7MBR35SB120 IGBT Modules

IGBT MODULE (S series)

1200V / 35A / PIM

Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit

Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rat ing Unit
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
IC Continuous Tc=25°C 50 A
Inverter

Collector current Tc=80°C 35

ICP 1ms Tc=25°C 100 A
Tc=80°C 70
-IC 35 A
Collector power dissipation PC 1 device 240 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Collector current IC Continuous Tc=25°C 35 A
Tc=80°C 25
Brake

ICP 1ms Tc=25°C 70 A

Tc=80°C 50
Collector power dissipation PC 1 device 180 W
Repetitive peak reverse voltage VRRM 1200 V
Repetitive peak reverse voltage VRRM 1600 V
Converter

Average output current IO 50Hz/60Hz sine wave 35 A

Surge current (Non-Repetitive) IFSM Tj=150°C, 10ms 360 A
I 2t (Non-Repetitive) I2 t half sine wave 648 A 2s
Operating junction temperature Tj +150 °C
Storage temperature Tstg -40 to +125 °C
Isolation between terminal and copper base *2 Viso AC : 1 minute AC 2500 V
voltage between thermistor and others *3 AC 2500
Mounting screw torque 3.5 *1 N·m
*1 Recommendable value : 2.5 to 3.5 N·m (M5)
*2 All terminals should be connected together when isolation test will be done.
*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24
should be connected together and shorted to copper base.
IGBT Modules 7MBR35SB120

Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current ICES VCE=1200V, VGE=0V 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 0.2 µA
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=35mA 5.5 7.2 8.5 V
Collector-Emitter saturation voltage VCE(sat) VGE=15V, Ic=35A chip 2.1 V
terminal 2.25 2.7
Input capacitance Cies VGE=0V, VCE=10V, f=1MHz 4200 pF
Inverter

Turn-on time ton VCC=600V 0.35 1.2 µs

tr IC=35A 0.25 0.6
tr(i) VGE=±15V 0.1
Turn-off toff RG=33Ω 0.45 1.0
tf 0.08 0.3
Forward on voltage VF IF=35A chip 2.3 V
terminal 2.45 3.3
Reverse recovery time of FRD trr IF=35A 0.35 µs
Zero gate voltage collector current ICES VCES=1200V, VGE=0V 1.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 0.2 µA
Collector-Emitter saturation voltage VCE(sat) IC=25A, VGE=15V chip 2.1 V
terminal 2.25 2.7
Brake

Turn-on time ton VCC=600V 0.35 1.2 µs

tr IC=25A 0.25 0.6
Turn-off time toff VGE=±15V 0.45 1.0
tf RG=51Ω 0.08 0.3
Reverse current IRRM VR=1200V 1.0 mA
Forward on voltage VFM IF=35A chip 1.1 V
Converter

terminal 1.2 1.5

Reverse current IRRM VR=1600V 1.0 mA
Resistance R T=25°C 5000 Ω
Thermistor

T=100°C 465 495 520

B value B T=25/50°C 3305 3375 3450 K

Thermal resistance Characteristics

Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT 0.52
Inverter FWD 0.90
Thermal resistance ( 1 device ) Rth(j-c)
Brake IGBT 0.69 °C/W
Converter Diode 0.75
Contact thermal resistance * Rth(c-f) With thermal compound 0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

[Converter] [B ra k e ] [In v er ter ] [T h e rm is to r]

21(P) 2 2 (P 1 )

8 9

2 0 (G u) 1 8 (G v) 1 6 (G w )

1(R) 2(S) 3(T) 1 9 (E u ) 1 7 (E v ) 1 5 (E w )

7 (B ) 4 (U ) 5 (V ) 6 (W )

1 4 (G b) 1 3 (G x) 1 2 (G y) 1 1 (G z)
1 0 (E n )

23(N) 2 4 (N 1 )
IGBT Modules 7MBR35SB120
Characteristics (Representative)

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o
Tj= 25 C (typ.) o
Tj= 125 C (typ.)
80 80

VGE= 20V 15V 12V 15V 12V

VGE= 20V

60 60
Collector current : Ic [ A ]

Collector current : Ic [ A ]
10V
10V
40 40

20 20

8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Inverter ] [ Inverter ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
o
VGE=15V (typ.) Tj= 25 C (typ.)
80 10

o o
Tj= 25 C Tj= 125 C

8
60
Collector - Emitter voltage : VCE [ V ]
Collector current : Ic [ A ]

40

Ic= 70A
20
Ic= 35A
2
Ic= 17.5A

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Inverter ]
[ Inverter ]
Dynamic Gate charge (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
o
o Vcc=600V, Ic=35A, Tj= 25 C
VGE=0V, f= 1MHz, Tj= 25 C
10000 1000 25

800 20
Cies
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Gate - Emitter voltage : VGE [ V ]

600 15

1000

400 10

Coes
200 5
Cres

100 0 0
0 5 10 15 20 25 30 35 0 100 200 300 400
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
IGBT Modules 7MBR35SB120

[ Inverter ] [ Inverter ]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, Rg=33Ω, Tj=25°C Vcc=600V, VGE=±15V, Rg=33Ω, Tj=125°C
1000 1000

toff

toff
500 500
Switching time : ton, tr, toff, tf [ nsec ]

