FDH27N50

August 2002

FDH27N50
27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET
Applications Features
Switch Mode Power Supplies(SMPS), such as • Low Gate Charge Qg results in Simple Drive Require-
ment
• PFC Boost
• Two-Switch Forward Converter • Improved Gate, Avalanche and High Reapplied dv/dt
Ruggedness
• Single Switch Forward Converter
• Flyback Converter • Reduced rDS(ON)

• Buck Converter • Reduced Miller Capacitance and Low Input Capacitance

• High Speed Switching • Improved Switching Speed with Low EMI

• 175°C Rated Junction Temperature

Package Symbol
JEDEC TO-247
SOURCE
DRAIN
D
GATE

G
DRAIN
(FLANGE)
S

Absolute Maximum Ratings TC = 25oC unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 500 V
VGS Gate to Source Voltage ±30 V
Drain Current
Continuous (TC = 25oC, VGS = 10V) 27 A
ID o
Continuous (TC = 100 C, VGS = 10V) 19 A
Pulsed (Note 1) 108 A
Power dissipation 450 W
PD
Derate above 25oC 3 W/oC
o
TJ, TSTG Operating and Storage Temperature -55 to 175 C
o
Soldering Temperature for 10 seconds 300 (1.6mm from case) C
Mounting Torque, 8-32 or M3 Screw 10ibf*in (1.1N*m)

Thermal Characteristics
o
RθJC Thermal Resistance Junction to Case 0.33 C/W
RθCS Thermal Resistance Case to Sink, Flat, Greased Surface 0.24 TYP oC/W

o
RθJA Thermal Resistance Junction to Ambient 40 C/W

©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2

 FDH27N50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDH27N50 FDH27N50 TO-247 Tube - 30

Electrical Characteristics Tc = 25°C (unless otherwise noted)

Symbol Parameter Test Conditions Min Typ Max Units

Statics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 500 - - V
Reference to 25oC
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient - 0.64 - V/°C
ID = 1mA
rDS(ON) Drain to Source On-Resistance VGS = 10V, ID = 13.5A - 0.17 0.19 Ω
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 3.3 4.0 V
VDS = 500V TC =25oC - - 25
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TC = 150oC - - 250
IGSS Gate to Source Leakage Current VGS = ±30V - - ±100 nA

Dynamics
gfs Forward Transconductance VDS = 50V, ID = 13.5A 11 - - S
Qg(TOT) Total Gate Charge at 10V VGS = 10V - 56 67 nC
Qgs Gate to Source Gate Charge VDS = 400V - 17 20 nC
Qgd Gate to Drain “Miller” Charge ID = 27A - 18 22 nC
td(ON) Turn-On Delay Time VDD = 250V - 14 - ns
tr Rise Time ID = 27A - 54 - ns
td(OFF) Turn-Off Delay Time RG = 4.3Ω - 47 - ns
tf Fall Time RD = 9.3Ω - 54 - ns
CISS Input Capacitance - 3550 - pF
VDS = 25V, VGS = 0V
COSS Output Capacitance - 409 - pF
f = 1MHz
CRSS Reverse Transfer Capacitance - 22 - pF

Avalanche Characteristics
EAS Single Pulse Avalanche Energy (Note 2) 2552 - - mJ
IAR Avalanche Current - - 27 A

Drain-Source Diode Characteristics

Continuous Source Current MOSFET symbol D
IS - - 27 A
(Body Diode) showing the
integral reverse G
Pulsed Source Current (Note 1)
ISM - - 108 A
(Body Diode) p-n junction diode. S
VSD Source to Drain Diode Voltage ISD = 27A - 0.89 1.2 V
trr Reverse Recovery Time ISD = 27A, dISD/dt = 100A/µs - 563 714 ns
QRR Reverse Recovered Charge ISD = 27A, dISD/dt = 100A/µs - 9.2 14 µC
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 7mH, IAS = 27A

