREQUENCY FIGURE 4 - NOISE FIGURE versus SOURCE
RESISTANCE AND COLLECTOR CURRENT
.--
---
10 600
I-- v'CE = ~.O Jde I 500 t- VCE = 6.0Vdc
9.0 F- t-.... r---;:; f = 105 MHz
IC = 1.0 mAde 400 .......
8.0 I- RS = Optimum (~250 Ohms@105and 200 MHZ),
in
:;; r f:: r- I-- I'""--. ~ ~t--.
:x: 300
7.0 I- ~ 100 Ohms@450 MHz ........ l"-
'"
OS
w
8
..,2!
w ~ ~2.9d8
200
'":::> 6.0 «
In
i'-- t-- 3.0 dB ~ '\
'"
u:
j.5~B
5.0
!Jl ~ 100 F-
(5 4.0 ..,w
2!
u: 3.0 - l - I- '"
:::>
90
80 f;;;: i-4.0dB
2! 70
~
2.0 .,; 60
'" 50
=R
5dB
1.0 I 40 1
o 30
50 60 70 100 200 300 400 500 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
f. FREQUENCY (MHz) IC. COLLECTOR CURRENT (mAde)
l - ~L~B
P ........ '" I.......
..,zw
«
In
200 i'-
)
'\
1\ "I"
i3
'"w 100 l- V' r--.
..,
'":::> 70 I--
4.0 dB
~ ~
it 50
40
30
0.5
I-
m 0.7 1.0
~
2.0 3.0
-- I--
J)
10
5.0 7.0
Ic. COLLECTOR CURRENT (mAde)
2-354
2N2857 (continued)
~ 2. 0 0 25
S
G 1.8 r-V~E : 16.oUe
"
~ 1.6
8. Or---
RS ~ 50 Ohms
f" 450 MHz G~er-- 20
r-
'"
~ 1.4
.....- ~ ~ ~
w
~
V
/
1\ 6. 0
V-
""
~ 1. 2
;1i
~ 1.0 /
,/
V
\
\
'"u:w
~ 4. 0
./
" <:
NF
~I-"'"
I-'"
i
;;'
~
08
2. 0 5.0
c: 0.6
i3
.c: 0.4 0 o
1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.1 0.2 0.5 0.7 1.0 2.0 5.0 7.0 10
20 10
1
18 f- VCE" 6.0 Vde 9.0
VCE" 6.0 ~de
IC "1.5 mAde t- IC "1.5 mAde
~ 16
'E 8.0
.....- ~ V
V[--
'E .5 .1
.5 14 w 7.0 +Jb
w
'-' /'
V V '-'
z
z 12 6.0
'">->-
+ibi'V--
/ / '"
>-
>- V
"
10 5.0
"'"'" V ./ V
8.0 '">-'" 4.0
V I-"'"
-----I--'
>- ~ 9i'V 1i'
1i' 6.0 >- 3.0
-
/V g VI-'
'>=";; 4.0
V ~
2.0
I-- 90' ~
2.0 1.0
o o
100 150 200 300 400 500 600 800 1000 100 150 200 300 400 500 600 800 1000
~ 50 ~ 5.0
'E 45
VCE" 6.0~de 'E
.5 4.5
f- VCE "6.0 Vde
.5 IC "1.5 mAde IC "1.5 mAde
w
'-' 40 ~ 4.0
z 9f,
'"
>-
>-
"'"
'"'"
35
30
'"""
"
V f-"
-- -
i
~ 3.5
>-
"'"
c 3.0
V
/
'"
jb re
w 25 2.5
~
'"z 20
/ ~ 2.0
./
;::: ibf,
>- 15
V ~ 1.5
k-'"
/
----
~ i'.. V
'" 10 ffi 1.0
~ i'.. ~
~ 5.0 c: 0.5
-9re
.£ o
100 150 200 300 400 500 600 800 1000 100 150 200 300 400 500 600 800 1000
f. FREQUENCY (MHz) f, FREQUENCY (MHz)
2-355
2N2857 (continued)
FIGURE 12 - S11. INPUT REFLECTION COEFFICIENT FIGURE 13 - S22. OUTPUT REFLECTION COEFFICIENT
FIGURE 14 - S12. REVERSE TRANSMISSION COEFFICIENT FIGURE 15 - S21. FORWARD TRANSMISSION COEFFICIENT
2-356
2N2857 (continued)
2-357
2N2894 (SILICON)
CASE 22
(TO-18)
Vss -2V
620
1000
' - - - O Vout TO SAMPLING SCOPE
lin:::=" 100 kO
O.l,uF tr ~ 1 ns
2kO
Vin 0 - - -...-------,1 t - - -....- - " " ' ' ' v - - - t - - f
1000
2-358
2N2894 (continued)
ON CHARACTERISTICS
DC Current Gain It)
(IC = 10 mAde, VCE = O. 3 Vde)
hFE
30 -
-
(IC = 30 mAde, VCE = 0.5 Vde) 40 150
(IC = 30 mAde, VCE = 0.5 Vde, T A = _55°C) 17 -
(Ie = 100 mAde, VCE = 1.0 Vde) 25 -
Collector-Emitter Saturation Voltage(1) VCE(sat) Vde
(IC = 10 mAde, Ia = I mAde) - 0.15
(IC = 30 mAde, IB = 3 mAde) - 0.2
(IC = 100 mAde, Is = 10 mAde) - 0.5
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product IT MHz
(Ie = 30 mAde, VCE = 10 Vdc, f '" 100 MHz) 400 -
Output Capacitance Cob pF
(VCB = 5 Vde, IE = 0, 1= 140 kHz) - 6.0
2-359
2N2895 (SILICON)
2N2896
2N2897
CASE 22
(TO·IS)
MAXIMUM RATINGS
Rating Symbol 2N2895 2N2896 2N2897 Unit
Collector-Emitter Voltage VCEO 65 90 45 Vdc
2-360
2N2895, 2N2896, 2N2897 (Continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(Ie= 10 /'Adc, VCE = 10 Vde) 2N2895 10 -
(IC = 100 /'Ade, VCE = 10 Vde) 2N2895 20 -
(IC = 1. 0 mAdc, VCE = 10 Vde) 2N2896, 2N2897 35 -
(IC = 10 mAdc, VCE = 10 Vdc) 2N2895 35 -
(IC = 10 mAde, VCE = 10 Vdc, TA = -55"C) 2N2895, 2N2896 20 -
(IC = 150 mAde, VCE = 10 Vde)'111 2N2895 40 120
2N2896 60 200
2N2897 50 200
(IC = 500 mAde, VCE = 10 Vdc) II) 2N2895 25 -
Collector-Emitter Saturation Voltage 111 VCE(sat) Vdc
(IC = 150 mAde, ~ = 15 mAdc) 2N2895, 2N2896 - 0.6
2N2897 - 1.0
Base-Emitter Saturation Voltage III VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 2N2895, 2N2896 - 1.2
2N2897 - 1.3
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) 2N2895, 2N2896 120 -
2N2897 100 -
Output Capacitance Cob pF
(VCB = 10 Vde, IE = 0, f = 100 kHz) - 15
Input Capacitance C ib pF
(V BE = O. 5 Vdc, IC = 0, f = 100 kHz) - 80
(11 Pulse Test: Pulse Width:; 300 1./8, Duty Cycle:; 1. 8%.
2-361
2N2903 (SILICON)
2N2903A
Case 654-04
TO-78
(11 Pulse Test: Pulse Width < 300 fiS, Duty Cycle < 2. 0"0.
2-362
2N2903, 2N2903A (continued)
Noise Figure NF dB
(IC = 10 /lAdc, V CE = 5.0 Vdc, RS = 10 k ohms, f = 1. 0 kHz) - 7.0
MATCHING CHARACTERISTICS
DC Current Gain Ratio** hFE/hFE2* -
(IC = 1. 0 mAde. V CE = 5.0 Vdc) 2N2903 0.8 1.0
2N2903A 0.9 1.0
Base Voltage Differential IV BEI- V Bd mVde
(IC = 10 /lAde, V CE = 5.0 Vde) 2N2903 - 10
2N2903A - 5.0
Base Voltage Differential Gradient ,,(V BEI- V BE2) /lV/'C
(IC =10 IlAdc, VCE = 5.0 Vdc, T A = -55' C to +125'C)
2N2903 6.TA - 20
2N2903A - 10
2-363
2N2904, A thru 2N2907, A(SILICON)
2N3485,A, 2N3486,A
!m
• 2N2904,A thru 2N2907,A Complement to NPN 2N2218,A,
2N2219,A, 2N2221,A, 2N2222,A
Ir:~--L
• JAN/JTX Available, Except 2N3485 and 2N3486.
llo.",
CASE 31 (1) T T
SELECTOR GUIDE 2N;~:'A L ~~
U.U16-1r
.Characteristic
2N2905.A
o:m &8ll)
~/AO.028
Pm 1. Emitll!r
2.BallG
A.~
3.Colleo;tor
BVCEO hFE
Device
Type
Ic=10mAde
Volts
Ic=I.0mAde
Min
Ic a l50mAdc
Min
IC =500 mAdc
Min Package
~
2N2904 40 25 40 20
li1
0.209
r
I
TO-5
2N2905 50 100 30
I
imb
1!1]!I OIA OIA \;--
2N2906 25 40 20 We'lhl ~ 1.15 gram
TO-18
2N2907 50 100 30 "" II 'I ~
I
2N3485
2N3486
2N2904A
2N2905A
60
25
50
40
100
40
100
40
20
30
40
TO-46
TO-5
I T
I
100 50 O.SOO
2N2906A 40 40 40 a,Olll MIN CASE 22 (1)
2N2907A
2N3485A
2N3486A
100
40
100
100
40
100
SO
40
50
TO-18
TO-46
0.019 iliA
p",1. Em",,,
2 Ba~
3 Collectlll
.l TO·18
2N2906,A
2N2907,A
O.050-i :_
~ OJI!"..
-MAXIMUM RATINGS 9~_~0178 OIA
OJ"
Rating Symbol Non-A Suffix I A-8uffix Unit OO"MAI L
Collector-Emitter Voltage VeEO 40 I 60 Vdc
"I, -~
Collector-Ba .. Voltage VeB 60 Vdc I 0085
Emitter-Base Voltage VEB 5.0 Vdc OSOO
I
MIN
Collector Current -.Continuous Ie 600
TO·46
2N2905,A 2N2B07,A 2N3486,A
2N3485.A
T ot81 Device Dissipation Po 600 400 400 mW 2N3486,A
@TA=250e
Derate above 2Soe 3.43 2.2B 2.28 mW/oe
Total Device Dissipation Po 3.0 1.8 2.0 Watts
@Te=2Soe
Derate above 250 e 17.2 10.3 11.43 mW/oe
Operating and Storage Junction TJ,Tstg -65 to +200 °c The respective JEOEC registered
Temperature Range dimensions and nOlesapply
2-364
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A (continued)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) BVCEO Vde
(lC = 10 mAde, IB = 0) Non-A Suffix 40 - -
A-Suffix 60 - -
Collector-Base Breakdown Voltage BVCBO 60 - - Vde
(lC = 10 "Ade, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 5_0 - - Vde
(IE = 10 "Ade, IC = 0)
Collector Cutoff Current ICEX - - 50 nAde
(VCE = 30 Vde, VBE = 0_5 Vde)
Collector Cutoff Current ICBO "Ade
(VCB = 50 Vdc, IE = 0) Non-A Suffix - - 0_020
A-Suffix - - 0_010
(VCB = 50 Vde, IE = 0, TA = 1500 C) Non-A Suffix - - 20
A-Suffix - - 10
ease Cutoff Current IB - - 50 nAde
(VCE = 30 Vde, VBE = 0_5 Vde)
ON CHARACTERISTICS
DC Current Gain hFE -
(lC = 0.1 mAde, VCE = 10 Vde) 2N2904,2N2906,2N3485 20 - -
2N2905,2N2907,2N3486 35 - -
2N2904A,2N2906A,2N3485A 40 - -
2N2905A,2N2907 A,2N3486A 75 - -
(lC = 1.0 mAde, VCE = 10 Vde) 2N2904,2N2906,2N3485 25 - -
2N2905,2N2907,2N3486 50 - -
2N2904A,2N2906A,2N3485A 40 - -
2N2905A,2N2907A,2N3486A 100 - -
(lC = 10 mAde, VCE = 10 Vde) 2N2904,2N 2906,2N3485 35 - -
2N2905,2N2907,2N3486 75 - -
2N2904A,2N2906A,2N3485A 40 - -
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Produet(2) fT 200 - - MHz
(lC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance Cob - - 8_0 pF
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Input Capacitance Cib - - 30 pF
(VSE = 2_0 Vde, IC = 0, f = 100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time ton - 26 45 ns
(VCC = 30 Vde, IC = 150 mAde,
Delay Time IBl = 15 mAde) td - 6_0 10 ns
(Figure 15a)
RiseTime tr - 20 40 ns
2-365
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A (continued)
2.0
- --.-
+IWC
r--
z i-- I -
-f-
-- - - '-
- - --- - - '"
;;: ~ ~ f--- -l"-
...z
to i'
+25°C
....... ....
-
w 1.0
'"~
-- --- -- "
.......
-- - -
'" I\,
'" 0.7 "
- - -- - - "
Q
~
ffi 1-- _
~ r---
--- .- - -- "
N
:::; 0.5
< 'Ii' , 55°C .......
'"
:IE
'"
Q .... ...
Z
~ 0.3
--VeE~IOV
---- VeE ~ 1.0V \. ....
0.2 \
0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 so 70 100 200 300 500
-
h.. @ 1 volt is approximately 0.60 of h.. @ 10 volts.
\ ['..... Using the guaranteed minimum of 100 @ 150 mA and
\ SOmA
I--- 10 V, po = 60 and substituting values in the overdrive
~ 0.2 equation, we find:
IOj_ 3=~
ISO/I"
1.. = 7.5 mA
0.4
+25°C TO +175°C
"I ...
-2.0
l;'~
o
VeE ISATI @ lell, - 10
-3.0
-nI01+15~t
0.5 1.0 2.0 5.0 10 20 SO 100 200 500 0.5 1.0 2.0 5.0 10 20 50 100 200 500
Ie. COLLECTOR CURRENT (mAl Ie. COLLECTOR CURRENT (mAl
2-366
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A(continued)
SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE
VCE = 10 V. T A = 2SoC
FIGURE 5 - FREQUENCY EFFECTS FIGURE 6 - SOURCE RESISTANCE EFFECTS
6.0 10
11111 II 1111
8.0
\ Ie ~ 10 p.A f~ l.IikHz V
1\ I I
4.0 I-N-+-t1--tt++t+++I-tt-ttlH-t-t-t-+t+t-ttl
Ic~IO"" i
m
6.0
1\ 'b V II
\ 100pA
V
3.0 tt1jttn1tttt:1=t!~RS~~i4~.1~kk!llt~:111111fH 0::
~
iii 4.0
I\~ '\ I
2.0 p...:1-....--I_-If-+++H+H-+-+-+ ~~:: ~:~ ~ \Ii r-..\ "I'-.I ~
,\[\ !-'V
..... -
1.0 I-H-+=f1~+t++++I+I+l-f+-+-+--+-+++I+H
111111 2.0
lmA
Ie ~ 100 p.A ~
I-H-If-+++H+H-+-+-+ Rs ~ 1.2 kll +-++++tIti
0~~~~~~~~~11~"~1"~1~~~~ o
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f. FREQUENCY (kHz) Rs. SOURCE RESISTANCE (k OHMS)
h PARAMETERS
VCE = 10 Vdc. f = 1.0 kHz. T A = 25°C
This group of graphs illustrates the relationship between hfe and other "h" parameters
for this series of transistors. To obtain these curves, a high-gain and a low'gain unit were
selectad and the same units were used to develop the correspondinglv numberad curves
on each graph.
FIGURE 7 - INPUT IMPEDANCE FIGURE B - VOLTAGE FEEDBACK RATIO
20 20
...... "\.
10
l"\ '\
~
5.0
~ 10
'"
0
""
~
, i,.'" 5.0
z:
~ 2.0 "-
r-... liil
'\.'
'\
....... ~
l!
.....-
5
!Ii:
1.0 2
~
2.0
1' ..... ~
;5
.J 0.5 is! I"\. 2
r.... ..1 .......
1.0 ~
0.2
.........
0.1 I' 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20
Ie. COLLECTOR CURRENT (mAdel Ie. COLLECTOR CURRENT (mAde)
~
.....
<
z
to
100
I-
~
50
,
~< 70
~
V
'"'
'"
2
20
./
./2
:i 50
o
j
10
1/ V
30 5.0
0.1 0.2 0.5 1.0 2.0 5.0 10 20 0.1 0.2 0.5 1.0 2.0 5.0 10 20
Ie. COLLECTOR CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
2-367
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A (continued)
"
- -
...
~; ,......
30
20
" ...
,
- - ~'
300
200
OA, ACTIVE REGION CHARGE
,
10
i' 100 I \I
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0. 10 20 30 50 70 100 200 300 500
Ie. COLLECTOR CURRENT ImAl Ie, COLLECTOR CURRENT ImAl
70
IBI = IB2 ~
~
'"
;::::
~
100
70
" ~,
lel l, 0
~I;;
.J
50 lello
~- .. :-::-
.:i 50 lel l, 10
. ..
30 ml.," ..t--..,
... 30 -
1-1"1
, ......
20 ~:e(:, - 21 20
10 III 10
20 30 50 70 100 200 300 500
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10
Ie. COLLECTOR CURRENT ImAl Ie, COLLECTOR CURRENT (mAl
FIGURE 15. - DELAY AND RISE FIGURE 15b - STORAGE AND FALL
TIME TEST CIRCUIT TIME TEST CIRCUIT
o_~
TO OSCI LLOSCOPE TO OSCI LLOSCOPE
RISE TIME" 5.0 ns RISE TIME" 5.0 ns
50 50 IN916
-J200nsL
2-368
2N2904,A thru 2N2907,A/2N3485,A, 2N3486,A(continued)
...
:c
~
t;
:0
'"~
::
I:;
300
200
100
r-l-- V~E='2JJ
TJ = 250 C
,/
...... 1-" - .... _f-
~
20
I--
r- -t--r-
-r-
......
........
........ C"
TJ = 25'C
~
z: 70
!i 10
1i!i ~ 8.0
I 50 § 6.0
~
Cob I-
/ u
30 .....
IB 20
1/ 4.0
......
,.f V
10 V 2.0
0.1 O.L 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.1 0.2 0.5 1.0 20 5.0 10 20 40
Ie, COUECTOR CURRENT ImAde) REVERSE BIAS IVOLTS)
...
2.0
1.0
'"
tOms, , .....
10",,,,-
This graph shows the maximum IC-VCE limits of the device
~ 0.7 both from the standpoint of thermal dissipation (at 2So C case
OO.c
....
ill
0.5
r TO 1S
· """ ..
:,.
TO·5 temperature), and secondary breakdown. For case temperatures
other than 2So C, the thermal dissipation curve must be modified
.
'"'"=> 0.3
0.2
r-T046 in accordance with the derating factor in the Maximum Ratings
table.
'"0
~ 0.1
TJ = 2000 C
F= --- Second Breakdown Limited
.
....;:....
~
de D...
To aV!)id possible device failure, the collector load line must
fall below the limits indicated by the applicable curve. Thus, for
cartain operating conditions the device is thermally limited, and
8 0.01 ~~ - .... -
Pul" Duty Cycle .. 10%
Bonding Wire Limited
for others it is limited by secondary breakdown.
§ 0.05 For pulse applications, the maximum IC-VCE product indicated
I- - - - - Thermal limitations @TC=250 C
by the de thermal limits can be exceeded. Pulse thermal limits
0.03 r Applicable For Rated BVCEO
may be calculated by using the transient thermal resistance curve
0.02 of Figure 19.
2.0 3.0 5.0 7.0 10 20 30 40
VCE, COLLECTOR·EMITIER VOLTAGE (VOLTS)
-
....
ill
in 0.5
2
..:
......
"''''
",2 ~ f-"
~~ 0.2
........
~fficc
u.. 0.1
TO·5 PACKAG~ .,.. 1:::::::: 9JC(t) = r(t)9JC
"'-'
0":
"''''
~~ 0.05 T046
~~ ~ 1..&"
TO·18
'"o ~
2 0.02
"t
0.01
10--4 10-1
t, TIME I,)
2-369
2N2912 (GERMANIUM)
MAXIMUM RATINGS
Rating Symbol Rating Unit
Collector-Emitter Voltage vCEO 5.0 Vdc
r ......
....".. 1---'-5 ms
breakdown. Collector load lines for
, ----
I specific circuits must fall within the
applicable Safe Area to avoid caus·
1
".
1---'-1 ms or less ing a catastrophic failure. These
15
curves are applicable for all case
temperatures, however, the nominal _
power-temperature derating is 75
10 watts minus 1.0 watt for each °C
when Tc ~ 35°C.
5.0
2-370
2N2912 (continued)
ON CHARACTERISTICS
DC Current Gain 2 hFE -
(IC = 10 Adc, VCE = 2.0 Vdc) ISO -
Uc = 5.0 Adc, VCE = 2.0 Vdc) 200 800
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
Uc = 5. 0 Adc, VCE = 2.0 Vdc, f = 1.0 MHz) 10 -
Rise Time 3 tr iJ.S
(VCC = 10 Vdc, IC = 5.0 Adc) - 2.0
...
GO:
:::> r/ 20mA
10
~ 8 V I
~
~
6
4
10mA
I
PRF= 200 Hz
PW= SO p.S
ADJUST FOR
2 I III(ONI = 0.2SA
~ 1.-OmA 10V
0.2 0.4 0.6 0.8 1.0
+
Va. COLL£CTOR.£MlnER VOlTAGE IWlTSl
2-371
2N2913 thru 2N2920 (SILICON)
2N2972 thru 2N2979
2N2919 JAN &JTX AVAILABLE
2N2920 JAN & JTX .
Operating and Storage Junction Temperature Range T J' T stg -65 to +200 °C
One Both.
Side Sides
Total Deville Dissipation @ T A = 25°C PD
Case 654-04 300 600 mW
Derate above 25°C 1.7 3.4 mW/oC
Case 655 250 300 mW
Derate above 25°C 1. 43 1. 72 mW/oC
Total Device Dissipation @ TC = 25°C PD
Case 654-04 750 1500 mW
Derate above 25°C .4.3 8.6 mW/oC
Case 655 500 750 mW
Derate above 25°C 2.85 4.3 mW/oC
2-372
2N2913 thru 2N2920, 2N2972 thru 2N2979 (continued)
ON CHARACTERISTICS
DC Current Gain'l1I hFE -
(IC = 10 !JAde, VCE = 5.0 Vde) 2N2913, 15,17,19, 2N2972 , 74, 76, 78 60 - 240
2N2914, 16, 18,20, 2N2973, 75, 77,79 150 - 600
(IC = 10 !JAde, VCE = 5.0 Vde, TA = -55·C) 2N2913, 15, 17, 19, 2N2972, 74, 76, 78
2N2914, 16, 18,20, 2N2973, 75, 77, 79
15
30
-- --
(IC = 100 !JAde, VCE = 5.0 Vde) 2N2913, 15, 17, 19, 2N2972, 74, 76, 78 100 - -
2N2914, 16, 18,20, 2N2973, 75, 77, 79 225 - -
(Ie = 1. 0 mAde, VCE = 5.0 Vde) 2N2913, 15, 17, 19, 2N2972, 74, 76, 78 150 - -
2N2914, 16, 18, 20, 2N2973, 75, 77, 79 300 - -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(IC = 1. 0 mAde, IB = 0.1 mAde) - - 0.35
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 500 !JAde, VCE = 5.0 Vde, f = 20 MHz) 60 - -
Output Capacitance Cob pF
(VCB = 5.0 Vde, IE = 0, f = 140 kHz) - 4.0 6.0
Noise Figure NF dB
(IC = 10 !JAde, VCE = 5.0 Vde, RS = 10 k ohms,
f = 1.0 kHz, BW = 200 Hz) 2N2914, 16, 18, 20, 2N2973, 75, 77, 79 - 2.0 3.0
2N2913, 15, 17, 19, 2N2972, 74, 76, 78 - 3.0 4.0
(IC = 10 !JAde, VCE ~ 5.0 Vde, RS = 10 k ohms, -
f = 10 Hz to 15.7 kHz, BW = 10 kHz,) 2N2914, 16, 18, 20, 2N2973, 75, 77, 79 - 2.0 3.0
'2N2,913, 15, 17, 19, 2N2972,,H, 76, 78 3.0 4.0
111 Pulse Test: Pulse Width ~ 300 jJS, Duty Cycle ~ 2.0%.
** The lowest hFE reading is taken as hFEl for this ratio.
2-373
2N2929 (GERMANIUM)
CASE 31
(TO-S)
Collector connected to else
MAXIMUM RATINGS
1.0
~5'C / ..... 1--''''-
TJ -
,/' / "
/
.....
.....--- - ~ i'..
I':l\.
/ ~ ~
,/ TJ = 25'C
~
/ V \
~ 1\
\
0.4
-1 -2 -5 -7 -10 -20 -so -70 -100
Ie. COLLECTOR CURRENT (mAde)
2-374
2N2929 (Continued)
Collector-Emitter Breakdown Voltage BVCES Ie= 100 /.I Adc, VEB = 0 25 45 - Vdc
Emitter Cutoff Current lEBO VEB = 0.5 Vde, Ie = 0 - 1.0 100 /.lAde
. .0-....
--
MAG=~
50~Z l-?" ~
10
~ 41gl l gnl
V
~
R, ISO!!
d
'~
10
"I'
1
10 30 50 70 100 100 20 30 50 70 100 100 500
2-375
2N2944 (SILICON)
2N2945 PNP silicon annular transistors designed for low-level,
high-speed chopper applications.
2N2946 MAXIMUM RATINGS
Rating Symbol 2N2944 2N294S 2N2946 Unit
Emitter-Collector Voltage VECO 10 20 35 Vde
ON CHARACTERISTICS
DC Current Gain ilpE
. -
(Ic = 1.0 mAde, VCE = O. 5 Vdc) 2N2944 80 180
2N2945
2N2946
40
30
160
130
--
Forward Current Transfer Ratio (inverted connection)
(IC = 200 "Ade, VCE = 0.5 Vdc) 2N2944
ilpE(inv)
6.0 20 -- -
2N294fi 4.0 17
2N2946 3.0 15 -
Offset Voltage VEC(off) mVdc
(~ =200 "Adc, ~ = 0) 2N2944
2N2945
-- 0.18
0.23
0.3
0.5
2N2946 - 0.27 0.8
(IB = 1.0 mAdc, ~ = 0) 2N2944
2N2945
-- 0.4
0;5
0.6
1.0
2N2946 - 0.6 2.0
Us = 2.0 mAde, ~ = 0) 2N2944
2N2945
-- 0.8
0.9
1.0
1.6
2N2946 - 1.0 2.5
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwldth Product fT MHz
(IC = 1.0 mAde, VCE = 6. 0 Vdc, f = 1.0 MHz) 2N2944
2N2945
10
5.0
15
13
--
2N2946 3.0 12 -
Output Capacitance Cob pF
(VCB - 6. 0 Vdc, ~ = 0, f = 500 kHz) - 3.2 10
2-376
2N2947(SILICON)
2N2948
CASE 1
(TO-3)
MAXIMUM RATINGS*
2-377
2N2947, 2N2948 (Continued)
Collector Cutoff
Current
I CBO 2N2947: VCB = 50 Vdc, IE = 0 -- -- 1.0 I'Adc
Emitter Cutoff
Current
lEBO 2N2947: VEB = 3 Vdc, IC = 0 -- -- 100 I'Adc
AC Current Gain Ihfe l VCE = 2.0 Vdc, IC = 400 mAde, f = 50 MHz 2.0 -- --
Collector Output
Cob
VCB = 25 Vdc, [E=O, f = 100 kHz -- -- 60 pF
Capacitance
Power Input Pin Pout = 15 W, f = 50 MHz, VCE = 25 Vdc -- 2.0 3.0 Watts
Efficiency
" IC(max) = 1A 2N2947 60 SO -- %
Power Input Pin Pout = 15 W, f = 30MHz, VCE = 25 Vdc -- 2.0 3.0 Watts
2-378
2N2947,2N2948 (continued)
25
20
f\ 1\1\ \\ '
80
70
60
20
IS
V
COLL EFF.
I-"""
V --
/
7
2.0
~
~
P"'y
,,
~ 50
2N2948 f-ol
2N2947 _ - ~ ....
=>
p,. = 3W
\
p.. = 3W <.>
tt 40
0-
g10 / l.--
V
~ .. =2.SW ~
'"G 30
0 '"~ V ?
~
\ ~
~
<.>
20
J / ./
V 2N2947
Ve• = 2SV
/Y f=50MHz
o
10
Vc~ ::=
20
25V
Te = 2S'C
40 60 80 100
\'\~ 200 300
10
o
o
,
o.S I I.S 2 2.5
Te = 2S'C
3.5
o
f, FREQUENCY IMH,) p.. , POWER INPUT (WATTS)
POWER OUTPUT versus COLLECTOR VOLTAGE POWER OUTPUT versus POWER INPUT
20 20r-----,------.----~~----_r----_.
/ IS~----4_--·--~~----~----~--~~
~5
// 0-
gIO~----4_~--_t--~~~----~----~
V 2N2947
P,.=3W
= 50MHz i
/
f
Te = 2S'C
,/ 2N2947
/
f=50MHz
Te = 2S'C
o
o 10 15 20 25 2 3
Va. COtLECTOR-EMITTER VOLTAGE (VOLTS) p,., POWER INPUT (WATTS)
2-379
2N2949 (SILICON)
2N29S0
* The maxImum ratings as gIven for de condItions can be. exceeded on a pulse baSIS. See Electrical
Characteristics.
POWER OUTPUT versus COLLECTOR VOLTAGE POWER OUTPUT versus POWER INPUT
/
V
V P" = 0.2SW
// 1=50 MHz
Tc = 25'C
/'
o V
o 5 10 15 20 25
OL-----~----~----~----~----~
o 0.1 0.2 0.3 0.4 0.5
VeE, CotLECTOR-EMITTERVOLTAGE (VOLTS) p.., POWER INPUT (WATTS)
2-380
2N2949, 2N2950 (Continued)
111
Collector Emltter- Open Base
Sustain Voltaire
VCEO(sus) IC=0.250A, IB=O 40 -- -- Volts
Collector-Emitter Current
ICES VCE= 60 Vdc, VBE=O -- -- 100 "Adc
VCE =50 Vdc, VBE= 0 -- -- 500
TC= + 175'C
AC Current Gain
I hfel VCE =2.0 Vdc 2.0 -- -- --
IC=40 mAdc, f=50 MHz
\ 1\ 1\1\ 90
p••,-
~
80 800
\ \ VeE = 25V
/'
1\ Te = 2S'C ~ ~ 70 1...
~3
>-
ffi 60 L 600 ~
z
\
~
--- ---
=> U
0-
B
\ ~ P.. =0.4W
!; § 50
0
/ COlL. HF.
"-., e'"
~2 '"~ 40
~ ~
/ ..-- 400 ~
\\
5
J 830 '"
.9
V ~ i"- Ie
20 200
o
10 20 40
prtni-\ 1\
60 80 100 200 300
10
o
o
/
0.1 0.2 0.3
Ve
0.4
= 25 Vdc
t::..:
Tc ~ 25°C
50 MHz
0.5
f, FREQUENCY IMH,.j p,., POWER INPUT IWAITS)
2-381
2N2951 (SILICON)
2N2952
CASE 31
(TO·5)
2N2951
CME~(TO·l8)
2N2952
MAXIMUM RATINGS.
2N2951 2N2952
Total Device Dissipation PD
(25°C Case Temperature) 3.0 1.8 Watts
(Derate above 25"C) 20 12 mW/"C
• The maximum ratings as given for dc conditions can be exceeded on a pulse basis.
See Electrical Characteristics.
2-382
2N2951, 2N2952 (Continued)
f = 50 MHz
VCE = 13.6 Vdc
IC(max) = 125 mA
Efficiency rt 35 -- %
IIiPuise Width = 100 /Ls, Duty Cycle = 2%
2-383
2N2951, 2N2952 (Continued)
-
POWER OUTPUT versus FREQUENCY OUTPUT CHARACTERISTICS versus POWER INPUT
1400 1000 100 200
J
l
I I f=SOMHz
1200
Vee = 13.SVde
Te = 2S'C --
Vo. = 13.6Vde
Te = 2S'C
p~. -
,....- V
800
t-- . / 80 ISO
-- .... -
~Ll.EFF._ :c
1000
~
i"
oS
~ 800
P" = 50 mW - - - \
\.
\; P" = 100mW I- 500
V.... .... 6°ffi
>-
120~
~
z:
!:;
o
'"~ 500
I\, 1\ §
'"~ ,,1
I V ~
~
.
t:;
=>
u
'"
~
\ f 400 40g 80
g
~
oJ 400 1\
j
/'
V .... I e
~
u
u
.§
200 20 40
200
\
810 20 40 SO 80100
\
200 300
o V
o 20 40 SO 80 100 120 140 160 180 200
o
P,,, POWER INPUT(mW)
POWER OUTPUT versus COLLECTOR VOLTAGE POWER OUTPUT versus POWER INPUT
--
1200 1400
f= 50 MHz·
P" = 100mW
f=50MHz
I J
1000
Te = 2S'C / .... ' ...
1200
Tc = 2S'C
Ve• = 28.0 de .....
- -
.... '" -~
V" " -
/
i" 1000
oS
~
!:;
o
'"
800
I
/
,- .....
./
13.6Vde_
/'
"...
:::::- - I-
/ ~
j
600
/ / S.3Vde_
I 400
,/ ,..-
J / / ......-
200
200
""
o l!
o 10 IS 20 25 30
o ~
o
7
20 40 SO 80 100 120 140 ISO 180 200
Va., COLLECTOR·EMITTER VOLTAgE (VOLTS) P", POWER INPUT(mW)
2.7 ,,"
H3.6V .001 ,.F
~
RL = 50n
0.22,.."
0.15,.."
-.:'
4-30 4·30
40·90
NOTt,
GROUND POINT musl be kept as close as
possible to the transistor emitter lead.
Transistor must be mounted with heat sink.
2N2955 (GERMANIUM)
2N2956
2N2957
CASE2~
speed switching applications.
(TO.18)Z \ \
2-385
2N2955, 2N2956, 2N2957 (Continued)
ELECTRICAL CHARACTERISTICS (continued)
Characteristic
On Characteristics
--- ---
Forward Current Transfer Ratio hFE
(Ie = 10 mAde, VCE" 1 Vde) 2N2955 1 20 43
2N2956
2N2957
2
3
30
60
64
105
---
---
(Ic = 50 mAde, VCE = 1 Vde) 2N2955 20 43 60
2N2956 40 76 120
2N2957 100 130 ---
(IC = 100 mAde, VCE = 1 Vde) 2N2956
2N2957
30
60
69
115
---
---
Collector-Emitter Saturation Voltage VCE (sat) Vde
(IC = 10 mAde, IB = 1 mAde) 2N2955
2N2956
5
6
---
---
0.12
0.12
0.20
0.18
2N2957 7 --- 0.09 0.15
(Ic = 50 mAde, IB = 5 mAde) 2N2955
2N2956
---
---
0.20
0.16
0.30
0.25
2N2957 --- 0.13 0.20
(Ie = 100 mAde, lB" 10 mAde) 2N2956
2N2957
---
---
0.23
0.18
0.34
0.26
Base-Emitter Voltage 4 VBE Vde
(IC = 10 mAde, IB = 1 mAde) 2N2955 --- 0.38 0.50
2N2956
2N2957
---
---
0.37
0.36
0.47
0.44
(Ic " 50 mAde, IB = 5 mAde) 2N2955
2N2956
---
---
0.51
0.48
0.65
0.60
2N2957 --- 0.45 0.55
(IC = 100 mAde, IB = 10 mAde) 2N2956
2N2957
---
---
0.56
0.52
0.70
0.65
Transient Characteristics
Output Cap~eitanee 10 Cob pF
(VCS = 5 Vde, IE = 0, f = 1 MHz) --- 2.5 4.0
Input Capacitance 10 Cib
(VBE = 1 Vde, IC = 0, f = 1 MHz) --- 3.3 --- pF
60
80
60
,.,... r.--
-,
.....
.....-~ .....
.-
i""'~
r- r-~
z
~ 40
50
...... I--' ~ \ \ ~ iIIo..
-..,;:
50
01--'"
,.,...f"'"
~ L,..-
I--'~i-' 1\
i-- TJ =
i--TJ =
75°C
25°C
..,~ 30 0
n r- ... TJ = OOC
1\
j
0
j...- i-"'~i-' jj~ 0
TJ = - 55°C
I\~ r-
'- I- TJ = 75°C
1'-- I-TJ = 25°C
I-TJ = OOC
TJ = , 5 n
1 JCE = 1Vde
10 0
5 6 8 10 20 40 60 80 100 10 20 40 60 80 100
FIGURE 3 - CURRENT GAIN CHARACTERISTICS FIGURE 4 - BASE EMITTER VOLTAGE versus COLLECTOR CURRENT
2N2957
200
- "'I"-
0.8
~~
v- \ r--- 0.7
I--'
v-: ~-\ t- ,....
~r-
--
V
100
/~ \ ...... g 0.6
o
\....... 2:. f.--
..
"...
--
./ \ V
.,. ,..,. ,-~
~
z 80
)( \ \ ~ 0.5 =--:
co
g
L J \
~~ ~K r--
I-
/
~ 60 '"
..,~ V lL\ 1\ \ \.. i- TJ = 75°C ~
::;; 0.4 L ~
~
TJ = 25°C - i-""" i-2N2955
40
vV' \ \ TJ = OOC
TJ = - 55°C_
~
;;'j ~ r\ 2N2956
2N2957
3
>" O.
1/
V O. 2
~e, = 1Vde
20 o. 1
5 10 20 40 60 80 100 20 40 60 80 100
Ie. COLLECTOR CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
2-387
2N2955, 2N2956, 2N2957 (Continued)
FIGURE 5 -2N2955
1.0
, 1
\ TJ = 2SOC
U> 0.8 I \
!:; lOrnA 20m'A' \ SOmA
g
'"
~. 0.6 \
> \
tiS
t; 0.4 \
~
..,
<5 \
j 0.2 \.
...........
I'.. '-
o
0.1 0.2 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8,0 10
I" BASE CURRENT (mAde)
FIGURE 6 -2N2956
1.0
I \ \ TJ = 2SOC
1 \ \
lOrnA 20mA SOmA \ 100mA
\
\ \
\ , \ ,
\. ..... ~
.......... ...........
o
0.1 0.2 .0,4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10
I,. BASE CURRENT (mAde)
1.0
\ ,
FIGURE 7 -2N2957
TJ =2SoC
lOrnA 20mA
1\
1\
SOmA
,
1\ 100mA
\
\ 1\
0.1
- '\
0.2
- 0.4
\
r--....
2-388
2N2955, 2N2956, 2N2957 (Continued)
TJ 85°C - 25 Vdc
I
0
I
TJ 155°C V
+0,5 Vdc
, TJ=V
~
1\'~ ~
~- 1--
- - 1-- 1--
co.
- 0
~ l.-
l.- t-
V.. (sal)
S
f""
V
1.0 -2, 0
o 2.0 4.0 6.0 8.0 10 12 14 16 18 20 o 10 20 30 40 50 60 70 80 90 100
2-389
2N2955, 2N2956, 2N2957 (Continued)
~
GENERATDR ~ t, T,'II. ,,, -
louT = 50.0 Vee = - 12V Ie. = - 50. mAdc
t, = 10 to 90% rise-time
INPUT PULSE:
tr=tf~lns
1,,=-5mAdc
1.. =-5mAdc ..,~ 1.4 t- TA = active region time constant
=
fJF Ie in saturation/II. (base uon" current)
-
..
!d:::;
INPUTPULSE WIDTH: 2350 VIEIO"1 = +2.2 Vdc
10.0. nsec (50.% D,UTY CYCLE)
t- po = h.. at edge of saturation -
DLJ 1.3
::E
IKO '"
c
;; \.
SCDPE
,"
-lo.V '"
c '\
l,N"'" I MEGO t; 1.2
CIN ~ 20 pF ~
510 t,": I ns ...
::E
.........
~ 1.1
.....
'"
0;; i...... r--
VII = +4.4V
'" 1.0
1.5 2.0 4.0 0.6 8.0 10
- 20
polf!,
2.0 ~ o. 2
~
L
1.0
5 10 20
--- 40 60
r:
80100
o ""'~
.02 .05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
1". COLLECTOR CURRENT (mAdc) Po/ile
O. I 10.
0.1 0.2 0.4 0.6 1.0 2.0 4.0 6.0 10 0..1 0..2 0..4 0.6 1.0 2.0 4.0. 6.0 10.
1,,/1.. CIRCUIT DRIVE RATIO. I" BASE CURRENT (mAdc)
2-390
2N2958 (SILICON)
2N2959
2N3115
2N3116
CASE 22
(TO·18)
2N2958 2N3115
2N2959 2N3116
Collector connected to case
MAXIMUM RATINGS
~~~;~~
2N311S
Rating Symbol 2N3ll6 Unit
(TO·S) (TO·1S)
Collector-Base Voltage VCB 60 60 Vdc
2-391
2N2958, 2N2959, 2N3115, 2N3116 (Continued)
2N2972thru 2N2979
For Specifications, See 2N2913 Data.
2-392
2N3009 (SILICON)
2N3013
2N3013JAN AVAILABLE
2N3014 NPN silicon epitaxial switching transistors designed
for high-speed, medium-power saturated switching
applications
MAXIMUM RATINGS
Rating Symbol Value Unit
CASE 27
(TO·52) Collector-Emitter Voltage- VCEO * Vdc
2N3009, 2N3013 15
2N3014 20
Collector Connected to Case
Collector-Emitter Voltage V CES 40 Vdc
Rl TO SAMPLING
0•.1
I
V SCOPE
in /IF
Zin = 50 ~ ~t-3....""R",4-+-£..
Input Z '" 100 kn
V in
0
• llL
F"A"
Vin l07..,...,t--+-..,.,,-+t..
890
_r----'w.--.--;Ir-'WI.~~)Vout
=-
OTO
"'--f"""-:-::;;;:l:::i at point "A"
Pulse Generator T V
To Oscilloscope S out
V. Rise Time = 1 ns
In 10 V Input Impedance = 50 n
Source Impedance = 50 n Rise Time == 1 ns
Vin Rise Time less than 1 ns PW == 300 ns Duty Cycle" 2%
2-393
2N3009, 2N3013, 2N3014 (continued)
ELECTRICAL CHARACTERISTICS (T A : 25" C uiliess otherwise Ilokd)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product IT MHz
(IC c 30 mAde, VCE = 10 Vde, I = 100 MHz) 350 -
Output Capacitance pF
Cob
(V CB c 5.0 Vde, IE = 0, f c 140 kHz) - 5.0
Input Capacitance C 1b pF
(V BE c 0.5 Vde, IC = 0, Ie 140 kHz) - 8.0
(II Pulse Test: Pulse Width c 300 ps: Duty Cycle ~ 2%.
