Solution Manual Physics of Semiconductor Devices

Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 1
Solutions Manual Problem Solutions
Chapter 1
Problem Solutions FG 4πr IJ 3
1.1
4 atoms per cell, so atom vol. = 4
H3K
(a) fcc: 8 corner atoms × 1/8 = 1 atom Then
6 face atoms × ½ = 3 atoms FG 4πr IJ
3
Total of 4 atoms per unit cell

Ratio =
4
H 3 K × 100% ⇒ Ratio = 74%
(b) bcc: 8 corner atoms × 1/8 = 1 atom
3
16 2 r
1 enclosed atom = 1 atom (c) Body-centered cubic lattice
4
d = 4r = a 3 ⇒ a = r
(c) Diamond: 8 corner atoms × 1/8 = 1 atom 3
6 face atoms × ½ = 3 atoms
F 4 rI 3
4 enclosed atoms = 4 atoms Unit cell vol. = a =

H 3K
3

FG 4πr IJ 3
1.2
(a) 4 Ga atoms per unit cell
2 atoms per cell, so atom vol. = 2
H3K
4 Then
Density =
b −8
g 3
⇒
FG 4πr IJ 3
5.65 x10
Density of Ga = 2.22 x10 cm

−3
Ratio =
H 3 K × 100% ⇒
2
Ratio = 68%
F 4r I
22
3
4 As atoms per unit cell, so that

Density of As = 2.22 x10 cm
22 −3
H 3K
(d) Diamond lattice
(b) 8
8 Ge atoms per unit cell Body diagonal = d = 8r = a 3 ⇒ a = r
8 3
Density =
b −8 3
⇒
g F 8r I 3
5.65 x10 Unit cell vol. = a =

H 3K
3
−3
Density of Ge = 4.44 x10 cm
FG 4πr IJ
22
3
1.3
8 atoms per cell, so atom vol. 8
H3K
(a) Simple cubic lattice; a = 2r Then
Unit cell vol = a = (2 r ) = 8r
3 3 3
FG 4πr IJ 3
1 atom per cell, so atom vol. = (1)

FG 4πr IJ
3
Ratio =
H 3 K × 100% ⇒
8
Ratio = 34%
H3K F 8r I 3
Then H 3K
FG 4πr IJ3
Ratio =
H 3 K × 100% ⇒ Ratio = 52.4%
1.4
From Problem 1.3, percent volume of fcc atoms
3
8r is 74%; Therefore after coffee is ground,
(b) Face-centered cubic lattice Volume = 0.74 cm
3
d
d = 4r = a 2 ⇒ a = =2 2r
2
Unit cell vol = a = 2 2 r
3
c h = 16
3
2r
3
3
Then mass density is

1.5 4.85 x10
−23
ρ= ⇒
(a) a = 5.43 A
°
From 1.3d, a =
8
3
r b2.8x10 g−8 3
ρ = 2.21 gm / cm
3
a 3 (5.43) 3 °
so that r = = = 118
. A
8 8
Center of one silicon atom to center of nearest 1.8
(a) a 3 = 2(2.2 ) + 2(1.8) = 8 A
°
°
neighbor = 2r ⇒ 2.36 A
so that
(b) Number density °
8 a = 4.62 A
−3
= ⇒ Density = 5 x10 cm
22
b
5.43 x10
−8 3
g Density of A =
1
⇒ 1.01x10 cm
22 −3
(c) Mass density b4.62 x10 g −8 3
=ρ=
N ( At . Wt .)
=
b5x10 g(28.09) ⇒22
1 −3
Density of B =
b4.62 x10 g ⇒
22
23 −8
1.01x10 cm
NA 6.02 x10
ρ = 2.33 grams / cm
3
(b) Same as (a)
(c) Same material
1.6 1.9
(a) a = 2 rA = 2(1.02) = 2.04 A
°
(a) Surface density
Now 1 1
= 2 = ⇒
2 rA + 2rB = a 3 ⇒ 2rB = 2.04 3 − 2.04
°
a 2 4.62 x10b−8
g 2
2
so that rB = 0.747 A 14
3.31x10 cm
−2
(b) A-type; 1 atom per unit cell

Same for A atoms and B atoms
1 (b) Same as (a)
Density = ⇒
b
2.04 x10
−8 3
g (c) Same material
23 −3
Density(A) = 118
. x10 cm 1.10
B-type: 1 atom per unit cell, so 1
23 −3 (a) Vol density =
. x10 cm
Density(B) = 118 ao
3
1
1.7 Surface density = 2
ao 2
(b)
° (b) Same as (a)
. + 1.0 ⇒ a = 2.8 A
a = 18
(c) 1.11
12 −3 Sketch
Na: Density = = 2.28 x10 cm
22
b2.8x10 g −8 3
1.12
Cl: Density (same as Na) = 2.28 x10 cm
22 −3
(a)
F 1 , 1 , 1I ⇒ (313)
(d)
Na: At.Wt. = 22.99 H 1 3 1K
Cl: At. Wt. = 35.45 (b)
So, mass per unit cell
F 1 , 1 , 1 I ⇒ (121)
1 1
(22.99) + (35.45) H 4 2 4K
= 2 2 −23
23
= 4.85 x10
6.02 x10
4
1.13 2 atoms −2
= ⇒ 9.88 x10 cm
14
(a) Distance between nearest (100) planes is:
d = a = 5.63 A
° b4.50x10 g −8 2
(ii) (110) plane, surface density,

(b)Distance between nearest (110) planes is:
2 atoms −2
1 a 5.63 = ⇒ 6.99 x10 cm
14
d= a 2=
2 2
=
2 b
2 4.50 x10
−8 2
g
or (iii) (111) plane, surface density,
d = 3.98 A
°
F1 1 I
(c) Distance between nearest (111) planes is: =
H
3⋅ + 3⋅
6 2
=
K4
1
d= a 3=
a
=
5.63 3 2
a
3 4.50 x10
−8 2
b g
3 3 3 2
or or . x10 cm
114
15 −2
°
d = 3.25 A
1.15
1.14 (a)
(a) (100) plane of silicon – similar to a fcc,
Simple cubic: a = 4.50 A
° 2 atoms
surface density = ⇒
(i) (100) plane, surface density,
1 atom
5.43 x10 b
−8 2
g
−2 14 −2
= ⇒ 4.94 x10 cm
14
6.78 x10 cm
b
4.50 x10
−8 2
g (b)
(ii) (110) plane, surface density, (110) plane, surface density,
1 atom −2 4 atoms
⇒ 3.49 x10 cm −2
14
= ⇒ 9.59 x10 cm
14
=
b
2 4.50 x10
−8 2
g b
2 5.43 x10
−8 2
g
(iii) (111) plane, surface density, (c)
1 FI 1 (111) plane, surface density,
3
6 HK
atoms
2 1 =
4 atoms
⇒ 7.83 x10 cm
14 −2
=
1
c h
a 2 ( x)
=
1
⋅a 2 ⋅
a 3
=
3a
2
b
3 5.43 x10
−8 2
g
2 2 2
1 1.16
−2
= ⇒ 2.85 x10 cm
14
b
3 4.50 x10
−8
g 2
then
d = 4r = a 2
(b) 4r 4(2.25) °
Body-centered cubic a= = = 6.364 A
(i) (100) plane, surface density, 2 2
14 −2 (a)
Same as (a),(i); surface density 4.94 x10 cm
4 atoms
(ii) (110) plane, surface density, Volume Density = ⇒
=
2 atoms
⇒ 6.99 x10 cm
14 −2
6.364 x10
−8
b g 3
b
2 4.50 x10
−8 2
g . x10 cm
155
22 −3
(iii) (111) plane, surface density, (b)

14 −2 Distance between (110) planes,
Same as (a),(iii), surface density 2.85 x10 cm
1 a 6.364
(c) = a 2 = = ⇒
Face centered cubic 2 2 2
(i) (100) plane, surface density or
5
°
4.50 A
1.20
(c)
Surface density b5x10 g(30.98) ⇒ 16
=
2 atoms
=
2
(a) Fraction by weight ≈
b5x10 g(28.06) 22
2a
2
b
2 6.364 x10
−8
g 2
. x10
110
−6
or (b) Fraction by weight

3.49 x10 cm
14 −2
b10 g(10.82) 18
≈
b5x10 g(30.98) + b5x10 g(28.06) ⇒
16 22
1.17 −6
−3
7.71x10
Density of silicon atoms = 5 x10 cm
22
and 4
valence electrons per atom, so 1.21
23 −3
Density of valence electrons 2 x10 cm 1 −3
Volume density = = 2 x10 cm
15
3
d
1.18 So
Density of GaAs atoms −6
d = 7.94 x10 cm = 794 A
°
8 atoms −3
= = 4.44 x10 cm
22 °
We have a O = 5.43 A
b
5.65 x10
−8 3
g So
An average of 4 valence electrons per atom, d 794 d
23 −3 = ⇒ = 146
Density of valence electrons 1.77 x10 cm a O 5.43 aO
1.19
16
2 x10
(a) Percentage = 22
x100% ⇒
5 x10
−5
4 x10 %
15
1x10
(b) Percentage = 22
x100% ⇒
5 x10
−6
2 x10 %
6
Chapter 2
Problem Solutions p = 5.4 x10
−25
kg − m / s
−34
2.1 Computer plot h 6.625 x10
λ= = −25
⇒
p 5.4 x10
2.2 Computer plot or
°
λ = 12.3 A
2.3 Computer plot
−17
(ii) K.E. = T = 100 eV = 1.6 x10 J
2.4 −24
p= 2 mT ⇒ p = 5.4 x10 kg − m / s
2πx
For problem 2.2; Phase = − ωt = constant h
λ λ= ⇒ λ = 1.23 A
°
Then p
2π dx dx λ F I (b) Proton: K.E. = T = 1 eV = 1.6 x10
−19
J
⋅
λ dt
− ω = 0 or
dt
= v = +ω
2π p
H K p= 2 mT = b
2 1.67 x10
−27
gb1.6x10 g −19
2πx
For problem 2.3; Phase = + ωt = constant or
λ p = 2.31x10
−23
kg − m / s
Then
2π dx dx λ F I h 6.625 x10
−34
⋅
λ dt
+ ω = 0 or
dt
= v p = −ω
2π H K λ=
p
=
2.31x10
−23
⇒
or
°
2.5 λ = 0.287 A
hc hc (c) Tungsten Atom: At. Wt. = 183.92
E = hν = ⇒λ =
λ E For T = 1 eV = 1.6 x10
−19
J
b g
Gold: E = 4.90 eV = (4.90) 1.6 x10
−19
J
p= 2 mT
So
b6.625x10 gb3x10 g ⇒ 2.54 x10
−34 10 = b
2(183.92 ) 1.66 x10
−27
gb1.6x10 g −19
λ=
−5
(4.90)b1.6 x10 g −19

cm or
−22
p = 313
. x10 kg = m / s
or
λ = 0.254 µm h 6.625 x10
−34
λ= = ⇒
Cesium: E = 1.90 eV = (1.90) 1.6 x10 b −19
g J
or
p 3.13x10
−22
So
λ=
b6.625x10 gb3x10 g ⇒ 6.54 x10
−34 10
−5
λ = 0.0212 A
°
(1.90)b1.6 x10 g −19

cm (d) A 2000 kg traveling at 20 m/s:
p = mv = (2000)(20) ⇒
or
or
λ = 0.654 µm
p = 4 x10 kg − m / s
4
−34
2.6 h 6.625 x10
−19
λ= = ⇒
(a) Electron: (i) K.E. = T = 1 eV = 1.6 x10 J p 4 x10
4
p= 2 mT = b
2 9.11x10
−31
gb1.6x10 g −19 or
λ = 1.66 x10
−28
A
°
or
9
2.7 or
3 3 E = 1.822 x10
−22
J ⇒ E = 114
. x10 eV
−3
E avg = kT = (0.0259) ⇒
2 2 Also
or
E avg = 0.01727 eV
b
p = mv = 9.11x10
−31
gb2 x10 g ⇒ 4
−26
p = 1822
. x10 kg − m / s
Now
Now
pavg = 2 mE avg −34
h 6.625 x10
= b
2 9.11x10
−31
g(0.01727)b1.6x10 g −19 λ=
p
=
1822
. x10
−26
⇒
or λ = 364 A
°
−26
pavg = 7.1x10 kg − m / s (b)
−34
Now h 6.625 x10
−34 p= = ⇒
h 6.625 x10 λ 125 x10
−10
λ= = −26
⇒ −26
p 7.1x10 p = 5.3x10 kg − m / s
or Also
°
λ = 93.3 A p 5.3 x10
−26
v= = = 5.82 x10 m / s
4
−31
m 9.11x10
2.8 or
hc v = 5.82 x10 cm / s
6
E p = hν p =
λp Now
Now
pe
2
h 1 FG h IJ 2 E=
1
2
mv =
2 1
2
b9.11x10 gb5.82 x10 g −31 4 2
2m H λ K
Ee = and pe = ⇒ Ee = or
2m λe e −21 −3
E = 1.54 x10 J ⇒ E = 9.64 x10 eV
Set E p = E e and λ p = 10λ e
Then
hc FG h IJ
1
2
FG 10h IJ
1
2 2.10
b6.625x10 gb3x10 g −34 8
2m H λ K
hc
2m H λ K
= =
λp (a) E = hν = = −10
e p λ 1x10
which yields or
100h E = 1.99 x10
−15
J
λp =
2 mc Now
Ep = E =
hc
=
hc
⋅ 2 mc =
2 mc
2
E = e ⋅ V ⇒ 1.99 x10
−15
b
= 1.6 x10
−19
gV
λp 100h 100 so
b gb3x10 g V = 12.4 x10 V = 12.4 kV

3
−31 8 2
2 9.11x10
=
100
⇒
(b) p = 2 mE = b
2 9.11x10
−31
gb1.99 x10 g −15
So −23
−15
= 6.02 x10 kg − m / s
E = 1.64 x10 J = 10.3 keV
Then
−34
h 6.625 x10 °
2.9 λ= = −23
⇒ λ = 0.11 A
p 6.02 x10
(a) E =
1
2
mv =
2 1
2
b9.11x10 gb2 x10 g −31 4 2
10
2.11
−34 −34
h 1.054 x10 1.054 x10
(a) ∆p =
∆x
=
10
−6
−28
⇒ (b) ∆t =
b
(1) 1.6 x10 −19 g⇒
∆p = 1.054 x10 kg − m / s or
−16
(b) ∆t = 6.6 x10 s
hcF I = pc p
E=
λ H hK = hc
2.16
So (a) If Ψ1 ( x , t ) and Ψ2 ( x , t ) are solutions to
∆E = c( ∆p) = b3x10 gb1.054 x10 g ⇒ Schrodinger’s wave equation, then
8 −28
or
−h ∂ Ψ1 ( x , t ) ∂Ψ1 ( x , t )
2 2
+ V ( x )Ψ1 ( x , t ) = jh
−20
∆E = 3.16 x10 J ⇒ ∆E = 0.198 eV ⋅
∂x ∂t
2
2m
and
2.12
−h ∂ Ψ2 ( x , t ) ∂Ψ2 ( x , t )
2 2
+ V ( x )Ψ2 ( x , t ) = jh
−34
h 1.054 x10 ⋅
(a) ∆p = = −10
⇒ 2m ∂x
2
∂t
∆x 12 x10 Adding the two equations, we obtain
−26
∆p = 8.78 x10 kg − m / s −h
2
∂
2
(b) ⋅ Ψ1 ( x , t ) + Ψ2 ( x , t )
2m ∂x
2
∆E =
1
⋅
( ∆p)2
=
1
⋅
b8.78x10 g −26 2
⇒
+V ( x ) Ψ1 ( x , t ) + Ψ2 ( x , t )
−29
2 m 2 5 x10 ∂
−23 −4 Ψ1 ( x , t ) + Ψ2 ( x , t )
= jh
∆E = 7.71x10 J ⇒ ∆E = 4.82 x10 eV ∂t
which is Schrodinger’s wave equation. So
2.13 Ψ1 ( x , t ) + Ψ2 ( x , t ) is also a solution.
(a) Same as 2.12 (a), ∆p = 8.78 x10
−26
kg − m / s (b)
If Ψ1 ⋅ Ψ2 were a solution to Schrodinger’s wave
(b)
equation, then we could write
∆E =
1
⋅
( ∆p)2
=
1
⋅
b8.78x10 g −26 2
⇒ −h
2
∂
2
aΨ ⋅ Ψ f + V ( x)aΨ ⋅ Ψ f
−26
2 m 2 5 x10 2m ∂x
2 1 2 1 2
aΨ ⋅ Ψ f
−26 −7
∆E = 7.71x10 J ⇒ ∆E = 4.82 x10 eV ∂
= jh 1 2
∂t
2.14 which can be written as
∆p =
h
=
1.054 x10
−34
= 1.054 x10
−32 −h LMΨ ∂ Ψ + Ψ ∂ Ψ + 2 ∂Ψ ⋅ ∂Ψ OP
2 2
2
2
1 1 2
2m N ∂x ∂x Q
−2
∆x 10 ∂x
1
∂x
2 2 2
p = mv ⇒ ∆v =
∆p
=
1.054 x10
−32
⇒ +V ( x )Ψ ⋅ Ψ = jh Ψ
LM ∂Ψ + Ψ ∂Ψ OP
N ∂t ∂t Q
2 1
m 1500 1 2 1 2
or
−36
Dividing by Ψ ⋅ Ψ we find
−h L 1 ∂ Ψ 1 ∂Ψ ∂Ψ O
1 2
∆v = 7 x10 m/s
1 ∂ Ψ
2 2 2
2.15
M ⋅
2 m N Ψ ∂x
+
Ψ ∂x
2
⋅ + P
Ψ Ψ ∂x ∂x Q
2
2
1
2
1
1 2
1 2
(a) ∆p =
h
=
1.054 x10
−34
⇒
L 1 ∂Ψ + 1 ∂Ψ OP
+V ( x ) = jh M 2 1
∆x 10
−10
−24
N Ψ ∂t Ψ ∂x Q 2 1
∆p = 1.054 x10 kg − m / s
11
Since Ψ1 is a solution, then 2.19
z
∞
−h ∂ Ψ1 ∂Ψ1
2 2
1 1 Note that Ψ ⋅ Ψ dx = 1
*
⋅ ⋅ + V ( x ) = jh ⋅ ⋅
2 m Ψ1 ∂x Ψ1 ∂t
2
0
Subtracting these last two equations, we are left Function has been normalized
with (a) Now
−h LM 1 ∂ Ψ + 2 ∂Ψ ∂Ψ OP
2 2
L
P= z M
ao 4
F −xIO
expG J P dx
2
2
2 m N Ψ ∂x Ψ Ψ ∂x ∂ x Q
2
2
2
1 2
1 2
N a 0
H a KQ o o
= jh
1 ∂Ψ2 2
z expG
F −2 x IJdx
ao 4
Ψ2 ∂t
=
a Ha K
o 0 o
Since Ψ2 is also a solution, we may write

2 F −a I F −2 x IJ
expG
ao 4
a H 2 K Ha K
−h
2
1 ∂ Ψ2
2
1 ∂Ψ2 = o
+ V ( x ) = jh o o 0
2 m Ψ2 ∂x Ψ2 ∂t
2
or
Subtracting these last two equations, we obtain L F −2a IJ − 1OP = 1 − expF −1I
P = −1MexpG
−h
⋅
2
∂Ψ ∂Ψ 2
⋅ 1 ⋅ 2 − V ( x) = 0 N H 4a K Q H 2K o
o
2 m Ψ1 Ψ2 ∂x ∂x which yields
This equation is not necessarily valid, which P = 0.393
means that Ψ1 Ψ2 is, in general, not a solution to (b)
Schrodinger’s wave equation. F
P= z G
ao 2
F −xII
expG J J dx
2
2
2.17
H a
ao 4
H a KK o o
Ψ( x , t ) = A sin(πx ) exp( − jωt ) 2

z F −2 x IJdx
expG
ao 2
=
Ha K
z z a
+1 +1
Ψ( x , t ) dx = 1 = A sin (πx )dx

2 2 2 o ao 4 o
−1 −1 2 F −a I F −2 x IJ
expG
ao 2
a H 2 K Ha K
or = o
LM 1 x − 1 sin(2πx)OP +1 o o ao 4
⋅
N 2 4π Q =1 or
2
A
−1
LM F −1I OP
which yields
A = 1 or A = +1 , − 1 , + j , − j
2
P = −1 exp( −1) − exp
N H 2 KQ
which yields
P = 0.239
2.18 (c)
Ψ( x , t ) = A sin(nπx ) exp( − jωt ) F
P = zG
ao
F −xII
expG J J dx
2
2
z
+1
Ψ( x , t ) dx = 1 = A
2 2
z
+1
sin ( nπx )dx

2 Ha 0
H a KK o o
0 0 2
z F −2 x IJdx = 2 F −a I expFG −2 x IJ
expG
ao ao
=
Ha K aH2K Ha K
o
or
LM 1 x − 1 sin(2nπx)OP +1 a o 0 o o o 0
N 2 4nπ Q
2
A ⋅ =1 or
0 P = −1 exp( −2 ) − 1
which yields which yields
2
A = 2 or P = 0.865
A=+ 2 ,− 2,+ j 2,− j 2
12
2.20
(a) kx − ωt = constant 2.22
Then
dx dx ω E=
hnπ
2 2 2
=
b1.054 x10 g π n −34 2 2 2
k −ω = 0⇒ = vp = + 2b9.11x10 gb100 x10 g

2 2
2 ma −31 −10
dt dt k
or so
15
. x10
13
E = 6.018 x10 n
−22 2
(J)
vp = = 10 m / s
4
15
. x10
9 or
v p = 10 cm / s
6 E = 3.76 x10 n
−3 2
(eV )
Then
(b) −3
n = 1 ⇒ E1 = 3.76 x10 eV
2π 2π 2π
k= ⇒λ = = −2
λ k . x10
15
9 n = 2 ⇒ E 2 = 1.50 x10 eV
or n = 3 ⇒ E 3 = 3.38 x10 eV
−2
°
λ = 41.9 A
Also 2.23
−34
h 6.625 x10 hnπ
2 2 2
p= = −10
⇒ (a) E =
λ 41.9 x10 2 ma
2
or
p = 158
. x10
−25
kg − m / s =
b1.054 x10 g π n −34 2 2 2
2b9.11x10 gb12 x10 g

−31 −10 2
Now
E = hν =
hc
=
b6.625x10 gb3x10 g −34 8
= 4.81x10 n
−20 2
(J)
λ 41.9 x10
−10
So
−20
or E1 = 4.18 x10 J ⇒ E1 = 0.261 eV
−17
E = 4.74 x10 J ⇒ E = 2.96 x10 eV
2
−19
E 2 = 1.67 x10 J ⇒ E 2 = 1.04 eV
(b)
2.21
ψ ( x ) = A exp − j kx + ωt b g E 2 − E 1 = hν =
hc
λ
⇒λ=
hc
∆E
where or
k=
2 mE
λ=
b6.625x10 gb3x10 g ⇒ −34 8
−19 −20
h 1.67 x10 − 4.18 x10
=
b
2 9.11x10
−31
g(0.015)b1.6x10 g −19
or
λ = 159
. x10 m
−6
−34
1.054 x10 λ = 1.59 µm
or
−1
k = 6.27 x10 m
8
2.24
Now (a) For the infinite potential well
ω=
E
=
b
(0.015) 1.6 x10 −19 g E=
hnπ
2 2 2
⇒n =
2 2 ma E
2
−34
h 1.054 x10 2 ma
2
hπ
2 2
or so
ω = 2.28 x10 rad / s
13
n =
2
b gb10 g b10 g = 182. x10
2 10
−5 −2 2 −2
56
b1.054 x10 g π −34 2 2
or
13
n = 1.35 x10
28
2 mE
(b) where K = 2
h
hπ
2 2
Boundary conditions:
∆E = (n + 1)2 − n 2
2 ma
2
+a −a
ψ ( x ) = 0 at x = ,x=
hπ
2 2
2 2
= 2
(2n + 1) So, first mode:
2 ma
or ψ 1 ( x ) = A cos Kx
∆E =
b1.054 x10 g π (2)b1.35x10 g −34 2 2 28
where K =
π
so E1 =
π h
2 2
2b10 gb10 g
2
−5 −2 2
a 2 ma
−30
Second mode:
∆E = 1.48 x10 J ψ 2 ( x ) = B sin Kx
−30
Energy in the (n+1) state is 1.48 x10 Joules 2π 4π h
2 2
larger than 10 mJ. where K = so E 2 = 2

(c) a 2 ma
Quantum effects would not be observable. Third mode:
ψ 3 ( x ) = A cos Kx
2.25
3π 9π h
2 2
For a neutron and n = 1:
where K = so E 3 =
E1 =
hπ
2 2
=
b1.054 x10 gπ −34 2
a 2 ma
2
2b1.66 x10 gb10 g

2 2 Fourth mode:
2 ma −27 −14
ψ 4 ( x ) = B sin Kx
or
4π 16π h
2 2
E1 = 2.06 x10 eV
6
where K = so E 4 = 2
For an electron in the same potential well: a 2 ma
E =
b1.054 x10 g π −34 2 2
2.27
2b9.11x10 gb10 g
1 2
−31 −14
The 3-D wave equation in cartesian coordinates,
for V(x,y,z) = 0
or
∂ ψ ( x , y , z) ∂ ψ ( x , y, z) ∂ ψ ( x , y , z)
2 2 2
E1 = 3.76 x10 eV
9
+ +
∂x ∂y ∂z
2 2 2
2.26 2 mE
ψ ( x , y , z) = 0
+
Schrodinger’s wave equation h
2
∂ ψ ( x) Use separation of variables, so let

2
2m
+ ( E − V ( x ))ψ ( x ) = 0 ψ ( x , y , z ) = X ( x )Y ( y )Z ( z )
∂x
2 2
h
We know that Substituting into the wave equation, we get
a −a
ψ ( x ) = 0 for x ≥ and x ≤ ∂ X
2
∂Y
2
∂ Z
2
2 mE
2 2 YZ + XZ + XY + XYZ = 0
∂x ∂y ∂z
2 2 2 2
−a +a h
V ( x ) = 0 for ≤x≤
2 2 2 mE
Dividing by XYZ and letting k =
2
2
, we
so in this region h
∂ ψ ( x) obtain
2
2 mE
+ ψ ( x) = 0 1 ∂ X 1 ∂Y 1 ∂ Z
2 2 2
∂x
2 2
h (1) ⋅ 2 + ⋅ 2 + ⋅ 2 +k =0
2
Solution is of the form X ∂x Y ∂y Z ∂z

ψ ( x ) = A cos Kx + B sin Kx We may set
14
1 ∂ X ∂ X ∂ X
2 2 2
⋅ 2 = − k x so + kx X = 0 + kx X = 0
2 2 2
X ∂x ∂x ∂x
2 2
Solution is of the form Solution is of the form:

X ( x ) = A sin k x x + B cos k x x a f a f a f
X = A sin k x x + B cos k x x a f
Boundary conditions: X (0) = 0 ⇒ B = 0 But X ( x = 0) = 0 ⇒ B = 0
nx π So
and X ( x = a ) = 0 ⇒ k x =
a X = A sin k x x a f
where n x = 1 , 2 , 3 ,... Also, X ( x = a ) = 0 ⇒ k x a = nx π
Similarly, let Where n x = 1 , 2 , 3 , . . .
1 ∂Y 1 ∂ Z nxπ
2 2
⋅ 2 = − k y and ⋅ 2 = −kz So that k x =

2 2
Y ∂y Z ∂z a
Applying the boundary conditions, we find We can also define
nyπ 1 ∂Y
2
⋅ 2 = −k y
2
ky = , n y = 1 , 2 , 3 ,...
a Y ∂y
nπ Solution is of the form
k z = z , nz = 1 , 2 , 3 ,...
a b g
Y = C sin k y y + D cos k y y b g
From Equation (1) above, we have But
−k x − k y − kz + k = 0
2 2 2 2
Y ( y = 0) = 0 ⇒ D = 0
or and
2 mE Y ( y = b) = 0 ⇒ k y b = n y π
kx + k y + kz = k =
2 2 2 2
h
2 so that
so that n yπ
ky =
hπ
bn + n + n g
2 2
b
E ⇒ E n x n y nz =
2 2 2
2 ma
2 x y z Now
2 mE
−kx − k y + =0
2 2
2
2.28 h
For the 2-dimensional infinite potential well: which yields
hπ
2
FG n
2 2 2
nyIJ
2m H a b K
∂ ψ ( x, y)
2
∂ ψ ( x, y)
2
2 mE E ⇒ E nx n y = x
2
+ 2
+ + ψ ( x, y) = 0
∂x ∂y
2 2 2
h
Similarities: energy is quantized
Let ψ ( x , y ) = X ( x )Y ( y ) Difference: now a function of 2 integers
Then substituting,
∂ X
2
∂Y
2
2 mE 2.29
Y +X + XY = 0 (a) Derivation of energy levels exactly the same
∂x ∂y
2 2 2
h as in the text.
Divide by XY
bn − n g
hπ
2 2
So (b) ∆E =
2
2
2
1
2
2 ma
1 ∂ X 1 ∂ Y 2 mE
2 2
⋅ 2 + ⋅ 2 + 2 =0
X ∂x Y ∂y h For n2 = 2 , n1 = 1
Let Then
1 ∂ X
2
3h π
2 2
⋅ 2 = −kx
2
∆E =
X ∂x 2 ma
2
or
15
(i) a=4 A
°
∂ψ 1 ( x ) ∂ψ 2 ( x )
(2) =
∆E =
b
3 1.054 x10
−34
gπ
2 2
⇒
∂x x = 0 ∂x x = 0
Applying the boundary conditions to the
b
2 1.67 x10
−27
gb4 x10 g −10 2
solutions, we find
−3 B1 = A2 + B2
∆E = 3.85 x10 eV
K 2 A2 − K2 B2 = − K1 B1
(ii) a = 0.5 cm Combining these two equations, we find
b gπ
2 FG K − K IJ B FG 2 K IJ B
A2 =
HK +K K HK +K K and B1 =
−34 2 2 1 2
3 1.054 x10 2 2
∆E = ⇒
b
2 1.67 x10
−27
gb0.5x10 g −2 2 2
The reflection coefficient is

1 2 1
A A
⇒ R=G
*
F K − K IJ 2
R=
HK +K K
−17 2 2 2 1
∆E = 2.46 x10 eV *
BB 2 2 2 1
The transmission coefficient is

2.30
(a) For region II, x > 0 4 K1 K 2
∂ ψ 2 ( x)
2
2m
+ 2 E − VO ψ 2 ( x ) = 0 a f
T = 1− R ⇒ T =
K1 + K 2 a f 2
∂x
2
h
General form of the solution is 2.31
a f
ψ 2 ( x ) = A2 exp jK2 x + B2 exp − jK2 x a f In region II, x > 0 , we have
a f
ψ 2 ( x ) = A2 exp − K2 x
where
where
K2 =
h
2
2m
E − VO a f K2 =
2 maV − E f O
2
Term with B2 represents incident wave, and h
For VO = 2.4 eV and E = 2.1 eV
term with A2 represents the reflected wave.
Region I, x < 0 R| 2b9.11x10 g(2.4 − 2.1)b1.6x10
K =S
−31 −19
g U|V 1/ 2
∂ ψ 1 ( x)
|T b1.054 x10 g |W
2
2 mE
ψ 1 ( x) = 0
2 2
+ −34
∂x
2 2
h
The general solution is of the form or
a f
ψ 1 ( x ) = A1 exp jK1 x + B1 exp − jK1 x a f K 2 = 2.81x10 m
9 −1
Probability at x compared to x = 0, given by

where
2
K1 =
h
2 mE
2
P=
ψ 2 ( x)
ψ 2 (0)
= exp −2 K2 x a f
°
Term involving B1 represents the transmitted (a) For x = 12 A
wave, and the term involving A1 represents the
reflected wave; but if a particle is transmitted
P = exp −2 2.81x10 b 9
gb12 x10 g ⇒ −10
−3
into region I, it will not be reflected so that P = 118
. x10 = 0.118 %
A1 = 0 . (b) For x = 48 A°
Then
a f
ψ 1 ( x ) = B1 exp − jK1 x
P = exp −2 2.81x10 b 9
gb48x10 g ⇒ −10
ψ ( x ) = A expa jK x f + B expa − jK x f
−10
P = 1.9 x10 %
2 2 2 2 2
(b)
2.32
Boundary conditions:
For VO = 6 eV , E = 2.2 eV
(1) ψ 1 ( x = 0) = ψ 2 ( x = 0)
We have that
16
FG E IJ FG1 − E IJ expa−2 K af b
T = 3 exp −2 4.124 x10
9
gb15x10 g −10
HV KH V K
T = 16
O O
2
or
−5
where T = 1.27 x10
2 maV − E f
K = 2
O
2 2.34
h −14
VO = 10 x10 eV , E = 3 x10 eV , a = 10
6 6
m
R| 2b9.11x10 g(6 − 2.2)b1.6x10
=S
−31 −19
g U|V 1/ 2
and m = 1.67 x10

−27
kg
|T b1.054 x10 g −34 2
|W Now
or
−1
K2 =
a
2 m VO − E f
K 2 = 9.98 x10 m
9 2
h
For a = 10
−10
m R| 2b1.67 x10 g(10 − 3)b10 gb1.6x10
=S
−27 6 −19
g U|V 1/ 2
F 2.2 I F1 − 2.2 I exp −2b9.98x10 gb10 g T| b1.054 x10 g W|

H 6 KH 6 K
−10 2
T = 16
9 −34
or
or −1
K 2 = 5.80 x10 m
14
T = 0.50
For a = 10 m
−9 So
F 3 I F1 − 3 I exp −2b5.80x10 gb10 g
H 10K H 10K
−14
T = 16
−9 14
T = 7.97 x10
or
2.33 −5
Assume that Equation [2.62] is valid: T = 3.06 x10
FG E IJ FG1 − E IJ expa−2 K af
T = 16
HV KH V K
O O
2 2.35
Region I, V = 0 ( x < 0) ; Region II,
(a) For m = (0.067 )mo V = VO ( 0 < x < a ) ; Region III, V = 0 ( x > a ) .
a
2 m VO − E f (a) Region I;
K2 =
h
2
a f
ψ 1 ( x ) = A1 exp jK1 x + B1 exp − jK1 x a f
R| 2(0.067)b9.11x10 g(0.8 − 0.2)b1.6x10
−31 −19
g U|V 1/ 2 (incident) (reflected)
= S| b1.054 x10 g |W
Region II;
a f
ψ 2 ( x ) = A2 exp K2 x + B2 exp − K2 x a f
T −34 2
Region III;
or
K 2 = 1.027 x10 m
9 −1 a f
ψ 3 ( x ) = A3 exp jK1 x + B3 exp − jK1 x a f
(b)
Then
F 0.2 I F1 − 0.2 I exp −2b1.027 x10 gb15x10 g In region III, the B3 term represents a reflected
H 0.8 K H 0.8 K
−10
T = 16
9
wave. However, once a particle is transmitted
into region III, there will not be a reflected wave
or which means that B3 = 0 .
T = 0.138 (c)
(b) For m = (1.08)mo Boundary conditions:
R| 2(1.08)b9.11x10 g(0.8 − 0.2)b1.6x10

K =S
−31 −19
g U|V 1/ 2 For x = 0: ψ 1 = ψ 2 ⇒ A1 + B1 = A2 + B2
dψ 1 dψ 2
|T
2
b1.054 x10 g −34 2
|W dx
=
dx
⇒ jK1 A1 − jK1 B2 = K 2 A2 − K2 B2
or For x = a: ψ 2 = ψ 3 ⇒
Then
K 2 = 4.124 x10 m
9 −1
a f
A2 exp K2 a + B2 exp − K2 a = A3 exp jK1a a f a f
And also
17
dψ 2 dψ 3 F 2m I aV = E f( E )
dx
=
dx
⇒ =
Hh K 2 O
a f
K2 A2 exp K2 a − K2 B2 exp − K2 a a f or
= jK A expa jK a f F 2m I V FG1 − E IJ ( E ) 2
K K =
Hh K H V K
2 2
1 3 1
1 2 2 O
Transmission coefficient is defined as O
A3 A3
*
Then
T=
A1 A1
*
F 2mV I expa2 K af 2
Hh K
* O
AA 3 3 2 2
so from the boundary conditions, we want to
AA =
LF 2m I V FG1 − E IJ ( E )OP
*
1 1 2
solve for A3 in terms of A1 . Solving for A1 in
16 M
terms of A3 , we find NH h K H V K Q 2 O
*
O
AA
lb K − K g expa K af − expa− K af
+ jA3 =
F E IF E I
3 3
A1 =
2 2
16G J G 1 − J expa −2 K a f
HV KH V K
2 1 2 2
4K K 1 2 2
−2 jK K expa K a f + expa − K a f s expa jK a f

O O
1 2 2 2 2 or finally
We then find that AA F E IF E I
= 16G J G 1 − J expa −2 K a f
*
T=
HV KH V K
3 3
a4 K K f lb K − K g expa K af
*
A3 A3 AA
* 2
A1 A1 =
* 2 2
1 1 O O
2 2 1 2
1 2
− expa − K a f
2
2
2.36
+4 K K expa K a f + expa − K a f r
2 2 2
Region I: V = 0
∂ ψ1
2
1 2 2 2
2 mE
We have ψ1 = 0⇒+
2 maV − E f
∂x
2 2
h
K =
2
h
O
2
ψ 1 = A1 exp jK1 x + B1 exp − jK1 x a f a f
(incident wave) (reflected wave)
and since VO >> E , then K 2 a will be large so
2 mE
that where K1 =
a f a f
2
h
exp K2 a >> exp − K2 a
Region II: V = V1
Then we can write
∂ ψ2
2
fψ = 0 ⇒ a
2 m E − V1
a4 K K f lb K − K g expa K af
*
A3 A3 2
+
A1 A1 =
* 2 2
2
∂x
2 2
2 2 1 2
h
ψ = A expa jK x f + B expa − jK x f
1 2
+4 K K expa K a f r
2 2 2 2 2 2 2 2
1 2 2
(transmitted (reflected
which becomes wave) wave)
a f
a4 K K f b K + K g expa2 K af
*
A3 A3 2 m E − V1
A1 A1 =
* 2 2
2 2 1 2 where K 2 = 2
1 2 h
Substituting the expressions for K1 and K2 , we Region III: V = V2
find
2 mVO
∂ ψ3
2
a fψ = 0 ⇒+
2 m E − V2
3
∂x
2 2
K1 + K2 =
2 2
h
ψ = A expa jK x f
2
h
3 3 3
and
LM a
2 m VO − E 2 mE f OL O
PQMN PQ
(transmitted wave)
2 ma E − V f
K1 K 2 =
N
2 2
2 2
h h where K = 3 2
2
h
There is no reflected wave in region III.
18
The transmission coefficient is defined as (b)

v 3 A3 A3 K AA
* * Boundary conditions:
T= ⋅ *
= 3 ⋅ 3 3* x = 0: ψ 1 = ψ 2 ⇒ B1 = B2
v1 A1 A1 K1 A1 A1
∂ψ 1 ∂ψ 2
From boundary conditions, solve for A3 in terms = ⇒ K1 B1 = K 2 A2
∂x ∂x
of A1 . The boundary conditions are:
x = a: ψ 2 = ψ 3 ⇒
x = 0: ψ 1 = ψ 2 ⇒ A1 + B1 = A2 + B2
A2 sin K2 a + B2 cos K2 a = 0
∂ψ 1 ∂ψ 2 or
= ⇒ K1 A1 − K1 B1 = K 2 A2 − K2 B2
∂x ∂x B2 = − A2 tan K 2 a
x = a: ψ 2 = ψ 3 ⇒ (c)
a f
A2 exp jK2 a + B2 exp − jK2 a a f FG K IJ B
a f K1 B1 = K2 A2 ⇒ A2 =
HK K
1
1
= A3 exp jK3 a 2
∂ψ 2 ∂ψ 3 and since B1 = B2 , then

= ⇒
∂x ∂x FG K IJ B
a f f
K2 A2 exp jK2 a − K2 B2 exp − jK2 a a A2 =
HK K
1
2
= K A expa jK a f
2
3 3 3 From B = − A tan K a , we can write

2
FK I
2 2
But K a = 2 nπ ⇒
expa jK a f = expa − jK a f = 1 B = − G J B tan K a
2
HK K
1
2 2 2
2 2
2
Then, eliminating B1 , A2 , B2 from the above which gives
equations, we have
FK I
1 = − G J tan K a
HK K
2 1
K3 4 K1 4 K1 K 3 2
T=
K1
⋅
aK + K f1 3
2
⇒ T=
aK + K f 1 3
2 2
In turn, this equation can be written as
1= −
V −E O
L 2mE ⋅ aOP
tan M
2.37
(a) Region I: Since VO > E , we can write
E N h Q 2
∂ ψ1
2
−
a
2 m VO − E fψ =0
or
L 2mE ⋅ a OP
= − tan M
1
E
∂x
2 2
h
Region II: V = 0 , so V −E O N h Q 2
∂ ψ2
2
2 mE This last equation is valid only for specific
+ ψ2 = 0 values of the total energy E . The energy levels
∂x
2 2
h are quantized.
Region III: V → ∞ ⇒ ψ 3 = 0
The general solutions can be written, keeping in 2.38
mind that ψ 1 must remain finite for x < 0 , as − mo e
4
a f
ψ 1 = B1 exp + K1 x En =
a 4π ∈ f 2 h n ( J ) 2 2 2
= A sina K x f + B cosa K x f
o
ψ2 3
2 2 2 2
me
=
a4π ∈ f 2h n (eV )
o
ψ3 = 0 2 2 2
where o
a f −b 9.11x10 gb1.6 x10 g

−31 −19 3
2 m VO − E 2 mE
K1 = and K 2 = = ⇒
4π b8.85 x10 g 2b1.054 x10 g n
2 2 −12 2 −34 2 2
h h
−13.58
En = 2
(eV )
n
Then
19
n = 1 ⇒ E1 = −13.58 eV dψ 100 F 1 I F −r I
⋅ G J r expG J
−1
5/ 2
π Ha K Ha K
=
2 2
r
n = 2 ⇒ E 2 = −3.395 eV dr o o
n = 3 ⇒ E 3 = −1.51 eV so that
n = 4 ⇒ E 4 = −0.849 eV d F dψ I
dr H dr K
2 100
r
−1 F 1 I L F −r I F r I F −r I O
5/ 2
⋅ G J M2 r expG J − G J expG J P
2
2.39
π Ha K N H a K H a K H a KQ
We have =
F 1I
F −r I
⋅G J
expG J
1
3/ 2 o
Substituting into the wave equation, we have

o o o
π Ha K
Ha K
ψ =
−1 F 1 I L F −r I r F −r I O
100
5/ 2
⋅ G J M2 r expG J − expG J P
2
o o
r π Ha K N H a K a H a KQ
and 2
1 F 1I F −2r IJ 3 o o o o
P = 4πr ψ ψ = 4πr ⋅ ⋅ G J expG 2m L h O F 1 I F 1I F −r I

π Ha K Ha K
2 * 2 3/ 2
⋅ G J expG J = 0
2
or
100 100
o o
+
h N
M
2
E+o
P
m a rQ H π K Ha K
⋅
o
Ha K
o o o
4 F −2r IJ
⋅ r expG
where
P=
aa f H a K
2
− mo e −h
4 2
3
o
To find the maximum probability

o
E = E1 =
a 4π ∈ f ⋅ 2 h o
2 2
⇒ E1 =
2 mo a o
2
dP(r )
=0 Then the above equation becomes
dr
RSr FG −2 IJ expFG −2r IJ + 2r expFG −2r IJ UV 1 F 1 I L F −r I OR −1 LM2r − r OP
⋅ G J MexpG J P S
3/ 2 2
π H a K N H a K QT r a N
4
a Q
=
aa f T H a K H a K H a KW
2 2
3 o o o o
2m F − h h IU
o o o o
G JV = 0
2 2
which gives
h H 2m a m a rKW
+ o
+
−r
2
0= + 1 ⇒ r = ao o o o o
ao or
1 F 1 I L F −r I O
3/ 2
⋅ G J MexpG J P
or r = a o is the radius that gives the greatest
probability. π H a K N H a KQ
o o
2.40 R −2 + 1 + FG −1 + 2 IJ UV = 0
×S
ψ 100 is independent of θ and φ , so the wave Ta r a H a a r K W o
2
o
2
o o
equation in spherical coordinates reduces to which gives 0 = 0, and shows that ψ 100 is indeed
1 ∂ F
2 ∂ψ 2m I a solution of the wave equation.
r ∂r
2
⋅ r
H
∂r h K
+ 2 o ( E − V (r ))ψ = 0
where 2.41
All elements from Group I column of the
−e −h
2 2
V (r ) = = periodic table. All have one valence electron in

4π ∈o r mo a o r the outer shell.
For
F 1 I F −r I
⋅ G J expG J ⇒
1
3/ 2
π Ha K Ha K
ψ = 100
o o
1 F 1 I F −1I F −r I 3/ 2
⋅ G J G J expG J
dψ
π Ha K Ha K Ha K
= 100
dr o o o
Then
20
Chapter 3
Problem Solutions
d u1 ( x ) du1 ( x )
b g
2
+ 2 jk − k − α u1 ( x ) = 0
2 2
2
3.1 If a o were to increase, the bandgap energy dx dx
would decrease and the material would where
begin to behave less like a semiconductor 2 mE
α =
2
and more like a metal. If a o were to h

2
decrease, the bandgap energy would Q.E.D.

increase and the material would begin to In region II, V ( x ) = VO . Assume the same form
behave more like an insulator.
of the solution
E LM F F I I OP
3.2
Schrodinger’s wave equation
Ψ( x , t ) = u( x ) exp j kx −
h
t
N H H K KQ
−h ∂ Ψ( x , t ) ∂Ψ( x , t ) Substituting into Schrodinger’s wave equation,
2 2
⋅ + V ( x ) ⋅ Ψ( x , t ) = jh we obtain
( jk ) u( x ) exp L j F kx − F I t I O
∂x ∂t
2
2m
−h
2
Let the solution be of the form
LM F F E I tI OP 2m
{ M 2 E
N H H h K K PQ
Ψ( x , t ) = u( x ) exp j kx −
N H H hK K Q ∂u( x ) LM F F E I tI OP
Region I, V ( x ) = 0 , so substituting the proposed
+2 jk
∂x N H H h K KQ
exp j kx −
solution into the wave equation, we obtain ∂ u( x ) LM F F E I tI OPUV

2
−h
2
{ ∂ LM F F E I tI OP +
∂x N H H h K K QW
exp j kx − 2
2m ∂x
⋅
N H H hK K Q
jku( x ) exp j kx −
LM F F E I tI OP
∂u( x ) LM F F E I tI OPUV N H H h K KQ
+V u( x ) exp j kx −
N H H h K K QW
O
+ exp j kx −
∂x
F − jE I ⋅ u( x) expLM jF kx − F E I tI OP LM F F E I tI OP
= jh
HhK N H H h K KQ N H H h K KQ
= Eu( x ) exp j kx −
This equation can be written as

which becomes ∂u( x ) ∂ u( x )
2
( jk ) u( x ) exp L j F kx − F I t I O
− k u( x ) + 2 jk +
2
−h
2
2m
{ 2 E
MN H H h K K PQ ∂x
2 mVO
∂x
2
2 mE
∂u( x ) LM F F E I tI OP − u( x ) = 0 u( x ) +
N H H h K KQ
2 2
+2 jk exp j kx − h h
∂x Setting u( x ) = u2 ( x ) for region II, this equation
∂ u( x ) LM F F E I tI OPUV
2
becomes
+
∂x N H H h K K QW
exp j kx − 2 d u2 ( x )
2
+ 2 jk
du2 ( x )
LM F F E I tI OP dx
2
dx
N H H h K KQ
= + Eu( x ) exp j kx −
− k −α +
F
H
2 2 2 mVO
2
I u ( x) = 0
K 2
This equation can then be written as h
∂u( x ) ∂ u( x )
2
2 mE where
− k u( x ) + 2 jk + + ⋅ u( x ) = 0
2
∂x ∂x h
2 2 2 mE
α =
2
Setting u( x ) = u1 ( x ) for region I, this equation

2
h
becomes Q.E.D.
23
3.3 A+ B−C− D = 0
We have Also
d u1 ( x ) du1 ( x )
b g
2
du1 du
+ 2 jk − k − α u1 ( x ) = 0
2 2
2
= 2
dx dx dx x = 0 dx x = 0
The proposed solution is which yields
u1 ( x ) = A exp j (α − k ) x + B exp − j (α + k ) x (α − k ) A − (α + k ) B − (β − k )C + ( β + k ) D = 0
The first derivative is The third boundary condition is
du1 ( x ) u1 (a ) = u2 ( −b )
= j (α − k ) A exp j (α − k ) x
dx which gives
− j (α + k ) B exp − j (α + k ) x A exp j (α − k )a + B exp − j (α + k )a
and the second derivative becomes = C exp j ( β − k )( −b) + D exp − j ( β + k )( −b)
d u1 ( x )
2
This becomes
= j (α − k ) A exp j (α − k ) x
2
dx
2 A exp j (α − k )a + B exp − j (α + k )a
+ j (α + k ) B exp − j (α + k ) x
2
− C exp − j ( β − k )b − D exp j ( β + k )b = 0
Substituting these equations into the differential The last boundary condition is
equation, we find du1 du
−(α − k ) A exp j (α − k ) x
2 = 2
dx x = a dx x =− b
−(α + k ) B exp − j (α + k ) x which gives
2
+2 jk { j (α − k ) A exp j (α − k ) x j (α − k ) A exp j (α − k )a
− j (α + k ) B exp − j (α + k ) x } − j (α + k ) B exp − j (α + k )a
b
− k − α { A exp j (α − k ) x
2 2
g = j ( β − k )C exp j ( β − k )( −b)
− j ( β + k ) D exp − j ( β + k )( −b)
+ B exp − j (α + k ) x }=0 This becomes
Combining terms, we have (α − k ) A exp j(α − k )a
l−bα − 2αk + k g − 2k (α − k )
2 2
−(α + k ) B exp − j (α + k )a
−b k − α gq A exp j (α − k ) x
2 2
−( β − k )C exp − j ( β − k )b
+m−cα + 2αk + k h + 2 k aα + k f2 2
+( β + k ) D exp j ( β + k )b = 0
−b k − α gq B exp − j (α + k ) x = 0
2 2
We find that 3.5 Computer plot

0=0 Q.E.D.
3.6 Computer plot
For the differential equation in u2 ( x ) and the
proposed solution, the procedure is exactly the 3.7
same as above. sin αa
P′ + cos αa = cos ka
αa
3.4 Let ka = y , αa = x
We have the solutions
Then
u1 ( x ) = A exp j (α − k ) x + B exp − j (α + k ) x
sin x
for 0 < x < a P′ + cos x = cos y
x
u2 ( x ) = C exp j ( β − k ) x + D exp − j ( β + k ) x
for −b < x < 0 d
Consider of this function
The boundary conditions: dy
u1 (0) = u2 (0)
which yields
24
∆E = 2.64 eV
d
dy
{ P ′ ⋅ b xg −1
⋅ sin x + cos x = − sin y } (b)
ka = 2π ⇒ cos ka = +1
We obtain
P′
RS(−1)( x) −2 dx
+ ( x ) cos x
−1 dx UV 1st point: αa = 2π
2nd point: αa = 2.54π
T sin x
dy dy W Then
E 3 = 6.0165 eV
dx
− sin x = − sin y
dy E 4 = 9.704 eV
Then so
dx RS P ′LM −1 sin x + cos x OP − sin xUV = − sin y ∆E = 3.69 eV
dy T N x x Q W
2 (c)
ka = 3π ⇒ cos ka = −1
For y = ka = nπ , n = 0 , 1 , 2 , . . . 1st point: αa = 3π
⇒ sin y = 0 2nd point: αa = 3.44π
So that, in general, then Then
dx d (αa ) dα E 5 = 13.537 eV
=0= =
dy d ( ka ) dk E 6 = 17.799 eV
And so
∆E = 4.26 eV
2 mE dα F I F 2m I dE
1 2 mE
−1/ 2
2 H h K H h K dk
α= 2
⇒ = 2 2
(d)
h dk ka = 4π ⇒ cos ka = +1
This implies that 1st point: αa = 4π
dα dE nπ 2nd point: αa = 4.37π
=0= for k =
dk dk a Then
E 7 = 24.066 eV
3.8 E 8 = 28.724 eV
sin αa so
f (αa ) = 9 + cos αa = cos ka ∆E = 4.66 eV
αa
(a) ka = π ⇒ cos ka = −1
1st point: αa = π : 2nd point: αa = 1.66π 3.9
(2nd point by trial and error) (a) 0 < ka < π
Now For ka = 0 ⇒ cos ka = +1
2 mEF αa I ⋅ h 2 2 By trial and error: 1st point: αa = 0.822π
αa = a
h H a K 2m
2
⇒E= 2nd point: αa = π
From Problem 3.8, E = (αa ) (0.1524 )
2
(eV )
So
(αa ) b1.054 x10 g ⇒
2 −34 2 Then
E1 = 1.0163 eV
b5x10 g 2b9.11x10 g
E= ⋅ 2 −31
−10
E 2 = 1.5041 eV
so
E = (αa ) 2.439 x10 (J)
2 −20
∆E = 0.488 eV
or (b)
E = (αa ) (0.1524 ) (eV ) π < ka < 2π
2
So Using results of Problem 3.8

αa = π ⇒ E1 = 1.504 eV 1st point: αa = 1.66π
2nd point: αa = 2π
αa = 1.66π ⇒ E 2 = 4.145 eV Then
Then
25
E 3 = 4.145 eV (c)
ka = 3π ⇒ cos ka = −1
E 4 = 6.0165 eV
1st point: αa = 3π
so 2nd point: αa = 3.33π
∆E = 187
. eV Then
(c) E 5 = 13.537 eV
2π < ka < 3π
E 6 = 16.679 eV
1st point: αa = 2.54π
2nd point: αa = 3π so
Then ∆E = 3.14 eV
E 5 = 9.704 eV (d)
ka = 4π ⇒ cos ka = +1
E 6 = 13.537 eV
1st point: αa = 4π
so 2nd point: αa = 4.26π
∆E = 3.83 eV Then
(d) E 7 = 24.066 eV
3π < ka < 4π
E 8 = 27.296 eV
2nd point: αa = 4π so
Then ∆E = 3.23 eV
E 7 = 17.799 eV
E8 = 24.066 eV 3.11
Allowed energy bands
so Use results from Problem 3.10.
∆E = 6.27 eV
(a)
0 < ka < π
3.10 1st point: αa = 0.759π (By trial and error)
sin αa 2nd point: αa = π
6 + cos αa = cos ka We have
αa
E = (αa ) (0.1524 ) eV
2
Forbidden energy bands
(a) ka = π ⇒ cos ka = −1 Then
1st point: αa = π E1 = 0.8665 eV
2nd point: αa = 156
. π (By trial and error) E 2 = 1.504 eV
From Problem 3.8, E = (αa ) (0.1524 ) eV
2
so
Then ∆E = 0.638 eV
E1 = 1504
. eV (b)
E 2 = 3.660 eV π < ka < 2π
1st point: αa = 156
. π
so
∆E = 2.16 eV 2nd point: αa = 2π
Then
(b)
E 3 = 3.660 eV
ka = 2π ⇒ cos ka = +1
1st point: αa = 2π E 4 = 6.0165 eV
2nd point: αa = 2.42π so
Then ∆E = 2.36 eV
E 3 = 6.0165 eV (c)
E 4 = 8.809 eV 2π < ka < 3π
so
∆E = 2.79 eV 2nd point: αa = 3π
26
Then so that
E 5 = 8.809 eV a
mp curve A < mp curve B
*
f a *
f
E 6 = 13.537 eV
so 3.15
∆E = 4.73 eV
∂E
(d) Points A, B: < 0 ⇒ velocity in –x direction;
3π < ka < 4π ∂k
1st point: αa = 3.33π ∂E
Points C, D: > 0 ⇒ velocity in +x direction;
2nd point: αa = 4π ∂x
Then
∂ E
2
E 7 = 16.679 eV Points A, D; < 0 ⇒ negative effective

∂k
2
E 8 = 24.066 eV
mass;
so
∂ E
2
∆E = 7.39 eV Points B, C; > 0 ⇒ positive effective
∂k
2
mass;
3.12
T = 100 K ; E g = 1170
. −
b4.73x10 g(100)
−4 2
⇒
3.16
636 + 100 k h
2 2
E − EC =
E g = 1164
. eV 2m
T = 200 K ⇒ E g = 1147
. eV
At k = 0.1 A b g ° −1
⇒
1
k
= 10 A = 10 m
° −9
T = 300 K ⇒ E g = 1125
. eV
So
T = 400 K ⇒ E g = 1.097 eV k = 10 m
+9 −1
T = 500 K ⇒ E g = 1.066 eV For A:
g = b10 g b1.054 x10 g

2 −34 2
b
9
T = 600 K ⇒ E g = 1.032 eV (0.07) 1.6 x10 −19
2m
which yields
3.13 −31
m = 4.96 x10 kg
The effective mass is given by
F 1 d E IJ
m =G ⋅
2 −1 so
m
H h dk K
*
2 2 curve A; = 0.544
mo
We have that
For B:
acurve Af > dk acurve Bf g = b10 gb1.054 x10 g
2 2
d E d E −34 2
b
9
dk
2 2
(0.7) 1.6 x10 −19
so that 2m
*
a f a
m curve A < m curve B
*
f which yields
m = 4.96 x10
−32
kg
so
3.14
The effective mass for a hole is given by m
Curve B: = 0.0544
FG 1 ⋅ d E IJ
2 −1
mo
mp =
H h dk K
*
2 2
3.17
We have that 2 2
k h
acurve Af > dk acurve Bf
2 2
d E d E EV − E =
2 2 2m
dk
27
k = 0.1 A b g * −1
⇒ 10 m
9 −1 2
d E
2
= E1α
2
For Curve A: dk k = kO
g b10 g b1.054 x10 g

2 −34 2
b We have
9
(0.08) 1.6 x10 −19 = 1 1 d E E1α

2 2
2m = ⋅ 2 =
which yields m
* 2
h dk h
2
−31 m or
m = 4.34 x10 kg ⇒ = 0.476 2
mo h
m =
*
E1α
2
For Curve B:
g = b10 g b1.054 x10 g

2 −34 2
b
9
(0.4) 1.6 x10 −19

3.21
2m For the 3-dimensional infinite potential well,
which yields
V ( x ) = 0 when 0 < x < a , 0 < y < a , and
m
m = 8.68 x10
−32
kg ⇒ = 0.0953 0 < z < a . In this region, the wave equation is
mo
∂ ψ ( x , y , z) ∂ ψ ( x , y, z) ∂ ψ ( x , y , z)
2 2 2
+ +
3.18 ∂x
2
∂y
2
∂z
2
(a) E = hν
2 mE
Then ψ ( x , y , z) = 0
+
ν=
E b
(1.42) 1.6 x10 −19 g⇒ h
2
h
=
b6.625x10 g −34
Use separation of variables technique, so let
ψ ( x , y , z ) = X ( x )Y ( y )Z ( z )
ν = 3.43x10 Hz
14
Substituting into the wave equation, we have
∂ X ∂Y ∂ Z
2 2 2
(b)
YZ + XZ + XY
∂x ∂y ∂z
8 2 2 2
c 3 x10 −7
λ= = = 8.75 x10 m
ν 3.43 x10
14
2 mE
+ ⋅ XYZ = 0
or h
2
λ = 0.875 µm Dividing by XYZ , we obtain

