Outline research about IGBT in terms of:-

o Definition
o Construction
o Working operation
o Types
o Using
o Failure Modes and Mechanisms.
o Advantages
o Disadvantages
o Applications
o Reference

Names of the research team

1. Mohamed Esam Hashem

2. Mostafa Mahmoud
3. Yousef Syed Abd Elnaby
4. Mohamed Ahmed Abd Elatef
5. Mahmoud Samey Fathi

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 Insulated-Gate Bipolar Transistor (IGBT)

Definition:
An insulated-gate bipolar transistor is an ideal voltage-controlled switching
device consisting of a combination of a BJT and a MOSFET. An IGBT uses the
best qualities of a BJT and PMOSFET to generate a transistor that possesses
the input characteristics of a MOSFET and the output characteristics of a BJT.

We can say that IGBT is a device designed with the aim of providing high input
impedance like PMOSFET while low state power loss like BJT.

Construction of IGBT:
IGBT is made of four layers of semiconductor to form a PNPN structure.
o The collector (C) electrode is attached to P layer while the emitter (E) is attached between
the P and N layers.
o A P+ substrate is used for the construction of
IGBT.
o An N- layer is placed on top of it to form PN
junction J1.
o Two P regions are fabricated on top of N- layer
to form PN junction J2.
o The emitter and gate are metal electrodes.
o The emitter is directly attached to the N+ region
while the gate is insulated using a silicon
dioxide layer.
o The base P+ layer inject holes into N- layer that is why it is called injector layer.
o While the N- layer is called the drift region. Its thickness is proportional to voltage blocking
capacity.
o The P layer above is known as the body of IGBT.
o The N- layer is designed to have a path for current flow between the emitter and collector
through the junction using the channel that is created under the influence of the voltage at
the gate electrode.
o The P region is designed in such a way to leave a path in the middle for the gate (G) electrode.
o N+ regions are diffused over the P region as shown in the figure.
The emitter and gate are metal electrodes.

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The emitter is directly attached to the N+ region while the gate is insulated using a silicon dioxide
layer. The base P+ layer inject holes into N- layer that is why it is called injector layer. While the N-
layer is called the drift region. Its thickness is proportional to voltage blocking capacity. The P layer
above is known as the body of IGBT. The N- layer is designed to have a path for current flow
between the emitter and collector through the junction using the channel that is created under the
influence of the voltage at the gate electrode.
Working of IGBT
The two terminals of IGBT collector (C) and emitter (E) are used for the conduction of current while
the gate (G) is used for controlling the IGBT. Its working is based on the biasing between Gate-
Emitter terminals and Collector-Emitter terminals.

▪ The collector-emitter is connected to Vcc such that the collector is kept at a positive voltage
than the emitter. The junction j1 becomes forward biased and j2 becomes reverse biased. At
this point, there is no voltage at the gate. Due to reverse j2, the IGBT remains switched off and
no current will flow between collector and emitter.
▪ Applying a gate voltage VG positive than the emitter, negative charges will accumulate right
beneath the SiO2- layer due to capacitance. Increasing the VG increases the number of charges
which eventually form a layer when the VG exceeds the threshold voltage, in the upper P-
region. This layer form N- channel that shorts N- drift region and N+ region.

▪ The electrons from the emitter flow from N+ region into N- drift region. While the holes from the
collector are injected from the P+ region into the N- drift region. Due to the excess of both
electrons and holes in the drift region, its conductivity increases and starts the conduction of
current. Hence the IGBT switches ON.

Types of IGBT:
There are two types of IGBT based on the inclusion of N+ buffer layer. The inclusion of this extra
layer divides them into symmetrical and asymmetrical IGBT.
Punch through IGBT:
The Punch through IGBT includes N+ buffer layer due to which it is also known as an asymmetrical
IGBT. They have asymmetric voltage blocking capabilities i.e., their forward and reverse breakdown
voltages are different. Their reverse breakdown voltage is less than its forward breakdown voltage.
It has faster switched speed
.Non-Punch through IGBT
They are also known as symmetrical IGBT due to the absence of extra N+ buffer layer. The
symmetry in structure provides symmetrical breakdown voltage characteristics i.e., the forward and
reverse breakdown voltages are equal. Due to this reason, they are used in AC circuits.

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 IGBT Failure Modes and Mechanisms.

Failure modes in an IGBT are simple at top level:

1. Short circuit.
2. Open circuit.
3. Parameter drift.

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Parameter drift occurs as a part degrades and the electrical characteristics such as VCE(ON) or
ICE drift from the acceptable operating range due to the accumulation of damage within a device or
module.

IGBT used:
• IGBT is most commonly used in power application such as DC and AC
• motor drive, UPS system, power supply and drive for solenoid.
• IGBT used in an unregulated power supply (UPS) system.
• The IGBT is used combines an isolated gate FET for the control input and bipolar power
transistor as a switch in a single device.
• It is also used in inverter.
• IGBT is fitted in the of resonant mode converter circuits. Optimized IGBT is accessible for
both low conduction loss and low switching loss.
• Inductive heating cookers.
• IGBT used in power distribution.
• Electric vehicle motor drives.
• The IGBT used in switched-mode power supplies (SMPS).
• Solar inverter.
• IGBT used in due-mode or E-auto automobile system.
• IGBT used in solar and wind power generation plant.

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 Advantages

• It has higher voltage and current handling capabilities.

• It has a very high input impedance.
• It can switch very high currents using very low voltage.
• It is voltage-controlled i.e. it has no input current and low input losses.
• The gate drive circuitry is simple and cheap.
• It can be easily switched ON by applying positive voltage and OFF by applying zero or
slightly negative voltage.
• It has very low ON-state resistance
• It has a high current density, enabling it to have a smaller chip size.
• It has a higher power gain than both BJT and MOSFET.
• It has a higher switching speed than BJT.

Disadvantages
• It has a lower switching speed than MOSFET.
• It is unidirectional it cannot conduct in reverse.
• It cannot block higher reverse voltage.
• It is costlier than BJT and MOSFET.
• It has latching problems due to the PNPN structure resembling thyristor.

Applications of IGBT
It is used in SMPS (Switched Mode Power Supply) to supply power to sensitive medical equipment
and computers.
It is used in UPS (Uninterruptible Power Supply) system.
It is used in AC and DC motor drives offering speed control.
It is used in chopper and inverters.
It is used in solar inverters
Wind turbine

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Reference
https://www.nrel.gov/pv/assets/pdfs/2015_pvmrw_131_das.pdf
https://electronicscoach.com/insulated-gate-bipolar-transistor.html
https://www.electricaltechnology.org/2021/08/igbt.html
https://www.electronics-notes.com/articles/electronic_components/fet-field-effect-transistor/what-
is-igbt-insulated-gate-bipolar-transistor.php
https://www.nrel.gov/pv/assets/pdfs/2015_pvmrw_131_das.pdf

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