2-394
2N3010 (SILICON)
MAXIMUM RATINGS
2-395
2N3010 (continued)
ON CHARACTERISTICS 111
DC Current Gain" hFE -
(I C = 1.0 mAde, VCE = 0.4 Vdc) 15 -
(IC = 10 mAde, VCE = O. 4 Vde) 25 125
(IC = 30 mAde, VCE = 0.4 Vde) 15 .
Collector-Emitter Saturation Voltage VCE(sat) Vde
(Ic " 1. 0 mAde, IB " 0.1 mAde) . 0.25
(IC = 10 mAde, IB = 1. 0 mAde) - 0.25
(IC = 30 mAde, IB = 3.0 mAde) - 0.38
(IC = 10 mAde, IB = 1. 0 mAde, T A = 85 0 C) - 0.4
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(I C = 10 mAde, VCE = 4.0 Vdc, f = 100 MHz) 600 -
Output Capacitance Cob pF
(V CB = 5.0 Vde, IE = 0, f = 140 kHz) - 3.0
2-396
2N30 11 (SILICON)
CASE 22
(TO·1S)
ColI.ector connected to case
MAXIMUM RATINGS
.1:=-U- Yin
56
500
V. Rise Time'" 1. 0 ns
10 +
Source Impedance = son ltV To Sampling Oscilloscope
Yin Rise Time less than 1. 0 ns '----..--...... ----I----....----~ Input Impedance =50n
Rise Time", 1. 0 ns
PW z 300 ns
Duty Cycle", 2. 0%
2-397
2N3011 (continued)
ELECTRICAL CHARACTERISTICS (TA = 2S"C unless otherwise noted)
ON CHARACTERISTICS 111
DC Current Gain hFE -
(IC = 10 mAde, VCE = 0.35 Vde) 30 120
(IC = 30 mAde, VCE = 0.4 Vde) 25 -
(IC = 100 mAde, VCE = 1. 0 Vde) 12 -
Collector-Emitter Saturation Voltage Vde
VCE(.at)
(IC = 10 mAde, IB = 1. 0 mAde) - 0.20
(IC = 30 mAde, IB = 3.0 mAde) - 0.25
(IC = 100 mAde, IB = 10 mAde) - 0.50
(IC = 10 mAde, IB = 1. 0 mAde, T A = +85°C) - 0.30
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 20 mAdc, VCE = 10 Vde, f = 100 MHz) 400 -
Output Capacitance Cob pF
(V CB = 5.0 Vde, ~ = 0, f = 140 kHz) - 4.0
111 Pulse Test: Pulse Length = 300 /lS, Duty Cycle ~ 2.0"6.
100
2.0 k
I" To Oscilloscope
Rise Time < 1. 0 no
Input R ~ 100 k
Rise Time < 1. 0 no
Pulse Width > 200 no 100
Zin = 500
2-398
2N 30 12 (SILICON)
PNPSILICON
SWITCHING
TRANSISTOR
PNP SILICON ANNULAR TRANSISTOR
!
• Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.15 Vdc@lIC= 10 mAdc
017B 1 rno
0.209
OIA
r
*MAXIMUM RATINGS iU9S
DIA1[ L&f,o
I
Rating
Collector-Emitter Voltage
Collector-Sase Voltage
Symbol
VeEO
Value
12
12
Unit
Vde
Vde
i 0.500
J
Ves
Emitter-Base Voltage VES 4.0 Vde
Collector Current - Continuous 200 mAde
&.m D"
Ie
Total Device Dissipation @TA = 25°C Po 0.36 Watts
Derate above 25°C 2.06 mWloe Pin 1. Emitter
2. Base
Total Device Dissipation @Te= 25°C Po 1.2 Watts a.Collector 0.100
Derate above 25°C 6.S5 wloe
Operating and Storage Junction TJ,Tstg -65 to +200 °e
Temperature Range
0.028
IIJRIj
2-399
2N3012 (continued)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l) VCEO(sus) 12 - Vde
(lC = 10 mAde, IB = 0)
(Emitter-Base Termination - Open Base)
Collector-Emitter Breakdown Voltage BVCES 12 - Vde
(lC = lO"Ade, VBE = 0)
Collector-Base Braakdown Voltage BVCBO 12 - Vde
(lC = 10 "Ade, IE = 0)
Emitter-Base Braakdown Voltage BVEBO 4.0 - Vde
(IE = 100 "Ade, IC = 0)
Collector Cutoff Current ICES
(VCE = 6.0 Vde, VBE = 0) - 80 nAde
(VCE = 6.0 Vde, VBE = 0, T A = +850 C) - 5.0 "Ade
Base Current IB - 30 nAde
(VCE = 6.0 Vde, VBE = 0) -
ON CHARACTERISTICS
DC Currant Gain(l) hFE -
(lC = 10 mAde, VCE = 0.3 Vde) 25 -
(lC = 30 mAde, VCE =0.5 Vde) 30 120
(lr. = 100 mAde, VCE = 1.0 Vde) 20 -
Collector-Emittar Saturation Voltage(l) VCE(setl Vde
(lC = 10 mAde,lB = 1.0 mAde) - 0.15
(lC = 30 mAde,lB = 3.0 mAde) - 0.2
(I C = 30 mAde, I B = 3.0 mAde, T A = +850 C) - 0.4
(lC = 100 mAde, IB = 10 mAde) - 0.5
SMALL"SIGNAL CHARACTERISTICS
Output Capacitance Cob - 6.0 pF
(VCB = 5.0 Vde, IE = 0, f = 140 kHz)
Input Capecitanee Cib - 6.0 pF
(VEB = 0.5 Vde, IC = 0, f = 140 kHz)
Small-Signal Current Gain hfe 4.0 - -
(lr. = 30 mAde, VCE = 10 Vde, f = 100 MHz)
Turn-On Time (VCC = 2.0 Vde, IC",,30 mAde, IB1",,1.5 mAde) ton - 60 ns
T-1-.. .
Vout toff VBB - -4.0 V Vln = +6.0 V
Pulse Width> 200 ns
Zin =50 Ohms
0.1
Vin 2.Vklr-+-r
_-'II o
To Sampling Scope
Input R;;. 100 k Ohms
":" Rise Time < 1.0 ns
2-400
2N3013
2N3014
2N30 15 (SILICON)
CASE 31
(T0·5)
2-401
2N3015 (continued)
ON CHARACTERISTICS
DC Current Gain·
(IC = 150 mAde, VCE = 10 Vde)
hFE*
30 120
-
(IC = 300 mAde. VCE = 0.7 Vde) 10 -
Collector-Emitter Saturation Voltage- VCE(sat)" Vde
(lC = 150 mAde, IB = 15 mAde) - 0.4
(IC = 500 mAde, IB = 50 mAde) - 1.0
FIGURE 1- TURN·ON TIME TEST CIRCUIT FIGURE 2- TURN·OFF TIME TEST CIRCUIT
+25 V v.. +25V
R, R,
100Q
200 ns
:"~
°LJTOQ
200Q V" .051'F 200Q
OSCILLOSCOPE OSCILLOSCOPE
< t, 2ns t,< Ins t, < Ins
R" "" 100 kQ R" "" 100 kQ
5011
200 ns
tr<2ns -=-
Ie V" R, Ie ViII V.. R,
rnA Volts ohms rnA Volts Volts ohms
2-402
2N30 19 (SILICON)
2N3020
MAXIMUM RATINGS
2-403
2N3019, 2N3020 (continued)
ON CHARACTERISTICS
DC Current Gain \11 hFE -
(IC = 0.1 mAde, VCE = 10 Vde) 2N3019 50 -
2N3020 30 100
, (IC = 10 mAc, VeE = 10 Vde) 2N3019 90 -
2N3020 40 120
(IC = 150 mAde, VCE = HI. Vde) 2N3019 100 300
2N3020 40 120
(Ie = 150 mAde, VCE = 10 Vde, TC = -55"C) 2N3019 40 -
(IC = 500 mAde, VCE = 10 Vde) 2N3019
2N3020
50
30
-
100
(IC = 1 Adc, VCE = 10 Vde) Both Types 15 -
Collector-Emitter Saturation Voltage 111 VCE(sat) Vde
(IC = l50mAde, IB = 15 mAde) - 0.2
(IC = 500 mAde, IB = 50 mAde) - 0.5
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IC = 50 mAde, VCE = 10 Vde, f = 20 MHz) 2N3019 100 -
2N3020 80
Output Capacitance Cob pF
(Vcs = 10 Vde, IE = 0, f = 1 MHz) - 12
Input Capacitance C ib pF
(V BE = O. 5 Vde, IC = O. f = 1 MHz) - 60
Noise Figure NF dB
(IC = 100 IlAdc, VCE = 10 Vde, f = 1 kHz, RS =1 kohm) 2N3019 - 4.0
111 Pulse Test: Pulse Width ~ 300 IlS, duty cycle ~ 1%
2-404
2N3021 thru 2N3026 (SILICON)
CASE1~
~
(TO·3)
PNP silicon power transistors for Class C power ampli-
fiers, high-current core switching and high-speed switching
and amplifier applications.
MAXIMUM RATINGS
2-405
2N3021 thru 2N3026 (continued)
ELECTRICAL CHARACTERISTICS (At 25°C unless otherwise specified)
Characteristics SymbDI Min Mu Unit
Emitter-Base CutoU Current lEBO mAde
(VSE = 4 Vdc) - 1.0
---
(VCE = 25 Vdc, VSE = 2 Vdc) 2N3021, 2N3024 0.2
(VCE = 40 Vdc, VSE = 2 Vdc) 2N3022, 2N3025 0.2
(VCE = 54 Vdc, VSE = 2 Vdc) 2N3023, 2N3026 0.2
--
(VCE = IS Vdc, VSE = 2 Vdc, TC = 150°C) 2N3021, 2N3024 2.0
(VCE = 25 Vdc, VSE = 2 Vdc, TC = 150°C) 2N3022, 2N3025 2.0
(VCE = 35 Vde, VSE = 2 Vde, TC = 150°C) 2N3023, 2N3026 - 2;0
--
BVCEO• 30
(IC = 100 mAde, IS = 0) 2N3021, 2N3024
(Ie = 50 mAde, IS = 0) 2N3022, 2N3025 45
(IC = 20 mAde, IS = 0) 2N3023, 2N3026 60 -
DC Current Gain
(IC = 1.0 Adc, VCE = 2 Vde) 2N3021, 2N3022, 2N3023
hFE
20 60
-
2N3024, 2N3025, 2N3026 50 180
~
e
!
~
1'--.
5
POWER· TEMPERATURE DERATING CURVE ~ .........
~
t'-..,
......
mESE TRANSISTORS ARE ALSO SUBIECTTO SAFE AREA CURVES AS
~B~k'it~ BOrn LIMITS ARE APPLICABLE AND MUST BE
i.t 5 r-..........
0
25 75 125
~ 115
TCO CASE TEMPERATURE fOe)
- r- BVe,o @ Ie 50 mA
I I
BV"", @ Ie = 20 mA I-"
.01
10 20 30 0 10 20 30 40 50 10 20 30 40 50 60
Vee, COLLECTOR EMITTER VOLTAGE (VOLTS)
Tn~~~~e~P~fa:!r;:pe~~~~r~~-:3sd:~~i~~':le~Cth~~Ec~i~!~S ct:~o; =dha!hfo:Be~~etSh::~:r~~~!!~r ~~~~:~Yc=krsO~ ~:k!~e I~~!e c~:f~!~r;.~i::= ~::a~: are
operation below the maximum junction temperature.
2-406
2N3021 thru 2N3026 (continued)
BASE·EMITTER SATURATION VOLTAGE VARIATIONS
1.4
~
--- -- - :;::.::--
0
~
w
co 1.2
~ -----..",..-
§;!
z
~. .-.- ie = 3 A
- ~
-- -- --
0
~
1.0
-
ie - I A
f----
~ ie = 0.3 A
or 0.8
~
~ ~ f-- - I - f--
r- -----
.
~
IX) 0.6 _f--
- 40°C
,;
1 -- 2Soc
-'1 ISOOC
0.4
,
10 20 40 60 80 100 200 400 600 700
i •• BASt CURRENT (rnA)
i 1.4
COLLECTOR·EMITTER SATURATION VOLTAGE VARIATIONS. 2N3021 thru 2N3023
I I I Ii I
w
~
1.2
I I
\ I
l , _J_
I
I
40 oC
~
is
~
1.0
! I
I : , , 2SOC
-·-ISOOC
=>
~
or
~
0.8
0.6
,
I
\ I
I
1
I
I
I
\ r--I'~ ..
I
:E
"I
or 0.4
I f\ \
8~
-r-
r--. \ ~ ~ ..... ie ,3, A
o
-
- -10-
ie - 0.3 A
ie I AI
,
i•• BASE CURRENT (rnA)
COLLECTOR·EMITTER SATURATION VOLTAGE VARIATIONS 2N3024 thru 2N3026
~
~
1.4
1\ ,
I
1\
w
~
1.2
\ , 1\ I' \
g 1.0
, , I
- - -40°C-
is
i \\ ~ ,
\
I'
\ - 2SoC
=>
~
0.8
\ \
, \
\
I'
l~,
\ _.- ISOoC,_
"
0.6
,,~ --...::s"
'"' 0.4 '.\ I ... "'"""
I
1-1;'
r-t -
O. 2
""- ~~ " ~ ....I"'- -i- ic,=H
0
--- -- --= ie= 0.3 A
---- ie l~ Jl
4 8 10 20 40 60 80 100 200 400 600 800 1000
1•• BASE CURRENT (rnA)
BASE CURRENT - VOLTAGE VARIATIONS COllECTOR CURRENT YS BASE·EMITTER VOLTAGE
100 10
60 6
40 4
in
0 / / / !i 2 A. ~
~ I0
Vet =2 V / VI 5-
I
Ve• = 2 V ",/ L
is
6 : 0.6
4 ~ 0.4
or
/ I t; O. 2 I /
I
ISOoC / 25°C J -40°C ~
is o. I ISOOC/ 2SoC/ /-40 C o
'-'
O. 6 ~ .06
O.4
0.2
O. I
0.2
,
0.4 0.6 0.8 1.0 1.2 1.4
.04
.02
.0 I
0.2
II J
I
2-407
2N3021 thru 2N3026 (continued)
60
150'C
--
z
i.... 50
~ Veo = 2 V
---- ~
!ij 25'C
..,='" 40
j
-40'C
r---
30
20
- r---
0.1 0.2 0.4 0.6 0.8
.Ie, COLLECTOR CURRENT (AMp)
--
16O'
.150'C
--
25'C
i 100
... ..
I
'
-4O'C ~
.., 80
-.......
~.'"
~
t---
60
40
20
0.1 0.2 0.4
'.
0.6 0.8
--- ~"'
2 4
Ie, COLLECTOR CURRENT (AMP)
.. ...... ..... ~~
""
'" I'.,..vcc:"'3V
* 1.2
2-,408
2N3021 thru 2N3026 (continued)
60 0 ....
~ COb TJ - 25°C
~40
0,
..........
S
<.>
......
.........
5is 200
~
~ 100
80
60
40
" r-.....!'-,
'" .......
0.1 0.2 0.4 0.6 4 6 8 10 20 40
REVERSE JUNCTION VOLTAGE (VOLTS)
,~
I,
+3V
t. IS M,EASURED FROM 90% POINT OF V"
2-409
2N3043 thru 2N3048 (SILICON)
1 2 4 5
NPN NPN
One Both
Side Sides
Total Device Dissipation @ T A =25'C PD 250 350 mW
Derate above 25'C 1. 43 2.0 mW/"C
2-410
2N3043 thru 2N3048 (continued)
ON CHARACTERISTICS
DC Current Gain" (1)
(lC = 10 /tAde, VCE = 5 Vde) aN3043, aN3044, aN3045
hFE
100 300
-
aN3046, aN3047, aN3048 50 aoo
SMALL·SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product IT MHz
(lC = 1 mAde, VCE = 5 Vdc, I = 20 MHz) 30 -
Output Capacitance Cob pF
(VCB • 5 Vde, IE = 0, I = 1 MHz) - 8.0
Input Impedance hie Ohms
(lC = 1 mAde, VCE = 5 Vdc, 1=1 kHz) 2N3043, 2N3044, aN3045 3.2k 19k
2N3046, 2N3047, 2N3048 1. 6k 13k
--
aN3043, 2N3044, 2N3045 oe 100
(IC = 1 mAde, VCE = 5 Vde, 1= 1 kHz)
2N3046, 2N3047, aN3048 70
Noise Figure NF dB
(IC = 10 J.lAde, VCE = 5 Vdc,
R" = 10k ohms, Bandwidth = 10 Hz to 15.7 kHz) - 5.0
MATCHING CHARACTERISTICS
DC Current GaIn Ratio" hFEl/hFEa** -
(Ie = 10J.lAde, VCE = 5 Vde) 2N3043, 2N3046 0.9 1.0
aN3044, 2N3047 0.8 1.0
2-411
2N 3053 (SILICON)
ON CHARACTERISTICS
DC Current Gain
<Ie. 150 mAde, VCE = 2.5 Vdc)
bFE
25 - -
<Ie. 150 mAde, VCE' 10 Vde) 111 50 250
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwldib Product
(IC • 50 mAde, VCE • 10 Vdc, f . 20 MHz)
Output Capacitance
fT
100 - MHz
pF
Cob
(VCB = 10 Vdc, IE • 0, f = 140 kHz) - 15
2-412
2N30S4A (SILICON)
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VeEO 55 Vdc
Collector-Emitter Voltage VeER 60 Vdc
(RBE = 100 n)
Collector-Base Voltage VeB 90 Vdc
Emitter-Base Voltage VEB 7.0 Vdc
Collector Current - Continuous Ie 4.0 Adc
Peak 10
Base Current IB 2.0 Adc
Total Device Dissipation @ T C = 25°C Po 75 Watts
Derate above 2SoC 0.43 w/oe
0.093
FIGURE 1 - POWER·TEMPERATURE DERATING [fOj
80
r-- t
70
""" I
~
~
z
0
~
ili
60
50
40
'" "'" .........
PIN 1. BASE
1. EMITTER
i5
'"w 30 " r--... All JEOEC dimensions and notes apply
"'" '"
20
~
10 CASE 80·02
o ~ TO·66
2-413
2N3054A (continued)
*OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (1) VCEOlsusl Vde
{lC = 100 mAde, IS = 01 55 -
Yin -1--
-l
I
I
--I
I
I
I
I...
APPROX 9.0 V
13 < 15 ns
0.0 5
--- Id@ VBEloff) ~ 0
12 ~ 0.0 3
TURN·OFF PULSE 0.04 0.06 0.1 0,2 0.4 0.6 1.0 2.0 4.0
2-414
2N3054A (continued)
1. 0
!z o.I~D=0.5
~ o. 5
z
~w O. 31--0.12
1-'-'
wZ
......
5~ o. 2
~~
... or
w -'
.11:::::==0.05
0.1 ~
-- "'t:;:::1""
"
8JCIt! = rlt! 8JC Plpk)
- fJUl
ffi~ 0.0 IF-0.02 8JC = 2.330 CIW MAX
~ffi 0.05
D CURVES APPLY FOR POWER
~rrmrE
~ 0.0 2 TJlpk) - TC = Plpk) 8JCII) 12 0 =.,/12
10
I. 0 5.0ms~ ~1.0ms~0.5~
~ 5. 0
~ ~
, There are two limitations on the power handling ability of a
~ 3. 0 TJ 2000 C "- transistor: average junction temperature and second breakdown.
D: 2. 0 Safe operating area curves indicate Ie - VeE limits of the tran-
13 r-- SECONO BREAKOOWN LIMITED -"\ sistor that must be observed for reliable operation; i.e., the transistor
~ 1. 01::::::
----BONDINGWIRELIMITEO I 1\ must not be subjected to greater dissipation than the curves indicate.
- - - THERMAL LlMITATION@ Te - 25 0 C T~.d8ta of Figure 5 is based on TJ(pk) = 2000 C; TC is veriable
~ O.
If--
Curves ApplV Below Rated VCEO
depending on conditions. Second breakdown pulse limits are valid
o O. 5 for duty cycles to 10% provided T J(pk) <200°C. T J(pk) may be
'-'
!:2 0.3
d~",\ calculated from the data in Figure 4. At high case temperatures,
thermal limitations -will redu.ce the power that can be handled to
0.2 values less than the limitations imposed by second breakdow.n.
ISee AN-41S).
O. 1
2.0 3.0 5.0 1.0 10 20 30 40 50 60
-
Ic/lB = 10
200
Is -; t- ITJ = 250 C
1. 0
~
@VCC - 30 Vdc
O. 5"'" If
.I
w
'-'
r-- r-..
z
w
::;;
i=
-"
0.3
0.2 \
If@VCC.- 10 Vdc
" ;:: 100
U
~ 70
........
Cib
U
O. 1 ..........
50
Cob
0.05
0.03 30
0.04 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 50 100
2-415
2N3054A (continued)
~ 100
'"~
200
70
25°C
I -- c
>
~
'"'"
"
c
~ 0.6
0.8
Ic=100mA 500 mA LOA 3.0 A
\
\
~ 50 I..--- "\. t:
f\.
..,..,c ~
:> f'..
0.4
"\. .\.
-
30 c
g
~ 20
~ --- -....., "' _ 0.2 \
\ f--
" 8 TJ = 25°C
10
V
I ~
> 0
5.0 10 20 50 100 200
liT
500 1000
0.004 0.Q1 0.02 0.04 0.1 0.2 0.4 1.0 2.0 4.0 1.0 2.0
~ +2.0
+2.5
"APPLIES FOR Ic/IB" hFE/1 IIIII 1.0
TJ = 15°C V
7'
:;;
.§ +1.5
IIIII 0.8
"eVC FOR VCElsat) V --I---
'"ffi VBElsat)I@le/IB= 10 .......
~
+1.0
~ +0.5
250Cto 11500~ I IIII .-/" 0
~
0.6 '-
w
1tn:250C- -
8 to
« /
~
:>
>-
~ -1.0
-0.5
II! / "
0
>
>'
0.4
/
I~ 7
m~~
~ -,1.5 0.1
-55 to 150°C
>-. -1.0 VCElsat)@ICIlB 10
>
<x:> -2.5 IIII III 0
0.004 0.Q1 0.02 0.04 0.1 0.2 0.4 1.0 1.0 4.0
0.004 0.01 0.02 0.04 0.1 0.1 0.4 1.0 1.0 4.0
2-416
2N3055 (SILICON)
• DC Current Gain -
hFE =20-70@ IC =4.0 Adc
• Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 Vdc (Max) @ IC =4.0 Adc
• Excellent Safe Operating Area
-MAXIMUM RATINGS
Rating Symbol Volua Unit
THERMAL CHARACTERISTICS
Cheracterlstlc
Thermal Raslstance, Junction to Case
-Indicates JEDEC Registered Data.
'Motorola guarantees this value In addition to JEDEC Registered Data.
120
g I--
f'-..
~loo
..
z
~ 80
~
~ 60
"""" ..........
'"
I 40
"-
~ 20 """" I'-...
0 ~
25 50 75 100 125 150 175 200 CASE 11
(TO-3)
TC. CASE TEMPERATURE ('CI
Safe Area Limits are Indicated by Figure 9. 80th limits are applicable and mul't be observed. Collector Connected to Ca.
2-417
2N3055 (continued)
ON CHARACTERISTICS
DC Current Gain (Note 11 hFE -
(lC = 4.0 Adc, VCE = 4.0 Vdcl 20 70
(lc = 10 Adc, VCE = 4.0 vdcl 5.0 -
Coliector·Emitter Saturation Voltage (Note 11 VCE(satl Vdc
(lC = 4.0 Adc, IB = 0.4 Adcl - 1.1
(lC = 10 Adc, IB = 3.3 Adcl - 8.0
Bas&-Emitter Voltage (Note 11 VBE - 1.8 Vdc
(lC = 4.0 Adc, VCE = 4.0 Vdcl
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (Note 11 hfe 15 120 -
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHzl
Small Signal Current Gain Cutoff Frequency fae 10 - kHz
(VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHzl
...'"z
5
3.0
2.0 / iJ
~ 70 W
0: I VCP 2.0 Vd.
SEE NOTE 1.
50 0:
TJ= 17SoC
i5g::
.,'"
<> 25°C / !-400 C
'"
<>
30
II
/
' ,
I 0:
t;
1.0 I
~ 20 w
., 0.7
::l
~ TJ = IWCJ25 0 C/ '-40°C
10 <> 0.5
7.0
!} II I II
I II
5.0
3.0
, 0.3
0.2 I
I
2.0
1.0
o 0.4
I I
0.8 1.2 1.6 2.0
0.1
o
I I
0.4 0.8 1.2 1.6 2.0
Note 1. Pulse Test: Pulse Width"" 200 "I, Duty Cycle "" 1.5%.
2-418
2N3055 (continued)
['
" '\
,
\
.I
TJ 25°C
---- -40°C-
1.0 II
\I ,
\ 1\
\ \
'i., ---]WC
SEE NOTE 1
0.8 \ , 1
i"--
--.
I \ I
5.0 Adc ~
\ I
0.6
\ ,,\:i-- 1.,_ ........ ,
-
-
'. \
0.4
0.2
- "-~ \
~": --- - -
"- '" -- -- -
)
r 3.0 Adc
~ -- It 1.0 Adc
:i1 o
10 20 30 50 70 100 200 300 500 700 1000 2000
I,. BASE CURRENT (mAl
1.4
- --
- -- --
~\ 5.0 Adc -
1.2
-
1.0 - -- -- - --- -- - - - Il.[) 3.0 Adc
0.8
--- - -- -- - ;..;...
r-- = r---- - 1.0 Adc TJ ~ 25°C
----40°C-
0.6
- - - - - r--.... r-- - --IWC-
SEE NOTE 1 -
0.4
.-
1. 0.2
~
o
10 20 30 50 70 100 200 300 500 700 1000 2000
I" BASE CURRENT (mAl
10 100
7.0
50
5.0 I 30
3.0 1 20
,/
I I ~ 10
2.0
~
~
~ 1.0
VCE - VCEO -20V
SEE NOT~ 1
1 / I 5.0
3.0
I
::>
'-'
0.7 2.0
:='" II
g
'-'
0.5 'l75°C ./
I
.!J
1.0
r:: TJ IWC
.!J 0.3 0.5
0.2 0.3 VCE ~ VCEO -20V
1IIIi~ENnl;~
I
TJ ~ 100°C ./ 0.2 100°C
REVERSE- !-+FORWARD
0.1 0.1
-0.6 -0.4 -0.2 0.2 0.4 1.0 10 100 1000 10,000 100,000
2-419
2N3055 (continued)
-
125
TJ
I
~ 175"C
I
100 1--
~ I---
1-"1- ...........
t---
1 50
l..--- ~ ."-"'"
---
40"C
~ ..........
25
.::::::
~~t--
o
---
om 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 LO 2.0 3.0 5.0 7.0 10
Ie. COLLECTOR CURRENT (AMP)
20
-- - I---
ii: 10
t-- K" i'\ ~
~ 50",
t-
iii
~
~ 2.0 f--
5.0
3.0
TJ =200·C
250", -
500",_f-
lOms -- -.:-
<-
The Safe Operating Area Curves indicate I C~V CE limits below
which the device will not enter secondary breakdown. Collector
o'"
t;
~ 1.0
)
t=--I.
j-dC -
.1 ..
Secondary Breakdown limited
F _. _. Bonding Wire limited
\" "' load lines for specific circuits must fall within the applicable Safe
Area to avoid causing a catastrophic failure. To insure operation
below the maximum T J. power-temperature derating must be ob-
8 ~ - - - Thermal limitations Te = 25 0 C served for both steady state and pulse power conditions,
~ 0.5 Pulse Duty Cycle';; 10%
~ Applicable For Rated BVCEO "\
0.3
0.2
3.0 6.0 10 20 30 60
VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
1.5
'I~ ',"-30'~VESHAPE IC = 5.0 Adc. 181 = IB2 = 0.5 Adc
f"" 150 Hz DUTY CYCLE"" 2.0%
+30 V
-g.ovLJ • I ATPOINTA
1.0 ~
-g.ov 1......""---1..-4.8,, I
0.7 ~
100
1- -Urns T -1 20
~ .... , ........
.
::l 0.5 ......... ....;. 1'-... t-
1.0W 1.0W
>=
'"z
;;
~
0.3
h;- ~~ - i.:-::
,.-
~f..:: 900
~ Hg RELAYS
100
0.2
0.1
Illill2 1
-=- -9.0 V 100
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 -4,0 V
2-420
2N3072 (SILICON)
2N3073
PNP SILICON
PNP SILICON ANNULAR TRANSISTORS TRANSISTORS
. designed for medium·speed, industrial switching applications.
t ~~
f
• Low Coliector·Emitter Saturation Voltage -
VCE(sat) = 0.25 Vdc (Max) @ IC = 50 mAdc o. j 315
0:335
0.240
f!I
• High Small,Signal Current Gain -
hfe = 180 (Max) @ IC = 10 mAdc 0'009J[
o:m
L Imii
L -nEAT1NG
C
0.500 0.016 PLANE
O.0l9 .
0.016
iJ]T9
*MAXIMUM RATINGS
STYLE 1
Rating Symbol 2N3072 2N3073 Unit Pin 1. Emitter
2. Base
Collector~Emitter Voltage VeEO 60 Vdc 3. Collector
Coliector·Sa.. Voltage Ves 60 Vdc
Emitter-Base Voltage VES 4.0 Vdc
Collector Current - Continuous Ie 500 mAde
Total Device Dissipation@TA=250e Po 800 360 mW
Derate above 25°C 4.56 2.06 mW/oe
Total Device Dissipation @Te=250e Po 3.0 1.2 Watts
Derate above 2SoC 17.1 6.85 mW/oe
Operating and Storage Junction TJ.Tstg -65 to +200 °e CASE 79(11
Temperature Range 2N3072
TO·39
1 ~r-
!
L
DlA
~UlA11
I *0
FIGURE 1 - TURN·ON AND TURN·OFF SWITCH I NG TIMES TEST CI RCUIT
+4.0 V
330
-30 V
30
68
!I
STYLE 1
Pin 1. Emitter
mUlA
4
j
0.500
0
Vin~:U-
OSCILLOSCOPE J. Collector
0.100
500pF
tr,tf~6.0ns
0.028
tr<1.0ns ~
pw. 0.5", lin ;a. 0.1 Megohm
Zin=50n
Collector Connected to Case
2N3073 CASE 22( 11
TO·18
2-421
2N3072, 2N3073 (continued)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) BVCEO 60 - Vde
(lC = 30 mAde, IB = 0)
Collector-Base Breakdown Voltage BVCBO 60 - Vde
(lC = 100/lAde, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 4_0 - Vde
(IE = 100/lAde, IC = 0)
Collector Cutoff Current ICES
(VCE = 30 Vde, VBE = 0) - 10 nAde
(VCE = 30 Vde, VBE = 0, TA = 1250 C) - 10 /lAde
Emitter Cutoff Current lEBO - 100 /lAde
(VEB = 4_0 Vde, IC = 0)
Base Current IB - 10 nAde
(VCE : 30 Vde, VBE : 0)
ON CHARACTERISTICS
DC Current Gainll) hFE -
(lC: 50 mAde, VCE : 1.0 Vde) 30 130
(lC: 50 mAde, VCE : 1.0 Vde, T A: -55 0 C) 12 -
(I C : 300 mAde, V CE : 2.0 Vde) 15
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Produet(2) fT 130 - MHz
(lC: 50 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance Cob - 10 pF
(VCB = 10 Vde, IE : 0, f: 140 kHz)
I nput Impedance hie - 1.5 k ohms
(lC: 10 mAde, VCE = 10Vde,f= 1.0 kHz)
Voltage Feedback Ratio hre - 26 X 10-4
(lC= 10 mAde, VCE = 10Vde,f= 1.0kHz)
Small-Signal Current Gain hfe 25 180 -
(lC: 10 mAde, VCE = 10 Vde, f : 1.0 kHz)
Output Admittance hoe - 1200 /lmhos
(IC: 10 mAde, VCE = 10 Vde, f : 1.0 kHz)
2-422
2N 3081 (SIUCON)
*MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 50 Vde
Collector-Ba.. Voltage VCB 70 Vde
Emitter-Base Voltage VEB 6.0 Vde
Collector Current - Continuous IC 600 mAde
Total Oeviee Dissipation@TA - 25°C Po 0.6 Watts
Derate above 25°C 3.4 mW/oC
Total Device Dissipation@Tc-250C Po 2.0 Watts
Derate above 25°C 11.5 mW/oC
Storage Temperature Range Tstg -65 to +200 °c
Generator
VBB:+30V
1.0 k
itA"
Voo
(Adjust for
VBElolI):+1.0V
~ IN3731
(~
40
Vee: -7.0 V
O'~fF
I--
=·rm=tI
Qm
1.5
ilLJ
RiseTim ... l.0ns 1.0.F /
(<»-_--l~-..,.:...--I\Nv---+--+_lV") SeOPE
Input 1.Ok ~ Inputlmpedance>1.0k Pin 1. Base
2. Emitter
Capacitance" 5.0 pF 3. Collector
51 Rise Time "1.0 ns
- 15 1 r;:1.0""~
Input at
o~-j~~-~-
+15J,~ 4\~8~9
Point "A"
ltd, tr I Itsl tf I
~ ~ 0.004 [Q45
Output ~ O%:
I
:1
I I
I
CASE 3111)
TO-5
90% Collector Connected to Case
2-423
2N3081 (continued),
OFF CHARACTERISTICS
Collector·Emitter Sustaining Voltage VCEO(sus) 50 - Vde
(lC = 10 mAde, IB = 0)
Collector-Base Breakdown Vliltage BVCBO 70 - Vde
(lC = 10 !LAde, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 6.0 - Vde
(IE = 100 !LAde, IC = 0)
Collector Cutoff Current ICEV - 10 nAde
(VCE = 35 Vde, VEB(off) = 0.5 Vde)
Collector Cutoff Current ICBO
(VCB = 50 Vde, IE = 0) - 10 nAde
(VCB = 50 Vde, IE = 0, TA'= 150o C) - 10 !LAde
Emitter Cutoff Current lEBO - 100 nAde
(VEB = 5.0 Vde, IC = 0)
Base Current IB - 10 nAde
(VCE = 35 Vde, VEB(off) ~ 0.5 Vde)
ON CHARACTERISTICS
DC Current Gain(l) hFE -
(lC = 150 mAde, VCE = O.~ Vde) 20 -
(lC = 150 mAde, VCE = 10, Vde) 30 90
(lC = 500 mAde, VCE = 2.~ Vde) 15 -
(IC = 500 mAde, VCE = 10'Vde) 20 -
Collector-Emitter Saturation Voltage(l) VCE(sat) Vde
(IC = 150 mAde,IB= 15 mAde) - 0.3
(lC = 500 mAde, IB = 50 mAde) - 1.4
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Prdduct(2) fT 150 - MHz
(IC = 50 mAde, VCE = 10 Yde, f = 100 MHz)
Output Capacitance Cob - 13 pF
(VCB = 10 Vdc, IE = 0, f =:1.0 MHz)
Input Capacitance Cib - 70 pF
(VEB = 0.5 Vde, IC = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS (S.. Figure 1)
Turn·On Time
Turn-Off Time
2-424
2N3114 (SILICON)
CASE 31
(TO·5)
MAXIMUM RATINGS
2-425
2N3114 (continued)
150 -
Vde
DC Current Gain·
(IC = O. 1 mAde, VCE = 10 Vde)
hFE
. 15
0.9
-
-
(IC = 30 mAde, VCE = 10 Vde) 30 120
(IC = 30 mAde, VCE = 10 Vde, TA = -55·e) 12 -
Collector Cutoff Current ICBO /LAde
(VCB = 100 Vde, IE = 0) - 0.010
(VCB = 100 Vde, IE = 0, T A = 150·C) - 10
2N3115 (SILICON)
2N3116
For Specifications, See 2N2958 Data
2-426
2N3120 (SILICON)
2N3121
PNP SILICON
TRANSISTORS
PNP SILICON ANNULAR TRANSISTORS
II
• Low Coliector·Emitter Saturation Voltage - 0.016 01A MiN
0.019 ~
VCE(sat) = 0.25 Vdc (Max) @ IC = 50 mAdc
CASE 79
TO·39
*MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Symbol
VCEO
2N3120
45
2N3121 Unit
Vdc
:::: DlAll
l 0.'00
iilllI
DlA n
r
0.170
4
Collector-Base Voltage VCB 45 Vdc
Emitter-Base Voltage VEB 4.0 Vdc 0
0.028
0]48
2-427
2N3120, 2N3121 (continued)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) BVCEO 45 - Vde
(lc = 30 mAde, IB = 0)
Collector-Base Breakdown Voltage BVCBO 45 - Vde
(lC = 100 )lAde, IE = 0)
Emitter-Base Breakdown Voltage BVEBO 4.0 - Vde
(IE = 100 )lAde, IC = 0)
Collector Cutoff Current ICES
(VCE = 30 Vde, VBE = 0) - 10 nAde
(VCE = 30 Vde, VBE = 0, T A = 1250 C) - 10 )lAde
Emitter Cutoff Current lEBO - 100 )lAde
(VEB = 4.0 Vde, IC = 0)
Base Current IB - 10 nAde
(VCE = 30 Vde, VBE = 0)
ON CHARACTERISTICS
DC Current Gain(1) hFE -
(lC = 50 mAde, VCE = 1.0 Vde) 30 130
(lC = 50 mAde, VCE = 1.0 Vde, T A = -55 0 C) 12 -
(lC = 300 mAde, VCE = 2.0 Vdel 15 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(I C= 50 mAde, I B = 2.5 mAdcl - 0.25
(lC = 300 mAde, IB = 30 mAde) - 0.5
(lC = 500 mAde, IS = 50 mAdel - 1.0
Base-Emitter Saturation Voltage VSE(sat) Vde
(lC = 50 mAde, IB = 2.5 mAde) - 1.2
(I C = 500 mAde, I B = 50 mAde) - 2.0
Base-Emitter On Voltage VBE(on) - 1.2 Vde
(lC = 50 mAde, VCE = 1.0 Vde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product(2) IT 130 - MHz
(lC = 50 mAde, VCE = 20 Vde, f = 100 MHz)
Output Capacitance Cob - 10 pF
(VCS = 10 Vde, IE = 0, I = 140 kHz)
Input Impedance hie - 1.5 k ohms
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Voltage Feedback Ratio hr. - 26 X 10-4
(lc = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Small-Signal Current Gain hIe 25 180 -
(lC = 10 mAde, VCE = 10 Vde, I = 1.0 kHz)
Output Admittance hoe - 1200 J.lmhos
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
SWITCHING CHARACTERISTICS (Figure I)
Turn-On Time ton - 40 ns
(lC~300 mAde, IBI ",,30 mAde)
2-428
2N3127 (GERMANIUM)
MAXIMUM RATINGS
Operating & Storage Junction Temperature TJ, Tstg -65 to+ 100 °c
2-429
2N3127 (continued)
TABLE I - GROUP A INSPECTION (T ... =: 2S-C unless otherwise noted) (lTPO applies to JAN 2N3127 only)
MIL·STD·7S0 Limits
Examination or Test Symbol Unit LTPD
Method Min Max
SUBGROUP 1
SUBGROUP 2
DC Current Gain
(IC = 3 mAde, VCE = 10 Vde)
3076 hFE
20 100
-
Base-Emitter Saturation Voltage 3066 VBE(sat) Vde
(Ic = 5 mAde, IB = 1 mAde) Condition A - 0.6
SUBGROUP 3
- 1.2
pF
SUBGROUP 4
• Measured in a guarded circuit, such that the can capacitance is not included.
f Applies to JAN unit only.
2-430
2N3127 (continued)
MIL·STD·7S0 limits
Examination or Test Symbol Unit LTPD
Method Min Max
SUBGROUP I
SUBGROUP 2
Solderability
(Omit aging)
2026 - - - -
Temperature Cycling
(Thigh = 100:a °C)
1051
Condition B
- - - -
Thermal Shock (Glass Strain) 1056 - - - -
Seal (Leak Rate).· ..
Condition A
Condition C,
- - 10-7 atm
eels
15
Procedure
mao
Condition B
for Gross
Leaks
Shock
(Non-operating; 1500 Gj 5 blows of 0.5 ms each in
2016 - - - -
Orientations Xl. YI. Y2. and Zt)
(total = 20 blows)
Vibration Fatigue
(Non_operating; 20G)
2046 - - - - 15
SUBGROUP.
SUBGROUP S
2-431
2N3127 (continued)
MIL·STD·750 Limits
Examination or Test Symbol Unit LTPD
Method Min Max
SUBGROUP 1
SUBGROUP 2
Output Conductance 3216 Re(h oe ) rumhas
(IC 2 mAde, VCE = 6 Vde, f ~ 30 MHz) 1.0 3.5
Input Conductance
(IC = 2 mAde, VCE ~ 6 Vde, f ~ 30 MHz)
3221 Re(Yie)
1.25 5.0
mmhas ) 10
:t: Group C tests shall be performed on the initial lot and every six months thereafter.
FIGURE 1- TEST CIRCUIT FOR POWER GAIN AND NOISE FIGURE FIGURE 2- TEST CIRCUIT FOR COLLECTOR·BASE TIME CONSTANT
SHIELD
I
I
I
0.1 p.F
OUTPUT
INPUTr
f~31.8MHZ=- HIGH IMPEDANCE
VOLTMETER
I
-Vee
0001 Jlf
L, .
T, .
... JA. in. 10, Ij2 in. long, 5 tUrns
#20 solid copper wire, center tapped
~ rn dla, close wound, 3 turns #26
=- roo"" O.I"F O.1"F
solid copper wire, 1: 1 ratio bi-filar
wound .
