Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1

By D. A. Neamen Problem Solutions

______________________________________________________________________________________

Chapter 1
Problem Solutions

1.1 Then
 
2 4 r
3
(a) fcc: 8 corner atoms  1 / 8  1 atom 

6 face atoms 1 / 2  3 atoms  3 
Ratio  3
100%  68%
Total of 4 atoms per unit cell  4r 
(b) bcc: 8 corner atoms  1 / 8  1 atom  
 
 3
1 enclosed atom =1 atom
(d) Diamond lattice
Total of 2 atoms per unit cell
(c) Diamond: 8 corner atoms  1 / 8  1 atom 8
Body diagonal  d  8r  a 3  a  r
6 face atoms 1 / 2  3 atoms 3
3
4 enclosed atoms = 4 atoms  8r 
Unit cell vol  a 3   

Total of 8 atoms per unit cell
 3
_______________________________________
 4 r 3 
8 atoms per cell, so atom vol  8 

1.2  3 
(a) Simple cubic lattice: a  2r Then
Unit cell vol  a 3  2r   8r 3
3
 
8 4 r 
3

 4 r 3 
1 atom per cell, so atom vol  1 Ratio  
 3 
  100%  34%
 3   8r 
3

 
Then  
 4 r 3   3
  _______________________________________
 3 
 
Ratio  100%  52.4%
8r 3 1.3
o
(b) Face-centered cubic lattice
(a) a  5.43 A ; From Problem 1.2d,
d
d  4r  a 2  a   2 2 r 8
2 a r
3

Unit cell vol  a 3  2 2  r 
3
 16 2  r 3 a 3 5.43 3 o
Then r    1.176 A
 4 r 3

4 atoms per cell, so atom vol  4
8 8

 Center of one silicon atom to center of
 3  o
Then nearest neighbor  2r  2.35 A
 
4 4 r 
3 (b) Number density
8
 3    5 10 22 cm 3
Ratio 
16 2  r 3
100%  74%

5.43 10 8
3

(c) Body-centered cubic lattice (c) Mass density

d  4r  a 3  a 
4
r  

N  At.Wt . 5 10 22 28.09 
3 NA 6.02 10 23
 4 
3
   2.33 grams/cm 3
Unit cell vol  a  
3
 r  _______________________________________
 3 
 4 r 3 
2 atoms per cell, so atom vol  2 

 3 
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(b) a  21.035  2.07 A

1.4 o

(a) 4 Ga atoms per unit cell

4 1
Number density  (c) A-atoms: # of atoms  8  1

5.65 10 8 3 8
1
 Density of Ga atoms  2.22 10 22 cm 3 Density 
4 As atoms per unit cell 2.07 10  8 3

 Density of As atoms  2.22 10 22 cm 3  1.13 10 23 cm 3

(b) 8 Ge atoms per unit cell 1
B-atoms: # of atoms  6   3
8 2
Number density 

5.65 10 8
3
 Density 
3
 Density of Ge atoms  4.44 10 22 cm 3 
2.07  10 8
3

_______________________________________  3.38 10 cm 3 23

_______________________________________
1.5
From Figure 1.15 1.9
 a  3 
 0.4330 a
o
(a) d    (a) a  2r  4.5 A
 2  2 
1
# of atoms  8  1
 0.43305.65  d  2.447 A
o
8
1
a Number density 
(b) d    2  0.7071a
2 4.5 10  8 3

 1.097 10 22 cm 3
 0.70715.65  d  3.995 A
o

N  At.Wt .
_______________________________________ Mass density   
NA
1.6

1.0974 10 12.5 22

a
2 6.02 10 23
  2 2 
 0.228 gm/cm 3
sin       54.74
 
2 a
3
3 2 4r o
2 (b) a   5.196 A
   109.5 3
_______________________________________ 1
# of atoms 8   1  2
8
1.7 2
Number density 
5.196 10 
o
(a) Simple cubic: a  2r  3.9 A 8 3

(b) fcc: a 
4r
 5.515 A
o
 1.4257 10 22 cm 3
2
Mass density   

1.4257 10 22 12.5 
4r o
6.02 10 23
(c) bcc: a   4.503 A
3  0.296 gm/cm 3
24r  o _______________________________________
(d) diamond: a   9.007 A
3
1.10
_______________________________________ From Problem 1.2, percent volume of fcc
atoms is 74%; Therefore after coffee is
1.8 ground,
(a) 21.035 2  21.035  2rB Volume = 0.74 cm 3
o _______________________________________
rB  0.4287 A
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

1.11 o
o (b) For 1.12(a), A-atoms; a  4.619 A
(b) a  1.8  1.0  2.8 A Surface density
(c) Na: Density 
1 / 2 1
  3.315 1014 cm 2
2.8 10  8 3 2
a 2
 2.28 10 22 cm 3 B-atoms;
Surface density
Cl: Density  2.28 10 22 cm 3
1
(d) Na: At. Wt. = 22.99   3.315  10 14 cm 2
2
Cl: At. Wt. = 35.45 a 2
So, mass per unit cell o
For 1.12(b), A-atoms; a  4.619 A
1 1
 22.99   35.45 Surface density
 
2 2
  4.85 10  23 1
6.02 10 23 
2
 3.315 1014 cm 2
Then mass density a 2
B-atoms;
4.85 10 23
  2.21 grams/cm 3 Surface density