1 ∂ X 1 ∂ Y 1 ∂ Z 2 mE
2 2 2
3.19 ⋅ 2 + ⋅ 2 + ⋅ 2 + 2 =0
X ∂x Y ∂y Z ∂z h
(c) Curve A: Effective mass is a constant
Curve B: Effective mass is positive around Let
1 ∂ X ∂ X
2 2
π
⋅ 2 = −kx ⇒ + kx X = 0
2 2
k = 0 , and is negative around k = ± .
X ∂x ∂x
2
2
The solution is of the form
3.20 X ( x ) = A sin k x x + B cos k x x
E = E O − E1 cos α k − k O a f Since ψ ( x , y , z ) = 0 at x = 0 , then X (0) = 0 so
that B ≡ 0 .
dE
dk
a f
= − E1 ( −α ) sin α k − k O a f Also, ψ ( x , y , z ) = 0 at x = a , then X (a ) = 0 so
= + E1α sin α k − k O a f we must have k x a = n x π , where

nx = 1 , 2 , 3 , . .
So
Similarly, we have
a f
2
d E
= E1α cos α k − k O
2
1 ∂Y 1 ∂ Z
2 2
2
⋅ 2 = − k y and ⋅ 2 = −kz
2 2
dk
Then Y ∂y Z ∂z
From the boundary conditions, we find
28
k y a = n y π and k z a = nz π Now
where n y = 1 , 2 , 3 , . . . and nz = 1 , 2 , 3 , . . .
gT =
b g
4π 2 mn
* 3/ 2
z
E C + kT
E − E C ⋅ dE
3
From the wave equation, we have h EC
2 mE
−k x − k y − kz + 2 = 0
2 2 2
b g F 2I aE − E f
4π 2 mn
* 3/ 2
EC + kT
H 3K
3/ 2
h = 3 C
The energy can then be written as h EC
h
b
2
n +n +n g
FπI 2
4π b 2 m g F 2 I
* 3/ 2
E=
H aK
2 2 2
H 3 K (kT )
n 3/ 2
x y z =
2m h
3
Then
3.22 4π 2(0.067 )b9.11x10 g F 2 I
−31 3/ 2
b6.625x10 g H 3K
The total number of quantum states in the 3- g = T 3
dimensional potential well is given (in k-space) −34
by
× (0.0259)b1.6 x10 g
−19 3/ 2
πk dk
2
g T ( k )dk = ⋅a
3
π
3 or
−3 −3
g T = 3.28 x10 m = 3.28 x10 cm
23 17
where
2 mE
k =
2
h
2
3.24
We can then write
1 gV ( E ) =
4π 2 m pb g * 3/ 2
EV − E
k = ⋅ 2 mE h
3
h Now
Taking the differential, we obtain
1 1 1 1 m gT =
b g
4π 2 mp
* 3/ 2
z
EV
EV − E ⋅ dE
dk = ⋅ 2m ⋅ ⋅ ⋅ dE = ⋅ ⋅ dE h
3
h 2 E h 2E E V − kT
Substituting these expressions into the density of b g F −2 I a E − E f

4π 2 m p
* 3/ 2
EV
H 3K
3/ 2
states function, we obtain =
F 2mE I ⋅ 1 ⋅
3 V
h EV − kT
πa
3
m
Hh Kh 4π b 2 m g F 2 I
g T ( E )dE = ⋅ dE * 3/ 2
π
3 2
2E
H 3 K (kT )
p 3/ 2
=
Noting that h
3
4π 2(0.48)b9.11x10 g F 2 I
−31 3/ 2
h
b6.625x10 g H 3K
h= gT = 3
−34
2m
× (0.0259)b1.6 x10 g
this density of states function can be simplified −19 3/ 2
and written as
4πa
3
or
g T ( E )dE = (2 m)3/ 2 ⋅ E ⋅ dE −3 −3
g T = 6.29 x10 m = 6.29 x10 cm
24 18
3
h
3
Dividing by a will yield the density of states,
so that 3.25
g( E ) =
4π (2 m)
3
3/ 2
⋅ E (a) g C ( E ) =
4π 2 mn b g * 3/ 2
E − EC
h h
3
3.23 =
b
4π 2(1.08) 9.11x10 g b1.6x10 g
−31 3/ 2
−19 1/ 2
E − EC
b g
4π 2 mn
* 3/ 2
b6.625x10 −34
g3
gC ( E ) = E − EC −3 −1
= 4.77 x10 E − EC
46
h
3
m J
29
or 1
= ⇒ f ( E ) = 0.269
g C ( E ) = 7.63x10
−3 −1
E − E C cm eV
21
1 + exp(1)
Then (b)
E gC 1
E C + 0.05 eV 1.71x10 cm eV
21 −3 −1
1 − f (E ) = 1 −
LMa E f O
− kT − EV
PQ
1 + exp
N
V
E C + 0.10 eV 2.41x10
21 kT
E C + 0.15 eV 2.96 x10
21 1
= 1− ⇒ 1 − f ( E ) = 0.269
E C + 0.20 eV 3.41x10
21
1 + exp( −1)
(b) gV ( E ) =
4π 2 m p b g * 3/ 2
EV − E
3.30
1
f (E ) =
FE−E I
3
h
=
b
4π 2(0.56) 9.11x10 g b1.6x10 g
−31 3/ 2
−19 1/ 2
EV − E
1 + exp
H kT K F
b6.625x10 −34
g 3
(a) E − E F = kT , f ( E ) =
1
⇒
= 1.78 x10
46
EV − E
−3
m J
−1 1 + exp(1)
f ( E ) = 0.269
gV ( E ) = 2.85x10
−3 −1
EV − E cm eV
21
gV ( E ) 1
E (b) E − E F = 5kT , f ( E ) = ⇒
1 + exp(5)
EV − 0.05 eV 0.637 x10 cm eV
21 −3 −1
f ( E ) = 6.69 x10
−3
EV − 0.10 eV 0.901x10
21
EV − 0.15 eV 21 1
110
. x10 (c) E − E F = 10 kT , f ( E ) = ⇒
EV − 0.20 eV 1.27 x10
21 1 + exp(10)
f ( E ) = 4.54 x10
−5
3.26
gC bm g *
n
3/ 2
gC Fm I
=G J
*
3/ 2 3.31
1
= ⇒
Hm K
n
1 − f (E ) = 1 −
gV bm g * 3/ 2
gV
*
FE−E I
H kT K
p
p
1 + exp F
3.27 or
Computer Plot 1
1 − f (E ) =
F E − EI
3.28
gi ! 10 !
1 + exp
H kT K F
(a) E F − E = kT , 1 − f ( E ) = 0.269
a
N i ! gi − N i ! f =
8 !(10 − 8) !
(b) E F − E = 5kT , 1 − f ( E ) = 6.69 x10
−3
(10)(9)(8 !) (10)(9)
= = ⇒ = 45
(c) E F − E = 10 kT , 1 − f ( E ) = 4.54 x10
−5
(8!)(2 !) (2)(1)
3.29 3.32
1 (a) T = 300 K ⇒ kT = 0.0259 eV
(a) f (E ) =
LM a E f O
+ kT − E C 1 LM −a E − E f OP
N QP f (E ) =
FE−E I ≈ exp
N kT Q
F
1 + exp C
kT 1 + exp
H kT K F
30
E b g
f E 3.34
(a) For 3-Dimensional infinite potential well,
EC
bn + n + n g
−5
hπ
2 2
6.43 x10
E=
2 2 2
E C + (1 2 )kT 3.90 x10

−5
2 ma
2 x y z
E C + kT
E C + ( 3 2 )kT
2.36 x10
−5
−5
=
b1.054 x10 g π bn + n + n g−34 2 2
2 2 2
2b9.11x10 gb10 g
1.43 x10 −31 −9 2 x y z
−5
E C + 2 kT 0.87 x10
= 0.376bn + n + n g eV
2 2 2
x y z
(b) T = 400 K ⇒ kT = 0.03453 For 5 electrons, energy state corresponding to

E f (E ) n x n y nz = 221 = 122 contains both an electron
EC −4 and an empty state, so
E C + (1 2 )kT
7.17 x10
4.35 x10
−4 E F = (0.376) 2 + 2 + 1 ⇒b 2 2 2
g
E C + kT 2.64 x10
−4 E F = 3.384 eV
E C + ( 3 2 )kT
−4
1.60 x10 (b) For 13 electrons, energy state corresponding
E C + 2 kT 0.971x10
−4 to n x n y n z = 323 = 233 contains both an
electron and an empty state, so
b
E F = (0.376) 2 + 3 + 3
2 2 2
g⇒
3.33 E F = 8.272 eV
En =
hnπ
2 2 2
=
b1.054 x10 g n π−34 2 2 2
2b9.11x10 gb10 x10 g

2 2
2 ma −31 −10 3.35
The probability of a state at E1 = E F + ∆E
or
−20 being occupied is
E n = 6.018 x10 n J = 0.376n eV
2 2
For n = 4 ⇒ E 4 = 6.02 eV , a f
f1 E1 =
1
E − EF
=
F
1
∆E I F I
For n = 5 ⇒ E 5 = 9.40 eV .
As a 1st approximation for T > 0 , assume the
1 + exp 1
kT H
1 + exp
kT K H K
probability of n = 5 state being occupied is the The probability of a state at E 2 = E F − ∆E
same as the probability of n = 4 state being being empty is
empty. Then
1 1 a f
1 − f 2 E2 = 1 −
1
E − EF F I
1−
F
E − EF I =
F I E − EF
1 + exp 2
H K
1 + exp 4
H kT K H K
1 + exp 5
kT
kT
F − ∆E I
1 1 1 H kT K exp
⇒
F E − E I 1 + expF E − E I
= = 1−
F − ∆E I 1 + expF − ∆E I
=
1 + exp
H kT K F
H kT K 4 5 F
1 + exp
H kT K H kT K
or or
E 4 + E5
E F − E 4 = E5 − E F ⇒ E F =
2
a f
1 − f 2 E2 =
F + ∆E I
1
Then
6.02 + 9.40
H kT K1 + exp
EF = ⇒ E F = 7.71 eV Hence, we have that

2 f a E f = 1 − f a E f Q.E.D.
1 1 2 2
31
3.36 1
(a) At energy E1 , we want (c) 1 − 0.01 =
F −0.30 I
= 0.99
1 1
1 + exp
H kT K
F E1 − E F I
F I −
E1 − E F Then
exp
H kT K
H kT K = 0.011 + exp
F −0.30I = 1 = 1.0101
1
1 + exp
H kT K 0.99
FE −E I which can be written as
1 + exp
H kT K 1 F
F +0.30I = 1 = 99
This expression can be written as
exp
H kT K 0.0101
FE −E I Then
1 + exp
H kT K − 1 = 0.01
1 F
0.30
= ln( 99) ⇒ kT =
0.30
FE −E I kT ln( 99)
= 0.06529
exp
H kT K 1 F
So
FE −E I T = 756 K
⇒ 1 = (0.01) exp
H kT K 1 F
3.38
or
(a)
E1 = E F + kT ln(100)
1
f (E ) =
Then
F 7.15 − 7.0 I = 0.00304
(b)
E1 = E F + 4.6 kT 1 + exp
H 0.0259 K
or
At E1 = E F + 4.6 kT , 0.304%
a f
f E1 =
1
F E − E I = 1 + expF 4.6kT I
1 (b)
At T = 1000 K ⇒ kT = 0.08633 eV
1 + exp
H kT K 1
H kT K
F
Then
which yields 1
f (E ) =
a f
f E1 = 0.00990 ≈ 0.01 F
7.15 − 7.0
= 0.1496
I
1 + exp
H
0.08633 K
3.37 or 14.96%
(a) E F = 6.25 eV , T = 300 K , At E = 6.50 eV (c)
1
1 f (E ) =
f (E ) =
F I = 6.43 x10
−5
F
6.85 − 7.0
= 0.997
I
1 + exp
H
6.50 − 6.25
0.0259 K
1 + exp
H
0.0259 K
or
or
−3
99.7%
6.43 x10 % (d)
(b) 1
F 950 I At E = E F , f ( E ) = for all temperatures.
T = 950 K ⇒ kT = (0.0259 )
H 300 K 2
or
3.39
kT = 0.0820 eV
For E = E1 ,
Then
1 f (E ) =
1 LM −a E − E f OP
F I ≈ exp
N kT Q
1 F
f (E ) =
F 6.50 − 6.25I = 0.0453
1 + exp
H
E1 − E F
K
1 + exp
H 0.0820 K Then
kT
or 4.53%
32
a f F −0.30 I ⇒ f a E f = 9.3x10 or
H 0.0259 K
−6
f E1 = exp
f ( E ) = 7.88 x10
−18
1
For E = E 2 , E F − E 2 = 112
. − 0.3 = 0.82 eV At E = E 2 ,
1 LM −a E − E f OP = expF −0.4 I
1 − f (E ) = 1 −
F I 1 − f ( E ) = exp
N kT Q H 0.0259 K
F 2
−0.82
H 0.0259 K
1 + exp
or
1 − f ( E ) = 1.96 x10
−7
or
LM F −0.82 I OP
N H 0.0259 K Q
1 − f ( E ) ≈ 1 − 1 − exp
3.41
F −0.82 I ⇒ 1 − f ( E ) = 1.78x10 LM F E − E I OP −1
H 0.0259 K f ( E ) = 1 + exp
H kT K Q
−14
= exp
N
F
(b) so
For E F − E 2 = 0.4 ⇒ E1 − E F = 0.72 eV df ( E ) LM F E − E I OP −2
N H kT K Q
= ( −1) 1 + exp F
At E = E1 , dE
LM −a E − E f OP = expF −0.72 I F 1 I expF E − E I
f ( E ) = exp
N kT Q H 0.0259 K H kT K H kT K
1 F
× F
so or
f ( E ) = 8.45 x10
−13
−1 FE−E I
At E = E 2 , df ( E )
=
kT
exp
H kT K F
LM −a E − E f OP = expF −0.4 I dE LM1 + expF E − E I OP 2
1 − f ( E ) = exp
N kT Q H 0.0259 K N H kT K Q
F 2 F
so (a) T = 0 , For
1 − f ( E ) = 1.96 x10 df
−7
E < E F ⇒ exp( −∞ ) = 0 ⇒ =0
dE
3.40 df
E > E F ⇒ exp( +∞ ) = +∞ ⇒ =0
(a) At E = E1 , dE
LM −a E − E f OP = expF −0.30 I df
f ( E ) = exp
N kT Q H 0.0259 K At E = E F ⇒ → −∞
F
dE
or
f ( E ) = 9.3 x10
−6 3.42
(a) At E = E midgap ,
At E = E 2 , then
1 1
E F − E 2 = 1.42 − 0.3 = 112 f (E ) =
. eV ,
F E − EF I =
FG E IJ
So
LM −a E − E f OP = expF −112. I
1 + exp
H kT K 1 + exp
H 2kT K
g
1 − f ( E ) = exp
N kT Q H 0.0259 K
F 2
Si: E g = 112
. eV ,
or 1
f (E ) =
1 − f ( E ) = 1.66 x10
−19
1 + exp
LM 112. OP
(b)
For E F − E 2 = 0.4 ⇒ E1 − E F = 1.02 eV ,
N 2(0.0259) Q
or
At E = E1 ,
f ( E ) = 4.07 x10
−10
LM −a E − E f OP = expF −1.02 I
f ( E ) = exp
N kT Q H 0.0259 K Ge: E g = 0.66 eV ,
1 F
33
1
f (E ) =
L 0.66 OP
1 + exp M
3.44
a f
At E = E 2 , f E 2 = 0.05
N 2(0.0259) Q So
or 1
f ( E ) = 2.93 x10
−6 0.05 =
F E − EFI
GaAs: E g = 1.42 eV , H
1 + exp 2
kTK
1 Then
f (E ) =
1 + exp
LM 1.42 OP E2 − E F
= ln(19 )
N 2(0.0259) Q kT
a f
By symmetry, at E = E1 , 1 − f E1 = 0.05 ,
or
So
f ( E ) = 1.24 x10
−12
E F − E1
(b) = ln(19 )
Using results of Problem 3.35, the answers to kT
part (b) are exactly the same as those given in Then
part (a). E 2 − E1
= 2 ln(19 )
kT
3.43 (a)
1 At T = 300 K , kT = 0.0259 eV
f ( E ) = 10 =
F 0.55I
−6
E 2 − E1 = ∆E = (0.0259 )(2 ) ln(19 ) ⇒

1 + exp
H kT K ∆E = 0.1525 eV
Then (b)
F I = = 10 ⇒
0.55 1 At T = 500 K , kT = 0.04317 eV
H kT K 10
+6
1 + exp −6
E 2 − E1 = ∆E = ( 0.04317)(2 ) ln(19 ) ⇒
F 0.55I ≈ 10 ⇒ F 0.55I = lnb10 g ∆E = 0.254 eV
H kT K H kT K
+6 6
exp
or
0.55
T = 461K
kT =
b g⇒
ln 10
6
34
Chapter 4
Problem Solutions
4.1
F − E IJ
= N N expG
FG 5.83x10 IJ = F 300I expL− E F 1 − 1 I O
7 2 3
H kT K H 182. x10 K H 200K MN H 0.0259 0.01727 K PQ

2 g
ni C V 2 g
(a) Silicon or
T (° K ) kT (eV ) b g
ni cm
−3
1.026 x10 = 3.375 exp (19.29) E g
11
4 which yields
200 0.01727 7.68 x10
12
E g = 1.25 eV
400 0.03453 2.38 x10
For T = 300 K ,
F −1.25 I
14
600 0.0518 9.74 x10
(b) Germanium (c) GaAs

b5.83x10 g = a N
7 2
CO
f
N VO (300) exp
3
H 0.0259 K
T (° K ) ni cmb g −3
b g
ni cm
−3
or
N CO N VO = 115
29
10
. x10
200 2.16 x10 1.38
14 9
400 8.60 x10 3.28 x10
4.5
LM −a E − E f OP
16 12
600 3.82 x10 5.72 x10
(a) g C f F ∝
N kT Q
E − E C exp F
4.2 LM −a E − E f OP expLM −a E − E f OP
F − E IJ ∝ E − EC
N kT Q N kT Q
C C F
exp
n = N N expG
H kT K
2 g
i C V
Let E − E C ≡ x
b10 g = b2.8x10 gb1.04 x10 gFH 300T IK expFH −kT112. IK

3 Then
12 2 19 19
F −xI
Then
gC f F ∝ x exp
H kT K
F 112. I = b2.912 x10 gF T I 3 Now, to find the maximum value
a f F I
H kT K H 300 K −x
14
exp d gC f F 1 −1/ 2
By trial and error

dx
∝ x exp
2 kT H K
T = 381K 1 F −xI = 0
− ⋅x
H kT K
1/ 2
exp
kT
4.3 This yields
Computer Plot 1/ 2
1 x kT
1/ 2
= ⇒x=
4.4 2x kT 2
FG − E IJ
ni = N CO N VO ⋅ (T ) ⋅ exp
Then the maximum value occurs at
H kT K
2 3 g
kT
E = EC +
2
So
n aT f F T I L F 1 − 1 IJ OP (b)
LM a f OP
3
= G J exp M − E G
2
n aT f H T K
i
2
i
2
1N H kT kT K Q
2
1
g
2 1
a f
gV 1 − f F ∝ EV − E exp
− EF − E
kT N Q
At T2 = 300 K ⇒ kT = 0.0259 eV LM −a E − E f OP expLM −a E − E f OP
∝ − E exp
N kT Q N kT Q
F V V
EV
At T1 = 200 K ⇒ kT = 0.01727 eV
Then Let EV − E ≡ x
37
Then
a fF −xI LM −(1 − 1.2) OP = expLM +0.20 OP

gV 1 − f F ∝
H kT K x exp = exp
N 2(0.0259) Q N 2(0.0259) Q
To find the maximum value
d g a1 − f f
or
d L F −xI O ni ( A)
dx MN H kT K QP = 0
∝V F
x exp = 47.5
dx ni ( B )
Same as part (a). Maximum occurs at
kT
x= = EV − E 4.9
2 Computer Plot
or
kT 4.10
E = EV −
2 Fm I
= kT lnG J
3
*
Hm K
p
E Fi − E midgap *
4 n
4.6
LM −a E − E f OP Silicon: mp = 0.56mO , mn = 1.08mO
* *
a f= E1 − E C
N kT Q
1 C
exp
n E1 E Fi − E midgap = −0.0128 eV
na E f LM −a E − E f OP
E2 − EC
N kT Q Germanium: mp = 0.37mO , mn = 0.55mO
2 C * *
2
exp
where E Fi − E midgap = −0.0077 eV

kT Gallium Arsenide: mp = 0.48mO , mn = 0.067 mO
* *
E1 = E C + 4 kT and E 2 = E C +
2
E Fi − E midgap = +0.038 eV
Then
a f=
n E1 4 kTLM −a E − E f OP
na E f N kT Q
1 2
exp 4.11
2 kT
= kT lnG J
Fm I3
*
Hm K
p
2 (a) E −E
LM F 1 I OP = 2 2 exp(−3.5)
Fi midgap *
4 n
N H 2K Q
= 2 2 exp − 4 − 3 F 1.4 I ⇒
or
= (0.0259 ) ln
4 H 0.62 K
na E f E Fi − E midgap = +0.0158 eV
na E f
1
= 0.0854
(b)
F 0.25I ⇒
2
3
4.7
E Fi − E midgap =
4
(0.0259) ln
H 110. K
Computer Plot E Fi − E midgap = −0.0288 eV
4.8
FG − E IJ 4.12
FG N IJ
H kT K = expLM −b E − E g OP
gA
exp 1
n ( A)
2
( kT ) ln
E Fi − E midgap =
HN K
V
F − E IJ N kT Q
gA gB
i
=
2
expG
n ( B)
2
H kT K
C
F 1.04 x10 IJ = −0.495(kT )

i gB
= ( kT ) lnG
19
1
or 2 H 2.8x10 K 19
n ( A) i
= exp M
L −b E − E g OP gA gB
n ( B) i N 2kT Q
38
T (° K ) kT (eV ) E Fi − E midgap (eV )

z
∞
a E − E f dE
= C1
FE−E I
C
200 0.01727 −0.0085

1 + exp
EC
H kT K F
or
−0.017
LM −a E − E f OPdE
400 0.03453
≈ C z a E − E f exp
∞
600 0.0518 −0.0256
N kT Q
F
nO 1 C
EC
Let
4.13 E − EC
Computer Plot η= so that dE = kT ⋅ dη
kT
We can write
4.14
Let g C ( E ) = K = constant a f a fa f
E − E F = E − EC + EC − E F
Then, Then
LM a f OP
z − EC − E F
∞
nO = g C ( E ) f F ( E )dE nO = C1 exp
kTN Q
EC
× z a E − E f exp
∞
z N kT Q
∞ C
1 C
=K
FE−E I dE EC
EC
H kT K
1 + exp F
or
≈ K z exp
∞ = C1 exp
N kT Q
C F
N kT Q
F
z
∞
EC
Let × ( kT )η exp( −η ) ( kT )dη

E − EF 0
η= so that dE = kT ⋅ dη We find that
z
kT ∞ −η
e
We can write η exp( −η )dη = ( −η − 1) ∞0 = +1
a fa f
E − E F = EC − E F − EC − E
So
0
1
so that
LM a f OP LM a f OP
− E − EF − EC − E F nO = C1 ( kT ) exp
2
⋅ exp( −η )
N kT Q
C F
exp
N kT Q N= exp
kT Q
The integral can then be written as
LM −a E − E f OPz exp(−η)dη ∞
4.16
Fm I
n = K ⋅ kT ⋅ exp
N kT Q
C F
r1
Hm K
O
0 We have =∈r O
*
which becomes aO
LM −a E − E f OP For Germanium, ∈r = 16 , m = 0.55mO
*
n = K ⋅ kT ⋅ exp
N kT Q
C F
O
Then
1 F I
4.15
r1 = (16)
0.55 H K
a O = 29(0.53)
Let g C ( E ) = C1 E − E Ca f for E ≥ E C
so
z
°
∞ r1 = 15.4 A
nO = g C ( E ) f F ( E )dE The ionization energy can be written as
EC
F m IJ FG ∈ IJ (13.6)
E =G
* 2
H m KH ∈ K
O
eV
O S
39
0.55
(13.6) ⇒ E = 0.029 eV LM −a E − E f OP
= nO = N C exp
N kT Q
C F
(16) 2
F −0.90 I
= 2.8 x10 exp
H 0.0259 K
18
4.17
r1 Fm I or
We have
aO
=∈r
Hm K O
*
nO = 2.27 x10 cm
4 −3
For GaAs, ∈r = 131. , m = 0.067 mO

*
Then 4.20
1 F I (a) T = 400 K ⇒ kT = 0.03453 eV
r1 = (131
.)
0.067 H
(0.53)
K F 400 I = 7.24 x10 3/ 2
H 300 K
−3
N = 4.7 x10
17 17
C
cm
or
°
r1 = 104 A Then
The ionization energy is LM −a E − E f OP
n = N exp
N kT Q
C F
FG m IJ FG ∈ IJ (13.6) = 0.067 (13.6)

* 2
O C
E=
H m KH ∈ K
O
(131
.) F −0.25 I
H 0.03453K
2
= 7.24 x10 exp
17
O S
or
E = 0.0053 eV or
−3
nO = 519
14
. x10 cm
4.18 Also
2
b15. x10 g 10 2
F 400 I 3/ 2
ni
H 300 K
−3
= 7 x10 = 1.08 x10 cm
18 19
(a) pO = = ⇒ NV
4
nO 5 x10
−3
and
pO = 4.5 x10 cm , pO > nO ⇒ p-type
15
E F − EV = 1.42 − 0.25 = 117
. eV
(b) Then
FG p IJ −117
. F I
Hn K pO = 1.08 x10 exp
H K
19
E Fi − E F = kT ln O
i
0.03453
F 4.5x10 IJ
= (0.0259 ) lnG
15 or
H 1.5x10 K
−3
pO = 2.08 x10 cm
4
10
(b)
or
E Fi − E F = 0.3266 eV FG N IJ
E C − E F = kT ln
Hn K
C
4.19 F 4.7 x10 IJ

= (0.0259 ) lnG
17
LM −a E − E f OP H 5.19 x10 K 14
pO = N V exp
N kT Q
F V
or E C − E F = 0.176 eV
F −0.22 I
= 1.04 x10 exp
H 0.0259 K Then
19
E F − EV = 1.42 − 0.176 = 1.244 eV

so and
b g FH I
−3
pO = 2.13 x10 cm
15
−1.244
pO = 7 x10 exp
K
18
Assuming 0.0259
E C − E F = 112
. − 0.22 = 0.90 eV or pO = 9.67 x10 cm
−3 −3
Then
40
4.21 nO = 2.03 x10 cm

−3
4
pO = N V exp
N kT Q From (b)
F V
or nO =
ni
2
=
b2.38x10 g 12 2
− E = kT lnG
F N IJ pO 111
. x10
16
Hp K
V
EF V or
O
F 1.04 x10 IJ = 0.24 eV

−3
nO = 510
8
. x10 cm
= (0.0259 ) lnG
19
H 10 K 15
4.23
Then
FE −E I
E C − E F = 112
. − 0.24 = 0.88 eV (a) pO = ni exp
H kT K Fi F
So
LM a fO = b1.8 x10 g exp
F 0.35 I
− EC − E F
H 0.0259 K
6
nO = N C exp
kT N PQ
F −0.88 I or
H 0.0259 K
−3
pO = 1.33 x10 cm
12
= 2.8 x10
19
exp
(b) From Problem 4.1,
or
ni ( 400 K ) = 3.28 x10 cm , kT = 0.03453 eV
9 −3
−3
nO = 4.9 x10 cm
4
Then
FG p IJ
4.22 E Fi − E F = kT ln
Hn K
O
FE −E I
H kT K
i
(a) pO = ni exp
FG 1.33x10 IJ
Fi F
12
= (0.03453) ln
F 0.35 I H 3.28x10 K
9
H 0.0259 K
10
15
. x10 exp
or
or E Fi − E F = 0.207 eV
−3
pO = 111
16
. x10 cm (c) From (a)
(b)
nO =
ni
2
=
b18. x10 g 6 2
From Problem 4.1, ni ( 400 K ) = 2.38 x10 cm

12 −3
12
pO 1.33 x10
F 400I = 0.03453 eV or
H 300K
kT = ( 0.0259 )
nO = 2.44 cm
−3
Then From (b)

E − E = kT lnG J
Fp I b3.28x10 g 9 2
Hn K
O
Fi F
nO = 12
i
1.33 x10
F 111. x10 IJ
= ( 0.03453) lnG
16
or
H 2.38x10 K 12
nO = 8.09 x10 cm
6 −3
or
E Fi − E F = 0.292 eV 4.24
(c) For silicon, T = 300 K , E F = EV
From (a) EV − E F
= 0 ⇒ F1/ 2 (η ′ ) = 0.60
nO =
ni
2
=
b
15
. x10
10
g 2 η′ =
kT
pO 111
. x10
16 We can write
or
41
2
N V F1/ 2 (η ′ ) =
2
b1.04 x10 g(0.60) exp( − x )
LM 1 − x OP
N2 Q
−1/ 2
pO = 0 = Kx
19
π π
or which yields
pO = 7.04 x10 cm
18 −3
1 E − EC 1
x= = ⇒ E = E C + kT
2 kT 2
4.25 For the hole concentration
Silicon, T = 300 K , nO = 5 x10 cm
19 −3 p( E ) = gV ( E ) 1 − f F ( E )
We have From the text, using the Maxwell-Boltzmann
approximation, we can write
nO =
2
π
N C F1/ 2 η F a f b g
4π 2 m p
*
3/ 2
p( E ) =
N kT Q EV − E exp F
3
or h
5 x10 =
19 2
π
b
2.8 x10 F1/ 2 η F
19
g a f or
4π b2 m g LM −a E − E f OP
* 3/ 2
p( E ) =
p
N kT Q
F V
exp
which gives 3
a f
F1/ 2 η F = 158
.
h
E −E LM −a E − E f OP
Then × kT
N kT Q
V V
exp
E − EC kT
η F = 1.3 = F EV − E
kT Define x ′ =
or E F − E C = 1.3)(0.0259 ) ⇒
( kT
Then
E C − E F = −0.034 eV
p( x ′ ) = K ′ x ′ exp( − x ′ )
4.26 To find the maximum of p( E ) → p( x ′ ) , set

For the electron concentration dp( x ′ )
= 0 . Using the results from above, we
n( E ) = g C ( E ) f F ( E ) dx ′
The Boltzmann approximation applies so find the maximum at
n( E ) =
b g
4π 2 mn
* 3/ 2
LM −a E − E f OP E = EV − kT
1
N kT Q E − E C exp F
h
3 2
or
4π b 2 m g LM −a E − E f OP
* 3/ 2 4.27
n( E ) = (a) Silicon: We have
n
N kT Q
C F
LM a fO
exp 3
h − EC − E F
E−E LM −a E − E f OP nO = N C exp
kT N PQ
× kT
N kT Q
C C
exp
We can write
Define
kT
a
EC − E F = EC − Ed + Ed − E F fa f
E − EC For
x= E C − E d = 0.045 eV , E d − E F = 3kT
kT
Then
n( E ) → n( x ) = K x exp( − x )
b g expLMN 0−.00259
nO = 2.8 x10
19.045
−3
OP
Q
To find maximum n( E ) → n( x ) , set = b2.8 x10 g exp( −4.737)
19
dn( x ) LM 1 x exp( − x ) + x ( −1) exp( − x ) OP or

N2 Q
−1/ 2
=0= K
1/ 2
−3
nO = 2.45 x10 cm
17
dx
or We also have
42
LM −a E − E f OP ni
2
b2.4 x10 g 13 2
N kT Q
pO = N V exp F V
nO = = 13
⇒
pO 2.95 x10
Again, we can write
E − E = aE − E f + aE − E f
−3
nO = 1.95 x10 cm
13
F V F a a V
For (b)
E F − E a = 3kT , E a − EV = 0.045 eV Nd − Na FN − Na I 2
nO = +
H K + ni
d 2
Then
g LMN OP 2 2
b
pO = 1.04 x10 exp −3 −
19 0.045
0.0259Q Then
= b1.04 x10 g exp( −4.737)

19 5 x10
15
FG 5x10 IJ + b2.4 x10 g
15 2
2
nO = +
H 2 K
13
or 2
pO = 9.12 x10 cm
16 −3 or
−3
nO ≈ 5 x10 cm
15
(b)
GaAs: Assume E C − E d = 0.0058 eV and
Then ni
2
b2.4 x10 g 13 2
b g LMN OP
−0.0058 pO = = 15
⇒
nO 5 x10
nO = 4.7 x10 exp −3
Q
17
0.0259 −3
pO = 115
11
= b4.7 x10 g exp( −3.224)

17
. x10 cm
or 4.30
−3
nO = 1.87 x10 cm
16
For the donor level
Assume E a − EV = 0.0345 eV nd 1
Then Nd
=
1 F
E − EF I
b g LMN −0.0345 OP 1 + exp d
2 HkT K
pO = 7 x10 exp −3
Q
18
0.0259 1
= b7 x10 g exp( −4.332)
18
=
1 F 0.20 I
or
1 + exp
2 H 0.0259 K
pO = 9.20 x10 cm
16 −3 or
nd −4
= 8.85 x10
4.28 Nd
Computer Plot And
1
fF (E ) =
4.29
FE−E I
(a) Ge:
H kT K
1 + exp F
Na − Nd FN −N I 2
pO = +
H 2 K + ni Now
2
= aE − E f + aE − E f
a d
2 E − EF C C F
Then or
E − E F = kT + 0.245
10
13
FG 10 IJ + b2.4 x10 g
13 2
2
Then
pO = +
H2K
13
1
fF (E ) =
2
0.245 F I⇒
or
pO = 2.95 x10 cm
13 −3
1 + exp 1 +
0.0259 H K
f F ( E ) = 2.87 x10
−5
and
43
4.31
−3
= 5 x10 +
13
b5x10 g + b8.54 x10 g 13 2 13 2
(a) nO = N d = 2 x10 cm
15
or
b15. x10 g
−3
nO = 1.49 x10 cm
14
10 2
2
ni
pO = = ⇒ Also
b8.54 x10 g
15
nO 2 x10 2 13 2
ni
pO = 1125
. x10 cm
5 −3
pO = = 14
⇒
nO 1.49 x10
(b) −3
pO = 4.89 x10 cm
13
−3
pO = N a = 10 cm
16
nO =
2
ni
=
b15. x10 g 10 2
⇒
4.32
−3
(a) nO = N d = 2 x10 cm
16 15
pO 10
nO = 2.25 x10 cm
4 −3
pO =
ni
2
=
b1.8x10 g 6 2
⇒
(c) 15
nO 2 x10
−3
nO = pO = ni = 15
10
. x10 cm −3 −3
pO = 1.62 x10 cm
(d)
T = 400 K ⇒ kT = 0.03453 eV (b)
F 400 I expF −112. I

−3
pO = N a = 10 cm
16
= b2.8 x10 gb1.04 x10 g

3
H 300 K H 0.03453K b1.8x10 g

2 19 19
ni 2 6 2
ni
or nO = = 16
⇒
pO 10
−3
ni = 2.38 x10 cm
12
−4 −3
nO = 3.24 x10 cm
Na F N I +n 2
(c)
pO = +
H2K a 2
i −3
2 nO = pO = ni = 1.8 x10 cm
6
+ b5 x10 g + b 2.38 x10 g

2 2
(d)
= 5 x10
13 13 12
kT = 0.03453 eV
gb7 x10 gFH 400 I expF −1.42 I

or
b
3
300 K H 0.03453K
−3
pO = 1.0 x10 cm ni = 4.7 x10
14 2 17 18
Also
or
nO =
2
ni
=
b2.38x10 g 12 2
⇒
ni = 3.28 x10 cm
9 −3
14
pO 10 Now
−3
pO = N a = 10 cm
14
−3
nO = 5.66 x10 cm
10
(e) and
T = 500 K ⇒ kT = 0.04317 eV 2
ni b3.28x10 g 9 2
gFH 500 I expF −112. I nO = = ⇒

b gb
3
14
pO 10
300 K H 0.04317 K
ni = 2.8 x10
2 19 19
1.04 x10
or nO = 1.08 x10 cm
5 −3
−3
(e)
ni = 8.54 x10 cm
13
kT = 0.04317 eV
gb7 x10 gFH 500 I expF −1.42 I

Now
b
3
Nd FN I 2
ni = 4.7 x10
2 17
300 K
18
H 0.04317 K
nO = +
H2K + ni
d 2
2 or
44
ni = 2.81x10 cm
11 −3 4.34
For T = 450 K
Now
= b2.8 x10 gb1.04 x10 g
F 450 I 3
H 300 K
−3
nO = N d = 10 cm
14 2 19 19
ni
Also
b2.81x10 g 11 2 L −112.
× exp M
OP
N (0.0259)a450 300f Q
2
ni
pO = = 14
⇒
nO 10
or
−3
pO = 7.90 x10 cm
8
−3
ni = 1.72 x10 cm
13
(a)
4.33 N a > N d ⇒ p-type
(a) N a > N d ⇒ p-type (b)
(b) Si:
Na − Nd FN −N I 2
pO = N a − N d = 2.5 x10 − 1x10

H 2 K
13 13
pO = + + ni
a d 2
or 2
1.5 x10 − 8 x10
−3 15 14
pO = 15
13
. x10 cm
=
Then 2
nO =
2
ni
=
b15. x10 g 10 2
⇒ FG 1.5x10 − 8x10 IJ + b1.72 x10 g

15 14 2
2
+
H 2 K
13
13
pO 15
. x10
−3
nO = 1.5 x10 cm
7
or
−3
pO ≈ N a − N d = 7 x10 cm
14
Ge:
Na − Nd F N − N I +n 2 Then
b1.72 x10 g
pO =
H 2 K + a d 2
13 2
2
2
i
ni
nO = = ⇒
F 1.5x10 IJ + FG 15. x10 IJ + b2.4 x10 g
14
2 pO 7 x10
=G
13 13
2
H 2 K H 2 K
13 −3
nO = 4.23 x10 cm
11
(c)
or
−3
Total ionized impurity concentration
pO = 3.26 x10 cm
13
N I = N a + N d = 1.5 x10 + 8 x10

15 14
Then or
nO =
2
ni
=
b2.4 x10 g 13 2
⇒
N I = 2.3 x10 cm
15 −3
13
pO 3.26 x10
−3 4.35
nO = 1.77 x10 cm
13
GaAs: nO =
ni
2
=
b15. x10 g 10 2
⇒
−3 5
pO = 15
. x10 cm
13
pO 2 x10
−3
nO = 1125
15
And . x10 cm
nO =
2
ni
=
b1.8x10 g 6 2
⇒
nO > pO ⇒ n-type
13
pO 15
. x10
−3
nO = 0.216 cm
45
4.36 nO = 1x10 cm
16 −3
F I = 0.01727 eV
200
kT = ( 0.0259 )
H 300 K Then
2
b15. x10 g 10 2
= b4.7 x10 gb 7 x10 g

F 200 I 3
pO =
ni
= ⇒
H 300 K
2 17 18 16
ni nO 10
LM −1.42 OP
−3
pO = 2.25x10 cm
4
× exp
N 0.01727 Q (b)
N a > N d ⇒ p-type
or
pO = N a − N d = 3 x10 − 2 x10
−3 16 15
ni = 1.38 cm
Now or
−3
pO = 2.8 x10 cm
16
nO pO = ni ⇒ 5 pO = ni
2 2 2
or\ Then
pO =
ni
⇒ pO = 0.617 cm
−3
nO =
ni
2
=
b15. x10 g 10 2
⇒
5 pO 2.8 x10
16
And −3
nO = 8.04 x10 cm
3
−3
nO = 5 pO ⇒ nO = 3.09 cm
4.42
4.37
(a) nO < ni ⇒ p-type
Computer Plot
−3
(b) nO = 4.5 x10 cm ⇒ electrons: minority
4
4.38 carrier
Computer Plot
pO =
ni
2
=
b15. x10 g 10 2
⇒
4.39 nO 4.5 x10
4
Computer Plot −3
pO = 5 x10 cm ⇒ holes: majority carrier
15
4.40 (c)
n-type, so majority carrier = electrons pO = N a − N d
Nd F N I +n 2
so
nO = +
H2K d 2
−3
5 x10 = N a − 5 x10 ⇒ N a = 10 cm
15 15 16
i
2
= 10 +
13
b10 g + b2 x10 g
13 2 13 2
Acceptor impurity concentration,
N d = 5 x10 cm
15 −3
Donor impurity
or concentration
−3
nO = 3.24 x10 cm
13
Then
pO =
ni
2
=
b2 x10 g 13 2
⇒
4.43
FG p IJ
E Fi − E F = kT ln
Hn K
13 O
nO 3.24 x10
i
−3
pO = 1.23 x10 cm
13
For Germanium:
4.41
T (° K ) kT (eV ) b g
ni cm
−3
10
(a) N d > N a ⇒ n-type 200 0.01727 2.16 x10
14
400 0.03454 8.6 x10
nO = N d − N a = 2 x10 − 1x10
16 16
16
or 600 0.0518 3.82 x10
46
F N I +n b1.504 x10 g = b4.7 x10 gb7 x10 gFH 300T IK

3
2
Na 2
H2K
14 17 18
−3
p = + and N a = 10 cm
a 2 15
O i
2
L −1.42 OP
× exp M
T (° K ) p bcm g E Fi − E F ( eV ) N (0.0259)aT 300f Q
−3
O
15 By trial and error

200 1.0 x10 0.1855 T ≈ 762 K
15
400 1.49 x10 0.01898
16
600 3.87 x10 0.000674 4.46
Computer Plot
4.44 4.47
FG n IJ Computer Plot
E F − E Fi = kT ln
Hn K
O
i
4.48
For Germanium,
−3 Fm I
= kT lnG J
3
*
T = 300 K ⇒ ni = 2.4 x10 cm

Hm K
13 p
(a) E Fi − E midgap *
4
F N I +n
Nd
2
n
nO =
H2K + 3
d 2
2
i
= (0.0259) ln(10) ⇒
4
E Fi − E midgap = +0.0447 eV
N bcm g n bcm g E F − E Fi ( eV )
−3 −3
d O
(b)
10
14
1.05 x10
14
0.0382 Impurity atoms to be added so
10
16
10
16
0.156 E midgap − E F = 0.45 eV
10
18
10
18
0.2755 (i) p-type, so add acceptor impurities
(ii) E Fi − E F = 0.0447 + 0.45 = 0.4947 eV
F E − E I = 10 expF 0.4947 I
pO = ni exp
H kT K H 0.0259 K
Fi F 5
4.45
Nd FN I 2
or
nO = +
H2K + ni
d 2
−3
pO = N a = 1.97 x10 cm
13
2
Now
ni = 0.05nO 4.49
so LM −a E − E f OP
nO = N d − N a = N C exp
N kT Q
C F
nO = 1.5 x10 +
15
b 1.5 x10
15
g 2
+ (0.05)nO
2
so
which yields
F −0.215I
N d = 5 x10 + 2.8 x10
H 0.0259 K
15 19
exp
−3
nO = 3.0075 x10 cm
15
= 5 x10 + 6.95 x10

15 15
Then
ni = 1504
. x10 cm
14 −3 so
−3
N d = 1.2 x10 cm
16
We have
−Eg FG IJ
ni = N C N V exp
H K
2
4.50
so
kT
(a) pO = N a = N V exp
N kT Q
F V
or
47
exp
LM +a E − E f OP = N
N kT Q N
F V V
=
1.04 x10
7 x10
15
19
b
pO = 1.8 x10 exp
6
g FH 0.00259
.45 I
K⇒
a
−3
pO = 6.32 x10 cm
13
= 1.49 x10
3
Then Now
E F − EV = (0.0259) ln 1.49 x10 b 3
g pO < N a , Donors must be added
or pO = N a − N d ⇒ N d = N a − pO
E F − EV = 0.189 eV so
N d = 10 − 6.32 x10 ⇒
15 13
(b)
If E F − EV = 0.1892 − 0.0259 = 0.1633 eV N d = 9.368 x10 cm
14 −3
Then
−0.1633 F I
N a = 1.04 x10 exp
H K 4.53
19
0.0259
FG N IJ
(a) E F − E Fi = kT ln
Hn K
d
−3
= 1.90 x10 cm
16
i
so that
∆N a = 1.90 x10 − 7 x10 ⇒
16 15 F 2 x10 IJ ⇒
= (0.0259 ) lnG
15
∆N a = 1.2 x10 cm
16 −3 H 15. x10 K 10
E F − E Fi = 0.3056 eV
Acceptor impurities to be added
(b)
4.51 FG N IJ
F N IJ = (0.0259) lnFG 10 IJ E Fi − E F = kT ln
Hn K
a
= kT lnG
15
(a) E F − E Fi
Hn K H 15. x10 K
d i
i
10
F 10 IJ ⇒
= (0.0259 ) lnG
16
or
H 15. x10 K 10
E F − E Fi = 0.2877 eV E Fi − E F = 0.3473 eV
(b) (c)
FG N IJ = 0.2877 eV E F = E Fi
Hn K
a
(d)
i −3
kT = 0.03453 eV , ni = 2.38 x10 cm
12
(c)
For (a), nO = N d = 10 cm
15 −3
FG p IJ
Hn K
O
For (b) i
2
ni b 15
. x10
10
g 2
= (0.03453) ln
FG 10 IJ ⇒ 14
nO =
pO
=
10
15
⇒
H 2.38x10 K 12
nO = 2.25 x10 cm
5 −3
E Fi − E F = 0.1291 eV
(e)
−3
kT = 0.04317 eV , ni = 8.54 x10 cm
13
4.52
FG p IJ FG n IJ
Hn K Hn K
O
E F − E Fi = kT ln O
Fp I
i
= (0.0259 ) lnG J = 0.45 eV

FG 1.49 x10 IJ ⇒ 14
Hn K = ( 0.04317 ) ln
H 8.54 x10 K
O
13
i
Then E F − E Fi = 0.0024 eV
48
4.54 (e)
FG N IJ kT = 0.04317 eV , ni = 2.81x10 cm
11 −3
(a) E F − E Fi = kT ln
Hn K FG n IJ
d
Hn K
i
F 2 x10 IJ ⇒
O
= (0.0259 ) lnG
15
H 1.8x10 K
i
6
= ( 0.04317 ) ln
FG 10 IJ ⇒
14
E F − E Fi = 0.5395 eV H 2.81x10 K 11
(b) E F − E Fi = 0.2536 eV
F N IJ
= kT lnG
E Fi − E F
Hn K
a
i
4.55
F 10 IJ ⇒
= (0.0259 ) lnG
16
p-type
FG p IJ
H 1.8x10 K 6
Hn K
O
i
E Fi − E F = 0.5811 eV
F 5x10 IJ ⇒
= (0.0259 ) lnG
15
(c)
E F = E Fi E Fi − H 15. x10 K
10
(d) E Fi − E F = 0.3294 eV
−3
kT = 0.03453 eV , ni = 3.28 x10 cm
9
F 10 IJ ⇒
= ( 0.03453) lnG
14
E Fi − E F
H 3.28x10 K 9
E Fi − E F = 0.3565 eV
49
(page left blank)
50
Chapter 5
Problem Solutions N d = 4.63 x10 cm
13 −3
(d)
5.1
−3
σ ≈ eµ p pO ⇒
(a) nO = 10 cm
16
and b
0.01 = 1.6 x10
−19
g(480) p O
pO =
ni
2
=
b1.8x10 g 6 2
⇒
or
−3
pO = 1.30 x10 cm = N a − N d = N a − 10
14 15
16
nO 10 or
−4 −3
pO = 3.24 x10 cm N a = 113
. x10 cm
15 −3
(b) Note: For the doping concentrations obtained,

J = eµ n nO Ε the assumed mobility values are valid.
−3
For GaAs doped at N d = 10 cm ,
16
5.3
µ n ≈ 7500 cm / V − s
2
ρL L
Then (a) R = = and σ ≈ eµ n N d
σA
b
J = 1.6 x10
−19
g(7500)b10 g(10) 16
A
−3
For N d = 5 x10 cm , µ n ≈ 1100 cm / V − s
16 2
or Then
J = 120 A / cm
2
0.1
R=
(b) (i) pO = 10 cm , nO = 3.24 x10 cm
16 −3 −4 −3
b −19 16
g
1.6 x10 (1100) 5 x10 (100) 10
−4 2
b g b g
(ii) For GaAs doped at N a = 10 cm ,
16 −3 or
R = 1136
. x10 Ω
4
µ p ≈ 310 cm / V − s
2
Then
J = eµ p p O Ε
V 5
b
= 1.6 x10
−19
g(310)b10 g(10) ⇒ 16 I =
R
=
1136
. x10
4
⇒ I = 0.44 mA
(b)
J = 4.96 A / cm
2
In this case
R = 1136
. x10 Ω
3
5.2
Then
(a) V = IR ⇒ 10 = (0.1R ) ⇒
V 5
R = 100 Ω I = = ⇒ I = 4.4 mA
3
R 1136
. x10
(b)
(c)
L L
R= ⇒σ = ⇒ V
σA RA Ε=
−3
L
10 5
σ =
(100) 10 −3 b g⇒ For (a), Ε =
0.10
= 50 V / cm
σ = 0.01 (Ω − cm)
−1 And
vd = µ n Ε = (1100)(50) or vd = 5.5 x10 cm / s
4
(c)
σ ≈ eµ n N d V 5
For (b), Ε = = = 500 V / cm
or L 0.01
b
0.01 = 1.6 x10
−19
g(1350) N d
And
vd = (1100)(500) ⇒ vd = 5.5 x10 cm / s
5
or
53
Then
5.4 d 10
−4
−11
(a) GaAs: tt = = 6
⇒ t t = 1.33 x10 s
ρL V 10 L vd 7.5 x10
R= = = = 0.5 kΩ = (b)
A I 20 σA
Silicon: For Ε = 50 kV / cm ,
Now
vd = 9.5 x10 cm / s
6
σ ≈ eµ p N a
Then
For N a = 10 cm , µ p ≈ 210 cm / V − s
17 −3 2
−4
d 10 −11
Then tt = = ⇒ t t = 1.05 x10 s
b g(210)b10 g = 3.36 (Ω − cm)
6
−19 −1 vd 9.5 x10
σ = 1.6 x10
17
GaAs, vd = 7 x10 cm / s
6
So
L = RσA = (500)( 3.36)b85x10 g
−8 Then
−4
d 10 −11
or tt = = ⇒ t t = 1.43 x10 s
6
L = 14.3 µm vd 7 x10
(b) Silicon
For N a = 10 cm , µ p ≈ 310 cm / V − s
17 −3 2 5.7
For an intrinsic semiconductor,
Then
b g(310)b10 g = 4.96 (Ω − cm)
σ = 1.6 x10
−19 17 −1 b
σ i = eni µ n + µ p g
(a)
So −3
L = RσA = (500)( 4.96)b85x10 g

For N d = N a = 10 cm ,
14
−8
µ n = 1350 cm / V − s , µ p = 480 cm / V − s
2 2
or
. µm
L = 211 Then
b
σ i = 1.6 x10
−19
gb15. x10 g(1350 + 480)
10
5.5 or
σ i = 4.39 x10 ( Ω − cm)
−6 −1
V 3
(a) Ε = = = 3 V / cm
L 1 (b)
−3
For N d = N a = 10 cm ,
4 18
vd 10
vd = µ n Ε ⇒ µ n = =
Ε 3 µ n ≈ 300 cm / V − s , µ p ≈ 130 cm / V − s
2 2
or
Then
(b)
µ n = 3333 cm / V − s
2
b
σ i = 1.6 x10
−19
gb15. x10 g(300 + 130)10
or
vd = µ n Ε = (800)(3)
σ i = 1.03x10 (Ω − cm)
−6 −1
or
vd = 2.4 x10 cm / s
3
5.8
(a) GaAs
5.6
(a) Silicon: For Ε = 1 kV / cm ,
σ ≈ eµ p pO ⇒ 5 = 1.6 x10 b −19
gµ p
p O
From Figure 5.3, and using trial and error, we

vd = 1.2 x10 cm / s
6
find
Then −3
pO ≈ 1.3x10 cm , µ p ≈ 240 cm / V − s
17 2
−4
d 10 −11
tt = = 6
⇒ t t = 8.33 x10 s Then
vd 1.2 x10
For GaAs, vd = 7.5 x10 cm / s
6
54
nO =
2
ni
=
b18. x10 g 6 2
or nO = 2.49 x10 cm
−5 −3 5.10
pO 1.3 x10
17
(a) (i) Silicon: σ i = eni µ n + µ p b g
(b) Silicon: b
σ i = 1.6 x10
−19
gb15. x10 g(1350 + 480) 10
1 or
σ = ≈ eµ n n O
σ i = 4.39 x10 ( Ω − cm)
−6 −1
ρ
or (ii) Ge:
1 1 b
σ i = 1.6 x10
−19
gb2.4 x10 g(3900 + 1900) 13
nO = =
ρeµ n (8) 1.6 x10 (1350)
−19
b g or
σ i = 2.23x10 (Ω − cm)
−1
or −2
−3
nO = 5.79 x10 cm
14
(iii) GaAs:
and b
σ i = 1.6 x10
−19
gb18. x10 g(8500 + 400) 6
pO =
ni
2
=
b15. x10 g 10 2
⇒ pO = 3.89 x10 cm
5 −3
or
σ i = 2.56 x10 (Ω − cm)
14 −9 −1
nO 5.79 x10
Note: For the doping concentrations obtained in L
part (b), the assumed mobility values are valid. (b) R =
σA
−4
5.9 200 x10
σ i = eni µ n + µ p b g (i) R =
b4.39 x10 gb85x10 g ⇒
−6 −8
Then R = 5.36 x10 Ω

9
−6
10 = 1.6 x10 b −19
g(1000 + 600)n i
200 x10
−4
or
ni ( 300 K ) = 3.91x10 cm
9 −3
(ii) R =
b2.23x10 gb85x10 g ⇒
−2 −8
R = 1.06 x10 Ω
6
Now
FG − E IJ 200 x10
−4
H kT K
g
ni = N C N V exp
2
or
(iii) R =
b2.56x10 gb85x10 g ⇒
−9 −8
F N N IJ = (0.0259) lnLM b10 g OP R = 9.19 x10 Ω

12
19 2
= kT lnG
H n K
C V
Eg 2
i MN b3.91x10 g PQ 9 2
5.11
or 1
(a) ρ = 5 =
E g = 1122
. eV eµ n N d
Now Assume µ n = 1350 cm / V − s
2
ni (500 K ) = 10
2
b g expLMN (0.0259−1122
19 2 . OP
)a500 300f Q
Then
1
= 5.15 x10
26
Nd =
b
1.6 x10 (1350)(5)
−19
⇒
g
or −3
N d = 9.26 x10 cm
14
ni (500 K ) = 2.27 x10 cm

13 −3
(b)
Then T = 200 K → T = −75C
σ i = 1.6 x10 b −19
gb2.27 x10 g(1000 + 600) 13
T = 400 K → T = 125C
From Figure 5.2,
so −3
T = −75C , N d = 10 cm ⇒
15
σ i (500 K ) = 5.81x10 (Ω − cm)

−3 −1
55
µ n ≈ 2500 cm / V − s
2
J = σΕ = eµ n nO Ε
T = 125C , N d = 10 cm ⇒
15 −3
b
= 1.6 x10
−19
g(1000)b10 g(100) 14
µ n ≈ 700 cm / V − s
2 or
J = 1.60 A / cm
2
−3
Assuming nO = N d = 9.26 x10 cm over the
14
temperature range, (b)

For T = 200 K , A 5% increase is due to a 5% increase in electron
concentration. So
1
ρ=
b
1.6 x10 (2500) 9.26 x10
−19
⇒
g b g F N I +n Nd
2
H2K
14
nO = 1.05 x10 = +
14 d 2
i
ρ = 2.7 Ω − cm 2
We can write
For T = 400 K ,
ρ=
1 b1.05x10 − 5x10 g = b5x10 g + n
14 13 2 13 2 2
i
b1.6x10 g(700)b9.26x10 g ⇒
−19 14 so
ni = 5.25 x10
2 26
ρ = 9.64 Ω − cm
= b2 x10 gb1x10 g
F T I expFG − E IJ 3
H 300K H kT K
19 19 g
5.12
Computer plot which yields
F T I expF −110. I 3
5.13
H 300K H kT K
−12
2.625 x10 =
(a) Ε = 10 V / cm ⇒ vd = µ n Ε
By trial and error, we find
vd = (1350)(10) ⇒ vd = 1.35 x10 cm / s
4
T = 456 K
so
T=
1
2
mn vd =
* 2 1
2
b
(1.08) 9.11x10 −31 1.35x102 gb g 2 5.15
ni
2
or (a) σ = eµ n nO + eµ p pO and nO =
−27 −8
pO
T = 8.97 x10 J ⇒ 5.6 x10 eV
Then
(b)
eµ n ni
2
Ε = 1 kV / cm , σ = + eµ p p O
pO
vd = (1350)(1000) = 1.35 x10 cm / s
6
To find the minimum conductivity,

Then
dσ ( −1)eµ n ni2
2
1
T = (1.08) 9.11x10
−31
b
1.35 x10
4 2
gb g dpO
=0=
pO
2
+ eµ p ⇒
or which yields
T = 8.97 x10
−23
J ⇒ 5.6 x10 eV
−4
Fµ I
=nG J
1/ 2
Hµ K
n
pO i
(Answer to part (b))
p
5.14
= N N expG
F − E IJ Substituting into the conductivity expression
H kT K eµ n ni
b g
2 g 2
(a) ni 1/ 2
C V
σ = σ min = + eµ p ni µ n µ p
F −110. I b
ni µ n µ p g 1/ 2
= b 2 x10 gb1x10 g exp

H 0.0259 K
19 19
which simplifies to
−3 σ min = 2eni µ n µ p
= 7.18 x10 ⇒ ni = 8.47 x10 cm
19 9
−3 −3 The intrinsic conductivity is defined as

For N d = 10 cm >> ni ⇒ nO = 10 cm
14 14
Then
56
b
σ i = eni µ n + µ p ⇒ eni = g σi
µn + µ p
(a)
At T = 200 K , µ n = (1300)(1837
. )⇒
µ n = 2388 cm / V − s
2
The minimum conductivity can then be written
as (b)
2σ i µnµ p At T = 400 K , µ n = (1300)(0.65) ⇒
σ min =
µ n = 844 cm / V − s
2
µn + µ p
5.16 5.19
1 1 1 1 1 1
σ = eµ ni = = + = + = 0.006
ρ µ µ1 µ2 250 500
Now Then
F − E IJ
expG
µ = 167 cm / V − s
2
H 2kT K
g
1ρ 1 50 5
= = = 0.10 =
F − E IJ
1 1
5.20
expG
1ρ 15 50
H 2kT K Computer plot
2 g
or 5.21
L F 1 − 1 IJ OP
0.10 = exp M − E G
Computer plot
N H 2kT 2kT K Q g
1 2 5.22
kT = 0.0259 dn FG 5x10 − n(0)IJ 14
F 330 I = 0.02849
1
J n = eDn
dx
= eDn
H 0.01 − 0 K
kT = (0.0259 )
H 300 K
g(25)FGH 5x100.010− n(0)IJK
2
b
14
−19
1 1 0.19 = 1.6 x10
= 19.305 , = 17.550
2 kT1 2 kT2
Then
Then (0.19)(0.010)
E g (19.305 − 17.550) = ln(10) − n(0)
b1.6x10 g(25) = 5x10
14
−19
or
which yields
E g = 1.312 eV
n(0) = 0.25 x10 cm
14 −3
5.17
5.23
1 1 1 1
= + + dn ∆n
µ µ1 µ2 µ3 J = eDn = eDn
dx ∆x
g(25)FGH 100 −−0.1010 IJK