. . . high quality piston type capacitor. 3.9"H
2-432
2N3133 thru 2N 3136 (SILICON)
CASE 22
(TO-18)
2N3133 2N3135
2N3134 2N3136
Collector connected to case
MAXIMUM RATINGS
2-433
2N3133 thru 2N3136 (Continued)
2-434
2N 3137
(SILICON)
MM1803
CASE 31
(TO-5)
MAXIMUM RATINGS
250 MHz POWER GAIN TEST CIRCUIT (2N3137) 250 MHz POWER GAIN TEST CIRCUIT (MM1B03)
L-J"Y,n....._...r.., Z out
= 50
2-435
2N3137, MM 1803 (Continued)
*MAXIMUM RATINGS
Rating Svmbol Value Unit
Collector-Emitter Voltage VCEO 20 Vdc
Collector-Base Voltage VCB 20 Vdc
Emitter-Base Voltage VEB 4.0 Vdc
Collector Current IC 200 mAde
Total Device Dissipation@TA = 2SoC Po 360 mW
0.209
Derate above 2SoC 2.06 mW/oC 0.230
F
DlA
Total Device Dissipation @TC=250C Po 1.2 Watts
~o
Derate above 2SoC 6.85 mW/oC
Operating and Storage Junction T J,Tstg -65 to +200 °c
I ~o
Temperature Range
1
'"Indicates JEDEC Registerad Data.
0.500
m
J
FIGURE 1 - SWITCHING TIME TEST CIRCUIT
DiA
VBB -2.0 V
STYLE 1
Pin 1. Emitter
2. Base
100 62 3. Collector 0.050
0.100
0.1 MF 2.0k rv t - - - - - O Vout
V;"~
Pulse Source
~
To Sampling Scope
AiseTime<1.0ns 100 Input Z "'" 100 kn 0.028
PW>200 ns Rise Time < 1.0 ns 0.048
Zin '" 50 n
2-437
2N3209 (continued)
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
2-438
2N321 0 (SILICON)
CASE 22
(TO-IS)
MAXIMUM RATINGS
+7.0V
2-439
2N3210 (continued)
, -"
ON CHARACTERISTICS
DC Current Gain' (11 hFE -
(IC = 10 mAde, VCE = 1. 0 Vde) 30 120
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IC = 20 mAde, VCE = 10 Vde., f = 100 MHz) 300 -
Output Capacitance Cob pF
(V CB = 10 Vde, IE = 0, f = 100 kHz) - 6.0
Turn-On Time t ns
on
(VBE(off) ~ 0.2 Vde, IC = 200 mAde, IB1 = 40 mAde) (Figure 2) - 40
Storage Time t ns
s
(IC ~ IB1 ~~2 ~ 20 mAde) (Figure 1) - 20
1
OUTPUT TO
SAMPLING OSCILLOSCOPE
Rise Time ~ 1.0 ns
200 50 n Input Impedance
PW~200ns
-4.0V
2-440
2N3211 (SILICON)
ON CHARACTERISTICS
DC Current Gain' (I) I hFE -
(IC = 100 /lAde, VCE = 1. 0 Vde) 20 -
(IC = 1.0 mAde, VCE = 1.0Vde) 50 -
(IC = 10 mAde, VCE = 1. 0 Vde) 50 150
(IC = 10 mAde, VCE = 1.0 Vde, TA = -55'C) 20 -
(IC = 50 mAde,. VCE = 1. 0 Yde) 40 -
(IC = 100 mAde, VCE = 1. 0 Vde) 30 -
(IC =' 500 mAde, VCE = 5.0 Vde) 10 -
Collector-Emitter Saturation Voltage 111 Vde
VCE(sat)
(IC = 10 mAde, IS = 1. 0 mAde) - 0.2
(Ic = 50 mAde, IS = 5.0 mAde) - 0.3
(IC = 100 mAde, IS = 10 mAde) - 0.4
(I) Pulse Test: Pulse Width ~ 300 /lS, Duty Cycle ~ 2. 0%.
2N3211 (continued)
Input Capacitance C ib pF
(V BE : 0, 5 Vde, IC : 0, I: 100 kHz) - 7,0
O.l"F
t,~ 1.0 ns
V;'~
Oscilloscope tr ~ 1 ns
Z'o"" 50 ohms Z'o"" 50 ohms
-IOV
50
+llV
+ 3,Q Vdc
SLOV
100
300 10 ns MAXl ~ -L
PULSE AT A
IS,O k
r - - -...."""'-1~-....-O SCOPE
Jl.:S,QV Vout
SOD 50
INPUT
SIGNAL TA = TRE ='I"FE
+6,QV
TRE""
ill
-l tr
cs
- - - - - - GROUND PLANES
2-442
2N3232 (SILICON)
2N3235
CASEll~
NPN silicon power transistors designed for switch-
ing and amplifier applications,
(TO-3)
MAXIMUM RATINGS
120
'2
d
100 ~
~
0:
.~
d 80
~
.S<
'"
~ ......
is'" 60
...............
...
............
a"
~ 40
Po.
.............
0 20 i'....... .......
~200
Po.
o
o 25 50 75 100 125 150 175
T C ' Case Temperature (oC)
2-443
2N3232, 2N3235 (continued)
2-444
2N3244 (SILICON)
2N3245
CASE 31
(TO-S)
MAXIMUM RATINGS
2-445
2N3244, 2N3245 (Continued)
Input Capacitance 5 C ib pF
(VOB = 0.5 Vde, IC = 0, f = 100 kHz) - 100
2-446
2N3244, 2N3245 (Continued)
r T
-
2.0
125°C
IV _
1.5
25°C
I 75°C
-.....;
--- . ~.,..
- - 2V
I
f-
,- .......:'" "'~.
15°C
~ ="'.. ... 2JOC-f-
'II ' - f -
i 55°C
~ ~
1i
z: 0.5
,.,\,: ~
0.2
50 100 200 500 1000
Ie, COllECTOR CURRENT (IlIA)
in 1.4
~
0
~
~
2N3244 _
1.2
'""" \ .T, = 25°C
~
0
>
1.0 le=50mA Ie = ISO mA Ie = 500 mA \ , e = 750mA
'":=
:i
:l: 0.8 \ \. "- ............
~
\ "- ......... -
0
u
::E
::>
::E
~ 0.4
::E
1:& 0.2
0.6
....
"- .......
I-
-- r--
1.4
~
0
I
2N3245 -
..
~
~
1.2 T, = 25°C _
'"
~
0
> \ ~50mA
--
1.0 50 mA ISO mA
'":= \500mA
:i I"'
~ 0.8
f3~
c5 0.6
<..>
\ , ...........
I""'-...
::E
::>
\ I" 1-1-1-
r-...
'"
::E
~ 0.4
::E r--
IJ 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
I" BASE CURRENT (mAl
2-447
2N3244, 2N3245 (Continued)
o -2 0~~-2~0~0-~~40~0-~~60~0-~~80~0~~~1000
50 100 200 500 1000
Ie. COLLECTOR CURRENT (mA) Ie. COLLECTOR CURRENT· (InA)
~fl. fl. 20
12o 30
Cie. fl. 30 -
lloO ........ {J. 20
...............
20
10
0.1 0.2 0.5 1.0
....
C.. I""-
r...
2.0 5.0 10
r-- 1--
....
20 30
~
;:: SO
60
40
20
o
100
"!lS.
t..'1'0
-
200
10
,.........fJ.
300
10
400
. '0
600 BOO
Ie. COLLECTOR CURRENT (rnA)
REVERSE BIAS (VOLTS)
20
t~ ~goc
FIGURE 7 - CHARGE DATA
--LIMIT Q,2N3244
+
2V
l-f -lOV
5911
10 Veo 30V
-'-TYPICAL .... ~ SCOPE
Q, -10.75VU 200 Il
~ 5.0 ... PW = 200 ns
RISE TIME ~ 2 ns
~::::: l--'[ DUTY CYCLE = 2%
ii3 2.0 ." II, 2N3245 Q.2N324~t::'
0- 2N3244 ~
~ F"'" ~
1.0
0-
S
50 100 200 500 1000
I.. COLLECTOR CURRENT (mA)
IN916
DUTY CYCLE = 2%
+3V
FIGURE 10 - QT TEST CIRCUIT
FIGURE 11 - TURN·OFF WAVEfORM
C_~
~~~=~
-lll .J 1. 10.,
=2%
DUTY CYCLE
1200 pi ma. lot 2N3245
1400 pi ma. 'Dr 2N3244
2-448
2N3248 (SILICON)
2N3249
Y~3t~r-o
200
~ t-- .... IleL1011"ll~LI
100 Vcc 3V, V.. 0.5V
Y,
T, 25°C
....j I- 300.0
DUTY CYCLE =2" 50 t.
FIGURE 2 - t... CIRCUIT ~t, (10 VI
ov'_ml" I
D---'--
Yee
>---......+-1: -1_
..,-. C.
~
~
~~
....
to-.!'-
~
t, (3 VI
-l I, I-- I.SII .-1
~
I:~~~;'" - -
Ie Vcc Ita lie esc-I· V.. V, V. V,
InA volts oIHns oIHns pF volts volts valts volts 2
10 3 10K 215 4 +0.5 -10.6 -10.9 +9.1 1 10 20 50 100
.
100 1K 10 95
T.... _ _ ltoaceol_JlallldccnlllClOn.
12 +0.5 -10.7 -11.3 +8.7 leo COLLECTOR CURRENT (mAl
2-449
2N3248, 2N3249 (Continued)
Storage Time
~ = 100 mA, IBI = IB2 = 10 mA, 2,3 ts - 60 ns
Fall Time CC = 10 V tr 20 ns
2-450
2N3248, 2N3249 (Continued)
T, 125°C 2N3248
Vel:;:: 1 V
1 1
....... .....
50
T, = 25°C
I - ....... ~
..............
-
z
T, 115°C \.
~
.... ~
i ............
,
~
=>
<>
i
20
TJ = _55°C
- ..............
...........
........
i'~
\
"'- r-...
i'"
10
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Ie. COllECTOR CURRENT {mAl
200
T, I 12loc ~NJ24~
Vel = 1 V
r-
100
~ T,I= 25
T,
1c
15°C
-
.............
" ......
r-...."
,
I-- \i\
i' 1\[\
- r-r-...
TJ ;::: -55°C
I\~
'r-. r-.
20
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Ie. COLLECTOR CURRENT (mAl
1\11 /~ .J1
-- -
1000
aT. f3r. 10 r--..... ....... 1'-...1"-
g Q,,{jF 40 lOa::> Cob
.........
~ 500 .......
~
pc:;: t..... i"""'" ~ ... Cib
--
--"25 O C ....... r--:
200
100
~
......
1::=:::::::
-- Vee
i--"': V
10 V = a,
Vee
II U
..llJ.l.
....H1
3V
~.
--
.....
t""" ...
40 4
I 10 20 50 100 0.1 0.2 0.5 1.0 2.0 5.0 10
Ie. COLLECTOR CURRENT {mAl REVERSE BlAS (VOLTS)
2-451
2N3248, 2N3249 (Continued)
4 \ \ :\ i'-...
r--
~
\, 1\
roo. .......... ~ r... '-
2
"- '- ........
1.0
1\
2N3~-
~
'"
0.8
Ie = 3 mA le=IOmA le=30mA
1\
'1 le= 50mA
\
le= 100mA
T, = 25.C
~
~ \
~
0.6
\ I\. I"
~
Iii
IIu
~
i! 0.2
i
0.4
"- "-
"",
" t-..
'"" r.....
'-
",...
r--
IJ
o
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
I~ BASE CURRENT (mAl
&1.0
t.2 r- t=IO
' - - ' =25OC ..I
MAX V.looI' L....
O.51-- IvcLaL I 1
,
(25·C TO U5·C)
I -1
0.2 -2
o -2.5
o
I W 20 ~ ~ 50 ~ ~ ~ ~ ~
I 2 10 20 50 100
I.. COlLECTOR CURRENT (mAl Ie COLLECTOR CURRENT (mAl
2-452
2N3250, A (SILICON)
2N3251, A
CASE 22
(TO-18)
Collector connected to case
MAXIMUM RATINGS
2-453
2N3250, A, 2N3251 I A (Continued)
Input Capacitance
(VeB = 1 Vdc, IC = 0, f = 100 kHz)
C1b -- B.O pF
----
Current-Gain - Bandwidth Product 2N3250, 2N3250A 250
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MHz
2N3251,2N3251A 300
2-454
2N3250, A, 2N3251, A (Continued)
Delay Time td 35 DS
(Vee = 3 Vde, VBE =0.5 Vdc
Ie =10 mAde, lsi = I mAl
Rise Time tr 35 ns
2N3250,2N3250A 175
Storage Time ts ns
(lsi =IB2 = I mAde 2N3251,2N325IA 200
Vee = 3Vl
Fall Time tf 50 DS
FIGURE 1 - DELAY AND RISE TIME FIGURE 2 - STORAGE AND FALL TIME
500 500
I
I\. TJ = 25°C
Ic= 101., -
• TJ - 25"C
ie-lOla, = lOla
V... =O.SV Vcc-3V
200 ~ 200
"' '-
, ~
I"
t,.@Vee =3V f- I-
I I
"
"" r"
!" t,. =10V
"' ~
@ Vee
t,
20
" ~
~ "
20
10
~ I\..
........ '"r-... 1""0
10
"""
"'
5 10 20
'" " 50 5 10 20 50
Ie. COllECTOR CURRENT (mAl Ie. COllECTOR CURRENT (mAl
2-455
2N3250, A, 2N3251 I A (Continued)
\.
I IJ.
le~ lOmAI
1\ il
........ SOORCE RESISTANCE ~ 4.3 K II IJ
...... Ie ~ 10,.A le~ 10,..\
V
'I /)
SOUiCE RESISTANCE ~
le~ 100,..\
tS - K
o
100 200 400 1K 2K 4K 10K 20K 40K lOOK 100 200 400 1K 2K 4K 10K 20K 40K lOOK
f. FREQUENCY 1Hz) R•• SOURCE RESISTANCE (OHMSI
h PARAMETERS
Ve. = lOV. f = 1 kHz. T. = 2S'C
FIGURE 5 - CURRENT GAIN FIGURE 6 - OUTPUT ADMITTANCE
400 200
100 ".
200
, i---"r-"
~ JAN 2N3251A
so
=
-
I--
I--
f-
2N3251,2N3251A
JAN 2N3251A
./ ./
V ~ 1 20 ./
V
20 ~ " "" 10
I'
'"
2N3251 , 2N3251A
1
:3
M
10
"~ " 2N3251, 2N3251 A
JAII2N3251A
i
::5
5.0 ,.....
...... JAN 2N3251A
"-
.J •
ii: 2N3250, 2N325OA~ I'
2.0
"
....... JAN 2N325OA
5.0
.........
2.0
0.1 0.2
2N3250, 2N325OA
I JAII12~~m
0.5 10
r......
2.0
Ie: COLLECTOR CURRENT" (IlIA)
-- - 5.0 10
1.0
0.5
0.1 0.2 0.5 1.0 2.0
Ie. COLLECTOR CURRENT (IlIA)
5.0 10
2-456
2N3250, A, 2N3251 I A (Continued)
.......
z
$ 1.0
TJ ~ loc i'.. r-...
; TJ ~ ~~~oc
~,
~
.:""'!
I r-T
NORMALlZ£DAT Ie = 10 mAo Ve• = I V
74 - 2N32~0. 2N3250A. JAN 2N32~OA
TYPICAL h" ~ 2N3 2N32t' JI 2Nr'r
0.2
0.1 0.2 O.~ 1.0 2.0 ~.O 10 20 ~o
Ie. COLLECTOR CURRENT ImAl
:.,
TJ ~ 25°C
This graph shows th.e effect of base current on colle.ctor current: fio is the
current g~," of the transistor at 1 volt, and f3F (forced gam) is the rattO of Ic/isF
In a circUIt. EXAMPlL for type 2N3251. estimate a base current 11,,1 to Insure
saturation at a temperature of 25°C and a collector current of 10 rnA.
Observe that at Ie ~ lOrnA an overdrive factor of at least 2.5 is required to
drive the transistor well into the saturation region. From Figure 9, it is seen that
~OrnA
~~
h,,@ 1 volt IS typically 1671guaranteed limits from the Table of Characteristics
/30 rnA can be used for "worst-case" design) .
167
2 2.5 ~ lOrnA/I"
0
lOrnA'
I
3t. . I,,:::: 6.68 rnA typ
3
'7f;. OVERDRIVE fACTOR
0.8
pi, ~\0
-TJ = 25°C
V"I'::J,. ,,/
......
i'
O.S !I
9ve for VeE' ... }
25°C tt 125 0
,.
; -
w 0.6
~
,.
P
-SSOC to 2S0C
YV
'" -O.S
-
~ § ." 9v,forV.. -
~
z: isu i"'" _I--r- -
2
:i:::> 0.4 ..: -1.0
tl:I
0
- WCtOJ2S~
L
.......
~
'-'
-1.5 ~~
VeE I..'} _I-" ?"
~
0.2
-2.0 - -55°C to 25°C
-2.5 I I
10 20 so o 10 20 30 40 50
Ie. COLLECTOR CURRENT (mAl Ie. COllECTOR CURRENT (mAl
2-457
2N3250, A, 2N3251 , A (Continued)
!
.
%
~
z:
/ '\
r--.....
200
-....... .......
I~ ~
z:
~
§
I t--. rit'CC
1700 35 pI V, x 100
mmhos
2.2Ko 3 pF
<.>
.; '"
'"
a 100
~ .:: Vee = 20V
TAl = 25~C
o
o 10 15 20 25 30
Ie. COLLECTOR CURRENT (mAdel
20 1000
TJ ~2JOC - Vcc=10V
LL
---Vee=3V I
t-- t-- PF = 10
500 I-- t-- TJ = 2S OC It:
1
10 I,L
.......
~
........
..
~
..... 200
Q,.
~ ~
.
....
Cob ~-
~r-...
" r--..
.... r--!"o
'" ..... r--!"o
100
Ci• I'"
i'. 50 L
1-- I"
20 ~-
0.1 0.2 0.5 1.0 2.0 5.0 10 1 5 10 20 50
REVERSE BIAS IVOLTS) Ie. COlLECTOR CURRENT (mAl
2-458
2N3252, 2N3253
(SILICON)
2N3253 JAN AVAI LABLE
2N3444
2N3444 JAN AVAILABLE
9JC 35 °C/W
Thermal Resistance:
9JA 0.175 °C/mW
2-459
2N3252, 2N3253, 2N3444 (continued)
---
(Ie; 10 /lAde, IE ; 0) 2N3252 60
2N3253 75
2N3444 80
---
(IC = 1 Ade, VCE ; 5 Vde) 2N3252 25
2N3253 20
2N3444 15
2-460
2N3252, 2N3253, 2N3444 (continued)
_ 1.4
g 2N3252
~ 1.2 r--
\ 1\
i
~ 1.0 \ \
T, = 25°C
5 1 \
::>
10= l00mA 10= 250 mA \ 10=500mA 10= 750mA
-
55 0.8
\ \
'"
~!'!~
_
~
0.6
I'
\
r-...
......
i--
-- !0-
---
::IE 0.4
~
oJ 0.2
2 4 6 7 .8 9 10 15 20 30 40 50 60 70 80 90 100 150 200
I.. BASE CURRENT (mAl
\ \
~ 1.2
\
2N3253
T, = 250C -
i
~ 1.0 ,
\
~
10= loomA le= 250 mA Ie = 500 mA 1c=750mA
~ 0.8
\ I"
O~
_
~
0.6 ~
i'
'\...
-- r--
:IE
~ 0.4
'-.
.J 0.2
2 4 6 7 8 9 10 15 20 30 40 50 60 70 60 90 100 150 2DO
It. BASE CURRENT (mAl
;;; 1.4
!:;
g \
2N3444
• 1.2
T, = 25°C
f--
~
>
~ 1.0
\
le= lDOmA
i 10= 250mA le= 5DOmA \1.= 750mA
~ 0.8 1\
i"""
~
i 0.6
\
\
"-
" .............
IIi
J
0.4
"
0.2
2 4 6 7 8 9 10 15 20 30 40 50 60 70 80 90 100 150 2DO
I.. BASE CURRENT (mA)
2-461
2N32 52, 2N3253, 2N3444 (continued)
70
MINIMUM CURRENT GAIN CHARACTERISTICS
50
T, 125'C
- r--:....- "' . 1 2N3252
VCE = 1V
_
~
~
T, 25°C -VeE 2V
~ ...
T,
T,
15°C
55°C --
"' ..... "-
---.. I"-...r-.."'"" ~"" ~
~,
50 60 70 80 90 lOa 200 300 400 500 600 700 800 900 1000
Ie. COLLECTOR CURRENT (mA)
70r---r-~--.--r-.--------r-----r----r---r-----r----r-~r--~1~1r-~T~
50 c==r==t=""F""+'7"""'7:;;:-+--==*=::::::~:;:;::-::±------t----j_-+_+ll
I T 125°C ~- ...... J
2N3253 -
VeE = 1 V
5~--~~--~~~--------~----~--~--~----~----~--~~--~~~
50 60 70 80 90 lOa 200 300 400 500 600 700 800 900 1000
Ie. COLLECTOR CURRENT (mA)
70
50 1 'N3444 _
-- -::..::::
VeE -1 V
T, 125°C -VeE 2V
z
;;: 30 ~-- .......
'"
~ -"':::::: ........
i
T, 25°C
~ 1-.,.......
20
- r-- ~"
--""
T, _ 15°C
~
'z"
"
j 10
T, _ 55°C
~~ ~ ~
...... ...
......
5
50 60 70 80 90 100 200 3D!) 400 500 600 700 800 900 1000
Ie. COLLECTOR CURRENT (mAl
t- I:, ...,~tt
.... f .... ~
,8, 20
-- - --
70 70 Vee = 30 V
1-- 1'\ _ _ 25°C TJ
~,8,=2rl ~. f;;
-;
.s
50
L.. I~ 1"1, .. -;
.s
50
'" I!.
~
_125°C TJ
--
.... ....
'"
;:: r\" I-- rT I'-of-.,I ... '";:: fI' - 10
~ [":: t....... I·
....
co
<
'"
0
30
~
~
~~
,8'1'10
..... "'r-. '-'
~
~
30
-......;
~ C"-
~- l-
1"-- ....... t--.....
.- I--~
In 20 111 =1.1 ~
"""" I", I, -1/81'_1 20
........
,:
t:::" -
- - - 25°C
--125°C
r- t-
10
I I 10
50 70 100 200 300 500 700 1000 50 70 100 200 300 500 700 1000
Ie. COLLECTOR CURRENT (mA) Ie. COLLECTOR CURRENT (mA)
2-462
2N3252, 2N3253, 2N3444 (continued)
TYPICAL TURN-ON TIME VARIATIONS WITH VOLTAGE TYPICAL RISE TIME VARIATIONS WITH TEMPERATURE
100 100
(J,=10 Vee 30V:f:
70 TJ = 25°C 70 (J, 10
'- ~
-=25°C
50 '-~ 50
r-....
1'1" j ~ t,
_125°C
oS
I
~ 30
I" I"... ~
...;:: 30
~
'~
"~r.. I" ~ t'.....
- ~ee~~~ '"
~
;:: Ii:
20 t"- ........ t, ~ 20
_!'o..
....... ~
Vee = 30V ~ .~~...
T}=
-MAX
J5O~ 7000
f--
I-
Vee' 30 V
le= 10 I~ 1/
100 ~
- - - TYP
5000
I- TJ= 250 C
V / T(12~oC-
TJ=125 0
< /.
/~ ~N3253, 2N3444
r;:
....e.....z
70
50
....
!"0-
-
C,.
r--
~
g 2000
3000
/
/ I7/
V
I?'
~
..I~ 72N3252
~
....
c
!1c
u 30
... I 1000
V/ I' IAV
//
700 . /
20
~ .... U
1"- .....
..... r.. r-..... .........
Cob
500
a..
~ '"
r.. .... ......... 300
10
8 200
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 50 70 100 200 300 500 700 1000
REVERSE BIAS (VOLTS) I.. COLLECTOR CURRENT (rnA)
V
1.8 2.0
j,.o~"" t7
II 11
....
.g
0.5
- ;
--
~ 0.8
~
~ 0.6
:i 0.4
MINV"I••tl
~ t::::
I.-'
L.,..; Vlol
S
u
~ -0.5
8
-1.0
~•• fO~V~ F'"'"
~
125 0 Cj!5
1'1
~ ~55°C TO 25°C
V
0.2
o
MAX Vee 1"'1 2N3252
-1.5
-2.0
. .:v-r
50 70 100 200 300 500 700 1000 o 200 400 600 800 1000
Ie, COLLECTOR CURRENT (mA) Ie, COLLECTOR CURRENT (rnA)
2-463
2N3279 thru 2N3282 (GERMANIUM)
CASE 20
(10·72)
MAXIMUM RATINGS
Rating Symbol 2N3279 2N3281 Unit
2N3280 2N3282
Collector-Emitter Voltage VCEO 20 15 Vdc
POWER GAIN AND NOISE FIGURE Jersus COllECTOR CURRENT NEUTRALIZED POWER GAIN AND NOISE FIGURE versus
_MHz FREQUENCY
!50
COMMON EMITlU V.. = 10 V,
20
Ie =3 IlIA
25
_40
........
~ 20 1-::;;_=f!5e;!!";:;:;;l~~lb~~~ III
~.
............
i 15~~~~~-4~~-4~~~~~~ i 30
I"'-....
r..
i
f
J
10 120
Ii J
10
-a. """.- ............
_/
J;
r-....
r..
o
,..:~ !If
-' .......... o
4 6 10 20 40 60 100 200 400 600 1000 2000
2-464
2N3279 thru 2N3282 (Continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BV CEO Vdc
(IC = 2.0 mAdc, IB = 0) 2N3279, 2N3280 20 - -
2N3281, 2N3282 15 - -
Collector-Emitter Breakdown Voltage BV CES Vdc
(IC = 100 /.LAdc, VBE = 0) 30 - -
Collector-Base Breakdown Voltage BV CBO Vdc
(IC = 100 /.LAdc, IE = 0) 30 - -
Collector Cutoff Current I CBO /.LAdc
(VCB = 10 Vdc, ~ = 0) All Types - 1.0 5.0
(V CB = 10 Vdc, IE = 0, TA = +55°C) 2N3279, 2N3280 - - 50
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 3.0 mAdc, VCE = 10 Vdc) 2N3279, 2N3280 10 - 70
2N3281, 2N3282 10 - 100
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 5. 0 mAdc, IB = 1. 0 mAdc) 2N3279, 2N3280 - - 0.3
2N3281, 2N3282 - - 0.5
Base-Emitter Saturation Voltage Vdc
VBE(sat)
(IC = 5.0 mAdc, !B = 1. 0 mAdc) 2N3279, 2N3280 - - 1.0
2N3281, 2N3282 - - 1.5
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth' Product fT MHz
(IC = 3.0 mAdc, VCE = 10 Vdc) 2N3279, 2N3280 400 500 800
2N3281, 2N3282 300 400 800
Maximum Frequency of Oscillation f MHz
max
(IC = 3.0 mAdc, VCE = 10 Vdc) - 2000 -
Output Capacitance* Cob* pF
(V CB = 10 Vdc, IE = 0, f = 100 kHz) 2N3279 - 0.9 1.0
2N3280 thru 2N3282 - 1.0 1.2
Small-Signal Current Gain hfe -
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 1. 0 kHz) 2N3279, 2N3280 10 - 100
2N3281, 2N3282 10 - 150
Collector-Base Time Constant r
b
'c c ps
(IE = 3.0 mAdc, V CB = 10 Vdc, f = 31. 8 MHz) 2N3279, 2N3280 3.0 5.0 10
2N3281, 2N3282 3.0 5.0 15
Noise Figure NF dB
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 200 MHz) 2N3279, 2N3280 - 2.9 3.5
2N3281, 2N3282 - 4.0 5.0
FUNCTIONAL TESTS
Power Gain G dB
pe
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 200 MHz) 2N3279, 2N3280 17 - 23
2N3281, 2N3282 16 - 23
Power Gain (AGC)** Gpe(AGC)** dB
(IC = 20 mAdc, VCE = 5.0 Vdc, f = 200 MHz) 2N3279, 2N3281 - - 0
2N3280, 2N3282 - 0 -
*C ob is measured in a guarded circuit such that the can capacitance is not included.
**AGC is obtained by increasing Ie' The ·circuit remains adjusted for V CE = 10 Vdc and IC = 3.0 mAdc
operation.
2-465
2N3283 thru 2N3286 (GERMANIUM)
CASE 20
(TO·72)
MAXIMUM RATINGS
NEUTRALIZED POWER GAIN AND POWER GAIN AND NOISE FIGURE versus
50
NOISE FIGURE versus FREQUENCY COLLECTOR CURRENT 200 MHZ
20
COMMON EMIHER V" = 10 V Ie = 3 mA 30 1
COMMON EMITTER I
40 "- 16 25
neulrallzallonand lunmg set at IldVI /
Vel = lOY, Ie :::" 3mA)
............ rY
r-...... ~ 20 .,,-I
~
12
~ 15
i'--~ -'
~ - Gpe ['., l'
.............
~ 10 I-:;. Nf
l/
'"
/
10
o
10
_G pe
•• Nf..l
20 40 60 100
- 200
,..../ ["--.
400 600
t'-
1000
~
2000
"''Ii.
"
-5
5
2-466
2N3283 thru 2N3286 (Continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES Vdc
(IC = 100 fJAdc, VBE = 0) 2N3283, 2N3284 25 30 -
2N3285, 2N3286 20 25 -
Collector Cutoff Current ICBO fJAdc
(VCB = 10 Vdc, IE = 0) - 2.0 10
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 10 Vdc) 2N3283, 2N3284
2N3285, 2N3286
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 100 MHz) 250 400 800
Noise Figure NF dB
(IC = 3.0 mAdc, VCE = 10 Vdc, f = 200 MHz)
2N3283 - 4.0 5.0
2N3284 - 5.0 6.0
2N3286 - 5.0 -
FUNCTIONAL TESTS
• Cob is measured in a guarded circuit such that the can capacitance is not included.
,. AGe is obtained by increasing IC' The circuit remains adjusted for VCE = 10 Vdc and IC = 3.0 mAdc operation.
2-467
2N3283 thru 2N3286 (Continued)
FIGURE 1 - 200 MHz POWER GAIN AND NOISE FIGURE TEST CIRCUIT
SHielD
I
I
I
I
CN
l·1 OUT
SOil
Rl
SOllr;
RI
IN
':" 470
NonS:
l·1 'I. inch inside diameter, If> inch length, 4 turns #20 solid copper wire,
center tapped.
T·I \4 inch inside diameter, close wound, 3 turns #26 solid copper wire. 1:'1
ratio bi·liller wound.
• Hi8h Quality piston type capacitor.
Distance Irom emitter contact 01 transistor to ,round sid. 01 bypass capaci.
tor should be kept minimum I, -Vee
8KII
.001"F~
10011
l, - 4 TURNS OF # 22 NYKLAD WIRE SPACED FOR 257 MC. COIL FORM 7/32" CENTER POWER
RFC - 24 TURNS # 30 NYKLAD WIRE CLOSE WOUfjD DETECTOR
ALL CAPACITORS ARE CERAMIC TYPE
2-468
2N3287 thru 2N3290 (SILICON)
MAXIMUM RATINGS
RL =500
ll,6 turns of #16 tinned wire; %" 10; Air wound; winding length 3,4"; T1,3 turns primary and secondary Bifilar wound (close wound) on '14"
Vccfeeds tap 4% turns from collector end; output tap 3'12 turns ceramic form (cambian type) with brass slug. #22 enameled wire.
from collector end.
PI,General Radio 874 G6 Pad (6dB)
P2,Generai Radio 874 G6 Pad (6dB)
2-469
2N3287 thru 2N3290 (Continued)
--
Collector Cutoff ICBO VCB = 15 Vdc All Types - .010 /.IAdc
Current VCB = 15 Vdc, TA = 150 0 C 2N3287, 2N3288 - 3.0
DC Forward Current hFE VCE = 10 Vdc, IC = 2 mAde -
Transfer Ratio 2N3287, 2N3288 15 '- 100
Collector-Emitter
2N3289, 2N3290 10 - 150
VCE (sat) IC = 5 mAdc, IB = 0.5 mAdc Vdc
Saturation Voltage 2N3 287, 2N3288
2N3289, 2N3290
-- -
-
0.3
0.4
Base- Emitter VBE (sat) IC = 5 mAdc, IB = 0.5 mAdc Vdc
Saturation Voltage 2N3287, 2N3288 - - 0.9
2N3 288, 2N3290 - - 1.0
AC Current Gain
hfe VCE = 10 Vdc, IC = 2 mAdc, f = 1 kHz
2N3287, 2N3288 15 - 150
-
2N3289, 2N3290 10 - 200
Output Capacitance Cob VCB = IOVdc,IE =O,f = 0.1 MHz(Note 1) pF
2N3287 - 0.9 1.1
Collector-Base
2N3288 thru 2N3290 - 1.2 1.5
rb'C c VCB = 10 Vdc, IC = 2 mAde, f = 31.8 MHz ps
Time Constant 2N3287, 2N3288 3.0 8.0 15
2N3289, 2N3290 3.0 8.0 20
Current Gain - iT VCE = 10 Vdc, IC = 2 mAdc MHz
Bandwidth Product 2N3287, 2N3288 350 600 1200
2N3289, 2N3290 300 500 1200
Maximum Frequency
of Oscillation
f max VCE = 10 Vdc, IC = 2 mAdc - 2000 - MHz
NEUTRALIZED POWER GAIN POWER GAIN AND NOISE FIGURE versus COLLECTOR CURRENT
AND NOISE FIGURE versus FREQUENCY
50 Vet - 10 Vde, Ie - 2 mAde 20
~z:
40
....
, r-....
16
!'
!!! !
30 NF 12~ z:
~ G. ~
~
.
'"
~ 20 "- !X" v· '"<5
z:
..-z :r
""~
d d
10 f-- .
/' r-....
r--'
o
10 20 40 60 100 200
F.REQUENCY (, MHz\.
400 600 1000
" 2000
0
4000
Ie, COLLECTOR CURRENT (mAl
2-470
2N3291 thru 2N3294 (SILICON)
CASE 20
(TO-72)
MAXIMUM RATINGS
NEUTRALIZED POWER GAIN POWER GAIN AND NOISE FIGURE versus COLLECTOR CURRENT
AND NOISE FIGURE versus FREQUENCY
50 Vco- 10 Vde, Ie - 2 mAde 20
40
... 16 iii 20
~ 3
~
II!
!'"
!z 16
.... II. ~
NF 12
ii
l!l
"- ')< ,,-
12
z '"
0
8 ..: 0~
z ... .....
.",,' .J
.......
10
~.- --- 4
4
o
10 20 40 60 100
flIEQUENCY
200
(MHz)
400 600 1000
" 2000
0
4000
2-471
2N3291 thru 2N3294 (Continued)
DC Forward Current
Transfer Ratio
hFE VCE = 10 Vdc, Ie = 2 mAde 10 - - -
AC Current Gain hte VCE = 10 Vdc, Ie = 2 mAdc, 10 - 200 -
f = 1 kHz
Output Capacitance Cob VCB = 10 Vdc, IE = 0,
f = 100 kHz , Note 1
- 1.0 2.0 pF
Maximum Frequency
of Oscillation
fmax VCE = 10 Vdc, Ie = 2mA - 2000 - MHz
2N3291
Power Gain Ge 16 20 24 dB
VCE = 10 Vdc, Ie = 2 mAdc,
Noise Figure NF f = 200 MHz - 6.0 8.0 dB
f = 200 MHz
2N3292
Power Gain Ge 18 20 24 dB
VCE = 10 Vdc, IC = 2 mAdc
Noise Figure NF f = 200 MHz - 7.0 9.0 dB
2N3293
Power Output Pout
VEE =-11 Vdc, f = 257 MHz
2.0 - - mW
2N3294
Power Gain Ge 14 - - dB
VCE = 10 Vdc, Ie = 2 mAdc
Noise figure NF f = 200 MHz - 7.0 - dB
Note 1. COb is measured in guarded circuit such that the can capacitance is not included.
Note 2. AGe is obtained by increasing Ie.' The circuit remains adjusted for VC'E = 10 Vdc,
Ie = 2 mAdc operation.
2-472
2N3295 (SILICON)
CASE 31
(TO-S)
MAXIMUM RATINGS·
2-473
2N3295 (Continued)
IC = 10mAdc,
DC Current Gain hFE VCE = 10Vdc 20 -- 60 --
IC = 150mAdc,
VCE = 10Vdc 111 20
_. -- --
Collector-Emitter VCE(sat) IC = 150mAdc, Vdc
Saturation Voltage IB = 15mAdc -- -- 0.5
Collector-Emitter Open
V ' I I Ic = 100mA, IB = 0
CEO(sus) 20 -- -- Volts
Base Sustain Voltage
Power Gain Ge
P
ou
t =O. 3 Watts
PEP
14 17 -- dB
Intermodulatlon
Distortion Ratio
1m
(0.15 W rms)
f = 30MHzYCE = 15. OVdc
30 32 -- dB
Efficiency 1/
IC(max) =40mA 25 30 -- %
I1J Pulse Test: Pulse Width = 100 liS, Duty Cycle = 2 %
Note 1. PEP. Peak Envelope Power
2-474
2N3295 (Continued)
~
~
200 \.
~ "I\. Te - 25°C
15
~
;;
0.04 ""-
\.\. \.
'\.
DC ~ \\ \
"
.!J
100
..... I--- VeE - 15 Vdc
.....
0.02
I. DISTORTr <-3, dB I \ :\r\
I'.... ....... 0.01
10 20 30 40 50 60 10 20 40 60 80 100 200 400
Ve" COLLECTOR· EMIITER VOLTAGE (VOlTSI I. FREQUENCY MHz)
MAXIMUM POWER OUTPUT FOR GIVEN 1m DISTORTION LEVEL POWER OUTPUT versus OPTIMUM BIAS
0.5 0.5
i"""-o ........
/
r-.... ....... Ve.-15Vdcl
/
~ 0.4 ~ 0.4 r--
1-30 MHz.
~ r-.... ~
MINIMUM 1m DISTORTION
Te - 25°C /
~ ~ I--
~
" /
0.3
\ ~ 0.3
/
i 1\ i
J 0.2 r-- _Ve.-15Vdc
i J 0.2 /
II~ 30 HZ
/
/
0.1 0.1
25 30 35 40 3.0 3.2 3.4 3.6 3.8 4.0
I., INTERMODULATION DISTORTION (,dB BELOW SIGNAU lelo"I' OPTIMUM NO - SIGNAL COLLECTOR CURRENT (mAl
~
~
/'
....... -- ,
30 i ~
~ 5
§
0.3
/
;,. ~
~
,/
30 ~
i3
~
I I
co
15 0.2 ~ 20 0.2 ./ 20
~ A""-
~ .....
i I ./
J 0.1 10 ~ 0.1
/ p... MINIMUM I. DISTORTION
ICE ; 115 VdC _ 10
"
V / 1
o V o oV o
o 10 o 0.05 0.1 0.15 0.2 0.25
p., POWER INPUT (mW - PEP) P,. ' POWER INPUT ImW - PEP)
2-475
2N3296 (SILICON)
(10-102)
Collector connected to case;
stud isolated from case
2-476
2N3296 (Continued)
ELECTRICAL CHARACTERISTICS
Collector-Emitter Current
VCE ; 60Vdc, VBE ; 0 -- -- 100
ICES /lAdc
VCE ; 50Vdc, VBE ; 0, TC; +175°C -- -- 500
2-477
2N3296 (Continued)
~ I I IIII
-~~
~
1200
~
1000
\ ~
2.0
Ve.=3~VcIc ~~
~
1"\4\:\~
%
~ \ ~
1M DISTORTION < - 3D dB .~~
a 800 0.5 .S PULSE WIDTH ~
1.0
~ ~
" 40 50 60 7D
Veo . COLLECTOR· EMITTER VOLTAGE IVOLTS!
80 90
D.1
10 2D 40 60 80 100
,. FREQUENCYf MHz I
200
MAXIMUM POWER OUTPUT FOR GIVEN 1m DISTORTION LEVEL POWER OUTPUT versus OPTIMUM BIAS
~
,1=30~H~b-
,1= 30~HZ
f-- I--OPTIMUM BIAS
""' " VeE = 30 Vdc
f\.
\
1\
\ , I\Va = 30VcIc
MINIMUM 1m DISTORTION
Te=25'C- I--
20 25 30 35 40 45 2 10 12 14
Im.INTERMODULATION DISTORTION IdB BELOW SIGNAU lei",')' OPTIMUM NO - SIGNAL COllECTOR CURRENT ImAdel
~ I
40
V.... ~.1l5V1
40
....... /
~
1/ "",- ry 30
! k-
./ -+-- _. - 1--1--- 30
., ~
e; ~
~
-- -- - -
I/; ~,
1,1l5Vl). 11\ ~
-
2D 20
j P",130Vl ) P,.. 13OVl 1,..-
.: "
I. ... 1--
)
V .... .... "I P",1l5V1
I
1D
)
V
...... .... P... 1l5Vl~
10
o
~ .... I o o
It........ o
o 20 40 60 80 100 o 12 16 20
PI,. POWER INPUT ImW - PEPI PI,. POWER INPUT ImW - PEPl
2-478
2N 3297(SILICON)
CASE 1
(TO·3)
Collector connected to case
MAXIMUM RATINGS.
• The maximum ratlnp u given for de conditions can be exceeded on a pulae baala. See electrical characterlstica
2-479
2N3297 (Continued)
Collector-Emitter
Current ICES
VCE = 60Vdc, VBE = 0 -- -- 0.5
mAdc
VCE = 50Vdc, VBE = 0, TC = +175°C -- -- 1.0
Collector-Cutoff
Current
I CBO VCB = 50Vdc, IE = 0 -- -- 1.0 /lAdc
2-480
2N3297 (Continued)
';
!
~
2.0
1\
~
t;;
"'%
~
t
~
'%
~ 1\ 1\
1.5
\ OC Tc - 25°C §
1,\ ffi 1\1\ ~
"~ 1.0 I\. ~
~
i'. I\.
" r-,.\'%
,(I -::;
.9 J "?
,:
~
" '"
~-
'........
