Thin Film Deposition "A technology of applying a very thin film of material between a few nanometers to about 100 micrometers, or the thickness of a few atoms , onto a “substrate” surface to be coated, or onto a previously deposited coating to form layers. "Two methods: & * Physical Vapor Deposition (PVD) - * Chemical Vapor Deposition (CVD)Physical Vapor Deposition (PVD) a vaporization coating process in which an atom by atom transfer of material from the solid phase to the vapor phase and back to the solid phase, gradually building a film on the surface to be coated. "Two most common techniques of PVD are, * Thermal Evaporation * Sputtering. «a manos @Thermal Evaporation Procedure + Metal to be deposited is placed in an inert crucible. + Chamber is evacuated to a pressure of 10-107 Torr * Crucible is heated to vaporized the material used for coating. + Because of the vaccum even a relatively low vapor pressure is sufficient to raise a vapor cloud. “vapor stream traverses the chamber without oye: reacting or scattering mater against other atoms and hits the substrate, sticking to it as a coating or thin film.Thermal Evaporation Procedure (Cont.) There are two methods for heating material in crucible 1. Resistive heating + For low melting point metals(e.g. Al, Ag, Cu) 2. Electron beam heating +The heat prodliced by high energy electron beam bombardment on the material to be deposited. +The electron beam is generated by an electron gun, accelerated by a high voltage potential (kilovolts). A magnetic field is often applied to bend the electron trajectory, allowing the electron gun to be positioned below the evaporation line. + allows controlling the evaporation rate. * high melting point materials (e.g. Cr, Ni, Ti, etc.)Thermal Evaporation Procedure (Cont.) Resistance heating evaporation Electron beam evaporationThermal Evaporation Procedure (Cont.) Advantages of vacuum evaporation: > High-purity films can be deposited from high-purity source material. > Source of material to be vaporized may be a solid in any form and purity. > The line-of-sight trajectory and "limited-area sources" allow the use of masks to define areas'of deposition on the substrate and shutters between the source and substrate to prevent deposition when not desired. > Deposition rate monitoring and control are relatively easy. > itis the least expensive of the PVDThermal Evaporation Procedure (Cont.) Disadvantages of vacuum evaporation: > Many compounds and alloy compositions can be deposited with difficulty. > Line-of-sight and limited-area sources result in poor surface coverage on complex surfaces unless there is proper fixturing and movernent. > Few processing variables are available for film property control. > Large-volume vacuum chambers are generally required to keep an appreciable distance between the hot source and the substrate.Sputtering Sputtering is the deposition process of materials on an atomic level using a charged plasma stream of electrons and ions in a vacuum environment. substrate to be coated is placed in a vacuum chamber containing an inert gas - usually Argon. 3 A negative charge is applied to a target source material that will be deposited onto the substrate This causing the plasma to glow. Free electrons flow from the negatively charged target source material in the plasma environment, colliding with the outer electronic shell of the Argon gas atoms driving these electrons off due to their like charge. Marish sharmaSputtering (Cont.) The inert gas atoms become positively charged ions attracted to the negatively charged target material at a very high velocity that "Sputters off” atomic size particles from the target source material due to the momentum of the collisions. These particles cross the vacuum deposition chamber of the sputter coater and are deposited as a thin film of material on the surface of the substrate to be coated. Sputtering only takes place when the kinetic energy of the bombarding particles is extremely high The number of atoms ejected or “Sputtered off” from the target or source material is called the sputter yield. The sputt yield can be controlled by the energy and incident angle of the bombarding ions, the relative masses of the ions and target atoms, and the surface binding energy of the target atoms. ‘ a @Sputtering ProcessSputtering(Cont.) = The bombardment of the electrons can also create overheating or damage to the substrate to be coated. "Magnetron sputtering deposition uses magnets behind the negative cathode to trap electrons over the negatively charged target material so they are not free to bombard at the substrate. = Don't allow overheating of the Substrate. * Allowing for faster deposition rates.Magnetron sputtering MartshshermeChemical Vapor Deposition "Chemical gas sources are thermally, optically or electrically activated to react with a surface to deposit a layer and byproducts are pumped out from the chamber. * Chemical Vapor Deposition is chemical reactions _ which * dl transform gaseous =m piagl liga’ >" molecules, called precursor, into a solid material, in the form of thin film or powder, | on the surface of a substrate. = "More effective control on the growth rate and the quality of deposition film. ee ‘Hersh Sherme. @ / \Chemical Vapor Deposition "Common thin films deposited by CVD are > Polysilicon Silicon oxide Silicon Nitride Tungsten Titanium Tantalum } Nitrides of W & Ti & Ta Copper > Low permittivity dielectric insulators = Parameters that significantly influence the rate of chemical vapor deposition are: > Temperature > Pressure of carrier gas > Velocity of gas flow > Distance along the direction of gas flowChemical Vapor Deposition Types of CVD » Plasma enhanced CVD (PECVD) > Atmospheric pressure CVD (APCVD) > Low pressure CVD (LPCVD) > Very low pressure CVD(VLCVD) > Metallographic (MOCVD) Process key “Temperature] Pressure | Typical materials ‘Atmospheric | APCVD] 700-800°C | 1 aunos (760 | Polysiticon pressure Tor) Low pressure| LPCVD | 600-620°C _| 0.25 to 2 Torr Polysilicon, Silicon nitride Plasma | PECVD]250-200°C | 100-200 _ | Silicon nitride, jeahanced mTorr Amorphous silicon, Silicon dioxide a aaa @Chemical Vapor Deposition CVD process for silicon dioxide * CVD is used to form SiO, layers that are much thicker in relatively very short times than thermal oxides. * SiO, can be deposited from reacting silane and oxygen in LPCVD reactor at 300 to 500°C. SiH, 40,—1210500% Sid, + 2H, * This may also be done by decomposing dichlorosilane: SiCI,H, +2H,O °C SiO, + 2H, + 2HCI + SiO, can also be LPCVD deposited by from tetraethyl orthosilicate (TEOS or, Si(OC,Hs),) by vaporizing this from a liquid source. = To @Chemical Vapor Deposition VD process for silicon nitride * a LPCVD process Using ammonia as the carrier gas and silane, silicon tetrachloride, or dichlorosilane as other reactants. ‘3SiH, + 4NH, “7 SPPWE sin, + 128 3SiCl, + 4NH, 2S SiN, + 2HCL SNH SisNs + 6HCL+ 6 ijN, deposited by LPCVD include low density, high- temperature strength, superior thermal shock resistance, excellent wear resistance, good fracture toughness, mechanical fatigue and creep resistance, and good oxidation resistance. * These films are used as etch masks, gate insulators, thermal insulators, and chemical-resistant coatings in various devices. ke Hersh sherme.Chemical Vapor Deposition CVD process for Polysilicon * Deposition of polysilicon is done by a decomposition of silane using an LPCVD process. SiH, 20CW60S Si+ 2H, * Polysilicon is often used as a structural material in MEMS. * high-value resistor, when doped, resistivity 500-525 Ocm * Polysilicon is commonly used for MOSFET Gate electrode * Poly can form ohmic contact with Si. Pa natn @Epitaxial Growth of Silicon + Epit process growing a silicon layer on a substrate maintaining its crystalline orientation. + The substrate wafer acts as the seed crystal. + Use vapor-phase epitaxy (VPE) process or molecular-beam epitaxy (MBE) process. * Silicon tetrachloride (SiCI4) is the used silicon sources. SICI, + 2H, 22°C , Si + 4HCI + Ultra high vacuum (107-10 torr) + Amole fraction of 0.03 SiCI, in hydrogen gives a good-quality silicon epilayer. + For mole fractions above 0.28, etching of silicon takes place. + Precise control of chemical composition, impurity profiles, single-crystal multilayer structures on atomic scale are possible in MBE. Pa vi @Thermal Oxidation for Silicon Dioxide + Oxidation involves heating of Si in wet/or dry oxygen/nitrogen mixture. * Wet oxidation Si+2H,0 ——*Si0,+ H, (600° to 12500°C) * Dry oxidation Si+O, ——+ SiO, (600° to 12500°C) * Wet oxidation process results in faster oxide growth. + However, SiO, films grown by this process are less dense and pérous. * Dry oxidation process results in much slower oxide growth (typically one tenth the growth rate of wet oxidation) resulting in films that are compact, dense and nonporous. «e Mesh sharme oSThermal Oxidation for Silicon Dioxide He an oI se 1 wae older ‘con vats Figure: Schematic cagram ofa sicon thermal oxidation system+ Electrolysis: Chemical changes occur due to the flow of electric current through an electrolyte + Deposition of any substance on an electrode as a consequence of electrolysis i called electro deposition. + Governed by Faraday's laws + Magnitude of the chemical change occurring is proportional ® tothe electricity passed. ~~ + Masses of different species deposited at or dissolved form || the electrodes by the same | quantity of electricity are | pupetonanmebaetal | equivalent weights ss a ica @