1 1 1
b
16 15
= + + −19
2000 1500 500 = 1.6 x10
= 0.00050 + 0.000667 + 0.0020
or or
J = 0.36 A / cm
2
µ = 316 cm / V − s
2
For A = 0.05 cm
2
5.18 I = AJ = (0.05)(0.36) ⇒ I = 18 mA
F I T
−3 / 2
F I 300
+3 / 2
µ n = (1300)
H 300 K = (1300)
HTK
57
5.24 5.27
dn ∆n dp d LM10 expF − x I OP
J n = eDn = eDn J p = − eD p = − eD p
dp N H 22.5K Q
15
dx ∆x dx
so −4
Distance x is in µm , so 22.5 → 22.5x10 cm .
b gD FGH 100 −−4 x610x10 IJK
17 16
−400 = 1.6 x10

−19 Then
b gFH I F I
n −4
−1 −x
J p = − eD p 10
K H K
15
exp
or 22.5 x10
−4
22.5
+b1.6 x10 g(48)b10 g
−400 = Dn ( −16) −19
F −x I 15
Then
Dn = 25 cm / s
2
=
22.5 x10
exp
H 22.5K−4
or
F − x I A / cm
J = 3.41 exp
H 22.5K
2
5.25 p
dp
J = − eD p
dx
LM10 F1 − x I OP = −eD FG −10 IJ
d
16
5.28
= − eD
dx N H LK Q H L K dn
16
p p J n = eµ n nΕ + eDn
dx
b1.6x10 g(10)b10 g
−19 16
or
or
=
10 x10
−4
b
−40 = 1.6 x10 g(960)LMN10 expFH −18x IK OPQΕ
−19 16
J = 16 A / cm = constant at all three points

2
b
+ 1.6 x10
−19
g(25)b10 gFH 18x−101 IK expFH −18x IK
16
−4
5.26 Then
dp LM F − x I OPΕ − 22.2 expF − x I
J p ( x = 0) = − eD p
dx
x =0
.
N H 18 K Q
−40 = 1536 exp
H 18 K
10
15
b1.6x10 g(10)b10 g
−19 15 Then
F − x I − 40
= − eD p
b− L g p
=
5 x10
−4
22.2 exp
H 18 K ⇒
or Ε=
F −xI
J p ( x = 0) = 3.2 A / cm
2 1536
. exp
H 18 K
Now
F +xI
J n ( x = 0) = eDn
dn
dx
x=0
Ε = 14.5 − 26 exp
H 18 K
FG 5x10 IJ = b1.6x10 g(25)b5x10 g
14 −19 14
5.29
= eDn
H L K n
10
−3
J T = J n , drf + J p , dif
or dp
(a) J p , dif = − eD p and
J n ( x = 0) = 2 A / cm
2
dx
Then
F I where L = 12 µm
−x
J = J p ( x = 0) + J n ( x = 0) = 3.2 + 2 p( x ) = 10 exp
H LK
15
or so
J = 5.2 A / cm
2
= − eD b10 g
F −1I expF − x I
H LK H L K
15
J p , dif p
or
58
b1.6x10 g(12)b10 g expF − x I b gLMN A + B expFH −dx IK OPQ

−19 15
−14
J p , dif =
12 x10
−4
H 12 K 100 = 1.54 x10
or b3.31x10 g B expF − x I
−17
F − x I A / cm −
HdK
= +1.6 exp
H LK d
2
J p , dif
This equation is valid for all x , so
(b) 100 = 154
. x10
−14
A
J n , drf = J T − J p , dif or
A = 6.5 x10
15
or
F −xI Also
F −xI
J n , drf = 4.8 − 1.6 exp
H LK 154
. x10
−14
B exp
HdK
(c)
J n , drf = eµ n nO Ε b3.31x10 g B expF − x I = 0
−17
Then
−
d HdK
b1.6x10 g(1000)b10 gΕ
−19 16
which yields
F −xI
−3
d = 2.15 x10 cm
= 4.8 − 1.6 exp
H LK At x = 0 , eµ n n( 0)Ε = 50
which yields so that
LM F − x I OP V / cm b
50 = 1.6 x10
−19
g(8000)(12)( A + B)
N
Ε = 3 − 1 × exp
H L KQ which yields B = −3.24 x10
15
Then
5.30 F −xI
n( x ) = 6.5 x10 − 3.24 x10 exp
HdK
15 15 −3
cm
dn( x )
(a) J = eµ n n( x )Ε + eDn
dx (b)
At x = 0, n(0) = 6.5 x10 − 3.24 x10
15 15
Now µ n = 8000 cm / V − s so that
2
Dn = ( 0.0259 )(8000) = 207 cm / s

2 Or
n(0) = 3.26 x10 cm
15 −3
Then
b
100 = 1.6 x10
−19
g(8000)(12)n( x) At x = 50 µm ,
+b1.6 x10 g(207 )

dn( x ) F −50I
n(50) = 6.5 x10 − 3.24 x10 exp
H 215. K
15 15
−19
dx
which yields or
n(50) = 6.18 x10 cm
−3
dn( x )
15
. x10 n( x ) + 3.31x10
−14 −17
100 = 154
dx (c)
Solution is of the form At x = 50 µm , J drt = eµ n n(50)Ε
−x F I b
= 1.6 x10
−19
g(8000)b6.18x10 g(12) 15
n( x ) = A + B exp
d H K or
so that J drf ( x = 50) = 94.9 A / cm
2
dn( x ) − B −x F I
dx
=
d
exp
d H K Then
J dif ( x = 50) = 100 − 94.9 ⇒
Substituting into the differential equation, we
have J dif ( x = 50) = 51
2
. A / cm
59
or
5.31
F I F x − 1I Ε + 41.44
n = ni exp
H
E F − E Fi
K
80 = 1.6
HL K
kT Solving for the electric field, we find
(a) E F − E Fi = ax + b , b = 0.4 38.56
0.15 = a 10 b g + 0.4 so that a = −2.5x10
−3 2
Ε=
x F I
Then L
−1
H K
E F − E Fi = 0.4 − 2.5 x10 x
2
(b)
For J n = −20 A / cm
2
So
FG 0.4 − 2.5x10 x IJ 2
F x − 1I Ε + 41.44
n = ni exp
H kT K 20 = 1.6
HL K
(b) Then
dn 21.44
J n = eDn Ε=
F1 − x I
dx
FG −2.5x10 IJ expFG 0.4 − 2.5x10 x IJ
2 2
H LK
= eDn ni
H kT K H kT K 5.33
Assume T = 300 K , kT = 0.0259 eV , and
dn
−3 (a) J = eµ n nΕ + eDn
ni = 1.5 x10 cm
10
dx
Then Let n = N d = N do exp( −αx ) , J = 0
Jn =
b
− 1.6 x10
−19
g(25)b1.5x10 gb2.5x10 g 10 2
Then
(0.0259) 0 = µ n N do exp( −αx ) Ε + Dn N do ( −α ) exp( −αx )
FG 0.4 − 2.5x10 x IJ 2 or
H 0.0259 K
× exp D
0 = Ε + n ( −α )
µn
or
F 0.4 − 2.5x10 x IJ
expG
2
Since
Dn
=
kT
H 0.0259 K
−4
J n = −5.79 x10 µn e
So
(i) At x = 0 , J n = −2.95x10 A / cm
3 2
F kT I
(ii) At x = 5 µm , J n = −23.7 A / cm
2
Ε =α
H eK
(b)
5.32
V = − z Εdx = −α
1/ α
F kT I z dx 1/ α
(a) J n = eµ n nΕ + eDn
dn
0
HeK 0
dx
LM F kT I OP ⋅ F 1 I so that V = −F kT I
b
−80 = 1.6 x10
−19
g(1000)b10 gFH1 − Lx IK Ε
16
=− α
N H e KQ HαK HeK
+b1.6 x10 g(25.9 )G
F −10 IJ 16
5.34
H LK
−19
From Example 5.5
where L = 10 x10
−4
= 10 cm
−3 b g = (0.0259)b10 g
(0.0259) 1019 3
We find
Ε = x
b10 − 10 xg b1 − 10 xg
16 19 3
F x I Ε − 41.44 V = − z Ε dx = −( 0.0259 )b10 g z

10 −4 10 −4
−80 = 1.6Ε − 1.6
H 10 K −3
0
x
dx
b1 − 10 xg
3
0
3
60
= −(0.0259 ) 10 b gFH 10−1 IK ln 1 − 10 x

3
3
3 10 −4
0
(b)
0 = J drf + J dif
= (0.0259 ) ln(1 − 0.1) − ln(1) Now

or J drf = eµ n nΕ
V = −2.73 mV
b
= 1.6 x10 g(6000)b5x10 gLMNexpFH −Lx IK OPQΕ
−19 16
5.35
F −xI
From Equation [5.40]
F kT I FG 1 IJ ⋅ dN ( x)
= 48Ε exp
H LK
H e K H N ( x)K dx
Εx = −
d
d
We have
J drf = − J dif
Now so
F 1 IJ ⋅ dN ( x)
1000 = −(0.0259 )G F − x I = 1.24 x10 expF − x I
H N ( x)K dx H LK H LK
d
48Ε exp
5
or which yields
dN d ( x ) Ε = 2.58 x10 V / cm
3
+ 3.86 x10 N d ( x ) = 0
4
dx
Solution is of the form 5.37
N d ( x ) = A exp( −αx ) Computer Plot
and
dN d ( x ) 5.38
= − Aα exp( −αx )
F kT I = (925)(0.0259)
dx
Substituting into the differential equation
(a) D = µ
H eK
− Aα exp( −αx ) + 3.86 x10 A exp( −αx ) = 0 so
4
D = 23.96 cm / s
2
which yields
−1
α = 3.86 x10 cm
4
(b)
For D = 28.3 cm / s
2
At x = 0 , the actual value of N d (0) is arbitrary.
28.3
µ= ⇒ µ = 1093 cm / V − s
2
5.36 0.0259
(a) J n = J drf + J dif = 0
dn dN d ( x ) 5.39
J dif = eDn = eDn We have L = 10 cm = 10 m ,
−1 −3
dx dx
eDn F I −x
−2 −4
W = 10 cm = 10 m , d = 10 cm = 10 m
−3 −5
=
(− L)
⋅ N do exp
H LK (a)
We have
We have
F kT I = (6000)(0.0259) = 155.4 cm / s
HeK
−3 −3 −3
p = 10 cm = 10 m , I x = 1 mA = 10
16 22
Dn = µ n
2
A
Then
Then
−b1.6 x10 g(155.4 )b5 x10 g
I x Bz b10 gb3.5x10 g
−3 −2
−19
F −xI 16
VH = =
b1.6x10 gb10 gb10 g
H LK
−19 22 −5
J dif =
b0.1x10 g exp−4
or
epd
or VH = 2.19 mV
F − x I A / cm
J = −1.24 x10 exp
H LK
5 2
dif
61
(b) 5.42
EH =
VH
=
2.19 x10
−2
−3
(a) VH = E H W = − 16.5x10 b −3
gb5x10 g −2
W 10 or
or VH = −0.825 mV
E H = 0.219 V / cm (b)
VH = negative ⇒ n-type
5.40 (c)
− I x Bz b
gb5x10 g
− 250 x10
−6 −2
n=
− I x Bz
(a) VH =
ned
=
b5x10 gb1.6x10 gb5x10 g
21 −19 −5
edVH
or b
− 0.5 x10 gb6.5x10 g
−3 −2
(b)
VH = −0.3125 mV =
b1.6x10 −19
gb5x10 gb−0.825x10 g
−5 −3
or
−3
VH −0.3125 x10 n = 4.92 x10 m = 4.92 x10 cm
21 −3 15 −3
EH = = −2
⇒
W 2 x10 (d)
−2
E H = −1.56 x10 V / cm Ix L
µn =
(c) enVxWd
µn =
Ix L
b0.5x10 gb0.5x10 g−3 −2
enVxWd
b gb g
250 x10
−6
10
−3
=
b1.6x10 −19
gb4.92 x10 g(1.25)b5x10 gb5x10 g
21 −4 −5
or
=
b1.6x10 −19
gb5x10 g(0.1)b2 x10 gb5x10 g
21 −4 −5
µ n = 0.102 m / V − s = 1020 cm / V − s
2 2
or
µ n = 0.3125 m / V − s = 3125 cm / V − s
2 2
5.43
(a) VH = negative ⇒ n-type
5.41 − I x Bz −3
(b) n = ⇒ n = 8.68 x10 cm
14
(a) VH = positive ⇒ p-type
edVH
(b)
Ix L
I B I B (c) µ n = ⇒ µ n = 8182 cm / V − s
2
VH = x z ⇒ p = x z enVxWd
epd eVH d
b0.75x10 gb10 g −3 −1
(d) σ =
1
= eµ n n = 1.6 x10 b −19
g(8182)(8.68x10 ) 14
=
b1.6x10 gb5.8x10 gb10 g
−19 −3 −5
ρ
or ρ = 0.88 (Ω − cm)
or
−3 −3
p = 8.08 x10 m = 8.08 x10 cm
21 15
(c)
Ix L
µp =
epVxWd
b0.75x10 gb10 g −3 −3
=
b1.6x10 −19
gb8.08x10 g(15)b10 gb10 g 21 −4 −5
or
−2
µ p = 3.87 x10 m / V − s = 387 cm / V − s
2 2
62
Chapter 6
Problem Solutions 4
2.25 x10 −3 −1
G= ⇒ G = 1125
9
6.1 −6
. x10 cm s
20 x10
n-type semiconductor, low-injection so that
(c)
δp
13
5 x10 R = G = 1125
. x10 cm s
9 −3 −1
R′ = = −6
τ pO 10
or 6.4
R ′ = 5 x10 cm s
19 −3 −1
(a) E = hν =
hc
=
b6.625x10 gb3x10 g
−34 8
−10
λ 6300 x10
6.2 or
nO E = 3.15 x10
−19
J This is the energy of 1
(a) RnO =
τ nO photon.
and Now
nO =
ni
2
=
b10 g 10 2
= 10 cm
4 −3
1 W = 1 J / s ⇒ 3.17 x10
18
photons/s
Volume = (1)(0.1) = 0.1 cm
+3
16
pO 10
Then
Then
18
4 317
. x10
10 −3 −1 g= ⇒
RnO = ⇒ RnO = 5 x10 cm s
10
−7 0.1
2 x10
g = 3.17 x10 e − h pairs / cm − s
19 3
(b)
δn
12
10 (b)
b gb10x10 g
−3 −1
Rn = = or Rn = 5 x10 cm s
18
−6
δn = δp = gτ = 317
19
τ nO 2 x10
−7
. x10
so or
−3
δn = δp = 3.17 x10 cm
14
∆Rn = Rn − RnO = 5 x10 − 5 x10 ⇒
18 10
−3 −1
∆Rn ≈ 5 x10 cm s
18
6.5
We have
6.3
∂p p
(a) Recombination rates are equal +
= −∇ • Fp + g p −
nO p ∂t τp
= O
τ nO τ pO and
−3
J p = eµ p pΕ − eD p ∇p
nO = N d = 10 cm
16
The hole particle current density is
pO =
ni
2
=
b15. x10 g 10 2
= 2.25 x10 cm
4 −3 +
Fp =
Jp
= µ p pΕ − D p ∇p
nO 10
16
( + e)
So Now
∇ • Fp = µ p ∇ • ( pΕ ) − Dp ∇ • ∇p
16 4 +
10 2.25 x10
= −6
τ nO 20 x10 We can write
or ∇ • ( pΕ ) = Ε • ∇p + p∇ • Ε
τ nO = 8.89 x10 s
+6 and
∇ • ∇p = ∇ p
2
(b) Generation Rate = Recombination Rate
So so
65
By charge neutrality
∇ • Fp = µ p (Ε • ∇p + p∇ • Ε ) − Dp ∇ p
+ 2
δn = δp ≡ δn ⇒ ∇(δn) = ∇(δp)
Then ∂(δn ) ∂(δp )
and ∇ (δn ) = ∇ (δp ) and =
2 2
∂p p ∂t ∂t
= − µ p (Ε • ∇p + p∇ • Ε ) + D p ∇ p + g p −
2
∂t τp Also
p n
We can then write gn = g p ≡ g , = ≡R
Dp ∇ p − µ p (Ε • ∇p + p∇ • Ε )
2 τp τn
Then we can write
p ∂p
+gp − = (1) Dp ∇ (δn) − µ p Ε • ∇(δn) + p∇ • Ε
2
τp ∂t
∂(δn )
+g − R =
6.6 ∂t
From Equation [6.18] and
(2) Dn ∇ (δn ) + µ n Ε • ∇(δn ) + n∇ • Ε
2
∂p + p
= −∇ • Fp + g p −
∂t τp ∂(δn )
+g − R =
∂p ∂t
For steady-state, =0 Multiply Equation (1) by µ n n and Equation (2)
∂t
Then by µ p p , and then add the two equations.
+
0 = −∇ • Fp + g p − R p We find
and for a one-dimensional case, bµ nD + µ pD g∇ (δn)
n p p n
2
+ µ n µ p ( p − n )Ε • ∇(δn )
+
dFp
= g p − R p = 10 − 2 x10 ⇒
20 19
dx
dFp
+
−3 −1
b g
+ µ n n + µ p p ( g − R) = µ n n + µ p p b g ∂(∂δtn)
= 8 x10 cm s
b g
19
dx Divide by µ n n + µ p p , then
FG µ nD + µ pD IJ ∇ (δn)
H µ n+µ p K
n p p n 2
6.7
From Equation [6.18], n p
0=−
dFp
+
+ 0 − 2 x10
19 L µ µ ( p − n) OPΕ • ∇(δn)
+M
n p
or
dx
N µ n+µ p Q n p
∂(δn )
+( g − R ) =
+
dFp −3 −1
= −2 x10 cm s
19
∂t
dx Define
µ n nD p + µ p pDn Dn Dp (n + p )
6.8 D′ = =
We have the continuity equations µ nn + µ p p Dn n + D p p
(1) Dp ∇ (δp) − µ p Ε • ∇(δp) + p∇ • Ε
2
µ n µ p ( p − n)
and µ ′ =
p ∂(δp ) µ nn + µ p p
+ gp − =
τp ∂t Then we have
∂(δn )
and D ′∇ (δn ) + µ ′Ε • ∇(δn ) + ( g − R ) =
2
(2) Dn ∇ (δn ) + µ n Ε • ∇(δn ) + n∇ • Ε

2 ∂t
Q.E.D.
n ∂(δn )
+ gn − =
τn ∂t
66
6.9 Then
For Ge: T = 300 K , ni = 2.4 x10 cm
13 −3
a a f
σ = eµ n nO + δp + eµ p pO + δp f
Nd F N I +n 2 or
σ = eµ n + eµ p + eb µ + µ g(δp)
n= +
H2Kd 2
i n O p O n p
2
so
= 10 +
13
b10 g + b2.4 x10 g
13 2 13 2
∆σ = eb µ + µ g(δp) n p
or In steady-state, δp = g ′τ
−3
n = 3.6 x10 cm
13
So that
Also b
∆σ = e µ n + µ p g ′τ pO gb g
p=
2
ni
=
b2.4 x10 g 13 2
= 1.6 x10 cm
13 −3
13
n 3.6 x10 6.11
We have n-type, so that minority carriers are holes.
µ n = 3900 , µ p = 1900 Uniform generation throughout the sample
means we have
Dn = 101 , D p = 49.2
δp ∂(δp )
Now g′ − =
τ pO ∂t
Dn D p (n + p )
D′ = Homogeneous solution is of the form
Dn n + Dp p
FG −t IJ
b g
(101)(49.2) 3.6 x1013 + 1.6 x1013 (δp) H = A exp
Hτ K
(101)b3.6 x10 g + (49.2)b1.6 x10 g
= 13 13
pO
and the particular solution is

or (δp) P = g ′τ pO
D ′ = 58.4 cm / s
2
so that the total solution is
Also
(δp) = g ′τ pO + A exp
FG −t IJ
µ′ =
µ n µ p ( p − n) Hτ K pO
µ nn + µ p p At t = 0 , δp = 0 so that
b g
(3900)(1900) 1.6 x1013 − 3.6 x1013 0 = g ′τ pO + A ⇒ A = − g ′τ pO
(3900)b3.6 x10 g + (1900)b1.6 x10 g
= 13 13 Then
or
δp = g ′τ pO 1 − exp
LM
FG −t IJ OP
µ ′ = −868 cm / V − s
2
Hτ KQ
N pO
Now The conductivity is

n p 3.6 x10
13
1.6 x10
13
σ = eµ n + eµ p + eb µ + µ g(δp)
n O p O n p
= ⇒ =
τn τp τn 24 µs ≈ eµ n + eb µ + µ g(δp)
n O n p
which yields so
τ n = 54 µs σ = b1.6 x10 g(1000)b5x10 g
−19 16
+b1.6 x10 g(1000 + 420)b5 x10 gb10 g

−19 21 −7
6.10
σ = eµ n n + eµ p p L F −t IJ OP
× M1 − expG
With excess carriers present
n = nO + δn and p = pO + δp
N Hτ KQ pO
Then
For an n-type semiconductor, we can write
δn = δp ≡ δp
67
σ = 8 + 0.114 1 − exp
LM FG −t IJ OP 6.14
N Hτ KQ pO
(a) p-type GaAs,
Dn ∇ (δn ) + µ n Ε • ∇(δn ) + g ′ −
2 δn
=
∂(δn )
where τ pO = 10
−7
s τ nO ∂t
Uniform generation rate, so that
∇(δn ) = ∇ (δn ) = 0 , then
2
6.12
n-type GaAs: δn ∂(δn )
b
∆σ = e µ n + µ p (δp) g g′ −
τ nO ∂t
=
In steady-state, δp = g ′τ pO . Then The solution is of the form

b
∆σ = 1.6 x10
−19
g(8500 + 400)b2 x10 gb2 x10 g 21 −7 δn = g ′τ nO 1 − exp − t τ nO a f
Now
or
∆σ = 0.57 (Ω − cm)
−1
Rn′ =
δn
τ nO
= g ′ 1 − exp − t τ nO a f
The steady-state excess carrier recombination
rate (b)
−3
Maximum value at steady-state, nO = 10 cm
14
R ′ = g ′ = 2 x10 cm s
21 −3 −1
So
6.13 (δn)O 10
14
(δn)O = g ′τ nO ⇒ τ nO = =
For t < 0 , steady-state, so g′ 10
20
δp(0) = g ′τ pO = 5x10 3x10 ⇒

21 −7
b gb g or
−6
δp(0) = 1.5x10 cm
15 −3 τ nO = 10 s
Now (c)
bg
σ = eµ n nO + e µ n + µ p (δp)
Determine t at which
δn = (0.75) x10 cm
14 −3
For t ≥ 0 , δp = δp(0) expb − t τ g

(i)
pO We have
Then 0.75 x10 = 10 1 − exp − t τ nO
14 14
a f
σ = b1.6 x10 g(1350)b5x10 g
−19 16
which yields
+b1.6 x10 g(1350 + 480)b15
−19
. x10 g expb − t τ g 1 F I
H K
15
pO t = τ nO ln ⇒ t = 1.39 µs
or 1 − 0.75
σ = 10.8 + 0.439 expb − t τ g
−3
δn = 0.5x10 cm
14
(ii)
pO
We have that We find

AσV 1 F I
I = AJ = AσΕ =
L
t = τ nO ln
1 − 0.5H⇒ t = 0.693 µs
K
−3
δn = 0.25x10 cm
14
so (iii)
b10 g(5) 10.8 + 0.439 expb−t τ g
−4
We find
I =
(0.10)
pO 1 F I
or
t = τ nO ln
H
1 − 0.25
⇒ t = 0.288 µs
K
I = 54 + 2.20 exp − t τ pO b g mA 6.15
where (a)
τ pO = 3x10 s
−7
pO =
2
ni
=
b15. x10 g 2.25x10 cm
10 2
4 −3
15
nO 10
Then
68
−6
where τ nO = 10 s
4
pO pO 2.25 x10
R pO = ⇒ τ pO = =
τ pO
11 −6
R pO 10 At t = 2 x10 s
or
−7
a f b g 1 − expa−2 1f
δn 2 µs = 10
14
τ pO = 2.25x10 s or
Now δna2 µsf = 0.865 x10 cm
14 −3
δp
14
10
R p′ =
−6
= ⇒ For t > 2 x10 s
L −bt − 2 x10 g OP
−7
τ pO 2.25 x10 −6
or δn = 0.865 x10 exp M

14
R p′ = 4.44 x10 cm s
20 −3 −1
N τ Q nO
Recombination rate increases by the factor (b) (i) At t = 0 , δn = 0

R p′ 4.44 x10
20
R p′ −6
(ii) At t = 2 x10 s , δn = 0.865 x10 cm
14 −3
= ⇒ = 4.44 x10
9
11
R pO 10 R pO (iii) At t → ∞ , δn = 0
(b)
From part (a), τ pO = 2.25x10
−7
s 6.18
p-type, minority carriers are electrons
∂(δn )
6.16 In steady-state, = 0 , then
−7
∂t
Silicon, n-type. For 0 ≤ t ≤ 10 s (a)
b g
δp = g ′τ pO 1 − exp − t τ pO
Dn
d (δn )
2
−
δn
=0
= b 2 x10 gb10 g 1 − expb − t τ g τ nO
2
20 −7 dx
pO
or or
δp = 2 x10 1 − expb − t τ g d (δn ) δn
2
13
pO
2 2
−=0
−7
dx Ln
At t = 10 s,
Solution is of the form
b g = 2 x10 1 − exp(−1)
δp 10
−7 13
a
δn = A exp − x Ln + B exp + x Ln f a f
or But δn = 0 as x → ∞ so that B ≡ 0 .
δpb10 g = 1.26 x10 cm
−7 13 −3 −3
At x = 0 , δn = 10 cm
13
Then
a f
−7
For t > 10 s,
L −bt − 10 g OP δn = 10 exp − x Ln
13
−7
δp = b1.26 x10 g exp M Now

13
N τ Q F kT I
HeK
pO
Ln = Dnτ nO , where Dn = µ n
where
−7
τ pO = 10 s or
Dn = (0.0259 )(1200) = 311
2
. cm / s
6.17 Then
(a) For 0 < t < 2 x10 s
−6
Ln = (311
. ) 5x10 ⇒
−7
b g
δn = g ′τ nO 1 − exp − t τ nO a f or
b gb10 g 1 − exp −t τ
= 10
20 −6
nO
Ln = 39.4 µm
or
δn = 10 1 − expa − t τ f
14
nO
69
(b)
d (δn ) b g expa− x L f
eDn 10
13 The excess concentration δn must remain finite,
J n = eDn
dx
=
a− L f n
n so that B = 0 . At x = 0 , δn(0) = 10 cm , so
15 −3
=
b
− 1.6 x10
−19
g(311. )b10 g expa− x L f
13
n
the solution is
δn = 10 exp − x Ln
15
a f
−4
39.4 x10
We have that µ n = 1050 cm / V − s , then
2
or
a f F kT I = (1050)(0.0259) = 27.2 cm / s
J n = −12.6 exp − x Ln
H eK
2
mA / cm Dn = µ n
2
Then
6.19
L = D τ = (27.2 )b8 x10 g ⇒
−7
−3
(a) p-type silicon, p pO = 10 cm
14
and n n nO
n pO =
ni
2
=
b15. x10 g 10 2
= 2.25 x10 cm
6 −3
(a)
Ln = 46.6 µm
14
p pO 10 Electron diffusion current density at x = 0
(b) Excess minority carrier concentration d (δn )
J n = eDn x=0
δn = n p − n pO dx
At x = 0 , n p = 0 so that
= eDn
d
dx
a f
10 exp − x Ln
15
x=0
δn(0) = 0 − n pO = −2.25x10 cm
6 −3
− eD b10 g −b1.6 x10 g(27.2 )b10 g

15 −19 15
(c) For the one-dimensional case, = =

n
−4
d (δn ) δn Ln 46.6 x10
2
Dn − =0 or
τ nO
2
dx
J n = −0.934 A / cm
2
or
d (δn )
2
δn Since δp = δn , excess holes diffuse at the same
− = 0 where Ln = Dnτ nO
2
2 2 rate as excess electrons, then
dx Ln
J p ( x = 0) = +0.934 A / cm
2
The general solution is of the form
a
δn = A exp − x Ln + B exp + x Ln f a f (b)
For x → ∞ , δn remains finite, so that B = 0 . At x = Ln ,
Then the solution is
a f d (δn ) b g exp(−1)
eDn 10
15
δn = − n pO exp − x Ln J n = eDn
dx
x = Ln =
a− L f n
6.20 =
b
− 1.6 x10
−19
g(27.2)b10 g exp(−1)15
−4
p-type so electrons are the minority carriers 46.6 x10
δn ∂(δn ) or
Dn ∇ (δn ) + µ n Ε • ∇(δn ) + g ′ − =
2
J n = −0.344 A / cm
2
τ nO ∂t
∂(δn ) Then
For steady state, = 0 and for x >0, J p = +0.344 A / cm
2
∂t
g ′ = 0 , Ε = 0 , so we have
d (δn )
2
δn d (δn )
2
δn 6.21
Dn − = 0 or − =0 n-type, so we have
τ nO
2 2 2
dx dx Ln
d (δp ) d (δp ) δp
2
Dp − µ pΕ O − =0
where Ln = Dnτ nO
2
τ pO
2
dx dx
The solution is of the form
a
δn = A exp − x Ln + B exp + x Ln f a f Assume the solution is of the form
δp = A exp( sx )
70
6.23
Then (a) From Equation [6.55],
d (δp ) d (δp ) d (δn ) d (δn ) δn
2 2
= As exp( sx ) , = As exp( sx ) + µ nΕ O − =0
2
Dn
τ nO
2 2
dx dx dx dx
Substituting into the differential equation or
A exp( sx ) d (δn )
2
µn d (δn ) δn
D p As exp( sx ) − µ p Ε O As exp( sx ) − =0
2
τ pO 2
+ 2
ΕO
=0 −
dx Dn dx Ln
or We have that
Dp s − µ p Ε O s −
2 1
=0 Dn kT F I
τ pO µn
=
e H K
so we can define
Dividing by D p µn ΕO 1
s −
2
µp
ΕOs −
1
=0
Dn
ΕO =
kT e a f ≡
L′
Dp
2
Lp Then we can write
d (δn ) 1 d (δn ) δn
2
The solution for s is
L F µ Ε IJ + 4 OP dx
2
⋅
L ′ dx
+ − 2 =0
Ln
s= M
2
1 µp
Ε ± G
2 MD H D K L PQ
p
Solution will be of the form
N
O O 2
p p p δn = δn(0) exp( −αx ) where α > 0
This can be rewritten as Then
LM
1 µ LΕ F µ L Ε IJ + 1OP 2 d (δn )
= −α (δn ) and = α (δn )
d (δn )
2
2
± G
L M 2D H 2 D K PQ
p p O p p O
s= dx dx
2
N p p p Substituting into the differential equation, we

have
We may define
µ p LpΕ O 1 δn
α (δn) + ⋅ −α (δn ) − 2 = 0
2
β≡ L′ Ln
2 Dp
or
Then
α 1
α − − 2 =0
2
1
s= β ± 1+ β
2
L ′ Ln
Lp
which yields
In order that δp = 0 for x > 0 , use the minus
R| L + F L I + 1U|
S H 2 L′ K V|
2
sign for x > 0 and the plus sign for x < 0 . 1

α=
L | 2 L′
n n
Then the solution is

a f
δp( x ) = A exp s− x for x > 0
T n W
1
δp( x ) = A expa s x f for x < 0 +
Note that if Ε O = 0 , L ′ → ∞ , then α =
Ln
where (b)
s± =
1
β ± 1+ β F dT I
HeK
2
Ln = Dnτ nO where Dn = µ n
Lp
or
Dn = (1200)(0.0259 ) = 311
2
6.22 . cm / s
Computer Plot Then
Ln = (311 b g
. ) 5 x10 = 39.4 µm
−7
For Ε O = 12 V / cm , then
71
L′ =
akT ef = 0.0259 = 21.6x10 −4
cm
d (δp )
2
= 0 so that
d (δp )
= C3 and
ΕO 12 dx
2
dx
Then δp = C3 x + C4
−1
α = 5.75x10 cm
2
For −3 L < x < − L , g ′ = 0 so that
(c)
d (δp ) d (δp )
2
Force on the electrons due to the electric field is =0, = C5 , and

2
in the negative x-direction. Therefore, the dx dx
effective diffusion of the electrons is reduced and δp = C5 x + C6
the concentration drops off faster with the The boundary conditions are
applied electric field.
(1) δp = 0 at x = +3 L ; (2) δp = 0 at
x = −3 L ;
6.24
(3) δp continuous at x = + L ; (4) δp
p-type so the minority carriers are electrons, then
δn ∂(δn ) continuous at x = − L ; The flux must be
Dn ∇ (δn ) + µ n Ε • ∇(δn ) + g ′ − =
2
continuous so that
τ nO ∂t d (δp ) d (δp )
Uniform illumination means that (5) continuous at x = + L ; (6)
dx dx
∇(δn ) = ∇ (δn ) = 0 . For τ nO = ∞ , we are
2
continuous at x = − L .
left with Applying these boundary conditions, we find
d (δn )
dt
= g ′ which gives δn = g ′t + C1
G′
δp = O 5 L − x
2 Dp
2 2
bfor − L < x < + Lg
For t < 0 , δn = 0 which means that C1 = 0 . GO′ L
Then δp = (3 L − x ) for L < x < 3 L
Dp
δn = GO′ t for 0 ≤ t ≤ T
GO′ L
d (δn ) δp = (3 L + x ) for −3L < x < − L
For t > T , g ′ = 0 so we have =0 Dp
dt
Or
δn = GO′ T (No recombination) 6.26
d 0.75
µp =
F I b160 x10 g
= = 1875 cm / V − s
2
Ε Ot 2.5
6.25
H 1K
−6
n-type so minority carriers are holes, then

δp ∂(δp ) Then
D p ∇ (δp ) − µ p Ε • ∇(δp ) + g ′ − =
2
τ pO ∂t
D =
b µ Ε g ( ∆t ) p O
2 2
∂(δp )
p
16t O
We have τ pO = ∞ , Ε = 0 , = 0 (steady
∂t
LM(1875)F 2.5I OP b75.5x10 g 2
N H 1 KQ
−6 2
state). Then we have
d (δp ) d (δp )
16b160 x10 g
2 2
g′ =
+ g ′ = 0 or
−6
Dp 2 2
=−
dx dx Dp
which gives
For − L < x < + L , g ′ = GO′ = constant. Then Dp = 48.9 cm / s
2
d (δp ) GO′ From the Einstein relation,

=− x + C1 and
dx Dp Dp kT 48.9
= = = 0.02608 V
GO′ µp e 1875
δp = − x + C1 x + C2
2
2 Dp
For L < x < 3 L , g ′ = 0 so we have
72
and
6.27
F − x IJ FG p + δp IJ
H n K
E Fi − E Fp = kT ln O
expG
2
Assume that f ( x , t ) = (4πDt )

H 4 Dt K
−1/ 2
i
F 2.25x10 + 10 IJ
= (0.0259 ) lnG
4 15
is the solution to the differential equation

F ∂ f IJ = ∂f H 1.5x10 K 10
DG
2
H ∂x K ∂t 2
or
E Fi − E Fp = 0.2877 eV
To prove: we can write
∂f F −2 x I expFG − x IJ 2
H 4 Dt K H 4 Dt K
= (4πDt )
−1/ 2
6.30
∂x (a) p-type
and FG p IJ
F −2 x I expFG − x IJ E Fi − E F = kT ln
Hn K
O
2
∂ f
2 2
= (4πDt )
H 4 Dt K H 4 Dt K
−1/ 2
i
∂x
2
FG 5x10 IJ 15
F −2 I expFG − x IJ 2 = ( 0.0259 ) ln
H 15. x10 K 10
+(4πDt )
H 4 Dt K H 4 Dt K
−1/ 2
or
Also E Fi − E F = 0.3294 eV
∂f
= ( 4πDt ) G
F − x IJ F −1I expFG − x IJ 2 2
(b)
H 4 D K H t K H 4 Dt K
−1/ 2
−3
δn = δp = 5x10 cm
14
∂t
2
F −1I t expFG − x IJ 2 and

b1.5x10 g
+(4πD)
H 2 K H 4 Dt K
−1/ 2 −3 / 2 2
10
−3
= = 4.5 x10 cm
4
nO 15
5 x10
∂ f ∂f
2
Substituting the expressions for and Then

∂x ∂t
2
into the differential equation, we find 0 = 0 , FG n + δn IJ

E Fn − E Fi = kT ln
H n K
O
Q.E.D.
i
6.28 F 4.5x10 + 5x10 IJ

= ( 0.0259 ) lnG
4 14
Computer Plot
H 1.5x10 K 10
6.29 or
n-type E Fn − E Fi = 0.2697 eV
δn = δp = g ′τ pO = 10 b gb10 g = 1021 −6 15
cm
−3
and
We have nO = 10 cm
16 −3 FG p + δp IJ
E Fi − E Fp = kT ln
H n K
O
ni
2
b15. x10 g 10 2
i
pO = = 16
= 2.25 x10 cm
4 −3
F 5x10 + 5x10 IJ
= ( 0.0259 ) lnG
15 14
Now
nO 10
H 15. x10 K 10
FG n + δn IJ or
H n K E Fi − E Fp = 0.3318 eV
O
F 10 + 10 IJ
= (0.0259 ) lnG
16 15
H 15. x10 K 10
or
E Fn − E Fi = 0.3498 eV
73
6.31 Neglecting the minority carrier electron

n-type GaAs; nO = 5 x10 cm
16 −3 concentration
b1.8x10 g 2 L b10 g( x) OP
= kT ln M
14
N a50 µmfb1.8x10 g Q
6
2
ni −5 −3
E Fn − E Fi
pO = = 16
= 6.48 x10 cm 6
nO 5 x10
We find
We have
x( µm) E Fn − E Fi (eV )
δn = δp = (0.1) N d = 5x10 cm
15 −3
(a) 0 −0.581
FG n + δn IJ 1 +0.361
H n K
O
2 +0.379
i
F 5x10 + 5x10 IJ
= ( 0.0259 ) lnG
16 15
10 +0.420
H 1.8x10 K 6
20
50
+0.438
+0.462
or
E Fn − E Fi = 0.6253 eV Quasi-Fermi level for holes: we have
We have FG p + δp IJ
FG N IJ E Fi − E Fp = kT ln
H n K
O
Hn K
d i
−3
We have pO = 10 cm , δp = δn
16
i
F 5x10 IJ
= (0.0259 ) lnG
16 We find
H 1.8x10 K 6 x( µm) E Fi − E Fp (eV )
or 0 +0.58115
E F − E Fi = 0.6228 eV 50 +0.58140
Now
a
E Fn − E F = E Fn − E Fi − E F − E Fi fa f 6.33
= 0.6253 − 0.6228
so (a) We can write
E Fn − E F = 0.0025 eV FG p IJ
Hn K
E Fi − E F = kT ln O
(b)
FG IJ
i
pO + δp and
E Fi − E Fp = kT ln
H ni K E − E = kT lnG
F p + δp IJ
H n K
O
= (0.0259 ) ln
FG 5x10 IJ15
Fi Fp
i
H 1.8x10 K 6 so that
a f ( ) =E −E
E Fi − E Fp − E Fi − E F
or F Fp
E Fi − E Fp = 0.5632 eV F p + δp IJ − kT lnFG p IJ
= kT lnG
H n K Hn K
O O
i i
6.32 or
Quasi-Fermi level for minority carrier electrons FG p + δp IJ = (0.01)kT
E − E = kT lnG
F n + δn IJ E F − E Fp = kT ln
H p K
O
H n K
O
O
Fn Fi
i Then
We have pO + δp
F x IJ
δn = b10 gG pO
= exp(0.01) = 1.010 ⇒
H 50 µm K
14
74
δp 6.37
= 0.010 ⇒ low-injection, so that We have that
pO
δp = 5x10 cm
12 −3
R=
Cn C p N t np − nib 2
g
Cn (n + n ′ ) + C p ( p + p ′ )
(b)
F δp I
≈ kT lnG J
bnp − n g 2
τ an + n f + τ a p + n f
i
=
E Fn − E Fi
Hn K i
pO i nO i
FG 5x10 IJ 12 If n = n + δn and p = p + δn , then

O
an + δnfa p + δnf − n
O
= ( 0.0259 ) ln
H 15. x10 K 10
2
τ an + δn + n f + τ a p + δn + n f
R= O O i
or pO O i nO O i
n p + δnan + p f + (δn ) − n
E Fn − E Fi = 0.1505 eV 2 2
τ an + δn + n f + τ a p + δn + n f
= O O O O i
pO O i nO O i
6.34
If δn << ni , we can neglect the (δn ) ; also
2
Computer Plot
nO pO = ni
2
6.35
Then
Computer Plot
af
δn nO + pO
6.36
(a)
R=
τ pO an + n f + τ a p + n f
O i nO O i
R=
b
Cn C p N t np − ni
2
g (a)
For n-type, nO >> pO , nO >> ni
Cn (n + n ′ ) + C p ( p + p ′ ) Then
=
bnp − n gi
2 R
=
1
δn τ pO
+7
= 10 s
−1
τ pO (n + n ′) + τ nO ( p + p ′ )
(b)
For n = p = 0
Intrinsic, nO = pO = ni
− ni − ni
2
R= ⇒ R= Then
τ pO ni + τ nO ni τ pO + τ nO R 2 ni
(b)
=
a f a f
δn τ pO 2 ni + τ nO 2ni
We had defined the net generation rate as or
a
g − R = g O + g ′ − RO + R ′ where f R
=
1
=
1
⇒
g O = RO since these are the thermal equilibrium δn τ pO + τ nO 10 + 5 x10
−7 −7
generation and recombination rates. If g ′ = 0 ,

R +6 −1
− ni = 1.67 x10 s
then g − R = − R ′ and R ′ = so that δn
τ pO + τ nO (c)
ni p-type, pO >> nO , pO >> n
g−R=+ . Thus a negative i
τ pO + τ nO Then
recombination rate implies a net positive R 1 1 +6 −1
= = −7
= 2 x10 s
generation rate. δn τ nO 5 x10
75
6.38
(iii) s = ∞ , δp = 10
LM1 − expFG − x IJ OP
N H L KQ
(a) From Equation [6.56], 14
d (δp ) δp
2
p
Dp + g′ − =0
(b) (i) s = 0 , δp(0) = 10 cm
−3
τ pO
2 14
dx
Solution is of the form (ii) s = 2000 cm / s , δp(0) = 0.833 x10 cm
14 −3
δp = g ′τ pO + A exp − x Lp + B exp + x Lp b g b g (iii) s = ∞ , δp(0) = 0

At x = ∞ , δp = g ′τ pO , so that B ≡ 0 ,
Then 6.39
δp = g ′τ pO + A exp − x L p b g Ln = Dnτ nO = b
(25) 5 x10 −7 = 35.4 x10 −4 cm g
We have
(a)
d (δp )
Dp
dx
x = 0 = s(δp ) x = 0 At x = 0 , g ′τ nO = 2 x10 b 21
gb5x10 g = 10 −7 15
cm
−3
Or δnO = g ′τ nO = 10 cm
15 −3
We can write
d (δp ) −A For x > 0
x =0 = and (δp) x=0 = g ′τ pO + A
d (δn ) δn d (δn ) δn
2 2
dx Lp
Dn − =0⇒ − =0
τ nO
2 2 2
Then dx dx Ln
− AD p
Lp
b
= s g ′τ pO + A g Solution is of the form
a
δn = A exp − x Ln + B exp + x Ln f a f
Solving for A we find At x = 0 , δn = δnO = A + B
− sg ′τ pO At x = W ,
A=
Dp
+s
δn = 0 = A exp −W Ln + B exp +W Ln a f a f
Solving these two equations, we find
Lp
−δnO exp +2W Ln a f
The excess concentration is then
L F −x I O
A=
1 − exp 2W Ln a f
δp = g ′τ M1 − ⋅ expG J P
s
N bD L g + s H L K Q
δnO
B=
a f
pO
1 − exp 2W Ln
p p p
where
Substituting into the general solution, we find
L = D τ = (10)b10 g = 10 cm
−7 −3
p p pO δnO
δn =
a
exp +W Ln − exp −W Ln f a f
Now
L F −xI O k
× exp +(W − x ) Ln − exp −(W − x ) Ln p
δp = b10 gb10 gM1 − expG J P
s −7
or
N b10 10 g + s H L K Q
21
−3
p δnO sinh (W − x ) Ln
δn =
or sinh W Ln
L s expFG − x IJ OP
δp = 10 M1 − where
N 10 + s H L K Q
14
4
−3
δnO = 10 cm and Ln = 35.4 µm
15
p
(i) s = 0 , δp = 10 cm
14 −3 (b)
If τ nO = ∞ , we have
(ii) s = 2000 cm / s ,
L F −xI O
δp = 10 M1 − 0.167 expG J P
d (δn )
2
=0
H L KQ
14
N
2
dx
p so the solution is of the form
δn = Cx + D
76
Applying the boundary conditions, we find 6.41

x F I For −W < x < 0 ,
δn = δnO 1 −
W H K Dn
d (δn )
2
2
+ GO′ = 0
dx
6.40 so that
For τ pO = ∞ , we have d (δn ) GO′
=− x + C1
dx Dp
d (δp ) d (δp )
2
2
= 0 so that = A and and
dx dx
GO′
δp = Ax + B δn = − x + C1 x + C2
2
At x = W 2 Dn
d (δp ) For 0 < x < W ,
− Dp x =W = s ⋅ (δp ) x =W d (δn )
2
d (δn )
dx = 0 , so= C3 , δn = C3 x + C4
or dx
2
dx
− D p A = s( AW + B ) The boundary conditions are:
which yields d (δn )
(1) s = 0 at x = −W , so that x =− W = 0
B=
−A
s
D p + sWb g dx
(2) s = ∞ at x = +W , so that δn(W ) = 0
At x = 0 , the flux of excess holes is (3) δn continuous at x = 0
d (δp ) d (δn )
10 = − D p x = 0 = − Dp A
19
(4) continuous at x = 0
dx dx
so that Applying the boundary conditions, we find
−10 GO′W GO′W
19 2
−4
A= = −10 cm
18
C1 = C3 = − , C2 = C4 = +
10 Dn Dn
and Then, for −W < x < 0
10
18
F 10 + W I G′
b g
B=
s Hs K
(10 + sW ) = 1018 δn = O − x − 2Wx + 2W
2 Dn
2 2
The solution is now

F 10I and for 0 < x < +W
H
δp = 10 W − x +
sK
G ′W
18
δn = O (W − x )
Dn
(a)
For s = ∞ ,
δp = 10 20 x10
18
b −4
g
− x cm
−3 6.42
Computer Plot
(b)
For s = 2 x10 cm / s
3
δp = 10
18
b70x10 − xg cm
−4 −3
77
(page left blank)
78
Chapter 7
Problem Solutions
(c)
−3 −3
N d = 10 cm , N a = 10 cm
17 17
7.1
FG N N IJ Then
Vbi = Vt ln
H n K
a d
2 Si: Vbi = 0.814 V , Ge: Vbi = 0.432 V ,
i
−3 GaAs: Vbi = 1.28 V

where Vt = 0.0259 V and ni = 1.5 x10 cm
10
We find
(a) 7.3
Computer Plot
Vbi (V )
−3
For N d = 10 cm
15
(i ) N a = 10 cm
15 −3
0.575 V 7.4
Computer Plot
(ii ) N a = 10 cm
16 −3
0.635
(iii ) N a = 10 cm
17 −3
0.695 7.5
(a) n-side:
(iv ) N a = 10 cm
18 −3
0.754
FG N IJ
Hn K
d
(b) i
For N d = 10 cm
18 −3
Vbi (V )
= ( 0.0259 ) ln
FG 5x10 IJ 15
(i ) N a = 10 cm
15 −3
0.754 V H 15. x10 K 10
(ii ) N a = 10 cm
16 −3
0.814 or
E F − E Fi = 0.3294 eV
(iii ) N a = 10 cm
17 −3
0.874
p-side:
(iv ) 0.933
FG N IJ
−3
N a = 10 cm
18
Hn K
a
7.2 F 10 IJ
= ( 0.0259 ) lnG
17
Si: ni = 1.5 x10 cm

10 −3
−3
H 15. x10 K 10
Ge: ni = 2.4 x10 cm

13
or
GaAs: ni = 18
. x10 cm
6 −3 E Fi − E F = 0.4070 eV
FG N N IJ (b)
Vbi = Vt ln
H n K and Vt = 0.0259 V
a d
2
Vbi = 0.3294 + 0.4070
i
or
(a) Vbi = 0.7364 V
−3 −3
N d = 10 cm , N a = 10 cm
14 17
(c)
Then
Si: Vbi = 0.635 V , Ge: Vbi = 0.253 V ,
FG N N IJ
Vbi = Vt ln
H n K
a d
2
GaAs: Vbi = 110

. V i
(b) Lb10 gb5x10 g OP

= (0.0259 ) ln M
17 15
N d = 5 x10 cm , N a = 5 x10 cm
Then
16 −3 16 −3
MN b1.5x10 g PQ 10 2
or
Si: Vbi = 0.778 V , Ge: Vbi = 0.396 V , Vbi = 0.7363 V
GaAs: Vbi = 1.25 V
83
FG N N IJ
(d) Vbi = Vt ln
H n K
a d
LM 2 ∈V FG N IJ FG 1 IJ OP
2
1/ 2
i
xn =
N e H N KH N + N KQ
bi a
Lb2 x10 gb2 x10 g OP
= (0.0259 ) ln M
16 16
NM b15. x10 g PQ
d a d
=M
L 2(11.7)b8.85x10 g(0.736)
−14
10 2
N 1.6 x10
−19 or
Vbi = 0.7305 V
×G
F 10 IJ F 1 I OP
17 1/ 2
(d)
H 5x10 K H 10 + 5x10 K Q
15 17 15
L 2(11.7)b8.85x10 g(0.7305)
x =M
−14
or
x n = 0.426 µm
n
N 1.6 x10
−19
Now ×G
F 2 x10 IJ F 1 I OP 16 1/ 2
xp
L 2(11.7)b8.85x10 g(0.736)
=M
−14
H 2 x10 K H 2 x10 + 2 x10 K Q
16 16 16
N 1.6 x10
−19 or
x n = 0.154 µm
×G
F 5x10 IJ F 1 I OP
15 1/ 2
By symmetry
H 10 K H 10 + 5x10 K Q
17 17 15
x p = 0.154 µm
or Now
x p = 0.0213 µm eN d xn
Ε max =
We have ∈
Ε max =
eN d xn b1.6x10 gb2 x10 gb0.154 x10 g
−19 16 −4
(11.7)b8.85x10 g
∈ = −14
b1.6x10 gb5x10 gb0.426x10 g

−19 15 −4
or
(11.7)b8.85x10 g
= −14
Ε max = 4.76 x10 V / cm
4
or
Ε max = 3.29 x10 V / cm
4
7.7
(b) nO = N C exp
N kT Q
C F
7.6
(a) n-side
F 2 x10 IJ ⇒ F −0.21 I
= 2.8 x10 exp
H 0.0259 K
19
= ( 0.0259 ) lnG
16
E F − E Fi
H 15. x10 K 10
or
E F − E Fi = 0.3653 eV nO = N d = 8.43 x10 cm
15 −3
(n-region)
p-side
F 2 x10 IJ ⇒ LM −a E − E f OP
pO = N V exp
N kT Q
F V
= ( 0.0259 ) lnG
16
E Fi − E F
H 15. x10 K 10
F −0.18 I
= 1.04 x10 exp
H 0.0259 K
19
E Fi − E F = 0.3653 eV
(b) or
Vbi = 0.3653 + 0.3653 ⇒ pO = N a = 9.97 x10 cm
15 −3
(p-region)
Vbi = 0.7306 V (c)
(c) FG N N IJ
Vbi = Vt ln
H n K
a d
2
i
84
L b9.97 x10 gb8.43x10 g OP

= ( 0.0259 ) ln M
15 15 (d)
x p = 0.25 x n ⇒ x p = 0.0916 µm
MN b15. x10 g PQ 10 2
(e)
or eN d x n eN a x p
Vbi = 0.690 V Ε max = =
∈ ∈
7.8
b1.6x10 gb1.04 x10 gb0.366 x10 g
−19 16 −4
. )b8.85 x10 g
=
(a) GaAs: Vbi = 1.20 V , ni = 18
. x10 cm
6 −3 (131 −14
x p = 0.2W = 0.2 xn + x p b g or
Ε max = 5.25 x10 V / cm
4
or
xp
= 0.25 7.9
xn
Also (a) Vbi = ( 0.0259 ) ln
LM b10 gb10 g OP
16 15
N d xn = N a x p ⇒
xp
=
Nd
= 0.25
MN b15. x10 g PQ 10 2
xn Na or
Now Vbi = 0.635 V
FG N N IJ (b)
H n K
Vbi = Vt ln
L 2 ∈V FG N IJ FG 1 IJ OP
a d
1/ 2
2
x =M
N e H N KH N + N KQ
i bi a
n
or
F 0.25N IJ
d a d
1.20 = (0.0259 ) lnG

2
L 2(11.7)b8.85x10 g(0.635)
=M
−14
H n K
a
N
2
−19
i 1.6 x10
Then
0.25 N F 1.20 I
2
F 10 IJ F 1 I OP
×G
16 1/ 2
n
= exp
i
2
H 0.0259 K
a
H 10 K H 10 + 10 K Q 15 16 15
or or x n = 0.864 µm
N = 2 n exp M
L 1.20 OP Now
a
N 2(0.0259) Q
i
=M
1/ 2
N e H N KH N + N KQ
bi d
xp
or
a a d
N a = 4.14 x10 cm
16 −3
L 2(11.7)b8.85x10 g(0.635)
=M
−14
(b)
N d = 0.25 N a ⇒ N d = 1.04 x10 cm
16 −3 N 1.6 x10
−19
(c)
×G
F 10 IJ F 1 I OP 15 1/ 2
x =M
L 2 ∈V FG N IJ FG 1 IJ OP 1/ 2
H 10 K H 10 + 10 K Q 16 16 15
N e H N KH N + N KQ
bi a
n
or x p = 0.0864 µm
d a d
(c)
L 2(131. )b8.85x10 g(1.20)
=M
−14
Ε max =
eN d xn
N 1.6x10 −19 ∈
b1.6x10 gb10 gb0.864 x10 g
F 4I F IO
−19 15 −4
1/ 2
1
(11.7)b8.85x10 g
=
×
H 1 K H 4.14 x10 + 1.04 x10 K PQ 16 16
−14
or or
Ε max = 1.34 x10 V / cm
4
x n = 0.366 µm
85
(b)
7.10 For a 1% change in Vbi , assume that the change
FG N N IJ and 2
is due to ni , where the major dependence on
H n K
Vbi = Vt ln a d
2
temperature is given by
FG IJ
i
n = N N expG
F − E IJ −Eg
H kT K ni ∝ exp
H K
2 g 2
i C V
kT
We can write Now
FTI 3
LM N N OP
H 300 K V aT f N n aT f Q
a d
N N =N N ln 2
C V CO VO
V aT f L N N OP
bi 2
= i 2
Now
ln M
V = V lna N N f − lnb n g N n aT f Q
bi 1 a d
2 2
bi t a d i
= V lna N N f − lna N N f lna N N f − ln n aT f

i 1
2
F T I + E OP
t a d CO VO
lna N N f − ln n aT f
a d i 2
3 = 2
H 300 K kT Q
g
− ln a d i 1
lna N N f − lna N N f − G
F − E IJ
H kT K
g
or a d C V
L F N N IJ − 3 lnF T I + E OP
V = V MlnG
=
F − E IJ
2
N H N N K H 300K kT Q lna N N f − lna N N f − G

a d g
H kT K
bi t g
a d C V
CO VO
1
= lln b5x10 gb10 g

or
FTI 17 17
0.40 = ( 0.0250)
H 300 K − ln b2.8 x10 gb1.04 x10 g +
E U
V
L L b5x10 gb10 g OP − 3 lnF T I
19 19 g
kT W
15 16
× Mln M
N Nb2.8x10 gb1.04 x10 g Q H 300 K
2
/lln b5x10 gb10 g

19 19 17 17
112
. OP − ln b 2.8 x10 gb1.04 x10 g +
E U
V
(0.0259)aT 300f Q
+ 19 19 g
kT W 1
Then or
F T I LM−15.58 − 3 lnF T I + 43.24 OP Eg
15.44 =
H 300 K N H 300 K aT 300f Q a f=
Vbi T2
79.897 − 88.567 +
kT
V aT f
2
By trial and error E

79.897 − 88.567 +
bi 1 g
T = 490 K
kT1
We can write
7.11
F N N IJ
= V lnG
−8.67 +
Eg
−8.67 +
Eg
H n K
a d
(a) Vbi t kT2 kT2
2
0.990 = =
i
112
.
Lb5x10 gb10 g OP
= (0.0259 ) ln M
17 17 −8.67 +
0.0259
34.57
MN b1.5x10 g PQ 10 2 so that
Eg 112
.
or
kT2
= 42.90 =
FTI
Vbi = 0.8556 V (0.0259)
H 300 K
2
We then find
T2 = 302.4 K
86
7.12 (d)
(b) For N d = 10 cm ,
16 −3
eN d xn
Ε max =
FG N IJ ∈
Hn K
d
b1.6x10 gb10 gb2.43x10 g

−19 16 −7
(11.7)b8.85x10 g
i =
F 10 IJ
= ( 0.0259 ) lnG
16
−14
H 15. x10 K 10 or
Ε max = 3.75 x10 V / cm
2
or
E F − E Fi = 0.3473 eV
−3
7.14
For N d = 10 cm ,
15
Assume Silicon, so
E F − E Fi = (0.0259) ln
FG 10 IJ 15
L =G
F ∈ kT IJ 1/ 2
H 1.5x10 K 10 D
He N K 2
d
or
E F − E Fi = 0.2877 eV
=M
L(11.7)b8.85x10 g(0.0259)b1.6x10 −14 −19
g OP 1/ 2
Then
Vbi = 0.3473 − 0.2877
MN b1.6x10 g N −19 2
d PQ
or
or
Vbi = 0.0596 V L =G
F 1.676x10 IJ 5 1/ 2
H N K
D
d
7.13
= V lnG
F N N IJ (a) N d = 8 x10 cm , LD = 0.1447 µm
14 −3
H n K
a d
(a) Vbi −3
(b) N d = 2.2 x10 cm , LD = 0.02760 µm
t 2 16
i
L b10 gb10 g OP
= ( 0.0259 ) ln M
16 12
(c) N d = 8 x10 cm , LD = 0.004577 µm
17 −3
MN b1.5x10 g PQ 10 2 Now
(a) Vbi = 0.7427 V
or
(b) Vbi = 0.8286 V
Vbi = 0.456 V
(c) Vbi = 0.9216 V
(b)
xn =
LM 2(11.7)b8.85x10 g(0.456) −14 Also
LM 2(11.7)b8.85x10 gaV f −14
N 1.6 x10
−19
xn =
N 1.6x10 −19
bi
×G
F 10 IJ F 1 12
I OP 1/ 2
F 8x10 IJ FG 1 IJ OP
H 10 K H 10 + 10 KQ
1/ 2
×G
17
H N K H 8x10 + N K Q
16 16 12
17
or d d
−7 Then
x n = 2.43 x10 cm
(c) (a) x n = 1.096 µm
xp =
LM 2(11.7)b8.85x10 −14
g(0.456) (b) x n = 0.2178 µm
N 1.6 x10
−19
(c) x n = 0.02731 µm
×G
F 10 16
IJ F 1 I OP 1/ 2
Now
H 10 12
K H 10 16
+ 10
12
KQ (a)
LD
= 0.1320
or xn
−3
x p = 2.43x10 cm
87
LD Vbi = 0.856 V
(b) = 0.1267
xn (b)
LD L 2 ∈aV + V f FG N IJ FG 1 IJ OP
x =M
1/ 2
N e H N KH N + N KQ
bi R a
(c) = 0.1677 n
xn d a d
L 2(11.7)b8.85x10 g(5.856)
=M
−14
7.15
Computer Plot N 1.6x10 −19
F 5x10 IJ F 1 I OP
×G
17 1/ 2
7.16
FG N N IJ H 1x10 K H 5x10 + 1x10 K Q 17 17 17
or
(a) Vbi = Vt ln
H n K
a d
2
i x n = 0.251 µm
Lb2 x10 gb2 x10 g OP
= (0.0259 ) ln M
16 15 Also
NM b15. x10 g QP 10 2 L 2 ∈aV + V f FG N IJ FG 1 IJ OP