0.5 i'l ~ ~
r-... ~ VCE~30V
1m OISTORlON <. j dB <Q.-
I ' r- t--- 1'--
10 20 30 40 50 60 70 80 10 20 30 40 60 80 100 200 300
VCE. COllECTOR· EMITTER VOLTAGE IVOlTS} f. FREQUENCY I MHz)
MAXIMUM POWER OUTPUT fOR GIVEN 1m DISTORTION LEVEL POWER OUTPUT versus OPTIMUM BIAS
30 30
~
f=30MHz
25 "- 25 MIN 1m DISTORTION- t--
~ II op~;a~ :~Sz} ~
\\ Tc~WC
........ \
~
i
t;;
20
VeE =
"- I"-
30 Vdc
~
t;;
20
_1 VeE -
.1
30 Vdc
15
~
15
"\ § \
~
j
10
- r- J"'..." VeE = 15 Vdc ,,\
i
~
10
~
1 VeE -15Vdc V
V
........ r- ~
o
20 25 30 35 40 45 10 15 20 25 30 35 40 45
1m. INTERMODULAllON DISTORTION I dB BELOW SIGNAl} Iclo,'I. OPTIMUM NO - SIGNAL COllECTOR CURRENT ImMel
~ I I
,/ ',,130Vl
/
/' -P",130Vl
. ~
,
..
g . ...- i-""-- ~u
40 40
~
20 20
~ "1/
J J
V
MINIMUM 1m DISTORTION §
i
t;;
L
... ....-
~
§
I 15
II
30
§ 15
,130Vl.2'
....-1: .. V
30
ffi
~
J
10
I
1/,
V,
;
~
P",(15V1
20 I
"
ffi
~
J
10
-"r<: ,Cl5V1
If" V
/P",130YI
"
, 20 I"
10
/ V ~-" Pool Cl5V1
10
f. ./ " 1
'I' ~
o
o 1.0 2.0 3.0 3.5
0
"""'
0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18
o
P'" POWER INPUT (WATTS· PEPI P,•• POWER INPUT IWATTS· PEP)
2-481
2N3298 (SILICON)
~
R'
16K
RFC SOU
BOLOMETER
15 pF
-12V o-----e----..JV'..,.,..---.. . .
20U
2-482
2N3298 (Continued)
Power Output P
out
f= 80 MHz
60 - 100 mW
VCC=12 Vdc
Efficiency 1/ lC(max) = 20 rnA 25 40 - %
/
Vet: = 5V
'<
<>
"
<>
~ 300
/ or
<>
;
I fA = 25°C '\
"
1.0
I
•.. / "I
z
;c
'"i
200
I
,/
V 100
o.• o
-15 -51) -25 0 +25 +50 +15 +100 +125+150+175 o 10 20 30 40 50
T.l. AMBIENT TEMPERATURE «Ie)
Ie. COLLECTOR CURRENT (mAde)
2-483
2N3299 thru 2N3302 (SILICON)
CASE 22
(TO-IS)
CASE 31
(TO-S) 2N3301
2N3302
2N3299
2N3300
Collector connected to case
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 30 Vdc
(Applicable 0 to 10 mAdc)
Collector-Base Voltage VCB 60 Vdc
2N3299 2N3301
2N3300 2N3302
Total Device Dissipation @TA = 25° C PD 0.8 0.36 Watt
Derate above 25°C 4~56 2.06 mW/oC
Total Device Dissipation @T C = 25° C PD 3.0 1.8 Watts
Derate above 25°C 17.2 10.3 mW/oC
r- r-
+:n
""1
= 25Vdc
--j 300ns
Vee
IO I-'S
-15 Vdc Vee = 25 Vdc
o.:r---L 80
....- - 0 OUTPUT TO
500
80
OSCILLOSCOPE OUTPUT TO
500 500 OSCILLOSCOPE
Zi• .,100 kD
t,:;; 1.0 ns Zi. '" 100kD
t, :s; 1.0 ns
50
2-484
2N3299 thru 2N3302 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = O. 1 mAde, VCE =10 Vde) 2N3299, 2N3301 20 -
2N3300, 2N3302 35 -
(IC = 1. 0 mAde, VCE = 10 Vde) 2N3299, 2N3301 25 -
2N3300, 2N3302 50 -
(IC = 10 mAde, VCE = 10 Vde) 111 2N3299, 2N3301 35 -
2N3300, 2N3302 75 -
(IC = 150 mAde, VCE = 1. 0 Vde) III 2N3299 , 2N3301 20 -
2N3300, 2N3302 50 -
(IC = 150 mAde, VCE = 10 Vde)' 111 2N3299, 2N3301 40 120
2N3300, 2N3302 100 300
(IC = 500 mAde, VCE = 10 Vde) 111 2N3299, 2N3301 20 -
2N3300, 2N3302 50 -
Collector-Emitter Saturation Voltage Vde
VCE(sat)
(IC = 150 mAde, Ia = 15 mAde) - 0.22
(IC = 300 mAde, IB = 30 mAde) - 0.45
(IC = 500 mAde, IB = 50 mAde) - 0.6
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 50 mAde, VCE = 10 Vde, f = 100 MHz) 250 -
Output Capacitance Cob pF
(V CB = 10 Vde, IE = 0, f = 140 kHz) - 8. a
111 Pulse Test: Pulse Width ~ 300 !.Ls; Duty Cycle ~ 2%.
2-485
2N3303 (SILICON)
CASE 94
Collector connected to case
MAXIMUM RATINGS
2-486
2N3303 (continued)
Input Capacitance C ib pF
(VBE = 0.5 Vde, IC = 0, f = 140 kHz) - 25
FIGURE 1 - TURN·ON AND TURN·OFF TIME TEST CIRCUIT FIGURE 2 - STORAGE TIME TEST CIRCUIT
VII Vee Vee Vee
-4.0V +12V +16V +5.ov
::rL
r
1.0,.F 4711 PU~SE WIDTH> 100 ns 4711
_01:LI
PUlSE SOURCE
t,.=t,~l.Ons PUlSE SOURCE
~.~ lOll t,~ 1.0ns
PRf<IOOkHz ~. ~ 500
.,.. PRf < 100kHz
Ie:::::: lOOmA, 111:::::: -lIZ::::: lOOmA
2-487
2N3304 (SILICON)
CASE 22
(TO·18)
MAXIMUM RATINGS
2-488
2N3304 (continued)
ON CHARACTERISTICS
DC Curren. Gain CII bn
(Ie • I mAde, VCE • 0.5 Vde) 15
(Ie • 10 mAde, VCE • 0.3 Vde, TA • • 55OC) 12
(Ie = 10 mAde, VeE'" 0.3 Vdc) 30 120
(lc • 50 mAde, VCE • 1.0 Vde) 20
Collector-Emitter Saturation Voltage VCE{...) Vde
(Ie • I mAde, 18 • 0.1 mAde) 0.15
(.Ie '" 10 mAde. IS"" 1 mAde. T A'" + 1250(:) 0.23
(Ie '" 10 mAde, IS '" 1 mAde) 0.18
(Ie = 50 mAde, IS '" 5 mAde) 0.5
FIGURE I - TUIII·OI & TURN.fIFF TIME TtST CIRCUIT FIGURE 2 - CIIAlI8E·STOtIA8E TIME TEST r.!RCUIT
V... -lOY Vco=-3V
V•• =-6V
5kll
Vee =-1.5V
13111l
51111l
..."( 1
V,. = 5.0V
Pulse Width > lOOns
~.~5O!l
~.~<1.0ns
5kll TO SAMPLING SCOPE
IiI ~ lookQ
tr < I.Ons
d:l-ro.
Pulse Width > lOOns
1.. =5O!l
~"'l.Ons
511l
IW
TO SAMPLING SCOPE
111~loolcQ
~<1.0ns
2-489
2N3307 (SILICON)
2N3308
MAXIMUM RATINGS
Value
Rating Symbol Unit
2N3307 2N3308
Collector-Base Voltage VCB 40 30 Vdc
Collector-Emitter Voltage VCES 40 30 Vdc
-
Ve,=-10 Vde - - TUNEDATle"'-2mAdeONlY.
t =200 MHz - - TUNED AT EACH TEST CURRENT.
I I
- "'.-,,,
5 I--
VcE =-15Vdc-
~
r-r-
0/ Vc ,= -5 Vdc
3
5 "
Nf
f..L
I" ~> ~ 1--- ......
-
0
"~. "
5 RG =50 ohms
.......
-5
o -2 -4 6 -8 -10 -12 -14 -16 -18
0- 20
o
20 30 50 70 100 200 300 500
Ie, COllECTOR CURRENT ImAdel t, fREQUENCY IMHz)
2-490
2N3307, 2N3308 (Continued)
Maximum Frequency
of Oscillation
I
max VCE = 10 Vde, IC = 2 mAde Both Types - 2000 - MHz
• Cob is measured in guarded circuit such that the can capacitance is not included.
•• AGC is obtained by lDcreasing Ie. The circuit remains adjusted for VCE = ... 10 Vdc, Ie = -2 mAde operation.
SMALL SIGNAL CURRENT GAIN versus FREQUENCY MAXIMUM AVAILAlLE GAIN VlrsuS FREQUENCY
50
Veo - -10 Vile Ve. =-10 Vdc
25
~ 40
iii:
~ ~
.........
t"t-- i ~ I:::::=::::
~ 30
~~. 2mAdc
! ~ ~2i
f--hI. _l!..
""-."l
~,
i. 20
MAG=~
41. I..
)~--~=::
y;.
1c~-5mAdc
~ ~ 10
5
'-
o
20 30 50 70 100 200
"'"300
............. f-
500
o
20 30 50 70 100 200 300 500
t: FREQUENCY (MHz) f. FREQUENCY (MHz)
2-491
2N3311 thru 2N3316 (GERMANIUM)
CASE 5
(TO·36)
MAXIMUM RATINGS
2-492
2N3311 thru 2N3316 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(I C = 500 mAdc, VCB = 2. 0 Vdc) 2N3311 thru 2N3313 - 150
2N3314 thru 2N3316 - 250
(IC = 3.0 Adc, VCB = 2.0 Vdc) 2N3311 thru 2N3313 60 120
2N3314 thru 2N3316 100 200
Collector-Emitter Saturation Voltage Vdc
VCE(sat)
(IC = 3.0 Adc, IB = 300 mAdc) - 0.1
DYNAMIC CHARACTERISTICS
Common Emitter Cutoff Frequency f(lie kHz
(IC = 3.0 Adc, VCE = 2.0 Vdc) 1.0 -
Small Signal Current Gain hfe -
(IC = 3.0 Adc, VCE = 2.0 Vdc, f = O. 5 kHz) 2N3311 thru 2N3313 30 90
2N3314 thru 2N3316 40 120
*To avoid excessive heating of the collector junction, perform these tests with an oscilloscope.
2-493
2N3311 thru 2N3316 (continued)
2N3311,2N3314 m "sec to 5 msee pulse)
10
~
~~
Ie PEAK j lms 25·50 ~s
5 m, 2501"
500 ~, SAFE OPERATING AREA
- lCI"'Ax] CONT.
./ ~\
)<. \\\\ \
Q.
~
/ \~\\ The Safe Operating Area Curves indicate the Ic-V CE limits
/1
~ l70·WATT AVERAGE ...../
below which the devices will not go into secondary break-
~
POWER OISSIPATION AT
25"C CASE TEMPERATURE down, As the safe operating are~s shown are independent of
a temperature and duty cycle. these curves can be used as long
'" ~C...! ~
~
as the average power derating curve is also taken into con-
sideration to insure operation below the maximum junction
o 0.5
u temperature.
.§ 0.4
0.3
0.2
o. 1
10 20 30 40
Ve<. COllECTOR·EM ITTER VOLT AGE (VOL TSI
2N3312. 2N3315 (25 f,LS to 5 ms pulse) 2N3313. 2N3316 (25 f,LS to 5 ms pulse)
10
10 r--le-p'TEA-K-"'J"~--I-m-Sr,-.:-
~~'T'~n'i:=-Tt---25-'5"lOr~-S---'
Ie PEAK
5m, ~I\~ t-- 250 "'
1
~\: -- 500",
Q.
"::!. ! 21--~~--r-~~~rr~~+-~
~
z
w
a'"'"
!
'"
/ -V "'\ DC
1 1---+--I---I---1----t---+---'<a-t---I
'" ~ l70·WATT AVERAGE ,
~8 0.5 I----t----t---+---~l--+_--__i
~
8 0.5
2~~~~~~Ni~~~I~ANT~~E
I---+--+----!r----t---+---t---I
~ 0.4 1---+---+---+---+"'-+---1 ~ 0.4 I---+--+---tf---+--+----t---I
0.3 1---1----1---+---+--'1--+---1 0.3 1--+--1--+--1--+--1---1
0.2 I---+---+---+---+_-t---j---__i 0,2 I---+--+-----jr----t---+----t---I
0.1 L -_ _L-_--'_ _--l._ _--J.._L--.L.._ _..j 0.1 '--_-.L.._ _'--_-.L.._ _'--_-.L.._ _L-_-'
o 10 20 30 40 50 60 o 10 20 30 40 50 60 70
Ve" COLLECTOR·EMITTER VOLTAGE (VOLTSI Veo. COLLECTOR·EMITTERVOLTAGE (VOLTSI
TEMPERATURE CHARACTERISTICS
leBO versus TEMPERATURE 130
100 G
~ 120
%
/1
- --
@ 110
/' Ie = -3 A
.J 100
Vo< - -2 V
/
~ 90
10
80
~ I
l-
I
~
70
.Q.
:;
OJ LO
/
-60 -40 ·-20 20
Te. CASE TEMPERATURE ( DC)
40 60 80
~
DC TRANSCONDUCTANCE versus CASE TEMPERATURE
J _ 130
I V
u
~ 120
V
--
0.1
@ 110
/1
./' Ie = -3 A
~ 100 VeE - -2 V
,01
o
.L
20 40 60
Te. CASE TEMPERATURE (DC)
80 100
~
o'i;
90
80
70
-60
f,---
-40
- -~
~
0 ~ ~
I
I
60 80
Te. CASE TEMPERATURE (DC)
2-494
2N3323 (GERMANIUM)
2N3324
2N3325
PNP germanium epitaxial transistors for FM RF,
CASE 22
IF, mixer and oscillator and AM RF, IF and converter
(TO-18) applications.
Collector connected·to cese
MAXIMUM RATINGS
35 70
30
1\
'\.
II"""
, ,""" 60
25 "''''''
G,INEUTRALIZ£D)
so i
h,.
I 20 40 ;
POWER GAIN AND AC CURRENT GAIN versus FREIlUENCY 15
~ 15 30
~~
.......
10
'\. 20 .i
~
f-- I-~CE - 10 Ydc
Ic~ 3mAdc
'\. 10
.......
1.0 2.0
, ,""""""
4:0 6.0 10 20
.....
4D 60 100 200 400 600 1000
t, FREQUENCY I MHz)
2-495
2N3323 thru 2N3325 (Continued)
Collector-Emitter
Current
ICES VCE = 35 Vdc, VBE = 0 -- -- 100 /JAdc
Collector Cutoff
Current
ICBO VCB = 10 Vdc, IE = 0 -- 0:5 10 /JAdc
Emitter Cutoff
Current lEBO \T EB = 2 Vdc, IC = 0 -- -- 100 /JAdc
DC Current Gain
hFE VCE = 10 Vdc, IC = 3 mAdc 30 -- 200 --
VCE = 10 Vdc, IC - 3 mAdc
AC Current Gain hfe
f = 1 kHz
30 -- 225 --
Current-Gain - VCE = 10 Vdc, IC = 3 mAdc
Bandwidth Product
fT
f = 100 MHz
200 -- 600 MHz
Maximum Frequency
of Oscillation
f
max
VCE = 10 Vdc, IC = 3mAdc -- 500 -- MHz
Input Resistance,
Parallel Equivalent
R.
Ie VCE = 10 Vdc, IC = 3 mAdc
-- 1200 -- ohms
Input Resistance,
Parallel Equivalent
R.
Ie -- 100 -- ohms
VCE = 10 Vdc, Ic = 3 mAdc
Output Resistance,
Parallel Equivalent
R
oe
f = 100 MHz
-- 1.0 -- kohms
2M3323
2-496
2N3323 thru 2N3325 (Continued)
~-lITU_#2IAWIS 3/16'"',D.
stJPPI.V TAP 7 TURf\lS FROM
COU£CTOR END.
NEUTllALIZATION-4TIIRNS.
3.12 pF
,,=500 7..., pF
. "' ....
r' r·
15-30 pF
2"·pF
"'0 3.g"M
.",.H
':"
'0
1· 1 1'F
"
51 pF
"=!iOO Io3S pF
1,.11
J
9-35 pF
1.,_24TUllftSOf#28AWGWIIE.
v,
lCMD T'I - 5 TUMS" COllECTOIlND
StI'I'lY TAP -15 TUINS FROM COllECTOR END
JlMJM.tZATION - , llMtIS
2-497
2N3330 (SILICON)
~:;~: r-
OIA I
~o
MAXIMUM RATINGS
Rating Symbol Value Unit
1_1'
Drain-Gate Voltage VDG 20 Vdc
0.500
Reverse Gate-Source Voltage 20 Vde MIN
VGSR
~~~: OIA
"'Gate Current
*Total Device Dissipation@TA = 25°C
IG
PD
10
300
2.0
mAde
mW
mW/oC
~
Derate above 2SoC
·Storage Temperature Range Tstg -65 to +200 °c
-Indicates JEDEC Registered Data. 0.100
Pin 1. Source
2. Gate
3. Drain
4. Case
0.028
0.048
TO-72
CASE 20 (51
2-498
2N3330 (continued)
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage VIBRIGSS 20 - Vde
IIC = 10 /lAde, VDS = 01
Gate Reverse Current IGSS nAde
IVGS= 10Vde, VDS=OI - 10
IVGS = 10 Vde, VDS = 0, TA = 1500 CI - 10 /lAde
Zero-Gate Voltage Drain Current INote 1) IDSS 2.0 6.0 mAde
IVDS = -10 Vde, VGS = 0)
ON CHARACTERISTICS
Gate-Source Voltage VGS - 6.0 Vde
IVDG = -15 Vde, ID = 10/lAde)
Drain-Source Resistance rDS - 800 Ohms
liD = 100 /lAde, VGS = 0)
SMALL-SIGNAL CHARACTERISTICS
Forward Transadmittanee INote 1) IVfsl JJmhos
IVDS = -10 Vde, ID = 2.0 mAde, f = 1.0 kHz) 1500 3000
IVDS = -10 Vde, ID = 2.0 mAde, f = 10 MHz) 1350 -
2-499
2N3375(SILlCON)\
2N3553
2N3632 * Collector Connected
to Case
2N 3961 • CASE 79 ·'·CASE 24 "·CASE 36 .. Collector electrically connected
(10·39) (10·102) (10·60) to case; stud electrically
2N3375 isolated from case
2N3553 2N3961 2N3632 * •• Stud electrically
Isolated from case
MAXIMUM RATINGS
2-500
2N3375, 2N3553, 2N3632, 2N3961 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(IC = 250 mAde, VCE = 5.0 Vde) 2N3375, 2N3553, 2N3632 10 - -
(IC = 1.0Ade, VCE = 5.0 Vdc) 2N3632 5.0 - -
Collector-Emitter Saturation Voltage VCE(sat) Vde
(Ie= 250 mAde, IB = 50 mAde) 2N3553 - - 1.0
- - 1.0
(IC = 500 mAde, IB = 100 mAde)
VBE(sat)
--
Vde
(IC = 1. 0 Ade, IB = 5.0 Ade) 2N3632 - - 1.5
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 100 mAde, VCE = 28 Vde, f = 100 MHz) 2N3553 - 500 -
(IC = 125'mAde, VCE = 28 Vdc. f = 100 MHz) 2N3961 350 -
(IC = 150 mAde, VCE = 28 Vdc, f = 100 MHz) 2N3375 - 500 -
2N3632 - 400 -
Output Capacitance Cob pF
(VCB = 28 Vdc, IE = 0, f = 100 kHz) 2N3961 - 8.0 10
(VCB = 30 Vdc, IE = 0, f = 100 kHz) 2N3375, 2N3553 - 8.0 10
2N3632 - 16 20
FUNCTIONAL TESTS
2N3375
Common-Emitter Amplifier
(VCE = 28 Vdc, Pout = 3.0 Watts,
Gpe 4.77 - - dB
Power Gatn f = 400 MHz)
Collector Efficiency ~ 40 - - %
2N3553
Common-Emitter Amplifier
(VCE = 28 Vdc, Pout = 2. 5 Watts,
Gpe 10 - - dB
Power Gain f = 175 MHz)
Collector Efficiency ~ 50 - - %
2N3632
Common-Emitter Amplifier
Power Gain
(VCE = 28 Vdc, Pout = 13.5 Watts,"
Gpe 5.86 - - dB
f = 175 MHz)
Collector Efficiency ~ 70 - - %
2N3961
Common-Emitter Amplifier
Power Gain
(VCE = 12.5 Vdc, Pout =2.0Watts,
Gpe 6.0 - - dB
RS = 50 ohms, RL = 50 ohms,
Collector Efficiency
f = 135 MHz)
~ 60 - - %
2-501
2N3375, 2N3553, 2N3632, 2N3961 (continued)
8.0
--
::---....
-......
I--
r-...
r---.... r--
- ....r-.. p,~~2hw
-r--- ..I.
"l" ':>c
I.SW-
i-"'"
Iiw
10
8.0
l"-.
~"
P" 1o.sw
OI375l
.............
I>-.
r--...
/" r-
.I
-- -
? ....... r--.. ..... ~
r- r--.
"-" .". .........
r-....."'" ~
/
/
VO.2S0W
-o.S~
o.ifw
/
............
r-
- ....... t-
....... i'-
..... r--.
0
~
.............
~o.osow
~
..........
r--.....
0
"
').....
~
O.1/ow
~/
~
."')< ......... ,
" ....... ........ r---" , .....
", .......
........
r-...: ~ .....
..... ::::::
1.0 o
100 ISO 200 2S0 300 400 SO 75 100 150 200 300 400
f. FREQUENCY (MHz) f. FREQUENCY (MHz)
E
~ 10 h:-I-- ---- :---::=:::: ~ :::::::::-...
~
5
- ---
~ 4.01------"""""""':t----"""""-::---f:.......;;:::-''=l
~ 8.0
5
co
a..~
6.0 r--- o.sw
4.0
- 1.0(
_/
./
./
. / r--... :--...
I 3.01------::....."i""''------==:.......;;:I----;;;-..e::...,''''''''':--I
co
~
l.SW ............ ~
.: 2.01------+-----+-----+-~
2.0
~
1.0L...._ _ _ _ _..I.-_ _ _....l-_ _--I._---..l
1.0
50 60 80 100 ISO 200 300 100 150 200 300
f. FREQUENCY (MHz) f. FREQUENCY(MHz)
UNIT
UNDER r-
TEST I
I
5.0 TO SCOPE HORIZ.
TO SCOPE
RElAY .... HORIZONTAL
SENSING
2-502
2N3375, 2N3553, 2N3632, 2N3961 (continued)
TEST CIRCUITS
2N3375
FIGURE 7 - 100 MHz FIGURE 8 - 400 MHz
4.0-40 pF
2·
STUB
TUNER
RS = 50n
3·
STUB 2N3375
TUNER
+2SV
500 pF
Ll: 3 turns No. 16 AWG wire 14"1.0 .• 5/16" long
L2: 5 turns No. 16 AWG wire 5/16"1.0 .• 7116" long
2N3553 2N3632
FIGURE 9 - 175 MHz FIGURE 10 -175 MHz
3.0-35 pF 3.0-35 pF RL = son
L1: 2 turns No. 16 AWG wire 3116" 1.0 .• 14"long Ll. L3: 4 tums No. IS AWG wire 14" 1.0. 3/16" long
L2: 2 turns No. 16 AWG wire 3116"1.0 .• 14"long L2: 1turn No. 16 AWG wire 14"1.0 .• 3/16" long
L3: 3 turns No. 16 AWG wire 3/S" 1.0 .• 3/S"long 4: 2% turns No. 16 AWG wire 14"1.0 .• 14"long
2N3961
FIGURE 11 -135 MHz FIGURE 12 -175 MHz
2-503
2N3425 (SILICON)
One Both.
Side Sides
Total Device Dissipation @ TA = 25° C PD 0.3 0.4 Watt
5.0 k
..)
270
v...
t,.,
v.= -4.0Vdc
V;, = +21 V•.•
WAVEFORMS
V.. = +17Vdc
Vln = -20 Vp•p
°i~1 0.01
I' ToOSCILLOSCOPE
10%
" "
50
t'Jv~:n 20Vdc
., "~) +
V V;, rise time < 5.0 ns
i
Vi Vcc=3.0Vdc
1-
Capacitor values in ~F
Resistor values in ohms
2-504
2N3425 (continued)
ELECTRICAL CHARACTERISTICS (each side) (T, = 25'C unless oth.""se noted)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage (U BV CEO(sus) Vde
(lC = 10 mAde, IB = 0) 15 -
Collector-Emitter Sustaining Voltage" (1) Vde
BV CER(sus)
(IC = 30 mAde, RBE ~ 10 ohms) 20 -
Collector-Base Breakdown Voltage BV CBO Vde
(lC = 10 !lAde, IE = 0) 40 -
Emitter-Base Breakdown Voltage BVEBO Vde
(IE = 10 !lAde, IC = 0) 5.0 -
·Collector Cutoff Current ICEX !lAde
(V CE = 20 Vde, VEB(oll) = 0.25 Vde, T A = 125' C) - 15
(V CB = 20 Vde, IE = 0, T A = 150'C) - 15
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product IT MHz
(IC = 20 mAde, VCE = 10 Vde, I = 100 MHz) 300 -
Output Capacitance pF
Cob
(V CB = 10 Vde, IE = 0, I = 140 kHz) - 6.0
O~
.,0.0025 0.002\
,
-4.0Vdc ----f---'.....- - -
.I TO OSCILLOSCOPE
.'-
~~
z.= 50 n Z'"~ lookn
68 t ,;,; 5.0 ns
1~ ~~
+ ,\. +
" Voo rise time < 5.0 ns
-:t T- Capacitor values in /IF
Resistor values in ohms
V" ~
11 Vdc 7 Vee = 10 Vdc
2-505
2N3427, 2N3428 (GERMANIUM)
MAXIMUM RATINGS
2-506
2N3427, 2N3428 (continued)
Noise Figure NF dB
(V CE = 4.5 Vdc, IE = 0.5 mAde, R,s = 1 K ohms, f = 1 kHz •
.M =1 Hz) - 5.0 10
2-507
2N3427, 2N3428 (continued)
,
220 200
200 180
/ V
u; I'\. 8JC = 0.25°C/mW VeE =IV
/. /
to- 180 2N3428
\ /
" '" i
!;c 160
:I:
::: 160 / . ~3427
~ 140
r\: ~
::l
140
./ //
z: i'-.. -..;; ~ 120
0 120
V'
:;; V/
~
0. 100
I'\: ~
100
/. V
in
'"0
8J. = 0.375°C/mW"",- '\ ~ 80
80
V/
'"~
0
0.
60
40 '" """ I\.
I
.Y
60
40
h
~
20
,~
20 ~
o "\ oV
o w m ~ ~ w w ro w ~ ~ o 0,2 0,4 0,6 0,8 1.0 1.2 1.4
I,.BASE CURRENT {MILLIAMPERES)
TEMPERATURE (OC)
OUTPUT CURRENT versus BASE DRIVE VOLTAGE DC CURRENT GAIN "rsus COLLECTOR CURRENT
200 400
Ve ,= 1V / / 360 t'..... v',= IJ
2N3427 ;/ / 300
i'-..
)7 ~ 260
i'-- . . . r-., 1'---.2N3428
7 7,2N3428
I 200
.............
2Ni';v-- t.......
II g
J
160
""'"-
--- r-
r-- t--
W 100
~ 60
~
~
o oo ~ ~ ~ ~ ~
o 0.1 0,2 0,3 0,4 0,$ 0,6 20 40 60 80 200
2-508
2N3439 (SILICON)
2N3440
• MAXIMUM RATINGS
Rating Symbol 2N3439 2N3440 Unit
Collector-Em,tter ¥oltage
ColleCTor-Base Voltage
VCEO 3SO I 250 Vdo
Ve. 450 300 Vdo
Emitter-Base Voltage VEe 7.0 Vdo
___(;ollector Current - Continuous 'e 1.0 Ado
Base Current
Total Device DisSIpation @I T A "- 25°C '.
Po
0.5
1.0
Ado
Watts
Derate above 250 C 5.7 mW/oC
Total Device OISSiPOltlon@TC-25OC Po 10 Watts
Derate above 25°C 0.057 w/oe
Operating and Storage Junction Temperatura TJ, T$19 -65 to +200 oc
Range
THERMAL CHARACTERISTICS
CharacterBtic
Thermal Resistance, Junction to Case
::::~ ~
Thermal Resistance, Junction to Ambient
I
ELECTRICAL CHARACTERISTICS ITe-
'::;~{IT
250 C unless OlherWISI' noted)
~II~
ICEX ,Ado MIN
(VCE = 450 Vde, VSE(off) .. 1.5 Vdel 2N3439 500
(VCE = 300 Vdc, VSEloff) = 1.5 Vdel 2N3440 - 500
-Collector Cutoff Current STYLE I
(VCS .. 360 Vdc, IE .. 01 2N3439 ICBO 20 ,Ad< PIN I. EMITTER
(VCS .. 250 Vdc, IE "01 2N3440 2P 2. BASE
3. COLLECTOR
-Emlttat Cutoff Current IESO 20 ,Ad,
lYse" 6.0 Vde, IC .. 0)
ON CHARACTERISTICS (1)
DC Current Gain hFE
(Ie· 2.0 mAde, VCE" 10 Vdel 2N3439 30
-lie = 20 mAde, VeE'" 10 Vdc) Both Types 40 160
·Colleetor·Emlttar Saturation Voltage VCElsatl 0.5 Vdo
(lC • 60 mAde, 'S .. 4.0 mAde)
Sase·Emitter Saturation Volta. VSE(sat) 1.3 Vd,
(lC .. 50 mAde, la .. 4.0 mAde)
"DYNAMIC CHARACTERISTICS
Currant·Gain - Bandwidth Product tT 15 MH,
(lC = 10 mAde, VeE'" 10 Vde)
Output Capacitance Cob 10 OF
lYCB '" 10 Vde,le "O,t .,.0 MHz)
Input Capaeitanal 75 OF
(VES =6.0 Vdc,lC =0, f =. 1.0 MHz) Cib
Small1ignal Current Gain ht. 25
lie'" 5.0 mAde, VCE '" 10 Vtk:, f '" 1.0 kHz) All JEDEC dimensions and notes apply
Rql Part of Common Emitter SmaIl-5iFlal Re(hle' 300 Oh....
Short-Circuit I nput Impedance
(VCE" 10 Vde, IC = 5.0 mAde, f = 1.0 MHz I CASE 31
·'nd,catesJEOEC Reg,stared Data.
TO·5
(1) P",I_Tast: P",llaWldth,.300j.l.s. Duty Cyc'a~2.0%.
2-509
2N3439, 2N3440 (continued)
300 u; 1.0
200 +j~\~OOC - ~ 1\ 1\ TJ = 2SoC
z 100
n "- '"
~
w
<.0
0.8
\
\
I\ I II
200 rnA
<1
<.0 2S OC ~ 100 rnA
~ SO '"> 0.6
~ 30 ~. ffi
::
SOmA
\
'--
~ 20
..--:: \'
~ 0.4
20 rnA
1\ \
~\
c p..-= .... a: \[C=10m~ \
~ ~
10
~
_ 0.2
r-., I'...
r--.
"-
---
VCE 2.0 VOLTS
S.O
3.0
O.S
I IIII
1.0
VCE I 101 V~Lr~
2.0 S.O 10 20 SO 100 200 SOO
'"'-'
>
~ 0
0.1 0.2 O.S 1.0
-- 2.0 S.O 10 20 SO 100
1.0
TJ=2S oC II II I G
3;
+0.8
IIIII
JOV~ f~r ~CIE:S;tl
2~OC \0 js~ot Jt./
0.8 II II II ,.......... .5
+0.4 - )-
......-r.~
I I II l i l t
V '" ssoc to 2S0C _
- VBE(sat! @IcllB 10
~ III I
'"~
I-
O. 6
G
~ -0.4 I-- 'Applies lor ICIIB'; hFE/S
~
w
<.0
VBE(onl@VCE= 10V
/ 8
« ~ -0.8
~ 0.4
=>
/
-
'">
IC!IB =110 V ~ -1.2
,.....-
0.2
VCE(sat! .1.-1- ~ -1.6 r-- - eVB 10rVBE
f.- I-
o
2.0 3.0 S.O 10
I
20 30
Ic/lB - S.O
so 100 200
:>
'" -2.0
2.0 S.O 10 20
--- to- f- SO 100 200
"
.3 10
", " .,
I- ~TJ=150oC
7
~
=>
~ ."- ~. 1.0
" ", '" F ICES
~
=IC-2xICES 1000C
-
1
" "","-
8 o. 1
= t=IC ~ ICES ~
~ FRev,orse Forward::::::::
~
:....
40 80
" 120
. . . =---
160 200
0.0 1
+0.4 +0.3
2SoC
2-510
2N3439, 2N3440 (continued)
0.4 3.0
"-., ~CC' 15ri Volts
-
t'.., tr@le/IB' 10 VCC 150V-
--t-r-.I
--
0.3
"- 2.0 TJ = 250C-
"""""- "-", ~
td@VBE(off)' 5.0 V TJ'250C -
0.2 tsl@IC/I~~ 5.cito io
........ / IC/IB=lO I ~
1.0
]
"' O. 1
~ ~~
] 0.7
'" 0.07 ,, ,
S
0.03 f--td
/
0.05 r-tr@ ICIIB = 5.0
........
~
>=
0.5
0.3
0.2
...........
~
- .......
tl@ICIIB=10
_ L'
........
r---
r--
tl@IC/IB= 5.0- f - -
--
.,/'
0.02 ......
1.5 I I ......... O. 1
10 20 30 50 70 100 200 10 20 30 50 70 100 200
IC. COLLECTOR CURRENT (rnA) IC. COLLECTOR CURRENT (rnA)
PW=lO",
Duty Cycles"" 1.0%
tr = 1.0 ns
To Scope t;
=>
c
~
50
IC 10 rnA
,./
/~
ITVi\'CE
- r\
~ 30 / fTVS Ie
c
i< / /' VCE' 10 V
Turn-on Test: V2 = 5.0V c T = 250C
51 o //
Turn-off Test: V2 8.DV 51 ~ 2
1
">;:
I
-5.0V ':'
Diode Used For
Turn-off Test Only
'"
....
::5
'" 10
Note: Vee and RC adjusted for VeE(off) = 150 V and Ie as desired, '"=>
AB chosen for desired IS1. Vl "" lOY. ~ 7.0
1.0 2.0 5.0 10 20 50 100
IC. COLLECTOR CURRENT (rnA)
2.0 100
"
..3
"'
u
z
«
1.0
0.7
./
~
"'
30
f-
f- 0.5
u
z 20 ::::::
:;; «
....
~ f:::::
c e;
« ;;:
f-
0.3
./ Cob
~ ;3 10
f-
=>
c 0.2
r- 7.0 Ccb
.g I-
:>: 5.0 (C~)
"
0.1 3.0 ............
5.0 7.0 10 20 30 50 70 100 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200
2-511
2N3439, 2N3440 (continued)
I- 1. 0
~ o. 71 0-0.5
~ o. 5
,..-
fnn
::; ~ o. 3 0.2
p
~:i I- eJc(I) - r(I) eJC
~~ o. 2 t-- - eJC 8.5 "CIW TYP
0
0.1 :;:::::j:::'
~ ~ 0.1 1 - - - c- 0.05
c:;:
~ b o CURV~S APPLY FOR POWER
_PULSE TRAIN SHOWN
0.0 1
0.01 0.02 0.03
I 0.05
III 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000
t, TIME (m,1
1000 0
_ 500
«
5.0 ms
5001JS~
501JS~
10 IJS
1= -'" ~
1.Um'~Kl~i"< t- 0
~ 30o
z
20 o t'-.
t-
'\ I"'"
~ i"--
'"=>
~ 100
o
TJ';; 200 0 C ~c '\ 1\1\ 0
t-..,
t; Second Breakdown limit 0 ~
~ 50 - - Bending Wire Limited ""
8
!;}
01-- -
o
I I III
1111
- Thermally Limited (T C o25 0 CI
I I I I II
Curves apply below
rated ~CEO(fu,' I
I
2N3440-r- 0
"~
2N3439-+- t-
O
5.0 10 20 30 50
There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown.
Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the
transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 14 is based on TJ(pk) = 200o C; TC is variable depending on conditions. Second breakdown pulse limits
are valid for duty cycles to 10% provided T J(pk) =200oC. T J(pk) may be calculated from the. data in Figure 13. At high case
temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by
second breakdown. (See AN-415)
2N3444 (SILICON)
For Specifications, See 2N3252 Data.
2-512
2N3445 thru 2N3448 (SILICON)
CAS~
NPN silicon power transistors for switching and amplifier
applications requiring fast response, wide band and good
Beta linearity.
(TO-3)
Collector connected to case
MAXIMUM RATINGS
~j :~i""I:-Mlit@gl
POWER-TEMPERATURE
DERATING CURVE
i
::>
'"'"
1.0
0.7
O.S
Sms
-- ~
Ims
\ Sms
Ims
'" lines for specific circuits must
fall within the applicable Safe
Area to avoid causing a· col·
0
0.5ms lector-emitter short. (Duty
~ 0.3
cycl.e of tbe 'excursions make
;~251~1~
0.2 -"2S0;' " '
0
no significant change in these
'"..? 0.1 ~' safe areas.) To insure opera-
TJ ...:::::::175°C
0.07 ~ - - - TJ 2SOC
E TJ ..::::::175OC
tion below the maximum T J ,
- - - TJ 25°C
0.05 the power-temperature de-
0.01 ·1._....I._.....I_......L..._"-_.........;,1 -( ( rating curve must be ob·
o 10 20 30 40 50 60 0 10 20 30 40 50 60 70 80 served for both steady state
Ve., COLLECTOR·EMITTER VOLTAGE (VOLTS) and pulse power conditions.
2-513
2N3445 thru 2N3448 (continued)
-- -
(VCE • 80 Vde, VilE' -1 Vdc) 2N3448,2N3448 0.1
(VCE • 80 Vde, VilE' -1 Vde, TC • 1500 C)
Collector-Emitter Cutoff Current
2N3448,2N3448 - 1.0
mAde
leEO
(VCE • 40 Vde, I B ,. 0) 2N3445, 2N3447 - - 1.0
(VCE' 60 Vde,IB • 0) 2N3446, 2N3448 - - 1.0
Collector-Baae Breakdown Voltage BVCBO Vde
(IC • 1 mAde, IE' 0) 2N3445, 2N3447
2N3446, 2N3448
80
100
-- --
Collector-Emitter Sustaining Voltage Vdc
(Ie • 100 mAde, lB' 0) 2N3445, 2N3447
VCEO(sue)
60 -- -
2N3446, 2N3448 80 -
DC Current Gain hFE
(Ie • 0.5 Ade, VCE • 5 yde) 2N3445, 2N3446 20 45 -
(Ie • 3 Ade, VCE • 5 Vde)
2N3447,
2N3445,
2N3448
2N3446
40
20
85
40
-60
(Ie' 5 Adc, VCE • 5 Vde) 2N3447, 2N3448 40 75 120
Collector-Emitter Saturation Voltage VCE (sat) Vde
--
(Ie • 3 Ade, IB • 0.3 Ade) 2N3445, 2N3446 0.6 1.5
(Ie • 5 Adc, IB • 0.5 Ade) 2N3447, 2N3448 0.8 1.5
Base-Emitter Saturation Voltage VBE(sat) Vde
(IC' 3 Adc, IB • 0.3 Ade) 2N3445; 2N3446 - 1.0 1.5
(Ie ~ 5 Ade, IB • 0.5 Ade) 2N3447, 2N3448 - 1.0 1.5
Base-Emitter Voltage VBE Vde
(Ie = 3 Ade, VCE • 5 Vde) 2N3445, 2N3446 - 1.0 1.5
(Ie • 5 Ade, VCE • 5 Vde) 2N3447,.2N3448 - 1.0 1.4
Small Signal Current Gain
hre
(VCE' 10 Vde, Ie • 0.5 Ade, f • I kHz) 2N3445, 2N3446
2N3447, 2N3448
20
40
-- 100
200
(VCE' 10 Vde, Ie • 0.5 Ade, f • 10 MHz) 1.0 1.6 -
Common Base OUtput Capacitance Cob pF
(VCB' 10 Vde, f . 0.1 MHz) - 260 400
Switching Times p..
(VCC" 25 Vde, RL • 5 ohms, Ie • 5 A, IBI • IB2 • 0.5 A)
Delay Time plus RiJJe Time td +tr - 0.15 0.35
Storage Time t. - 0.9 2.0
Fall Time It - 0.15 0.35
10 10
....
5.0 ~ 2N3445, 2N3446
t-
t- VeE 5V
5.0
r=
t-
: 2N344'j:'2N3448
~ 2.0 c:-
~ 2.0
:5
.... 1.0 / +25°C :5
.... 1.0 ~? :OC
0.02 0.02
0.01
V
. 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 5001000
I., BASE CURRENT (rnA)
2-514
2N3445 thru 2N3448 (continued)
z
...~
40
---- ---
VCE = 5V
~ -- +25 O C
--- ..............
........
.........
- ----"
3D
----
i
:::>
~ I--
40°C
......
'"• 20
~ r- !'--or-.
10
o
0.1 0.2 0.3 0.4 0.5 0.7 1.0 2.0 3.0 4.0 5.0 7.0 10
Ie. COLLECTOR CURRENT (AMP)
100
z
:c
...
co
80
60
I--- 2N3~47, 2N3J48
r-- --
VcE =5V
~
- -- +25°C
-""'" ...........
........
..........
r-..
"
-
~0:
:::>
40°C
'" 40
J ~
........
20
o
0.1 0.2 0.3 0.4 0.5 0.7 1.0 2.0 3.0 4.0 5.0 7.0 10
Ie. COLLECTOR CURRENT (AMP)
\
It
1\ \
, , '\.
'.
",
I.....
i'
'. ........
,
0:
~ 0.6 '\ "
!
o 0.4 "
,
"
'\.. ..... " ......-
.~
~
~
8 0.2 -
TJ=25°C
2N3445, 2N3446
I\.
~.:-::--
- -
.....
"-
~
......
-
J 0
1
- - - 2N3447, 2N3448
10 20 3D 50 70 100 200 300 500 700 1000
I•• BASE CURRENT (mA)
2-515
2N3445 thru 2N3448 (continued)
i
u
1.0
+ 175 C/ +25°CI
0 j-40 0 C ~
a
30
20
/' ~
I
f
'"
~8
~
+175 0 C / +25 0 C! / -40°C
0.7 ~ 10
0.5 -
-2 0.3 I I
0.2 I I II I I
0.1
0.2
/ 0.4 0.6
I
0.8 1.0 1.2 1.4 0.2
I
0.4 0.6
I I
O.B 1.0 1.2
V", BASE·EMITTER VOLTAGE (VOLTS) V", BASE-EMITTER VOLTAGE (VOLTS)
:.Lrf
5000
l- V" OV +115V~ I ~- f=150Hz DUTYCYCLE=2%
WAVE SHAPE +30V
i
~
2000
1000 -~ I--I -
--.+..-
j
-9V
AT POINT A
5n
-
1..-1 4.8 4W
'"
;: 500 .-1.7ms
0"
ms
'"x
z lOOn
~
~
200
- I, ~ f-.... 1W
100 I,~ ~ ~
50
-l- t, f-- I-
20
10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
Ie, COLLECTOR CURRENT (AMP)
I>- 50 \ I
Vee=30V - -
II :~ 11~0
0.911,
L( 1
11 I 1.1
O.911,/IIJ
z
\ TJ = 25°C
1,= •• RII,-- 1\
~ \
z:
0
40
\ ::'"u ZoO
\
u ~
~ \. \
~
;::: 30 ;::: \
z
'\
0
'"
~
'">
20
i"..
