ION MASS ANALYZER

o BS ion pass though Magnetic

field
o Ions are acted force on right
angle to magnetic field and
ion beam direction
o Deflection of ion species is
given by the equation
o Magnetic field measured by Semiconductor Hall probe
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BASIC PRINCIPLE
 Bombardment of a sample surface with a primary ion
beam (Ip) followed by mass spectrometry of the emitted
secondary ions (Is) constitutes secondary ion mass
spectrometry.
 SIMS is a surface analysis technique used to
characterize the surface and sub-surface region of
materials
 It has used in two modes Static SIMS mode and
Dynamic SIMS mode

INTRODUCTION
 Mass Spectroscopy
Mass spectrometry (MS) is an analytical technique that measures
mass to charge ratio of charged
particles.
 Secondary ion mass spectrometry
Secondary ion mass spectrometry (SIMS) is based on the
observation of charged particles (Secondary
Ions) are ejected from a sample surface when bombarded by a
primary beam of heavy particles.

OUTLINE
 Introduction
 Basic principle
 Basic overview
 Ion gun
 Energy and Mass Analyzer
 Ion Detectors
 Advantages and limitations
 Applications