=M
1/ 2
N e H N KH N + N KQ
bi R d
xp
or a a d
Vbi = 0.671 V L 2(11.7)b8.85x10 g(5.856)

=M
−14
(b)
N 1.6x10 −19
LM 2 ∈aV + V f FG N + N IJ OP 1/ 2
F 1x10 IJ F 1 I OP 1/ 2
N e H N N KQ ×G
17
W= bi R a d
a d
H 5x10 K H 5x10 + 1x10 K Q17 17 17
=S
R 2(11.7)b8.85x10 gaV + V f −14
bi R or
T 1.6 x10
−19
x p = 0.0503 µm
×M
L 2 x10 + 2 x10 OPUV 16 15
1/ 2 Also
W = xn + x p
N b2 x10 gb2 x10 g QW 16 15
or
or W = 0.301 µm
W = 7.12 x10
−9
aV + V f 1/ 2
(c)
For VR = 0 , W = 0.691x10 cm
bi R
−4
Ε max =
a
2 Vbi + VR f= 2(5.856)
−4
−4
W 0.301x10
For VR = 8 V , W = 2.48 x10 cm or
Ε max = 3.89 x10 V / cm
5
(c)
Ε max =
a
2 Vbi + VR f (d)
W
CT =
∈A
=
b
(11.7) 8.85x10 −14 10 −4 gb g
For VR = 0 , Ε max = 1.94 x10 V / cm
4
−4
W 0.301x10
For VR = 8 V , Ε max = 7.0 x10 V / cm
4 or
CT = 3.44 pF
7.17
FG N N IJ 7.18
FG N N IJ
(a) Vbi = Vt ln
H n K
a d
(a) Vbi = Vt ln
H n K
2 a d
i
Lb5x10 gb10 g OP
2
i
= (0.0259 ) ln M L 50 N OP
17 17
= (0.0259 ) ln M
2
MN b1.5x10 g PQ 10 2
MN b1.5x10 g PQ
a
10 2
or
88
We can write (b)

F 0.752 I = 50 N 2
FG 2 N N IJ
H 0.0259 K b1.5x10 g V a2 N f H n K
a d
exp a
2
kT ln 2
10
V aN f F N N IJ
bi
= a i
kT lnG
or
LM 0.752 OP H n K
bi a a d
10 2
1.5 x10
F N N IJ
i
Na =
50
exp
N 2(0.0259) Q kT ln 2 + kT lnG
H n K
a d
and 2
=
F N N IJ
i
−3
N a = 4.28 x10 cm
15
kT lnG
H n K
a d
Then 2
i
−3
N d = 2.14 x10 cm
17
So we can write this as
(b) V a 2 N f kT ln 2 + V a N f
V aN f V aN f
=
LM 2 ∈aV + V f ⋅ FG 1 IJ OP
bi a bi a
1/ 2
N e H N KQ
bi a bi a
xp ≈ W ≈ bi R
so
∆Vbi = kT ln 2 = ( 0.0259 ) ln 2
a
L 2(11.7)b8.85x10 g(10.752) OP
=M
−14 1/ 2
or
N b1.6x10 gb4.28x10 g Q −19 15
∆Vbi = 17.95 mV
or
x p = 1.80 µm 17.20
(a)
(c)
L e ∈ N OP 1/ 2 LM 2 ∈aV + V f FG N + N IJ OP 1/ 2
W ( A) N H N N KQ
biA R a dA
C′ ≈ M
N 2aV + V f Q
a
e
= a dA
W ( B ) L 2 ∈ aV + V f F N + N I O
bi R 1/ 2
Lb1.6x10 g(11.7)b8.85x10 gb4.28x10 g OP

=M
−19 −14 15 1/ 2
MN e GH N N JK PQ
biB R a dB
N 2(10.752 ) Q or
a dB
W ( A) L aV + V f a N + N f F N I O
or 1/ 2
=M ⋅G JP
W ( B ) N aV + V f a N + N f H N K Q
C ′ = 5.74 x10
−9
F / cm
2 biA
⋅ R a dA dB
biB R a dB dA
We find
7.19
(a) Neglecting change in Vbi
Lb10 gb10 g OP = 0.7543 V
V = ( 0.0259 ) ln M
18 15
R| LM 2 OP U| 1/ 2
biA
MN b15. x10 g PQ 10 2
C ′a2 N f | N a2 N + N f Q |
=S V| V = (0.0259 ) ln M
L b10 gb10 g OP = 0.8139 V
18 16
C ′a N f | F I
a a d
|T GH N + N JK |W
1 biB
NM b1.5x10 g QP 10 2
a d So we find
W ( A) LF 5.7543 I F 10 + 10 I F 10 I O
+
For a n p ⇒ N d >> N a 1/ 2
G JG J
18 15 16
W ( B ) MNH 5.8139 K H 10 + 10 K H 10 K PQ
Then =
a f
18 16 15
C′ 2 Na
C′ Naa f = 2 = 1.414 or
W ( A)
= 313
.
so a 41.4% change.
W ( B)
89
(b)
a f 2 VbiA + VR
9 x10 = 1.22 x10 Vbi + VR ⇒
10 9
a f
Vbi + VR = 73.77 V
Ε ( A) W ( A) W ( B ) aV f
+ VR and
Ε ( B ) 2aV + V f W ( A) aV +V f
= = ⋅ biA
biB R biB R
VR = 73 V
W ( B) (b)
F 1 I F 5.7543I LM b4 x10 gb4 x10 g OP ⇒ 16 17
=
H 313. K H 5.8139 K Vbi = (0.0259 ) ln
MN b15. x10 g PQ 10 2
or
Ε ( A) V = 0.826 V
b3x10 g = LMN (112.7b)1b.68.x8510x10g g OPQaV + V f

bi
= 0.316 −19
Ε( B) 5 2
−14 bi R
(c)
L ∈N N O 1/ 2
L b4 x10 gb4 x10 g OP 16 17
C ′ ( A) MN 2aV + V fa N + N f PQ
×M
a dA
C ′( B) L
= biA R a dA
N 4 x10 + 4 x10 Q 16 17
MN 2aV +∈VNfaNN + N f OPQ

1/ 2
j a dB
which yields
Vbi + VR = 8.007 V
biB R a dB
and
LF N IJ FG V + V IJ FG N + N IJ OP
= MG
1/ 2
VR = 7.18 V
NH N K H V + V K H N + N K Q
dA biB R a dB
(c)
LM b4 x10 gb4 x10 g OP ⇒
dB biA R a dA
LF 10 IJ F 5.8139 I FG 10 + 10 IJ OP
= MG
15 18 16 1/ 2 17 17
NH 10 K H 5.7543K H 10 + 10 K Q
16 18 15
Vbi = (0.0259 ) ln
MN b15. x10 g PQ 10 2
or V = 0.886 V
C ′j ( A)
b3x10 g = LM (112.7b)1b.68.x8510x10g g OPaV + V f
bi
−19
= 0.319 2
C ′j ( B )
5
N Q −14 bi R
17.21
×M
L b4 x10 gb4 x10 g OP 17 17
(a) Vbi
L b4 x10 gb4 x10 g OP ⇒
= (0.0259 ) ln M
15 17
N 4 x10 + 4 x10 Q 17 17
MN b1.5x10 g PQ 10 2 which yields

Vbi + VR = 1.456 V
Vbi = 0.766 V and
Now VR = 0.570 V
=M
L 2eaV + V f FG N N IJ OP 1/ 2
Ε
N ∈ H N + N KQ
bi R a d
max
17.22
a d
(a) We have
so
LM ∈ N N OP
b3x10 g = LMN (112.7b)1b.68.x8510x10g g OPQaV + V f
1/ 2
−19
N 2V a N + N f Q
2 a d
5
−14 bi R C ( 0) j
= bi a d
C (10) L
L b4 x10 gb4 x10 g OP MN 2aV +∈V Nfa NN + N f OPQ
1/ 2
15 17 j
×M
a d
N 4 x10 + 4 x10 Q 15 17
or
bi R a d
or
C ( 0)
. =G
F V + V IJ 1/ 2
H V K
j
= 313 bi R
C (10)
j bi
90
For VR = 10 V , we find
7.24
(313
. ) Vbi = Vbi + 10
L e ∈ N N OP
2
1/ 2
or C′ = M
N 2aV + V fa N + N f Q
a d
Vbi = 114
. V bi R a d
(b) and
x p = 0.2W = 0.2 x p + xn b g L b10 gb10 g OP
V = ( 0.0259 ) ln M
18 15
Then
xp Nd
bi
MN b15. x10 g PQ 10 2
= 0.25 = or
xn Na Vbi = 0.754 V
Now For N a >> N d , we have
FG N N IJ ⇒ L b1.6x10 −19
g(11.7)b8.85x10 gb10 g OP −14 15 1/ 2
H n K
Vbi = Vt ln
C′ = M
a d
N 2aV + V f Q
2
i
bi R
so
L 0.25N OP
. = (0.0259 ) ln M
2
a
or
L8.28x10 −17
OP 1/ 2
C′ = M
114
MN b1.8x10 g PQ 6 2
N V +V bi R Q
We can then write
L 114. OP For VR = 1 V , C ′ = 6.87 x10
−9 2
6 F / cm
1.8 x10
N = exp M
N 2(0.0259) Q For VR = 10 V , C ′ = 2.77 x10
−9 2
a F / cm
0.25
−4
If A = 6 x10 cm , then
2
or
N a = 1.3x10 cm
16 −3 For VR = 1 V , C = 4.12 pF
and For VR = 10 V , C = 1.66 pF
N d = 3.25 x10 cm
15 −3 The resonant frequency is given by
1
fO =
7.23 2π LC
Vbi
L b10 gb5x10 g OP
= (0.0259 ) ln M
16 16
so that
For VR = 1 V , f O = 1.67 MHz
MN b18. x10 g PQ 6 2
For VR = 10 V , f O = 2.63 MHz
or
Vbi = 1.20 V 7.25
Now eN d xn
LM 1 OP 1/ 2 Ε max =
∈
C ′ aV f NV + V Q = LMV + V OP 1/ 2
+
For a p n junction,
C ′ aV f L
j R1
= bi R1 bi R2
MNV +1V
R2 OP NV + V Q
1/ 2
bi R1
x ≈M
L 2 ∈aV + V f OP 1/ 2
Q
bi R
So
bi R2
n
N eN Q d
so that
(3)2 =
1.20 + VR 2
⇒ LM 2eN aV + V fOP 1/ 2
Ε =
N∈ Q
d
1.20 + 1 max bi R
VR 2 = 18.6 V
Assuming that Vbi << VR , then
91
∈ Ε max
2
b
(11.7) 8.85x10 −14 106 gb g 2 or
Vbi = 0.557 V
2b1.6 x10 g(10)
Nd = = −19
2 eVR
(b)
or
=M
1/ 2
N e H N KH N + N KQ
−3
N d = 3.24 x10 cm
17 bi d
xp
a a d
7.26 L 2(11.7)b8.85x10 g(0.557)

=M
−14
x n = 0.1W = 0.1 xn + x p b g N 1.6 x10

−19
which yields
×G
F 10 IJ F 1 I OP 14 1/ 2
xp
xn
N
= d =9
Na
H 5x10 K H 10 + 5x10 K Q 15 14 15
or
We can write
FG N N IJ
−6
x p = 5.32 x10 cm
Vbi = Vt ln
H n K
a d
2 Also
L 9 N OP
i
x =M
1/ 2
N e H N KH N + N KQ
bi a
= (0.0259 ) ln M
2
n
a
NM b1.5x10 g QP
d a d
L 2(11.7)b8.85x10 g(0.557)
10 2
−14
=M
We also have
CT 3.5 x10
−12 N 1.6 x10
−19
C ′j =
A
=
5.5 x10
−4
= 6.36 x10
−9
F / cm
2
×G
F 5x10 IJ F 1 I OP 15 1/ 2
so H 10 K H 10 + 5x10 K Q 14 14 15
LM e ∈ N N OP 1/ 2
or
−9
6.36 x10 = a d
−4
x n = 2.66 x10 cm
bi R a d
Which becomes (c)

4.05 x10
−17 For x n = 30 µm , we have
b1.6x10 g(11.7)b8.85x10 g N a9 N f
−19 −14
30 x10 = M
L 2(11.7)b8.85x10 gaV + V f −14
2aV + V fa N + 9 N f
a a −4 bi R
=
bi R a a N 1.6 x10
−19
or
×G
F 5x10 IJ F 1 I OP 15 1/ 2
H 10 K H 10 + 5x10 K Q
−32
7.46 x10 Na
aV + V f
−17
4.05 x10 = 14 14 15
bi R
which becomes
If VR = 1.2 V , then by iteration we find 9 x10 = 1.27 x10 aV + V f
−6 −7
bi R
−3
N a = 9.92 x10 cm
14
We find
Vbi = 0.632 V VR = 70.3 V
−3
N d = 8.93 x10 cm
15
7.28
+ −3
An n p junction with N a = 10 cm ,
14
7.27
FG N N IJ (a)
A one-sided junction and assume VR >> Vbi , then
(a) Vbi = Vt ln
H n K
a d
LM 2 ∈V OP
2
1/ 2
i
Lb5x10 gb10 g OP
= (0.0259 ) ln M
15 14 xp =
N eN Q
R
MN b1.5x10 g PQ
a
2
10
so
92
b50x10 g = 2(11b1..67)xb108.85gbx1010 ggV

−14 +
2 For the p n junction
F 1 I ≈ 1 LM 2aV + V f OP
−4 R
−19 14 2
which yields H CK A N e ∈ N Q 2
bi
d
R
VR = 193 V so that
(b) ∆a1 C f
2
1 2
xp FG N IJ
Nd ∆VR
= ⋅
A
2
e ∈ Nd
=
HN K ⇒ xn = x p a
x N
n a d We have
so
F 10 IJ ⇒ F 1 I = 7.69 x10 2
For VR = 0 ,
H CK
23
x = b50 x10 gG
14
H 10 K
−4
F 1 I = 6.61x10
n 16
2
= 6V ,
H CK
24
or For VR
x n = 0.5 µm
Then, for ∆VR = 6 V ,
(c)
Ε max =
a
2 Vbi + VR f= 2(193) ∆1C a f = 5.84 x10
2 24
−4 We find
W 50.5 x10
or 2 1
Ε max = 7.72 x10 V / cm
4
Nd =
A e∈
2
⋅
FG ∆a1 Cf IJ 2
H ∆V K R
7.29 2
(a) Vbi
Lb10 gb5x10 g OP
= (0.0259 ) ln M
18 15 =
b5x10 g b1.6x10 g(11.7)b8.85x10 g
−5 2 −19 −14
MN b1.5x10 g PQ 10 2
1
or
×
FG 5.84 x10 IJ 24
Vbi = 0.796 V H 6 K
C = AC ′ = A M
L e ∈ N N OP 1/ 2
so that
a d
−3
N d = 4.96 x10 ≈ 5 x10 cm
15 15
bi R a d
L b1.6x10 g(11.7)b8.85x10 g
= b5 x10 gM
−19 −14 Now, for a straight line
y = mx + b
2aV + V f
−5
N bi R
∆1C a f 2
5.84 x10
24
b10 gb5x10 g OP 18 15
1/ 2 m=
∆VR
=
6
×
b10 + 5x10 g Q 18 15
F 1 I = 7.69 x10 = b 2
At VR = 0 ,
H CK
23
or
C = b5 x10 gM
L 4.121x10 OP −16 1/ 2
Then
N aV + V f Q F 1 I = FG 5.84 x10 IJ ⋅V + 7.69 x10
−5
2 24
H CK H 6 K
23
bi R
R
For VR = 0 , C = 114
. pF
For VR = 3 V , C = 0.521 pF F 1I = 0, 2
For VR = 6 V , C = 0.389 pF
Now, at
H CK
We can write
0=G
F 5.84 x10 IJ ⋅V + 7.69 x10 24
LM 2aV + V fa N + N f OP H 6 K
23
F 1I 2
1
R
H CK =
A
2
bi
N e ∈N N Q
R
a
a
d
d
which yields
VR = −Vbi = −0.790 V
93
or
Vbi ≈ 0.796 V
L b2.04 x10 g N OP
0.95 = (0.0259 ) ln M
17
H
(b) MN b15. x10 g PQ 10 2
Vbi = (0.0259 ) ln
LM b10 gb6x10 g OP
18 16 which yields
MN b1.5x10 g PQ
−3
N H = 9.38 x10 cm
18
10 2
or
7.31
Vbi = 0.860 V Computer Plot
b gLMN b1.6x10 2ga(V11.7+)Vb8f.85x10 g

−19 −14
−5
C = 5 x10 7.32
bi R
FG N N IJ
b10 gb6x10 g OP 18 16 1/ 2
(a) Vbi = Vt ln
H n K
aO
2
dO
×
b10 + 6x10 g Q
i
18 16
(c) p-region
or dΕ ρ ( x ) − eN aO
= =
L 4.689 x10 OP
C = b5 x10 gM
−5
−15 1/ 2
dx ∈ ∈
N V +V Q bi R
or
Ε=
− eN aO x
+ C1
Then
For VR = 0 , C = 3.69 pF ∈
We have
For VR = 3 V , C = 1.74 pF − eN aO x p
Ε = 0 at x = − x p ⇒ C1 =
For VR = 6 V , C = 1.31 pF ∈
Then for − x p < x < 0
7.30
C′ =
C
=
1.3 x10
−12
= 1.3 x10
−7
F / cm
2
Ε=
− eN aO
∈
bx + x g p
−5
A 10
n-region, 0 < x < xO
(a) For a one-sided junction
L e ∈ N OP
C′ = M
1/ 2 dΕ 1
=
ρ( x )
=
eN dO
N 2aV + V f Q
L
dx ∈ 2∈
bi R or
where N L is the doping concentration in the eN dO x
low-doped region. Ε1 = + C2
2∈
We have Vbi + VR = 0.95 + 0.05 = 1.00 V
n-region, x O < x < xn
Then
dΕ 2 ρ( x )
b1.3x10 g −7 2
dx
=
∈
=
eN dO
∈
=
b1.6x10 g(11.7)b8.85x10 g N
−19 −14
L
or
eN dO x
2(1) Ε2 = + C3
which yields ∈
−3 We have Ε 2 = 0 at x = xn , then
N L = 2.04 x10 cm
17
− eN dO xn
(b) C3 =
FG N N IJ ∈
Vbi = Vt ln
H n K
L H
2 so that for x O < x < xn
i
where N H is the doping concentration in the

high-doped region.
Ε2 =
− eN dO
∈
ax − xf
n
So We also have
94
Ε 2 = Ε 1 at x = x O
Then
φ =
eN d
2∈
ax + x f O
2
eN dO xO
+ C2 =
− eN dO
xn − x O a f At x = −1 µm
2∈ ∈
φ1
b1.6x10 gb5x10 g (−1 + 2)x10
−19 15
−4
2(11.7 )b8.85x10 g
or =
F I
−14
− eN dO x
C2 =
∈
xn − O
2 H K or
φ 1 = 3.86 V
Then, for 0 < x < xO ,
Potential difference across the intrinsic region
eN dO x eN dO Fx − x I φ i = Ε (0) ⋅ d = 7.73x10 b gb2 x10 g
H 2K
4 −4
Ε1 = − n
O
2∈ ∈ or
φ i = 15.5 V
7.33 By symmetry, potential difference across the p-
d φ ( x) − ρ( x) − dΕ ( x )
2
region space charge region is also 3.86 V . The
(a) = =
dx
2
∈ dx total reverse-bias voltage is then
For −2 < x < −1 µm , ρ( x ) = + eN d VR = 2(3.86) + 15.5 ⇒ VR = 23.2 V
So
dΕ eN d eN d x 7.34
= ⇒Ε= + C1 (a) For the linearly graded junction,
dx ∈ ∈
ρ( x ) = eax ,
At x = −2 µm ≡ − xO , Ε = 0
Then
So
dΕ ρ( x ) eax
− eN d xO eN d xO = =
0= + C1 ⇒ C1 = dx ∈ ∈
∈ ∈ Now
Then
z
2
eax
ea x
Ε=
eN d
∈
x + xO a f Ε=
∈
dx = ⋅
∈ 2
+ C1
At x = 0 , Ε (0) = Ε x = −1 µm , so a f At x = + xO and x = − xO , Ε = 0
So
Ε ( 0) =
eN d
( −1 + 2) x10 −4 FG x IJ + C ⇒ C = −ea FG x IJ
ea
2 2
∈H 2K ∈ H 2K
∈ 0= O O
b1.6x10 gb5x10 g b1x10 g

1 1
−19 15
−4
Then
(11.7)b8.85x10 g
= −14
which yields
Ε=
2∈
ea
bx − x g 2 2
O
Ε (0) = 7.73 x10 V / cm

4
(b)
(c)
φ ( x ) = − z Εdx =
LM − x ⋅ xOP + C
− ea x
3
2
2∈N 3 Q
Magnitude of potential difference is O 2
φ = Εdx = z
eN d
∈
x + xO dx za f Set φ = 0 at x = − x , then O
− ea L − x O
eN d FG x + x ⋅ xIJ + C
2
0=
2∈N 3M
3
+x P+C ⇒C =
O
eax
3 O
3
=
∈ H 2 K O 2
Q O
3∈
2 2
Then
− ea F x I eax
Let φ = 0 at x = − xO , then
FG x − x IJ + C ⇒ C = eN x G − x ⋅ xJ +
3 3
φ( x) =
2∈H 3 K 3∈
2 2 2 O
eN d
∈ H 2 K
O
0= O 2 d O
O 2 2
2∈
Then we can write
95
7.35
We have that
C′ = M
L ea ∈ OP 2 1/ 3
N12aV + V f Q
bi R
then
b7.2 x10 g
−9 3
L ab1.6x10 g (11.7)b8.85x10
=M
−19 −14
g OP
2
MN 12(0.7 + 3.5) PQ
which yields
−4
a = 11
20
. x10 cm
96
Chapter 8
Problem Solutions 8.4
The cross-sectional area is
−3
8.1 I 10 x10 −4
A= = = 5 x10 cm
2
In the forward bias
F I eV
J
We have
20
H K
I f ≈ I S exp
kT FG V IJ ⇒ 20 = J expF 0.65 I
Then J ≈ J S exp
HV K
D
H 0.0259 K S
F eV I t
I I
exp
H kT K = expL e aV − V fO
1
so that
F eV I MN kT PQ
f1 −10
= ⋅ J S = 2.52 x10
S 2
1 2
A / cm
I I
f2
exp
H kT KS 2
We can write
LM 1 ⋅ Dn 1 Dp OP \
or J S = eni
2
+ ⋅
F kT I lnFG I IJ NN a
τ nO Nd τ pO Q
H e K HI K
f1
V −V =
1 2 We want
f2
(a) 1 Dn
⋅
If1 Na τ nO
For = 10 ⇒ V1 − V2 = 59.9 mV ≈ 60 mV = 0.10
If2 1 Dn 1 Dp
⋅ + ⋅
(b) Na τ nO Nd τ pO
If1 or
For = 100 ⇒ V1 − V2 = 119.3 mV ≈ 120mV
If2 1 25
⋅ −7
Na 5 x10
8.2 1 25 1 10
LM F eV I − 1OP ⋅ + ⋅
N H kT K Q
−7 −7
I = I exp S
Na 5 x10 Nd 5 x10
3
or we can write this as 7.07 x10
= = 0.10
I F eV I 7.07 x10 +
Na
b4.47 x10 g
H kT K
3 3
+ 1 = exp
I Nd
S
so that which yields
F kT I lnFG I + 1IJ Na
= 14.24
V =
H e K HI K S
Now
Nd
In reverse bias, I is negative, so at

I
= −0.90 , we have
J S = 2.52 x10
−10
b
= 1.6 x10
−19
gb1.5x10 g 10 2
IS LM 1
× ⋅
25
+
1
⋅
10 OP
or
V = (0.0259 ) ln(1 − 0.90) ⇒ N
We find
(14.24) N d
5 x10
−7
Nd 5 x10
−7
Q
V = −59.6 mV −3
N d = 7.1x10 cm
14
and
8.3 −3
N a = 1.01x10 cm
16
Computer Plot
101
8.5
(a) Jn bσ σ g n p
Jn
eDn n pO
Ln
Jn + J p
=
bσ σ g + 4.90
n p
=
Jn + J p eDn n pO eD p pnO
+ 8.6
Ln Lp For a silicon p n junction,
+
2
Dn ni 1 Dp
⋅ I S = Aeni ⋅
2
τ nO Na Nd τ pO
=
Dn
2
ni Dp ni
2
τ nO
⋅
Na
+
τ pO
⋅
Nd b gb1.6x10 gb15. x10 g ⋅ 101
= 10
−4 −19 10 2
16
10
12
−7
1 or
=
D pτ nO FG N IJ I S = 3.94 x10
−15
A
1+ ⋅
HN K
a
Dnτ pO Then
d
FG V IJ = b3.94 x10 g expF 0.50 I

We have
HV K H 0.0259 K
−15
I D = I S exp D
Dp µp 1 τ nO 1 t
= = and =
Dn µ n 2.4 τ pO 0.1 or
−7
so I D = 9.54 x10 A
Jn 1
Jn + J p
=
1 FG N IJ
1 8.7
0.1 H N K
1+ ⋅ a
We want
2.4 d Jn
or = 0.95
Jn + J p
Jn 1
Jn + J p
=
1 + (2.04)
FG N IJ eDn n pO Dn
HN K
a
Ln Ln N a
d = =
eDn n pO eD p pnO Dn Dp
(b) + +
Using Einstein’s relation, we can write Ln Lp Ln N a Lp N d
eµ n
2
ni Dn
⋅
Jn Ln Na Ln
= =
Jn + J p eµ n ni
2
eµ p 2
ni Dn D p N a
⋅ + ⋅ + ⋅
Ln Na Lp Nd Ln Lp N d
eµ n N d We obtain
=
eµ n N d +
Ln
Lp
⋅ eµ p N a Ln = Dnτ nO = b
(25) 0.1x10 −6 ⇒ g
Ln = 15.8 µm
We have
σ n = eµ n N d and σ p = eµ p N a Lp = D pτ pO = b
(10) 0.1x10 −6 ⇒ g
Also L p = 10 µm
Ln Dnτ nO 2.4 Then
= = = 4.90
Lp Dpτ pO 0.1
Then
102
25 FG V IJ
I = I S exp
HV K
D
15.8
0.95 =
25 10 N a FG IJ F 0.5 I
t
H K = b4.48 x10 g exp

+ ⋅
H 0.0259 K
−15
15.8 10 N d
which yields or
Na I = 1.08 µA
= 0.083
Nd (c)
The hole current is proportional to
8.8 1 Dp
FG N IJ I P ∝ eni ⋅ A ⋅
2
Nd τ pO
(a) p-side: E Fi − E F = kT ln
Hn K
a
F 5x10 IJ ⇒
i
b
= 1.6 x10
−19
gb1.5x10 g b10 gFH 101 IK 10 2 −4 10.9
= (0.0259 ) lnG
15
17 −7
10
H 15. x10 K 10
or
−16
E Fi − E F = 0.329 eV I P ∝ 3.76 x10 A
Also Then
−16
IP 3.76 x10 IP
− E = kT lnG
F N IJ I
=
4.48 x10
−15
⇒
I
= 0.0839
Hn K
d
n-side: E F Fi
i
F 10 IJ ⇒
= (0.0259 ) lnG
17 8.9
LM FG V IJ − 1OP
H 15. x10 K 10
I = I S exp
N HV K Q
a
E F − E Fi = 0.407 eV t
+
For a p n diode,
(b)
We can find FG eD p IJ = AF e D ⋅ n I 2
H L K GH τ N JK
p nO p
Dn = (1250)(0.0259 ) = 32.4 cm / s
2 IS = A i
p pO d
Dp = (420)(0.0259) = 10.9 cm / s
L 10 b2.4 x10 g O
2
2
= b10 gMb1.6 x10 g PP

13
Now −4
⋅
−19
JS = en M
2
L 1 D + 1 D OP n p
MN 10 10
Q −6 16
NN τ N τ Q
a nO d pO
or
I S = 2.91x10
−9
A
= b1.6 x10 gb15. x10 g
−19 10 2
(a)
L 1 32.4 + 1
×M
10.9 OP For Va = +0.2 V ,
or
N 5x10 10 10 15 −6 17
10
−7
Q b
I = 2.91x10
−9
gLNMexpFH 0.0259
0.2 I O
K − 1QP
−11 or
J S = 4.48 x10
2
A / cm
I = 6.55 µA
Then
I S = AJ S = 10b gb4.48x10 g
−4 −11 (b)
For Va = −0.2 V ,
gLMNexpFH 0.−0259
0.2 I O
or
I S = 4.48 x10
−15
A b
I = 2.91x10
−9
K − 1PQ
We find −9
≈ −2.91x10 A
or I = − I S = −2.91 nA
103
and
8.10
+
For an n p silicon diode
Ln = Dnτ nO = b
(35) 0.4 x10 −6 ⇒ g
Ln = 37.4 µm
1 Dn
I S = Aeni ⋅
2
Also
Na τ nO
ni
2
b1.5x10 g 10 2
b10 gb1.6x10 gb15. x10 g

−3
n pO = = = 4.5 x10 cm
4
−4 −19 10 2
15
25 Na 5 x10
= −6
10
16
10 Then
or eDn n pO b1.6x10 g(35)b4.5x10 g −19 4
(a)
I S = 1.8 x10
−15
A J nO =
Ln
=
b37.4 x10 g −4
or
For Va = 0.5 V −11
J nO = 6.74 x10
2
A / cm
FG V IJ = b18. x10 g expF 0.5 I
H 0.0259 K
−4
For A = 10 cm , then
2
HV K
−15
I D = I S exp a
−15
t
I nO = 6.74 x10 A
or
(c)
FG N N IJ
−7
I D = 4.36 x10 A
Vbi = Vt ln
H n K
a d
(b) 2
For Va = −0.5 V i
I D = − I S = −18
. x10
−15
A Lb5x10 gb10 g OP
= (0.0259 ) ln M
15 15
8.11
MN b15. x10 g PQ 10 2
or
(a) We find
F kT I = (480)(0.0259) = 12.4 cm / s Vbi = 0.617 V
Dp = µ p
HeK Then for
2
1
and Va = Vbi = 0.309 V
2
D τ = (12.4 )b0.1x10 g ⇒
−6
Lp = We find
F I
p pO
. µm
L p = 111 eVa
Also
pn = pnO exp
H K
kT
b15. x10 g 2
= b2.25 x10 g exp
F 0.309 I
H 0.0259 K
2 10 5
ni −3
pnO = = = 2.25 x10 cm
5
15
Nd 10
or
Then −3
pn = 3.42 x10 cm
b1.6x10 g(12.4)b2.25x10 g
10
−19 5
eD p pnO
(d)
J pO =
Lp
=
b111. x10 g −4
The total current is
or
J pO = 4.02 x10
−10
A / cm
2
b g FH eVkT IK
I = I pO + I nO exp a
= b 4.02 x10 + 6.74 x10 g exp

F 0.309 I
H 0.0259 K
−4
2 −14 −15
−14
I pO = 4.02 x10 A
or
(b) I = 7.13 x10
−9
A
We have
F kT I = (1350)(0.0259) = 35 cm / s The hole current is
Dn = µ n
HeK
2
104
F eV I expLM −a x − x f OP b1.6x10 g(8)b3.81x10 g expF −3 I

−19 14
I p = I pO exp
H kT K N L Q
a
p
n
Jp =
2.83 x10 H 2.83K
−4
The electron current is given by or

J p = 0.597 A / cm
2
In = I − I p
= 7.13x10 − 4.02 x10

−9
b g −14 (c)
We have
F 0.309 I expLM −a x − x f OP eDn n pO F eV I
× exp
H 0.0259 K N L Q p
n
J nO =
Ln
exp
H kT K a
1 We can determine that

At x = x n + Lp −3
n pO = 4.5x10 cm and Ln = 10.7 µm
3
2
−9
I n = 7.13 x10 − 6.10 x10 b −9
g expFH −21IK Then
b1.6x10 g(23)b4.5x10 g expF 0.610 I
−19 3
or
−9
J nO =
10.7 x10 H 0.0259 K
−4
I n = 3.43 x10 A or
J nO = 0.262 A / cm
2
8.12 We can also find

(a) The excess hole concentration is given by J pO = 1.72 A / cm
2
δpn = pn − pnO
LMexpF eV I − 1OP expFG − x IJ

Then, at x = 3 µm ,
= pnO
N H kT K Q H L K
a
a f
J n 3 µm = J nO + J pO − J p 3 µm a f
p
= 0.262 + 1.72 − 0.597
We find or
pnO =
ni
2
=
b15. x10 g = 2.25x10 cm10 2
4 −3
a f
J n 3 µm = 1.39 A / cm
2
16
Nd 10
and 8.13
Lp = D pτ pO = b
(8) 0.01x10 −6 ⇒ g (a) From Problem 8.9 (Ge diode)
Low injection means
pn (0) = (0.1) N d = 10 cm
15 −3
L p = 2.83 µm
Then Now
b
δpn = 2.25x10
4
g pnO =
2
ni
=
b2.4 x10 g 13 2
= 5.76 x10 cm
10 −3
LM F 0.610 I − 1OP expF − x I Nd 10

16
N H 0.0259 K Q H 2.83x10 K
× exp −4 We have
FG V IJ
or
pn (0) = pnO exp
F − x I cm HV K
a
H 2.83x10 K
−3
δp = 3.81x10 exp
14 t
n −4
or
(b) L p (0) OP
V = V ln M n
We have
a f
d δpn
a
Np Q
t
nO
J p = − eD p
= (0.0259 ) lnG
F 10 IJ 15
b
eD p 3.81x10
dx
g expF − x I 14 H 5.76x10 K 10
=
b2.83x10 g H 2.83x10 K
−4 −4
or
Va = 0.253 V
−4
At x = 3 x10 cm , (b)
For Problem 8.10 (Si diode)
105
n p (0) = (0.1) N a = 10 cm
−3
(b) Va = 0.4 V , N p = 8.46 x10
15 5
n pO =
ni
2
=
b1.5x10 g 10 2
= 2.25 x10 cm
4 −3
(c) Va = 0.5 V , N p = 4.02 x10
7
16
Na 10 Similarly, the total number of excess holes in the
Then n-region is found to be:
LM n (0) OP eVa LM F I OP
Va = Vt ln
Nn Q
p N n = AL p pnO exp
kT
−1
N H K Q
pO
We find that
F 10 IJ
= (0.0259 ) lnG
15
. µm
Dp = 12.4 cm / s and L p = 111
2
H 2.25x10 K 4
Also
or
Va = 0.635 V pnO =
b1.5x10 g 10 2
= 2.25x10 cm
4 −3
16
10
Then
gLMNexpFH eVkT IK − 1OPQ

8.14
The excess electron concentration is given by b
N n = 2.50 x10
−2 a
δn p = n p − n pO
So
LMexpF I − 1OP expFG − x IJ
eVa (a) Va = 0.3 V , N n = 2.68 x10
3
= n pO
N H kT K Q H L K n
(b) Va = 0.4 V , N n = 1.27 x10
5
The total number of excess electrons is
z (c) Va = 0.5 V , N n = 6.05 x10

6
∞
N p = A δn p dx
0
8.15
We may note that
F eV I ∝ expFG − E IJ expF eV I
z expFGH −Lx IJK dx = − L expFGH −Lx IJK H kT K H kT K H kT K
∞ ∞ g
I ∝ ni exp
2 a a
n
= Ln
0 n n 0
Then
Then
LM F eV I − 1OP I ∝ expG
F eV − E IJ
H kT K
a g
N = AL n exp
N H kT K Q
a
p n pO
so
We can find
expG
F eV − E IJ
Dn = 35 cm / s and Ln = 59.2 µm
H kT K
2 a1 g1
I
Also =
F eV − E IJ
1
n pO =
ni
2
=
b15. x10 g 10 2
= 2.81x10 cm
4 −3
I 2
expG
H kT K
a2 g2
15
Na 8 x10
or
Then
b gb59.2 x10 gb2.81x10 g I F eV − eV − E + E IJ
= expG
H K
1 a1 a2 g1 g2
−3 −4
N p = 10
4
I kT
LM F eV I − 1OP 2
N H kT K Q
× exp a We have
10 x10
= expG
F 0.255 − 0.32 − 0.525 + E IJ
−3
H K
g2
or
LM F eV I − 1OP
−6
10 x10 0.0259
N H kT K Q
= 0.166 exp or
a
Np
10 = expG
F E − 0.59 IJ
H 0.0259 K
3 g2
Then we find the total number of excess
electrons in the p-region to be:
(a) Va = 0.3 V , N p = 1.78 x10
4 Then
106
E g 2 = 0.59 + (0.0259) ln 10 b g 3
8.17
which yields Computer Plot
E g 2 = 0.769 eV
8.18
One condition:
8.16
F eV I
(a) We have
LM 1 OP If
J S exp
H kT K = expF eV I = 10
a
Dn 1 Dp =
H kT K a 4
I S = Aeni +
2
NN a
τ nO Nd τ pO Q or
Ir J S
which can be written in the form

kT Va 0.5
I S = C ′ni =
b g lnb10 g =
2
4 4
e ln 10
F T I expFG − E IJ 3
= C ′N CO N VO
H 300 K H kT K or
g
kT FTI
or = 0.05429 = (0.0259 )
H 300 K
F − E IJ
= CT expG
e
which yields
H kT K
3 g
IS
T = 629 K
Second conditon:
(b)
Taking the ratio FG eD n + eD p IJ
FG − E IJ H L L K
n pO p nO
IS = A
F T I H kT K
g n p
exp
IS2
=G J ⋅
3
= Aen G
F D + D IJ
H T K expFG − E IJ
2 2
HLN L N K
2 n p
I S1 i
H kT K
1 g
n a p d
= AeN N M
L 1 D + 1 D OP expFG − E IJ
F T I L F 1 − 1 IJ OP
3
= G J ⋅ exp M + E G
C
N N τ N τ Q H kT K
V
n p g
H T K N H kT kT K Q
2
g a nO d pO
1 1 2
which becomes
1 10 = b10 gb1.6 x10 gb 2.8 x10 gb1.04 x10 g
−6 −4 −19 19 19
For T1 = 300 K , kT1 = 0.0259 , = 38.61
kT1
×G
F 1 25 + 1 10 IJ expFG − E IJ
H 5x10 10 10 10 K H kT K
g
1
For T2 = 400 K , kT2 = 0.03453 , = 28.96 18 −7 15 −7
kT2
or
(i) Germanium, E g = 0.66 eV
FG + E IJ = 4.66x10
H kT K
g
F I exp (0.66)(38.61 − 28.96)

10
3 exp
IS2 400
I S1
=
H 300 K For E g = 110
. eV ,
or Eg 110
.
IS2
I S1
= 1383
kT =
b g lnb4.66x10 g
ln 4.66 x10
10
= 10
or
(ii) Silicon, E g = 112
. eV FTI
IS2 F 400 I ⋅ exp (112. )(38.61 − 28.96)
3
kT = 0.04478 eV = (0.0259 )
H 300 K
I S1
=
H 300 K Then
T = 519 K
or This second condition yields a smaller
IS2 temperature, so the maximum temperature is
= 117
5
. x10 T = 519 K
I S1
107
8.19 LM FG V IJ − 1OP
N HV K Q
a
(a) We can write for the n-region pnO exp
d δpn
2
a f − δp n
=0
δp = n
FW I
t
2 sinh G J
2 2
dx Lp
HL K
n
The general solution is p
g b g b
δpn = A exp + x Lp + B exp − x L p R La x + W − xf OP − expLM −a x + W − xf OPUV
× Sexp M n n n n
The boundary condition at x = x gives T N L Q N L QW p p
L FV I O
n
or finally,
δp a x f = p MexpG J − 1P FG x + W − x IJ
N HV K Q
a
n n nO
L FV I O H L K
n n
t sinh
= A expb + x L g + B expb − x L g δp = p MexpG J − 1P ⋅
N H V K Q sinhFG W IJ
a p
n p n p
n nO
and the boundary condition at x = x + W gives

HL K
t n
δp a x + W f = 0
n n
= A exp a x + W f L + B exp −a x + W f L
n n n
(b)
n n p n n p
d aδp f
From this equation, we have J = − eD n
A = − B exp −2a x + W f L
p p
dx x = xn
n n p
L FV I O
− eD p MexpG J − 1P
N HV K Q
Then, from the first boundary condition, we a
p nO
obtain
L FV I O =
FW I
t
p MexpG J − 1P sinhG J
N HV K Q
a
HL K
n
nO
t
= B exp −a x + 2W f L + B expb − x L g
p
n n p n p F −1I F x + W − x IJ
× G J coshG
= B expb − x L g 1 − expb −2W L g HL K H L K
n n
n p n p p p x = xn
We then obtain Then

L FV I O
p MexpG J − 1P
eD p pnO FG W IJ ⋅ LexpFG V IJ − 1O
N HV K Q H L K MN H V K PQ
a
nO Jp = coth n a
Lp
expb − x L g 1 − expb −2W L g
B= t p t
n p n p
which can be written in the form 8.20

L FV I O
p MexpG J − 1P ⋅ exp a x + W f L
FG V IJ
N HV K Q HV K
a
I D ∝ ni exp
2 D
nO n n p
expbW L g − expb −W L g
B= t t
n p n p
For the temperature range 300 ≤ T ≤ 320 K ,
Also neglect the change in N C and N V
L FV I O
− p MexpG J − 1P ⋅ exp −a x + W f L
So
N HV K Q
a
−Eg FG IJ F I
eVD
H K H K
nO n n p
I D ∝ exp ⋅ exp
expbW L g − expb −W L g
A= t
kT kT
The solution can now be written as

n p n p
∝ exp M
L −b E − eV g OP g D
N kT Q
Taking the ratio of currents, but maintaining I D
a constant, we have
108
LM −b E − eV
exp
g D1 g OP Cd =
b2 x10 gb10 g ⇒ −3 −6
N kT Q⇒ 2(0.0259 )
1=
L −b E − eV g OP
1
exp M
−8
g D2 Cd = 3.86 x10 F
N kT 2 Q Then
E g − eVD 1 E g − eVD 2 Y = g d + jωCd
= or
kT1
We have
kT2
Y = 0.0772 + jω 3.86 x10 b −8
g
T = 300 K , VD1 = 0.60 V and
kT1 8.23 For a p n diode
+
kT1 = 0.0259 eV , = 0.0259 V

e I DQ I DQτ pO
T = 310 K gd = , Cd =
Vt 2Vt
kT2
kT2 = 0.02676 eV , = 0.02676 V Now
e −3
10
T = 320 K gd = = 3.86 x10
−2
S
kT3 0.0259
kT3 = 0.02763 eV , = 0.02763 V and
So, for T = 310 K ,
e
C =
b10 gb10 g = 1.93x10
−3 −7
−9
F
2(0.0259 )
d
. − 0.60
112 . − VD 2
112
=
0.0259 0.02676 Now
which yields 1 1 g d − jωCd
Z= = =
VD 2 = 0.5827 V Y g d + jωCd g d + ω Cd
2 2 2
For T = 320 K , We have ω = 2π f ,

. − 0.60
112 . − VD 3
112 We find:
= f = 10 kHz : Z = 25.9 − j 0.0814
0.0259 0.02763
which yields f = 100 kHz : Z = 25.9 − j 0.814
VD 3 = 0.5653 V f = 1 MHz : Z = 23.6 − j 7.41
f = 10 MHz : Z = 2.38 − j 7.49
8.21
Computer Plot
8.24
(b)
8.22 Two capacitances will be equal at some forward-
−3
e 2 x10 bias voltage.
gd = ⋅ ID = For a forward-bias voltage, the junction
kT 0.0259
capacitance is
or
g d = 0.0772 S
C = AM
L e ∈ N N OP 1/ 2
N 2aV − V fa N + N f Q
a d
j
Also
F e I bI
bi a a d
C =
1
2 H kT K
τ pO + I nOτ nO g The diffusion capacitance is
F 1 IJ b I τ + I τ g
C =G
d pO
We have
−6
d
H 2V K t
pO pO nO nO
τ pO = τ nO = 10 s where
I pO + I nO = 2 x10
−3
A Aen D FV I
⋅ expG J
2
HV K
p
I = i a
Then pO
N τ d pO t
109
and
FV I Cd = b3.278x10 gb10 g
1 −16 −7
⋅ expG J
2(0.0259 )
2
Aeni Dn
I nO =
HV K
a
gb10 g ⋅ expFGH VV IJK

Na τ nO
We find
t
b
+ 3.377 x10
−15 −6 a
Dp = (320)(0.0259) = 8.29 cm / s
2 t
or
Dn = (850)(0.0259 ) = 22.0 cm / s
2
FG V IJ
HV K
−20
Cd = 6.583 x10 ⋅ exp a
and
Lb10 gb5x10 g OP = 0.7363 V
V = (0.0259 ) ln M
17 15
We want to set C j = Cd
t
bi
MN b1.5x10 g PQ 10 2
So
b10 gLMN 30..945 x10 O

−16 1/ 2
Now, we obtain
L b1.6x10 g(11.7)b8.85x10 g
C = b10 g M
−19 −14
−4
P
7363 − V Q
2aV − V f
−4 a
j
N F V I
H 0.0259 K
bi a −20
= 6.583 x10 ⋅ exp a
b5x10 gb10 g OP 15 17 1/ 2
×
b5x10 + 10 g Q 15 17
Va = 0.463 V
or At this voltage,
C = b10 g M
L 3.945x10 OP −16 1/ 2
C j = Cd ≈ 3.8 pF
N aV − V f Q
−4
j
bi a
We also obtain 8.25

b10 gb1.6x10 gb15. x10 g
−4 −19 10 2
8.29
+
For a p n diode, I pO >> I nO , then
I = pO
10
17
10
−7
FG 1 IJ b I τ g
FG V IJ Cd =
H 2V K pO pO
× exp
HV K
a t
Now
t
or τ pO −6
= 2.5 x10
FV I
I = 3.278 x10 expG J
2Vt
F/A
HV K
−16 a
pO
Then
d i
t −6
Also τ pO = 2(0.0259) 2.5x10
I =
b10 gb1.6x10 gb1.5x10 g
−4 −19 10 2
22 or
−7
nO
5 x10
15
10
−6 τ pO = 1.3x10 s
FG V IJ At 1 mA ,
× exp
HV K b gb10 g ⇒
a
−6 −3
t
Cd = 2.5x10
or Cd = 2.5 x10
−9
F
FV I
expG J
HV K
−15
I nO = 3.377 x10 a
8.26
F e I Ab I
t
We can now write

(a) Cd =
1
2 H kT K
pO
τ pO + I nOτ nO g
+
For a one-sided n p diode, I nO >> I pO , then
1 F e I Aa I τ f
2 H kT K
Cd = nO nO
110
so 0.10
1 F 1 I b10 ga I fb10 g Rn =
b10 gb1.6x10 g(1350)b10 g
2 H 0.0259 K
−12 −3 −7 −2 −19 15
10 = nO
or
or
Rn = 46.3 Ω
I nO = I D = 0.518 mA
The total series resistance is
(b) R = R p + Rn = 26 + 46.3 ⇒
eDn n pO FG V IJ R = 72.3 Ω
I nO = A
HV K
a
exp
Ln t (b)
We find V = IR ⇒ 0.1 = I ( 72.3)
Ln = Dnτ nO = 15.8 µm and or
2
I = 1.38 mA
ni −3
n pO = = 2.25 x10 cm
4
Na 8.28
Then ρ n L( n ) ρ p L( p )
0.518 x10
−3 R= +
A(n) A( p)
b1.6x10 g(25)b2.25x10 gb10 g expFG V IJ
−19 4 −3
b g + (0.1)b10 g
(0.2) 10 −2
HV K
−2
= −4
a
15.8 x10 t
= −5 −5
2 x10 2 x10
or
F V I or
R = 150 Ω
H 0.0259 K
−3 −14
0.518 x10 = 5.70 x10 exp a
We can write
We find
FG I IJ
Va = 0.594 V V = I D R + Vt ln
HI K
D
(c) S
F e II 1 (a) (i) I D = 1 mA
gd =
H kT K D
=
rd
⇒
V = 10 b g(150) + (0.0259) lnFGH 1010 IJK
−3
−10
−3
0.0259
rd = −3 or
0.518 x10
V = 0.567 V
or
rd = 50 Ω (ii) I D = 10 mA
b g(150) + (0.0259) lnFGH 1010x10 IJK

−3
−3
8.27 V = 10 x10 −10
(a) p-region
or V = 1.98 V
ρpL L L
Rp =
A
= =
σ p A A eµ p N a b g (b)
For R = 0
so (i) I D = 1 mA
Rp =
b10 gb1.6x10 g(480)b10 g
0.2
V = (0.0259 ) ln
FG 10 IJ ⇒
−3
or
−2 −19 16
H 10 K−10
V = 0.417 V
R p = 26 Ω
(ii) I D = 10 mA
n-region
ρn L L L
V = (0.0259 ) ln
FG 10x10 IJ ⇒ −3
Rn =
A
=
σnA
=
a
A eµ n N d f H 10 K −10
so V = 0.477 V
111
8.29 pnO =
b1.8x10 g 6 2
= 3.24 x10 cm
−4 −3
16
1 10
rd = 48 Ω = ⇒ g d = 0.0208 Also
gd
We have Ln = b g
Dnτ nO = (200) 10 −8 = 14.2 µm
L = D τ = (6)b10 g = 2.45 µm
e
⋅ I D ⇒ I D = (0.0208)(0.0259 )
−8
gd = p p pO
kT
or Then
I D = 0.539 mA
J =
b1.6x10 g(200)b3.24 x10 g
S
−19 −4
−4
Also 14.2 x10
FG V IJ ⇒ V = V lnFG I IJ b1.6x10 g(6)b3.24 x10 g −19 −4
HV K
I D = I S exp
HI K
a D
a t + −4
t S 2.45 x10
so so
F 0.539 x10 IJ
V = (0.0259 ) lnG
−3
J S = 8.57 x10
−18
A / cm
2
a
H 2 x10 K −11
⇒
Reverse-biased generation current density
en W
Va = 0.443 V J gen = i
2τ O
8.30 We have
1 FG 1 IJ expFG V IJ
dI D FG N N IJ
Vbi = Vt ln
H n K
a d
=
HV K H V K = IS a
(a) 2
r dV i
or
d a t t
L b10 gb10 g OP
= ( 0.0259 ) ln M
16 16
1 10 F 0.020 I
−13
NM b1.8x10 g PQ 2
H 0.0259 K
6
= ⋅ exp
r 0.0259
d or
which yields Vbi = 116
. V
rd = 1.2 x10 Ω
11
And
(b) L 2 ∈aV + V f FG N + N IJ OP
W=M
1/ 2
N e H N N KQ
bi R a d
For Va = −0.020 V ,
1 10 F −0.020 I
−13
L 2(131. )b8.85x10 g(116. + 5)

a d
H 0.0259 K
−14
= ⋅ exp
rd 0.0259 =M
or N 1.6 x10
−19
rd = 5.6 x10 Ω
11
L 10 + 10 OPOP
×M
16 16
1/ 2
8.31
N b10 gb10 g QQ 16 16
or
Ideal reverse-saturation current density −4
eDn n pO eD p pnO W = 1.34 x10 cm
JS = + Then
Ln Lp
b1.6x10 gb1.8x10 gb1.34 x10 g
−19 6 −4
2b10 g
We find J gen =
b18. x10 g
−8
6 2
2
ni −4 −3
n pO = = 16
= 3.24 x10 cm or
Na 10 −9
J gen = 1.93x10
2
A / cm
and
Generation current dominates in GaAs reverse-
biased junctions.
112
(b)
8.32 FG V IJ = J FG V IJ
(a) We can write
HV K H 2V K
a a
J S exp exp
LM 1 D + 1 OP
gen
Dp t t
J S = eni
2 n
NN τ N a nO d
τ pO Q At T = 300 K
b
J S = 1.5 x10
10
g b185. x10 g
2 −31
= n b1.6 x10 gM
2
L 1 2519 or
i
N10 5x10 16 −7
J S = 4.16 x10
−11
A / cm
2
+
1 10 OP and
b
J gen = 15 gb182. x10 g ⇒ −17
Q
10
16 −7 . x10
10 5 x10
or
or
b g
−7
J gen = 2.73x10
2
−31 A / cm
J S = ni 185
2
. x10
Then we can write
We also have
en W VFG IJ J gen 2.73 x10
−7
exp a =
H K = = 6.56 x10
3
J gen = i 2Vt JS 4.16 x10
−11
2τ O
so that
b g⇒
−4
For Vbi + VR = 5 V , we find W = 114
. x10 cm
Va = 2(0.0259) ln 6.56 x10
3
So
b1.6x10 gb114. x10 gn −19 −4
i
Va = 0.455 V
2b5 x10 g
J gen = −7
8.33
or (a) We can write
J = n b182
. x10 g LM 1 OP
−17
gen i Dn 1 Dp
J S = eni +
2
When J S = J gen ,
. x10 ni = 182
185
−31
. x10
−17
NN a
τ nO Nd τ pO Q
We find
which yields Dn = ( 3000)(0.0259 ) = 77.7 cm / s
2
−3
ni = 9.88 x10 cm
13
Dp = (200)(0.0259) = 518
2
. cm / s
We have
F − E IJ
= N N expG
Then
H kT K gb18. x10 g LMN101

g
b
2
ni C V −19 2 77.7
J S = 1.6 x10
6
17 −8
Then 10
b9.88x10 g = b2.8x10 gb1.04 x10 gFH 300T IK

2
3
+
1 5.18 OP
Q
13 19 19
17 −8
10 10
L −112. OP
× exp M
or
N (0.0259)aT 300f Q
−19
J S = 5.75 x10
2
A / cm
so
T = 505 K I S = AJ S = 10 b gb5.75x10 g
−3 −19
At this temperature or
J S = J gen = 182
. x10 b −17
gb9.88x10 g ⇒ 13
I S = 5.75 x10
−22
A
J S = J gen = 18
. x10
−3
A / cm
2 We also have
en WA
I gen = i
2τ O
Now
113
FG N N IJ L 2(131. )b8.85x10 g(1.28 − 0.3) FG 2 x10

W=M
−14 17
IJ OP 1/ 2
Vbi = Vt ln
H n K
a d
2
i
N 1.6 x10 H 10
−19 34
KQ
L b10 gb10 g OP
= ( 0.0259 ) ln M
17 17
or
NM b18. x10 g PQ
−4
6 2 W = 0.169 x10 cm
Then
or
Vbi = 1.28 V
eniWA FG V IJ
I rec =
H 2V K
a
exp
Also 2τ O t
L 2 ∈aV + V f FG N + N IJ OP
W=M
1/ 2
b1.6x10 −19
gb18. x10 gb0.169 x10 gb10 g
6 −4 −3
N e H N N KQ 2b10 g
bi R a d
= −8
a d
L 2(13.1)b8.85x10 g(1.28 + 5)
=M
−14
L 0.3 OP
× exp M
N 1.6 x10
−19
N 2(0.0259) Q
F 10 + 10 I OP
×G
17 17
1/ 2 or
H b10 gb10 gJK Q

−11
I rec = 7.96 x10 A
17 17
For Va = 0.5 V
or
W = 0.427 x10 cm
−4 L 2(131. )b8.85x10 g(1.28 − 0.5) FG 2 x10
W=M
−14 17
IJ OP 1/ 2
so N 1.6 x10 H 10
−19 34
KQ
b1.6x10 gb1.8x10 gb0.427 x10 gb10 g
−19 6 −4 −3
or
2b10 g
I gen = −4
−8 W = 0.150 x10 cm
or Then
I gen = 6.15x10
−13
A b1.6x10 gb1.8x10 gb0.15x10 gb10 g
−19 6 −4 −3
2b10 g
I rec = −8
The total reverse-bias current

I R = I S + I gen = 5.75x10
−22
+ 6.15x10
−13
L 0.5 OP
× exp M
or
−13
N 2(0.0259) Q
I R ≈ 6.15x10 A or
−9
Forward Bias: Ideal diffusion current I rec = 3.36 x10 A
For Va = 0.3 V Total forward-bias current:
FG V IJ = b5.75x10 g expF 0.3 I For Va = 0.3 V ;
HV K H 0.0259 K
−22
I D = I S exp a
−17 −11
t
I D = 6.17 x10 + 7.96 x10
or or
−11
I D = 6.17 x10
−17
A I D ≈ 7.96 x10 A
For Va = 0.5 V For Va = 0.5 V
b g expFH 0.0259
0.5 I
−13 −9
I D = 1.39 x10 + 3.36 x10
K
−22
I D = 5.75 x10
or
−9
or I D ≈ 3.36 x10 A
−13
I D = 1.39 x10 A (b)
Recombination current Reverse-bias; ratio of generation to ideal
diffusion current:
For Va = 0.3 V :
I gen 6.15x10 −13
= −22
IS 5.75 x10
114
Ratio = 1.07 x10

9 Then the recombination rate can be written as
Forward bias: Ratio of recombination to ideal
R=
bn e gbn e i
η
i
ηa
⋅e
−η
g−n 2
i
diffusion current: η ηa −η
τ O ni e + ni + ni e ⋅ e + ni
For Va = 0.3 V
or
I rec
=
7.96 x10
−11
ni e − 1 b ηa
g
ID 6.17 x10
−17
Ratio = 1.29 x10

6
R=
b
τO 2 + e + e ⋅e
η ηa −η
g
To find the maximum recombination rate, set
For Va = 0.5 V dR
−9
=0
I rec 3.36 x10 dη
=
ID 1.39 x10
−13
=
ni e − 1b ηa
g⋅ d 2 + e + e ⋅e
η ηa −η −1
Ratio = 2.42 x10