.....
..""
~
1.5
\
.
t3
~
10
"- I"-...
o 1.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 1 7 10 20 30 50 70 100
Ie, COllECTOR CURRENT (AMP) 110/11,
2-516
2N3467, 2N3468 (SILICON)
2N3467 JAN AVAI LABlE
2N3468 JAN AVAilABLE
'"
'";:::
..,
100
70
- - - ..... /I. '- 10. 120
~
~
0
>
1.0
l-
~
~
VIlEI••,
I ~
-
M'N .J..--"'"
f..- .....
~
= to ~ i
0
:;; 50 I 1
~ ~
/1. 1 S 0.6
.... 1-- 2N3468 y . /
30
20
1',=1,-%1,
11,'= ~O
I I
II
J. 0.4
0.2
-
MAX VeE
I--: :;.....-"'"
~..Jo-"'"
2N3467
1 I
50 70 100 200 300 500 700 1000 50 70 100 200 300 500 700 1000
'e, COLLECTOR CURRENT (mAl 'e. COLLECTOR CURRENT (mAl
2-517
2N3467, 2N3468 (continued)
--
(Ie = 1 Ade, VCE = 5 Vdc) 2N3467 40
2N3468 25
Output Capacitance pF
(VCB = 10 Vde, IE = 0, f = 100 kHz)
Cob
- 25
Input Capacitance Cib pF
(V: EB = 0.5 Vdc, Ie .. 0, f = 100 kHz) - 100
--
<Ie= 50 mAde, VCE = 10 Vdc, f'= 100 MHz) 2N3467 175
2N3468 ~50
2-518
2N3467, 2N3468 (continued)
-- 2~34617I~-
- r--
T, = 125°C
I--- -- f- -
T, _ 25°C
-f--- - -~ -- ~ "- i'
I'
z
~
tE
~ 30
"\ "
~"
\
'"
.,
:::> T, = -55°C
-- --- - \ "r'\\ \
:e
:::>
:e
Z
~ 20
l- I-- .-f- - - -R ~. \ \'
~ t, 1\ ~\
.ll
10
~l\\\ \
50 70 lao 200 300 500 700 1000
Ie, COLLECTOR CURRENT (mAl
70
- V.,=IV
2J346J -
- - - V",=2V
50
T, = 125°C
- - - --- - -
~- r- -~ 1"- ........
--- f--
-- -- -- ---- - ~ r- .......
T, = 25°C
~
,
- - ~ ", \
"
r--- ,...- - - ~- f--- -- ---
T, = -55°C
1'\
- "" \
,~.
~~
............... ........
10
50 70 100 200
Ie. COlLECTOR CURRENT (IlIA)
2-519
300 SOD
" 700 1000
2N3485, A(SILICON)
2N3486, A
For Specifications, See 2N2904 Data.
CASE 9
(TO·61)
MAXIMUM RATINGS
2-520
2N3487 thru 2N3492 (continued)
2-521
2N3487 thru 2N3492 (continued)
120
2
~
'"
~
100
:0
.:"
0
80
~
~ t-......
oj
.~
is'"
60
... ...............
<J)
~ 40 ~
0 ..............
~ ......
~
"0 20
~
o
o 25 50 75 100 125 150
~200
175
o
T C ' Case Temperature ( C)
100
- r-...
----- ~ 2N3490
2N3491
c 80 2N3492 ~
~ ...........
I"- r'-
1:! I
~ 60
... ['.1"-
8
&i 40
~
..c
20
L----- ~
2N3487
2N3488
2N3489
- t- r-
i"'- t"
1'r-.
o
0.1 0.2 0.3 0.4 0.5 0.8 1. 0 2.0 3.0 4.0 5.0 8.0 10
I C ' Collector Current (Amps)
1:!<J) 1.0
5ms ~ 1/ 5ms ~ \\ I-*""" 5ms ~ \.\ /
...
":::J
U
0.5 1 1ms
== F1ms
~
...0
"i) 0.1 ~
~
'0 .05
u•
....u
.01
o 20 40 60 80 0 20 40 60 80 100 0 20 40 60 80 100 120
VCE Collector-Emitter Voltage (Volts)
2-522
2N3494 (SILICON)
thru
2N3497
!/
TO-18
2N3496
2N3497
h
'-
PD
Derate above 25°C 11.4 6.85 mW/oC 2N3496
2N3'497 l ~:~~ r-
Operating and Storage Junction TJ,T stg -65 to +200 °c ~:::OlAll DlA
Temperature Range
.
001901A
m--.l MIN
0.100
Pin 1. Emitter
2. Base 1
J. Collector
0.028
0.048
2-523
2N3494 thru 2N3497 (continued)
*ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Svmbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(11 BVCEO Vde
(lC = 10 mAde, IB = 0) 2N3494, 2N3496 80 -
2N3495, 2N3497 120 -
Collector-Base Breakdown Voltage BVCBO Vdc
(lC = 10 "Ade, IE = 0) 2N3494, 2N3496 80 -
2N3495, 2N3497 120 -
Emitter-Base Breakdown Voltage BVEBO 4.5 - Vde
liE = 10 "Ade, IC = 0)
Collector Cutoff Current ICBO nAde
(VCB = 50 Vde, IE = 0) 2N3494, 2N3496 - 100
(VCB = 90 Vde, IE = 0) 2N3495, 2N3497 - 100
Emitter Cutoff Current lEBO - 25 nAde
(VBE = 3.0 Vde, IC = 0)
ON CHARACTERISTICS
DC Current Gain( 1) hFE -
(lC = 100 "Ade, VCE = 10 Vde) All Types 35 -
(IC = 1.0 mAde, VCE = 10 Vde) All Types 40 -
(lC = 10 mAde, VCE = 10 Vdo) All Types 40 -
(lC = 50 mAde, VCE = 10 Vde) All Types 40 -
(lC = 100 mAde, VCE = 10 Vde) 2N3494,2N3496 35 -
Collector-Emitter Saturation Voltage VCE(sat) Vde
IIC = 10 mAde, IB = 1.0 mAde) 2N3494,2N3496 - 0.3
2N3495,2N3497 - 0.35
Base-Emitter Saturation Voltage VBE(sat) 0.6 0.9 Vde
(lC = 10 mAde, IB = 1.0 mAde)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Produet(2/ fT MHz
IIC = 20 mAde, VCE = 10 Vde, f = 100 MHz) 2N3494, 2N3496 200 -
2N3495, 2N3497 150 -
Output Capacitance Cob pF
(VCB = 10 Vde, IE = 0, f = 100 kHz) 2N3494, 2N3496 - 7.0
2N3495, 2N3497 - 6.0
I nput Capacitance Cib - 30 pF
(VSE = 2.0 Vde, ic = 0, f = 100 kHz)
I nput Impedance hie 0.1 1.2 k ohms
IIC= 10 mAde, VCE = 10Vde,f= 1.0kHz)
Voltage Feedback Ratio h re - 2.0 X 10-4
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Small-Signal Current Gain hfe 40 300 -
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Output Admittance hoe - 300 ",mhos
(lC = 10 mAde, VCE = 10 Vde, f = 1.0 kHz)
Real Part of I nput I mpedanee Re(hie) - 30 Ohms
(lC = 20 mAde, VCE = 10 Vde, f = 300 MHz)
SWITCHING CHARACTERISTICS
Turn-On Time ton - 300 ns
(Vce= 30Vde,IC= 10mAde,IBI = 10 mAde) (See Figure 1)
Turn-Off Time toff - 1000 ns
(Vee = 30 Vde,lc = 10 mAde, lSI = IS2 = 1.0 mAde) (See Figure 2)
III r-
FIGURE 1 - TURN-ON TIME TEST CIRCUIT FIGURE 2 - TURN-OFF TIME TEST CIRCUIT
I ~. 10 k I
;*~ C, < 3.0 pF ;1~Cs<3.0pF
10 k I -IO~" i-- 13 I
__ ...I
1O~'';" ';500~, IN916 ---'
tr< lOos
t2 < 10 ns
11,,10", '3'; 1.0~,
DUTY CYCLE.; 2.0%
DUTY CYCLE'; 10%
2-524
2N3498 thru 2N3S01 (SILICON)
JAN, JTX AVAILABLE
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
eJC
2N3498
2N3499
35
I 2N3500
2N3501 Unit
"C/W
+0.5
1I
Ivc for Vel 1"'1 ,."
,."
~ ~toI125OC)
I I 50
.....
,." (2S 0 C 10 -5S0C)
~ 0
V Ci....... 1oo,
i
-- --
20
-I"-
~u -0.5 ..
.....~ 2N349a. 2N3499
~u
II! -1.0
=> (2S"C to -SS"Cj
"",-
-
Iv. for YIE ,...,
- 10 ..
C..
~
~ -1.5
1A~
5.0
......
....
i'ooo
" -2.0
02:C 10 125°C)
2.0
2N3500. 2N3501
-2.5 1.0
o 100 200 300 400 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Ie. COLLECTOR CURRENT (mA) REVERSE alAS (VOLTS)
2-525
2N3498 thru 2N3501 (continued)
ON CHARACTERISTICS
DC Current Gain 111
(Ie hFE -
= 0.1 mAde, VCE = 10 Vde) 2N3498, 2N3500 20 -
2N3499, 2N3501 35 -
(IC = 1. 0 mAde, VCE = 10 Vde) 2N3498, 2N3500 25 -
2N3499, 2N3501 50 -
(IC = 10 mAde, VCE = 10 Vde) 2N3498, 2N3500 35 -
2N3499, 2N3501 75 -
(IC = 150 mAdc, VCE = 10 Vdc) 2N3498, 2N3500 40 120
2N3499, 2N3501 100 300
(IC = 300 mAde, VCE = 10 Vde) 2N3500 15 -
2N3501 20 -
(IC = 500 mAde, VCE = 10 Vde) 2N3498 15 -
2N3499 20 -
Collector-Emitter Saturation Voltage 111 Vde
VCE(sat)
(IC = 10 mAde, IB = 1. 0 mAdc) - 0.2
(Ie = 50 mAdc, Ia = 5.0 mAde) - 0.25
(IC = 150, mA-de, IB = 15 mAde) 2N3500, 2N3501 - 0.4
(IC = 300 mAde, IB = 30 mAde) 2N3498, 2N3499 - 0.6
tIl Pulse Test: Pulse Width;;; 300 IJB, Duty Cycle;;; 2.0%.
2-526
2N34981hru 2N3501 (continued)
~. = 10 J
I - I"-
I\. ...........
TJ = 25°C I t, .........
1.0
1'\
'"
ALL TYPES';
en
~
0.8
.... '"
I
200
"'\1'\ ~
~
1\ i'-
n
~
V" ", 10 0
'"
4
~
6-
-I-'"
"\.
, t,
... ./
~ 0
"\,1\
! iN3501 ..... V
0 1\.\
\' /
4
~V
2N3500
1
:-. 71} Vcc::;:;:lOOV
V.E =2 V
~
Ie ~ 10 III
O. 2 Veo _ , ~<
~Ni4~81
...
..tt.
2N~49r
0
1•• := III
1'\
I-'
~
0 0
1.0 2.0 5.0 10 20 50 100 200 500 10 20 50 100 200 300
Ie. COLLECTOR CURRENT (mAl Ie. COLLECTOR CURRENT (mAl
2-527
2N3498 thru 2N3501 (continued)
----
15
...Ii ~
20
"~
10
10 20
Ie. COllECTOR CURRENT (mA)
50 100 200
~ 500
300
200
TJ = 125°C ~N34~ _
Vet 2V
E
~ 100
TJ _ 25°C
" .... ~
...
ill TJ 55°C
II!
::>
~
'"'"
Q
50 "~
j .............. ~
~
20
""
~
10
1 10 20 50 100 200 500
Ie. COlLECTOR CURRENT (mA)
§
O.S - ....
......
2-528
2N3498 thru 2N3501 (continued)
---
Q
1 ~
20 ~~
~~
10 ~~
I 10 20 50 100 200 500
Ie. COLLECTOR CURRENT (mAl
200
I I I
125·C
,
T.
2N3501 _
....
T. ~ 25.C I I""- Vet = 2 V
z 100
ii
~ T, = -55·C
~
...'"..,
:::> 50
.........
Q
""
Ii ~
""~
20 ~
.
""~
10
1 10 20 50 100 200
~ 500
Ie. COLLECTOR CURRENT (mAl
2N3500·2N3501
0 T, 25·C -
.".
" ~ =IOV-
r-.
.. ."......
" et L
'\I
Ve.=IV~ l'...
O. I
I": ~
10 20 50 :00 200 500
Ie. COLLECTOR CURRENT (mAl
2-529
2N3498 thru 2N3501 (continued)
20 0 20
I/~
2N3499,2N3501......... ~~
2N3499,2N350Y V
V~
10
.:. 10 0 ./
-- -
.l:
,..,. .....
..... i"""" ./
I-
5.0
..,.'- 2N3498,2N3500
i-'
:.,.....- .....
2N3498, 2N3500
~
0
..,........- ..,.
2.0
20 1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2. 5.0 10
1\
01\ ~ 20
"'1\
\. '\.
'\. " :\ \ 2N3499,2N3501
;;;
5. 0
\ " 1\ 2N3499, 2N3501
10
~ \.
'". 2N3498,2N3500
r\.
"
1
5.0
"-
.l:
2. 0 r'\
r\. I\.
I. 0
1\[\
2.0
2N3498,2N350 01\.
" i'
O. 7
O. 5
0.4
0.1 0.2 0.5 1.0 2.0
1'-
!'
5.0 lO
1.0
0.5
0.1 0.2 0.5 1.0 2.0
" 5.0 10
2-530
2N3506, 2N3507 (SILICON)
CASE 31
(TO·S)
Collector connected to case
MAXIMUM RATINGS
1.4
f----J. ~ 10
1.2 f-- TJ ~ 25°C
I
I
V'EII~ L
f"'"
100
0""
....
~
t.. Vee
~ .Ie ~
30V -
2V -
101,,-
--
r I" ~I .. -
1.0
toO' o t, ,I
iIlIIt... I T ~ 25°~_
J
0.8
L
-I.
~
-
'-
~ t'-..
t. t. l-\l, -r--
-"
0
0.6 Ve'lwII/
.L ~
I'.. r--- t,
0.4 L 0 ~
...... t,
1 r-
.; o. 2
t."'I"
0 10 "I
0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0
Ie. COLLECTOR CURRENT lAde) Ie. COLLECTOR CURRENT lAde)
2-531
2N3506, 2N3507 (continued)
2-532
2N3506, 2N3507 (continued)
CURRENT GAIN CHARACTERISTICS
200 200
TJ =\25·C i 2N3506 I I 2N3507
t-
t-- TJ = 12'·C
Ff4::t- t"--t--
VeE-IV --VCE=JV
I t-- t- r-.,.... t--. --VeE=2V --Ve.""2V
TJ = 2,OC
100
f - - TJ=-IIOC
- "-
".......
t-.....~
100
t-- \,';' 2'·C
t-- TJ I=_,;.C
I-
r--.
I'
'.
--
0
.... :'\.. "\. o .-
" 1\.
~ I--.~ 1',\ I"-r-. '\."
r" "'-. ~ '1\
20
01 02 03 0., 1.0 20 3.0
20
0.1 0.2 0.3 os 1.0
"'~ p~
20 30
2N3508 (SILICON)
2N3509
CASE 26
(TO·.0t6)
Collector connected to case
MAXIMUM RATINGS
2-533
2N3508, 2N3509 (continued)
VBE(sat) Vdc
(Ie = 10 mAde, Iy = 1 mAde) 0.70 0.85
(IC = 100 mAdc, B = 10 mAdc) 0.8 1.4
De Current Gain 11)
(Ie = 10 mAdc, VCE = 1.0 Vdc) 2N350B
hFE
40 120
-
2N3509 100 300
(Ie = 10 mAdc, VCE = 1.0 Vdc, T A :; _550 C) 2N3508
2N3509
20
40
-
-
(Ie = 100 mAdc, VCE :; 1.0 Vdc) 2N3508 20 -
2N3509 30 -
Small-Signal Current Gain
(Ie = 10 mAdc, VCE = 10 Vdc, f =100 MHz)
hte
5.0 - -
Output Capacitance Cob pF
(VCB = 5 Vdc, IE = 0, f = 140 kHz) - 4.0
Input Capacitance C ib pF
(VSE = 1 Vdc,Ie :; 0, f = 140 kHz)
Storage Time
- 4.0
ta(T.) ns
(Ie = IB1 = IB2 = 10 mAl
Turn-On Time
- 13
ton nB
(Ie = 10 mA, IB1 = 3 mA, VCC = 3 V, VOB = 1.5 V) - 12
Turn-Off Time loff ns
(Ie = 10 mA, IBI = 3 mA, IB2 = 1.5 mA, VCC = 3 V) - 18
Total Control Charge Qor pC
(Ie = 10 mA, IB = 1 mAo Vee = 3 V) - 50
Delay Time
Vec = 10 V, VEB:; 2 V,
~ - 5.0 ns
Ie = 100 mA, IB1 :; 10 mA
Rise Time
tr - 18 ns
Storage Time
VCC = 10 V
~ - 13 ns
2-534
2N3508, 2N3509 (continued)
2J350~
SO
r-T~ 12S+,~=_;~~ =
-- I I
z j.--- T, 2SoC/
-ISOC~
---
'"'"'
i v:::::
30 T, T, = 2SoC & 7SoC f-
--- ---
~
r----~ ~
r-- ~~~
~
~
"~
V--
"""I
...-
20
10
----
----
V ---
L-- I--
!---
- --- -... f""::
r-...
T,=r::
.........
r--.... ~ :::::...
l- I-- ...... 1---
-I-
10 20 30 so 70 100
Ie, COLLEClOR CURRENT (mAl
200
-- --
70
~
\
'"""'" :::;
)
~ ~-
f-""" ~ f-.(
"
~ SO
..........
I-...... """"
--
"
"'"
30
20
---
,.,-
- f..--
~S~
r-..
~
"'" ........ ........ ~""
......
...... .....,
I 10 20 30 SO 70 100
Ie, COLLECTOR CURRENT (mAl
~, 10
I
70
Vee 10 V
fVI f--~: ~ ~~oC
50
"
,I, YEI ~
~w
1.2 . TIl
IMAXVj"yLt
30 "'-1\ b(t, 1.0
t3 20 I -
t, (Vee = 3 vi" t,
~> l/1'
-I
.~ t'- IJ Vcc=lOV I-- I I
"
;::
,......
z
0 0.8 MIN VaE (,~tl
L--~;:"
i==
'":i:z 10
I" t-......
~
......
r= I.- ~ I-
~ 7
~ 0.6
t, 1
>
~
0.4
(~"
b--' I--"" MAX VeE
~
2 I
I 0.2
S 7 10 20 30 SO 70 100 I S 7 10 20 30 50" 70 100
Ie. COLLEGTOR CURRENT (mAl Ie, COLLECTOR CURRENT (mAl
2-535
2N3510 (SILICON)
2N3511
2N3647
2N3648 NPN silicon annular transistors for high-speed satu-
rated switching applications to 500 rnA.
Zll3511 "
\ 2II3MI
UfU10 . . .,
CASE 27 CASE 26
(TO·52) (TO·46)
ColI.ctor connect.d to CII ••
MAXIMUM RATINGS
Rating Symbol
2N3510 2N3511
2N3647 2N3648 Unit
TO-46 TO-52
2N3647 2N3510
2N3648 2N3511
Total Device Dissipation @TA = 25°C PD 400 360 mW
Derating Factor Above 25°C 2.28 2.06 mW/oC
Total Device Dissipation @T C = 25°C PD 2.0 1.2 watts
Derating Factor Above 25°C 11.43 6.9 mW/oC
10 :~ -"" - .... ~
~ 1.2
T,~
10 I
- :_J/,~25°C
II
p, 10
~~ .....
-.
1.0
~ p,= o.
i-" V
io"""
I'1
0.8
0.6
MAX VaElla!!,...
MIN VaEhatl
~
I.'-I.-Itt,
111=112 ;: I
I
IImf
--T,=2S 0 C
0.4
1-"11 MAX Veer",+! V
2 V- II T,=12S 0 C
Vee --,6 V
0.2
1 2 3 5 7 10 20 30 50 70 100 200 300 500 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
2-536
2N3510, 2N3511 , 2N3647, 2N3648 (continued)
Turn-On Time
VCC = 6 V) 2N3510, 2N3647 - 20
2N3511, 2N3648 ton - 16
ns
Turn-Off Time
2N3510, 2N3647
2N3511. 2N3648 toff -- 25
18 ns
2-537
2N3510, 2N3511 , 2N3647, 2N3648 (continued)
,
--
~ ~
2N3511
- r-i==- -
2N3648
l- ...-"-
------ -- --
I Ye,= I Y -
30
~
'"
1§
'"
~
~
~
u
10
V
~
:,...- ......
- ~-
J I
_r-
- "'-, ~
'\
I\.
-
1i
lk-
'"z ,....... ...-...- \
---- - -
:;;
~ _r- ............... !\
V
£,
,..- "'-
'" ""\
10
I-
I- 'I\. "\
~ !\
50
-
2N3510
2N3647
r-..
",
30 Ye ,= I Y -
f-'TJ ~ 125°C
.- f-I-
z
1§
V I-
,......-
r-±== - i
l- f-- ~,
z
!1i
'"
z
:;;
20
V-
~
-
--- -
- ,......-
,..-f-
~
IJ
-r-
- '"'"
\
1\
\
- -
'"
:,...-f-
-- - --
~
-
£,
.- ...-...- I -....., [\
, ""\
10
..I--- ~ ~
.... ,.-"'" TJ -55°C
,....- I-- !\ \
,......- '\
10 20 30 50 70 100 200 300 500
2-538
2N3544 (SILICON)
CASE 22
(TO-18) \
Collector connected to case
MAXIMUM RATINGS
NPN silicon annular transistor for VHF and UHF
oscillator applications.
TEST CIRCUIT
SHORT
SOU AOJUSTABll LINE
330 pf
SOU
lKU
POWER METER
r-1o_oO_p_f______________~____~~1O~0~OP~f I~--~~::::::~t:==--~--------------~
UK me CAVITY)
v" Vee
+- + NOTES,
I. SET Vee= 12 Vde.
2. ADJUST V" fOR ie= 12 mAde.
3. SET ADJUSTABLE LINE FOR
MAXiMUM POWER OUTPUT.
2-539
2N3544 (continued)
Collector-Base
Breakdown Voltage BVCBO IC = 10 /.LAdc, IE = 0 25 30 -- Vdc
Collector- Emitter
Breakdown Voltage
BVCES IC = 10 /-LA, VBE = 0 25 30 -- Vdc
Collector Cutoff Current ICBO VCB = 15 Vdc, IE = 0 --- 0.01 0.1 /.LAdc
2-540
2N3546 (SILICON)
MAXIMUM RATINGS
2-541
2N3546 (continued)
2-542
2N3546 (continued)
FIGURE 1 FIGURE 2
LIMITS OF SATURATION VOLTAGES STORAGE TIME BEHAVIOR
1.6 30
-
rP'~ 10
1.4 I- TJ ~ 25°C
V 20 --f~:-
-.Ll~10
b.< ..... - -
i'
.,...~,~ 20':::::-'" r-- .... ....... ..... r--- I"r ...
1.2
~ V
~ ~
, I, ...... ~ ........ -...... r-.
~
,/
1.0 1' ..
~ ......... ....... 1',,-
...... f'
r-r- r- MAX V8Et5..tl I, =I,-'Iot/
181 =112 ............. r-....
z
51
0.8
I I 10 - - TJ =2SoC
r-....
~ - - - TJ -= 125°C .......
Si 0.6 = r--- f- MIN VaElutl .......
"i
,; 0.4 " r\
0.2 - r--- r- M~X Ve~I"~1 ~ 5
10 20 30 50 70 100
0 Ie, COLLECTOR CURRENT (mAl
1.0 2.0 5.0 10 20 50 100
Ie. COLLECTOR CURRENT (mAl
I
;*~ Cs":IOpf
I
.... ~
Y
.. +2YQ-F
-IO.avU
PULSE WIDTH - 200 III
~ _,u;n
PULSE WIDTH = 200 III
PULSE WIDTH > 200 III
R1S£ TIME < 1111
z..-500
.- ..- f - - - -- - r-- -
TJ = 125°C --Ve,=IV
-...::: -
- - - Ve,=2V
~- t-
0
- -- ~ 1' .....
-
,:::::::.;:- =25°C ....... .......
0~ - TJ
- ,- ~
""
-- - -- ~-
~ ' ....
..---
.-.:
............. '~~
0
O~
.-- .....
TJ = -55°C
.....r.....
7 I'.
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
Ie;. COLLECTOR CURRENT !mAl
2-543
2N3553 (SILICON)
2-544
2N3611 thru 2N 3614 (GERMANIUM) PNP germanium power transistors
for switching and amplifier applications.
MAXIMUM RATINGS
Rating Symbol
2N3611 2N3612 Unit
2N3613 2N3614
Collector-Emitter Voltage VCES 30 45 Vdc
Collector-Emitter Voltage (Open Base) VCEO 25 35 Vdc
Collector-Base Voltage VCB 40 60 Vdc
Emitter-Base Voltage VEB 20 30 Vdc
Collector Current (Continuous) Ie 7.0 Adc
Peak Collector Current (PW ~ 5 msec) Ie 15 Adc
Base Current (Continuous) IB 2.0 Adc
Storage Temperature Range Tstg -65 to +110 °c
Operating Case Temperature Range TC -65 to +110 °c
Total Device Dissipation @ TC = 25°C PD 77 watts
Derate above T C = 25°C 1.0 wloe
-
""- DC , ""
1. . . . . . . . . . 5ms
"I\. \ \
\\\ \
fC
~
0-
~
"
"Jms
i'-..
DC
~
~'\ i'-
'\. I'\.
.1\.
'\r--..1\.\
" "'"
2
'\ 13 1.5
'\.
~LOW EXPANDED ~
"!!!V "-.,
CURRENT AREA
1
SEE NOTE
'" '\...\
'\.
\
:='"'-'
~ 0.7
2 0.5
I
1 SAF~1
EXPANDED ........ '
LOW CURRENT AREA
SEE NOTE
'" '\.
\\
"- \\
~
SAFE \
AREA
\ AREA
'\ "'-,
~"-"'l
L
='¥~~
2""'_1
0.3 0.3
0.2
o Ic.oUMIT \ 0.2 i\\
0 1 3041V o f 45 60/
0.15 0.15
0.1 --r 0.1 ---r ---1 \
o 10 15 20 25 30 o 10 15 20 25 30 35 40 45
VCE. COLLECTOR·EMITIER VOLTAGE (VOLTS) VeE. COLLECTOR·EMITIER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate current has been reduced to 20 rnA or less before or
IccVCE limits below which the device will not go into at the BVCES limit; then· and only then may the load
secondary breakdown. Collector load lines for specific
circuits must fall within the applicable Safe Area to line be extended to the absolute maximum voltage rat-
avoid causing a collector-emitter short. (Case. tempera- ing of BVeRo. To insure operation below the maximum
ture and duty cycle of the excursions make no signifi- T J • the power-temperalure derating curve must be ob-
cant change in these safe areas.) The load line may served for both steady state and pulse power condi-
exceed the BVCES voltage limit only if the collector tions.
2-545
2N3611 thru 2N3614 (continued)
ELECTRICAL CHARACTERISTICS
- 10
DC Current Gain
(~= 3 Adc, VCE = 2 Vdc) 2N36ll, 2N3612
hFE
35 70
-
2N3613, 2N3614 60 120
--
(~= 7 Adc, VCE = 2 Vdc) 2N36ll, 2N3612 20
2N3613, .2N3614 30
2-546
2N3611 thru 2N3614 (continued)
--
0::
'"5z I, r-
><
~
=
~
=
::>
TJ=+loooCtV /OOC
u 1.0
= .........
~
8
I
/' ,......"
.2
0.5
0.3 /
/
/
/
/
I
-
f - - ,.....-
,--t-"If
f...-
1.0
I
0.3 0.5 0.7 1.0 2.0
Ie, COLLECTOR CURRENT (AMP)
I I I
3.0 5.06.0
- -
200
I
f--
V r-- VeE=2V
--- - -
r--
------
r-- TJ = 100°C
r--.....
r---- t:- :--
-r--
25°C
40°C
hfE ~ Ie - leBO
-I,+le,o
i 0.5
~{
I \
~~ \ I
I
\
z
'"
0.4
r, , I
I
\~\ '\" " -- 25°C TJ
- - - 100°C
~
I - - ---40°C
I ....
0.3
' .........
'~
~ ~ '0 t-...........
~~ ~~ - -,
g
0.2
~ ~ .:,;;:;. ~.... ~ -
.....
-
-- - ---
-r--f-
t- 1- -
-- le=7A
_
8
0.1 --- - - -----
.....
"-
- leilA
--- -
- .1--
Irr
---
.! 0
:E 5 10 20 30 50 70 100 200 300 500 700 1000 2000
I" BASE CURRENT (mAl
2-547
2N3615 thru 2N3618 (GERMANIUM)
PNP germanium power transistors for switching and
amplifier applications.
MAXIMUM RATINGS
2N3615 2N3616 Unit
Rating Symbol 2N3618
2N3617
Collector-Emitter Voltage VCES 60 75 Vdc
Collector-Emitter Voltage VCEO 50 60 Vdc
(Open Base)
Collector-Base Voltage VCB 80 100 Vdc
Emitter-Base Voltage VEB 40 50 Vdc
Collector Current (Continuous) IC 7.0 Adc
Peak Collector Current IC 15 Adc
(PW ~ 5 msec)
Base Current (Continuous) IB 2.0 Adc
storage Temperature -65 to+ 110 ~C
Tstg
Operating Case Temperature TC -65 to+ll0 -Uc
Total Device Dissipation PD Watts
@TC = 25 0 C 77
Derate above 25 0 C 1.0 W/oC
Thermal Resistance, ()JC 1.0 °C/W
Junction to Case
Thermal ReSistance, ()CA 32.7 °C/W
Case to Ambient
o
2
60
40
20
o
IA
--- ............
-r---.:::-- ~
~
------~......... r:=::....
o 25 50 75 100 110 125
TEMPERATURE (OC)
These transistors are also subject to safe area curves.
Both limits are applicable and must be observed.
2-548
2N3615 thru 2N3618 (continued)
2-549
2N3615 thru 2N3618 (continued)
500".s
"- 5OO"s .....
" ~
.......
"- "- I'\.I
~ '""- ,,,,-
" r'\.~ms '""-
"
"'-5ms /C
~
r
5
DC~ [",-
I "'-
'"
DC" .....
~ !2: f\.
::::>
u
e'"
~
1.5
0.7
LOW EXPANDED ~
CURRENT AREA '" '" .......
'\.\
\. ~
a
R~
_ 0.7
1.5
\'"
u
.....
" 1"- "
,
~
GM~
0.5
1~~~1
~ 0.5
I'... \'
0.3
H "'-..... , "'- AREA 20 A I '\ "'-
~'M'3
0.3
J ~/
""
0.2 0.2
o f 60 80/ o 75 100/1
"-
'" 1\
0.1
10 20 30 40
VeE. COLLECTOR·EMmER VOLTAGE (VOLTS)
le-VcE limits below which the device will not go into at the BV CES limit; then and only then may the load
secondary breakdown. Collector load lines for specific line be extended to the absolute maximum voltage rat-
circuits must fall within the applicable Safe Area to
avoid causing a collector-emitter short. (Case tempera- ing of BVCBO' To insure operation below the maximum
ture and duty cycle of the excursions make no signifi- T J • the power-temperature derating curve must be ob-
cant change in these safe areas.) The load line may served for both steady state and pulse power condi-
exceed the BVOF:. voltage limit only if the collector tions.
~
~
150 H-+k
+25°C
--- - r-
VeE = 2V
hFE 1_ . I~ -
Ia +ICBO
bo. _
::::>
u
1S
1-
100
50
-40°C r- t--
- I'-...
c:::::-: ~
I--
0.01 0.015 0.02 0.03 0.05 0.1 0.15 0.2 0.3 0.5 1.0 1.5 2.0 3.0 5.0 10.0
Ie. COLLECTOR CURRENT (AMP)
~~ 0.4
\ \\ ,,
is
i
::::>
~
0.3
"- , \
"\ I~ j'I.
\
\~
,
'"
'-. ~ ::-
, ,
le...=7A
-
"
ffi
t: 0.2
i'!l
~
~ 0.1
- - +25°CTJ
- - __ -40°C
- - - +loo°C
"
- " .
" ~ ~ ::::::
-"':"-
"'"
~
--
...... -~
:::::.-:
=-' .le=l(
le=3A
1 0
~ 1 1.5 to 15 20 30 so 70 100 ISO 200 300 500 700 1000
I,. BASE CURRENT (mA)
2-550
2N3615 thru 2N3618 (continued)
COLLECTOR CURRENT versus BASE·EMITTER VOLTAGE BASE CURRENT versus BASE·EMITTER VOLTAGE
10 300
200
V
l'l~
./ ~
5.0
./
'/
/. 1/
100 /
3.0
V /
r;:: 2.0
VV / 50
/
L
/
/ L
'"5
~ V/ lic I /V
/
+ic'j
:> TJ=+J00°C/+25°C
<.> 1.0
I
~ TJ = +JOO·~/J W -40·C
~ 0.5 L
.!J / / /
1I / / 5.0
0.3 / /
V
0.2
/ II VCE=2V
3.0
Ii
I
I/
/ /
VCE~2V
0.1 /
0.2
/ 0.4
I 0.6
V,. BASE:EMIITER VOLTAGE (VOLTS)
0.8 1.0
1.0
0.1
I
I
I
0.2
V/ 0.3 0.4 0.5 0.6 0.7 0.8
VIE. BASE·EMITTER VOLTAGE (VOLTS)
0.9 1.0
NOTE 1 - Dotted line indicates Metered Base Current plus the leB" of the transistor at 100°C.
300
7 7 7
TYPICAL SWITCHING TIMES 200
100 / / /
15
50
30
20
/ / /
10
/
10
/ / 7
;;;:
./ .s 5.0 I=TJ +JOO·C
V ~ 3.0
B 2.0 I /
/ '" I~·C V /
t- ~t- V ./
V ~
~ 1.0
/p ~V
8 0.5
.!J 0.3
I
I- ~~
I- ~ 0.2
I
kt: 0.1
2.5
[7
0.3 0.5 0.7 1.0
rTr
2.0
Ic. COLLECTOR CURRENT !AMP)
3.0 5.0 1.0
0.05
0.03
0.02
0.01
0.3
~25·C
0.2
I
0.1 -0.\
VIE. BASE·EMIITER VOLTAGE (VOLTS)
-0.2
VCE - 'n VCEO-
-0.3
2-551
2N3632
For Specifications, See 2N3375 Data.
CASE 31
(TO·S)
MAXIMUM RATINGS
0
...........
- c;:- t;
~ 200 , ", ~
I
0 r.....
,1~
~
c•• 1\ i!J 100
/
7
0
70
./
/ ""
5
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
50
1.0 " 2.0 3.0 5.0 7.0 10 20 30 50 70 100
2-552
2N3634 thru 2N3637 (continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltagel1i - BVCEO Vde
(IC = 10 mAde, IB = 0) 2N3634, 2N3635 140 -
2N3636, 2N3637 175 -
Collector-Base Breakdown Voltage - BVCBO Vde
(IC = 100 !lAde, IE = 0) 2N3634, 2N3635 140 -
2N3636, 2N3637 175 -
Emitter-Base Breakdown Voltage - BV EBO Vde
(IE = 10 !lAde, IC = 0) 5.0 -
Collector Cutoff CUrrent - ICBO nAde
(VCB = 100 Vde, IE = 0) - 100
ON CHARACTERISTICS
DC Current Gain (1 I 3,4,5,6 hFE -
(IC = 0.1 mAde, VCE = 10 Vdc) 2N3634, 2N3636 40· -
2N3635, 2N3637 80 -
(IC = 1. 0 mAde, VCE = 10 Vde) 2N3634, 2N3636 45 -
2N3635, 2N3637 90 -
(IC = 10 mAde, VCE = 10 Vde) 2N3634, 2N3636 50 -
2N3635, 2N3637 100 -
(IC " 50 mAde, VCE " 10 Vde) 2N3634, 2N3636 50 150
2N3635, 2N3637 100 300
(IC = 150 mAde, VCE = 10 Vde) 2N3634, 2N3636 25 -
2N3635, 2N3637 50 -
Collector-Emitter Saturation Voltage 1'1 11,12 VCE(sat) Vdc
(IC = 10 mAde, IB = 1. 0 mAde) - 0.3
(IC = 50 mAde, IB = 5.0 mAde) - 0.5
SMALL·SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product 2 IT MHz
(VCE = 30 Vdc, IC = 30 mAde, I = 100 MHz)
2N3634, 2N3636 150 -
2N3635, 2N3637 200 -
Output Capacitance 1 Cob pF
(VCB " 20 Vde, IE = 0, I = 100 kHz) - 10
Input Capacitance 1 C ib pF
(V BE = 1.0 Vde, IC = 0, 1= 100 kHz) - 75
Noise Figure - NF dB
(IC = 0.5 mAde, VCE = 10 Vde, RS = 1. 0 k ohms, - 3.0
f " 1. 0 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time (VCC = 100 Vde, VBE = 4.0 Vdc,
2-553
2N3634 thru 2N3637 (continued)
T, = 125'C
i 100
t5 70
~ 50 T,-25't- -... .......
8
1 0 T, = 55'C ....... "- ...... '"
~
....... i'~
20
~ t:-.......
I0
I"":
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLlECTORCURROO (rnA)
300
2N3635
200 T, 125'C VCE= 2.0V
I"-...
~ t--..
T, 25'C
I
i 100
~, 55'C
15 70
"-
58 ......
1
50
i'...'"~
"- ~
0
20 ~
I0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
(C, COllECTOR CURRENT (mAl
l.0 r
o. 7 ........
..... .....
VeE~ 10V~
o. 5 .........
............
.........
" ..... VeE ~ 2.0V
o. 3 "-
O. 2
NORMALIZED TO VeE = 10 V Ie =50 mA ...... ~
t'--..~
VeE = l.Ov..............
c-......
~
O. I
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
2-554
2N3634 thru 2N3637 (continued)
TJ -12S"C
0
~ ~
TJ 2S"C
"- r-.
["0". i"'o..
30
TJ SS"C
r-...: t-- t'-
0
r-.. ~'" r-..
I0
"'~"
~~
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
300
TJ - 12S"C 2N3637
ZOO VCI- 2.0V
..... r--.,.
~
TJ 2S"C .........
0 TJ SS"C'
I
"
I.....
0 I'.~"'
l'-['
0 "'~
0
~~
~
10
1.0 2.0 3.0 S.O 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (rnA)
1.0
0.2
I
........
I r--. 'r-.. I
oI
1.0 1.0 3.0 5.0 7.0 \0
2-555
2N3634 thru 2N3637 (continued)
1\ \
0
1\ 1\ 0
7. 0 \.
ill)
0
0
\ 2N3635,2N363:;
II
\ ./
...... ~ 1I
0
\ 0
i-
iI
f\ 1\
0
2N3634, 2N3636 \. \ 2N~35, 2N3637 II
1\ l/
0
1\
i\ 0
/
2N3634, 2N3636
.0
O. 7 l- +-- I-
O. 5
1\ 5.0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
200
oI\,
I \
150
~I -
2N3635, 2N3637
:1\r\ f\.. \
\
0
;'\ 1\
0
1\
L--H-I-I- .0 I'
J..- .....
2N3634, 2N3636 I\, ,
I.-- .0
2N3634, 2N~3~ NN3635,2N3637
0 .0·
1'\ )'\.
50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 S.O 7.0 10
o.7
.0
7.0 10
2-556
2N3634 thru 2N3637 (continued)
o.8
V +0. 5 l,c to -55'CI-
VBE';.:!l-- ~~
~
I-"" 125'C to 125'CI
Ove for VeE! ... )
/ 125'C.to -WCI
J
0.2 VeEI ••t)
-1.5 / ' ~"IH'I J5'C to 125'CI
f.--"
o
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
-2.0 V
o 50 100 150 200
Ie;. COLLECTOR CURRENT lmAl Ie, COLLECTOR CURRENT lmAl
FIGURE 14 - TURN·ON TIME VARIATIONS WITH VOLTAGE FIGURE 1 5 - TURN·OFF TIME VARmTiONS WITH CIRCUIT GAIN
1000 500o '\
CURVES APPL VTO ALL DEVICE TYPES Vee ~ 100V
700 EXCEPT WHERE INDICATED TJ ~ 25'C
300o
'\
500 p, 10 - r--c '\
'\. '\.
~ t, Vee -IOOV TJli~51'f - tfl 2000
'\
300 1'\
200 i\. i'
Vee
'"""{
~ 10V
I III I, V
2N3636·37
'\
1000
p,
~1
'\ 20
.. 100
I' 700 r-. ,..,.
.s
w 70 N3634-35 ~ 500
,'\. ......
:E
~ '\
1'111 ~-
;:::
.... 50
'\. "- 300
'\
30
I\.. p, ~ 10,\ l"'f' ~ 20 ..... ~
""
200
20
2N3647 (SILICON)
2N3648
For Specifications, See 2N3510 Data.