©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2

 FDH27N50
Typical Characteristics

200 200
TJ = 25oC TJ = 175oC
ID, DRAIN TO SOURCE CURRENT (A)

ID, DRAIN TO SOURCE CURRENT (A)

VGS DESCENDING VGS DESCENDING
100 100
10V 10V
7V 6V
6V 5.5V
5.5V 5V
5V 4.5V
4.5V 4V

10 10

PULSE DURATION = 80µs PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX DUTY CYCLE = 0.5% MAX
1 1
1 10 100 1 10 100

VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. Output Characteristics Figure 2. Output Characteristics

NORMALIZED DRAIN to SOURCE ON RESISTANCE

100 3.5
PULSE DURATION = 80µs
PULSE DURATION = 80µs
90 DUTY CYCLE = 0.5% MAX
3.0 DUTY CYCLE = 0.5% MAX
VDD = 80V
80
ID , DRAIN CURRENT (A)

70 2.5

60
2.0
50
1.5
40

30 TJ = 175oC TJ = 25oC 1.0

20
0.5
10
VGS = 10V, ID = 13.5A
0 0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 -50 -25 0 25 50 75 100 125 150 175

VGS , GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC)

Figure 3. Transfer Characteristics Figure 4. Normalized Drain To Source On

Resistance vs Junction Temperatrue

10000 12
ID = 27A
VGS , GATE TO SOURCE VOLTAGE (V)

VGS = 0V, f = 1MHz CISS

10
100V
C, CAPACITANCE (pF)

1000 8 250V
COSS

6
400V

100 4

CRSS
2

10 0
1 10 100 0 10 20 30 40 50 60 70

Qg, GATE CHARGE (nC)

VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source Voltage Figure 6. Gate Charge Waveforms For Constant
Gate Current

©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2

 FDH27N50
Typical Characteristics (Continued)

60 200
ISD , SOURCE TO DRAIN CURRENT (A)

100
50

ID, DRAIN CURRENT (A)

100µs
40
10
OPERATION IN THIS AREA
30 LIMITED BY RDS(ON)
1ms
TJ = 175oC TJ = 25oC
20 10ms
1 DC

10
TC = 25oC

0 0.1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 10 100 1000

VSD , SOURCE TO DRAIN VOLTAGE (V) VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Body Diode Forward Voltage vs Body Figure 8. Maximum Safe Operating Area
Diode Current

30

25
ID, DRAIN CURRENT (A)

20

15

10

0
25 50 75 100 125 150 175

TC, CASE TEMPERATURE (°C)

Figure 9. Maximum Drain Current vs Case Temperature

ZθJC , NORMALIZED THERMAL IMPEDANCE

100
0.50

0.20

0.10
10-1 t1
0.05
PD

0.02 t2

DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
10-2
10-5 10-4 10-3 10-2 10-1 100 101
t1 , RECTANGULAR PULSE DURATION (s)

Figure 10. Normalized Maximum Transient Thermal Impedance

©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2

 FDH27N50
Test Circuits and Waveforms

VDS BVDSS

tP
VDS
L
IAS
VARY tP TO OBTAIN VDD
+
REQUIRED PEAK IAS RG
VDD
VGS -
DUT

tP
0V IAS 0
0.01Ω
tAV

Figure 11. Unclamped Energy Test Circuit Figure 12. Unclamped Energy Waveforms

VDS
Qg(TOT)
RL

VDS
VGS = 10V

VGS +

VDD VGS
-

DUT VGS = 1V

Ig(REF) 0
Qg(TH)
Qgs Qgd

Ig(REF)
0

Figure 13. Gate Charge Test Circuit Figure 14. Gate Charge Waveforms

VDS tON tOFF

td(ON) td(OFF)

RL tr tf
VDS
90% 90%

+
VGS
VDD 10% 10%
- 0

DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0

Figure 15. Switching Time Test Circuit Figure 16. Switching Time Waveform

©2002 Fairchild Semiconductor Corporation FDH27N50 Rev. A2

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I1
Mouser Electronics

Authorized Distributor

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