4
τO dx
or
8.34
Computer Plot 0=
b
ni e − 1
ηa
g ⋅ (−1) 2 + e + e η ηa
⋅e
−η −2
τO
8.35 × e −e ⋅e
η ηa −η
Computer Plot
which simplifies to
8.36
0=
b
− ni e − 1
ηa
g⋅ e − e ⋅e
η ηa −η
Computer Plot τO η ηa −η 2
2 + e + e ⋅e
8.37 The denominator is not zero, so we have
η ηa −η
We have that e − e ⋅e = 0⇒
np − ni
2
2η η 1
R= e = e ⇒ η = ηa a
τ pO (n + n ′) + τ nO ( p + p ′ ) 2
Then the maximum recombination rate becomes
Let τ pO = τ nO = τ O and n ′ = p ′ = ni
We can write Rmax =
b
ni e − 1
ηa
g
FE −E I τO 2 +e
ηa 2
+ e ⋅e
ηa −ηa 2
n = n exp
H kT K
i
Fn Fi
ni e − 1b ηa
g
p = n expG
F E − E IJ =
τO 2+ e
ηa 2
+e
ηa 2
H kT K
Fi Fp
i
or
We also have b − 1g ni e
ηa
a E − E f + b E − E g = eV
Fn Fi Fi Fp a
R =
2τ b e
max
+ 1g O
ηa 2
so that
b E − E g = eV − a E − E f which can be written as
LM F eV I − 1OP
N H kT K Q
Fi Fp a Fn Fi
a
Then n exp
LM eV − a E − E f OP
i
p = n exp
N kT Q
R = max
LM F eV I + 1OP
N H 2kT K Q
a Fn Fi
i 2τ exp O
a
F eV I ⋅ expLM −a E − E f OP F kT I , then we can neglect the (-1)

= n exp
H kT K N kT Q
i
a Fn Fi
If V >>
a
HeK
Define term in the numerator and the (+1) term in the
eV FE −E I denominator so we finally have
η =
a
kT
and η =a
H kT K Fn Fi
115
ni F eV I J S = 1.64 x10
−11
A / cm
2
Rmax =
2τ O
exp
H 2kT K a
Now
Q.E.D. FG V IJ
J D = J S exp
HV K
D
t
8.38 Also
We have
J = 0 = JG − J D
z
W
J gen = eGdx or
0 FG V IJ
HV K
−3 −11
0 = 25 x10 − 1.64 x10 exp D
In this case, G = g ′ = 4 x10 cm s , that is a

19 −3 −1
t
constant through the space charge region. Then which yields
J gen = eg ′W FG V IJ = 1.52 x10
HV K
D 9
We find exp
V = V lnG
F N N IJ or
t
H n K
a d
= V lnb152
. x10 g
bi t 2
9
i VD
L b5x10 gb5x10 g OP = 0.659 V
t
so
= (0.0259 ) ln M
15 15
NM b1.5x10 g PQ 10 2 VD = 0.548 V
and
8.40
W=M
L 2 ∈aV + V f FG N + N IJ OP 1/ 2
∈Ε crit
2
N e H N N KQ
bi R a d
VB =
a d 2 eN B
=M
L 2(11.7)b8.85x10 g(0.659 + 10) −14
or
N 1.6 x10
−19
b
(11.7) 8.85x10 −14 4 x105 gb g 2
F 5x10 + 5x10 I OP 15 15
1/ 2
30 =
b
2 1.6 x10
−19
gN
×G
H b5x10 gb5x10 gJK Q
B
15 15
which yields
−3
N B = N d = 1.73 x10 cm
16
or
−4
W = 2.35 x10 cm
8.41
Then For the breakdown voltage, we need
b
J gen = 1.6 x10
−19
gb4 x10 gb2.35x10 g19 −4
−3
N d = 3 x10 cm and for this doping, we find
15
or
µ p = 430 cm / V − s . Then
2
−3
J gen = 15
2
. x10 A / cm
Dp = (430)(0.0259) = 1114
2
. cm / s
+
8.39 For the p n junction,
J S = eni
LM 1 D + 1 D OP
2 n p
J S = eni ⋅
2 1 Dp
NN τ N τ Q a nO d pO Nd τ pO
= b1.6 x10 gb15

−19
L 1 18
. x10 g M
10 2 b1.6x10 gb15. x10 g −19 10 2
1114
.
N 3x10 10 16 −7 =
3 x10
15
10
−7
+
1 6 OP or
Q
−10
J S = 1.27 x10
2
18 −7 A / cm
10 10
Then
or
116
FG V IJ 8.44
I = J S A exp
HV K
a
+
For a silicon p n junction with
t
g A expFH 0.00259
.65 I
−3
N d = 5 x10 cm and VB ≈ 100 V
15
−3
2 x10 = 1.27 x10 b −10
K Neglecting Vbi compared to VB

Finally
xn ≈
LM 2 ∈V OP B
1/ 2
A = 1.99 x10 cm
−4 2
N eN Q d
8.42 =M
L 2(11.7)b8.85x10 g(100) OP −14 1/ 2
+
GaAs, n p , and N a = 10 cm
16 −3
N b1.6x10 gb5x10 g Q −19 15
From Figure 8.25 or

VB ≈ 75 V x n ( min) = 5.09 µm
8.43 8.45
eN d xn We find
Ε max =
∈
Vbi
Lb10 gb10 g OP = 0.933 V
= (0.0259 ) ln M
18 18
We can write
Ε ∈
MN b1.5x10 g PQ 10 2
x n = max Now
eN d eN d xn
b4 x10 g(11.7)b8.85x10 g
5 −14 Ε max =
∈
=
b1.6x10 gb5x10 g −19 16 so
or b1.6x10 gb10 gx −19 18
n
(11.7)b8.85x10 g
10 =
6
−5 −14
x n = 5.18 x10 cm
We find which yields
L b5x10 gb5x10 g OP = 0.778 V
V = ( 0.0259 ) ln M
16 16
x n = 6.47 x10 cm
−6
bi
MN b15. x10 g PQ 10 2 Now
L 2 ∈aV + V f FG N IJ FG 1 IJ OP 1/ 2
x =M
N e H N KH N + N KQ
Now bi R a
L 2 ∈aV + V f FG N IJ FG 1 IJ OP
n
1/ 2
x =M
d a d
N e H N KH N + N KQ
bi R a
Then
b6.47 x10 g = LMN 2(11.71.)6bx810.85x10 g

n
d a d −14
−6 2
or
b5.18x10 g = LMN 2(11.71.)6bx810.85x10 g

−19
−14
F 10 IJ F 1 I OP
−5 2
×aV + V fG
18
−19
F 5x10 IJ F 1 I OP H 10 K H 10 + 10 K Q
bi R 18 18 18
× aV + V fG
16
H 5x10 K H 5x10 + 5x10 K Q

bi R 16 16 16
which yields
Vbi + VR = 6.468 V
which yields
2.68 x10 = 1.29 x10 aV + V f
or
−9 −10
bi R VR = 5.54 V
so
Vbi + VR = 20.7 ⇒ VR = 19.9 V
8.46
+
Assume silicon: For an n p junction
L 2 ∈aV + V f OP
=M bi R
1/ 2
xp
N eN Q a
117
Assume Vbi << VR tS

= 0.228
(a) τ pO
For x p = 75 µm
Then
b75x10 g = b1.6x10
−4 2 b
2(11.7 ) 8.85 x10 gV
−14
R
8.49
We want
−19
gb10 g
15
tS
= 0.2
τ pO
which yields VR = 4.35 x10 V
3
(b) Then
For x p = 150 µm , we find tS 1
erf = = erf 0.2
τ pO IR
VR = 1.74 x10 V
4
1+
From Figure 8.25, the breakdown voltage is IF
approximately 300 V. So, in each case, where
breakdown is reached first. erf 0.2 = erf (0.447 ) = 0.473
We obtain
8.47
Impurity gradient IR 1 IR
= −1⇒ = 111
.
2 x10
18 IF 0.473 IF
−4
a= = 10 cm
22
2 x10
−4 We have
From the figure FG −t IJ
H τ K = 1 + (0.1)FG I IJ = 111.
2
VB = 15 V exp
t2
HI K
pO
erf + R
8.48
τ pO F t IJ
πG
F
Hτ K
2
IR
(a) If = 0.2 pO
IF By trial and error,

Then we have t2
= 0.65
ts IF 1 1 τ pO
erf = = =
τ pO IF + IR IR 1 + 0.2
1+
IF 8.50
or C j = 18 pF at VR = 0
tS C j = 4.2 pF at VR = 10 V
erf = 0.833
τ pO We have τ nO = τ pO = 10
−7
s , I F = 2 mA
We find
VR 10
tS tS And I R ≈ = = 1 mA
= 0.978 ⇒ = 0.956 R 10
τ pO τ pO So
(b) FG IFIJ = b10 g lnF1 + 2 I
H I K H 1K
−7
t S ≈ τ pO ln 1 +
IR
If = 1.0 , then R
IF or
−7
t S = 11
. x10 s
tS 1
erf = = 0.5 Also
τ pO 1+1
18 + 4.2
which yields Cavg = = 111
. pF
2
The time constant is
118
τ S = RCavg = 10 b gb111. x10 g = 111. x10

4 −12 −7
s
=
LM 2(11.7)b8.85x10 g(114. − 0.40)
−14
Now
Turn-off time = t S + τ S = (11 . ) × 10
−7
N −19
1.6 x10
. + 111 s
F 5x10 + 5x10
×G
19 19 I OP 1/ 2
Or
2.21x10
−7
s H b5x10 g 19 2 JK PQ
which yields
8.51 −7
W = 6.19 x10 cm = 61.9 A
°
LM b5x10 g OP = 114. V
Vbi = ( 0.0259 ) ln
19 2
MN b1.5x10 g PQ 10 2
8.52
Sketch
We find
W=M
L 2 ∈aV − V f FG N + N IJ OP 1/ 2
N e H N N KQ
bi a a d
a d
119
(page left blank)
120
Chapter 9
Problem Solutions
9.2
9.1 (a) φ BO = φ m − χ = 51. − 4.01
(a) We have or
FG N IJ φ BO = 1.09 V
eφ n = eVt ln
HN K
C
(b)
d
F 2.8x10 IJ = 0.206 eV FG N IJ
= (0.0259 ) lnG HN K
19
φ n = Vt ln C
H 10 K 16 d
(c)
= (0.0259 ) ln
FG 2.8x10 IJ = 0.265 V 19
φ BO = φ m − χ = 4.28 − 4.01 H 10 K 15
or Then
φ BO = 0.27 V Vbi = φ BO − φ n = 1.09 − 0.265
and or
Vbi = φ BO − φ n = 0.27 − 0.206 Vbi = 0.825 V
or (c)
Vbi = 0.064 V
Also W=x =M
L 2 ∈V OP bi
1/ 2
L 2 ∈V OP 1/ 2 N eN Q
d
d
x =M
d
N eN Q
bi
L 2(11.7)b8.85x10 g(0.825) OP
=M
−14
1/ 2
N b1.6x10 gb10 g Q
d
L 2(11.7)b8.85x10 g(0.064) OP
−19 15
−14 1/ 2
=M
N b1.6x10 gb10 g Q −19 16
or
−4
W = 1.03 x10 cm
or
−6
(d)
x d = 9.1x10 cm eN d xd
Then Ε max =
∈
Ε max =
eN d xd
b1.6x10 gb10 gb1.03x10 g
−19 15 −4
(11.7)b8.85x10 g
∈ =
b gb gb g
−14
−19 16 −6
1.6 x10 10 9.1x10
(11.7)b8.85x10 g
= −14
or
Ε max = 159
4
. x10 V / cm
or
Ε max = 1.41x10 V / cm
4
9.3
(d) (a) Gold on n-type GaAs
Using the figure, φ Bn = 0.55 V χ = 4.07 V and φ m = 5.1 V
So φ BO = φ m − χ = 5.1 − 4.07
Vbi = φ Bn − φ n = 0.55 − 0.206 and
or φ BO = 1.03 V
Vbi = 0.344 V (b)
We then find FG N IJ
φ n = Vt ln
HN K
C
−5
x d = 2.11x10 cm and Ε max = 3.26 x10 V / cm
4
123
= (0.0259 ) ln
FG 4.7 x10 IJ 17
b1.6x10 gb5x10 gb0.410x10 g
−19 16 −4
H 5x10 K 16
=
. )b8.85 x10 g
(131 −14
or or
φ n = 0.0580 V Ε max = 2.83 x10 V / cm
5
(c)
Vbi = φ BO − φ n = 1.03 − 0.058 9.5
or Gold, n-type silicon junction. From the figure,
Vbi = 0.972 V φ Bn = 0.81 V
(d) For N d = 5 x10 cm , we have
15 −3
xd =
LM 2 ∈aV + V f OP
bi R
1/ 2
FG N IJ
N eN Q d
φ n = Vt ln
HN K
C
L 2(131. )b8.85x10 g(0.972 + 5) OP

d
=M
−14
1/ 2
= (0.0259 ) ln
FG 2.8x10 IJ = φ 19
N b1.6x10 gb5x10 g Q −19 16

H 5x10 K 15 n
= 0.224 V
or Then
x d = 0.416 µm Vbi = 0.81 − 0.224 = 0.586 V
(e) (a)
Now
eN d xd
Ε max =
∈ L e ∈ N OP
C′ = M
1/ 2
N 2aV + V f Q
d
b1.6x10 gb5x10 gb0.416x10 g

−19 16 −4
bi R
=
. )b8.85 x10 g
(131 −14
Lb1.6x10 g(11.7)b8.85x10 gb5x10 g OP
=M
−19 −14 15
1/ 2
or
Ε max = 2.87 x10 V / cm
5
MN 2(0.586 + 4 ) PQ
or
C ′ = 9.50 x10
−9 2
F / cm
9.4
For A = 5 x10 cm , C = C ′A
−4 2
φ Bn = 0.86 V and φ n = 0.058 V (Problem 9.3)

So
Then
C = 4.75 pF
Vbi = φ Bn − φ n = 0.86 − 0.058
(b)
or −3
For N d = 5 x10 cm , we find
16
Vbi = 0.802 V
and
φ n = (0.0259) ln
FG 2.8x10 IJ = 0.164 V19
xd
L 2 ∈aV + V f OP
=M bi R
1/ 2
H 5x10 K 16
N eN Q d
Then
Vbi = 0.81 − 0.164 = 0.646 V
L 2(131. )b8.85x10 g(0.802 + 5) OP
=M
−14 1/ 2
Now
N b1.6x10 gb5x10 g Q −19 16

Lb1.6x10 g(11.7)b8.85x10 gb5x10 g OP
C′ = M
−19 −14 16 1/ 2
or]
x d = 0.410 µm
N 2(0.646 + 4 ) Q
or
Also C ′ = 2.99 x10 F / cm
−8 2
eN d xd and
Ε max =
∈ C = C ′A
so
C = 15 pF
124
9.6 L 2(11.7)b8.85x10 g(0.344) OP

=M
−14
1/ 2
(a) From the figure, Vbi = 0.90 V N b1.6x10 gb10 g Q −19 16
(b) We find or
F 1I 2
x d = 0.211 µm
∆
H C′ K =
3 x10 − 0
15
= 1.03 x10
15
Also
∆V R 2 − ( −0.9 ) eN d xd
Ε max =
and ∈
1.03 x10 =
15 2 b1.6x10 gb10 gb0.211x10 g
−19 16 −4
(11.7)b8.85x10 g
=
e ∈ Nd −14
Then we can write or

2 Ε max = 3.26 x10 V / cm
4
Nd =
b1.6x10 g(131. )b8.85x10 gb1.03x10 g
−19 −14 15
(b)
or
∆φ =
eΕ Lb1.6x10 gb3.26x10 g OP
=M
−19 4 1/ 2
4π ∈ N 4π (11.7 )b8.85 x10 g Q

−3
N d = 1.05 x10 cm
16
−14
(c)
F N IJ
= V lnG
or
∆φ = 20.0 mV
φn
HN K
C
t
d Also
= ( 0.0259 ) ln
FG 4.7 x10 IJ 17
e
H 1.05x10 K 16
xm =
16π ∈ Ε
or
φ n = 0.0985 V
L
=M
b1.6x10 g OP −19 1/ 2
(d) N16π (11.7)b8.85x10 gb3.26x10 g Q −14 4
φ Bn = Vbi + φ n = 0.90 + 0.0985 or

−6
or x m = 0.307 x10 cm
φ Bn = 0.9985 V (c)
For VR = 4 V
9.7
From the figure, φ Bn = 0.55 V
L 2(11.7)b8.85x10 g(0.344 + 4) OP
=M
−14
1/ 2
N b1.6x10 gb10 g Q
xd −19 16
(a)
FG N IJ or
φ n = Vt ln
HN K
C
x d = 0.75 µm
d
F 2.8x10 IJ = 0.206 V
= ( 0.0259 ) lnG
19
and
b1.6x10 gb10 gb0.75x10 g
−19 16 −4
H 10 K 16 Ε max =
(11.7)b8.85x10 g −14
Then
or
Vbi = φ Bn − φ n = 0.55 − 0.206
Ε max = 116
5
. x10 V / cm
or
Vbi = 0.344 V We find
We find eΕ
∆φ = ⇒ ∆φ = 37.8 mV
L 2 ∈V OP
=M bi
1/ 2
4π ∈
xd
N eN Q d
and
125
xm =
e
⇒ x m = 0.163 x10 cm
−6 L 2(131. )b8.85x10 g(0.812) OP
=M
−14
1/ 2
16π ∈ Ε
N b1.6x10 gb5x10 g Q −19 16
or
9.8
x d = 0.153 µm
We have
−e Then
−φ ( x ) = − Εx eN d xd
16π ∈ x Ε max =
or ∈
eφ ( x ) =
e
2
Lb1.6x10 gb5x10 gb0.153x10 g OP
=M
−19 16 −4
N (13.1)b8.85x10 g Q
+ Εex −14
16π ∈ x
Now or
d (eφ ( x )) −e
2
Ε max = 1.06 x10 V / cm
5
=0= + Εe
16π ∈ x
2
dx (b)
2
Solving for x , we find We want ∆φ to be 7% or φ Bn ,
e So
x =
2
16π ∈ Ε ∆φ = ( 0.07 )(0.87) = 0.0609 V

or Now
x = xm =
e
∆φ =
eΕ
⇒Ε=
b∆φ g(4π ∈) 2
16π ∈ Ε 4π ∈ e
Substituting this value of xm = x into the so
equation for the potential, we find
Ε=
(0.0609)2 (4π )(131
. ) 8.85 x10
−14
b g
−19
e e 1.6 x10
∆φ = +Ε or
e 16π ∈ Ε
16π ∈ Ε max = 3.38 x10 V / cm
5
16π ∈ Ε
Now
which yields
eN d xd ∈Ε
eΕ Ε max = ⇒ xd =
∆φ = ∈ eN d
4π ∈
so
b gb g
(13.1) 8.85x10 −14 3.38 x105
9.9
Gold, n-type GaAs, from the figure φ Bn = 0.87 V
xd =
b1.6x10 gb5x10 g
−19 16
(a) or
FG N IJ x d = 0.49 µm
φ n = Vt ln
HN K
C
Then
d
F 4.7 x10 IJ = 0.058 V L 2 ∈bV + V g OP

=M
1/ 2
= ( 0.0259 ) lnG
−4
xd = 0.49 x10
17 bi R
H 5x10 K 16
N eN Q d
Then or we can write
aV + V f =
2
Vbi = φ Bn − φ n = 0.87 − 0.058 eN d xd
bi R
or 2∈
Vbi = 0.812 V
b1.6x10 gb5x10 gb0.49 x10 g
−19 16 −4 2
. )b8.85 x10 g
Also =
2(131
−14
xd =
LM 2 ∈V OP bi
1/ 2
or
N eN Q d
126
Vbi + VR = 8.28 V = 0.812 + VR With interface states, the barrier height is less
or sensitive to the metal work function.
VR = 7.47 V
9.12
We have that
9.10
Computer Plot
b E − eφ
g O
− eφ Bn g
9.11
=
eDit
1
2 e ∈ N d φ Bn − φ n a f
(a) φ BO = φ m − χ = 5.2 − 4.07
− aχ + φ f
∈i
or − φm Bn
φ BO = 113
. V eDit δ
(b) Let eDit = Dit′ cm eV b −2 −1

g . Then we can write
We have e(112
. − 0.230 − 0.60)
b E − eφg O g
− eφ Bn =
1
eDit
a f
2 e ∈ N d φ Bn − φ n
=
1
b
2 1.6 x10 g(11.7)b8.85x10 g
−19 −14
Dit′
− aχ + φ f
∈i
− φm ×b5 x10 g(0.60 − 0.164 )
16 1/ 2
Bn
eDit δ
which becomes b8.85x10 g 4.75 − (4.01 + 0.60)
−14
a
e 1.43 − 0.60 − φ Bn f −
D ′ b20 x10 g
it
−8
FeG 10 IJ b g(131. )b8.85x10 g

1 −19 −14 We find that
= 2 1.6 x10
Dit′ = 4.97 x10 cm eV
13 11 −2 −1
HeK
b gaφ − 0.10f × 10
16
Bn
1/ 2 9.13
FG N IJ
b8.85x10 g 5.2 − a4.07 + φ f
−14
(a) φ n = Vt ln
HN K
C
−
F 10 IJ b25x10 g
eG
13 Bn d
FG 2.8x10 IJ
HeK
−8 19
= (0.0259 ) ln
or
H 10 K 16
0.83 − φ Bn or
φ n = 0.206 V
= 0.038 φ Bn = 0.10 − 0.221 113
. − φ Bn a f (b)
We then find Vbi = φ Bn − φ n = 0.89 − 0.206
φ Bn = 0.858 V
or
(c) Vbi = 0.684 V
If φ m = 4.5 V , then
(c)
φ BO = φ m − χ = 4.5 − 4.07 F −eφ I
J ST = A T exp
H kT K
* 2 Bn
or
φ BO = 0.43 V
For silicon, A = 120 A / cm / ° K
* 2 2
From part (b), we have

Then
0.83 − φ Bn
a f
−0.89 F I
J ST = (120)(300) exp
H K
2
= 0.038 φ Bn − 0.10 − 0.221 4.5 − 4.07 + φ Bn

0.0259
We then find or
φ Bn = 0.733 V J ST = 1.3 x10
−8
A / cm
2
127
(d) Now
F I eVa LM −0.68 OP
H kT K
J n = J ST exp J ST = (120)(400) exp
2
N (0.0259)a400 300f Q
or or
F J IJ = (0.0259) lnF 2 I
V = V lnG J ST = 5.39 x10
−2 2
a
HJ K t
n
ST
H 1.3x10 K −8
For I = 1 mA ,
A / cm
or F 400 I lnF 2 I
Va = 0.488 V Va = (0.0259 )
H 300 K H 5.39 x10 K −2
or
9.14 Va = 0.125 V
(a) From the figure, φ Bn = 0.68 V
For I = 10 mA ,
Then
F −φ IJ F 400 I lnLM 20 OP
J ST = A T expG
*
HV K
2 Bn
Va = (0.0259 )
H 300 K N5.39 x10 Q −2
t or
F −0.68 I Va = 0.204 V
= (120)(300) exp
H 0.0259 K
2
For I = 100 mA ,
or
F 400 I lnF 200 I
J ST = 4.28 x10
−5
A / cm
2
−3
Va = (0.0259 )
H 300 K H 5.39 x10 K −2
−3 10 or
For I = 10 A ⇒ Jn = = 2 A / cm
2
5 x10
−4 Va = 0.284 V
We have
Va = Vt ln
FG J IJ n
9.15
HJ K (a) From the figure, φ Bn = 0.86 V
F 2 I
ST
FG −φ IJ
J ST = A T exp
HV K
* 2 Bn
= (0.0259 ) ln
H 4.28x10 K −5
t
or F −0.86 I
= (112
. )(300) exp
H 0.0259 K
2
Va = 0.278 V
For I = 10 mA ⇒ J n = 20 A / cm
2 or
−10
J ST = 3.83 x10
2
And A / cm
20 F I Now
FG V IJ
Va = (0.0259 ) ln
4.28 x10
−5
H K J n = J ST exp
HV K
a
or t
Va = 0.338 V
and we can write, for J n = 5 A / cm
2
For I = 100 mA ⇒ J n = 200 A / cm

2
FG J IJ
Va = Vt ln
HJ K
n
And
200 F I ST
F 5 I
Va = (0.0259 ) ln
4.28 x10
−5
H K = (0.0259 ) ln
H 3.83x10 K −10
or
Va = 0.398 V or
Va = 0.603 V
(b)
For T = 400 K , φ Bn = 0.68 V
128
eN d xd
(b) Ε max =
∈
For J n = 10 A / cm
b1.6x10 gb10 gb0.566x10 g
2
−19 16 −4
F 10 I = 0.621 V =
(11.7)b8.85x10 g
Va = (0.0259 ) ln
H 3.83x10 K −10
or
−14
so
Ε max = 8.75 x10 V / cm
4
∆Va = 0.621 − 0.603 ⇒
∆Va = 18 mV Now
Lb1.6x10 gb8.75x10 g OP
∆φ = M
−19 4
1/ 2
9.16
Computer Plot
N 4π (11.7)b8.85x10 g Q −14
or
∆φ = 0.0328 V
9.17
Then
From the figure, φ Bn = 0.86 V
F −φ IJ expFG ∆φ IJ F 0.0328 I
H 0.0259 K
−5
J R1 = 4.28 x10 exp
= A T expG
H V K HV K
* 2 Bn
J ST
t t or
F −0.68 I expFG ∆φ IJ J R1 = 1.52 x10

−4
A / cm
2
= (120)(300) exp
H 0.0259 K H V K
2
−4
2
t
−8
or I R1 = 152
. x10 A
= 4.28 x10 expG

F ∆φ IJ (b)
HV K
−5
J ST
For VR = 4 V ,
L 2(11.7)b8.85x10 g(4.474) OP
t
1/ 2
We have −14
=M
N b1.6x10 gb10 g Q
eΕ xd −19 16
∆φ =
4π ∈ or
Now x d = 0.761 µm
φ = V lnG
F N IJ b1.6x10 gb10 gb0.761x10 g
−19 −4
HN K
C 16
(11.7)b8.85x10 g
n t
d
Ε max = −14
F 2.8x10 IJ = 0.206 V
= ( 0.0259 ) lnG
19
or
H 10 K 16
Ε max = 118
. x10 V / cm
5
and and
(a)
Vbi = φ Bn − φ n = 0.68 − 0.206 = 0.474 V
L b1.6x10 gb118. x10 g OP
∆φ = M
−19 5 1/ 2
We find for VR = 2 V , N 4π (11.7)b8.85x10 g Q −14
xd =
LM 2 ∈aV + V f OP
bi R
1/ 2 or
∆φ = 0.0381 V
N eN Q Now
F 0.0381I
d
=M
L 2(11.7)b8.85x10 g(2.474) OP −14
1/ 2
J R 2 = 4.28 x10 exp
−5
H 0.0259 K
N b1.6x10 gb10 g Q −19 16
or
or −4
J R 2 = 186
2
. x10 A / cm
x d = 0.566 µm
Finally,
Then −8
I R 2 = 1.86 x10 A
129
F m I F −eφ I
= 2G J exp
* 3
H h K H kT K
− n n
J s→ m
9.18
We have that
F −m v IJ dv
× z v expG
∞ * 2
z H 2kT K
∞ n x
−
J s→ m =
x x
v x dn vOx
EC
The incremental electron concentration is given

+∞
F −m v IJdv × z expFG −m v IJ dv
× z expG
* 2 +∞ * 2
H 2kT K
z
H 2kT K
n y n
by y z
−∞ −∞
dn = g C ( E ) f F ( E )dE
We can write that
We have
4π 2 mn b g * 3/ 2
1 * 2
2
mn vOx = e Vbi − Va a f
gC ( E ) = E − EC
h
3
Make a change of variables:
and, assuming the Boltzmann approximation mn v x
* 2
a
e Vbi − Va f
f F ( E ) = exp
− E − EF LM a fO
PQ 2 kT
=α +
2
kT
kT N or
Then LMα + eaV − V f OP
2 kT
b g m N
vx =
Q
2 2
bi a
3/ 2
4π 2 mn
* *
kT
N kT Q
n
dn = E − E C ⋅ exp F
h
3 Taking the differential, we find
If the energy above E C is kinetic energy, then
v dv = G
F 2kT IJ αdα
1
mn v = E − E C
* 2
x
Hm K x *
n
2 We may note that when v x = vOx , α = 0 .

We can then write Other change of variables:
mn
*
mn v y
* 2
F 2kT IJ
⇒v =G
1/ 2
E − EC = v =β
Hm K ⋅β
2
y *
2 2 kT n
and
1 mn v z
* 2
F 2kT IJ
⇒v =G
1/ 2
=γ ⋅γ
Hm K
2
dE = mn ⋅ 2 vdv = mn vdv
* *
z *
2 2 kT n
We can also write Substituting the new variables, we have

a
E − E F = E − EC + EC − E F fa f F m I F 2kT IJ expF −eφ I
= 2G J ⋅ G
* 3 2
H h K H m K H kT K
− n n
J s→ m
1 *
= mn v + eφ n
* 2
n
2
LM −eaV − V f OP ⋅ z α expb−α gdα ∞
× exp
N kT Q
bi a 2
so that
F m I F −eφ I ⋅ expFG −m v IJ ⋅ 4πv dv
dn = 2G J exp
* 3 * 2 0
H h K H kT K H 2kT K × z expb − β gdβ ⋅ z expb −γ gdγ

n n n 2
+∞ +∞
2 2
We can write −∞ −∞
v = v x + v y + vz
2 2 2 2
9.19
The differential volume element is For the Schottky diode,
4πv dv = dv x dv y dv z
2
−8 −4
J ST = 3 x10 A / cm , A = 5 x10 cm
2 2
The current is due to all x-directed velocities that For I = 1 mA ,

are greater than vOx and for all y- and z-directed −3
10
velocities. Then J= = 2 A / cm
2
−4
5 x10
We have
130
FG J IJ FG V IJ
HJ K HV K
apn
Va = Vt ln I PN = I S exp (pn junction diode)
ST t
F 2 I We have I S + I PN = 0.5x10
−3
A , Vas = Vapn
= (0.0259 ) ln
H 3x10 K −8
Then
or
Va = 0.467 V (Schottky diode)
−3
a
0.5 x10 = I ST + I S exp f FGH VV IJK a
t
−12
For the pn junction, J S = 3 x10 A / cm
2
or
Then
F I V = V lnG
F 0.5x10 −3
IJ
Va = (0.0259 ) ln
2
H K
a
H I +I
t
S ST
K
F 0.5x10 IJ = 0.239 V
−12
3 x10
= (0.0259 ) lnG
−3
or
Va = 0.705 V (pn junction diode) H 5x10 + 10 K −8 −12
Now
9.20 F 0.239 I
H 0.0259 K
−8
I = 5 x10 exp
For the pn junction diode, S
−12 −4
J S = 5 x10 A / cm , A = 8 x10 cm
2 2
or
For I = 1.2 mA , I S ≈ 0.5 x10
−3
A (Schottky diode)
−3
1.2 x10 and
J= = 15
FG 0.239 IJ
2
−4
. A / cm
8 x10 −12
Then
I PN = 10 exp
H 0.0259 K
FG J IJ or
Va = Vt ln
HJ K S
I PN = 1.02 x10
−8
A (pn junction diode)
F 15. I = 0.684 V (b) Diodes in Series:

= (0.0259 ) ln
H 5x10 K −12 We obtain,
F 0.5x10 IJ
= (0.0259 ) lnG
−3
For the Schottky diode, the applied voltage will
be less, so
Vas
H 5x10 K −8
Va = 0.684 − 0.265 = 0.419 V or

We have Vas = 0.239 V (Schottky diode)
FV I
expG J
and
I = AJ ST
HV K
a
Vapn = ( 0.0259 ) ln
FG 0.5x10 IJ −3
H 10 K
t
so −12
−3
1.2 x10 = A 7 x10 b −8
g expFH 00.0259
.419 I
K or
Vapn = 0.519 V (pn junction diode)
which yields
−3
A = 1.62 x10 cm
2
9.22
(a) For I = 0.8 mA , we find
9.21 0.8 x10
−3
(a) Diodes in parallel: J= = 114

. A / cm
2
−4
We can write 7 x10
FG V IJ We have
FG J IJ
I S = I ST exp
HV K
as
(Schottky diode)
and
t Va = Vt ln
HJ K S
For the pn junction diode,
131
F 114. I J ST (400)
Va = (0.0259 ) ln
H 3x10 K = 4.85x10
3
J ST (300)
−12
or and so
Va = 0.691 V
For the Schottky diode,
I = 7 x10 b −4
gb4.85x10 gb4 x10 g expFH 0.003453
3 .445 I
K
−8
114
. F I or
Va = (0.0259 ) ln
4 x10 H
−8
K I = 53.7 mA
or
Va = 0.445 V 9.23
(b) Computer Plot
For the pn junction diode,
F T I expFG − E IJ
3 9.24
H 300 K H kT K We have
g
J S ∝ ni ∝
2
F kT I ⋅ expF eφ I
Then
J S (400) RC =
H e K H kT K Bn
* 2
AT
J S (300) which can be rewritten as
F 400I expLM − E
3
E O LM R A T OP = eφ * 2
H 300K N (0.0259)a400 300f 0.0259 PQ N akT ef Q kT

C Bn
= +
g g
ln
or so
LM 112. − 112. OP F kT I ⋅ lnLM R A T OP * 2
= 2.37 exp
N 0.0259 0.03453 Q φ = Bn
H e K N akT ef Q C
We find
J S (400)
L b10 g(120)(300) OP
= (0.0259 ) ln M
−5 2
= 116
N 0.0259 Q
5
. x10
J S (300)
Now or
gb116. x10 gb3x10 g expFH 0.003453

.691 I φ Bn = 0.216 V
b
I = 7 x10
−4 5
K
−12
or 9.25
I = 120 mA (b) We need φ n = φ m − χ s = 4.2 − 4.0 = 0.20 V
For the Schottky diode And
− eφ BOF I FG N IJ
H K φ n = Vt ln
HN K
C
J ST ∝ T exp
2
kT d
Now or
J ST (400)
0.20 = (0.0259 ) ln
FG 2.8x10 IJ 19
J ST (300) H N K
F 400I expLM −φ OP
d
2
φ which yields
=
H 300K N (0.0259)a400 300f 0.0259 Q
+ BO BO
N d = 1.24 x10 cm
16 −3
or (c)
LM 0.82 − 0.82 OP Barrier height = 0.20 V
= 1.78 exp
N 0.0259 0.03453 Q
We obtain
132
9.26
We have that 9.27
Ε=
− eN d
xn − x a f FG N IJ
(b) φ BO = φ p = Vt ln
HN K
V
∈
a
Then
FG x ⋅ x − x IJ + C = (0.0259 ) lnG
F 1.04 x10 IJ ⇒
19
z H 5x10 K
2
eN d
∈ H 2K
φ = − Εdx = n 2
16
φ BO = 0.138 V
Let φ = 0 at x = 0 ⇒ C2 = 0
So
FG x ⋅ x − x IJ
eN d
2 9.28
∈ H 2K
φ= Sketches
n
9.29
At x = x n , φ = Vbi , so
Sketches
2
eN d xn
φ = Vbi = ⋅
∈ 2 9.30
or Electron affinity rule
2 ∈Vbi b
∆E C = e χ n − χ p g
xn = For GaAs, χ = 4.07 ; and for AlAs, χ = 3.5 ,
eN d
If we assume a linear extrapolation between
Also GaAs and AlAs, then for
Vbi = φ BO − φ n Al0. 3 Ga0 . 7 As ⇒ χ = 3.90
where Then
FG N IJ E C = 4.07 − 3.90 ⇒
φ n = Vt ln
HN K
C
d E C = 0.17 eV
For
φ BO 0.70 9.31
φ= = = 0.35 V
2 2 Consider an n-P heterojunction in thermal
we have equilibrium. Poisson’s equation is
b1.6x10 g N x b50x10 g −19
d −8
d φ
2
=−
ρ( x)
=−
dΕ
(11.7)b8.85x10 g
0.35 =
∈
2
−14 n
dx dx
b50x10 g OP 2
In the n-region,
ρ( x ) eN dn
−8
dΕ n
− = =
2 PQ dx ∈n ∈n
For uniform doping, we have
or
0.35 = 7.73x10 N b x − 25x10 g eN dn x
−14 −8
d n Εn = + C1
We have ∈n
x =M
L 2(11.7)b8.85x10 gV OP −14
bi
1/ 2 The boundary condition is
Ε n = 0 at x = − x n , so we obtain
n
N b1.6x10 g N Q −19
d
C1 =
eN dn xn
and
∈n
Vbi = 0.70 − φ n
Then
By trial and error,
N d = 3.5 x10 cm
18 −3
Εn =
∈n
eN dn
x + xn a f
In the P-region,
133
dΕ P eN aP Similarly on the P-side, we find

=− 2
dx ∈P eN aP x p
VbiP =
which gives 2 ∈P
eN x We have that
Ε P = − aP + C2 2 2
∈P eN dn xn eN aP x P
Vbi = Vbin + VbiP = +
We have the boundary condition that 2 ∈n 2 ∈P
Ε P = 0 at x = x P so that We can write
C2 =
eN aP x P FG N IJ
x P = xn
HN K
dn
∈P
aP
Then Substituting and collecting terms, we find
ΕP =
eN aP
a x − xf V =M
L e ∈ N N + e ∈ N OP ⋅ x
P dn aP n
2
dn 2
N 2∈∈ N Q
P
∈P bi n
n P aP
Assuming zero surface charge density at x = 0 ,
Solving for x , we have
the electric flux density D is continuous, so n
∈n Ε n (0) =∈P Ε P (0)

x =M
L 2 ∈ ∈ N V OP 1/ 2
N eN a∈ N + ∈ N f Q
n P aP bi
which yields n
N dn xn = N aP x P
dn P aP n dn
Similarly on the P-side, we have

We can determine the electric potential as
z
φ n ( x ) = − Ε n dx x =M
L 2 ∈ ∈ N V OP 1/ 2
N eN a∈ N + ∈ N f Q
n P dn bi
P
= −M
L eN x + eN x x OP + C
dn
2
dn n
aP P
The total space charge width is then

aP n dn
N 2∈ ∈ Q n n
3
W = xn + x P
Now Substituting and collecting terms, we obtain
Vbin = φ ( 0) − φ a − x f L 2 ∈ ∈ V a N + N f OP 1/ 2
W=M
L eN x + eN x OP
n n n
N eN N a∈ N + ∈ N f Q
n P bi aP dn
2 2
= C − MC − dn n dn n
N 2∈ ∈ Q
dn aP n dn P aP
3 3
n n
or
2
eN n x n
Vbin =
2 ∈n
134
Chapter 10
i E = 17.64 mA
Problem Solutions
10.1 10.5
Sketch iC 510
(a) β = = ⇒ β = 85
iB 6
10.2
Sketch β 85
α= = ⇒ α = 0.9884
1+ β 86
10.3
i E = iC + i B = 510 + 6 ⇒ i E = 516 µA
eDn ABE n BO
(a) IS = (b)
xB
2.65
=
b 1.6 x10
−19
g b gb g
(20) 10 −4 104 β=
0.05
⇒ β = 53
−4
10 53
−14
α= ⇒ α = 0.9815
or I S = 3.2 x10 A 54
(b) i E = 2.65 + 0.05 ⇒ i E = 2.70 mA
F 0.5 I ⇒
H 0.0259 K
−14
(i) iC = 3.2 x10 exp
10.6
iC = 7.75 µA (c) For i B = 0.05 mA ,
iC = βi B = (100)(0.05) ⇒ iC = 5 mA
F 0.6 I ⇒
H 0.0259 K
−14
(ii) iC = 3.2 x10 exp We have
vCE = VCC − iC R = 10 − (5)(1)
iC = 0.368 mA
or
F 0.7 I ⇒ vCE = 5 V
H 0.0259 K
−14
(iii) iC = 3.2 x10 exp
iC = 17.5 mA 10.7
(b) VCC = I C R + VCB + VBE
10.4 so
α 0.9920 10 = I C (2 ) + 0 + 0.6
(a) β = = ⇒ β = 124 or
1 − α 1 − 0.9920
(b) From 10.3b I C = 4.7 mA
i 7.75
(i) For iC = 7.75 µA ; i B = C = ⇒ 10.8
β 124
(a)
i B = 0.0625 µA ,
F 1 + β IJ ⋅ i = F 125 I (7.75) ⇒ n pO =
ni
2
=
b15. x10 g 10 2
= 2.25 x10 cm
4 −3
=G
H β K H 124 K
16
iE C
NB 10
At x = 0 ,
i E = 7.81 µA
FG V IJ
n p (0) = n pO exp
HV K
BE
(ii) For iC = 0.368 mA , i B = 2.97 µA ,
t
i E = 0.371 mA or we can write

(iii) For iC = 17.5 mA , i B = 0.141 mA ,
V = V lnG
F n (0)IJ
Hn K
p
BE t
pO
139
We want n P (0) = 10% × 10 = 10 cm ,

16 15 −3 or
So x p 2 = 0.118 µm
VBE = (0.0259) ln
FG 10 IJ 15 Now
H 2.25x10 K 4
or
x B = x BO − x p1 − x p 2 = 110
. − 0.207 − 0.118
or
x B = 0.775 µm
VBE = 0.635 V
(b)
10.9
At x ′ = 0 ,
p (0) = p expG
F V IJ (a) p EO =
ni
2
=
b1.5x10 g 10 2
⇒
HV K
BE
17
n nO
NE 5 x10
t
−3
where p EO = 4.5 x10 cm
2
p =
n
=
b1.5x10 g
2
i
10 2
= 2.25 x10 cm
3 −3
ni
2
b1.5x10 g 10 2
nO
NE 10
17 n BO = = 16
⇒
NB 10
Then
F 0.635 I ⇒ n BO = 2.25 x10 cm
4 −3
p (0) = 2.25 x10 exp

H 0.0259 K
3
n
pCO =
ni
2
=
b15. x10 g 10 2
⇒
pn (0) = 10 cm
14 −3
15
NC 10
(c) −3
pCO = 2.25 x10 cm
5
From the B-C space charge region,
x =M
L 2 ∈aV + V f FG N IJ FG 1 IJ OP 1/ 2 (b)
FG V IJ
N e H N KH N + N KQ
bi R1 C
n B (0) = n BO exp
HV K
p1 BE
B C B
We find t
L b10 gb10 g OP = 0.635 V = b 2.25 x10 g exp

F 0.625 I
V = (0.0259 ) ln M H 0.0259 K
16 15 4
bi1
MN b1.5x10 g PQ 10 2
or
Then n B (0) = 6.80 x10 cm
14 −3
x =M
L 2(11.7)b8.85x10 g(0.635 + 3) −14
Also
p1
N 1.6 x10
−19
p E (0) = p EO exp
FG V IJ
HV K
BE
×G
F 10 IJ F 1 I OP 15 1/ 2
t
H 10 K H 10 + 10 K Q = b4.5 x10 g exp

F 0.625 I
H 0.0259 K
16 15 16
2
or
x p1 = 0.207 µm or
p E (0) = 1.36 x10 cm
13 −3
We find
Lb10 gb10 g OP = 0.754 V
V = ( 0.0259 ) ln M
17 16
10.10
bi 2
MN b15. x10 g PQ 10 2
ni
2
b1.5x10 g 10 2
Then (a) n EO = = ⇒
L 2(11.7)b8.85x10 g(0.754 − 0.635)
18
−14 NE 10
x =M −3
N n EO = 2.25 x10 cm
2
p2 −19
1.6 x10
F 10 IJ F 1 I OP 1/ 2
ni
2
b15. x10 g 10 2
×G
17
p BO = = ⇒
H 10 K H 10 + 10 K Q 16 17 16 NB 5 x10
16
140
p BO = 4.5 x10 cm
3 −3
a f ax f
d δn B
b1.5x10 g
B
dx
d aδn f
10 2
2
ni
nCO = = 15
⇒ ( 0)B
NC 10 dx
nCO = 2.25 x10 cm
5 −3
LMexpFG V IJ − 1OP + coshFG x IJ
N HV K Q HL K
BE B
(b)
p (0) = p expG
F V IJ =
LMexpFG V IJ − 1OP coshFG x IJ + 1
t B
HV K N HV K Q HL K
EB BE B
B BO
t
F 0.650 I
t B
= b 4.5 x10 g exp

1
H 0.0259 K
3
≈
Fx I
cosh G J
HL K
B
or
p B (0) = 3.57 x10 cm
14 −3 B
xB
Also (a) For = 0.1 ⇒ Ratio = 0.9950
n E (0) = n EO exp
FG V IJ LB
HV K
EB
xB
t (b) For = 1.0 ⇒ Ratio = 0.648
= b 2.25 x10 g exp

F 0.650 I LB
H 0.0259 K
2
xB −5
(c) For = 10 ⇒ Ratio = 9.08 x10
or LB
n E (0) = 1.78 x10 cm
13 −3
10.12
In the base of the transistor, we have
10.11
We have DB
2
a
d δn B ( x ) f − δn ( x) = 0 B
a f=
d δn B RSLMexpFG V IJ − 1OP
n BO dx
2
τ BO
F x I TN H V K Q
BE
or
sinhG J a
dx
HL K
B
B
t
d δn B ( x )
2
f − δn ( x) = 0
B
F −1 I F x − x IJ − 1 coshFG x IJ UV
2 2
dx LB
× G J coshG
H L K H L K L H L KW
B
where LB = DBτ BO
B B B B
At x = 0 , The general solution to the differential equation

d aδn f RSLMexpFG V IJ − 1OP is of the form,
(0) =
B
−n
F x I TN H V K Q
BO BE
δn B ( x ) = A exp
FG x IJ + B expFG − x IJ
dx
L sinh G J
HL K B
B t
HL K HL K B B
B
From the boundary conditions, we have
Fx I U
× coshG J + 1V
δn B ( 0) = A + B = n B ( 0) − n BO
HL K W
B
LM FG V IJ − 1OP
N HV K Q
B
= n BO exp BE
At x = x ,
d aδn f
B t
a
B
x f=
−n
Fx I
BO Also
F x I F − x IJ = −n
L sinhG J δn a x f = A expG J + B expG
B
dx
HL K HL K H L K
B B B
B B B BO
B B B
RL F V IJ − 1OP + coshFG x IJ UV
× S MexpG
From the first boundary condition, we can write
TN H V K Q H L K W
BE B
L F V IJ − 1OP − B
A = n MexpG
N HV K Q
BE
t B
BO
Taking the ratio, t
141
Substituting into the second boundary condition LM FG V IJ − 1OP ⋅ expFG x IJ + p

N HV K Q HL K
EB B
equation, we find p BO exp
L F x I F − x IJ OP
BO
B MexpG J − expG Fx I
B= t B
N H L K H L KQ
B B
2 sinhG J
HL K
B
B B
L F V IJ − 1OP ⋅ expFG x IJ + n
= n MexpG and then we obtain
B
N HV K Q HL K
BE B
BO
t B
BO
L F V IJ − 1OP ⋅ expFG − x IJ − p
− p MexpG
N HV K Q H L K
EB B
which can be written as BO BO
L F V IJ − 1OP ⋅ expFG x IJ + n
n MexpG
A=
Fx I
t B
N HV K Q HL K 2 sinh G J
BE B
HL K
BO BO B
B=
Fx I
t B
B
2 sinh G J Substituting the expressions for A and B into the

HL K
B
B
general solution and collecting terms, we obtain
We then find
δp B ( x ) = p BO
L F V IJ − 1OP ⋅ expFG − x IJ − n
− n MexpG R| LexpFG V IJ − 1O ⋅ sinhFG x − x IJ − sinhFG x IJ U|
N HV K Q H L K
BE B
| M H V K PQ H L K H L K |V
BO BO
×S N
EB B
A=
Fx I
t B
2 sinhG J Fx I
t B B
HL K || ||
B
sinhG J
H K
B
B
T L B W
10.13
In the base of the pnp transistor, we have
DB
2
a
d δp B ( x ) f − δp ( x) = 0 B
10.14
For the idealized straight line approximation, the
τ BO
2
dx total minority carrier concentration is given by
or LM FG V IJ OP ⋅ FG x − x IJ
a
d δp B ( x )
2
2
f − δp ( x) = 0
B
2
n B ( x ) = n BO exp
N H V KQ H x K
BE
t
B
dx LB The excess concentration is

δn B = n B ( x ) − nBO
where LB = DBτ BO
so for the idealized case, we can write
F x I F −xI δn BO ( x ) = n BO
RSLMexpFG V IJ OP ⋅ FG x − x IJ − 1UV
δp ( x ) = A expG J + B expG J TN H V K Q H x K W
BE B
B
HL K HL K B B
1
t B
From the boundary conditions, we can write At x = x B , we have

δp B (0) = A + B = p B (0) − p BO 2
LM FG V IJ − 1OP F 1 x I = n RS 1 LMexpFG V IJ OP − 1UV

N HV K Q = p BO exp EB
t
δn BO
H 2 K T2 N H V K Q W
B BO
BE
Also For the actual case, we have
F x I F − x IJ = − p
δp a x f = A expG J + B expG
F1 x I =n
B B
HL K H L K
B B
BO
δn B
H2 K B BO
B B
R| LexpFG V IJ − 1O ⋅ sinhFG x IJ − sinhFG x IJ U|
| M H V K PQ H 2 L K H 2 L K |V
From the first boundary condition equation, we
×S N
BE B B
find
LMexpFG V IJ − 1OP − B ||
t
Fx I
sinhG J ||
B B
A = p BO
N HV K Q
EB
H K
B
Substituting into the second boundary equation

T L B W
142
F 1 x I − δn F 1 x I
(a) For
xB
= 0.1 , we have H2 K H2 K
δnBO B B B
LB F1 x I
FG x IJ = 0.0500208 δn
H2 K BO B
H 2L K LMexpFG V IJ OP(0.50 − 0.4434) − 1.0 + 0.8868

B
sinh
N H V KQ
B BE
and
Fx I =
F V IJ − 1
t
sinhG J = 0.100167 expG

1
HL K HV K
B BE
B 2 t
Then which becomes

F 1 x I − δn F 1 x I FV I
(0.0566) expG J − (0.1132)
δn BO
H2 K H2 K B B B
HV K
BE
F1 x I F V IJ − 1
t
δn
H2 KBO B
1
2
expG
HV K
BE
LMexpFG V IJ OP ⋅ (0.50 − 0.49937) − 1.0 + 0.99875 F V IJ >> 1

t
N H V KQ Assuming that expG

BE
HV K
BE
=
F V IJ − 1
t
expG
t
1
HV K Then the ratio is
BE
2 t 0.0566
which becomes = = 0.1132 ⇒ 11.32%
FV I
(0.00063) expG J − (0.00125)
0.50
HV K
BE
10.15
=
F V IJ − 1
t
The excess hole concentration at x = 0 is
expG LM FG V IJ − 1OP = 8x10
1
HV K
BE
δp B ( 0) = p BO exp
N HV K Q
−3
2 t
EB 14
cm
If we assume that expG

F V IJ >> 1 , then we find t
HV K
BE
and the excess hole concentration at x = x B is
that the ratio is

t
a f
δp B x B = − pBO = −2.25x10 cm
4 −3
0.00063 From the results of problem 10.13, we can write

= 0.00126 ⇒ 0.126%
0.50 δp( x ) = p BO
(b)
R| LexpFG V IJ − 1O ⋅ sinhFG x − x IJ − sinhFG x IJ U|
| M H V K PQ H L K H L K |V
x
×S N
EB B
For B = 1.0 , we have
LB
Fx I
t B B
FG x IJ = 0.5211 || sinhG J
H K ||
B
sinh
H 2L K
B
B
T L BW
or
and
δp B ( x ) =
Fx I .
sinhG J = 11752
HL K b8x10 g sinhFGH x L− x IJK − b2.25x10 g sinhFGH Lx IJK
B
14 B 4
B
Then
Fx I
B B
sinhG J
HL K
B
Let x B = LB = 10 µm , so that
143
FG x IJ = 11752 a f
J xB = lb8x10 g cosh(0)
− eDB 14
HL K .
B
sinh
L sinh(1) B
+b2.25x10 g cosh(1)q
B
Then, we can find δp B ( x ) for (a) the ideal linear

4
approximation and for (b) the actual distribution or

−b1.6 x10 g(10)
as follow: −19
(a ) δp B (b) δpB
x =
b10x10 g(1175 . )
−4
× b8 x10 g(1) + b2.25x10 g(1543

14 14
0 8 x10 8 x10 . )
14 4
0.25 LB 6 x10
14
5.6 x10
14
We obtain
J a x f = −1.089 A / cm
14 14 2
0.50 LB 4 x10 3.55x10 B
14 14
0.75 LB 2 x10 1.72 x10 Then
1.0 LB −2.25x10
4
−2.25x10
4 J a x f −1.089 Jax f
= B
⇒ = 0.648 B
J ( 0) −1.68 J (0)
(c)
For the ideal case when x B << LB , then
a f
J (0) = J x B , so that
10.16
(a) npn transistor biased in saturation
Jax f a
d δn B ( x ) f − δn ( x) = 0
2
=1
B
DB B
J (0) τ BO
2
dx
For the case when x B = LB = 10 µm or
F x − x IJ a
d δn B ( x )
2
f − δn ( x) = 0
J ( 0) =
eDB
F x I dx l b 8 x10 g sinhG
d
H L K
14 B
dx
2
LB
B
2
sinhG J
HL K
B B
where LB = DBτ BO
B
F x IU
−b2.25 x10 g sinh G J V
FG x IJ + B expFG − x IJ
H L KW
4
δn B ( x ) = A exp
or
B x =0
HL K HL K B B
eD R −1 F x − x IJ If x << L , then also x << L so that

J ( 0) = S B
sinh(1) T L
b8 x10 g cosh G
H L K
14 B
B B
F x IJ + BFG1 − x IJ
B
δn ( x ) ≈ AG 1 +
B
F x IU
B
B
H LK H LK
−
1
b 2.25 x10 g cosh G J V
H L KW
4
F xI
B B
L = ( A + B ) + ( A − B )G J
HL K
B B x =0
which becomes B
⋅ lb8 x10 g cosh(1)

− eD which can be written as
=
F xI
B 14
L sinh(1)
δn ( x ) = C + DG J
HL K
B
+b2.25x10 g cosh(0)q
B
4
B
We find The boundary conditions are
−b1.6 x10 g(10)

−19
δn (0) = C = n MexpG
L F V IJ − 1OP
N HV K Q
BE
J ( 0) =
b10x10 g(1175
B BO
. )
−4
t
× b8 x10 g(1543 . ) + b2.25x10 g(1)

and
14 4
F x I L F V IJ − 1OP
δn a x f = C + DG J = n MexpG
HL K N HV K Q
B BC
or B B BO
J (0) = −1.68 A / cm
2 B t
Then the coefficient D can be written as

Now
144
F L I L F V IJ − 1OP LMexpFG V IJ − expFG V IJ OP

eDB p BO
JP =
N H V K H V KQ
EB CB
D = G J m n MexpG
Hx K N HV K Q x
B BC
BO B t t
B t We have
L F V IJ − 1OPUV
− n MexpG n b15. x10 g = 2.25x10 cm
2 10 2
N H V K QW
BE −3
p = = i 3
BO
BO 17
t NB 10
The excess electron concentration is then given Then
by
RSLMexpFG V IJ − 1OP ⋅ FG1 − x IJ 165 =
b1.6x10 g(10)b2.25x10 g−19 3
δn B ( x ) = n BO
TN H V K Q H L K
BE −4
0.7 x10
t B
L F 0.75 I − expFG V IJ OP
× Mexp
L F V IJ − 1OP ⋅ FG x IJ UV
+ MexpG N H 0.0259 K H V K Q
CB
N H V K Q H x KW
BC
t
or
F V IJ
t B
3.208 x10 = 3.768 x10 − expG

(b)
HV K
12 12 CB
The electron diffusion current density is
a f
J n = eDB
d δn B ( x )
which yields
t
V = (0.0259) lnb0.56 x10 g ⇒

dx 12
RL F V IJ − 1OP ⋅ FG −1IJ
= eD n S MexpG
CB
TN H V K Q H x K VCB = 0.70 V
BE
B BO
t B
(b)
L F V IJ − 1OP ⋅ FG 1 IJ UV
+ MexpG
VEC ( sat ) = VEB − VCB = 0.75 − 0.70 ⇒
N H V K Q H x KW
BC
t B
VEC ( sat ) = 0.05 V
or (c)
eD n R F V I F V IJ UV Again, extending the results of problem 10.16 to
S expG J − expG
J =−
T H V K H V KW
B BO BE BC
a pnp transistor, we can write
RSLMexpFG V IJ − 1OP + LMexpFG V IJ − 1OPUV
n
x B t t
epBO x B
Q pB =
TN H V K Q N H V K Q W
EB CB
(c)
The total excess charge in the base region is 2 t t
z
xB
QnB = − e δn B ( x )dx =
b1.6x10 −19
gb2.25x10 gb0.7 x10 g 3 −4
0 2
RL F V IJ − 1OP ⋅ FG x − x IJ
= − en S MexpG
2
× 3.768 x10 + 0.56 x10
12 12
TN H V K Q H 2 x K
BE
BO
or
t B
L F V IJ − 1OP ⋅ FG x IJ UV
−8
QpB = 5.45x10 C / cm
2
+ MexpG
2 xB
N H V K Q H 2x K W
BC
or
0
t B
Q pB
= 3.41x10 holes / cm
11 2
which yields
− en x R L F V I O
e
Q =
nB
2
STMNexpGH V JK − 1PQ
BO B BE
(d)
In the collector, we have
LM FG V IJ − 1OP ⋅ expFG − x IJ
t
L F V IJ − 1OPUV
+ MexpG δn p ( x ) = n PO exp
N HV K Q HL K
CB
N H V K QW
BC
t C
t
The total number of excess electrons in the
collector is
10.17
(a) Extending the results of problem 10.16 to a
pnp transistor, we can write
145
z
∞
N Coll = δn P ( x )dx
x p1 =
RS 2(11.7)b8.85x10 g(0.745 − 0.565)
−14
T
0
L F V IJ − 1OP ⋅ expFG − x IJ
−19
1.6 x10
= − n L MexpG
∞
N HV K Q HL K F 7 x10 IJ F 1 I UV
CB
1/ 2
×G
PO C 15
H 10 K H 7 x10 + 10 K W
t C 0
L F V IJ − 1OP
= n L MexpG
17 15 17
N HV K Q
CB
PO C or
t −6
We have
x p1 = 1.23x10 cm
n = PO
n
=
b1.5x10 g = 4.5x10 cm
2
i
10 2
4 −3
From the B-E space-charge region,
LMb10 gb10 g OP = 0.933 V
19 17
Vbi 2 = ( 0.0259 ) ln
15
NC 5 x10
Then the total number of electrons is MN b15. x10 g PQ 10 2
N Coll = 4.5x10 b 4
gb35x10 gb0.56x10 g −4 12
Then
or R 2(11.7)b8.85x10 g(0.933 + 2)
x =S
−14
N Coll = 8.82 x10 electrons / cm

13 2
Tp2
1.6 x10
−19
×G
F 10 IJ F 1 I UV 19 1/ 2
10.18
ni
2
b1.5x10 g 10 2 H 10 K H 10 + 10 K W 17 19 17
(b) n BO = = = 2.25 x10 cm

3 −3
or
17
NB 10 x p 2 = 1.94 x10 cm
−5
and
Now
pCO =
ni
2
=
b15. x10 g 10 2
= 3.21x10 cm
4 −3 x B = x BO − x p1 − x p 2 = 1.20 − 0.0123 − 0.194
NC 7 x10
15
or
At x = x B , x B = 0.994 µm
a f FG V IJ
n B x B = n BO exp
HV K
BC
10.19
t Low injection limit is reached when
= b 2.25 x10 g exp

F 0.565 I pC (0) = (0.10) N C , so that
H 0.0259 K b g = 5x10 cm
3
pC (0) = (0.10) 5x10

14 13 −3
or We have
a f
n B x B = 6.7 x10 cm
12 −3
ni
2
b15. x10 g = 4.5x10 cm
10 2
−3
pCO = =
5
At x ′′ = 0 ,
F V IJ
14
NC 5 x10
p (0) = p expG
HV K Also
BC
C CO
t
FG V IJ
= b3.21x10 g exp
F 0.565 I pC (0) = pCO exp
HV K
CB
H 0.0259 K
4
t
or
or
F p (0)IJ
= V lnG
pC (0) = 9.56 x10 cm
Hp K
C
13 −3
VCB t
(c) CO
From the B-C space-charge region,