2-557
2N3712 (SILICON)
CASE 31
CTO-5)
Collector connected to case
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 150 Vdc
2-558
2N3712 (continued)
ON CHARACTERISTICS
DC Current Gain (1) hFE -
(Ic = 10 mAdc, VCE = 10 Vde) 25 -
(IC = 30 mAde, VCE = 10 Vdc) 30 150
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(IC = 30 mAdc, VCE = 10 Vde, f = 20 MHz) 40 240
111 Pulse Test: Pulse Width ~ 300 /J.S, Duty Cycle ~ 2.0%.
2-559
2N3713 thru 2N3716 (SILICON)
MAXIMUM RATINGS
~
1 m'
'\ .\
K\\ '\ \
OClo5m,
-" ~ '\
\. ~\ j
\ 1\ ] <56", -
!5
~ ~ ~\ \ Ims ~
0 \~
I
LO
07 \\l - "-
_\. ~
2 0.5
~~~
0.3 '\.\\
~
0.2
O. 1
10 20 30 40 50 60 70 0 10 20 30 40 50 60 70 80 90
VeE, COLLECTOR-EMITIER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate Ie - VCF. limits cant change in these safe areas.) To insure operation below
below which the device will not go into secondary break- the maximum T,,, the power-temperature derating curve
down. Collector load lines for specific circuits must rail must be observed for both steady state and pulse power
within the applicable Safe Area to avoid causing a collector- conditions.
emitter short. (Duty cycle of the excursions make no signifi-
2-560
2N3713 thru 2N3716 (continued)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Types Symbol Min Max Unit
mAde
Emitter-Base Cutoff Current
(vEB = 7 Vde)
lEBO
- 5.0
mAde
Collector-Emitter Cutoff Current Ie EX
(VCE = 80 Vde, VBE = -1.5 Vde)
(VCE = 100 Vde, VB!!.'" -1.5 Vde)
2N3713,
2N3714,
2N3715
2N3716
-- 1.0
1.0
(VCE = 60 Vde, VBE = -1.5 Vde, TC - 150OC)
(VCE =60 Vde, VBE = -1.5 Vde, TC = 150°C)
2N3713,
2N3714,
2N3715
2N3716
-- 10
10
1.0 II , II
\.
'~
---- -40"C-
- - 175"C
II I 1\ ~ 1'-. SEE NOTE 2
\ I I t- r-I-
0.8
\
I
I I
Ic-SA f---
I I
0.6
\ rt~ 1.._ ....... ..... -
" \ ~ I)
"-
--
-
~ 0.4
~ -- ~
..........
\
~<- I - -- -
I ric ]A
0.2 ,
-- - - Ic IA
o
10 20 30 50 70 100 200 300 500 700 1000 2000
I,. BASE CURRENT (mAl
BASE·EMITTER SATURATION VOLTAGE VARIATIONS
1.4
; 1.2
- - - -- - -- Ic SA f---
~ 1.0 - -- -- - --- -- - - - Ie ]A
i j
0.4
SEE NOTE 2 f---
! 0.2
o
10 20 30 50 70 100 200 300 500 700 1000 2000
I,. BASE CURRENT (mAl
2-561
2N3713 thru 2N3716 (continued)
COLLECTOR CURRENT versus BASE CURRENT
10 10
7.0 7.0
5.0 r- 2N3713. 2M3714
II 5.0 c-- 2M3711.2N3716
3.0 ./ 3.0
2.0 2.0
A~ ~7
l 1.0 i 1.0
as'"
~
0.7
0.5
0.3
! 0.7
0.5
0.3
~ 0.2 ~ 0.2 l.flV
Irdi
f;l u
TJ~
J ~ l75°C' VeE - 2V VeE - 2V
8
:::I
0.1 'J SEE NOTES 1. 2 ~
.!J 0.1
SEE NOTES I. 2
.!J 25°C
0.07 0.07 25°C
0.05 40°C 0.05
40°C
0.03 I 0.03
V i
0.02
0.01
I " I
0.02
0.01 ~' 1/
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
~Cl
25°C :/ !400 C
30 / /1 /
1/ '/.'
~
20
TJ = lWC/
". 25/ '-40°C
10 II 1 11
7.0 I II
5.0
3.0
( !
2.0
1.0
a
1
0.4
:0.8 1.2 1.6
I I 0.4 0.8 1.2 1.6 2.0
NOTE 1. Dotted line indicates metered base current plus the leBO of the transistor at 17.5°C •
NOTE 2. Pulse test: pulse width = 200 IJ,S, duty cycle = 1.,5%
TYPICAL SWITCHING TIMES
1.5
+11 5V'
---liIoI
::Lrfj
I.-t .-30 s
I'" ~
TEST CIRCUIT
Ic =5A,J 1, =IIJ=O.5A
f = 150 cps DUTY CYCLE = 2%
WAVESHAPE
ATPOINTA +30V
1.0
0.7
- ~
-9V ........
I.- -.1.-- ~
3- 0.5 :'
t... 4.8 : 13 ........ '. ,"
--"---
_1.7ms ms :E
;:::
k--
loon 20n
900n
'"z t:- '- -I- ~~
;;; 0.3
IW IW ~
~
0.2
loan
IB'T I 82
0.1
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0
Ie, COLLECTOR CURRENT (AMP)
2-562
2N3713 thru 2N3716 (continued)
b--::: -- - - ....-
__25"C
r-- -
........... .
~
h _Ie-ICBO
FE-I.+lc.o
Ve. 2V
~
-- - -I-
4O"C
..........
"'"I'-"'-....."
"'-
."'-r-
"~
.........
----
TJ~IWC
Ie-leBO
hFE = - -
z
1j
150
50
t-"
- I-- f..-- -~"C
I
-..... ~
- r--- ~ :::::::: :::::::
o I ~
.01 .02 .03 .05 .07 OJ 0.2 0.3 0.5 O} LO 2.0 3.0 5.0 7.0 10
Ie. COLLECTOR CURRENT lAMP I
-- t-- r-
~ ........
.......
r--............
~
Ve. ~ 6V ~
o
OJ 0.2 0.3 0.5 O} LO 2.0 3.0 5.0
Ie. COLLECTOR CURRENT IAMPI
2-563
2N3719 (SILICON)
2N3720
MAXIMUM RATINGS
,r""'"--.. ~ 0 "
lI..
3.0
,,,"~ ~ms
• 5001" '"
\
\ \ ......... 5001'5 " ' I\.
\ \
\
'"
5ms
iL 1.0 \ \
~
...i5
..,'"::0'"
0.7
0.5 ... '- , \ ... ... ......
0.3
~ p. @ Te=25~
..
~
\
, ........ '"-.'-. \.
\ 1\
\ \
\
" ~ --
'"
0 P.@Te =25OC ....
~..,
0
0.1
I', ---
~ .\\ " ~
~ 1
\
.9
.07
.05
.03
~ f-- p. @ T. = 25°C ....
BVcoo @ Ie = 20mA -
- ~
---."'
...
I p. @I T'=j50 C - - -- 1---
BVCIO @l e =20mA:--1"""
'III.:
......
.01
o 10 20 30 40 0 10 20 30 40 SO 60
VCI. COUECTOR-EMmER VOLTAGE (VOLTS)
2N3719 and 2N3720 (continued)
III Pulse Test: Pulse Width ~ 300 p,s, Duty Cycle $ 2.0%.
2-565
2N3719, 2N3720 (continued)
1.4
~
0
Z,
~
'"~ 1.2
------- ... ----
-- - t::;.;: -~
~
z:
0
~ 1.0
-- -- --
r-'
Ie _I A
,~ ....-:::: le= 3 A
- -
~ Ie =0.3 A .... ---
'" 0.8
1=
- - - ,...-I- - - - -
:iii
--
I"-
....
~
- 0.6
-- 40·C
.j
j -- 2S·C
--I ISO·C
0.4
10 20 40 60 80 100 200 400 600 700
I•• BASE CURRENT (mA)
~
~
~
1.4
1.2 \ ,
I
1\
,
~ \ \ \
~ \
~ 1.0
\\ \
, \
\
1\ ---40·C-
- 25·C
i 0.8 \ \ -- 150·C._
~
, \1 I~,
\ \
I
~ 0.6
\ \ \',~ \
.~
:iii
~ 0.4 ... ""-
"- r- -1- '-
; 0.2
o
'" ~
----
~ io-..
-- --
-- Ie- 0.3 A
- -- Ie I ~
lel=~ ~
I
I 4 8 10 20 40 60 80 lao 200 400 600 800 1000
I •• BASE CURRENT (mA)
120
z
100
150'C
-
- -r--. ~ Vel = 2 V
- ----~ '-....
2S·C
~ 80
~
Ii! r- r--.
'"::><.>
60
J
~"
...............
- ---
-40'C
40 .....
20 ~
0.1 0.2 0.4 0.6 0.8 2
I", COLLECTOR CURRENT (AMP)
2-566
2N3719, 2N3720 (continued)
100 10
60 6
40 4
20 / / / i'$ 2 A ~
C
.5 10
Vea = 2 V
/ VI i'"' 0.61
Vea = 2 V V/ ./
.... 6
t! 4 50.4
'"u'~"' 2 / I II !t; O. 2 1. L
...c 1500 e I 25 0 e/ -40 oe ~
so. 1
l5ooe/ 25 oe/ 1-40 e
o
~ u
0.6 .2 .06
0.4 .04
J..
0.2 .02 -'-
0.1
0.2 0.4 0.6 0.8 1.2
.0 1
0.2
11 1 1.4
1.0 0.4 0.6 0.8 1.0 1.2
VR. BASE.£MITTER VOlTAGE (VOLTS) v•. BASE.£MITTER VOLTAGE (VOLTS)
2-567
2N3726 (SILICON)
2N3727
Pin Connections.
BOHom View
MAXIMUM RATINGS
Rating
~:~~~OIA~
Svmbol Value Unit
Collector-Emitter Voltage VCEO 45 Vdc
31[
0.305 DIA 0.165
Collector-Base Voltage VCB 45 Vdc 1f.:rnI if.TS5"
Base Current
IC
IB
300
100
mAde
mAde
~ if.i!l9
0.500
MIN
One Both
Pin 1. Collector 1
Side Sides 2. Bass 1
Total Device Dissipation@TA = 2SoC Po 400 500 mW 3. Emitter 1
mW/oC 5. Emitter 2
Derate above 25°C 2.29 2.86 6. Base2
Total Device Dissipation @ T C = 25°C 7, Collector2
Po 0.B5 1.4 Watt
Derate above 25°C 4.B5 B.O mW/oC
CASE 654·04
·'ndicates JEDEC Registered Data
2N3726, 2N3727 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(lC: 0.01 mAde, VCE : 5.0 Vde) 80 -
(lC: 0.1 mAde, VeE: 5.0 Vde) 120 -
(Ie: 1.0 mAde, VCE: 5.0 Vde) 135 350
(Ie: 50 niAde, VCE: 5.0 Vde) (1) 115 -
Collector-Emitter Saturation Voltage (1) veE (sat) - 0.25 Vde
(IC: 50 mAde,IB: 2.5 mAde)
Base-Emitter Saturation Voltage (1) VBE(sat) - 1.0 Vde
(Ie: 50 mAde, I B : 2.5 mAde 1
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2) fT MHz
(lC: 1.0 mAde, VCE: 10 Vde, f: 20 MHz) 60 -
(lC: 50 mAde, VCE: 20 Vde, f: 100 MHz) 200 600
MATCHING CHARACTERISTICS
DC Current Gain Ratio (3) hFE1/hFE2 0.9 1.0 -
(lC: 0.1 mAde to 1.0 mAde, VCE : 5.0 Vde)
Base-Emitter Voltage Differential [VBE 1-V BE2[ mVde
(lC: 0.1 mAde to 1.0 mAde, VCE: 5.0 Vde) 2N3726 - 5.0
2N3727 - 2.5
2-569
2N3733 (SILICON)
CASE 36
(TO·60)
stud isolated from case
Operating and Storage Junction Temperature Range T J,T stg -65 to +200 °c
2-
STUB
TUNER
3-
STUB
TUNER
Zs = 500
7.8-17 pF
7.8-17 pF
2-570
2N3733 (continued)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage 11) BVCEO Vdc
(IC = 0 to 200 mAdc, IB = 0) 40 - -
Collector-Emitter Breakdown Voltage 11) BVCEV Vdc
(IC = 0 to 200 mAdc, VEB(off) = 1. 5 Vdc) 65 - -
Collector-Base Breakdown Voltage BVCBO Vdc
(I C = O. 5 mAdc, IE = 0) 65 - -
Emitter-Base Breakdown Voltage BVEBO Vdc
(IE = 0.25 mAdc, IC = 0) 4.0 - -
Collector Cutoff Current I CEO mAdc
(VCE = 30 Vdc, IB = 0) - - 0.25
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, IB = 100 mAdc)
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(I C = 150 mAdc, VCE = 28 Vdc, f = 100 MHz) - 400 -
Output Capacitance Cob pF
(VCB = 30 Vdc, IE = 0) - - 20
2-571
2N3734 (SILICON)
2N3735
2N3736
2N3737
CASE 26 CASE 79
(TO-46) (TO-39)
2N3736 2N3734
2N3737 2N3735
Collector connected to case
TO-39 TO-46
2N3734 2N3736
2N3735 2N3737
Total Device Dissipation @ T A = 25°C PD 1.0 0.5 watt
Derating Factor Above 25°C 5.71 2.86 mW/oC
2-572
2N3734, 2N3735, 2N3736, 2N3737 (continued)
ELECTRICAL CHARACTERISTICS ITA = 25°C unless otherwise noted)
ON CHARACTERISTICS
- -
DC Current Gain III hFE
(Ie = 10 mAdc, VCE = 1 Vde) 35
(Ie = 150 mAde, VCE = 1 Vdc) 40 -
(Ie = 500 mAde, VCI1 = 1 Vde)
(Ie = 1 Ade, VCE = .5 Vdc) 2N3734, 2N3736
35
30
-
120
2N3735, 2N3737 20 80
--
(Ie = 1.5 Ade, VCE = 5 Vde) 2N3734, 2N3736 30
2N3735, 2N3737 20
Storage Time
(VCC = 30 V,Ie = 1 Amp,
ts - 30 ns
IBl = -IB2 = 100 mAl
Fall Time tr - 30 ns
2-573
2N3734, 2N3735, 2N3736, 2N3737 (continued)
II -lve'~IJ
-- -- -
200
I I
TJ ~ l75°C
-- -- --t- --
-r- -- - -- Ve,~ lOY
-- -- - -
r:;::.::- ~ r-- - ~~ -
150
~ --
-- -- --1--1- I- :--
.......
r-
§ 100
~ -- TJ 100°C -
-- - --
I-" -1--: I- --:;.0.. p.- c----., ~
~ ..:s
1 70
!--
-
fw-"
- --
TJ ~ 25°C
- T -- 55°C -- - r- - - ~
50
30
-- ::;::;::- ~
r--~~
1.0 2.0 5.0 10 20 50 100 200 500 1000
Ie, COLLECTOR CURRENT ImAl
~
CO>
;"'.
0.6
. . . r--- ,I
Ic-IA _ t---
2N3734, estimate abase current 0,,) to insure saturation at a temperature of
25"C and a collector current of 500 rnA.
ffi
~
1\ I Observe that at Ie = 500 rnA an overdrive factor of at least 2.0 is required
~
oC 0.4
1\ "- "'- 500mi
to drive the transistor well into the saturation region. From Figure I, it is seen
that hFE @ I volt is typically 54 Iguaranteed limits from the Table of Char·
S' acteristics can be used for "worst·case" design). .'.
\'
~
8 0.2
. . r-::: r-- 150 rnA
54
I" = 18.5 mA typ
rJ
:>
2~---
500 mA/l"
lOrnA
I
f30/ f3" OVERDRIVE FACTOR
---
_ TJ~25°C I II +1.5
1.0
2 I I IJCTOJ5 0 C
~loooC
-
.1 I
VIE I"') Ie/I, ~ 10 +1.0 I.---"'"
IJvc fOR Ve'(H'1
i!!
g
0.8 .J.-..t" ""'1--- G ~~t:::= ~25°C
~
I-" ~ +0.5
V,,@Ve,=IV
~
i:!: O:ti § ~-
5!
~ 0.4
~
i -0.5
25°CTOIWC
-1.0
f-'i-""'" 9v. fOR VIE
0.2 -I~ 55°C TO 25°C
f-'" Ve'(H'1 (ell, ~ 10
-1.5
10 20 30 50 100 200
j II
300
I I II
500 1000
-2.0 l2:r 100 200 300 400 500 600 700 800 900 1000
Ie, COllECTOR CURRENT (mAl le,COLlECTOR CURRENT ImAl
2-574
2N3734, 2N3735, 2N3736, 2N3737 (continued)
400 I I I
I
5.0
300 / I
I
I I
~ 200
II I I 2.0
/ J I
is ~ I I
Il1
G 100
TJ ~ 175°C
is
Il1 1.0
TJ~IW / 25°C I -55°C
~
25°C B
~ 70 55°C
i
~ 0.5
~ I I
50
40
1/ I
I
30 0.2
20
/
I 0.1
10 I 0.05
0.2 0.4 0.6 0.8 1.0 1.2 o 0.2 0.4 0.6 0.8 1.0 1.2
VIE, BASE-EMITTER VOLTAGE (VOLTS) VIE, BASE-EMITIER VOLTAGE (VOLTS)
,IWC
- TJ ~ 175°C
,/
.". I 10> 1/
10'
l'J'100°C
~ II I
; 10
TJ 100°C
I
~ 1.0
V
10-1
)
TJ 25°C 10- 1 TJ '2S"C
~ I- REVERSE- ~FORWARD t+
10-'
t - I- I I- I I 10-'
0.2 0.1 0.1 0.2 0.3 0.4 0.5 10> I1J4 I()I 1()6 10'
VIE, BASE-EM)TTER VOLTAGE (VOLTS) RIE, EXTERNAL BASE·EMITIER RESISTANCE (OHMS)
2-575
2N3734, 2N3735, 2N3736, 2N3737 (continued)
SWITCHING CHARACTERISTICS
_TJ=25·C -- TJ= 150·C
70 ."'\. "" ~
70
."1.
~
Vee
lell.-IO
30V
lell.- IO
\1'\. ~ 50 ~
50
1'\ ~ ~~ If
30
\\ 1'\
30 '"
....r.
\1,\ '" 1"""- I.
I Vee -30V ~
i;::: 20 I\.\. ""'- ~ 20 ~ I
...... ~
\1\ \
'\. 1.1""
;:::
-c=:r. If
./' Vee -lOY
~
10 Id 10
VOl
Voo-2V
'\.
AI'"
,
10 20 50 lOll 200 500 1000 10 20 50 lOll 200 500 1000
Ie. COllECTOR CURRENT (rnA) Ie. COLLECTOR CURRENT ImAl
50
.... - ,..1-"
1e1l.-2O 'Ii
"'::l~_...
50
" "
~ ~,
-
~
:g 30
I I
! 30
I\. \:
! . .1- -I. ':
,;., "
w
I
t;
20
/'
.,.,..~ I
Ieli. -10
I
i!!
::l
i:f
~
20 r- le/l. -10
['\\ ......
'\ ~ r-.::
_""
.: I-'
,/' 1---' ....
........ ......... ~I-'
10 10
lOOn
+nn~
V,. Vin
loon
I, IN916
V11I - --- - 0 10 < I, < 500 uS
-2Y I, < Sns
-=- 1.>11"
DUTY CYCLE - 2%
2-576
2N3734, 2N3735, 2N3736, 2N3737 (continued)
i
<.)
d 0.7
/
/0..-
I
0.5 10 ~
/' ~ / ~
0.1 3.0
10 20 50 100 200 500 1000· 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
Ie. COlLECTOR CURRENT ImA) REVERSE BIAS IVOLTS)
'" "-
" ......... ' .......
100 p.S
.......
SOILs
-.....
.......
~
'"
:$
ffigg
0.5
0.3 ~ ,Cr--.. ~
1ms
r---..... .......
-............
t--
.......
t---.
-............
f"-....
............. ,......... ..........
13
0.2 .......
r-- ~
--. 1"---..
t---..
.........
~
---- -----
......
I 0.1 r---- .............
j}
I- The Safe Operating Area Curves indicate le·VeE limits
~ below which the de\/ic~s. win not go into secondary break-
.05
r-
down. As the safe operatmg areas shown are independent of
temperature and duty cycle, these curves can be used as
= -
.03 I- long as thermal IMax rating table) is also taken _
re~stance I-- 2N3734 2N3736
into consideration to insure operation below the maximum 2N3735 2N3737
.02 f- junction temperature .
I I I
.01
o 10 20 30 40 50
2-577
2N3738 (SILICON)
2N3739
~
High-voltage NPN silicon power transistors, de-
signed for use in line operated equipment such as audio
CASE 80 ~ output amplifiers; low-current, high-voltage converters;
(TO-66) and AC line relays, featuring excellent dc gain.
Collector connected to case
Thermal Resistance
°JC 7.5 °C/W
20
~
~
16 " ............
..............
.........
z 12 ~
0
>= ..............
~
~ 8 ..............
is .............
f5 ..............
~ 4 .........
~
....Q ..............
o
o 25 50 75 100 125 150 175
Tc. CASE TEMPERATURE (DC)
2-578
2N3738, 2N3739 (continued)
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
ON CHARACTERISTICS
DC Current Gain (1) hFE -
(IC = 50 mAde, VCE = 10 Vde) 30 -
(IC = 100 mAdc, VCE = 10 Vde) 40 200
(IC = 250 mAdc, VCE = 10 Vde) 25 -
Collector-Emttter Saturation Voltage (1) VCE(sat) Vdc
(IC = 250 mAdc, IB = 25 mAde) - 2.5
Base- Emitter Voltage (1) VBE Vde
(Ic = 100 mAde, VCE = 10 Vde) - 1.0
TRANSIENT CHARACTERISTICS
Current-Gain -Bandwidth Product fT MHz
(IC = 100 mAde, VCE = 10 Vde, f = 1. 0 MHz) 10 -
Common Base Output Capacitance Cob pF
(VCB = 100 Vde, IC = 0, f = 100 kHZ) - 20
Small Signal Current Gain
(IC = 100 mAde, VCE = 20 Vde, f = 1 kHz)
hfe
35 -
-
(1)PULSE TEST: PW ~ 300 IJ.S, Duty Cycle ~ 2%
ACTIVE REGION SAFE AREAS
3.0
2.0 r\. r\. ~ ........
2N}738
"'{.... 10",
The Safe Operating Area Curves indicate
~ "- AND 50", r-.... le·Ve, limits below which the device will not
i'.. -t--I--
I"
"
2N3739 go into secondary breakdown. Collector
1.0
.
Ii: 0.5
500", 2N3739==
ONLY -
load lines for specific circuits must fall
within the applicable Safe Area to avoid
causing a collector·emitter short. (Case
s t-.. 1 m, temperature and duty cycle of the excur·
~ 0.3 "-
..........
r-..
t-.. 5m, ~
.........
- sions make no significant change in these
safe areas.) The load line may exceed the
B
-
0.2
........ r--.... B.VeEo voltage limit only if the collector cur·
~
I
rent has been reduced to 20 mA or less be·
0.1 t---... r- fore or at the BVeEolimit; then and only then
may the load line be extended to the abso·
lute maximum voltage rating oi BVelO. To
..Q 0.05 insure operation below the maximum T"
0.Q3
0.02
0.01
40 80 120 160 200
r--..
r-
240
- 280 300
the power-temperature derating curve must
be observed for both steady state and pulse
power.conditions.
2-579
2N3738, 2N3739 (continued)
CURRENT GAIN
300
I I
200 .. - VeE lOV r--
I TJ --1175'~ --r-
I-- - VeE 2V r--
z: 100
TJ
.1
+lOO'C
-- -- t- ---~
- -. -... ---- --
--
--
~
;1 70 '",-
.
-
50 L--' +25'C I
i""' TJ .- :-- .:-.. .;-,
~ --- - - ---- D: ~ -'l.. -- ,
- '--
30
J i"""" ~~ ~
20 f- TJ ~
~
I ......
-5~'C
i-"" to- \ 1\'"'
10 ~ ~ ~"
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500
Ie. COLLECTOR CURRENT ImAI
~ / ~
;;;
70
~ 50
~ 0.4 / / ~ C,.
V 1/ <3
30
r-
J-- VeE(ut) lell, ~ 10
0.2
.... lell,
- ....
1-1-
5
V TJ ~
I I I
+25'C I- 20
I'
r-
I I 10
10 20 30 50 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
Ie. COLLECTOR CURRENT ImAI REVERSE BIAS VOLTAGE (VOLTSI
10 10
5.0 lell, 10 le/ l• 10
~
1.0
0.5
-Vee ·100 V
I
2.0 i'-.
'" ."- ,
!
-"
0.2
0.1
~
'">=
1.0
0.5
" . If
~ Vee ~ 100V
0.05
l'f~ ~
0.02 r-- 0.2 Vee ~ 300V
- (TY~E 2N3739 ONLYI I II
0.01 0.1
1.0 2.0 5.0 10 20 50 100 200 500 1.0 2.0 5.0 10 20 50 100 200500
Ie. COLLECTOR CURRENT (mAl Ie. COLLECTOR CURRENT IrnAI
2-580
2N3738, 2N3739 (continued)
TRANSCONDUCTANCE TRANSCONDUCTANCE
500 10
I / / I
iL - VeE ~ 200V IL
f--- VeE ~ IOV
I / / I I V II II
200
~
t- TJ~+IWc
/ / I I ./
1.0
TJ~+IWc ...../ J I
100 I 1
/ I
~ 50 f--- r- TJ +IOO°c
f-I..
«
s 0.1 1. 1
I I
I
+ 100°C
I I II 7 TJ
TJ ~ +25°c II I I
~
~
20
rr----r-- I I ~::i
1
8
~ 10 I r7 I 0
'-'
2
O.oJ
TJ ~ +25°c
......-
TJ ~ -55°C
I I
I I 0.001
0.2
I
I
I
II
0.4
I
I
0.6
II
II
0.8
0.0001
0.6
- 0.4
REVERSE B)AS
0.2
FORWARD BIAS
0.2
t-
10 10
VeE ~ 200V
5.0
I
I
I I
I IiT
J ~ +175°C
.... +-
2.0 / I I II 1.0
I I
TJ I~ +l75°c__
1.0
V II
~ 0.1
~ 0.5 - - TJ ~ + 100°C ffi
ffi ~
TJ +lOO°c
~ I rt--. .J I I B
~
~
0.2
0.1
c--- TJ ~ +25°c
I
-L
/
II
II
7r-~
I
I
It--~
I
I~
0.01
TJ 55°C ::
TJ +WC
0.05
0.001
I I I
0.02 I II I
I I' I I
0.01 I I I 0.0001
0.2 0.4 0.6 0.8 1.0 10 102 10' 10< 10' 1()6 10'
VIE, BASE-EMIITER VOLTAGE (VOLTS) R.., BASE·EMIITER RESISTANCE (OHMS)
2-581
2N3740, A(SILICON)
2N3741, A
POWER TRANSISTORS
MEDIUM-POWER PNP TRANSISTORS
PNPSILICON
60-80 VOLTS
25 WATTS
· .. ideal for use as drivers, switches and direct replacement of
germanium medium·power devices. These devices feature:
*MAXIMUM RATINGS
2N3740 2N3741
Rating Symbol Unit
2N3740A 2N3741A
0.250
Vdc
~:;~ OIA 0.340
Collector-Emitter Voltage VeEO 60 80
Emitter-Base Voltage VE8 7.0 7.0 Vdc
80 vdc /~
Collector-Base \f.oltage VeB 60
Collector Current - Continuous Ie 4.0 Adc ""!
- Peak INote 1) 10 0.050
0.075
Base Current 18 2.0 Adc 0.360
Total Device Dissipation@Tc=250C Po 25 Watts ~~l: OIA MIN
Derate above 2SoC 0.143 Wloe
Operating and Stor~ge Junction TJ.Tstg -65 to +200 °e
Temperature Range
~ I'-...
~
~
~
~
0
...........
........ CASE 80
o
o 50 Ion 125 150 175
~200 (TO·66)
TC ,TEMPERATURE 1°C)
Safe Area Curves are indicated by Figura 2.
Both limits are applicable and must be observed.
2-582
2N3740,A, 2N3741,A (continued)
*ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage <D 2 VCEO(sus) <D Vde
(lC = 100 mAde, IB = 0) 2N3740, 2N3740A SO -
2N3741,2N3741A BO -
Emitter Base Cutoff Current - lEBO
(VEB = 7.0 Vde) 2N3740,2N3741 - 0.5 mAde
2N3740A,2N3741A 100 nAde
Collector Cutoff Current 5,SCi) ICEX
(VCE = SO Vde, VBE(off) = 1.5 Vde) 2N3740 - 100 ",Ade
2N3740A - 100 nAde
(VCE = 80 Vde, VBE(off) = 1.5 Vde) 2N3741 - 100 ",Ade
2N3741A - 100 nAde
(VCE =40 Vde, VBE(off) = 1.5 Vde, TC = 1500 C) 2N3740 - 1.0 mAde
2N3740A - 0.5
(VCE = SO Vde, VBE(off) = 1.5 Vde, TC = 1500 C) 2N3741 - 1.0 mAde
2N3741A - 0.5
Colleetor-E mitter Cutoff Current 5,SCi) ICEO
(VCE = 40 Vde, IB = 0) 2N3740 - 1.0 mAde
2N3740A - 1.0 ",Ade
(VCE = SO Vde, IB = 0) 2N3741 - 1.0 mAde
2N3741A - 1.0 ",Ade
Collector Base Cutoff Current - ICBO
(VCB = SO Vde, IE = 0) 2N3740 - 100 ",Ade
2N3740A - 100 nAde
(VCB = 80 Vde, IE = 0) 2N3741 - 100 ",Ade
2N3741A - 100 nAde
ON CHARACTERISTICS
OC Current Gain 7 hFEQ) -
(lC = 100 mAde, VCE = 1.0 Vde) 40 -
(lC = 250 mAde, VCE = 1.0 Vde) 30 100
(lC = 500 mAde, VCE = 1.0 Vde) 20 -
(lC = 1.0 Ade, VCE = 1.0 Vde) 10 -
Colleetor-E mitter Saturation Voltage 8,9,10 VCE(sat)Q) - 0.5 Vde
(lC = 1.0 Ade, IB = 125 mAde)
Base-Emitter Voltage 3,4,9,10 VBEG) - 1.0 Vde
I (lC = 250 mAde, VCE = 1.0 Vdc)
TRANSIENT CHARACTERISTICS
Current-Gain-Bandwidth Product - fr MHz
(lC = 100 mAde, VCE = 10 Vdc, f = 1.0 MHz) 4.0 -
• Indicates JEDEC Registered Data. <D Pulse Test: Pulse Width 05: 300 /ls, Duty Cycle 05:2.0%.
® Figures 5 and 6 apply to 2N3740 and 2N3741 only.
10
7.0 100 1"
5.0
0:: 1.0m
~ 3.0
§ 2.0
5.0m. The Safe Operating Area Curves indicate IC - VCE limits below
5
1.0
de " "['\ \
which the device will not enter secondary breakdown. Collector
10ad lines for specific circuits must fall within the applicable Safe
~
::l
0.7
r= TJ 200°C
Area to avoid causing a catastrophic failure. To insure operation
below the -maximum T J, power-temperature derating must be ob-
8
.9
0.5
r== F SECONDARY BREAKOOWN LIMITATION
THERMAL LIMITATION .1,,1,I" 1_
served for both steady state and pulse power conditions.
0.3
~ rBASE·EMITTER DISSIPATION IS _ LIMIT FOR:
0.2
0.1
1.0
I--
I--
SIGNIFICANT ABOVE le~2.0AMP)
PULSE DUITY
2.0 3.0
C~CL;ll~%r
5.0 7.0 10
2i37
20
n
2N3740.A
30 50 70 100
VeE, COLLECTOR·EMITTER VOLTAGE (VOLTS)
2-583
2N3740,A, 2N374~,A (continued)
;
LARGE SIGNAL C~ARACTERISTICS "OFF" REGION CHARACTERISTICS
1000 ;
10
70o f= VCE= 1.0 V 5. o f= VCE BVCEO - 20
500
/ TJ = -55'C IT
:;; 300
'/ ~ 2.0
I
.s 200 ~ 1. 0
~
i TJ 17S'C
ia 100
/ I 1.:-
2d,c - t-- O. 5
g 70
== ;::::IOO'C ~ O. 2
100'C ./
~ 50 8 O. I
8 30 Ji 0.05
25'C ~ r==
Ji
20-- f--175'C : f-- I- REVERSE FORWARD
I 0.0 2
10 ,/ f I 0.0 I
o 0.2 0.4 :
0.6 0.8 1.0 1.2 0.2 0.1 0.1 0.2 0.3 0.4 0.5 0.6
V", BASE-Err"TTER VOLTAGE (VOLTS) V", BASE·EMITTER VOLTAGE (VOLTS)
,
20
- VCE 1.0 V
~
2.0 f--
1.0
V~E ='40V
1/ --
i
: / /
~ 10 TJ -55'C
~ 5.0
-
0.5
TJ 175'C
~ I .... 25'C -
'" 2.0 ~ 0.2
i
~
1.0 100'C ~8 0.1
I
0.5 lOO'C
Ji 0.05
0.2 25'C
175'C 0.02
0.1
0.05 0.0 I 100
o 0.2 0.4 I 0.6 0.8 1.0 1.2 1.0k 10k lOOk
V", BASE'E~ITTER VOLTAGE (VOLTS) R", EXTERNAL BASE·EMITTER RESISTANCE (OHMSI
0.03
O. I
SINGLE PULSE HUL
1:!i7."-J
PULSE TRAIN SHOWN
READ TIME At t I
- --
+25°C
§'" 70
r-- ~
~
-- -
-55°e -.........:~
50
~ ~
'"
'-'
'-'
Q ~ ~~
1
30
I"-. ..... :::"'-
r-.... r-..: ~I::"
20
--:::::
10
10 20 30 50 100 200 300 500 1000
Ic, COLLECTOR CURRENT (mA)
1. 0
I.S
~ 6
TJ ~ +25°C
§:
~ 1.4
§; 1. 2
Eli Ic ~ 100mA 250mA SOOmA 1000 mA
~
I :S
1.0
6 \
Ji8 0.4
\ \
0.2
\
I'..
\. \..
o
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
I" BASE CURRENT 1m,\)
55°e to +25°C
V,,@VCE 2.0V 0
@ 0. 6 To compu~e saturation voltages:
~ V. I"" @ operatiogTJ ~ LI,," @+25°C+ Bv_ (operating TJ -2S0C)
w 5 Us. appropriate Ov for voltage of interest. ,----
~ 0. 4 . Use appropriate curve for temperature range of interest.
'bf-'~- -
§:
I ISnt!+175
o. 2
0
O.oI 0.02 0.03
VCEh.'J @ Icll, ~ 10
I
0.05 0.07 0.1
-
0.2
~~
2-585
2N3740,A, 2N3741,A (continued)
~ I~ 200
!'-..r-....,
1.0
~ ~I'I, r--
- Vee~24V
..:, Cob
"r--,
'1'0.'
0.7
I'
........
0.5
-......; ....
..... :::::1-- - 1--
0
.., ~e - 6OV. Vob - 2.0V
:&
~ 0.3 "-
I'\.
0.2
~ t.." 0
"\
" 'I'. C'b
O. I
0.0 7
0.05
-
"r--,
Vee ~ 24V. Vob~ 0
........
.......... ......
50 ~
"',"', ~
~
30
10 20 30 50 70 100 200 300 500 700 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50
Ie. COLLECTOR CURRENT (mAl V.. REVERSE VOLTAGE IVOLTS)
~"
2.0
r- .... \,
\.
~ l? I':::t< blell. ~20
0
IcJ.l.~lb,L: ~ R~ ~~
0
"
le/l.~I~ ~'r, i"-
\
"
7
7 " "I' f'.
,
O.5
0.3
O.5 "
...., I" t-....r--
......
MAXIMUM RATINGS
VCE~ lOV\
\ 1\
~ C.b
5 5.0
.<5
3.0 \
2.0
i'-r--..
1
1.0 10
0.1 0.2 0.3 0.5 23510203050 lOll 1 5 7 10 20 30 50
REV£RSI: BIAS IVOLTSI I. EMlnER.cURRENT (mAl
2-587
2N3742 (continued)
DC Current Gain ••
(IC = 3 mAdc, V CE " 10 Vde)
hFE *.
10 - -
(Ie = 10 mAde, V CE " 10 Vde)
(Ie = 30 mAde, VCE = 10 Vde)
15
20
-
200
(Ie " 50 mAdc, VCE = 20 Vde) 20 -
Collector Cutoff CUrrent I'Ade
(VCB = 200 Vdc, IE " 0)
ICBO
- 0.2
(VCB = 200 Vdc, IE = 0, TA = lOOoC) - 20
2-588
2N3742 (continued)
~ r-
50 l- f- f-I-- r..... Ve.- IOV
40
""'- ~r--
~
L--- r--
~~ I-- f -
j--
G
TJ - -55'C j-- l- t-
f-i-- - ,
,:
IS
12
10
I
- l--- !-----"
...... 1--:"": f -
10 20
!
30 50
- --
""-t--
---r--....
40
I"'"' T- ~E 5V
12 I\.
10 ~
I 10 20 30 50
is
r--- I-- lell, ~ 10 1 §
~ 0.76 f---Ie/I, - 10
I L i
IL
I i 0.72
'V
./
,/
;;;
L ~ 0.68
V
V
;.. 0.64
~
... V
./ .! V
.; ,
0.60
10 20 30 50 5 7 10 20 30 50
Ie. COLLECTOR CURRENT (mAde) Ie. COLLECTOR CURRENT (mAde)
2-589
2N3742 (continued)
I.5
10
Imlt-.I
....... i-"" IIi! : Re.(y~1
5~H'
g
Ii I--'"
I
5
l
i-'
./ I .....
i 0.5
t---- VeE 10Vdc
1kHz
0.3 0.02 Im,YNI
l/V .01
0.2
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10.0 0.1 0.2 0.5 1.0 2.0 5.0 10
I. EMInER CURRE/fT (mAdel IE. EMITTER CURRE/fT (mAdcl
/1'\
VeE-IOVde
,kH. V 5 MBZ j V
\V
Rtly.,J~V
V V 5M~ "
/ 2 /I V
l·kHz
Imly,.1
I );(Y:J"..... ./
O.5 .".. V
~ .....V"
V ~. 2r-'""
f-"'"
2 O. I -~
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
~
3GO
2GO
100
t-
......
II
I~I
I
TJ -25"C
I I
T" - 25"C
/'
/"" .... \.
\
I
-
Vca - 20V
i"'-
I 70 ~~ VeE-IOV
I 50
~ \
30
20 - "'1'-... ~
Iff \
-n-
10
L/
10 7
IV 1\
G.I 0.2 0.5 1.0 2.0 5.0 10 20 50 100 I 5 7 10 20 30 50
R£'IERSE BIAS MIlTS) I. EMITTER CURRENT InIAl
2-591
2N3743 (continued)
Output Admittance
(VCE = 10 v. Ie '" 10 mA, f = 1 kHz)
hoe
- 200
"mhos
2-592
2N3743 (continued)
--
I ..........
z
50 TJ ~5°C b...
~ "\
! 30
g
~
20
-
TJ 55°C
'""-
- -......
~
10
~
1 1.2 1.5 10 12 15 20 30 50
i!!i
<3
50
10
1 1.2 1.5 10 12 15 20
\ 30 50
2.0
/'
i'"~
,/
V
V
./
~
~
0.60
, 1.0 ~ ].
;:
V
$
0.56
10 20 30 50 1 10 20 30 50
2-593
2N3743 (continued)
Ig
10
7.0
514Hz ~
1
~
100
50 .I
-'
Rely..)
:i!
5.0 RelYi~ !:: 20
fi! i!l
E ..... 1--'
:; 10
I 2.0
~ ~ 5.0
~
!!;
,..,
.f
1.0
0.7
10-
Relyio)
1./
! 2.0
1.0
VeE = 10Vd,
0.5 ~ 0.5
V 1kHz
r- V~ = lOrd. I
0.2
0.2 I-- - I kHz Re Iy,.)
0.1 r-- -
1m I!},.) l
0.1 I/r .05
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
200
Rely,,!
\kHy "... I 100
~
50
VeE = 10Vd.
- VeE I V 5 MHz
/' )' I 20
,/ ~ 10
i5
V
~,; ..!
1/ / ImlylJ 5 MHz
Rely.,) ........... ,;'
...... V 1kHz
,..- f-"'"
/.
,.... 1-1-'
2
0.1
'"..... i"
0.2 D.5 1.0 2.0 5.0 10
0.5
0.1 0.2 D.5 1.0 2.0 5.0 10
2-594
2N3 762 (SILICON)
2N3763
2N3763 JAN, JTX AVAI LABLE
2N3764
2N3765
2N3765 JAN,JTXAVAILABLE
CASE 31 CASE 26
(TO-S) (TO-46)
2N3762 2N3764
2N3763 2N3765
Collector connected to case
MAXIMUM RATINGS (TA=25 0 Cunlessotherwisenoted)
TO-5 TO-46
2N3762 2N3764
2N3763 2N3765
2-595
2N3762, 2N3763, 2N3764, 2N3765 (continued)
--
(VCE = 30 Vdc, VES = 2 Vde) 2N3763, 2N3765 0.10
(VCE = 30 Vde, VES; 2 Vde, TA = lOOOC) 10
ON CHARACTERISTICS
-- -
DC Current Gain 111 hYE
(Ie = 10 mAdc, VCE = 1 Vde) 35
(Ie = 150 mAde, VCE ~ 1 Vdc) 40
(Ie = 500 mAdc, VCE = 1 Vde)
(Ie = 1 Adc, VCE = 1.5 Vde) 2N3762,2N3764
35
30
-
120
2N3763, 2N3765 20 80
(Ie = 1.5 Ade, VCE = 5 Vde) 2N3762, 2N3764
2N3763, 2N3765
30
20
--
Collector Saturation Voltage" 1 VCE(sat) Vdc
(Ie = 10 mAde, IS =1 mAdc) - 0.1
(Ie = 150 mAde, IS = 15 mAde)
(Ie = 500 mAdc, IS = 50 mAde)
-- 0.22
0.5
(Ie = 1 Adc, IS = 100 mAdc) - 0.9
--
(Ic = 150 mAde, IS = 15 mAdc) 1.0
(IC = 500 mAdc, IS = 50 mAde) 1.2
(IC = 1 Adc, IS = 100 mAde) 0.9 1.4
TRANSIENT CHARACTERISTICS
Output Capacitance Cob pF
(VCS = 10 Vdc, IE = 0, f = 100 kHz) - 15
Input Capacitance C ib pF
(VBg= 0.5 Vde, Ie = 0, f = 100 kHz) - 80
Delay Time
(VCC =30V, VSE(Off) =2 V,
~ - 8.0 ns
Storage Time
(VCC = 30 V, ~ = 1 Amp,
ts - 80 ns
Fall Time
IB1 = -IS2 = 1 0 mA)
tr - 35 ns
2-596
2N3762, 2N3763, 2N3764, 2N3765 (continued)
"ON" CONDITION CHARACTERISTICS
DC CURRENT GAIN
300
I I I
.- II - Ve,=IV
200
- --
.- .- ::-:::=: ::- .... -.- .-
TJ = 175'C ~-
1'""--
- -.. - - Ve, = 10V
t---
- - '-'-
150
- -...;;,:
z 1--
~ E;:
.-
"~.
$
-
TJ=I~~_
-
~- J.- r-
- - .-
f-. t--
El 100 1-- '- I- ~ ~
~
- - --
I--
- ".....
i 70 ~-
50
~-
--- ~
r--
-
I-' -", I-
TJ = 25'C
~- ~
r--
- I--
..........