Switching time : ton, tr, toff, tf [ nsec ]

ton ton

tr
tr

tf

100 100
tf

50 50
0 20 40 60 0 20 40 60
Collector current : Ic [ A ] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=35A, VGE=±15V, Tj=25°C Vcc=600V, VGE=±15V, Rg=33Ω
5000 10

o
Eon(125 C)
8
Switching loss : Eon, Eoff, Err [ mJ/pulse ]
Switching time : ton, tr, toff, tf [ nsec ]

1000
6 Eon(25 C)
o

500

toff Eoff(125 C)
o
4

o
Eoff(25 C)
ton

tr 2 o
Err(125 C)
100
o
tf Err(25 C)

50 0
10 50 100 500 0 20 40 60
Gate resistance : Rg [ Ω ] Collector current : Ic [ A ]

[ Inverter ] [ Inverter ]
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area
Vcc=600V, Ic=35A, VGE=±15V, Tj=125°C +VGE=15V, -VGE=
<15V, Rg>33Ω, Tj<125°C
25 100 = =

Eon

20 80
Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Collector current : Ic [ A ]

15 60

10 40

Eoff

5 20

Err
0 0
10 50 100 500 0 200 400 600 800 1000 1200 1400
Gate resistance : Rg [ Ω ] Collector - Emitter voltage : VCE [ V ]
IGBT Modules 7MBR35SB120

[ Inverter ] [ Inverter ]
Forward current vs. Forward on voltage (typ.) Reverse recovery characteristics (typ.)
Vcc=600V, VGE=±15V,Rg=33Ω
80 300

o o
Tj=125 C Tj=25 C
o
trr(125 C)

60

Reverse recovery time : trr [ nsec ]

Reverse recovery current : Irr [ A ]
100
Forward current : IF [ A ]

o
trr(25 C)

40

o
Irr(125 C)
20

o
Irr(25 C)

0 10
0 1 2 3 4 0 10 20 30 40 50 60
Forward on voltage : VF [ V ] Forward current : IF [ A ]

[ Converter ]
Forward current vs. Forward on voltage (typ.)

80

o o
Tj= 25 C Tj= 125 C

60
Forward current : IF [ A ]

40

20

0
0.0 0.4 0.8 1.2 1.6 2.0
Forward on voltage : VFM [ V ]

[ Thermistor ]
Transient thermal resistance Temperature characteristic (typ.)

5 200

100
Thermal resistanse : Rth(j-c) [ ••/W ]

1 FWD[Inverter]
Conv. Diode
IGBT[Brake]
Resistance : R [ k Ω ]

10
IGBT[Inverter]

0.1

0.01 0.1
0.001 0.01 0.1 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
Pulse width : Pw [ sec ] Temperature [
o
C]
IGBT Modules 7MBR35SB120

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector current vs. Collector-Emitter voltage
o o
Tj= 25 C (typ.) Tj= 125 C (typ.)
60 60

VGE= 20V 15V 12V VGE= 20V 15V 12V

50 50

40 40
Collector current : Ic [ A ]

Collector current : Ic [ A ]
10V
10V
30 30

20 20

10 10

8V
8V
0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector - Emitter voltage : VCE [ V ] Collector - Emitter voltage : VCE [ V ]

[ Brake ] [ Brake ]
Collector current vs. Collector-Emitter voltage Collector-Emitter voltage vs. Gate-Emitter voltage
VGE=15V (typ.) o
Tj= 25 C (typ.)
60 10

o o
Tj= 25 C Tj= 125 C
50
8
Collector - Emitter voltage : VCE [ V ]

40
Collector current : Ic [ A ]

30

20
Ic= 50A

Ic= 25A
2
10 Ic= 12.5A

0 0
0 1 2 3 4 5 5 10 15 20 25
Collector - Emitter voltage : VCE [ V ] Gate - Emitter voltage : VGE [ V ]

[ Brake ] [ Brake ]
Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.)
o o
VGE=0V, f= 1MHz, Tj= 25 C Vcc=600V, Ic=25A, Tj= 25 C
10000 1000 25

800 20
Collector - Emitter voltage : VCE [ V ]
Capacitance : Cies, Coes, Cres [ pF ]

Gate - Emitter voltage : VGE [ V ]

Cies

600 15

1000

400 10

200 5
Coes

Cres

100 0 0
0 5 10 15 20 25 30 35 0 50 100 150 200 250
Collector - Emitter voltage : VCE [ V ] Gate charge : Qg [ nC ]
IGBT Modules 7MBR35SB120

M712
Outline Drawings, mm

122±1
8-R2.25±0.3
110±0.3
4-ø5.5±0.3 94.5±0.3
+0.5
13.09 15.24 19.05 19.05 15.24 3.81 4=15.24 11.5 0

21 20 19 18 17 16 15 14 10

+0.5
0
11.5
19.697

3.81

9
99.6±0.3
11.43

22

57.5±0.3
50±0.3

8
62±1

3.81
15.24
39.9±0.3
3.81

23
11.43

15.475

7
3.81
11.665

24

1 2 3 4 5 6
4.198

A A
4.055 14.995 15.24 15.24 15.24 15.24 15.24 22.86

1.15±0.2

1.5±0.3
6±0.3
ø0.4 ø2.5±0.1
0.8±0.2

ø2.1±0.1

Section A-A
3.5±0.5
1.1±0.3

1±0.2
2.9±0.3
20.5±1
17±1

6.5±0.5

Shows theory dimensions