2.8 10 8 3
 
1
 3.315  10 14 cm 2
_______________________________________ 2
a 2
For 1.12(a) and (b), Same material
1.12 _______________________________________
(a) a 3  22.2  21.8  8 A
o

o 1.14
Then a  4.62 A 1
Density of A: (a) Vol. Density 
a o3
1
  1.0110 22 cm 3
 
1
4.62 10 8
3
Surface Density 
2
a o 2
Density of B:
(b) Same as (a)
1
  1.0110 22 cm 3 _______________________________________

4.62 10 8 3

(b) Same as (a) 1.15
(c) Same material (i) (110) plane
_______________________________________ (see Figure 1.10(b))

1.13 (ii) (111) plane

22.2  21.8 o (see Figure 1.10(c))
a  4.619 A
3
1 1 
(a) For 1.12(a), A-atoms (iii) (220) plane   , ,    1, 1, 0
1 1 2 2 
Surface density  2 
a 
4.619 10 8 
2 Same as (110) plane and [110] direction
 1 1 1
 4.687 1014 cm 2 (iv) (321) plane   , ,   2, 3, 6
o
 3 2 1
For 1.12(b), B-atoms: a  4.619 A Intercepts of plane at
1 p  2, q  3, s  6
Surface density   4.687  10 14 cm 2 [321] direction is perpendicular to
a2
(321) plane
For 1.12(a) and (b), Same material
_______________________________________
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

1.16 Area of plane

(a)
1 1 1
1
 
 6.68923 10 8 5.79304 10 8 
 , ,   313
2
1 3 1  19.3755 10 16 cm 2
(b) 1
3
1 1 1
 , ,   121 Surface density  6
4 2 4 19.3755  10 16
_______________________________________  2.58 10 14 cm 2
(b) bcc
1.17 (i) (100) plane:
1 1 1 1
Intercepts: 2, 4, 3   , ,   Surface density  2  4.47  10 14 cm 2
 2 4 3 a
(634) plane (ii) (110) plane:
_______________________________________ 2
Surface density  2
a 2
1.18
o  6.32 10 14 cm 2
(a) d  a  5.28 A (iii) (111) plane:
a 2 o 1
(b) d   3.734 A 3
2 Surface density  6
a 3 o 19.3755  10 16
(c) d   3.048 A  2.58 10 14 cm 2
3
_______________________________________ (c) fcc
(i) (100) plane:
1.19 2
Surface density  2  8.94  10 14 cm 2
(a) Simple cubic a
(i) (100) plane: (ii) (110) plane:
1 1 2
Surface density   Surface density  2
a 2

4.73 10 8 
2
a 2
 4.47 1014 cm 2  6.32 10 14 cm 2
(ii) (110) plane: (iii) (111) plane:
1 1 1
Surface density  3  3
a 2
2 Surface density  6 2
19.3755  10 16
 3.16 1014 cm 2
(iii) (111) plane:  1.03 1015 cm 2
1 _______________________________________
Area of plane  bh
2
o
1.20
where b  a 2  6.689 A (a) (100) plane: - similar to a fcc:
Now 2
Surface density 

5.43 10 8
2

   
2
a 2
  3 a 2
2 2
h2  a 2
 2  4  6.78 10 cm 214
 
(b) (110) plane:
4.73  5.793 A
6 o
So h  Surface density 
4
2

2 5.43  10 8 
2

 9.59 1014 cm 2
Semiconductor Physics and Devices: Basic Principles, 4th edition Chapter 1
By D. A. Neamen Problem Solutions
______________________________________________________________________________________

(c) (111) plane: 1.23

2 Density of GaAs atoms
Surface density 
 3 25.43 10  8 2

8
 4.44  10 22 cm 3
 7.83 1014 cm 2
5.65 10 8 3

_______________________________________ An average of 4 valence electrons per atom,
So
1.21 Density of valence electrons
4r 42.37  o  1.77 10 23 cm 3
a   6.703 A _______________________________________
2 2
1 1
8  6 1.24
8 2  4 5 1017
(a) #/cm 
3

a3 6.703 10 8  
3 (a)
5 10 22
100%  10 3 %
3
 1.328 10 cm 22
2 1015
(b) 100%  4 10 6 %
1
4  2
1 5 10 22
4 2 _______________________________________
(b) #/cm 2 
a2 2
1.25
2
 (a) Fraction by weight

6.703  10 8
2
2   
2 1016 10.82
  1.542 10 7
 3.148 10 cm 2
14
 22

5 10 28.06
a 2 6.703 2 o (b) Fraction by weight
(c) d    4.74 A
2 2

 
1018 30.98
 2.208 10 5
1 1
(d) # of atoms  3   3   2
 
5 10 22 28.06
6 2 _______________________________________
Area of plane: (see Problem 1.19)
o 1.26
b  a 2  9.4786 A
1
o Volume density   2  10 16 cm 3
6a d3
h  8.2099 A
2 o

Area So d  3.684 10 6 cm  d  368.4 A

  
o
1 1 We have ao  5.43 A
 bh  9.4786 10 8 8.2099 10 8
2 2
d 368.4
 3.8909 10 15 cm 2 Then   67.85
ao 5.43
_______________________________________
2
#/cm 2  1.27
3.8909  10 15 1
= 5.14 1014 cm 2 Volume density   4  10 15 cm 3
d3
a 3 6.703 3 o o
d   3.87 A So d  6.30 10 6 cm  d  630 A
3 3
o
_______________________________________ We have ao  5.43 A
d 630
1.22 Then   116
a o 5.43
Density of silicon atoms  510 22 cm 3 and
4 valence electrons per atom, so _______________________________________
Density of valence electrons  2 10 23 cm 3
_______________________________________