= (0.0259 ) lnG
F 5x10 IJ 13
Vbi1
L b10 gb7 x10 g OP = 0.745 V
= (0.0259 ) ln M
17 15
H 4.5x10 K 5
MN b15. x10 g PQ 10 2
or
VCB = 0.48 V
Then
146
or
10.20 I C = 17.4 µA
(a)
(b)
J nC Base transport factor
α=
J nE + J R + J pE 1
=
118
.
⇒ α = 0.787
αT =
cosh x B LB a f
1.20 + 0.20 + 0.10 We find
(b)
J nE
LB = DBτ BO = b g
(20) 10 −7 = 1.41x10 −3 cm
γ = so that
J nE + J pE 1
=
1.20
⇒ γ = 0.923
αT =
cosh 1 14.1 a f
⇒ α T = 0.9975
1.20 + 0.10 Emitter injection efficiency

(c) Assuming DE = DB , x B = x E , and LE = LB ;
J nC 118
. then
αT = = ⇒ α T = 0.983
J nE 1.20 1 1
γ = = ⇒ γ = 0.909
(d) NB 10
17
1+ 1 + 18
J nE + J pE NE
δ = 10
J nE + J R + J pE Then
α = γα T δ = (0.909)(0.9975)(1) ⇒
1.20 + 0.10
= ⇒ δ = 0.867 α = 0.9067
1.20 + 0.20 + 0.10
and
(e)
α 0.9067
α 0.787 β= = ⇒ β = 9.72
β= = 1 − α 1 − 0.9067
1−α 1 − 0.787
or For I E = 15. mA ,
β = 3.69 I C = αI E = (0.9067 )(1.5) ⇒ I C = 1.36 mA
(c)
10.21 For I B = 2 µA ,
n BO =
ni
2
=
b1.5x10 g 10 2
= 2.25 x10 cm
3 −3
I C = βI B = (9.72 )(2 ) ⇒ I C = 19.4 µA
17
NB 10
Then 10.22
n B (0) = n BO exp
FG V IJ (a) We have
R| LMexpFG V IJ − 1OP U|
HV K
BE
eD n | N H V K Q |V
BE
S 1
t
= b 2.25 x10 g exp

F 0.50 I J = B
|| sinhFGH x IJK tanhFGH x IJK ||

BO
+ t
H 0.0259 K
nE
3
L B
T
B B
or
We find that
L B
L W B
n B (0) = 5.45x10 cm
b1.5x10 g = 4.5x10 cm
11 −3
10 2
2
n −3
As a good approximation, n = BO
=i 3
16
eDB An B ( 0) NB 5 x10
IC = and
xB
b1.6x10 g(20)b10 gb5.45x10 g
−19 −3 11 LB = DBτ BO = b g
(15) 5x10 −8 = 8.66 x10 −4 cm
= −4 Then
10
147
b1.6x10 g(15)b4.5x10 g
−19 3
F eV I
J nE =
8.66 x10
−4 H 2kT K
J R = J rO exp BE
R| F 0.60 I U| F 0.60 IJ
= b3 x10 g expG
H 0.0259 K V H 2(0.0259)K
−8
exp
×S
1
|T sinhFH 80..6670IK tanhFH 80..6670IK |W

+
or
−3
J R = 3.22 x10
2
A / cm
or (b)
J nE = 1.79 A / cm
2
Using the calculated currents, we find
We also have J nE 1.79
γ = = ⇒
LMexpFG V IJ − 1OP ⋅ 1
eDE p EO J nE + J pE 1.79 + 0.0425
J pE =
N H V K Q tanhFG x IJ
BE
L γ = 0.977
HL K
E t E
We find
E
Also J nC 1.78
αT = = ⇒ α T = 0.994
p EO =
n
=i
b1.5x10 g = 2.25x10 cm
2 10 2
2 −3
and
J nE 1.79
18
NE 10
J nE + J pE 1.79 + 0.0425
and δ = =
LE = DE τ EO = b g (8) 10 −8 = 2.83x10 −4 cm
or
J nE + J R + J pE 1.79 + 0.00322 + 0.0425
Then δ = 0.998
J pE =
b1.6x10 g(8)b2.25x10 g
−19 2
Then
2.83 x10
−4 α = γα T δ = (0.977 )(0.994 )(0.998) ⇒
LM F 0.60 I − 1OP ⋅ 1 α = 0.969
N H 0.0259 K Q tanhF 0.8 I

× exp Now
H 2.83K β=
α
=
0.969
1 − α 1 − 0.969
⇒ β = 31.3
or
J pE = 0.0425 A / cm
2
10.23
We can find 1 N B DE x B
R| LexpF 0.60 I − 1O U| (a) γ =
N B DE x B
≈ 1− ⋅ ⋅
N E DB x E
eD n | NM H 0.0259 K QP |V 1+ ⋅ ⋅
J nC =
L
B
S
B
BO
1
|| sinhFGH x IJK tanhFGH x IJK ||

+
or
N E DB x E
T
B
L W
B
L NB
B B γ ≈ 1− K ⋅
=
b1.6x10 g(15)b4.5x10 g
−19 3
(i)
NE
−4
8.66 x10
R| expF 0.60 I U| 1−
2 N BO
⋅K
×S
H K γ ( B) NE
|T sinhFH 8.66IK tanhFH 80.66.7 IK V|W

0.0259 1 =
+ γ ( A) N BO
0.7 1− ⋅K
NE
or FG 2 N BO IJ FG1 + N ⋅ KIJ
≈ 1−
H ⋅K
KH N K
BO
J nC = 1.78 A / cm
2
NE E
The recombination current is 2 N BO N BO

≈ 1− ⋅K+ ⋅K
NE NE
148
2
ni
or J sO ∝ nBO =
γ ( B) N BO DE x B NB
≈ 1− ⋅ ⋅ so
γ ( A) N E DB x E
δ ( B) 2 N BO K N BO K N BO K
(ii) ≈ 1− + = 1−
δ ( A) C C C
γ (C )
=1 Then
γ ( A)
FG −V IJ
H 2V K
BE
(b) (i) J rO exp
δ ( B)
α T ( B) ≈ 1−
FG eD n IJ
t
=1 δ ( A)
α T ( A)
H x K
B BO
B
(ii)
FG1 − 1 ⋅ a x 2fIJ 2 (ii)
We find
α (C ) H K FG −V IJ
BO
2 L
=
H 2V K
T B BE
J rO exp
α ( A) FG1 − 1 ⋅ x IJ 2
δ (C )
H 2 LK ≈ 1+
FG eD n IJ
T BO t
δ ( A)
H x K
B B BO
FG1 − x IJ B
H 2 L K ≈ FG1 − x IJ FG1 + x IJ
BO
(d)
≈
FG1 − x IJ H 2 L K H L K Device C has the largest β . Base transport
B BO BO
H LK factor as well as the recombination factor

BO B B
B increases.
x BO x BO
≈ 1− + 10.24
2 LB LB (a)
or 1 1
α T (C ) x BO γ = =
≈ 1+ N B DE x B NB
1+ ⋅ ⋅ 1+ K ⋅
α T ( A) 2 LB N E DB x E NE
(c) Neglect any change in space charge width. or
Then NB
1 γ ≈ 1− K ⋅
δ =
J −VBE FG IJ (i) Then
NE
1 + rO ⋅ exp
J sO 2Vt H K NB
J rO F −V IJ
⋅ expG
γ ( B)
1− K ⋅
2 N EO
≈ 1−
H 2V K =
BE
J sO γ ( A) NB
t
1− K ⋅
(i) N EO
K FG NB IJ ⋅ FG1 + K ⋅ N IJ
δ ( B)
1−
J sOB F K IJ FG1 + K IJ
≈ G1 − H
≈ 1− K ⋅
2 N EO KH N K
B
δ ( A)
=
1−
K H J KH J K sOB sOA NB NB
EO
J sOA ≈ 1− K ⋅ + K⋅
2 N EO N EO
K K
≈ 1− + or
J sOB J sOA NB
Now = 1+ K ⋅
2 N EO
or
149
γ ( B) NB DE xB
= 1+ ⋅ ⋅ (i)
γ ( A) 2 N EO DB x E
k
(ii)
δ ( B)
1−
J SOB FG k IJ FG1 + k IJ
Now
γ =
1
≈ 1− K′ ⋅
xB δ ( A)
=
1−
k
≈ 1−
H J SOB KH J K SOA
xB xE J SOA
1 + K′ ⋅
xE k k
≈ 1− +
Then J SOB J SOA
xB Now
1− K′ ⋅
γ (C )
=
a x 2f
EO J SO ∝
1
γ ( A) xB N E xE
1− K′ ⋅
x EO so
FG 2 xB IJ ⋅ FG1 + K ′ ⋅ x IJ (i)
H
≈ 1− K′ ⋅
x EO KH x K
B
EO
δ ( B)
δ ( A)
a f a f
= 1 − k ′ 2 N EO + k ′ N EO
xB xB or
≈ 1 − 2K ′ ⋅ + K′ ⋅
x EO
xB
x EO δ ( B)
δ ( A)
= 1 − k ′ ⋅ N EO a f
= 1− K′ ⋅
x EO (recombination factor decreases)
or (ii)
We have
γ (C )
= 1−
N B DE x B
⋅ ⋅ δ (C ) x F I a f
(b)
γ ( A) N E DB x EO
δ ( A) 2 H K
= 1 − k ′′ ⋅ EO + k ′′ ⋅ x EO
or
Fx I
= 1− G J
1
2
δ (C ) 1
2HL K
αT B
= 1 + k ′′ ⋅ x EO
B δ ( A) 2
so (recombination factor increases)
(i)
α T ( B) 10.25
=1
α T ( A) (b)
and
n BO =
ni
2
=
b1.5x10 g 10 2
= 2.25 x10 cm
3 −3
(ii) 17
NB 10
α T (C )
=1 Then
α T ( A)
FG V IJ
n B (0) = n BO exp
HV K
BC
(c)
Neglect any change in space charge width t
1 = b 2.25 x10 g exp

F 0.6 I = 2.59 x10
H 0.0259 K
3 13 −3
cm
δ =
J −VBE FG IJ
1 + rO exp
J SO 2Vt H K Now
eDB n B (0)
1 k J nC =
= ≈ 1− xB
k
1+
J SO
J SO
=
b1.6x10 g(20)b2.59 x10 g
−19 13
−4
10
or
150
J nC = 0.829 A / cm
2
Assuming a long collector,
expG
F V IJ
eDC pnO
NB NE γ β
J =
HV K
BC
pC 0.01 0.990 99
L C t 0.10 0.909 9.99
where 1.0 0.50 1.0
p =
n
nO
=
b15. x10 g = 2.25x10 cm
2
i
10 2
4 −3
10.0 0.0909 0.10
16
NC 10 (c)
and For x B LB < 0.10 , the value of β is
LC = DCτ CO = b g
(15) 2 x10 −7 = 1.73x10 −3 cm unreasonably large, which means that the base
transport factor is not the limiting factor. For
Then x B LB > 1.0 , the value of β is very small,
b1.6x10 g(15)b2.25x10 g expF 0.6 I
−19 4
which means that the base transport factor will
J pC =
1.73 x10 H 0.0259 K
−3 probably be the limiting factor.
or
If N B N E < 0.01 , the emitter injection
J pC = 0.359 A / cm
2
efficiency is probably not the limiting factor. If,

The collector current is however, N B N E > 0.01 , then the current gain
b g
I C = J nC + J pC ⋅ A = (0.829 + 0.359) 10 b g −3
is small and the emitter injection efficiency is
or probably the limiting factor.
I C = 119
. mA
10.27
The emitter current is We have
I E = J nC ⋅ A = (0.829) 10 b g −3
eDB n BO
or
I E = 0.829 mA
J sO =
a f
LB tanh x B LB
Now
10.26 n BO =
ni
2
=
b1.5x10 g 10 2
= 2.25 x10 cm
3 −3
17
(a) NB 10
1 αT and
αT =
cosh x B LBa f β=
1− αT LB = DBτ BO = b g (25) 10 −7 = 15.8 x10 −4 cm
x B LB αT β Then
0.01 0.99995 19,999 b1.6x10 g(25)b2.25x10 g
−19 3
0.10
1.0
0.995
0.648
199
1.84
J =
b15.8x10 g tanha0.7 15.8f
sO −4
10.0 0.0000908 ≈0 or
−10
J sO = 1.3 x10
2
A / cm
(b) Now
For DE = DB , LE = LB , x E = x B , we have 1
1 1 δ =
J rOFG −V IJ
γ =
a
1 + p EO n BO f = 1+ aN B
NC f 1+
J H 2V K
sO
⋅ exp BE
t
and
1
β=
γ =
2 x10 F −V IJ
⋅ expG
−9
1− γ 1+
H 2(0.0259)K
BE
−10
1.3 x10
or
151
(a) where
δ =
1
F −V I
LE = DE τ EO = b
(10) 5x10 −8 = 7.07 µm g
1 + (15.38) exp
H 0.0518 K BE
Then
1
and 0.9968 =
p EO F 10 I F 15.8 I tanha1.26 15.8f
(b)
δ
1+
n BO
⋅
H 25K H 7.07 K tanha0.5 7.07f
β= which yields
1− δ
Now p EO N
= 0.003186 = B
VBE δ β n BO NE
0.20 0.755 3.08 Finally
16
0.40 0.993 142 NB 10
0.60 0.99986 7,142 NE = = ⇒
0.003186 0.003186
−3
N E = 3.14 x10 cm
18
(c)
If VBE < 0.4 V , the recombination factor is likely
the limiting factor in the current gain. 10.29
−8
(a) We have J rO = 5 x10
2
A / cm
10.28 We find
For β = 120 =
1− α
α
⇒α =
β
1+ β n BO =
2
ni
=
b1.5x10 g 10 2
= 4.5 x10 cm
3 −3
16
So NB 5 x10
120 and
α=
121
= 0.9917
LB = DBτ BO = b g
(25) 10 −7 = 15.8 µm
Now Then
α = γα T δ = 0.9917 = (0.998) x
2
eDB n BO
where
x = α T = γ = 0.9968
J sO =
f
LB tanh x B LB a
We have b1.6x10 g(25)b4.5x10 g
−19 3
1
=
b15.8x10 g tanha x L f −4
αT =
FG IJ
= 0.9968 B B
xB or
cosh
LB H K . x10
114
−11
which means
xB
J sO =
a
tanh x B LB f
= 0.0801 We have
LB 1
We find
δ =
J rO FG −V IJ
b g = 15.8 µm 1+ ⋅ exp
H 2V K
BE
= (25) 10
−7
LB = DBτ BO J sO t
Then For T = 300 K and VBE = 0.55 V ,

x B ( max) = (0.0801)(15.8) ⇒ δ = 0.995 =
x B ( max) = 1.26 µm 1
We also have FG 5x10 IJ ⋅ tanhFG x IJ ⋅ expFG −0.55 IJ
−8
1+
H 114. x10 K H L K H 2(0.0259)K
B
1 −11
γ =
p D L tanh x B LB a f which yields
B
1 + EO ⋅ E ⋅ B ⋅
n BO DB LE tanh x E LE a f
152
xB 10.34
= 0.047 Metallurgical base width = 1.2 µm = x B + x n
LB
We have
or
b
x B = (0.047) 15.8 x10
−4
g ⇒ p BO =
2
ni
=
b15. x10 g 10 2
= 2.25 x10 cm
4 −3
16
x B = 0.742 µm NB 10
and
(b)
For T = 400 K and J rO = 5 x10
−8 2
p B (0) = p BO exp
FG V IJ
A / cm ,
HV K
EB
LM − E OP t
n BO (400) F 400I ⋅ exp

N (0.0259)a400 300f Q
g
= b 2.25 x10 g exp

F 0.625 I
H 0.0259 K
3
4
n BO (300)
=
H 300K L − E OP
exp M
g
N (0.0259) Q
−3
= 6.8 x10 cm
14
Now
For E g = 112
. eV ,
dp B FG p (0)IJ
n BO (400) J p = eDB = eDB
H x K
B
= 117
5
. x10 dx
n BO (300)
B
or =
b1.6x10 −19
g(10)b6.8x10 g 14
n BO ( 400) = 117 b
. x10
5
gb4.5x10 g 3
or
xB
−3
= 5.27 x10 cm
8
−3
1.09 x10
Then Jp =
b1.6x10 g(25)b5.27 x10 g
−19 8 xB
J sO =
b15.8x10 g tanha0.742 15.8f
−4
We have
R 2 ∈aV + V f FG N IJ FG 1 IJ UV 1/ 2
x =S
T e H N KH N + N KW
or n
bi R C
−5
J sO = 2.84 x10
2
A / cm B C B
and
Finally,
1 L b10 gb10 g OP = 0.635 V
V = ( 0.0259 ) ln M
16 15
δ =
5 x10
−8
LM −0.55 OP bi
MN b15. x10 g PQ 10 2
1+
2.84 x10
−5
⋅ exp
N 2(0.0259)a400 300f Q We can write
or
δ = 0.9999994 x =S
R 2(11.7)b8.85x10 gaV + V f −14
bi R
T n
1.6 x10
−19
10.30
×G
F 10 IJ F 1 I UV 15 1/ 2
Computer plot
H 10 K H 10 + 10 K W 16 15 16
10.31 or
x = lb1177 x10 gaV + V fq
1/ 2
Computer plot .
−10
n bi R
We know
10.32 −4
Computer plot x B = 1.2 x10 − xn
For VR = VBC = 5 V
10.33 −4 −4
x n = 0.258 x10 cm ⇒ x B = 0.942 x10 cm
Computer plot
Then
J p = 11.6 A / cm
2
For VR = VBC = 10 V ,
153
−4
x n = 0.354 x10 cm ⇒ x B = 0.846 x10 cm
−4 Neglecting the space charge width at the B-E
junction, we have
Then
x B = x BO − x p
J p = 12.9 A / cm
2
Now
For VR = VBC = 15 V ,
Vbi
L b3x10 gb5x10 g OP
= ( 0.0259 ) ln M
16 15
MN b1.5x10 g PQ
−4 −4
x n = 0.429 x10 cm ⇒ x B = 0.771x10 cm 10 2
Then
or
J p = 14.1 A / cm
2
Vbi = 0.705 V
(b) and
We can write
a
J p = g ′ VEC + VA f =S
R 2 ∈aV + V f FG N IJ FG 1 IJ UV 1/ 2
T e H N KH N + N KW
bi CB C
xp
where B C B
g′ =
∆J p
=
∆J p
=
14.1 − 11.6
=S
R 2(11.7)b8.85x10 gaV + V f −14
bi CB
∆VEC ∆VBC 10 T 1.6 x10

−19
or
×G
F 5x10 IJ F 1 I UV 15 1/ 2
g ′ = 0.25 mA / cm / V
H 3x10 K H 5x10 + 3x10 K W
2
16 15 16
Now
or
J p = 11.6 A / cm at
2
= lb6.163 x10 gaV + V fq

−11 1/ 2
xp
VEC = VBC + VEB = 5 + 0.626 = 5.626 V bi CB
Then Now, for VCB = 5 V , x p = 0.1875 µm , and

11.6 = (0.25) 5.625 + VA a f For VCB = 10 V , x p = 0.2569 µm
which yields (a)
VA = 40.8 V x BO = 1.0 µm
For VCB = 5 V , x B = 1.0 − 0.1875 = 0.8125 µm
10.35 We find Then
n BO =
2
ni
=
b1.5x10 g 10 2
= 7.5 x10 cm
3 −3
J=
1.312 x10
−2
= 161.5 A / cm
2
16 −4
NB 3 x10 0.8125 x10
and For VCB = 10 V , x B = 1.0 − 0.2569 = 0.7431 µm
n B (0) = n BO exp
FG V IJ Then
HV K
BE
−2
1.312 x10
J= = 176.6 A / cm
2
t
= b 7.5 x10 g exp

F 0.7 I 0.7431x10
−4
H 0.0259 K
3
We can write
or J=
∆J
∆VCE
a
VCE + VA f
n B ( 0) = 4.10 x10 cm
15 −3
where
We have
∆J ∆J 176.6 − 161.5
dn B eDB n B (0) = =
J = eDB = ∆VCE ∆VCB 5
dx xB
=
b1.6x10 g(20)b4.10x10 g
−19 15
Then
= 3.02 A / cm / V
2
or
xB
a
. = 3.02 5.7 + VA ⇒
1615 f
−2
VA = 47.8 V
1.312 x10
J=
xB
154
(b) 10.36
x BO = 0.80 µm Neglect the B-E space charge region
For VCB = 5 V , x B = 0.80 − 0.1875 = 0.6125 µm
n BO =
2
ni
=
b1.5x10 g 10 2
= 2.25 x10 cm
3 −3
Then NB 10
17
−2
1.312 x10 Then
J= = 214.2 A / cm
2
0.6125 x10
−4
FG V IJ
n B (0) = n BO exp
HV K
BE
For VCB = 10 V , x B = 0.80 − 0.2569 = 0.5431 µm
t
Then
F 0.60 I = 2.59 x10
H 0.0259 K
−2 −3
= 2.25 x10 exp
3 13
1.312 x10 cm
J= = 241.6 A / cm
2
−4
0.5431x10
Now dn B eDB n B (0)
J = eDB =
∆J ∆J 241.6 − 214.2 dx xB
= =
∆VCE ∆VCB 5
=
b1.6x10 g(20)b2.59 x10 g
−19 13
= 5.48 A / cm / V
2
xB
We can write or
J=
∆J
∆VCE
a
VCE + VA f J=
8.29 x10
xB
−5
or (a)
a
214.2 = 5.48 5.7 + VA ⇒ f Now x B = x BO − x p
VA = 33.4 V Now
(c) Lb10 gb10 g OP = 0.754 V
V = (0.0259 ) ln M
16 17
x BO = 0.60 µm
For VCB = 5 V , x B = 0.60 − 0.1875 = 0.4124 µm
bi
MN b15. x10 g PQ 10 2
Then Also
1.312 x10
−2
x =M
L 2 ∈aV + V f FG N IJ FG 1 IJ OP 1/ 2
N e H N KH N + N KQ
bi CB C
J= = 318.1 A / cm
2
p
−4
0.4125 x10 B C B
For VCB = 10 V , x B = 0.60 − 0.2569 = 0.3431 µm

=M
L 2(11.7)b8.85x10 gaV + V f −14
bi CB
Then
1.312 x10
−2 N 1.6 x10
−19
J= −4
= 382.4 A / cm
2
×G
F 10 IJ F 1 I OP 16 1/ 2
H 10 K H 10 + 10 K Q
0.3431x10
Now 17 16 17
∆J ∆J 382.4 − 318.1 or
= =
∆VCE ∆VCB x = b1177 x10 gaV + V f
1/ 2
5 .
−11
p bi CB
= 12.86 A / cm / V
2
For VCB = 1 V , x p (1) = 4.544 x10 cm
−6
We can write
For VCB = 5 V , x p (5) = 8.229 x10 cm
−6
J=
∆J
∆VCE
a
VCE + VA f Now
−4
so x B = x BO − x p = 11
. x10 − x p
a
318.1 = 12.86 5.7 + VA ⇒ f Then
For VCB = 1 V , x B (1) = 1.055 µm
VA = 19.0 V
For VCB = 5 V , x B (5) = 1.018 µm
So
∆x B = 1.055 − 1.018 ⇒
155
or NE ∆E g (meV ) γ α β
∆x B = 0.037 µm
(b) E17 0 0.5 0.495 0.98
Now E18 25 0.792 0.784 3.63
−5
8.29 x10 E19 80 0.820 0.812 4.32
J (1) = = 0.7858 A / cm
2
−4 E20 230 0.122 0.121 0.14
1.055 x10
and
−5
8.29 x10 10.38
J (5) = = 0.8143 A / cm
2
1.018 x10
−4
(a) We have
and 1
∆J = 0.8143 − 0.7858 γ =
p EO DE LB tanh x B LB a f
or
∆J = 0.0285 A / cm
2
1+ ⋅
n BO DB LE tanh x E LE a f
For x E = x B , LE = LB , DE = DB , we obtain
10.37 1 1
Let x E = x B , LE = LB , DE = DB
γ =
1+
pEO
=
bn N g expb∆E kT g
2
i E
bn N g
g
1+
Then the emitter injection efficiency is n BO 2
i B
1 1
γ = = or
p n
2
N 1
1 + EO 1 + iE ⋅ 2B
n BO N E niB
γ =
NB FG ∆E IJ
1+
H kT K
g
exp
where niB = ni
2 2
NE
For no bandgap narrowing, niE = ni . −3
2 2
For N E = 10 cm , we have ∆E g = 80 meV .
19
FG ∆E IJ , Then
H kT K
g
With bandgap narrowing, niE = ni exp
2 2
1
Then
0.996 =
NB F 0.080 I
1
1+
10
19
exp
H 0.0259 K
γ =
NB FG ∆E IJ which yields
1+
H kT K
g
exp N B = 183
. x10 cm
15 −3
NE
(a) (b)
No bandgap narrowing, so ∆E g = 0 . Neglecting bandgap narrowing, we would have
1 1
α = γα T δ = γ (0.995) . We find
2 γ = ⇒ 0.996 =
N N
1+ B 1 + 19B
NE 10
NE γ α β
which yields
E17 0.5 0.495 0.980 N B = 4.02 x10 cm
16 −3
E18 0.909 0.8999 8.99

E19 0.990 0.980 49
E20 0.9990 0.989 89.9 10.39
(a)
(b) ρL L ( S / 2)
Taking into account bandgap narrowing, we find R=
A
=
σA
=
eµ p N B Lx B a f
Then
156
4 x10
−4 Solving for S , we find
R=
b1.6x10 g(400)b10 gb100 x10 gb0.7 x10 g
−19 16 −4 −4 S = 2 Rµ p eN B Lx B
or = 2(273)(400) 1.6 x10 b gb10 g

−19 16
×b100 x10 gb0.7 x10 g

R = 893 Ω −4 −4
(b) or
b
V = IR = 10 x10
−6
g(893) ⇒ S = 2.45 µm
V = 8.93 mV
(c) 10.41
At x = 0 , (a)
FG V IJ FG −ax IJ
N B = N B (0) exp
n p (0) = n pO exp
HV K Hx K
BE
t B
S where
and at x =
2
,
F N (0) IJ > 0
a = lnG
H N a x fK
B
FG V − 0.00893IJ
n ′p (0) = n pO exp
B B
H V K
BE
and is a constant. In thermal equilibrium
t
dN B
Then J p = eµ p N B Ε − eD p =0
n expG
F V − 0.00893IJ dx
H V K so that
BE
n ′ ( 0)
F I
pO
D p 1 dN B kT 1 dN B
F V IJ
p
= t
n ( 0)
n expG
Ε= ⋅
µ p N B dx
⋅
H K
= ⋅ ⋅
HV K e N B dx
p BE
pO
which becomes
F −0.00893I = 0.7084
t
= exp
H 0.0259 K F kT I ⋅ 1 ⋅ N (0) ⋅ FG −a IJ ⋅ expFG −ax IJ
Ε=
H eK N Hx K H x K
B
B
B B
or
n ′p (0) F kT I ⋅ FG −a IJ ⋅ 1 ⋅ N
n p ( 0)
= 70.8% =
H eK Hx K N B B
B
or
FG a IJ F kT I
10.40
From problem 10.39(c), we have
Ε=−
H x KH e K
FG IJ
B
n ′p (0) −V which is a constant.

n p ( 0)
= exp
Vt H K (b)
The electric field is in the negative x-direction
where V is the voltage drop across the S 2 which will aid the flow of minority carrier
length. Now electrons across the base.
−V F I (c)
0.90 = exp
0.0259 H K J n = eµ n nΕ + eDn
dn
dx
which yields V = 2.73 mV
We have Assuming no recombination in the base, J n will
−3 be a constant across the base. Then
R= =
V 2.73 x10
= 273 Ω dnFG µ IJ nΕ = J dn FG Ε IJ
dx H D K HV K
−6
I 10 x10 + n n
= +n
We can also write eD
n n
dx t
S 2 F kT I
R=
eµ p N B Lx B a f where V =
HeKt
157
The homogeneous solution to the differential

equation is found from 10.43
dn H We want BVCEO = 60 V
+ An H = 0
dx So then
Ε BVCBO BVCBO
where A = BVCEO = ⇒ 60 =
Vt
n
β 3
50
The solution is of the form which yields
n H = n H ( 0) exp( − Ax ) BVCBO = 221 V
The particular solution is found from For this breakdown voltage, we need
−3
N C ≈ 1.5 x10 cm
15
nP ⋅ A = B
Jn The depletion width into the collector at this
where B = voltage is
eDn
The particular solution is then RS 2 ∈aV + V f FG N IJ FG 1 IJ UV 1/ 2
FG J IJ x C = xn =
T e H N KH N + N K W
bi BC B
B H eD K
n C B C
JV J We find
nP =
A
=
FG Ε IJ eD Ε eµ Ε
= = n n t n
Lb1.5x10 gb10 g OP = 0.646 V
V = (0.0259 ) ln M
15 16
HV K MN b15. x10 g PQ
n n
bi 2
10
t
The total solution is then and VBC = BVCEO = 60 V

Jn
n= + n H ( 0) exp( − Ax ) so that
eµ n Ε
xC
R 2(11.7)b8.85x10 g(0.646 + 60)
=S
−14
and
FG V IJ = n expFG V IJ 2 T 1.6 x10
−19
n(0) = n pO exp
H V K N (0) H V K
BE i BE
×G
F 10 IJ F 1 I UV 16 1/ 2
Then
t B t
H 1.5x10 K H 10 + 15. x10 K W15 16 15
n (0) =
n F V IJ − J
expG
2 or
H V K eµ Ε x C = 6.75 µm
i BE n
N ( 0)
H
B t n
10.44
10.42
(a) The basic pn junction breakdown voltage
LM b3x10 gb5x10 g OP = 0.824 V
Vbi = ( 0.0259 ) ln
16 17
from the figure for N C = 5 x10 cm

15 −3
is MN b15. x10 g PQ 10 2
approximately BVCBO = 90 V . At punch-through, we have

x = 0.70 x10 = x aV = V f − x aV = 0f
−4
(b) B p BC th p BC
We have
BVCEO = BVCBO n 1 − α =S
R 2 ∈bV + V g FG N IJ FG 1 IJ UV 1/ 2
T e H N KH N + N KW
bi pt C
For n = 3 and α = 0.992 , we obtain B C B
BVCEO = 90 ⋅ 1 − 0.992 = (90)(0.20)

3
R 2 ∈V FG N IJ FG 1 IJ UV
−S
1/ 2
T e H N KH N + N KW
bi C
or
B C B
BVCEO = 18 V
which can be written as
(c)
The B-E breakdown voltage, for
−3
N B = 10 cm , is approximately,
17
BVBE = 12 V
158
g = RST 2(11.7)b18.6.85x10x10 g(25)

−4 −14
0.70 x10
RS 2(11.7)b8.85x10 gbV + V g −14
bi pt
b0.75x10 −4
−19
=
T 1.6 x10
−19
×G
F 10 IJ FG 1 IJ UV
16 1/ 2
×G
F 5x10 IJ F 1 I UV 17 1/ 2
H N K H 10 + N K W 16
H 3x10 K H 5x10 + 3x10 K W

16 17 16
We obtain
B B
R 2(11.7)b8.85x10 g(0.824)
−S
−14 N B = 1.95x10 cm
16 −3
T 1.6 x10
−19
10.47
×G
F 5x10 IJ F 1 I UV 17 1/ 2
F kT I ⋅ lnLM I a1 − α f + I ⋅ α OP
H 3x10 K H 5x10 + 3x10 K W16 17 16
H e K Nα I − a1 − α fI α Q
VCE ( sat ) = C
F B
R
F
B
C
F
R
which becomes We can write
0.70 x10 = b0.202 x10 g V + V F V (sat )I = (1)(1 − 0.2) + I F 0.99 I
−4 −4
−b0.183 x10 g
bi pt
−4
exp
H 0.0259 K (0.99)I − (1 − 0.99)(1) H 0.20 K
CE
B
B
or
F V (sat )I = FG 0.8 + I IJ (4.95)
We obtain
Vbi + Vpt = 19.1 V
or
exp
H 0.0259 K H 0.99 I − 0.01K
CE
B
B
Vpt = 18.3 V (a)

For VCE ( sat ) = 0.30 V , we find
Considering the junction alone, avalanche
breakdown would occur at approximately F 0.30 I = 1.0726x10
H 0.0259 K
5
exp
BV ≈ 25 V .
=G
F 0.8 + I IJ (4.95)
10.45
H 0.99 I − 0.01K
B
(a) Neglecting the B-E junction depletion width,

a f
B
eWB
2
N B NC + NB We find
Vpt = ⋅ I B = 0.01014 mA
2∈ NC
R|b1.6x10 gb0.5x10 g
=S
−19 −4 2
(b)
|T 2(11.7)b8.85x10 g −14
I B = 0.0119 mA
b10 gb10 + 7 x10 g UV 17 17 15 (c)

⋅
b7 x10 g W 15
I B = 0.105 mA
or
Vpt = 295 V
10.48
However, actual junction breakdown for these For an npn in the active mode, we have VBC < 0 ,
doping concentrations is ≈ 70 V . So punch-
FG V IJ ≈ 0 .
through will not be reached.
HV K
BC
so that exp
t
10.46 Now
At punch-through, I E + I B + IC = 0 ⇒ I B = − IC + I E a f
R 2 ∈bV + V g ⋅ FG N IJ FG
=S
1 IJ UV 1/ 2
Then we have
T e H N KH N + N KW
bi pt C
xO
B B C
Since Vpt = 25 V , we can neglect Vbi .

Then we have
159
RS LM FG V IJ − 1OP + I UV FG V IJ ≈ 0 and
N HV K Q W
I B = − α F I ES exp For VBC < ≈ 0.1 V , exp
HV K
BE BC
T t
CS
t
R L F V IJ − 1OPUV
− S−α I − I MexpG
I C ≈ constant. This equation does not include
N H V K QW
BE
T R CS ES
t
the base width modulation effect.
For VBE = 0.2 V ,
or
L F V IJ − 1OP − a1 − α fI
= a1 − α f I MexpG
I C = (0.98) 10 b g expFH 0.0250
−13 0.2 I
K + 5x10
−13
N HV K Q
BE
IB F ES R CS
t
or
−10
I C = 2.22 x10 A
10.49
We can write For VBE = 0.4 V ,
LMexpFG V IJ − 1OP I C = 5 x10
−7
A
N HV K Q
BE
I ES
t For VBE = 0.6 V ,
L F V IJ − 1OP − I
= α I MexpG
I C = 113
. x10
−3
A
N HV K Q
BC
R CS E
t
Substituting, we find 10.51
I = α kα I MexpG
L F V IJ − 1OP − I p Computer Plot
N HV K Q
BC
C F R CS E
t 10.52
L F V IJ − 1OP
− I MexpG
(a)
F kT I ⋅ 1 = 0.0259 = 518. Ω
N HV K Q
BC
rπ′ =
H e K I 0.5x10
CS
t −3
From the definition of currents, we have E
I E = − I C for the case when I B = 0 . Then So

. )b0.8 x10 g ⇒
LM FG IJ − 1OP = r ′C = (518
−12
τe π
VBC je
N HV K Q
I C = α F α R I CS exp
t
or
τ e = 41.4 ps
L F V IJ − 1OP
+α I − I MexpG
Also
N HV K Q
BC
When a C-E voltage is applied, then the B-C

F C CS
t
τb =
xB
2
=
b0.7 x10 g −4 2
⇒
2(25)
becomes reverse biased, so expG
F V IJ ≈ 0 . Then 2 Dn
HV K or
BC
t τ b = 98 ps
I C = −α F α R I CS + α F I C + I CS We have
We find
I 1 − α Fα R a f b g
τ c = rc Cµ + Cs = (30)(2) 0.08 x10 b −12
g⇒
or
I C = I CEO = CS
1− α F a f τ c = 4.8 ps
Also
10.50 xdc 2 x10
−4
We have τd = = ⇒
LM FG V IJ − 1OP
+7
vs 10
I C = α F I ES exp
N HV K Q or
BE
t τ d = 20 ps
LM FG V IJ − 1OP (b)
N HV K Q
− I CS exp BC
τ ec = τ e + τ b + τ c + τ d
t
= 41.4 + 98 + 4.8 + 20 ⇒
160
or 10.54
τ ec = 164.2 ps We have
Then τ ec = τ e + τ b + τ d + τ c
1 1 We are given
fT =
2πτ ec
=
b
2π 164.2 x10
−12
g⇒ τ b = 100 ps and τ e = 25 ps
We find
or −4
xd 1.2 x10
f T = 970 MHz τd = = 7
= 1.2 x10
−11
s
vs 10
Also
or
fT 970
fβ = = ⇒ τ d = 12 ps
β 50 Also
or
f β = 19.4 MHz
b
τ c = rc Cc = (10) 0.1x10
−12
g = 10 −12
s
or
τ c = 1 ps
10.53 Then
τb =
xB
2
=
b0.5x10 g −4 2
= 6.25 x10
−11
s
τ ec = 25 + 100 + 12 + 1 = 138 ps
2 DB 2(20) We obtain
1 1
We have τ b = 0.2τ ec , fT = =
b = 115
g
9
−12
. x10 Hz
So that 2πτ ec 2π 138 x10
τ ec = 3125
. x10 s
−10 or
Then f T = 115
. GHz
1 1
fT = =
2πτ ec 2π 3125
. x10
−10
⇒
b g
or
f T = 509 MHz
161
(page left blank)
162
Chapter 11
Problem Solutions Then
L 4(16)b8.85x10 g(0.156) OP
=M
−14 1/ 2
N b1.6x10 gb10 g Q
11.1 x dT −19 16
(a) p-type, inversion
(b) p-type, depletion or
(c) p-type, accumulation x dT = 0.235 µm
(d) n-type, inversion
Then
11.2 ′ ( max ) = 3.76 x10 C / cm
QSD
−8 2
(a) For T = 300 K (b)

Silicon: For T = 200 K ,
FG N IJ F 200 I = 0.01727 V
φ p = Vt ln
Hn K Vt = (0.0259 )
H 300 K
a
F 10 IJ = 0.347 V
= (0.0259 ) lnG
16
Silicon: ni = 7.68 x10 cm
4 −3
H 15. x10 K 10
We obtain φ p = 0.442 V and
Now ′ ( max ) = 5.4 x10 C / cm
x dT = 0.388 µm , QSD
−8 2
x =M
L 4 ∈φ OP p
1/ 2
GaAs: ni = 1.38 cm
−3
N eN Q
dT
a We obtain φ p = 0.631 V and
=M
L 4(11.7)b8,85x10 g(0.347) OP −14 1/ 2
′ ( max ) = 6.85x10 C / cm
x dT = 0.428 µm , QSD
−8 2
N b1.6x10 gb10 g Q −19 16

Germanium: ni = 2.16 x10 cm
10 −3
or
We obtain φ p = 0.225 V and
x dT = 0.30 µm
′ ( max) = 4.5 x10 C / cm
x dT = 0.282 µm , QSD
−8 2
Also
′ ( max) = eN a x dT
QSD
b
= 1.6 x10
−19
gb10 gb0.30x10 g
16 −4 11.3
(a) We want QSD′ ( max) = 7.5x10 C / cm −9 2
or
We have
′ ( max) = 4.8 x10 C / cm
QSD
−8 2
′ ( max) = eN d xdT
QSD
GaAs: where
φ p = ( 0.0259) ln
FG 10 IJ = 0.581 V 16
L 4 ∈φ OP 1/ 2
FG N IJ
H 18. x10 K 6 x dT =M
N eN Q d
fn
and φ f n = Vt ln
Hn K
d
i
and
For n-type silicon,
L 4(131. )b8.85x10 g(0.581) OP
=M
−14 1/ 2
′ ( max) = 7.5x10
QSD
−9
= 4 eN d ∈ φ f n
1/ 2
N b1.6x10 gb10 g Q
x dT −19 16
or b g(11.7)b8.85x10 g N φ
= 4 1.6 x10
−19 −14
d fn
1/ 2
x dT = 0.410 µm or
Then b7.5x10 g = b6.63x10 g N φ
−9 2 −31
d fn
′ ( max ) = 6.56 x10 C / cm

QSD
−8 2
which yields
N d φ f n = 8.48 x10
13
Germanium:
φ p = ( 0.0259) ln
FG 10 IJ = 0.156 V
16
and
H 2.4 x10 K 13
167
F N I FG E − φ IJ ⇒ −0.35 = −b0.56 − φ g
φ f n = (0.0259) ln
H 15. x10 Kd
10
φ ms = −
H 2e K
g
fn fn
By trial and error or

N d = 3.27 x10 cm
14 −3
F N I
(b)
φ fn = 0.21 = (0.0259 ) ln
H 1.5x10 K d
10
φ s = −2φ f n which yields

−3
N d = 4.98 x10 cm
13
where
φ fn = (0.0259) ln
FG 3.27 x10 IJ = 0.259 V
14
(b)
H 15. x10 K 10 +
p polysilicon gate:
Then FG E + φ IJ ⇒ −0.35 = b0.56 + φ g
φ ms =
H 2e K
g
φ s = −0.518 V fn fn
or
11.4 φ fn = −0.91 V
p-type silicon
+
(a) Aluminum gate This is impossible, cannot use a p polysilicon
LM FG E + φ IJ OP gate.
N H 2e K Q
φ ms = φ ′m − χ ′ +
g
fp (c)
Aluminum gate:
We have
F N IJ = (0.0259) lnFG 6x10 IJ
Eg FG IJ
φ = V lnG
fp
Hn K t
a
H 15. x10 K
15
10
φ ms = φ ′m − χ ′ +
2e H
− φ fn
K
i or
Or
φ f p = 0.334 V
b
−0.35 = 3.20 − 3.25 + 0.56 − φ fn g
which yields
Then
F N I
or
φ ms = 3.20 − (3.25 + 0.56 + 0.334) φ fn = 0.26 = ( 0.0259) ln
H 15. x10 K d
10
or finally,
φ ms = −0.944 V −3
N d = 3.43 x10 cm
14
(b)
+
n polysilicon gate:
Eg FG IJ
+ φ f p = −(0.56 + 0.334 )
11.6
QSS′
φ ms = −
2e H K VFB = φ ms −
Cox
and Cox =
∈ox
t ox
or
(a)
φ ms = −0.894 V °
For t ox = 500 A
(c)
Then
b g = 6.9 x10
+
p polysilicon gate:
(3.9) 8.85x10 −14
F − φ IJ = (0.56 − 0.334)
=G
Eg Cox =
−8
F / cm
2
φ ms
H 2e K
−8
fp
500 x10
+
n polygate-to-n type silicon,
or
Eg FG IJ
φ ms = +0.226 V φ ms = −
2e H
− φ fn
K
where
11.5
We want, for n-type silicon, φ ms = −0.35 V . F 10 IJ = 0.288 V
= (0.0259 ) lnG
15
+
(a) n polysilicon gate:
φ fn
H 15. x10 K 10
Then
168
φ ms = −(0.56 − 0.288) = −0.272 V QSS′ = 1.92 x10 C / cm

−9 2
For QSS′ = 10 cm , we have

10 −2
(i) or
VFB = −0.272 −
b1.6x10 gb10 g −19 10 QSS′
= 1.2 x10 cm
10 −2
−8 e
6.9 x10
or
VFB = −0.295 V 11.8
(ii) For QSS′ = 10 cm ⇒

11 −2
a
′ ( max) − QSS′
VTN = QSD fFGH ∈t IJK + φ + 2φ ox
ms fp
VFB = −0.504 V ox
We find
(iii) For QSS′ = 5x10 cm ⇒
11 −2
φ = (0.0259) lnG
F 2 x10 IJ = 0.306 V 15
(b)
VFB = −1.43 V fp
H 15. x10 K 10
and
L 4(11.7)b8.85x10 g(0.306) OP
°
For t ox = 250 A , we find −14
1/ 2
x =M
N b1.6x10 gb2 x10 g Q
−7
Cox = 1.38 x10
2
F / cm dT −19 15
Then
or
For QSS′ = 10 cm ⇒ VFB = −0.284 V
10 −2
(i)
x dT = 0.629 µm
For QSS′ = 10 cm ⇒ VFB = −0.388 V
11 −2
(ii) Also
(iii) For QSS′ = 5x10 cm ⇒
11 −2 QSD b gb
′ ( max ) = 1.6 x10 −19 2 x1015 0.629 x10 −4 gb g
VFB = −0.852 V or
QSD′ ( max ) = 2.01x10 C / cm −8 2
11.7 and
FG IJ Eg b
QSS′ = 2 x10 1.6 x10
11
gb
−19
g
2e H
φ ms = φ ′m − χ ′ +
K + φ fp or
QSS′ = 3.2 x10 C / cm
−8 2
where
F 2 x10 IJ = 0.365 V
φ = ( 0.0259) lnG
16 Then
b2.01x10 gb450x10 g
fp
H 1.5x10 K 10
−8
− 3.2 x10
−8 −8
(3.9)b8.85x10 g
VTN = −14
Then
φ ms = 3.20 − (3.25 + 0.56 + 0.365) = −0.975 V +φ ms + 2(0.306)
Now or
Q′
VFB = φ ms − SS ⇒ QSS′ = φ ms − VFB Cox
Cox
a f (a)
VTN = 0.457 + φ ms
For an aluminum gate:

We have
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g Then
φ ms = 3.20 − (3.25 + 0.56 + 0.306) = −0.916 V
−8
t ox 450 x10 VTN = 0.457 − 0.916
or\ or
Cox = 7.67 x10 F / cm
−8 2
VTN = −0.459 V
so now (b)
QSS′ = −0.975 − ( −1) ⋅ 7.67 x10
−8
b g +
For an n polygate:
or φ ms = −(0.56 + 0.306) = −0.866 V
so that
VTN = −0.409 V
169
(c) VTP = −1.44 V

+
For a p polygate: (c)
φ ms = (0.56 − 0.306) = +0.254 V +
p polygate:
so that φ ms = +(0.56 + 0.288) = +0.848 V
VTN = +0.711 V so
VTP = −0.322 V
11.9
We find
F 10 IJ = 0.288 V
= (0.0259 ) lnG
15
11.10
F 5x10 IJ = 0.329 V
H 15. x10 K = (0.0259 ) lnG
15
φ fn
So
10
φ fp
H 15. x10 K 10
Surface potential:
=M
L 4 ∈φ OPfn
1/ 2
φ s = 2φ fp = 2(0.329) = 0.658 V
x dT
N eN Q
d We have
=M
L 4(11.7)b8.85x10 g(0.288) OP−14 1/ 2
VFB = φ ms −
QSS′
= −0.90 V
N b1.6x10 gb10 g Q −19 15
Now
Cox
or ′ ( max)
QSD
x dT = 0.863 µm VT = + φ s + VFB
Cox
Also
′ ( max) = eN d xdT We obtain
QSD
b
= 1.6 x10
−19
gb10 gb0.863x10 g
15 −4
x dT
L 4 ∈φ OP
=M
fp
1/ 2
or N eN Q a
QSD ′ ( max ) = 1.38 x10 C / cm −8 2

L 4(11.7)b8.85x10 g(0.329) OP
=M
−14 1/ 2
We have
QSS′ = 3.2 x10 C / cm
−8 2 N b1.6x10 gb5x10 g Q −19 15
or
Now
x dT = 0.413 µm
F t IJ + φ − 2φ
= −a Q ′ ( max) + Q ′ fG Then
H∈ K
ox
VTP
so
SD SS
ox
ms fn
QSD b
′ ( max) = 1.6 x10 −19 5 x1015 0.413 x10 −4 gb gb g
or
b1.38x10 + 3.2 x10 g b450x10 g
−8 −8
−8 ′ ( max ) = 3.30 x10 C / cm
QSD
−8 2
(3.9)b8.85x10 g
VTP =− −14
We also find
+φ ms − 2( 0.288)
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
or t ox 400 x10
VTP = −117. + φ ms or
(a) Cox = 8.63 x10
−8
F / cm
2
Aluminum gate:
Then
φ ms = 3.20 − (3.25 + 0.56 − 0.288) = −0.322 V −8
3.30 x10
so VT = + 0.658 − 0.90
−8
VTP = −1.49 V 8.63 x10
or
(b)
+ VT = +0.140 V
n polygate:
φ ms = −(0.56 − 0.288) = −0.272 V
so
170
F N I
11.11 φ fn = (0.0259) ln
H 15. x10 K d
fFGH ∈t IJK + φ
10
a
VTN = QSD ox
+ 2φ fp Also
ox
ms
L 4 ∈φ OP
=M
fn
1/ 2
We have
F E + φ IJ
x dT
N eN Q
φ = φ′ − G χ′ +
d
H 2e K
g
ms m fp
Also
′ ( max ) = eN d x dT = 4 ∈ eN d φ fn
1/ 2
= 3.20 − b3.25 + 0.56 + φ g

QSD
fp
Now the threshold voltage can be written as
or −150
.
Also
φ ms = −0.61 − φ fp
o
= − 4(11.7 ) 8.85 x10b gb1.6x10 g N φ −14 −19
d fn
1/ 2
L 4 ∈φ OP 1/ 2 L 750x10 OP
+1.6 x10 q ⋅ M
−8
=M
−8
N (3.9)b8.85x10 g Q
fp
x dT
N eN Q a
−0.61 + φ fn − 2φ fn
−14
and
′ ( max ) = eN a xdT = 4 eN a ∈ φ fp which becomes
1/ 2
QSD
Then, the threshold voltage can be written as 0.542 = 1.77 x10
−8
bN φ g d fn
1/ 2
+ φ fn
+0.80 By trial and error
= l 4b1.6x10 g b −19
g
(11.7) 8.85x10 −14 N a φ fp
1/ 2
N d = 7.7 x10 cm
14 −3
L 750x10
−1.6 x10 q ⋅ M
−8
−8
OP
N (3.9)b8.85x10 −14
gQ 11.13
(a) VFB = φ ms −
QSS′
−0.61 − φ fp + 2φ fp
Cox
which becomes Now
bN φ g + φ
1.758 = 1.77 x10
−8
a fp
1/ 2
fp
φ fp = (0.0259) ln
FG 10 IJ = 0.288 V 15
We also have H 15. x10 K 10
F N I
φ = (0.0259) ln
fp
H 15. x10 K a
10
and
F E + φ IJ
= φ′ − G χ′ +
φ ms
H 2e K
g
By trial and error m fp
−3
N a = 1.71x10 cm
16
= 3.20 − (3.25 + 0.56 + 0.288) = −0.898 V

We find
11.12
We have Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
fFGH ∈t IJK + φ
−8
VTP = − QSD a
′ ( max) + QSS′ ox
ms
− 2φ fn or
t ox 450 x10
ox −8
Cox = 7.67 x10
2
We find F / cm
F E − φ IJ
φ = φ′ − G χ′ +
Then
b3x10 gb1.6x10 g
H 2e K
g
11 −19
ms m fn
VFB = −0.898 −
= 3.20 − b3.25 + 0.56 − φ g
−8
7.67 x10
fn
or
or VFB = −152
. V
φ ms = −0.61 + φ fn
where
171
(b) QSD′ ( max ) = 1.38 x10 C / cm −8 2
We have
We find
Q ′ ( max)
VT = SD
Cox
+ 2φ fp + VFB b gb g
QSS′ = 1.6 x10
−19 10 −9
10 = 1.6 x10 C / cm
2
We then find
−b1.38 x10 + 1.6 x10 g
We find −8 −9
L 4(11.7)b8.85x10 g(0.288) OP
=M
−14 1/ 2
V =
T
(3.9)b8.85x10 g
b500x10 g
−14
−8
N b1.6x10 gb10 g Q
x dT −19 15
−0.272 − 2(0.288)
or
or
x dT = 0.863 µm
VT = −1.07 V
We obtain
QSD b
′ ( max) = 1.6 x10 −19 1015 0.863 x10 −4 gb gb g 11.15
or
FG Eg IJ
QSD
Then
′ ( max ) = 1.38 x10 C / cm −8 2
H
(b) φ ms = φ ′m − χ ′ +
2e
+ φ fp
K
−8
where
1.38 x10 φ ′m − χ ′ = −0.20 V
VT = −8
+ 2(0.288) − 1.52
7.67 x10 and
or
φ fp = (0.0259) ln
FG 10 IJ = 0.347 V
16
VT = −0.764 V
H 15. x10 K 10
Then
11.14
(a) We have n-type material under the gate, so
φ ms = −0.20 − (0.56 + 0.347 )
x =t =M
L 4 ∈φ OP fn
1/ 2 or
φ ms = −111
. V
dT
N eN Q
C
d (c)
where For QSS′ = 0 ,
F 10 IJ = 0.288 V
φ = (0.0259) lnG
15
FG t IJ + φ + 2φ
fn
H 15. x10 K 10 ′ ( max )
VTN = QSD
H∈ K
ox
ox
ms fp
Then
We find
x =M
L 4(11.7)b8.85x10 g(0.288) OP −14 1/ 2
L 4(11.7)b8.85x10 g(0.347) OP −14 1/ 2
x =M
N b1.6x10 gb10 g Q
dT −19 15
dT
N b1.6x10 gb10 g Q −19 16
or
or
x dT = t C = 0.863 µm
x dT = 0.30 µm
(b) Now
a
′ ( max) + QSS′
VT = − QSD fFGH ∈t IJK + φ
ox
ms
− 2φ fn
or
QSD b gb gb
′ ( max) = 1.6 x10 −19 1016 0.30 x10 −4 g
ox
+
For an n polygate: QSD′ ( max) = 4.8 x10 C / cm −8 2
Eg FG IJ Then
φ ms = −
2e
− φ fn = −( 0.56 − 0.288)
H K b4.8x10 gb300x10 g − 111. + 2(0.347)
−8 −8
(3.9)b8.85x10 g
VTN = −14
or
φ ms = −0.272 V or
Now VTN = +0.0012 V
QSD b
′ ( max) = 1.6 x10 −19 1015 0.863 x10 −4 gb gb g
or
172
11.16 x dT = 0.30 µm
Computer plot so that
11.17 ′ =
b
(3.9) 8.85x10 −14 g
Computer plot
Cmin
F 3.9 I b0.30x10 g
H 11.7 K
−8 −4
400 x10 +
11.18 or
Computer plot
′ = 2.47 x10
Cmin
−8
F / cm
2
11.19 Also
Computer plot C ′(inv ) = Cox = 8.63 x10
−8 2
F / cm
(b)
11.20 For f = 1 MHz , we have
(a) For f = 1 Hz
−8
Cox = 8.63 x10
2
We have F / cm
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g ′ = 6.43x10
C FB
−8
F / cm
2
−8
t ox 400 x10 ′ = 2.47 x10
Cmin
−8
F / cm
2
or and
−8
Cox = 8.63 x10
2
F / cm C ′(inv ) = Cmin
′ = 2.47 x10 −8 F / cm 2
and (c)
∈ox QSS′
′ =
C FB
FG ∈ IJ F kT I FG ∈ IJ VFB = φ ms −
Cox
t ox +
H ∈ K H e K H eN K
ox s
s a For the ideal MOS capacitor, QSS′ = 0 , then

(3.9)b8.85x10 g −14
VFB = φ ms = 3.2 − (3.25 + 0.56 + 0.347 )
=
F 3.9 I (0.0259)(11.7)b8.85x10 g −14 or
VFB = −0.957 V
H 11.7 K b1.6x10 gb10 g
−8
400 x10 + −19 16
Also
or
′ = 6.43x10
C FB
−8
F / cm
2
′ ( max) = 1.6 x10
QSD b −19
gb10 gb0.30x10 g
16 −4
or
Also ′ ( max) = 4.8 x10 C / cm
QSD
−8 2
∈ox Now
′ =
Cmin
FG ∈ IJ ⋅ x FG t IJ + φ + 2φ
H∈ K
t ox + ′ ( max )
H∈ K
ox
dT VTN = QSD ox
ms fp
s ox
where
L 4 ∈ φ OP 1/ 2 b4.8x10 gb400x10 g − 0.957 + 2(0.347)
−8 −8
(3.9)b8.85x10 g
=
x =M
s fp −14
N eN Q
dT
a
or
Now VTN = +0.293 V
φ = (0.0259) lnG
F 10 IJ = 0.347 V 16
fp
H 15. x10 K 10
11.21
Then (a) At f = 1 Hz
x =M
L 4(11.7)b8.85x10 g(0.347) OP −14 1/ 2
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
N b1.6x10 gb10 g Q
dT −19 16
or
t ox 400 x10
−8
or
173
Cox = 8.63 x10

−8
F / cm
2 (c)
For the ideal oxide,
Also VFB = φ ms = 3.2 − (3.25 + 0.56 − 0.27 )
∈ox or
′ =
C FB
FG ∈ IJ F kT I FG ∈ IJ VFB = −0.34 V
t ox +
H t K H e K H eN K
ox s
We find
ox
(3.9)b8.85x10 g −14
a
QSD b
′ ( max ) = 1.6 x10 −19 5x1014 118
. x10
−4
gb gb g
=
F 3.9 I (0.0259)(11.7)b8.85x10 g −14
or
′ ( max ) = 0.944 x10 C / cm −8
H 11.7 K b1.6x10 gb5x10 g

2
400 x10
−8
+ QSD
−19 14
Then
or
′ ( max)
FG t IJ + φ − 2φ
VTP = − QSD
H∈ K
ox
′ = 3.42 x10
C FB
−8
F / cm
2 ms fn
ox
Now −b0.944 x10 gb 400 x10 g

−8 −8
∈ox − 0.34 − 2(0.27 )

(3.9)b8.85x10 g
=
′ =
Cmin
F ∈ IJ ⋅ x
−14
t +G
H∈ K
ox
ox dT or
s VTP = −0.989 V
We find
φ = (0.0259) lnG
F 5x10 IJ = 0.270 V 14
fn
H 15. x10 K 10
11.22
The amount of fixed oxide charge at x is
and ρ( x )∆x bC / cm g 2
x =M
L 4 ∈φ OP fn
1/ 2
By lever action, the effect of this oxide charge on
dT
N eN Q d
the flatband voltage is
1 FG x IJ ρ( x)∆x
=M
L 4(11.7)b8.85x10 g(0.270) OP −14 1/ 2
∆VFB = −
Cox ox Ht K
N b1.6x10 gb5x10 g Q −19 14
If we add the effect at each point, we must
integrate so that
or
z xρ ( x )
t ox
. µm
x dT = 118 1
∆VFB = − dx
Then Cox t ox
′ =
b
(3.9) 8.85x10 g −14
0
Cmin
F 3.9 I b118. x10 g 11.23
H 11.7 K
−8 −4
400 x10 +
QSS′
(a) We have ρ( x ) =
or ∆t
′ = 0.797 x10
Cmin
−8
F / cm
2
Then
z xρ ( x )
t ox
Also 1
∆VFB = − dx
C ′(inv ) = Cox = 8.63 x10
−8 2
F / cm Cox 0
t ox
zb g FGH
IJ F Q′ I dx
t ox
(b) At f = 1 MHz 1 t ox
t K H ∆t K
−8
≈− SS
Cox = 8.63 x10

