the HEMT

A quick introduction to what a high electron mobility transistor is and how it works.

after the creation of 2DEG, how is possible to create a flux of carriers between drain and source?
They need to go out from the high-density layer through the supply layer (AlGaAs for ex.) in order
to reach the two D/S regions?

A few things to consider:

1. The barrier is very thin (talking nanometers).

2. electrons are intrinsically pushed by the electric field generated by the VDS and according to
the "least action" principle, they will follow the shortest path possible to reach the drain electrode
(shortest in this case means easiest, which means less resistive path).

Having a full barrier though, between electrodes and channel, even if does not inhibit the "flow of
electrons" will surely increase the total "Contact resistance" of the HEMT, that is why people try to
recess the barrier and create a sidewall contact between electrodes and channel (annealing
temperature is also another factor that comes into play). By doing that you will have no extra
resistive path between channel and electrode. So, in conclusion I would say that electrons will
indeed fight their way through the barrier to reach the beloved electrode. but their flow (current let
say) will depend also on the resistance of this additive path they have to take

Aluminum Gallium Nitride (AlGaN)

Aluminum Gallium Nitride semiconductor wafers and substrates are available in
numerous diameters and thicknesses and can be grown epitaxially on sapphire or silicon
substrates. Available grades include Prime, Production, Research, and Rider. Common
applications include the fabrication of AlGaN/GaN high electron mobility transistors
(HEMTs), semiconductor lasers, and various types of diodes. American Elements
manufactures materials to many standard grades when applicable including Mil Spec
(military grade), ACS, Reagent and Technical Grades; Food, Agricultural and
Pharmaceutical Grades, Optical, Semiconductor, and Electronics Grades, and follows
applicable USP, EP/BP, and ASTM testing standards. Most materials can be produced in
high and ultra high purity forms (99%, 99.9%, 99.99%, 99.999%, and higher). Standard
and custom packaging is available. Additional technical, research and safety (SDS)
information is available. Please request a quote above to receive pricing information
based on your specifications.

Chemical Identifiers
Linear Formula AlxGa1−xN
Aluminum Gallium Nitride (AlGaN) Properties (Theoretical)
Compound Formula AlGaN

Molecular Weight 110.71

Appearance Solid

Melting Point N/A

Boiling Point N/A

Density N/A

Solubility in H2O N/A

Electrical Resistivity 2.5 Ωmm

Thermal Conductivity 1.3 – 2.1 W/cmK