....... 1"-
~
~ l-
~- ~
30 1-;:::'" :::.:::r.::-
,....-
I-- i-
ry-r
1.0 2.0 5.0 10 20 50 100 200 500 1000
I~, COLLECTOR CURRENT (mAl
COLLECTOR SATURATION REGION
1.0
I
in TJ = 25'C
::. 0.8 This graph shows the effect of base current on collector current. {3o (cur·
~
~ 1\ I rent gain at the edge of saturation) is the current gain of the transistor at 1
volt, and {3F (forced gain) is the ratio of lellBF in a circuit. EXAMPLE: For type
'"~
g 0.6 1 " r--.. . le-~A 2N3734, estimate a base current (lB~ to ensure saturation at a temperature of
25'C and a collector of 500 rnA. .
0.2
~ -1.5
..& r-::::.- r- " -55'CTO 25'C
Ii.!
10 20 30 50 100 200
Iclll-IO
I I I I
300 500 1000
-2.0 t:
o
~
+
,,>
I, < IOns
II£S
OUTY CYCLE ,,; 2%
SCOPE SCOPE
2-597
2N3762, 2N3763, 2N3764, 2N3765 (continued)
TRANSCONDUCTANCE TRANSCONDUCTANCE
1000 102
200 I 100°C
l ~
!5
I I I !5 10
i,...-'
/ /
ill
B I I I ~
100
I
.P
70
50 r--'-- TJ ~ 175°
I
.p 1.0
J
25°C -
40 100°C
-
, 25°C
30 55°C
I 4- REVERSE FORWARD
10-1
20 I
I
10
0.2 0.4
I 0.6
I
0.8 1.0 1.2
10-2
0.2 0.1 0.1 02
./
3.0 I I ~eE.~30V
102
2.0 / II
V
1.0 I / I
l 0.5
~B
0.3
0.2 I
i~
- TJ ~ 175°C I I I
0.1
ftoo-cf
WC
I ~.
-1- 550C
0.05
0.03 I II 10- 1
0.02
I I i,~
0.01 I .I I 10-2
0.2 0.4 0.6 0.8 1.0 1.2 101 10< 10' 106 107 100
VIE. BASE-EMITTER VOLTAGE IVOLTSI RIE, EXTERNAl. BASE·EMITTER RESISTANCE lohms)
2-598
2N3762, 2N3763, 2N3764, 2N3765 (continued)
30
20 I - - f-- Id "
'\.
'\.
~ Vcc~
10V
30
20
~~
" .....1'..
.... -
i"-.. t,
V.. ~O ..... fr'~
:'\- I
10
I-- r-V.b~2V
1 1
'\.
~ 10
rr Ilfl
10 50 100 200 500 1000 10 20 30 50 100 200 300 500 1000
Ie. COLLECTOR CURRENT (mA) Ie- COLLECTOR CURRENT (mAl
100
.'1
\ Icll, ~20 '- -
Icll, -10
""-.
-~ t-....
~
100
~ r, "- l', Ie/I, ~ 20
Vee ~ lOV
!
~
"-
-~
, "- "", .......
~
r'\.
~
50
" r- -
t?
:oJ 30
t\
'\
30
Icll,~ 10 i' ""
......... p:-- :....,
r---. -
20
10
20
10
t'--..
. . . r--..
-
10 20 30 50 100 200 300 500 1000 10 20 30 50 100 200 300 500 1000
Ie. COLLECTOR CURRENT (mA) Ie. COLLECTOR CURRENT (mA)
2-599
2N3762, 2N3763, 2N3764, 2N3765 (continued)
10
==
-
-
f::-TJ~+25'C
I I Vce -30VI
lell, ~ 10
50
- I--
............ Cibo
II UI 1
IT;~1~25,L l -
/ ~
/' 30
~.
Y -r-.
....... QT §.
"
~
20
G .- lE
~
........
". lL"" ~ .....
<3 r- Cobo
"V .IV 10
r-.....
r.....
O}
/
/ / 7.0
0.5 QA
./
5.0
0.3
0.2 3.0
10 20 30 50 100 200 300 500 1000 0.1 0.2 0,5 1.0 2.0 5.0 10 20 50
Ie, COLLECTOR CURRENT, (mA) REVERSE BIAS (VOLTS)
2,0 f\ \ \. "--..........
\ \... \...
1.0 \ ~
'" .............. 50 fl.,ec
,.~
5
0.5
"
'" '-......
........
...........
~sec
'" ......... 100 fl.sec
..............
--.........
........
'" .......
- '"r--..... -r---
--- --r--
0.3
.......
15 ~
~ 0.2
............. ....... DC
"-. I---.....
.............. ...............
! 0.1
...............
r-.. r---
--
..Y
.02 _
temperature and duty cycle, these curves can lJe used as long
as the thermal resistance (max rating table) is also taken into
consideration to insure operation below the maximum 2N3762 2N3764
-
junction temperature. I I 2N3763 2N3765 -
.01
r-- I I I I I
10 20 30 40 50 60
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
2-600
2N3766 (SILICON)
2N3767
Peak 4.0
Base Current IB 2.0 Adc
20 ...............
en ............
~
<: 16
~ ...............
z: ........
0 ['.....
~ 12
0...
en ~
en
C 8 ~
.....
<>::: ..............
~
0
0...
IS
4 -......... .....
0... r-......
0 ~
o 25 50 75 100 125 150 175
Te. CASE TEMPERATURE (Oel
Safe area curves are indicated. Both limits are applicable and must be observed.
2-601
2N3766, 2N3767 (continued)
ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted)
Characteristic Symbol IMin I Max Unit
OFF CHARACTERISTICS
Collector-Emitter Voltage 111 BVCEO Vdc
--
(IC: 100 mAdc, IB : 0) 2N3766 60
2N3767 80
Emitter-Base Cutoff Current lEBO mAdc
(V EB = 6 Vdc) - 0.75
Collector Cutoff Current ICEX mAdc
(VCE: 80 Vdc, VBE: 1.5 Vdc) 2N3766 - 0.1
(V CE = 100 Vdc, VBE : 1.5 Vdc) 2N3767 - 0.1
(VCE = 50 Vdc, VBE : 1.5 Vdc, TC : 150°C) 2N3766 - 1.0
(VCE: 70 Vdc, V BE : 1.5 Vdc, TC : 150°C) 2N3767 - 1.0
Collector-Emitter Cutoff Current ICEO mAdc
(VCE: 60 Vdc, IB : 0) 2N3766 - 0.7
(VCE: 80 Vdc, IB: 0) 2N3767 - 0.7
Collector-Base Cutoff Current mAdc
leBO
(VCB: 80 Vdc, IE: 0) 2N3766 - 0.1
(V CB : 100 Vdc, IE: 0) 2N3767 - 0.1
ON CHARACTERISTICS
DC Current Gain hFE -
(IC : 50 mAdc, V CE : 5 Vdc) 30 -
(IC : 500 mAdc, VCE : 5 Vdc) 40 160
(IC : 1.0 Adc, V CE : 10 Vdc) 20 -
Collector-Emitter S4turation Voltage VCE(sat) Vdc
(IC : 1 Adc, IB : 0.1 Adc) - 2.5
(IC : 500 mAdc, IB : 50 mAdc) - 1.0
Base-Emitter Voltage VBE Vdc
(IC : 1.0 Adc, VCE : 10 Vdc) - 1.5
TRANSIENT CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(IC : 500 mAdc, VCE : 10 Vdc, f : 10 MHz) 10 -
Common-Base Output Capacitance Cob pF
(VCE: 10 Vdc, Ie : OAdc,f: 100 kHz) - 50
Small-Signal Current Gain hre -
(Ie : 100.mAdc, VCE = 10 Vdc, f = 1 kHz) 40 -
111 Pulse Test:Pulse Width~300ILs,Duty Cycle~2.0%
4.0 ACTIVE REGION SAFE AREAS
r\. ...... "1.." ........
1 SOJLS
2N3 7;;-'
"- ~
500 JLS
2.0
"" .....
AND
2N3767
..........
I
The Safe Operating Area Curves indicate
" '"""-
t-...
i'...
1m, '>-
N-
2N3767 ==
Ic·Ye< limits below which the device will not
go into secondary breakdown. Collector
load lines for specific circuits must fall
within the applicable Safe Area to avoid
causing a collector·emitter short. (Case
5m' ONlY _
1"""0. ::.... temperature and duty cycle of the excur·
)0.., .....,., sions make no significant change in these
safe areas.) The load lin.e may exceed the
DC
i""- --- BYaovoltage limit only if the collector cur·
i'- rent has been reduced to 20 rnA or less be-
fore or at the BYc" limit; then and only then
0.1
'" .........
may the load line be extended to the abso·
lute maximum voltage rating of BYCIO. To
insure operation below the maximum TJ •
the power-temperature derating curve must
be observed for both steady state and pulse
0.06 power conditions.
0.04
10 20 30 40 50 60 70 80
VeE. COLLECTOR EMInER VOLTAGE IVOLTSI
2-602
2N3766, 2N3767 (continued)
TRANSCONDUCTANCE TRANSCONDUCTANCE
1000 10
I I
700 I _l I
- VCE~5V
/ / I - - VCE~40V
SOO
If
I I
I
/ I
/
300 I I 1.0
200
TJ ~ +JWC -'r/ I I - TJ ~ +J75'C
./
IL
I
1 I I I '"
.§
/
ffi
~
~
100
TJLI~'C
-- ;
~
0.10
II
f-- ~ TJ
~
III +JOO'C /
~
.9
70
TJ I +2~'C ~
.9
so
~I---
30 0.01
- tJzsol
TJ = -55'C -
20
I--- REVERSE BIAS FORWARD BIAS --<
J
V
10 0.001
./
0.2 0.4 0.6 0.8 1.0 1.2 0.6 0.4 0.2 0.2 0.4 0.6
VIE, BASE-EMITTER VOLTAGE (VOLTS) VIE, BASE.fMITIER VOlTAGElVOlTS)
II II V
10
TJ ~ +175lC I
7.0 1.0
5.0 II
TJ ~ +175'C I ./
I I ....... i 1 V
1 3.0
ffi
!!l'-' 2.0 I / ffi
~ J
r- I-- TJ ~ +loo'C I I I 0.10 TJ ~ +loo'C
~
~ 1.0
0.7
I I -- rf.. V I
I
.9
I-- TJ ~ +25'C 1-
0.5 r- ....... I TJ ~ -55'C 0.01
0.3 I t-I
0.2 I
I TJ ~ +25'C
0.1 I II I 0.001
II I I II i-'"
0.2 0.4 0.6 0.8 1.0 1.2 1()2 10' 1()4 lOS 1()6
V... BASE-EMIITER VOLTAGE (VOLTS) ROE, BASE-EMITIER RESISTANCE (OHMS)
2-603
2N3766, 2N3767 (continued)
CURRENT GAIN
300 I I I I
--VCE=SV f-
200
-
TJ = +17S"C
TJ = +100"C
- - --- 1-. .• t---
~ ..
-""":.. t-"; ~=--
VCE-2V
f-
-
z 100
i TJ=+25"C
t5
~
i
50
'55"C
, ~
"
TJ
~
", ",
30
20
10
~
\
,
10 20 30 50 70 100 200 300 500 700 1000
Ic. COLLECTOR CURRENT !mAl
2.0
'"
~
~
'.
Ie = lOOnIA Ie = 500nIA
.""" Ic=lA
~
I,S ......
;:!:
~
85
!:
; 1,0
" ......
..... +25OC
-
TJ
~.
>
U·
O.S .......
1.2 I I I I 8,0
- TJ - +2S"C
T. COI1fIIIe saluralion voltages
~"'I @operatlncTJ=V,I"'1
I I II
1.0 6,0 +25DC+ ""Ioperating TJ -' 2S"C1 I I
U", appropriate ", for voltage of interest, ! ,I I,
lL
-
Uj"anrij Te Idr ~m~,,,a:ure{a,e ~ i i i
~
;
0.8 ~ r- VIE''''I @Ic/l,= 10
I I
P
:i
4.0 TJ = +25!CID +17S C I.J..-
D
i""n.+"
'""" '"
0.6 V.. @V",,=2V i 2,0 9vc 1", VCll"'l
~ II I I
..
TJ= 55OCID+25OC
!i
. 0.4 II
VCEI"'I@Ic/I,=:10 ~
I - "'-1 I
~ ""I... V"
TJ = +25"C ID +17S"C
l-
r-
0,2
'.t I I I I t..I -o.z .... TJ = .,..55"C ID +25"C I-
,II .J,!o' r" I I I I I I
-4,0 I I
10 20 30 50 100 200 300 500 1000 100 200 300 400 500 600 700 800 900 1000
Ie. COlI.£CTOR CURRENT ImA) Ie. COLLECTOR CURRENT ImA)
2-604
2N3766, 2N3767 (continued)
TRANSIENT CHARACTERISTICS
(TJ = 25°C)
TURN·ON TIME TURN·OFF TIME
5000 I I I I
1000
,,'-, lell, = 10
3000 I" I"
~~ -Vee ~ 30V, VOl' ~ OV
500
1:\ 2000
~ ..........
-- Vee = 80 V, VOl = 2 V
300
I'\.
:\
I'~
I,
TYPE 2N3767
"
I.
I
~
1\
"
1',=1,- Mot,
200
~ 1000
\ \. ,
Id , .s
..
~
w
>=
100
..... r ....
w
~
500 I'\.
Vee ~ 80 ViTYPE 2N3767 ONLY)
"-
". 300
I' 1\ III
I" I' III
50
]\ II, •
200
r, Vee = 30V
I(l
30 "
r-- l"-
20 "' K.
"'~
100
I'-. ~"
10
10 20 30 50 100 200 300
"...
500 1000
50
10 20 30 50 100 200 300 500 1000
Ie, COLLECTOR CURRENT (mAl Ie, COLLECTOR CURRENT (mAl
200
1'-"
C'b APPROX.J111V,.
t--f', V,. _____ --0
..... I- 1'1'1 VOl
'VOI = BASE-EMmER "OfF" BIAS VOLTAGE
....
EQUIVALENT CIRCUIT FOR
MEASURING STORAGE AND FALL TIMES
70
"'" APPROX
+l1V
~ c...
50
V,.
1\
APPROX,
-9V
30
0,10,2 0.5 1.0 2,0 5.0 10 20 50 100 100 < 1,.< 500 piS
I, < IS ..
REVERSE BIAS (VOLTSl DUTY CYCLE - 2%
2-605
2N3771 (SILICON)
2N3772
MJ3771
M.J3772
· . . designed for use in power amplifier and switching circuits NPN SILICON
applications.
40-60 VOLTS
150 WATTS
• High DC Current Gain -
hFE = 15 (Min) @ IC = 15 Adc - 2N3771, MJ3771
15 (Min) @ IC = 10 Adc - 2N3772. MJ3772
*MAXIMUM RATINGS
2N3771 2N3772
Rating Symbol Unit
MJ3771 MJ3772
ra~
VeEX
Collector-Base Voltage Ves 50 100 Vdc
Emitter-Base Voltage VES 5.0 7.0 Vdc
1111'550MA~
Collector Current ~ Continuous Ie 30 20 Adc
Peak 30 30
Base Current - Continuous IS 7.5 5.0 Adc
t
0.83
~~tl ~t~
Total Device Dissipation@TC=250C PD 150 Watts
Derate above 2SoC 0.86 w/oe 0.135
MAX 1 _
9.:.~ I'
Thermal Resistance, Junction to Case
0.225
BASE
CASE 11
TO~3
2-606
2N3771, 2N3772, MJ3771, MJ3772 (continued)
ON CHARACTERISTICS
'DC Current Gain (Note 1) hFE -
(lC = 15 Ade, VCE = 4.0 Vde) 2N3771, MJ3771 15 - 60
(lC = 10 Ade, VCE = 4.0 Vde) 2N3772, MJ3772 15 - 60
(lC = 30 Ade, VCE = 4.0 Vde) 2N3771, MJ3771 5.0 - -
(lC = 20 Ade, VCE = 4.0 Vde) 2N3772, MJ3772 5.0 - -
'Coliector·Emitter Saturation Voltage (Note 1) VCE(setl Vde
(lC = 15 Ade,IB = 1-5 Ade) 2N3771 - - 2.0
MJ3771 - - 1.0
(lC = 10 Ade,IB = 1.0 Ade) 2N3772 .,.. - 1.4
MJ3772 - - 1.0
(lC = 30 Ade, IB = 6.0 Ade) 2N3771 , MJ3771 - - 4.0
(lC = 20 Ade, IB = 4.0 Ade) 2N3772, MJ3772 - - 4.0
Base·Emitter Saturation Voltage (Note 1) VBE(set) Vde
(lC = 10 Ade,IB = 1.0 Ade) MJ3771 , MJ3772 - - 1.7
(lC = 15 Ade,IB = 1.5 Ade) MJ3771, MJ3772 - - 1.8
(lC = 20 Ade, IB = 2.0 Ade) MJ3771, MJ3772 - - 2.5
'Base·Emitter On Voltage (Note 1) VBE(on) Vde
(lC = 15 Ade, VCE = 4.0 Vde) 2N3771 - - 2.7
MJ3771 - - 1.7
(lC = 10 Ade, VCE = 4.0 Vde) 2N3772 - - 2.2
MJ3772 - - 1.7
DYNAMIC CHARACTERISTICS
Current·Gain-Bandwidth Product for MHz
(lC= 1.0 Ade, VCE =4.0 Vde,f= 50 kHz) 2N3771,2N3772 0.2 - -
(lC= 1.0 Ade, VCE = 10 Vde,f= 1.0 MHz) MJ3771, MJ3772 2.0 - -
Small Signal Current Gain hfe 40 - - -
(lC = 10 Ade, VCE =4.0 Vde,f= 1.0 kHz)
SWITCHING CHARACTERISTICS
Rise Time MJ3771, MJ3772 tr - 350 - n'
(VCC = 10 Vdc,
Storage Time MJ3771, MJ3772 ts - 700 - n.
IC= 10 Adc,
IBI = IB2 = 1.0 Adc) MJ3771, MJ3772
Fall Time tf - 300 - n.
'Indica_ JEDEC Registered D8t8 (2N3771, 2N3772).
Note 1: Pulse Test: Pulse Width S; 300 Jl.S, Duty Cycle S; 2.0%.
2-607
2N3771, 2N3772, MJ3771, MJ3772 (continued)
,, \ 1\ " \. I\, I
'\.I
~
~
\
r-.~t~t\
0
,, ~~~
f\
0
I~ \\"'i>
I-
~
t\ % I\.
~.%\ l\ 0
«.
if
«.\%,
i\, 1\ I'. \
7.0
5. 0
...
10 r\: if I\.
1\ ~
," "1\
'"
:'5 '.
3. 0
·i i
I- I-
ill
II:
II:
7.0 " -,
TJ' 2000 C
~
J = 2ioo
::::> 2.0
1
,\
::::>
'-' ---Secondary Breakdown limited '-' ---Secondary Breakdown limited
~ 5.0 I--- __ -Thermal Limitation Te:: 25 0 C II:
I-- - - - Thermal limitation Te == 250 C 1\
I-
1 1 1 , , I" III '. r\1\ t ICurves
I apply
I 1 11111 \
~ j 1. o below rated VCEO
r\~
belo~ o
8 Cu .... apply rated VCEO '-'
~ ~ O. 7
3.0
~ O. 5
1\
2.0 1\
jN3T f-
0.3
MJ3771-I I
'-
O.2
Mr7j
!N3J72
1.0
i "( O. 1
1.0 2.0 3.0 5.0 7.0 10 20 30 40 60 1.0 2.0 3.0 5.0 7.0 10 20 30 40 60
VCE. COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE. COLLECTOR·EMITTER VOLTAGE (VOLTS)
2-608
2N3783 thru 2N3785
(GERMANIUM)
MAXIMUM RATINGS
2N3783 2N3785
Rating Symbol 2N3784 Unit
Collector-Base Voltage VCS 30 15 Vde
Collector Current 20
Ie mAde
FIGURE 1 - 200 MHz TEST CIRCUIT: POWER GAIN & NOISE FIGURE
SHlno
I
eN 0.7 -9' pF
L·I OUT
0.7-9* PF~"*-fo) ~
2-8pF
470 pF
IN MOTU.
L·I 14 inch inside diameter. \i Incllionath, 4 turns #20 solid COjIper wire, center tapped.
470 f.! 14 inch inside diameter, close wound, 3 turns #26 solid copper wire. 1:1 ratio
bj·filler wound.
* Hiah Quality piston type capacitor.
Distance from emitter contact of trensistor 10 ,ro"': side 01 bypass capacitor
should be kept minimum.
2-l1 pF JO.ODIIlF
+10 -Vee
2-609
2N3783 thru 2N3785 (continued)
Collector Cutoff Current ICBO VCB = 10 Vdc, IE : 0 All Types - - 5.0 ~Ade
Emitter Cutoff CUrrent lEBO VEB = 0.5 Vde, Ie = 0 All Types - - 100 ~Ade
Collector-Emitter VCE(sat) IC = 5.0 mAde, IB : 1.0 mAde 2N3783, 2N3784 - - 0.25 Vde
Saturation Voltage 2N3785 - - 0.35
Base-Emitter VBE(sat) IC: 5.0 mAde, IB = 1.0 mAde 2N3783, 2N3784 - - 0.55 Vde
Saturation Voltage 2N3785 - - 0.65
Small-Signal Forward
Current Transfer Ratio hie IC : 3 mAde, VCE = 10Vde,l: 1 kHz 2N3783, 2N3784 20 - 200 -
2N3785 15 - 200
Current Gain -
Bandwidth Product
IT Ic = 3 mAde. VCE : 10Vde,l: 200 MHz 2N3783
2N3784, 2N3785
800
700
-
-
1600
1600
MHz
Collector-Base r'C
b e VCB :
10 Vde, IE = 3 mAde, I = 31.8 MHz 2N3783, 2N3784 1.0 - 6,0 ps
Time Constant 2N3785 1.0 - 10
RG = 50 ohms
2N3784 - - 2.5
2N3785 - - 2,9
Power Gain (AGe) Note 1 Ge(AGe) VCE = 10 Vde, IC = 15 mAde, I : 200 MHz 2N3783 - - 0 dB
2N3784, 2N3785 - 0 -
Noise Figure NF VCE : 10 Vde, IC : 3 mAde, f = 1000 MHz 2N3783 - - 6.5 dB
-
I-'
i'-.
iJ~55y ...-
-- - _r-
~
."
I-
8 ..-"
/TJ~25°C
~\
- ~ \
O. 4
-1 -2 -3 -4 -5 -7 8 -9 10 20 30
Ie. COLLECTOR CURRENT (mAl
2-610
2N3783 thru 2N3785 (continued)
V
V ;
"
1.5
~,
V
"- ~ ,/
~ "- !
1.0
['\b,. V ...
1\ ~ 0.5
~ .... > ~
-&. I--' ~~
-4.0
so 70 100 200 300 500 700
'"1\1000
~
INPUT ADMmANCE versus COLLECTOR CURRENT REVERSE TRANSFER ADMITTANCE VlrsUS COLLECTOR CURRENT
so 0.75
,J 200 Jz
40 I-- vc.-- IOVdc
V '~200M~Z
t-- YeE=-IOVdc
/'
K Ii
1/" O.SO
- boo
~
I
0
'7 ...........
i
""
~ 0.25
~
0
..........
-I0
~ ~
r-....
-20 0 -2 -4 -6 -8 -10 -12 -14 -16
- -8 -10 12
-&.
14 16
Ie. COlLECTOR CURRfNT !mAl Ie. COllECTOR CURRENT !mAl
INPUT ADMITTANCE versus COLLECTOR CURRENT REVERSE TRANSFER ADMITTANCE VlrsUS COLLECTOR CURRENT
40
,= 1000 MHz 3.0
VCI=-IOVdc
i--k
,=
IIi!
30 2.5
" '-... 1000 MHz
YeE = -IOVdc
boo
2.0
......... ~
~ -.!!:. I
; 1.5
----
.............
~
'-
I""
---
1.0
-10
-2
" -4
r--.....
-6
b,.
10
Ie. COlLECTOR CURRENT !mAl
-12 -14 -16
•
"" 0.5
-2 -4
r--- r--
-6 -8 10
Ie. COLLECTOR CURRENT !mAl
-&.
12 14 16
2-611
2N3783 thru 2N3785 (continued)
10 II
I"
r--., VeE ~ -IOVde
Ie = -3 mAde 1E VeE = -IOYde
le=-3mAdc
V
..s
-'" "'" -
8.0
~ .L
V
0
V~ r.... t-.... I
5
6.0
V
5
-25
50 70 100 200
'"
300
f. FREQUENCY (MH,)
l'-...
.....
SOD
'".!:'-r-
700 1000
2.0
o
50
I"'""
70
~~
100
L
200 300
f. FREQUENCY (MH,)
L.
-f-
SOD
fo-"I-"r"
700 1000
fORWARD TRANSFER ADMITTANCE versus COLLECTOR CURRENT OUTPUT ADMITTANCE versus COLLECTOR CURRENT
90 3.0
1~2oo M~z
I-- ~
f- 1= ~oo MH~
I-- VeE ~ -IOVde YCE=-IOVde
I-"'"
2.
5r- I
"V o ....... "
r--
5
V 5
boo
0
!/ V- i"-- r--... ....... .0
'"
V
~ 15
0
-2 -4 -10
""I/.
0
6
- I--
8 10
Ie. COLLECTOR CURRENT (mAl
~
12 14 16
FORWARD TRANSFER ADMITTANCE versus COLLECTOR CURRENT OUTPUT ADMITTANCE versus COLLECTOR CURRENT
30 15
1,),1000 MHz 1=lloooM~z
r-- VCE = -10 Vde _ Yc.--IOVdc
/
V
/
--... ~
- -boo
/
""'"
"'\
r--.......
r'\.
""-
N
---I::.-
-I/.
I
o
o ~ ~ ~ ~ ~ ~ ~
-~.
I ~
-- - -
-r-- 10 12 14
:-:.Lo
- 16
Ie. COLLECTOR CURRENT (mAl Ie. COLLECTOR CURRENT !mAl
2-612
2N3783 thru 2N3785 (continued)
MAG & MAXIMUM NF versus FREQUENCY NOISE FIGURE versus SOURCE RESISTANCE
50 ]0 4.0
2N3783 2N3783
f= 200 MHz
r--- t- VCE ~ -]0 Vde
Ic ~ -3 mAde 9.0
e-- VCE ~ -]0 Vde
40 8.0
"I'- 3.0
Ie ~ -3 mAde,:-------"
I'
K' MAG~~
4g"og.,
7.0 Ic~-2mAde0
Ic ~ -I mAde "'-
~
y
~ I'-.
-- ~~
30 6.0
~ iii
'" "'- V ;g
~
~
20
TYPICAL GAIN
PER FIGURE I ~ V 4.0
~
~
~
~
li li
)/ 3.0
NF IRg ~ 50QI ...... V r---I'- 1.0
10 2.0
1.0
o o 040 50
50 70 100 200 300 500 700 ]000 70 100 200 300 400 500
,..... 1 1- I :i! ,,
2N3783 i I> r---~J r--- ~ t-~ ~
/ \ =
f 200 MHz
-14
~~ 1lfl
o
~
0
55 ""
20 VCE~-IOVde -
-12
V ..to
"
I\.
\ I I I1/ 150mw",
DISSIPATION
~ 10
'j / ~ II
~
;
..J 0 '"
TUNED AND NEUTRALIZED
'\~ \VV / V; I
'/ /
/, ~
..
""
@ Ic ~ -3mMe
~r
-4
-I 0
2 V
~~ P
2N3783
th,U
0
2"3785
-2 0 10 12 14
-5.0 -10 -IS -20 -2 -4 -6
Ie, COLLECTOR CURRENT ImA) Ie, COLLECTOR CURRENT ImAl
2-613
2N3789 thru 2N3792 (SILICON)
CASEll~.
~
(TO-3)
PNP silicon power transistors for medium-speed
switching and amplifier applications.
to NPN type 2N3713 thru 2N3716.
Complement
2-614
2N3789 thru 2N3792 (continued)
TYPICAL SWITCHING TIMES AND TEST CIRCUIT
1.0
-.... Ums
i
:r-:-1
6.7ms VALUES SHOWN FOR
ic-5A,),,- -1,,-0.5A
~ ..............
+9V f = 150 cps, OIlTY CYCLE = 2%
j.
O. 7
"f\:,I'\.""r-,. . . . . r-.
""- ~
-30 V
61l
4W
w
~
o. 5
;=
ill
"~
[\..1', r'..
'r-. r' ...... ~
.L,.~
O. 3
O.2
0.1
If - -1,,1-leIl1
Vee -30V
Te - 25°C
I
0.2 0.3
I
0.5 0.7 1.0
--;,-
2.0
..... -
3.0
\.
~
r-
5.0
Ie, COLLECTOR CURRENT lAMP)
u; 140
~
.............
120 t--.
~ ..............
z
0 100
~ 80
..............
~ 60
..............
~ ...............
~ 40
,f 20
...............
...............
25 50 75 100 125 150 175 200
Te , CASE TEMPERATURE 1°C)
Safe area curves are indicated. Both limits are applicable and must be observed.
\4 n- 2501's - 2501's -
"\.
Det.Sms i.>.,.\ 1\ \ \
ySO!,'
.~ L"-. ~ "~ ~
t\ 2 <56!'. -
"\ 1\\ DCt.Sm. -'-.. "\ .~
~
1m. k\\ \ \ fI'\. \. 1\ \ \'
!
~
1.0 ~ \V ~.
1m. ~
0 ~\hl
&l 0.7 "\. \.
::::l
8 0.5
Ji """\\.\
0.3 '-..\'
~
0.2
0.1
o 10 20 30 40 50 60 70 10 20 30 40 50 60 70 80 90
VeE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
The Safe Operating Area Curves indicate IC - VCE limits below which the device will not go into secondary
breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid
causing a collector-emitter short. (Duty cycle of the excursion make no significant change in these safe
areas.) To insure operation below the maximum TJ, the power-temperature derating curve must be ob-
served for both steady state and pulse power conditions.
2-615
2N3789 thru 2N3792 (continued)
5.0
, 7.0
5.0
~
3.0
I(
" ""
~
VeE ~ 2 V
3.0
IA~
~ 2.0 ~ 2.0
/ g
ffi
I 1. 0
/1/ ~
CI:: 1.0
~
ir! ~
~ 7 ~ 07
--
0
I .9 o. 5
.§ O.5
I TJ ~ -40°C
O.3 II TJ ~ +25°C
O. 3
o.2
r-
- TJI=+:WCI
O.2
/,
fI-
IJI ~I-iol
TJ :: 't25°C
O. I I O. 1 rJ. !jJllitn
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000
V.., BASE·EMITTER VOlTAGE (VOLTS) I" BASE CURRENT ImA)
* Dashed line indicates metered base current minus leBo of the transistor at 175°C.
~~ 0.6
I'-r-,. r-- le= SA
ili
t=
/ '-r-. I
10
7.0
5.0
II
i
~
0.4
.....
r-- r--
r""'"-
Ic =3A
I
le= IA
0.2
3.0 ...... TJ= -40°C
2.0
'-r- I
TJ = +25°C
I
I Ti=+iw~
1.0 o
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 o 2
V", BASE,EMITTER VOlTAGE IVOLTS) OVERDRIVE FACTOR (/1o//1rJ
2-616
2N3789 thru 2N3792 (continued)
i 2.0
I Ve.~2V
~ 2. 0
V ~
§
B 1. 0 /11 iB 1.0 ~
g g
~ O.
7 ~ o. 7
j} O. 5 .ld 0.5
I -r- TJ ~ -40'C V-
I i--c... TJ ~ +25'C
o. 3 I I I
0.3
f--
I ..... TJ ~ -40'C
o. 2
-r-TJ~+lWC
0.2 .,. -TJ~ +25'C
""'TJ - +17S'C
o. 1 O. 1 11111111 I
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
V", BASE·EMITTER VOLTAGE (VOLTS) I" BASE CURRENT (mAl
Dashed line indicates metered base current minus leBO of the transistor at 175-0.
1/ ./
// /
~
1\
~
100
70
50
~
,.
~ 0.6
'" ......... -., le~SA
i ~ 1\
~
30
20
I,
i 0,4
"- .........
- le=3A
I
-
'- --
-"
10
I I
~ Ie 1A
7.0 ,;:
5.0
TJ ~ -40'C Q.2
3.0 I I
II '--r-.- TJ ~ +25'C
2.0 __ TJ + !75'C
II ~
1.0 '''-1 I I I o
o 0.4 0.8 1.2 1.6 2.0 2.4 2.8 o 2 3
V", BASE·EMITTER VOLTAGE (VOLTS) OVERDRIVE FACTOR (,801 P"
2-617
2N3789 thru 2N3792 (continued)
-
FE= I.+lclo
~ 70 TJ +2SoC i'
i'
ts
:Ii!
50 :::r: - -40°C ~
~ t--...
B
~&
.1 30 -.....;:::
a ~ TJ - +2Soc
~~
10 f'~"
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Ie, COLLECTOR CURRENT IAMPI
--------
- 2N3791, 2N3792
300
200
TJ
TJ
+175°C
+2SoC
- r-- ....... ...... h
.'
YeE-2V
le-lelO
FE= 1.+lclo
..'. I
TJ - -40°C
..... t'-~ I I
a
TJ +2Soc
a
...... ........
a
~
~-+175°C
~~
a ~~
20 ""'r:::~
r"'~
I0
0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
Ie. COLLECTOR CURRENT IAMPI
2.0
~
-
Pi AL~ TYP~S
TJ - +25 C I I I
1
+5.0 ,--,---,---,---.,..--r--,---,---,---,....--,
+4.0
;til 1.6
- p. - le/l, (FORCED GAINI
VeE-2V It
~ L
~ 1.2 ~p. - 10
, ~~
~-'- 0.8 - r--VIElut) L..-
;
;: - ~V.. P. 10 ~
.- .......,.
O.4
- t-- _VCEI ...tl
0
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 - 3.0!:-O--f::----,-f-::---::':-~4.0::-""'S;';.O:---::6.'::-0--f;;---;t;;-----;!-;;--t1·0
Ie. COLLECTOR CURRENT (AMPI Ie. COLLECTOR CURRENT lAMp)
2-618
2N3796 (SILICON)
2N3797
HANDLING PRECAUTIONS:
MOS field-effect transistors have extremely high input resistance. They can be damaged
by the accumulation of excess static charge. Avoid possible damage to the devices while
handling, testing, or in actual operation, by following the procedures outlined below:
1. To evoid the build-up of static charge, the leads of the devices should remain
shorted together with a metal ring except when being tested or used.
2. Avoid unnecessary handling. Pick up devices by the case instead of the leads.
3. Do not insert or remove devices from circuits with the power on because transient
voltages may cause permanent damage to the devices.
2-619
2N3796, 2N3797 (continued)
2-620
2N3796, 2N3797 (continued)
20
/ V
+8
+7
20
/
v V +5.0
::5
I
TA ~ 25'C
18 18
~
IV
I-'"
/I V V
16
~/ V
+6
TA ~ 2S'C
16
Pv ~ I-'" - +4.0
~~
- -
+3.5
~ J ~
14 14
~
~
12
'I'
f
/
- r-
+S
12 Y
1/
V
V - i---
--- +3.0
+2.5
~ / +4
-
10
V ....----
'/ +2~
i.E 1/
/"
- V - +1.5
--
+3
V /- +1.0
+2
+o.s
. / r-' I r
~ +1 VG'~O
'/ V
o 2 8 10 U M U U m n M U 10 12 14 16 18 20
vo,. ORAIN-50URCE VOLTAGE (VOLTS) Vos. DRAIN-SOURCE VOLTAGE (VOLTSI
1111 I 1111 I,
llill I , 1111
vo, ~ 10V I vo, ~ IOV
TA~25'C TA ~ 2S'C II
I
I-'"
I--
-2 -2
f...-~
-3 -3
-4 -4
0.02 0.03 0.05 0.1 0.2 0.3 O.S 1.0 2.0 3.0 5.0 10 20 0.02 0.03 O.OS 0.1 0.2 0.3 O.S 1.0 2.0 3.0 S.O 10 20
10 • DRAIN CURRENT (rnA) 10 • DRAIN CURRENT (mA)
2-621
2N3796, 2N3797 (continued)
5000
..,,-
300
\ L1
2N3797
. / ~rL
I' " 2SO \ \ \
I\.
\
\
r:::
~ 2N3796
./ ~
~ 200
z
\
I ISO
2N3796
\.
,,/
./
/'
./
Vos ~ 10V
,;,
100
VD'~ 10V
,,'""~ I\.
I\r-,
200 TA~2S'C
SO - TA~2S'C
r'-.
100 I'Tn o
,~
,, 1kHz
~
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 1.0 10 20 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20
ID. ORAIN CURRENT (mAl I.. DRAIN CURRENT !mAl
TA~2S'C
'~I kHz /J
12
\
:-..
Vos~
"'
V6'~0
10V
TA~2S'C_
- r--
I-
200
'~I
~
kHz
2N3797 10
l\
.I" 2N3796 -
~ '/ \.
-.,.! V
10 / .\.
I\. .I
5.0 ~ ./
2.0 ./
1.0
V
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30
ID•ORAIN CURRENT (rnA) R,. SOURCE RESISTANCE (meaOOms)
2-622
2N3798, 2N3798A (SILICON)
2N3799,2N3799A
!
*MAXIMUM RATINGS
2N3798 2N3798A
Rating Symbol Unit
2N3799 2N3799A
Collector-Emitter Voltage VCEO 60 90 Vdc
l
. 0.209
Collector-Base Voltage VCB 60 90 Vdc rnor-
Emitter-Base Voltage
CoHector Current - Continuous
VEB
IC
5.0
50
Vdc
mAde
g:\;~ OIAll DlA ~I
Total Device Dissipation @TA ., 25°C Po 0.36 Watt 0.110
4
Derate above 25°C 2.06 W/oC
Total Device Dissipation @lTC =25 0 C Po 1.2 Watts 0
Derate above 250 C 6.9 wJDc
DC 0.500
Operating and Storage Junction TJ.Tstg -65 to +200
Temperature Range ~DlA
Pin 1. Emitter
2. Base
j
THERMAL CHARACTERISTICS 3. Collector
2-623
2N3798, 2N3798A, 2N3799, 2N3799A (continued)
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCEO Vde
(IC" 10 mAde, IB" 01 2N3798,2N3799 60 - --
2N3798A,2N3799A 90 - -
Collector-Base Breakdown Voltage BVCBO Vde
(Ie" 10 MAde, IE = 01 2N3798,2N3799 60 - -
2N3798A,2N3799A 90 - -
Emitter-Base Breakdown Voltage BVEBO 5.0 - - Vde
(IE = 10MAde, IC = 01
Collector Cutoff Current ICBO JLAdc
(VCB = 50 Vde, IE = 01 - - 0.01
(VCB = 50 Vde, IE" 0, TA" 1500 CI .- - 10
Emitter Cutoff Current lEBO - - 20 nAdc
(VBE = 4.0 Vde, IC "01
ON CHARACTERISTICS
DC Current Gain(1) hFE -
2N3799,2N3799A 225 - -
(lC" 100 MAde, VCE = 5.0 Vdel 2N3798,2N3798A 150 - -
2N3799,2N3799A 300 - -
IJC" 100 MAde, VCE = 5.0 Vde, T A" -55 0 CI 2N3798,2N3798A 75 - -
2N3799,2N3799A 150 - -
(IC" 500 MAde, VCE " 5.0 Vdel 2N3798,2N3798A 150 - 450
2N3799,2N3799A 300 - 900
(IC" 1.0 mAde, VCE = 5.0 Vdel 2N3798,2N3798A 150 - -
2N3799,2N3799A 300 - --
(IC = 10 mAde, VeE = 5.0 Vdel 2N3798,2N3798A 125 - -
2N3799,2N3799A 250 .. -
Collector-Emitter Saturation Voltage(1) VCE(,a,1 Vde
(IC" 100 MAde, IB= 10 MAdel - - 0.2
IIc = 1.0 mAde, IS = 100MAdei - - 0.25
Base-Emitter Saturation Voltage(1) VSE(,a,1 Vde
IIc = 100 MAde, IS = 10 MAdel - - 0.7
(lc" 1.0 mAde, IS" 100 MAdel .- .. 0.8
Base-Emitter On Voltage VSE(onl .. .. 0.7 Vde
(IC" 100 MAde, VCE = 5.0 Vdel
I
(IC" 1.0 mAde, VCE = 10Vde, 1= 1.0 kHz I
Noise Figure NF dB
lie = 100 MAde, VeE = 10 Vde, RG = 3.0 k ohmsl,
'~'OO"'. "W~"", 2N3798,2N3798A 4.0 7,0
..
2-624
2N3798, 2N3798A, 2N3799, 2N3799A (continued)
2.0
\
"-
~1"tA
"-
/ :i!
co
'"u:w
00
~
5.0
4.0
3.0
I,,\:
"- '-" r--- /
10 pA
I'N. "'" 2.0
1.0 1.0mA
1.0
o I II o
100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k 100 200 500 loOk 2.0k s.Ok 10k 20k 50k lOOk
4.0 \1\ I
[\.\ /1.0 rnA. 1.0 k!l
~ ,,~
w 3.0
I
'"co ~ ~ 10pA.l0k~1
'"
u: I'\. ~ ~
w 2.0 lbo pA. 3.0 kll
00
<3 ....... r--:: t--... ::::::
z 10pA.l00kll
1.0
i"'--r-.
r-
o
10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 20k 30k 50k 100 k
f. FREQUENCY (Hz)
2-625
2N3798, 2N3798A, 2N3799, 2N3799A (continued)
z TA=125 0 C
;;: 300
to
I-
r-- .... r--
~
a: 25 0 C
=>
'" 200
'"c
~
-55 0 C
100
0.001 0.002 0.005 0.Q1 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (mAde)
1000
200
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
2-626
2N3800 thru 2N3804,A (SILICON)
2N3805,A,2N3806
thru
2N3810,A, 2N3811,A
2N3812 thru 2N3816,A, 2N3817,A
DUAL PNP SI LICON ANNULAR TRANSISTORS
I
One Both
Side Sides 2N3806 thru 2N3810,A
2N3811,A
Total Device Dissipation @ T A = 25°C Po Case
Metal Can 12N3800 thru 2N3804,A 250 360 mW 654-04
2N3805,A
Derate above 25°C 1.43 2.06 mW/oC
Metal Can 12N3806 thru 2N3810,A, 500 600 mW
2N3811,A 2N3812 thru 2N3816,A
Derate above 2So C 2.86 3.43 mW/oC 2N3817,A
Flat Package 12N3812 thru 2N3816,A, 250 250 mW Case 610A-03
2N3817,A
Derate above 2SoC 1.43 2.06 mW/oC
1 ~rl ~OlAt
~
D'195 0.170 '-j
fIN
~OIA r l
IT
0.050 D14D
~
'
MAX _J
O.050lP.