2
F / cm C ox t ox − ∆t ox
1 F Q′ I
t − a t − ∆t f = −
′ = 3.42 x10
C FB
−8
F / cm
2
Q′
C H ∆t K
=− SS
ox ox
SS
′ = 0.797 x10
Cmin
−8
F / cm
2
ox
C ox
or
and
C ′(inv ) = Cmin
′ = 0.797 x10 −8 F / cm 2 F t IJ
∆V = − Q ′ G
H∈ K
ox
FB SS
ox
174
b
− 1.6 x10 gb5x10 gb750x10 g
−19 11 −8
11.24
(3.9)b8.85x10 g
= −14
Sketch
or
∆VFB = −1.74 V
11.25
Sketch
(b)
We have ρ( x ) =
QSS′ b1.6x10 gb5x10 g −19 11
11.26
t ox
=
750 x10
−8
FG N N IJ
(b) VFB = −Vbi = −Vt ln
H n K
a d
−2 2
= 1.067 x10 = ρ O i
Now L b10 gb10 g OP

= −(0.0259 ) ln M
16 16
z z
t ox t ox
xρ ( x ) ρO
∆VFB = −
Cox
1
0
t ox
dx = −
Cox t ox 0
xdx MN b15. x10 g PQ 10 2
or
or
VFB = −0.695 V
ρ O t ox
2
∆VFB = − (c)
2 ∈ox Apply VG = −3 V , VOX ≈ 3 V
b
− 1.067 x10 gb750 x10 g −2 −8 2
2(3.9 )b8.85 x10 g

= −14 For VG = +3 V ,
or dΕ ρ
=−
∆VFB − 0.869 V dx ∈s
(c) n-side: ρ = eN d
ρ( x ) = ρ O
FG x IJ dΕ eN d eN d x
Ht K
ox dx
=−
∈s
⇒E=−
∈s
+ C1
We find eN d xn
1
t ox ρ O = QSS′ ⇒ ρ O =
b
2 1.6 x10
−19
gb 5 x10
11
g Ε = 0 at x = − x n , then C1 = −
∈s
, so
−8
2
or ρ O = 2.13x10
−2
750 x10
Ε=−
eN d
∈s
a x + x f for − x ≤ x ≤ 0
n n
Now
1
z
t ox
1 F xI
⋅ x ⋅ ρ G J dx
Note that at x = 0 , Ε = −
eN d xn
∆VFB = −
Cox 0 t ox Ht K O
ox In the oxide, ρ = 0 , so
∈s
fz
t ox
1 ρO dΕ
=− ⋅
at
2
2
x dx = 0 ⇒ Ε = constant. From the boundary
Cox ox 0 dx
which becomes conditions. In the oxide:
1 ρO x
3 t ox
ρ O t ox
2 eN x
Ε=− d n
∆VFB = −
FG ∈ IJ ⋅ at f ⋅ 3 = − 3 ∈ 2 ∈s
Ht K
ox 0 ox
ox
In the p-region,
ρ
ox
dΕ eN eN a x
Then =− =+ a ⇒Ε= + C2
−b 2.13 x10 gb750 x10 g
−2 −8 2 dx ∈s ∈s ∈s
∆VFB =
3(3.9 )b8.85 x10 g
−14 b
Ε = 0 at x = t ox + x p , theng
or ∆VFB = −116
. V
175
C2 = −
eN a
∈s
bt ox g
+ x p , then
If we apply a voltage VG , then replace Vbi by
Vbi + VG , so
eN a
bt + x g− x t ox Ft I 2
a
∈s Vbi + VG f
Ε=−
∈s
ox p xn = x p = −
2
+
H 2K ox
+
eN d
eN a x p eN d x n We then find
At x = t ox , Ε = − =− −8
∈s ∈s 500 x10
xn = x p = −
So that N a x p = N d x n . 2
Since N a = N d ⇒ xn = x p FG 500x10 IJ −8 2
b
(11.7) 8.85x10 −14 (3.695) g
Now, the potential is
+
H 2 K +
b1.6x10 gb10 g
z
−19 16
φ = − Εdx which yields

For zero bias, we can write x n = x p = 4.646 x10 cm
−5
Vn + Vox + Vp = Vbi Now

where Vn , Vox , Vp are the voltage drops across eN d xn t ox
Vox =
the n-region, the oxide, and the p-region, ∈s
respectively. For the oxide:
eN d x n t ox b1.6x10 gb10 gb4.646x10 gb500 x10 g
−19 16 −5 −8
(11.7)b8.85x10 g
Vox = Ε ⋅ t ox = = −14
∈s
For the n-region: or
eN d FG x + x ⋅ xIJ + C ′
2 Vox = 0.359 V
Vn =
∈s H2 K n We can also find
eN d x n
2
Arbitrarily, set Vn = 0 , at x = − x n , then Vn =

2
2 ∈s
eN d x n
C′ =
2 ∈s
so then
b1.6x10 gb10 gb4.646x10 g
−19 16 −5 2
2(11.7 )b8.85 x10 g

= −14
Vn ( x ) =
eN d
2 ∈s
ax + x f n
2
or, the voltage drop across each of the

semiconductor regionsis
2
eN d x n Vn = Vp = 1.67 V
At x = 0 , Vn = which is the voltage drop
2 ∈s
across the n-region. Because of symmetry, 11.27
Vn = Vp . Then for zero bias, we have (a) n-type
(b) We have
2Vn + Vox = Vbi −12
which can be written as 200 x10 −7
Cox = = 1x10
2
−3
F / cm
eN d xn
2
eN d xn t ox 2 x10
+ = Vbi Also
or
∈s ∈s
Cox =
∈ox
⇒ t ox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−7
Vbi ∈s t ox Cox 10
x n + xn t ox − =0
2
or
eN d −6 °
t ox = 3.45 x10 cm = 345 A
Solving for x n , we find
(c)
t ox F I t ox
2
∈s Vbi QSS′
xn = −
2
+
H 2K +
eN d
VFB = φ ms −
Cox
176
or VDS = VDS ( sat ) = VGS − VT

QSS′ which then makes Qn′ equal to zero at the drain
−0.80 = −0.50 − −7
10 terminal.
or
QSS′ = 3x10 C / cm = 1.875 x10 cm
−8 2 11 −2
11.30
(d)
∈ox
I D ( sat ) =
Wµ n Cox
2L
aV GS
− VT f 2
′ =
C FB
FG ∈ IJ F kT I FG ∈ IJ where
b30x10 g(450)(3.9)b8.85x10 g
t ox +
H ∈ K H e K H eN K
ox s −4 −14
Wµ n Cox
2b2 x10 gb350 x10 g
s a
= −4 −8
(3.9)b8.85x10 g −14
2L
= = 0.333 x10
−3
A / V = 0.333 mA / V
2 2
F 3.9 I (0.0259)LM (11.7)b8.85x10 g OP −14
We have VDS ( sat ) = VGS − VT , then

H 11.7 K
−6
N b1.6x10 gb2 x10 g Q

3.45 x10 + −19 16
(a)
or VGS VDS ( sat ) I D ( sat ) (mA)
′ = 7.82 x10
C FB
−8
F / cm
2
1 0.2 0.0133
2 1.2 0.48
and
3 2.2 1.61
C FB = 156 pF 4 3.2 3.41
5 4.2 5.87
11.28
(a) Point 1: Inversion (b)
2:
3:
Threshold
Depletion
I D ( sat ) = a
0.333 VGS − VT (mA) f 1/ 2
then
4: Flat-band
VGS I D ( sat ) (mA)
1/ 2
5: Accumulation
1 0.115
11.29 2 0.693
We have 3 1.27
a
Qn′ = − Cox VGS − Vx − φ ms + 2φ fp fb g 4 1.85
a ′ ( max)
− QSS′ + QSD f 5 2.42
Now let Vx = VDS , so
ma f
Qn′ = − Cox VGS − VDS
11.31
We have
+M
L Q′ (max) + Q′ − bφ
SD SS
+ 2φ fp gOPQUVW Wµ p Cox b15x10 g(300)(3.9)b8.85x10 g
−4 −14
N C ox
ms
2L
=
2b1.5 x10 gb350 x10 g
−4 −8
′ ( max ) is really a
For a p-type substrate, QSD = 0.148 mA / V
2
negative value, so we can write We can write

ma f
Qn′ = − Cox VGS − VDS
I D ( sat ) =
Wµ p Cox
a
VSG + VT f 2
−M
L Q′ (max) − Q′ + φ
SD SS
+ 2φ fp
OPUV 2L
N C ox
ms
QW and
VSD ( sat ) = VSG + VT
Using the definition of threshold voltage VT , we
have
a
Qn′ = − Cox VGS − VDS − VT f
At saturation,
177
Then Since VDS > VDS ( sat ) , the transistor is always

VSG VSD ( sat ) I D ( sat ) (mA) biased in the saturation region. Then
1
2
0.2
1.2
0.00592
0.213
a
I D = Kn VGS − VT f 2
where, from Problem 11.30,

3 2.2 0.716
K n = 0.333 mA / V .
2
4 3.2 1.52
5 4.2 2.61 Then
VDS = VGS I D (mA)
0 0
11.32 1 0.0133
(a) I D ( sat ) =
Wµ n Cox
2L
aV GS
− VT f 2 2
3
0.48
1.61
4 3.41
Wµ n Cox
From Problem 11.30, = 0.333 mA / V
2
5 5.87
2L
We have
VDS ( sat ) = VGS − VT 11.36
Then
VGS VDS ( sat ) I D ( sat ) (mA)
a f
I D = 0.148 2 VSG + VT VSD − VSD (mA)
2
where VT = −0.8 V .
-2 0 0 Now
-1 1 0.333
0
+1
2
3
1.33
3.0
gd =
∂I D
∂VSD VDS =0
= 0.148 2 VSG + VT mS a f
+2 4 5.33 Then
+3 5 8.33
VSG g d ( mS )
(b) 1 0.0592
We have 2 0.355
I D ( sat ) = a
0.333 VGS − VT (mA) f 1/ 2 3
4
0.651
0.947
Now 5 1.24
VGS I D ( sat ) (mA)
1/ 2
-2 0 11.37
-1 0.577
We find that VT ≈ 0.2 V
0 1.15
+1 1.73 Now
+2 2.31
+3 2.89 I D ( sat ) =
Wµ n Cox
2L
aV GS
− VT f
where
11.33
Sketch Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
t ox 425 x10
11.34 or
−8
Cox = 8.12 x10
2
Plots F / cm
We are given W L = 10 .
11.35
We have From the graph, for VGS = 3 V ,
VDS ( sat ) = VGS − VT = VDS − VT I D ( sat ) ≈ 0.033 , then
so that
VDS = VDS ( sat ) + VT
178
Wµ n Cox W
0.033 = (3 − 0.2) = 14.7
2L L
or (b)
Wµ n Cox
2L
= 0.139 x10 =
−3 1
2
(10)µ n 8.12 x10 −8b g I D ( sat ) =
Wµ p Cox
2L
aV SG
+ VT f 2
which yields We have

−3
µ n = 342 cm / V − s
2
6 x10
F W I F 300 I (3.9)b8.85x10 g (5 − 0.75) −14
H L K H 2 K b400 x10 g
2
=
11.38 −8
(a)
which yields
VDS ( sat ) = VGS − VT
W
or = 25.7
4 = VGS − 0.8 ⇒ VGS = 4.8 V L
(b)
a
I D ( sat ) = K n VGS − VT f = KV
2
n
2
DS
( sat )
11.40
From Problem 11.30, we have
so (a) In nonsaturation
2 x10 = K n (4 )
−4 2
a
I D = 0.333 2 VGS − VT VDS − VDS f 2
or Now
K n = 12.5 µA / V ∂I D
a f
2
g mL = = (0.333) 2VDS
(c) ∂VGS
VDS ( sat ) = VGS − VT = 2 − 0.8 = 1.2 V At VDS = 0.5 V , we find
so VDS > VDS ( sat ) g mL = 0.333 mS
b
I D ( sat ) = 1.25 x10
−5
g(2 − 0.8) 2
(b) In saturation
or
I D ( sat ) = 18 µA
I D = 0.333 VGS − VTa f 2
so that
(d)
VDS < VDS ( sat )
g mS =
∂I D
∂VGS
= 2(0.333) VGS − VT a f
a
I D = Kn 2 VGS − VT VDS − VDSf 2
For VT = 0.80 V and at VGS = 4 V ,
b
= 1.25 x10
−5
g 2(3 − 0.8)(1) − (1) 2 We obtain
g mS = 2.13 mS
or
I D = 42.5 µA
11.41
From Problem 11.31, we have
11.39 (a) In nonsaturation,
(a) We have
a f
I D = 0.148 2 VSG + VT VSD − VSD (mA)
2
I D ( sat ) =
Wµ n Cox
2L
aV GS
− VT f 2
Then
Now
−3
g mL =
∂I D
∂VSG
= (0.148) 2VSD a f
6 x10
F W I F 525I (3.9)b8.85x10 g (5 − 0.75) −14 For VSD = 0.5 V , we obtain
H L K H 2 K b400x10 g
2
= −8 g mL = 0.148 mS
(b) In saturation
which yields
I D = 0.148 VSG + VTa f 2
so that
179
g mS =
∂I D
∂VSG
= 2(0.148) VSG + VT a f ∆VT =
2 e ∈s N a
2φ fp + VSB − 2φ fp
Cox
For VT = −0.8 V and at VSG = 4 V ,
We obtain =
b
2 1.6 x10
−19
g(11.7)b8.85x10 gb5x10 g −14 16 1/ 2
−8
g mS = 0.947 mS 8.63 x10
× 2(0.389 ) + VSB − 2(0.389 )
11.42 or
We can write, for VSB = 0 ,
∆VT = 1.49 0.778 + VSB − 0.882
′ ( max)
QSD
VTO = VFB + + 2φ fp We find that
Cox VSB ∆VT VT
We find
F 5x10 IJ = 0.389 V
= (0.0259 ) lnG
16
0
1
0
0.673
1.60
2.27
φ fp
H 15. x10 K 10 2
4
1.17
1.94
2.77
3.54
and
=M
L 4(11.7)b8.85x10 g(0.389) OP −14 1/ 2
N b1.6x10 gb5x10 g Q
x dT −19 16 11.43
For a p-channel MOSFET,
or
2 e ∈s N d
x dT = 0.142 µm ∆VT = − 2φ fn + VBS − 2φ fn
Then Cox
QSD b
′ ( max) = 1.6 x10 −19 5 x1016 0.142 x10 −4 gb gb g We find
FG 5x10 IJ = 0.329 V15
φ fn = (0.0259) ln
or
′ ( max ) = 114
QSD . x10 C / cm
−7 2 H 15. x10 K 10
Also and
∈ox b
(3.9) 8.85x10 −14
g ∈ox (3.9)b8.85x10 g −14
Cox = = Cox = = −8
t ox 400 x10
−8 t ox 600 x10
or or
−8
Cox = 5.75 x10
2
Cox = 8.63 x10
−8
F / cm
2 F / cm
Now Then
−7 ∆VT = −15. V
114
. x10
VTO = −0.5 +
8.63 x10
−8
+ 2( 0.389 )
=
b
− 2 1.6 x10
−19
g(11.7)b8.85x10 gb5x10 g −14 15 1/ 2
or 5.75 x10
−8
VTO = +1.60 V
× 0.658 + VBS − 0.811
Then
or
I D ( sat ) =
2L
aV − V f
Wµ n Cox
GS T
2
. = 0.708
15 0.658 + VBS − 0.811
F 10 I F 450 I b8.63x10 gaV f which yields

H 2 KH 2 K
−8 2
= GS
− VT VBS = 7.92 V
or
a
I D ( sat ) = 0.097 VGS − VT f (mA)
2
For I D ( sat ) = 1 mA , VGS − VT = 3.21 V

Now with substrate voltage applied,
180
11.44 or
(a)
0.357 = 0.211 0.576 + VSB − 0.759
+
n poly-to-p type ⇒ φ ms ≈ −1.0 V
which yields
F 10 IJ = 0.288 V
= (0.0259 ) lnG
15
VSB = 5.43 V
φ fp
H 15. x10 K 10
also 11.45
x dT =M
L 4 ∈φ OP fp
1/ 2 Computer plot
N eN Q a 11.46
=M
L 4(11.7)b8.85x10 g(0.288) OP −14 1/ 2 (a)
N b1.6x10 gb10 g Q −19 15 g ms =

Wµ n Cox
L
aV GS
− VT f
or
x dT = 0.863 µm =
(10)(400)(3.9) 8.85x10 −14 b g (5 − 0.65)
b gb10 gb0.863x10 g
−8
475 x10
′ ( max) = 1.6 x10
QSD
−19 15 −4
or
or g ms = 1.26 mS
′ ( max ) = 1.38 x10 −8 C / cm 2
QSD Now
also gm g′ 1
g m′ =
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g 1 + g m rs
⇒ m = 0.8 =
gm 1 + g m rs
t ox 400 x10
−8 which yields
1 1F 1 1 I F I
or
Cox = 8.63 x10 F / cm
−8 2
rs =
g m 0.8 H −1 =
1.26 0.8K−1
H K
Now or
b gb g
QSS′ = 1.6 x10
−19 10 −9
5x10 = 8 x10 C / cm
2
(b)
rs = 0.198 kΩ
Then
V =
T
a Q′ (max) − Q′ f + φ
SD SS
ms
+ 2φ fp
For VGS = 3 V ⇒ gms = 0.683 mS
Then
Cox
0.683
FG 1.38x10 − 8x10 IJ − 1.0 + 2(0.288)
−8 −9 g m′ =
1 + (0.683)( 0.198)
= 0.602 mS
=
H 8.63x10 K −8
So
or g m′ 0.602
VT = −0.357 V = = 0.88
g m 0.683
(b)
which is a 12% reduction.
For NMOS, apply VSB and VT shifts in a positive
direction, so for VT = 0 , we want 11.47
∆VT = +0.357 V . (a) The ideal cutoff frequency for no overlap
capacitance,
So
2e ∈ N a fT =
gm µ V −V
= n GS 2 T
a f
∆VT = 2φ fp + VSB − 2φ fp 2πC gs 2πL
Cox
(400)(4 − 0.75)
+0.357 =
b
2 1.6 x10
−19
g(11.7)b8.85x10 gb10 g −14 15 =
b
2π 2 x10
−4
g 2
−8
8.63 x10 or
× 2(0.288) + VSB − 2(0.288) f T = 517
. GHz
181
(b)
Now 11.48
gm (a) For the ideal case
fT =
g b
2π CgsT + C M vds 4 x10
6
where
fT =
2πL
=
2π 2 x10b −4
g
C = C a1 + g R f
M gdT m L
or
We find that f T = 3.18 GHz
C = C b0.75x10 gb20 x10 g (b)
−4 −4
gdT ox
With overlap capacitance (using the values from
(3.9)b8.85x10 gb0.75x10 gb20 x10 g−14 −4 −4
Problem 11.47),
=
500 x10
−8 gm
or
−14
fT =
b
2π CgsT + C M g
CgdT = 1.04 x10 F We find
Also g m = WCox vds
g ms =
Wµ n Cox
aV GS
− VT f =
b20x10 g(3.9)b8.85x10 gb4 x10 g
−4 −14 6
L 500 x10
−8
b20x10 g(400)(3.9)b8.85x10 g (4 − 0.75)

−4 −14
or
=
b2 x10 gb500 x10 g −4 −8
g m = 0.552 x10 S
We have
−3
or
g ms = 0.897 x10 S
−3 a
C M = CgdT 1 + g m R L f
Then b
= 1.04 x10
−14
g 1 + b0.552 x10 gb10x10 g −3 3
C M = 1.04 x10b −14

g 1 + b0.897 x10 gb10x10 g −3 3
or
−14
or C M = 6.78 x10 F
−13
C M = 1.04 x10 F Then
−3
Now 0.552 x10
b
CgsT = Cox L + 0.75x10
−4
g(W ) fT =
b
2π 3.8 x10
−14
+ 6.78 x10
−14
g
=
b
(3.9) 8.85x10 −14
g b2 x10 −4
+ 0.75x10
−4
gb20x10 g−4
or
f T = 0.83 GHz
−8
500 x10
or
−14
CgsT = 3.8 x10 F
We now find
gm
fT =
b
2π CgsT + C M g
−3
0.897 x10
=
b
2π 3.8 x10
−14
+ 1.04 x10
−13
g
or
f T = 1.0 MHz
182
Chapter 12
Problem Solutions 2∈ L 2(11.7)b8.85x10 g OP
=M
−14 1/ 2
12.1
(a)
eN a N b1.6x10 gb10 g Q −19 16
= 0.360 µm / V
LM V OP
1/ 2
I D = 10
−15
exp GS We have
N (2.1)V Q t VDS ( sat ) = VGS − VT
For V = 0.5 V , (a)
GS
I = 10 exp M
L 0.5 OP ⇒
−15
For VGS = 5 V ⇒ VDS ( sat ) = 4.25 V
Then
D
N (2.1)(0.0259) Q −12
∆L = 0.360 0.347 + 5 − 0.347 + 4.25
I D = 9.83x10 A
or
For VGS = 0.7 V , ∆L = 0.0606 µm
−10 If ∆L is 10%of L , then L = 0.606 µm
I D = 3.88 x10 A
(b)
For VGS = 0.9 V ,
For VDS = 5 V , VGS = 2 V ⇒ VDS ( sat ) = 1.25 V
−8
I D = 1.54 x10 A Then
Then the total current is: ∆L = 0.360 0.347 + 5 − 0.347 + 1.25
b g
I Total = I D 10
6
or
For VGS = 0.5 V , I Total = 9.83 µA ∆L = 0.377 µm
Now if ∆L is 10% of L, then L = 3.77 µm
For VGS = 0.7 V , I Total = 0.388 mA
For VGS = 0.9 V , I Total = 15.4 mA
12.3
(b)
2∈
Power: P = I Total ⋅ VDD ∆L = ⋅ φ fp + VDS ( sat ) + ∆VDS
Then eN a
For VGS = 0.5 V , P = 49.2 µW − φ fp + VDS ( sat )
For VGS = 0.7 V , P = 1.94 mW where
For VGS = 0.9 V , P = 77 mW FG N IJ = (0.0259) lnFG 4 x10 IJ 16
φ fp = Vt ln
Hn K H 1.5x10 K
a
10
i
12.2 or
We have φ fp = 0.383 V
2∈ and
∆L = ⋅ φ fp + VDS ( sat ) + ∆VDS
eN a L 4 ∈φ OP
=M
fp
1/ 2
− φ fp + VDS ( sat )
x dT
N eN Q a
where L 4(11.7)b8.85x10 g(0.383) OP

=M
−14
1/ 2
FG N IJ = (0.0259) lnFG 10 IJ 16
N b1.6x10 gb4 x10 g Q −19
Hn K H 1.5x10 K
16
φ fp = Vt ln a
10
i or
or x dT = 0.157 µm
φ fp = 0.347 V Then
We find QSD ′ ( max) = eN a x dT
185
b
= 1.6 x10
−19
gb4 x10 gb0.157 x10 g
16 −4 12.7
(a) Assume VDS ( sat ) = 1 V , We have
or
′ ( max ) = 10 C / cm −7 2 VDS ( sat )
QSD Ε sat =
Now L
fFGH ∈t IJK + φ + 2φ
We find
a
VT = QSD ox
ms fp
L( µm) Ε sat (V / cm)
ox
3
so that 3 3.33 x10
− b1.6 x10 gb3 x10 g b400 x10 g
4
10
−7 −19 10 −8 1 10
(3.9)b8.85x10 g
VT = −14 0.5 2 x10
4
4
0.25 4 x10
+0 + 2(0.383) 4
0.13 7.69 x10
or (b)
VT = 1.87 V
Assume µ n = 500 cm / V − s , we have
2
Now
v = µ n Ε sat
VDS ( sat ) = VGS − VT = 5 − 187
. = 3.13 V
Then
We find
For L = 3 µm , v = 1.67 x10 cm / s
LM 2(11.7)b8.85x10 g OP
6
−14 1/ 2
2∈
N b1.6x10 gb4 x10 g Q

= −19 16
For L = 1 µm , v = 5 x10 cm / s
6
eN a
For L ≤ 0.5 µm , v ≈ 10 cm / s
7
−5
= 180
. x10
Now
∆L = 180
. x10 ⋅
−5
0.383 + 3.13 + ∆VDS 12.8
We have I D′ = L( L − ∆L ) I D
−1
− 0.383 + 313
. We may write
or ∂I D′
= ( −1) L( L − ∆L ) I D
FG −∂(∆L)IJ
H ∂V K
−2
−5 gO =
∆L = 180
. x10 3.513 + ∆VDS − 3.513 ∂VDS DS
We obtain L ∂( ∆L )
= ⋅ ID ⋅
∆VDS ∆L( µm)
( L − ∆L ) 2 ∂VDS
We have
0 0
1 0.0451 2∈
2 0.0853 ∆L = ⋅ φ fp + VDS − φ fp + VDS ( sat )
eN a
3 0.122
4 0.156 We find
5 0.188 ∂( ∆L ) 2∈ 1
= ⋅
∂VDS eN a 2 φ fp + VDS
12.4 (a)
Computer plot For VGS = 2 V , ∆VDS = 1 V , and
VDS ( sat ) = VGS − VT = 2 − 0.8 = 1.2 V
12.5
Also
Plot
VDS = VDS ( sat ) + ∆VDS = 1.2 + 1 = 2.2 V
12.6 and
Plot
φ fp = (0.0259) ln
FG 3x10 IJ = 0.376 V
16
H 15. x10 K 10
Now
186
2∈ L 2(11.7)b8.85x10 g OP
=M
−14
1/ 2 (b)
F Ε IJ −1/ 3
eN a N b1.6x10 gb3x10 g Q
−19 16
Let µ eff =µ G
HΕ K O
eff
C
= 0.2077 µm / V
1/ 2
Where µ O = 1000 cm / V − s and

2
We find
Ε C = 2.5 x10 V / cm .
4
∆L = 0.2077 0.376 + 2.2 − 0.376 + 1.2
= 0.0726 µm VGS
Let Ε eff =
Then t ox
∂( ∆L ) 0.2077 1 We find
∂VDS
=
2
⋅
0.376 + 2.2
Cox =
∈ox
⇒ t ox =
∈ox
=
b
(3.9) 8.85x10 −14 g
= 0.0647 µm / V t ox Cox 6.9 x10
−8
From the previous problem, or

I D = 0.48 mA , L = 2 µm t ox = 500 A
°
Then Then
gO =
2
(2 − 0.0726) 2
b
0.48 x10 (0.0647 )
−3
g VGS Ε eff µ eff I D ( sat )
or 1 -- -- 0
−5
g O = 1.67 x10 S 2 4E5 397 0.370
so that 3 6E5 347 0.692
4 8E5 315 0.989
1
rO = = 59.8 kΩ 5 10E5 292 1.27
gO (c)
The slope of the variable mobility curve is not
(b)
constant, but is continually decreasing.
If L = 1 µm , then from the previous problem,
we would have I D = 0.96 mA , so that 12.10
gO =
1
(1 − 0.0726)2
b0.96x10 g(0.0647) −3
Plot
12.11
or
′ ( max)
QSD
g O = 7.22 x10 S
−5
VT = VFB + + 2φ fp
Cox
so that
We find
rO =
1
= 13.8 kΩ FG N IJ = (0.0259) lnFG 5x10 IJ 16
φ fp = Vt ln
Hn K H 1.5x10 K
a
gO 10
i
or
12.9
φ fp = 0.389 V
(a)
I D ( sat ) =
Wµ n Cox
aV GS
− VT f 2
and
L 4 ∈φ OP 1/ 2
=M
2L fp
F I (500)b6.9 x10 gaV − 1f

10
x dT
N eN Q
H 2K
−8 2
= a
or
GS
L 4(11.7)b8.85x10 g(0.389) OP
=M
−14 1/ 2
I ( sat ) = 0.173aV − 1f (mA)

D GS
2
N b1.6x10 gb5x10 g Q −19 16
and or
I ( sat ) = 0.173 aV − 1f (mA)

1/ 2 x dT = 0.142 µm
D GS
Now
187
′ ( max) = eN a x dT
QSD 12.13
b
= 1.6 x10
−19
gb5x10 gb0.142 x10 g
16 −4
(a) Non-saturation region
1 W F I a f
I D = µ n Cox
H K
2 VGS − VT VDS − VDS
2
or
2 L
′ ( max ) = 114
QSD . x10 C / cm
−7 2
We have
Also ∈ C
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g = 8.63x10 −8
F / cm
2
Cox = ox ⇒ ox
t ox k
−8
t ox 400 x10 and
Then W ⇒ kW , L ⇒ kL
114
. x10
−7 also
VT = −112
. + −8
+ 2(0.389 ) VGS ⇒ kVGS , VDS ⇒ kVDS
8.63x10
So
or
1 F IF I a
C kW
f a f
VT = +0.90 V
H KH K
2
I D = µ n ox 2 kVGS − VT kVDS − kVDS
2 k kL
(a)
Then
ID =
Wµ n Cox
2L
a f
2 VGS − VT VDS − VDS
2
I D ⇒ ≈ kI D
In the saturation region
and
VDS ( sat ) = VGS − VT 1 C F I F I kV
kW
H KH K
2
I D = µ n ox GS
− VT
We have 2 k kL
F IF I b
20 1
g Then
ID =
2H KH K
2
(400) 8.63x10 −8 I D ⇒ ≈ kI D
a
× 2 VGS − VT VDS − VDS f 2 (b)
a fa f
P = I DVDD ⇒ kI D kVDD ⇒ k P
2
or
a f
I D = 0.173 2 VGS − VT VDS − VDS (mA)
2
12.14
For VDS = VDS ( sat ) = VGS − VT = 1 V , a f
I D ( sat ) = WCox VGS − VT v sat
I D ( sat ) = 0.173 mA
F C I akV − V fv
For VDS = VDS ( sat ) = VGS − VT = 2 V ,
⇒ ( kW )
HkK ox
GS T sat
I D ( sat ) = 0.692 mA or
(b) I D ( sat ) ≈ kI D ( sat )
For VDS ≤ 1.25 V , µ = µ n = 400 cm / V − s .
2
The curve for VGS − VT = 1 V is unchanged. For 12.15

(a)
VGS − VT = 2 V and 0 ≤ VDS ≤ 1.25 V , the curve
in unchanged. For VDS ≥ 1.25 V , the current is
a f
(i) I D = Kn VGS − VT = (0.1)(5 − 0.8)
2 2
or
constant at I D = 1.764 mA
I D = 0.173 2( 2 )(1.25) − (1.25)
2
= 0.595 mA (ii)
When velocity saturation occurs, F 0.1I (0.6)(5) − 0.8
H 0.6K
2
VDS ( sat ) = 1.25 V for the case of ID =
VGS − VT = 2 V . or
I D = 0.807 mA
12.12 (b)
Plot (i) P = (1.764 )(5) ⇒ P = 8.82 mW
(ii) P = (0.807 )(0.6)(5) ⇒ P = 2.42 mW
188
(c)
0.807 x dT
L 4 ∈φ OP
=M
fp
1/ 2
Current: Ratio =
1.764
= 0.457 N eN Q a
2.42
=M
L 4(11.7)b8.85x10 g(0.376) OP −14 1/ 2
Power: Ratio = = 0.274 −19 16
8.82
or
12.16 x dT = 0.180 µm
eN a xdT RS r LM 2 xdT OPUV Also
∆VT = −
Cox TL N
j
1+
rj
−1
QW Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
Now t ox 800 x10
FG N IJ = (0.0259) lnFG 10 IJ 16 or
φ fp = Vt ln
Hn K H 1.5x10 K
a
−8
Cox = 4.31x10
2
10 F / cm
i
Then
or
φ fp = 0.347 V ∆VT = −0.20 = −
b1.6x10 gb3x10 gb0.18x10 g
19 16 −4
−8
and 4.31x10
LM 4 ∈φ OP 1/ 2
R 0.6 LM 1 + 2(0.18) − 1OPUV
×S
T L N 0.6 QW
fp
x dT =
N eN Q a
=M
L 4(11.7)b8.85x10 g(0.347) OP −14 1/ 2 or
0.319
N b1.6x10 gb10 g Q −19 16 = −0.20 = −
which yields
L
or
x dT = 0.30 µm L = 1.59 µm
Also
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g 12.18
We have
−8
t ox 450 x10 L ′ = L − (a + b )
−8
= 7.67 x10
2
F / cm and from the geometry
Then (1) b a + r g + x = br + x g 2 2 2
∆VT = −
b1.6x10 gb10 gb0.3x10 g−19 16 −4
and
j dT j dS
(2) bb + r g + x = br + x g
−8 2 2
7.67 x10 2
R 0.3 LM 1 + 2(0.3) − 1OPUV

×S
From (1),
j dT j dD
or
T 1 N 0.3 QW b a + r g = br + x g − x
j
2
j dS
2 2
dT
so that
∆VT = −0.137 V
a= br + x g − x − r j dS
2 2
dT j
12.17 which can be written as

RS r LM 1 + 2 x − 1OPUV L F x I Fx I OP
a = r M G1 +
2 2
eN a xdT
MN H r JK − GH r JK
j
∆V = −
PQ
dT dS dT
−1
C
T
T L N r QW ox j
j
j j
Now
φ = (0.0259) lnG
F 3x10 IJ = 0.376 V 16
or
fp
H 15. x10 K 10
and
189
L F x IJ − FG x IJ − 1OP RSLM OP
a=rM
2 2
eN a x dT rj 2 x dS
+G
2 xdS ∆VT = − ⋅ 1+ +α −1
2
MN H r K H r K PQ 2 L TN Q
1+ dS dT
j
rj Cox rj
LM OPUV
j j
Define 2 xdD
+ 1+ + β −1
2
α =
2 xdS − xdT
2
2
2
N rj QW
rj Note that if xdS = xdD = xdT , then α = β = 0
We can then write and the expression for ∆VT reduces to that given
LM 1 + 2 x + α − 1OP
a = rj dS 2
in the text.
N r Q j
12.19
Similarly from (2), we will have We have L ′ = 0 , so Equation (12.25) becomes
L 2 x + β − 1OP
b = r M 1+ dD 2 L + L′ L 1 RS r LM j 2 xdT OPUV
⇒ = = 1− 1+ −1
N r
j
Q j 2L 2L 2 T LN rj QW
where or
β =
2 xdD − xdT
2 2
rjLM 1+
OP 1
2 xdT
−1 =
LN Q 2
2
rj r j
The average bulk charge in the trapezoid (per
Then Equation (12.26) is
unit area) is
F I F 1I
QB′ ⋅ L = eN a xdT
L + L′
2 H K
Q ′ = eN x
B
H 2Ka dT
The change in the threshold voltage is

or
Q ′ ( max)
L + L′ F I Q′
∆VT = B − SD
QB′ = eN a xdT
2L H K or
Cox Cox
We can write
L + L′ 1 L′ 1
= + = +
1
L − (a + b ) ∆VT =
a fa
1 2 eN a xdT
−
eN a xdT f a f
2L 2 2L 2 2L Cox Cox
which is or
(a + b ) 1 eN a xdTF Ia f
= 1−
2L
∆VT = −
2 CoxHK
Then
QB′ = eN a xdT 1 −
LM
(a + b ) OP 12.20
2L N Q Computer plot
Now QB′ replaces QSD ′ ( max ) in the threshold
equation. Then 12.21
Computer plot
Q′ Q ′ ( max)
∆VT = B − SD
Cox Cox 12.22
eN a x dT LM1 − (a + b) OP − eN x eN a xdT RS r LM 2 xdT OPUV
=
N 2L Q C
a dT j
∆VT = − 1+ −1
or
Cox ox Cox TL N rj QW
eN a xdT (a + b )
∆VT = − ⋅
Cox 2L
Then substituting, we obtain
190
F N I akx f R kr L OPUV
We find
FG 3x10 IJ = 0.376 V
e
HkK a
dT
ST kL MN 2 kxdT
φ fp = (0.0259) ln
16
FC I H 15. x10 K
j
⇒− 1+ −1
HkK ox krj QW and

10
or L 4 ∈φ OP
=M
fp
1/ 2
∆VT = k∆VT x dT
N eN Q a
12.23 L 4(11.7)b8.85x10 g(0.376) OP

=M
−14 1/ 2
F ξx I
eN a xdT
N b1.6x10 gb3x10 g Q −19 16
∆VT =
C HWK ox
dT
or
We find x dT = 0.180 µm
φ = (0.0259) lnG
F 10 IJ = 0.347 V 16
Also
fp
H 15. x10 K 10
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
and t ox 800 x10
x =M
L 4 ∈φ OP fp
1/ 2
or
dT
N eN Q a
Cox = 4.31x10 F / cm
Now, we can write
−8 2
=M
L 4(11.7)b8.85x10 g(0.347) OP −14 1/ 2
eN a xdT
2
N b1.6x10 gb10 g Q −19 16 W=

a f
Cox ∆VT
or
x dT = 0.30 µm b1.6x10 gb3x10 gb0.18x10 g
−19 16 −4 2
Also
=
b4.31x10 g(0.25) −8
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g or
W = 1.44 µm
−8
t ox 450 x10
or
−8
12.25
Cox = 7.67 x10
2
F / cm Computer plot
Then
b1.6x10 gb10 gb0.3x10 g −19 16 −4
12.26
∆V = T eN a xdT F ξx I
HWK
−8
7.67 x10 ∆VT = dT
L aπ 2fb0.3x10 g OP
×M
−4 Cox
N 2.5x10 Q −4 Assume that ξ is a constant

F N I akx f
or
∆VT = +0.118 V
e
H k K F ξ ⋅ kx I
a
dT
⇒
F C I H kW K
dT
12.24
HkK ox
Additional bulk charge due to the ends: or

1 2 F I a f ∆VT = k∆VT
∆QB = eN a L
2 H K
x dT ⋅ 2 = eN a LxdT ξ xdT
where ξ = 1 . 12.27
Then (a)
∆VT =
eN a x dT
2 b
VBD = 6 x10 t ox = 6 x10
6
g b 6
gb250x10 g −8
or
CoxW
191
VBD = 15 V LD = 4.09 x10 cm

−6
(b) Six Debye lengths:

With a safety factor of 3,
1
b
6 4.09 x10
−6
g = 0.246 µm
VBD = ⋅ 15 ⇒ VBD = 5 V From Example 12.4, we have x dO = 0.336 µm ,
3 which is the zero-biased source-substrate
junction width.
12.28 At near punch-through, we will have
We want VG = 20 V . With a safety factor of 3, x dO + 6 LD + xd = L
then VBD = 60 V , so that where x d is the reverse-biased drain-substrate
b g
60 = 6 x10 t ox ⇒ t ox = 1000 A
6 °
junction width. Now
0.336 + 0.246 + xd = 1.2 ⇒ xd = 0.618 µm at
12.29 near punch-through.
Snapback breakdown means αM = 1 , where We have
ID F I L 2 ∈aV + V f OP
=M
1/ 2
α = (0.18) log10
H K
bi DS
and
3 x10
−9
xd
N eN Q a
or
1 2
xd eN a
M =
VCE
m
FG IJ Vbi + VDS =
2∈
1−
VBD H K b0.618x10 g b1.6x10 gb10 g
−4 2 −19 16
2(11.7 )b8.85 x10 g

=
Let VBD = 15 V , m = 3 . Now when −14
α which yields
αM = 1 =
FV I 3
Vbi + VDS = 2.95 V
1−
H 15 K
CE
From Example 12.4, we have Vbi = 0.874 V , so

we can write this as that
FV I 3
VDS = 2.08 V
1−
H 15 KCE
= α ⇒ VCE = 15 3 1 − α
which is the near punch-through voltage. The
ideal punch-through voltage was
Now
VDS = 4.9 V
ID α VCE
E-8 0.0941 14.5
12.31
E-7
E-6
0.274
0.454
13.5
12.3 L b10 gb3x10 g OP = 0.902 V
V = ( 0.0259 ) ln M
19 16
E-5
E-4
0.634
0.814
10.7
8.6
bi
MN b1.5x10 g PQ 10 2
E-3 0.994 2.7 The zero-biased source-substrate junction width:
x =M
L 2 ∈V OP bi
1/ 2
12.30
dO
N eN Q a
One Debye length is
LM ∈akT ef OP 1/ 2
=M
L 2(11.7)b8.85x10 g(0.902) OP −14 1/ 2
LD =
N eN Q a
N b1.6x10 gb3x10 g Q −19 16
or
=M
L(11.7)b8.85x10 g(0.0259) OP −14 1/ 2
x dO = 0.197 µm
N b1.6x10 gb10 g Q −19 16 The Debye length is

or
192
LD
L ∈akT ef OP
=M
1/ 2
L = xdO + 6 LD + xd
N eN Q a or
= 0.354 + 0.142 + 0.584
L(11.7)b8.85x10 g(0.0259) OP
=M
−14 1/ 2 L = 1.08 µm
N b1.6x10 gb3x10 g Q −19 16
12.33
or
(a) φ fp = (0.0259 ) ln
FG 2 x10 IJ = 0.306 V
15
H 15. x10 K
−6
LD = 2.36 x10 cm 10
so that
b
6 LD = 6 2.36 x10
−6
g = 0.142 µm and
FG E + φ IJ = −F 112. + 0.306I
φ ms = −
H 2e K H2 K
g
Now fp
x dO + 6 LD + xd = L
or
We have for VDS = 5 V ,
φ ms = −0.866 V
xd =
LM a f OP
2 ∈ Vbi + VDS
1/ 2
Also
N eN Q a
x dT
L 4 ∈φ OP
=M
fp
1/ 2
=M
L 2(11.7)b8.85x10 g(0.902 + 5) OP −14 1/ 2
N eN Q a
N b1.6x10 gb3x10 g Q −19 16

L 4(11.7)b8.85x10 g(0.306) OP
=M
−14 1/ 2
or
x d = 0.505 µm
N b1.6x10 gb2 x10 g Q −19 15
or
Then x dT = 0.629 µm
L = 0.197 + 0.142 + 0.505
Now
or
L = 0.844 µm QSD ′ ( max) = eN a x dT
b
= 1.6 x10
−19
gb2 x10 gb0.629 x10 g
15 −4
12.32 or
With a source-to-substrate voltage of 2 volts, ′ ( max ) = 2.01x10 C / cm −8 2
QSD
x dO =
LM 2 ∈aV + V f OP 1/ 2
We have
b g gb
bi SB
N eN Q a
QSS′ = 2 x10 1.6 x10
11 −19 −8
= 3.2 x10 C / cm
2
L 2(11.7)b8.85x10 g(0.902 + 2) OP
=M
−14 1/ 2 Then
F t IJ + φ + 2φ
N b1.6x10 gb3x10 g Q V = a Q ′ ( max) − Q ′ fG
H∈ K
−19 16 ox
T SD SS ms fp
or ox
x dO = 0.354 µm b2.01x10 − 3.2 x10 gb650x10 g

−8 −8 −8
(3.9)b8.85x10 g
=
We have 6 LD = 0.142 µm from the previous −14
problem. −0.866 + 2(0.306)

Now
xd
L 2 ∈aV + V + V f OP
=M bi DS SB
1/ 2
which yields
VT = −0.478 V
N eN Q a (b) We need a shift in threshold voltage in the
L 2(11.7)b8.85x10 g(0.902 + 5 + 2) OP
=M
−14 1/ 2 positive direction, which means we must
add acceptor atoms. We need
N b1.6x10 gb3x10 g Q −19 16
∆VT = +0.80 − ( −0.478) = 1.28 V
Then
or
x d = 0.584 µm
Then
193
a∆V fC (1.28)(3.9) 8.85x10 −14 b g ∆VT = −0.50 − ( −3.74 ) = 3.24 V

DI = =
b1.6x10 gb650 x10 g
T ox
−19 −8 Now
or
e
a∆V fC (3.24)(3.9) 8.85x10 −14 b g
DI = =
b1.6x10 gb750 x10 g
T ox
−19 −8
DI = 4.25x10 cm
11 −2 e
or
−2
DI = 9.32 x10 cm
11
12.34
(a) φ fn = (0.0259 ) ln
FG 10 IJ = 0.347 V 16
H 15. x10 K 10 12.35

F 10 IJ = 0.288 V
(a) φ = (0.0259 ) lnG
15
and
F E − φ IJ
= φ′ − G χ′ +
fp
H 15. x10 K 10
φ ms
H 2e K
g
ms fn and
= 3.2 − (3.25 + 0.56 − 0.347 ) L 4 ∈φ OP

x =M
fp
1/ 2
or N eN Q
dT
a
φ ms = −0.263 V
Also L 4(11.7)b8.85x10 g(0.288) OP
=M
−14
1/ 2
L 4 ∈φ OP
=M
fn
1/ 2
N b1.6x10 gb10 g Q −19 15
x dT
N eN Q d
or
x dT = 0.863 µm
L 4(11.7)b8.85x10 g(0.347) OP
=M
−14 1/ 2
Now
N b1.6x10 gb10 g Q −19 16 QSD ′ ( max) = eN a x dT

b
= 1.6 x10
−19
gb10 gb0.863x10 g
15 −4
or
x dT = 0.30 µm or
Now ′ ( max ) = 1.38 x10 C / cm
QSD
−8 2
QSD ′ ( max) = eN d xdT Also

b
= 1.6 x10
−19
gb10 gb0.30x10 g
16 −4
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
or t ox 750 x10
−8
QSD′ ( max) = 4.8 x10 −8 C / cm 2 or

We have Cox = 4.6 x10
−8
F / cm
2
b
QSS′ = 5x10 1.6 x10
11
g
−19
gb −8
= 8 x10 C / cm
2
Then
Now ′ ( max)
QSD
F t IJ + φ − 2φ
V = −a Q ′ ( max) + Q ′ fG
VT = VFB + 2φ fp +
Cox
H∈ K
ox
T SD SS ms fn
−8
1.38 x10
= −1.50 + 2(0.288) +
ox
−b4.8 x10 + 8 x10 gb750 x10 g

−8 −8 −8 −8
4.6 x10
(3.9)b8.85x10 g
= −14 or
VT = −0.624 V
−0.263 − 2(0.347 )
(b)
which becomes
Want VT = +0.90 V , which is a positive shift and
VT = −3.74 V
we must add acceptor atoms.
(b) ∆VT = 0.90 − ( −0.624 ) = 152
. V
We want VT = −0.50 V . Need to shift VT in the Then
positive direction which means we need to add
acceptor atoms. D =
I
a∆V fC T ox
=
b
(1.52) 4.6 x10 −8 g
−19
So e 1.6 x10
194
or
DI = 4.37 x10 cm
11 −2 11.37
(c) F 10 IJ = 0.407 V
(a) φ = (0.0259 ) lnG
17
With an applied substrate voltage,

fn
H 15. x10 K 10
2e ∈ N a and
∆VT =
Cox
2φ fp + VSB − 2φ fp
L 4(11.7)b8.85x10 g(0.407) OP
x =M
−14 1/ 2
=
b
2 1.6 x10
−19
g(11.7)b8.85x10 gb10 g −14 15 1/ 2
N b1.6x10 gb10 g Q
dT −19 17
−8 or
4.6 x10 −5
x dT = 1.026 x10 cm
× 2(0.288) + 2 − 2(0.288)
+
n poly on n ⇒ φ ms = −0.32 V
or
We have
∆VT = +0.335 V
Then the threshold voltage is
b
′ ( max) = 1.6 x10 −19 1017 1.026 x10 −5
QSD gb gb g
VT = +0.90 + 0.335 or
or ′ ( max ) = 1.64 x10 C / cm
QSD
−7 2
VT = 1.24 V Now
VTP = −1.64 x10 − 1.6 x10
−7
b −19
gb5x10 g10
12.36 b80x10 g − 0.32 − 2(0.407)

−8
(3.9)b8.85x10 g
The total space charge width is greater than x I , × −14
so from chapter 11,

or
2e ∈ N a
∆VT = 2φ fp + VSB − 2φ fp VTP = −153
. V , Enhancement PMOS
Cox
Now (b)
F 10 IJ = 0.228 V
= (0.0259 ) lnG
14
For VT = 0 , shift threshold voltage in positive
φ fp
H 15. x10 K 10 direction, so implant acceptor ions
eDI ∆VT Cox a f
and ∆VT = ⇒ DI =
∈ (3.9)b8.85x10 g −14
Cox e
Cox = =
ox
−8 so
or
t ox 500 x10
(153 b g
. )(3.9 ) 8.85 x10
−14
Cox = 6.90 x10

−8
F / cm
2
DI =
b80x10 gb1.6x10 g
−8 −19
Then or
∆VT =
b
2 1.6 x10
−19
g(11.7)b8.85x10 gb10 g −14 14 1/ 2
DI = 4.13 x10 cm
12 −2
−8
6.90 x10
12.38
× 2(0.228) + VSB − 2(0.228) Shift in negative direction means implanting
or donor ions. We have
∆VT = 0.0834 0.456 + VSB − 0.456 eDI
∆VT =
Then Cox
VSB (V ) ∆VT (V ) where
1 0.0443 Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
3 0.0987 t ox 400 x10
−8
5 0.399
or
−8
Cox = 8.63 x10
2
F / cm
195
Now 12.41
DI =
Cox ∆VTa f = b8.63x10 g(1.4) −8
−19
We have the areal density of generated holes as
a f
= ( g )(γ ) t ox where g is the generation rate
e 1.6 x10
and γ is the dose. The equivalent charge
or
DI = 7.55 x10 cm
11 −2 trapped is = xgγ t ox .
Then
12.39
The areal density of generated holes is
Q′
∆VT = − SS = −
Cox a
exgγ t ox
f
∈ox t ox
a f
= − exgγ t ox
2
b
= 8 x10 gb10 gb750 x10 g = 6x10 cm
12 5 −8 12 −2
so that
∆V ∝− at f
2
The equivalent surface charge trapped is
= ( 0.10)b6 x10 g = 6 x10 cm
T ox
12 11 −2
Then
Q′ b6x10 gb1.6x10 g b750x10 g 11 −19
−8
(3.9)b8.85x10 g
∆V = −
T
=− SS
−14
C ox
or
∆VT = −2.09 V
12.40
The areal density of generated holes is
12 −2
6 x10 cm . Now
Cox =
∈ox
=
b
(3.9) 8.85x10 −14 g
−8
t ox 750 x10
or
−8
Cox = 4.6 x10
2
F / cm
Then
∆VT = −
QSS′
=−
b6x10 g( x)b1.6x10 g12 −19
−8
Cox 4.6 x10
For ∆VT = −0.50 V
Where the parameter x is the maximum fraction
of holes that can be trapped. Then we find
x = 0.024 ⇒ 2.4%
196
Chapter 13
Problem Solutions (iii) For VGS = 1 V , VDS = −5 V
a − h = −0.045 µm
13.1 which implies no undepleted region.
Sketch
13.4
13.2 p-channel JFET – GaAs
Sketch (a)
13.3
2
2a N a b
2 0.5 x10 g b3x10 g
−4 2 16
. )b8.85 x10 g
VPO = =
p-channel JFET – Silicon 2(131
−14
2∈
(a)
2
ea N a b1.6x10 gb0.5x10 g b3x10 g
−19 −4 2 16
or
VPO = 5.18 V
2(11.7 )b8.85 x10 g
VPO = = −14
2∈ Now
or
Vbi = ( 0.0259 ) ln
LM b5x10 gb3x10 g OP
18 16
VPO = 5.79 V
Now
MN b1.8x10 g PQ 6 2
Vbi
L b5x10 gb3x10 g OP
= ( 0.0259 ) ln M
18 16
or
Vbi = 1.35 V
MN b1.5x10 g PQ 10 2
so
VP = VPO − Vbi = 5.18 − 1.35
or
Vbi = 0.884 V or
so VP = 3.83 V
VP = VPO − Vbi = 5.79 − 0.884 (b)
or L 2 ∈aV − V
a−h = a−M bi DS
+ VGS f OP 1/ 2
(b)
VP = 4.91 V
N eN a Q
For VGS = 1 V , VDS = 0
L 2 ∈aV − V
a−h = a−M bi DS
+ VGS f OP 1/ 2
(i)
Then
N eN a Q a − h = 0.5 x10
−4
(i)
For VGS = 1 V , VDS = 0
L 2(131. )b8.85x10 ga1.35 + 1 − V f OP
−M
−14
DS
1/ 2
Then N b1.6x10 gb3x10 g Q −19 16
a − h = 0.5 x10
−4 or
L 2(11.7)b8.85x10 ga0.884 + 1 − V f OP
−M
−14
DS
1/ 2 a − h = 0.5 x10
−4
b ga2.35 − V f 1/ 2
−10
−19 16 − 4.83 x10 DS
which yields
or a − h = 0.163 µm
−4
a − h = 0.5 x10
b
− 4.31x10
−10
ga1.884 − V f DS
1/ 2 (ii) For VGS = 1 V , VDS = −2.5 V
a − h = 0.016 µm
or
(iii) For VGS = 1 V , VDS = −5 V
a − h = 0.215 µm
a − h = −0.096 µm
(ii) For VGS = 1 V , VDS = −2.5 V
which implies no undepleted region.
a − h = 0.0653 µm
199
13.5 −4
0.2 x10 = 0.5 x10
−4
(a) VPO =
ea N d
2
−M
L 2(131. )b8.85x10 gaV − V f OP −14
bi GS
1/ 2
2∈
b1.6x10 gb0.5x10 g b8x10 g
−19 −4 2 16 N b1.6x10 gb8x10 g Q −19 16

2(11.7 )b8.85 x10 g
=
. x10 aV − V f
−14
−10 −10
9 x10 = 1811 bi GS
or or
VPO = 15.5 V Vbi − VGS = 4.97 V
(b) Now
L 2 ∈aV − V f OP
a−h = a−M bi GS
1/ 2
Vbi
L b3x10 gb8x10 g OP
= ( 0.0259 ) ln M
18 16
N eN Q d MN b1.8x10 g PQ 6 2
so or
−4 −4
0.2 x10 = 0.5 x10 Vbi = 1.36 V
LM 2(11.7)b8.85x10 gaV − V f OP −14
bi GS
1/ 2
Then
− −19 16
VGS = Vbi − 4.97 = 1.36 − 4.97
or
or VGS = −3.61 V
= 1.618 x10 aV − V f
−10 −10
9 x10 bi GS
which yields 13.7

Vbi − VGS = 5.56 V 2
ea N a
Now (a) VPO =
L b3x10 gb8x10 g OP
= ( 0.0259 ) ln M
18 16 2∈
Vbi
MN b15. x10 g PQ 2 b1.6x10 gb0.3x10 g b3x10 g
−19 −4 2 16
. )b8.85 x10 g
10
=
2(131
−14
or
or
Vbi = 0.896 V
VPO = 1.863 V
Then
VGS = 0.897 − 5.56 ⇒ VGS = −4.66 V
Vbi = ( 0.0259 ) ln
18 16
13.6
MN b1.8x10 g PQ 6 2
For GaAs: or
(a) Vbi = 1.352 V
ea N d
2 Then
VPO = VP = VPO − Vbi = 1.863 − 1.352
2∈
b1.6x10 gb0.5x10 g b8x10 g
−19 −4 2 16
or
VP = 0.511 V
. )b8.85 x10 g
=
2(131
−14
(b) (i)
or
a−h = a−M
L 2 ∈aV + V f OP bi GS
1/ 2
(b)
VPO = 13.8 V
N eN Q a
or
a−h = a−M bi GS
1/ 2
a − h = b0.3x10 g
−4
N eN Q d
L 2(131. )b8.85x10 g(1.352) OP −14 1/ 2
−M
N b1.6x10 gb3x10 g Q −19 16
200
which yields
a − h = 4.45 x10 cm
−6
(iii) For VGS = −1 V , VDS = 2 V ,
(ii) a − h = −0.0051 µm
b
a − h = 0.3x10
−4
g which implies no undepleted region
L 2(131. )b8.85x10 g(1.351 + 1) OP

−M
−14 1/ 2
13.9
N b1.6x10 gb3x10 g Q −19 16 F b5x10 gb4 x10 gI

= (0.0259 ) lnG
18 16
H b18. x10 g JK
Vbi 2
which yields 6
−6
a − h = −3.7 x10 cm or
which implies no undepleted region. Vbi = 1.359 V
13.8 L 2 ∈aV + V
a−h = a−M bi DS
− VGS f OP 1/ 2
(a) n-channel JFET – Silicon N eN Q

b1.6x10 gb0.35x10 g b4 x10 g
D
2
2
ea N d
−19 −4 16
or
2(11.7 )b8.85 x10 g

VPO = = −14 a − h = 0.35 x10
−4
2∈
or L 2(131. )b8.85x10 ga1.359 + V
−M
−14
DS
− VGS f OP 1/ 2
VPO = 3.79 V
N b1.6x10 gb4 x10 g −19 16
Q
Now −4
We want a − h = 0.05 x10 cm ,
Vbi
Lb5x10 gb4 x10 g OP
= (0.0259 ) ln M
18 16
Then
MN b15. x10 g PQ 10 2 −4
0.05 x10 = 0.35 x10
−4
or b
− 3.623 x10
−10
ga1.359 + V DS
− VGS f 1/ 2
Vbi = 0.892 V (a)

so that For VDS = 0 , we find
VP = Vbi − VPO = 0.892 − 3.79 VGS = −1125
. V
or
(b)
VP = −2.90 V
For VDS = 1 V , we find
(b)
VGS = −0.125 V
a−h = a−
LM a2 ∈ Vbi + VDS − VGS f OP 1/ 2
N eN d Q 13.10
(a)
We have
−4 I =
a f
µ n eN d Wa
2 3
a − h = 0.35 x10 P1
6∈L
−
LM 2b117. gc8.85x10 hb0.892 + V −14
DS − VGS g OP 1/ 2
(1000) b1.6 x10 gb10 g −19 16 2
MN c16. x10 hc4 x10 h −19 16

PQ =
6(11.7 )b8.85 x10 g
−14
or
b400x10 gb0.5x10 g −4 −4 3
×
b20x10 g
−4
a − h = 0.35 x10
ga0.892 + V f
−4
b
− 3.24 x10
−10
DS
− VGS
1/ 2
or
(i) For VGS = 0 , VDS = 1 V , I P1 = 1.03 mA
a − h = 0.102 µm (b)
(ii) For VGS = −1 V , VDS = 1 V , 2
ea N d
a − h = 0.044 µm VPO =
2∈
201
Lb1.6x10 gb0.5x10 g b10 g OP

=M
−19 −4 2 16 (ii) For VGS = −0.265 V ⇒
MN 2(11.7)b8.85x10 g PQ −14
(iii)
I D1 ( sat ) = 0.140 mA
For VGS = −0.53 V ⇒
or
VPO = 1.93 V I D1 ( sat ) = 0.061 mA
Also (iv) For VGS = −0.795 V ⇒
Vbi = (0.0259 ) ln
LMb10 gb10 g OP
19 16 I D1 ( sat ) = 0.0145 mA
MN b15. x10 g PQ
10 2
13.11
or
Vbi = 0.874 V
LM FG V − V IJ OP 1/ 2
MN H V K PQ
g d = GO 1 1 − bi GS
Now
a f
PO
VDS ( sat ) = VPO − Vbi − VGS where

3b1.03 x10 g
−3
= 1.93 − 0.874 + VGS 3I −3
or G = O1
= P1
= 1.60 x10
VPO 1.93
VDS ( sat ) = 1.06 + VGS
or
We have
GO1 = 1.60 mS
VP = Vbi − VPO = 0.874 − 1.93
Then
or
VP = −1.06 V
VGS a
Vbi − VGS / VPO f g d ( mS )
Then
0 0.453 0.523
(i) VGS = 0 ⇒ VDS ( sat ) = 1.06 V -0.265 0.590 0.371
1 -0.53 0.727 0.236
(ii) VGS = VP = −0.265 V ⇒ -0.795 0.945 0.112
4 -1.06 1.0 0
VDS ( sat ) = 0.795 V
1
(iii) VGS = VP = −0.53 V ⇒ 13.12
2 n-channel JFET – GaAs
VDS ( sat ) = 0.53 V (a)
3 eµ n N d Wa
(iv) VGS = VP = −0.795 V ⇒ GO 1 =
4 L
VDS ( sat ) = 0.265 V
=
b1.6x10 g(8000)b2 x10 gb30x10 gb0.35x10 g
−19 16 −4 −4
−4
(c) 10 x10
I D1 ( sat ) or
L F V − V IJ FG1 − 2
= I M1 − 3G
Vbi − VGS IJ OP GO1 = 2.69 x10 S
−3
N H V KH 3 KQ
bi GS
(b)
a f
P1
VPO
PO
VDS ( sat ) = VPO − Vbi − VGS
LM F 0.874 − V I
N H 1.93 K
= 1.03 1 − 3 GS We have
2
ea N d
F 2
×G 1 −
0.874 − VGS IJ OP VPO =
2∈
H 3 1.93 KQ b1.6x10 gb0.35x10 g b2 x10 g
−19 −4 2 16
. )b8.85 x10 g
=
(i) For VGS = 0 ⇒ I D1 ( sat ) = 0.258 mA 2(131
−14
or
VPO = 1.69 V
202
We find 13.13
LMb5x10 gb2 x10 g OP
18 16
3I P 1 FG1 − Vbi − VGS IJ
Vbi = (0.0259 ) ln
MN b1.8x10 g PQ 6 2
g mS =
VPO H VPO K
or We have
Vbi = 1.34 V I P 1 = 1.03 mA , VPO = 1.93 V , Vbi = 0.874 V
Then The maximum transconductance occurs when
VP = Vbi − VPO = 1.34 − 1.69 VGS = 0
or Then
VP = −0.35 V
g mS ( max) =
3(1.03) FG1 − 0.874 IJ
We then obtain 1.93 H 1.93 K
a
VDS ( sat ) = 1.69 − 1.34 − VGS = 0.35 + VGS f or
For VGS = 0 ⇒ VDS ( sat ) = 0.35 V g mS = 0.524 mS
For W = 400 µm ,
1
For VGS = VP = −0.175 V ⇒ We have
2 0.524 mS
VDS ( sat ) = 0.175 V g mS ( max) = −4
400 x10 cm
(c)
or
I D1 ( sat )
g mS = 13.1 mS / cm = 1.31 mS / mm
LM FG V − V IJ FG1 − 2 V − V IJ OP
N H V KH 3 V KQ
= I P1 1 − 3 bi GS bi GS
PO PO 13.14
where The maximum transconductance occurs for
µ aeN f Wa
2 3 VGS = 0 , so we have
I = n d
(a)
FG1 − V IJ
P1
6∈L
3I P 1
(8000) b1.6 x10 gb2 x10 g g mS ( max) =
H V K
2 bi
−19 16
VPO
. )b8.85 x10 g
= PO
6(131
FG1 − V IJ
−14
b30x10 gb0.35x10 g −4 −4 3 = GO 1
H V K
bi
×
b10x10 g
PO
−4
We found
or GO 1 = 2.69 mS , Vbi = 1.34 V , VPO = 1.69 V
I P1 = 1.51 mA Then
Then
g mS ( max) = ( 2.69) 1 −
FG 1.34 IJ
LM F 1.34 − VGS I H 1.69 K
I D 1 ( sat ) = 151
N H
. 1− 3
1.69 K or
F 2
×G 1 −
1.34 − VGS IJ OP (mA) g mS ( max) = 0.295 mS
H 3 1.69 KQ This is for a channel length of L = 10 µm .

