Sheet 1

1- Assume that you wish to bias the transistor in

Figure(1) with IB=20µA. To what voltage must you
change the VBB supply? What are IC and VCE at the
Q-point, given that βDC=50?

2- Design a biased-transistor circuit using VBB=VCC=10V for a Q-point of

IC=5mA and VCE=4V Assume βDC=100. The design involves finding RB, RC,
and the minimum power rating of the transistor. (The actual power rating
should be greater.) Sketch the circuit.

3- Determine whether the transistor in Figure(2) is

biased in cutoff, saturation, or the linear region.
Remember that . IC =βDCIB is valid only in the linear
region
4- From the collector characteristic curves and the dc
load line in
Figure(3), determine the following:
(a) Collector saturation current
(b) VCE at cutoff
(c) Q-point values of IB, IC, and VCE

5- 14. Determine all transistor terminal voltages with

respect to ground in Figure(4).

6- (a) Determine VB in Figure(5).

(b) How is VB affected if the transistor is replaced by
one with a βDC=50?
7- Analyze the circuit in Figure(6) to determine the correct
voltages at the transistor terminals with respect to ground.
Assume βDC=100

8- Determine VB, VC, and IC in Figure(7).

9-

10-