•J., j~~ _______--r.---'-------.::m::·:-'I
-0.D28
All L....sEl.ctricallylSOllledtromCasa
Case e10A-Q3
2-627
2N3800 thru 2N3804,A, 2N3805,A, 2N3806 thru 2N3810,A,2N3811,A,
2N3812 thru 2N3816,A, 2N3817,A (continued)
2-628
2N3800 thru 2N3804,A, 2N3805,A, 2N3806 thru 2N3810,A, 2N3811,A,
2N3812 thru 2N3816,A, 2N3817,A (continued)
r"'
Output Admittance hoe 5.0 SO "mhos
(lC = 1.0 mAde, VCE = 10 Vde, I = 1.0 kHz)
Noise Figure NF dB
(IC = 100 "Ade, VCE = 10 Vde, RG = 3.0 k ohms
",.'W ~,."'
2N3800, 2.4,A,S,8,10.A,12,14,IS,A - 7.0
2N3801,3,5.A,7,9,11,A,13,15,17,A - 4.0
Spot _ _
N .
olse
1- 1.0 kHz, BW - 2.0 kHz 2N3800,2.4,A,6,8,10,A,12,14,IS,A - 3.0
2N380',3,5,A,7,9,1',A,13,15,17 .A - 1.5
1.0
I'N.
1.0 rnA
" ...
3.0
2.0
-"- 10"A
1.0
o 1III o
100 200 500 1.0k 2.0k 5.0k 10k 20k SDk lOOk 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50k lOOk
2-629
2N3800 thru 2N3804,A, 2N3805,A, 2N3806 thru 2N3810,A, 2N3811 ,A,
2N3812thru 2N3816,A, 2N3817,A(continued)
0
z 10 "A, 100 kn
"'I"-
r-.:: I
1.0
r"-_
o
10 20 30 50 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 20k 30k SDk 100 k
f, FREUUENCY (Hz)
vclJLl
z TA"125 0 C
;;' 300
"'>-- r- I"-t--
~ 25 0 C
t--
'"
8 200
u
"
i
-55 0 C
100
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IC, COLLECTOR CURRENT (rnA)
"
'"
~ 300
-55 0 C
200
0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
2-630
2N3818 (SILICON)
The RF Line
15 W -100 MHz
RF POWER
TRANSISTOR
NPN SILICON
NPN SILICON RF POWER TRANSISTOR
• Power Output -
Pout ~ 15 Watts at 100 MHz
• Power Gain -
GPE ~ 7.0 dB (Typ) at 100 MHz with 15 Watts RF Power
Output
Note 1. The maximum ratings as given for de conditions can be exceeded on a pulse To convert inches to millimeters multiply by 25.4
basis. See electrical characteristics.
All JEDEC dimensions an0notes apply
STYLE 1. All leads isolated from case
CASE 36
TO-60
2-631
2N3818 (continued)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(l) VCEO(sus) 40 - - Vde
(lC = 0.25 Ade, IB = 0)
Collector-Emitter Sustaining Voltage( 1) VCES(sus) 80 100 - Vdc
(lC = 0.25 Adc, RBE = 0)
Collector-Emitter Current ICES mAde
(VCE = 60 Vde, VBE = 0) - - 0.5
(VCE = 50 Vde, VBE = 0, TC = 1750 C) - - 1.0
Collector Cutoff Current ICBO - - 1.0 "Ade
(VCB = 50 Vde, IE = 0)
Emitter Cutoff Current lEBO - - 100 "Ade
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain hFE -
(I C = 400 mAde, VCE = 2.0 Vdc) 5.0 - 50
(lc = 1.0 Ade, VCE = 2.0 Vde) 5.0 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.5 Vde
(lc = 1.0 Ade,lB = 250 mAde)
Base-Emitter Saturation Voltage VBE(satl - - 2.0 Vde
(lC = 1.0 Adc, IB = 250 mAde)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product tr 150 - - MHz
(VCE = 2.0 Vdc, IC = 400 mAde, f = 50 MHz)
Output Capacitance Cob - - 40 pF
(VCB = 25 Vde, IE = 0, f = 100 kHz)
FUNCTIONAL TEST
2-632
2N3818 (continued)
25 I00 20 1.0
20 BO it ~
,.
;;:
~« 1\ ~
.... 0.75 ~
....
~ Vcc = 25 V iii ~ iii
a'"'"
'"~ 15 .0 <3 '"
~
~ ....=>~
~
.... r\ '"
....
0
0.50
'"0
~
=> 40 f=100MHz
I': 10 I':
=>
0 Vcc = 15
Vr\ \ ~ =>
0 TC = 25 0C
8
~ 8 ~
0.25
o'? 5.0
\\r\ 20 ~
0..
FIGURE 3 - OUTPUT POWER versus COLLECTOR VOLTAGE FIGURE 4 - OUTPUT POWER versus INPUT POWER
20 20
~ ./ ~
....
....
«
15 « 15
~ V ~
'"~
~
.... 10 V '"~
~
....=> 10
=>
I':
=> /' :==>
0
~ 5.0
o'?
/ Pin = 2.5 W
f=IOOMHz
0
} 5.0
/ TCr50C f=IOOMHz
TC = 25 0C
o /
o 5.0 10 15 20 25 30 1.0 2.0 3.0 4.0 5.0
1 I d. I .F DlSCAP
2.7-30 pF
RS =50 Q t 0r---"'JIk:--~------..,
L1 01---+--1 L3
2.7-30 pF T.U.T.
2-633
2N3821 (SILICON)
2N3822
2N3824
N-CHANNEL
JUNCTION
SILICON N-CHANNEL FIELD-EFFECT
TRANSISTORS
JUNCTION FIELD-EFFECT TRANSISTORS
SYMMETRICAL
(Type A)
.. designed for audio amplifier, chopper and switching applications.
0.209
'MAXIMUM RATINGS 0230 t-
OIA I
Rating Symbol Value Unit QJEDIAl r
0.195 1\1
Drain-Source Voltage VOS 50 Vdc
STYLE 1 ih:;o
Drain-Gate Voltage 50 Vdc PIN 1 SOURCE I
m
VOG 1 DRAIN 1
mW
3
4
GATE
CASE LEAD
1 0,500
MIN
Derate above 25°C
Operating Junction Temperature TJ
2.0
175
mW/oC
°c
~:~i~ DIA
_J
Storage Temperature Range T stg -65 to +200 °c
·Indicates JEDEC Registered Data.
0.100
0.028
0,048
CASE 20
TO-72
2-634
2N3821, 2N3822, 2N3824 (continued)
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage VIBR)GSS -50 - Vde
IIG ~ -1.0 !lAde, VOS ~ 01
Gate Reverse Current IGSS nAdc
IVGS ~ -30 Vdc, VOS ~ D) - -0.1
IVGS ~ -30 Vde, VOS = 0, T A = 150°C) - -100
Gate-Source Cutoff Voltage VGSloff) Vde
liD = 0.5 nAde, VOS = 15 Vdc) 2N3821 - -4.0
2N3822 - -6.0
Gate-Source Voltage VGS Vdc
liD = 50 !lAde, VOS ~ 15 Vde) 2N3821 -0.5 -2.0
liD = 200 !lAde, VOS = 15 Vde) 2N3822 -1.0 -4.0
Drain Cutoff Current 101off) nAde
IVDS ~ 15 Vde, VGS = -8.0 Vde) 2N3824 - 0.1
IVOS = 15 Vde, VGS = -8.0 Vde, TA = 150°C) 2N3824 - 100
ON CHARACTERISTICS
Zero-Gate-Voltage Drain Current( 1)
IVOS = 15 Vde, VGS ~ D) 2N3821
2N3822
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance IVfsl ,umhos
IVOS = 15 Vde, VGS = 0, f = 1.0 kHz)ll) 2N3821 1500 4500
2N3822 3000 6500
IVOS = 15 Vde, VGS ~ 0, f = 100 MHz) 2N3821 1500 -
2N3822 3000 -
2-635
2N3823 (SILICON)
N-CHANNEL
JUNCTION
FIELD-EFFECT
TRANSISTOR
SILICON N-CHANNEL SYMMETRICAL
JUNCTION FIELD-EFFECT TRANSISTOR (Type A)
0178
1 0209
0230
OIA
t-
I
o 195 OIA 1\ n'
MAXIMUM RATINGS STYLE 1 I!..!1.Q
1
PIN 1- SOURCE 0210
Rating Symbol
~~f::EAO
Value Unit 2.
3.
Drain-5ource Voltage VOS 30 Vde 4.
0.028
0.048
CASE 20
TO·72
2-636
2N3823 (continued)
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage VIBR)GSS -30 - Vdc
IIG = -1.0 "Adc, VOS = 0)
Gate Reverse Current IGSS nAdc
IVGS = -20 Vdc, VOS = 0) - -0.5
IVGS = -20 Vdc, VOS = 0, TA = 1500 C) - -500
Gate·Source Cutoff Voltage VGSloff) - -B.O Vdc
110 = 0.5 nAdc, VOS = 15 Vdc)
Gate-Source Voltage VGS -1.0 -7.5 Vdc
110 = 0.4 mAdc, VOS = 15 Vdc)
ON CHARACTERISTICS
Zero-Gate-Voltage Orain Current(l)
IVOS = 15 Vdc, VGS =0)
DYNAMIC CHARACTERISTICS
Forward Transfer Admittance IYfsl "mhos
IVOS = 15 Vdc, VGS = 0, f = 1.0 kHz) (1) 3500 6500
(VOS = 15 Vdc, VGS = 0, f = 200 MHz) 3200 -
Input Conductance Re(Yis) - 800 "mhos
IVOS = 15 Vdc, VGS = 0, f = 200 MHz)
Output Conductance ~mhos
IVOS = 15 Vdc, VGS = 0, f = 1.0 kHz)(l) IYosl - 35
(VOS = 15 Vdc, VGS = 0, f = 200 MHz) Re(yos) - 200
I nput Capacitance Ciss - 6.0 pF
IVOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance Crss - 2.0 pF
IVOS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Common-Source Spot Noise Figure NF - 2.5 dB
(VOS = 15 Vdc, VGS = 0, RS = 1000 ohms, f = 100 MHz)
2-637
2N3838 (SILICON)
1 2 4 5
Case 610-02
NPN PNP
NPN-PNP complementary pair silicon annular
transistor designed for switching and general purpose
amplifier applications.
Pin Connections, Bottom View
2-638
2N3838 (continued)
ON CHARACTERISTICS
DC Current Gain hFE -
(I C = 0.1 mAde, VCE = 10 Vde) 35 -
(IC = 1. 0 mAde, VCE = 10 Vde) 50 -
(IC = 10 mAde, V CE = 10 Vde) IU 75 -
(IC = 150 mAde, VCE = 10 Vde) (11 100 300
(IC = 150 mAde, V q.E = 1. 0 Vde)(11 50 -
Collector-Emitter Saturation Voltage (1) Vde
VCE(sat)
(IC = 150 mAde, IB = 15 mAde) - 0.4
Noise Figure NF dB
(IC = 100 /-LAde, VCE = 10 Vde, RS = 1. 0 k ohm, I = 1. 0 kHz) - 8.0
2-639
2N3866 (SILICON)
2N3866A
CME~
NPN silicon transistor, designed for amplifier, fre-
quency-multiplier, or oscillator applications in mili-
taryand industrial equipment. Suitable for uses as out-
put, driver, or pre-driver stages in VHF and UHF
(TO-39) equipment.
Collector connected to cue
DYNAMIC CHARACTERISTICS
Current-Gain - Bandwidth Product fT MHz
(lC = 50mAdc, VCE = 15 Vdc, f = 200 MHz) 2N3866 500 800 -
2N3866A 800 - -
Output Capacitance Cob - 2.0 3.0 pF
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TEST
Power Gain Test Circuit-Figure 1 G pe 10 - - dB
Power 0 utput Pin = 0.1 W, VCE = 28 Vdc Pout 1.0 - - Watts
f = 400MHz, TC = 25 0 C
Collector Efficiency 11 45 - - %
2-640
2N3866, 2N3866A (continued)
l,
0.9·7
RfC
5.611
FIGURE 2 - POWER OUTPUT versus FREQUENCY FIGURE 4 - PARALLEL INPUT RESISTANCE AND
(Class C) CAPACITANCE versus FREQUENCY (Class C)
2.5,----,--,--,----,---,---,---, 200 50
160 VJ~28V
EMITTER GROUNDED DIRECTLY TO CHASSIS
40
~ C,.~
§ 120
i
11.01-----+-;:;~o4;;:--+-~..._--+-""""'d--1
i 0.91-----+--'--=-+-""""e::---+-""""'d----P-..:-I
.: 0.81-----+--+--+-""'10..---+---+--1
O.7I-----+--+--+---+--""o..l---+--1
40
R'.~
~
'" ~
r-.:
r': ~ 15 WAITS
10 WATT_
10 WATT
10
1.5 WAfS
0.6 \"::100;:----'----;200==--.L-.-3=00;:----;±4OQ;:----:!:50""0----:::600 100 200 300 400 500 600 700 800 0
f, fREQUENCY (MHz! I. fREQUENCY (MHzl
FIGURE 3 - POWER OUTPUT versus POWER INPUT FIGURE 5 - PARALLEL OUTPUT CAPACITANCE
(Class C) versus FREQUENCY (Class C)
J J
2.5 10 .0
2.0 -
..1. f-175MHz ), .~ ,J !.
VeE~28V J
-- ,
EMITTER GROUNDED DIRECTLY TO fHASSIS 8. 0 EMITTER GROUNDED DIRECTLY TO CHASSIS -
i
---
VeE -28V r-
>- 1.5 0
r-
~ ~
! / ~
--
0
1.0
/' .......- 13.5V_
~
~t-
t--
i
... 0.5 /f'
~
..-- 2.0
1.5 WATTS
// / l.i WATT
'IV' 0
00 10 20 30 40 50 60 70 80 90 100 100 200 300 400 500 600 700 800
p,., POWER INPUT (mWI f. fREQUENCY (MHzl
2-641
2N3866, 2N3866A (continued)
"
0 .........
i
8
6
""- ........ ,_Ih"l ..... I'--I---
1 4
---. '"
2"" R.ih!.)
0
2 o
40 60 80 100 200 400 600 800 1000 o 10 IS 20 25 30
f. FREQUENCY (MHzI VCI. COLLECTOR·BASE VOlTAGE IVde)
~
---
6Vde
0
~
F- 3Vdc
0 -,
o
o 20 40 60 80 100
Ic. COLLECTOR CURRENT (mAde)
5
0
~-
.---
VCE= 15Vde
I-"
-
0 --.... VCE - 3Vde
10Yde
15 Vde
0 b
/"
5Vde
5 0
0 0
10 20 30 40 50 20 40 60 80 100
Ic. COLLECTOR CURRENT (mAde) Ic. COLLECTOR CURRENT (mAdel
2-642
2N3866, 2N3866A (continued)
y PARAMETER VARIATIONS
240
10V~ --.!-.
80
VeE!.
VeE~ 15Vde
1= 200 MHz
---- - ; "",. ... -II,.
--
0
~ =
VeE 10Vde -
VeE= 15Vde - - -
.~ 1= 200 MHz
~
- - -- -- - Iii
\
~ .:::- 1--
20
I
,~ - - -- II.
....... ~- f-.
20
--
40
I--
60
Ie. COLLECTOR CURRENT (mAdel
- -
80 -
b;.- r -
100
-80
-120
o 20 40 60
Ie. COLLECTOR CURRENT (mAdel
80
3
......
-- b~
-
~
r-_ r--
1""- 1"""
-I"
, "".- I ..
20 40 60 80 100 20 40 60 80 100
Ie. COLLECTOR CURRENT (mAdel Ie. COLLECTOR CURRENT (mAdel
DESIGN NOTE
Figures 11 through 18 show small-signal admittance-parameter data. This data can be used for
Class A amplifier designs.
For Class C power-amplifier designs, the small-signal parameters are not applicable. Figures 4 and
5 give parallel output capacitance and the parallel input resistance and capacitance for Class C power-
amplifier operation.
The parallel resistive portion of the collector load impedance for a power amplifier, RL', may be
computed by assuming a peak voltage swing equal to Vcc , and using the expression
R' Vce z
L ="'2'P
where P = RF power output. The computed R L' may then be combined with the data in Figures 2 and
3 to comprise complete device impedance data for Class C power amplifier design.
2-643
2N3866, 2N3866A (continued)
Y PARAMETER VARIATIONS
(VeE == 15 Vde, Ie =80 mAde, TA =25°C)
FIGURE 15 - SMALL·SIGNAL INPUT ADMITTANCE FIGURE 17 - SMALL·SIGNAL FORWARD TRANSFER
versus FREQUENCY ADMITTANCE versus FREQUENCY
80 800
0
~
,;. 0,
1-- .........
,./"
" \.
\
1\
r-....
"-
""
0
-II<.
--... .......... r'\ r--.....
,
0
0
"'~ .... ~
b;....... ............
~, 0
~ r-
-20 i'--
fI,
-40
50 70 100 200
f, FREQUENCY (MHz)
300 " 600
-200
50 70 100 200
f, FREQUENCY (MHz)
300 600
I
I 20
l(
V /
/ 1il 16
-/V i~ 12 /
V
/ ~
/ /
V ~
g 8 ./
/ /
/ k[/ .!
Y
V
V
- - /'
--
r-
~ -I-- ~
_I-"
o o
50 70 100 200 300 600 50 70 100 200 300 600
f, FREQUENCY (MHz) f, FREQUENCY (MHz)
2-644
2N3870 thru 2N3873 (SILICON)
2N3896 thru 2N3899
2N6171 thru 2N6174
~
O@
supplies, battery chargers, temperature, motor, light and welder
controls. PIN1G ...n
lCATt10GE
• Economical for a Wide Range of Uses CAS~ ANOOE
*Non.::p:~~~;e2:::9::e~:174
Blocking Voltage
-----+---:-:---+-----+--:-v,-o,-'' ---l PIN 1 GATE
2CATIIOOE
SllJG,ANOOE
(t:5.5.0 ms)
2N3870. 2N3896, 2N6171
2N3871, 2N3897. 2N617:1
2N3872, 2N3898. 2N6173
2N3873, 2N3899, 2N6174
{+85 0 CI
'THERMAL CHARACTERISTICS
Characteristic Unit
2-645
2N3870 thru 2N3873, 2N3896 thru 2N3899, 2N6171 thru 2N6174 (continued)
100 50
!'- Types 2N6171 thru 2N6174 must be derated
an additional 10%. For example, in Figure 1,
de
w ~~ the max Te at 20 A (1800 Conduction) is 700 C.
~ 40
5w- 90
~ ~ ~70C.
derated 33
a derating of 30 0 C. These types must be
0 C; therefore, the allowable Te (max) ...
I-
~'"' ~
",,,,""
"'w
'\ ~ I I '"w
;,:'" 80 ;,: 30
0:::>
i\ ~"'
~f--
.30°_ ~
I"I""'"
~I-
~ ... w
... " ,
:;;w 60°_
r. - ...'"
i~ 70 20
I~" CONDUCTION ANGLE- ~
xl-
...
:;; ,-1200 ......'<'""'de
...>
:;
U 60
~900 ~
" .=
I-
I- 1-,1800
'---t---t--f- CONDUCTION ANGLE
50
o 5.0 10 15 20 25 30 35 40 10 15 20 40
InAV), AVERAGE ON·STATE CURRENT (AMP) InAV), AVERAGE ON·STATE CURRENT (AMP)
2-646
2N3883 (GERMANIUM)
CASE 31
(TO-5)
200
1\, ADJUST VII for +0.5 Vat point A
ADJUST base puI$e for 5 ~ widIb
ADJUST coNectat pulse for duly CJCIe ~ 5"
1\ 80
TO OSCIll.OSCOP£
\ lATCII-UP TEST POWERSUP-PlY
510
-5~
50
\ I\.
t..t.<2O ..
51
o
o 10 15
\ 20 25 30
Veo. COUECTOR.fMITTER VOlTAGE MllTS)
2-647
2N3883 (continued)
Rise Time t
r - 28 40 ns
Storage Time ts - 40 70 ns
Fall Time tf - 28 40 ns
, -
STORAGE TIME VARIATIONS
,"
'T
2.5
II, = 112
lei {Jo« I"
...... 1""
/'
,.,...... V
""
V
/
'I' ,,/
5 ,,/
/
1.0 5 "'"
-10
~
i'--
-20
I•• BASE CURRENT (mAdel
-so
1"11,,. CIRCUIT DtlIV£ RATIO
10
2-648
2N3883 (continued)
-IO.tY _--'W_-.----_
50
L=~loJ
/
/
TJ = 25°C 2000 _ TJ=25°C
50 fJF=5 - ~=IO V
I~IOoo -I.
/
\
\ ~ 700 /'
\ ~ 500 V
/'
'\.. ~
8 LV'
r--. I,and!, ,/' 300
~ .........V ~ .,........, . /
&200
BASE-EMITTER VOLTAGE
COLLECTOR-EMITTER SATURATION VOLTAGES versus BASE CURRENT versus COI:LECTOR CURRENT
-1.0 -0.8
'- T~ =125° J I
~=IO I
-0.8 ji!-0.7 - I,
~ \ TJ = 25°C
~
~
~-O.& \ ~
!:j-O.6 II
g
~ \ \ I
!'S
\ ~ V
~-0.4 "- ...... Ie = -2OOmA r- ~-O. 5
8. ~ r--...
I~ lOOmA- J
:P
-0.2
" r-....
Tiiit
-0.4
-
le=-lOmA
1/
o IIII
-0.1 -0.2 -0.5 0.7 1.0 2.0 -5.0 7.0 10 20 50 30 50 70 100 300
I•• BASE CURRENT ImAll Ie. COllECTOR CURRENT ImAl
2-649
2N3883 (continued)
+2.0 2.0
Ie
I- T = 10 t-- -
1+25'~ TO +l~'C)
f-" T5:
'1 Ve,= -I VOLT f.-
I--'" I---"
8vc for Vet'Nt)
TJ=+25'C f"o;; f-
( 55'1 TO +25'C)
- .....
.......
./
-3.0 0.1 10
-50 -100 -150 -200 -250 -300 20 30 50 70 -100 200 300
Ie. COllECTOR CURRENT (mAl, Ie, COllECTOR CURRENT (111M
300 5
J T.' +85'~
200 L J. ...... :--,
Vet = -15V Clio
10 .......
1 100 I ..........
.....
r--..
I
£l
'/y
TIllESHOlD
-:-- TJ +55'C ~
\'OlTAIlE - ~ r-...
I 50
.1
.... ~ CImIt. I... is defined as base ,.--
lea"".
current with both juncti.......rse r---
biased. Ie is always less than III for VOl > \
C.. -
............
f-
~
20
J
valllp at ~resllold lof conduction.l I--
" :\
TJ=+25'C '.
10 I I I
-0.25 0.5 1.0 1.5 2.0 20.4 0.5 0.7 1.0 2.0 5.0 7.0 10 20
Voo. BASE·EMmER RMRSl BIAS MllTSl REVERSE BIAS !VOLTSl
2-650
2N3902 NPN (SILICON)
2N5157
3.5 AMPERE
POWER TRANSISTORS
HIGH VOLTAGE NPN SILICON TRANSISTORS NPN SILICON
. designed for use in high·voltage inverters, converters, switching 400 and 500 VOLTS
regulators and line operated amplifiers. 100 WATTS
*MAXIMUM RATINGS
Rating Symbol 2N3902 I 2N5157 Unit
Collector-Emitter Voltage VCEO 400 I 500 Vdc
Collector-Emitter Voltage VCEX 700 Vdc
Emitter-Base Voltage VEe 5.0 I 6.0 Vdc
Collector Current - Continuous IC 3.5 Adc
Base Current IS 2.0 Adc
Total Device Dissipation @ T C = 75°C PD 100 Watts
Derate above 75°C 1.33 W/oC
Operating Junction Temperature Range TJ -65 to +150 °c
Q,1
Storage Temperature Range T stg -65 to +200 °c
THERMAL CHARACTERISTICS
I
~,~.:~.~
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case 8JC
J 0.75 °C/W
.I...-- .
FIGURE 1-POWER DERATING
100
t
"
.
;:;; 80
t-
t-
lO
z
0
60
'""'- "
>=
~
ill
i5 40
" "'-
<r
"'
s:
~ 20 '" "
~
" To convert inches to millimeters multiplv by 25.4
60 80 100 120
CASE 11
TO·3
2-651
2N3902, 2N5157 (continued)
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage VCEO(,u,) Vdc
(lC == 100 mAde, IS =: 0) (See Figure 12) 2N3902 325 -
2N5157 400 -
Collector-Emitter Breakdown Voitage BVCER 500 - Vdc
(Ie'" 3.5 Adc, RBE '" 10 Ohms) (See Figure 12) 2N5157
Collector Cutoff Current ICED mAde
(VCE "400 Vdc, IB" 0) 2N3902 0.25 -
ON CHARACTERISTlCS(l)
DC Current Gain hFE -
(IC = 1.0 Adc, VCE = 5.0 Vdcl 2N3902,2N5157 30 90
(IC = 2.5 Adc, VCE = 5.0 Vdc) 2N3902,2N5157 10 -
DYNAMIC CHARACTERISTICS
Current-Gain -Bandwidth Product IT MH,
(IC = 0.2 Adc, VCE" 10 Vdcl 2N3902 2.8 -
(IC = 0.2 Adc, VCE" 12 Vdcl 2N5157 2.8 --
Output Capacitance Cob - 150 pF
(VCB" 20 Vdc, IE = 0, I = 1.0 MH,I 2N5157
--'-----.
SWITCHING CHARACTERISTICS
Turn-On Time ton - 0.8
(VCC = 125 Vdc, IC =1.0 Adc, ISl =0.1 Adcl 2N5157 "'
Turn-Off Time - 1.7
(Vee::: 125 Vdc, Ie::: 1.0 Adc, 181 := 0.1 Adc, 182:= 0.5 Adcl 2N5157
toft
"'
*Indlcates JEDEC Registered Data
(1 )Pulse Test: Pulse WidthS 300 j.1s, Duty Cycle!:: 2.0%.
______ ~ _____ 1_ o. 7
INPUT CU RRENT WAVEFORM ] 0.5
w
"
;::
0.3 /
'A ,
r-1td I@ IV~~("ff) ~ 5.0 Vdc "-
0.1 i'.
JL JJ
O. I
0.05
J I II 0.1 0.1 0.3 0.5
...........
1.0
r-
1.0 3.0 5.0
5.0% Duty Cycle
Ir'" 100 ns "For 2N3902 - change VBB to 5.0 V. IC, COLLECTOR CURRENT (AMPI
2-652
2N3902, 2N5157 (continued)
\.
"
~ ")..
-c"S: ~
~5
.--r 0.1
'JC(') rI') BJC
0
1, TIME !msl
i
B
1.0
I
- - - Second Breakdown Limit
.. . - ... =- Bonding Wire limit _ '"
~
[\.1.0 transistor: junction temperature and secondary breakdown. Safe
operating area curves indicate Ie-VeE fimits of the transistor that
must be observed for reliable operation; I.e., the transistor must not
0.5 - - - - - - Thermal Limil@Tc=75 0 C ~ be subjected to greater dissipation than the curves indicate.
oc Curves Apply Below Rated BVCEO(sus) ms The data of Figure 5 is based on T J(pk) = 150°C; T C is variable
o
B 0.2 "- --I--
depending on conditions. Pulse curves are valid for duty cycles of
de ' \
0. 1 10% provided T J{pkl...s;; 150°C. At high case temperatures, thermal
'"~O.05 limitations will reduce the power that can be handled to values
lass than the 1imitations imposed by secondary breakdown. (See
AN-415)
0.02 1N3902 '
om 2N5i57 - ri-
5.0 10 20 50 100 200 500
5. 0 3000
TJ 25 0e lellBI 10- - -
~+ III
'"- +---
2000
leliB = 2.0- - -
iJ =12~O~
--
C;b
--
2,0
1000
's ~
._-
L0 ~
f-----+
--
~ 500 -+-
;::: 300
5 ....... -f-- r-- :::--
~ - - - c--
tf@Vee=
"'125~
" ;3
200
"""':Ob
02
cS 100 1----=--
...... r--
0. 1
I ./
f---- f--
50 1--'
0.05 30
0,05 0.1 02 0.5 1.0 2.0 5.0 1.0 2.0 3.0 5.0 10 20 30 50 100
2--653
2N3902, 2N5157 (continued)
100 2. 0
0 TJ=1500C TJ = 25°C
I'
1. 6
z
;;:
50
i,...--"'"
""-....
'\
~ VCE = 5.0 Vdc
~o
.JVCE("t@IC/IB= 10
1":""'1 I II
I
'" 0 1. 2
I-
t5 ./
,.... 25°C
-I I~
~
w
VBE(sat) @IC/IB= 10
~'- I.---
~ 20 '" V J
=> ....... ~ ~ o.8
'-'
"''' o
J 1/
~
'-' >
.........- V
,.... -55°C
" :> 1.1
~ 10
0.4
TJ 150°C ",1\'1 I.?- ~
7. 0
5.0 o
VICE(Sr tl i ly/18 ~ 5
I
0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
1000 +2.5
500 ==TJ 150°C ~ +2.0
V ~ +1.5
1 200 -
- :=125~C I-
i:5 +1.0
~ 100 U TJ = -650C to 1500C
'"=>'-'
'"
0
50
20
== i=1000C
~ +0.5
8
w
I I lJlJ.---
8V FOR VCE(sat)'ff
f.-
~
- -75°C ~ -0.5
APPLIES FOR IcllB <hFE/4
10 I-
V
8
ffi -1.0 .......
5.0
;! ~ -1.5 8V FiR V18E1_
REVERSE FORWARD I- J.-- :,.;-
2.0 f - - -25~C VCE 200 Vdc- ~ -2.0
1.0 -2.5 I
-0.4 -0.2 +0.2 +0.4 +0.6 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0
~ 300
J\.lBLov
=> I
-:
'-' 0
'"
0 2~5;I7 ~~IY
~
200 VCEO(s"s) IS ACCEPTABLE WHEN l - - ~
I- VCE;> RATED vr i
T GE @IC=100mA
"""
0
'-' 1.0 0
I
;! 100
2N3902- I
y
,
I
III---~---o
2N5157
o I
500 TEST #2 For 2N5157 Only o L.-
o 100 200 300 400
VBB = 0 VBB o 100 200 300 400 500
RB = 10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
RC = 15
L = 10 mH
2-654
2N3903 (SILICON)
2N3904
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to 9JA 0.357 °C/mW
Ambierit
2-655
2N3903, 2N3904 (continued)
ON CHARACTERISTICS
DC Current Gain.
(Ie = 0.1 mAde, VCE • 1.0 Vde) 2N3903
IS hFE
. 20
-
3N3904 40
35'
-
(Ie • 1. 0 mAde, VCE • 1.0 Vde) 2N3903
2N3904 70
(lC = 10 mAde, VCE = 1.0 Vde) 2N3903 50 ISO
2N3904 100 300
Uc ·50 mAde, VCE = 1.0 Vde) 2N3903
2NS904
SO
60
-
(Ie = 100 mAde, VCE = 1.0 Vde) 2N3903 15
2N3904 30 -
Collector-Emitter Saturation Voltage. 16, 17 Vde
Uc =10 mAde, 1a • 1.0 mAde)
VCE(sat)·
- 0.2
(Ie = 50 mAde, 10 ·5.0 mAde) - 0.3
Base-Emitter Saturation Voltage- 17 VSE(sat)· Vek:
(Ie • 10 mAde, 10 = I. 0 mAde) 0.65 0.85
(Ie • 50 mAde, 1a • 5.0 mAde) - 0.95
SMALL·SIGNAL CHARACTERISTICS
Current-Gain-Ba.ncMtdth Product
(Ie • 10 mAde, VCE ·30 Vde, f · 100 MHz) 2N3903
!.r 250 -
MHz
2N3904 300
Capacitance
Outp.1t 3 COb pF
(VCO ' ~.O Vde, ~ = 0, f = 100kHz) 4.0
Input Capacitance 3 pF
(VOE' O.~ Vde, IC .0, f · 100 kHz)
C'b
- 8.0
Inpu.t Impedance 13 h,. k ohms
(IC = 1.0 mAde, VCE = 10 Vde, f =1.0 kHz) 2N3903 O.~ 8.0
2N3904 1.0 10
Voltage Feedback Ratto 14 hr. X 10-4
(Ie • 1.0 mAde, VCE ·IOVdc, f = 1.0 kHz) 2N3903 0.1 5.0
2N3904 0.5 8.0
Small-Signal Current Gain 11
(Ie = 1.0mAek:, VCE ' 10Vde, f= 1.0 kHz) 2N3903
'1. 50 200
OutPlt Admittance
=
(lC 1.0 mAde, VCE • 10 Vde, f = 1.0 kHz)
2N3904
12 hoe
100
1.0
400
40
...,-
Noise Figure 9, 10 NF dO
(lc • 100 /lAde, VCE =~.O Vde, HS • 1.0 k ohms, 2N3903 -- 6.0
1·10 Hz '0 1~. 7 kHz)
2N3904 5.0
SWITCHING CHARACTERISTICS
Delay Time (VCC ' 3.0 Vde, VOE(offi = 0.5 Vde, I, ~
~, - 35 ns
Rise Time IC • 10 mAde, 101 ' 1.0 mAde)
I, 5, 6
'<- - 3~ .s
Storage Time
(VCC =3.0Vek:, IC = 10mAde,
2NS903
2N3904
2, 7
'. -
175
200
.s
FIGURE 1- DELAY AND RISE TIME EQUIVALENT TEST CIRCUIT FIGURE 2 - STORAGE AND FALL TIME EQUIVALENT TEST CIRCUIT
300ns~ I+- 10<1, < SOO!LS~ I, ~+109V
oon~-~:E
DUTY CYCLE = 2%ff+lo.6 V
-O.SV
< 1.0ns C IN916
9.1 V -I I- < to ns
"Total shunt capacitance of test jig and connectors
2-656
2N3903, 2N3904 (continued)
TRANSIENT CHARACTERISTICS
- T J = 25°C ·--TJ = 125°C
.........
10 0':::-
I-
t-
70 a.
1. o 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 1.0 2.0 3.0 5.0 7.0 [0 20 30 50 70 100 200
REVERSE BIAS VOLTAGE (VOLTSI Ie, COLLECTOR CURRENT ImAl
200 200 ~
r-"
100 " ""['." 100
~
0 - 70
~
0 >= 50
~.."
w
L" t,@Vee 3.0~
"
~
1'),
0 k" 40 V iX 30
.-
~ ....
.5
[5~
0
i"- ,..... Ie'" ~ 0
~
r"
0 0
7. 0 !..@Vo , 0
.ov
5. 0 5. 0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 [00 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (mAl Ie, COLLECTOR CURRENT (mAl
~
100~I~~!f:iiig~~~!ij~~~,----~
~'ii 70~
f-+-+--+-+-+-f++++--+-+--t--+-=lei-II't-t--2t10+~_t-'~'f<l ~
100
le/ 18 20
;:;
50
~+-+--+-+-+-f++++--+-+--t--+-++-- lell, ~ [~d.: ::l
50
'!o..' ...
lell.~ 10 ...
~ 30~+-+--+-+-+-f++++--+I-+--tI--+-+-r+~-+--4 ~ ~'
30
~ ... ...... - --
-
lell,~ 10
,.: 20f-++--+++-+++++--+-+--i--++++++t-H 20 p-
--
1O~~~m
10
50EE 5. 0
1.0 2.0 3.0 5.0 7.0 [0 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie, COLLECTOR CURRENT (mAl Ie, COLLECTOR CURRENT ImAI
2-657
2N3903, 2N3904 (continued)
200 50
I- ~
~ l- 1
iii
20
./
V
~ ~
ii 10
51
oV
15.0
50 .J
2.0
30 1.0
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
Ie. COUECTOR CURRENT (mAl Ie. COlLECTOR CURRENT (mAJ
t 5.0
!S
"\.
~
0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
Ie. COLLECTOR CURRENT (mAl Ie. COUECTOR CURRENT (mAl
2-658
2N3903, 2N3904 (continued)
STATIC CHARACTERISTICS
-
I--" .....,
B 0.5 ~ TJ = -55°C ~
~
~~
z:
0.3
I--
j......-
I-- ~ - ...- ........
t--"
r--.... .....
I'
i"
i 0.2 .~
"\t\.
O. I
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0
Ie. COLLECTOR CURRENT (mAl
10 20 30 50 70 100 "'"l\ 200
6 1
\
4 f'...
"- l"'--
1.0 I--I-+-+--++f+ttt-+-+V';'wt~ + ~~ O. 5
~.,.-+-+-
~IJ5O~-
111 IT j
...f1J.Hf t- /!ve for Ve" ...)
I II I
~ 0.81-t-t-t-t-t+t-ttt-_uHr-Q""v,l",@ft¥-he,HI.H
OV p 0
r-t- ~ 55°C TO +25°C
~ ~
....
li 06I-H-++H-t+++--++++++H+I--+-I ffi -0.5 LllIJ: t::
~ '~~-+++~~+4-+-H4+~~) I III
~ 0.4 ~+-+--+-+-I-+++++---+-+--+-++++1-+-h1/<-+-I ~U_l. 0
-55°C TO +25°C
..... r-
~1-+-+-H+t14t Ve"wtl@lell,= 10
0.2I-H-++H-t+++--+++±;.joI!!-H+I--+-I
I--r-
-I.
1' ..... +rn+1 2Soc
2-659
2N3905 (SILICON)
2N3906
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCB 40 Vdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to 8JA 0.357 °C/mW
Ambient
2-660
2N3.05, 2N3906 (continued)
ON CHARACTERISTICS
IX: Current Gain' ( 11 lyE -
--
(lC = 0.1 mAde, VCE = 1.0 Vde) 2N3905 15 30
2N3906 60
(Ie =1.0 mAde, VCE = 1.0 Vde) 2N3905
2N3906
40
80
-
(IC = 10 mAde, VCE = 1.0 Vde) 2N3905 50 150
2N3906 100 300
(Ie = 50 mAde, VCE = 1.0 Vde) 2N3905 30
60
2N3906
(IC = 100 mAde, VCE = 1. 0 Vde) 2N3905
2N3906
15
30
--
Collector-Emitter Saturation Voltage' 111 18, 17 VcIc
(lC = 10 mAde, IB = 1.0 mAde)
VCE(s.')
- 0.25
(IC = 50 mAcIc, IB = 5.0 mAde) - 0.4
SMAll·SIGNAl CHARACTERISTICS
Current-Gain-Bandwidth Product fT MHz
(lc = 10 mAde, VCE = 20 VcIc, 1= 100 MHz) 2N3905
IN3908
200
250
--
Output Capacitance 3 COb pt
(V CB = 5.0 VcIc, 1z = 0, f = 100 kHz) - 4.5
Input Capacitance 3 C lb pF
(V BE = 0.5 Vde, IC = 0, I = 100 kHz) - 10
SWITCHING CHARACTERISTICS
Delay Time (VCC = 3.0 VcIc, VBE(off) = 0.5 Vde, I, 5 'd - 35 ...
RiBeTime
Starap: Time
Ie = 10 mAde,
(VCC ·3.0 Vde,
'sz
IBI • 1.0 mAde)
Ie
= 10 mAcIc,
2N3905
2N3908
I, 5, 8
2, 7
'r
'.
-
--
35
200
225
....
no
FlaURE 1- DELAY AND RISE TIME EQUIVALENT TEST CIRCUIT FlaURE 2- STOIA8E AND FALL TIME EQUIVALENT TEST CIICUIT
+~.1V--lJ-<l.Ons 10k
~
<I.ons
+o.s:v_u.
-10.6 V~ ... 300 ns
o
IN916
10 < I, < 500 '" -' ....... -Io.n
DUTY CYCLE = 2% DUTY CYCLE = 2%""'" I, r-
*Total shunt capacitance of test iii and CORnectors
2-661
2N3905, 2N3906 (continued)
TRANSIENT CHARACTERISTICS
- T J = 2S"C --- T J = 12S"C
- -- I--.... Q.,
200
100
,.- -- . /
70
I.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 U 10 20 50 ~ 200
REVERSE BIAS !VOlTSJ Ie. COLLECTOR CURRENT (mAl
~ 30 ~
20 ~
I~ 10£ .s
0 ....
.>li I!J> -?
r--. ..... ......
10 0
7. 0 l,,@Vo• 0 7.0
OV
5.0 5.0
1.0 2.0 3.0 5.0 10 20 30 50 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Ie. COllECTOR CURRENT (mAl Ie. COLLECTOR CURRENT (mAl
,
500 500
·1·.~'t-~4 - I' 1.,=1" -
300 le~\!'S: F- ~
:::
In=l ul- 300
" "- ~ Vcc=40V _
200
,....-
- ..... ·\~II. ~IIO
200
~. lell.=20
~ 100
/cll. 10 I
100
I'
iii 70 ~ ;t'" lell. 20
::; 50 , ! 50 lell." 10
5.0 5.0
1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 100 200
/C. COLLECTOR CURRENT ImAl Ie. COllECTOR CURRENT !mAl
2-662
2N390S, 2N3906 (continued)
5.0
0.1 0.2 0.5 1.0 2.0 5.0 10
Ic. COllECTOR CURRENT!mA) Ic. COllECTOR CURRENT (mA)
"
10 7.0
0.5
" ~1 1.0
....... r- V'"
o. 7
0.2 0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 0.1 0.2 0.5 1.0 2.0 5.0 10
Ic. COllECTOR CURRENT (mA) Ic. COllECTOR CURRENT!mA)
2-663
2N3905, 2N3.06 (continued)
STATIC CHARACTERISTICS
-
2.0
TJ I +12~OC I
VeE
I
\.0 V
I~
<..)
O.
O. 5
7
TJ I 550C
........... ~
~
~ ~['I:
I 0.3
i 0.2
~
~
O. I
'\
~
0.1 0.2 0.3 0.5 0.7 \.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
'c. COLLECTOR CURRENT lmAl
,
I.0
\ 1 }J ~ 2~o~
!S o.8
~ le= j.OmA le=IOmA 1\ 'e=30mA le= lOOmA
~ ,\
t o.6
;
:!5 0.4
"'
1"- 1\
;,.. i'..
'"
l'l 0.2
o
\
to-
i'--..
r- I-- - t- I---
I--
.01 .02 .03 .05 .07 0.1 0.2 0.3 0.5 0.7 \.0 2.0 3.0 5.0 7.0 10
I,. BASE CURRENT lmAl