(b)
For
If the channel length is reduced to L = 2 µm ,
VGS = 0 ⇒ I D1 ( sat ) = 0.0504 mA
then
and for
10 F I
VGS = −0.175 V ⇒ I D1 ( sat ) = 0.0123 mA g mS ( max) = ( 0.295)
2
⇒
H K
g mS ( max) = 1.48 mS
203
13.15 By trial and error

n-channel MESFET – GaAs N d = 8.1x10 cm
15 −3
(a)
2 (b)
ea N d At T = 400 K ,
VPO =
2∈
F 400 I 3/ 2
b1.6x10 gb0.5x10 g b1.5x10 g

−19 −4 2 16 N (400) = N (300) ⋅
C C
H 300 K
. )b8.85 x10 g
=
2(131 = b4.7 x10 g(154
. )
−14 17
or or
VPO = 2.59 V N C (400) = 7.24 x10 cm
17 −3
Now Also
Vbi = φ Bn − φ n 400F I
where Vt = (0.0259 )
H K= 0.03453
FG N IJ = (0.0259) lnFG 4.7 x10 IJ 17
Then
300
φ n = Vt ln
HN K H 1.5x10 K
C
16
VT = 0.89 − (0.03453) ln
FG 7.24 x10 IJ 17
H 8.1x10 K
d
or 15
φ n = 0.0892 V
−b8.45x10 gb8.1x10 g
−17 15
so that
Vbi = 0.90 − 0.0892 = 0.811 V which becomes
Then VT = +0.051 V
VT = Vbi − VPO = 0.811 − 2.59
or 13.17
VT = −1.78 V We have
(b)
a−h = a−
LM 2 ∈aV + V bi DS
− VGS f OP 1/ 2
If VT < 0 for an n-channel device, the device is a

depletion mode MESFET.
N eN d Q
where
Vbi = φ Bn − φ n
13.16
Now
n-channel MESFET – GaAs
(a)
φ n = (0.0259) ln
FG 4.7 x10 IJ = 0.058 V 17
We want VT = +0.10 V H 5x10 K 16
Then Then
VT = Vbi − VPO = φ Bn − φ n − VPO Vbi = 0.80 − 0.058 = 0.742 V
so
For VGS = 0.5 V ,
V = 0.10 = 0.89 − V lnG
F N IJ − ea N 2
b g
HN K 2∈
−4
T t
C d
a − h = 0.8 x10

d
L 2(131. )b8.85x10 ga0.742 + V − 0.5f OP

−M
−14 1/ 2
F 4.7 x10 IJ
DS
(0.0259) lnG
17
−19 16
H N K or
a − h = b0.80 x10 g
d
b1.6x10 gb0.35x10 g N = 0.89 − 0.10

−19 −4 2
−4
− b2.898 x10 ga0.242 + V f

d
. )b8.85x10 g
+ 1/ 2
2(131
−14 −10
DS
or
(0.0259) lnG
F 4.7 x10 IJ + b8.45x10 g N = 0.79
17
H N K
17
d
d
204
Then 0.5 = 0.85 − φ n − VPO

VDS (V ) a−h ( µm) Now
0 0.716
φ n = (0.0259) ln
FG 4.7 x10 IJ 17
1
2
0.610
0.545
H N K d
5 0.410 and
2
ea N d
VPO =
2∈
13.18
VT = Vbi − VPO = φ Bn − φ n − VPO b1.6x10 gb0.25x10 g N −19 −4 2
. )b8.85x10 g
=
2(131
−14
We want
VT = 0 ⇒ φ n + VPO = φ Bn or
V = b4.31x10 g N
−3 −17
Device 1: N d = 3 x10 cm
16
PO d
Then Then
φ n = (0.0259) ln
FG 4.7 x10 IJ = 0.0713 V
17
0.5 = 0.85 − (0.0259 ) lnG

F 4.7 x10 IJ 17
H 3x10 K 16
H N K d
−b4.31x10 g N
so that −17
VPO = 0.89 − 0.0713 = 0.8187 V d

Now
LM 2 ∈V OP
−3
N d = 5.45 x10 cm
15
2 1/ 2
ea N d
VPO = ⇒a= PO
2∈ N eN Q d 13.20
=M
L 2(131. )b8.85x10 g(0.8187) OP −14 1/ 2
n-channel MESFET – silicon
(a) For a gold contact, φ Bn = 0.82 V .
N b1.6x10 gb3x10 g Q −19 16
We find
or
φ n = (0.0259) ln
FG 2.8x10 IJ = 0.206 V 19
a = 0.199 µm
Device 2: N d = 3 x10 cm
17 −3
H 10 K 16
and
Then Vbi = φ Bn − φ n = 0.82 − 0.206 = 0.614 V
φ n = (0.0259) ln
FG 4.7 x10 IJ = 0.0116 V
17
With VDS = 0 , VGS = 0.35 V
H 3x10 K 17
We find
so that a − h = 0.075 x10
−4
VPO = 0.89 − 0.0116 = 0.8784 V

=a−M bi GS
1/ 2
Now
L 2 ∈V OP 1/ 2 N eN Q d
a=M PO so that
N eN Q d
L 2(131. )b8.85x10 g(0.8784) OP

=M
−14 1/ 2 a = 0.075 x10
−4
N b1.6x10 gb3x10 g Q −19 17 L 2(11.7)b8.85x10 g(0.614 − 0.35) OP

+M
−14 1/ 2
or
a = 0.0651 µm
N b1.6x10 gb10 g Q −19 16
or
a = 0.26 µm
13.19 Now
2
VT = Vbi − VPO = φ Bn − φ n − VPO ea N d
VT = Vbi − VPO = 0.614 −
We want VT = 0.5 V , so 2∈
205
or so that
b1.6x10 gb0.26x10 g b10 g
−19 −4 2 16
Nd =
b
2(11.7 ) 8.85 x10 g(4.5)
−14
2(11.7 )b8.85 x10 g b1.6x10 gb0.4 x10 g

V = 0.614 −
T −14 −19 −4 2
We obtain or
VT = 0.092 V N d = 3.64 x10 cm
16 −3
(b) which means that

VDS ( sat ) = VPO − Vbi − VGSa f ∆N d = 3.64 x10 − 2 x10
16 16
a fa
= Vbi − VT − Vbi − VGS = VGS − VT f or
−3
Now ∆N d = 1.64 x10 cm
16
VDS ( sat ) = 0.35 − 0.092 Donors must be added

or Then
VDS ( sat ) = 0.258 V
φ n = (0.0259) ln
FG 2.8x10 IJ = 0.172 V
19
13.21
H 3.64 x10 K 16
so that
(a) n-channel MESFET - silicon
Vbi = 0.80 − 0.172 = 0.628 V
Vbi = φ Bn − φ n
We find
and
φ n = (0.0259) ln
FG 2.8x10 IJ = 0.188 V
19
VT = Vbi − VPO = 0.628 − 4.5
H 2 x10 K16
or
VT = −3.87 V
so Also
Now
Vbi = 0.80 − 0.188 ⇒ Vbi = 0.612 V VDS ( sat ) = VPO − Vbi − VGS a f
= 4.5 − ( 0.628 − ( −1))
2
ea N d or
VPO =
2∈ VDS ( sat ) = 2.87 V
b1.6x10 gb0.4 x10 g b2 x10 g
−19 −4 2 16
2(11.7 )b8.85 x10 g

= −14 13.22
µ n ∈W
or (a) k n =
VPO = 2.47 V 2 aL
We find b
(7800)(13.1) 8.85x10 −14 20 x10 −4 gb g
VT = Vbi − VPO = 0.612 − 2.47
=
b
2 0.30 x10
−4
gb1.2 x10 g −4
or or
VT = −186. V k n = 2.51 mA / V
2
and (b)
VDS ( sat ) = VPO − Vbi − VGS a f a
VDS ( sat ) = VPO − Vbi − VGS = VGS − VT f
= 2.47 − (0.612 − ( −1)) So for VGS = 15 . VT ⇒ VDS ( sat ) = (0.5)(0.12 )
or Or
VDS ( sat ) = 0.858 V VDS ( sat ) = 0.06 V
(b) and for VGS = 2VT ⇒ VDS ( sat ) = (1)( 0.12)
For VPO = 4.5 V , additional donor atoms must be
or
added. VDS ( sat ) = 0.12 V
We have
(c)
2 ∈VPO
2
VPO =
ea N d
2∈
⇒ Nd =
ea
2 a
I D 1 ( sat ) = k n VGS − VT f 2
206
For VGS = 1.5VT ⇒ I D 1 ( sat ) = (2.51)(0.06)

2
L′ 1 ∆L
= 0.90 = 1 − ⋅
Or L 2 L
I D1 ( sat ) = 9.04 µA We have
and for VGS = 2VT ⇒ I D 1 ( sat ) = (2.51)(0.12 )

2 L 2 ∈aV − V
∆L = M DS DS
( sat ) f OP 1/ 2
or N eN d Q
I D1 ( sat ) = 36.1 µA and
For VGS = 0 , VDS ( sat ) = VPO − Vbi
13.23 We find
2
(a) We have ea N d
a
g m = 2 k n VGS − VT f VPO =
2∈
so that
1.75 x10 = 2 k n (0.50 − 0.25)
−3 b1.6x10 gb0.4 x10 g b3x10 g
−19 −4 2 16
2(11.7 )b8.85x10 g
= −14
which gives
−3 µ ∈W or
k n = 3.5 x10 A / V = n
2
VPO = 3.71 V
2 aL
We obtain and
b3.5x10 g(2)b0.35x10 gb10 g
−3 −4 −4
Vbi
L b10 gb3x10 g OP
= (0.0259 ) ln M
19 16
. )b8.85 x10 g
W=
(8000)(131 −14
MN b15. x10 g PQ 10 2
or or
W = 26.4 µm Vbi = 0.902 V
(b) so that
a
I D 1 ( sat ) = k n VGS − VT f 2
VDS ( sat ) = 3.71 − 0.902 = 2.81 V
Then
For VGS = 0.4 V ,
b
I D1 ( sat ) = 3.5 x10
−3
g(0.4 − 0.25) 2 L 2(11.7)b8.85x10 g(5 − 2.81) OP
∆L = M
−14
1/ 2
or N b1.6x10 gb3x10 g Q −19 16
I D1 ( sat ) = 78.8 µA or
∆L = 0.307 µm
For VGS = 0.65 V ,
Now
b
I D1 ( sat ) = 3.5 x10
−3
g(0.65 − 0.25) 2
L′
= 0.90 = 1 − ⋅
1 ∆L
or L 2 L
I D1 ( sat ) = 0.56 mA or
1 ∆L
⋅ = 1 − 0.9 = 0.10
13.24 2 L
Computer plot so
−4
∆L 0.307 x10
L= =
13.25 2(0.10) 2(0.10)
Computer plot or
L = 1.54 µm
13.26
1
We have L ′ = L − ∆L
2
Or
207
13.27 13.28
FG L IJ (a) Saturation occurs when Ε = 1x10 V / cm
4
We have that I D′ 1 = I D1
H L − a1 2f∆L K As a first approximation, let
V
Assuming that we are in the saturation region, Ε = DS
then I D′ 1 = I D′ 1 ( sat ) and I D 1 = I D1 ( sat ) . We can L
write Then
I D′ 1 ( sat ) = I D1 ( sat ) ⋅
1 VDS = Ε ⋅ L = 1x10 b gb2 x10 g4 −4
1 ∆L or
1− ⋅
2 L VDS = 2 V
If ∆L << L , then (b)
1 ∆L
I D′ 1 ( sat ) = I D1 ( sat ) 1 + ⋅
LM OP We have that
2 L N Q h =h =M
L 2 ∈aV + V − V f OP bi DS GS
1/ 2
We have that
L 2 ∈aV − V (sat )f OP 1/ 2
2
N eN sat
Q d
∆L = M
and
Lb5x10 gb4 x10 g OP
DS DS
N eN Q d
V = (0.0259 ) ln M
18 16
=M
L 2 ∈V FG1 − V (sat )IJ OP 1/ 2 bi
MN b15. x10 g PQ 10 2
N eN H V K Q
DS DS
d DS
or
which can be written as Vbi = 0.892 V
∆L = V M
L 2 ∈ FG1 − V (sat )IJ OP 1/ 2
For VGS = 0 , we obtain
N eN V H V K Q L 2(11.7)b8.85x10 g(0.892 + 2) OP
DS
DS −14 1/ 2
=M
d DS DS
N b1.6x10 gb4 x10 g Q

If we write hsat −19
I ′ ( sat ) = I ( sat )a1 + λV f

16
D1 D1 DS
or
then by comparing equations, we have
hsat = 0.306 µm
1 L 2 ∈ F V ( sat ) I O
1/ 2
λ= M G1 − V JK PQ
2 L N eN V H
DS (c)
We then find
d DS
The parameter is not independent of VDS . Define

DS
a
I D 1 ( sat ) = eN d v sat a − hsat W f
x=
VDS b
= 1.6 x10
−19
gb4 x10 gb10 g(0.50 − 0.306)
16 7
×b10 gb30 x10 g

and consider the function
VDS ( sat ) −4 −4
1F1 − 1 I which is directly proportional to or

xH xK
f =
I D1 ( sat ) = 3.72 mA
λ . We find that (d)
x f ( x) For VGS = 0 , we have
1..5 0.222 LM FG V
I D 1 ( sat ) = I P 1 1 − 3
IJ FG1 − 2 Vbi IJ OP
N HV KH 3 KQ
bi
1.75 0.245
VPO
2.0 0.250 PO
2.25 0.247 Now

2.50 0.240 µ aeN f Wa
2 3
2.75 0.231 I = P1
n d
3.0 0.222 6∈L

So that λ is nearly a constant.
208
b
(1000) 1.6 x10 −19 4 x1016 gb g 2
F 2I ⇒
=
b
6(11.7 ) 8.85 x10
−14
g
I D1 ( sat ) = 9.08
H 1K I D1 ( sat ) = 18.2 mA
(b)
b 30 x10
−4
gb 0.5 x10
−4
g 3
If velocity saturation occurs, then the relation
a f
×
b2 x10 g −4 I D1 ( sat ) ∝ 1 L does not apply.
or
13.30
I P1 = 12.4 mA (a)
Also
2
ea N d
v = µ n Ε = (8000) 5x10 b g = 4 x10 cm / s
3 7
VPO = Then
2∈ L 2 x10
−4
b1.6x10 gb0.5x10 g b4 x10 g

−19 −4 2 16 td =
v
=
4 x10
7
⇒
2(11.7 )b8.85 x10 g

= −14
or
t d = 5 ps
or
VPO = 7.73 V (b)
Assume v sat = 10 cm / s
7
Then
LM F 0.892 I FG1 − 2 0.892IJ OP Then
I D1 ( sat ) = 12.4 1 − 3
N H 7.73 K H 3 7.73 K Q
−4
L 2 x10
td = = 7
⇒
or v sat 10
I D1 ( sat ) = 9.08 mA t d = 20 ps
13.29 13.31
(a) If L = 1 µm , then saturation will occur
when
(a) v = µ n Ε = (1000) 10 b g = 10 cm / s
4 7
VDS = Ε ⋅ L = 10 b gb1x10 g = 1 V
4 −4
td =
L
v
=
2 x10
10
7
−4
⇒ t d = 20 ps
We find
h2 = hsat
L 2 ∈aV + V − V f OP
=M bi DS GS
1/ 2 (b)
For v sat = 10 cm / s ,
7
N eN Q d
L 2 x10
−4
We have Vbi = 0.892 V and for VGS = 0 , we td = = 7

⇒ t d = 20 ps
v sat 10
obtain
L 2(11.7)b8.85x10 g(0.892 + 1) OP
=M
−14 1/ 2
13.32
N b1.6x10 gb4 x10 g Q
hsat −19 16 The reverse-bias current is dominated by the
generation current. We have
or
VP = Vbi − VPO
hsat = 0.247 µm
We find
Then
I D 1 ( sat ) = eN d v sat a − hsat W a f Vbi = ( 0.0259 ) ln
18 16
b
= 1.6 x10
−19
gb4 x10 gb10 g(0.50 − 0.247)
16 7
MN b1.5x10 g PQ 10 2
×b10 gb30 x10 g

−4 −4 or
Vbi = 0.884 V
or and
I D1 ( sat ) = 4.86 mA 2
ea N d
If velocity saturation did not occur, then from the VPO =
previous problem, we would have 2∈
209
b1.6x10 gb0.3x10 g b3x10 g

−19 −4 2 16 (b)
For VDS = 1 V ⇒ I DG = 0.42 pA
2(11.7 )b8.85 x10 g
= −14
(c)
or For VDS = 5 V ⇒ I DG = 0.50 pA
VPO = 2.09 V
Then
13.33
VP = 0.884 − 2.09 = −1.21 = VGS
(a) The ideal transconductance for VGS = 0 is
Now
L 2 ∈aV + V − V f OP 1/ 2 FG Vbi IJ
x =M
n
N eN
bi
Q
DS
d
GS g mS = GO1 1 −
H VPO K
where
=M
L 2(11.7)b8.85x10 ga0.884 + V − (−1.21)f OP
−14
DS
1/ 2
GO 1 =
eµ n N d Wa
N b1.6x10 gb3x10 g −19

Q 16
L
or b1.6x10 g(4500)b7 x10 g
−19 16
x = b4.31x10 ga2.09 + V f
−10 1/ 2 = −4
15
. x10
× b5x10 gb0.3 x10 g
n DS
−4 −4
(a)
For VDS = 0 ⇒ , x n = 0.30 µm or
(b) GO1 = 5.04 mS
For VDS = 1 V ⇒ , x n = 0.365 µm We find
(c) 2
ea N d
For VDS = 5 V ⇒ x n = 0.553 µm VPO =
2∈
The depletion region volume is
L F I af b1.6x10 gb0.3x10 g b7 x10 g
−19 −4 2 16
Vol = (a )
2 H K
(W ) + xn (2a )(W ) =
. )b8.85x10 g
2(131
−14
b gFGH 2.4 x210 IJK b30x10 g or

−4
−4 −4
= 0.3 x10 VPO = 4.35 V
+a x fb0.6 x10 gb30 x10 g

We have
n
−4 −4
F 4.7 x10 IJ = 0.049 V

= (0.0259 ) lnG
17
or
Vol = 10.8 x10 + x b18 x10 g
−12 −8
φn
H 7 x10 K 16
n
so that
(a) Vbi = φ Bn − φ n = 0.89 − 0.049 = 0.841 V
−11
For VDS = 0 ⇒ Vol = 1.62 x10
3
cm Then
(b) FG 0.841 IJ
For VDS = 1 V ⇒ Vol = 1.74 x10
(c)
−11
cm
3 g mS = 5.04 1 −
H 4.35 K
−11
or
For VDS = 5 V ⇒ Vol = 2.08 x10
3
cm g mS = 2.82 mS
The generation current is
I = eG
F n IJ ⋅Vol = b1.6x10 gb15. x10 g ⋅Vol −19 10
(b)
With a source resistance
H 2τ K 2b5 x10 g
i
DG −8
gm g′ 1
O
g m′ = ⇒ m =
or 1 + g m rs g m 1 + g m rs
I = b2.4 x10 g ⋅ Vol
−2
DG
For
(a) g m′ 1
= 0.80 =
For VDS = 0 ⇒ I DG = 0.39 pA gm 1 + (2.82 )rs
210
which yields 13.35

rs = 88.7 Ω (a) For a constant mobility
eµ n N d a
2
(c)
fT =
ρL L L 2π ∈ L
2
rs =
A aeµ nfb0.3x10 gb5x10 g
=
σA
=
n
−4 −4
=
b1.6x10 g(5500)b10 gb0.25x10 g
−19 17 −4 2
. )b8.85 x10 gb10 g

so
2π (131
−14 −4 2
L = (88.7)b1.6 x10 g(4500)b7 x10 g

−19 16
or
×b0.3x10 gb5x10 g
−4 −4
f T = 755 GHz
or (b)
L = 0.67 µm Saturation velocity model:
v
f T = sat
13.34 2πL
gm Assuming v sat = 10 cm / s , we find
7
fT =
2πCG 10
7
where
∈ WL
fT =
b g
2π 10
−4
CG = or
a f T = 15.9 GHz
=
(131 b
. ) 8.85 x10
−14 −4
5 x10 15. x10
−4
gb gb g
−4
0.3 x10 13.36
or ∆E C
CG = 2.9 x10
−15
F (a) Voff = φ B − − VP 2
e
We must use g m′ , so we obtain where
b2.82 x10 g(0.80) = 124 GHz
−3
VP 2 =
eN d d d
2
2π b2.9 x10 g
fT = −15 2 ∈N
We have b1.6x10 gb3x10 gb350x10 g
−19 18 −8 2
2(12.2 )b8.85 x10 g

1 1 1 = −14
⇒ τC =
fT =
2πτ C 2πf T
=
b
2π 124 x10
9
g or
or VP 2 = 2.72 V
−12
τ C = 1.28 x10 s Then
The channel transit time is Voff = 0.89 − 0.24 − 2.72
−4
. x10
15 −11 or
tt = = 1.5 x10 s
10
7 Voff = −2.07 V
The total time constant is (b)
−11 −12 −11
τ = 1.5x10 + 1.28 x10 = 1.63x10
so that
s
nS =
∈N
e(d + ∆d )
bV − V g
g off
1 1
fT = =
2πτ 2π 1.63 x10
−11
b g For Vg = 0 , we have
(12.2) 8.85x10 −14b g
or (2.07)
f T = 9.76 GHz
nS =
b1.6x10 −19
g(350 + 80) ⋅ 10 −8
or
−2
nS = 3.25 x10 cm
12
211
13.37 13.38
(a) We have ∆E C
Voff = φ B − − VP 2
I D ( sat ) =
∈N W
( d + ∆d )
bV − V g off
− VO v sg We want Voff
e
= −0.3 V , so
We find
−0.30 = 0.85 − 0.22 − VP 2
F I = ∂ LM I (sat ) OP = ∈ v
g mS
H W K ∂V N W Q (d + ∆d )
g
D N s
or
eN d d d
2
(12.2)b8.85x10 gb2 x10 g −14 7 VP 2 = 0.93 V =

S 2 ∈N
= = 5.02
(350 + 80) ⋅ 10 −8
cm We can then write
or 2 ∈N VP 2
dd =
2
g mS mS eN d
= 502
W mm b
2(12.2 ) 8.85x10 g(0.93)
−14
(b)
At Vg = 0 , we obtain
=
b1.6x10 −19
gb2 x10 g 18
We then obtain
I D ( sat )
W
=
( d + ∆d )
b−V − V gv
∈N
off O S
−6
d d = 2.51x10 cm = 251 A
°
(12.2)b8.85x10 g −14
= (2.07 − 1)b2 x10 g 7
(350 + 80) ⋅ 10 −8
or
I D ( sat )
= 5.37 A / cm = 537 mA / mm
W
212
Chapter 14
Problem Solutions 14.3
αI ( x )
g′ =
14.1 hν
1.24 1.24
(a) λ = µm For hν = 1.3 eV ⇒ λ = = 0.95 µm
E 1.3
Then −1
For silicon, α ≈ 3 x10 cm ,
2
Ge: E g = 0.66 eV ⇒ λ = 1.88 µm

Then for
. eV ⇒ λ = 111
Si: E g = 112 . µm
I ( x ) = 10 W / cm
−2 2
GaAs: E g = 1.42 eV ⇒ λ = 0.873 µm we obtain

(b)
g′ =
b3x10 gb10 g ⇒ 2 −2
E=
λ
1.24
b1.6x10 g(1.3) −19
g ′ = 1.44 x10 cm s
19 −3 −1
For λ = 570 nm ⇒ E = 2.18 eV

The excess concentration is
For λ = 700 nm ⇒ E = 1.77 eV
δn = g ′τ = 1.44 x10 10 ⇒
19 −6
b gb g
−3
δn = 1.44 x10 cm
13
14.2
(a) GaAs
hν = 2 eV ⇒ λ = 0.62 µm
14.4
so −7
−1
n-type GaAs, τ = 10 s
α ≈ 15
4
. x10 cm
(a)
Then We want
I ( x)
= exp( −αx ) = exp − 1.5 x10 b 4
gb0.35x10 g
−4 δn = δp = 10 cm = g ′τ = g ′ 10
15 −3 −7
b g
IO or
or 10
15
g′ =
−3 −1
= 10 cm s
22
I ( x) −7
= 0.59 10
IO We have
so the percent absorbed is (1-0.59), or 1.24
hν = 1.9 eV ⇒ λ = = 0.65 µm
41% 1.9
(b) Silicon so that
Again hν = 2 eV ⇒ λ = 0.62 µm −1
α ≈ 1.3x10 cm
4
So
−1
Then
α ≈ 4 x10 cm
3
αI ( x ) ( g ′ )(hν )
Then g′ = ⇒ I ( x) =
hν α
I ( x)
IO
= exp( −αx ) = exp − 4 x10 b 3
gb0.35x10 g−4
=
b10 gb1.6x10 g(1.9)
22 −19
4
1.3 x10
or
or
I ( x)
I (0) = 0.234 W / cm = I O
2
= 0.87
IO
(b)
so the percent absorbed is (1-0.87), or I ( x)
13%
IO
= 0.20 = exp − 1.3 x10 x b 4
g
We obtain x = 1.24 µm
215
where L p = Dpτ p
2
14.5
GaAs The photon flux in the semiconductor is
(a) Φ( x ) = Φ O exp( −αx )
For hν = 1.65 eV ⇒ λ = 0.75 µm and the generation rate is
So G L = αΦ( x ) = αΦ O exp( −αx )
−1
α ≈ 0.7 x10 cm
4
so we have
For 75% obsorbed, d δpn
2
a f − δp n
=−
αΦ O
exp( −αx )
I ( x) dx
2
Lp
2
Dp
= 0.25 = exp( −αx )
IO The general solution is of the form
Then FG − x IJ + B expFG + x IJ
1F I 1 1 F I δpn = A exp
HL K HL K
αx = ln
H K
0.25
⇒x=
0.7 x10
4
ln
0.25 H K p p
or
x = 1.98 µm
−
αΦ Oτ p
α Lp − 1
2 2
a f
exp −α x
(b) At x → ∞ , δpn = 0
For 75% transmitted,
So that B = 0 , then
I ( x)
= 0.75 = exp − 0.7 x10 x
4
b g FG − x IJ − αΦ τ exp(−αx)
δpn = A exp
H L K α L −1
O p
IO 2 2
we obtain p p
x = 0.41 µm At x = 0 , we have
Dp
d δpn a f = sδpn
14.6 dx x = 0 x=0
GaAs so we can write
−4
For x = 1 µm = 10 cm , we have 50% absorbed αΦ Oτ p
δpn = A − 2 2
or 50% transmitted, then x =0 α Lp − 1
I ( x) and
= 0.50 = exp( −αx )
IO
We can write
a f
d δpn
=−
A
+
α Φ Oτ p
2
FI F I F I α Lp − 1
2 2
dx x=0 Lp
1 1 1
α=
xHK H K H K
⋅ ln
0.5
=
10
−4
⋅ ln(2 ) Then we have
AD p α Φ Oτ p D p
2
sαΦ Oτ p
or − + = sA −
α Lp − 1 α Lp − 1
2 2 2 2
α = 0.69 x10 cm
4 −1 Lp
This value corresponds to Solving for A , we find
λ = 0.75 µm , E = 1.65 eV LM s + αD OP
αΦ Oτ p
α L − 1 N s + bD L gQ
p
A= 2 2
⋅
p p p
14.7 The solution can now be written as
The ambipolar transport equation for minority
carrier holes in steady state is αΦ τ R s + αD ⋅ expFG − x IJ
⋅S
a f + G − δp δp =
HL K
O p p
α L − 1 T s + bD L g
n
d δpn
2 2 2
Dp n
=0 p p p p
or
dx
2 L
τp − exp( −αx ) r
d δpn
2
a f − δp
2 2
n
=−
GL
dx Lp Dp
216
14.8
We have 14.9
d δn p
2
b g + G − δn FG IJ JL
H
J K
VOC = Vt ln 1 +
p
Dn L
=0
τn
2
dx S
or F 30x10 IJ
= (0.0259 ) lnG 1 +
−3
d δn p
2
b g − δn2 2
p
=−
GL H J K S
dx Ln Dn where
where Ln = Dnτ n
2
J = en M
L 1 ⋅ D + 1 ⋅ D OP
2 n p
The general solution can be written in the form

F xI F xI
S
NN τ N τ Q
i
a n d p
= A coshG J + B sinhG J + G τ which becomes

δn p
HL K HL K n n
L n
J = b1.6 x10 gb1.8 x10 g

S
−19 6 2
For s = ∞ at x = 0 means that δn p (0) = 0 ,

Then ×M
L 1 ⋅ 225 + 1 ⋅ 7 OP
0 = A + G L τ n ⇒ A = − G Lτ n N N 5x10 10 5x10 Q
a
−8 19 −8
At x = W , or
d δn p b g J = b5.18 x10 g M
L 6.7 x10 + 118. x10 OP
−7
4
−15
− Dn
dx x =W
= soδn p
x =W
S
N N Q a
Now Then
FG W IJ + B sinhFG W IJ + G τ
δn p (W ) = − G L τ n cosh
N J b A / cm g V (V ) 2
HL K HL K
a S OC
L n
n n 1E15 3.47E-17 0.891
and 1E16 3.47E-18 0.950
d bδn g F W I B coshFG W IJ 1E17 3.48E-19 1.01
sinhG J +
Gτ
HL K L HL K 1E18 3.53E-20 1.07
p
=− L n
dx Lx =W n n n n
so we can write
Gτ D F W I BD coshFG W IJ
sinhG J −
14.10
HL K L HL K
L n n n
(a)
L n n n n
I L = J L ⋅ A = 25x10 b
g(2) = 50 mA −3
FWI
= s − G τ coshG J We have
HL K
o L n
L 1 ⋅ D + 1 ⋅ D OP
J = en M
n
FWI
2 n p
+ B sinhG J + G τ
HL K L n
S
NN τ N τ Q
i
a n d p
n or
Solving for B, we find J = b1.6 x10 gb15
. x10 g
−19 10 2
B= L 1 ⋅ 18 + 1 ⋅ 6 OP
×M
LM FG W IJ + s τ coshFG W IJ − s τ OP N 3x10 5x10 10 5x10 Q
16 −6 19 −7
N
G L Ln sinh
HL K HL K Q o n o n
which becomes
FWI FWI
n n
coshG J + s sinh G J
−12
D J S = 2.29 x10 A / cm
2
HL K HL K
n
o
L n n n
or
−12
The solution is then I S = 4.58 x10 A
L F x IO F x I
δn = G τ M1 − coshG J P + B sinhG J
We have
p
N H L KQ H L K
L n
LM F V I − 1OP
N GH V JK Q
n n
I = I L − I S exp
where B was just given.
217
or
LMexpFG V IJ − 1OP LM1 + V OP ⋅ expFG V IJ = 1 + I
N V Q HV K I
m m L
N HV K Q
−3 −12
I = 50 x10 − 4.58 x10 t t S
t −3
500 x10
= 1+ = 1.092 x10
11
We see that when I = 0 , V = VOC = 0.599 V . −12
4.58 x10
We find By trial and error, we find
V (V ) I (mA) Vm = 0.577 V
0 50 and the current at the maximum power point is
0.1 50 I m = 478.3 mA
0.2 50
0.3 50 The maximum power is then
0.4 49.9 Pm = I mVm = 276 mW
0.45 49.8 The maximum power has increased by a factor
0.50 48.9 of 11.1 compared to the previous problem, which
0.55 42.4 means that the efficiency has increased slightly.
0.57 33.5
0.59 14.2
14.12
(b)
Let x = 0 correspond to the edge of the space
The voltage at the maximum power point is
charge region in the p-type material. Then
found from
LM1 + V OP ⋅ expFG V IJ = 1 + I Dn
2
b g − δn
d δn p p
= −GL
N V Q HV K I
m m L
τn
2
dx
t t S
or
b g − δn
−3
50 x10
d δn p
2
= 1+ = 1.092 x10
10
p GL
4.58 x10
−12
2 2
=−
By trial and error, dx Ln Dn
Vm = 0.520 V where
G L = α Φ( x ) = α Φ O exp( −αx )
At this point, we find
I m = 47.6 mA Then we have
so the maximum power is d δn p

2
b g − δn exp( −αx )
p
=−
αΦ O
Pm = I mVm = (47.6)(0.520)
2 2
dx Ln Dn
or The general solution is of the form
Pm = 24.8 mW FG − x IJ + B expFG + x IJ
(c)
We have
δn p = A exp
HL K HL K
n p
V Vm 0.520 α Φ Oτ n
V = IR ⇒ R = = = − exp( −αx )
α Ln − 1
2 2
−3
I Im 47.6 x10
or At x → ∞ , δn p = 0 so that B = 0 , then
R = 10.9 Ω
FG − x IJ − αΦ τ ⋅ exp(−αx)
δn p = A exp
H L K α L −1
O n
2 2
14.11 n n
If the solar intensity increases by a factor of 10, α Φ Oτ n

We also have δn p (0) = 0 = A − ,
then I L increases by a factor of 10 so that α Ln − 1
2 2
I L = 500 mA . Then which yields

LMexpFG V IJ − 1OP αΦ τ
A = 2 2O n
N HV K Q
−3 −12
I = 500 x10 − 4.58 x10
t
α Ln − 1
At the maximum power point We then obtain
218
LMexpFG − x IJ − exp(−αx)OP
α Φ Oτ n (d)
α L −1N H L K
δn p = The photoconductor gain is
2 2
n Q n τp µp FG IJ
where Φ O is the incident flux at x = 0 .
Γph =
tn
1+
µn H K
where
14.13 2
For 90% absorption, we have L L

tn = =
Φ( x ) µ nΕ µ nV
= exp( −αx ) = 0.10
ΦO Then
Then FG1 + µ IJ = τ V bµ + µ g
τ p µ nV
L H µ K
p p
Γph = 2 2 n p
1 L
exp( +αx ) = = 10 n
0.1 or
or b10 g(5) (1000 + 430)
−7
F I
1 Γph =
b100x10 g
H K ⋅ ln(10)
2
x= −4
α
−1
or
For hν = 1.7 eV , α ≈ 10 cm
4
Γph = 7.15
Then
1F I
x=
10 H K
4
⋅ ln(10) ⇒ x = 2.3 µm 14.15
n-type, so holes are the minority carrier
and for hν = 2.0 eV , α ≈ 10 cm , so that
5 −1
(a)
x = 0.23 µm δp = G Lτ p = 10 b gb10 g 21 −8
so that
−3
δp = δn = 10 cm
13
14.14
−3 −1
G L = 10 cm s and N d > N a so holes are the
20
(b)
minority carrier.
(a)
∆σ = e(δp) µ n + µ p b g
δp = g ′τ = G L τ p b
= 1.6 x10
−19
gb10 g(8000 + 250)
13
so that or
δp = δn = 10 b gb10 g20 −7
∆σ = 1.32 x10
−2
(Ω − cm)−1
or (c)
δp = δn = 10 cm
13 −3 ( ∆σ ) AV
I L = J L ⋅ A = ( ∆σ ) AΕ =
(b) L
∆σ = e(δp) µ n + µ p b g =
b1.32 x10 gb10 g(5) −2 −4
b
= 1.6 x10
−19
gb10 g(1000 + 430)
13
or I L = 0.66 mA
100 x10
−4
or
(d)
∆σ = 2.29 x10
−3
(Ω − cm)−1
τp FG1 + µ IJ = τ V bµ + µ g
t H µ K
p p
(c) Γph = 2 n p
( ∆σ ) AV n
L n
IL = JL ⋅ A =
L b10 g(5) (8000 + 250)
−8
=
b2.29 x10 gb10 g(5) −3 −3
=
b100x10 g −4 2
−4
100 x10 or Γph = 4.13
or
I L = 115
. mA
219
14.16 W = 0.620 µm
Φ( x ) = Φ O exp( −αx ) The prompt photocurrent density is
The electron-hole generation rate is
g ′ = αΦ( x ) = αΦ O exp( −αx )
J L 1 = eG LW = 1.6 x10 b −19
gb10 gb0.620x10 g
21 −4
or
and the excess carrier concentration is
J L1 = 9.92 mA / cm
2
δp = τ pα Φ( x )
(b)
Now The total steady-state photocurrent density is
∆σ = e(δp) µ n + µ p b g b
J L = e W + Ln + Lp G L g
and We find
J L = ∆σΕ
The photocurrent is now found from Ln = Dnτ n = b g (25) 2 x10 −7 = 22.4 µm
zz z z and
W xO
= (10)b10 g = 10.0 µm
IL = ∆σΕ ⋅ dA = dy ∆σΕ ⋅ dx −7
0 0
Lp = D pτ p
fz
xO Then
a
= We µ n + µ n Ε δp ⋅ dx
0
b
J L = 1.6 x10
−19
g(0.62 + 22.4 + 10.0)b10 gb10 g −4 21
Then or
z
J L = 0.528 A / cm
2
xO
b
I L = We µ n + µ p Εα Φ Oτ p g 0
exp( −αx )dx
LM 1
= Web µ + µ gΕα Φ τ − exp( −αx )
OP xO
14.18
In the n-region under steady state and for Ε = 0 ,
n
Nα p
Q O p
we have
a f + G − δp
0
d δpn
2
which becomes
I = Web µ + µ gΕΦ τ 1 − expa −αx f
Dp n
=0
dx ′
L
τp
2
L n p O p O
Now or
I = b50 x10 gb1.6 x10 g(1200 + 450)(50) a f − δp
−4 −19
d δpn
2
L GL
=−
×b10 gb 2 x10 g 1 − expb −b5x10 gb10 gg
n
dx ′
16 −7 4 −4 2 2
Lp Dp
or where L p = Dpτ p and where x ′ is positive in
2
I L = 0.131 µA
the negative x direction. The homogeneous
solution is found from
14.17
(a)
2
a f − δp
d δpnh nh
=0
LM b2 x10 gb10 g OP = 0.832 V dx ′
2 2
16 18
Lp
Vbi = ( 0.0259 ) ln The general solution is found to be
MN b1.5x10 g PQ 10 2
FG − x ′ IJ + B expFG + x ′ IJ
The space charge width is
δpnh = A exp
HL K HL K
W=M
L 2 ∈aV + V f FG N + N IJ OP 1/ 2
The particular solution is found from
p p
N e H N N KQ
bi R a d
−δpnp − G L
a d
=
=M
L 2(11.7)b8.85x10 g(0.832 + 5) −14 2
Lp Dp
N 1.6 x10
−19 which yields
GL Lp
2
F 2 x10 + 10 I OP
×G
16 18
1/ 2
δpnp = = G Lτ p
H b2 x10 gb10 gJK Q

Dp
16 18
The total solution is the sum of the homogeneous
or and particular solutions, so we have
220
FG − x ′ IJ + B expFG + x ′ IJ + G τ Φ( x )
= exp( −αx ) = 0.10
δpn = A exp
HL K HL K
p p
L p
ΦO
One boundary condition is that δpn remains
1
finite as x ′ → ∞ which means that B = 0. Then exp( +αx ) = = 10
0.1
At x ′ = 0 , pn (0) = 0 = δpn (0) + pnO , so that
Then
δpn (0) = − pnO 1 1
We find that x = ln(10) = 2 ln(10)
b
A = − pnO + G L τ p g or
α 10
The solution is then written as x = 230 µm
b
δpn = G L τ p − G Lτ p + pnO exp g FGH −Lx ′ IJK
p
14.21
For the Al x Ga1− x As system, a direct bandgap for
The diffusion current density is found as
J p = − eD p
d δpn a f 0 ≤ x ≤ 0.45 , we have
E g = 1.424 + 1.247 x
dx x ′= 0
But At x = 0.45 , E g = 1.985 eV , so for the direct
a f
d δpn
=−
d δpn a f bandgap
1.424 ≤ E g ≤ 1.985 eV
dx dx ′
since x and x ′ are in opposite directions. which yields
So 0.625 ≤ λ ≤ 0.871 µm
J p = + eD p
d δpn a f
dx ′ x ′= 0 14.22
b
= eD p − G L τ p + pnO g FGH −L1IJK expFGH −Lx ′ IJK
p p x ′= 0
For x = 0.35 in GaAs1− x Px , we find
(a) E g = 1.85 eV and (b) λ = 0.670 µm
Then
eD p pnO 14.23
J p = eG L L p + (a)
Lp
For GaAs, n2 = 3.66 and for air, n1 = 1.0 .
The critical angle is
14.19 FG n IJ = sin F 1 I = 15.9°
H n K H 3.66K
−1 −1
We have θ C = sin 1
J L = eΦ O 1 − exp( −αW ) 2
b
= 1.6 x10 gb10 g 1 − expb−b3x10 gW g
−19 17 3
The fraction of photons that will not experience
total internal reflection is
or 2θ C 2(15.9 )
= 16 1 − expb −b3x10 gW g (mA)
3 = ⇒ 8.83%
JL 360 360
−4 (b)
Then for W = 1 µm = 10 cm , we find
Fresnel loss:
J L = 4.15 mA
F n − n IJ = F 3.66 − 1I
R=G
2 2
H n + n K H 3.66 + 1K = 0.326
2 1
For W = 10 µm ⇒ J L = 15.2 mA
2 1
For W = 100 µm ⇒ J L = 16 mA The fraction of photons emitted is then
(0.0883)(1 − 0.326) = 0.0595 ⇒ 5.95%
14.20
The minimum α occurs when λ = 1 µm which
−1
gives α = 10 cm . We want
2
221
14.24
We can write the external quantum efficiency as 14.25
η ext = T1 ⋅ T2 For an optical cavity, we have
where T1 = 1 − R1 with R1 is the reflection FI λ
coefficient (Fresnel loss), and the factor T2 is the
N
HK 2
=L
fraction of photons that do not experience total If λ changes slightly, then N changes slightly
also. We can write
internal reflection. We have
F n − n IJ 2 N 1λ 1 a
N1 + 1 λ 2 f
R =G
=
Hn +n K
2 1
1 2 2
Rearranging terms, we find
a
2 1
so that N 1λ 1 N1 + 1 λ 2 Nλ f Nλ λ
FG IJ
n2 − n1
2
2
−
2
= 1 1 − 1 2 − 2 =0
2 2 2
T1 = 1 − R1 = 1 −
Hn +n K2 1
If we define ∆λ = λ 1 − λ 2 , then we have
which reduces to N1 λ2
∆λ =
4 n1n2 2 2
T1 =
a
n1 + n2
2
f We can approximate λ 2 = λ , then
Now consider a solid angle from the source N 1λ 2L
point. The surface area described by the solid = L ⇒ N1 =
2 λ
angle is π p . The factor T1 is given by
2
Then
πp λ
2
1 2L
T1 = ⋅ ∆λ =
4πR 2 λ
2
2
From the geometry, we have which yields
θF I p 2 θ F I λ
2
H K
sin C =
2 R
⇒ p = 2 R sin C
2 H K ∆λ =
2L
Then the area is
θC F I
A = π p = 4 R π sin
H K 14.26
2 2 2
2 For GaAs,
Now 1.24 1.24
hν = 1.42 eV ⇒ λ = =
πp
2
Fθ I E 1.42
T1 = = sin
H 2K
2 C
or
4πR
2
λ = 0.873 µm
From a trig identity, we have
F I a
θC 1
f
Then
b0.873x10 g = 5.08x10
H K = 1 − cos θ C
2
sin −4 2
λ
2
2 2 ∆λ =
−7
2b0.75x10 g
= −4
cm
Then 2L
1
a
T1 = 1 − cos θ C
2
f or
∆λ = 5.08 x10 µm
−3
The external quantum efficiency is now
f a f
4 n1n2 1
η ext = T1 ⋅ T2 = ⋅ 1 − cos θ C
n1 + n2 a
2
2
or
fa f
2 n1n2
η ext = 1 − cos θ C
a
n1 + n2
2
222
Chapter 15
Problem Solutions
15.4
15.1 (a)
The limit of low injection means that We have β eff = β A β B + β A + β B
n B (0) = (0.1) N B = ( 0.1) 10 b g = 10
16 15
cm
−3
Then
180 = 25β B + 25 + β B
Now
AeDB n B ( 0) or
IC = 155 = 26β B
xB
which yields
=
b g b g
(0.5) 1.6 x10 −19 (20) 1015 β B = 5.96
−4
3 x10 (b)
or We have
I C = 5.33 A β B i EA = iCB
or
15.2 FG 1 + β IJ i = i
βB
Hβ K
A
From the junction breakdown curve, for CA CB

A
BVCBO = 1000 V , we need the collector doping so
(5.96)F
1 + 25 I
−3
concentration to be N C ≈ 2 x10 cm
14
H 25 K i = 20 CA
Depletion width into the base (neglect Vbi ) which yields

LM 2 ∈V FG N IJ FG 1 IJ OP 1/ 2 iCA = 3.23 A
xp =
N e H N KH N + N K Q
BC C
B C B
15.5
=M
L 2(11.7)b8.85x10 g(1000) −14
Sketch
N 1.6x10 −19
15.6
×G
F 2 x10 IJ F 1
14
I OP 1/ 2
We want
F I
H 5x10 K H 5x10 + 2 x10
15 15 14
KQ 1 V 1
PT = I C ,rated ⋅ CC ⇒ I C ,rated
2 2 2
24
2
= 20
H K
or
which yields
x p = 3.16 µm (Minimum base width)
I C ,rated = 3.33 A
Depletion width into the collector
L 2(11.7)b8.85x10 g(1000)
x =M
−14
Then
VCC 24
n
N 1.6x10 −19 RL =
I C ,rated
=
3.33
×G
F 5x10 IJ F 1 15
I OP 1/ 2
or
H 2 x10 K H 5x10 + 2 x10
14 15 14
KQ R L = 7.2 Ω
or
x n = 78.9 µm (Minimum collector width) 15.7
If VCC = 25 V , then
15.3 VCC 25
I C ( max ) = = = 0.25 A < I C ,rated
Compute plot RL 100
The power
a
P = I CVCE = I C VCC − I C R L f
225
To find the maximum power point, set V = 3.31 V

dP V
= 0 = VCC − 2 I C RL = 25 − I C (2 )100 Then, I = , so that
dI C R
which yields I C = 0.125 A I 1 = 1.839 A
So I 2 = 1.655 A
P( max) = (0.125) 25 − (0.125)(100)
I 3 = 1.505 A
or
P( max) = 156
. W < PT Now, P = IV , so
So, maximum VCC is VCC = 25 V P1 = 6.09 W
P2 = 5.48 W
15.8 P3 = 4.98 W
VDS
Now Ron = (b)
ID Now
Power dissipated in transistor F 1 + 1 + 1 I = 5 = V (1.288)
P = I DVDS =
2
VDS
V
H 18. 3.6 2.2 K
Ron or
V = 3.88 V
We have
Then
200 − VDS
ID = I 1 = 2.16 A , P1 = 8.38 W
100
so we can write I 2 = 1.08 A , P2 = 4.19 W
F 200 − V I ⋅V 2
VDS I 3 = 1.77 A , P3 = 6.85 W
P=
H 100 K DS
DS
=
Ron
For T = 25C , Ron = 2 Ω , 15.10
For BV = 200 V , from the junction breakdown
Then
F 200 − V I ⋅V VDS
2
curve, we need the drain doping concentration to
H 100 K
−3
N D ≈ 15
15
DS
DS
= be . x10 cm
2
For the channel length (neglect Vbi )
which yields
VDS = 3.92 V and L 2 ∈aV f FG N IJ FG 1 IJ OP
L( min) = M
1/ 2
F 200 − 3.92 I (3.92) = 7.69 W N e H N KH N + N KQ

D D
P=
H 100 K L 2(11.7)b8.85x10 g(200)
B
−14
D B
We then have =M
T Ron VDS P N 1.6x10 −19
25 2.0 3.92 7.69 F 1.5x10 IJ F 1 I OP

×G
15 1/ 2
50
75
2.33
2.67
4.55
5.20
8.89
10.1
H 10 K H 15. x10 + 10 K Q
16 15 16
100 3 5.83 11.3 or L( min) = 184

. µm
For the drift region
15.9
L 2(11.7)b8.85x10 g(200)
W ( min) = M
−14
(a) N 1.6x10 −19
We have, for three devices in parallel,

×G
F 10 IJ F 1 I OP
16 1/ 2
V V
+ +
1.8 2 2.2
V
= 5 ⇒ V (1.51) = 5 H 1.5x10 K H 15. x10 + 10 K Q
15 15 16
or or W ( min) = 12.3 µm
226
15.13
15.11 Tj ,max − Tamb
(b) In saturation region, PD ,rated =
a
I D = Kn VGS − VT f = 0.25aV − 4f
2
GS
2
and
or
θ dev − case
VDS = VDD − I D R = 40 − I D (10) Tj ,max − Tamb

We find θ dev − case =
VGS = 5 V , I D = 0.25 A , VDS = 37.5 > VDS ( sat ) PD ,rated
VGS = 6 V , I D = 1 A , VDS = 30 > VDS ( sat ) 150 − 25

= = 2.5° C / W
VGS = 7 V , I D = 2.25 A , VDS = 17.5 > VDS ( sat ) 50
Then
For VGS = 8 V and VGS = 9 V , transistor is
biased in the nonsaturation region. For
a
Tdev − Tamb = PD θ dev − case + θ case − amb f
so
VGS = 8 V .
40 − VDS
a
150 − 25 = PD 2.5 + θ case − amb f
ID = = 0.25 2(8 − 4 )VDS − VDS
2
or
We find
10 a
125 = PD 2.5 + θ case − amb f
VDS = 2.92 V , I D = 3.71 A
15.14
For VGS = 9 V ,
We have
40 − VDS PD = I D ⋅ VDS = (4 )(5) = 20 W
ID = = 0.25 2(9 − 4 )VDS − VDS
2
10 Now
and we find
VDS = 1.88 V , I D = 3.81 A
a
Tdev − Tamb = PD θ dev − case + θ case − snk + θ snk − amb f
or
Power dissipated in the transistor is PT = I DVDS . Tdev − 25 = 20(1.75 + 0.8 + 3) = 111
We find which yields
VGS = 5 V , PT = 9.375 W Tdev = 136° C
VGS = 6 V , PT = 30 W Also
Tdev − Tcase = PD ⋅ θ dev − case = (20)(1.75) = 35
VGS = 7 V , PT = 39.4 W
so
VGS = 8 V , PT = 10.8 W Tcase = Tdev − 35 = 136 − 35
VGS = 9 V , PT = 7.16 W or
Tcase = 101° C
15.12 And
a
Tdev − Tamb = PD θ dev − case − θ case − amb f so
Tcase − Tsnk = PD ⋅ θ case − snk = (20)(0.8) = 16° C
T − Tamb Tsnk = Tcase − 16 = 101 − 16
θ dev − case = dev − θ case − amb or
PD
Tsnk = 85° C
175 − 25
= − 6 = 9° C / W
10 15.15
Now We have
PD ,rated =
Tj ,max − Tamb
=
175 − 25 a
Tdev − Tamb = PD θ dev − case + θ case − amb f
θ dev − case 9 so
or a
200 − 25 = 25 3 + θ case − amb f
PD ,rated = 16.7 W or
θ case − amb = 4° C / W
227
15.16 15.18
We have The reverse-biased p-well to substrate junction
Tj ,max − Tamb 175 − 25 corresponds to the J 2 junction in an SCR. The
θ dev − case = = = 10° C / W photocurrent generated in this junction will be
PD , rated 15
similar to the avalanche generated current in an
Now SCR, which can trigger the device.
Tj ,max − Tamb
PD =
θ dev − case + θ case − snk + θ snk − amb 15.19
Case 1: Terminal 1(+), terminal 2(-), and I G
175 − 25
= negative. This triggering was discussed in the
10 + 1 + 4 text.
or Case 2: Terminal 1(+), terminal 2(-), and I G
PD = 10 W positive. Gate current enters the P2 region
directly so that J3 becomes forward biased.
15.17 Electrons are injected from N2 and diffuse into
N1, lowering the potential of N1. The junction
We have α 1 + α 2 = 1 . Now
J2 becomes more forward biased, and the
β1 β2 increased current triggers the SCR so that
α1 = and α 2 =
1+ β1 1+ β2 P2N1P1N4 turns on.
Case 3: Terminal 1(-), terminal 2(+), and I G
so
β1 β2 positive. Gate current enters the P2 region
α1 + α2 = =1 + directly so that the J3 junction becomes more
1+ β1 1+ β2 forward biased. More electrons are injected from
which can be written as N2 into N1 so that J1 also becomes more
f a f a
β 1 + β 2 + β 2 1+ β1 forward biased. The increased current triggers
1= 1
a fa f
1+ β1 1+ β2
the P1N1P2N2 device into its conducting state.
Case 4: Terminal 1(-), terminal 2(+), and I G
or negative. In this case, the J4 junction becomes
a fa f a f a f
1+ β1 1+ β2 = β1 1+ β 2 + β2 1+ β1 forward biased. Electrons are injected from N3
and diffuse into N1. The potential of N1 is
Expanding, we find
1 + β 1 + β 2 + β 1β 2 lowered which increases the forward biased
potential of J1. This increased current then
= β 1 + β 1β 2 + β 2 + β 1β 2 triggers the P1N1P2N2 device into its
which yields conducting state.
β 1β 2 = 1
228

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Solution Manual Physics of Semiconductor Devices

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Semiconductor Physics and Devices: Basic Principles, 3rd edition Chapter 1

Solutions Manual Problem Solutions

Total of 4 atoms per unit cell

4 enclosed atoms = 4 atoms Unit cell vol. = a =

Total of 8 atoms per unit cell

Density of Ga = 2.22 x10 cm

4 As atoms per unit cell, so that

5.65 x10 Unit cell vol. = a =

1 atom per cell, so atom vol. = (1)

Then mass density is

(c) Mass density b4.62 x10 g −8 3

(b) A-type; 1 atom per unit cell

(ii) (110) plane, surface density,

(iii) (111) plane, surface density, (b)

or (b) Fraction by weight

(4.90)b1.6 x10 g −19

(1.90)b1.6 x10 g −19

b gb3x10 g V = 12.4 x10 V = 12.4 kV

Since Ψ1 is a solution, then 2.19

Since Ψ2 is also a solution, we may write

Ψ( x , t ) = A sin(πx ) exp( − jωt ) 2

Ψ( x , t ) dx = 1 = A sin (πx )dx

sin ( nπx )dx

A=+ 2 ,− 2,+ j 2,− j 2

k −ω = 0⇒ = vp = + 2b9.11x10 gb100 x10 g

2b9.11x10 gb12 x10 g

b1.054 x10 g π −34 2 2

larger than 10 mJ. where K = so E 2 = 2

2b1.66 x10 gb10 g

∂ ψ ( x) Use separation of variables, so let

Solution is of the form X ∂x Y ∂y Z ∂z

Solution is of the form Solution is of the form:

⋅ 2 = − k y and ⋅ 2 = −kz So that k x =

The reflection coefficient is

The transmission coefficient is

Probability at x compared to x = 0, given by

and m = 1.67 x10

F 2.2 I F1 − 2.2 I exp −2b9.98x10 gb10 g T| b1.054 x10 g W|

R| 2(1.08)b9.11x10 g(0.8 − 0.2)b1.6x10

−2 jK K expa K a f + expa − K a f s expa jK a f

The transmission coefficient is defined as (b)

∂ψ 2 ∂ψ 3 and since B1 = B2 , then

3 3 3 From B = − A tan K a , we can write

In turn, this equation can be written as

a f −b 9.11x10 gb1.6 x10 g

Substituting into the wave equation, we have

P = 4πr ψ ψ = 4πr ⋅ ⋅ G J expG 2m L h O F 1 I F 1I F −r I

To find the maximum probability

V (r ) = = periodic table. All have one valence electron in

and more like a metal. If a o were to h

decrease, the bandgap energy would Q.E.D.

solution into the wave equation, we obtain ∂ u( x ) LM F F E I tI OPUV

This equation can be written as

Setting u( x ) = u1 ( x ) for region I, this equation

We find that 3.5 Computer plot

So Using results of Problem 3.8

E 7 = 16.679 eV Points A, D; < 0 ⇒ negative effective

T = 500 K ⇒ E g = 1.066 eV For A:

g = b10 g b1.054 x10 g

T = 600 K ⇒ E g = 1.032 eV (0.07) 1.6 x10 −19

g b10 g b1.054 x10 g

(0.08) 1.6 x10 −19 = 1 1 d E E1α

g = b10 g b1.054 x10 g

(0.4) 1.6 x10 −19